JPWO2016190303A1 - ガラス基板、および積層基板 - Google Patents
ガラス基板、および積層基板 Download PDFInfo
- Publication number
- JPWO2016190303A1 JPWO2016190303A1 JP2017520713A JP2017520713A JPWO2016190303A1 JP WO2016190303 A1 JPWO2016190303 A1 JP WO2016190303A1 JP 2017520713 A JP2017520713 A JP 2017520713A JP 2017520713 A JP2017520713 A JP 2017520713A JP WO2016190303 A1 JPWO2016190303 A1 JP WO2016190303A1
- Authority
- JP
- Japan
- Prior art keywords
- glass substrate
- substrate
- glass
- less
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- 238000000034 method Methods 0.000 description 37
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Images
Classifications
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
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- General Physics & Mathematics (AREA)
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Abstract
Description
そこで、本発明は、ガラス基板とシリコンを含む基板とを貼り合わせる工程において、泡が入りにくいガラス基板を提供する。
また、本発明の積層基板は、上記ガラス基板とシリコンを含む基板とが積層されて形成されることを特徴とする。
なお、本明細書において、特に明記しない限りは、ガラス基板およびその製造方法における各成分の含有量は酸化物基準のモル百分率で表す。
図1(A)及び(B)は、シリコンを含む基板と貼り合わせる、本発明の一実施形態に係るガラス基板の断面図である。図1(A)に表されるガラス基板G1は、シリコンを含む基板10と、樹脂20を間に介して、例えば、雰囲気200℃〜400℃の温度で貼り合わされ、図1(B)に表される積層基板30が得られる。シリコンを含む基板10として、例えば、ウェハ(例えばシリコンウェハ)、素子が形成されたウェハ、ウェハから素子が切り出されたチップが樹脂にモールドされた基板などが用いられる。樹脂20は、例えば、200〜400℃の温度に耐えられるものである。
反転前後における各測定点の高さの平均を求めることで自重による影響がキャンセルされる。例えば、反転前に、上述のとおり、主表面G1Fの高さを測定する。ガラス基板G1を反転後、主表面G1Fの測定点に対応する位置で、主表面G1Gの高さを測定する。同様に、反転前に、主表面G1Gの高さを測定する。ガラス基板G1を反転後、主表面G1Gの測定点に対応する位置で、主表面G1Fの高さを測定する。
反りは、例えば、レーザ変位計により測定される。
SiO2 :50〜75%、
Al2O3 :0〜16%、
B2O3 :0〜15%、
MgO :0〜18%、
CaO :0〜13%、
SrO :0〜11%、
BaO :0〜15%、
Na2O :0〜17%、
K2O :0〜15%
本発明の一実施形態のガラス基板は、耐候性、溶解性、失透性、紫外線遮蔽、赤外線遮蔽、紫外線透過、赤外線透過等の改善のために、ZnO、Li2O、WO3、Nb2O5、V2O5、Bi2O3、MoO3、P2O5、Ga2O3、I2O5、In2O5、Ge2O5等を含有させてもよい。
ここで、β−OHは、以下の式により求められた値である。
β−OH(mm−1)=−log10(T3500cm−1/T4000cm−1)/t
本発明の一実施形態のガラス基板を製造する場合、溶解、清澄、成形、および徐冷工程を経る。
本発明は上記実施形態に限定されない。本発明の目的を達成できる範囲での変形や改良等は本発明に含まれる。
例1〜18は実施例であり、例19〜21は比較例である。表1、2に示すガラス組成(目標組成)となるように珪砂等の各種のガラス原料を調合し、目標組成の原料100%に対し、酸化物基準の質量百分率表示で、硫酸塩をSO3換算で0.01〜1%、Fを0.16%、Clを1%添加し、白金坩堝を用いて1550〜1650℃の温度で3時間加熱し溶融した。溶融にあたっては、白金スターラーを挿入し1時間攪拌しガラスの均質化を行った。次いで溶融ガラスをカーボン板状に流し出して板状に成形した後、板状のガラスをTg+50℃程度の温度の電気炉に入れ、冷却速度R(℃/分)で電気炉を降温させ、ガラスが室温になるまで冷却した。
JIS R3102(1995年)に規定されている方法に従い、示差熱膨張計(TMA)を用いて50〜350℃の平均熱膨張係数を測定した。
(ガラス転移点Tg)
JIS R3103−3(2001年)に規定されている方法に従い、TMAを用いて測定した。
(密度)
泡を含まない約20gのガラス塊をアルキメデス法によって測定した。
(ヤング率)
厚さ0.5〜10mmのガラスについて、超音波パルス法により測定した。
(T2)
回転粘度計を用いて粘度を測定し、102dPa・sとなるときの温度T2(℃)を測定した。
(T4)
回転粘度計を用いて粘度を測定し、104dPa・sとなるときの温度T4(℃)を測定した。
(失透温度)
ガラスの失透温度は、白金製皿に粉砕されたガラス粒子を入れ、一定温度に制御された電気炉中で17時間熱処理を行い、熱処理後の光学顕微鏡観察によって、ガラスの内部に結晶が析出する最高温度と結晶が析出しない最低温度との平均値である。
(透過率)
得られたガラスを厚さ1mmに鏡面研磨し、波長300nmにおける透過率を分光光度計により測定した。
例19〜20のガラス基板にあっては、成形工程および徐冷工程において、ガラスリボン進行方向に交わるガラスリボン幅方向のガラスリボン中央部の温度とガラスリボン端部の温度との差を例1〜18のガラス基板を作製するときよりも小さくした。
例21のガラス基板にあっては、成形工程および徐冷工程において、ガラスリボン進行方向に交わるガラスリボン幅方向のガラスリボン中央部の温度とガラスリボン端部の温度との差を例1〜18のガラス基板を作製するときよりも大きくした。
得られたガラス基板の厚さT(単位:mm)、直径D(単位:インチ)、一の主表面の面積(単位:cm2)、板厚偏差(単位:μm)、反り(単位:μm)、たわみ量S(単位:μm)を測定し、表1、2に示した。また、反りによる傾斜角度を求め、該傾斜角度が0.0004〜0.12°の範囲内にあるかを示した。なお、表中のかっこ書きした値は、計算により求めたものである。以下に各物性の測定方法を示す。
ガラス基板の板厚を分光干渉レーザ変位計(キーエンス製)により測定した。
ガラス基板の直径をノギスにより測定した。
ガラス基板の一の主表面を非接触レーザ変位計(黒田精工製ナノメトロ)により1mm間隔で測定し、面積を算出した。
ガラス基板の板厚を非接触レーザ変位計(黒田精工製ナノメトロ)により3mm間隔で測定し、板厚偏差を算出した。
(反り)
ガラス基板の2つの主表面の高さを非接触レーザ変位計(黒田精工製ナノメトロ)により3mm間隔で測定し、上記図2を用いて説明した方法により反りを算出した。
(たわみ量)
非接触レーザ変位計(黒田精工製ナノメトロ)により上記図4を用いて説明した方法によりたわみ量を測定した。
(反りによる傾斜角度)
ガラス基板の2つの主表面の高さを非接触レーザ変位計(黒田精工製ナノメトロ)により3mm間隔で測定し、上記図3を用いて説明した方法により傾斜角度を算出した。
20 樹脂
30 積層基板
G1 ガラス基板
Claims (14)
- シリコンを含む基板と積層されることにより積層基板が形成されるガラス基板であって、前記ガラス基板の反りが2〜300μmであり、前記反りによる傾斜角度が0.0004〜0.12°であるガラス基板。
- 前記ガラス基板の一の主表面の面積が70〜2000cm2である請求項1に記載のガラス基板。
- 前記ガラス基板の形状が円形である請求項1または2に記載のガラス基板。
- 前記ガラス基板のヤング率が65GPa以上である請求項1〜3のいずれか1項に記載のガラス基板。
- 前記ガラス基板の一の主表面に直交し、前記一の主表面の重心を通る断面の形状が凹形であり、前記一の主表面の重心を通り前記断面と前記一の主表面とに直交する断面が凸形である請求項1〜4のいずれか1項に記載のガラス基板。
- 前記ガラス基板の一の主表面に直交し、前記一の主表面の重心を通る断面の形状が凹形であり、前記一の主表面の重心を通り前記断面と前記一の主表面とに直交する断面が凹形である請求項5に記載のガラス基板。
- 前記ガラス基板が、酸化物基準のモル百分率表示で
SiO2 :50〜75%、
Al2O3 :0〜16%、
B2O3 :0〜15%、
MgO :0〜18%、
CaO :0〜13%、
SrO :0〜11%、
BaO :0〜15%、
Na2O :0〜17%、
K2O :0〜15%
を含む請求項1〜6のいずれか1項に記載のガラス基板。 - 前記ガラス基板のβ−OHが0.05〜0.65mm−1である請求項1〜7のいずれか1項に記載のガラス基板。
- 前記ガラス基板の板厚偏差が1〜15μmである請求項1〜8のいずれか1項に記載のガラス基板。
- 前記ガラス基板の50℃〜350℃での平均熱膨張係数が30〜120(×10−7/℃)である請求項1〜9のいずれか1項に記載のガラス基板。
- 前記ガラス基板の主表面に遮光膜が形成される請求項1〜10のいずれか1項に記載のガラス基板。
- 請求項1〜11のいずれか1項に記載のガラス基板とシリコンを含む基板とが積層された積層基板。
- 前記ガラス基板が2枚以上積層された請求項12に記載の積層基板。
- 前記積層基板において、前記ガラス基板の反りが200μm以下である請求項12または13に記載の積層基板。
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TW202142516A (zh) | 2021-11-16 |
KR102651767B1 (ko) | 2024-03-28 |
JP6601493B2 (ja) | 2019-11-06 |
US11114356B2 (en) | 2021-09-07 |
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