WO2008114411A1 - 導電性反射防止膜形成用材料、導電性反射防止膜の形成方法、レジストパターン形成方法、半導体装置、及び磁気ヘッド - Google Patents

導電性反射防止膜形成用材料、導電性反射防止膜の形成方法、レジストパターン形成方法、半導体装置、及び磁気ヘッド Download PDF

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Publication number
WO2008114411A1
WO2008114411A1 PCT/JP2007/055665 JP2007055665W WO2008114411A1 WO 2008114411 A1 WO2008114411 A1 WO 2008114411A1 JP 2007055665 W JP2007055665 W JP 2007055665W WO 2008114411 A1 WO2008114411 A1 WO 2008114411A1
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WIPO (PCT)
Prior art keywords
formation
reflection film
conductive anti
resist pattern
semiconductor device
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Application number
PCT/JP2007/055665
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English (en)
French (fr)
Inventor
Junichi Kon
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Fujitsu Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Limited filed Critical Fujitsu Limited
Priority to EP07739108.4A priority Critical patent/EP2138897B1/en
Priority to JP2009505010A priority patent/JP4843710B2/ja
Priority to PCT/JP2007/055665 priority patent/WO2008114411A1/ja
Publication of WO2008114411A1 publication Critical patent/WO2008114411A1/ja
Priority to US12/560,866 priority patent/US8557144B2/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/111—Anti-reflection coatings using layers comprising organic materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D165/00—Coating compositions based on macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Coating compositions based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/24—Electrically-conducting paints
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • G02B1/115—Multilayers
    • G02B1/116—Multilayers including electrically conducting layers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/16—Optical coatings produced by application to, or surface treatment of, optical elements having an anti-static effect, e.g. electrically conducting coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/093—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antistatic means, e.g. for charge depletion
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/32—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
    • C08G2261/322—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed
    • C08G2261/3223—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed containing one or more sulfur atoms as the only heteroatom, e.g. thiophene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/70—Post-treatment
    • C08G2261/76—Post-treatment crosslinking
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
    • C08K5/41—Compounds containing sulfur bound to oxygen
    • C08K5/42—Sulfonic acids; Derivatives thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/2481—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including layer of mechanically interengaged strands, strand-portions or strand-like strips

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Electron Beam Exposure (AREA)
  • Paints Or Removers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

　本発明は、紫外線の反射を抑制するとともに帯電防止効果に優れ、高感度であり、電子線などを露光光とした場合でも、電荷の蓄積を防止して、パターン欠落や位置ずれがなく、高解像度で微細なレジストパターン乃至配線パターン等の形成を低コストで簡便に効率よく形成可能な導電性反射防止膜形成用材料等を提供することを目的とする。本発明の導電性反射防止膜形成用材料は、導電性を有する基材樹脂、架橋剤、熱酸発生剤、及び溶剤を少なくとも含むことを特徴とする。
PCT/JP2007/055665 2007-03-20 2007-03-20 導電性反射防止膜形成用材料、導電性反射防止膜の形成方法、レジストパターン形成方法、半導体装置、及び磁気ヘッド WO2008114411A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP07739108.4A EP2138897B1 (en) 2007-03-20 2007-03-20 Conductive anti-reflection film, method for formation of resist pattern
JP2009505010A JP4843710B2 (ja) 2007-03-20 2007-03-20 導電性反射防止膜形成用材料、導電性反射防止膜の形成方法、レジストパターン形成方法、半導体装置、及び磁気ヘッド
PCT/JP2007/055665 WO2008114411A1 (ja) 2007-03-20 2007-03-20 導電性反射防止膜形成用材料、導電性反射防止膜の形成方法、レジストパターン形成方法、半導体装置、及び磁気ヘッド
US12/560,866 US8557144B2 (en) 2007-03-20 2009-09-16 Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/055665 WO2008114411A1 (ja) 2007-03-20 2007-03-20 導電性反射防止膜形成用材料、導電性反射防止膜の形成方法、レジストパターン形成方法、半導体装置、及び磁気ヘッド

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/560,866 Continuation US8557144B2 (en) 2007-03-20 2009-09-16 Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head

Publications (1)

Publication Number Publication Date
WO2008114411A1 true WO2008114411A1 (ja) 2008-09-25

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PCT/JP2007/055665 WO2008114411A1 (ja) 2007-03-20 2007-03-20 導電性反射防止膜形成用材料、導電性反射防止膜の形成方法、レジストパターン形成方法、半導体装置、及び磁気ヘッド

Country Status (4)

Country Link
US (1) US8557144B2 (ja)
EP (1) EP2138897B1 (ja)
JP (1) JP4843710B2 (ja)
WO (1) WO2008114411A1 (ja)

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KR20100036968A (ko) * 2008-09-30 2010-04-08 나가세케무텍쿠스가부시키가이샤 저온 열경화형 도전성 코팅용 조성물
JP2010134437A (ja) * 2008-10-28 2010-06-17 Shin-Etsu Chemical Co Ltd フォトレジスト下層膜形成材料及びパターン形成方法
WO2014185522A1 (ja) * 2013-05-16 2014-11-20 三菱レイヨン株式会社 導電性組成物、導電体、積層体とその製造方法、導電性フィルム、及び固体電解コンデンサ
JPWO2015174453A1 (ja) * 2014-05-14 2017-04-20 三菱レイヨン株式会社 導電性組成物、帯電防止膜、積層体とその製造方法、およびフォトマスクの製造方法
US11145432B2 (en) 2012-07-24 2021-10-12 Mitsubishi Chemical Corporation Conductor, conductive composition and laminate

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US20170069480A9 (en) * 2009-10-14 2017-03-09 Sun Chemical Corporation Method of cleaning and micro-etching semiconductor wafers
US8440012B2 (en) * 2010-10-13 2013-05-14 Rf Micro Devices, Inc. Atomic layer deposition encapsulation for acoustic wave devices
WO2016035785A1 (ja) * 2014-09-02 2016-03-10 学校法人東京理科大学 導電膜および導電パターンの製造方法
CN111512228A (zh) * 2017-12-28 2020-08-07 默克专利有限公司 包含碱溶性树脂和交联剂的负型剥离抗蚀剂组合物以及在衬底上制造金属膜图案的方法
US11567408B2 (en) * 2019-10-15 2023-01-31 Rohm And Haas Electronic Materials Korea Ltd. Coating composition for use with an overcoated photoresist

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See also references of EP2138897A4

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100036968A (ko) * 2008-09-30 2010-04-08 나가세케무텍쿠스가부시키가이샤 저온 열경화형 도전성 코팅용 조성물
JP2010106245A (ja) * 2008-09-30 2010-05-13 Nagase Chemtex Corp 低温熱硬化型導電性コーティング用組成物
KR101650572B1 (ko) 2008-09-30 2016-08-23 나가세케무텍쿠스가부시키가이샤 저온 열경화형 도전성 코팅용 조성물
JP2010134437A (ja) * 2008-10-28 2010-06-17 Shin-Etsu Chemical Co Ltd フォトレジスト下層膜形成材料及びパターン形成方法
US11145432B2 (en) 2012-07-24 2021-10-12 Mitsubishi Chemical Corporation Conductor, conductive composition and laminate
WO2014185522A1 (ja) * 2013-05-16 2014-11-20 三菱レイヨン株式会社 導電性組成物、導電体、積層体とその製造方法、導電性フィルム、及び固体電解コンデンサ
JPWO2014185522A1 (ja) * 2013-05-16 2017-02-23 三菱レイヨン株式会社 導電性組成物、導電体、積層体とその製造方法、導電性フィルム、及び固体電解コンデンサ
US10049780B2 (en) 2013-05-16 2018-08-14 Mitsubishi Chemical Corporation Electroconductive composition, electrical conductor, laminate and method for producing same, electroconductive film, and solid electrolyte condenser
JPWO2015174453A1 (ja) * 2014-05-14 2017-04-20 三菱レイヨン株式会社 導電性組成物、帯電防止膜、積層体とその製造方法、およびフォトマスクの製造方法
US10488757B2 (en) 2014-05-14 2019-11-26 Mitsubishi Chemical Corporation Conductive composition, antistatic film, laminate and production therefor, and production method for photomask

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