JP6892000B2 - 支持ガラス基板及びこれを用いた積層体 - Google Patents
支持ガラス基板及びこれを用いた積層体 Download PDFInfo
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- JP6892000B2 JP6892000B2 JP2020084509A JP2020084509A JP6892000B2 JP 6892000 B2 JP6892000 B2 JP 6892000B2 JP 2020084509 A JP2020084509 A JP 2020084509A JP 2020084509 A JP2020084509 A JP 2020084509A JP 6892000 B2 JP6892000 B2 JP 6892000B2
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B17/00—Forming molten glass by flowing-out, pushing-out, extruding or drawing downwardly or laterally from forming slits or by overflowing over lips
- C03B17/06—Forming glass sheets
- C03B17/064—Forming glass sheets by the overflow downdraw fusion process; Isopipes therefor
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
- C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
- C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Glass Compositions (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
10、26 支持ガラス基板
11、24 加工基板
12 剥離層
13、21、25 接着層
20 支持部材
22 半導体チップ
23 封止材
28 配線
29 半田バンプ
Claims (10)
- 20〜200℃の温度範囲における平均線熱膨張係数が81×10−7/℃超であり、且つ110×10−7/℃以下であり、ガラス組成として、質量%で、SiO 2 55〜80%、B 2 O 3 0〜8%、Na 2 O+K 2 O 12〜35%を含有し、表面に圧縮応力層を有さず、半導体チップが樹脂でモールドされた加工基板の支持に用いることを特徴とする支持ガラス基板。
- 30〜380℃の温度範囲における平均線熱膨張係数が85×10−7/℃超であり、且つ115×10−7/℃以下であり、ガラス組成として、質量%で、SiO 2 55〜80%、B 2 O 3 0〜8%、Na 2 O+K 2 O 12〜35%を含有し、表面に圧縮応力層を有さず、半導体チップが樹脂でモールドされた加工基板の支持に用いることを特徴とする支持ガラス基板。
- ヤング率が65GPa以上であることを特徴とする請求項1又は2に記載の支持ガラス基板。
- ガラス組成として、質量%で、SiO2 55〜80%、Al2O3 1〜20%、B2O3 0〜8%、MgO 0〜10%、CaO 0〜10%、SrO 0〜7%、BaO 0〜7%、ZnO 0〜7%、Na2O 0〜25%、K2O 0〜25%を含有することを特徴とする請求項1〜3のいずれかに記載の支持ガラス基板。
- ガラス組成として、質量%で、SiO2 55〜70%、Al2O3 3〜18%、B2O3 0〜8%、MgO 0〜5%、CaO 0〜10%、SrO 0〜5%、BaO 0〜5%、ZnO 0〜5%、Na2O 2〜23%、K2O 0〜20%を含有することを特徴とする請求項4に記載の支持ガラス基板。
- 板厚が2.0mm未満であり、板厚偏差が30μm以下であり、且つ反り量が60μm以下であることを特徴とする請求項1〜5の何れかに記載の支持ガラス基板。
- 少なくとも加工基板と加工基板を支持するための支持ガラス基板とを備える積層体であって、支持ガラス基板が請求項1〜6の何れかに記載の支持ガラス基板であり、加工基板が、少なくとも封止材でモールドされた半導体チップを備えることを特徴とする積層体。
- 少なくとも加工基板と加工基板を支持するための支持ガラス基板とを備える積層体を用意する工程と、
積層体を搬送する工程と、
加工基板に対して、加工処理を行う工程と、を有すると共に、
支持ガラス基板が請求項1〜6の何れかに記載の支持ガラス基板であり、加工基板が、少なくとも封止材でモールドされた半導体チップを備えることを特徴とする半導体パッケージの製造方法。 - 加工処理が、加工基板の一方の表面に配線する工程を含むことを特徴とする請求項8に記載の半導体パッケージの製造方法。
- 加工処理が、加工基板の一方の表面に半田バンプを形成する工程を含むことを特徴とする請求項8又は9に記載の半導体パッケージの製造方法。
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014178807 | 2014-09-03 | ||
JP2014178807 | 2014-09-03 | ||
JP2014210437 | 2014-10-15 | ||
JP2014210437 | 2014-10-15 | ||
JP2015031495 | 2015-02-20 | ||
JP2015031495 | 2015-02-20 | ||
JP2015083852 | 2015-04-16 | ||
JP2015083852 | 2015-04-16 | ||
JP2016546598A JP6741214B2 (ja) | 2014-09-03 | 2015-08-27 | 支持ガラス基板及びこれを用いた積層体 |
Related Parent Applications (1)
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JP2016546598A Division JP6741214B2 (ja) | 2014-09-03 | 2015-08-27 | 支持ガラス基板及びこれを用いた積層体 |
Publications (2)
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JP2020128338A JP2020128338A (ja) | 2020-08-27 |
JP6892000B2 true JP6892000B2 (ja) | 2021-06-18 |
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JP2016546598A Active JP6741214B2 (ja) | 2014-09-03 | 2015-08-27 | 支持ガラス基板及びこれを用いた積層体 |
JP2020084508A Active JP6963219B2 (ja) | 2014-09-03 | 2020-05-13 | 支持ガラス基板及びこれを用いた積層体 |
JP2020084509A Active JP6892000B2 (ja) | 2014-09-03 | 2020-05-13 | 支持ガラス基板及びこれを用いた積層体 |
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JP2016546598A Active JP6741214B2 (ja) | 2014-09-03 | 2015-08-27 | 支持ガラス基板及びこれを用いた積層体 |
JP2020084508A Active JP6963219B2 (ja) | 2014-09-03 | 2020-05-13 | 支持ガラス基板及びこれを用いた積層体 |
Country Status (5)
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JP (3) | JP6741214B2 (ja) |
KR (1) | KR102402822B1 (ja) |
CN (2) | CN115108719A (ja) |
TW (1) | TWI671271B (ja) |
WO (1) | WO2016035674A1 (ja) |
Families Citing this family (10)
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WO2018110163A1 (ja) * | 2016-12-14 | 2018-06-21 | 日本電気硝子株式会社 | 支持ガラス基板及びこれを用いた積層体 |
JP7011215B2 (ja) * | 2016-12-14 | 2022-02-10 | 日本電気硝子株式会社 | 支持ガラス基板及びこれを用いた積層体 |
CN116462405A (zh) * | 2017-07-26 | 2023-07-21 | 日本电气硝子株式会社 | 支承玻璃基板和使用了其的层叠基板 |
WO2019021911A1 (ja) * | 2017-07-26 | 2019-01-31 | Agc株式会社 | 半導体パッケージ用支持ガラス |
JP7280546B2 (ja) * | 2017-11-09 | 2023-05-24 | 日本電気硝子株式会社 | ガラス板及びこれを用いた波長変換パッケージ |
KR20200123130A (ko) * | 2018-02-20 | 2020-10-28 | 니폰 덴키 가라스 가부시키가이샤 | 유리 |
JP7445186B2 (ja) * | 2018-12-07 | 2024-03-07 | 日本電気硝子株式会社 | ガラス |
CN111056752B (zh) * | 2019-12-18 | 2023-12-22 | 东旭集团有限公司 | 显示面板用的玻璃基板组件和玻璃基板组件的制备方法 |
US20240228362A9 (en) * | 2021-02-05 | 2024-07-11 | Nippon Sheet Glass Company, Limited | Glass composition, glass filler, and method for manufacturing the same |
WO2023032163A1 (ja) * | 2021-09-03 | 2023-03-09 | 株式会社レゾナック | 半導体装置を製造する方法、仮固定材、及び、仮固定材の半導体装置を製造するための応用 |
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JP4151161B2 (ja) * | 1998-08-11 | 2008-09-17 | 旭硝子株式会社 | 基板用ガラス |
JP2002025040A (ja) * | 2000-06-30 | 2002-01-25 | Hitachi Ltd | 磁気ディスク用ガラス基板及びそれを用いた磁気ディスク |
JP4692915B2 (ja) * | 2002-05-29 | 2011-06-01 | 日本電気硝子株式会社 | プラズマディスプレイ装置用前面ガラス基板。 |
JP2004067460A (ja) * | 2002-08-07 | 2004-03-04 | Central Glass Co Ltd | ガラス組成物 |
JP5140014B2 (ja) * | 2009-02-03 | 2013-02-06 | 富士通株式会社 | 半導体装置の製造方法 |
JP5402184B2 (ja) * | 2009-04-13 | 2014-01-29 | 日本電気硝子株式会社 | ガラスフィルムおよびその製造方法 |
JP5483262B2 (ja) * | 2009-12-04 | 2014-05-07 | 日本電気硝子株式会社 | 合わせガラス |
JP5507240B2 (ja) * | 2009-12-28 | 2014-05-28 | 株式会社小糸製作所 | 車両用灯具 |
JP5573422B2 (ja) * | 2010-06-29 | 2014-08-20 | 富士通株式会社 | 半導体装置の製造方法 |
JPWO2013118897A1 (ja) * | 2012-02-09 | 2015-05-11 | 旭硝子株式会社 | 透明導電膜形成用ガラス基板、および透明導電膜付き基板 |
JP5796905B2 (ja) * | 2012-12-25 | 2015-10-21 | 日本電気硝子株式会社 | 強化ガラス基板及びガラス並びに強化ガラス基板の製造方法 |
JP6593669B2 (ja) * | 2013-09-12 | 2019-10-23 | 日本電気硝子株式会社 | 支持ガラス基板及びこれを用いた搬送体 |
KR102436789B1 (ko) * | 2014-04-07 | 2022-08-26 | 니폰 덴키 가라스 가부시키가이샤 | 적층체, 반도체 패키지 제조 방법, 반도체 패키지 및 전자기기 |
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2015
- 2015-08-27 WO PCT/JP2015/074269 patent/WO2016035674A1/ja active Application Filing
- 2015-08-27 CN CN202210859949.1A patent/CN115108719A/zh active Pending
- 2015-08-27 KR KR1020177001285A patent/KR102402822B1/ko active IP Right Grant
- 2015-08-27 CN CN201580038593.3A patent/CN106660855A/zh active Pending
- 2015-08-27 JP JP2016546598A patent/JP6741214B2/ja active Active
- 2015-08-28 TW TW104128245A patent/TWI671271B/zh active
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2020
- 2020-05-13 JP JP2020084508A patent/JP6963219B2/ja active Active
- 2020-05-13 JP JP2020084509A patent/JP6892000B2/ja active Active
Also Published As
Publication number | Publication date |
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WO2016035674A1 (ja) | 2016-03-10 |
KR20170048315A (ko) | 2017-05-08 |
CN115108719A (zh) | 2022-09-27 |
JP2020128338A (ja) | 2020-08-27 |
JP2020128337A (ja) | 2020-08-27 |
TWI671271B (zh) | 2019-09-11 |
JPWO2016035674A1 (ja) | 2017-06-15 |
JP6741214B2 (ja) | 2020-08-19 |
CN106660855A (zh) | 2017-05-10 |
KR102402822B1 (ko) | 2022-05-27 |
TW201620849A (zh) | 2016-06-16 |
JP6963219B2 (ja) | 2021-11-05 |
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