JP7144329B2 - 半導体装置 - Google Patents
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- JP7144329B2 JP7144329B2 JP2018564636A JP2018564636A JP7144329B2 JP 7144329 B2 JP7144329 B2 JP 7144329B2 JP 2018564636 A JP2018564636 A JP 2018564636A JP 2018564636 A JP2018564636 A JP 2018564636A JP 7144329 B2 JP7144329 B2 JP 7144329B2
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- 239000004065 semiconductor Substances 0.000 title claims description 350
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
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- 239000010432 diamond Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
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- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
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- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
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Description
不純物領域19は、半導体層2(後述するn-型エピタキシャル層22)との間でpn接合部を形成している。不純物領域19は、平面視において外側に向かって凸状に湾曲した角部19aを有している。
2 半導体層
3 半導体層の第1主面
4 半導体層の第2主面
6 デバイス形成領域
7 外側領域
8 SBD
9 MISFET
11 ソース電極(主面電極)
15 単位セル
21 n+型半導体基板
22 n-型エピタキシャル層
24 n-型ダイオード領域
25 p型ウェル領域
26 n+型ソース領域(第1導電型領域)
27 p+型コンタクト領域
32 ゲート絶縁層
33 ゲート電極層
51 半導体装置
52 半導体装置
60 ライン状セル
61 半導体装置
121 半導体装置
131 半導体装置
141 半導体装置
151 半導体装置
161 半導体装置
L1 単位セルの長さ
L2 単位セルの長さ
SE 半導体層の第1主面の平面面積
SF デバイス形成領域の平面面積
SC 単位セルの平面面積
SD n-型ダイオード領域の平面面積
Claims (20)
- 一方側の第1主面および他方側の第2主面を有する半導体層と、
前記半導体層の前記第1主面の表層部に形成された第1導電型のダイオード領域、前記半導体層の前記第1主面の表層部において前記ダイオード領域の周縁に沿って形成された第2導電型のウェル領域、および、前記ウェル領域の表層部に形成された第1導電型領域を含む単位セルと、
ゲート絶縁層を挟んで前記ウェル領域および前記第1導電型領域と対向し、前記第1導電型領域の上に位置する側壁を有するゲート電極層と、
前記ゲート電極層を被覆する絶縁層と、
前記半導体層の前記第1主面の上において前記ダイオード領域および前記第1導電型領域に電気的に接続された第1主面電極であって、前記ダイオード領域との間でショットキー接合を形成する前記第1主面電極と、を含み、
前記半導体層の前記第1主面は、前記ゲート電極層の側方に位置する領域において前記第1導電型領域の少なくとも一部を露出させるように前記第2主面側に向けて窪んだリセス部を含み、
前記絶縁層は、前記ゲート電極層の前記側壁から前記リセス部に沿って延びるように前記リセス部を被覆する第1部分、および、前記ゲート電極層の前記側壁に沿って延びるように前記ゲート電極層の前記側壁を被覆する第2部分を含み、
前記半導体層の前記第1主面に平行な平行方向に沿う前記第1部分の厚さは、前記平行方向に沿う前記第2部分の厚さよりも大きい、半導体装置。 - 前記ウェル領域は、前記ダイオード領域との間でpn接合部を形成しており、
前記単位セルは、前記ウェル領域および前記ダイオード領域の間に形成された前記pn接合部を含むJBS(Junction Barrier Schottky)構造を有している、請求項1に記載の半導体装置。 - 前記ウェル領域は、平面視において前記ダイオード領域を取り囲んでいる、請求項1または2に記載の半導体装置。
- 前記単位セルは、前記ウェル領域の表層部において前記ダイオード領域および前記第1導電型領域の間の領域に形成され、前記ウェル領域の第2導電型不純物濃度よりも高い第2導電型不純物濃度を有する第2導電型のコンタクト領域を含む、請求項1~3のいずれか一項に記載の半導体装置。
- 前記コンタクト領域は、前記ダイオード領域との間でpn接合部を形成しており、
前記単位セルは、前記コンタクト領域および前記ダイオード領域の間に形成された前記pn接合部を含むJBS(Junction Barrier Schottky)構造を有している、請求項4に記載の半導体装置。 - 前記単位セルが、前記半導体層の前記第1主面の表層部に複数形成されており、
前記ゲート電極層は、各前記単位セルの前記ウェル領域の一部に対向している、請求項1~5のいずれか一項に記載の半導体装置。 - 前記複数の単位セルは、任意の第1方向および前記第1方向に交差する第2方向に沿って間隔を空けて配列されている、請求項6に記載の半導体装置。
- 前記複数の単位セルは、行列状に配列されている、請求項7に記載の半導体装置。
- 前記複数の単位セルは、千鳥状に配列されている、請求項7に記載の半導体装置。
- 前記複数の単位セルは、任意の一方方向に互いに隣接して配列されることにより、一つのライン状セルを形成している、請求項6に記載の半導体装置。
- 前記ライン状セルが、前記一方方向に交差する交差方向に沿って間隔を空けて複数配列されている、請求項10に記載の半導体装置。
- 前記単位セルは、平面視において四角形状に形成されている、請求項1~11のいずれか一項に記載の半導体装置。
- 前記単位セルは、平面視において長方形状に形成されている、請求項1~12のいずれか一項に記載の半導体装置。
- 前記単位セルは、互いに交差する方向に沿って延びる第1辺および第2辺を有し、
前記第1辺の長さに対する前記第2辺の長さの比で定義される前記単位セルのアスペクト比が、1以上4以下である、請求項1~13のいずれか一項に記載の半導体装置。 - 前記単位セルの平面面積に対する前記ダイオード領域の平面面積の比が、0.005以上0.01以下である、請求項1~14のいずれか一項に記載の半導体装置。
- 前記半導体層は、半導体基板、および、前記半導体基板の上に形成されたエピタキシャル層を含み
前記半導体層の前記第1主面は、前記エピタキシャル層により形成されており、
前記半導体層の前記第2主面は、前記半導体基板により形成されている、請求項1~15のいずれか一項に記載の半導体装置。 - 前記エピタキシャル層は、5μm以上の厚さを有している、請求項16に記載の半導体装置。
- 前記エピタキシャル層は、20μm以上の厚さを有している、請求項16または17に記載の半導体装置。
- 前記半導体層には、デバイス形成領域、および、前記デバイス形成領域の外側の領域である外側領域が設定されており、
前記単位セルは、前記デバイス形成領域に形成されており、
前記半導体層の平面面積に対する前記デバイス形成領域の平面面積の比が、70%以上である、請求項1~18のいずれか一項に記載の半導体装置。 - 前記半導体層の前記第2主面を被覆し、前記半導体層との間でオーミック接合を形成する第2主面電極をさらに含む、請求項1~19のいずれか一項に記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2022147350A JP7407252B2 (ja) | 2017-01-25 | 2022-09-15 | 半導体装置 |
JP2023213057A JP2024015449A (ja) | 2017-01-25 | 2023-12-18 | 半導体装置 |
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CN117174755A (zh) * | 2017-01-25 | 2023-12-05 | 罗姆股份有限公司 | 半导体装置 |
JP7379882B2 (ja) * | 2019-06-26 | 2023-11-15 | 富士電機株式会社 | 窒化物半導体装置 |
JP7405550B2 (ja) * | 2019-09-30 | 2023-12-26 | ローム株式会社 | 半導体装置 |
JP7421455B2 (ja) | 2020-09-18 | 2024-01-24 | 株式会社東芝 | 半導体装置 |
JP7472059B2 (ja) | 2021-02-25 | 2024-04-22 | 株式会社東芝 | 半導体装置 |
CN113782614B (zh) * | 2021-11-12 | 2022-02-18 | 南京晟芯半导体有限公司 | 一种凸台栅SiC MOSFET器件及其制造方法 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004047923A (ja) | 2002-05-21 | 2004-02-12 | Fuji Electric Holdings Co Ltd | Mis半導体装置およびその製造方法 |
JP2005285913A (ja) | 2004-03-29 | 2005-10-13 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
JP2007035736A (ja) | 2005-07-25 | 2007-02-08 | Matsushita Electric Ind Co Ltd | 半導体装置および電気機器 |
WO2011033550A1 (ja) | 2009-09-15 | 2011-03-24 | 株式会社 東芝 | 半導体装置 |
WO2011136272A1 (ja) | 2010-04-28 | 2011-11-03 | 日産自動車株式会社 | 半導体装置 |
JP2014127555A (ja) | 2012-12-26 | 2014-07-07 | Toyota Central R&D Labs Inc | 半導体装置 |
WO2014155651A1 (ja) | 2013-03-29 | 2014-10-02 | 株式会社日立製作所 | 炭化珪素半導体装置及びその製造方法 |
WO2014162969A1 (ja) | 2013-04-03 | 2014-10-09 | 三菱電機株式会社 | 半導体装置 |
JP2015162577A (ja) | 2014-02-27 | 2015-09-07 | 住友電気工業株式会社 | ワイドバンドギャップ半導体装置およびその製造方法 |
JP2015173290A (ja) | 2011-02-02 | 2015-10-01 | ローム株式会社 | 半導体装置 |
WO2016130783A1 (en) | 2015-02-11 | 2016-08-18 | Monolith Semiconductor, Inc. | High voltage semiconductor devices and methods of making the devices |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5410170A (en) * | 1993-04-14 | 1995-04-25 | Siliconix Incorporated | DMOS power transistors with reduced number of contacts using integrated body-source connections |
JP2002134744A (ja) | 2000-10-25 | 2002-05-10 | Nec Corp | 横型絶縁ゲート型電界効果トランジスタ及びその駆動方法 |
JP2006019608A (ja) * | 2004-07-05 | 2006-01-19 | Matsushita Electric Ind Co Ltd | Misfetデバイス |
JP2006294990A (ja) * | 2005-04-13 | 2006-10-26 | Rohm Co Ltd | 半導体デバイス |
JP2009194127A (ja) * | 2008-02-14 | 2009-08-27 | Panasonic Corp | 半導体装置およびその製造方法 |
JP2009224603A (ja) * | 2008-03-17 | 2009-10-01 | Toyota Central R&D Labs Inc | ダイオードの製造方法 |
JP5858934B2 (ja) | 2011-02-02 | 2016-02-10 | ローム株式会社 | 半導体パワーデバイスおよびその製造方法 |
US8377756B1 (en) * | 2011-07-26 | 2013-02-19 | General Electric Company | Silicon-carbide MOSFET cell structure and method for forming same |
JP5511019B2 (ja) | 2011-11-04 | 2014-06-04 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5943846B2 (ja) * | 2013-01-18 | 2016-07-05 | 三菱電機株式会社 | 炭化珪素半導体装置及びその製造方法 |
KR102138385B1 (ko) | 2014-03-06 | 2020-07-28 | 매그나칩 반도체 유한회사 | 저 비용의 반도체 소자 제조방법 |
JP6021032B2 (ja) * | 2014-05-28 | 2016-11-02 | パナソニックIpマネジメント株式会社 | 半導体素子およびその製造方法 |
WO2016002057A1 (ja) | 2014-07-03 | 2016-01-07 | 株式会社日立製作所 | 半導体装置、パワーモジュール、電力変換装置、3相モータシステム、自動車、並びに鉄道車両 |
JP2017011609A (ja) | 2015-06-25 | 2017-01-12 | 株式会社デンソー | 半導体集積回路装置 |
CN117174755A (zh) * | 2017-01-25 | 2023-12-05 | 罗姆股份有限公司 | 半导体装置 |
-
2018
- 2018-01-25 CN CN202311158028.3A patent/CN117174755A/zh active Pending
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- 2023-07-17 US US18/353,109 patent/US20230361210A1/en active Pending
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Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004047923A (ja) | 2002-05-21 | 2004-02-12 | Fuji Electric Holdings Co Ltd | Mis半導体装置およびその製造方法 |
JP2005285913A (ja) | 2004-03-29 | 2005-10-13 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
JP2007035736A (ja) | 2005-07-25 | 2007-02-08 | Matsushita Electric Ind Co Ltd | 半導体装置および電気機器 |
WO2011033550A1 (ja) | 2009-09-15 | 2011-03-24 | 株式会社 東芝 | 半導体装置 |
WO2011136272A1 (ja) | 2010-04-28 | 2011-11-03 | 日産自動車株式会社 | 半導体装置 |
JP2015173290A (ja) | 2011-02-02 | 2015-10-01 | ローム株式会社 | 半導体装置 |
JP2014127555A (ja) | 2012-12-26 | 2014-07-07 | Toyota Central R&D Labs Inc | 半導体装置 |
WO2014155651A1 (ja) | 2013-03-29 | 2014-10-02 | 株式会社日立製作所 | 炭化珪素半導体装置及びその製造方法 |
WO2014162969A1 (ja) | 2013-04-03 | 2014-10-09 | 三菱電機株式会社 | 半導体装置 |
JP2015162577A (ja) | 2014-02-27 | 2015-09-07 | 住友電気工業株式会社 | ワイドバンドギャップ半導体装置およびその製造方法 |
WO2016130783A1 (en) | 2015-02-11 | 2016-08-18 | Monolith Semiconductor, Inc. | High voltage semiconductor devices and methods of making the devices |
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JP2024015449A (ja) | 2024-02-01 |
DE112018000517T5 (de) | 2019-10-10 |
JPWO2018139556A1 (ja) | 2019-11-14 |
WO2018139556A1 (ja) | 2018-08-02 |
JP2022168307A (ja) | 2022-11-04 |
US11088272B2 (en) | 2021-08-10 |
JP7407252B2 (ja) | 2023-12-28 |
CN117174755A (zh) | 2023-12-05 |
CN110226234A (zh) | 2019-09-10 |
US20210083094A1 (en) | 2021-03-18 |
US20210336049A1 (en) | 2021-10-28 |
CN110226234B (zh) | 2023-09-22 |
US20230361210A1 (en) | 2023-11-09 |
DE212018000096U1 (de) | 2019-06-13 |
US11749749B2 (en) | 2023-09-05 |
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