JP2018064085A - ファン−アウト半導体パッケージ及び感光性樹脂組成物 - Google Patents
ファン−アウト半導体パッケージ及び感光性樹脂組成物 Download PDFInfo
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- JP2018064085A JP2018064085A JP2017123743A JP2017123743A JP2018064085A JP 2018064085 A JP2018064085 A JP 2018064085A JP 2017123743 A JP2017123743 A JP 2017123743A JP 2017123743 A JP2017123743 A JP 2017123743A JP 2018064085 A JP2018064085 A JP 2018064085A
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Classifications
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- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/20—Structure, shape, material or disposition of high density interconnect preforms
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
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- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
- H01L24/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
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- H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
- H01L24/09—Structure, shape, material or disposition of the bonding areas after the connecting process of a plurality of bonding areas
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
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- H05K3/285—Permanent coating compositions
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0237—Disposition of the redistribution layers
- H01L2224/02379—Fan-out arrangement
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H01L2224/73203—Bump and layer connectors
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- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
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- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
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Abstract
Description
図1は電子機器システムの例を概略的に示すブロック図である。
一般に、半導体チップには、数多くの微細電気回路が集積されているが、それ自体が半導体完成品としての役割を果たすことはできず、外部からの物理的または化学的衝撃により損傷する可能性がある。したがって、半導体チップ自体をそのまま用いるのではなく、半導体チップをパッケージングして、パッケージ状態で電子機器などに用いている。
図3はファン−イン半導体パッケージのパッケージング前後を概略的に示した断面図である。
図7はファン−アウト半導体パッケージの概略的な形態を示した断面図である。
熱硬化性樹脂は、熱重合及び/または光重合が可能な公知の熱硬化性樹脂であることができる。制限されない一例として、熱硬化性樹脂はエポキシ樹脂であってもよい。エポキシ樹脂としては、芳香族環を有するエポキシ樹脂を好ましく用いることができる。例えば、エポキシ樹脂は、ビスフェノール型エポキシ樹脂及びビフェニル型エポキシ樹脂のうち少なくとも一つを含むことができる。この場合、組成物の粘度を十分に下げることで、銅のような導電性物質との密着性を改善させるとともに、半田耐熱性、PCT耐性、冷熱サイクル(TC)耐性などの耐熱特性を確保することができるため、封止材の様々な欠陥の発生を防止することができる。エポキシ樹脂の具体的な例としては、日本化薬社製のNC−3000H(ビフェニル骨格含有多官能固形エポキシ樹脂)などのビフェニルアラルキル型エポキシ樹脂、NC−3000 Lなどのビフェニル/フェノールノボラック型エポキシ樹脂、三菱化学社製のjER828、jER834、jER1001、jER1004、DIC社製のエピクロ840、エピクロ850、エピクロ1050、エピクロ2055、国道化学社製のYD−011、YD−013、YD−127、YD−128、YD−128K、KDS−8170、KDS−8128などが挙げられるが、これらに限定されるものではなく、単独または2種以上混合して用いることができる。特にビスフェノールA型エポキシ樹脂またはビスフェノールA型エポキシ樹脂を含む混合樹脂を用いることが好ましいが、これに限定されるものではない。
カルボキシル基含有樹脂は、カルボキシル基を有しているため、これを含む組成物及び/またはその硬化物がアルカリ水溶液による現像を可能にする。カルボキシル基含有樹脂は、熱硬化性反応基及びエチレン性不飽和基を有することができる。熱硬化性反応基は、熱硬化性樹脂との重合反応に用いられることができる。エチレン性不飽和基は、エチレン性不飽和化合物との重合反応に用いられることができる。すなわち、カルボキシル基含有樹脂は、熱硬化性樹脂及びエチレン性不飽和化合物の両方とも重合することができる。このような観点から、カルボキシル基含有樹脂は、カルボキシル基含有エポキシアクリレート樹脂であることができる。カルボキシル基含有エポキシアクリレート樹脂は、ビスフェノール型エポキシ樹脂、ビフェニル型エポキシ樹脂などのエポキシ樹脂に、アクリル酸、メタクリル酸、ヒドロキシエチル(メタ)アクリレート、ヒドロキシプロピル(メタ)アクリレート、ヒドロキシブチル(メタ)アクリレート、フェニルグリシジル(メタ)アクリレート、(メタ)アクリル酸カプロラクトン付加物などの水酸基含有アクリレートの不飽和二塩基酸無水物付加物などを反応させて生成されるエステル化生成物を、メチルテトラヒドロ無水フタル酸、テトラヒドロ無水フタル酸、ヘキサヒドロ無水フタル酸、メチルヘキサヒドロ無水フタル酸、無水コハク酸、無水マレイン酸、無水フタル酸、無水イタコン酸などの脂肪族または芳香族二塩基酸無水物などの飽和または不飽和多塩基酸無水物と反応させて得ることができる。例えば、カルボキシル基含有エポキシアクリレート樹脂は、カルボキシル基含有クレゾールノボラック型エポキシアクリレート樹脂及び/またはカルボキシル基含有ビスフェノール型エポキシアクリレート樹脂を含むことができるが、これに限定されるものではない。
エチレン性不飽和化合物は、UV照射によって光硬化が可能であり、これにより、アルカリ水溶液などにより不溶化することができるため、光硬化後の封止材130などにパターン及びビアの形成が可能となる。エチレン性不飽和化合物は、活性エネルギー線照射により光硬化されて、カルボキシル基含有樹脂がアルカリ水溶液などにより不溶化することを助けることができる。制限されない一例として、エチレン性不飽和化合物は、アクリレート化合物であることができる。アクリレート化合物は、例えば、2−ヒドロキシエチルアクリレート、2−ヒドロキシプロピルアクリレートなどのヒドロキシアルキルアクリレート類;エチレングリコール、メトキシテトラエチレングリコール、ポリエチレングリコール、プロピレングリコールなどのグリコールのモノまたはジアクリレート類;N,N−ジメチルアクリルアミド、N−メチロールアクリルアミド、N,N−ジメチルアミノプロピルアクリルアミドなどのアクリルアミド類;N,N−ジメチルアミノエチルアクリレート、N,N−ジメチルアミノプロピルアクリレートなどのアミノアルキルアクリレート類;ヘキサンジオール、トリメチロールプロパン、ペンタエリトリトール、ジペンタエリトリトール、トリスヒドロキシエチルイソシアヌレートなどの多価アルコールまたはこれらのエチレンオキシド付加物またはプロピレンオキシド付加物などの多官能アクリレート類;フェノキシアクリレート、ビスフェノールAジアクリレート及びこれらフェノール類のエチレンオキシド付加物またはプロピレンオキシド付加物などのアクリレート類;グリセリンジグリシジルエーテル、グリセリントリグリシジルエーテル、トリメチロールプロパントリグリシジルエーテル、トリグリシジルイソシアヌレートなどのグリシジルエーテルのアクリレート類;メラミンアクリレート及び上記アクリレートに対応する各メタクリレート類のうち少なくともいずれか1種などが挙げられるが、これらに限定されるものではない。一方、ジペンタエリトリトールヘキサアクリレートなどの多官能性アクリレートを用いる場合、熱硬化性樹脂及び/またはカルボキシル基含有樹脂との相溶性に優れることができ、カルボキシル基含有樹脂がアルカリ水溶液などにより不溶化することを効果的に助けることができる。
補強剤は、剛性を付加するために含まれる。補強剤は、無機フィラーであることができる。無機フィラーは、例えば、アルミナ、シリカなどの公知の無機フィラーであることができ、好ましくはシリカであることができるが、これに限定されるものではない。無機フィラー、例えば、シリカは、平均粒径が500nm〜1μmであることができ、最大粒径は5μm以下であることができる。また、無機フィラー、例えば、シリカは60重量%以上含まれることが好ましい。この場合、封止材130に、特に優れた剛性を付与することができる。
開始剤は、光重合開始剤であることができる。光重合開始剤としては、例えば、ベンゾイン、ベンゾインメチルエーテル、ベンゾインエチルエーテル、ベンゾインイソプロピルエーテルなどのベンゾイン及びベンゾインアルキルエーテル類;アセトフェノン、2,2−ジメトキシ−2−フェニルアセトフェノン、2,2−ジエトキシ−2−フェニルアセトフェノン、1,1−ジクロロアセトフェノン、1−[4−(4−ベンゾイルフェニルスルファニル)−2−メチル−2−(4−メチルフェニルスルファニル)プロパン−1−オンなどのアセトフェノン類;2−メチル−1−[4−(メチルチオ)フェニル]−2−モルホリノプロパノン−1、2−ベンジル−2−ジメチルアミノ−1−(4−モルホリノフェニル)−ブタノン−1などのアミノアセトフェノン類;2−メチルアントラキノン、2−エチルアントラキノン、2−tert−ブチルアントラキノン、1−クロロアントラキノンなどのアントラキノン類;2,4−ジメチルチオキサントン、2,4−ジエチルチオキサントン、2−クロロチオキサントン、2,4−ジイソプロピルチオキサントンなどのチオキサントン類;アセトフェノンジメチルケタール、ベンジルジメチルケタールなどのケタール類;ベンゾフェノンなどのベンゾフェノン類またはキサントン類;ビス(2,6−ジメトキシベンゾイル)(2,4,4−トリメチルペンチル)ホスフィンオキシド、ビス(2,4,6−トリメチルベンゾイル)−フェニルホスフィンオキシド、2,4,6−トリメチルベンゾイルジフェニルホスフィンオキシド、エチル−2,4,6−トリメチルベンゾイルフェニルホスフィン酸エステルなどのアシルホスフィンオキシド類;各種のパーオキシド類などが挙げられるが、これらの公知慣用の光重合開始剤を単独で、または2種以上を組み合わせて用いることができる。
溶剤としては、ケトン類、芳香族炭化水素類、グリコールエーテル類、グリコールエーテルアセテート類、エステル類、アルコール類、脂肪族炭化水素、石油系溶剤などが挙げられる。より具体的には、メチルエチルケトン、シクロヘキサノンなどのケトン類;トルエン、キシレン、テトラメチルベンゼンなどの芳香族炭化水素類;セロソルブ、メチルセルソルブ、ブチルセルソルブ、カルビトール、メチルカルビトール、ブチルカルビトール、プロピレングリコールモノメチルエーテル、ジプロピレングリコールモノメチルエーテル、ジプロピレングリコールジエチルエーテル、トリエチレングリコールモノエチルエーテルなどのグリコールエーテル類;酢酸エチル、酢酸ブチル、ジプロピレングリコールメチルエーテルアセテート、プロピレングリコールメチルエーテルアセテート、プロピレングリコールエチルエーテルアセテート、プロピレングリコールブチルエーテルアセテートなどのエステル類;エタノール、プロパノール、エチレングリコール、プロピレングリコールなどのアルコール類;オクタン、デカンなどの脂肪族炭化水素;石油エーテル、石油ナフサ、水素添加石油ナフサ、ソルベントナフサなどの石油系溶剤などであることができる。これらは、単独で、または2種以上の混合物で用いることができる。
1010 メインボード
1020 チップ関連部品
1030 ネットワーク関連部品
1040 その他の部品
1050 カメラ
1060 アンテナ
1070 ディスプレイ
1080 電池
1090 信号ライン
1100 スマートフォン
1101 本体
1110 メインボード
1120 部品
1130 カメラ
2200 ファン−イン半導体パッケージ
2220 半導体チップ
2221 本体
2222 接続パッド
2223 パッシベーション膜
2240 連結部材
2241 絶縁層
2242 再配線層
2243 ビア
2250 パッシベーション層
2260 アンダーバンプ金属層
2270 半田ボール
2280 アンダーフィル樹脂
2290 モールディング材
2500 メインボード
2301 インターポーザ基板
2302 インターポーザ基板
2100 ファン−アウト半導体パッケージ
2120 半導体チップ
2121 本体
2122 接続パッド
2140 連結部材
2141 絶縁層
2142 再配線層
2143 ビア
2150 パッシベーション層
2160 アンダーバンプ金属層
2170 半田ボール
100 半導体パッケージ
100A ファン−アウト半導体パッケージ
100B ファン−アウト半導体パッケージ
100C ファン−アウト半導体パッケージ
110 連結部材
111、111a、111b、111c 絶縁層
112a、112b、112c、112d 再配線層
113、113a、113b、113c ビア
120 半導体チップ
121 本体
122 接続パッド
123 パッシベーション膜
130 封止材
131 開口部
140 連結部材
141 絶縁層
142 再配線層
143 ビア
150 パッシベーション層
151 開口部
160 アンダーバンプ金属層
170 接続端子
Claims (16)
- 接続パッドが配置された活性面及び前記活性面の反対側に配置された非活性面を有する半導体チップと、
前記半導体チップの少なくとも一部を封止する封止材と、
前記半導体チップの活性面上に配置された第1連結部材と、を含み、
前記封止材は、(A)熱硬化性樹脂、(B)カルボキシル基含有樹脂、(C)エチレン性不飽和化合物、及び(D)補強剤を含む感光性樹脂組成物の硬化物である、ファン−アウト半導体パッケージ。 - 前記カルボキシル基含有樹脂は、熱硬化性反応基及びエチレン性不飽和基を有する、請求項1に記載のファン−アウト半導体パッケージ。
- 前記(A)熱硬化性樹脂はエポキシ樹脂を含み、
前記(B)カルボキシル基含有樹脂はカルボキシル基含有エポキシアクリレート樹脂を含み、
前記(C)エチレン性不飽和化合物はアクリレート化合物を含み、
前記(D)補強剤は無機フィラーを含む、請求項1または請求項2に記載のファン−アウト半導体パッケージ。 - 前記(A)エポキシ樹脂は、(a−1)ビスフェノールA型エポキシ樹脂及び(a−2)ビフェニル型エポキシ樹脂のうち少なくとも一つを含む、請求項3に記載のファン−アウト半導体パッケージ。
- 前記(B)カルボキシル基含有エポキシアクリレート樹脂は、(b−1)カルボキシル基含有クレゾールノボラック型エポキシアクリレート樹脂及び(b−2)カルボキシル基含有ビスフェノール型エポキシアクリレート樹脂のうち少なくとも一つを含む、請求項3または請求項4に記載のファン−アウト半導体パッケージ。
- 前記(C)アクリレート化合物は、(c−1)多官能性アクリレートを含む、請求項3から請求項5の何れか一項に記載のファン−アウト半導体パッケージ。
- 前記(D)無機フィラーは、(d−1)シリカを含む、請求項3から請求項6の何れか一項に記載のファン−アウト半導体パッケージ。
- 貫通孔を有する第2連結部材をさらに含み、
前記半導体チップは前記貫通孔に配置される、請求項1から請求項7の何れか一項に記載のファン−アウト半導体パッケージ。 - 前記第2連結部材は、第1絶縁層と、前記第1連結部材と接し、前記第1絶縁層に埋め込まれた第1再配線層と、前記第1絶縁層の前記第1再配線層が埋め込まれた側の反対側上に配置された第2再配線層と、を含み、
前記第1及び第2再配線層は前記接続パッドと電気的に連結される、請求項8に記載のファン−アウト半導体パッケージ。 - 前記第2連結部材は、前記第1絶縁層上に配置され、前記第2再配線層を覆う第2絶縁層と、前記第2絶縁層上に配置された第3再配線層と、をさらに含み、
前記第3再配線層は前記接続パッドと電気的に連結される、請求項9に記載のファン−アウト半導体パッケージ。 - 前記第2連結部材は、第1絶縁層と、前記第1絶縁層の両面に配置された第1再配線層及び第2再配線層と、前記第1絶縁層上に配置され、前記第1再配線層を覆う第2絶縁層と、前記第2絶縁層上に配置された第3再配線層と、を含み、
前記第1〜第3再配線層は前記接続パッドと電気的に連結される、請求項8に記載のファン−アウト半導体パッケージ。 - 前記第2連結部材は、前記第1絶縁層上に配置され、前記第2再配線層を覆う第3絶縁層と、前記第3絶縁層上に配置された第4再配線層と、をさらに含み、
前記第4再配線層は前記接続パッドと電気的に連結される、請求項11に記載のファン−アウト半導体パッケージ。 - (A)熱硬化性樹脂と、
(B)カルボキシル基含有樹脂と、
(C)エチレン性不飽和化合物と、
(D)補強剤と、
を含む、感光性樹脂組成物。 - (E)開始剤と、
(F)溶剤と、
をさらに含む、請求項13に記載の感光性樹脂組成物。 - 前記(A)熱硬化性樹脂はエポキシ樹脂を含み、
前記(B)カルボキシル基含有樹脂はカルボキシル基含有エポキシアクリレート樹脂を含み、
前記(C)エチレン性不飽和化合物はアクリレート化合物を含み、
前記(D)補強剤は無機フィラーを含み、
前記(E)開始剤は光重合開始剤を含む、請求項14に記載の感光性樹脂組成物。 - 前記(D)無機フィラーは60重量%以上含む、請求項15に記載の感光性樹脂組成物。
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