WO2013161603A1 - 透明電極、電子デバイス、および透明電極の製造方法 - Google Patents
透明電極、電子デバイス、および透明電極の製造方法 Download PDFInfo
- Publication number
- WO2013161603A1 WO2013161603A1 PCT/JP2013/061174 JP2013061174W WO2013161603A1 WO 2013161603 A1 WO2013161603 A1 WO 2013161603A1 JP 2013061174 W JP2013061174 W JP 2013061174W WO 2013161603 A1 WO2013161603 A1 WO 2013161603A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- group
- ring
- layer
- nitrogen
- electrode
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/816—Multilayers, e.g. transparent multilayers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Definitions
- the present invention relates to a transparent electrode, an electronic device, and a method for producing the transparent electrode, and more particularly to a transparent electrode having both conductivity and light transmittance, an electronic device using the transparent electrode, and a method for producing the transparent electrode. .
- An organic electroluminescence device (so-called organic EL device) using electroluminescence (hereinafter referred to as EL) of an organic material is a thin-film type completely solid device capable of emitting light at a low voltage of several V to several tens V. It has many excellent features such as high brightness, high luminous efficiency, thinness, and light weight. For this reason, it has been attracting attention in recent years as surface light emitters such as backlights for various displays, display boards such as signboards and emergency lights, and illumination light sources.
- Such an organic electroluminescent element has a configuration in which a light emitting layer composed of an organic material is sandwiched between two electrodes, and emitted light generated in the light emitting layer passes through the electrode and is extracted outside. For this reason, at least one of the two electrodes is configured as a transparent electrode.
- an oxide semiconductor material such as indium tin oxide (SnO 2 —In 2 O 3 : Indium Tin Oxide: ITO) is generally used. Studies aiming at resistance have also been made (for example, see Patent Documents 1 and 2 below).
- ITO indium tin oxide
- the material cost is high, and it is necessary to anneal at about 300 ° C. after film formation in order to reduce resistance. Therefore, a configuration in which a metal material such as silver having high electrical conductivity is thinned, and a configuration in which conductivity is ensured with a thinner film thickness than silver alone by mixing aluminum with silver (for example, the following patent documents) 3).
- an object of the present invention is to provide a transparent electrode having sufficient conductivity and light transmittance, and to provide an electronic device whose performance is improved by using this transparent electrode.
- a nitrogen-containing layer formed using a compound containing a nitrogen atom, formed at a film formation rate of 0.3 nm / s or more;
- a transparent electrode layer provided adjacent to the nitrogen-containing layer, having a film thickness of 12 nm or less capable of measuring sheet resistance, and comprising an electrode layer made of silver or a silver-based alloy electrode.
- a nitrogen-containing layer composed of a compound containing nitrogen atoms; It is a layer formed adjacent to the nitrogen-containing layer within 2 minutes after the formation of the nitrogen-containing layer, and has a film thickness of 12 nm or less capable of measuring sheet resistance.
- a transparent electrode comprising: an electrode layer configured using an alloy as a component.
- a nitrogen-containing layer composed of a compound containing nitrogen atoms at a film formation rate of 0.3 nm / s or more; Forming on the nitrogen-containing layer an electrode layer having a film thickness of 12 nm or less capable of measuring sheet resistance and comprising silver or a silver-based alloy as a main component. Production method.
- a nitrogen-containing layer composed of a compound containing a nitrogen atom; Within 2 minutes after the formation of the nitrogen-containing layer, an electrode layer having a film thickness of 12 nm or less capable of measuring sheet resistance and made of silver or an alloy containing silver as a main component is included in the nitrogen-containing layer. And a step of forming a film adjacent to the layer.
- the transparent electrode of the present invention having the above-described configuration is provided with an electrode layer made of silver or an alloy containing silver as a main component adjacent to a nitrogen-containing layer formed using a compound containing a nitrogen atom. It is.
- the electrode layer when the electrode layer is formed adjacent to the nitrogen-containing layer, the silver atoms constituting the electrode layer interact with the compound containing the nitrogen atoms constituting the nitrogen-containing layer, so that silver aggregates. It becomes easy to be comprised as a continuous film of silver. Therefore, the electrode layer using silver is a continuous film. Further, as will be described in the following examples, the electrode layer becomes a film with higher continuity by forming the nitrogen-containing layer at a film formation speed of 0.3 nm / s or more.
- the electrode layer is more continuous as will be described in the following examples. It has been confirmed that it is configured as a high film.
- the electrode layer has a film thickness of 12 nm or less capable of measuring the sheet resistance.
- the electrode layer has a low light absorption component or reflection component while ensuring practicality as a film for an electrode.
- the transparent electrode provided with such an electrode layer has a high continuity while ensuring light transmittance because the electrode layer that substantially functions as an electrode has a thin film thickness. Since it is a film
- FIG. 1 is a cross-sectional configuration diagram showing a first example of an organic electroluminescent element using a transparent electrode of the present invention. It is a cross-sectional block diagram which shows the 2nd example of the organic electroluminescent element using the transparent electrode of this invention. It is a cross-sectional block diagram which shows the 3rd example of the organic electroluminescent element using the transparent electrode of this invention. It is a cross-sectional block diagram of the illuminating device which enlarged the light emission surface using the organic electroluminescent element. 2 is a SEM image of a transparent electrode of Sample 1-1 produced in Example 1.
- 2 is a SEM image of a transparent electrode of Sample 1-2 produced in Example 1.
- 3 is a SEM image of a transparent electrode of Sample 1-3 produced in Example 1.
- 4 is a SEM image of a transparent electrode of Sample 1-4 produced in Example 1.
- 3 is a SEM image of a transparent electrode of Sample 1-5 produced in Example 1.
- 2 is a SEM image of a transparent electrode of Sample 1-6 produced in Example 1.
- 2 is an SEM image of a transparent electrode of Sample 1-7 produced in Example 1.
- 2 is a SEM image of a transparent electrode of Sample 1-8 produced in Example 1.
- 2 is a SEM image of a transparent electrode of Sample 1-9 produced in Example 1.
- 3 is a SEM image of a transparent electrode of Sample 2-1 produced in Example 2.
- 4 is a SEM image of a transparent electrode of Sample 2-2 produced in Example 2.
- 4 is a SEM image of a transparent electrode of Sample 2-3 produced in Example 2.
- 4 is a SEM image of a transparent electrode of Sample 2-4 produced in Example 2.
- 3 is a SEM image of a transparent electrode of Sample 2-5 produced in Example 2.
- 4 is a SEM image of a transparent electrode of Sample 2-6 produced in Example 2.
- 6 is a SEM image of a transparent electrode of Sample 2-7 produced in Example 2.
- 4 is a SEM image of a transparent electrode of Sample 2-8 produced in Example 2.
- 4 is an SEM image of a transparent electrode of Sample 2-9 produced in Example 2.
- FIG. 1 is a schematic cross-sectional view showing one structural example of the transparent electrode of the present invention.
- the transparent electrode 1 has a two-layer structure in which a nitrogen-containing layer 1a and an electrode layer 1b provided adjacent to the nitrogen-containing layer 1a are laminated. 1a and electrode layer 1b are provided in this order.
- the nitrogen-containing layer 1a is a layer formed using a compound containing nitrogen atoms
- the electrode layer 1b is a layer formed using silver or an alloy containing silver as a main component.
- the present embodiment is particularly characterized in that the nitrogen-containing layer 1a is formed at a predetermined film formation rate, as will be described in detail later. Further, as described in detail later, the electrode layer 1b may be formed adjacent to the nitrogen-containing layer 1a within a predetermined time after the formation of the nitrogen-containing layer 1a.
- the electrode layer 1b is a layer composed of silver or an alloy containing silver as a main component, and is a layer provided adjacent to the nitrogen-containing layer 1a as shown in the schematic cross-sectional view of FIG. .
- This electrode layer 1b has a film thickness of 12 nm or less capable of measuring the sheet resistance.
- the metal constituting the electrode layer 1b has two-dimensional continuity in the in-plane direction, and serves as an electrode film. Practicality is ensured.
- the electrode layer 1b has a film thickness of 12 nm or less, so that the absorption component or reflection component in the electrode layer 1b is kept low, and the light transmittance of the transparent electrode 1 is ensured.
- the electrode layer 1b may be a layer formed adjacent to the nitrogen-containing layer 1a within 2 minutes after the formation of the nitrogen-containing layer 1a. More preferably, the electrode layer 1b is a layer formed adjacent to the nitrogen-containing layer 1a within 1 minute after the formation of the nitrogen-containing layer 1a.
- the metal constituting the electrode layer 1b is, for example, silver (Ag) or an alloy containing silver as a main component.
- Silver (Ag) may contain palladium (Pd), copper (Cu), gold (Au), etc. added to ensure the stability of silver, and the purity of silver is 99% or more.
- An alloy containing silver as a main component has a silver content of 50% or more.
- alloys include silver magnesium (AgMg), silver copper (AgCu), silver palladium (AgPd), silver palladium copper (AgPdCu), silver indium (AgIn), silver gold (AgAu), silver aluminum (AgAl) Silver zinc (AgZn), silver tin (AgSn), silver platinum (AgPt), silver titanium (AgTi), silver bismuth (AgBi), and the like.
- the electrode layer 1b as described above may have a structure in which silver or an alloy layer mainly composed of silver is divided into a plurality of layers as necessary.
- the nitrogen-containing layer 1a is a layer formed using a compound containing a nitrogen atom, which is formed at a film formation rate of 0.3 nm / s or more. More preferably, the nitrogen-containing layer 1a is a layer formed at a film formation rate of 0.5 nm / s or more. Such a nitrogen-containing layer 1a is provided adjacent to the electrode layer 1b.
- the compound containing a nitrogen atom constituting the nitrogen-containing layer 1a is not particularly limited as long as it is a compound containing a nitrogen atom in the molecule, but a compound having a heterocycle having a nitrogen atom as a heteroatom is preferable.
- heterocycle having a nitrogen atom as a hetero atom examples include aziridine, azirine, azetidine, azeto, azolidine, azole, azinane, pyridine, azepan, azepine, imidazole, pyrazole, oxazole, thiazole, imidazoline, pyrazine, morpholine, thiazine, indole, Examples include isoindole, benzimidazole, purine, quinoline, isoquinoline, quinoxaline, cinnoline, pteridine, acridine, carbazole, benzo-C-cinnoline, porphyrin, chlorin, choline and the like.
- n1 represents an integer of 1 or more
- Y1 represents a substituent when n1 is 1, and represents a simple bond or an n1-valent linking group when n1 is 2 or more
- Ar1 represents a group represented by the general formula (A) described later.
- n1 is 2 or more
- a plurality of Ar1s may be the same or different.
- the compound represented by the general formula (1) has at least two condensed aromatic heterocycles in which three or more rings are condensed in the molecule.
- examples of the substituent represented by Y1 include an alkyl group (for example, methyl group, ethyl group, propyl group, isopropyl group, tert-butyl group, pentyl group, hexyl group, octyl group, Dodecyl group, tridecyl group, tetradecyl group, pentadecyl group etc.), cycloalkyl group (eg cyclopentyl group, cyclohexyl group etc.), alkenyl group (eg vinyl group, allyl group etc.), alkynyl group (eg ethynyl group, propargyl etc.) Group), aromatic hydrocarbon group (also called aromatic carbocyclic group, aryl group, etc.), for example, phenyl group, p-chlorophenyl group, mesityl group, tolyl group, xylyl group, naphthyl group, an alkyl group (
- substituents may be further substituted with the above substituents.
- a plurality of these substituents may be bonded to each other to form a ring.
- n1-valent linking group represented by Y1 in the general formula (1) examples include a divalent linking group, a trivalent linking group, and a tetravalent linking group.
- an alkylene group for example, ethylene group, trimethylene group, tetramethylene group, propylene group, ethylethylene group, pentamethylene group, hexamethylene group, 2,2,4-trimethylhexamethylene group, heptamethylene group, octamethylene group, nonamethylene group, decamethylene group, undecamethylene group, dodecamethylene group, cyclohexylene group (for example, 1,6-cyclohexanediyl group, etc.), Cyclopentylene group (for example, 1,5-cyclopentanediyl group and the like), alkenylene group (for example, vinylene group, propenylene group, butenylene group, pentenylene group, 1-methylvinylene group, 1-methylpropenylene group, 2-methylpropenylene group, 1-methylpentenylene group, 3-methyl Pentenylene group, 1-ethylvinylene group, 1-
- acridine ring benzoquinoline ring, carbazole ring, phenazine ring, phenanthridine ring, phenanthroline ring, carboline ring, cyclazine ring, kindrin ring, tepenidine ring, quinindrin ring, triphenodithia Gin ring, triphenodioxazine ring, phenanthrazine ring, anthrazine ring, perimidine ring, diazacarbazole ring (representing any one of carbon atoms constituting carboline ring replaced by nitrogen atom), phenanthroline ring, dibenzofuran Ring, dibenzothiophene ring, naphthofuran ring, naphthothiophene ring Benzodifuran ring, benzodithiophene ring, naphthodifuran ring, naphthodithiophene ring, anthrafur
- examples of the trivalent linking group represented by Y1 include ethanetriyl group, propanetriyl group, butanetriyl group, pentanetriyl group, hexanetriyl group, heptanetriyl group, and octanetriyl.
- the tetravalent linking group represented by Y1 is a group in which one trivalent group is further added to the above trivalent group, such as a propanediylidene group, 1,3-propane.
- each of the above divalent linking group, trivalent linking group, and tetravalent linking group may further have a substituent represented by Y1 in the general formula (1).
- Y1 preferably represents a group derived from a condensed aromatic heterocycle formed by condensation of three or more rings, and the three or more rings.
- a condensed aromatic heterocyclic ring formed by condensing a dibenzofuran ring or a dibenzothiophene ring is preferable.
- n1 is preferably 2 or more.
- the compound represented by the general formula (1) has at least two condensed aromatic heterocycles formed by condensation of three or more rings in the molecule.
- Y1 represents an n1-valent linking group
- Y1 is preferably non-conjugated in order to keep the triplet excitation energy of the compound represented by the general formula (1) high, and further, Tg (glass transition In view of improving the point, also referred to as glass transition temperature, it is preferably composed of an aromatic ring (aromatic hydrocarbon ring + aromatic heterocycle).
- non-conjugated means that the linking group cannot be expressed by repeating a single bond (also referred to as a single bond) and a double bond, or the conjugation between aromatic rings constituting the linking group is sterically cleaved. Means.
- Ar1 in the general formula (1) represents a group represented by the following general formula (A).
- X represents —N (R) —, —O—, —S— or —Si (R) (R ′) —
- E1 to E8 represent —C (R1) ⁇ or —N ⁇ .
- R, R ′ and R1 each represent a hydrogen atom, a substituent or a linking site with Y1. * Represents a linking site with Y1.
- Y2 represents a simple bond or a divalent linking group.
- Y3 and Y4 each represent a group derived from a 5-membered or 6-membered aromatic ring, and at least one represents a group derived from an aromatic heterocycle containing a nitrogen atom as a ring constituent atom.
- n2 represents an integer of 1 to 4.
- the divalent linking group represented by Y2 has the same meaning as the divalent linking group represented by Y1 in the general formula (1).
- At least one of the groups derived from a 5-membered or 6-membered aromatic ring represented by Y3 and Y4 represents a group derived from an aromatic heterocycle containing a nitrogen atom as a ring constituent atom
- the aromatic heterocycle containing a nitrogen atom as the ring constituent atom include an oxazole ring, a pyrrole ring, a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, a diazine ring, a triazine ring, an imidazole ring, an isoxazole ring, a pyrazole ring, Examples include a triazole ring.
- the group represented by Y3 is preferably a group derived from the above 6-membered aromatic ring, and more preferably a group derived from a benzene ring.
- the group represented by Y4 is preferably a group derived from the 6-membered aromatic ring, more preferably an aromatic heterocycle containing a nitrogen atom as a ring constituent atom. Particularly preferably, Y4 is a group derived from a pyridine ring.
- X represents —N (R) —, —O—, —S— or —Si (R) (R ′) —
- R, R 'and R1 each represent a hydrogen atom, a substituent, or a linking site with Y1.
- Y2 represents a simple bond or a divalent linking group.
- E11 to E20 each represent —C (R2) ⁇ or —N ⁇ , and at least one represents —N ⁇ .
- R2 represents a hydrogen atom, a substituent or a linking site. However, at least one of E11 and E12 represents —C (R2) ⁇ , and R2 represents a linking site.
- n2 represents an integer of 1 to 4. * Represents a linking site with Y1 in the general formula (1).
- X represents —N (R) —, —O—, —S— or —Si (R) (R ′) —
- R, R 'and R1 each represent a hydrogen atom, a substituent, or a linking site with Y1.
- Y2 represents a simple bond or a divalent linking group.
- R2 represents a hydrogen atom, a substituent or a linking site
- R3 and R4 represent a hydrogen atom or a substituent.
- at least one of E21 or E22 represents —C (R2) ⁇
- R2 represents a linking site
- n2 represents an integer of 1 to 4. * Represents a linking site with Y1 in the general formula (1).
- X represents —N (R) —, —O—, —S— or —Si (R) (R ′) —
- R, R 'and R1 each represent a hydrogen atom, a substituent, or a linking site with Y1.
- Y2 represents a simple bond or a divalent linking group.
- R2 represents a hydrogen atom, a substituent or a linking site
- R3 and R4 represent a hydrogen atom or a substituent.
- at least one of E32 or E33 is represented by —C (R2) ⁇
- R2 represents a linking site
- n2 represents an integer of 1 to 4. * Represents a linking site with Y1 in the general formula (1).
- X represents —N (R) —, —O—, —S— or —Si (R) (R ′) —
- R, R 'and R1 each represent a hydrogen atom, a substituent, or a linking site with Y1.
- Y2 represents a simple bond or a divalent linking group.
- E41 to E50 each represent —C (R2) ⁇ , —N ⁇ , —O—, —S— or —Si (R3) (R4) —, and at least one of them represents —N ⁇ .
- R2 represents a hydrogen atom, a substituent or a linking site
- R3 and R4 represent a hydrogen atom or a substituent.
- n2 represents an integer of 1 to 4. * Represents a linking site with Y1 in the general formula (1).
- the divalent linking group represented by Y2 is a divalent group represented by Y1 in the general formula (1). It is synonymous with the linking group.
- Y5 represents a divalent linking group composed of an arylene group, a heteroarylene group, or a combination thereof.
- E51 to E66 each represent —C (R3) ⁇ or —N ⁇ , and R3 represents a hydrogen atom or a substituent.
- Y6 to Y9 each represents a group derived from an aromatic hydrocarbon ring or a group derived from an aromatic heterocycle, and at least one of Y6 or Y7 and at least one of Y8 or Y9 is an aromatic group containing an N atom.
- n3 and n4 represent an integer of 0 to 4, and n3 + n4 is an integer of 2 or more.
- the arylene group and heteroarylene group represented by Y5 are the arylene group and heteroarylene group described as an example of the divalent linking group represented by Y1 in general formula (1). Are synonymous with each other.
- the divalent linking group comprising an arylene group, a heteroarylene group or a combination thereof represented by Y5
- a condensed aromatic heterocycle formed by condensation of three or more rings among the heteroarylene groups, a condensed aromatic heterocycle formed by condensation of three or more rings.
- a group derived from a condensed aromatic heterocycle formed by condensation of three or more rings is preferably included, and the group derived from a dibenzofuran ring or a dibenzothiophene ring is preferable.
- Y5 a condensed aromatic heterocycle formed by condensation of three or more rings.
- a group derived from a condensed aromatic heterocycle formed by condensation of three or more rings is preferably included, and the group derived from a dibenzofuran ring or a dibenzothiophene ring is preferable.
- Y6 to Y9 are each an aromatic hydrocarbon ring used for forming a group derived from an aromatic hydrocarbon ring, such as a benzene ring, a biphenyl ring, a naphthalene ring, an azulene ring, an anthracene ring Phenanthrene ring, pyrene ring, chrysene ring, naphthacene ring, triphenylene ring, o-terphenyl ring, m-terphenyl ring, p-terphenyl ring, acenaphthene ring, coronene ring, fluorene ring, fluoranthrene ring, naphthacene ring , Pentacene ring, perylene ring, pentaphen ring, picene ring, pyrene ring, pyranthrene ring, anthraanthrene ring, and the like.
- aromatic hydrocarbon ring may have a substituent represented by Y1 in the general formula (1).
- Y6 to Y9 are each an aromatic heterocycle used for forming a group derived from an aromatic heterocycle, such as a furan ring, a thiophene ring, an oxazole ring, a pyrrole ring, or a pyridine ring.
- aromatic hydrocarbon ring may have a substituent represented by Y1 in the general formula (1).
- an aromatic heterocycle containing an N atom used for forming a group derived from an aromatic heterocycle containing an N atom represented by at least one of Y6 or Y7 and at least one of Y8 or Y9.
- the ring include an oxazole ring, a pyrrole ring, a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, a triazine ring, a benzimidazole ring, an oxadiazole ring, a triazole ring, an imidazole ring, a pyrazole ring, a thiazole ring, and an indole ring.
- Indazole ring Indazole ring, benzimidazole ring, benzothiazole ring, benzoxazole ring, quinoxaline ring, quinazoline ring, cinnoline ring, quinoline ring, isoquinoline ring, phthalazine ring, naphthyridine ring, carbazole ring, carboline ring, diazacarbazole ring (carboline ring) Configure It shows a ring in which one atom is further substituted with a nitrogen atom), and the like.
- the groups represented by Y7 and Y9 each preferably represent a group derived from a pyridine ring.
- the groups represented by Y6 and Y8 each preferably represent a group derived from a benzene ring.
- Y5 represents a divalent linking group composed of an arylene group, a heteroarylene group, or a combination thereof.
- E51 to E66 and E71 to E88 each represent —C (R3) ⁇ or —N ⁇ , and R3 represents a hydrogen atom or a substituent.
- R3 represents a hydrogen atom or a substituent.
- n3 and n4 represent an integer of 0 to 4
- n3 + n4 is an integer of 2 or more.
- the arylene group and heteroarylene group represented by Y5 are the arylene group and heteroarylene group described as an example of the divalent linking group represented by Y1 in general formula (1). Are synonymous with each other.
- the divalent linking group comprising an arylene group, a heteroarylene group or a combination thereof represented by Y5
- a condensed aromatic heterocycle formed by condensation of three or more rings among the heteroarylene groups, a condensed aromatic heterocycle formed by condensation of three or more rings.
- a group derived from a condensed aromatic heterocycle formed by condensation of three or more rings is preferably included, and the group derived from a dibenzofuran ring or a dibenzothiophene ring is preferable.
- Y5 a condensed aromatic heterocycle formed by condensation of three or more rings.
- a group derived from a condensed aromatic heterocycle formed by condensation of three or more rings is preferably included, and the group derived from a dibenzofuran ring or a dibenzothiophene ring is preferable.
- E71 to E74 and E80 to E83 are each represented by —C (R3) ⁇ .
- At least one of T11 and T12 is a nitrogen atom
- at least one of T21 to T25 is a nitrogen atom
- at least one of T31 to T35 is Nitrogen atom.
- R represents a substituent.
- a substituent the thing similar to Y1 of General formula (1) is mentioned. Some of these substituents may be further substituted with the above substituents.
- Step 1 (Synthesis of Intermediate 1) Under a nitrogen atmosphere, 2,8-dibromodibenzofuran (1.0 mol), carbazole (2.0 mol), copper powder (3.0 mol), potassium carbonate (1.5 mol), DMAc (dimethylacetamide) 300 ml Mixed in and stirred at 130 ° C. for 24 hours.
- Step 2 (Synthesis of Intermediate 2)
- Intermediate 1 (0.5 mol) was dissolved in 100 ml of DMF (dimethylformamide) at room temperature in the atmosphere, NBS (N-bromosuccinimide) (2.0 mol) was added, and the mixture was stirred overnight at room temperature. The resulting precipitate was filtered and washed with methanol, yielding intermediate 2 in 92% yield.
- Step 3 (Synthesis of Compound 5) Under a nitrogen atmosphere, intermediate 2 (0.25 mol), 2-phenylpyridine (1.0 mol), ruthenium complex [( ⁇ 6 -C 6 H 6 ) RuCl 2 ] 2 (0.05 mol), triphenyl Phosphine (0.2 mol) and potassium carbonate (12 mol) were mixed in 3 L of NMP (N-methyl-2-pyrrolidone) and stirred at 140 ° C. overnight.
- NMP N-methyl-2-pyrrolidone
- the substrate 11 on which the transparent electrode 1 as described above is formed examples include, but are not limited to, glass and plastic. Further, the substrate 11 may be transparent or opaque. When the transparent electrode 1 of the present invention is used in an electronic device that extracts light from the substrate 11 side, the substrate 11 is preferably transparent. Examples of the transparent substrate 11 that is preferably used include glass, quartz, and a transparent resin film.
- the glass examples include silica glass, soda lime silica glass, lead glass, borosilicate glass, and alkali-free glass. From the viewpoints of adhesion, durability, and smoothness with the nitrogen-containing layer 1a, the surface of these glass materials is subjected to physical treatment such as polishing, a coating made of an inorganic material or an organic material, if necessary, A hybrid film combining these films is formed.
- polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyethylene, polypropylene, cellophane, cellulose diacetate, cellulose triacetate, cellulose acetate butyrate, cellulose acetate propionate (CAP), Cellulose esters such as cellulose acetate phthalate (TAC) and cellulose nitrate or derivatives thereof, polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol, syndiotactic polystyrene, polycarbonate, norbornene resin, polymethylpentene, polyether ketone, polyimide , Polyethersulfone (PES), polyphenylene sulfide, polysulfone , Polyetherimide, polyetherketoneimide, polyamide, fluororesin, nylon, polymethylmethacrylate, acrylic or polyarylates, cyclone resins such as Arton (trade name JSR) or Appel (trade name Mits
- a film made of an inorganic material or an organic material or a hybrid film combining these films may be formed on the surface of the resin film.
- Such coatings and hybrid coatings have a water vapor transmission rate (25 ⁇ 0.5 ° C., relative humidity 90 ⁇ 2% RH) of 0.01 g / (measured by a method in accordance with JIS-K-7129-1992. m 2 ⁇ 24 hours) or less of a barrier film (also referred to as a barrier film or the like) is preferable.
- the oxygen permeability measured by a method according to JIS-K-7126-1987 is 10 ⁇ 3 ml / (m 2 ⁇ 24 hours ⁇ atm) or less, and the water vapor permeability is 10 ⁇ 5 g / (m 2 ⁇ 24 hours) or less high barrier film is preferable.
- the material for forming the barrier film as described above may be any material that has a function of suppressing intrusion of elements that cause deterioration of elements such as moisture and oxygen.
- silicon oxide, silicon dioxide, silicon nitride, or the like is used. be able to.
- the method for forming the barrier film is not particularly limited.
- the vacuum deposition method, the sputtering method, the reactive sputtering method, the molecular beam epitaxy method, the cluster ion beam method, the ion plating method, the plasma polymerization method, the atmospheric pressure plasma weighting can be used, but an atmospheric pressure plasma polymerization method described in JP-A No. 2004-68143 is particularly preferable.
- the base material 11 is opaque
- a metal substrate such as aluminum or stainless steel, an opaque resin substrate, a ceramic substrate, or the like can be used. These substrates may be in the form of a film that bends flexibly.
- the transparent electrode 1 which has the above electrode layers 1b
- the upper part of the electrode layer 1b may be covered with the protective film, or another electroconductive layer may be laminated
- the protective film and the conductive layer have light transmittance so as not to impair the light transmittance of the electrode layer 1b.
- the transparent electrode 1 has been described as a laminated structure of the nitrogen-containing layer 1a and the electrode layer 1b.
- the transparent electrode 1 may have a single-layer structure including only the electrode layer 1b.
- the nitrogen-containing layer 1a is formed on the substrate 11 at a film forming speed of 0.3 nm / s or more. More preferably, the nitrogen-containing layer 1a is formed at a film formation rate of 0.5 nm / s or more.
- the nitrogen-containing layer 1a is formed by a method using a wet process such as a coating method, an inkjet method, a coating method, or a dip method, a method using a dry process such as a vapor deposition method (resistance heating, EB method, etc.), a CVD method, or the like. Is mentioned. Among these, the vapor deposition method is preferably applied from the viewpoint that a homogeneous film is easily obtained and pinholes are hardly generated.
- an electrode layer 1b composed of silver or an alloy containing silver as a main component is formed adjacent to the nitrogen-containing layer 1a.
- the electrode layer 1b is formed using a wet process such as a coating method, an inkjet method, a coating method, or a dip method, or a dry process such as a vapor deposition method (resistance heating, EB method, etc.), a sputtering method, or a CVD method.
- a vapor deposition method resistance heating, EB method, etc.
- a sputtering method or a CVD method.
- the vapor deposition method is preferably applied from the viewpoint that a homogeneous film is easily obtained and pinholes are hardly generated.
- the electrode layer 1b may be deposited adjacent to the nitrogen-containing layer 1a within 2 minutes after the deposition of the nitrogen-containing layer 1a. More preferably, the electrode layer 1b is formed adjacent to the nitrogen-containing layer 1a within 1 minute after the formation of the nitrogen-containing layer 1a.
- the electrode layer 1b when the electrode layer 1b is formed, it is preferable to form the film at a film formation speed of 0.3 nm / s or more.
- the electrode layer 1b By forming the electrode layer 1b at a predetermined film formation rate adjacent to the nitrogen-containing layer 1a formed at a predetermined film formation rate, the electrode layer 1b can be formed with a more continuous film. it can.
- the transparent electrode 1 having the above configuration is configured such that an electrode layer 1b made of silver or an alloy containing silver as a main component is provided adjacent to a nitrogen-containing layer 1a formed using a compound containing nitrogen atoms. It is.
- the silver atoms constituting the electrode layer 1b interact with the compound containing the nitrogen atoms constituting the nitrogen-containing layer 1a, so that the silver atoms The diffusion distance on the surface of the nitrogen-containing layer 1a decreases, and aggregation of silver is suppressed.
- a silver thin film that is easily isolated in an island shape by film growth of a nuclear growth type is a single layer growth type (Frank-van der Merwe: FM type) film growth.
- a continuous film is formed. Therefore, the electrode layer 1b having a uniform film thickness can be obtained even though the film thickness is small.
- the electrode layer 1b is a layer formed adjacent to the nitrogen-containing layer 1b within 2 minutes after the formation of the nitrogen-containing layer 1a, more preferably 1 minute after the formation of the nitrogen-containing layer 1a. It is confirmed that the electrode layer 1b is a more continuous film as will be described in detail later in the embodiment when the layer is formed adjacent to the nitrogen-containing layer 1b. Has been.
- the nitrogen-containing layer 1a is a layer formed at a film forming speed of 0.3 nm / s or more. More preferably, the layer is deposited at a deposition rate of 0.5 nm / s or more. As will be described in detail in a later example, the higher the deposition rate of the nitrogen-containing layer 1a, the more the electrode layer 1b provided adjacent to the nitrogen-containing layer 1a becomes a more continuous film. It has been confirmed. The following hypothesis is considered as the reason. That is, as the deposition rate of the nitrogen-containing layer 1a increases, the surface of the deposited nitrogen-containing layer 1a becomes more unstable with more defects, and silver atoms constituting the electrode layer 1b constitute the nitrogen-containing layer 1a. This is presumably because it becomes easier to interact with compounds that contain nitrogen atoms.
- the electrode layer 1b constituting the transparent electrode 1 has a film thickness of 12 nm or less capable of measuring the sheet resistance.
- the electrode layer 1b has a light absorption component or a reflection component suppressed to a low level while ensuring practicality as an electrode film.
- the electrode layer 1b having such a thin film thickness has a uniform film thickness and continuity by being provided adjacent to the nitrogen-containing layer 1a as described above. Therefore, although the electrode layer 1b is an ultrathin film having a thickness of 12 nm or less as described above, the electrode layer 1b has conductivity capable of reliably measuring the sheet resistance.
- the nitrogen-containing layer 1a is formed at a film formation rate of 0.3 nm / s or more, and the electrode layer 1b is provided adjacent thereto. It was also confirmed from the fact that the electrode layer 1b capable of measuring the sheet resistance while being an ultrathin film was formed. In addition, even when the electrode layer 1b is formed adjacent to the nitrogen-containing layer 1a within 2 minutes after the formation of the nitrogen-containing layer 1a as described above, the electrode layer 1b has a uniform film thickness and continuity, However, it has been confirmed that the sheet resistance can be measured.
- the electrode layer 1b that substantially functions as an electrode has a thin film thickness, while ensuring light transmission, Since the conductivity is ensured by being a high film, it is possible to achieve both improvement in conductivity and improvement in light transmittance.
- Such a transparent electrode 1 is low in cost because it does not use indium (In), which is a rare metal, and has excellent long-term reliability because it does not use a chemically unstable material such as ZnO. Yes.
- the transparent electrode 1 having the above-described configuration can be used for various electronic devices.
- Examples of electronic devices include organic electroluminescent elements, LEDs (light emitting diodes), liquid crystal elements, solar cells, touch panels, etc.
- As electrode members that require light transmission in these electronic devices A transparent electrode 1 can be used.
- an organic electroluminescent element using transparent electrodes as an anode and a cathode will be described.
- FIG. 3 is a cross-sectional configuration diagram showing a first example of an organic electroluminescent element using the transparent electrode 1 described above as an example of the electronic device of the present invention. The configuration of the organic electroluminescent element will be described below based on this figure.
- the organic electroluminescent element EL-1 shown in FIG. 3 is provided on the transparent substrate 13, and in order from the transparent substrate 13 side, the light-emitting functional layer 3 configured using the transparent electrode 1, an organic material, and the like, and a counter electrode.
- the electrode 5-1 is laminated in this order.
- the organic electroluminescent element EL-1 is characterized in that the transparent electrode 1 of the present invention described above is used as the transparent electrode 1. Therefore, the organic electroluminescent element EL-1 is configured to take out the generated light (hereinafter referred to as emitted light h) from at least the transparent substrate 13 side.
- the layer structure of the organic electroluminescent element EL-1 is not limited and may be a general layer structure.
- the transparent electrode 1 functions as an anode (that is, an anode)
- the counter electrode 5-1 functions as a cathode (that is, a cathode).
- the light emitting functional layer 3 has a structure in which a hole injection layer 3a / a hole transport layer 3b / a light emitting layer 3c / an electron transport layer 3d / an electron injection layer 3e are stacked in this order from the transparent electrode 1 side which is an anode.
- the hole injection layer 3a and the hole transport layer 3b may be provided as a hole transport / injection layer.
- the electron transport layer 3d and the electron injection layer 3e may be provided as an electron transport / injection layer.
- the electron injection layer 3e may be made of an inorganic material.
- the light emitting functional layer 3 may be laminated with a hole blocking layer, an electron blocking layer, or the like as required.
- the light emitting layer 3c may have a structure in which each color light emitting layer that generates emitted light in each wavelength region is laminated, and each of these color light emitting layers is laminated via a non-light emitting intermediate layer.
- the intermediate layer may function as a hole blocking layer and an electron blocking layer.
- the counter electrode 5-1 as a cathode may also have a laminated structure as required. In such a configuration, only a portion where the light emitting functional layer 3 is sandwiched between the transparent electrode 1 and the counter electrode 5-1 becomes a light emitting region in the organic electroluminescent element EL-1.
- the auxiliary electrode 15 may be provided in contact with the electrode layer 1 b of the transparent electrode 1 for the purpose of reducing the resistance of the transparent electrode 1.
- the organic electroluminescent element EL-1 having the above-described configuration is formed of a sealing material 17 described later on the transparent substrate 13 for the purpose of preventing deterioration of the light emitting functional layer 3 formed using an organic material or the like. It is sealed.
- the sealing material 17 is fixed to the transparent substrate 13 side with an adhesive 19.
- the terminal portions of the transparent electrode 1 and the counter electrode 5-1 are provided on the transparent substrate 13 in a state of being exposed from the sealing material 17 while being insulated from each other by the light emitting functional layer 3. To do.
- the details of the main layers for constituting the organic electroluminescent element EL-1 described above are as follows: the transparent substrate 13, the transparent electrode 1, the counter electrode 5-1, the light emitting layer 3c of the light emitting functional layer 3, and the light emitting functional layer 3.
- the other layers, the auxiliary electrode 15, and the sealing material 17 will be described in this order. Thereafter, a method for producing the organic electroluminescent element EL-1 will be described.
- the transparent substrate 13 is the base material 11 on which the transparent electrode 1 of the present invention described above is provided, and the transparent base material 11 having light transmittance among the base materials 11 described above is used.
- the transparent electrode 1 is the transparent electrode 1 of the present invention described above, and has a configuration in which the nitrogen-containing layer 1a and the electrode layer 1b are sequentially formed from the transparent substrate 13 side.
- the transparent electrode 1 functions as an anode, and the electrode layer 1b is a substantial anode.
- the counter electrode 5-1 is an electrode film that functions as a cathode for supplying electrons to the light emitting functional layer 3, and a metal, an alloy, an organic or inorganic conductive compound, and a mixture thereof are used. Specifically, aluminum, silver, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, indium, lithium / aluminum mixture, rare earth metal, ITO, ZnO, TiO 2 , An oxide semiconductor such as SnO 2 can be given.
- the counter electrode 5-1 can be produced by forming a thin film of these conductive materials by a method such as vapor deposition or sputtering.
- the sheet resistance as the counter electrode 5-1 is several hundred ⁇ / sq.
- the film thickness is usually selected from the range of 5 nm to 5 ⁇ m, preferably 5 nm to 200 nm.
- the organic electroluminescent element EL-1 is a device that takes out the emitted light h from the counter electrode 5-1, the conductive material having good light transmittance among the conductive materials described above is used.
- the counter electrode 5-1 may be configured by selection.
- the light emitting layer 3c used in the present invention contains a phosphorescent compound as a light emitting material.
- the light emitting layer 3c is a layer that emits light by recombination of electrons injected from the electrode or the electron transport layer 3d and holes injected from the hole transport layer 3b, and the light emitting portion is the light emitting layer 3c. Even within the layer, it may be the interface between the light emitting layer 3c and the adjacent layer.
- the light emitting layer 3c is not particularly limited in its configuration as long as the light emitting material contained satisfies the light emission requirements. Moreover, there may be a plurality of layers having the same emission spectrum and emission maximum wavelength. In this case, it is preferable to have a non-light emitting intermediate layer (not shown) between the light emitting layers 3c.
- the total thickness of the light emitting layer 3c is preferably in the range of 1 to 100 nm, more preferably 1 to 30 nm because a lower driving voltage can be obtained.
- the sum total of the film thickness of the light emitting layer 3c is a film thickness also including the said intermediate
- the thickness of each light emitting layer is preferably adjusted to a range of 1 to 50 nm, more preferably adjusted to a range of 1 to 20 nm.
- the plurality of stacked light emitting layers correspond to blue, green, and red light emitting colors, there is no particular limitation on the relationship between the film thicknesses of the blue, green, and red light emitting layers.
- the light emitting layer 3c as described above is formed by forming a light emitting material or a host compound described later by, for example, a known thin film forming method such as a vacuum deposition method, a spin coating method, a casting method, an LB method, or an ink jet method. be able to.
- a known thin film forming method such as a vacuum deposition method, a spin coating method, a casting method, an LB method, or an ink jet method. be able to.
- the light emitting layer 3c may be a mixture of a plurality of light emitting materials, or a phosphorescent light emitting material and a fluorescent light emitting material (also referred to as a fluorescent dopant or a fluorescent compound) may be mixed and used in the same light emitting layer 3c.
- the structure of the light emitting layer 3c preferably contains a host compound (also referred to as a light emitting host or the like) and a light emitting material (also referred to as a light emitting dopant compound) and emits light from the light emitting material.
- a host compound also referred to as a light emitting host or the like
- a light emitting material also referred to as a light emitting dopant compound
- a compound having a phosphorescence quantum yield of phosphorescence emission at room temperature (25 ° C.) of less than 0.1 is preferable. More preferably, the phosphorescence quantum yield is less than 0.01. Moreover, it is preferable that the volume ratio in the layer is 50% or more among the compounds contained in the light emitting layer 3c.
- a known host compound may be used alone, or a plurality of types may be used. By using a plurality of types of host compounds, it is possible to adjust the movement of charges, and the efficiency of the organic electroluminescent element EL-1 can be increased. In addition, by using a plurality of kinds of light emitting materials described later, it is possible to mix different light emission, thereby obtaining an arbitrary light emission color.
- the host compound used may be a conventionally known low molecular compound, a high molecular compound having a repeating unit, or a low molecular compound having a polymerizable group such as a vinyl group or an epoxy group (evaporation polymerizable light emitting host). .
- the known host compound a compound having a hole transporting ability and an electron transporting ability, preventing an increase in the wavelength of light emission and having a high Tg (glass transition temperature) is preferable.
- the glass transition point (Tg) here is a value determined by a method based on JIS-K-7121 using DSC (Differential Scanning Colorimetry).
- H1 to H79 Specific examples (H1 to H79) of host compounds that can be used in the present invention are shown below, but are not limited thereto.
- a phosphorescent compound As a light-emitting material that can be used in the present invention, a phosphorescent compound (also referred to as a phosphorescent compound or a phosphorescent material) can be given.
- a phosphorescent compound is a compound in which light emission from an excited triplet is observed. Specifically, a phosphorescent compound emits phosphorescence at room temperature (25 ° C.), and a phosphorescence quantum yield of 0.01 at 25 ° C. Although defined as the above compounds, the preferred phosphorescence quantum yield is 0.1 or more.
- the phosphorescent quantum yield can be measured by the method described in Spectra II, page 398 (1992 version, Maruzen) of Experimental Chemistry Course 4 of the 4th edition. Although the phosphorescence quantum yield in a solution can be measured using various solvents, when using a phosphorescent compound in the present invention, the above phosphorescence quantum yield (0.01 or more) is achieved in any solvent. It only has to be done.
- phosphorescent compounds There are two types of light emission principles of phosphorescent compounds. One is that recombination of carriers occurs on the host compound to which carriers are transported to generate an excited state of the host compound, and this energy is transferred to the phosphorescent compound to obtain light emission from the phosphorescent compound.
- the other is a carrier trap type in which the phosphorescent compound becomes a carrier trap, and carriers are recombined on the phosphorescent compound to emit light from the phosphorescent compound. In any case, it is a condition that the excited state energy of the phosphorescent compound is lower than the excited state energy of the host compound.
- the phosphorescent compound can be appropriately selected from known compounds used for the light emitting layer of a general organic electroluminescent device, but preferably contains a metal of group 8 to 10 in the periodic table of elements. More preferred are iridium compounds, more preferred are iridium compounds, osmium compounds, platinum compounds (platinum complex compounds), and rare earth complexes, and most preferred are iridium compounds.
- At least one light emitting layer 3c may contain two or more phosphorescent compounds, and the concentration ratio of the phosphorescent compound in the light emitting layer 3c varies in the thickness direction of the light emitting layer 3c. It may be.
- the phosphorescent compound is preferably 0.1% by volume or more and less than 30% by volume with respect to the total amount of the light emitting layer 3c.
- the compound (phosphorescent compound) contained in the light emitting layer 3c is preferably a compound represented by the following general formula (5).
- the phosphorescent compound represented by the general formula (5) (also referred to as a phosphorescent metal complex) is preferably contained as a light emitting dopant in the light emitting layer 3c of the organic electroluminescent element EL-1. However, it may be contained in a light emitting functional layer other than the light emitting layer 3c.
- P and Q each represent a carbon atom or a nitrogen atom
- A1 represents an atomic group that forms an aromatic hydrocarbon ring or an aromatic heterocyclic ring together with P—C.
- A2 represents an atomic group that forms an aromatic heterocycle with QN.
- P1-L1-P2 represents a bidentate ligand
- P1 and P2 each independently represent a carbon atom, a nitrogen atom or an oxygen atom.
- L1 represents an atomic group that forms a bidentate ligand together with P1 and P2.
- j1 represents an integer of 1 to 3
- j2 represents an integer of 0 to 2
- j1 + j2 is 2 or 3.
- M1 represents a group 8-10 transition metal element in the periodic table.
- P and Q each represent a carbon atom or a nitrogen atom.
- examples of the aromatic hydrocarbon ring that A1 forms with PC include a benzene ring, a biphenyl ring, a naphthalene ring, an azulene ring, an anthracene ring, a phenanthrene ring, a pyrene ring, a chrysene ring, Naphthacene ring, triphenylene ring, o-terphenyl ring, m-terphenyl ring, p-terphenyl ring, acenaphthene ring, coronene ring, fluorene ring, fluoranthrene ring, naphthacene ring, pentacene ring, perylene ring, pentaphen ring, Examples include a picene ring, a pyrene ring, a pyranthrene ring, and an anthraanthrene ring.
- These rings may further have a substituent represented by Y1 in the general formula (1).
- the aromatic heterocycle formed by A1 together with P—C includes a furan ring, a thiophene ring, an oxazole ring, a pyrrole ring, a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, a triazine ring, Benzimidazole ring, oxadiazole ring, triazole ring, imidazole ring, pyrazole ring, thiazole ring, indole ring, benzimidazole ring, benzothiazole ring, benzoxazole ring, quinoxaline ring, quinazoline ring, phthalazine ring, carbazole ring, azacarbazole A ring etc. are mentioned.
- the azacarbazole ring means one in which at least one carbon atom of the benzene ring constituting the carbazole ring is replaced with a nitrogen atom.
- These rings may further have a substituent represented by Y1 in the general formula (1).
- the aromatic heterocycle formed by A2 together with QN includes an oxazole ring, an oxadiazole ring, an oxatriazole ring, an isoxazole ring, a tetrazole ring, a thiadiazole ring, a thiatriazole ring, Examples include a thiazole ring, a pyrrole ring, a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, a triazine ring, an imidazole ring, a pyrazole ring, and a triazole ring.
- These rings may further have a substituent represented by Y1 in the general formula (1).
- P1-L1-P2 represents a bidentate ligand
- P1 and P2 each independently represent a carbon atom, a nitrogen atom, or an oxygen atom
- L1 represents an atomic group that forms a bidentate ligand together with P1 and P2.
- Examples of the bidentate ligand represented by P1-L1-P2 include phenylpyridine, phenylpyrazole, phenylimidazole, phenyltriazole, phenyltetrazole, pyrazabol, acetylacetone, picolinic acid, and the like.
- j1 represents an integer of 1 to 3
- j2 represents an integer of 0 to 2
- j1 + j2 represents 2 or 3
- j2 is preferably 0.
- M1 is a transition metal element of group 8 to 10 in the periodic table of elements (also simply referred to as a transition metal), and among these, iridium is preferable.
- Z represents a hydrocarbon ring group or a heterocyclic group.
- P and Q each represent a carbon atom or a nitrogen atom
- A1 represents an atomic group that forms an aromatic hydrocarbon ring or an aromatic heterocyclic ring together with P—C.
- P1-L1-P2 represents a bidentate ligand
- P1 and P2 each independently represent a carbon atom, a nitrogen atom, or an oxygen atom.
- L1 represents an atomic group that forms a bidentate ligand together with P1 and P2.
- j1 represents an integer of 1 to 3
- j2 represents an integer of 0 to 2
- j1 + j2 is 2 or 3.
- M1 represents a group 8-10 transition metal element in the periodic table.
- examples of the hydrocarbon ring group represented by Z include a non-aromatic hydrocarbon ring group and an aromatic hydrocarbon ring group, and examples of the non-aromatic hydrocarbon ring group include a cyclopropyl group. , Cyclopentyl group, cyclohexyl group and the like. These groups may be unsubstituted or may have a substituent represented by Y1 in the general formula (1).
- aromatic hydrocarbon ring group examples include, for example, phenyl group, p-chlorophenyl group, mesityl group, tolyl group, xylyl group, naphthyl group, anthryl group, azulenyl. Group, acenaphthenyl group, fluorenyl group, phenanthryl group, indenyl group, pyrenyl group, biphenylyl group and the like.
- These groups may be unsubstituted or may have a substituent represented by Y1 in the general formula (1).
- examples of the heterocyclic group represented by Z include a non-aromatic heterocyclic group and an aromatic heterocyclic group.
- examples of the non-aromatic heterocyclic group include an epoxy ring and an aziridine group. Ring, thiirane ring, oxetane ring, azetidine ring, thietane ring, tetrahydrofuran ring, dioxolane ring, pyrrolidine ring, pyrazolidine ring, imidazolidine ring, oxazolidine ring, tetrahydrothiophene ring, sulfolane ring, thiazolidine ring, ⁇ -caprolactone ring, ⁇ - Caprolactam ring, piperidine ring, hexahydropyridazine ring, hexahydropyrimidine ring, piperazine ring, morpholine ring, tetrahydropyran ring
- These groups may be unsubstituted or may have a substituent represented by Y1 in the general formula (1).
- aromatic heterocyclic group examples include a pyridyl group, pyrimidinyl group, furyl group, pyrrolyl group, imidazolyl group, benzoimidazolyl group, pyrazolyl group, pyrazinyl group, triazolyl group (for example, 1,2,4-triazol-1-yl).
- oxazolyl group 1,2,3-triazol-1-yl group, etc.
- benzoxazolyl group thiazolyl group, isoxazolyl group, isothiazolyl group, furazanyl group, thienyl group, quinolyl group, benzofuryl group, dibenzofuryl group , Benzothienyl group, dibenzothienyl group, indolyl group, carbazolyl group, carbolinyl group, diazacarbazolyl group (indicating that one of the carbon atoms constituting the carboline ring of the carbolinyl group is replaced by a nitrogen atom), quinoxalinyl Group, pyridazinyl group, triazinyl group, Nazoriniru group, phthalazinyl group, and the like.
- These groups may be unsubstituted or may have a substituent represented by Y1 in the general formula (1).
- the group represented by Z is an aromatic hydrocarbon ring group or an aromatic heterocyclic group.
- the aromatic hydrocarbon ring that A1 forms with P—C includes benzene ring, biphenyl ring, naphthalene ring, azulene ring, anthracene ring, phenanthrene ring, pyrene ring, chrysene ring, naphthacene ring , Triphenylene ring, o-terphenyl ring, m-terphenyl ring, p-terphenyl ring, acenaphthene ring, coronene ring, fluorene ring, fluoranthrene ring, naphthacene ring, pentacene ring, perylene ring, pentaphen ring, picene ring , Pyrene ring, pyranthrene ring, anthraanthrene ring and the like.
- These rings may further have a substituent represented by Y1 in the general formula (1).
- the aromatic heterocycle formed by A1 together with PC includes furan ring, thiophene ring, oxazole ring, pyrrole ring, pyridine ring, pyridazine ring, pyrimidine ring, pyrazine ring, triazine ring, benzo Imidazole ring, oxadiazole ring, triazole ring, imidazole ring, pyrazole ring, thiazole ring, indole ring, benzimidazole ring, benzothiazole ring, benzoxazole ring, quinoxaline ring, quinazoline ring, phthalazine ring, carbazole ring, carboline ring, And azacarbazole ring.
- the azacarbazole ring means one in which at least one carbon atom of the benzene ring constituting the carbazole ring is replaced with a nitrogen atom.
- These rings may further have a substituent represented by Y1 in the general formula (1).
- examples of the bidentate ligand represented by P1-L1-P2 include phenylpyridine, phenylpyrazole, phenylimidazole, phenyltriazole, phenyltetrazole, pyrazabole, acetylacetone, and picolinic acid. .
- J1 represents an integer of 1 to 3
- j2 represents an integer of 0 to 2
- j1 + j2 represents 2 or 3
- j2 is preferably 0.
- transition metal elements of Group 8 to Group 10 in the periodic table of elements represented by M1 are the same as those in the periodic table of elements represented by M1 in the general formula (5). Synonymous with group 8-10 transition metal elements.
- R03 represents a substituent
- R04 represents a hydrogen atom or a substituent
- a plurality of R04 may be bonded to each other to form a ring.
- n01 represents an integer of 1 to 4.
- R05 represents a hydrogen atom or a substituent, and a plurality of R05 may be bonded to each other to form a ring.
- n02 represents an integer of 1 to 2.
- R06 represents a hydrogen atom or a substituent, and may combine with each other to form a ring.
- n03 represents an integer of 1 to 4.
- Z1 represents an atomic group necessary for forming a 6-membered aromatic hydrocarbon ring or a 5-membered or 6-membered aromatic heterocycle together with C—C.
- Z2 represents an atomic group necessary for forming a hydrocarbon ring group or a heterocyclic group.
- P1-L1-P2 represents a bidentate ligand, and P1 and P2 each independently represent a carbon atom, a nitrogen atom or an oxygen atom.
- L1 represents an atomic group that forms a bidentate ligand together with P1 and P2.
- j1 represents an integer of 1 to 3
- j2 represents an integer of 0 to 2
- j1 + j2 is 2 or 3.
- M1 represents a group 8-10 transition metal element in the periodic table.
- R03 and R06, R04 and R06, and R05 and R06 may be bonded to each other to form a ring.
- each of the substituents represented by R03, R04, R05, and R06 has the same meaning as the substituent represented by Y1 in the general formula (1).
- examples of the 6-membered aromatic hydrocarbon ring formed by Z1 together with C—C include a benzene ring.
- These rings may further have a substituent represented by Y1 in the general formula (1).
- examples of the 5- or 6-membered aromatic heterocycle formed by Z1 together with C—C include, for example, an oxazole ring, an oxadiazole ring, an oxatriazole ring, an isoxazole ring, a tetrazole ring, and a thiadiazole And a ring, a thiatriazole ring, an isothiazole ring, a thiophene ring, a furan ring, a pyrrole ring, a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, a triazine ring, an imidazole ring, a pyrazole ring, and a triazole ring.
- These rings may further have a substituent represented by Y1 in the general formula (1).
- examples of the hydrocarbon ring group represented by Z2 include a non-aromatic hydrocarbon ring group and an aromatic hydrocarbon ring group, and examples of the non-aromatic hydrocarbon ring group include a cyclopropyl group. , Cyclopentyl group, cyclohexyl group and the like. These groups may be unsubstituted or may have a substituent represented by Y1 in the general formula (1).
- aromatic hydrocarbon ring group examples include, for example, phenyl group, p-chlorophenyl group, mesityl group, tolyl group, xylyl group, naphthyl group, anthryl group, azulenyl.
- aromatic hydrocarbon group examples include, for example, phenyl group, p-chlorophenyl group, mesityl group, tolyl group, xylyl group, naphthyl group, anthryl group, azulenyl.
- These groups may be unsubstituted or may have a substituent represented by Y1 in the general formula (1).
- examples of the heterocyclic group represented by Z2 include a non-aromatic heterocyclic group and an aromatic heterocyclic group.
- examples of the non-aromatic heterocyclic group include an epoxy ring and an aziridine group. Ring, thiirane ring, oxetane ring, azetidine ring, thietane ring, tetrahydrofuran ring, dioxolane ring, pyrrolidine ring, pyrazolidine ring, imidazolidine ring, oxazolidine ring, tetrahydrothiophene ring, sulfolane ring, thiazolidine ring, ⁇ -caprolactone ring, ⁇ - Caprolactam ring, piperidine ring, hexahydropyridazine ring, hexahydropyrimidine ring, piperazine ring, morpholine ring, tetrahydropyran
- aromatic heterocyclic group examples include a pyridyl group, pyrimidinyl group, furyl group, pyrrolyl group, imidazolyl group, benzoimidazolyl group, pyrazolyl group, pyrazinyl group, triazolyl group (for example, 1,2,4-triazol-1-yl).
- oxazolyl group 1,2,3-triazol-1-yl group, etc.
- benzoxazolyl group thiazolyl group, isoxazolyl group, isothiazolyl group, furazanyl group, thienyl group, quinolyl group, benzofuryl group, dibenzofuryl group , Benzothienyl group, dibenzothienyl group, indolyl group, carbazolyl group, carbolinyl group, diazacarbazolyl group (indicating that one of the carbon atoms constituting the carboline ring of the carbolinyl group is replaced by a nitrogen atom), quinoxalinyl Group, pyridazinyl group, triazinyl group, Nazoriniru group, phthalazinyl group, and the like.
- These rings may be unsubstituted or may further have a substituent represented by Y1 in the general formula (1).
- the group formed by Z1 and Z2 is preferably a benzene ring.
- the bidentate ligand represented by P1-L1-P2 has the same meaning as the bidentate ligand represented by P1-L1-P2 in the general formula (5). .
- the transition metal elements of groups 8 to 10 in the periodic table of elements represented by M1 are the transition metal groups of groups 8 to 10 in the periodic table of elements represented by M1 in the general formula (5). Synonymous with metal element.
- the phosphorescent compound can be appropriately selected from known materials used for the light emitting layer 3c of the organic electroluminescent element EL-1.
- the phosphorescent compound according to the present invention is preferably a complex compound containing a group 8-10 metal in the periodic table of elements, more preferably an iridium compound, an osmium compound, or a platinum compound (platinum complex compound). Rare earth complexes, most preferably iridium compounds.
- Pt-1 to Pt-3, A-1, Ir-1 to Ir-50 Specific examples (Pt-1 to Pt-3, A-1, Ir-1 to Ir-50) of the phosphorescent compounds according to the present invention are shown below, but the present invention is not limited thereto.
- m and n represent the number of repetitions.
- phosphorescent compounds also referred to as phosphorescent metal complexes and the like
- Fluorescent materials include coumarin dyes, pyran dyes, cyanine dyes, croconium dyes, squalium dyes, oxobenzanthracene dyes, fluorescein dyes, rhodamine dyes, pyrylium dyes, perylene dyes, stilbene dyes Examples thereof include dyes, polythiophene dyes, and rare earth complex phosphors.
- injection layer electron injection layer 3e, hole injection layer 3a
- the injection layer is a layer provided between the electrode and the light emitting layer 3c in order to lower the driving voltage and improve the light emission luminance.
- the injection layer can be provided as necessary.
- the hole injection layer 3a may be present between the anode and the light emitting layer 3c or the hole transport layer 3b, and the electron injection layer 3e may be present between the cathode and the light emitting layer 3c or the electron transport layer 3d.
- JP-A-9-45479 JP-A-9-260062, JP-A-8-288069, and the like.
- Specific examples include phthalocyanine represented by copper phthalocyanine.
- examples thereof include a layer, an oxide layer typified by vanadium oxide, an amorphous carbon layer, and a polymer layer using a conductive polymer such as polyaniline (emeraldine) or polythiophene.
- the electron injection layer 3e is desirably a very thin film, and the film thickness is preferably in the range of 1 nm to 10 ⁇ m although it depends on the material.
- the hole transport layer 3b is made of a hole transport material having a function of transporting holes, and in a broad sense, the hole injection layer 3a and the electron blocking layer are also included in the hole transport layer 3b.
- the hole transport layer 3b can be provided as a single layer or a plurality of layers.
- the hole transport material has either hole injection or transport or electron barrier properties, and may be either organic or inorganic.
- triazole derivatives oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives and pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives
- Examples thereof include stilbene derivatives, silazane derivatives, aniline copolymers, and conductive polymer oligomers, particularly thiophene oligomers.
- hole transport material those described above can be used, but it is preferable to use a porphyrin compound, an aromatic tertiary amine compound and a styrylamine compound, particularly an aromatic tertiary amine compound.
- aromatic tertiary amine compounds and styrylamine compounds include N, N, N ′, N′-tetraphenyl-4,4′-diaminophenyl; N, N′-diphenyl-N, N′— Bis (3-methylphenyl)-[1,1′-biphenyl] -4,4′-diamine (TPD); 2,2-bis (4-di-p-tolylaminophenyl) propane; 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane; N, N, N ′, N′-tetra-p-tolyl-4,4′-diaminobiphenyl; 1,1-bis (4-di-p-tolyl) Aminophenyl) -4-phenylcyclohexane; bis (4-dimethylamino-2-methylphenyl) phenylmethane; bis (4-di-p-tolylaminoph
- a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used.
- inorganic compounds such as p-type-Si and p-type-SiC can also be used as the hole injection material and the hole transport material.
- a so-called p-type hole transport material as described in 139 can also be used. In the present invention, it is preferable to use these materials because a light-emitting element with higher efficiency can be obtained.
- the hole transport layer 3b is formed by thinning the hole transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method. be able to.
- the film thickness of the hole transport layer 3b is not particularly limited, but is usually about 5 nm to 5 ⁇ m, preferably 5 to 200 nm.
- the hole transport layer 3b may have a single layer structure composed of one or more of the above materials.
- Examples thereof include JP-A-4-297076, JP-A-2000-196140, 2001-102175, J.A. Appl. Phys. 95, 5773 (2004), and the like.
- the electron transport layer 3d is made of a material having a function of transporting electrons. In a broad sense, the electron injection layer 3e and a hole blocking layer (not shown) are also included in the electron transport layer 3d.
- the electron transport layer 3d can be provided as a single layer structure or a multi-layer structure.
- an electron transport material also serving as a hole blocking material
- electrons injected from the cathode are used. What is necessary is just to have the function to transmit to the light emitting layer 3c.
- any one of conventionally known compounds can be selected and used. Examples include nitro-substituted fluorene derivatives, diphenylquinone derivatives, thiopyran dioxide derivatives, carbodiimides, fluorenylidenemethane derivatives, anthraquinodimethane, anthrone derivatives, and oxadiazole derivatives.
- a thiadiazole derivative in which an oxygen atom of the oxadiazole ring is substituted with a sulfur atom, and a quinoxaline derivative having a quinoxaline ring known as an electron withdrawing group are also used as the material for the electron transport layer 3d.
- a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used.
- metal complexes of 8-quinolinol derivatives such as tris (8-quinolinol) aluminum (Alq3), tris (5,7-dichloro-8-quinolinol) aluminum, tris (5,7-dibromo-8-quinolinol) aluminum Tris (2-methyl-8-quinolinol) aluminum, tris (5-methyl-8-quinolinol) aluminum, bis (8-quinolinol) zinc (Znq), and the like, and the central metals of these metal complexes are In, Mg, A metal complex replaced with Cu, Ca, Sn, Ga, or Pb can also be used as the material of the electron transport layer 3d.
- metal-free or metal phthalocyanine or those having terminal ends substituted with an alkyl group or a sulfonic acid group can be preferably used as the material for the electron transport layer 3d.
- a distyrylpyrazine derivative exemplified also as a material of the light emitting layer 3c can be used as a material of the electron transport layer 3d, and n-type Si, n, like the hole injection layer 3a and the hole transport layer 3b.
- An inorganic semiconductor such as type-SiC can also be used as the material of the electron transport layer 3d.
- the electron transport layer 3d can be formed by thinning the above material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method.
- the film thickness of the electron transport layer 3d is not particularly limited, but is usually about 5 nm to 5 ⁇ m, preferably 5 to 200 nm.
- the electron transport layer 3d may have a single layer structure composed of one or more of the above materials.
- the electron transport layer 3d contains potassium or a potassium compound.
- the potassium compound for example, potassium fluoride can be used.
- the material (electron transporting compound) of the electron transport layer 3d the same material as that constituting the nitrogen-containing layer 1a described above may be used.
- the electron transport layer 3d that also serves as the electron injection layer 3e the same material as that of the nitrogen-containing layer 1a described above may be used.
- the blocking layer is provided as necessary in addition to the basic constituent layer of the organic compound thin film as described above. For example, it is described in JP-A Nos. 11-204258 and 11-204359, and “Organic EL elements and the forefront of industrialization (published by NTT Corporation on November 30, 1998)” on page 237. There is a hole blocking (hole blocking) layer.
- the hole blocking layer has the function of the electron transport layer 3d in a broad sense.
- the hole blocking layer is made of a hole blocking material that has a function of transporting electrons but has a very small ability to transport holes, and recombines electrons and holes by blocking holes while transporting electrons. Probability can be improved.
- the structure of the electron carrying layer 3d mentioned later can be used as a hole-blocking layer based on this invention as needed.
- the hole blocking layer is preferably provided adjacent to the light emitting layer 3c.
- the electron blocking layer has the function of the hole transport layer 3b in a broad sense.
- the electron blocking layer is made of a material that has a function of transporting holes but has a very small ability to transport electrons, and improves the probability of recombination of electrons and holes by blocking electrons while transporting holes. be able to.
- the structure of the positive hole transport layer 3b mentioned later can be used as an electron blocking layer as needed.
- the film thickness of the hole blocking layer according to the present invention is preferably 3 to 100 nm, and more preferably 5 to 30 nm.
- the auxiliary electrode 15 is provided for the purpose of reducing the resistance of the transparent electrode 1, and is provided in contact with the electrode layer 1 b of the transparent electrode 1.
- the material forming the auxiliary electrode 15 is preferably a metal having low resistance such as gold, platinum, silver, copper, or aluminum. Since these metals have low light transmittance, a pattern is formed in a range not affected by extraction of the emitted light h from the light extraction surface 13a.
- Examples of the method for forming the auxiliary electrode 15 include a vapor deposition method, a sputtering method, a printing method, an ink jet method, and an aerosol jet method.
- the line width of the auxiliary electrode 15 is preferably 50 ⁇ m or less from the viewpoint of the aperture ratio for extracting light, and the thickness of the auxiliary electrode 15 is preferably 1 ⁇ m or more from the viewpoint of conductivity.
- the sealing material 17 covers the organic electroluminescent element EL, and may be a plate-like (film-like) sealing member that is fixed to the transparent substrate 13 side by the adhesive 19. It may be a sealing film. Such a sealing material 17 is provided so as to cover at least the light emitting functional layer 3 in a state where the terminal portions of the transparent electrode 1 and the counter electrode 5-1 in the organic electroluminescent element EL are exposed. Further, an electrode may be provided on the sealing material 17 so that the transparent electrode 1 and the terminal portion of the counter electrode 5-1 of the organic electroluminescent element EL-1 are electrically connected to this electrode.
- the plate-like (film-like) sealing material 17 include a glass substrate, a polymer substrate, a metal substrate, and the like. These substrate materials may be used in the form of a thin film.
- the glass substrate include soda-lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, and quartz.
- the polymer substrate include polycarbonate, acrylic, polyethylene terephthalate, polyether sulfide, and polysulfone.
- the metal substrate include those made of one or more metals or alloys selected from the group consisting of stainless steel, iron, copper, aluminum, magnesium, nickel, zinc, chromium, titanium, molybdenum, silicon, germanium, and tantalum.
- the element can be made thin, a polymer substrate or a metal substrate formed into a thin film can be preferably used as the sealing material.
- the polymer substrate in the form of a film has an oxygen permeability measured by a method according to JIS K 7126-1987 of 1 ⁇ 10 ⁇ 3 ml / (m 2 ⁇ 24 h ⁇ atm) or less, and JIS K 7129-1992.
- the water vapor transmission rate (25 ⁇ 0.5 ° C., relative humidity (90 ⁇ 2)% RH) measured by a method based on the above is 1 ⁇ 10 ⁇ 3 g / (m 2 ⁇ 24 h) or less. It is preferable.
- the above substrate material may be processed into a concave plate shape and used as the sealing material 17.
- the above-described substrate member is subjected to processing such as sand blasting or chemical etching to form a concave shape.
- An adhesive 19 for fixing such a plate-shaped sealing material 17 to the transparent substrate 13 side seals the organic electroluminescence element EL-1 sandwiched between the sealing material 17 and the transparent substrate 13. Used as a sealing agent to stop.
- Specific examples of such an adhesive 19 include photocuring and thermosetting adhesives having reactive vinyl groups of acrylic acid oligomers and methacrylic acid oligomers, moisture curing types such as 2-cyanoacrylates, and the like. Can be mentioned.
- an adhesive 19 there can be mentioned epoxy-based heat and chemical curing type (two-component mixing).
- hot-melt type polyamide, polyester, and polyolefin can be mentioned.
- a cationic curing type ultraviolet curing epoxy resin adhesive can be mentioned.
- the adhesive 19 is preferably one that can be adhesively cured from room temperature to 80 ° C. Further, a desiccant may be dispersed in the adhesive 19.
- Application of the adhesive 19 to the bonding portion between the sealing material 17 and the transparent substrate 13 may be performed using a commercially available dispenser or may be printed like screen printing.
- this gap when a gap is formed between the plate-shaped sealing material 17, the transparent substrate 13, and the adhesive 19, this gap has an inert gas such as nitrogen or argon or fluoride in the gas phase and the liquid phase. It is preferable to inject an inert liquid such as hydrocarbon or silicon oil. A vacuum is also possible. Moreover, a hygroscopic compound can also be enclosed inside.
- an inert gas such as nitrogen or argon or fluoride in the gas phase and the liquid phase. It is preferable to inject an inert liquid such as hydrocarbon or silicon oil. A vacuum is also possible.
- a hygroscopic compound can also be enclosed inside.
- hygroscopic compound examples include metal oxides (for example, sodium oxide, potassium oxide, calcium oxide, barium oxide, magnesium oxide, aluminum oxide) and sulfates (for example, sodium sulfate, calcium sulfate, magnesium sulfate, cobalt sulfate).
- metal oxides for example, sodium oxide, potassium oxide, calcium oxide, barium oxide, magnesium oxide, aluminum oxide
- sulfates for example, sodium sulfate, calcium sulfate, magnesium sulfate, cobalt sulfate.
- metal halides eg calcium chloride, magnesium chloride, cesium fluoride, tantalum fluoride, cerium bromide, magnesium bromide, barium iodide, magnesium iodide etc.
- perchloric acids eg perchloric acid Barium, magnesium perchlorate, and the like
- anhydrous salts are preferably used in sulfates, metal halides, and perchloric acids.
- the sealing material 17 when a sealing film is used as the sealing material 17, the light emitting functional layer 3 in the organic electroluminescent element EL-1 is completely covered, and the transparent electrode 1 and the counter electrode 5-1 in the organic electroluminescent element EL-1 are covered.
- a sealing film is provided on the transparent substrate 13 with the terminal portions exposed.
- Such a sealing film is composed of an inorganic material or an organic material.
- it is made of a material having a function of suppressing entry of a substance that causes deterioration of the light emitting functional layer 3 in the organic electroluminescent element EL-1, such as moisture and oxygen.
- a material for example, an inorganic material such as silicon oxide, silicon dioxide, or silicon nitride is used.
- a laminated structure may be formed by using a film made of an organic material together with a film made of these inorganic materials.
- the method for forming these films is not particularly limited.
- vacuum deposition, sputtering, reactive sputtering, molecular beam epitaxy, cluster ion beam, ion plating, plasma polymerization, atmospheric pressure plasma A combination method, a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used.
- a protective film or a protective plate may be provided between the transparent substrate 13 and the organic electroluminescent element EL and the sealing material 17.
- This protective film or protective plate is for mechanically protecting the organic electroluminescent element EL, and in particular when the sealing material 17 is a sealing film, mechanical protection for the organic electroluminescent element EL.
- a glass plate, a polymer plate, a thinner polymer film, a metal plate, a thinner metal film, a polymer material film or a metal material film is applied.
- a polymer film because it is light and thin.
- the nitrogen-containing layer 1a made of a compound containing nitrogen atoms is formed on the transparent substrate 13 by an appropriate method such as an evaporation method so as to have a film thickness of 1 ⁇ m or less, preferably 10 nm to 100 nm.
- an electrode layer 1b made of silver (or an alloy containing silver as a main component) is formed on the nitrogen-containing layer 1a by an appropriate method such as vapor deposition so as to have a film thickness of 12 nm or less, preferably 4 nm to 9 nm.
- the transparent electrode 1 to be the anode is produced.
- a hole injection layer 3 a, a hole transport layer 3 b, a light emitting layer 3 c, an electron transport layer 3 d, and an electron injection layer 3 e are formed in this order to form the light emitting functional layer 3.
- the film formation of each of these layers includes spin coating, casting, ink jet, vapor deposition, and printing, but vacuum vapor deposition is easy because a homogeneous film is easily obtained and pinholes are difficult to generate.
- the method or spin coating method is particularly preferred.
- different film forming methods may be applied for each layer. When a vapor deposition method is employed for forming each of these layers, the vapor deposition conditions vary depending on the type of compound used, etc., but generally a boat heating temperature of 50 ° C.
- each condition is desirable to select as appropriate within a deposition rate range of 0.01 nm / second to 50 nm / second, a substrate temperature of ⁇ 50 ° C. to 300 ° C., and a film thickness of 0.1 ⁇ m to 5 ⁇ m.
- a counter electrode 5-1 serving as a cathode is formed thereon by an appropriate film forming method such as a vapor deposition method or a sputtering method.
- the counter electrode 5-1 is patterned in a shape in which a terminal portion is drawn from the upper side of the light emitting functional layer 3 to the periphery of the transparent substrate 13 while being insulated from the transparent electrode 1 by the light emitting functional layer 3. .
- organic electroluminescent element EL-1 is obtained.
- a sealing material 17 that covers at least the light emitting functional layer 3 is provided in a state in which the terminal portions of the transparent electrode 1 and the counter electrode 5-1 in the organic electroluminescent element EL-1 are exposed.
- a desired organic electroluminescence element EL is obtained on the transparent substrate 13.
- the light emitting functional layer 3 is consistently produced from the counter electrode 5-1 by one evacuation, but in the middle of the transparent substrate 13 from the vacuum atmosphere.
- the film may be taken out and subjected to a different film formation method. At that time, it is necessary to consider that the work is performed in a dry inert gas atmosphere.
- the transparent electrode 1 as an anode has a positive polarity and the counter electrode 5-1 as a cathode has a negative polarity.
- a voltage of about 2 V to 40 V is applied, light emission can be observed.
- An alternating voltage may be applied.
- the alternating current waveform to be applied may be arbitrary.
- the organic electroluminescent element EL-1 described above uses the transparent electrode 1 having both conductivity and light transmittance of the present invention as an anode, and a light emitting functional layer 3 and a counter electrode 5-1 serving as a cathode on the upper part. Is provided. For this reason, a sufficient voltage is applied between the transparent electrode 1 and the counter electrode 5-1 to realize high-intensity light emission in the organic electroluminescent element EL-1, while the emitted light h from the transparent electrode 1 side is emitted. It is possible to increase the luminance by improving the extraction efficiency. Further, it is possible to improve the light emission life by reducing the drive voltage for obtaining a predetermined luminance.
- FIG. 4 is a cross-sectional configuration diagram illustrating a second example of an organic electroluminescent element using the above-described transparent electrode as an example of the electronic device of the present invention.
- the organic electroluminescent element EL-2 of the second example shown in this figure is different from the organic electroluminescent element EL-1 of the first example described with reference to FIG. 3 in that the transparent electrode 1 is used as a cathode. .
- the transparent electrode 1 is used as a cathode.
- the organic electroluminescent element EL-2 shown in FIG. 4 is provided on the transparent substrate 13, and like the first example, the transparent electrode 1 of the present invention described above as the transparent electrode 1 on the transparent substrate 13 is used. The place where it is used is characteristic. For this reason, the organic electroluminescent element EL-2 is configured to extract the emitted light h from at least the transparent substrate 13 side. However, the transparent electrode 1 is used as a cathode (cathode). For this reason, the counter electrode 5-2 is used as an anode.
- the layer structure of the organic electroluminescent element EL-2 is not limited, but may be a general layer structure as in the first example.
- an electron injection layer 3e / electron transport layer 3d / light emitting layer 3c / hole transport layer 3b / hole injection layer 3a are arranged in this order on the transparent electrode 1 functioning as a cathode.
- a stacked configuration is exemplified. However, it is essential to have at least the light emitting layer 3c made of an organic material.
- the light emitting functional layer 3 may employ various configurations as necessary, as described in the first example. In such a configuration, only the portion where the light emitting functional layer 3 is sandwiched between the transparent electrode 1 and the counter electrode 5-2 becomes the light emitting region in the organic electroluminescent element EL-2, as in the first example. .
- the auxiliary electrode 15 may be provided in contact with the electrode layer 1b of the transparent electrode 1 for the purpose of reducing the resistance of the transparent electrode 1. It is the same.
- the counter electrode 5-2 used as the anode is made of a metal, an alloy, an organic or inorganic conductive compound, and a mixture thereof.
- metals such as gold (Au), oxide semiconductors such as copper iodide (CuI), ITO, ZnO, TiO 2 , and SnO 2 .
- the counter electrode 5-2 as described above can be produced by forming a thin film of these conductive materials by a method such as vapor deposition or sputtering.
- the sheet resistance as the counter electrode 5-2 is several hundred ⁇ / sq.
- the film thickness is usually selected from the range of 5 nm to 5 ⁇ m, preferably 5 nm to 200 nm.
- the organic electroluminescent element EL-2 takes out the emitted light h from the counter electrode 5-2 side
- the light transmitting material among the conductive materials described above is used as the material constituting the counter electrode 5-2.
- a conductive material having good properties may be selected.
- the organic electroluminescent element EL-2 having the above-described configuration is sealed with a sealing material 17 in the same manner as in the first example for the purpose of preventing deterioration of the light emitting functional layer 3.
- the detailed structure of the constituent elements other than the counter electrode 5-2 used as the anode and the method for producing the organic electroluminescent element EL-2 are as follows. The same as in the example. Therefore, detailed description is omitted.
- the organic electroluminescent element EL-2 described above uses the transparent electrode 1 having both conductivity and light transmittance according to the present invention as a cathode, and a light emitting functional layer 3 and a counter electrode 5-2 serving as an anode on the upper side. Is provided. Therefore, as in the first example, a sufficient voltage is applied between the transparent electrode 1 and the counter electrode 5-1 to realize high-luminance light emission in the organic electroluminescent element EL-2, while the transparent electrode 1 It is possible to increase the luminance by improving the extraction efficiency of the emitted light h from the side. Further, it is possible to improve the light emission life by reducing the drive voltage for obtaining a predetermined luminance.
- FIG. 5 is a cross-sectional configuration diagram showing a third example of an organic electroluminescent element using the above-described transparent electrode as an example of the electronic device of the present invention.
- the organic electroluminescent element EL-3 of the third example shown in this figure is different from the organic electroluminescent element EL-1 of the first example described with reference to FIG.
- the light emitting functional layer 3 and the transparent electrode 1 are laminated in this order on the upper part.
- the detailed description of the same components as those in the first example will be omitted, and the characteristic configuration of the organic electroluminescent element EL-3 in the third example will be described.
- An organic electroluminescent element EL-3 shown in FIG. 5 is provided on a substrate 13 ′, and in order from the substrate 13 ′ side, a counter electrode 5-3 serving as an anode, a light emitting functional layer 3, and a transparent electrode serving as a cathode. 1 is laminated.
- the transparent electrode 1 is characterized in that the transparent electrode 1 of the present invention described above is used.
- the organic electroluminescent element EL-3 is configured to extract the emitted light h from at least the transparent electrode 1 side opposite to the substrate 13 ′.
- the layer structure of the organic electroluminescent element EL-3 is not limited, and may be a general layer structure as in the first example.
- a structure in which a hole injection layer 3a / a hole transport layer 3b / a light emitting layer 3c / an electron transport layer 3d are stacked in this order on the counter electrode 5-3 functioning as an anode. Is exemplified. However, it is essential to have at least the light emitting layer 3c configured using an organic material.
- the electron transport layer 3d also serves as the electron injection layer 3e, and is provided as an electron transport layer 3d having electron injection properties.
- an electron transport layer 3d having electron injection properties is provided as the nitrogen-containing layer 1a in the transparent electrode 1. That is, in the third example, the transparent electrode 1 used as the cathode is composed of the nitrogen-containing layer 1a that also serves as the electron transporting layer 3d having the electron injecting property, and the electrode layer 1b provided on the upper part. is there.
- the electron transport layer 3d is configured using the material that forms the nitrogen-containing layer 1a of the transparent electrode 1 described above.
- the light emitting functional layer 3 adopts various configurations as necessary, as described in the first example, but the electron that also serves as the nitrogen-containing layer 1a of the transparent electrode 1 is used. No electron injection layer or hole blocking layer is provided between the transport layer 3d and the electrode layer 1b of the transparent electrode 1. In the above configuration, only the portion where the light emitting functional layer 3 is sandwiched between the transparent electrode 1 and the counter electrode 5-3 is the light emitting region in the organic electroluminescent element EL-3, as in the first example. It is.
- the auxiliary electrode 15 may be provided in contact with the electrode layer 1b of the transparent electrode 1 for the purpose of reducing the resistance of the transparent electrode 1. It is the same.
- the counter electrode 5-3 used as the anode is made of a metal, an alloy, an organic or inorganic conductive compound, and a mixture thereof.
- metals such as gold (Au), oxide semiconductors such as copper iodide (CuI), ITO, ZnO, TiO 2 , and SnO 2 .
- the counter electrode 5-3 as described above can be produced by forming a thin film of these conductive materials by a method such as vapor deposition or sputtering.
- the sheet resistance as the counter electrode 5-3 is several hundred ⁇ / sq.
- the film thickness is usually selected from the range of 5 nm to 5 ⁇ m, preferably 5 nm to 200 nm.
- the material constituting the counter electrode 5-3 is light among the conductive materials described above.
- a conductive material with good permeability may be selected and used.
- the substrate 13 ′ is the same as the transparent substrate 13 described in the first example, and the surface facing the outside of the substrate 13 ′ is a light extraction surface 13 a ′.
- the electron transport layer 3d having the electron injecting property constituting the uppermost part of the light emitting functional layer 3 is used as the nitrogen-containing layer 1a, and the electrode layer 1b is provided on the nitrogen containing layer 1a.
- the transparent electrode 1 composed of the containing layer 1a and the upper electrode layer 1b is provided as a cathode. Therefore, as in the first and second examples, a sufficient voltage is applied between the transparent electrode 1 and the counter electrode 5-3 to realize high-luminance light emission in the organic electroluminescent element EL-3. It is possible to increase the luminance by improving the extraction efficiency of the emitted light h from the transparent electrode 1 side. Further, it is possible to improve the light emission life by reducing the drive voltage for obtaining a predetermined luminance. If the counter electrode 5-3 is light transmissive in the above configuration, the emitted light h can be extracted from the counter electrode 5-3.
- the nitrogen-containing layer 1a of the transparent electrode 1 also serves as the electron transport layer 3d having electron injection properties.
- the nitrogen-containing layer 1a may also serve as an electron injection layer, or may serve as an electron transport layer 3d that does not have electron injection properties, and is an extremely thin film that does not affect the light emitting function. If provided, the electron transporting property and the electron injecting property may not be provided.
- the transparent electrode 1 on the light emitting functional layer 3 with the counter electrode on the substrate 13 'side as the cathode. May be used as the anode.
- the light emitting functional layer 3 includes, for example, an electron injection layer 3e / electron transport layer 3d / light emitting layer 3c / hole transport layer 3b / hole injection layer 3a in order from the counter electrode (cathode) side on the substrate 13 ′. Laminated. A transparent electrode 1 having a laminated structure of an extremely thin nitrogen-containing layer 1a and an electrode layer 1b is provided as an anode on the top.
- Such a nitrogen-containing layer 1a may be a nitrogen-containing layer that also serves as a hole-transporting layer or a hole-injecting layer by using a nitrogen-containing compound having a hole-transporting property or a hole-injecting property.
- both the anode and the cathode may be the transparent electrode 1.
- a transparent substrate is used as the substrate on which the transparent electrode 1 as the cathode is provided, and the emitted light h is extracted from both the anode side and the cathode side.
- organic electroluminescent devices are surface light emitters as described above, they can be used as various light emission sources.
- lighting devices such as home lighting and interior lighting, backlights for clocks and liquid crystals, lighting for billboard advertisements, light sources for traffic lights, light sources for optical storage media, light sources for electrophotographic copying machines, light sources for optical communication processors, Examples include, but are not limited to, a light source of an optical sensor, and can be effectively used as a backlight of a liquid crystal display device combined with a color filter and a light source for illumination.
- the organic electroluminescent device of the present invention may be used as a kind of lamp for illumination or exposure light source, a projection device for projecting an image, or a type for directly viewing a still image or a moving image. It may be used as a display device (display).
- the area of the light emitting surface may be increased by so-called tiling, in which the light emitting panels provided with the organic electroluminescent elements are joined together in a plane, in accordance with the recent increase in the size of lighting devices and displays.
- the drive method when used as a display device for moving image reproduction may be either a simple matrix (passive matrix) method or an active matrix method.
- a color or full-color display device can be produced by using two or more organic electroluminescent elements of the present invention having different emission colors.
- a lighting device will be described as an example of the application, and then a lighting device having a light emitting surface enlarged by tiling will be described.
- Lighting device-1 >> The illuminating device of this invention has the said organic electroluminescent element.
- the organic electroluminescent element used in the illumination device of the present invention may be designed such that each organic electroluminescent element having the above-described configuration has a resonator structure.
- Examples of the purpose of use of the organic electroluminescence device configured as a resonator structure include, but are not limited to, a light source of an optical storage medium, a light source of an electrophotographic copying machine, a light source of an optical communication processor, a light source of an optical sensor, and the like. Not. Moreover, you may use for the said use by making a laser oscillation.
- the material used for the organic electroluminescent element of this invention is applicable to the organic electroluminescent element (it is also called a white organic electroluminescent element) which produces substantially white light emission.
- a plurality of light emitting materials can simultaneously emit a plurality of light emission colors to obtain white light emission by color mixing.
- the combination of a plurality of emission colors may include three emission maximum wavelengths of the three primary colors of red, green and blue, or two using the complementary colors such as blue and yellow, blue green and orange. The thing containing the light emission maximum wavelength may be used.
- the combination of luminescent materials for obtaining multiple luminescent colors is a combination of multiple phosphorescent or fluorescent materials that emit light, fluorescent materials or phosphorescent materials, and light from the luminescent materials. Any combination with a dye material that emits light as light may be used, but in a white organic electroluminescent element, a combination of a plurality of light-emitting dopants may be used.
- Such a white organic electroluminescent element is different from a configuration in which organic electroluminescent elements emitting each color are individually arranged in parallel to obtain white light emission, and the organic electroluminescent element itself emits white light. For this reason, a mask is not required for film formation of most layers constituting the element, and for example, an electrode film can be formed on one side by vapor deposition, casting, spin coating, ink jet, printing, etc., and productivity is improved. To do.
- the light emitting material used for the light emitting layer of such a white organic electroluminescent element is not particularly limited.
- a backlight in a liquid crystal display element is adapted to a wavelength range corresponding to the CF (color filter) characteristics.
- any metal complex according to the present invention or a known light emitting material may be selected and combined to be whitened.
- the white organic electroluminescent element described above it is possible to produce a lighting device that emits substantially white light.
- FIG. 6 shows a cross-sectional configuration diagram of a lighting device in which a plurality of organic electroluminescent elements having the above-described configurations are used to increase the light emitting surface area.
- a plurality of light emitting panels 21 each provided with an organic electroluminescent element EL-1 on a transparent substrate 13 are arranged on a support substrate 23 (that is, tiling) to thereby form a light emitting surface.
- the structure is large.
- the support substrate 23 may also serve as the sealing material 17, and each light-emitting panel in a state where the organic electroluminescence element EL- 1 is sandwiched between the support substrate 23 and the transparent substrate 13 of the light-emitting panel 21.
- An adhesive 19 may be filled between the support substrate 23 and the transparent substrate 13 to seal the organic electroluminescent element EL-1. Note that the ends of the transparent electrode 1 as an anode and the counter electrode 5-1 as a cathode are exposed around the light-emitting panel 21. However, only the exposed portion of the counter electrode 5-1 is shown in the drawing.
- each light emitting panel 21 is a light emitting area A, and a non-light emitting area B is generated between the light emitting panels 21.
- a light extraction member for increasing the light extraction amount from the non-light emitting region B may be provided in the non-light emitting region B of the light extraction surface 13a.
- a light collecting sheet or a light diffusion sheet can be used as the light extraction member.
- each of the transparent electrodes of Samples 1-1 to 1-9 was manufactured so that the area of the conductive region was 5 cm ⁇ 5 cm.
- the first vacuum chamber was depressurized to 4 ⁇ 10 ⁇ 4 Pa, and then heated by energizing a heating boat containing each compound, and each film formation rate (0. 02 nm / s, 0.3 nm / s, or 0.5 nm / s), and a nitrogen-containing layer composed of each compound having a film thickness of 25 nm was provided on the substrate.
- the base material formed up to the nitrogen-containing layer is transferred to the second vacuum chamber while maintaining a vacuum, and after the pressure in the second vacuum chamber is reduced to 4 ⁇ 10 ⁇ 4 Pa, the heating boat containing silver is energized and heated. did.
- an electrode layer made of silver with each film thickness (8 nm or 12 nm) was formed at a deposition rate of 0.1 nm / s as shown in Table 1 above, and a laminated structure of the nitrogen-containing layer and the upper electrode layer Samples 1-1 to 1-9 comprising the transparent electrodes were obtained.
- the sheet resistance is 10 ⁇ / sq. Less than and kept low.
- the transparent electrodes of Samples 1-3, 1-6, and 1-9 in which the film formation rate of the nitrogen-containing layer is 0.5 nm / s, the sheet resistance is 10 ⁇ / sq. Less than and kept low.
- the transparent electrode of the configuration of the present invention has both high light transmittance and conductivity.
- FIGS. 7 to 9 show SEM images (magnification: 100,000 times) of the transparent electrodes of Samples 1-1 to 1-3. When these are compared, as described below, the formation of the nitrogen-containing layer is shown. It was clear that the film formation state of silver constituting the electrode layer was different depending on the film speed. In the transparent electrode outside the scope of the present invention in which the film formation rate of the nitrogen-containing layer of Sample 1-1 shown in FIG. 7 is 0.02 nm / s, the silver constituting the electrode layer provided adjacent to the nitrogen-containing layer ( The continuity of the white display part in the figure was low. Furthermore, the part (black display part in a figure) which is not coat
- the transparent electrode of the configuration of the present invention in which the film formation rate of the nitrogen-containing layer of Sample 1-2 shown in FIG. 8 is 0.3 nm / s, the silver constituting the electrode layer provided adjacent to the nitrogen-containing layer is It was connected.
- the transparent electrode of the configuration of the present invention in which the film formation rate of the nitrogen-containing layer of Sample 1-3 shown in FIG. 9 is 0.5 nm / s similarly forms an electrode layer provided adjacent to the nitrogen-containing layer. Silver was connected.
- the transparent electrode of Sample 1-3 shown in FIG. 9 has fewer parts not covered with silver than the transparent electrode of Sample 1-2 shown in FIG. 8, and the continuity of silver constituting the electrode layer is high. It was.
- FIGS. 10 to 12 showing SEM images (magnification: 100,000 times) of the transparent electrodes of Samples 1-4 to 1-6, as in FIGS. 7 to 9, the nitrogen-containing layer is formed.
- the film formation state of the silver constituting the electrode layer was different depending on the speed.
- FIGS. 13 to 15 showing SEM images (magnification: 100,000 times) of the transparent electrodes of Samples 1-7 to 1-9, as in FIGS.
- the film forming state of silver constituting the electrode layer was different depending on the film forming speed of the containing layer.
- the transparent electrode having the structure of the present invention in which the deposition rate of the nitrogen-containing layer is 0.3 nm / s or more is not a nuclear growth type (Volume-Weber: VW type) but a single layer growth type (Frank-van der). It was confirmed that an electrode layer adjacent to the nitrogen-containing layer was formed by film growth closer to Merwe (FM type).
- the material which comprises the nitrogen containing layer provided adjacent to the electrode layer is the same, the silver (white display part in a figure) which comprises an electrode layer will become so that the film-forming speed
- Example 1 the example in which the film thickness of the nitrogen-containing layer is 25 nm has been described.
- the film thickness of the nitrogen-containing layer is not limited to this, and the same result can be obtained regardless of whether the film thickness is thinner or thicker. It was. That is, regardless of the film thickness of the nitrogen-containing layer, a result that the light transmittance and the sheet resistance of the transparent electrode were improved as the film-forming speed of the nitrogen-containing layer was increased.
- each of the transparent electrodes of Samples 2-1 to 2-9 was fabricated such that the area of the conductive region was 5 cm ⁇ 5 cm.
- the compound 10 containing nitrogen was used as a compound constituting the nitrogen-containing layer.
- This compound 10 is a compound included in the general formula (3).
- the compound 94 containing nitrogen was used as the compound constituting the nitrogen-containing layer.
- This compound 94 is a compound included in the general formula (3).
- the compound 99 containing nitrogen was used as the compound constituting the nitrogen-containing layer.
- This compound 99 is a compound included in the general formula (1).
- the first vacuum chamber was depressurized to 4 ⁇ 10 ⁇ 4 Pa, and then heated by energizing the heating boat containing each compound, and the film was formed on the substrate at a film formation rate of 0.3 nm / s.
- a nitrogen-containing layer composed of each compound having a film thickness of 25 nm was formed.
- the base material formed up to the nitrogen-containing layer was transferred to the second vacuum chamber while being vacuumed, and at a film formation rate of 0.02 nm / s, silver of each film thickness (8 nm or 12 nm) as shown in Table 2 above.
- the electrode layer composed of was formed adjacent to the nitrogen-containing layer.
- the nitrogen-containing layer is formed within a time period in which the interval between the deposition of the nitrogen-containing layer and the subsequent deposition of the electrode layer corresponds to each deposition interval (1 minute, 2 minutes, or 10 minutes) shown in Table 2 above.
- the base material formed up to the layer was transferred from the first vacuum chamber to the second vacuum chamber, and the electrode layers were formed.
- This second vacuum tank was prepared in a state where the pressure in the tank was reduced to 4 ⁇ 10 ⁇ 4 Pa in advance and the heating boat containing silver was further heated before transferring the base material.
- transparent electrodes of Samples 2-1 to 2-9 having a laminated structure of the nitrogen-containing layer and the upper electrode layer were obtained.
- the transparent electrode of the configuration of the present invention in which the film forming interval between the nitrogen-containing layer and the electrode layer is within 2 minutes has a light transmittance of 50% or more and a sheet resistance of 10 ⁇ / sq. Was less than. Therefore, although the electrode layer constituting the transparent electrode of the present invention is a thin film having a thickness of 12 nm or less, the continuity is ensured, so that the transparent electrode of the present invention has high light transmittance and conductivity. It was confirmed that
- FIGS. 16 to 18 show SEM images (magnification: 50,000 times) of the transparent electrodes of Samples 2-1 to 2-3.
- the nitrogen-containing layer and the electrode It was clear that the film formation state of the silver constituting the electrode layer was different depending on the time of the film formation interval with the layer.
- the transparent electrode of the configuration of the present invention in which the film forming interval between the nitrogen-containing layer and the electrode layer of Sample 2-1 shown in FIG. 16 is 1 minute the silver constituting the electrode layer provided adjacent to the nitrogen-containing layer is connected. It was.
- the transparent electrode of the present invention in which the film forming interval between the nitrogen-containing layer and the electrode layer of Sample 2-2 shown in FIG.
- the electrode layer provided adjacent to the nitrogen-containing layer is also configured.
- the silver to do was connected.
- the transparent electrode of Sample 2-1 shown in FIG. 16 has fewer parts not covered with silver (black display portion in the figure) than the transparent electrode of Sample 2-2 shown in FIG.
- the continuity of the constituent silver was high.
- the transparent electrode outside the range of the present invention in which the film forming interval between the nitrogen-containing layer and the electrode layer of Sample 2-3 shown in FIG. 18 is 10 minutes the electrode layer provided adjacent to the nitrogen-containing layer is configured.
- the continuity of silver was low. Furthermore, the part which is not coat
- FIGS. 19 to 21 showing SEM images (magnification: 50,000 times) of the transparent electrodes of Samples 2-4 to 2-6
- a nitrogen-containing layer and an electrode layer are similar to FIGS. 16 to 18 described above.
- the film forming state of silver constituting the electrode layer was different depending on the time of the film forming interval.
- FIGS. 22 to 24 showing SEM images (magnification: 50,000 times) of the transparent electrodes of Samples 2-7 to 2-9, as in FIGS.
- the film forming state of silver constituting the electrode layer was different depending on the time of the film forming interval between the containing layer and the electrode layer.
- the transparent electrode of the configuration of the present invention in which the film forming interval between the nitrogen-containing layer and the electrode layer is within 2 minutes, not the nuclear growth type (Volume-Weber: VW type) but the single layer growth type (Frank-van) It was confirmed that an electrode layer adjacent to the nitrogen-containing layer was formed by film growth closer to der Merwe (FM type).
- the material constituting the nitrogen-containing layer provided adjacent to the electrode layer is the same, the shorter the film formation interval between the nitrogen-containing layer and the electrode layer, the shorter the silver constituting the electrode layer (see FIG. It is confirmed that the white display portion in the middle is more connected and its continuity is high.
- Electrode layer EL, EL-1, EL-2, EL-3 ... Organic electroluminescent element (electronic device)
Abstract
Description
前記窒素含有層に隣接して設けられると共に、シート抵抗の測定が可能な12nm以下の膜厚を有し、銀または銀を主成分とした合金を用いて構成された電極層と
を備えた透明電極。
前記窒素含有層の成膜後2分以内に当該窒素含有層に隣接して成膜された層である共に、シート抵抗の測定が可能な12nm以下の膜厚を有し、銀または銀を主成分とした合金を用いて構成された電極層と
を備えた透明電極。
前記窒素含有層上に、シート抵抗の測定が可能な12nm以下の膜厚を有し、銀または銀を主成分とした合金を用いて構成された電極層を形成する工程と
を含む透明電極の製造方法。
前記窒素含有層の成膜後2分以内に、シート抵抗の測定が可能な12nm以下の膜厚を有し、銀または銀を主成分とした合金を用いて構成された電極層を当該窒素含有層に隣接させて成膜する工程と
を含む透明電極の製造方法。
1.透明電極
2.透明電極の用途
3.有機電界発光素子の第1例
4.有機電界発光素子の第2例
5.有機電界発光素子の第3例
6.有機電界発光素子の用途
7.照明装置-1
8.照明装置-2
図1は、本発明の透明電極の一構成例を示す断面模式図である。図1に示すように、透明電極1は、窒素含有層1aと、これに隣接して設けられた電極層1bとを積層した2層構造であり、例えば基材11の上部に、窒素含有層1a、電極層1bの順に設けられている。このうち、窒素含有層1aは、窒素原子を含んだ化合物を用いて構成された層であり、電極層1bは、銀または銀を主成分とした合金を用いて構成された層である。本実施形態においては、特にこの窒素含有層1aが、以降に詳細に説明するように、所定の成膜速度で形成されたところが特徴的である。また、以降に詳細に説明するように、電極層1bが、窒素含有層1aの成膜後所定時間以内に窒素含有層1aに隣接して成膜された構成としても良い。
電極層1bは、銀または銀を主成分とした合金を用いて構成された層であって、図1の断面模式図に示すように、窒素含有層1aに隣接して設けられた層である。この電極層1bは、シート抵抗の測定が可能な12nm以下の膜厚を有する。電極層1bは、シート抵抗の測定が可能な膜厚とすることにより、電極層1bを構成する金属が面内方向においての2次元的な連続性を備えたものとなり、電極用の膜としての実用性が確保されている。また電極層1bは、12nm以下の膜厚であることにより、電極層1bにおける吸収成分または反射成分が低く抑えられ、透明電極1の光透過率が確保されている。
窒素含有層1aは、0.3nm/s以上の成膜速度で成膜され、窒素原子を含んだ化合物を用いて構成された層である。より好ましくは、窒素含有層1aは、0.5nm/s以上の成膜速度で成膜された層である。このような窒素含有層1aは、電極層1bに隣接して設けられる。
一般式(1) (Ar1)n1-Y1
一般式(1)中におけるAr1は、下記一般式(A)で表される基を表す。
一般式(A)において、Y3で表される基としては、上記6員の芳香族環から導出される基であることが好ましく、さらに好ましくは、ベンゼン環から導出される基である。
一般式(A)において、Y4で表される基としては、上記6員の芳香族環から導出される基であることが好ましく、さらに好ましくは、窒素原子を環構成原子と含む芳香族複素環から導出される基であり、特に好ましくは、Y4がピリジン環から導出される基であることである。
一般式(A)で表される基の好ましい態様としては、下記一般式(A-1)、(A-2)、(A-3)または(A-4)のいずれかで表される基が挙げられる。
本発明では、上記一般式(1)で表される化合物の中でも、下記一般式(2)で表される化合物が好ましい。以下、一般式(2)で表される化合物について説明する。
本発明では、上記一般式(2)で表される化合物の中でも、さらに下記一般式(3)で表される化合物が好ましい。以下、一般式(3)で表される化合物について説明する。
以下に、本発明に係る一般式(1)、(2)、(3)、または(4)で表される化合物、及びその他の窒素含有化合物の具体例(1~125)を示すが、これらに限定されない。
以下に代表的な化合物の合成例として、化合物5の具体的な合成例を示すが、これに限定されない。
窒素雰囲気下、2,8-ジブロモジベンゾフラン(1.0モル)、カルバゾール(2.0モル)、銅粉末(3.0モル)、炭酸カリウム(1.5モル)を、DMAc(ジメチルアセトアミド)300ml中で混合し、130℃で24時間撹拌した。これによって得た反応液を室温まで冷却後、トルエン1Lを加え、蒸留水で3回洗浄し、減圧雰囲気下において洗浄物から溶媒を留去し、その残渣をシリカゲルフラッシュクロマトグラフィー(n-ヘプタン:トルエン=4:1~3:1)にて精製し、中間体1を収率85%で得た。
室温、大気下で中間体1(0.5モル)をDMF(ジメチルホルムアミド)100mlに溶解し、NBS(N-ブロモコハク酸イミド)(2.0モル)を加え、一晩室温で撹拌した。得られた沈殿を濾過し、メタノールで洗浄し、中間体2を収率92%で得た。
窒素雰囲気下、中間体2(0.25モル)、2-フェニルピリジン(1.0モル)、ルテニウム錯体[(η6-C6H6)RuCl2]2(0.05モル)、トリフェニルホスフィン(0.2モル)、炭酸カリウム(12モル)を、NMP(N-メチル-2-ピロリドン)3L中で混合し、140℃で一晩撹拌した。
以上のような透明電極1が形成される基材11は、例えばガラス、プラスチック等を挙げることができるが、これらに限定されない。また、基材11は透明であっても不透明であってもよい。本発明の透明電極1が、基材11側から光を取り出す電子デバイスに用いられる場合には、基材11は透明であることが好ましい。好ましく用いられる透明な基材11としては、ガラス、石英、透明樹脂フィルムを挙げることができる。
次に、透明電極1の製造方法を、図2を用いて説明する。
なお、窒素含有層1aの成膜後2分以内に、窒素含有層1aに隣接させて、電極層1bを成膜しても良い。より好ましくは、窒素含有層1aの成膜後1分以内に、窒素含有層1aに隣接させて、電極層1bを成膜する。
以上のような構成の透明電極1は、窒素原子を含んだ化合物を用いて構成された窒素含有層1aに隣接して、銀または銀を主成分とする合金からなる電極層1bを設けた構成である。これにより、窒素含有層1aの上部に電極層1bを成膜する際には、電極層1bを構成する銀原子が窒素含有層1aを構成する窒素原子を含んだ化合物と相互作用し、銀原子の窒素含有層1a表面においての拡散距離が減少し、銀の凝集が抑えられる。このため、一般的には核成長型(Volumer-Weber:VW型)での膜成長により島状に孤立し易い銀薄膜が、単層成長型(Frank-van der Merwe:FM型)の膜成長によって連続膜が成膜されるようになる。したがって、薄い膜厚でありながらも、均一な膜厚の電極層1bが得られるようになる。
また、電極層1bを、窒素含有層1aの成膜後2分以内に窒素含有層1bに隣接して成膜された層である構成、さらに好ましくは、窒素含有層1aの成膜後1分以内に窒素含有層1bに隣接して成膜された層である構成としたときには、後の実施例で詳細に説明するように、電極層1bが、より連続性の高い膜となることが確認されている。
上述した構成の透明電極1は、各種電子デバイスに用いることができる。電子デバイスの例としては、有機電界発光素子、LED(light Emitting Diode)、液晶素子、太陽電池、タッチパネル等が挙げられ、これらの電子デバイスにおいて光透過性を必要とされる電極部材として、上述の透明電極1を用いることができる。
以下では、用途の一例として、透明電極をアノードおよびカソードとして用いた有機電界発光素子の実施の形態を説明する。
<有機電界発光素子EL-1の構成>
図3は、本発明の電子デバイスの一例として、上述した透明電極1を用いた有機電界発光素子の第1例を示す断面構成図である。以下にこの図に基づいて有機電界発光素子の構成を説明する。
透明基板13は、先に説明した本発明の透明電極1が設けられる基材11であり、先に説明した基材11のうち光透過性を有する透明な基材11が用いられる。
透明電極1は、先に説明した本発明の透明電極1であり、透明基板13側から順に窒素含有層1aおよび電極層1bを順に成膜した構成である。ここでは特に、透明電極1はアノードとして機能するものであり、電極層1bが実質的なアノードとなる。
対向電極5-1は、発光機能層3に電子を供給するカソードとして機能する電極膜であり、金属、合金、有機または無機の導電性化合物、およびこれらの混合物が用いられる。具体的には、アルミニウム、銀、マグネシウム、リチウム、マグネシウム/銅混合物、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、インジウム、リチウム/アルミニウム混合物、希土類金属、ITO、ZnO、TiO2、SnO2等の酸化物半導体などが挙げられる。
本発明に用いられる発光層3cは、発光材料として燐光発光化合物が含有されている。
発光層3cに含有されるホスト化合物としては、室温(25℃)における燐光発光の燐光量子収率が0.1未満の化合物が好ましい。さらに好ましくは燐光量子収率が0.01未満である。また、発光層3cに含有される化合物の中で、その層中での体積比が50%以上であることが好ましい。
本発明で用いることのできる発光材料としては、燐光発光性化合物(燐光性化合物、燐光発光材料ともいう)が挙げられる。
発光層3cに含まれる化合物(燐光発光性化合物)は、下記一般式(5)で表される化合物であることが好ましい。
一般式(5)で表される化合物の中でも、下記一般式(6)で表される化合物であることがさらに好ましい。
上記一般式(6)で表される化合物の好ましい態様の一つとして、下記一般式(7)で表される化合物が挙げられる。
蛍光発光材料としては、クマリン系色素、ピラン系色素、シアニン系色素、クロコニウム系色素、スクアリウム系色素、オキソベンツアントラセン系色素、フルオレセイン系色素、ローダミン系色素、ピリリウム系色素、ペリレン系色素、スチルベン系色素、ポリチオフェン系色素、または希土類錯体系蛍光体等が挙げられる。
注入層とは、駆動電圧低下や発光輝度向上のために電極と発光層3cの間に設けられる層のことで、「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の第2編第2章「電極材料」(123~166頁)に詳細に記載されており、正孔注入層3aと電子注入層3eとがある。
正孔輸送層3bは、正孔を輸送する機能を有する正孔輸送材料からなり、広い意味で正孔注入層3a、電子阻止層も正孔輸送層3bに含まれる。正孔輸送層3bは単層または複数層設けることができる。
電子輸送層3dは、電子を輸送する機能を有する材料からなり、広い意味で電子注入層3e、正孔阻止層(図示せず)も電子輸送層3dに含まれる。電子輸送層3dは単層構造または複数層の積層構造として設けることができる。
阻止層は、上記の如く有機化合物薄膜の基本構成層の他に、必要に応じて設けられるものである。例えば、特開平11-204258号公報、同11-204359号公報、及び「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の237頁等に記載されている正孔阻止(ホールブロック)層がある。
補助電極15は、透明電極1の抵抗を下げる目的で設けるものであって、透明電極1の電極層1bに接して設けられる。補助電極15を形成する材料は、金、白金、銀、銅、アルミニウム等の抵抗が低い金属が好ましい。これらの金属は光透過性が低いため、光取り出し面13aからの発光光hの取り出しの影響のない範囲でパターン形成される。このような補助電極15の形成方法としては、蒸着法、スパッタリング法、印刷法、インクジェット法、エアロゾルジェット法などが挙げられる。補助電極15の線幅は、光を取り出す開口率の観点から50μm以下であることが好ましく、補助電極15の厚さは、導電性の観点から1μ以上であることが好ましい。
封止材17は、有機電界発光素子ELを覆うものであって、板状(フィルム状)の封止部材であって接着剤19によって透明基板13側に固定されるものであっても良く、封止膜であっても良い。このような封止材17は、有機電界発光素子ELにおける透明電極1および対向電極5-1の端子部分を露出させる状態で、少なくとも発光機能層3を覆う状態で設けられている。また封止材17に電極を設け、有機電界発光素子EL-1の透明電極1および対向電極5-1の端子部分と、この電極とを導通させるように構成されていても良い。
尚、ここでの図示は省略したが、透明基板13との間に有機電界発光素子ELおよび封止材17を挟んで保護膜もしくは保護板を設けても良い。この保護膜もしくは保護板は、有機電界発光素子ELを機械的に保護するためのものであり、特に封止材17が封止膜である場合には、有機電界発光素子ELに対する機械的な保護が十分ではないため、このような保護膜もしくは保護板を設けることが好ましい。
ここでは一例として、図3に示す有機電界発光素子ELの製造方法を説明する。
以上説明した有機電界発光素子EL-1は、本発明の導電性と光透過性とを兼ね備えた透明電極1をアノードとして用い、この上部に発光機能層3とカソードとなる対向電極5-1とを設けた構成である。このため、透明電極1と対向電極5-1との間に十分な電圧を印加して有機電界発光素子EL-1での高輝度発光を実現しつつ、透明電極1側からの発光光hの取り出し効率が向上することによる高輝度化を図ることが可能である。さらに、所定輝度を得るための駆動電圧の低減による発光寿命の向上を図ることも可能になる。
<有機電界発光素子の構成>
図4は、本発明の電子デバイスの一例として、上述した透明電極を用いた有機電界発光素子の第2例を示す断面構成図である。この図に示す第2例の有機電界発光素子EL-2が、図3を用いて説明した第1例の有機電界発光素子EL-1と異なるところは、透明電極1をカソードとして用いるところにある。以下、第1例と同様の構成要素についての重複する詳細な説明は省略し、第2例の有機電界発光素子EL-2の特徴的な構成を説明する。
以上説明した有機電界発光素子EL-2は、本発明の導電性と光透過性とを兼ね備えた透明電極1をカソードとして用い、この上部に発光機能層3とアノードとなる対向電極5-2とを設けた構成である。このため、第1例と同様に、透明電極1と対向電極5-1との間に十分な電圧を印加して有機電界発光素子EL-2での高輝度発光を実現しつつ、透明電極1側からの発光光hの取り出し効率が向上することによる高輝度化を図ることが可能である。さらに、所定輝度を得るための駆動電圧の低減による発光寿命の向上を図ることも可能になる。
<有機電界発光素子の構成>
図5は、本発明の電子デバイスの一例として、上述した透明電極を用いた有機電界発光素子の第3例を示す断面構成図である。この図に示す第3例の有機電界発光素子EL-3が、図3を用いて説明した第1例の有機電界発光素子EL-1と異なるところは、基板13’側に対向電極5-3を設け、この上部に発光機能層3と透明電極1とをこの順に積層したところにある。以下、第1例と同様の構成要素についての重複する詳細な説明は省略し、第3例の有機電界発光素子EL-3の特徴的な構成を説明する。
以上説明した有機電界発光素子EL-3は、発光機能層3の最上部を構成する電子注入性を有する電子輸送層3dを窒素含有層1aとし、この上部に電極層1bを設けることにより、窒素含有層1aとこの上部の電極層1bとからなる透明電極1をカソードとして設けた構成である。このため、第1例および第2例と同様に、透明電極1と対向電極5-3との間に十分な電圧を印加して有機電界発光素子EL-3での高輝度発光を実現しつつ、透明電極1側からの発光光hの取り出し効率が向上することによる高輝度化を図ることが可能である。さらに、所定輝度を得るための駆動電圧の低減による発光寿命の向上を図ることも可能になる。また以上のような構成において対向電極5-3が光透過性を有する場合であれば、この対向電極5-3からも発光光hを取り出すことができる。
上述した各構成の有機電界発光素子は、上述したように面発光体であるため各種の発光光源として用いることができる。例えば、家庭用照明や車内照明などの照明装置、時計や液晶用のバックライト、看板広告用照明、信号機の光源、光記憶媒体の光源、電子写真複写機の光源、光通信処理機の光源、光センサーの光源等が挙げられるが、これに限定するものではなく、特にカラーフィルターと組み合わせた液晶表示装置のバックライト、照明用光源としての用途に有効に用いることができる。
本発明の照明装置は、上記有機電界発光素子を有する。
図6には、上記各構成の有機電界発光素子を複数用いて発光面を大面積化した照明装置の断面構成図を示す。この図に示す照明装置は、例えば透明基板13上に有機電界発光素子EL-1を設けた複数の発光パネル21を、支持基板23上に複数配列する(すなわちタイリングする)ことによって発光面を大面積化した構成である。支持基板23は、封止材17を兼ねるものであっても良く、この支持基板23と、発光パネル21の透明基板13との間に有機電界発光素子EL-1を挟持する状態で各発光パネル21をタイリングする。支持基板23と透明基板13との間には接着剤19を充填し、これによって有機電界発光素子EL-1を封止しても良い。尚、発光パネル21の周囲には、アノードである透明電極1およびカソードである対向電極5-1の端部を露出させておく。ただし図面においては対向電極5-1の露出部分のみを図示した。
以下に説明するように、試料1-1~1-9の各透明電極を、導電性領域の面積が5cm×5cmとなるように作製した。
透明な無アルカリガラス製の基材を市販の真空蒸着装置の基材ホルダーに固定した。また、各透明電極の作製において、上記化合物10、化合物94、及び化合物99をそれぞれタンタル製抵抗加熱ボートに入れた。これらの基板ホルダーと加熱ボートとを真空蒸着装置の第1真空槽に取り付けた。また、タングステン製の抵抗加熱ボートに銀(Ag)を入れ、第2真空槽内に取り付けた。
上記で作製した試料1-1~1-9の各透明電極について、光透過率を測定した。光透過率の測定は、分光光度計(日立製作所製U-3300)を用い、試料と同じ基材をベースラインとして行った。この結果を上記表1に合わせて示した。
上記で作製した試料1-1~1-9の各透明電極について、シート抵抗値を測定した。シート抵抗値の測定は、抵抗率計(三菱化学社製MCP-T610)を用い、4端子4探針法定電流印加方式で行った。この結果を上記表1に合わせて示した。
表1において、窒素含有層を構成する材料が化合物10である試料1-1~1-3、窒素含有層を構成する材料が化合物94である試料1-4~1-6、及び窒素含有層を構成する材料が化合物99である試料1-7~1-9をそれぞれ比較した。試料1-1、1-4、及び1-7の窒素含有層の成膜速度が0.02nm/sである本発明の範囲外の透明電極では、シート抵抗が10Ω/sq.を超えていた。一方、試料1-2、1-5、及び1-8の窒素含有層の成膜速度が0.3nm/sである本発明構成の透明電極では、シート抵抗が10Ω/sq.未満と低く抑えられていた。さらに、試料1-3、1-6、及び1-9の窒素含有層の成膜速度が0.5nm/sである本発明構成の透明電極でも同様に、シート抵抗が10Ω/sq.未満と低く抑えられていた。このように全体の結果として、電極層に隣接して設けられた窒素含有層を構成する材料が同じであれば、窒素含有層の成膜速度が速いほど、シート抵抗が低く、光透過率が高かった。
以下に説明するように、試料2-1~2-9の各透明電極を、導電性領域の面積が5cm×5cmとなるように作製した。
透明な無アルカリガラス製の基材を市販の真空蒸着装置の基材ホルダーに固定した。また、各透明電極の作製において、上記化合物10、化合物94、及び化合物99をそれぞれタンタル製抵抗加熱ボートに入れた。これらの基板ホルダーと加熱ボートとを真空蒸着装置の第1真空槽に取り付けた。また、タングステン製の抵抗加熱ボートに銀(Ag)を入れ、第2真空槽内に取り付けた。
上記で作製した試料2-1~2-9の各透明電極について、光透過率を測定した。光透過率の測定は、分光光度計(日立製作所製U-3300)を用い、試料と同じ基材をベースラインとして行った。この結果を上記表2に合わせて示した。
上記で作製した試料2-1~2-9の各透明電極について、シート抵抗値を測定した。シート抵抗値の測定は、抵抗率計(三菱化学社製MCP-T610)を用い、4端子4探針法定電流印加方式で行った。この結果を上記表2に合わせて示した。
表2において、窒素含有層を構成する材料が化合物10であり、電極層の膜厚が8nmである試料2-1~2-3を比較した。試料2-1及び2-2の窒素含有層と電極層との成膜間隔が2分以内である本発明構成の透明電極では、光透過率が70%以上と高く、シート抵抗が10Ω/sq.未満と低く抑えられていた。一方、試料2-3の窒素含有層と電極層との成膜間隔が10分である本発明の範囲外の透明電極では、光透過率が60%であり、シート抵抗が10Ω/sq.を超えていた。
Claims (8)
- 0.3nm/s以上の成膜速度で成膜され、窒素原子を含んだ化合物を用いて構成された窒素含有層と、
前記窒素含有層に隣接して設けられると共に、シート抵抗の測定が可能な12nm以下の膜厚を有し、銀または銀を主成分とした合金を用いて構成された電極層と
を備えた透明電極。 - 前記窒素含有層は、0.5nm/s以上の成膜速度で成膜された
請求項1に記載の透明電極。 - 窒素原子を含んだ化合物を用いて構成された窒素含有層と、
前記窒素含有層の成膜後2分以内に当該窒素含有層に隣接して成膜された層である共に、シート抵抗の測定が可能な12nm以下の膜厚を有し、銀または銀を主成分とした合金を用いて構成された電極層と
を備えた透明電極。 - 前記電極層は、前記窒素含有層の成膜後1分以内に当該窒素含有層に隣接して成膜された層である
請求項3に記載の透明電極。 - 請求項1~4のいずれか1項に記載の透明電極を有する
電子デバイス。 - 前記電子デバイスが有機電界発光素子である
請求項5に記載の電子デバイス。 - 0.3nm/s以上の成膜速度により、窒素原子を含んだ化合物を用いて構成された窒素含有層を形成する工程と、
前記窒素含有層上に、シート抵抗の測定が可能な12nm以下の膜厚を有し、銀または銀を主成分とした合金を用いて構成された電極層を形成する工程と
を含む透明電極の製造方法。 - 窒素原子を含んだ化合物を用いて構成された窒素含有層を成膜する工程と、
前記窒素含有層の成膜後2分以内に、シート抵抗の測定が可能な12nm以下の膜厚を有し、銀または銀を主成分とした合金を用いて構成された電極層を当該窒素含有層に隣接させて成膜する工程と
を含む透明電極の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP13781194.9A EP2844040A4 (en) | 2012-04-24 | 2013-04-15 | TRANSPARENT ELECTRODE, ELECTRONIC DEVICE AND MANUFACTURING METHOD FOR THE TRANSPARENT ELECTRODE |
JP2014512473A JP6128117B2 (ja) | 2012-04-24 | 2013-04-15 | 透明電極の製造方法 |
CN201380021169.9A CN104412713B (zh) | 2012-04-24 | 2013-04-15 | 透明电极、电子器件及透明电极的制造方法 |
US14/384,878 US9876189B2 (en) | 2012-04-24 | 2013-04-15 | Transparent electrode, electronic device, and transparent electrode manufacturing method |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012098534 | 2012-04-24 | ||
JP2012-098534 | 2012-04-24 | ||
JP2012-102286 | 2012-04-27 | ||
JP2012102286 | 2012-04-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013161603A1 true WO2013161603A1 (ja) | 2013-10-31 |
Family
ID=49482927
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2013/061174 WO2013161603A1 (ja) | 2012-04-24 | 2013-04-15 | 透明電極、電子デバイス、および透明電極の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9876189B2 (ja) |
EP (1) | EP2844040A4 (ja) |
JP (1) | JP6128117B2 (ja) |
CN (1) | CN104412713B (ja) |
WO (1) | WO2013161603A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014103573A1 (ja) * | 2012-12-26 | 2014-07-03 | コニカミノルタ株式会社 | タッチパネル用透明電極、タッチパネル、表示装置、およびタッチパネル用透明電極の製造方法 |
WO2014109264A1 (ja) * | 2013-01-09 | 2014-07-17 | コニカミノルタ株式会社 | タッチパネル用透明電極、タッチパネル、表示装置、およびタッチパネル用透明電極の製造方法 |
JP2015122247A (ja) * | 2013-12-25 | 2015-07-02 | コニカミノルタ株式会社 | 透明電極及び電子デバイス |
JPWO2013162004A1 (ja) * | 2012-04-27 | 2015-12-24 | コニカミノルタ株式会社 | 電子デバイスの製造装置 |
JPWO2014103747A1 (ja) * | 2012-12-26 | 2017-01-12 | コニカミノルタ株式会社 | タッチパネル用透明電極、タッチパネル、表示装置、およびタッチパネル用透明電極の製造方法 |
EP3611771A1 (en) * | 2014-11-24 | 2020-02-19 | Samsung Display Co., Ltd. | Organic light emitting diode display including capping layer having high refractive index |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101997661B1 (ko) * | 2015-10-27 | 2019-07-08 | 주식회사 엘지화학 | 전도성 구조체, 이를 포함하는 전극 및 디스플레이 장치 |
KR102054276B1 (ko) | 2016-06-29 | 2019-12-10 | 삼성에스디아이 주식회사 | 유기 광전자 소자용 화합물, 유기 광전자 소자용 조성물, 유기 광전자 소자 및 표시 장치 |
KR102027961B1 (ko) | 2016-06-29 | 2019-10-02 | 삼성에스디아이 주식회사 | 유기 광전자 소자용 화합물, 유기 광전자 소자용 조성물, 유기 광전자 소자 및 표시 장치 |
KR102050000B1 (ko) * | 2016-07-12 | 2019-11-28 | 삼성에스디아이 주식회사 | 유기 광전자 소자용 화합물, 유기 광전자 소자용 조성물, 유기 광전자 소자 및 표시 장치 |
KR102054277B1 (ko) | 2016-07-29 | 2019-12-10 | 삼성에스디아이 주식회사 | 유기 광전자 소자용 조성물, 유기 광전자 소자 및 표시 장치 |
CN109644537A (zh) * | 2016-08-25 | 2019-04-16 | 柯尼卡美能达株式会社 | 透明电极和电子器件 |
KR102199076B1 (ko) | 2017-01-05 | 2021-01-07 | 삼성에스디아이 주식회사 | 유기 광전자 소자용 화합물, 유기 광전자 소자용 조성물, 유기 광전자 소자 및 표시 장치 |
CN114303064A (zh) * | 2020-08-04 | 2022-04-08 | 株式会社东芝 | 电极评价方法 |
CN116528603A (zh) * | 2023-05-31 | 2023-08-01 | 广州追光科技有限公司 | 一种有机太阳能电池及其制备方法 |
Citations (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5061569A (en) | 1990-07-26 | 1991-10-29 | Eastman Kodak Company | Electroluminescent device with organic electroluminescent medium |
JPH04297076A (ja) | 1991-01-31 | 1992-10-21 | Toshiba Corp | 有機el素子 |
JPH04308688A (ja) | 1991-04-08 | 1992-10-30 | Pioneer Electron Corp | 有機エレクトロルミネッセンス素子 |
JPH06139844A (ja) * | 1992-10-23 | 1994-05-20 | Sharp Corp | Ito導電膜およびその製造方法 |
JPH06325871A (ja) | 1993-05-18 | 1994-11-25 | Mitsubishi Kasei Corp | 有機電界発光素子 |
JPH08288069A (ja) | 1995-04-07 | 1996-11-01 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセンス素子 |
JPH0917574A (ja) | 1995-04-27 | 1997-01-17 | Pioneer Electron Corp | 有機エレクトロルミネッセンス素子 |
JPH0945479A (ja) | 1995-07-27 | 1997-02-14 | Hewlett Packard Co <Hp> | 有機エレクトロルミネセンス装置及び有機エレクトロルミネセンス装置の製造方法 |
JPH09260062A (ja) | 1996-03-25 | 1997-10-03 | Tdk Corp | 有機エレクトロルミネセンス素子 |
JPH1074586A (ja) | 1996-07-29 | 1998-03-17 | Eastman Kodak Co | エレクトロルミネセンスデバイスで用いられる二層電子注入電極 |
JPH10270172A (ja) | 1997-01-27 | 1998-10-09 | Junji Kido | 有機エレクトロルミネッセント素子 |
JPH11204258A (ja) | 1998-01-09 | 1999-07-30 | Sony Corp | 電界発光素子及びその製造方法 |
JPH11204359A (ja) | 1998-01-14 | 1999-07-30 | Tokin Corp | 圧粉磁芯の製造方法と製造装置 |
JPH11251067A (ja) | 1998-03-02 | 1999-09-17 | Junji Kido | 有機エレクトロルミネッセント素子 |
JP2000196140A (ja) | 1998-12-28 | 2000-07-14 | Sharp Corp | 有機エレクトロルミネッセンス素子とその製造法 |
JP2001102175A (ja) | 1999-09-29 | 2001-04-13 | Junji Kido | 有機エレクトロルミネッセント素子、有機エレクトロルミネッセント素子群及びその発光スペクトルの制御方法 |
JP2001257076A (ja) | 2000-03-13 | 2001-09-21 | Tdk Corp | 有機el素子 |
JP2001313179A (ja) | 2000-05-01 | 2001-11-09 | Mitsubishi Chemicals Corp | 有機電界発光素子 |
JP2001357977A (ja) | 2000-06-12 | 2001-12-26 | Fuji Photo Film Co Ltd | 有機電界発光素子 |
JP2002008860A (ja) | 2000-04-18 | 2002-01-11 | Mitsubishi Chemicals Corp | 有機電界発光素子 |
JP2002015623A (ja) | 2000-04-27 | 2002-01-18 | Mitsui Chemicals Inc | 透明電極 |
JP2002015871A (ja) | 2000-04-27 | 2002-01-18 | Toray Ind Inc | 発光素子 |
JP2002043056A (ja) | 2000-07-19 | 2002-02-08 | Canon Inc | 発光素子 |
JP2002075645A (ja) | 2000-08-29 | 2002-03-15 | Semiconductor Energy Lab Co Ltd | 発光装置 |
JP2002105445A (ja) | 2000-09-29 | 2002-04-10 | Fuji Photo Film Co Ltd | 有機発光素子材料及びそれを用いた有機発光素子 |
JP2002141173A (ja) | 2000-08-22 | 2002-05-17 | Semiconductor Energy Lab Co Ltd | 発光装置 |
JP2002203683A (ja) | 2000-10-30 | 2002-07-19 | Toyota Central Res & Dev Lab Inc | 有機電界発光素子 |
JP2002231453A (ja) | 2000-11-30 | 2002-08-16 | Mitsubishi Chemicals Corp | 有機電界発光素子 |
JP2002234888A (ja) | 2001-02-09 | 2002-08-23 | Mitsui Chemicals Inc | アミン化合物および該化合物を含有する有機電界発光素子 |
JP2002255934A (ja) | 2000-12-25 | 2002-09-11 | Fuji Photo Film Co Ltd | 新規化合物、その重合体、それらを利用した発光素子材料およびその発光素子 |
JP2002260861A (ja) | 2001-01-02 | 2002-09-13 | Eastman Kodak Co | 有機発光デバイス |
JP2002280183A (ja) | 2000-12-28 | 2002-09-27 | Toshiba Corp | 有機el素子および表示装置 |
JP2002299060A (ja) | 2001-03-30 | 2002-10-11 | Fuji Photo Film Co Ltd | 有機発光素子 |
JP2002305084A (ja) | 2000-12-25 | 2002-10-18 | Fuji Photo Film Co Ltd | 新規インドール誘導体およびそれを利用した発光素子 |
JP2002305083A (ja) | 2001-04-04 | 2002-10-18 | Mitsubishi Chemicals Corp | 有機電界発光素子 |
JP2002302516A (ja) | 2001-04-03 | 2002-10-18 | Fuji Photo Film Co Ltd | 新規ポリマーおよびそれを用いた発光素子 |
JP2002308837A (ja) | 2001-04-05 | 2002-10-23 | Fuji Photo Film Co Ltd | 新規化合物、およびそれを用いた発光素子 |
JP2002308855A (ja) | 2001-04-05 | 2002-10-23 | Fuji Photo Film Co Ltd | 新規化合物、およびそれを用いた発光素子 |
JP2002319491A (ja) | 2000-08-24 | 2002-10-31 | Fuji Photo Film Co Ltd | 発光素子及び新規重合体子 |
JP2002334786A (ja) | 2001-03-09 | 2002-11-22 | Sony Corp | 有機電界発光素子 |
JP2002334789A (ja) | 2001-03-09 | 2002-11-22 | Sony Corp | 有機電界発光素子 |
JP2002334788A (ja) | 2001-03-09 | 2002-11-22 | Sony Corp | 有機電界発光素子 |
JP2002334787A (ja) | 2001-03-09 | 2002-11-22 | Sony Corp | 有機電界発光素子 |
JP2002338579A (ja) | 2001-03-16 | 2002-11-27 | Fuji Photo Film Co Ltd | ヘテロ環化合物及びそれを用いた発光素子 |
JP2002343568A (ja) | 2001-05-10 | 2002-11-29 | Sony Corp | 有機電界発光素子 |
JP2002352957A (ja) | 2001-05-23 | 2002-12-06 | Honda Motor Co Ltd | 有機エレクトロルミネッセンス素子 |
JP2002363227A (ja) | 2001-04-03 | 2002-12-18 | Fuji Photo Film Co Ltd | 新規ポリマーおよびそれを用いた発光素子 |
JP2003003165A (ja) | 2001-06-25 | 2003-01-08 | Showa Denko Kk | 有機発光素子および発光材料 |
JP2003027048A (ja) | 2001-07-11 | 2003-01-29 | Fuji Photo Film Co Ltd | 発光素子 |
JP2004068143A (ja) | 2002-06-10 | 2004-03-04 | Konica Minolta Holdings Inc | 薄膜形成方法並びに該薄膜形成方法により薄膜が形成された基材 |
JP2006164961A (ja) | 2004-11-09 | 2006-06-22 | Ulvac Seimaku Kk | 積層型透明電極層の製造方法及びこの方法に使用する積層型透明電極形成用の積層体 |
JP2007123174A (ja) * | 2005-10-31 | 2007-05-17 | Canon Inc | 有機エレクトロルミネッセンス素子 |
JP2008216490A (ja) * | 2007-03-01 | 2008-09-18 | Kobe Steel Ltd | 表示デバイス用透明電極およびその作製方法 |
JP2009151963A (ja) | 2007-12-19 | 2009-07-09 | Institute Of Physical & Chemical Research | 透明電極およびその製造方法 |
JP2011077028A (ja) * | 2009-09-04 | 2011-04-14 | Hitachi Displays Ltd | 有機el表示装置 |
WO2013073356A1 (ja) * | 2011-11-17 | 2013-05-23 | コニカミノルタ株式会社 | 透明電極、および電子デバイス |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01114802A (ja) | 1987-10-28 | 1989-05-08 | Toshiba Corp | 光干渉膜 |
FR2748469B1 (fr) * | 1996-05-07 | 1998-07-31 | Thomson Csf | Utilisation d'une barriere en nitrure pour eviter la diffusion d'argent dans du verre |
US6951689B1 (en) * | 1998-01-21 | 2005-10-04 | Canon Kabushiki Kaisha | Substrate with transparent conductive layer, and photovoltaic element |
KR20090091175A (ko) * | 2006-11-17 | 2009-08-26 | 쌩-고벵 글래스 프랑스 | 유기 발광 소자용 전극, 산 식각 및 이를 포함하는 유기 발광 소자 |
JP2009277986A (ja) * | 2008-05-16 | 2009-11-26 | Sony Corp | 有機電界発光素子および表示装置 |
JP2011054419A (ja) * | 2009-09-02 | 2011-03-17 | Konica Minolta Holdings Inc | 透明電極、有機エレクトロルミネッセンス素子、および有機薄膜太陽電池素子 |
FR2977078B1 (fr) | 2011-06-27 | 2013-06-28 | Saint Gobain | Substrat conducteur pour cellule photovoltaique |
EP2844039A4 (en) | 2012-04-23 | 2016-07-06 | Konica Minolta Inc | TRANSPARENT ELECTRODE, ELECTRONIC DEVICE AND ORGANIC ELECTROLUMINESCENE ELEMENT |
-
2013
- 2013-04-15 US US14/384,878 patent/US9876189B2/en active Active
- 2013-04-15 EP EP13781194.9A patent/EP2844040A4/en not_active Withdrawn
- 2013-04-15 WO PCT/JP2013/061174 patent/WO2013161603A1/ja active Application Filing
- 2013-04-15 JP JP2014512473A patent/JP6128117B2/ja active Active
- 2013-04-15 CN CN201380021169.9A patent/CN104412713B/zh not_active Expired - Fee Related
Patent Citations (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5061569A (en) | 1990-07-26 | 1991-10-29 | Eastman Kodak Company | Electroluminescent device with organic electroluminescent medium |
JPH04297076A (ja) | 1991-01-31 | 1992-10-21 | Toshiba Corp | 有機el素子 |
JPH04308688A (ja) | 1991-04-08 | 1992-10-30 | Pioneer Electron Corp | 有機エレクトロルミネッセンス素子 |
JPH06139844A (ja) * | 1992-10-23 | 1994-05-20 | Sharp Corp | Ito導電膜およびその製造方法 |
JPH06325871A (ja) | 1993-05-18 | 1994-11-25 | Mitsubishi Kasei Corp | 有機電界発光素子 |
JPH08288069A (ja) | 1995-04-07 | 1996-11-01 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセンス素子 |
JPH0917574A (ja) | 1995-04-27 | 1997-01-17 | Pioneer Electron Corp | 有機エレクトロルミネッセンス素子 |
JPH0945479A (ja) | 1995-07-27 | 1997-02-14 | Hewlett Packard Co <Hp> | 有機エレクトロルミネセンス装置及び有機エレクトロルミネセンス装置の製造方法 |
JPH09260062A (ja) | 1996-03-25 | 1997-10-03 | Tdk Corp | 有機エレクトロルミネセンス素子 |
JPH1074586A (ja) | 1996-07-29 | 1998-03-17 | Eastman Kodak Co | エレクトロルミネセンスデバイスで用いられる二層電子注入電極 |
JPH10270172A (ja) | 1997-01-27 | 1998-10-09 | Junji Kido | 有機エレクトロルミネッセント素子 |
JPH11204258A (ja) | 1998-01-09 | 1999-07-30 | Sony Corp | 電界発光素子及びその製造方法 |
JPH11204359A (ja) | 1998-01-14 | 1999-07-30 | Tokin Corp | 圧粉磁芯の製造方法と製造装置 |
JPH11251067A (ja) | 1998-03-02 | 1999-09-17 | Junji Kido | 有機エレクトロルミネッセント素子 |
JP2000196140A (ja) | 1998-12-28 | 2000-07-14 | Sharp Corp | 有機エレクトロルミネッセンス素子とその製造法 |
JP2001102175A (ja) | 1999-09-29 | 2001-04-13 | Junji Kido | 有機エレクトロルミネッセント素子、有機エレクトロルミネッセント素子群及びその発光スペクトルの制御方法 |
JP2001257076A (ja) | 2000-03-13 | 2001-09-21 | Tdk Corp | 有機el素子 |
JP2002008860A (ja) | 2000-04-18 | 2002-01-11 | Mitsubishi Chemicals Corp | 有機電界発光素子 |
JP2002015871A (ja) | 2000-04-27 | 2002-01-18 | Toray Ind Inc | 発光素子 |
JP2002015623A (ja) | 2000-04-27 | 2002-01-18 | Mitsui Chemicals Inc | 透明電極 |
JP2001313179A (ja) | 2000-05-01 | 2001-11-09 | Mitsubishi Chemicals Corp | 有機電界発光素子 |
JP2001357977A (ja) | 2000-06-12 | 2001-12-26 | Fuji Photo Film Co Ltd | 有機電界発光素子 |
JP2002043056A (ja) | 2000-07-19 | 2002-02-08 | Canon Inc | 発光素子 |
JP2002141173A (ja) | 2000-08-22 | 2002-05-17 | Semiconductor Energy Lab Co Ltd | 発光装置 |
JP2002319491A (ja) | 2000-08-24 | 2002-10-31 | Fuji Photo Film Co Ltd | 発光素子及び新規重合体子 |
JP2002075645A (ja) | 2000-08-29 | 2002-03-15 | Semiconductor Energy Lab Co Ltd | 発光装置 |
JP2002105445A (ja) | 2000-09-29 | 2002-04-10 | Fuji Photo Film Co Ltd | 有機発光素子材料及びそれを用いた有機発光素子 |
JP2002203683A (ja) | 2000-10-30 | 2002-07-19 | Toyota Central Res & Dev Lab Inc | 有機電界発光素子 |
JP2002231453A (ja) | 2000-11-30 | 2002-08-16 | Mitsubishi Chemicals Corp | 有機電界発光素子 |
JP2002255934A (ja) | 2000-12-25 | 2002-09-11 | Fuji Photo Film Co Ltd | 新規化合物、その重合体、それらを利用した発光素子材料およびその発光素子 |
JP2002305084A (ja) | 2000-12-25 | 2002-10-18 | Fuji Photo Film Co Ltd | 新規インドール誘導体およびそれを利用した発光素子 |
JP2002280183A (ja) | 2000-12-28 | 2002-09-27 | Toshiba Corp | 有機el素子および表示装置 |
JP2002260861A (ja) | 2001-01-02 | 2002-09-13 | Eastman Kodak Co | 有機発光デバイス |
JP2002234888A (ja) | 2001-02-09 | 2002-08-23 | Mitsui Chemicals Inc | アミン化合物および該化合物を含有する有機電界発光素子 |
JP2002334786A (ja) | 2001-03-09 | 2002-11-22 | Sony Corp | 有機電界発光素子 |
JP2002334789A (ja) | 2001-03-09 | 2002-11-22 | Sony Corp | 有機電界発光素子 |
JP2002334788A (ja) | 2001-03-09 | 2002-11-22 | Sony Corp | 有機電界発光素子 |
JP2002334787A (ja) | 2001-03-09 | 2002-11-22 | Sony Corp | 有機電界発光素子 |
JP2002338579A (ja) | 2001-03-16 | 2002-11-27 | Fuji Photo Film Co Ltd | ヘテロ環化合物及びそれを用いた発光素子 |
JP2002299060A (ja) | 2001-03-30 | 2002-10-11 | Fuji Photo Film Co Ltd | 有機発光素子 |
JP2002302516A (ja) | 2001-04-03 | 2002-10-18 | Fuji Photo Film Co Ltd | 新規ポリマーおよびそれを用いた発光素子 |
JP2002363227A (ja) | 2001-04-03 | 2002-12-18 | Fuji Photo Film Co Ltd | 新規ポリマーおよびそれを用いた発光素子 |
JP2002305083A (ja) | 2001-04-04 | 2002-10-18 | Mitsubishi Chemicals Corp | 有機電界発光素子 |
JP2002308837A (ja) | 2001-04-05 | 2002-10-23 | Fuji Photo Film Co Ltd | 新規化合物、およびそれを用いた発光素子 |
JP2002308855A (ja) | 2001-04-05 | 2002-10-23 | Fuji Photo Film Co Ltd | 新規化合物、およびそれを用いた発光素子 |
JP2002343568A (ja) | 2001-05-10 | 2002-11-29 | Sony Corp | 有機電界発光素子 |
JP2002352957A (ja) | 2001-05-23 | 2002-12-06 | Honda Motor Co Ltd | 有機エレクトロルミネッセンス素子 |
JP2003003165A (ja) | 2001-06-25 | 2003-01-08 | Showa Denko Kk | 有機発光素子および発光材料 |
JP2003027048A (ja) | 2001-07-11 | 2003-01-29 | Fuji Photo Film Co Ltd | 発光素子 |
JP2004068143A (ja) | 2002-06-10 | 2004-03-04 | Konica Minolta Holdings Inc | 薄膜形成方法並びに該薄膜形成方法により薄膜が形成された基材 |
JP2006164961A (ja) | 2004-11-09 | 2006-06-22 | Ulvac Seimaku Kk | 積層型透明電極層の製造方法及びこの方法に使用する積層型透明電極形成用の積層体 |
JP2007123174A (ja) * | 2005-10-31 | 2007-05-17 | Canon Inc | 有機エレクトロルミネッセンス素子 |
JP2008216490A (ja) * | 2007-03-01 | 2008-09-18 | Kobe Steel Ltd | 表示デバイス用透明電極およびその作製方法 |
JP2009151963A (ja) | 2007-12-19 | 2009-07-09 | Institute Of Physical & Chemical Research | 透明電極およびその製造方法 |
JP2011077028A (ja) * | 2009-09-04 | 2011-04-14 | Hitachi Displays Ltd | 有機el表示装置 |
WO2013073356A1 (ja) * | 2011-11-17 | 2013-05-23 | コニカミノルタ株式会社 | 透明電極、および電子デバイス |
Non-Patent Citations (12)
Title |
---|
"Yuki EL Soshi To Sono Kogyoka Saizensen", 30 November 1998, N. T. S CO. , LTD., article "Denkyoku Zairyo", pages: 123 - 166 |
"Yuki EL Soshi To Sono Kogyoka Saizensen", 30 November 1998, N. T. S CO., LTD., pages: 237 |
EUROPEAN JOURNAL OF ORGANIC CHEMISTRY, vol. 4, 2004, pages 695 - 709 |
INORGANIC CHEMISTRY, vol. 30, no. 8, 1991, pages 1685 - 1687 |
INORGANIC CHEMISTRY, vol. 40, no. 7, 2001, pages 1704 - 1711 |
INORGANIC CHEMISTRY, vol. 41, no. 12, 2002, pages 3055 - 3066 |
J. AM. CHEM. SOC., vol. 123, 2001, pages 4304 |
J. APPL. PHYS., vol. 95, 2004, pages 5773 |
J. HUANG, APPLIED PHYSICS LETTERS, vol. 80, 2002, pages 139 |
NEW JOURNAL OF CHEMISTRY, vol. 26, 2002, pages 1171 |
ORGANIC LETTER, vol. 3, no. 16, 2001, pages 2579 - 2581 |
See also references of EP2844040A4 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2013162004A1 (ja) * | 2012-04-27 | 2015-12-24 | コニカミノルタ株式会社 | 電子デバイスの製造装置 |
WO2014103573A1 (ja) * | 2012-12-26 | 2014-07-03 | コニカミノルタ株式会社 | タッチパネル用透明電極、タッチパネル、表示装置、およびタッチパネル用透明電極の製造方法 |
JPWO2014103747A1 (ja) * | 2012-12-26 | 2017-01-12 | コニカミノルタ株式会社 | タッチパネル用透明電極、タッチパネル、表示装置、およびタッチパネル用透明電極の製造方法 |
WO2014109264A1 (ja) * | 2013-01-09 | 2014-07-17 | コニカミノルタ株式会社 | タッチパネル用透明電極、タッチパネル、表示装置、およびタッチパネル用透明電極の製造方法 |
JP2015122247A (ja) * | 2013-12-25 | 2015-07-02 | コニカミノルタ株式会社 | 透明電極及び電子デバイス |
EP3611771A1 (en) * | 2014-11-24 | 2020-02-19 | Samsung Display Co., Ltd. | Organic light emitting diode display including capping layer having high refractive index |
US10985340B2 (en) | 2014-11-24 | 2021-04-20 | Samsung Display Co., Ltd. | Organic light emitting diode display including capping layer having high refractive index |
Also Published As
Publication number | Publication date |
---|---|
CN104412713B (zh) | 2017-07-14 |
US9876189B2 (en) | 2018-01-23 |
JPWO2013161603A1 (ja) | 2015-12-24 |
EP2844040A1 (en) | 2015-03-04 |
CN104412713A (zh) | 2015-03-11 |
EP2844040A4 (en) | 2015-12-30 |
JP6128117B2 (ja) | 2017-05-17 |
US20150028320A1 (en) | 2015-01-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6070567B2 (ja) | 透明電極、および電子デバイス | |
JP6003981B2 (ja) | 透明電極、電子デバイス、および有機電界発光素子 | |
JP6128117B2 (ja) | 透明電極の製造方法 | |
JP5943005B2 (ja) | 透明電極、電子デバイス、有機電界発光素子、および有機電界発光素子の製造方法 | |
JP6137170B2 (ja) | 有機電界発光素子 | |
JP2013229218A (ja) | 表示装置 | |
JP6256349B2 (ja) | 透明電極、及び、電子デバイス | |
WO2014084170A1 (ja) | 透明電極、電子デバイス、および有機電界発光素子 | |
JP6119742B2 (ja) | 透明電極、透明電極の製造方法、電子デバイス、および有機電界発光素子 | |
WO2014030666A1 (ja) | 透明電極、電子デバイス、および透明電極の製造方法 | |
JP6241281B2 (ja) | 透明電極および電子デバイス | |
JPWO2013161750A1 (ja) | 透明電極、電子デバイス及び有機エレクトロルミネッセンス素子 | |
JP6028794B2 (ja) | 電子デバイスの製造装置 | |
JP6070320B2 (ja) | 透明電極付き基板、及び、電子デバイス | |
JP5998789B2 (ja) | 透明電極、及び電子デバイス | |
JP6366221B2 (ja) | 透明電極、及び電子デバイス | |
WO2013137234A1 (ja) | 透明電極、電子デバイス、および透明電極の製造方法 | |
JP6241282B2 (ja) | 透明電極および電子デバイス | |
WO2013027510A1 (ja) | 有機エレクトロルミネッセンス素子及び照明装置 | |
JP5817557B2 (ja) | 透明バリア膜、および電子デバイス | |
WO2014098014A1 (ja) | 透明電極、及び、電子デバイス | |
JP2014229555A (ja) | 透明電極、透明電極の製造方法、及び、電子デバイス |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 13781194 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2014512473 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14384878 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2013781194 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |