TWI689020B - 用於晶粒及夾扣附著之方法 - Google Patents

用於晶粒及夾扣附著之方法 Download PDF

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TWI689020B
TWI689020B TW104142327A TW104142327A TWI689020B TW I689020 B TWI689020 B TW I689020B TW 104142327 A TW104142327 A TW 104142327A TW 104142327 A TW104142327 A TW 104142327A TW I689020 B TWI689020 B TW I689020B
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die
clip
substrate
adhesive
sintering
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TW104142327A
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TW201626474A (zh
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奧斯卡 卡哈席里
尹芙 波斯奇曼
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美商阿爾發金屬化工公司
荷蘭商先進包裝中心公司
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Abstract

1.一種晶粒及夾扣附著之方法，其包含：提供一夾扣、一晶粒及一基板；將一可燒結銀薄膜層積於該夾扣及該晶粒上；將一黏劑沈積於該基板上；將該晶粒放置於該基板上；將該夾扣放置於該晶粒及該基板上以產生一基板、晶粒及夾扣封裝；且燒結該基板、晶粒及夾扣封裝。

Description

用於晶粒及夾扣附著之方法 相關申請案之交叉參考
本申請案係關於且主張2014年12月17日申請之名稱為「METHOD FOR DIE AND CLIP ATTACHMENT」之美國臨時專利申請案第62/093,004號之優先權，該案之全部內容出於所有目的以引用之方式併入本文中。
本揭示內容一般係關於用於將電子組件附著至一基板或引線框架之方法，且更特定言之係關於併入用於執行此等方法之燒結材料之方法。
燒結銀晶粒附著薄膜組合奈米銀粉末之獨特物理性質及新穎化學調配物組合成容許結合各種電子器件來產生極可靠之高熱及導電介面之新穎產品。針對燒結銀晶粒附著薄膜經唯一地定位以裝配至現有製造設備及程序中以實現大量製造之程序，參考美國公開專利申請案第2012/0114927 A1號，該案之全部內容出於所有目的併入本文中。此技術涵蓋來自電子及自動設備之大面積閘流體及功率模組之各種器件及應用以微型化行動技術及LED照明之離散組件。相較於傳統結合技術，該技術藉由增大功率或光輸出或可靠性而改良現有器件之效能。燒結薄膜實現使用新的高溫SiC及GaN半導體及產生無法使用現有技術獲得之電效率之新的器件設計。
銀晶粒附著膏及薄膜係將一電子器件附著至一被動基板或另一 器件之結合材料。一銀薄膜係獨特的，因為其可經施加或層積至一個別晶粒、晶粒之背側或晶圓。在一項實施例中，使用足以增密該薄膜且建立材料與連接部分之間的緊密連接之之一力將該晶粒放置於預加熱基板上。在所施加之熱量及壓力下，該薄膜將該晶粒燒結且連接至該基板。晶粒與基板之間的所得接點係具有參考圖1所展示之結構及性質之金屬銀。
在許多半導體封裝中，透過夾扣接合將該器件之一電連接提供至該晶粒頂部。相較於佈線接合，此配置確保封裝之低電阻及改良之效能。藉由將一銅夾扣焊接至一個或兩個接合墊及其等對應引線而完成夾扣接合。程序通常使用高鉛含量焊錫材料且需要焊接程序之一良好控制(尤其在焊錫回流程序之熔化相期間晶粒及夾扣之定位)。
用於使用可燒結銀薄膜之晶粒及夾扣附著之一程序適用於離散封裝之大量製造。該程序利用可施配黏劑之技術來在燒結前將晶粒及夾扣定位於引線框架上。該等夾扣亦可用於連接至一引線框架之一矩陣中。可在任何市售燒結壓機中完成下列燒結步驟。
本發明之一個態樣係關於晶粒及夾扣附著之一方法，其包括：提供一夾扣、一晶粒及一基板；將一可燒結銀薄膜層積於該夾扣及該晶粒上；將一黏劑沈積於該基板上；將該晶粒放置於該基板上；將該夾扣放置於該晶粒及該基板上以產生一基板、晶粒及夾扣封裝；且燒結該基板、晶粒及夾扣封裝。
本發明之實施例進一步可包含使用施加2至3MPa或更高之一壓力及施加130℃之一溫度達30秒而層積該可燒結銀薄膜。該晶粒可個別層積或層積為一完整晶圓隨後切割。該夾扣可個別層積或層積成一銅板形式隨後切割或衝壓。可在能夠提供指定壓力及溫度之一積層壓機或一晶粒接合機中完成層積該可燒結銀薄膜。該經層積晶粒可經收 集及儲存於一窩伏爾組件(waffle pack)中或一切割帶上。該層積夾扣可經收集及儲存於該帶、捲盤或窩伏爾組件上。該黏劑可經施配於該基板上以在該封裝之組件已移動至該燒結壓機之前將該等組件放置且固持於適當位置。該黏劑提供將該晶粒及該夾扣暫時附著至該基板。該黏劑在該基板、晶粒及夾扣封裝之該燒結期間蒸發而不干擾該燒結程序。該晶粒可使用一晶粒接合器放置於該基板上且使用該黏劑固定於該位置中。該夾扣可使用一取放機或一環氧樹脂晶粒接合器放置於該基板上且使用該黏劑固定於該位置中。燒結該基板、晶粒及夾扣封裝可包含具有一壓力工具及一加熱台之一燒結壓機。燒結可包含施加10MPa之一壓力及250℃之一溫度達60秒。夾扣與可燒結銀薄膜可層積成經連接至該基板之一矩陣形式。該等夾扣之間的一間距可與定位於該基板上之該等晶粒匹配。可藉由本文描述之該方法產生一焊接點。一夾扣可實現一晶粒及一基板之一腳部墊之一均勻壓力傳遞。
10‧‧‧晶粒
12‧‧‧夾扣
14‧‧‧可燒結銀薄膜
16‧‧‧黏劑
18‧‧‧引線框架
20‧‧‧加熱台
30‧‧‧夾扣
32‧‧‧夾扣
34‧‧‧夾扣
40‧‧‧夾扣
42‧‧‧晶粒
44‧‧‧引線框架
50‧‧‧夾扣
52‧‧‧晶粒
54‧‧‧引線框架
在下文中參考隨附圖式討論至少一項實施例之各種態樣，該等圖式並不意在按比例繪製。在圖、實施方式或任何請求項中之技術特徵伴隨元件符號之處，已出於增大圖、實施方式或申請專利範圍中之可理解性之唯一目的而包含該等元件符號。因此，元件符號之存在與否皆不意在具有對任何申請專利範圍元素之範疇之限制效應。在圖中，在各種圖中繪示之各相同或幾乎相同之組件藉由一相同數字表示。為清晰起見，並非每一組件皆在每一圖中標記。該等圖出於繪示及解釋之目的提供且不視為本發明之限制之一定義。在圖中：圖1係一晶粒與係金屬銀之一基板之間的一所得接點之一照相圖示；圖2A至圖2F係展示本發明之一實施例之晶粒及夾扣附著之一程序之示意圖； 圖3A至圖3C係本發明之實施例之夾扣設計之示意性橫截面圖；圖4A及圖4B繪示本發明之一實施例之一夾扣設計；圖5係展示本發明之一實施例之具有一晶粒及夾扣附著之一封裝之一示意透視圖；圖6A至圖6C繪示本發明之實施例之一引線框架、夾扣及晶粒；圖7A及圖7B展示經施配於一引線框架上以將一晶粒及夾扣固持於適當位置之一黏劑；圖8A至圖8C係本發明之實施例之完成之晶粒及夾扣附著總成之照相圖示；圖9A至圖9H係藉由CSAM之接點分析之照相圖示；圖10A及圖10B係藉由SEM之接點分析之照相圖示；圖11A至圖11E係完成之晶粒及夾扣附著總成之接點分析之照相圖示；圖12A係具有在層積之前的夾扣之一引線框架之一視圖；圖12B係在層積之前夾扣之一視圖；圖13A係具有在層積之後的夾扣之一引線框架之一視圖；及圖13B係在層積之後夾扣之一視圖。
燒結技術係夾扣焊接之一極佳替代物，此係由於燒結提供無空隙高導電且導熱接合且消除含有有毒鉛之焊錫之使用。本發明描述唯一適用於透過燒結程序之附著有夾扣之電源封裝之大量製造之一程序本發明之實施例之程序利用可燒結銀薄膜及特殊黏劑之性能來確保該等組件之準確定位及可靠連接。本文揭示使用預施加之可燒結銀薄膜在一單一步驟中之晶粒及夾扣附著之一程序。在美國公開專利申請案第2012/0114927 A1號中描述銀薄膜之組成及使用。參考圖2A至圖2F示意性描述該程序，其展示一晶粒10及一夾扣12。
在特定實施例中，用於該程序(圖2A)中之材料可包含一晶粒、一夾扣及一基板(例如，一引線框架)。根據在美國公開專利申請案第2012/0114927 A1號中描述之程序，在第一步驟(圖2B)中，封裝之兩個組件(即，一晶粒10及一夾扣12)與可燒結銀薄膜14層積。在特定實施例中，層積壓力可在少於1秒至90秒內在100℃至200℃之間的一溫度下在0.5MPa至20MPa之間變化。在一特定實施例中，層積參數可包含施加2至3MPa或更高之一壓力及130℃之一溫度達30秒。晶粒可個別層積或層積為一完整晶圓隨後切割。類似地，夾扣可個別層積或層積成一銅板形式隨後切割或衝壓。層積步驟可在能夠提供指定壓力及溫度之一層積壓機中或在晶粒接合設備(諸如藉由BE半導體行業N.V.供應之一DataconTM 2200 evo多晶片晶粒接合器)或類似機器中完成。層積晶粒經收集及儲存於一窩伏爾組件中或一切割帶上。層積夾扣經收集及儲存於帶、捲盤或窩伏爾組件上。
在一第二步驟(圖2C)中，一黏劑16經施配於一基板(或引線框架)18上以在部分已移動至燒結壓機之前將封裝之組件放置且固持於適當位置。黏劑16之作用係提供將晶粒10及夾扣12暫時附著至引線框架18。在燒結程序期間，黏劑蒸發而不干擾燒結程序。
在下一步驟(圖2D)中，晶粒10經放置於引線框架18上且歸因於黏劑16固定於該位置中。晶粒放置可在藉由BE半導體行業N.V.供應之一ESECTM 2100晶粒接合器或類似設備中完成。
在第四步驟(圖2E)中，使用標準取放設備或等效環氧樹脂晶粒接合器(諸如一ESECTM 2100)將夾扣12放置於引線框架18上。夾扣12歸因於黏劑固定於該位置中。夾扣放置可在一取放機(諸如一Fuji®取放機)或類似設備中完成。
在最後步驟(圖2F)中，裝有所有晶粒及夾扣之引線框架18移動至燒結壓機(加熱台20)。在特定實施例中，燒結壓力可在少於1秒至180 秒內於190℃至300℃之間的一溫度下在3MPa至25MPa之間變化。在一項實施例中，該等部分可在10MPa之一壓力及250℃之溫度下達60秒燒結。燒結步驟可在來自Boschman Technologies之SinterstarTM Innovate-F-XL壓機或類似設備中完成。
夾扣之形狀可變化且取決於晶粒及引線框架設計以容納電連接。歸因於燒結程序，夾扣設計亦可考慮熱應力釋放。夾扣設計之實例在圖3A、圖3B及圖3C中。圖3A繪示夾扣30。圖3B繪示夾扣32。圖3C繪示夾扣34。如展示，夾扣30及32各經組態具有一個腿部以嚙合引線框架。夾扣34經組態具有一個腿部以嚙合引線框架。在一特定實施例中，夾扣設計可體現在圖4A及圖4B中展示之設計。如展示，夾扣40經設計以固定晶粒42及引線框架44。應理解，可取決於晶粒及/或引線框架之大小及形狀採用任何數量之夾扣設計。
程序示範 目標封裝
圖5繪示本發明之一實施例之具有一晶粒及夾扣附著之一封裝。如展示，封裝包含夾扣50及晶粒52，其等經組態以固定至引線框架54。
材料及組件
圖6A繪示一例示性引線框架，圖6B繪示例示性夾扣設計，且圖6C繪示本發明之實施例之例示性晶粒。亦提供銀薄膜及黏劑。
程序細節
晶粒及夾扣與來自Alpha Metals,Inc之可燒結銀薄膜Argomax® 8020層積。黏劑在引線框架上施配於下文展示位置處。在一項實施例中，黏劑以DATA 600售賣且係Alpha Metals,Inc之一商業產品。
圖7A及圖7B展示經施配於一引線框架上以將一晶粒及夾扣固持於適當位置之一黏劑。
晶粒及夾扣經放置於引線框架上之八個位置處且在來自Boschman Technologies之燒結壓機SinterstarTM中燒結。從封裝之頂部及側部之光學視圖指出在晶粒與基板之間及夾扣與晶粒之間具有良好燒結連接。
夾扣設計係獨特的且容許均勻壓力自夾扣之一頂部傳遞至一晶粒區域且至夾扣之一腳部墊。相反地，晶粒工具係獨特的且經設計以施加跨夾扣之一頂部區域之均勻壓力。如此，可在一個步驟中燒結夾扣、晶粒及基板或引線框架。
此外，晶粒工具(稱為動態嵌件)可叢集成一陣列以立即施加跨各個別晶粒、一晶粒群組或所有晶粒之均勻力。可使用動態嵌件工具組態有效處理平坦封裝及三維封裝。在僅限於按壓區域的情況下，可並行燒結一引線框架或封裝陣列。
夾扣及工具設計容許高生產量及良率。因此，受益於高可靠性及一無鉛系統可達成成本目標。
圖8A至圖8C係本發明之實施例之完成之晶粒及夾扣附著總成之照相圖示。
藉由共焦掃描聲波顯微術(CSAM)之接點分析
掃描聲波顯微術顯示在兩個介面處之均勻及完整連接，即夾扣與晶粒及晶粒與基板。
圖9A至圖9H係藉由CSAM之接點分析之照相圖示。
藉由掃描式電子顯微鏡(SEM)之接點分析
附著組件經橫截，且使用一掃描電子顯微鏡檢查連接。連接晶粒及夾扣兩者。在連接部分之間形成約15μm之均勻完全燒結銀接合。
圖10A及圖10B係藉由SEM之接點分析之照相圖示。圖11A至圖11E係完成之晶粒及夾扣附著總成之接點分析之照相圖示。
一引線框架上之夾扣層積之程序
夾扣可如上文描述與一可燒結銀層個別地層積或層積成連接至引線框架之一矩陣形式。在此情況下，夾扣之間的間距與定位於基板或引線框架上之晶粒匹配。圖12A、圖12B、圖13A及圖13B展示在層積之前及之後之此一設計之一實例。為將夾扣附著至晶粒之頂部側，夾扣將定位且放置於具有先前附著之晶粒之基板引線框架之頂部上。類似於上文所描述內容進行下列燒結步驟。
圖12A係在具有層積之前的夾扣之一引線框架之一視圖。圖12B係在層積之前夾扣之一視圖。圖13A係具有在層積之後的夾扣之一引線框架之一視圖。圖13B係在層積之後夾扣之一視圖。
替代地，平坦銅箔(具有或不具有一鍍銀層)可與可燒結銀薄膜層積。在一下列步驟中，銅箔可經修整且衝壓以產生具有在圖13B中展示之夾扣之一引線框架。
將瞭解，本文討論之方法及裝置之實施例在應用中不限於在下列描述中提出或在隨附圖式中繪示之組件之構造及配置之細節。方法及裝置能夠實現於其他實施例中且可以各種方式實踐或執行。特定實施方案之實例在本文中僅用於繪示之目的而提供且不意在限制。特定言之，結合任何一或多項實施例討論之動作、元件及特徵不意在從任何其他實施例中之一類似角色排除。
而且，在本文中使用之措辭及術語出於描述之目的且不應視為限制。對以單數形式指涉之本文之系統及方法之實施例或元件或動作之任何參考亦可包括包含複數個此等元件之實施例，且以複數形式對本文之任何實施例或元件或動作之任何參考亦可包括僅包含一單一元件之實施例。單數形式或複數形式之參考不意在限制當前所揭示之系統或方法、其等組件、動作或元件。本文中「包含」、「包括」、「具有」、「含有」、「涉及」及其等之變形之使用意欲涵蓋在其後列出之項 目及其等之等效物以及額外項目。對「或」之參考可視為包含性的使得使用「或」之任何項可指示所描述之項之一單一、一個以上及所有之任一者。對前部及後部、左側及右側、頂部及底部、上部及下部及垂直及水平之任何參考意在為方便描述，而不將本系統及方法或其等組件限於任何一個位置或空間定向。
因此，在已描述至少一項實施例之若干態樣之情況下，應瞭解，熟習此項技術者容易想到各種更改、修改及改良。此等更改、修改及改良意在係本發明之部分且意在處於本發明之範疇內。因此，以上描述及圖式僅係藉由實例，且應從隨附申請專利範圍及其等之等效物之正確建構來判定本發明之範疇。
50‧‧‧夾扣
52‧‧‧晶粒
54‧‧‧引線框架

Claims (18)

  1. 一種晶粒及夾扣附著之方法，其包括：提供一夾扣、一晶粒及一基板；在該夾扣及該晶粒上層積一可燒結銀薄膜；將一黏劑沈積於該基板上；將該晶粒放置於該基板上，其中該黏劑及該可燒結銀薄膜係提供於該晶粒及該基板之間；將該夾扣放置於該晶粒及該基板上以產生一基板、晶粒及夾扣封裝，其中該可燒結銀薄膜係提供於該晶粒及該夾扣之間，且其中該黏劑及該可燒結銀薄膜係提供於該夾扣及該基板之間；及燒結該基板、晶粒及夾扣封裝。
  2. 如請求項1之方法，其中層積該可燒結銀薄膜包含施加0.5至20MPa之一壓力及在100至200℃之間的一溫度達少於1秒至90秒。
  3. 如請求項1之方法，其中層積該可燒結銀薄膜包含施加2至3MPa或更高之一壓力及130℃之一溫度且施加達30秒。
  4. 如請求項1之方法，其中該晶粒個別放置或放置為一完整晶圓隨後切割。
  5. 如請求項1之方法，其中該夾扣個別放置或放置成一銅板形式隨後切割或衝壓。
  6. 如請求項1之方法，其中在能夠提供指定壓力及溫度之一積層壓機或一晶粒接合機中實現層積該可燒結銀薄膜。
  7. 如請求項1之方法，其中該層積晶粒經收集及儲存於一窩伏爾組件中或一切割帶上。
  8. 如請求項1之方法，其中該層積夾扣經收集及儲存於一帶、捲盤 或窩伏爾組件上。
  9. 如請求項1之方法，其中該黏劑經施配於該基板上以在該封裝之組件已移動至該燒結壓機之前將該等組件放置且固持於適當位置。
  10. 如請求項8之方法，其中該黏劑提供將該晶粒及該夾扣暫時附著至該基板。
  11. 如請求項10之方法，其中該黏劑在該基板、晶粒及夾扣封裝之該燒結期間蒸發而不干擾該燒結程序。
  12. 如請求項1之方法，其中該晶粒使用一晶粒接合器放置於該基板上且使用該黏劑固定於一位置中。
  13. 如請求項1之方法，其中該夾扣使用一取放機或一環氧樹脂晶粒接合器放置於該基板上且使用該黏劑固定於一位置中。
  14. 如請求項1之方法，其中燒結該基板、晶粒及夾扣封裝包含具有一壓力工具及一加熱台之一燒結壓機。
  15. 如請求項14之方法，其中燒結包含施加自3至25MPa之一壓力及在190至300℃之間的一溫度達1至180秒。
  16. 如請求項14之方法，其中燒結包含施加自10MPa之一壓力及250℃之一溫度達60秒。
  17. 如請求項1之方法，其進一步包括多個夾扣，且其中該等夾扣與該可燒結銀薄膜經層積成連接至該基板之一矩陣的一形式。
  18. 如請求項17之方法，其中該等夾扣之間的一間距與定位於該基板上之晶粒匹配。
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