WO2018110163A1 - Substrat de support en verre et stratifié l'utilisant - Google Patents

Substrat de support en verre et stratifié l'utilisant Download PDF

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Publication number
WO2018110163A1
WO2018110163A1 PCT/JP2017/040365 JP2017040365W WO2018110163A1 WO 2018110163 A1 WO2018110163 A1 WO 2018110163A1 JP 2017040365 W JP2017040365 W JP 2017040365W WO 2018110163 A1 WO2018110163 A1 WO 2018110163A1
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WIPO (PCT)
Prior art keywords
glass substrate
less
substrate
supporting
supporting glass
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PCT/JP2017/040365
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English (en)
Japanese (ja)
Inventor
鈴木　良太
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日本電気硝子株式会社
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Priority claimed from JP2017170143A external-priority patent/JP7011215B2/ja
Application filed by 日本電気硝子株式会社 filed Critical 日本電気硝子株式会社
Publication of WO2018110163A1 publication Critical patent/WO2018110163A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting

Definitions

  • the present invention relates to a supporting glass substrate for supporting a processed substrate and a laminate using the same, and specifically, a supporting glass substrate used for supporting a processed substrate in a manufacturing process of a semiconductor package (semiconductor device) and the same. It relates to the laminate used.
  • Portable electronic devices such as mobile phones, notebook personal computers, and PDAs (Personal Data Assistance) are required to be smaller and lighter.
  • the mounting space of semiconductor chips used in these electronic devices is also strictly limited, and high-density mounting of semiconductor chips has become a problem. Therefore, in recent years, high-density mounting of semiconductor packages has been achieved by three-dimensional mounting technology, that is, by stacking semiconductor chips and interconnecting the semiconductor chips.
  • a conventional wafer level package is manufactured by forming bumps in a wafer state and then dicing them into individual pieces.
  • the semiconductor chip is likely to be chipped.
  • the fan-out type WLP can increase the number of pins, and can prevent chipping of the semiconductor chip by protecting the end portion of the semiconductor chip.
  • the fan-out type WLP for example, a process of arranging a plurality of semiconductor chips on a supporting glass substrate, molding with a resin sealing material, forming a processed substrate, and wiring to one surface of the processed substrate And a step of forming solder bumps.
  • the laminated body including the processed substrate and the support glass substrate is transported in the horizontal direction in a state where the support glass substrate side is in contact with the transport conveyor in the manufacturing process of the fan-out type WLP. Further, the transfer is performed while the edge of the supporting glass substrate is held by a robot arm or the like.
  • the supporting glass substrate is easily subjected to mechanical impacts from the transfer conveyor and the robot arm during transfer of the laminate.
  • the supporting glass substrate receives a mechanical impact, a crack is generated in the supporting glass substrate, and the supporting glass substrate may be damaged starting from the crack.
  • the present invention has been made in view of the above circumstances, and its technical problem is to create a supporting glass substrate that is less likely to cause cracks during conveyance of a laminate in the manufacturing process of a fan-out type WLP.
  • the inventor adopted alkali aluminosilicate glass as a supporting glass substrate, and strictly controlled the glass composition range of the alkali aluminosilicate glass to increase the crack resistance. It is found that the technical problem can be solved and is proposed as the present invention. That is, the supporting glass substrate of the present invention is a supporting glass substrate for supporting a processed substrate, and the glass composition is SiO 2 45 to 70% by mass%, Al 2 O 3 more than 10.5 to 35%. , B 2 O 3 0 to 20%, Na 2 O 5 to 25%, K 2 O 0 to 10%, MgO 1 to 10%, ZnO 0 to 5%, and crack resistance of 500 gf or more It is characterized by.
  • crack resistance refers to a load with a crack occurrence rate of 50%.
  • “Crack occurrence rate” refers to a value measured as follows. First, in a constant temperature and humidity chamber maintained at a humidity of 30% and a temperature of 25 ° C., a Vickers indenter set to a predetermined load is driven into the glass surface (optical polishing surface) for 15 seconds, and 15 seconds later, it is generated from the four corners of the indentation. Count the number of cracks (maximum 4 per indentation). Thus, after indenting the indenter 20 times and determining the total number of cracks generated, the total number of cracks generated is calculated by the formula (total number of cracks generated / 80) ⁇ 100.
  • a crack resistance measuring device for example, a Multi-Vickers hardness meter FLC-50VX manufactured by Futuretec Corporation can be used.
  • the supporting glass substrate of the present invention has a glass composition, in mass%, SiO 2 50 ⁇ 67% , Al 2 O 3 19.7 ⁇ 33%, B 2 O 3 0 ⁇ 15%, Na 2 O It preferably contains 5 to 20%, K 2 O 0 to 3%, MgO 1 to 5.5%, ZnO 0 to 3%, and has a crack resistance of 700 gf or more.
  • the support glass substrate of the present invention preferably has an average linear thermal expansion coefficient of 40 ⁇ 10 ⁇ 7 / ° C. or more and 120 ⁇ 10 ⁇ 7 / ° C. or less in a temperature range of 20 to 220 ° C. If it does in this way, when the ratio of a semiconductor chip and a sealing material will be changed in a processed substrate, it will become easy to match
  • the “average linear thermal expansion coefficient in the temperature range of 20 to 220 ° C.” can be measured with a dilatometer.
  • the supporting glass substrate of the present invention preferably has an average linear thermal expansion coefficient in the temperature range of 20 to 260 ° C. of 40 ⁇ 10 ⁇ 7 / ° C. or more and 120 ⁇ 10 ⁇ 7 / ° C. or less.
  • the “average linear thermal expansion coefficient in the temperature range of 20 to 260 ° C.” can be measured with a dilatometer.
  • the support glass substrate of the present invention preferably has an average linear thermal expansion coefficient of 42 ⁇ 10 ⁇ 7 / ° C. or more and 125 ⁇ 10 ⁇ 7 / ° C. or less in a temperature range of 30 to 380 ° C.
  • the “average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C.” can be measured with a dilatometer.
  • the supporting glass substrate of the present invention has a wafer shape or a substantially disc shape with a diameter of 100 to 500 mm, a plate thickness of less than 2.0 mm, and an overall plate thickness deviation (TTV) of 5 ⁇ m or less.
  • the amount of warpage is preferably 60 ⁇ m or less.
  • the “warp amount” refers to the sum of the absolute value of the maximum distance between the highest point and the least square focal plane in the entire supporting glass substrate and the absolute value of the lowest point and the least square focal plane. For example, it can be measured by a Bow / Warp measuring device SBW-331M / Ld manufactured by Kobelco Kaken.
  • the laminate of the present invention is a laminate comprising at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and the supporting glass substrate is preferably the supporting glass substrate.
  • the processed substrate preferably includes a semiconductor chip molded with at least a sealing material.
  • the method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and a step of performing a processing process on the processed substrate.
  • the supporting glass substrate is the above supporting glass substrate.
  • the processing includes a step of wiring on one surface of the processed substrate.
  • the processing includes a step of forming solder bumps on one surface of the processed substrate.
  • the semiconductor package of the present invention is manufactured by the above-described semiconductor package manufacturing method.
  • the electronic device of the present invention is an electronic device including a semiconductor package, and the semiconductor package is preferably the above-described semiconductor package.
  • FIG. 4 is a conceptual cross-sectional view in the A-A ′ direction of FIG.
  • the supporting glass substrate of the present invention has a glass composition in terms of mass% of SiO 2 45 to 70%, Al 2 O 3 more than 10.5 to 35%, B 2 O 3 0 to 20%, Na 2 O 5 to 25 %, K 2 O 0 to 10%, MgO 1 to 10%, ZnO 0 to 5%.
  • the reason for limiting the content of each component as described above will be described below.
  • % display represents the mass%.
  • SiO 2 is a main component that forms a glass skeleton.
  • the Young's modulus, acid resistance tends to decrease.
  • the content of SiO 2 is too large, the high-temperature viscosity becomes high, and the meltability and moldability are likely to be lowered.
  • devitrification crystals such as cristobalite are liable to precipitate, and the liquidus temperature is increased. It becomes easy to rise. Therefore, the lower limit range of SiO 2 is 45% or more, preferably 47% or more, particularly 49% or more, and the upper limit range is 70% or less, preferably 68% or less, 66% or less, particularly 65% or less. In the case where priority is given to meltability, it is 64% or less, 63% or less, particularly 62% or less.
  • Al 2 O 3 is a component that increases crack resistance. It is a component that suppresses phase separation and devitrification. However, when the content of Al 2 O 3 is too large, the higher the viscosity at high temperature moldability and meltability tends to decrease. Therefore, the lower limit range of Al 2 O 3 is more than 10.5%, preferably 11% or more, 13% or more, 15% or more, 17% or more, particularly 19.7% or more, and the upper limit range is 35% or less. Yes, preferably 30% or less, and when priority is given to meltability and moldability, it is 25% or less, particularly 20% or less.
  • B 2 O 3 is a component that enhances meltability and devitrification resistance, and is a component that improves crack resistance.
  • the lower limit range of B 2 O 3 is 0% or more, preferably 1% or more, 2% or more, 3% or more, particularly 4% or more, and the upper limit range is 20% or less, preferably 15%.
  • it is 13% or less, 11% or less, and especially 9% or less.
  • Na 2 O is an important component for adjusting the thermal expansion coefficient, and is a component that contributes to the initial melting of the glass raw material.
  • the lower limit range of Na 2 O is 5% or more, preferably 6% or more, 7% or more, 8% or more, particularly 9% or more
  • the upper limit range is 25% or less, preferably 23% or less, 21% or less, particularly 18% or less.
  • K 2 O is a component for adjusting the thermal expansion coefficient, and is a component that contributes to the initial melting of the glass raw material. However, if the content of K 2 O is too large, the thermal expansion coefficient may be unduly high. Therefore, the content of K 2 O is 0 to 10%, preferably 0 to 6%, 0 to 5%, 0.1 to 1.9%, particularly 0.2 to less than 1%.
  • MgO is a component that increases crack resistance. In addition, it is a component that lowers the high-temperature viscosity and increases the meltability, and among the alkaline earth metal oxides, it is a component that significantly increases the Young's modulus. However, when the content of MgO increases, the devitrification resistance tends to decrease. Accordingly, the content of MgO is 1 to 10%, preferably 1 to 6%, 1 to 5.5%, 2 to 5%, particularly 3 to less than 4%.
  • the mass ratio (Al 2 O 3 + B 2 O 3 + MgO) / (Na 2 O + K 2 O) is preferably 1.3 or more, 1.5 or more, 2.0 or more, 2.5 or more, particularly 3.0 or more. It is. If the mass ratio (Al 2 O 3 + B 2 O 3 + MgO) / (Na 2 O + K 2 O) is too small, the crack resistance is reduced or the scratches are easily caused, and the supporting glass substrate is easily damaged by the cracks. .
  • ZnO is a component that lowers the high-temperature viscosity and remarkably increases the meltability and moldability, and also increases the weather resistance.
  • the content of ZnO is 0 to 5%, preferably 0 to 4%, 0.1 to 2%, particularly 0.3 to 1.5%.
  • other components may be introduced as optional components.
  • the content of other components other than the above components is 25% or less, 20% or less, 15% or less, 10% or less, particularly 5% or less in total, from the viewpoint of accurately enjoying the effects of the present invention. preferable.
  • Li 2 O is a component that lowers the high-temperature viscosity and remarkably increases meltability moldability. It is also a component that increases Young's modulus. However, when the content of Li 2 O is too large, easily glass devitrified. Therefore, the content of Li 2 O is preferably 0 to 7%, 0 to 3%, 0 to 1%, particularly 0.01 to 0.1%.
  • CaO is a component that lowers the high temperature viscosity and remarkably enhances melt moldability. Further, among the alkaline earth metal oxides, since the introduced raw material is relatively inexpensive, it is a component that lowers the raw material cost. However, when there is too much content of CaO, it will become easy to devitrify glass. Therefore, the content of CaO is preferably 0 to 10%, 1 to 8%, 3 to 8%, 2 to 6%, particularly 2 to 5%.
  • SrO is a component that suppresses phase separation and is a component that improves devitrification resistance.
  • the content of SrO is preferably 0-20%, 0-15%, 0-9%, 0-5%, 0-4%, 0-3%, 0-2%, especially 0-1%. Is less than.
  • a suitable lower limit range of SrO is 0.1% or more, 1% or more, 2% or more, 4% or more, particularly 7% or more.
  • BaO is a component that increases devitrification resistance.
  • the content of BaO is preferably 0-20%, 0-14%, 0-9%, 0-5%, 0-4%, 0-3%, 0-2%, especially 0-1%. Is less than.
  • a suitable lower limit range of BaO is 0.1% or more, 1% or more, particularly 3% or more.
  • Fe 2 O 3 is a component that can be introduced as an impurity component or a fining agent component.
  • the content of Fe 2 O 3 is preferably 0.05% or less, 0.03% or less, 0.001 to 0.02%, particularly 0.005 to 0.01%.
  • Fe 2 O 3 referred to in the present invention includes divalent iron oxide and trivalent iron oxide, and the divalent iron oxide is handled in terms of Fe 2 O 3 . Similarly, other oxides are handled based on the indicated oxide.
  • As 2 O 3 acts effectively as a fining agent, but it is preferable to reduce these components as much as possible from an environmental point of view.
  • the content of As 2 O 3 is preferably 1% or less, 0.5% or less, particularly 0.1% or less, and it is desirable not to contain it substantially.
  • substantially does not contain As 2 O 3 refers to the case where the content of As 2 O 3 in the glass composition is less than 0.05%.
  • Sb 2 O 3 is a component having a good clarification action in a low temperature range.
  • the content of Sb 2 O 3 is preferably 0 to 1%, 0.001 to 1%, 0.01 to 0.9%, particularly 0.05 to 0.7%. When the content of Sb 2 O 3 is too large, the glass tends to color.
  • SnO 2 is a component having a good clarification action in a high temperature region and a component that lowers the high temperature viscosity.
  • the SnO 2 content is preferably 0 to 1%, 0.001 to 1%, 0.01 to 0.9%, especially 0.05 to 0.7%.
  • the content of SnO 2 is too large, the devitrification crystal SnO 2 is likely to precipitate. Incidentally, when the content of SnO 2 is too small, it becomes difficult to enjoy the above-mentioned effects.
  • SO 3 is a component having a clarification action.
  • the content of SO 3 is preferably 0 to 1%, 0.001 to 1%, 0.01 to 0.5%, particularly 0.05 to 0.3%. When the content of SO 3 is too large, SO 2 reboyl tends to be generated.
  • metal powders such as F, C, Al, Si, etc. may be introduced up to about 1% as fining agents.
  • CeO 2 or the like can also be introduced up to about 1%, but it is necessary to pay attention to a decrease in the ultraviolet transmittance.
  • Cl is a component that promotes melting of glass. If Cl is introduced into the glass composition, the melting temperature can be lowered and the clarification action can be promoted. As a result, the melting cost can be lowered and the glass production kiln can be easily extended. However, when there is too much Cl content, there is a possibility of corroding the metal parts around the glass manufacturing kiln. Therefore, the Cl content is preferably 3% or less, 1% or less, 0.5% or less, and particularly 0.1% or less.
  • P 2 O 5 is a component that can suppress the precipitation of devitrified crystals.
  • the content of P 2 O 5 is preferably 0 to 15%, 0 to 2.5%, 0 to 1.5%, 0 to 0.5%, particularly 0.1 to 0.3%. .
  • TiO 2 is a component that lowers the high-temperature viscosity and increases the meltability, and also suppresses solarization. However, when a large amount of TiO 2 is introduced, the glass is colored and the transmittance tends to decrease. Therefore, the content of TiO 2 is preferably 0 to 5%, 0 to 3%, 0 to 1%, particularly 0 to 0.02%.
  • ZrO 2 is a component that improves chemical resistance and Young's modulus.
  • the glass tends to be devitrified, and since the introduced raw material is hardly meltable, unmelted crystalline foreign matter may be mixed into the product substrate. Therefore, the content of ZrO 2 is preferably 0 to 10%, 0 to 7%, 0 to 5%, 0.001 to 3%, 0.01 to 1%, particularly 0.1 to 0.5%. is there.
  • Y 2 O 3 , Nb 2 O 5 , and La 2 O 3 have a function of increasing the strain point, Young's modulus, and the like. However, if the content of these components is 5%, especially more than 1%, the raw material cost and product cost may increase.
  • the supporting glass substrate of the present invention preferably has the following characteristics.
  • Crack resistance is 500 gf or more, preferably 600 gf or more, 700 gf or more, 800 gf or more, 900 gf or more, particularly 1000 gf or more. If the crack resistance is low, the support glass substrate will be cracked by the mechanical impact from the transfer conveyor or robot arm in the manufacturing process of the fan-out type WLP, and the support glass substrate will be easily damaged. Become.
  • the average coefficient of thermal expansion in the temperature range of 20 to 220 ° C. is preferably 40 ⁇ 10 ⁇ 7 / ° C. or more and 120 ⁇ 10 ⁇ 7 / ° C. or less, more preferably more than 50 ⁇ 10 ⁇ 7 / ° C. and 110 ⁇ 10 ⁇ 7 / ° C. or less, more preferably 60 ⁇ 10 ⁇ 7 / ° C. or more and 100 ⁇ 10 ⁇ 7 / ° C. or less, particularly preferably 70 ⁇ 10 ⁇ 7 / ° C. or more and 95 ⁇ 10 ⁇ 7 / ° C. or less. It is. If the average thermal expansion coefficient in the temperature range of 20 to 220 ° C. is outside the above range, the thermal expansion coefficients of the processed substrate and the supporting glass substrate are difficult to match. If the thermal expansion coefficients of the two are mismatched, a dimensional change (particularly warping deformation) of the processed substrate is likely to occur during processing.
  • the average thermal expansion coefficient in the temperature range of 20 to 260 ° C. is preferably 40 ⁇ 10 ⁇ 7 / ° C. or more and 120 ⁇ 10 ⁇ 7 / ° C. or less, more preferably more than 50 ⁇ 10 ⁇ 7 / ° C. and 110 ⁇ 10 ⁇ 7 / ° C. or less, more preferably 60 ⁇ 10 ⁇ 7 / ° C. or more and 100 ⁇ 10 ⁇ 7 / ° C. or less, particularly preferably 70 ⁇ 10 ⁇ 7 / ° C. or more and 95 ⁇ 10 ⁇ 7 / ° C. or less. It is.
  • the average thermal expansion coefficient in the temperature range of 20 to 260 ° C. is outside the above range, the thermal expansion coefficients of the processed substrate and the supporting glass substrate are difficult to match. If the thermal expansion coefficients of the two are mismatched, a dimensional change (particularly warping deformation) of the processed substrate is likely to occur during processing.
  • the average thermal expansion coefficient in the temperature range of 30 to 380 ° C. is preferably not less than 42 ⁇ 10 ⁇ 7 / ° C. and not more than 125 ⁇ 10 ⁇ 7 / ° C., more preferably more than 50 ⁇ 10 ⁇ 7 / ° C. and 110 ⁇ 10 ⁇ 7 / ° C. or less, more preferably 60 ⁇ 10 ⁇ 7 / ° C. or more and 100 ⁇ 10 ⁇ 7 / ° C. or less, particularly preferably 70 ⁇ 10 ⁇ 7 / ° C. or more and 95 ⁇ 10 ⁇ 7 / ° C. or less. It is.
  • the average thermal expansion coefficient in the temperature range of 30 to 380 ° C. is outside the above range, the thermal expansion coefficients of the processed substrate and the supporting glass substrate are difficult to match. If the thermal expansion coefficients of the two are mismatched, a dimensional change (particularly warping deformation) of the processed substrate is likely to occur during processing.
  • the temperature at 10 2.5 dPa ⁇ s is preferably 1680 ° C. or lower, 1620 ° C. or lower, 1580 ° C. or lower, 1550 ° C. or lower, 1520 ° C. or lower, particularly 1500 ° C. or lower.
  • “temperature at 10 2.5 dPa ⁇ s” can be measured by a platinum ball pulling method. The temperature at 10 2.5 dPa ⁇ s corresponds to the melting temperature, and the lower the temperature, the better the melting property.
  • the liquidus temperature is preferably less than 1300 ° C, 1200 ° C or less, 1100 ° C or less, 1050 ° C or less, 1000 ° C or less, particularly 950 ° C or less.
  • the viscosity at the liquidus temperature is preferably 10000 dPa ⁇ s or more, 30000 dPa ⁇ s or more, 60000 dPa ⁇ s or more, 100000 dPa ⁇ s or more, 200000 dPa ⁇ s or more, 300000 dPa ⁇ s or more, 500000 dPa ⁇ s or more, 800000 dPa ⁇ s or more, particularly It is 1000000 dPa ⁇ s or more.
  • the “liquid phase temperature” is obtained by passing the standard sieve 30 mesh (500 ⁇ m) and putting the glass powder remaining on the 50 mesh (300 ⁇ m) in a platinum boat, and holding it in a temperature gradient furnace for 24 hours. It can be calculated by measuring the temperature at which precipitation occurs.
  • the “viscosity at the liquidus temperature” can be measured by a platinum ball pulling method. The viscosity at the liquidus temperature is an index of moldability. The higher the viscosity at the liquidus temperature, the better the moldability.
  • the Young's modulus is preferably 65 GPa or more, 68 GPa or more, 70 GPa or more, 72 GPa or more, 73 GPa or more, particularly 74 GPa or more. If the Young's modulus is too low, it is difficult to maintain the rigidity of the laminate, and the processed substrate is likely to be deformed, warped, damaged, and the like.
  • Young's modulus refers to a value measured by a bending resonance method.
  • the supporting glass substrate of the present invention preferably has the following shape.
  • the support glass substrate of the present invention preferably has a substantially disk shape or wafer shape, and the diameter is preferably 100 mm to 500 mm, particularly preferably 150 mm to 450 mm. This facilitates application to the manufacturing process of the fan out type WLP. You may process into other shapes, for example, shapes, such as a rectangle, as needed.
  • the roundness is preferably 1 mm or less, 0.1 mm or less, 0.05 mm or less, particularly 0.03 mm or less.
  • the “roundness” is a value obtained by subtracting the minimum value from the maximum value of the outer shape of the wafer, excluding the notch portion.
  • the plate thickness is preferably less than 2.0 mm, 1.5 mm or less, 1.2 mm or less, 1.1 mm or less, 1.0 mm or less, particularly 0.9 mm or less. As the plate thickness decreases, the mass of the laminate becomes lighter, and thus handling properties are improved. On the other hand, if the plate thickness is too thin, the strength of the support glass substrate itself is lowered, and it becomes difficult to perform the function as the support substrate. Therefore, the plate thickness is preferably 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, particularly more than 0.7 mm.
  • the total thickness deviation (TTV) is preferably 5 ⁇ m or less, 4 ⁇ m or less, 3 ⁇ m or less, 2 ⁇ m or less, 1 ⁇ m or less, particularly 0.1 to less than 1 ⁇ m.
  • the arithmetic average roughness Ra is preferably 20 nm or less, 10 nm or less, 5 nm or less, 2 nm or less, 1 nm or less, particularly 0.5 nm or less.
  • the higher the surface accuracy the easier it is to improve the processing accuracy.
  • the wiring accuracy can be increased, high-density wiring is possible.
  • the strength of the supporting glass substrate is improved, and the supporting glass substrate and the laminate are hardly damaged. Furthermore, the number of reuses of the supporting glass substrate can be increased.
  • the “arithmetic average roughness Ra” can be measured by a stylus type surface roughness meter or an atomic force microscope (AFM).
  • the support glass substrate of the present invention is preferably formed by polishing the surface after being formed by the overflow downdraw method. In this way, it becomes easy to regulate the total thickness deviation (TTV) to less than 2.0 ⁇ m, 1.5 ⁇ m or less, 1.0 ⁇ m or less, particularly 0.1 to 1.0 ⁇ m or less.
  • TTV total thickness deviation
  • the amount of warp is preferably 60 ⁇ m or less, 55 ⁇ m or less, 50 ⁇ m or less, 1 to 45 ⁇ m, particularly 5 to 40 ⁇ m.
  • the smaller the warp amount the easier it is to improve the accuracy of the processing. In particular, since the wiring accuracy can be increased, high-density wiring is possible.
  • the support glass substrate of the present invention preferably has a notch portion (notch-shaped alignment portion), and the deep portion of the notch portion is more preferably substantially circular or substantially V-groove in plan view.
  • a positioning member such as a positioning pin
  • the notch portion of the support glass substrate is more preferably substantially circular or substantially V-groove in plan view.
  • the positioning member When the positioning member is brought into contact with the notch portion of the support glass substrate, the stress is easily concentrated on the notch portion, and the support glass substrate is easily damaged starting from the notch portion. In particular, when the supporting glass substrate is bent by an external force, the tendency becomes remarkable. Therefore, in the supporting glass substrate of the present invention, it is preferable that all or part of the edge region where the surface of the notch portion and the end surface intersect is chamfered. As a result, it is possible to effectively avoid damage starting from the notch portion.
  • all or part of the edge region where the surface and the end surface of the notch portion intersect is chamfered, and 50% or more of the edge region where the surface and the end surface of the notch portion intersect each other is chamfered. It is preferable that chamfering is performed, 90% or more of the edge region where the surface and the end surface of the notch portion intersect is more preferably chamfered, and the entire edge region where the surface and the end surface of the notch portion intersect each other is more preferable. More preferably, is chamfered. The larger the chamfered area at the notch, the lower the probability of breakage starting from the notch.
  • the chamfering width in the surface direction of the notch portion is preferably 50 to 900 ⁇ m, 200 to 800 ⁇ m, 300 to 700 ⁇ m, 400 to 650 ⁇ m, particularly 500 to 600 ⁇ m. If the chamfering width in the surface direction of the notch portion is too small, the support glass substrate is easily damaged starting from the notch portion. On the other hand, if the chamfering width in the surface direction of the notch portion is too large, the chamfering efficiency is lowered, and the manufacturing cost of the supporting glass substrate is likely to increase.
  • the chamfer width in the thickness direction of the notch is preferably 5 to 80%, 20 to 75%, 30 to 70%, 35 to 65%, particularly 40 to 60% of the thickness. If the chamfer width in the plate thickness direction of the notch portion is too small, the support glass substrate is likely to be damaged starting from the notch portion. On the other hand, if the chamfer width in the plate thickness direction of the notch portion is too large, the external force tends to concentrate on the end surface of the notch portion, and the support glass substrate is likely to be damaged starting from the end surface of the notch portion.
  • the support glass substrate of the present invention preferably has a two-dimensional code information identification part (mark) formed (marked) on the surface.
  • a two-dimensional code information identification part formed (marked) on the surface.
  • the information identification part is generally formed in the peripheral area of the supporting glass substrate, and is recognized by a human eye or the like as a character, a symbol, or the like.
  • the information identification unit of the support glass substrate may be automatically identified by an optical element such as a CCD camera.
  • the information identification unit can be formed by various methods.
  • the information identification unit is formed by irradiating a pulsed laser and ablating the glass in the irradiated region, that is, by laser ablation. It is preferable to form. In this way, ablation can be caused without accumulating excessive heat on the glass in the irradiated region. As a result, not only the length of cracks in the thickness direction but also the length of cracks in the surface direction extending from the dots can be reduced.
  • the support glass substrate of this invention has high crack resistance, when forming an information identification part (especially dot) by laser ablation, it has the advantage that it is hard to generate
  • the information identification unit is preferably composed of a plurality of dots.
  • the outer diameter of the dots is preferably 0.05 to 0.20 mm, 0.07 to 0.13 mm or less, and particularly 0.09 to 0.11 mm. If the external dimensions of the dots are too small, the visibility of the information identification unit tends to be reduced. On the other hand, if the external dimensions of the dots are too large, it is easy to ensure the strength of the support glass substrate.
  • the distance between the centers of adjacent dots is preferably 0.06 to 0.25 mm. If the distance between the centers of adjacent dots is too small, it is easy to ensure the strength of the support glass substrate. On the other hand, if the distance between the centers of the dots adjacent to each other is too large, the visibility of the information identification unit tends to be lowered.
  • the dot shape is preferably an annular groove.
  • the region surrounded by the annular groove (the region inside the groove) remains without being removed by the laser, and thus the strength of the region provided with the information identification unit is reduced. Can be prevented as much as possible.
  • the visibility is not greatly reduced even if the width of the groove is reduced unless the outer diameter is changed. Therefore, if the width dimension is reduced without changing the outer diameter dimension of the groove, the volume of the area inside the groove can be increased accordingly, thereby ensuring the required strength while ensuring visibility. It becomes possible to do.
  • the depth dimension of the groove for forming the dot is preferably 2 to 30 ⁇ m. If the depth dimension of the groove is too small, the visibility of the information identification unit is likely to be lowered. On the other hand, when the depth dimension of the groove is too large, it is easy to ensure the strength of the supporting glass substrate.
  • the support glass substrate of the present invention is preferably formed by a downdraw method, particularly an overflow downdraw method.
  • molten glass overflows from both sides of a heat-resistant bowl-shaped structure, and the overflowed molten glass joins at the lower top end of the bowl-shaped structure and is formed downward to produce a glass substrate. It is a method to do.
  • the surface to be the surface of the glass substrate is not in contact with the bowl-shaped refractory, and is formed in a free surface state. For this reason, with a small amount of polishing, the overall thickness deviation (TTV) can be reduced to less than 2.0 ⁇ m, particularly less than 1.0 ⁇ m. As a result, the manufacturing cost of the glass substrate can be reduced.
  • the support glass substrate of the present invention is preferably not subjected to ion exchange treatment, and preferably has no compressive stress layer on the surface.
  • the manufacturing cost of the supporting glass substrate increases, but when the ion exchange processing is not performed, the manufacturing cost of the supporting glass substrate can be reduced. Further, if the ion exchange process is performed, it becomes difficult to reduce the total thickness deviation (TTV) of the supporting glass substrate, but if the ion exchange process is not performed, such a problem is easily solved.
  • the support glass substrate of this invention does not exclude the aspect which performs an ion exchange process and forms a compressive-stress layer in the surface. Focusing only on the viewpoint of increasing the mechanical strength, it is preferable to perform ion exchange treatment and form a compressive stress layer on the surface.
  • the laminate of the present invention is a laminate comprising at least a processed substrate and a supporting glass substrate for supporting the processed substrate, wherein the supporting glass substrate is the supporting glass substrate described above.
  • the laminate of the present invention preferably has an adhesive layer between the processed substrate and the supporting glass substrate.
  • the adhesive layer is preferably a resin, for example, a thermosetting resin, a photocurable resin (particularly an ultraviolet curable resin), or the like.
  • the thing which has the heat resistance which can endure the heat processing in the manufacturing process of a fan out type WLP is preferable. Thereby, it becomes difficult to melt
  • an ultraviolet curable tape can also be used as an adhesive layer.
  • the laminate of the present invention further has a release layer between the processed substrate and the supporting glass substrate, more specifically between the processed substrate and the adhesive layer, or between the supporting glass substrate and the adhesive layer. It is preferable to have a layer. If it does in this way, it will become easy to peel a processed substrate from a support glass substrate, after performing predetermined processing processing to a processed substrate. Peeling of the processed substrate is preferably performed with irradiation light such as laser light from the viewpoint of productivity.
  • the laser light source an infrared laser light source such as a YAG laser (wavelength 1064 nm) or a semiconductor laser (wavelength 780 to 1300 nm) can be used.
  • a resin that decomposes when irradiated with an infrared laser can be used for the release layer.
  • a substance that efficiently absorbs infrared rays and converts it into heat can also be added to the resin.
  • carbon black, graphite powder, fine metal powder, dye, pigment or the like can be added to the resin.
  • the peeling layer is made of a material that causes “in-layer peeling” or “interfacial peeling” by irradiation light such as laser light. That is, when light of a certain intensity is irradiated, the bonding force between atoms or molecules in an atom or molecule disappears or decreases, and ablation or the like is caused to cause peeling.
  • the component contained in the release layer is released as a gas due to irradiation of irradiation light, the separation layer is released, and when the release layer absorbs light and becomes a gas, and its vapor is released, resulting in separation There is.
  • the supporting glass substrate is preferably larger than the processed substrate.
  • the method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and a step of processing the processed substrate.
  • the supporting glass substrate is the above supporting glass substrate.
  • the method for manufacturing a semiconductor package of the present invention further includes a step of transporting the stacked body.
  • the processing efficiency of a processing process can be improved. Note that the “process for transporting the laminate” and the “process for processing the processed substrate” do not need to be performed separately and may be performed simultaneously.
  • the processing is preferably performed by wiring on one surface of the processed substrate or forming solder bumps on one surface of the processed substrate.
  • the processing since the processed substrate is difficult to change in dimensions during these processes, these steps can be appropriately performed.
  • one surface of a processed substrate (usually the surface opposite to the supporting glass substrate) is mechanically polished, and one surface of the processed substrate (usually a supporting glass substrate) Either a process of dry-etching the surface on the opposite side or a process of wet-etching one surface of the processed substrate (usually the surface opposite to the supporting glass substrate) may be used.
  • the processed substrate is unlikely to warp and the rigidity of the stacked body can be maintained. As a result, the above processing can be performed appropriately.
  • FIG. 1 is a conceptual perspective view showing an example of a laminate 1 of the present invention.
  • the laminate 1 includes a supporting glass substrate 10 and a processed substrate 11.
  • the supporting glass substrate 10 is attached to the processed substrate 11 in order to prevent a dimensional change of the processed substrate 11.
  • a release layer 12 and an adhesive layer 13 are disposed between the support glass substrate 10 and the processed substrate 11.
  • the peeling layer 12 is in contact with the supporting glass substrate 10, and the adhesive layer 13 is in contact with the processed substrate 11.
  • the laminated body 1 is laminated in the order of the supporting glass substrate 10, the release layer 12, the adhesive layer 13, and the processed substrate 11.
  • the shape of the support glass substrate 10 is determined according to the processed substrate 11, in FIG. 1, the shapes of the support glass substrate 10 and the processed substrate 11 are both substantially disk shapes.
  • the release layer 12 for example, a resin that decomposes when irradiated with a laser can be used. A substance that efficiently absorbs laser light and converts it into heat can also be added to the resin. For example, carbon black, graphite powder, fine metal powder, dye, pigment and the like.
  • the release layer 12 is formed by plasma CVD, spin coating by a sol-gel method, or the like.
  • the adhesive layer 13 is made of a resin, and is applied and formed by, for example, various printing methods, inkjet methods, spin coating methods, roll coating methods, and the like.
  • An ultraviolet curable tape can also be used.
  • the adhesive layer 13 is removed by dissolution with a solvent or the like after the supporting glass substrate 10 is peeled from the processed substrate 11 by the peeling layer 12.
  • the ultraviolet curable tape can be removed with a peeling tape after being irradiated with ultraviolet rays.
  • FIG. 2 is a conceptual cross-sectional view showing a manufacturing process of a fan out type WLP.
  • FIG. 2A shows a state in which the adhesive layer 21 is formed on one surface of the support member 20. A peeling layer may be formed between the support member 20 and the adhesive layer 21 as necessary.
  • FIG. 2B a plurality of semiconductor chips 22 are pasted on the adhesive layer 21. At that time, the surface on the active side of the semiconductor chip 22 is brought into contact with the adhesive layer 21.
  • the semiconductor chip 22 is molded with a resin sealing material 23.
  • the sealing material 23 is made of a material having little dimensional change after compression molding and little dimensional change when forming a wiring. Subsequently, as shown in FIGS.
  • FIG. 3 is an upper conceptual view showing an example of the supporting glass substrate of the present invention.
  • the outer shape of the support glass substrate 31 is a substantially perfect wafer.
  • the outer shape of the support glass substrate 31 includes a notch portion 32 and an outer shape portion 33 that occupies an outer shape region other than the notch portion 32.
  • the notch portion 32 has a notch shape, that is, a shape having a depression.
  • the notch-shaped deep portion 34 has a substantially circular shape that is rounded in plan view, and the boundary between the notch portion 32 and the outer shape portion 33 is also a substantially circular shape that is rounded.
  • the outer shape of the support glass substrate 35 is a substantially circular wafer.
  • the outer shape of the support glass substrate 35 includes a notch portion 36 and an outer shape portion 37 that occupies an outer shape region other than the notch portion 36.
  • the notch portion 36 of the support glass substrate 35 has a notch shape, and the deep portion 38 of the notch shape has a substantially V-groove shape.
  • FIG. 4 is a conceptual cross-sectional view in the A-A ′ direction of FIG.
  • chamfered surfaces 42 and 43 are provided in an edge region where the surfaces 39 and 40 and the end surface 41 of the supporting glass substrate 31 intersect with each other.
  • the chamfering width X in the directions 39 and 40 of the supporting glass substrate 31 is 50 to 900 ⁇ m, for example, and the chamfering width Y + Y ′ of the supporting glass substrate 31 in the plate thickness direction is 20 to 80% of the plate thickness t, for example. Yes.
  • the end face 41 and the chamfered surfaces 41 and 42 are connected in a continuously rounded state, and the surfaces 39 and 40 and the chamfered surfaces 42 and 43 are connected in a continuously rounded state. is doing.
  • Tables 1 and 2 show examples of the present invention (sample Nos. 1 to 23).
  • Table 3 shows comparative examples (sample Nos. 24 to 38) of the present invention.
  • Crack resistance refers to a load at which the crack occurrence rate is 50%, and the crack occurrence rate was measured as follows. First, in a constant temperature and humidity chamber maintained at a humidity of 30% and a temperature of 25 ° C., a Vickers indenter set to a predetermined load is driven into the glass surface (optical polishing surface) for 15 seconds, and 15 seconds later, it is generated from the four corners of the indentation. Count the number of cracks (maximum 4 per indentation). Thus, after indenting 20 times and calculating
  • the average coefficient of thermal expansion in the above temperature range is a value measured with a dilatometer.
  • the density is a value measured by the well-known Archimedes method.
  • strain point Ps, the annealing point Ta, and the softening point Ts are values measured based on the method of ASTM C336.
  • the temperatures at high temperature viscosities of 10 4.0 dPa ⁇ s, 10 3.0 dPa ⁇ s and 10 2.5 dPa ⁇ s are values measured by the platinum ball pulling method.
  • the liquid phase temperature TL is the temperature at which crystals pass after passing through a standard sieve 30 mesh (500 ⁇ m), putting the glass powder remaining on 50 mesh (300 ⁇ m) into a platinum boat and holding it in a temperature gradient furnace for 24 hours. It is the value measured by microscopic observation.
  • the viscosity ⁇ at the liquidus temperature TL is a value obtained by measuring the viscosity of the glass at the liquidus temperature TL by a platinum ball pulling method.
  • the Young's modulus, rigidity, and Poisson's ratio are values measured by the resonance method.
  • sample No. In Nos. 1 to 23 the crack resistance is 600 gf or more, and therefore, it is considered that cracks are unlikely to occur during transport of the laminate in the manufacturing process of the fan-out type WLP.
  • sample No. Nos. 24 to 38 have crack resistance of 494 gf or less, and therefore, it is considered that cracks are likely to occur during transport of the laminate in the manufacturing process of the fan-out type WLP.
  • sample Nos. Listed in Tables 1 and 2 were used. After preparing a glass raw material so as to have the glass composition described in 1 to 23, it is supplied to a glass melting furnace and melted at 1600 to 1700 ° C., and then the molten glass is supplied to an overflow downdraw molding apparatus, Each was shaped so as to be 0.8 mm. About the obtained glass substrate, both surfaces were mechanically polished to reduce the overall thickness deviation (TTV) to less than 1 ⁇ m. After processing the obtained glass substrate to ⁇ 300 mm ⁇ 0.8 mm thickness, both surfaces thereof were polished by a polishing apparatus.
  • TTV thickness deviation
  • both surfaces of the glass substrate were sandwiched between a pair of polishing pads having different outer diameters, and both surfaces of the glass substrate were polished while rotating the glass substrate and the pair of polishing pads together.
  • the polishing pad was made of urethane, the average particle size of the polishing slurry used in the polishing treatment was 2.5 ⁇ m, and the polishing rate was 15 m / min.
  • the whole board thickness deviation (TTV) and curvature amount were measured by Bow / Warp measuring apparatus SBW-331ML / d by Kobelco Kaken. As a result, the total thickness deviation (TTV) was 0.85 ⁇ m or less and the warpage amount was 35 ⁇ m or less, respectively.

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Abstract

Le substrat support en verre selon la présente invention est destiné à supporter un substrat devant être traité, et est caractérisé en ce qu'il contient, en tant que composition de verre, en pourcentage en masse, de 45 à 70 % de SiO2, une quantité supérieure à 10,5 mais inférieure ou égale à 35 % d'Al2O3, de 0 à 20 % de B2O3, de 5 à 25 % de Na2O, de 0 à 10 % de K2O, de 1 à 10 % de MgO et de 0 à 5 % de ZnO, et présentant une résistance à la fissuration supérieure ou égale à 500 gf.
PCT/JP2017/040365 2016-12-14 2017-11-09 Substrat de support en verre et stratifié l'utilisant WO2018110163A1 (fr)

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WO2021241312A1 (fr) * 2020-05-28 2021-12-02 日本電気硝子株式会社 Substrat de verre de support et substrat stratifié l'utilisant

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JPH11310431A (ja) * 1998-04-27 1999-11-09 Asahi Glass Co Ltd 基板用のガラス組成物
JPH11310432A (ja) * 1998-04-27 1999-11-09 Asahi Glass Co Ltd 基板用ガラス組成物
WO2016035674A1 (fr) * 2014-09-03 2016-03-10 日本電気硝子株式会社 Substrat de support en verre et stratifié l'utilisant
JP2016124758A (ja) * 2015-01-05 2016-07-11 日本電気硝子株式会社 支持ガラス基板及びその製造方法
JP2016155736A (ja) * 2014-12-16 2016-09-01 日本電気硝子株式会社 支持ガラス基板及びこれを用いた積層体
JP2016155735A (ja) * 2014-04-07 2016-09-01 日本電気硝子株式会社 支持ガラス基板及びこれを用いた積層体
JP2016169141A (ja) * 2015-03-10 2016-09-23 日本電気硝子株式会社 支持ガラス基板及びこれを用いた積層体

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TWI641573B (zh) * 2014-04-07 2018-11-21 日本電氣硝子股份有限公司 支撐玻璃基板及使用其的積層體、半導體封裝及其製造方法以及電子設備

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JPH11310431A (ja) * 1998-04-27 1999-11-09 Asahi Glass Co Ltd 基板用のガラス組成物
JPH11310432A (ja) * 1998-04-27 1999-11-09 Asahi Glass Co Ltd 基板用ガラス組成物
JP2016155735A (ja) * 2014-04-07 2016-09-01 日本電気硝子株式会社 支持ガラス基板及びこれを用いた積層体
WO2016035674A1 (fr) * 2014-09-03 2016-03-10 日本電気硝子株式会社 Substrat de support en verre et stratifié l'utilisant
JP2016155736A (ja) * 2014-12-16 2016-09-01 日本電気硝子株式会社 支持ガラス基板及びこれを用いた積層体
JP2016124758A (ja) * 2015-01-05 2016-07-11 日本電気硝子株式会社 支持ガラス基板及びその製造方法
JP2016169141A (ja) * 2015-03-10 2016-09-23 日本電気硝子株式会社 支持ガラス基板及びこれを用いた積層体

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Publication number Priority date Publication date Assignee Title
WO2021241312A1 (fr) * 2020-05-28 2021-12-02 日本電気硝子株式会社 Substrat de verre de support et substrat stratifié l'utilisant

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