JPWO2017104513A1 - 支持ガラス基板の製造方法 - Google Patents
支持ガラス基板の製造方法 Download PDFInfo
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- JPWO2017104513A1 JPWO2017104513A1 JP2017556000A JP2017556000A JPWO2017104513A1 JP WO2017104513 A1 JPWO2017104513 A1 JP WO2017104513A1 JP 2017556000 A JP2017556000 A JP 2017556000A JP 2017556000 A JP2017556000 A JP 2017556000A JP WO2017104513 A1 JPWO2017104513 A1 JP WO2017104513A1
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- 239000000758 substrate Substances 0.000 title claims abstract description 401
- 239000011521 glass Substances 0.000 title claims abstract description 347
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 80
- 238000010438 heat treatment Methods 0.000 claims abstract description 73
- 238000000034 method Methods 0.000 claims description 67
- 239000004065 semiconductor Substances 0.000 claims description 48
- 238000005498 polishing Methods 0.000 claims description 28
- 238000005520 cutting process Methods 0.000 claims description 10
- 238000007500 overflow downdraw method Methods 0.000 claims description 10
- 239000003566 sealing material Substances 0.000 claims description 10
- 229910000679 solder Inorganic materials 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims description 2
- 239000006066 glass batch Substances 0.000 description 26
- 239000012790 adhesive layer Substances 0.000 description 18
- 239000010410 layer Substances 0.000 description 18
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 17
- 238000000465 moulding Methods 0.000 description 17
- 229910004298 SiO 2 Inorganic materials 0.000 description 16
- 239000000203 mixture Substances 0.000 description 15
- 238000002844 melting Methods 0.000 description 14
- 230000008018 melting Effects 0.000 description 14
- 239000011347 resin Substances 0.000 description 12
- 229920005989 resin Polymers 0.000 description 12
- 229910006404 SnO 2 Inorganic materials 0.000 description 11
- 239000006060 molten glass Substances 0.000 description 11
- 230000007423 decrease Effects 0.000 description 9
- 239000002994 raw material Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- 229910018068 Li 2 O Inorganic materials 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000000227 grinding Methods 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- YPHMISFOHDHNIV-FSZOTQKASA-N cycloheximide Chemical compound C1[C@@H](C)C[C@H](C)C(=O)[C@@H]1[C@H](O)CC1CC(=O)NC(=O)C1 YPHMISFOHDHNIV-FSZOTQKASA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000003280 down draw process Methods 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
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- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 230000000052 comparative effect Effects 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000004031 devitrification Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
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- 238000002474 experimental method Methods 0.000 description 1
- 239000006025 fining agent Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
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- 229910052863 mullite Inorganic materials 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
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- 238000007639 printing Methods 0.000 description 1
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- 239000002002 slurry Substances 0.000 description 1
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- 239000002904 solvent Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B32/00—Thermal after-treatment of glass products not provided for in groups C03B19/00, C03B25/00 - C03B31/00 or C03B37/00, e.g. crystallisation, eliminating gas inclusions or other impurities; Hot-pressing vitrified, non-porous, shaped glass products
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/24—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass
- B24B7/242—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass for plate glass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B17/00—Forming molten glass by flowing-out, pushing-out, extruding or drawing downwardly or laterally from forming slits or by overflowing over lips
- C03B17/06—Forming glass sheets
- C03B17/064—Forming glass sheets by the overflow downdraw fusion process; Isopipes therefor
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Abstract
Description
10、26 支持ガラス基板
11、24 加工基板
12 剥離層
13、21、25 接着層
20 支持部材
22 半導体チップ
23 封止材
28 配線
29 半田バンプ
Claims (14)
- 加工基板を支持するための支持ガラス基板の製造方法において、
支持ガラス基板を成形する成形工程と、成形後の支持ガラス基板を熱処理して、支持ガラス基板の熱膨張係数を変動させる熱処理工程と、を備えることを特徴とする支持ガラス基板の製造方法。 - 成形工程後の支持ガラス基板を熱処理して、支持ガラス基板の熱膨張係数を低下させることを特徴とする請求項1に記載の支持ガラス基板の製造方法。
- 熱処理の最高温度を(支持ガラス基板の歪点−100)℃よりも高くすることを特徴とする請求項1又は2に記載の支持ガラス基板の製造方法。
- 熱処理の最高温度に到達した後、熱処理温度を5℃/分以下の速度で降温することを特徴とする請求項1〜3の何れかに記載の支持ガラス基板の製造方法。
- 熱処理により支持ガラス基板の反り量を40μm以下に低減することを特徴とする請求項1〜4の何れかに記載の支持ガラス基板の製造方法。
- 支持ガラス基板の寸法よりも大きい熱処理用セッターを用意し、その熱処理用セッター上に、成形後の支持ガラス基板を載置した後、熱処理工程に供することを特徴とする請求項1〜5の何れかに記載の支持ガラス基板の製造方法。
- 板厚が400μm以上、且つ2mm未満になるように、支持ガラス基板を成形することを特徴とする請求項1〜6の何れかに記載の支持ガラス基板の製造方法。
- オーバーフローダウンドロー法により支持ガラス基板を成形することを特徴とする請求項1〜7の何れかに記載の支持ガラス基板の製造方法。
- 熱処理工程後に、支持ガラス基板の表面を研磨して、全体板厚偏差を2.0μm未満に低減する研磨工程を備えることを特徴とする請求項1〜8の何れかに記載の支持ガラス基板の製造方法。
- 熱処理工程後に、支持ガラス基板の周辺部を切断除去する切断除去工程を備えることを特徴とする請求項1〜9の何れかに記載の支持ガラス基板の製造方法。
- 少なくとも加工基板と加工基板を支持するための支持ガラス基板とを備える積層体を作製する積層工程と、
積層体の加工基板に対して、加工処理を行う加工処理工程と、を備えると共に、
支持ガラス基板が、請求項1〜10の何れかに記載の支持ガラス基板の製造方法により作製されていることを特徴とする半導体パッケージの製造方法。 - 加工基板が、少なくとも封止材でモールドされた半導体チップを備えることを特徴とする請求項11に記載の半導体パッケージの製造方法。
- 加工処理が、加工基板の一方の表面に配線する処理を含むことを特徴とする請求項11又は12に記載の半導体パッケージの製造方法。
- 加工処理が、加工基板の一方の表面に半田バンプを形成する処理を含むことを特徴とする請求項11〜13の何れかに記載の半導体パッケージの製造方法。
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JP2021188397A JP7268718B2 (ja) | 2015-12-17 | 2021-11-19 | 支持ガラス基板の製造方法 |
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PCT/JP2016/086427 WO2017104513A1 (ja) | 2015-12-17 | 2016-12-07 | 支持ガラス基板の製造方法 |
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KR (1) | KR102588111B1 (ja) |
CN (1) | CN108367961A (ja) |
TW (1) | TWI701221B (ja) |
WO (1) | WO2017104513A1 (ja) |
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NL2021322B1 (en) * | 2018-06-28 | 2020-01-06 | Corning Inc | Continuous methods of making glass ribbon and as-drawn glass articles from the same |
WO2020005555A1 (en) | 2018-06-28 | 2020-01-02 | Corning Incorporated | Continuous methods of making glass ribbon and as-drawn glass articles from the same |
WO2020018290A1 (en) * | 2018-07-16 | 2020-01-23 | Corning Incorporated | Setter plates and methods of ceramming glass articles using the same |
WO2020018408A1 (en) | 2018-07-16 | 2020-01-23 | Corning Incorporated | Methods for ceramming glass with nucleation and growth density and viscosity changes |
WO2020018285A1 (en) * | 2018-07-16 | 2020-01-23 | Corning Incorporated | Methods of ceramming glass articles having improved warp |
US11014848B2 (en) | 2018-07-16 | 2021-05-25 | Corning Incorporated | Glass ceramic articles having improved properties and methods for making the same |
CN113692395B (zh) | 2019-01-28 | 2023-10-31 | 康宁股份有限公司 | 玻璃陶瓷制品、组合物及其制造方法 |
JP2022547308A (ja) | 2019-09-13 | 2022-11-11 | コーニング インコーポレイテッド | ジャイロトロンマイクロ波加熱デバイスを用いてガラスリボンを形成する連続的方法 |
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