WO2015037478A1 - Substrat de support en verre et élément de transport l'utilisant - Google Patents

Substrat de support en verre et élément de transport l'utilisant Download PDF

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Publication number
WO2015037478A1
WO2015037478A1 PCT/JP2014/073085 JP2014073085W WO2015037478A1 WO 2015037478 A1 WO2015037478 A1 WO 2015037478A1 JP 2014073085 W JP2014073085 W JP 2014073085W WO 2015037478 A1 WO2015037478 A1 WO 2015037478A1
Authority
WO
WIPO (PCT)
Prior art keywords
glass substrate
substrate
supporting glass
supporting
less
Prior art date
Application number
PCT/JP2014/073085
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English (en)
Japanese (ja)
Inventor
三和　晋吉
光 池田
Original Assignee
日本電気硝子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気硝子株式会社 filed Critical 日本電気硝子株式会社
Priority to CN201480031817.3A priority Critical patent/CN105307993A/zh
Priority to KR1020157032898A priority patent/KR102200850B1/ko
Publication of WO2015037478A1 publication Critical patent/WO2015037478A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping

Abstract

　Substrat de support en verre servant à supporter un substrat à traiter, ledit substrat de support en verre ne provoquant pas facilement une variation dimensionnelle du substrat à traiter et étant caractérisé par le fait qu'il possède un coefficient de dilatation thermique linéaire moyen de 50 × 10－7/˚C à 66×10－7/˚C dans une plage de températures de 20 à 200° C
PCT/JP2014/073085 2013-09-12 2014-09-02 Substrat de support en verre et élément de transport l'utilisant WO2015037478A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201480031817.3A CN105307993A (zh) 2013-09-12 2014-09-02 支承玻璃基板及使用其的搬送体
KR1020157032898A KR102200850B1 (ko) 2013-09-12 2014-09-02 지지 유리 기판 및 이것을 사용한 반송체

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-189065 2013-09-12
JP2013189065 2013-09-12

Publications (1)

Publication Number Publication Date
WO2015037478A1 true WO2015037478A1 (fr) 2015-03-19

Family

ID=52665587

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2014/073085 WO2015037478A1 (fr) 2013-09-12 2014-09-02 Substrat de support en verre et élément de transport l'utilisant

Country Status (5)

Country Link
JP (1) JP6593669B2 (fr)
KR (1) KR102200850B1 (fr)
CN (2) CN112159100A (fr)
TW (1) TWI644881B (fr)
WO (1) WO2015037478A1 (fr)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015156075A1 (fr) * 2014-04-07 2015-10-15 日本電気硝子株式会社 Substrat de support en verre et élément multicouche l'utilisant
WO2016035674A1 (fr) * 2014-09-03 2016-03-10 日本電気硝子株式会社 Substrat de support en verre et stratifié l'utilisant
WO2016111158A1 (fr) * 2015-01-05 2016-07-14 日本電気硝子株式会社 Plaque en verre et son procédé de fabrication
WO2016111152A1 (fr) * 2015-01-05 2016-07-14 日本電気硝子株式会社 Substrat de soutien en verre et son procédé de fabrication
WO2016143583A1 (fr) * 2015-03-10 2016-09-15 日本電気硝子株式会社 Substrat en verre supportant un semi-conducteur et substrat stratifié l'utilisant
WO2016190303A1 (fr) * 2015-05-28 2016-12-01 旭硝子株式会社 Substrat de verre et substrat stratifié
WO2017018275A1 (fr) * 2015-07-24 2017-02-02 旭硝子株式会社 Substrat de verre, substrat stratifié, procédé de fabrication de substrat stratifié, stratifié, emballage et procédé de fabrication de substrat de verre
WO2017057446A1 (fr) * 2015-10-02 2017-04-06 旭硝子株式会社 Substrat de verre, substrat stratifié et stratifié
WO2017104513A1 (fr) * 2015-12-17 2017-06-22 日本電気硝子株式会社 Procédé de fabrication de substrat de support en verre
WO2017104514A1 (fr) * 2015-12-16 2017-06-22 日本電気硝子株式会社 Substrat de support en vitrocéramique, et stratifié mettant en œuvre celui-ci
TWI631688B (zh) * 2015-06-16 2018-08-01 勤友光電股份有限公司 用於雷射剝離處理之晶圓結構
KR20180098556A (ko) 2015-12-28 2018-09-04 에이지씨 가부시키가이샤 유리 기판, 적층 기판, 적층체, 및 반도체 패키지의 제조 방법

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JP6119567B2 (ja) * 2013-11-11 2017-04-26 旭硝子株式会社 ガラス積層体の製造方法および電子デバイスの製造方法
KR20190054068A (ko) 2016-09-16 2019-05-21 에이지씨 가부시키가이샤 유리 기판 및 적층 기판
DE102018209589B4 (de) * 2017-06-22 2023-05-04 Schott Ag Verbund aus einem Bauteil, insbesondere einem elektronischen Bauteil, und einem Glas- oder Glaskeramikmaterial sowie Verfahren zu dessen Herstellung

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JPH0230640A (ja) * 1988-07-19 1990-02-01 Nippon Electric Glass Co Ltd ファイバープレート用芯ガラス
JPH03237036A (ja) * 1989-08-24 1991-10-22 Nippon Electric Glass Co Ltd アルミナパッケージ用薄板状硼けい酸ガラス
JP2006137631A (ja) * 2004-11-11 2006-06-01 Nippon Electric Glass Co Ltd ガラス基板及びその製造方法
JP2011136895A (ja) * 2009-12-04 2011-07-14 Nippon Electric Glass Co Ltd 合わせガラス
JP2012015216A (ja) * 2010-06-29 2012-01-19 Fujitsu Ltd 半導体装置の製造方法

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JP5348598B2 (ja) * 2005-05-10 2013-11-20 日本電気硝子株式会社 半導体素子用ガラス基板およびそれを用いたチップスケールパッケージ
JP2007311492A (ja) * 2006-05-17 2007-11-29 Shinko Electric Ind Co Ltd 半導体装置の製造方法
US20080191334A1 (en) * 2007-02-12 2008-08-14 Visera Technologies Company Limited Glass dam structures for imaging devices chip scale package
JP2009016771A (ja) * 2007-06-08 2009-01-22 Ｈｏｙａ Ｃａｎｄｅｏ Ｏｐｔｒｏｎｉｃｓ株式会社 ウエハ支持ガラス
JP5334411B2 (ja) * 2007-12-30 2013-11-06 株式会社フジクラ 貼り合わせ基板および貼り合せ基板を用いた半導体装置の製造方法
JP5091696B2 (ja) * 2008-01-26 2012-12-05 株式会社フジクラ 半導体パッケージの製造方法
JP5496692B2 (ja) * 2010-01-22 2014-05-21 三洋電機株式会社 半導体モジュールの製造方法
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JPH0230640A (ja) * 1988-07-19 1990-02-01 Nippon Electric Glass Co Ltd ファイバープレート用芯ガラス
JPH03237036A (ja) * 1989-08-24 1991-10-22 Nippon Electric Glass Co Ltd アルミナパッケージ用薄板状硼けい酸ガラス
JP2006137631A (ja) * 2004-11-11 2006-06-01 Nippon Electric Glass Co Ltd ガラス基板及びその製造方法
JP2011136895A (ja) * 2009-12-04 2011-07-14 Nippon Electric Glass Co Ltd 合わせガラス
JP2012015216A (ja) * 2010-06-29 2012-01-19 Fujitsu Ltd 半導体装置の製造方法

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WO2015156075A1 (fr) * 2014-04-07 2015-10-15 日本電気硝子株式会社 Substrat de support en verre et élément multicouche l'utilisant
WO2016035674A1 (fr) * 2014-09-03 2016-03-10 日本電気硝子株式会社 Substrat de support en verre et stratifié l'utilisant
WO2016111158A1 (fr) * 2015-01-05 2016-07-14 日本電気硝子株式会社 Plaque en verre et son procédé de fabrication
WO2016111152A1 (fr) * 2015-01-05 2016-07-14 日本電気硝子株式会社 Substrat de soutien en verre et son procédé de fabrication
US10737965B2 (en) 2015-01-05 2020-08-11 Nippon Electric Glass Co., Ltd. Method of manufacturing glass sheet
JPWO2016143583A1 (ja) * 2015-03-10 2018-02-22 日本電気硝子株式会社 半導体用支持ガラス基板及びこれを用いた積層基板
WO2016143583A1 (fr) * 2015-03-10 2016-09-15 日本電気硝子株式会社 Substrat en verre supportant un semi-conducteur et substrat stratifié l'utilisant
KR20180013914A (ko) 2015-05-28 2018-02-07 아사히 가라스 가부시키가이샤 유리 기판 및 적층 기판
US11715673B2 (en) 2015-05-28 2023-08-01 AGC Inc. Glass substrate and laminated substrate
KR20230044547A (ko) 2015-05-28 2023-04-04 에이지씨 가부시키가이샤 유리 기판 및 적층 기판
US10515864B2 (en) 2015-05-28 2019-12-24 AGC Inc. Glass substrate and laminated substrate
KR102651767B1 (ko) 2015-05-28 2024-03-28 에이지씨 가부시키가이샤 유리 기판 및 적층 기판
JPWO2016190303A1 (ja) * 2015-05-28 2018-03-15 旭硝子株式会社 ガラス基板、および積層基板
WO2016190303A1 (fr) * 2015-05-28 2016-12-01 旭硝子株式会社 Substrat de verre et substrat stratifié
US11114356B2 (en) 2015-05-28 2021-09-07 AGC Inc. Glass substrate and laminated substrate
KR102515348B1 (ko) 2015-05-28 2023-03-30 에이지씨 가부시키가이샤 유리 기판 및 적층 기판
TWI631688B (zh) * 2015-06-16 2018-08-01 勤友光電股份有限公司 用於雷射剝離處理之晶圓結構
WO2017018275A1 (fr) * 2015-07-24 2017-02-02 旭硝子株式会社 Substrat de verre, substrat stratifié, procédé de fabrication de substrat stratifié, stratifié, emballage et procédé de fabrication de substrat de verre
US11133215B2 (en) 2015-07-24 2021-09-28 AGC Inc. Glass substrate, laminated substrate, laminated substrate manufacturing method, laminate, package, and glass substrate manufacturing method
JPWO2017018275A1 (ja) * 2015-07-24 2018-06-21 旭硝子株式会社 ガラス基板、積層基板、積層基板の製造方法、積層体、梱包体、およびガラス基板の製造方法
CN113307471A (zh) * 2015-07-24 2021-08-27 Ａｇｃ株式会社 玻璃基板、捆包体以及玻璃基板的制造方法
CN107848878B (zh) * 2015-07-24 2021-06-29 Ａｇｃ株式会社 玻璃基板、层叠基板、层叠基板的制造方法、层叠体、捆包体以及玻璃基板的制造方法
CN107848878A (zh) * 2015-07-24 2018-03-27 旭硝子株式会社 玻璃基板、层叠基板、层叠基板的制造方法、层叠体、捆包体以及玻璃基板的制造方法
US11180407B2 (en) 2015-10-02 2021-11-23 AGC Inc. Glass substrate, laminated substrate, and laminate
JPWO2017057446A1 (ja) * 2015-10-02 2018-07-19 旭硝子株式会社 ガラス基板、積層基板、および積層体
WO2017057446A1 (fr) * 2015-10-02 2017-04-06 旭硝子株式会社 Substrat de verre, substrat stratifié et stratifié
US11753330B2 (en) 2015-10-02 2023-09-12 AGC Inc. Glass substrate, laminated substrate, and laminate
KR20180095512A (ko) * 2015-12-16 2018-08-27 니폰 덴키 가라스 가부시키가이샤 지지 결정화 유리 기판 및 이것을 사용한 적층체
CN108290774A (zh) * 2015-12-16 2018-07-17 日本电气硝子株式会社 支承结晶化玻璃基板和使用了其的层叠体
WO2017104514A1 (fr) * 2015-12-16 2017-06-22 日本電気硝子株式会社 Substrat de support en vitrocéramique, et stratifié mettant en œuvre celui-ci
JPWO2017104514A1 (ja) * 2015-12-16 2018-10-04 日本電気硝子株式会社 支持結晶化ガラス基板及びこれを用いた積層体
KR102584795B1 (ko) 2015-12-16 2023-10-05 니폰 덴키 가라스 가부시키가이샤 지지 결정화 유리 기판 및 이것을 사용한 적층체
JPWO2017104513A1 (ja) * 2015-12-17 2018-10-04 日本電気硝子株式会社 支持ガラス基板の製造方法
KR20180095513A (ko) * 2015-12-17 2018-08-27 니폰 덴키 가라스 가부시키가이샤 지지 유리 기판의 제조 방법
JP2022025147A (ja) * 2015-12-17 2022-02-09 日本電気硝子株式会社 支持ガラス基板の製造方法
JP7268718B2 (ja) 2015-12-17 2023-05-08 日本電気硝子株式会社 支持ガラス基板の製造方法
WO2017104513A1 (fr) * 2015-12-17 2017-06-22 日本電気硝子株式会社 Procédé de fabrication de substrat de support en verre
KR102588111B1 (ko) 2015-12-17 2023-10-12 니폰 덴키 가라스 가부시키가이샤 지지 유리 기판의 제조 방법
KR20180098556A (ko) 2015-12-28 2018-09-04 에이지씨 가부시키가이샤 유리 기판, 적층 기판, 적층체, 및 반도체 패키지의 제조 방법
US10882778B2 (en) 2015-12-28 2021-01-05 AGC Inc. Glass substrate, laminated substrate, laminate, and method for producing semiconductor package

Also Published As

Publication number Publication date
CN105307993A (zh) 2016-02-03
TWI644881B (zh) 2018-12-21
TW201522269A (zh) 2015-06-16
KR20160055104A (ko) 2016-05-17
CN112159100A (zh) 2021-01-01
KR102200850B1 (ko) 2021-01-11
JP2015078113A (ja) 2015-04-23
JP6593669B2 (ja) 2019-10-23

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