WO2014027418A1 - 電子部品および電子部品の製造方法 - Google Patents

電子部品および電子部品の製造方法 Download PDF

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Publication number
WO2014027418A1
WO2014027418A1 PCT/JP2012/070907 JP2012070907W WO2014027418A1 WO 2014027418 A1 WO2014027418 A1 WO 2014027418A1 JP 2012070907 W JP2012070907 W JP 2012070907W WO 2014027418 A1 WO2014027418 A1 WO 2014027418A1
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Prior art keywords
metal film
electronic component
film
metal
bonding
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PCT/JP2012/070907
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English (en)
French (fr)
Inventor
齋藤　隆
龍男 西澤
木下　慶人
典弘 梨子田
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富士電機株式会社
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Application filed by 富士電機株式会社 filed Critical 富士電機株式会社
Priority to CN201280071499.4A priority Critical patent/CN104205301B/zh
Priority to PCT/JP2012/070907 priority patent/WO2014027418A1/ja
Priority to JP2014530426A priority patent/JPWO2014027418A1/ja
Priority to DE112012006812.2T priority patent/DE112012006812T5/de
Publication of WO2014027418A1 publication Critical patent/WO2014027418A1/ja
Priority to US14/482,830 priority patent/US9355987B2/en

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Definitions

  • the present invention relates to an electronic component and a method for manufacturing the electronic component.
  • FIG. 11 is a cross-sectional view showing a main part of a conventional semiconductor device having a package structure. As shown in FIG. 11, the back surface of the semiconductor chip 101 having semiconductor elements is bonded to the circuit pattern 104 on the front surface of the insulating substrate 103 via the solder bonding layer 102.
  • the back surface of the insulating substrate 103 is bonded to the front surface of a metal plate (hereinafter referred to as a Cu plate) 105 made of, for example, copper (Cu).
  • the back surface of the Cu plate 105 is bonded to the front surface of the base member 106 via a solder bonding layer (not shown).
  • a front surface electrode of a semiconductor element (not shown) provided on the front surface of the semiconductor chip 101 is connected to the aluminum wire 107 by thermocompression bonding or ultrasonic vibration, and is electrically connected to the circuit pattern 104 by the aluminum wire 107. It is connected.
  • FIG. 12 is a cross-sectional view showing a main part of another example of a conventional semiconductor device having a package structure.
  • the front surface electrode (not shown) of the semiconductor chip 101 is electrically connected to the circuit pattern 104 by a metal plate 108.
  • the front surface electrode and the circuit pattern 104 are bonded to the metal plate 108 via the solder bonding layer 102, respectively.
  • the configuration of the semiconductor device shown in FIG. 12 other than the metal plate 108 is the same as that of the semiconductor device shown in FIG. 11 and 12, the case and the external electrode terminal are not shown.
  • the front surface electrode of the semiconductor element is made of, for example, aluminum or an aluminum alloy.
  • aluminum has poor wettability with solder and cannot adhere the solder firmly.
  • an under bump metal film having high adhesion between the front surface electrode and the solder between the front surface electrode and the solder bonding layer.
  • an electroless Ni / Au plating film ENIG is generally used as the under bump metal film.
  • the conductive portion formed on the surface of the substrate body is plated, and an electroless Ni film mainly composed of Ni and a substituted Au film mainly composed of Au are sequentially formed.
  • citric acid, glycine, acetic acid, gluconic acid, glutamic acid, tartaric acid, ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid A specific complexing agent selected from malic acid, malonic acid, sulfurous acid, ammonia, and sulfamic acid is used as the Ni removing solution, and the post-treatment is performed by contacting the Ni compound with the Ni removing solution.
  • a method of performing a contact treatment and removing the Ni compound from the substituted Au film has been proposed (for example, see Patent Document 2 below).
  • the following electronic components have been proposed as electronic components manufactured by another method of applying a plating film.
  • a Ni—P film having a two-layer structure is formed on a conductive portion formed on the surface of a ceramic body, and an Au film is further formed on the surface of the Ni—P film.
  • the first layer has a P content of 3 wt% or more and 6 wt% or less
  • the second layer has a P content of more than 6 wt% and 9 wt% or less.
  • the thickness is not less than 0.1 ⁇ m and not more than 1.0 ⁇ m (see, for example, Patent Document 3 below).
  • the following method has been proposed as another method for applying a plating film.
  • a Ni—P film and an Au film are sequentially formed on the Cu electrode formed on the surface of the ceramic body through a pretreatment process, an autocatalytic Ni plating process, and a displacement Au plating process.
  • the ceramic body on which the Au film is formed is used as a material to be dried, and the material to be dried is supplied into a vacuum drying apparatus whose pressure is reduced to at least 13.3 Pa or less. -Remove moisture remaining at the interface between the P film and the Au film.
  • a metal having a smaller ionization tendency than Ni specifically, Ag, Cu, Pd, and Pt, or an alloy thereof can be used (for example, see Patent Document 4 below).
  • connection terminal used was a copper plate plated with Ni and further plated with gold.
  • the Au particle-containing solution having an average particle diameter of 5 nm was added to the semiconductor element. Apply to the emitter electrode (upper side). Further, the surface of the copper wiring pattern formed on the insulating substrate is subjected to Ni plating treatment, and further, Au particles are contained in the Au plating portion of the wiring subjected to Au plating treatment on the portion connected to the emitter electrode of the semiconductor element via the terminal. Apply the solution.
  • the following method has been proposed as another method of applying a plating film and a method of mounting a semiconductor element on a wiring circuit.
  • a nickel-based thin layer is formed on the substrate metal layer of the semiconductor element by an electroless plating method, and the nickel-based thin layer and the wiring circuit are bonded using an anisotropic conductive adhesive.
  • a palladium alloy layer containing 0.1 to 95% by weight of palladium and lead or tin is formed by electroless plating, and bonding is performed using a wiring circuit and an anisotropic conductive adhesive. To do.
  • the anisotropic conductive adhesive contains a gold-based, platinum-based or silver-based fine powder having a particle size of 20 ⁇ m or less and 1 ⁇ m or less having protrusions as a conductive filler, and an epoxy resin mixed as a binder. (For example, refer to Patent Document 6 below.)
  • the following method has been proposed as another method for applying a plating film.
  • a plating film made of Ag or an Ag alloy is applied to a region where the semiconductor element and the lead frame are bonded, and a conductive material including nanoparticles is used as a bonding material in the mount.
  • Adhesive was used.
  • the conductive adhesive a mixture of silver particles having a particle diameter of 1 to 20 ⁇ m and silver particles having a particle diameter of 20 nm or less based on a thermosetting resin such as epoxy is used (see, for example, Patent Document 7 below). ).
  • a step of forming an oxide layer containing oxygen at the bonding interface of the members to be bonded, and a bonding material including a metal compound particle having an average particle size of 1 nm to 50 ⁇ m and a reducing agent made of an organic substance are disposed at the bonding interface.
  • a process and the process of joining a to-be-joined member by heating and pressurizing between to-be-joined members are performed.
  • the joint surface of the member to be joined is subjected to a treatment for precipitating copper, silver or nickel by electroless plating or electroplating before joining and then oxidizing the plated metal surface (for example, Patent Document 8 below). reference.).
  • the bonding portion between the front electrode of the semiconductor element and the bonding layer containing Ag particles needs to be a noble metal such as gold or silver (Ag).
  • a noble metal such as gold or silver (Ag).
  • the front electrode of the semiconductor element is made of, for example, aluminum or an aluminum alloy, it is not possible to directly form (form) a gold plating film or a silver plating film on the surface of the front electrode of the semiconductor element. difficult.
  • a Ni / Au plating film or a Ni / Ag plating film having a structure in which a Ni plating film is sandwiched between a front electrode of a semiconductor element and a gold plating film or a silver plating film is mainly used.
  • an electronic component according to the present invention has the following characteristics.
  • a conductive portion is provided on the surface of the semiconductor element.
  • a first metal film made of a material containing copper as a main component is provided on the surface of the conductive portion.
  • a second metal film is provided on the surface of the first metal film.
  • the second metal film is made of a metal having a smaller ionization tendency than the first metal film.
  • a bonding layer containing silver particles is provided on the surface of the second metal film.
  • the electronic component according to the present invention is characterized in that, in the above-described invention, the semiconductor element is made of silicon or silicon carbide, and the conductive portion is made of a material containing at least copper or aluminum as a main component.
  • the electronic component according to the present invention is characterized in that, in the above-described invention, the second metal film is made of a material mainly composed of silver.
  • the electronic component according to the present invention is characterized in that, in the above-described invention, the first metal film is a plating film or a vapor deposition film.
  • the electronic component according to the present invention is characterized in that, in the above-described invention, the second metal film is a plating film or a vapor deposition film.
  • the bonding layer is formed by being heated at a temperature of 200 ° C. or higher and 350 ° C. or lower and pressurized at a pressure of 0.25 MPa or higher and 30 MPa or lower. It is a sintered body.
  • the electronic component according to the present invention is characterized in that, in the above-described invention, the second metal film does not include nickel precipitates that reduce the bonding strength between the bonding layer and the second metal film.
  • the electronic component manufacturing method has the following characteristics. First, a first metal film made of a material containing copper as a main component is formed on the surface of a conductive portion provided on the surface of a semiconductor wafer. Next, a second metal film is formed on the surface of the first metal film with a material mainly composed of a metal having a smaller ionization tendency than the first metal film. Next, a conductive material containing silver particles is applied to the surface of the second metal film. Next, the conductive material is sintered by heat treatment.
  • the conductive portion is formed of a material mainly containing at least copper or aluminum on a surface of the semiconductor wafer made of silicon or silicon carbide. It is characterized by that.
  • the second metal film is formed of a material containing silver as a main component.
  • the first metal film is formed by a plating method, a sputtering method, or a vapor deposition method.
  • the second metal film is formed by a plating method, a sputtering method, or a vapor deposition method.
  • the method for manufacturing an electronic component according to the present invention includes the step of pressurizing at a pressure of 0.25 MPa to 30 MPa while heating at a temperature of 200 ° C. or higher and 350 ° C. or lower in the heat treatment. It is characterized by sintering a conductive material.
  • nickel that lowers the bonding strength between the bonding layer, which is a sintered body of the conductive material, and the second metal film is used.
  • the second metal film is not precipitated.
  • the outermost surface of the conductive portion has a bonding layer containing silver particles (hereinafter referred to as the following).
  • a second metal film having high adhesion to the Ag bonding layer can be formed.
  • an Ag joining layer can be used.
  • joint strength can be made high.
  • heat resistance can be improved rather than joining a conductive part and a metal plate using solder.
  • the first metal film containing Cu as a main component is formed on the surface of the conductive portion, thereby reducing the bonding strength with the Ag bonding layer in the second metal film. Particles do not precipitate. For this reason, the fall of the joint strength of an electroconductive part and an Ag joining layer can be prevented, and an electroconductive part and a metal plate can be joined firmly via an Ag joining layer.
  • the second metal film containing Ag as a main component on the outermost surface of the conductive portion, for example, even when Ni is contained in the first metal film, the first metal film is formed.
  • the precipitation of Ni particles on the surface layer on the Ag bonding layer side of the metal film 2 can be suppressed. Thereby, it can prevent that the joining strength of an electroconductive part and a 1st Ag joining layer falls.
  • the Ag melting layer has a high melting point (about 960 ° C.) and thermal conductivity (100 W / m ⁇ K or more and 300 W / m or more).
  • An electronic component having characteristics of K or less) and electric resistance (1 ⁇ cm or more and 3 ⁇ cm or less) can be manufactured (manufactured).
  • the first metal film is formed of a material whose main component is Cu, which has a higher thermal conductivity than Ni. Therefore, the first metal film is formed of a material whose main component is Ni. Higher heat dissipation than when formed can be obtained.
  • the electronic component and the electronic component manufacturing method of the present invention it is possible to provide an electronic component with high bonding strength. Moreover, according to the electronic component and the manufacturing method of the electronic component according to the present invention, there is an effect that an electronic component having high heat resistance can be provided. Moreover, according to the electronic component and the manufacturing method of an electronic component concerning this invention, there exists an effect that an electronic component with high heat dissipation can be provided.
  • FIG. 1 is an enlarged cross-sectional view of a main part of an electronic component according to an embodiment.
  • FIG. 2 is a cross-sectional view illustrating the electronic component according to the embodiment.
  • FIG. 3 is a flowchart illustrating the electronic component manufacturing method according to the embodiment.
  • FIG. 4 is a characteristic diagram showing the bonding strength between the silver particle material and each metal simple substance.
  • FIG. 5 is a characteristic diagram showing the bonding strength of the main part of the electronic component according to the embodiment.
  • FIG. 6 is a table in which the bonding strength of the main part of the electronic component corresponding to FIG. 5 is quantified.
  • FIG. 7 is a characteristic diagram showing the components contained in the metal film and the content of the metal film constituting the electronic component according to the embodiment.
  • FIG. 8 is a chart in which the components contained in the metal film and the contents thereof corresponding to FIG. 7 are quantified.
  • FIG. 9 is a characteristic diagram showing the bonding strength of the electronic component according to the embodiment.
  • FIG. 10 is a chart in which the bonding strength of the electronic component corresponding to FIG. 9 is quantified.
  • FIG. 11 is a cross-sectional view showing a main part of a conventional semiconductor device having a package structure.
  • FIG. 12 is a cross-sectional view showing a main part of another example of a conventional semiconductor device having a package structure.
  • FIG. 1 is an enlarged cross-sectional view of a main part of an electronic component according to an embodiment.
  • FIG. 2 is a cross-sectional view illustrating the electronic component according to the embodiment.
  • FIG. 1 shows the vicinity of the junction between the semiconductor chip 20 and the metal plate 5 of FIG. 1 and 2 is a semiconductor device having a package structure on which a semiconductor chip 20 is mounted.
  • the semiconductor chip 20 is made of, for example, silicon (Si) or silicon carbide (SiC). In FIG. 1, the semiconductor silicon portion of the semiconductor chip 20 is not shown.
  • the semiconductor chip 20 constitutes a semiconductor element, and the conductive portion 1 constituting the front surface electrode of the semiconductor element and the like is provided on the front surface of the semiconductor chip 20.
  • the conductive portion 1 is made of, for example, copper (Cu), aluminum (Al), or an alloy thereof.
  • the conductive portion 1 is made of, for example, an aluminum-silicon (Al—Si) alloy or an aluminum-silicon-copper (Al—Si—Cu) alloy.
  • Al—Si aluminum-silicon
  • Al—Si—Cu aluminum-silicon-copper
  • a first metal film 2 and a second metal film 3 are formed (formed) in this order.
  • the first metal film 2 and the second metal film 3 will be described later.
  • One end of a metal plate 5 is bonded to the surface of the second metal film 3 via a bonding layer (hereinafter referred to as a first Ag bonding layer) 4 containing first silver (Ag) particles.
  • the other end of the metal plate 5 is bonded to the circuit pattern 24 on the front surface of the insulating substrate 23 through a bonding layer 21 (hereinafter referred to as a second Ag bonding layer) 21 containing second Ag particles.
  • a gold (Au) or silver (Ag) film is formed on the outermost surface of the metal plate 5 in order to improve the bonding strength with the first and second Ag bonding layers 4 and 21.
  • a back surface electrode (not shown) is provided on the back surface of the semiconductor chip 20.
  • a gold film or a silver film is formed on the outermost surface of the back electrode by, for example, a sputtering process.
  • the back electrode of the semiconductor chip 20 is bonded to the circuit pattern 24 on the front surface of the insulating substrate 23 via a bonding layer (hereinafter referred to as a third Ag bonding layer) 22 containing third Ag particles.
  • a bonding layer hereinafter referred to as a third Ag bonding layer 22 containing third Ag particles.
  • an Au film or an Ag film for improving the bonding strength with the second and third Ag bonding layers 21 and 22 is formed on the outermost surface of the circuit pattern 24.
  • the first to third Ag bonding layers 4, 21, 22 are sintered bodies of a conductive composition (conductive material) containing Ag particles.
  • a conductive composition conductive material
  • the heat resistance can be improved as compared with the case of joining the members with solder.
  • the electronic component 10 that can withstand an operation under a high temperature environment (for example, a continuous operation at 175 ° C.) by bonding the members with the first to third Ag bonding layers 4, 21, and 22. Can be provided.
  • the insulating substrate 23 may be, for example, a DCB substrate in which copper is directly bonded to the front and back surfaces of a ceramic material.
  • the back surface of the insulating substrate 23 is bonded to the front surface of a metal plate (Cu plate) 25 made of, for example, copper.
  • the back surface of the Cu plate 25 is joined to the front surface of the base member 26.
  • the base member 26 is made of a material having high thermal conductivity.
  • the bonding between the Cu plate 25 and the base member 26 may be a bonding by a solder bonding layer or a bonding layer containing Ag particles (Ag bonding layer).
  • an Au film or an Ag film for improving the bonding strength with the Ag bonding layer is formed on the outermost surface of the Cu plate 25.
  • the front surface of the insulating substrate 23 (the surface on the semiconductor chip 20 side) is covered with a resin case (not shown) bonded to the periphery of the insulating substrate 23.
  • the front surface electrode and the back surface electrode of the semiconductor chip 20 are drawn out of the resin case by external electrode terminals (not shown).
  • the inside of the resin case is filled with a sealing material (not shown) such as resin or gel.
  • the first metal film 2 is formed on the surface of the conductive portion 1 before forming the second metal film 3 in order to form the second metal film 3 on the outermost surface of the conductive portion 1.
  • the first metal film 2 is made of a material that has high bonding strength with the conductive portion 1 and that can easily form the second metal film 3 on the surface.
  • the first metal film 2 is made of a material mainly composed of copper (Cu), for example. The reason is that the bonding strength between the second metal film 3 and the metal plate 5 bonded through the first Ag bonding layer 4 can be increased.
  • the first metal film 2 is preferably made of a material that does not contain nickel (Ni). The reason is as follows. In order to join the members with the first to third Ag joining layers 4, 21, 22, it is necessary to perform a high temperature heat treatment at a temperature of about 250 ° C. When nickel is contained in the first metal film 2, nickel particles are deposited on the surface layer on the first Ag bonding layer 4 side in the second metal film 3 by this heat treatment. This is because the nickel precipitates reduce the bonding strength between the second metal film 3 and the metal plate 5.
  • the first metal film 2 is formed by, for example, an electrolytic plating method, an electroless plating method, a sputtering method (physical vapor deposition method), or a chemical vapor deposition method.
  • the second metal film 3 is formed on the outermost surface of the semiconductor chip 20 in order to improve the bonding strength with the first Ag bonding layer 4.
  • the second metal film 3 is made of a material that has high bondability with the first Ag bonding layer 4 and has a smaller ionization tendency than the first metal film 2.
  • the second metal film 3 is made of a material mainly containing silver or gold, for example.
  • the second metal film 3 is made of a material mainly composed of silver. The reason is that the precipitation of nickel into the second metal film 3 can be suppressed more than when the main component of the second metal film 3 is gold.
  • the second metal film 3 is formed by, for example, an electrolytic plating method, an electroless plating method, a sputtering method (physical vapor deposition method), or a chemical vapor deposition method.
  • FIG. 3 is a flowchart illustrating the electronic component manufacturing method according to the embodiment.
  • the case where the first metal film 2 and the second metal film 3 are formed by, for example, electroless plating will be described as an example.
  • an aluminum silicon electrode is formed as the conductive portion 1 on the front surface of the semiconductor wafer by sputtering, for example.
  • the semiconductor wafer 20 is cut out with a desired chip size to produce the semiconductor chip 20.
  • the plating process steps S6 and S7 for forming the first and second metal films 2 and 3
  • the semiconductor chip 20 is subjected to a plating pre-process (steps S1 to S5).
  • the semiconductor chip 20 is degreased (step S1).
  • the particles, organic matter, and oxide film adhering to the surface of the semiconductor chip 20 are removed by etching (step S2).
  • the semiconductor chip 20 may be acid-washed using, for example, nitric acid after the process of step S2, and the insoluble etching residue generated on the surface of the semiconductor chip 20 by the process of step S2 may be removed.
  • a zincate (zinc substitution) process is performed to improve the adhesion between the front surface of the semiconductor chip 20 and the first metal film 2 formed in a later step. (Step S3).
  • step S4 the semiconductor chip 20 is acid cleaned using, for example, nitric acid, and the substituted zinc layer formed on the surface of the semiconductor chip 20 in step S3 is removed (nitric acid stripping, step S4).
  • a zincate process (second zincate process) is performed again to improve the adhesion between the front surface of the semiconductor chip 20 and the first metal film 2, and the pre-plating process is terminated (step S5).
  • a process of washing the surface of the conductive part 1 with water is performed between the processes of steps S1 to S5.
  • a plating process for forming the first metal film 2 and the second metal film 3 is performed. Specifically, for example, electroless Cu plating is performed, and the first metal film 2 is formed on the surface of the conductive portion 1 (step S6). Next, after the semiconductor chip 20 is washed with water, for example, an electroless Ag plating process is performed to form the second metal film 3 on the surface of the first metal film 2 (step S7).
  • the semiconductor chip 20 is mounted on the insulating substrate 23. Specifically, a paste-like conductive composition containing Ag particles to be the third Ag bonding layer 22 is applied in a desired pattern on the surface of the circuit pattern 24 of the insulating substrate 23 (step S8). Next, after placing the semiconductor chip 20 on the surface of the paste-like conductive composition containing Ag particles with the back side down (insulating substrate 23 side), the conductive material containing Ag particles is heated and pressurized. Sinter the composition. Thus, the semiconductor chip 20 is bonded to the surface of the circuit pattern 24 of the insulating substrate 23 via the third Ag bonding layer 22 (step S9).
  • a paste-like conductive composition containing Ag particles to be the first Ag bonding layer 4 is applied in a desired pattern on the surface of the second metal film 3 on the outermost surface of the semiconductor chip 20 (step S10).
  • a paste-like conductive composition containing Ag particles to be the second Ag bonding layer 21 is applied to the surface of the circuit pattern 24 of the insulating substrate 23 in a desired pattern.
  • the conductive composition containing Ag particles is sintered by applying pressure while heating. Thereby, one end of the metal plate 5 is bonded to the surface of the second metal film 3 on the outermost surface of the semiconductor chip 20 via the first Ag bonding layer 4 (step S11). Further, the other end of the metal plate 5 is bonded to the surface of the circuit pattern 24 of the insulating substrate 23 via the second Ag bonding layer 21.
  • the electronic component 10 is completed through the above steps.
  • the heat treatment for sintering the conductive composition containing Ag particles is preferably performed at a pressure of, for example, 0.25 MPa to 30 MPa while being heated at a temperature of 200 ° C. to 350 ° C., for example.
  • the paste-like conductive composition containing Ag particles is sintered, and the first Ag bonding layer 4 having high bonding strength, excellent heat resistance, and heat dissipation can be formed.
  • the conductive portion A second metal film having high adhesion to the first Ag bonding layer can be formed on the outermost surface.
  • a 1st Ag joining layer can be used.
  • joint strength can be made high.
  • the heat resistance can be improved to such an extent that it can withstand an operation under a high temperature environment (for example, a continuous operation at 175 ° C.), for example, rather than joining the conductive portion and the metal plate using solder.
  • the bonding strength with the first Ag bonding layer can be increased in the second metal film. Ni particles to be lowered do not precipitate. Thereby, it can prevent that the joining strength of an electroconductive part and a 1st Ag joining layer falls. For this reason, a conductive part and a metal plate can be firmly joined via a 1st Ag joining layer. Therefore, the reliability evaluated by a P / C (power cycle) test or the like is improved.
  • an electronic component that has been bonded by the first Ag bonding layer is cracked by, for example, a crack in the first Ag bonding layer in the P / C test, and peeling occurs from the cracked portion. To. For this reason, since it becomes difficult to produce a crack in the 1st Ag joining layer by improving the joint strength of a conductive part and the 1st Ag joining layer, the lifetime of an electronic component improves.
  • the first metal film or the second metal film contains Ni. Even if it is, it can suppress that Ni particle
  • the high melting point about 960 ° C.
  • thermal conductivity of the first to third Ag bonding layers an electronic component having characteristics of (100 W / m ⁇ K or more and 300 W / m ⁇ K or less) and electric resistance (1 ⁇ cm or more and 3 ⁇ cm or less) can be manufactured (manufactured). Thereby, an electronic component having high heat resistance and high heat dissipation can be manufactured.
  • the first metal film is formed of a material whose main component is Cu, which has a higher thermal conductivity than Ni. Therefore, the first metal film is formed of a material whose main component is Ni. Higher heat dissipation than when formed can be obtained.
  • FIG. 4 is a characteristic diagram showing the bonding strength between the silver particle material and each metal simple substance.
  • a semiconductor chip cut out to a chip size of 10 mm ⁇ 10 mm was manufactured.
  • a paste-like conductive composition (Ag particle material) containing Ag particles was applied onto the metal layer of the semiconductor chip.
  • the conductive composition was sintered by heating while heating at a temperature of 250 ° C. for 5 minutes to form an Ag bonding layer on the metal layer.
  • a plurality of samples were prepared by variously changing the amount of pressure applied when the conductive composition was heated, and a shear strength test was performed in which the bonding strength between the metal layer and the Ag bonding layer in each sample was evaluated by a shearing force.
  • the shear strength test was performed on each sample in which the metal layer on the surface of the silicon wafer was formed of Ag, Au, Cu, and Ni alone.
  • the measurement result by the shear strength test of the joint strength between each metal layer and the Ag joint layer is shown in FIG. From the results shown in FIG. 4, it was confirmed that the bonding strength with the Ag bonding layer increases as the amount of pressurization increases for each metal. It was also confirmed that the bonding strength with the Ag bonding layer was different depending on the type of metal. Specifically, the bonding strength with the Ag bonding layer is highest for Ag, and then decreases in the order of Au, Cu, and Ni. Thereby, it was confirmed that the bonding strength with the Ag bonding layer is higher in Cu than in Ni.
  • FIG. 5 is a characteristic diagram showing the bonding strength of the main part of the electronic component according to the embodiment.
  • FIG. 6 is a table in which the bonding strength of the main part of the electronic component corresponding to FIG. 5 is quantified.
  • a Cu plating film is formed as a first metal film 2 with a thickness of 5 ⁇ m
  • an Ag plating film as a second metal film 3 is formed with a thickness of 0.1 ⁇ m.
  • a semiconductor chip 20 in which the metal plate 5 was bonded via the first Ag bonding layer 4 was produced (hereinafter referred to as Example 2).
  • Example 2 was produced as follows. First, as a semiconductor chip 20, an aluminum silicon (AlSi) electrode serving as a conductive portion 1 is formed on one main surface of a 6-inch silicon wafer by sputtering to a thickness of 5 ⁇ m, and then cut into a chip size of 10 mm ⁇ 10 mm. It was. Next, after performing the plating pretreatment, a Cu plating film to be the first metal film 2 was formed to a thickness of 5 ⁇ m on the conductive portion 1 by electroless Cu plating treatment. Subsequently, an Ag plating film to be the second metal film 3 was formed to a thickness of 0.1 ⁇ m on the first metal film 2 by electroless Ag plating.
  • AlSi aluminum silicon
  • a paste-like conductive composition (Ag particle material) containing Ag particles was applied onto the second metal film 3.
  • the conductive composition was applied to a region having the same area as the opening of the metal mask on the surface of the second metal film 3 using a metal mask having a thickness of 100 ⁇ m having an opening of 8 mm ⁇ 8 mm.
  • the Ag-plated metal plate 5 is placed on the Ag particle material, and the conductive composition is sintered by applying pressure while heating at a temperature of 250 ° C. for 5 minutes. 1 Ag bonding layer 4 was formed.
  • Comparative Examples 1 and 2 in which the configurations of the first and second metal films 2 and 3 are different from those in Example 2 were produced.
  • a Ni plating film was formed as a first metal film with a thickness of 5 ⁇ m
  • a Ni plating film was formed as a first metal film with a thickness of 5 ⁇ m
  • the configurations other than the first and second metal films of Comparative Examples 1 and 2 are the same as in Example 2.
  • the manufacturing methods of Comparative Examples 1 and 2 are the same as the manufacturing method of Example 2 except for the material and thickness of the plating film formed by plating.
  • Example 2 a plurality of samples were prepared by variously changing the amount of pressure applied when the conductive composition was heated, and the results of shear strength tests are shown in FIGS. Shown in The shear strength test is a strength test in which the joint strength between the conductive portion 1 and the metal plate 5 is evaluated by a shearing force.
  • Example 2 and Comparative Example 2 had higher bonding strength than Comparative Example 1.
  • the bonding strength between the conductive portion 1 and the metal plate 5 is 60.1 MPa in Example 2 and Comparative Example 2, respectively.
  • the pressure was 42.5 MPa. That is, the bonding strength between the conductive portion 1 and the metal plate 5 is substantially the same in Example 2 and Comparative Example 2 in which the second metal film is an Ag plating film, and in Comparative Example in which the second metal film is an Au plating film. It was confirmed that it was higher than 1.
  • Example 3 the bonding strength of the electronic component 10 was verified. Specifically, in order to manufacture the electronic component 10 as a product, as shown in the embodiment, before the metal plate 5 is bonded to the conductive portion 1 on the surface of the semiconductor chip 20, the circuit pattern 24 of the insulating substrate 23. The semiconductor chip 20 is bonded to the substrate. Therefore, the effect of the step of bonding the semiconductor chip 20 to the circuit pattern 24 of the insulating substrate 23 on the bonding strength between the conductive portion 1 on the surface of the semiconductor chip 20 and the metal plate 5 was verified. First, the amount of Ni deposited in the second metal film 3 was measured.
  • FIG. 7 is a characteristic diagram showing the components contained in the metal film constituting the electronic component according to the embodiment and the content thereof.
  • FIG. 8 is a chart in which the components contained in the metal film and the contents thereof corresponding to FIG. 7 are quantified.
  • “before heating” indicates a case where the process of bonding the semiconductor chip 20 to the circuit pattern 24 of the insulating substrate 23 is not performed. That is, before heating is Example 2 and Comparative Examples 1 and 2.
  • “After heating” means a case where the semiconductor chip 20 is bonded to the circuit pattern 24 of the insulating substrate 23 to produce the electronic component 10 according to the embodiment (hereinafter referred to as Example 3) (FIG. 9, FIG. 9). The same applies to 10).
  • the configuration other than the insulating substrate 23 and the third Ag bonding layer 22 in Example 3 is the same as that in Example 2.
  • Example 3 was produced as follows. First, similarly to Example 2, a semiconductor chip 20 on which an AlSi electrode to be a conductive portion 1 was formed was prepared, and a Cu plating film and an Ag plating film to be first and second metal films 2 and 3 on the conductive portion 1. Were sequentially formed. Next, a paste-like conductive composition (Ag particle material) containing Ag particles was applied onto the circuit pattern 24 of the insulating substrate 23. At this time, the conductive composition was applied to a region having the same area as the opening of the metal mask on the surface of the circuit pattern 24 of the insulating substrate 23 using a metal mask having an opening that is larger than the chip size.
  • a paste-like conductive composition Ag particle material
  • Example 2 the semiconductor chip 20 is placed on the Ag particle material with the back surface being the insulating substrate 23 side, and the conductive composition is sintered by pressing at a pressure of 10 MPa while heating at a temperature of 250 ° C. for 5 minutes.
  • a third Ag bonding layer 22 was formed on the 23 circuit patterns 24.
  • the semiconductor chip 20 is bonded onto the circuit pattern 24 of the insulating substrate 23 via the third Ag bonding layer 22.
  • the first Ag bonding layer 4 is formed on the second metal film 3 of the semiconductor chip 20, and the conductive portion 1 and the metal plate 5 are interposed via the first Ag bonding layer 4.
  • Example 3 is completed.
  • the amount of pressurization in the high-temperature heat treatment for sintering the first Ag bonding layer 4 was 10 MPa.
  • Comparative Examples 3 and 4 In comparison after heating, Comparative Examples 3 and 4 in which the configurations of the first and second metal films 2 and 3 were different from those in Example 3 were produced.
  • the configuration other than the insulating substrate and the third Ag bonding layer of Comparative Example 3 is the same as that of Comparative Example 1.
  • the configuration other than the insulating substrate and the third Ag bonding layer of Comparative Example 4 is the same as that of Comparative Example 2.
  • the results of measuring the amount of Ni deposited in the second metal film are shown in FIGS. 7 and 8 show the average content (%) of each component at any number of locations on the surface layer of the second metal film on the first Ag bonding layer side.
  • FIG. 9 is a characteristic diagram showing the bonding strength of the electronic component according to the embodiment.
  • FIG. 10 is a chart in which the bonding strength of the electronic component corresponding to FIG. 9 is quantified.
  • the results of measuring the bonding strength of Example 3 and Comparative Examples 3 and 4 are shown in FIGS. 9 and 10, the bonding strengths of Example 2 and Comparative Examples 1 and 2 are the bonding strengths when the pressurization amount is 10 MPa as shown in FIGS.
  • the formation of the first metal film 2 containing Cu as a main component prevents the bonding strength of the electronic component 10 from decreasing even before and after heating. Confirmed that you can.
  • the first metal film 2 containing Cu as a main component the second metal film 3 and the first Ag bonding layer are formed as compared with the case where the first metal film 2 containing Ni as a main component is formed. 4 was confirmed to be improved.
  • the second metal film 3 containing Ag as a main component it was confirmed that by forming the second metal film 3 containing Ag as a main component, the precipitation of Ni after heating can be suppressed when Ni is precipitated in the second metal film 3. It was.
  • the present invention the case where the front electrode and the metal plate of the semiconductor element are joined has been described as an example.
  • the present invention is not limited thereto, and other conductive parts and the conductive parts are electrically connected to other members.
  • the present invention can also be applied when joining a metal plate for connection.
  • the electronic component and the method for manufacturing the electronic component according to the present invention are useful for a semiconductor device having a package structure such as an electronic component having a configuration in which respective members are joined and electrically connected.

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Abstract

　半導体素子のおもて面電極となる導電部（１）の表面には、銅を主成分とする第１の金属膜（２）が成膜されている。第１の金属膜（２）の表面には、銀を主成分とする第２の金属膜（３）が成膜されている。第２の金属膜（３）の表面には、銀粒子を含有する接合層（４）を介して、導電部（１）と他部材（例えば絶縁基板（２３）の回路パターン（２４））とを電気的に接続する金属板（５）が接合されている。第２の金属膜（３）には、第２の金属膜（３）と銀粒子を含有する接合層（４）との接合強度を低下させるニッケルが含まれていない。これにより、高い接合強度および優れた耐熱性、放熱性を有する電子部品（１０）および電子部品（１０）の製造方法を提供することができる。

Description

電子部品および電子部品の製造方法
　この発明は、電子部品および電子部品の製造方法に関する。
　従来、絶縁基板に設けられた回路パターン上に半導体素子が接合されたパッケージ構造を有する半導体装置が提案されている。半導体素子のおもて面に設けられた電極（以下、おもて面電極とする）を絶縁基板の回路パターンに接合する方法として、アルミニウム（Ａｌ）ワイヤやはんだを用いて接合する方法が公知である。図１１は、従来のパッケージ構造の半導体装置の要部を示す断面図である。図１１に示すように、半導体素子を有する半導体チップ１０１の裏面は、はんだ接合層１０２を介して絶縁基板１０３のおもて面の回路パターン１０４に接合されている。
　絶縁基板１０３の裏面は、例えば銅（Ｃｕ）からなる金属板（以下、Ｃｕ板とする）１０５のおもて面に接合されている。Ｃｕ板１０５の裏面は、はんだ接合層（不図示）を介してベース部材１０６のおもて面に接合されている。半導体チップ１０１のおもて面に設けられた図示しない半導体素子のおもて面電極は、熱圧着あるいは、超音波振動によってアルミニウムワイヤ１０７に接続され、アルミニウムワイヤ１０７により回路パターン１０４と電気的に接続されている。
　図１２は、従来のパッケージ構造の半導体装置の別の一例の要部を示す断面図である。図１２に示すように、半導体チップ１０１の図示しないおもて面電極は、金属板１０８により、回路パターン１０４に電気的に接続されている。おもて面電極および回路パターン１０４は、それぞれ、はんだ接合層１０２を介して金属板１０８に接合されている。図１２に示す半導体装置の金属板１０８以外の構成は、図１１に示す半導体装置と同様である。また、図１１，１２では、ケースおよび外部電極用端子は図示を省略する。
　半導体素子のおもて面電極は、例えば、アルミニウムまたはアルミニウム合金からなる。しかし、アルミニウムは、はんだとの濡れ性が悪く、かつはんだを強固に密着させることができない。このため、おもて面電極とはんだ接合層との間に、おもて面電極およびはんだとの密着性の高いアンダーバンプメタル膜を形成する必要がある。アンダーバンプメタル膜としては、一般的に、無電解Ｎｉ／Ａｕめっき膜（ＥＮＩＧ）が使用される。半導体素子のおもて面電極表面に、Ｎｉ／Ａｕめっき膜を施すことにより、おもて面電極への強固なはんだ接合が可能となる。
　このようなめっき膜を施す方法として、被めっき材を、金イオンを除去した無電解金めっき液に接触させる工程、および金イオンを含む無電解金めっき液に接触させる工程を連続して行う方法が提案されている（例えば、下記特許文献１参照。）。
　また、めっき膜を施す別の方法として、基板素体の表面に形成された導電部にめっき処理を施し、Ｎｉを主成分とする無電解Ｎｉ皮膜およびＡｕを主成分とする置換Ａｕ皮膜を順次形成し、その後、置換Ａｕ皮膜に付着しているＮｉ化合物を除去する後処理を行う電子部品のめっき方法において、クエン酸、グリシン、酢酸、グルコン酸、グルタミン酸、酒石酸、エチレンジアミン四酢酸、ジエチレントリアミン五酢酸、りんご酸、マロン酸、亜硫酸、アンモニア、およびスルファミン酸の中から選択された特定の錯化剤をＮｉ除去液として使用し、前記後処理は、前記Ｎｉ化合物を前記Ｎｉ除去液と接触させて接触処理を施し、前記Ｎｉ化合物を前記置換Ａｕ皮膜上から除去する方法が提案されている（例えば、下記特許文献２参照。）。
　また、めっき膜を施す別の方法で製造された電子部品として、次の電子部品が提案されている。電子部品は、セラミック素体の表面に形成された導電部上に２層構造のＮｉ－Ｐ皮膜が形成され、さらに該Ｎｉ－Ｐ皮膜の表面にＡｕ皮膜が形成されている。そして、Ｎｉ－Ｐ皮膜のうち、第１層は、Ｐ含有率が３重量％以上６重量％以下であり、第２層は、Ｐ含有率が６重量％を超えかつ９重量％以下であって、その厚みは、０．１μｍ以上１．０μｍ以下である（例えば、下記特許文献３参照。）。
　また、めっき膜を施す別の方法として、次の方法が提案されている。めっき膜を施すにあたって、前処理工程、自己触媒Ｎｉめっき工程、置換Ａｕめっき工程を経て、セラミック素体の表面に形成されたＣｕ電極上にＮｉ－Ｐ皮膜およびＡｕ皮膜を順次形成する。そして、後処理工程では、Ａｕ皮膜の形成されたセラミック素体を被乾燥物とし、少なくとも１３．３Ｐａ以下に減圧された真空乾燥装置内に被乾燥物を供給し、真空乾燥処理を施し、Ｎｉ－Ｐ皮膜とＡｕ皮膜との界面に残存している水分を除去する。Ａｕ皮膜に代えて、Ｎｉよりもイオン化傾向が小さい金属、具体的には、Ａｇ、Ｃｕ、Ｐｄ、およびＰｔ、またはこれらの合金を使用することができる（例えば、下記特許文献４参照。）。
　また、めっき膜を施す別の方法として、次の方法が提案されている。接続用端子は銅板にＮｉめっきを施しさらにその表面に金めっきを行ったものを使用し、絶縁基板の配線上に半導体素子を搭載した後、平均粒径５ｎｍのＡｕ粒子含有溶液を半導体素子のエミッタ電極（上側）に塗布する。さらに、絶縁基板上に形成した銅配線パターンの表面にＮｉめっき処理を行い、さらに半導体素子のエミッタ電極と端子を介して接続する部分にＡｕめっき処理を行った配線のＡｕめっき部分にＡｕ粒子含有溶液を塗布する。これら半導体素子と絶縁基板上配線に塗布したＡｕ含有溶液を乾燥し金粒子からなる電極部分を形成した後、接続用端子をこの金粒子からなる電極上部に搭載し８０℃程度の熱を６０分間加えることにより半導体素子と配線とを接続する（例えば、下記特許文献５参照。）。
　また、めっき膜を施す別の方法と、半導体素子を配線回路にマウントする方法として、次の方法が提案されている。半導体素子の基板金属層上に無電解めっき法でニッケル系薄層を形成し、このニッケル系薄層と配線回路とを、異方性導電性接着剤を用いて接合する。または、ニッケル系薄層を形成後、無電解めっき法でパラジウム０．１～９５重量%と鉛もしくは錫を含有するパラジウム合金層を形成し、配線回路と異方性導電接着剤を用いて接合する。異方性導電性接着剤は、導電フィラーとして突起を有する粒径２０μm以下と１μm以下の金系、白金系又は銀系微粉末を含有し、バインダーとしてエポキシ系樹脂が混合されているものを用いた（例えば、下記特許文献６参照。）。
　また、めっき膜を施す別の方法として、次の方法が提案されている。半導体素子のリードフレームへのマウントをする際に、半導体素子およびリードフレームの接合される領域については、Ａｇ、もしくはＡｇ合金によるめっき膜を施し、なおかつ、マウントにおける接合材料としてはナノ粒子を含む導電性接着剤を用いた。導電性接着剤は、エポキシなどの熱硬化性樹脂をベースに、粒径が１～２０μｍの銀粒子と２０ｎｍ以下の銀粒子とが混合されたものを用いた（例えば、下記特許文献７参照。）。
　また、めっき膜を施す別の方法として、次の方法が提案されている。被接合部材の接合界面に酸素を含む酸化物層を形成する工程と、接合界面に、平均粒径が１ｎｍ以上５０μｍ以下の金属化合物粒子と有機物からなる還元剤とを含む接合用材料を配置する工程と、被接合部材間を加熱、加圧することにより被接合部材を接合する工程とを行う。前記被接合部材の接合面にはあらかじめ接合前に無電解めっきまたは電気めっきにより銅、銀またはニッケルを析出させた後、めっき金属表面を酸化させる処理が施されている（例えば、下記特許文献８参照。）。
　また、近年では、半導体素子のおもて面電極を絶縁基板の回路パターンに接合する別の方法として、はんだ接合に代えて、銀（Ａｇ）粒子を含む接合層を用いて接合する方法も提案されている。銀粒子を含む接合層を用いた接合方法として、銀ナノ粒子接合材等の有機物で表面が被覆された金属粒子を接合材として用い、無電解めっきまたは電気めっきにより形成された金属表面どうしを接合することで高い耐熱性と信頼性および高放熱性を有する接合を可能にし、これにより、実装プロセス中の接合過程において接合温度の低温化を達成する方法が提案されている（例えば、下記特許文献８参照。）。
　Ａｇ粒子を含む接合層を用いた接合では、半導体素子のおもて面電極とＡｇ粒子を含む接合層との接合部が、金や銀（Ａｇ）など貴金属である必要がある。上述したように半導体素子のおもて面電極は例えばアルミニウムまたはアルミニウム合金からなるため、半導体素子のおもて面電極の表面に金めっき膜や銀めっき膜を直接成膜（形成）することは難しい。このため、半導体素子のおもて面電極と金めっき膜や銀めっき膜との間にＮｉめっき膜を挟んだ構成のＮｉ／Ａｕめっき膜やＮｉ／Ａｇめっき膜が主に用いられている。
特許第３４８４３６７号公報 特許第４０９６６７１号公報 特開２００６－１３１９４９号公報 特開２００４－１１５９０２号公報 特開２００５－１３６３７５号公報 特開平７－２６３４９３号公報 特開２００７－１８００５９号公報 特開２００８－２０８４４２号公報
　しかしながら、本発明者らが鋭意研究を重ねた結果、次の問題が生じることが新たに判明した。アルミニウムワイヤやはんだを用いた接合では、耐熱性が低く、また、導電性接着剤を用いた接合では、バインダーとして使用されるエポキシ系樹脂の耐熱性が低く、また、熱伝導率も低いため、近年要求される高温度環境下での動作（例えば１７５℃での連続動作など）に耐え得る電子部品を提供することができない。さらに、導電性接着材を用いた接合では、導電フィラーとしてＡｇを使用しているが、接合は、バインダーとしているエポキシ系樹脂により接着している。そのため、Ａｇ粒子を含む導電性組成物を用いた接合とは、その接着メカニズムが異なり、接合する対象物に求められる性質が大きく異なる。一方、Ａｇ粒子を含む接合層を用いた接合では、高温環境下における耐熱性を得ることはできる。しかしながら、Ａｇ粒子を含む接合層を用いた接合では、半導体素子のおもて面電極の最表面のめっき金属との接合強度がめっき金属の種類や膜厚に大きく依存するため、強固な接合強度を得るための接合条件の検討が必要となる。
　この発明は、上述した従来技術による問題点を解消するため、接合強度が高い電子部品および電子部品の製造方法を提供することを目的とする。また、この発明は、耐熱性が高い電子部品および電子部品の製造方法を提供することを目的とする。また、この発明は、放熱性が高い電子部品および電子部品の製造方法を提供することを目的とする。
　また、上述した課題を解決し、本発明の目的を達成するため、この発明にかかる電子部品は、次の特徴を有する。半導体素子の表面には、導電部が設けられている。前記導電部の表面には、銅を主成分とする材料からなる第１の金属膜が設けられている。前記第１の金属膜の表面には、第２の金属膜が設けられている。また、第２の金属膜は、前記第１の金属膜よりもイオン化傾向が小さい金属からなる。前記第２の金属膜の表面には、銀粒子を含有する接合層が設けられている。
　また、この発明にかかる電子部品は、上述した発明において、前記半導体素子は、シリコンまたは炭化シリコンからなり、前記導電部は、少なくとも銅またはアルミニウムを主成分とする材料からなることを特徴とする。
　また、この発明にかかる電子部品は、上述した発明において、前記第２の金属膜は、銀を主成分とする材料からなることを特徴とする。
　また、この発明にかかる電子部品は、上述した発明において、前記第１の金属膜は、めっき膜または蒸着膜であることを特徴とする。
　また、この発明にかかる電子部品は、上述した発明において、前記第２の金属膜は、めっき膜または蒸着膜であることを特徴とする。
　また、この発明にかかる電子部品は、上述した発明において、前記接合層は、２００℃以上３５０℃以下の温度で加熱されるとともに、０．２５ＭＰａ以上３０ＭＰａ以下の圧力で加圧されて形成された焼結体であることを特徴とする。
　また、この発明にかかる電子部品は、上述した発明において、前記接合層と前記第２の金属膜との接合強度を低下させるニッケルの析出物を前記第２の金属膜内に含まないことを特徴とする。
　また、上述した課題を解決し、本発明の目的を達成するため、この発明にかかる電子部品の製造方法は、次の特徴を有する。まず、半導体ウエハの表面に設けられた導電部の表面に、銅を主成分とする材料からなる第１の金属膜を形成する。次に、前記第１の金属膜の表面に、前記第１の金属膜よりもイオン化傾向が小さい金属を主成分とする材料で第２の金属膜を形成する。次に、前記第２の金属膜の表面に、銀粒子を含有する導電性材料を塗布する。次に、熱処理によって前記導電性材料を焼結する。
　また、この発明にかかる電子部品の製造方法は、上述した発明において、前記導電部は、シリコンまたは炭化シリコンからなる前記半導体ウエハの表面に、少なくとも銅またはアルミニウムを主成分とする材料で形成されることを特徴とする。
　また、この発明にかかる電子部品の製造方法は、上述した発明において、前記第２の金属膜は、銀を主成分とする材料で形成されることを特徴とする。
　また、この発明にかかる電子部品の製造方法は、上述した発明において、前記第１の金属膜は、めっき法、スパッタリング法または蒸着法によって形成されることを特徴とする。
　また、この発明にかかる電子部品の製造方法は、上述した発明において、前記第２の金属膜は、めっき法、スパッタリング法または蒸着法によって形成されることを特徴とする。
　また、この発明にかかる電子部品の製造方法は、上述した発明において、前記熱処理において、２００℃以上３５０℃以下の温度で加熱しながら、０．２５ＭＰａ以上３０ＭＰａ以下の圧力で加圧することによって、前記導電性材料を焼結することを特徴とする。
　また、この発明にかかる電子部品の製造方法は、上述した発明において、前記熱処理において、前記導電性材料の焼結体である接合層と前記第２の金属膜との接合強度を低下させるニッケルが、前記第２の金属膜内に析出しないことを特徴とする。
　上述した発明によれば、導電部の表面に銅（Ｃｕ）を主成分とする第１の金属膜を成膜することにより、導電部の最表面に、銀粒子を含有する接合層（以下、Ａｇ接合層とする）との密着性の高い第２の金属膜を形成することができる。このため、導電部の最表面の第２の金属膜と、導電部を他部材に電気的に接続するための金属板とを接合する際に、Ａｇ接合層を用いることができる。これにより、第２の金属膜と金属板との接合にはんだ接合層を用いる場合に比べて接合強度を高くすることができる。また、はんだを用いて導電部と金属板とを接合するよりも耐熱性を向上させることができる。
　また、上述した発明によれば、導電部の表面にＣｕを主成分とする第１の金属膜を成膜することにより、第２の金属膜内にＡｇ接合層との接合強度を低下させるＮｉ粒子が析出しない。このため、導電部とＡｇ接合層との接合強度の低下を防止することができ、Ａｇ接合層を介して導電部と金属板とを強固に接合することができる。
　また、上述した発明によれば、導電部の最表面にＡｇを主成分とする第２の金属膜を成膜することにより、例えば第１の金属膜にＮｉが含まれている場合でも、第２の金属膜のＡｇ接合層側の表面層にＮｉ粒子が析出することを抑制することができる。これにより、導電部と第１のＡｇ接合層との接合強度が低下することを防止することができる。
　また、上述した発明によれば、Ａｇ接合層を用いて各部材を接合することにより、Ａｇ接合層のもつ高い融点（約９６０℃程度）、熱伝導度（１００Ｗ／ｍ・Ｋ以上３００Ｗ／ｍ・Ｋ以下）、および電気抵抗（１μΩｃｍ以上３μΩｃｍ以下）という特性を備えた電子部品を作製（製造）することができる。また、上述した発明によれば、Ｎｉよりも熱伝導率が高いＣｕを主成分とする材料で第１の金属膜が形成されるため、Ｎｉを主成分とする材料で第１の金属膜を形成する場合よりも高い放熱性を得ることができる。
　本発明にかかる電子部品および電子部品の製造方法によれば、接合強度が高い電子部品を提供することができるという効果を奏する。また、本発明にかかる電子部品および電子部品の製造方法によれば、耐熱性が高い電子部品を提供することができるという効果を奏する。また、本発明にかかる電子部品および電子部品の製造方法によれば、放熱性が高い電子部品を提供することができるという効果を奏する。
図１は、実施の形態にかかる電子部品の要部を拡大して示す断面図である。 図２は、実施の形態にかかる電子部品を示す断面図である。 図３は、実施の形態にかかる電子部品の製造方法について示すフローチャートである。 図４は、銀粒子材と各金属単体との接合強度を示す特性図である。 図５は、実施の形態にかかる電子部品の要部の接合強度について示す特性図である。 図６は、図５に対応する電子部品の要部の接合強度を数値化した図表である。 図７は、実施の形態にかかる電子部品を構成する金属膜の含有成分およびその含有率を示す特性図である。 図８は、図７に対応する金属膜の含有成分およびその含有率を数値化した図表である。 図９は、実施の形態にかかる電子部品の接合強度について示す特性図である。 図１０は、図９に対応する電子部品の接合強度を数値化した図表である。 図１１は、従来のパッケージ構造の半導体装置の要部を示す断面図である。 図１２は、従来のパッケージ構造の半導体装置の別の一例の要部を示す断面図である。
　以下に添付図面を参照して、この発明にかかる電子部品および電子部品の製造方法の好適な実施の形態を詳細に説明する。なお、以下の実施の形態の説明および添付図面において、同様の構成には同一の符号を付し、重複する説明を省略する。
（実施の形態）
　実施の形態にかかる電子部品の構成について説明する。図１は、実施の形態にかかる電子部品の要部を拡大して示す断面図である。図２は、実施の形態にかかる電子部品を示す断面図である。図１には、図２の半導体チップ２０と金属板５との接合部近傍を示す。図１，２に示す実施の形態にかかる電子部品１０は、半導体チップ２０を実装したパッケージ構造の半導体装置である。半導体チップ２０は例えばシリコン（Ｓｉ）や炭化シリコン（ＳｉＣ）などからなる。図１において半導体チップ２０の半導体シリコン部は図示省略する。
　半導体チップ２０は半導体素子を構成し、半導体チップ２０のおもて面には半導体素子のおもて面電極などを構成する導電部１が設けられている。導電部１は、例えば銅（Ｃｕ）やアルミニウム（Ａｌ）またはそれらの合金からなる。具体的には、導電部１は、例えば、アルミニウム－シリコン（Ａｌ－Ｓｉ）合金またはアルミニウム－シリコン－銅（Ａｌ－Ｓｉ－Ｃｕ）合金からなる。導電部１にＳｉが含まれることによりアルミスパイクが抑制され、導電部１にＣｕが含まれることによりエレクトロマイグレーションが抑制される。
　導電部１の表面には、第１の金属膜２および第２の金属膜３がこの順に成膜（形成）されている。第１の金属膜２および第２の金属膜３については後述する。第２の金属膜３の表面には、第１の銀（Ａｇ）粒子を含有する接合層（以下、第１のＡｇ接合層とする）４を介して金属板５の一端が接合されている。金属板５の他端は、第２のＡｇ粒子を含有する接合層（以下、第２のＡｇ接合層とする）２１を介して絶縁基板２３のおもて面の回路パターン２４に接合されている。金属板５の最表面には、第１，第２のＡｇ接合層４，２１との接合強度を向上させるために例えば金（Ａｕ）または銀（Ａｇ）膜が成膜されている。
　半導体チップ２０の裏面には、図示しない裏面電極が設けられている。裏面電極の最表面には、例えばスパッタリング処理により金膜または銀膜が成膜されている。半導体チップ２０の裏面電極は、第３のＡｇ粒子を含有する接合層（以下、第３のＡｇ接合層とする）２２を介して絶縁基板２３のおもて面の回路パターン２４に接合されている。回路パターン２４の最表面には、第２，３のＡｇ接合層２１，２２との接合強度を向上させるための例えばＡｕ膜またはＡｇ膜が成膜されている。
　第１～３のＡｇ接合層４，２１，２２とは、Ａｇ粒子を含有する導電性組成物（導電性材料）の焼結体である。第１～３のＡｇ接合層４，２１，２２により各部材を接合することにより、はんだにより各部材を接合する場合に比べて耐熱性を向上させることができる。具体的には、第１～３のＡｇ接合層４，２１，２２により各部材を接合することにより、高温度環境下での動作（例えば１７５℃での連続動作など）に耐え得る電子部品１０を提供することができる。
　絶縁基板２３は、例えばセラミックス材料の表裏面に直接銅が接合されたＤＣＢ基板であってもよい。絶縁基板２３の裏面は、例えば銅からなる金属板（Ｃｕ板）２５のおもて面に接合されている。Ｃｕ板２５の裏面は、ベース部材２６のおもて面に接合されている。ベース部材２６は、熱伝導率の高い材料からなる。Ｃｕ板２５とベース部材２６との接合は、はんだ接合層による接合であってもよいし、Ａｇ粒子を含有する接合層（Ａｇ接合層）による接合であってもよい。
　Ｃｕ板２５とベース部材２６とをＡｇ接合層を介して接合する場合、Ｃｕ板２５の最表面に、Ａｇ接合層との接合強度を向上させるための例えばＡｕ膜またはＡｇ膜が成膜される。絶縁基板２３のおもて面（半導体チップ２０側の面）は、絶縁基板２３の周縁に接合された樹脂ケース（不図示）で覆われている。半導体チップ２０のおもて面電極および裏面電極は、それぞれ外部電極用端子（不図示）により樹脂ケースの外側に引き出されている。樹脂ケースの内部は、樹脂やゲルなどの封止材（不図示）が充填されている。
　次に、第１の金属膜２および第２の金属膜３について詳細に説明する。第１の金属膜２は、導電部１の最表面に第２の金属膜３を成膜するために、第２の金属膜３の成膜前に導電部１の表面に成膜される。第１の金属膜２は、導電部１との接合強度が高く、かつ、表面に第２の金属膜３を成膜しやすい材料からなる。具体的には、第１の金属膜２は、例えば、銅（Ｃｕ）を主成分とする材料からなる。その理由は、第１のＡｇ接合層４を介して接合される第２の金属膜３と金属板５との接合強度を高くすることができるからである。
　また、第１の金属膜２は、ニッケル（Ｎｉ）を含まない材料からなるのが好ましい。その理由は、次のとおりである。第１～３のＡｇ接合層４，２１，２２により各部材どうしを接合するためには、２５０℃程度の温度で高温熱処理を行う必要がある。第１の金属膜２にニッケルが含まれる場合、この熱処理により第２の金属膜３内の、第１のＡｇ接合層４側の表面層にニッケル粒子が析出する。このニッケルの析出物により、第２の金属膜３と金属板５との接合強度が低下するからである。第１の金属膜２は、例えば、電解めっき法、無電解めっき法、スパッタリング法（物理蒸着法）または化学蒸着法により形成される。
　第２の金属膜３は、第１のＡｇ接合層４との接合強度を向上させるために、半導体チップ２０の最表面に形成される。第２の金属膜３は、第１のＡｇ接合層４との接合性が高く、第１の金属膜２よりもイオン化傾向が小さい材料からなる。具体的には、第２の金属膜３は、例えば、銀または金を主成分とする材料からなる。好ましくは、第２の金属膜３は、銀を主成分とする材料からなるのがよい。その理由は、第２の金属膜３の主成分を金とする場合よりも第２の金属膜３内へのニッケルの析出を抑制することができるからである。第２の金属膜３は、例えば、電解めっき法、無電解めっき法、スパッタリング法（物理蒸着法）または化学蒸着法により形成される。
　次に、図２に示す電子部品１０の製造方法について説明する。図３は、実施の形態にかかる電子部品の製造方法について示すフローチャートである。第１の金属膜２および第２の金属膜３を、例えば無電解めっき処理により形成する場合を例に説明する。まず、例えばスパッタリング法により、半導体ウエハのおもて面に、導電部１としてアルミニウムシリコン電極を形成する。次に、半導体ウエハを所望のチップサイズで切り出して半導体チップ２０を作製する。次に、第１，２の金属膜２，３を成膜するめっき処理（ステップＳ６，Ｓ７）を行う前に、半導体チップ２０に対してめっき前処理（ステップＳ１～Ｓ５）を行う。
　具体的には、めっき前処理は、まず、半導体チップ２０に脱脂処理を行う（ステップＳ１）。次に、エッチングによって、半導体チップ２０の表面に付着するパーティクルや有機物、酸化膜を除去する（ステップＳ２）。ステップＳ２の処理後に例えば硝酸を用いて半導体チップ２０を酸洗浄し、ステップＳ２の処理によって半導体チップ２０表面に生じた不溶性のエッチング残渣を除去してもよい。次に、ジンケート（亜鉛置換）処理（第１のジンケート処理）を行い、半導体チップ２０のおもて面の、後の工程で成膜される第１の金属膜２との密着性を向上させる（ステップＳ３）。
　次に、例えば硝酸を用いて半導体チップ２０を酸洗浄し、ステップＳ３で半導体チップ２０の表面に形成した置換亜鉛層を除去する（硝酸剥離、ステップＳ４）。次に、再度ジンケート処理（第２のジンケート処理）を行い、半導体チップ２０のおもて面の、第１の金属膜２との密着性を向上させ、めっき前処理を終了する（ステップＳ５）。上記ステップＳ１～Ｓ５の各処理の間には、それぞれ導電部１の表面を水洗する処理が行われる。
　次に、第１の金属膜２および第２の金属膜３を成膜するめっき処理（ステップＳ６，Ｓ７）を行う。具体的には、例えば無電解Ｃｕめっき処理を行い、導電部１の表面に第１の金属膜２を成膜する（ステップＳ６）。次に、半導体チップ２０を水洗した後、例えば無電解Ａｇめっき処理を行い、第１の金属膜２の表面に第２の金属膜３を成膜する（ステップＳ７）。
　次に、半導体チップ２０を絶縁基板２３に実装する。具体的には、絶縁基板２３の回路パターン２４の表面に、第３のＡｇ接合層２２となるＡｇ粒子を含有するペースト状の導電性組成物を所望のパターンで塗布する（ステップＳ８）。次に、Ａｇ粒子を含有するペースト状の導電性組成物の表面に、裏面を下（絶縁基板２３側）にして半導体チップ２０を置いた後、加熱しながら加圧してＡｇ粒子を含む導電性組成物を焼結する。これにより、第３のＡｇ接合層２２を介して、絶縁基板２３の回路パターン２４の表面に半導体チップ２０が接合される（ステップＳ９）。
　次に、半導体チップ２０最表面の第２の金属膜３の表面に、第１のＡｇ接合層４となるＡｇ粒子を含有するペースト状の導電性組成物を所望のパターンで塗布する（ステップＳ１０）。このとき、絶縁基板２３の回路パターン２４の表面にも、第２のＡｇ接合層２１となるＡｇ粒子を含有するペースト状の導電性組成物を所望のパターンで塗布する。次に、Ａｇ粒子を含有するペースト状の導電性組成物の表面に金属板５を置いた後、加熱しながら加圧してＡｇ粒子を含む導電性組成物を焼結する。これにより、第１のＡｇ接合層４を介して、半導体チップ２０最表面の第２の金属膜３の表面に金属板５の一端が接合される（ステップＳ１１）。また、第２のＡｇ接合層２１を介して、絶縁基板２３の回路パターン２４の表面に金属板５の他端が接合される。以上の工程により電子部品１０が完成する。
　Ａｇ粒子を含む導電性組成物を焼結するための熱処理は、例えば２００℃以上３５０℃以下の温度で加熱しながら、例えば０．２５ＭＰａ以上３０ＭＰａ以下の圧力で加圧することが好ましい。これにより、Ａｇ粒子を含有するペースト状の導電性組成物が焼結し、高い接合強度および優れた耐熱性、放熱性を有する第１のＡｇ接合層４を形成することができる。
　以上、説明したように、実施の形態によれば、導電部（半導体素子のおもて面電極）の表面にＣｕを主成分とする第１の金属膜を成膜することにより、導電部の最表面に、第１のＡｇ接合層との密着性の高い第２の金属膜を形成することができる。このため、導電部の最表面の第２の金属膜と、導電部を他部材に電気的に接続するための金属板とを接合する際に、第１のＡｇ接合層を用いることができる。これにより、第２の金属膜と金属板との接合にはんだ接合層を用いる場合に比べて接合強度を高くすることができる。また、はんだを用いて導電部と金属板とを接合するよりも、例えば高温度環境下での動作（例えば１７５℃での連続動作など）に耐え得る程度に耐熱性を向上させることができる。
　また、実施の形態によれば、導電部の表面にＣｕを主成分とする第１の金属膜を成膜することにより、第２の金属膜内に第１のＡｇ接合層との接合強度を低下させるＮｉ粒子が析出しない。これにより、導電部と第１のＡｇ接合層との接合強度が低下することを防止することができる。このため、第１のＡｇ接合層を介して、導電部と金属板とを強固に接合することができる。したがって、Ｐ／Ｃ（パワーサイクル）試験などにより評価される信頼性が向上する。具体的には、第１のＡｇ接合層による接合を行った電子部品は、Ｐ／Ｃ試験において例えば第１のＡｇ接合層にクラックが入り、このクラックが生じた部分から剥離が生じることで破壊に至る。このため、導電部と第１のＡｇ接合層との接合強度を向上させることにより、第１のＡｇ接合層にクラックが生じにくくなるため、電子部品の寿命が向上する。
　また、実施の形態によれば、導電部の最表面にＡｇを主成分とする第２の金属膜を成膜することにより、例えば第１の金属膜や第２の金属膜にＮｉが含まれている場合でも、第２の金属膜の、第１のＡｇ接合層側の表面層にＮｉ粒子が析出することを抑制することができる。これにより、導電部と第１のＡｇ接合層との接合強度が低下することを防止することができる。
　また、実施の形態によれば、第１～３のＡｇ接合層を用いて各部材を接合することにより、第１～３のＡｇ接合層のもつ高い融点（約９６０℃程度）、熱伝導度（１００Ｗ／ｍ・Ｋ以上３００Ｗ／ｍ・Ｋ以下）、および電気抵抗（１μΩｃｍ以上３μΩｃｍ以下）という特性を備えた電子部品を作製（製造）することができる。これにより、耐熱性が高く、放熱性が高い電子部品を作製することができる。また、実施の形態によれば、Ｎｉよりも熱伝導率が高いＣｕを主成分とする材料で第１の金属膜が形成されるため、Ｎｉを主成分とする材料で第１の金属膜を形成する場合よりも高い放熱性を得ることができる。
（実施例１）
　次に、Ａｇ粒子を含有する接合層（Ａｇ接合層）の接合強度について検証した。図４は、銀粒子材と各金属単体との接合強度を示す特性図である。まず、シリコンウエハの表面に金属層を形成した後、１０ｍｍ×１０ｍｍのチップサイズに切り出した半導体チップを作製した。次に、半導体チップの金属層上に、Ａｇ粒子を含有するペースト状の導電性組成物（Ａｇ粒子材）を塗布した。次に、２５０℃の温度で５分間加熱しながら加圧して導電性組成物を焼結し、金属層上にＡｇ接合層を形成した。導電性組成物を加熱するときの加圧量を種々変更して複数の試料を作製し、各試料において金属層とＡｇ接合層との接合強度をせん断力で評価するシェア強度試験を行った。
　上記シェア強度試験は、シリコンウエハの表面の金属層をＡｇ、Ａｕ、ＣｕおよびＮｉ単体でそれぞれ形成した各試料に対して行った。各金属層とＡｇ接合層との接合強度のシェア強度試験による測定結果を図４に示す。図４に示す結果より、各金属ともに、加圧量が高いほどＡｇ接合層との接合強度が高くなることが確認された。また、金属の種類によってＡｇ接合層との接合強度が異なることが確認された。具体的には、Ａｇ接合層との接合強度は、Ａｇが最も大きく、次にＡｕ、ＣｕおよびＮｉの順に小さくなる。これにより、Ａｇ接合層との接合強度は、ＮｉよりもＣｕのほうが大きいことが確認された。
（実施例２）
　次に、半導体チップ２０表面の導電部１と金属板５との接合強度について検証した。図５は、実施の形態にかかる電子部品の要部の接合強度について示す特性図である。図６は、図５に対応する電子部品の要部の接合強度を数値化した図表である。まず、実施の形態にしたがい、第１の金属膜２としてＣｕめっき膜を５μｍの厚さで成膜し、さらに第２の金属膜３としてＡｇめっき膜を０．１μｍの厚さで成膜した後、第１のＡｇ接合層４を介して金属板５を接合した半導体チップ２０を作製した（以下、実施例２とする）。
　具体的には、次のように実施例２を作製した。まず、半導体チップ２０として、６インチのシリコンウエハの一方の主面にスパッタリング法により導電部１となるアルミニウムシリコン（ＡｌＳｉ）電極を５μｍの厚さで形成した後、１０ｍｍ×１０ｍｍのチップサイズに切り出した。次に、めっき前処理を行った後、無電解Ｃｕめっき処理により、導電部１上に第１の金属膜２となるＣｕめっき膜を５μｍの厚さで成膜した。続けて、無電解Ａｇめっき処理により、第１の金属膜２上に第２の金属膜３となるＡｇめっき膜を０．１μｍの厚さで成膜した。
　次に、第２の金属膜３上にＡｇ粒子を含有するペースト状の導電性組成物（Ａｇ粒子材）を塗布した。このとき、８ｍｍ×８ｍｍで開口する開口部を有する厚さ１００μｍのメタルマスクを用いて、第２の金属膜３表面のメタルマスクの開口部と同面積の領域に導電性組成物を塗布した。次に、Ａｇめっきを施した金属板５をＡｇ粒子材上に置き、２５０℃の温度で５分間加熱しながら加圧して導電性組成物を焼結し、第２の金属膜３上に第１のＡｇ接合層４を形成した。これにより、第１のＡｇ接合層４を介して導電部１と金属板５とが接合された実施例２（第１の金属膜２／第２の金属膜３＝Ｃｕ／Ａｇ）が完成する。
　比較として、第１，２の金属膜２，３の構成が実施例２と異なる比較例１，２を作製した。比較例１は、第１の金属膜としてＮｉめっき膜を５μｍの厚さで成膜し、第２の金属膜としてＡｕめっき膜を０．０５μｍの厚さで成膜した（第１の金属膜／第２の金属膜＝Ｎｉ／Ａｕ）。比較例２は、第１の金属膜としてＮｉめっき膜を５μｍの厚さで成膜し、第２の金属膜としてＡｇめっき膜を０．１μｍの厚さで成膜した（第１の金属膜／第２の金属膜＝Ｎｉ／Ａｇ）。比較例１，２の第１，２の金属膜以外の構成は実施例２と同様である。比較例１，２の製造方法は、めっき処理により成膜するめっき膜の材料および厚さ以外は、実施例２の製造方法と同様である。
　上述した実施例２および比較例１，２において、導電性組成物を加熱するときの加圧量を種々変更して複数の試料をそれぞれ作製し、シェア強度試験を行った結果を図５，６に示す。シェア強度試験とは、導電部１と金属板５との接合強度をせん断力で評価する強度試験である。
　図５，６に示す結果より、実施例２および比較例２は、比較例１よりも接合強度が高いことが確認された。具体的には、例えば、第１のＡｇ接合層４を加圧量１０ＭＰａで焼結した場合、導電部１と金属板５との接合強度は、実施例２および比較例２においてそれぞれ６０．１ＭＰａおよび５８．８ＭＰａであったのに対し、比較例１では４２．５ＭＰａであった。すなわち、導電部１と金属板５との接合強度は、第２の金属膜をＡｇめっき膜とした実施例２および比較例２がほぼ等しく、第２の金属膜をＡｕめっき膜とした比較例１よりも高いことが確認された。
　したがって、半導体素子のおもて面電極（導電部１）の最表面の第２の金属膜３を構成する金属が、導電部１と金属板５との接合強度に大きく影響することが確認された。また、Ａｇを主成分とする第２の金属膜３を形成することにより、導電部１と金属板５との接合強度を向上させることができることが確認された。また、第１のＡｇ接合層４を焼結するときの加圧量を大きくするほど、導電部１と金属板５との接合強度を向上させることができることが確認された。加圧量０ＭＰａとは、加圧していない場合である。
（実施例３）
　次に、電子部品１０の接合強度について検証した。具体的には、製品としての電子部品１０を作製するには、実施の形態に示すように、半導体チップ２０表面の導電部１に金属板５を接合する前に、絶縁基板２３の回路パターン２４に半導体チップ２０を接合する。このため、この絶縁基板２３の回路パターン２４に半導体チップ２０を接合する工程が、半導体チップ２０表面の導電部１と金属板５との接合強度に及ぼす影響について検証した。まず、第２の金属膜３内へのＮｉ析出量を測定した。
　図７は、実施の形態にかかる電子部品を構成する金属膜の含有成分およびその含有率を示す特性図である。図８は、図７に対応する金属膜の含有成分およびその含有率を数値化した図表である。図７，８において、加熱前とは、絶縁基板２３の回路パターン２４に半導体チップ２０を接合する工程を行っていない場合を示す。すなわち、加熱前とは、実施例２および比較例１，２である。加熱後とは、絶縁基板２３の回路パターン２４に半導体チップ２０を接合する工程を行い、実施の形態にかかる電子部品１０（以下、実施例３とする）を作製した場合を示す（図９，１０についても同様）。実施例３の絶縁基板２３および第３のＡｇ接合層２２以外の構成は、実施例２と同様である。
　具体的には、次のように実施例３を作製した。まず、実施例２と同様に、導電部１となるＡｌＳｉ電極を形成した半導体チップ２０を用意し、導電部１上に第１，２の金属膜２，３となるＣｕめっき膜およびＡｇめっき膜を順に成膜した。次に、絶縁基板２３の回路パターン２４上にＡｇ粒子を含有するペースト状の導電性組成物（Ａｇ粒子材）を塗布した。このとき、チップサイズよりも大きく開口する開口部を有するメタルマスクを用いて、絶縁基板２３の回路パターン２４表面のメタルマスクの開口部と同面積の領域に導電性組成物を塗布した。
　次に、裏面を絶縁基板２３側にして半導体チップ２０をＡｇ粒子材上に置き、２５０℃の温度で５分間加熱しながら１０ＭＰａの圧力で加圧して導電性組成物を焼結し、絶縁基板２３の回路パターン２４上に第３のＡｇ接合層２２を形成した。これにより、第３のＡｇ接合層２２を介して絶縁基板２３の回路パターン２４上に半導体チップ２０が接合される。次に、実施例２と同様に、半導体チップ２０の第２の金属膜３上に第１のＡｇ接合層４を形成し、第１のＡｇ接合層４を介して導電部１と金属板５とを接合することにより、実施例３が完成する。実施例３では、第１のＡｇ接合層４を焼結させるための高温熱処理における加圧量を１０ＭＰａとした。
　加熱後における比較として、第１，２の金属膜２，３の構成が実施例３と異なる比較例３，４を作製した。比較例３の絶縁基板および第３のＡｇ接合層以外の構成は、比較例１と同様である。比較例４の絶縁基板および第３のＡｇ接合層以外の構成は、比較例２と同様である。上述した実施例３および比較例３，４において、それぞれ第２の金属膜内のＮｉ析出量を測定した結果を図７，８に示す。図７，８には、第２の金属膜の第１のＡｇ接合層側の表面層の任意の数箇所における各含有成分の平均含有率（％）を示す。
　図７，８に示すように、第１の金属膜２としてＣｕめっき膜を設けた実施例においては、加熱前（実施例２）および加熱後（実施例３）ともに、第２の金属膜３内にＮｉの析出は確認されなかった。一方、第１の金属膜としてＮｉめっき膜を設けた比較例では、加熱前（比較例１，２）および加熱後（比較例３，４）ともに、第２の金属膜３内にＮｉの析出が確認された。また、第１の金属膜としてＮｉめっき膜を設けた比較例では、加熱前（比較例１，２）に比べて、加熱後（比較例３，４）にＮｉ含有率が増大していることが確認された。
　具体的には、第２の金属膜としてＡｕめっき膜を設けた場合、第２の金属膜のＮｉ含有率は、加熱前（比較例１）に１．８％であったのに対し、加熱後（比較例３）に１３．８％となることが確認された。第２の金属膜としてＡｇめっき膜を設けた場合、第２の金属膜のＮｉ含有率は、加熱前（比較例２）に０．９％であったのに対し、加熱後（比較例４）に２．８％となることが確認された。したがって、第２の金属膜としてＡｕめっき膜を設けた場合、第２の金属膜としてＡｇめっき膜を設けた場合に比べて、Ｎｉの析出が多いことが確認された。
　次に、第２の金属膜３のＮｉ含有率と、電子部品１０の接合強度との関係について検証した。図９は、実施の形態にかかる電子部品の接合強度について示す特性図である。図１０は、図９に対応する電子部品の接合強度を数値化した図表である。実施例３および比較例３，４の接合強度を測定した結果を図９，１０に示す。図９，１０において、実施例２および比較例１，２の接合強度は、図５，６に示す加圧量１０ＭＰａの場合の接合強度である。
　図９，１０に示す結果より、Ｎｉ含有率が最も多い比較例１，３（第１の金属膜／第２の金属膜＝Ｎｉ／Ａｕ）では、４２．５ＭＰａから６．６ＭＰａへと接合強度が大きく低下することが確認された（図９に細かい破線の矢印で示す）。また、比較例１，３よりもＮｉ含有率が少ない比較例２，４（第１の金属膜／第２の金属膜＝Ｎｉ／Ａｇ）でも、接合強度が５８．８ＭＰａから３９．８ＭＰａへと低下することが確認された（図９に粗い破線の矢印で示す）。一方、Ｎｉが析出していない実施例２，３（第１の金属膜２／第２の金属膜３＝Ｃｕ／Ａｇ）では、加熱前および加熱後において接合強度はそれぞれ６０．１ＭＰａおよび５９．５ＭＰａであり、ほとんど低下しないことが確認された（図９に実線の矢印で示す）。
　したがって、図７～１０に示す結果より、Ｃｕを主成分とする第１の金属膜２を形成することにより、加熱前および加熱後であっても電子部品１０の接合強度が低下することを抑制することができることが確認された。Ｃｕを主成分とする第１の金属膜２を形成することにより、Ｎｉを主成分とする第１の金属膜２を形成する場合よりも、第２の金属膜３と第１のＡｇ接合層４との密着性を向上させることができることが確認された。また、Ａｇを主成分とする第２の金属膜３を形成することにより、第２の金属膜３内にＮｉが析出した場合に、加熱後におけるＮｉの析出を抑制することができることが確認された。
　以上において本発明では、半導体素子のおもて面電極と金属板とを接合する場合を例に説明したが、これに限らず、他の導電部と、当該導電部を他部材に電気的に接続するための金属板とを接合する場合にも本発明を適用可能である。
　以上のように、本発明にかかる電子部品および電子部品の製造方法は、各部材を接合して電気的に接続する構成を有する電子部品などパッケージ構造の半導体装置に有用である。
　１　導電部
　２　第１の金属膜（Ｃｕめっき膜）
　３　第２の金属膜（Ａｇめっき膜）
　４　Ａｇ粒子を含有する接合層
　５　金属板
　１０　電子部品
　２０　半導体チップ

Claims (14)

  1. 　半導体素子の表面に設けられた導電部と、
    　前記導電部の表面に設けられた、銅を主成分とする材料からなる第１の金属膜と、
    　前記第１の金属膜の表面に設けられた、前記第１の金属膜よりもイオン化傾向が小さい金属を主成分とする材料からなる第２の金属膜と、
    　前記第２の金属膜の表面に設けられた、銀粒子を含有する接合層と、
    　を備えることを特徴とする電子部品。
  2. 　前記半導体素子は、シリコンまたは炭化シリコンからなり、
    　前記導電部は、少なくとも銅またはアルミニウムを主成分とする材料からなることを特徴とする請求項１に記載の電子部品。
  3. 　前記第２の金属膜は、銀を主成分とする材料からなることを特徴とする請求項１に記載の電子部品。
  4. 　前記第１の金属膜は、めっき膜または蒸着膜であることを特徴とする請求項１に記載の電子部品。
  5. 　前記第２の金属膜は、めっき膜または蒸着膜であることを特徴とする請求項１に記載の電子部品。
  6. 　前記接合層は、２００℃以上３５０℃以下の温度で加熱されるとともに、０．２５ＭＰａ以上３０ＭＰａ以下の圧力で加圧されて形成された焼結体であることを特徴とする請求項１に記載の電子部品。
  7. 　前記接合層と前記第２の金属膜との接合強度を低下させるニッケルの析出物を前記第２の金属膜内に含まないことを特徴とする請求項１～６のいずれか一つに記載の電子部品。
  8. 　半導体ウエハの表面に設けられた導電部の表面に、銅を主成分とする材料からなる第１の金属膜を形成する工程と、
    　前記第１の金属膜の表面に、前記第１の金属膜よりもイオン化傾向が小さい金属を主成分とする材料で第２の金属膜を形成する工程と、
    　前記第２の金属膜の表面に、銀粒子を含有する導電性材料を塗布する工程と、
    　熱処理によって前記導電性材料を焼結する工程と、
    　を含むことを特徴とする電子部品の製造方法。
  9. 　前記導電部は、シリコンまたは炭化シリコンからなる前記半導体ウエハの表面に、少なくとも銅またはアルミニウムを主成分とする材料で形成されることを特徴とする請求項８に記載の電子部品の製造方法。
  10. 　前記第２の金属膜は、銀を主成分とする材料で形成されることを特徴とする請求項８に記載の電子部品の製造方法。
  11. 　前記第１の金属膜は、めっき法、スパッタリング法または蒸着法によって形成されることを特徴とする請求項８に記載の電子部品の製造方法。
  12. 　前記第２の金属膜は、めっき法、スパッタリング法または蒸着法によって形成されることを特徴とする請求項８に記載の電子部品の製造方法。
  13. 　前記熱処理において、２００℃以上３５０℃以下の温度で加熱しながら、０．２５ＭＰａ以上３０ＭＰａ以下の圧力で加圧することによって、前記導電性材料を焼結することを特徴とする請求項８に記載の電子部品の製造方法。
  14. 　前記熱処理において、前記導電性材料の焼結体である接合層と前記第２の金属膜との接合強度を低下させるニッケルが、前記第２の金属膜内に析出しないことを特徴とする請求項８～１３のいずれか一つに記載の電子部品の製造方法。
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