WO2013022068A1 - 感光性樹脂組成物、感光性フィルム、永久レジスト及び永久レジストの製造方法 - Google Patents
感光性樹脂組成物、感光性フィルム、永久レジスト及び永久レジストの製造方法 Download PDFInfo
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- WO2013022068A1 WO2013022068A1 PCT/JP2012/070369 JP2012070369W WO2013022068A1 WO 2013022068 A1 WO2013022068 A1 WO 2013022068A1 JP 2012070369 W JP2012070369 W JP 2012070369W WO 2013022068 A1 WO2013022068 A1 WO 2013022068A1
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- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical class C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- ALVYUZIFSCKIFP-UHFFFAOYSA-N triethoxy(2-methylpropyl)silane Chemical compound CCO[Si](CC(C)C)(OCC)OCC ALVYUZIFSCKIFP-UHFFFAOYSA-N 0.000 description 1
- WUMSTCDLAYQDNO-UHFFFAOYSA-N triethoxy(hexyl)silane Chemical compound CCCCCC[Si](OCC)(OCC)OCC WUMSTCDLAYQDNO-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- FBBATURSCRIBHN-UHFFFAOYSA-N triethoxy-[3-(3-triethoxysilylpropyldisulfanyl)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCSSCCC[Si](OCC)(OCC)OCC FBBATURSCRIBHN-UHFFFAOYSA-N 0.000 description 1
- VTHOKNTVYKTUPI-UHFFFAOYSA-N triethoxy-[3-(3-triethoxysilylpropyltetrasulfanyl)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCSSSSCCC[Si](OCC)(OCC)OCC VTHOKNTVYKTUPI-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- LFRDHGNFBLIJIY-UHFFFAOYSA-N trimethoxy(prop-2-enyl)silane Chemical compound CO[Si](OC)(OC)CC=C LFRDHGNFBLIJIY-UHFFFAOYSA-N 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- NLSXASIDNWDYMI-UHFFFAOYSA-N triphenylsilanol Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(O)C1=CC=CC=C1 NLSXASIDNWDYMI-UHFFFAOYSA-N 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/14—Polycondensates modified by chemical after-treatment
- C08G59/1433—Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds
- C08G59/1438—Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds containing oxygen
- C08G59/1455—Monocarboxylic acids, anhydrides, halides, or low-molecular-weight esters thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/182—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing using pre-adducts of epoxy compounds with curing agents
- C08G59/186—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing using pre-adducts of epoxy compounds with curing agents with acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
- C08L63/10—Epoxy resins modified by unsaturated compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0385—Macromolecular compounds which are rendered insoluble or differentially wettable using epoxidised novolak resin
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/285—Permanent coating compositions
- H05K3/287—Photosensitive compositions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0209—Inorganic, non-metallic particles
Definitions
- the present invention relates to a photosensitive resin composition, a photosensitive film, a permanent resist, and a method for producing a permanent resist.
- the present invention relates to a photosensitive resin composition suitable for producing a permanent resist used for printed wiring boards and semiconductor package substrates.
- the density of semiconductor package substrates has been increasing, and the photosensitive solder resist (hereinafter also referred to as permanent resist) used for the outermost layer is more than ever. Reliability is required. Specifically, the need for crack resistance is increasing as the number of substrates increases and the size of the chip increases, and more crack resistance is required, especially during temperature cycle testing.
- HAST super accelerated life test
- the super accelerated life test is a very severe test for evaluating insulation resistance by applying a predetermined voltage to a comb electrode of 8 ⁇ m / 8 ⁇ m in an environment of 130 ° C. and 85% RH.
- solder resist for use in a semiconductor package substrate for example, a photosensitive resin composition using an acid-modified epoxy resin that can be developed with an alkali that is obtained by adding acrylic acid to a cresol novolac type epoxy resin and then modifying an acid anhydride (for example, for the purpose of improving resistance to TCT (temperature cycle test) and a photosensitive resin composition further containing an elastomer (for example, see Patent Document 2) has been used.
- a photosensitive resin composition containing a silica filler to improve reflow resistance (see, for example, Patent Document 3) and a photopolymerizable compound having a specific structure to improve HAST resistance are used.
- the photosensitive resin composition (for example, refer patent document 4) was used.
- the conventional photosensitive resin composition has room for improvement particularly in satisfying both crack resistance and HAST resistance in the applications where high reliability is required as described above. Moreover, in order to satisfy the crack resistance of the solder resist used for the semiconductor package substrate of a high multilayer substrate and a large chip, the photosensitive resin composition having a low CTE (thermal expansion coefficient) and a high Tg (glass transition temperature). However, there is room for improvement in the conventional photosensitive resin composition.
- the present invention relates to an alkali developable photosensitive resin composition having a low CTE, a high Tg, excellent crack resistance in a high multilayer substrate, and excellent HAST resistance at an ultrafine pitch, and a photosensitive resin using the same. It aims at providing the manufacturing method of a conductive film, a permanent resist, and a permanent resist.
- the first aspect of the present invention comprises (a) component: acid-modified epoxy resin, (b) component: photopolymerizable monomer having an ethylenically unsaturated group, (c) component: photopolymerization initiator, and (d) component.
- the component (b) contains a photopolymerizable monomer having a tricyclodecane structure and a urethane bond.
- the component (e) contains a silica filler having a maximum particle size of 1 ⁇ m or less, exceeding 60 parts by mass with respect to a total of 100 parts by mass of the component (a) and the component (b). .
- Such photosensitive resin composition has low CTE, high Tg, excellent crack resistance in high multi-layer substrates, excellent HAST resistance at ultra fine pitch, and excellent in resolution and gold plating resistance. It can be used as a simple solder resist.
- the average particle size and the maximum particle size are those measured using the microtrack method or the nanotrack method.
- the acid-modified bisphenol novolac type epoxy resin is obtained by adding a polybasic acid anhydride to an esterified product of an epoxy resin having a structure represented by the following general formula (1) and an ethylenically unsaturated group-containing monocarboxylic acid. It is preferable to include an acid-modified bisphenol novolac type epoxy resin.
- R 1 represents a hydrogen atom or a glycidyl group
- R 2 represents a hydrogen atom or a methyl group
- n represents 1 or more.
- a plurality of R 1 and R 2 may be the same or different.
- the photopolymerizable monomer having a tricyclodecane structure and a urethane bond preferably includes a photopolymerizable monomer having a partial structure represented by the following general formula (2) or general formula (3).
- Tg and HAST resistance can be improved more.
- R 3 , R 4 , R 5 and R 6 represent a direct bond, an alkylene group or an arylene group.
- the component (b) preferably contains a urethane compound obtained by reacting a diol compound having a tricyclodecane structure, a diisocyanate compound, and a compound having an ethylenically unsaturated group and a hydroxyl group.
- the photosensitive resin composition preferably further contains a curing accelerator having an amino group in the molecule.
- a curing accelerator having an amino group in the molecule preferably further contains a curing accelerator having an amino group in the molecule.
- the second aspect of the present invention relates to a photosensitive film comprising a support and a photosensitive layer made of the photosensitive resin composition provided on the support.
- a step of providing a photosensitive layer comprising the photosensitive resin composition on a substrate a step of pattern irradiating the photosensitive layer with actinic rays, and developing the photosensitive layer to form a permanent resist. And a step of forming a permanent resist.
- the 4th aspect of this invention is related with the permanent resist which consists of hardened
- the permanent resist of the present invention can be obtained by curing the photosensitive resin composition of the present invention with light and / or heat. Therefore, in the cured product, the reactive group of the photosensitive resin composition is partially or entirely disappeared by reaction due to light and / or heat curing.
- a photosensitive resin composition that can be developed with an alkali, has a low CTE, has a high Tg, and has both crack resistance in a high multilayer substrate and HAST resistance of an ultrafine pitch, and the same are used.
- a photosensitive film, a permanent resist, and a method for producing a permanent resist can be provided.
- the photosensitive resin composition of the present invention comprises (a) component: acid-modified epoxy resin, (b) component: a photopolymerizable monomer having an ethylenically unsaturated group, (c) component: a photopolymerization initiator, (d) Component: epoxy resin, and (e) component: containing an inorganic filler, the component (a) contains an acid-modified bisphenol novolac type epoxy resin, and at least one of the following conditions (I) and (II) It is the photosensitive resin composition which satisfy
- the component (b) contains a photopolymerizable monomer having a tricyclodecane structure and a urethane bond.
- the component (e) contains a silica filler having a maximum particle size of 1 ⁇ m or less in excess of 60 parts by mass with respect to a total of 100 parts by mass of the component (a) and the component (b).
- the photosensitive resin composition of the present invention contains an acid-modified epoxy resin as the component (a).
- the acid-modified epoxy resin can be obtained, for example, by adding a polybasic acid anhydride (a3) to an esterified product of an epoxy resin (a1) and an ethylenically unsaturated group-containing monocarboxylic acid (a2). it can.
- the acid-modified epoxy resin can be obtained by the following two-stage reaction.
- first reaction the epoxy group of the epoxy resin (a1) reacts with the carboxyl group of the ethylenically unsaturated group-containing monocarboxylic acid (a2), A hydroxyl group is formed.
- second reaction the next reaction (hereinafter referred to as “second reaction” for convenience), the hydroxyl group produced in the first reaction and / or the hydroxyl group originally contained in the epoxy resin (a1) and the polybasic acid anhydride (a3) are used. ) Is considered to react with the acid anhydride group.
- the epoxy resin (a1) is not particularly limited as long as it is a compound having one or more epoxy groups.
- a novolac type epoxy resin a trisphenol methane type epoxy resin, a bisphenol A type epoxy resin, a bisphenol F type
- examples thereof include epoxy resins, bisphenol S-type epoxy resins, biphenyl-type epoxy resins, and bisphenol novolac-type epoxy resins.
- Examples of the ethylenically unsaturated group-containing monocarboxylic acid (a2) include (meth) acrylic acid, crotonic acid, and cinnamic acid.
- the ethylenically unsaturated group-containing monocarboxylic acid (a2) is a half ester compound of a polybasic acid anhydride and a (meth) acrylate compound having a hydroxyl group, or a dibasic acid and an unsaturated monoglycidyl compound.
- a half ester compound may be used.
- a half-ester compound refers to a compound in which only one of the carboxyl groups of a compound having two carboxyl groups is esterified.
- Examples of the half-ester reaction product include anhydrides such as phthalic acid, tetrahydrophthalic acid, hexahydrophthalic acid, maleic acid, and succinic acid, hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, and tris ( Examples thereof include a reaction product obtained by reacting hydroxyethyl) isocyanurate di (meth) acrylate, glycidyl (meth) acrylate and the like in an equimolar ratio by a conventional method.
- anhydrides such as phthalic acid, tetrahydrophthalic acid, hexahydrophthalic acid, maleic acid, and succinic acid, hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, and tris
- Examples thereof include a reaction product obtained by reacting hydroxyethyl) isocyanurate di (meth) acrylate, glycidy
- the ethylenically unsaturated group-containing monocarboxylic acid (a2) can be used alone or in combination of two or more.
- (meth) acrylic acid is preferable.
- (meth) acryl means acryl or methacryl, and the same applies to other similar expressions such as (meth) acrylate.
- Examples of the (meth) acrylate having a hydroxyl group include hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, hydroxybutyl (meth) acrylate, polyethylene glycol mono (meth) acrylate, trimethylolpropane di (meth) acrylate, Examples include pentaerythritol tri (meth) acrylate and dipentaerythritol hexa (meth) acrylate.
- polybasic acid anhydride (a3) examples include succinic anhydride, maleic anhydride, tetrahydrophthalic anhydride, phthalic anhydride, methyltetrahydrophthalic anhydride, ethyltetrahydrophthalic anhydride, hexahydrophthalic anhydride, methylhexahydro Mention may be made of phthalic anhydride, ethylhexahydrophthalic anhydride, itaconic anhydride and trimellitic anhydride.
- the ratio of the ethylenically unsaturated group-containing monocarboxylic acid (a2) is preferably 0.7 to 1.05 equivalents relative to 1 equivalent of the epoxy group of the epoxy resin (a1). More preferred is 0.8 to 1.0 equivalent.
- the epoxy resin (a1) and the ethylenically unsaturated group-containing monocarboxylic acid (a2) can be dissolved and reacted in an organic solvent.
- organic solvent include ketones such as ethyl methyl ketone and cyclohexanone, aromatic hydrocarbons such as toluene, xylene, and tetramethylbenzene; methyl cellosolve, butyl cellosolve, methyl carbitol, butyl carbitol, propylene glycol monomethyl ether, Glycol ethers such as dipropylene glycol monoethyl ether, dipropylene glycol diethyl ether and triethylene glycol monoethyl ether; esters such as ethyl acetate, butyl acetate, butyl cellosolve acetate and carbitol acetate; aliphatic carbonization such as octane and decane Hydrogen: Petroleum solvents such as petroleum ether,
- the component (a) has an acid value of preferably 20 to 180 mgKOH / g, more preferably 30 to 150 mgKOH / g, particularly preferably 40 to 120 mgKOH / g, and 50 to 90 mgKOH / g. It is very preferable that it is g. Thereby, the developability with the alkaline aqueous solution of the photosensitive resin composition becomes good, and an excellent resolution can be obtained.
- the acid value measurement conditions are the same as in the examples.
- the weight average molecular weight of the component (a) is preferably 2000 to 30000, more preferably 3000 to 20000, and particularly preferably 5000 to 15000 from the viewpoint of coating properties. These can also be used in combination of two or more resins having different molecular weights. In this specification, the conditions for measuring the weight average molecular weight are the same as in the examples.
- Examples of the acid-modified epoxy resin include phenol novolac-type acid-modified epoxy acrylate, bisphenol F-type acid-modified epoxy acrylate, and urethane-modified bisphenol A-type acid-modified epoxy acrylate.
- Cresol novolac type acid-modified epoxy acrylate is, for example, EXP-2810 (manufactured by DIC Corporation), bisphenol F type acid-modified epoxy acrylate is ZFR-1158 (manufactured by Nippon Kayaku Co., Ltd.), urethane-modified bisphenol A type acid-modified epoxy Acrylate is commercially available as UXE-3024 (manufactured by Nippon Kayaku Co., Ltd.).
- the component contains an acid-modified bisphenol novolac type epoxy resin.
- the acid-modified bisphenol novolac type epoxy resin can be used without particular limitation.
- the bisphenol structure in the acid-modified bisphenol novolac epoxy resin may be a bisphenol A structure or a bisphenol F structure, but is an acid-modified bisphenol F novolac epoxy resin in terms of excellent crack resistance. It is preferable.
- the acid-modified bisphenol novolac type epoxy resin is a polybasic esterified product of an epoxy resin having a structure represented by the following formula (1) and an ethylenically unsaturated group-containing monocarboxylic acid (a2). It is preferable to use an acid-modified bisphenol novolac type epoxy resin to which an acid anhydride (a3) is added.
- R 1 represents a hydrogen atom or a glycidyl group
- R 2 represents a hydrogen atom or a methyl group
- n represents 1 or more.
- a plurality of R 1 and R 2 may be the same or different.
- n represents an integer value in a single molecule, and a rational number that is an average value as an aggregate of a plurality of types of molecules.
- the acid-modified bisphenol novolac type epoxy resin examples thereof include EXP-3133 and EXP-3135 (both manufactured by DIC Corporation) and EXP-2827 (manufactured by DIC Corporation), which are bisphenol F novolac type acid-modified epoxy resins.
- the photosensitive resin composition of the present invention contains a photopolymerizable monomer having an ethylenically unsaturated group. Especially, it is preferable to contain the photopolymerizable monomer which has a tricyclodecane structure and a urethane bond in the point which is excellent in HAST resistance. In that case, it is preferable to contain a photopolymerizable monomer having a partial structure represented by the following general formula (2) or general formula (3).
- the tricyclodecane structure includes, for example, a structure represented by the following general formula (4).
- R 3 , R 4 , R 5 and R 6 represent a direct bond, an alkylene group or an arylene group.
- the alkylene group is preferably an alkylene group having 2 to 20 carbon atoms, more preferably an alkylene group having 2 to 10 carbon atoms, and further preferably an alkylene group having 2 to 6 carbon atoms.
- alkylene group having 2 to 6 carbon atoms examples include an ethylene group, a propylene group, an isopropylene group, a butylene group, a pentylene group, and a hexylene group. From the viewpoints of resolution and plating resistance, an ethylene group or isopropylene group is used. It is preferably a group, more preferably an ethylene group.
- the arylene group is preferably an arylene group having 6 to 14 carbon atoms, and more preferably an arylene group having 6 to 10 carbon atoms. Examples of such an arylene group include phenylene and naphthylene.
- the photopolymerizable monomer having a tricyclodecane structure and a urethane bond has (b1) a diol compound having a tricyclodecane structure, (b2) a diisocyanate compound, (b3) an ethylenically unsaturated group and a hydroxyl group. It is preferable that it is a urethane compound obtained by making a compound react.
- Examples of the (b1) diol compound having a tricyclodecane structure include tricyclodecane dimethanol.
- the (b2) diisocyanate compound is not particularly limited, but a compound having a ring structure is preferable. Among these, those having a rigid structure such as isophorone diisocyanate are more preferable from the viewpoint of crack resistance (heat resistance).
- the compound (b3) having an ethylenically unsaturated group and a hydroxyl group preferably has two ethylenically unsaturated groups from the viewpoint of crosslinking density, and more preferably has three. preferable.
- Examples of the compound having three ethylenically unsaturated groups in the molecule include compounds represented by the following general formula (5).
- R 7 and R 8 there are two or more may be different from each other in the same, R 7 represents an alkylene group or an arylene group having 6 to 14 1 to 10 carbon atoms, R 8 Represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or an aryl group having 6 to 14 carbon atoms, and l, m, and n represent 1 to 10. ]
- l, m, and n represent the number of structural units. Therefore, an integer value is shown in a single molecule, and a rational number that is an average value is shown as an aggregate of a plurality of types of molecules.
- the above (b2) diisocyanate is isophorone diisocyanate
- the compound having the ethylenically unsaturated group and the hydroxyl group is represented by the general formula (5 It is more preferable that it is a compound represented by As such compounds, UX-5002D-M20, UX-5002D-P20 (manufactured by Nippon Kayaku Co., Ltd.) and the like are commercially available.
- the content of the component (b) is preferably 10 parts by mass to 60 parts by mass and 15 parts by mass to 50 parts by mass with respect to 100 parts by mass in total of the components (a) and (b). It is more preferable.
- the component (b) is less than 10 parts by mass, the effect of improving HAST resistance is reduced, and when it exceeds 60 parts by mass, a development residue tends to be generated.
- the content of component (b) is 10 to 60 parts by mass with respect to 100 parts by mass of the total amount of the acid-modified epoxy resin. It is also preferable.
- the photosensitive resin composition can further contain other photopolymerizable monomers without particular limitation, but preferably contains a photopolymerizable monomer having three or more ethylenically unsaturated groups.
- Examples of the photopolymerizable monomer having three or more ethylenically unsaturated groups include trimethylolpropane tri (meth) acrylate, tetramethylolmethane tri (meth) acrylate, tetramethylolmethanetetra (meth) acrylate, and dipentaerythritol pentane.
- (meth) acrylate compounds having a skeleton derived from pentaerythritol (meth) acrylate compounds having a skeleton derived from dipentaerythritol, and skeletons derived from trimethylolpropane in terms of further improving crack resistance during reflow mounting
- the (meth) acrylate having a skeleton derived from dipentaerythritol means an esterified product of dipentaerythritol and (meth) acrylic acid, and the esterified product includes a compound modified with an alkyleneoxy group. Is included.
- the above esterified product preferably has 6 ester bonds in one molecule, but a compound having 1 to 5 ester bonds may be mixed.
- the (meth) acrylate compounds having a skeleton derived from dipentaerythritol are commercially available as KAYARAD DPHA, KAYARAD D-310, KAYARAD D-330, KAYARAD DPCA-20, 30, and KAYARAD DPCA-60, 120 (all Available from Nippon Kayaku Co., Ltd.
- the photosensitive resin composition preferably contains a photopolymerizable monomer having two ethylenically unsaturated groups.
- Examples of the photopolymerizable monomer having two ethylenically unsaturated groups include bisphenol A (meth) acrylate compounds, dimethylol tricyclodecane di (meth) acrylate, tricyclodecanediol di (meth) acrylate, and glycidyl groups. Examples thereof include compounds obtained by reacting the containing compound with an ⁇ , ⁇ -unsaturated carboxylic acid, and urethane di (meth) acrylate compounds. These can be used alone or in combination of two or more.
- Tricyclodecanediol dimethacrylate is commercially available as NK ester DCP (Shin Nakamura Chemical Co., Ltd.), and tricyclodecane dimethanol diacrylate is commercially available as NK ester A-DCP (Shin Nakamura Chemical Co., Ltd.). Is possible.
- a bisphenol A (meth) acrylate compound from the viewpoint of excellent resolution.
- 2,2-bis (4- (methacryloxypentaethoxy) phenyl) propane is FA-321M (manufactured by Hitachi Chemical Co., Ltd.) or BPE-500 (Shin Nakamura Chemical Co., Ltd.).
- 2,2-bis (4- (methacryloxypentadecaethoxy) phenyl) is commercially available as BPE-1300 (manufactured by Shin-Nakamura Chemical Co., Ltd.), for example. .
- the photosensitive resin composition of the present invention contains a photopolymerization initiator.
- the photopolymerizable initiator is not particularly limited as long as it matches the light wavelength of the exposure machine to be used, and known ones can be used.
- aromatic ketone, oxime ester compound, thioxanthone compound or acylphosphine oxide compound is preferably used in terms of resolution and rectangular pattern shape, and aromatic ketone or thioxanthone compound is more preferably used. It is preferable to use an aromatic ketone and a thioxanthone compound in combination.
- 2-methyl-1- [4- (methylthio) phenyl] -2-morpholino-propanone-1 is most preferable.
- 2-Methyl-1- [4- (methylthio) phenyl] -2-morpholino-propanone-1 is commercially available as IRGACURE 907 (BASF Corporation).
- Examples of the compound having the oxime ester include (2- (acetyloxyiminomethyl) thioxanthen-9-one), (1,2-octanedione, 1- [4- (phenylthio)-, 2- (o -Benzoyloxime)], ethanone, 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl]-, 1- (o-acetyloxime)), Ethanone, 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl]-, 1- (o-acetyloxime)) is most preferred. This is commercially available as IRGACURE-OXE02 (manufactured by BASF Corporation).
- 2,4-diethylthioxanthone is most preferable. This is commercially available as KAYACURE-DETX-S (Nippon Kayaku Co., Ltd.).
- the acylphosphine oxide compound is most preferably 2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide. This is commercially available as LUCIRIN-TPO (BASF Corporation).
- phosphine oxide photopolymerization initiator examples include monoacylphosphine oxides such as 2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide, bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide, bis (2, And bisacylphosphine oxides such as 6-dimethoxybenzoyl) -2,4,4-trimethyl-pentylphosphine oxide.
- 2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide is, for example, DAROCURE-TPO (manufactured by Ciba Japan), and bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide is, for example, IRGACURE-819 (Ciba. Each of which is commercially available.
- a compound having an acridine ring and a compound having an oxime ester for the purpose of improving sensitivity can be used in combination.
- Examples of the compound having an acridine ring include 9-phenylacridine, 9-aminoacridine, 9-pentylaminoacridine, 1,2-bis (9-acridinyl) ethane, and 1,3-bis (9-acridinyl) propane.
- the content of the component (c) is preferably 0.1 to 10 parts by mass, and 0.5 to 7 parts by mass with respect to 100 parts by mass in total of the components (a) and (b). More preferably, it is a part.
- the content of the aromatic ketone is preferably 0.1 parts by mass to 5 parts by mass, and 0.5 parts by mass to 5 parts by mass with respect to 100 parts by mass in total of the components (a) and (b). More preferably, it is 1.0 part by weight to 5 parts by weight.
- the content of the thioxanthone compound is preferably 0.01 parts by mass to 1 part by mass with respect to 100 parts by mass in total of the components (a) and (b), and 0.05 parts by mass to 0.5 parts by mass.
- the amount is more preferably part by mass, and further preferably 0.1 part by mass to 0.3 part by mass.
- the photosensitive resin composition of the present invention contains an epoxy resin (excluding the above-mentioned acid-modified epoxy resin).
- the component (d) include bisphenol A type epoxy resins such as bisphenol A diglycidyl ether, bisphenol F type epoxy resins such as bisphenol F diglycidyl ether, bisphenol S type epoxy resins such as bisphenol S diglycidyl ether, and biphenol di.
- Biphenol type epoxy resins such as glycidyl ether, bixylenol type epoxy resins such as bixylenol diglycidyl ether, hydrogenated bisphenol A type epoxy resins such as hydrogenated bisphenol A glycidyl ether, phenol biphenyl aralkyl type epoxy resins and bisphenol novolac type epoxy resins Is mentioned. These may be used alone or in combination of two or more.
- examples of bisphenol A diglycidyl ether include Epicoat 828, Epicoat 1001, Epicoat 1002 (all manufactured by Japan Epoxy Resin Co., Ltd.), and the like.
- examples of bisphenol F diglycidyl ether include Epicoat 807 (manufactured by Japan Epoxy Resin Co., Ltd.) and YSLV-80 (manufactured by Nippon Steel Chemical Co., Ltd.).
- Examples of bisphenol S diglycidyl ether include EBPS-200 (manufactured by Nippon Kayaku Co., Ltd.). ) And Epicron EXA-1514 (manufactured by Dainippon Ink & Chemicals, Inc.).
- Examples of the biphenol diglycidyl ether include YL6121 (manufactured by Japan Epoxy Resin), and examples of the bixylenol diglycidyl ether include YX4000H (manufactured by Japan Epoxy Resin). Further, examples of the hydrogenated bisphenol A glycidyl ether include ST-2004 and ST-2007 (both manufactured by Tohto Kasei Co., Ltd.). Examples of the phenol biphenyl aralkyl type epoxy resin include NC-3000H (manufactured by Nippon Kayaku Co., Ltd.). These may be used alone or in combination of two or more.
- a bisphenol F type epoxy resin a phenol biphenyl aralkyl type epoxy resin, or a bisphenol novolac type epoxy resin.
- Examples of the bisphenol F type epoxy resin include YSLV-80 (manufactured by Nippon Steel Chemical Co., Ltd.).
- Examples of the phenol biphenyl aralkyl type epoxy resin include NC-3000H (manufactured by Nippon Kayaku Co., Ltd.).
- EXA-7372 bisphenol F type novolac type epoxy resin, manufactured by DIC Corporation
- 157S70 bisphenol A type novolak type polyfunctional epoxy resin, manufactured by Mitsubishi Chemical Corporation
- the content of the component (d) is preferably 5 to 50 parts by mass, preferably 10 to 40 parts by mass with respect to 100 parts by mass in total of the components (a) and (b). Is more preferably 15 parts by weight to 40 parts by weight, and particularly preferably 20 parts by weight to 35 parts by weight.
- the photosensitive resin composition of the present invention contains an inorganic filler.
- the component (e) for example, barium sulfate, barium titanate, powdered silicon oxide, amorphous silica, talc, clay, calcined kaolin, magnesium carbonate, calcium carbonate, aluminum oxide, aluminum hydroxide, mica powder can be used. .
- a silica filler from the viewpoint of low CTE.
- a silica filler dispersed with a maximum particle size of 1 ⁇ m or less is used in the photosensitive resin composition. It is preferable.
- the inorganic filler is preferably dispersed in the photosensitive resin composition with a maximum particle size of 1 ⁇ m or less, and the average particle size of the inorganic filler is preferably 3 to 300 nm, and preferably 5 to 300 nm. More preferably.
- the silica filler may be any of fused spherical silica, fused and ground silica, crystalline silica, fumed silica, sol-gel silica, and the like. From the viewpoint of particle size, fused spherical silica, fumed silica, sol-gel silica and the like are preferable, and among them fumed silica and sol-gel silica are more preferable.
- Silica is used by being dispersed in the resin without agglomeration while maintaining the primary particle size. In that case, you may perform a silane coupling process to the silica surface.
- silane coupling agent generally available silane coupling agents can be used.
- alkyl silane, alkoxy silane, vinyl silane, epoxy silane, amino silane, acrylic silane, methacryl silane, mercapto silane, sulfide silane, isocyanate silane, sulfur silane, styryl silane, and alkyl chloro silane can be used.
- silane coupling agent examples include methyltrimethoxysilane, dimethyldimethoxysilane, trimethylmethoxysilane, methyltriethoxysilane, methyltriphenoxysilane, ethyltrimethoxysilane, n-propyltrimethoxysilane, diisopropyldimethoxysilane, and isobutyl.
- the component (e) preferably contains barium sulfate together with silica.
- silica By using both silica and barium sulfate, it is easy to have a desired particle size distribution, and the hardness of the photosensitive resin composition can be adjusted.
- the content of the component (e) is preferably 1 to 100 parts by mass, more preferably 5 to 80 parts by mass with respect to 100 parts by mass in total of the components (a) and (b). More preferably, it is 10 to 50 parts by mass.
- the content of the silica filler is preferably 10 to 500 parts by mass, more preferably 20 to 400 parts by mass with respect to 100 parts by mass in total of the components (a) and (b). More preferably, it is ⁇ 300 parts by mass, and particularly preferably more than 60 parts by mass.
- the photosensitive resin composition of the present invention preferably further contains a polymerization inhibitor in addition to the components (a) to (e) described above.
- a polymerization inhibitor examples include hydroquinone, hydroquinone monomethyl ether, tert-butylcatechol, pyrogallol, and phenothiazine. More preferably, the polymerization inhibitor is a phenolic antioxidant.
- the above-mentioned polymerization inhibitor preferably has a melting point of 100 ° C. or higher, more preferably 125 ° C. or higher, in order to suppress volatilization during heating after the development step.
- the weight average molecular weight is preferably 300 or more, and more preferably 370 or more.
- the photosensitive resin composition has an amino acid in the molecule as a curing accelerator from the viewpoint of achieving a higher level of chemical resistance and plating resistance. It is preferable to further contain a compound having a group.
- the present curing accelerator can achieve a higher level of chemical resistance and plating resistance in the case of a thin film.
- Examples of the curing accelerator having an amino group in the molecule include dicyandiamide, melamine, guanamine and derivatives thereof. Specifically, dicyandiamide, melamine, acetoguanamine, benzoguanamine, melamine-phenol-formalin, Shikoku Chemical Industries, Ltd. Commercially available products manufactured by the company; 2MZ-AZINE, 2E4MZ-AZINE, C11Z-AZINE, 2MA-OK. Among these, it is preferable to contain a melamine compound.
- additives such as triazine compounds and derivatives thereof, imidazole series, thiazole series, triazole series, and silane coupling agents can be used.
- triazine derivatives such as ethyldiamino-S-triazine, 2,4-diamino-S-triazine, and 2,4-diamino-6-xylyl-S-triazine.
- the amount is preferably 0.1 parts by mass to 5 parts by mass with respect to 100 parts by mass in total of the components (a) and (b).
- the amount is more preferably 5 to 5 parts by mass, and further preferably 1.0 to 5 parts by mass.
- the photosensitive resin composition can use pigment components of each color as required.
- a colorant or dye such as phthalocyanine blue, phthalocyanine green, iodine green, disazo yellow, malachite green, crystal violet, titanium oxide, carbon black, naphthalene black, azo organic pigment, or the like can be used. .
- thixotropic agents such as benton, montmorillonite, aerosil, and amide wax
- antifoaming agents such as silicone, fluorine, and polymer
- leveling agents can affect the desired properties of the photosensitive resin composition. You may include in the range which is not.
- the photosensitive resin composition of the present invention includes a form obtained by mixing the above-described components in a solvent.
- a solvent As the solvent, alcohol, glycol ether, ethylene glycol alkyl ether acetate, ester, or diethylene glycol can be used from the viewpoint of solubility of each component, ease of film formation, and the like.
- ethylene glycol monobutyl ether acetate diethylene glycol monoethyl ether acetate, diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether, diethylene glycol dimethyl ether, propylene glycol monomethyl ether, and propylene glycol monomethyl ether acetate.
- the photosensitive resin composition used for this invention contains a solvent, it is preferable that the content is 5-40 mass% with respect to the photosensitive resin composition whole quantity.
- the photosensitive film which concerns on this embodiment is a photosensitive film provided with a support body and the photosensitive layer which consists of the said photosensitive resin composition provided on the support body.
- the photosensitive layer is also referred to as a photosensitive resin composition layer.
- a polymer film having heat resistance and solvent resistance such as polyester such as polyethylene terephthalate, polypropylene, and polyethylene
- the thickness of the support (polymer film) is preferably 5 to 25 ⁇ m. If the thickness is less than 5 ⁇ m, the support film tends to be broken when the support film is peeled off before development, and if it exceeds 25 ⁇ m, the resolution tends to decrease.
- a polymer film having heat resistance and solvent resistance such as polyester such as polyethylene terephthalate, polypropylene, and polyethylene
- polyester such as polyethylene terephthalate, polypropylene, and polyethylene
- examples of commercially available products include polypropylene films such as product names “Alphan MA-410” and “E-200C” manufactured by Oji Paper Co., Ltd., Shin-Etsu Film Co., Ltd., and product names “PS-” manufactured by Teijin Limited.
- Polyethylene terephthalate film such as PS series such as “25” can be mentioned, but is not limited thereto.
- the thickness of the protective film is preferably 1 to 100 ⁇ m, more preferably 5 to 50 ⁇ m, still more preferably 5 to 30 ⁇ m, and particularly preferably 15 to 30 ⁇ m. If this thickness is less than 1 ⁇ m, the protective film tends to be broken during lamination, and if it exceeds 100 ⁇ m, the cost tends to be inferior.
- the protective film preferably has a smaller adhesive force between the photosensitive layer and the protective film than the adhesive force between the photosensitive layer and the support, and is preferably a low fisheye film. Fisheye is a material in which foreign materials, undissolved materials, oxidatively deteriorated materials, etc. are incorporated into the film when the material is melted and kneaded, extruded, biaxially stretched, or casted to produce a film. It is.
- the photosensitive layer is prepared by dissolving the photosensitive resin composition in the solvent (solvent) described above to obtain a solution (coating liquid) having a solid content of about 30 to 70% by mass, and then applying the solution (coating liquid) on the support. It is preferable to form it by applying to and drying.
- the application can be performed by a known method using, for example, a roll coater, comma coater, gravure coater, air knife coater, die coater, bar coater or the like.
- the drying can be performed at 70 to 150 ° C. for about 5 to 30 minutes.
- the amount of the remaining organic solvent in the photosensitive resin composition is preferably 3% by mass or less with respect to the total amount of the photosensitive resin composition from the viewpoint of preventing diffusion of the organic solvent in the subsequent step.
- the thickness of the photosensitive layer varies depending on the use, but is preferably 5 to 200 ⁇ m, more preferably 15 to 60 ⁇ m, and particularly preferably 20 to 50 ⁇ m after drying. If the thickness is less than 5 ⁇ m, it tends to be difficult to apply industrially, and if it exceeds 200 ⁇ m, the sensitivity and resolution inside the photosensitive layer tend to be lowered.
- the photosensitive film may further have intermediate layers such as a cushion layer, an adhesive layer, a light absorption layer, and a gas barrier layer.
- the obtained photosensitive film can be wound up and stored in a sheet form or a roll around a core.
- the edge fusion refers to a phenomenon in which the photosensitive resin composition exudes from the end face of the roll when the roll is wound and stored.
- the winding core include plastics such as polyethylene resin, polypropylene resin, polystyrene resin, polyvinyl chloride resin, ABS resin (acrylonitrile-butadiene-styrene copolymer).
- a photosensitive layer made of the above-described photosensitive resin composition is formed on a substrate on which a resist is to be formed.
- the photosensitive film is adhered by a laminate or the like so as to cover a conductor layer having a circuit pattern formed on a substrate.
- the protective film is peeled off from the photosensitive film, and the exposed surface is adhered so as to cover the conductor layer having the circuit pattern formed on the substrate.
- the photosensitive resin composition can also be apply
- an actinic ray is irradiated to a predetermined portion of the photosensitive layer through the mask pattern, the photosensitive layer of the irradiated portion is photocured, and an exposure process for forming a photocured portion is performed.
- a resist pattern can be formed.
- a developer that is safe and stable and has good operability such as an alkaline aqueous solution, an aqueous developer, and an organic solvent is used corresponding to the type of the photosensitive resin composition.
- an alkaline aqueous solution is preferable.
- a base that is safe and stable and has good operability is used.
- lithium hydroxide, sodium hydroxide, potassium hydroxide, etc. which are alkali metal hydroxides such as lithium, sodium, potassium, etc.
- alkali carbonate, ammonium carbonate which are carbonates or bicarbonates, such as alkali metals or ammonium, etc.
- alkali bicarbonate such as sodium phosphate and potassium phosphate which are alkali metal phosphates, sodium pyrophosphate and potassium pyrophosphate which are alkali metal pyrophosphates, and the like.
- Examples of the alkaline aqueous solution include a dilute solution of 0.1 to 5 mass% sodium carbonate, a dilute solution of 0.1 to 5 mass% potassium carbonate, a dilute solution of 0.1 to 5 mass% sodium hydroxide, 0.1 A dilute solution of ⁇ 5 mass% sodium tetraborate is preferred, and its pH is preferably in the range of 9-11.
- the temperature of such an alkaline aqueous solution is adjusted according to the developability of the photosensitive layer and is preferably 20 to 50 ° C.
- a small amount of an organic solvent such as a surfactant or an antifoaming agent may be mixed in the alkaline aqueous solution in order to promote development.
- aqueous developer one comprising water and an alkaline aqueous solution or one or more organic solvents is used.
- the base of the alkaline aqueous solution include those other than those described above, for example, borax, sodium metasilicate, tetramethylammonium hydroxide, ethanolamine, ethylenediamine, diethylenetriamine, 2-amino-2-hydroxymethyl-1,3- Examples include propanediol, 1,3-diaminopropanol-2, and morpholine.
- the pH of such an aqueous developer is preferably as low as possible within a range where development processing can be sufficiently performed, preferably pH 8 to 12, and more preferably pH 9 to 10.
- organic solvent examples include acetone, ethyl acetate, alkoxyethanol having an alkoxy group having 1 to 4 carbon atoms, ethyl alcohol, isopropyl alcohol, butyl alcohol, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, 1, 1,1-trichloroethane, N-methylpyrrolidone, N, N-dimethylformamide, cyclohexanone, methyl isobutyl ketone, and ⁇ -butyrolactone are used.
- the concentration of such an organic solvent is usually preferably 2 to 90% by mass.
- the temperature of such an organic solvent can be adjusted according to developability.
- organic solvents can be used alone or in combination of two or more.
- organic solvent-based developer used alone include 1,1,1-trichloroethane, N-methylpyrrolidone, N, N-dimethylformamide, cyclohexanone, methyl isobutyl ketone, and ⁇ -butyrolactone.
- Developed resist patterns include dip method, paddle method, spray method, high pressure spray method, brushing, slapping and the like, and the high pressure spray method is most suitable for improving the resolution.
- two or more kinds of development methods described above may be used in combination as necessary.
- a cupric chloride solution, a ferric chloride solution, an alkaline etching solution, or the like can be used.
- the irradiation amount can be adjusted as necessary.
- irradiation can be performed at an irradiation amount of about 0.05 to 10 J / cm 2 .
- the resist pattern is heated, it is preferably performed in the range of about 130 to 200 ° C. for about 15 to 90 minutes.
- Both ultraviolet irradiation and heating may be performed. In this case, both may be performed at the same time, and after either one is performed, the other may be performed. When ultraviolet irradiation and heating are performed simultaneously, it is preferable to heat to 60 to 150 ° C. from the viewpoint of imparting better solder heat resistance and chemical resistance.
- the permanent resist formed in this way also serves as a protective film for the wiring after soldering the substrate, and has various characteristics of a solder resist, for printed wiring boards, semiconductor package substrates, and flexible wiring boards. It can be used as a solder resist.
- solder resist is used, for example, as a plating resist or an etching resist when plating or etching a substrate, and is left on the substrate as it is to protect a wiring or the like (permanent resist). Used as
- the unexposed portion is removed by developing this, and the substrate A resist having an opening pattern in which a part of the conductor layer formed thereon is exposed is obtained. After that, it is preferable to perform a process necessary for forming the permanent resist.
- FIG. 1 is a schematic cross-sectional view showing an embodiment of a semiconductor package.
- the semiconductor package 10 includes a semiconductor chip mounting substrate 50 and a semiconductor chip 120 mounted on the semiconductor chip mounting substrate 50.
- the semiconductor chip mounting substrate 50 and the semiconductor chip 120 are bonded with an adhesive 117 made of a die bond film or a die bond paste.
- the semiconductor chip mounting substrate 50 includes an insulating substrate 100.
- a wire bonding wiring terminal 110 and a permanent resist layer in which an opening from which a part of the wiring terminal 110 is exposed is formed.
- 90 is provided, and a permanent resist layer 90 and solder connection terminals 111 are provided on the opposite surface.
- the permanent resist layer 90 is a layer made of a cured product of the photosensitive resin composition of the present embodiment.
- Solder connection terminals 111 have solder balls 114 mounted thereon for electrical connection with the printed wiring board.
- the semiconductor chip 120 and the wire bonding wiring terminal 110 are electrically connected using a gold wire 115.
- the semiconductor chip 120 is sealed with a semiconductor sealing resin 116.
- the photosensitive resin composition of the present embodiment can also be applied to flip chip type semiconductor packages.
- FIG. 2 is a schematic cross-sectional view showing a flip chip type semiconductor package substrate.
- the flip chip type semiconductor package substrate 20 includes a semiconductor chip mounting substrate 50 and a semiconductor chip 120 mounted on the semiconductor chip mounting substrate 50.
- the semiconductor chip mounting substrate 50 and the semiconductor chip 120 are filled with an underfill agent 118.
- the semiconductor chip mounting substrate 50 has a configuration in which an insulating substrate 100b, an insulating substrate 100a, and a permanent resist layer 90 are stacked in this order.
- the permanent resist layer 90 is a layer made of a cured product of the photosensitive resin composition of the present embodiment.
- the insulating substrate 100b has a patterned copper wiring 80 on the surface on the insulating substrate 100a side, and the insulating substrate 100a has a patterned copper wiring 80 on the surface on the permanent resist layer 90 side.
- the copper wiring 80 on the insulating substrate 100b and at least a part of the copper wiring 80 on the insulating substrate 100a are electrically connected by the solder connection terminal 111 formed so as to penetrate the insulating substrate 100a and the insulating substrate 100b. It is connected.
- the permanent resist layer 90 is formed so as to cover the copper wiring 80 on the insulating substrate 100a, but the copper wiring 80 is exposed on the copper wiring 80 corresponding to the connection terminal 111 for solder connection.
- An opening 112 is formed.
- the copper wiring 80 on the insulating substrate 100 a is electrically connected via the copper wiring 80 formed on the surface of the semiconductor chip 120 facing the semiconductor chip mounting substrate 50 and the solder ball 114 provided in the opening 112. It is connected.
- the substrate with the permanent resist is then mounted on an electronic device such as a personal computer.
- the present invention can also be said to be an invention relating to application of the photosensitive resin composition, for example. That is, one aspect of the present invention is as follows: (a) component: acid-modified epoxy resin, (b) component: photopolymerizable monomer having an ethylenically unsaturated group, (c) component: photopolymerization initiator, (d) component : Epoxy resin and component (e): photosensitive resin composition containing an inorganic filler, wherein the component (a) contains an acid-modified bisphenol novolac type epoxy resin, and the following (I) and (II) The photosensitive resin composition satisfying at least one of the following conditions is applied for production of a photosensitive film.
- the component (b) contains a photopolymerizable monomer having a tricyclodecane structure and a urethane bond.
- the component (e) contains a silica filler having a maximum particle size of 1 ⁇ m or less in excess of 60 parts relative to a total of 100 parts by mass of the component (a) and the component (b).
- the other aspect of the present invention is as follows: (a) component: acid-modified epoxy resin, (b) component: photopolymerizable monomer having an ethylenically unsaturated group, (c) component: photopolymerization initiator, (d) Component: epoxy resin, and (e) component: a photosensitive resin composition containing an inorganic filler, wherein the component (a) contains an acid-modified bisphenol novolac type epoxy resin, and (I) and (I) Application of a photosensitive resin composition that satisfies at least one of the conditions shown in II) as a photosensitive resin composition for producing a permanent resist.
- the other aspect of the present invention is as follows: (a) component: acid-modified epoxy resin, (b) component: photopolymerizable monomer having an ethylenically unsaturated group, (c) component: photopolymerization initiator, (d) Component: epoxy resin, and (e) component: a photosensitive resin composition containing an inorganic filler, wherein the component (a) contains an acid-modified bisphenol novolac type epoxy resin, and (I) and (I) Application of a cured product of a photosensitive resin composition that satisfies at least one of the conditions shown in II) to a permanent resist.
- EXP-3133 Bisphenol F novolac type acid-modified epoxy resin (weight average molecular weight 7000, acid value 63 mgKOH / g, manufactured by DIC Corporation)
- EXP-3135 Bisphenol F novolac type acid-modified epoxy resin (weight average molecular weight 8000, acid value 75 mgKOH / g, manufactured by DIC Corporation)
- EXP-2810 Cresol novolak type acid-modified epoxy acrylate (weight average molecular weight 7000, acid value 65 mgKOH / g, manufactured by DIC Corporation)
- ZFR-1158 Bisphenol F-type acid-modified epoxy acrylate (weight average molecular weight 10,000, acid value 65 mgKOH / g, manufactured by Nippon Kayaku Co., Ltd.)
- UXE-3024 Urethane-modified bisphenol A acid-modified epoxy acrylate (weight average molecular weight 10,000, acid value 67 mgKOH / g, manufactured by Nippon Kayaku Co., Ltd.
- the acid value was measured as follows. First, the binder polymer was heated at 130 ° C. for 1 hour to remove volatile matter, thereby obtaining a solid content. Then, after precisely weighing 1 g of the polymer whose acid value is to be measured, 30 g of acetone was added to this polymer and dissolved uniformly. Next, an appropriate amount of an indicator, phenolphthalein, was added to the solution, and titration was performed using a 0.1N aqueous KOH solution. And the acid value was computed by following Formula.
- Acid value 10 ⁇ Vf ⁇ 56.1 / (Wp ⁇ I)
- Vf represents the titration amount (mL) of phenolphthalein
- Wp represents the weight (g) of the measured binder polymer solution
- I represents the ratio (mass%) of the non-volatile content in the measured binder polymer solution.
- the weight average molecular weight (Mw) was measured by gel permeation chromatography (GPC), and was derived by conversion using a standard polystyrene calibration curve.
- GPC gel permeation chromatography
- GPC condition pump Hitachi L-6000 type (manufactured by Hitachi, Ltd., product name) Column: Gelpack GL-R420, Gelpack GL-R430, Gelpack GL-R440 (above, manufactured by Hitachi Chemical Co., Ltd., product name) Eluent: Tetrahydrofuran Measurement temperature: 40 ° C Flow rate: 2.05 mL / min Detector: Hitachi L-3300 type RI (manufactured by Hitachi, Ltd., product name)
- UX-5002D-M20 Tricyclodecane structure-containing urethane acrylate (weight average molecular weight 3500, manufactured by Nippon Kayaku Co., Ltd.)
- UX-5002D-P20 Tricyclodecane structure-containing urethane acrylate (weight average molecular weight 3500, manufactured by Nippon Kayaku Co., Ltd.)
- NK-DCP Tricyclodecane dimethanol dimethacrylate (weight average molecular weight 332, manufactured by Shin-Nakamura Chemical Co., Ltd.)
- DPHA Dipentaerythritol hexaacrylate (weight average molecular weight 578, manufactured by Nippon Kayaku Co., Ltd.)
- FA-321M Bisphenol A polyoxyethylene dimethacrylate (weight average molecular weight 836, manufactured by Hitachi Chemical Co., Ltd.)
- EXA-7372 Bisphenol F novolac type epoxy resin (manufactured by DIC Corporation) NC-3000H: phenol biphenyl aralkyl type epoxy resin (manufactured by Nippon Kayaku Co., Ltd.)
- YSLV-80 Bisphenol F type epoxy resin (manufactured by Nippon Steel Chemical Co., Ltd.)
- Silica filler A A silica filler having an average particle diameter of 100 nm and a silane coupling agent treated with methacrylic silane 3-methacryloxypropyltrimethoxysilane was prepared. This was used by being dispersed in the resin of component (a). The dispersion state was measured using a laser diffraction type microtrack particle size distribution analyzer HRA-X100 (manufactured by Nikkiso Co., Ltd.). The average particle size was 50 nm and the maximum particle size was 204 nm.
- Silica filler B Crystal crushed silica having a silica filler average particle size of 800 nm was prepared. This was used by dispersing in resin (a) with three rolls. The dispersion state was measured using a laser diffraction type microtrack particle size distribution analyzer HRA-X100 (manufactured by Nikkiso Co., Ltd.). As a result, the average particle size was 546 nm and the maximum particle size was 3.8 ⁇ m.
- Barium sulfate Barium sulfate having an average particle size of 200 ⁇ m was prepared as a filler. This was prepared and used as a dispersion by the method shown below.
- the photopolymerizable monomer having an ethylenically unsaturated group (different from the above component (b) and / or (b) component), barium sulfate, melamine and methyl ethyl ketone, the amount described in Table 1 or 2 is added to Starmill LMZ ( Ashizawa Finetech Co., Ltd.) was used, and zirconia beads having a diameter of 1.0 mm were used and dispersed at a peripheral speed of 12 m / s for 3 hours to prepare a barium sulfate dispersion.
- Polymerization inhibitor AW-300, manufactured by Kawaguchi Chemical Co., Ltd., weight average molecular weight 380, melting point 205 ° C.
- Dicyandiamide Mitsubishi Chemical Co., Ltd.
- Melamine Nissan Chemical Industries, Ltd. Pigment: HCP-PM-5385, Toyo Ink Co., Ltd. Phthalocyanine Blue: Nippon Pigment Co., Ltd.
- a photosensitive resin composition solution was prepared using the components described above under the conditions described in Tables 1 to 3.
- a photosensitive layer was formed by uniformly coating the prepared photosensitive resin composition solution on a polyethylene terephthalate film (G2-16, manufactured by Teijin Ltd.) having a thickness of 16 ⁇ m as a support layer. It dried for about 10 minutes at 100 degreeC using the type dryer. The film thickness after drying of the photosensitive layer was 25 ⁇ m.
- a polyethylene film (NF-15, manufactured by Tamapoly Co., Ltd.) is bonded as a protective film on the surface of the photosensitive layer opposite to the side in contact with the supporting layer, and the supporting layer / photosensitive layer / protective film is attached.
- a photosensitive film was obtained.
- a phototool having a 2 mm square pattern as a negative is brought into intimate contact with the laminate substrate for evaluation, and the residue after development of the stove 21-step tablet using an EXM-1201 type exposure machine manufactured by Oak Manufacturing Co., Ltd.
- the exposure was performed with an energy amount at which the step number was 8.0.
- the polyethylene terephthalate film on the laminate substrate for evaluation was peeled off, and the minimum development time (unexposed area was developed with a 1% by mass aqueous sodium carbonate solution at 30 ° C. Spray development was carried out in 2.0 times the minimum time) to form a pattern.
- the evaluation laminate substrate on which the solder resist having a 2 mm square opening is formed is plated using a commercially available electroless nickel / gold plating solution so that the nickel plating thickness is 5 ⁇ m and the gold plating thickness is 0.1 ⁇ m.
- the appearance of the solder resist was observed with a stereomicroscope and evaluated according to the following criteria. That is, “3” indicates that the solder resist is not whitened around the opening, “2” indicates that whitening or peeling occurs at 10 ⁇ m or less, and “1” indicates that whitening or peeling greatly occurs. It was. The results are shown in Tables 4-6.
- the tensile load is 2 g
- the span (distance between chucks) is 15 mm
- the heating rate is 10 ° C./min.
- the sample was attached to the apparatus, heated from room temperature (25 ° C.) to 160 ° C., and left for 15 minutes. Thereafter, the temperature was cooled to ⁇ 60 ° C., and the measurement was performed from ⁇ 60 ° C. to 250 ° C. under a temperature increase rate of 10 ° C./min.
- the inflection point seen in the range from 25 ° C. to 200 ° C. is Tg
- the temperature at that time is “3” when the temperature is 120 ° C. or higher, “2” when the temperature is less than 120 ° C.
- CTE used the inclination of the tangent of the curve obtained at the temperature below Tg.
- 70% or less of this reference value is set to “4”, and more than 70% and less than 130% is set to “3”. Less than% was set to “2”, and 150% or more was set to “1”.
- Tables 4-6 The results are shown in Tables 4-6.
- a solder resist made of a cured product of a resist is formed on the comb electrode on this evaluation substrate in the same manner as in the above “evaluation of resolution” (exposure is performed so that the solder resist remains in the comb electrode portion, development, ultraviolet rays Then, it was exposed for 200 hours in a state where a voltage of 6 V was applied in an environment of 130 ° C. and 85% RH. Thereafter, the resistance value was measured and the degree of migration was observed with a 100-fold metal microscope, and evaluated according to the following criteria. That is, a resistance value of 1.0 ⁇ 10 10 ⁇ or more is maintained, and “3” is given when no migration occurs in the solder resist film, and a resistance value of 1.0 ⁇ 10 10 ⁇ or more is maintained. However, it was “2” when a slight migration occurred, and “1” when a resistance value was less than 1.0 ⁇ 10 10 ⁇ and a large migration occurred. The results are shown in Tables 4-6.
- a photosensitive resin composition for an alkali developable solder resist having a low CTE, a high Tg, excellent crack resistance in a high multilayer substrate, and excellent HAST resistance at an ultra fine pitch can be provided.
- SYMBOLS 10 ... Semiconductor package, 20 ... Flip chip type semiconductor package, 50 ... Semiconductor chip mounting substrate, 80 ... Copper wiring, 90 ... Permanent resist layer, 100a, b ... Insulating substrate, 110 ... Wiring terminal for wire bonding, 111 ... Solder Connection terminal for connection, 112... Opening, 114... Solder ball, 115... Gold wire, 116... Semiconductor sealing resin, 117.
Abstract
Description
(I)上記(b)成分が、トリシクロデカン構造とウレタン結合とを有する光重合性モノマーを含有する。
(II)前記(e)成分は、最大粒径が1μm以下であるシリカフィラーを、上記(a)成分と上記(b)成分の合計100質量部に対して60質量部を超えて、含有する。
本発明の感光性樹脂組成物は、(a)成分:酸変性エポキシ樹脂、(b)成分:エチレン性不飽和基を有する光重合性モノマー、(c)成分:光重合開始剤、(d)成分:エポキシ樹脂、及び(e)成分:無機フィラーを含有し、上記(a)成分が、酸変性ビスフェノールノボラック型エポキシ樹脂を含有し、更に下記(I)及び(II)に示す少なくとも一方の条件を満たす感光性樹脂組成物である。
(I)前記(b)成分が、トリシクロデカン構造とウレタン結合とを有する光重合性モノマーを含有する。
(II)前記(e)成分は、最大粒径が1μm以下であるシリカフィラーを、(a)成分と(b)成分の合計100質量部に対して60質量部を超えて、含有する。
[(a)成分:酸変性エポキシ樹脂]
本発明の感光性樹脂組成物は、(a)成分として、酸変性エポキシ樹脂を含有する。上記酸変性エポキシ樹脂は、例えば、エポキシ樹脂(a1)と、エチレン性不飽和基含有モノカルボン酸(a2)とのエステル化物に、多塩基酸無水物(a3)を付加させることで得ることができる。
本発明の感光性樹脂組成物は、エチレン性不飽和基を有する光重合性モノマーを含有する。中でも、耐HAST性に優れる点では、トリシクロデカン構造とウレタン結合とを有する光重合性モノマーを含有することが好ましい。その場合には、下記の一般式(2)又は一般式(3)で示される部分構造を有する光重合性モノマーを含有することが好ましい。なお、トリシクロデカン構造とは、例えば下記一般式(4)で示される構造を含む。
[式(5)中、複数存在するR7とR8はそれぞれ同一でも異なっていてもよく、R7は炭素数1から10のアルキレン基又は炭素数6から14のアリーレン基を示し、R8は水素原子、炭素数1から10のアルキル基又は炭素数6から14のアリール基を示し、l、m及びnは1~10を示す。]
本発明の感光性樹脂組成物は、光重合開始剤を含有する。光重合性開始剤としては、使用する露光機の光波長にあわせたものであれば特に制限はなく、公知のものを利用することができる。具体的には例えば、ベンゾフェノン、N,N’-テトラアルキル-4,4’-ジアミノベンゾフェノン、2-ベンジル-2-ジメチルアミノ-1-(4-モルフォリノフェニル)-ブタノン-1、2-メチル-1-[4-(メチルチオ)フェニル]-2-モルフォリノ-プロパノン-1、4,4’-ビス(ジメチルアミノ)ベンゾフェノン(ミヒラーケトン)、4,4’-ビス(ジエチルアミノ)ベンゾフェノン、4-メトキシ-4’-ジメチルアミノベンゾフェノン等の芳香族ケトン;アルキルアントラキノン、フェナントレンキノン等のキノン類;ベンゾイン、アルキルベンゾイン等のベンゾイン化合物;ベンゾインアルキルエーテル、ベンゾインフェニルエーテル等のベンゾインエーテル化合物;ベンジルジメチルケタール等のベンジル誘導体;2-(o-クロロフェニル)-4,5-ジフェニルイミダゾール二量体、2-(o-クロロフェニル)-4,5-ジ(m-メトキシフェニル)イミダゾール二量体、2-(o-フルオロフェニル)-4,5-ジフェニルイミダゾール二量体、2-(o-メトキシフェニル)-4,5-ジフェニルイミダゾール二量体、2,4-ジ(p-メトキシフェニル)-5-フェニルイミダゾール二量体、2-(2,4-ジメトキシフェニル)-4,5-ジフェニルイミダゾール二量体等の2,4,5-トリアリールイミダゾール二量体;N-フェニルグリシン、N-フェニルグリシン誘導体;9-フェニルアクリジン、1,7-ビス(9,9’-アクリジニル)ヘプタン等のアクリジン誘導体、1,2-オクタンジオン,1-[4-(フェニルチオ)-,2-(o-ベンゾイルオキシム)]、エタノン,1-[9-エチル-6-(2-メチルベンゾイル)-9H-カルバゾール-3-イル]-,1-(0-アセチルオキシム)等のオキシムエステル類;7-ジエチルアミノ-4-メチルクマリン等のクマリン系化合物;2,4-ジエチルチオキサントン等のチオキサントン系化合物;2,4,6-トリメチルベンゾイル-ジフェニル-ホスフィンオキサイド等のアシルホスフィンオキサイド系化合物などが挙げられる。これらは単独で又は二種類以上を組み合わせて用いることができる。
本発明の感光性樹脂組成物は、エポキシ樹脂(但し上述の酸変性エポキシ樹脂を除く。)を含有する。(d)成分としては、例えば、ビスフェノールAジグリシジルエーテル等のビスフェノールA型エポキシ樹脂、ビスフェノールFジグリシジルエーテル等のビスフェノールF型エポキシ樹脂、ビスフェノールSジグリシジルエーテル等のビスフェノールS型エポキシ樹脂、ビフェノールジグリシジルエーテル等のビフェノール型エポキシ樹脂、ビキシレノールジグリシジルエーテル等のビキシレノール型エポキシ樹脂、水添ビスフェノールAグリシジルエーテル等の水添ビスフェノールA型エポキシ樹脂、フェノールビフェニルアラルキル型エポキシ樹脂及びビスフェノールノボラック型エポキシ樹脂が挙げられる。これらは単独で又は2種類以上を組み合わせて使用される。
本発明の感光性樹脂組成物は、無機フィラーを含有する。(e)成分としては、例えば、硫酸バリウム、チタン酸バリウム、粉状酸化珪素、無定形シリカ、タルク、クレー、焼成カオリン、炭酸マグネシウム、炭酸カルシウム、酸化アルミニウム、水酸化アルミニウム、雲母粉が使用できる。上記の中でも、低CTE化の点から、シリカフィラーを含有することが好ましい。
次に、好適な実施形態の感光性フィルムについて説明する。本実施形態に係る感光性フィルムは、支持体と、支持体上に設けられた上記感光性樹脂組成物からなる感光層と、を備える感光性フィルムである。感光層は感光性樹脂組成物層とも呼ぶ。なお、上記感光層上には、該感光層を被覆する保護フィルムを更に備えていてもよい。
次に、本実施形態に係る感光性フィルムを用いたレジストパターンの形成方法について説明する。
上記感光性フィルムを用いた永久レジストの好適な実施形態について説明する。
本実施形態の感光性樹脂組成物は、半導体パッケージ用プリント配線板の永久レジスト膜の形成に好適に用いることができる。すなわち、本発明は、上述の感光性樹脂組成物の硬化物からなる永久レジスト層を有する半導体パッケージを提供する。図1は、半導体パッケージの一実施形態を示す模式断面図である。半導体パッケージ10は、半導体チップ搭載用基板50と、半導体チップ搭載用基板50に搭載された半導体チップ120とを備える。半導体チップ搭載用基板50と半導体チップ120とは、ダイボンドフィルム又はダイボンドペーストからなる接着剤117で接着されている。半導体チップ搭載用基板50は、絶縁基板100を備え、絶縁基板100の一方面上には、ワイヤボンディング用配線端子110と、配線端子110の一部が露出する開口部が形成された永久レジスト層90が設けられ、反対側の面上には、永久レジスト層90とはんだ接続用接続端子111とが設けられている。永久レジスト層90は、上記本実施形態の感光性樹脂組成物の硬化物からなる層である。はんだ接続用接続端子111は、プリント配線板との電気的な接続を行うために、はんだボール114を搭載している。半導体チップ120とワイヤボンディング用配線端子110とは、金ワイヤ115を用いて電気的に接続されている。半導体チップ120は、半導体用封止樹脂116によって封止されている。なお、本実施形態の感光性樹脂組成物は、フリップチップタイプの半導体パッケージにも適用することができる。
(I)前記(b)成分が、トリシクロデカン構造とウレタン結合とを有する光重合性モノマーを含有する。
(II)前記(e)成分は、最大粒径が1μm以下であるシリカフィラーを、上記(a)成分と(b)成分の合計100質量部に対して60部を超えて、含有する。
表1~3に示した各成分を、そこに示す配合比(質量基準)で混合することにより実施例1~16、比較例1~15の感光性樹脂組成物を得た。なお、溶媒には、メチルエチルケトンを使用した。
EXP-3133:ビスフェノールFノボラック型酸変性エポキシ樹脂(重量平均分子量7000、酸価63mgKOH/g、DIC株式会社製)
EXP-3135:ビスフェノールFノボラック型酸変性エポキシ樹脂(重量平均分子量8000、酸価75mgKOH/g、DIC株式会社製)
EXP-2810:クレゾールノボラック型酸変性エポキシアクリレート(重量平均分子量7000、酸価65mgKOH/g、DIC株式会社製)
ZFR-1158:ビスフェノールF型酸変性エポキシアクリレート(重量平均分子量10000、酸価65mgKOH/g、日本化薬株式会社製)
UXE-3024:ウレタン変性ビスフェノールA型酸変性エポキシアクリレート(重量平均分子量10000、酸価67mgKOH/g、日本化薬株式会社製)
酸価は、次のようにして測定した。まず、バインダーポリマーを、130℃で1時間加熱し、揮発分を除去して、固形分を得た。そして、酸価を測定すべきポリマー1gを精秤した後、このポリマーにアセトンを30g添加し、これを均一に溶解した。次いで、指示薬であるフェノールフタレインをその溶液に適量添加して、0.1NのKOH水溶液を用いて滴定を行った。そして、次式により酸価を算出した。
酸価=10×Vf×56.1/(Wp×I)
式中、Vfはフェノールフタレインの滴定量(mL)を示し、Wpは測定したバインダーポリマー溶液の重量(g)を示し、Iは測定したバインダーポリマー溶液中の不揮発分の割合(質量%)を示す。
なお、重量平均分子量(Mw)は、ゲルパーミエーションクロマトグラフィー法(GPC)によって測定し、標準ポリスチレンの検量線を用いて換算することにより導出した。GPCの条件を以下に示す。
GPC条件
ポンプ:日立 L-6000型(株式会社日立製作所製、製品名)
カラム:Gelpack GL-R420、Gelpack GL-R430、Gelpack GL-R440(以上、日立化成工業株式会社製、製品名)
溶離液:テトラヒドロフラン
測定温度:40℃
流量:2.05mL/分
検出器:日立 L-3300型RI(株式会社日立製作所製、製品名)
UX-5002D-M20:トリシクロデカン構造含有ウレタンアクリレート(重量平均分子量3500、日本化薬株式会社製)
UX-5002D-P20:トリシクロデカン構造含有ウレタンアクリレート(重量平均分子量3500、日本化薬株式会社製)
NK-DCP:トリシクロデカンジメタノールジメタクリレート(重量平均分子量332、新中村化学工業株式会社製)
DPHA:ジペンタエリスリトールヘキサアクリレート(重量平均分子量578、日本化薬株式会社製)
FA-321M:ビスフェノールAポリオキシエチレンジメタクリレート(重量平均分子量836、日立化成工業株式会社製)
I-907:2-メチル-1-(4-メチルチオフェニル)-2-モルフォリノプロパン-1-オン(IRGACURE-907、BASF株式会社製)
DETX-S:2,4-ジエチルチオキサントン(KAYACURE-DETX-S、日本化薬株式会社製)
TPO:2,4,6-トリメチルベンゾイル-ジフェニル-ホスフィンオキサイド(LUCIRIN-TPO、BASF株式会社製)
OXE-02:エタノン,1-[9-エチル-6-(2-メチルベンゾイル)-9H-カルバゾール-3-イル]-,1-(O-アセチルオキシム)(IRGACURE-OXE-02、BASF株式会社製)
EXA-7372:ビスフェノールFノボラック型エポキシ樹脂(DIC株式会社製)
NC-3000H:フェノールビフェニルアラルキル型エポキシ樹脂(日本化薬株式会社製)
YSLV-80:ビスフェノールF型エポキシ樹脂(新日鉄化学株式会社製)
シリカフィラーA:シリカフィラーの平均粒径が100nmで、シランカップリング剤として、メタクリルシランである3-メタクリロキシプロピルトリメトキシシランでカップリング処理したものを準備した。これを、(a)成分の樹脂中に分散して用いた。分散状態は、レーザー回折式マイクロトラック粒度分布計HRA-X100(日機装社製)を用いて測定したところ、平均粒径は50nm、最大粒径は204nmであった。また、評価毎に上記と同様に測定した結果、いずれの評価時においても、平均粒径が100nm以下、最大粒径が1μm以下となっていることを確認した。
シリカフィラーB:シリカフィラーの平均粒径が800nmの結晶破砕シリカを準備した。これを3本ロールで樹脂(a)に分散して用いた。分散状態は、レーザー回折式マイクロトラック粒度分布計HRA-X100(日機装社製)を用いて測定したところ、平均粒径は546nm、最大粒径は3.8μmであった。また、評価毎に上記と同様に測定した結果、いずれの評価時においても、平均粒径が800nm以下、最大粒径が5μm以下となっていることを確認した。
硫酸バリウム:フィラーとして平均粒径が200μmの硫酸バリウムを準備した。これを、以下に示す方法で分散液として調製して用いた。エチレン性不飽和基を有する光重合性モノマー(上記(b)成分及び/又は(b)成分とは異なるもの)、硫酸バリウム、メラミン及びメチルエチルケトンについて、表1又は2に記載した量をスターミルLMZ(アシザワファインテック株式会社製)に投入し、直径1.0mmのジルコニアビーズを用い、周速12m/sにて3時間分散して硫酸バリウム分散液を調製した。
・酸化アルミニウム(アルミナ):平均粒径50nmの酸化アルミニウムのメチルイソブチルケトン分散スラリー(ALMMIBK-H06、CIKナノテック株式会社製)
重合禁止剤:AW-300、川口化学工業株式会社製、重量平均分子量380、融点205℃
ジシアンジアミド:三菱化学株式会社製
メラミン:日産化学工業株式会社製
顔料:HCP-PM-5385、東洋インキ株式会社製
フタロシアニンブルー:日本ピグメント株式会社製
[塗膜性の評価]
得られた感光性フィルムに対し、露光を行わずに、感光性フィルムのポリエチレンテレフタレートフィルムを剥離し、その塗膜表面に指を軽く押し付け、指に対する張り付き程度を以下の基準で評価した。すなわち、指に対する張り付きが認められないもの、ほとんど認められないもの、又は指に対する張り付きが僅かに認められるものは「3」とし、指に対する張り付きが認められるものは「2」、樹脂が指に付着するほどの強い張り付きが認められるものは「1」とした。結果を表4~6に示した。
12μm厚の銅箔をガラスエポキシ基材に積層したプリント配線板用基板(E-679、日立化成工業株式会社製)の銅表面を砥粒ブラシで研磨し、水洗後、乾燥した。このプリント配線板用基板上に連続プレス式真空ラミネータ(MVLP-500、株式会社名機製作所製)を用いて、プレス熱板温度70℃、真空引き時間20秒、ラミネートプレス時間30秒、気圧4kPa以下、圧着圧力0.4MPaの条件の下、上記感光性フィルムのポリエチレンフィルムを剥離して積層し、評価用積層体基板を得た。
上記の2mm角の開口部を有するソルダーレジストを形成した評価用積層体基板を市販の無電解ニッケル/金めっき液を用いて、ニッケルめっき厚5μm、金めっき厚0.1μmとなるようにめっきを行い、ソルダーレジストの外観を実体顕微鏡で観察し次の基準で評価した。すなわち、開口部周辺にソルダーレジストの白化が認められないものは「3」とし、10μm以下で白化、剥れが発生したものを「2」、白化、剥れが大きく発生したものを「1」とした。結果を表4~6に示した。
上記感光性フィルムの全面を露光して、現像、紫外線照射、加熱処理まで行うことで、16μm厚のポリエチレンテレフタレートフィルム(G2-16、帝人株式会社製)上に、ソルダーレジストの硬化物を形成し、次いで、カッターナイフで、幅3mm、長さ30mmに切り出した後、該感光性フィルムのポリエチレンテレフタレートを剥離し、熱膨張係数評価用感光性樹脂硬化物を得た。TMA装置SS6000(セイコー・インスツルメンル株式会社製)を用いて、引張りモードでの熱膨張係数の測定を行った。引張り荷重は2g、スパン(チャック間距離)は15mm、昇温速度は10℃/分である。まず、サンプルを装置に装着し、室温(25℃)から160℃まで加熱し、15分間放置した。その後、-60℃まで冷却し、-60℃から250℃まで昇温速度10℃/分の条件で測定を行った。25℃から200℃までの範囲で見られる変曲点をTgとし、その時の温度が、120℃以上のものを「3」、100℃から120℃未満のものを「2」、100℃以下のものを「1」とした。CTEはTg以下の温度で得られる曲線の接線の傾きを用いた。実施例1で得られたCTEの値を基準値として、この基準値に対して70%以下のものを「4」とし、70%超130%未満のものを「3」とし、130%以上150%未満のものを「2」とし、150%以上のものを「1」とした。結果を表4~6に示した。
コア材に12μm厚の銅箔をガラスエポキシ基材に積層したプリント配線板用基板(MCL-E-679FG、日立化成工業株式会社)、セミアディブ配線形成用ビルドアップ材(AS-ZII、日立化成工業株式会社製)を用いて、ライン/スペースが8μm/8μmのくし型電極を作製し、これを評価基板とした。この評価基板におけるくし型電極上に、上記「解像性の評価」と同様にしてレジストの硬化物からなるソルダーレジストを形成し(くし型電極部分にソルダーレジストが残るように露光し現像、紫外線照射、加熱処理を行い形成)、その後、130℃、85%RHの環境下で、6Vの電圧をかけた状態で200時間晒した。その後、抵抗値の測定とマイグレーションの発生の程度を100倍の金属顕微鏡により観察し、次の基準で評価した。すなわち、抵抗値が1.0×1010Ω以上が保持されており、ソルダーレジスト膜にマイグレーションが発生しなかったものは「3」とし、抵抗値が1.0×1010Ω以上が保持されていたが、僅かにマイグレーションが発生したものは「2」、抵抗値が1.0×1010Ω未満となり、マイグレーションが大きく発生したものは「1」とした。結果を表4~6に示した。
上記「評価基板の作製」と同様にソルダーレジストを形成した評価用積層体基板を、-65℃の大気中に15分間晒した後、180℃/分の昇温速度で昇温し、次いで、150℃の大気中に15分間晒した後、180℃/分の降温速度で降温する熱サイクルを1000回繰り返した。このような環境下に晒した後、評価用積層体基板の永久レジスト膜のクラック及び剥離程度を100倍の金属顕微鏡により観察し、次の基準で評価した。すなわち、2mm角の開口部の10箇所を確認して永久レジスト膜のクラック及び剥離を全く観察できなかったものは「3」とし、10箇所中2箇所以下でクラック及び剥離が観察されたものを「2」、10箇所中3箇所以上でクラック及び剥離が観察されたものを「1」とした。結果を表4~6に示した。
Claims (8)
- (a)成分:酸変性エポキシ樹脂、
(b)成分:エチレン性不飽和基を有する光重合性モノマー、
(c)成分:光重合開始剤、
(d)成分:エポキシ樹脂、及び
(e)成分:無機フィラーを含有する感光性樹脂組成物であって、
前記(a)成分が、酸変性ビスフェノールノボラック型エポキシ樹脂を含有し、更に下記(I)及び(II)に示す少なくとも一方の条件を満たす感光性樹脂組成物。
(I)前記(b)成分が、トリシクロデカン構造とウレタン結合とを有する光重合性モノマーを含有する。
(II)前記(e)成分は、最大粒径が1μm以下であるシリカフィラーを、前記(a)成分と前記(b)成分の合計100質量部に対して60質量部を超えて、含有する。 - 前記(b)成分が、トリシクロデカン構造を有するジオール化合物と、ジイソシアネート化合物と、エチレン性不飽和基及びヒドロキシル基を有する化合物と、を反応させて得られるウレタン化合物を含む、請求項1~3のいずれか一項に記載の感光性樹脂組成物。
- 分子内にアミノ基を有する硬化促進剤を更に含有する、請求項1~4のいずれか一項に記載の感光性樹脂組成物。
- 支持体と、該支持体上に設けられた請求項1~5のいずれか一項に記載の感光性樹脂組成物からなる感光層と、を備える感光性フィルム。
- 基板上に、請求項1~5のいずれか一項に記載の感光性樹脂組成物からなる感光層を設ける工程と、
前記感光層に活性光線をパターン照射する工程と、
前記感光層を現像して永久レジストを形成させる工程と、
を備える、永久レジストの製造方法。 - 請求項1~5のいずれか一項に記載の感光性樹脂組成物の硬化物からなる永久レジスト。
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Families Citing this family (9)
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009015309A (ja) * | 2007-05-25 | 2009-01-22 | Sumitomo Bakelite Co Ltd | 樹脂組成物、樹脂スペーサ用フィルムおよび半導体装置 |
WO2010026927A1 (ja) * | 2008-09-04 | 2010-03-11 | 日立化成工業株式会社 | 半導体パッケージ用プリント配線板の保護膜用感光性樹脂組成物 |
JP2010280812A (ja) * | 2009-06-04 | 2010-12-16 | Nippon Kayaku Co Ltd | 反応性ウレタン化合物、それを含む活性エネルギー線硬化型樹脂組成物、及びその用途 |
JP2011048313A (ja) * | 2009-07-29 | 2011-03-10 | Hitachi Chem Co Ltd | 感光性樹脂組成物及び感光性フィルム |
JP2011158628A (ja) * | 2010-01-29 | 2011-08-18 | Tamura Seisakusho Co Ltd | 感光性樹脂組成物およびその硬化膜を用いたプリント配線板 |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3448089A (en) * | 1966-03-14 | 1969-06-03 | Du Pont | Photopolymerizable polymers containing free acid or acid anhydride groups reacted with glycidyl acrylate or glycidyl methacrylate |
JPS5970642A (ja) * | 1982-10-16 | 1984-04-21 | Teikoku Chem Ind Corp Ltd | (メタ)アクリル酸エステル誘導体とその製造方法 |
JPS61243869A (ja) | 1985-04-19 | 1986-10-30 | Taiyo Ink Seizo Kk | レジストインキ組成物 |
GB2230871A (en) * | 1989-04-11 | 1990-10-31 | Coates Brothers Plc | Making metal patterns. |
US5766304A (en) * | 1995-04-25 | 1998-06-16 | Kawasaki Steel Corporation | Iron-base powder mixture for powder metallurgy and manufacturing method therefor |
US6583198B2 (en) * | 1997-11-28 | 2003-06-24 | Hitachi Chemical Company, Ltd. | Photo curable resin composition and photosensitive element |
JP3496668B2 (ja) | 1997-11-28 | 2004-02-16 | 日立化成工業株式会社 | 光硬化性樹脂組成物及びこれを用いた感光性エレメント |
DE69934153T2 (de) * | 1998-02-02 | 2007-09-20 | Shin-Etsu Chemical Co., Ltd. | Verfahren zur Montage von Flip-Chip-Halbleiterbauelementen |
SE9803566D0 (sv) * | 1998-10-16 | 1998-10-16 | Hoeganaes Ab | Iron powder compositions |
JP4147442B2 (ja) * | 1999-09-30 | 2008-09-10 | ソニー株式会社 | 非水電解液型二次電池 |
TWI258634B (en) * | 1999-10-22 | 2006-07-21 | Hitachi Chemical Co Ltd | Photosensitive resin composition, photosensitive element using the same, a process for producing resist pattern and resist pattern laminate |
US6727042B2 (en) * | 2000-01-17 | 2004-04-27 | Showa Highpolymer Co., Ltd. | Photosensitive resin composition |
JP2002014466A (ja) * | 2000-06-28 | 2002-01-18 | Taiyo Ink Mfg Ltd | 感光性樹脂組成物 |
JP3865601B2 (ja) * | 2001-06-12 | 2007-01-10 | 日東電工株式会社 | 電磁波抑制体シート |
JP3723483B2 (ja) * | 2001-10-16 | 2005-12-07 | 日本電気株式会社 | 電子部品装置 |
JP2005037754A (ja) * | 2003-07-17 | 2005-02-10 | Toyo Ink Mfg Co Ltd | 感光性樹脂組成物、それを用いた感光性フィルム、及びその製造方法 |
DE602005007419D1 (de) * | 2004-05-07 | 2008-07-24 | Rohm & Haas | Rohmix-pulverzusammensetzungen und verfahren zu deren herstellung |
TW200613903A (en) * | 2004-05-26 | 2006-05-01 | Showa Denko Kk | Photosensitive resin composition, and cured product and use thereof |
EP1906242B1 (en) * | 2005-06-30 | 2015-07-15 | DIC Corporation | Photosensitive resin composition |
CN101379120B (zh) * | 2006-02-01 | 2012-04-11 | 丸尾钙株式会社 | 多孔树脂膜用微孔形成剂及配合其的多孔树脂膜用组合物 |
KR101019738B1 (ko) * | 2006-02-24 | 2011-03-08 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 수지 조성물, 프리프레그 및 금속-호일-클래드 라미네이트 |
SG171647A1 (en) * | 2006-05-12 | 2011-06-29 | Denki Kagaku Kogyo Kk | Ceramic powder and use thereof |
TWI412506B (zh) * | 2006-05-12 | 2013-10-21 | Denki Kagaku Kogyo Kk | 陶瓷粉末及其用途 |
CN101105626A (zh) * | 2006-07-10 | 2008-01-16 | 太阳油墨制造株式会社 | 光固化性·热固化性树脂组合物、其固化物及印刷电路板 |
JP2008026667A (ja) * | 2006-07-21 | 2008-02-07 | Nippon Kayaku Co Ltd | 永久レジスト組成物、及びレジスト積層体 |
CN101529333A (zh) * | 2006-10-24 | 2009-09-09 | 日立化成工业株式会社 | 感光性树脂组合物及使用该组合物的感光性元件 |
JP5233164B2 (ja) * | 2007-05-21 | 2013-07-10 | 住友ベークライト株式会社 | 樹脂組成物、接着フィルムおよび受光装置 |
CN101679555B (zh) * | 2007-05-23 | 2012-05-23 | 昭和电工株式会社 | 具有醚键的反应性氨基甲酸酯化合物、固化性组合物及固化物 |
JP2009009110A (ja) * | 2007-05-30 | 2009-01-15 | Sumitomo Bakelite Co Ltd | 感光性接着剤樹脂組成物、接着フィルムおよび受光装置 |
JP5050683B2 (ja) * | 2007-06-25 | 2012-10-17 | 日立化成工業株式会社 | 感光性樹脂組成物及びこれを用いた感光性エレメント |
JP5285257B2 (ja) * | 2007-09-21 | 2013-09-11 | 太陽ホールディングス株式会社 | 光硬化性・熱硬化性樹脂組成物及びその硬化物 |
JP5512095B2 (ja) | 2008-04-28 | 2014-06-04 | 富士フイルム株式会社 | 感光性組成物、固体撮像素子用感光性組成物、固体撮像素子用遮光性カラーフィルタ、及び固体撮像素子 |
JPWO2009142237A1 (ja) * | 2008-05-23 | 2011-09-29 | 昭和電工株式会社 | 反応性(メタ)アクリレートポリマーを含有した硬化性組成物およびその硬化物 |
CN102037406A (zh) * | 2008-06-02 | 2011-04-27 | 日立化成工业株式会社 | 感光性树脂组合物、感光性元件、抗蚀剂图形的制造方法以及印刷电路板的制造方法 |
JPWO2009151050A1 (ja) * | 2008-06-10 | 2011-11-17 | 日本化薬株式会社 | 中空パッケージ用感光性樹脂組成物、その硬化物及び該樹脂組成物を用いた積層体並びにマイクロデバイス |
JP5472692B2 (ja) | 2009-07-06 | 2014-04-16 | 日立化成株式会社 | アルカリ現像可能な感光性樹脂組成物及びそれを用いた感光性フィルム |
JP5661293B2 (ja) * | 2010-02-08 | 2015-01-28 | 太陽ホールディングス株式会社 | 光硬化性樹脂組成物、ドライフィルム、硬化物及びプリント配線板 |
-
2012
- 2012-08-09 US US14/237,618 patent/US9235121B2/en active Active
- 2012-08-09 CN CN201910193891.XA patent/CN110083010A/zh active Pending
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009015309A (ja) * | 2007-05-25 | 2009-01-22 | Sumitomo Bakelite Co Ltd | 樹脂組成物、樹脂スペーサ用フィルムおよび半導体装置 |
WO2010026927A1 (ja) * | 2008-09-04 | 2010-03-11 | 日立化成工業株式会社 | 半導体パッケージ用プリント配線板の保護膜用感光性樹脂組成物 |
JP2010280812A (ja) * | 2009-06-04 | 2010-12-16 | Nippon Kayaku Co Ltd | 反応性ウレタン化合物、それを含む活性エネルギー線硬化型樹脂組成物、及びその用途 |
JP2011048313A (ja) * | 2009-07-29 | 2011-03-10 | Hitachi Chem Co Ltd | 感光性樹脂組成物及び感光性フィルム |
JP2011158628A (ja) * | 2010-01-29 | 2011-08-18 | Tamura Seisakusho Co Ltd | 感光性樹脂組成物およびその硬化膜を用いたプリント配線板 |
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CN103748516A (zh) | 2014-04-23 |
TW201314359A (zh) | 2013-04-01 |
KR20140050060A (ko) | 2014-04-28 |
TWI554830B (zh) | 2016-10-21 |
US20140154628A1 (en) | 2014-06-05 |
US9235121B2 (en) | 2016-01-12 |
KR102003575B1 (ko) | 2019-07-24 |
CN110058490A (zh) | 2019-07-26 |
JPWO2013022068A1 (ja) | 2015-03-05 |
CN110083010A (zh) | 2019-08-02 |
JP6064905B2 (ja) | 2017-01-25 |
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