TWI549171B - 施加於切割膠帶上之底部填充膜的預切割晶圓 - Google Patents

施加於切割膠帶上之底部填充膜的預切割晶圓 Download PDF

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TWI549171B
TWI549171B TW101103276A TW101103276A TWI549171B TW I549171 B TWI549171 B TW I549171B TW 101103276 A TW101103276 A TW 101103276A TW 101103276 A TW101103276 A TW 101103276A TW I549171 B TWI549171 B TW I549171B
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underfill
semiconductor wafer
dicing
wafer
underfill material
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TW201236073A (en
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吉娜 洪
金潤相
羅絲 古諾
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漢高智慧財產控股公司
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Description

施加於切割膠帶上之底部填充膜的預切割晶圓
本發明係關於製作半導體晶粒之方法。
電設備及電子設備之微型化及輕量化已導致需要較薄半導體裝置及較薄半導體封裝。一種完成此之方式係藉由自半導體晶圓之背側移除過量材料來薄化晶圓，此通常係在將晶圓切成個別半導體晶粒之前進行。
用以製造更小且更有效半導體封裝之另一解決方案係採用附接至晶圓之作用面之金屬凸塊的陣列。金屬凸塊經佈置以與基板上之結合墊匹配。在金屬回流成熔體時，其與結合墊連接，形成電連接及機械連接二者。此金屬凸塊封裝通常稱作「覆晶」，此乃因凸起之半導體經翻轉以附接至其基板。
由於半導體與基板間存在之熱失配，重複熱循環會對金屬互連件施加應力，潛在地導致最終裝置失效。為抵消此問題，將囊封材料(通常稱作底部填充料)佈置於半導體與基板間之空隙中，圍繞並支撐金屬凸塊。
半導體封裝製作中之當前趨勢偏好以晶圓級完成盡可能多之製程步驟，允許同時處理多個積體電路，而非如同晶粒個體化後所發生的那樣個別地處理。然而，薄化矽半導體晶圓易碎，因此在半導體製作中採用如下方法係有利的：在將晶圓切成個別半導體晶粒時不會威脅晶圓之完整性且具有盡可能少之步驟。
一種將半導體晶圓切成個別晶粒之新方法稱作「隱形切割」。隱形切割係將雷射光束輻照至半導體晶圓內部之所選區域，藉此弱化彼等區域中之矽鍵且使得更易於分開彼等區域內之矽晶圓的切割方法。使用隱形切割可切割極薄半導體晶圓而不對晶圓施加物理應力，減小對晶圓之損害，且不降低個別晶粒之晶粒強度。製備切割用晶圓以便可採用隱形雷射切割可為有利的。
本發明係關於製備具有施加底部填充料之薄化半導體晶圓用於切割之方法，該方法消除習用製作中之一步驟且有助於隱形切割。該方法包含：(a)提供薄化半導體晶圓，該半導體晶圓在其作用面上具有複數個金屬凸塊及視情況垂直貫穿矽晶圓之矽通孔；(b)在切割支撐膠帶上提供底部填充材料，其中將該底部填充材料預切割成半導體晶圓之形狀；(c)使該切割支撐膠帶上之底部填充材料與該半導體晶圓對準，並將該底部填充材料層壓至該半導體晶圓。在此方法之一個實施例中，將分離層佈置在底部填充料與切割膠帶間。在另一實施例中，本發明係關於在一側上佈置有底部填充材料之切割膠帶。在又一實施例中，將分離層佈置在底部填充料與切割膠帶間。
本發明係關於製備用於切割之半導體晶圓的方法。半導體晶圓在其作用面上具有複數個金屬凸塊。本發明之本質係在一側上佈置有底部填充材料之切割膠帶的用途。因 此，切割膠帶/底部填充料在一個步驟中供應底部填充材料及切割膠帶。替代將底部填充材料施加至半導體晶圓，並在個別步驟中將切割膠帶安裝於底部填充料上，使用組合之切割膠帶及底部填充料消除製作過程中之一個步驟。切割膠帶、底部填充料及晶圓之總成可佈置於切割框中以使晶圓之非作用面向上定向，以易於隱形切割。
晶圓係根據已知方法自半導體材料(通常為矽、砷化鎵、鍺或類似化合物半導體材料)製得。根據工業文獻中充分記載之半導體及金屬製作方法在晶圓頂部側上形成複數個金屬凸塊及其金屬組成。將金屬凸塊佈置於半導體晶圓之一個面(稱作作用面)上以與半導體之基板上之金屬結合墊匹配。在金屬回流成熔體時，其與結合墊連接，形成電連接及機械連接二者。
出於將電路自一個半導體晶圓連接至另一半導體晶圓或連接至半導體之基板之目的，矽通孔係完全延伸貫穿矽晶圓之垂直通道。
切割膠帶在製作過程中用於在切割操作期間(亦即在將半導體晶圓切成個別半導體晶粒期間)支撐晶圓。切割膠帶可自多個來源購得且在各種形式中可由載體上之熱敏性、壓敏性或UV敏感性黏著劑組成。載體通常係聚烯烴或聚醯亞胺之撓性基板。在分別施加熱、拉應變或UV時，黏著性降低，使得可移除切割膠帶。通常，釋放襯墊覆蓋黏著層且可在即將使用切割膠帶之前容易地移除。
保護性支撐膠帶或載體在製作過程中用於在晶圓薄化 (或背研磨)過程期間保護並支撐金屬凸塊及晶圓之作用面。在一些製作方法中，保護性支撐物可為玻璃片或載片、另一矽晶圓或適於背研磨之膠帶。背研磨膠帶可自多個來源購得且在各種形式中係由載體上之熱敏性、壓敏性或UV敏感性黏著劑組成。載體通常係聚烯烴或聚醯亞胺之撓性基板。在分別施加熱、拉應變或UV時，黏著性降低，使得可移除保護性支撐膠帶。通常，釋放襯墊覆蓋黏著層且可在即將使用保護性支撐物之前容易地移除。可藉由(例如)機械研磨、雷射研磨或蝕刻實施背研磨操作。
已知適於作為可呈膜形式之底部填充料化學物質的黏著劑及囊封劑，如同製造底部填充膜之方法一樣。適宜底部填充膜可自(例如)環氧樹脂、丙烯酸酯、或基於矽之化學物質及彼等化學物質之硬化劑製得。底部填充材料之厚度可經調節以便可在層壓後完全或僅部分覆蓋金屬凸塊。在任一情形下，供應底部填充材料之量及形式應使得其完全填充半導體與預期基板間之空間。實際上，將在載體上提供底部填充材料並將其用釋放襯墊保護。因此，將以三層形式提供底部填充材料，其中順序為第一層係載體，例如撓性聚烯烴或聚醯亞胺膠帶，第二層係底部填充材料，且第三層係釋放襯墊。在即將使用之前，移除釋放襯墊並通常在底部填充料仍附接至載體時施加底部填充料。在將底部填充料施加至晶圓後，移除載體。
在本發明中，在切割膠帶上供應底部填充囊封劑。切割膠帶可呈薄片形式且包含基板膜及在基板膜之一側上之壓 敏性黏著層。在切割膠帶上佈置呈預切割成晶圓之大小及形狀形式的底部填充囊封劑。將釋放襯墊安裝於底部填充料上並使其與底部填充料及未由底部填充料覆蓋之切割膠帶中之彼等部分(由於底部填充料之預切割形狀)接觸。
參照該等圖進一步闡述本發明。在該等圖中，可以矽晶圓之作用面(含有金屬凸塊之面)向上或向下定向顯示切割膠帶、矽晶圓、金屬凸塊、底部填充料及保護性支撐物中之一或多個元件之總成。可以由專業人員確定之適於且可用於欲實施操作之任一定向處理該總成。切割膠帶、背研磨膠帶及底部填充料中之每一者均顯示無釋放襯墊。切割膠帶及背研磨膠帶在使用後丟棄。彼等熟習此項技術者應理解，通常使用釋放襯墊來保護切割膠帶或背研磨膠帶之壓敏性黏著劑，且在即將使用前移除釋放襯墊。繼續對層壓於晶圓之活性側上之底部填充層實施切割及結合步驟。
圖1繪示製備具有預施加底部填充料之具凸塊半導體用於切割之先前技術方法。製備具有複數個金屬凸塊11及保護性支撐物12之薄化半導體晶圓13。將晶圓、凸塊及保護性支撐物之總成支撐於(例如)真空夾盤台17上，並移除保護性支撐物12。將底部填充材料14層壓於晶圓之作用面上，圍繞並囊封金屬凸塊11。將切割膠帶15安裝於底部填充料上並將切割膠帶、底部填充料及具凸塊之晶圓的總成安裝於切割框(或夾具)16中，其中晶圓之背側向上定向且經暴露用於隨後切割。
圖2繪示本發明方法及更全面解釋可如何使用本發明方 法之額外步驟。製備在一個面上具有複數個金屬凸塊11及保護性支撐物12之薄化半導體晶圓13。晶圓、凸塊及保護性支撐物之總成支撐於(例如)真空夾盤台17上，並移除保護性支撐物12。將具有底部填充層14之切割膠帶15製備為組合切割膠帶/底部填充料18。將底部填充層14預切割成晶圓之形狀。將此組合切割膠帶/預切割底部填充料佈置於金屬凸塊及半導體晶圓13之作用面上，圍繞並囊封金屬凸塊11。將切割膠帶、底部填充料及凸起之晶圓的總成安裝於切割框16中，其中晶圓之背側向上定向且暴露用於隨後切割。此定向適於隱形切割。
因此，在一個實施例中，本發明係關於製備具有施加預切割底部填充料之薄化半導體晶圓用於切割的方法，該方法包含：(a)提供薄化矽半導體晶圓，該半導體晶圓在其作用面上具有複數個金屬凸塊及視情況垂直貫穿矽半導體晶圓之矽通孔；(b)在切割支撐膠帶上提供底部填充材料，其中將該底部填充材料預切割成半導體晶圓之形狀；(c)使該切割支撐膠帶上之底部填充材料與該半導體晶圓對準，並將該底部填充材料層壓至該半導體晶圓。
11‧‧‧金屬凸塊
12‧‧‧保護性支撐物
13‧‧‧薄化半導體晶圓
14‧‧‧底部填充材料
15‧‧‧切割膠帶
16‧‧‧切割框(或夾具)
17‧‧‧真空夾盤台
18‧‧‧組合切割膠帶/底部填充料
圖1繪示製備具有預施加底部填充料之薄化半導體晶圓準備用於切割之先前技術方法。
圖2繪示製備具有預施加底部填充料之薄化半導體晶圓準備用於切割之本發明方法，其具有一些額外製備步驟。
11‧‧‧金屬凸塊
12‧‧‧保護性支撐物
13‧‧‧薄化半導體晶圓
14‧‧‧底部填充材料
15‧‧‧切割膠帶
16‧‧‧切割框(或夾具)
17‧‧‧真空夾盤台
18‧‧‧組合切割膠帶/底部填充料

Claims (2)

  1. 一種製備具有施加底部填充料之薄化半導體晶圓用於切割的方法，其包含：(a)提供具有作用面及背側之薄化半導體晶圓，該半導體晶圓在其作用面上具有複數個金屬凸塊及視情況垂直貫穿該半導體晶圓之矽通孔；(b)在切割支撐膠帶上提供包含底部填充材料之物件，其中將該底部填充材料預切割成該半導體晶圓之形狀；(c)使該物件與該薄化半導體晶圓對準，並將該底部填充材料層壓至該作用面以形成總成；及(d)將該總成安裝在切割框中，並暴露該薄化半導體晶圓之背側以供後續切割，其中該物件於單一製備步驟中將該底部填充材料與該切割支撐膠帶同時供應至該薄化半導體晶圓。
  2. 一種底部填充材料，其經預切割為薄化半導體晶圓之尺寸及形狀，其中該底部填充材料支撐於切割膠帶上，及安裝釋放襯墊於該底部填充材料上，該釋放襯墊與該底部填充材料接觸，且該切割膠帶之一部分並未為該底部填充材料覆蓋，其中該釋放襯墊一經移除，該底部填充材料及該切割膠帶可在單一製備步驟中同時提供至該薄化半導體晶圓。
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US9362105B2 (en) 2016-06-07
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