KR102200850B1 - 지지 유리 기판 및 이것을 사용한 반송체 - Google Patents

지지 유리 기판 및 이것을 사용한 반송체 Download PDF

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Publication number
KR102200850B1
KR102200850B1 KR1020157032898A KR20157032898A KR102200850B1 KR 102200850 B1 KR102200850 B1 KR 102200850B1 KR 1020157032898 A KR1020157032898 A KR 1020157032898A KR 20157032898 A KR20157032898 A KR 20157032898A KR 102200850 B1 KR102200850 B1 KR 102200850B1
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KR
South Korea
Prior art keywords
glass substrate
substrate
carrier
less
supporting glass
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KR1020157032898A
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English (en)
Korean (ko)
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KR20160055104A (ko
Inventor
신키치 미와
히카루 이케다
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니폰 덴키 가라스 가부시키가이샤
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Publication of KR20160055104A publication Critical patent/KR20160055104A/ko
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Publication of KR102200850B1 publication Critical patent/KR102200850B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67715—Changing the direction of the conveying path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Glass Compositions (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Ceramic Engineering (AREA)
KR1020157032898A 2013-09-12 2014-09-02 지지 유리 기판 및 이것을 사용한 반송체 KR102200850B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013189065 2013-09-12
JPJP-P-2013-189065 2013-09-12
PCT/JP2014/073085 WO2015037478A1 (fr) 2013-09-12 2014-09-02 Substrat de support en verre et élément de transport l'utilisant

Publications (2)

Publication Number Publication Date
KR20160055104A KR20160055104A (ko) 2016-05-17
KR102200850B1 true KR102200850B1 (ko) 2021-01-11

Family

ID=52665587

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157032898A KR102200850B1 (ko) 2013-09-12 2014-09-02 지지 유리 기판 및 이것을 사용한 반송체

Country Status (5)

Country Link
JP (1) JP6593669B2 (fr)
KR (1) KR102200850B1 (fr)
CN (2) CN105307993A (fr)
TW (1) TWI644881B (fr)
WO (1) WO2015037478A1 (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6119567B2 (ja) * 2013-11-11 2017-04-26 旭硝子株式会社 ガラス積層体の製造方法および電子デバイスの製造方法
TWI641573B (zh) * 2014-04-07 2018-11-21 日本電氣硝子股份有限公司 支撐玻璃基板及使用其的積層體、半導體封裝及其製造方法以及電子設備
CN115108719A (zh) * 2014-09-03 2022-09-27 日本电气硝子株式会社 支承玻璃基板及使用其的层叠体
JP6742593B2 (ja) * 2015-01-05 2020-08-19 日本電気硝子株式会社 支持ガラス基板の製造方法及び積層体の製造方法
JP6631935B2 (ja) * 2015-01-05 2020-01-15 日本電気硝子株式会社 ガラス板の製造方法
JP6663596B2 (ja) * 2015-03-10 2020-03-13 日本電気硝子株式会社 半導体用支持ガラス基板及びこれを用いた積層基板
JP6601493B2 (ja) * 2015-05-28 2019-11-06 Ａｇｃ株式会社 ガラス基板、および積層基板
TWI631688B (zh) * 2015-06-16 2018-08-01 勤友光電股份有限公司 用於雷射剝離處理之晶圓結構
WO2017018275A1 (fr) * 2015-07-24 2017-02-02 旭硝子株式会社 Substrat de verre, substrat stratifié, procédé de fabrication de substrat stratifié, stratifié, emballage et procédé de fabrication de substrat de verre
WO2017057446A1 (fr) 2015-10-02 2017-04-06 旭硝子株式会社 Substrat de verre, substrat stratifié et stratifié
KR102584795B1 (ko) 2015-12-16 2023-10-05 니폰 덴키 가라스 가부시키가이샤 지지 결정화 유리 기판 및 이것을 사용한 적층체
CN108367961A (zh) * 2015-12-17 2018-08-03 日本电气硝子株式会社 支承玻璃基板的制造方法
WO2017115731A1 (fr) 2015-12-28 2017-07-06 旭硝子株式会社 Substrat en verre, substrat stratifié, stratifié et procédé de production de boîtier semi-conducteur
KR20190054068A (ko) 2016-09-16 2019-05-21 에이지씨 가부시키가이샤 유리 기판 및 적층 기판
DE102018209589B4 (de) * 2017-06-22 2023-05-04 Schott Ag Verbund aus einem Bauteil, insbesondere einem elektronischen Bauteil, und einem Glas- oder Glaskeramikmaterial sowie Verfahren zu dessen Herstellung

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009164314A (ja) * 2007-12-30 2009-07-23 Fujikura Ltd 貼り合わせ基板および貼り合せ基板を用いた半導体装置の製造方法
JP2011136895A (ja) * 2009-12-04 2011-07-14 Nippon Electric Glass Co Ltd 合わせガラス

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JPH0230640A (ja) * 1988-07-19 1990-02-01 Nippon Electric Glass Co Ltd ファイバープレート用芯ガラス
JPH03237036A (ja) * 1989-08-24 1991-10-22 Nippon Electric Glass Co Ltd アルミナパッケージ用薄板状硼けい酸ガラス
JP5378158B2 (ja) * 2003-02-19 2013-12-25 日本電気硝子株式会社 半導体パッケージ用カバーガラス
JP4716245B2 (ja) * 2004-11-11 2011-07-06 日本電気硝子株式会社 ガラス基板及びその製造方法
JP5348598B2 (ja) * 2005-05-10 2013-11-20 日本電気硝子株式会社 半導体素子用ガラス基板およびそれを用いたチップスケールパッケージ
JP2007311492A (ja) * 2006-05-17 2007-11-29 Shinko Electric Ind Co Ltd 半導体装置の製造方法
US20080191334A1 (en) * 2007-02-12 2008-08-14 Visera Technologies Company Limited Glass dam structures for imaging devices chip scale package
JP2009016771A (ja) * 2007-06-08 2009-01-22 Ｈｏｙａ Ｃａｎｄｅｏ Ｏｐｔｒｏｎｉｃｓ株式会社 ウエハ支持ガラス
JP5091696B2 (ja) * 2008-01-26 2012-12-05 株式会社フジクラ 半導体パッケージの製造方法
JP5496692B2 (ja) * 2010-01-22 2014-05-21 三洋電機株式会社 半導体モジュールの製造方法
JP5573422B2 (ja) * 2010-06-29 2014-08-20 富士通株式会社 半導体装置の製造方法
JP2012105216A (ja) * 2010-11-12 2012-05-31 Sony Corp 表示制御回路及びプロジェクタ装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009164314A (ja) * 2007-12-30 2009-07-23 Fujikura Ltd 貼り合わせ基板および貼り合せ基板を用いた半導体装置の製造方法
JP2011136895A (ja) * 2009-12-04 2011-07-14 Nippon Electric Glass Co Ltd 合わせガラス

Also Published As

Publication number Publication date
CN112159100A (zh) 2021-01-01
TW201522269A (zh) 2015-06-16
KR20160055104A (ko) 2016-05-17
CN105307993A (zh) 2016-02-03
WO2015037478A1 (fr) 2015-03-19
TWI644881B (zh) 2018-12-21
JP2015078113A (ja) 2015-04-23
JP6593669B2 (ja) 2019-10-23

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