WO2016035674A1 - 支持ガラス基板及びこれを用いた積層体 - Google Patents
支持ガラス基板及びこれを用いた積層体 Download PDFInfo
- Publication number
- WO2016035674A1 WO2016035674A1 PCT/JP2015/074269 JP2015074269W WO2016035674A1 WO 2016035674 A1 WO2016035674 A1 WO 2016035674A1 JP 2015074269 W JP2015074269 W JP 2015074269W WO 2016035674 A1 WO2016035674 A1 WO 2016035674A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- glass substrate
- supporting glass
- substrate
- supporting
- less
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B17/00—Forming molten glass by flowing-out, pushing-out, extruding or drawing downwardly or laterally from forming slits or by overflowing over lips
- C03B17/06—Forming glass sheets
- C03B17/064—Forming glass sheets by the overflow downdraw fusion process; Isopipes therefor
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
- C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
- C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
Definitions
- the present invention relates to a supporting glass substrate and a laminate using the same, and more specifically to a supporting glass substrate used for supporting a processed substrate in a semiconductor package manufacturing process and a laminate using the same.
- Portable electronic devices such as mobile phones, notebook personal computers, and PDAs (Personal Data Assistance) are required to be smaller and lighter.
- the mounting space of semiconductor chips used in these electronic devices is also strictly limited, and high-density mounting of semiconductor chips has become a problem. Therefore, in recent years, high-density mounting of semiconductor packages has been achieved by three-dimensional mounting technology, that is, by stacking semiconductor chips and interconnecting the semiconductor chips.
- a conventional wafer level package is manufactured by forming bumps in a wafer state and then separating them by dicing.
- the semiconductor chip is likely to be chipped.
- the fan-out type WLP can increase the number of pins, and can prevent chipping of the semiconductor chip by protecting the end portion of the semiconductor chip.
- the fan-out type WLP includes a step of forming a processed substrate by molding a plurality of semiconductor chips with a resin sealing material and then wiring to one surface of the processed substrate, a step of forming a solder bump, and the like.
- the sealing material may be deformed and the processed substrate may change in dimensions.
- the dimension of the processed substrate changes, it becomes difficult to perform wiring with high density on one surface of the processed substrate, and it becomes difficult to accurately form solder bumps.
- the present invention has been made in view of the above circumstances, and its technical problem is to create a support substrate that hardly causes a dimensional change of a processed substrate and a laminated body using the support substrate, thereby high-density mounting of a semiconductor package. To contribute.
- the present inventor has found that the above technical problem can be solved by adopting a glass substrate as a support substrate and strictly regulating the thermal expansion coefficient of the glass substrate.
- the present invention is proposed. That is, the supporting glass substrate of the present invention is characterized in that an average linear thermal expansion coefficient in a temperature range of 20 to 200 ° C. is more than 81 ⁇ 10 ⁇ 7 / ° C. and not more than 110 ⁇ 10 ⁇ 7 / ° C. To do.
- the “average linear thermal expansion coefficient in the temperature range of 20 to 200 ° C.” can be measured with a dilatometer.
- the glass substrate is easy to smooth the surface and has rigidity. Therefore, when a glass substrate is used as the support substrate, the processed substrate can be supported firmly and accurately. In addition, the glass substrate easily transmits light such as ultraviolet light and infrared light. Therefore, when a glass substrate is used as the support substrate, the processed substrate and the support glass substrate can be easily fixed by providing an adhesive layer or the like with an ultraviolet curable adhesive or the like. Further, the processing substrate and the supporting glass substrate can be easily separated by providing a release layer or the like that absorbs infrared rays. As another method, the processed substrate and the supporting glass substrate can be easily separated by providing an adhesive layer or the like with an ultraviolet curable tape or the like.
- the average linear thermal expansion coefficient in the temperature range of 20 to 200 ° C. is more than 81 ⁇ 10 ⁇ 7 / ° C. and is regulated to 110 ⁇ 10 ⁇ 7 / ° C. or less.
- the thermal expansion coefficients of the processed substrate and the supporting glass substrate are easily matched.
- the thermal expansion coefficients of the two match, it becomes easy to suppress a dimensional change (particularly warp deformation) of the processed substrate during processing.
- wiring on one surface of the processed substrate can be performed with high density, and solder bumps can be accurately formed.
- the supporting glass substrate of the present invention has an average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. of more than 85 ⁇ 10 ⁇ 7 / ° C. and not more than 115 ⁇ 10 ⁇ 7 / ° C.
- the “average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C.” can be measured with a dilatometer.
- the supporting glass substrate of the present invention is preferably used for supporting a processed substrate in a semiconductor package manufacturing process.
- the support glass substrate of the present invention is preferably formed by an overflow down draw method.
- the supporting glass substrate of the present invention preferably has a Young's modulus of 65 GPa or more.
- Young's modulus refers to a value measured by a bending resonance method. 1 GPa corresponds to approximately 101.9 kgf / mm 2 .
- the supporting glass substrate of the present invention has a glass composition, in mass%, SiO 2 50 ⁇ 80% , Al 2 O 3 1 ⁇ 20%, B 2 O 3 0 ⁇ 20%, MgO 0 ⁇ 10% CaO 0 to 10%, SrO 0 to 7%, BaO 0 to 7%, ZnO 0 to 7%, Na 2 O 0 to 25%, and K 2 O 0 to 25% are preferably contained.
- the supporting glass substrate of the present invention has a glass composition in terms of mass% of SiO 2 55 to 70%, Al 2 O 3 3 to 18%, B 2 O 3 0 to 8%, MgO 0 to 5%.
- CaO 0 to 10%, SrO 0 to 5%, BaO 0 to 5%, ZnO 0 to 5%, Na 2 O 2 to 23%, K 2 O 0 to 20% are preferably contained.
- the supporting glass substrate of the present invention preferably has a thickness of less than 2.0 mm, a thickness deviation of 30 ⁇ m or less, and a warpage of 60 ⁇ m or less.
- the “warp amount” refers to the sum of the absolute value of the maximum distance between the highest point and the least square focal plane in the entire supporting glass substrate and the absolute value of the lowest point and the least square focal plane. For example, it can be measured by a Bow / Warp measuring device SBW-331ML / d manufactured by Kobelco Kaken.
- the laminate of the present invention is a laminate comprising at least a processed substrate and a supporting glass substrate for supporting the processed substrate, wherein the supporting glass substrate is the above-described supporting glass substrate.
- the processed substrate preferably includes a semiconductor chip molded with at least a sealing material.
- a method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, a step of transporting the stacked body, and a processed substrate.
- a support glass substrate is said support glass substrate. Note that the “process for transporting the laminate” and the “process for processing the processed substrate” do not need to be performed separately and may be performed simultaneously.
- the processing includes a step of wiring on one surface of the processed substrate.
- the processing includes a step of forming solder bumps on one surface of the processed substrate.
- the semiconductor package manufacturing method of the present invention is characterized by being manufactured by the above-described semiconductor package manufacturing method.
- the electronic device of this invention is an electronic device provided with a semiconductor package, Comprising: A semiconductor package is said semiconductor package.
- the average linear thermal expansion coefficient in the temperature range of 20 to 200 ° C. is more than 81 ⁇ 10 ⁇ 7 / ° C. and not more than 110 ⁇ 10 ⁇ 7 / ° C., preferably 82 ⁇ 10 It is ⁇ 7 / ° C. or more and 95 ⁇ 10 ⁇ 7 / ° C. or less, particularly 83 ⁇ 10 ⁇ 7 / ° C. or more and 91 ⁇ 10 ⁇ 7 / ° C. or less.
- the thermal expansion coefficients of the processed substrate and the supporting glass substrate are difficult to match. If the thermal expansion coefficients of the two are mismatched, a dimensional change (particularly warp deformation) of the processed substrate is likely to occur during processing.
- the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. is more than 85 ⁇ 10 ⁇ 7 / ° C. and not more than 115 ⁇ 10 ⁇ 7 / ° C., preferably not less than 86 ⁇ 10 ⁇ 7 / ° C. And not more than 100 ⁇ 10 ⁇ 7 / ° C., particularly not less than 87 ⁇ 10 ⁇ 7 / ° C. and not more than 95 ⁇ 10 ⁇ 7 / ° C.
- the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. is outside the above range, the thermal expansion coefficients of the processed substrate and the supporting glass substrate are difficult to match. If the thermal expansion coefficients of the two are mismatched, a dimensional change (particularly warp deformation) of the processed substrate is likely to occur during processing.
- Supporting glass substrate of the present invention has a glass composition, in mass%, SiO 2 50 ⁇ 80% , Al 2 O 3 1 ⁇ 20%, B 2 O 3 0 ⁇ 20%, MgO 0 ⁇ 10%, CaO 0 ⁇ It preferably contains 10%, SrO 0-7%, BaO 0-7%, ZnO 0-7%, Na 2 O 0-25%, K 2 O 0-25%.
- the reason for limiting the content of each component as described above will be described below.
- % display represents the mass% unless there is particular notice.
- SiO 2 is a main component that forms a glass skeleton.
- the content of SiO 2 is preferably 50 to 80%, 55 to 75%, 58 to 70%, in particular 60 to 68%.
- the Young's modulus, acid resistance tends to decrease.
- the SiO 2 content is too large, the high-temperature viscosity becomes high and the meltability tends to be lowered, and devitrified crystals such as cristobalite are likely to precipitate, and the liquidus temperature is likely to rise. Become.
- Al 2 O 3 is a component that enhances the Young's modulus and a component that suppresses phase separation and devitrification.
- the content of Al 2 O 3 is preferably 1 to 20%, 3 to 18%, 4 to 16%, 5 to 13%, 6 to 12%, particularly 7 to 10%.
- the content of Al 2 O 3 is too small, easily Young's modulus is lowered and also the glass phase separation, easily devitrified.
- the content of Al 2 O 3 is too large, the higher the viscosity at high temperature meltability, moldability tends to decrease.
- B 2 O 3 is a component that enhances meltability and devitrification resistance, and is a component that improves the ease of scratching and increases strength.
- the content of B 2 O 3 is preferably 0 to 20%, 1 to 12%, 2 to 10%, in particular 3 to 8%.
- meltability, devitrification resistance is liable to lower, also resistance tends to decrease with respect to hydrofluoric acid chemical.
- Young's modulus, acid resistance tends to decrease.
- Al 2 O 3 —B 2 O 3 is preferably more than 0%, 1% or more, 3% or more, 5% or more, 7% or more, and particularly preferably 9% or more.
- Al 2 O 3 —B 2 O 3 refers to a value obtained by subtracting the B 2 O 3 content from the Al 2 O 3 content.
- MgO is a component that lowers the viscosity at high temperature and increases the meltability, and among alkaline earth metal oxides, it is a component that significantly increases the Young's modulus.
- the content of MgO is preferably 0 to 10%, 0 to 8%, 0 to 5%, 0 to 3%, 0 to 2%, especially 0 to 1%. When there is too much content of MgO, devitrification resistance will fall easily.
- CaO is a component that lowers the high temperature viscosity and remarkably increases the meltability. Further, among the alkaline earth metal oxides, since the introduced raw material is relatively inexpensive, it is a component that lowers the raw material cost.
- the content of CaO is preferably 0 to 10%, 0.5 to 8%, 1 to 6%, particularly 2 to 5%. When there is too much content of CaO, it will become easy to devitrify glass. In addition, when there is too little content of CaO, it will become difficult to receive the said effect.
- SrO is a component that suppresses phase separation and is a component that improves devitrification resistance.
- the SrO content is preferably 0-7%, 0-5%, 0-3%, especially 0-1%. When there is too much content of SrO, it will become easy to devitrify glass.
- BaO is a component that increases devitrification resistance.
- the content of BaO is preferably 0-7%, 0-5%, 0-3%, 0-1%. When there is too much content of BaO, it will become easy to devitrify glass.
- the mass ratio CaO / (MgO + CaO + SrO + BaO) is preferably 0.5 or more, 0.6 or more, 0.7 or more, 0.8 or more, and particularly preferably 0.9 or more. If the mass ratio CaO / (MgO + CaO + SrO + BaO) is too small, the raw material cost is likely to increase. “CaO / (MgO + CaO + SrO + BaO)” indicates a value obtained by dividing the content of CaO by the total amount of MgO, CaO, SrO, and BaO.
- ZnO is a component that lowers the high temperature viscosity and remarkably increases the meltability.
- the content of ZnO is preferably 0 to 7%, 0.1 to 5%, particularly 0.5 to 3%. When there is too little content of ZnO, it will become difficult to receive the said effect. In addition, when there is too much content of ZnO, it will become easy to devitrify glass.
- Na 2 O is an important component for optimizing the coefficient of thermal expansion, and is a component that contributes to the initial melting of the glass raw material while lowering the high-temperature viscosity to significantly increase the meltability.
- the content of Na 2 O is preferably 0 to 25%, 5 to 25%, 8 to 24%, 11 to 23%, 13 to 21%, particularly more than 15 to 19%. If the content of Na 2 O is too small, the meltability tends to be lowered, and the thermal expansion coefficient may be unduly lowered. On the other hand, when the content of Na 2 O is too large, there is a concern that the thermal expansion coefficient becomes unduly high.
- the mass ratio Al 2 O 3 / Na 2 O is preferably 0.20 to 1.3, 0.25 to 1.0, 0.30 to 0.85, 0.00 from the viewpoint of optimizing the thermal expansion coefficient. 35 to 0.65, especially 0.40 to 0.55.
- K 2 O is a component for adjusting the thermal expansion coefficient, and is a component that contributes to the initial melting of the glass raw material while lowering the high-temperature viscosity to increase the meltability.
- the content of K 2 O is preferably 0 to 25%, 0 to 20%, 0 to 15%, 0 to 10%, 0 to 6%, particularly 0 to 1%. When the content of K 2 O is too large, there is a concern that the thermal expansion coefficient becomes unduly high.
- the content of Na 2 O + K 2 O is preferably 12 to 35%, 15 to 25%, 16 to 23%, 17 to 22%, especially 18 to 21%. This makes it easy to regulate the average linear thermal expansion coefficient in the temperature range of 20 to 200 ° C. to more than 81 ⁇ 10 ⁇ 7 to 110 ⁇ 10 ⁇ 7 / ° C.
- Na 2 O + K 2 O is the total amount of Na 2 O and K 2 O.
- the mass ratio Na 2 O / (Na 2 O + K 2 O) is preferably more than 0.5, 0.6 or more, 0.7 or more, 0.8 or more, 0.9 or more when importance is placed on improving the meltability.
- it is preferably 0.65 or less, 0.6 or less, 0.55 or less, less than 0.5, 0.45 or less, particularly 0.4 or less.
- “Na 2 O / (Na 2 O + K 2 O)” is a value obtained by dividing the content of Na 2 O by the total amount of Na 2 O and K 2 O.
- the content of other components other than the above components is preferably 10% or less, and particularly preferably 5% or less in total, from the viewpoint of accurately enjoying the effects of the present invention.
- Fe 2 O 3 is a component that can be introduced as an impurity component or a fining agent component.
- the content of Fe 2 O 3 is preferably 0.05% or less, 0.03% or less, and particularly 0.02% or less.
- “Fe 2 O 3 ” referred to in the present invention includes divalent iron oxide and trivalent iron oxide, and the divalent iron oxide is handled in terms of Fe 2 O 3 . Similarly, other oxides are handled based on the indicated oxide.
- the content of As 2 O 3 is preferably 1% or less, 0.5% or less, particularly 0.1% or less, and it is desirable not to contain it substantially.
- “substantially does not contain As 2 O 3 ” refers to the case where the content of As 2 O 3 in the glass composition is less than 0.05%.
- the content of Sb 2 O 3 is preferably 1% or less, 0.5% or less, particularly 0.1% or less, and it is desirable not to contain it substantially.
- “substantially does not contain Sb 2 O 3 ” refers to a case where the content of Sb 2 O 3 in the glass composition is less than 0.05%.
- SnO 2 is a component having a good clarification action in a high temperature region and a component that lowers the high temperature viscosity.
- the SnO 2 content is preferably 0 to 1%, 0.001 to 1%, 0.01 to 0.9%, especially 0.05 to 0.7%.
- the content of SnO 2 is too large, the devitrification crystal SnO 2 is likely to precipitate. Incidentally, when the content of SnO 2 is too small, it becomes difficult to enjoy the above-mentioned effects.
- metal powders such as F, Cl, SO 3 , C, Al, Si, etc. may be introduced up to about 3% each as a fining agent.
- CeO 2 or the like can be introduced up to about 3%, but it is necessary to pay attention to a decrease in ultraviolet transmittance.
- Cl is a component that promotes melting of glass. If Cl is introduced into the glass composition, the melting temperature can be lowered and the clarification action can be promoted. As a result, the melting cost can be lowered and the glass production kiln can be easily extended. However, when there is too much Cl content, there is a possibility of corroding the metal parts around the glass manufacturing kiln. Therefore, the Cl content is preferably 3% or less, 1% or less, 0.5% or less, and particularly 0.1% or less.
- P 2 O 5 is a component that can suppress the precipitation of devitrified crystals.
- the content of P 2 O 5 is preferably 0 to 2.5%, 0 to 1.5%, 0 to 0.5%, particularly 0 to 0.3%.
- TiO 2 is a component that lowers the high-temperature viscosity and increases the meltability, and also suppresses solarization. However, when a large amount of TiO 2 is introduced, the glass is colored and the transmittance tends to decrease. Therefore, the content of TiO 2 is preferably 0 to 5%, 0 to 3%, 0 to 1%, particularly 0 to 0.02%.
- ZrO 2 is a component that improves chemical resistance and Young's modulus. However, when a large amount of ZrO 2 is introduced, the glass tends to be devitrified, and since the introduced raw material is hardly meltable, unmelted crystalline foreign matter may be mixed into the product substrate. Therefore, the content of ZrO 2 is preferably 0 to 5%, 0 to 3%, 0 to 1%, particularly 0 to 0.5%.
- Y 2 O 3 , Nb 2 O 5 , and La 2 O 3 have a function of increasing the strain point, Young's modulus, and the like. However, if the content of these components is 5%, especially more than 1%, the raw material cost and product cost may increase.
- the supporting glass substrate of the present invention preferably has the following characteristics.
- the Young's modulus is preferably 65 GPa or more, 67 GPa or more, 68 GPa or more, 69 GPa or more, 70 GPa or more, 71 GPa or more, 72 GPa or more, particularly 73 GPa or more. If the Young's modulus is too low, it is difficult to maintain the rigidity of the laminate, and the processed substrate is likely to be deformed, warped, or damaged.
- the liquidus temperature is preferably less than 1150 ° C, 1120 ° C or less, 1100 ° C or less, 1080 ° C or less, 1050 ° C or less, 1010 ° C or less, 980 ° C or less, 960 ° C or less, 950 ° C or less, particularly 940 ° C or less.
- the glass substrate can be easily formed by the downdraw method, particularly the overflow downdraw method, so that it is easy to produce a glass substrate having a small plate thickness, and the plate thickness deviation can be reduced without polishing the surface. Can be reduced.
- the overall plate thickness deviation can be reduced to less than 2.0 ⁇ m, particularly less than 1.0 ⁇ m, by a small amount of polishing.
- the manufacturing cost of the glass substrate can be reduced. Furthermore, it becomes easy to prevent a situation where devitrification crystals are generated during the glass substrate manufacturing process and the productivity of the glass substrate is lowered.
- the “liquid phase temperature” is obtained by passing the standard sieve 30 mesh (500 ⁇ m) and putting the glass powder remaining on the 50 mesh (300 ⁇ m) in a platinum boat, and holding it in a temperature gradient furnace for 24 hours. It can be calculated by measuring the temperature at which precipitation occurs.
- the viscosity at the liquidus temperature is preferably 10 4.6 dPa ⁇ s or more, 10 5.0 dPa ⁇ s or more, 10 5.2 dPa ⁇ s or more, 10 5.4 dPa ⁇ s or more, 10 5.6 dPa. ⁇ S or more, especially 10 5.8 dPa ⁇ s or more.
- the glass substrate can be easily formed by the downdraw method, particularly the overflow downdraw method, so that it is easy to produce a glass substrate having a small plate thickness, and the plate thickness deviation can be reduced without polishing the surface. Can be increased.
- the overall plate thickness deviation can be reduced to less than 2.0 ⁇ m, particularly less than 1.0 ⁇ m, by a small amount of polishing.
- the manufacturing cost of the glass substrate can be reduced.
- the “viscosity at the liquidus temperature” can be measured by a platinum ball pulling method. The viscosity at the liquidus temperature is an index of moldability. The higher the viscosity at the liquidus temperature, the better the moldability.
- the temperature at 10 2.5 dPa ⁇ s is preferably 1580 ° C. or lower, 1500 ° C. or lower, 1450 ° C. or lower, 1400 ° C. or lower, 1350 ° C. or lower, particularly 1200 to 1300 ° C.
- “temperature at 10 2.5 dPa ⁇ s” can be measured by a platinum ball pulling method. The temperature at 10 2.5 dPa ⁇ s corresponds to the melting temperature, and the lower the temperature, the better the melting property.
- the support glass substrate of the present invention is preferably formed by a downdraw method, particularly an overflow downdraw method.
- molten glass overflows from both sides of a heat-resistant bowl-shaped structure, and the overflowed molten glass joins at the lower top end of the bowl-shaped structure and is formed downward to produce a glass substrate. It is a method to do.
- the surface to be the surface of the glass substrate is not in contact with the bowl-shaped refractory, and is formed in a free surface state. For this reason, it becomes easy to produce a glass substrate with a small plate thickness, and the plate thickness deviation can be reduced without polishing the surface.
- the overall plate thickness deviation can be reduced to less than 2.0 ⁇ m, particularly less than 1.0 ⁇ m, by a small amount of polishing. As a result, the manufacturing cost of the glass substrate can be reduced.
- the glass substrate forming method in addition to the overflow downdraw method, for example, a slot down method, a redraw method, a float method, or the like can be adopted.
- the glass substrate of the present invention preferably has a substantially disk shape or wafer shape, and the diameter is preferably 100 mm to 500 mm, particularly preferably 150 mm to 450 mm. In this way, it becomes easy to apply to the manufacturing process of a semiconductor package. You may process into other shapes, for example, shapes, such as a rectangle, as needed.
- the roundness is preferably 1 mm or less, 0.1 mm or less, 0.05 mm or less, particularly 0.03 mm or less.
- the definition of the roundness is a value obtained by subtracting the minimum value from the maximum value of the outer shape of the wafer.
- the plate thickness is preferably less than 2.0 mm, 1.5 mm or less, 1.2 mm or less, 1.1 mm or less, 1.0 mm or less, particularly 0.9 mm or less.
- the plate thickness decreases, the mass of the laminate becomes lighter, and thus handling properties are improved.
- the plate thickness is preferably 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, particularly more than 0.7 mm.
- the thickness deviation is preferably 30 ⁇ m or less, 20 ⁇ m or less, 10 ⁇ m or less, 5 ⁇ m or less, 4 ⁇ m or less, 3 ⁇ m or less, 2 ⁇ m or less, 1 ⁇ m or less, particularly 0.1 to 1 ⁇ m or less.
- the arithmetic average roughness Ra is preferably 100 nm or less, 50 nm or less, 20 nm or less, 10 nm or less, 5 nm or less, 2 nm or less, 1 nm or less, particularly 0.5 nm or less.
- the higher the surface accuracy the easier it is to improve the processing accuracy. In particular, since the wiring accuracy can be increased, high-density wiring is possible.
- the “arithmetic average roughness Ra” can be measured by a stylus type surface roughness meter or an atomic force microscope (AFM).
- the support glass substrate of the present invention is preferably formed by polishing the surface after being formed by the overflow downdraw method. If it does in this way, it will become easy to regulate board thickness deviation to 2 micrometers or less, 1 micrometer or less, especially less than 1 micrometer.
- the warp amount is preferably 60 ⁇ m or less, 55 ⁇ m or less, 50 ⁇ m or less, 1 to 45 ⁇ m, particularly 5 to 40 ⁇ m.
- the smaller the warp amount the easier it is to improve the accuracy of the processing. In particular, since the wiring accuracy can be increased, high-density wiring is possible.
- the ultraviolet transmittance at a thickness of 300 nm is preferably 40% or more, 50% or more, 60% or more, 70% or more, particularly 80% or more. If the ultraviolet transmittance is too low, it becomes difficult to bond the processed substrate and the support substrate by the adhesive layer due to the irradiation of ultraviolet light. Further, when an adhesive layer or the like is provided with an ultraviolet curable tape or the like, it becomes difficult to easily separate the processed substrate and the supporting glass substrate.
- the “UV transmittance at the plate thickness direction and wavelength of 300 nm” can be evaluated by measuring the spectral transmittance at a wavelength of 300 nm using, for example, a double beam spectrophotometer.
- the support glass substrate of the present invention is preferably not subjected to ion exchange treatment, and preferably has no compressive stress layer on the surface.
- the ion exchange process is performed, the manufacturing cost of the supporting glass substrate increases. Furthermore, when ion exchange treatment is performed, it becomes difficult to reduce the overall thickness deviation of the supporting glass substrate.
- the support glass substrate of this invention does not exclude the aspect which performs an ion exchange process and forms a compressive-stress layer in the surface. From the viewpoint of increasing mechanical strength, it is preferable to perform ion exchange treatment to form a compressive stress layer on the surface.
- the laminate of the present invention is a laminate comprising at least a processed substrate and a supporting glass substrate for supporting the processed substrate, wherein the supporting glass substrate is the supporting glass substrate described above.
- the technical characteristics (preferable structure and effect) of the laminate of the present invention overlap with the technical characteristics of the support glass substrate of the present invention. Therefore, in the present specification, detailed description of the overlapping portions is omitted.
- an ultraviolet curable tape can also be used as an adhesive layer.
- the laminate of the present invention preferably has an adhesive layer between the processed substrate and the supporting glass substrate.
- the adhesive layer is preferably a resin, for example, a thermosetting resin, a photocurable resin (particularly an ultraviolet curable resin), or the like.
- a resin for example, a thermosetting resin, a photocurable resin (particularly an ultraviolet curable resin), or the like.
- what has the heat resistance which can endure the heat processing in the manufacturing process of a semiconductor package is preferable. Thereby, it becomes difficult to melt
- the laminate of the present invention preferably further has a release layer between the processed substrate and the supporting glass substrate, more specifically between the processed substrate and the adhesive layer. If it does in this way, it will become easy to peel a processed substrate from a support glass substrate, after performing predetermined processing processing to a processed substrate. Peeling of the processed substrate is preferably performed with irradiation light such as laser light from the viewpoint of productivity.
- irradiation light such as laser light from the viewpoint of productivity.
- the laser light source an infrared laser light source such as a YAG laser (wavelength 1064 nm) or a semiconductor laser (wavelength 780 to 1300 nm) can be used.
- disassembles by irradiating an infrared laser can be used for a peeling layer.
- a substance that efficiently absorbs infrared rays and converts it into heat can also be added to the resin. For example, carbon black, graphite powder, fine metal powder, dye, pigment or the like can
- the peeling layer is made of a material that causes “in-layer peeling” or “interfacial peeling” by irradiation light such as laser light. That is, when light of a certain intensity is irradiated, the bonding force between atoms or molecules in an atom or molecule disappears or decreases, and ablation or the like is caused to cause peeling.
- the component contained in the release layer is released as a gas due to irradiation of irradiation light, the separation layer is released, and when the release layer absorbs light and becomes a gas, and its vapor is released, resulting in separation There is.
- the supporting glass substrate is preferably larger than the processed substrate.
- the method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminated body including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, a step of transporting the laminated body, and a processed substrate.
- a supporting glass substrate is the above-described supporting glass substrate.
- the processing is preferably performed by wiring on one surface of the processed substrate or forming solder bumps on one surface of the processed substrate.
- the processing since the processed substrate is difficult to change in dimensions during these processes, these steps can be appropriately performed.
- one surface of a processed substrate (usually the surface opposite to the supporting glass substrate) is mechanically polished, and one surface of the processed substrate (usually a supporting glass substrate) Either a process of dry-etching the surface on the opposite side or a process of wet-etching one surface of the processed substrate (usually the surface opposite to the supporting glass substrate) may be used.
- the processed substrate is unlikely to warp and the rigidity of the stacked body can be maintained. As a result, the above processing can be performed appropriately.
- the semiconductor package of the present invention is manufactured by the above-described semiconductor package manufacturing method.
- the technical characteristics (preferable configuration and effect) of the semiconductor package of the present invention overlap with the technical characteristics of the manufacturing method of the supporting glass substrate, the laminate, and the semiconductor package of the present invention. Therefore, in the present specification, detailed description of the overlapping portions is omitted.
- An electronic device of the present invention is an electronic device including a semiconductor package, and the semiconductor package is the semiconductor package described above.
- the technical characteristics (preferable configuration and effect) of the electronic device of the present invention overlap with the technical characteristics of the supporting glass substrate, the laminate, the semiconductor package manufacturing method, and the semiconductor package of the present invention. Therefore, in the present specification, detailed description of the overlapping portions is omitted.
- FIG. 1 is a conceptual perspective view showing an example of a laminate 1 of the present invention.
- the laminate 1 includes a supporting glass substrate 10 and a processed substrate 11.
- the supporting glass substrate 10 is attached to the processed substrate 11 in order to prevent a dimensional change of the processed substrate 11.
- a release layer 12 and an adhesive layer 13 are disposed between the support glass substrate 10 and the processed substrate 11.
- the peeling layer 12 is in contact with the supporting glass substrate 10, and the adhesive layer 13 is in contact with the processed substrate 11.
- the laminate 1 is laminated in the order of the supporting glass substrate 10, the release layer 12, the adhesive layer 13, and the processed substrate 11.
- the shape of the support glass substrate 10 is determined according to the processed substrate 11, in FIG. 1, the shapes of the support glass substrate 10 and the processed substrate 11 are both substantially disk shapes.
- the release layer 12 for example, a resin that decomposes when irradiated with a laser can be used. A substance that efficiently absorbs laser light and converts it into heat can also be added to the resin. For example, carbon black, graphite powder, fine metal powder, dye, pigment or the like can be added to the resin.
- the release layer 12 is formed by plasma CVD, spin coating by a sol-gel method, or the like.
- the adhesive layer 13 is made of a resin, and is applied and formed by, for example, various printing methods, inkjet methods, spin coating methods, roll coating methods, and the like.
- An ultraviolet curable tape can also be used.
- the adhesive layer 13 is removed by dissolution with a solvent or the like after the supporting glass substrate 10 is peeled from the processed substrate 11 by the peeling layer 12.
- the ultraviolet curable tape can be removed with a peeling tape after being irradiated with ultraviolet rays.
- FIG. 2 is a conceptual cross-sectional view showing a manufacturing process of a fan out type WLP.
- FIG. 2A shows a state in which the adhesive layer 21 is formed on one surface of the support member 20. A peeling layer may be formed between the support member 20 and the adhesive layer 21 as necessary.
- FIG. 2B a plurality of semiconductor chips 22 are pasted on the adhesive layer 21. At that time, the surface on the active side of the semiconductor chip 22 is brought into contact with the adhesive layer 21.
- the semiconductor chip 22 is molded with a resin sealing material 23.
- the sealing material 23 is made of a material having little dimensional change after compression molding and little dimensional change when forming a wiring. Subsequently, as shown in FIGS.
- Tables 1 and 2 show examples of the present invention (sample Nos. 1 to 34).
- a glass batch in which glass raw materials were prepared so as to have the glass composition in the table was placed in a platinum crucible and melted at 1550 ° C. for 4 hours.
- the mixture was stirred and homogenized using a platinum stirrer.
- the molten glass was poured out on a carbon plate, formed into a plate shape, and then gradually cooled from a temperature about 20 ° C. higher than the annealing point to room temperature at 3 ° C./min.
- the temperature at 0 dPa ⁇ s, the liquid phase temperature TL, the viscosity ⁇ at the liquid phase temperature TL, the Young's modulus E, and the ultraviolet transmittance T at a wavelength of 300 nm were evaluated.
- Average linear thermal expansion coefficient alpha 30 ⁇ 380 in the temperature range of average linear thermal expansion coefficient ⁇ 20 ⁇ 200, 30 ⁇ 380 °C in the temperature range of 20 ⁇ 200 ° C. is a value measured by a dilatometer.
- the density ⁇ is a value measured by the well-known Archimedes method.
- strain point Ps, the annealing point Ta, and the softening point Ts are values measured based on the method of ASTM C336.
- the temperature at a high temperature viscosity of 10 4.0 dPa ⁇ s, 10 3.0 dPa ⁇ s, and 10 2.5 dPa ⁇ s is a value measured by a platinum ball pulling method.
- the liquid phase temperature TL is the temperature at which crystals pass after passing through a standard sieve 30 mesh (500 ⁇ m), putting the glass powder remaining on 50 mesh (300 ⁇ m) into a platinum boat and holding it in a temperature gradient furnace for 24 hours. It is the value measured by microscopic observation.
- the viscosity ⁇ at the liquidus temperature is a value obtained by measuring the viscosity of the glass at the liquidus temperature TL by the platinum ball pulling method.
- the Young's modulus E refers to a value measured by the resonance method.
- sample no. Nos. 1 to 34 are considered to be suitable as supporting glass substrates used for supporting the processed substrate in the manufacturing process of the semiconductor manufacturing apparatus.
- each sample of [Example 2] was produced as follows. First, the sample Nos. After preparing the glass raw material so as to have a glass composition of 1 to 34, the glass raw material is supplied to a glass melting furnace and melted at 1500 to 1600 ° C., and then the molten glass is supplied to an overflow downdraw molding apparatus, and the sheet thickness is 0 Each was molded to 7 mm. After processing the obtained glass substrate (overall plate thickness deviation of about 4.0 ⁇ m) to a thickness of ⁇ 300 mm ⁇ 0.7 mm, both surfaces thereof were polished by a polishing apparatus.
- both surfaces of the glass substrate were sandwiched between a pair of polishing pads having different outer diameters, and both surfaces of the glass substrate were polished while rotating the glass substrate and the pair of polishing pads together.
- the polishing pad was made of urethane, the average particle size of the polishing slurry used in the polishing treatment was 2.5 ⁇ m, and the polishing rate was 15 m / min.
- the whole board thickness deviation and curvature amount were measured by Bow / Warp measuring apparatus SBW-331ML / d by Kobelco Kaken. As a result, the overall plate thickness deviation was less than 1.0 ⁇ m, and the warpage amount was 35 ⁇ m or less.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Glass Compositions (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
10、26 支持ガラス基板
11、24 加工基板
12 剥離層
13、21、25 接着層
20 支持部材
22 半導体チップ
23 封止材
28 配線
29 半田バンプ
Claims (15)
- 20~200℃の温度範囲における平均線熱膨張係数が81×10-7/℃超であり、且つ110×10-7/℃以下であることを特徴とする支持ガラス基板。
- 30~380℃の温度範囲における平均線熱膨張係数が85×10-7/℃超であり、且つ115×10-7/℃以下であることを特徴とする支持ガラス基板。
- 半導体パッケージの製造工程で加工基板の支持に用いることを特徴とする請求項1又は2に記載の支持ガラス基板。
- オーバーフローダウンドロー法で成形されてなることを特徴とする請求項1~3の何れかに記載の支持ガラス基板。
- ヤング率が65GPa以上であることを特徴とする請求項1~4の何れかに記載の支持ガラス基板。
- ガラス組成として、質量%で、SiO2 50~80%、Al2O3 1~20%、B2O3 0~20%、MgO 0~10%、CaO 0~10%、SrO 0~7%、BaO 0~7%、ZnO 0~7%、Na2O 0~25%、K2O 0~25%を含有することを特徴とする請求項1~5の何れかに記載の支持ガラス基板。
- ガラス組成として、質量%で、SiO2 55~70%、Al2O3 3~18%、B2O3 0~8%、MgO 0~5%、CaO 0~10%、SrO 0~5%、BaO 0~5%、ZnO 0~5%、Na2O 2~23%、K2O 0~20%を含有することを特徴とする請求項6に記載の支持ガラス基板。
- 板厚が2.0mm未満であり、板厚偏差が30μm以下であり、且つ反り量が60μm以下であることを特徴とする請求項1~7の何れかに記載の支持ガラス基板。
- 少なくとも加工基板と加工基板を支持するための支持ガラス基板とを備える積層体であって、支持ガラス基板が請求項1~8の何れかに記載の支持ガラス基板であることを特徴とする積層体。
- 加工基板が、少なくとも封止材でモールドされた半導体チップを備えることを特徴とする請求項9に記載の積層体。
- 少なくとも加工基板と加工基板を支持するための支持ガラス基板とを備える積層体を用意する工程と、
積層体を搬送する工程と、
加工基板に対して、加工処理を行う工程と、を有すると共に、支持ガラス基板が請求項1~8の何れかに記載の支持ガラス基板であることを特徴とする半導体パッケージの製造方法。 - 加工処理が、加工基板の一方の表面に配線する工程を含むことを特徴とする請求項11に記載の半導体パッケージの製造方法。
- 加工処理が、加工基板の一方の表面に半田バンプを形成する工程を含むことを特徴とする請求項11又は12に記載の半導体パッケージの製造方法。
- 請求項11~13の何れかに記載の半導体パッケージの製造方法により作製されたことを特徴とする半導体パッケージ。
- 半導体パッケージを備える電子機器であって、
半導体パッケージが、請求項14に記載の半導体パッケージであることを特徴とする電子機器。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210859949.1A CN115108719A (zh) | 2014-09-03 | 2015-08-27 | 支承玻璃基板及使用其的层叠体 |
CN201580038593.3A CN106660855A (zh) | 2014-09-03 | 2015-08-27 | 支承玻璃基板及使用其的层叠体 |
JP2016546598A JP6741214B2 (ja) | 2014-09-03 | 2015-08-27 | 支持ガラス基板及びこれを用いた積層体 |
KR1020177001285A KR102402822B1 (ko) | 2014-09-03 | 2015-08-27 | 지지 유리 기판 및 이것을 사용한 적층체 |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014-178807 | 2014-09-03 | ||
JP2014178807 | 2014-09-03 | ||
JP2014-210437 | 2014-10-15 | ||
JP2014210437 | 2014-10-15 | ||
JP2015-031495 | 2015-02-20 | ||
JP2015031495 | 2015-02-20 | ||
JP2015083852 | 2015-04-16 | ||
JP2015-083852 | 2015-04-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2016035674A1 true WO2016035674A1 (ja) | 2016-03-10 |
Family
ID=55439739
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2015/074269 WO2016035674A1 (ja) | 2014-09-03 | 2015-08-27 | 支持ガラス基板及びこれを用いた積層体 |
Country Status (5)
Country | Link |
---|---|
JP (3) | JP6741214B2 (ja) |
KR (1) | KR102402822B1 (ja) |
CN (2) | CN106660855A (ja) |
TW (1) | TWI671271B (ja) |
WO (1) | WO2016035674A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018110163A1 (ja) * | 2016-12-14 | 2018-06-21 | 日本電気硝子株式会社 | 支持ガラス基板及びこれを用いた積層体 |
JP2018095544A (ja) * | 2016-12-14 | 2018-06-21 | 日本電気硝子株式会社 | 支持ガラス基板及びこれを用いた積層体 |
JP2019085313A (ja) * | 2017-11-09 | 2019-06-06 | 日本電気硝子株式会社 | ガラス板及びこれを用いた波長変換パッケージ |
WO2019163491A1 (ja) * | 2018-02-20 | 2019-08-29 | 日本電気硝子株式会社 | ガラス |
WO2022168964A1 (ja) * | 2021-02-05 | 2022-08-11 | 日本板硝子株式会社 | ガラス組成物ならびにガラスフィラーおよびその製造方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019021911A1 (ja) * | 2017-07-26 | 2019-01-31 | Agc株式会社 | 半導体パッケージ用支持ガラス |
CN116462406A (zh) * | 2017-07-26 | 2023-07-21 | 日本电气硝子株式会社 | 支承玻璃基板和使用了其的层叠基板 |
JP7445186B2 (ja) * | 2018-12-07 | 2024-03-07 | 日本電気硝子株式会社 | ガラス |
CN111056752B (zh) * | 2019-12-18 | 2023-12-22 | 东旭集团有限公司 | 显示面板用的玻璃基板组件和玻璃基板组件的制备方法 |
WO2023032163A1 (ja) | 2021-09-03 | 2023-03-09 | 株式会社レゾナック | 半導体装置を製造する方法、仮固定材、及び、仮固定材の半導体装置を製造するための応用 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002025040A (ja) * | 2000-06-30 | 2002-01-25 | Hitachi Ltd | 磁気ディスク用ガラス基板及びそれを用いた磁気ディスク |
JP2011136895A (ja) * | 2009-12-04 | 2011-07-14 | Nippon Electric Glass Co Ltd | 合わせガラス |
JP2012015216A (ja) * | 2010-06-29 | 2012-01-19 | Fujitsu Ltd | 半導体装置の製造方法 |
WO2015037478A1 (ja) * | 2013-09-12 | 2015-03-19 | 日本電気硝子株式会社 | 支持ガラス基板及びこれを用いた搬送体 |
WO2015156075A1 (ja) * | 2014-04-07 | 2015-10-15 | 日本電気硝子株式会社 | 支持ガラス基板及びこれを用いた積層体 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4151161B2 (ja) * | 1998-08-11 | 2008-09-17 | 旭硝子株式会社 | 基板用ガラス |
JP4692915B2 (ja) * | 2002-05-29 | 2011-06-01 | 日本電気硝子株式会社 | プラズマディスプレイ装置用前面ガラス基板。 |
JP2004067460A (ja) * | 2002-08-07 | 2004-03-04 | Central Glass Co Ltd | ガラス組成物 |
JP5140014B2 (ja) * | 2009-02-03 | 2013-02-06 | 富士通株式会社 | 半導体装置の製造方法 |
JP5402184B2 (ja) * | 2009-04-13 | 2014-01-29 | 日本電気硝子株式会社 | ガラスフィルムおよびその製造方法 |
JP5507240B2 (ja) * | 2009-12-28 | 2014-05-28 | 株式会社小糸製作所 | 車両用灯具 |
JPWO2013118897A1 (ja) * | 2012-02-09 | 2015-05-11 | 旭硝子株式会社 | 透明導電膜形成用ガラス基板、および透明導電膜付き基板 |
JP5796905B2 (ja) * | 2012-12-25 | 2015-10-21 | 日本電気硝子株式会社 | 強化ガラス基板及びガラス並びに強化ガラス基板の製造方法 |
-
2015
- 2015-08-27 CN CN201580038593.3A patent/CN106660855A/zh active Pending
- 2015-08-27 CN CN202210859949.1A patent/CN115108719A/zh active Pending
- 2015-08-27 WO PCT/JP2015/074269 patent/WO2016035674A1/ja active Application Filing
- 2015-08-27 KR KR1020177001285A patent/KR102402822B1/ko active IP Right Grant
- 2015-08-27 JP JP2016546598A patent/JP6741214B2/ja active Active
- 2015-08-28 TW TW104128245A patent/TWI671271B/zh active
-
2020
- 2020-05-13 JP JP2020084509A patent/JP6892000B2/ja active Active
- 2020-05-13 JP JP2020084508A patent/JP6963219B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002025040A (ja) * | 2000-06-30 | 2002-01-25 | Hitachi Ltd | 磁気ディスク用ガラス基板及びそれを用いた磁気ディスク |
JP2011136895A (ja) * | 2009-12-04 | 2011-07-14 | Nippon Electric Glass Co Ltd | 合わせガラス |
JP2012015216A (ja) * | 2010-06-29 | 2012-01-19 | Fujitsu Ltd | 半導体装置の製造方法 |
WO2015037478A1 (ja) * | 2013-09-12 | 2015-03-19 | 日本電気硝子株式会社 | 支持ガラス基板及びこれを用いた搬送体 |
WO2015156075A1 (ja) * | 2014-04-07 | 2015-10-15 | 日本電気硝子株式会社 | 支持ガラス基板及びこれを用いた積層体 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018110163A1 (ja) * | 2016-12-14 | 2018-06-21 | 日本電気硝子株式会社 | 支持ガラス基板及びこれを用いた積層体 |
JP2018095544A (ja) * | 2016-12-14 | 2018-06-21 | 日本電気硝子株式会社 | 支持ガラス基板及びこれを用いた積層体 |
JP7011215B2 (ja) | 2016-12-14 | 2022-02-10 | 日本電気硝子株式会社 | 支持ガラス基板及びこれを用いた積層体 |
JP2019085313A (ja) * | 2017-11-09 | 2019-06-06 | 日本電気硝子株式会社 | ガラス板及びこれを用いた波長変換パッケージ |
JP7280546B2 (ja) | 2017-11-09 | 2023-05-24 | 日本電気硝子株式会社 | ガラス板及びこれを用いた波長変換パッケージ |
WO2019163491A1 (ja) * | 2018-02-20 | 2019-08-29 | 日本電気硝子株式会社 | ガラス |
US20200407266A1 (en) * | 2018-02-20 | 2020-12-31 | Nippon Electric Glass Co., Ltd. | Glass |
JPWO2019163491A1 (ja) * | 2018-02-20 | 2021-02-04 | 日本電気硝子株式会社 | ガラス |
JP7392914B2 (ja) | 2018-02-20 | 2023-12-06 | 日本電気硝子株式会社 | ガラス |
WO2022168964A1 (ja) * | 2021-02-05 | 2022-08-11 | 日本板硝子株式会社 | ガラス組成物ならびにガラスフィラーおよびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2016035674A1 (ja) | 2017-06-15 |
KR102402822B1 (ko) | 2022-05-27 |
CN106660855A (zh) | 2017-05-10 |
JP2020128338A (ja) | 2020-08-27 |
TW201620849A (zh) | 2016-06-16 |
JP6741214B2 (ja) | 2020-08-19 |
JP6963219B2 (ja) | 2021-11-05 |
CN115108719A (zh) | 2022-09-27 |
JP2020128337A (ja) | 2020-08-27 |
TWI671271B (zh) | 2019-09-11 |
KR20170048315A (ko) | 2017-05-08 |
JP6892000B2 (ja) | 2021-06-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6593669B2 (ja) | 支持ガラス基板及びこれを用いた搬送体 | |
JP6892000B2 (ja) | 支持ガラス基板及びこれを用いた積層体 | |
WO2015156075A1 (ja) | 支持ガラス基板及びこれを用いた積層体 | |
JP6611079B2 (ja) | ガラス板 | |
JP7268718B2 (ja) | 支持ガラス基板の製造方法 | |
WO2016111152A1 (ja) | 支持ガラス基板及びその製造方法 | |
KR102509782B1 (ko) | 지지 유리 기판 및 이것을 사용한 적층체 | |
JP2016117641A (ja) | 支持ガラス基板及びこれを用いた積層体 | |
JP6593676B2 (ja) | 積層体及び半導体パッケージの製造方法 | |
WO2017104514A1 (ja) | 支持結晶化ガラス基板及びこれを用いた積層体 | |
JP6443668B2 (ja) | 支持ガラス基板及びこれを用いた積層体 | |
JP2016169141A (ja) | 支持ガラス基板及びこれを用いた積層体 | |
WO2016111158A1 (ja) | ガラス板及びその製造方法 | |
JP6955320B2 (ja) | 積層体及び半導体パッケージの製造方法 | |
JP2018095514A (ja) | 支持ガラス基板及びこれを用いた積層体 | |
TWI755449B (zh) | 支撐玻璃基板及使用其的積層體、半導體封裝體及其製造方法以及電子機器 | |
JP2018095544A (ja) | 支持ガラス基板及びこれを用いた積層体 | |
WO2016098499A1 (ja) | 支持ガラス基板及びこれを用いた積層体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 15837459 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2016546598 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20177001285 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 15837459 Country of ref document: EP Kind code of ref document: A1 |