WO2014155651A1 - 炭化珪素半導体装置及びその製造方法 - Google Patents
炭化珪素半導体装置及びその製造方法 Download PDFInfo
- Publication number
- WO2014155651A1 WO2014155651A1 PCT/JP2013/059449 JP2013059449W WO2014155651A1 WO 2014155651 A1 WO2014155651 A1 WO 2014155651A1 JP 2013059449 W JP2013059449 W JP 2013059449W WO 2014155651 A1 WO2014155651 A1 WO 2014155651A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- carbon
- silicon carbide
- semiconductor device
- layer
- interface
- Prior art date
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 100
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 97
- 239000004065 semiconductor Substances 0.000 title claims description 55
- 238000000034 method Methods 0.000 title claims description 52
- 238000004519 manufacturing process Methods 0.000 title claims description 42
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims abstract description 18
- 238000000151 deposition Methods 0.000 claims abstract description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 39
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 29
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 230000001590 oxidative effect Effects 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000012298 atmosphere Substances 0.000 claims description 4
- 239000012808 vapor phase Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 20
- 230000003647 oxidation Effects 0.000 abstract description 9
- 238000007254 oxidation reaction Methods 0.000 abstract description 9
- 230000006866 deterioration Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 98
- 230000008569 process Effects 0.000 description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 32
- 239000012535 impurity Substances 0.000 description 30
- 238000005229 chemical vapour deposition Methods 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- 238000009792 diffusion process Methods 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229910021332 silicide Inorganic materials 0.000 description 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 230000004913 activation Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 150000001721 carbon Chemical class 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004002 angle-resolved photoelectron spectroscopy Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/045—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide passivating silicon carbide surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/049—Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Abstract
Description
(1)ゲート絶縁膜を形成する前に炭素間結合を含む層を除去すること
(2)化学堆積法によりゲート絶縁膜を形成すること
(3)結晶表面と絶縁膜との界面に低温短時間の窒化終端処理をすること
以下、本発明の構成要素の基本的な働きを説明する。
(1)ゲート絶縁膜を形成する前に炭素間結合を含む層を形成し、除去すること
SiCで高い特性の活性層を実現するためには、高温の活性化熱処理工程が必要であるので、機械的応力の印加は避けられない。そのため、特性必然的に炭素過剰層が形成されることになる(図1参照)。そこで、この炭素過剰層を除去する。一般に、化学反応を主体としたエッチング技術では、エッチング除去後の基板にダメージを与えないことが知られている。例えばSiC表面のエッチングでは、水素を用いた気相エッチングにより、ダメージを与えることなくエッチングできる。この炭素過剰層は2nm以下と考えられることから、10nm程度のエッチング除去を行うことで影響を取り除くことができる。
(2)化学堆積法によりゲート絶縁膜を形成すること
炭素過剰層のない結晶基板上にCVD(Chemical Vapor Deposition)法を用いてシリコン酸化膜を堆積する。例えば、SiH4にN2Oを酸化材として加えることでSiO2を堆積することができる。この方法の堆積では、基板表面の熱酸化する場合に比べ、基板結晶に機械的応力を与えないため、炭素過剰層は形成されない。
(3)結晶表面と絶縁膜との界面に低温短時間の窒化終端処理をすること
4Hの結晶性を備えたSiCのシリコン面をチャネルとするMOSFETの場合、結晶表面に酸化膜を堆積した場合、結晶表面のシリコン原子の不対電子による多数の未結合手(ダングリングボンド)が残留するため、多くの界面トラップや界面準位などが発生する。そこで、シリコン酸化膜を堆積したのち、例えば一酸化窒素(NO)を加熱して表面処理すると、一酸化窒素が堆積膜中を透過し基板界面の処理を行うことができる。すなわち、界面にシリコン-酸素結合やシリコン-窒素結合を形成することで、シリコン酸化膜やシリコン酸窒化膜を形成することができる。通常の基板表面の酸化反応で、すでに存在している結合を切断し、より安定な結合をつくるのとは異なり、界面ダングリングボンドが反応活性なため、この反応は、ダングリングボンドを単に終端する様子に近い状況になる。その様子を模式的に図2に示した。通常「終端」は、ダングリングボンドに水素原子などが結合することで、不対電子対をなくす様な反応状態を意味するが、ここでは、基板接合を切断することなくダングリングボンドをなくすという広義の意味で「終端」という表現を用いることにする。結合した酸素は、例えば堆積膜中のシリコンと結合し、シリコン酸化膜となって安定化する。また、基板のシリコンと結合した窒素と結合することでシリコン酸窒化膜を形成して安定化する。この反応をより有効に促進するには、界面付近に堆積するシリコン酸化膜のシリコン組成比を理想化学量論比状態(Stoichiometry)よりシリコン濃度を増やした、シリコンリッチな状態にしておくことが有効である。また、一部ダングリングボンドは、シリコン-窒素結合を作り、終端される。そのため、界面準位の生成などを引き起こすことがない。図2では、シリコン酸化膜堆積後のSiC界面の様子を模式的に示している。破線より上側がCVD膜(堆積したシリコン酸化膜)、下側がSiC基板である。SiC表面のシリコンダングリングボンドに酸素や窒素が結合していく様子を示している。また、ダングリングボンドと結合した酸素や窒素がCVD膜中のSiと結合することで安定化する様子を示している。このように酸素は堆積している酸化膜中のシリコンと結合するため、結晶構造を歪ませることなくダングリングボンドのない界面を形成することができる。こうしたダングリングボンドの終端処理は、再表面上での反応のため、形成される膜厚は2乃至3原子層、物理的な厚さとして5A(オングストローム)程度で行われることになる。
114、210・・・シリサイド層、500・・・ゲート、501・・・多結晶シリコン、600・・・金属配線、900・・・ゲート絶縁膜、999・・・界面処理層、950、960、970、980・・・シリコン酸化膜、
1110・・・Pウェルパターン、1115、1116・・・ガードバンドパターン、1160・・・P+拡散層パターン、1200・・・ソースパターン、1500・・・ゲートパターン、1600・・・金属配線パターン、5160・・・ウェルコンタクトパターン、5200・・・ソースコンタクトパターン、5500・・・ゲートコンタクトパターン。
Claims (7)
- ソース領域及びチャネル領域が炭化珪素基板の上面に配置され、チャネル領域の上にゲート絶縁膜を有する炭化珪素半導体装置において、
前記チャネル領域表面とゲート絶縁膜の界面が、炭素を高濃度に含まない終端処理層を介して形成されていることを特徴とする炭化珪素半導体装置。 - ソース領域及びチャネル領域が炭化珪素基板の上面に配置され、チャネル領域の上にゲート絶縁膜を有する炭化珪素半導体装置において、
前記チャネル領域表面には炭素間結合を備え、その単位平面あたりの密度が、4x1012cm-2以下であることを特徴とする炭化珪素半導体装置。 - 請求項2において、
前記チャネル領域とゲート絶縁膜との界面に、厚さが1nmより薄い界面終端層を備えることを特徴とする炭化珪素半導体装置。 - 請求項2において、
前記界面終端層が、シリコン酸窒化物であることを特徴とする炭化珪素半導体装置。 - ソース領域及びチャネル領域が炭化珪素基板の上面に配置され、チャネル領域の上にゲート絶縁膜を有する炭化珪素半導体装置の製造方法において、
前記ソース領域及びチャネル領域の表面を熱酸化する第1工程と、
前記第1工程でチャネル領域表面に生じた炭素間結合を除去する第2工程と、
前記第2工程でチャネル領域表面の上に堆積法によりゲート酸化膜を形成する第3工程と、
窒素を含む酸化雰囲気、1000℃以下で、堆積したゲート酸化膜とチャネル領域との界面の未反応結合手を終端させる第4工程とを有する炭化珪素半導体装置の製造方法。 - 請求項5において、
前記第2工程は水素を用いた気相エッチングであることを特徴とする炭化珪素半導体装置の製造方法。 - 請求項5において、窒素を含む酸化雰囲気は一酸化窒素を含むことを特徴とする炭化珪素半導体装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015507858A JP6099733B2 (ja) | 2013-03-29 | 2013-03-29 | 炭化珪素半導体装置 |
PCT/JP2013/059449 WO2014155651A1 (ja) | 2013-03-29 | 2013-03-29 | 炭化珪素半導体装置及びその製造方法 |
DE112013006715.3T DE112013006715B4 (de) | 2013-03-29 | 2013-03-29 | Siliciumcarbid-Halbleitervorrichtung und Verfahren zu ihrer Herstellung |
US14/778,058 US10062759B2 (en) | 2013-03-29 | 2013-03-29 | Silicon carbide semiconductor device and method for manufacturing same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2013/059449 WO2014155651A1 (ja) | 2013-03-29 | 2013-03-29 | 炭化珪素半導体装置及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014155651A1 true WO2014155651A1 (ja) | 2014-10-02 |
Family
ID=51622716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2013/059449 WO2014155651A1 (ja) | 2013-03-29 | 2013-03-29 | 炭化珪素半導体装置及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10062759B2 (ja) |
JP (1) | JP6099733B2 (ja) |
DE (1) | DE112013006715B4 (ja) |
WO (1) | WO2014155651A1 (ja) |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015050396A (ja) * | 2013-09-03 | 2015-03-16 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2016157736A (ja) * | 2015-02-23 | 2016-09-01 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
JP2017045962A (ja) * | 2015-08-28 | 2017-03-02 | 国立大学法人九州大学 | 不純物導入装置、不純物導入方法、半導体装置の製造方法及び半導体装置 |
JP2017126604A (ja) * | 2016-01-12 | 2017-07-20 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び昇降機 |
JP2017216306A (ja) * | 2016-05-30 | 2017-12-07 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
JP2017216305A (ja) * | 2016-05-30 | 2017-12-07 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
JP2018046246A (ja) * | 2016-09-16 | 2018-03-22 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
WO2018139556A1 (ja) * | 2017-01-25 | 2018-08-02 | ローム株式会社 | 半導体装置 |
JP2018148029A (ja) * | 2017-03-06 | 2018-09-20 | パナソニックIpマネジメント株式会社 | 半導体エピタキシャルウェハ、半導体素子、および半導体素子の製造方法 |
JP2020027894A (ja) * | 2018-08-13 | 2020-02-20 | 富士電機株式会社 | 絶縁ゲート型半導体装置及び絶縁ゲート型半導体装置の製造方法 |
JP2021044355A (ja) * | 2019-09-10 | 2021-03-18 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2021141199A (ja) * | 2020-03-05 | 2021-09-16 | 日立金属株式会社 | SiCウェハおよびその製造方法 |
JP2021180262A (ja) * | 2020-05-14 | 2021-11-18 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
JP2022030298A (ja) * | 2020-08-06 | 2022-02-18 | 株式会社東芝 | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 |
WO2022130788A1 (ja) * | 2020-12-18 | 2022-06-23 | 国立大学法人京都大学 | SiC半導体素子の製造方法及びSiCMOSFET |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015065318A (ja) * | 2013-09-25 | 2015-04-09 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
JP2015065289A (ja) * | 2013-09-25 | 2015-04-09 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
JP2015065316A (ja) * | 2013-09-25 | 2015-04-09 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
US20180233574A1 (en) * | 2017-02-10 | 2018-08-16 | Purdue Research Foundation | Silicon carbide power transistor apparatus and method of producing same |
JP2018186140A (ja) * | 2017-04-24 | 2018-11-22 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
US20220181479A1 (en) * | 2020-12-08 | 2022-06-09 | Globalfoundries Singapore Pte. Ltd. | Wide bandgap semiconductor device with a self-aligned channel and integration schemes |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003124208A (ja) * | 2001-10-15 | 2003-04-25 | Denso Corp | SiC半導体装置の製造方法 |
JP2009016530A (ja) * | 2007-07-04 | 2009-01-22 | Mitsubishi Electric Corp | 炭化珪素電界効果型トランジスタ及びその製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3906105B2 (ja) | 2002-03-29 | 2007-04-18 | 株式会社東芝 | 半導体装置 |
JP2006210818A (ja) * | 2005-01-31 | 2006-08-10 | Matsushita Electric Ind Co Ltd | 半導体素子およびその製造方法 |
JP2006216918A (ja) * | 2005-02-07 | 2006-08-17 | Kyoto Univ | 半導体素子の製造方法 |
CA2636776A1 (en) * | 2006-01-30 | 2007-08-02 | Sumitomo Electric Industries, Ltd. | Method of manufacturing silicon carbide semiconductor device |
JP5197474B2 (ja) * | 2009-04-17 | 2013-05-15 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
US8653533B2 (en) | 2009-09-07 | 2014-02-18 | Rohm Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP5524103B2 (ja) | 2011-02-07 | 2014-06-18 | 株式会社東芝 | 半導体装置 |
JP5811969B2 (ja) * | 2012-08-27 | 2015-11-11 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
-
2013
- 2013-03-29 WO PCT/JP2013/059449 patent/WO2014155651A1/ja active Application Filing
- 2013-03-29 US US14/778,058 patent/US10062759B2/en active Active
- 2013-03-29 JP JP2015507858A patent/JP6099733B2/ja active Active
- 2013-03-29 DE DE112013006715.3T patent/DE112013006715B4/de active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003124208A (ja) * | 2001-10-15 | 2003-04-25 | Denso Corp | SiC半導体装置の製造方法 |
JP2009016530A (ja) * | 2007-07-04 | 2009-01-22 | Mitsubishi Electric Corp | 炭化珪素電界効果型トランジスタ及びその製造方法 |
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015050396A (ja) * | 2013-09-03 | 2015-03-16 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2016157736A (ja) * | 2015-02-23 | 2016-09-01 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
JP2017045962A (ja) * | 2015-08-28 | 2017-03-02 | 国立大学法人九州大学 | 不純物導入装置、不純物導入方法、半導体装置の製造方法及び半導体装置 |
JP2017126604A (ja) * | 2016-01-12 | 2017-07-20 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び昇降機 |
JP2017216306A (ja) * | 2016-05-30 | 2017-12-07 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
JP2017216305A (ja) * | 2016-05-30 | 2017-12-07 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
JP2018046246A (ja) * | 2016-09-16 | 2018-03-22 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
US11088272B2 (en) | 2017-01-25 | 2021-08-10 | Rohm Co., Ltd. | Semiconductor device |
US11749749B2 (en) | 2017-01-25 | 2023-09-05 | Rohm Co., Ltd. | Semiconductor device |
JPWO2018139556A1 (ja) * | 2017-01-25 | 2019-11-14 | ローム株式会社 | 半導体装置 |
JP7407252B2 (ja) | 2017-01-25 | 2023-12-28 | ローム株式会社 | 半導体装置 |
JP7144329B2 (ja) | 2017-01-25 | 2022-09-29 | ローム株式会社 | 半導体装置 |
WO2018139556A1 (ja) * | 2017-01-25 | 2018-08-02 | ローム株式会社 | 半導体装置 |
JP2018148029A (ja) * | 2017-03-06 | 2018-09-20 | パナソニックIpマネジメント株式会社 | 半導体エピタキシャルウェハ、半導体素子、および半導体素子の製造方法 |
JP7196458B2 (ja) | 2018-08-13 | 2022-12-27 | 富士電機株式会社 | 絶縁ゲート型半導体装置の製造方法 |
JP2020027894A (ja) * | 2018-08-13 | 2020-02-20 | 富士電機株式会社 | 絶縁ゲート型半導体装置及び絶縁ゲート型半導体装置の製造方法 |
JP2021044355A (ja) * | 2019-09-10 | 2021-03-18 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP7462394B2 (ja) | 2019-09-10 | 2024-04-05 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
JP2021141199A (ja) * | 2020-03-05 | 2021-09-16 | 日立金属株式会社 | SiCウェハおよびその製造方法 |
JP2021180262A (ja) * | 2020-05-14 | 2021-11-18 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
JP7362546B2 (ja) | 2020-05-14 | 2023-10-17 | 株式会社東芝 | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 |
US11901430B2 (en) | 2020-05-14 | 2024-02-13 | Kabushiki Kaisha Toshiba | Semiconductor device, method of manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator |
JP2022030298A (ja) * | 2020-08-06 | 2022-02-18 | 株式会社東芝 | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 |
JP7273764B2 (ja) | 2020-08-06 | 2023-05-15 | 株式会社東芝 | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 |
WO2022130788A1 (ja) * | 2020-12-18 | 2022-06-23 | 国立大学法人京都大学 | SiC半導体素子の製造方法及びSiCMOSFET |
Also Published As
Publication number | Publication date |
---|---|
JP6099733B2 (ja) | 2017-03-22 |
DE112013006715B4 (de) | 2022-10-13 |
DE112013006715T5 (de) | 2015-11-12 |
JPWO2014155651A1 (ja) | 2017-02-16 |
US10062759B2 (en) | 2018-08-28 |
US20160111499A1 (en) | 2016-04-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6099733B2 (ja) | 炭化珪素半導体装置 | |
JP5173582B2 (ja) | 半導体装置 | |
US9117836B2 (en) | Silicon carbide semiconductor device and manufacturing method thereof | |
JP5525940B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP5584823B2 (ja) | 炭化珪素半導体装置 | |
JP2017092368A (ja) | 半導体装置および半導体装置の製造方法 | |
JP6140823B2 (ja) | 炭化珪素半導体装置 | |
JP2016076553A (ja) | 半導体装置およびその製造方法 | |
JP4751308B2 (ja) | 横型接合型電界効果トランジスタ | |
JP4188637B2 (ja) | 半導体装置 | |
JP5638558B2 (ja) | 半導体装置及びその製造方法 | |
US20110193101A1 (en) | Semiconductor device and method for manufacturing semiconductor device | |
KR20080025209A (ko) | 탄화 규소 반도체 장치 및 그 제조 방법 | |
WO2013145022A1 (ja) | 炭化珪素半導体装置の製造方法 | |
JP4842527B2 (ja) | 半導体装置の製造方法 | |
WO2012105170A1 (ja) | 半導体装置およびその製造方法 | |
JP2011060901A (ja) | 半導体装置および半導体装置の製造方法 | |
TWI581424B (zh) | Silicon carbide semiconductor element and manufacturing method thereof | |
WO2014102994A1 (ja) | 炭化珪素半導体装置及びその製造方法 | |
US10147797B2 (en) | Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device | |
JP2016201500A (ja) | 炭化ケイ素mos型半導体装置およびその製造方法 | |
JP6648852B1 (ja) | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 | |
JP2018206872A (ja) | 半導体装置 | |
US11430870B2 (en) | Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device | |
JP5036399B2 (ja) | 炭化珪素半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 13880409 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1120130067153 Country of ref document: DE Ref document number: 112013006715 Country of ref document: DE |
|
ENP | Entry into the national phase |
Ref document number: 2015507858 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14778058 Country of ref document: US |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 13880409 Country of ref document: EP Kind code of ref document: A1 |