WO2016098499A1 - Substrat support en verre et stratifié l'utilisant - Google Patents

Substrat support en verre et stratifié l'utilisant Download PDF

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Publication number
WO2016098499A1
WO2016098499A1 PCT/JP2015/081983 JP2015081983W WO2016098499A1 WO 2016098499 A1 WO2016098499 A1 WO 2016098499A1 JP 2015081983 W JP2015081983 W JP 2015081983W WO 2016098499 A1 WO2016098499 A1 WO 2016098499A1
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WO
WIPO (PCT)
Prior art keywords
glass substrate
substrate
supporting
supporting glass
semiconductor package
Prior art date
Application number
PCT/JP2015/081983
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English (en)
Japanese (ja)
Inventor
鈴木　良太
能弘 高橋
Original Assignee
日本電気硝子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2015197313A external-priority patent/JP6627388B2/ja
Application filed by 日本電気硝子株式会社 filed Critical 日本電気硝子株式会社
Priority to KR1020177003666A priority Critical patent/KR102509782B1/ko
Priority to KR1020237003562A priority patent/KR102630404B1/ko
Priority to CN201580057730.8A priority patent/CN107074618A/zh
Publication of WO2016098499A1 publication Critical patent/WO2016098499A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B17/00—Forming molten glass by flowing-out, pushing-out, extruding or drawing downwardly or laterally from forming slits or by overflowing over lips
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods

Definitions

  • the present invention relates to a supporting glass substrate and a laminate using the same, and more specifically to a supporting glass substrate used for supporting a processed substrate in a semiconductor package manufacturing process and a laminate using the same.
  • Portable electronic devices such as mobile phones, notebook personal computers, and PDAs (Personal Data Assistance) are required to be smaller and lighter.
  • the mounting space of semiconductor chips used in these electronic devices is also strictly limited, and high-density mounting of semiconductor chips has become a problem. Therefore, in recent years, high-density mounting of semiconductor packages has been achieved by three-dimensional mounting technology, that is, by stacking semiconductor chips and interconnecting the semiconductor chips.
  • a conventional wafer level package is manufactured by forming bumps in a wafer state and then separating them by dicing.
  • the semiconductor chip is likely to be chipped.
  • the fan-out type WLP can increase the number of pins, and can prevent chipping of the semiconductor chip by protecting the end portion of the semiconductor chip.
  • the fan-out type WLP includes a step of forming a processed substrate by molding a plurality of semiconductor chips with a resin sealing material and then wiring to one surface of the processed substrate, a step of forming a solder bump, and the like.
  • the sealing material may be deformed and the processed substrate may change in dimensions.
  • the dimension of the processed substrate changes, it becomes difficult to perform wiring with high density on one surface of the processed substrate, and it becomes difficult to accurately form solder bumps.
  • the present invention has been made in view of the above circumstances, and its technical problem is to create a support substrate that hardly causes a dimensional change of a processed substrate and a laminated body using the support substrate, thereby high-density mounting of a semiconductor package. To contribute.
  • the present inventors have found that the above technical problem can be solved by adopting a glass substrate as a support substrate and strictly regulating the thermal expansion coefficient of the glass substrate.
  • This is proposed as the present invention. That is, the supporting glass substrate of the present invention has an average linear thermal expansion coefficient in the temperature range of 20 to 200 ° C. of more than 110 ⁇ 10 ⁇ 7 / ° C. and 160 ⁇ 10 ⁇ 7 / ° C. or less.
  • the “average linear thermal expansion coefficient in the temperature range of 20 to 200 ° C.” can be measured with a dilatometer.
  • the glass substrate is easy to smooth the surface and has rigidity. Therefore, when a glass substrate is used as the support substrate, the processed substrate can be supported firmly and accurately. In addition, the glass substrate easily transmits light such as ultraviolet light and infrared light. Therefore, when a glass substrate is used as the support substrate, the processed substrate and the support glass substrate can be easily fixed by providing an adhesive layer or the like with an ultraviolet curable adhesive or the like. Further, the processing substrate and the supporting glass substrate can be easily separated by providing a release layer or the like that absorbs infrared rays. As another method, the processed substrate and the supporting glass substrate can be easily separated by providing an adhesive layer or the like with an ultraviolet curable tape or the like.
  • the average linear thermal expansion coefficient in the temperature range of 20 to 200 ° C. is more than 110 ⁇ 10 ⁇ 7 / ° C. and is regulated to 160 ⁇ 10 ⁇ 7 / ° C. or less.
  • the thermal expansion coefficients of the processed substrate and the supporting glass substrate are easily matched.
  • the thermal expansion coefficients of the two match, it becomes easy to suppress a dimensional change (particularly warp deformation) of the processed substrate during processing.
  • wiring on one surface of the processed substrate can be performed with high density, and solder bumps can be accurately formed.
  • the supporting glass substrate of the present invention has an average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. of more than 115 ⁇ 10 ⁇ 7 / ° C. and not more than 165 ⁇ 10 ⁇ 7 / ° C.
  • the “average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C.” can be measured with a dilatometer.
  • the supporting glass substrate of the present invention is preferably used for supporting a processed substrate in a semiconductor package manufacturing process.
  • the supporting glass substrate of the present invention has a mating surface inside the glass, that is, formed by the overflow down draw method.
  • the supporting glass substrate of the present invention preferably has a Young's modulus of 65 GPa or more.
  • Young's modulus refers to a value measured by a bending resonance method. 1 GPa corresponds to approximately 101.9 kgf / mm 2 .
  • the supporting glass substrate of the present invention has a glass composition, in mass%, SiO 2 50 ⁇ 70% , Al 2 O 3 1 ⁇ 20%, B 2 O 3 0 ⁇ 15%, MgO 0 ⁇ 10% CaO 0 to 10%, SrO 0 to 7%, BaO 0 to 7%, ZnO 0 to 7%, Na 2 O 10 to 30%, and K 2 O 2 to 25% are preferably contained.
  • the supporting glass substrate of the present invention has a glass composition in terms of mass% of SiO 2 53 to 65%, Al 2 O 3 3 to 13%, B 2 O 3 0 to 10%, MgO 0 to 6%.
  • “Na 2 O + K 2 O” is the total amount of Na 2 O and K 2 O.
  • the supporting glass substrate of the present invention preferably has a thickness of less than 2.0 mm, a thickness deviation of 30 ⁇ m or less, and a warpage of 60 ⁇ m or less.
  • the “warp amount” refers to the sum of the absolute value of the maximum distance between the highest point and the least square focal plane in the entire supporting glass substrate and the absolute value of the lowest point and the least square focal plane. For example, it can be measured by SBW-331ML / d manufactured by Kobelco Kaken.
  • the laminate of the present invention is a laminate comprising at least a processed substrate and a supporting glass substrate for supporting the processed substrate, wherein the supporting glass substrate is the above-described supporting glass substrate.
  • the processed substrate preferably includes a semiconductor chip molded with at least a sealing material.
  • the method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and performs processing on the processed substrate.
  • a supporting glass substrate is the above-mentioned supporting glass substrate.
  • the processing includes a step of wiring on one surface of the processed substrate.
  • the processing includes a step of forming solder bumps on one surface of the processed substrate.
  • the semiconductor package manufacturing method of the present invention is characterized by being manufactured by the above-described semiconductor package manufacturing method.
  • the electronic device of this invention is an electronic device provided with a semiconductor package, Comprising: A semiconductor package is said semiconductor package.
  • the glass substrate of the present invention has a glass composition, in mass%, SiO 2 50 ⁇ 70% , Al 2 O 3 1 ⁇ 20%, B 2 O 3 0 ⁇ 15%, MgO 0 ⁇ 10% , CaO 0 to 10%, SrO 0 to 7%, BaO 0 to 7%, ZnO 0 to 7%, Na 2 O 10 to 30%, K 2 O 2 to 25%, and a temperature of 20 to 200 ° C.
  • the average linear thermal expansion coefficient in the range is more than 110 ⁇ 10 ⁇ 7 / ° C. and not more than 160 ⁇ 10 ⁇ 7 / ° C.
  • the glass substrate of the present invention has a glass composition, in mass%, SiO 2 50 ⁇ 70% , Al 2 O 3 1 ⁇ 20%, B 2 O 3 0 ⁇ 15%, MgO 0 ⁇ 10% , CaO 0-10%, SrO 0-7%, BaO 0-7%, ZnO 0-7%, Na 2 O 10-30%, K 2 O 2-25%, and a temperature of 30-380 ° C.
  • the average linear thermal expansion coefficient in the range is more than 115 ⁇ 10 ⁇ 7 / ° C. and not more than 165 ⁇ 10 ⁇ 7 / ° C.
  • the supporting glass substrate of the present invention it is more than 110 ⁇ 10 ⁇ 7 / ° C. and not more than 160 ⁇ 10 ⁇ 7 / ° C., preferably not less than 115 ⁇ 10 ⁇ 7 / ° C. and not more than 155 ⁇ 10 ⁇ 7 / ° C. Particularly preferred is 120 ⁇ 10 ⁇ 7 / ° C. or more and 150 ⁇ 10 ⁇ 7 / ° C. or less.
  • the thermal expansion coefficients of the processed substrate and the supporting glass substrate are difficult to match. If the thermal expansion coefficients of the two are mismatched, a dimensional change (particularly warp deformation) of the processed substrate is likely to occur during processing.
  • the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. is more than 115 ⁇ 10 ⁇ 7 / ° C. and not more than 165 ⁇ 10 ⁇ 7 / ° C., preferably not less than 120 ⁇ 10 ⁇ 7 / ° C. and 160 ⁇ 10 ⁇ 7 / ° C. or less, particularly preferably 125 ⁇ 10 ⁇ 7 / ° C. or more and 155 ⁇ 10 ⁇ 7 / ° C. or less.
  • the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. is outside the above range, the thermal expansion coefficients of the processed substrate and the supporting glass substrate are difficult to match. If the thermal expansion coefficients of the two are mismatched, a dimensional change (particularly warp deformation) of the processed substrate is likely to occur during processing.
  • the supporting glass substrate of the present invention has a glass composition of 50% by mass to SiO 2 50 to 70%, Al 2 O 3 1 to 20%, B 2 O 3 0 to 15%, MgO 0 to 10%, CaO 0 to It preferably contains 10%, SrO 0-7%, BaO 0-7%, ZnO 0-7%, Na 2 O 10-30%, K 2 O 2-25%.
  • the reason for limiting the content of each component as described above will be described below.
  • % display represents the mass% unless there is particular notice.
  • SiO 2 is a main component that forms a glass skeleton.
  • the content of SiO 2 is preferably 50 to 70%, 53 to 67%, 55 to 65%, 56 to 63%, particularly 57 to 62%.
  • the Young's modulus, acid resistance tends to decrease.
  • the SiO 2 content is too large, the high-temperature viscosity becomes high and the meltability tends to be lowered, and devitrified crystals such as cristobalite are likely to precipitate, and the liquidus temperature is likely to rise. Become.
  • Al 2 O 3 is a component that enhances the Young's modulus and a component that suppresses phase separation and devitrification.
  • the content of Al 2 O 3 is preferably 1-20%, 2-16%, 2.5-14%, 3-12%, 3.5-10%, especially 4-8%.
  • When the content of Al 2 O 3 is too small easily Young's modulus is lowered and also the glass phase separation, easily devitrified.
  • B 2 O 3 is a component that enhances meltability and devitrification resistance, and is a component that improves the ease of scratching and increases strength.
  • the content of B 2 O 3 is preferably 0 to 15%, 0 to 10%, 0 to 8%, 0 to 5%, 0 to 3%, particularly 0 to 1%.
  • the Young's modulus, acid resistance tends to decrease.
  • Al 2 O 3 —B 2 O 3 is preferably more than 0%, 1% or more, 3% or more, 5% or more, and particularly preferably 7% or more.
  • Al 2 O 3 —B 2 O 3 refers to a value obtained by subtracting the B 2 O 3 content from the Al 2 O 3 content.
  • MgO is a component that lowers the viscosity at high temperature and increases the meltability, and among alkaline earth metal oxides, it is a component that significantly increases the Young's modulus.
  • the content of MgO is preferably 0 to 10%, 0 to 8%, 0 to 7%, 0.1 to 6%, 0.5 to 5%, particularly 1 to 4%. When there is too much content of MgO, devitrification resistance will fall easily.
  • CaO is a component that lowers the high temperature viscosity and remarkably increases the meltability. Further, among the alkaline earth metal oxides, since the introduced raw material is relatively inexpensive, it is a component that reduces the batch cost.
  • the content of CaO is preferably 0 to 10%, 0.5 to 6%, 1 to 5%, particularly 2 to 4%. When there is too much content of CaO, it will become easy to devitrify glass. In addition, when there is too little content of CaO, it will become difficult to receive the said effect.
  • SrO is a component that suppresses phase separation and is a component that improves devitrification resistance.
  • the SrO content is preferably 0-7%, 0-5%, 0-3%, especially 0-1%. When there is too much content of SrO, batch cost will rise easily.
  • BaO is a component that increases devitrification resistance.
  • the content of BaO is preferably 0-7%, 0-5%, 0-3%, 0-1%. When there is too much content of BaO, it will become easy to raise batch cost.
  • the mass ratio CaO / (MgO + CaO + SrO + BaO) is preferably 0.5 or more, 0.6 or more, 0.7 or more, 0.8 or more, and particularly preferably 0.9 or more. If the mass ratio CaO / (MgO + CaO + SrO + BaO) is too small, the raw material cost is likely to increase. “CaO / (MgO + CaO + SrO + BaO)” indicates a value obtained by dividing the content of CaO by the total amount of MgO, CaO, SrO, and BaO.
  • ZnO is a component that lowers the high temperature viscosity and remarkably increases the meltability.
  • the content of ZnO is preferably 0 to 7%, 0 to 5%, 0 to 3%, and less than 0.1 to 1%. When there is too little content of ZnO, it will become difficult to receive the said effect. In addition, when there is too much content of ZnO, it will become easy to devitrify glass.
  • Na 2 O and K 2 O are important components for regulating the average linear thermal expansion coefficient in the temperature range of 20 to 200 ° C. to more than 110 ⁇ 10 ⁇ 7 / ° C. to 160 ⁇ 10 ⁇ 7 / ° C., Moreover, it is a component that contributes to the initial melting of the glass raw material while lowering the high-temperature viscosity to significantly increase the meltability.
  • the content of Na 2 O + K 2 O is preferably 20 to 40%, 23 to 38%, 25 to 36%, 26 to 34%, particularly 27 to 33%. If the content of Na 2 O + K 2 O is too small, the meltability tends to be lowered, and the thermal expansion coefficient may be unduly lowered. On the other hand, when the content of Na 2 O + K 2 O is too large, there is a concern that the thermal expansion coefficient becomes unduly high.
  • Na 2 O is an important component for regulating the average linear thermal expansion coefficient in the temperature range of 20 to 200 ° C. to more than 110 to 160 ⁇ 10 ⁇ 7 / ° C., and lowers the high-temperature viscosity to reduce the meltability. It is a component that significantly increases and contributes to the initial melting of the glass raw material.
  • the content of Na 2 O is preferably 10-30%, 12-25%, 13-22%, 14-21%, in particular 15-20%. If the content of Na 2 O is too small, the meltability tends to be lowered, and the thermal expansion coefficient may be unduly lowered. On the other hand, when the content of Na 2 O is too large, there is a concern that the thermal expansion coefficient becomes unduly high.
  • K 2 O is an important component for regulating the average coefficient of linear thermal expansion in the temperature range of 20 to 200 ° C. to more than 110 to 160 ⁇ 10 ⁇ 7 / ° C., and lowers the high temperature viscosity to reduce the meltability. It is a component that significantly increases and contributes to the initial melting of the glass raw material.
  • the content of K 2 O is preferably 2 to 25%, 5 to 25%, 7 to 22%, 8 to 20%, 9 to 19%, particularly 10 to 18%. If the content of K 2 O is too small, the meltability tends to decrease, and the thermal expansion coefficient may be unduly lowered. On the other hand, if the content of K 2 O is too large, the thermal expansion coefficient may be unduly high.
  • the mass ratio Al 2 O 3 / (Na 2 O + K 2 O) is preferably from the viewpoint of regulating the average linear thermal expansion coefficient in the temperature range of 20 to 200 ° C. to more than 110 to 160 ⁇ 10 ⁇ 7 / ° C. 05 to 0.7, 0.08 to 0.6, 0.1 to 0.5, 0.12 to 0.4, especially 0.14 to 0.3.
  • Al 2 O 3 / (Na 2 O + K 2 O)” is a value obtained by dividing the content of Al 2 O 3 by the total amount of Na 2 O and K 2 O.
  • the content of other components other than the above components is preferably 10% or less, and particularly preferably 5% or less in total, from the viewpoint of accurately enjoying the effects of the present invention.
  • Fe 2 O 3 is a component that can be introduced as an impurity component or a fining agent component.
  • the content of Fe 2 O 3 is preferably 0.05% or less, 0.03% or less, and particularly 0.02% or less.
  • “Fe 2 O 3 ” referred to in the present invention includes divalent iron oxide and trivalent iron oxide, and the divalent iron oxide is handled in terms of Fe 2 O 3 . Similarly, other oxides are handled based on the indicated oxide.
  • As 2 O 3 acts effectively as a fining agent, but from an environmental point of view, it is preferable to reduce this component as much as possible.
  • the content of As 2 O 3 is preferably 1% or less, 0.5% or less, particularly 0.1% or less, and it is desirable not to contain it substantially.
  • substantially does not contain As 2 O 3 refers to the case where the content of As 2 O 3 in the glass composition is less than 0.05%.
  • Sb 2 O 3 is a component having a good clarification action in a low temperature range.
  • the content of Sb 2 O 3 is preferably 0 to 1%, 0.01 to 0.7%, particularly 0.05 to 0.5%.
  • the glass tends to color. Incidentally, when the content of Sb 2 O 3 is too small, it becomes difficult to enjoy the above-mentioned effects.
  • SnO 2 is a component having a good clarification action in a high temperature region and a component that lowers the high temperature viscosity.
  • the SnO 2 content is preferably 0 to 1%, 0.001 to 1%, 0.01 to 0.9%, especially 0.05 to 0.7%.
  • the content of SnO 2 is too large, the devitrification crystal SnO 2 is likely to precipitate. Incidentally, when the content of SnO 2 is too small, it becomes difficult to enjoy the above-mentioned effects.
  • metal powders such as F, Cl, SO 3 , C, Al, Si, etc. may be introduced up to about 3% each as a fining agent.
  • CeO 2 or the like can be introduced up to about 3%, but it is necessary to pay attention to a decrease in ultraviolet transmittance.
  • Cl is a component that promotes melting of glass. If Cl is introduced into the glass composition, the melting temperature can be lowered and the clarification action can be promoted. As a result, the melting cost can be lowered and the glass production kiln can be easily extended. However, when there is too much Cl content, there is a possibility of corroding the metal parts around the glass manufacturing kiln. Therefore, the Cl content is preferably 3% or less, 1% or less, 0.5% or less, and particularly 0.1% or less.
  • P 2 O 5 is a component that can suppress the precipitation of devitrified crystals.
  • the content of P 2 O 5 is preferably 0 to 2.5%, 0 to 1.5%, 0 to 0.5%, particularly 0 to 0.3%.
  • TiO 2 is a component that lowers the high-temperature viscosity and increases the meltability, and also suppresses solarization. However, when a large amount of TiO 2 is introduced, the glass is colored and the transmittance tends to decrease. Therefore, the content of TiO 2 is preferably 0 to 5%, 0 to 3%, 0 to 1%, particularly 0 to 0.02%.
  • ZrO 2 is a component that improves chemical resistance and Young's modulus. However, when a large amount of ZrO 2 is introduced, the glass tends to be devitrified, and since the introduced raw material is hardly meltable, unmelted crystalline foreign matter may be mixed into the product substrate. Therefore, the content of ZrO 2 is preferably 0 to 5%, 0 to 3%, 0 to 1%, particularly 0 to 0.5%.
  • Y 2 O 3 , Nb 2 O 5 , and La 2 O 3 have a function of increasing the strain point, Young's modulus, and the like. However, if the content of these components is more than 5%, particularly more than 1%, batch cost and product cost may increase.
  • the supporting glass substrate of the present invention preferably has the following characteristics.
  • the liquidus temperature is preferably less than 1150 ° C, 1120 ° C or lower, 1100 ° C or lower, 1080 ° C or lower, 1050 ° C or lower, 1010 ° C or lower, 980 ° C or lower, 940 ° C or lower, 940 ° C or lower, 920 ° C or lower, 900 ° C or lower. In particular, it is 880 ° C. or lower.
  • the glass substrate can be easily formed by the downdraw method, particularly the overflow downdraw method, so that it becomes easy to produce a glass substrate having a small plate thickness, and the surface is not polished or a small amount of polishing is performed.
  • the thickness deviation can be reduced, and as a result, the manufacturing cost of the glass substrate can be reduced. Furthermore, it becomes easy to prevent a situation where devitrification crystals are generated during the glass substrate manufacturing process and the productivity of the glass substrate is lowered.
  • the “liquid phase temperature” is obtained by passing the standard sieve 30 mesh (500 ⁇ m) and putting the glass powder remaining on the 50 mesh (300 ⁇ m) in a platinum boat, and holding it in a temperature gradient furnace for 24 hours. It can be calculated by measuring the temperature at which precipitation occurs.
  • the viscosity at the liquidus temperature is preferably 10 4.3 dPa ⁇ s or more, 10 4.6 dPa ⁇ s or more, 10 5.0 dPa ⁇ s or more, 10 5.2 dPa ⁇ s or more, in particular 10 5.3 dPa ⁇ s or more.
  • the glass substrate can be easily formed by the downdraw method, particularly the overflow downdraw method, so that it becomes easy to produce a glass substrate having a small plate thickness, and the surface is not polished or a small amount of polishing is performed.
  • the thickness deviation can be increased, and as a result, the manufacturing cost of the glass substrate can be reduced.
  • the “viscosity at the liquidus temperature” can be measured by a platinum ball pulling method.
  • the viscosity at the liquidus temperature is an index of moldability. The higher the viscosity at the liquidus temperature, the better the moldability.
  • the temperature at 10 2.5 dPa ⁇ s is preferably 1480 ° C. or lower, 1400 ° C. or lower, 1350 ° C. or lower, 1300 ° C. or lower, particularly 1100 to 1250 ° C. or lower.
  • “temperature at 10 2.5 dPa ⁇ s” can be measured by a platinum ball pulling method. The temperature at 10 2.5 dPa ⁇ s corresponds to the melting temperature, and the lower the temperature, the better the melting property.
  • the Young's modulus is preferably 65 GPa or more, 67 GPa or more, 68 GPa or more, 69 GPa or more, particularly 70 GPa or more. If the Young's modulus is too low, it is difficult to maintain the rigidity of the laminate, and the processed substrate is likely to be deformed, warped, or damaged.
  • the support glass substrate of the present invention is preferably formed by a downdraw method, particularly an overflow downdraw method.
  • molten glass overflows from both sides of a heat-resistant bowl-shaped structure, and the overflowed molten glass joins at the lower top end of the bowl-shaped structure and is formed downward to produce a glass substrate. It is a method to do.
  • the surface to be the surface of the glass substrate is not in contact with the bowl-shaped refractory, and is formed in a free surface state. For this reason, it becomes easy to produce a glass substrate with a small plate thickness, and the plate thickness deviation can be reduced without polishing the surface.
  • the overall plate thickness deviation can be reduced to less than 2.0 ⁇ m, particularly less than 1.0 ⁇ m, by a small amount of polishing.
  • the manufacturing cost of the glass substrate can be reduced.
  • the structure and material of a bowl-shaped structure will not be specifically limited if a desired dimension and surface accuracy are realizable.
  • the method of applying a force when performing downward stretch molding is not particularly limited. For example, a method may be adopted in which a heat-resistant roll having a sufficiently large width is rotated and stretched in contact with glass, or a plurality of pairs of heat-resistant rolls are contacted only near the end face of the glass. It is also possible to adopt a method of stretching by stretching.
  • the glass substrate forming method in addition to the overflow downdraw method, for example, a slot down method, a redraw method, a float method, or the like can be adopted.
  • the glass substrate of the present invention preferably has a substantially disk shape or wafer shape, and the diameter is preferably 100 mm to 500 mm, particularly preferably 150 mm to 450 mm. In this way, it becomes easy to apply to the manufacturing process of a semiconductor package. You may process into other shapes, for example, shapes, such as a rectangle, as needed.
  • the roundness is preferably 1 mm or less, 0.1 mm or less, 0.05 mm or less, particularly 0.03 mm or less.
  • the definition of the roundness is a value obtained by subtracting the minimum value from the maximum value of the outer shape of the wafer.
  • the plate thickness is preferably less than 2.0 mm, 1.5 mm or less, 1.2 mm or less, 1.1 mm or less, 1.0 mm or less, particularly 0.9 mm or less.
  • the plate thickness decreases, the mass of the laminate becomes lighter, and thus handling properties are improved.
  • the plate thickness is preferably 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, particularly more than 0.7 mm.
  • the thickness deviation is preferably 30 ⁇ m or less, 20 ⁇ m or less, 10 ⁇ m or less, 5 ⁇ m or less, 4 ⁇ m or less, 3 ⁇ m or less, 2 ⁇ m or less, 1 ⁇ m or less, particularly 0.1 to 1 ⁇ m or less.
  • the arithmetic average roughness Ra is preferably 100 nm or less, 50 nm or less, 20 nm or less, 10 nm or less, 5 nm or less, 2 nm or less, 1 nm or less, particularly 0.5 nm or less.
  • the higher the surface accuracy the easier it is to improve the processing accuracy. In particular, since the wiring accuracy can be increased, high-density wiring is possible.
  • the “arithmetic average roughness Ra” can be measured by a stylus type surface roughness meter or an atomic force microscope (AFM).
  • the support glass substrate of the present invention is preferably formed by polishing the surface after being formed by the overflow downdraw method. If it does in this way, it will become easy to regulate board thickness deviation to 2 micrometers or less, 1 micrometer or less, especially less than 1 micrometer.
  • the warp amount is preferably 60 ⁇ m or less, 55 ⁇ m or less, 50 ⁇ m or less, 1 to 45 ⁇ m, particularly 5 to 40 ⁇ m.
  • the smaller the warp amount the easier it is to improve the accuracy of the processing. In particular, since the wiring accuracy can be increased, high-density wiring is possible.
  • the ultraviolet transmittance in the plate thickness direction and at a wavelength of 300 nm is preferably 40% or more, 50% or more, 60% or more, 70% or more, particularly 80% or more. If the ultraviolet transmittance is too low, it becomes difficult to bond the processed substrate and the support substrate by the adhesive layer due to the irradiation of ultraviolet light. Further, when an adhesive layer or the like is provided with an ultraviolet curable tape or the like, it becomes difficult to easily separate the processed substrate and the supporting glass substrate.
  • the “UV transmittance at the plate thickness direction and wavelength of 300 nm” can be evaluated by measuring the spectral transmittance at a wavelength of 300 nm using, for example, a double beam spectrophotometer.
  • the support glass substrate of the present invention is preferably not chemically strengthened from the viewpoint of reducing the amount of warpage, and is preferably chemically strengthened from the viewpoint of mechanical strength. That is, it is preferable not to have a compressive stress layer on the surface from the viewpoint of reducing the amount of warpage, and it is preferable to have a compressive stress layer on the surface from the viewpoint of mechanical strength.
  • the laminate of the present invention is a laminate comprising at least a processed substrate and a supporting glass substrate for supporting the processed substrate, wherein the supporting glass substrate is the supporting glass substrate described above.
  • the technical characteristics (preferable structure and effect) of the laminate of the present invention overlap with the technical characteristics of the support glass substrate of the present invention. Therefore, in the present specification, detailed description of the overlapping portions is omitted.
  • the laminate of the present invention preferably has an adhesive layer between the processed substrate and the supporting glass substrate.
  • the adhesive layer is preferably a resin, for example, a thermosetting resin, a photocurable resin (particularly an ultraviolet curable resin), or the like.
  • a resin for example, a thermosetting resin, a photocurable resin (particularly an ultraviolet curable resin), or the like.
  • what has the heat resistance which can endure the heat processing in the manufacturing process of a semiconductor package is preferable. Thereby, it becomes difficult to melt
  • an ultraviolet curable tape can also be used as an adhesive layer.
  • the laminate of the present invention further has a release layer between the processed substrate and the supporting glass substrate, more specifically between the processed substrate and the adhesive layer, or between the supporting glass substrate and the adhesive layer. It is preferable to have a layer. If it does in this way, it will become easy to peel a processed substrate from a support glass substrate, after performing predetermined processing processing to a processed substrate. Peeling of the processed substrate is preferably performed with irradiation light such as laser light from the viewpoint of productivity.
  • the laser light source an infrared laser light source such as a YAG laser (wavelength 1064 nm) or a semiconductor laser (wavelength 780 to 1300 nm) can be used.
  • disassembles by irradiating an infrared laser can be used for a peeling layer.
  • a substance that efficiently absorbs infrared rays and converts it into heat can also be added to the resin.
  • carbon black, graphite powder, fine metal powder, dye, pigment, etc. can be added to the resin.
  • the peeling layer is made of a material that causes “in-layer peeling” or “interfacial peeling” by irradiation light such as laser light. That is, when light of a certain intensity is irradiated, the bonding force between atoms or molecules in an atom or molecule disappears or decreases, and ablation or the like is caused to cause peeling.
  • the component contained in the release layer is released as a gas due to irradiation of irradiation light, the separation layer is released, and when the release layer absorbs light and becomes a gas, and its vapor is released, resulting in separation There is.
  • the supporting glass substrate is preferably larger than the processed substrate.
  • the method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and a step of processing the processed substrate.
  • the supporting glass substrate is the above supporting glass substrate.
  • the method for manufacturing a semiconductor package of the present invention includes a step of preparing a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate.
  • a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate has the material configuration described above.
  • the method for manufacturing a semiconductor package of the present invention further includes a step of transporting the stacked body.
  • the processing efficiency of a processing process can be improved. Note that the “process for transporting the laminate” and the “process for processing the processed substrate” do not need to be performed separately and may be performed simultaneously.
  • the processing is preferably performed by wiring on one surface of the processed substrate or forming solder bumps on one surface of the processed substrate.
  • the processing since the processed substrate is difficult to change in dimensions during these processes, these steps can be appropriately performed.
  • one surface of a processed substrate (usually the surface opposite to the supporting glass substrate) is mechanically polished, and one surface of the processed substrate (usually a supporting glass substrate) Either a process of dry-etching the surface on the opposite side or a process of wet-etching one surface of the processed substrate (usually the surface opposite to the supporting glass substrate) may be used.
  • the processed substrate is unlikely to warp and the rigidity of the stacked body can be maintained. As a result, the above processing can be performed appropriately.
  • the semiconductor package of the present invention is manufactured by the above-described semiconductor package manufacturing method.
  • the technical characteristics (preferable configuration and effect) of the semiconductor package of the present invention overlap with the technical characteristics of the manufacturing method of the supporting glass substrate, the laminate, and the semiconductor package of the present invention. Therefore, in the present specification, detailed description of the overlapping portions is omitted.
  • An electronic device of the present invention is an electronic device including a semiconductor package, and the semiconductor package is the semiconductor package described above.
  • the technical characteristics (preferable configuration and effect) of the electronic device of the present invention overlap with the technical characteristics of the supporting glass substrate, the laminate, the semiconductor package manufacturing method, and the semiconductor package of the present invention. Therefore, in the present specification, detailed description of the overlapping portions is omitted.
  • FIG. 1 is a conceptual perspective view showing an example of a laminate 1 of the present invention.
  • the laminate 1 includes a supporting glass substrate 10 and a processed substrate 11.
  • the supporting glass substrate 10 is attached to the processed substrate 11 in order to prevent a dimensional change of the processed substrate 11.
  • a release layer 12 and an adhesive layer 13 are disposed between the support glass substrate 10 and the processed substrate 11.
  • the peeling layer 12 is in contact with the supporting glass substrate 10, and the adhesive layer 13 is in contact with the processed substrate 11.
  • the laminate 1 is laminated in the order of the supporting glass substrate 10, the release layer 12, the adhesive layer 13, and the processed substrate 11.
  • the shape of the support glass substrate 10 is determined according to the processed substrate 11, in FIG. 1, the shapes of the support glass substrate 10 and the processed substrate 11 are both substantially disk shapes.
  • the release layer 12 for example, a resin that decomposes when irradiated with a laser can be used. A substance that efficiently absorbs laser light and converts it into heat can also be added to the resin. For example, carbon black, graphite powder, fine metal powder, dye, pigment or the like can be added to the resin.
  • the release layer 12 is formed by plasma CVD, spin coating by a sol-gel method, or the like.
  • the adhesive layer 13 is made of a resin, and is applied and formed by, for example, various printing methods, inkjet methods, spin coating methods, roll coating methods, and the like.
  • An ultraviolet curable tape can also be used.
  • the adhesive layer 13 is removed by dissolution with a solvent or the like after the supporting glass substrate 10 is peeled from the processed substrate 11 by the peeling layer 12.
  • the ultraviolet curable tape can be removed with a peeling tape after being irradiated with ultraviolet rays.
  • FIG. 2 is a conceptual cross-sectional view showing a manufacturing process of a fan out type WLP.
  • FIG. 2A shows a state in which the adhesive layer 21 is formed on one surface of the support member 20. A peeling layer may be formed between the support member 20 and the adhesive layer 21 as necessary.
  • FIG. 2B a plurality of semiconductor chips 22 are pasted on the adhesive layer 21. At that time, the surface on the active side of the semiconductor chip 22 is brought into contact with the adhesive layer 21.
  • the semiconductor chip 22 is molded with a resin sealing material 23.
  • the sealing material 23 is made of a material having little dimensional change after compression molding and little dimensional change when forming a wiring. Subsequently, as shown in FIGS.
  • Tables 1 to 5 show examples of the present invention (sample Nos. 1 to 75).
  • a glass batch in which glass raw materials were prepared so as to have the glass composition in the table was put in a platinum crucible and melted at 1500 ° C. for 4 hours.
  • the mixture was stirred and homogenized using a platinum stirrer.
  • the molten glass was poured out on a carbon plate, formed into a plate shape, and then gradually cooled from a temperature about 20 ° C. higher than the annealing point to room temperature at 3 ° C./min.
  • the temperature at 0 dPa ⁇ s, the liquid phase temperature TL, the viscosity ⁇ and the Young's modulus E at the liquid phase temperature TL were evaluated.
  • Average linear thermal expansion coefficient alpha 30 ⁇ 380 in the temperature range of average linear thermal expansion coefficient ⁇ 20 ⁇ 200, 30 ⁇ 380 °C in the temperature range of 20 ⁇ 200 ° C. is a value measured by a dilatometer.
  • the density ⁇ is a value measured by the well-known Archimedes method.
  • strain point Ps, the annealing point Ta, and the softening point Ts are values measured based on the method of ASTM C336.
  • the temperature at a high temperature viscosity of 10 4.0 dPa ⁇ s, 10 3.0 dPa ⁇ s, and 10 2.5 dPa ⁇ s is a value measured by a platinum ball pulling method.
  • the liquid phase temperature TL is the temperature at which crystals pass after passing through a standard sieve 30 mesh (500 ⁇ m), putting the glass powder remaining on 50 mesh (300 ⁇ m) into a platinum boat and holding it in a temperature gradient furnace for 24 hours. It is the value measured by microscopic observation.
  • the viscosity ⁇ at the liquidus temperature is a value obtained by measuring the viscosity of the glass at the liquidus temperature TL by the platinum ball pulling method.
  • the Young's modulus E refers to a value measured by the resonance method.
  • sample No. 1 to 75 is an average linear thermal expansion coefficient ⁇ 20 to 200 in a temperature range of 20 to 200 ° C. is 110 ⁇ 10 ⁇ 7 / ° C. to 145 ⁇ 10 ⁇ 7 / ° C., and an average linear heat in a temperature range of 30 to 380 ° C.
  • the expansion coefficient ⁇ 30 to 380 was 116 ⁇ 10 ⁇ 7 / ° C. to 157 ⁇ 10 ⁇ 7 / ° C. Therefore, sample no. Nos. 1 to 75 are considered to be suitable as a supporting glass substrate used for supporting a processed substrate in a manufacturing process of a semiconductor manufacturing apparatus.
  • each sample of [Example 2] was produced as follows. First, the sample No. described in the table was used. After preparing the glass raw material so as to have a glass composition of 1 to 75, it was supplied to a glass melting furnace and melted at 1450 to 1550 ° C., and then the molten glass was supplied to an overflow downdraw molding apparatus, and the plate thickness was 0 Each was molded to 7 mm. After processing the obtained glass substrate (overall plate thickness deviation of about 4.0 ⁇ m) to a thickness of ⁇ 300 mm ⁇ 0.7 mm, both surfaces thereof were polished by a polishing apparatus.
  • both surfaces of the glass substrate were sandwiched between a pair of polishing pads having different outer diameters, and both surfaces of the glass substrate were polished while rotating the glass substrate and the pair of polishing pads together.
  • control was sometimes performed so that a part of the glass substrate protruded from the polishing pad.
  • the polishing pad was made of urethane, the average particle size of the polishing slurry used in the polishing treatment was 2.5 ⁇ m, and the polishing rate was 15 m / min.
  • the whole board thickness deviation and curvature amount were measured by SBW-331ML / d made from Kobelco Kaken. As a result, the overall plate thickness deviation was less than 1.0 ⁇ m, and the warpage amount was 35 ⁇ m or less.
  • the supporting glass substrate of the present invention is preferably used for supporting a processed substrate in the manufacturing process of a semiconductor package, but can be applied to applications other than this application.
  • a high expansion metal substrate such as an aluminum alloy substrate
  • a high expansion ceramic substrate such as a zirconia substrate or a ferrite substrate.

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Abstract

La présente invention concerne un problème technique de production d'un substrat support qui est moins susceptible de provoquer un changement de dimension d'un substrat de traitement et un stratifié utilisant le substrat support, et contribuant ainsi à un montage à haute densité d'un boîtier de semi-conducteur. La présente invention est caractérisée en ce que le coefficient moyen de dilatation thermique linéaire dans une plage de température allant de 20 à 200 °C est supérieur à 110 × 10-7/°C et d'au plus 160 x 10-7/°C.
PCT/JP2015/081983 2014-12-16 2015-11-13 Substrat support en verre et stratifié l'utilisant WO2016098499A1 (fr)

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KR1020237003562A KR102630404B1 (ko) 2014-12-16 2015-11-13 지지 유리 기판 및 이것을 사용한 적층체
CN201580057730.8A CN107074618A (zh) 2014-12-16 2015-11-13 支承玻璃基板及使用其的层叠体

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000319036A (ja) * 1999-04-30 2000-11-21 Central Glass Co Ltd プレス成形用ガラスおよび情報記録媒体用基板ガラス
JP2000516903A (ja) * 1997-04-11 2000-12-19 サン―ゴバン ビトラージュ ガラス組成物及び化学強化されるガラスで製造された基材
JP2002025040A (ja) * 2000-06-30 2002-01-25 Hitachi Ltd 磁気ディスク用ガラス基板及びそれを用いた磁気ディスク
JP2004067460A (ja) * 2002-08-07 2004-03-04 Central Glass Co Ltd ガラス組成物
JP2012221591A (ja) * 2011-04-04 2012-11-12 Ohara Inc 発光素子及び発光素子用基板材料
JP2013116846A (ja) * 2011-01-18 2013-06-13 Nippon Electric Glass Co Ltd 強化ガラス及び強化ガラス板
JP2014024717A (ja) * 2012-07-27 2014-02-06 Asahi Glass Co Ltd Ｃｕ−Ｉｎ−Ｇａ−Ｓｅ太陽電池用ガラス板およびそれを用いた太陽電池とその製造方法
JP2014073960A (ja) * 2010-09-30 2014-04-24 Avanstrate Inc カバーガラスの製造方法及びカバーガラス

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5140014B2 (ja) 2009-02-03 2013-02-06 富士通株式会社 半導体装置の製造方法
JP5581791B2 (ja) * 2010-04-26 2014-09-03 旭硝子株式会社 固体撮像素子パッケージ用カバーガラス
JP5573422B2 (ja) * 2010-06-29 2014-08-20 富士通株式会社 半導体装置の製造方法
KR101474399B1 (ko) * 2012-05-15 2014-12-22 주식회사 엘지화학 알칼리 유리 및 그 제조 방법
KR101465170B1 (ko) * 2012-06-21 2014-11-25 주식회사 엘지화학 알칼리 유리 및 그 제조 방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000516903A (ja) * 1997-04-11 2000-12-19 サン―ゴバン ビトラージュ ガラス組成物及び化学強化されるガラスで製造された基材
JP2000319036A (ja) * 1999-04-30 2000-11-21 Central Glass Co Ltd プレス成形用ガラスおよび情報記録媒体用基板ガラス
JP2002025040A (ja) * 2000-06-30 2002-01-25 Hitachi Ltd 磁気ディスク用ガラス基板及びそれを用いた磁気ディスク
JP2004067460A (ja) * 2002-08-07 2004-03-04 Central Glass Co Ltd ガラス組成物
JP2014073960A (ja) * 2010-09-30 2014-04-24 Avanstrate Inc カバーガラスの製造方法及びカバーガラス
JP2013116846A (ja) * 2011-01-18 2013-06-13 Nippon Electric Glass Co Ltd 強化ガラス及び強化ガラス板
JP2012221591A (ja) * 2011-04-04 2012-11-12 Ohara Inc 発光素子及び発光素子用基板材料
JP2014024717A (ja) * 2012-07-27 2014-02-06 Asahi Glass Co Ltd Ｃｕ−Ｉｎ−Ｇａ−Ｓｅ太陽電池用ガラス板およびそれを用いた太陽電池とその製造方法

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