WO2012049742A1 - 流量センサおよびその製造方法並びに流量センサモジュールおよびその製造方法 - Google Patents

流量センサおよびその製造方法並びに流量センサモジュールおよびその製造方法 Download PDF

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Publication number
WO2012049742A1
WO2012049742A1 PCT/JP2010/067946 JP2010067946W WO2012049742A1 WO 2012049742 A1 WO2012049742 A1 WO 2012049742A1 JP 2010067946 W JP2010067946 W JP 2010067946W WO 2012049742 A1 WO2012049742 A1 WO 2012049742A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor chip
flow rate
rate detection
detection unit
resin
Prior art date
Application number
PCT/JP2010/067946
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English (en)
French (fr)
Japanese (ja)
Inventor
河野　務
裕樹 岡本
毅 森野
半沢　恵二
Original Assignee
日立オートモティブシステムズ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立オートモティブシステムズ株式会社 filed Critical 日立オートモティブシステムズ株式会社
Priority to PCT/JP2010/067946 priority Critical patent/WO2012049742A1/ja
Priority to CN201410244763.0A priority patent/CN103994795B/zh
Priority to CN201510757401.6A priority patent/CN105333913B/zh
Priority to MX2015001324A priority patent/MX349742B/es
Priority to KR1020147003025A priority patent/KR101414755B1/ko
Priority to MX2012003145A priority patent/MX2012003145A/es
Priority to KR1020127005443A priority patent/KR101444867B1/ko
Priority to CN201510757388.4A priority patent/CN105486364B/zh
Priority to KR1020147003019A priority patent/KR101411440B1/ko
Priority to EP11818969.5A priority patent/EP2629065A4/en
Priority to CN201180003582.3A priority patent/CN102575955B/zh
Priority to US13/393,155 priority patent/US8640538B2/en
Priority to EP18175855.8A priority patent/EP3421949B1/en
Priority to CN201410244748.6A priority patent/CN103994794B/zh
Priority to PCT/JP2011/070900 priority patent/WO2012049934A1/ja
Priority to JP2012501490A priority patent/JP5220955B2/ja
Priority to JP2012062472A priority patent/JP5456815B2/ja
Priority to JP2012062473A priority patent/JP5456816B2/ja
Publication of WO2012049742A1 publication Critical patent/WO2012049742A1/ja
Priority to US14/143,553 priority patent/US9222813B2/en
Priority to JP2014001993A priority patent/JP5909250B2/ja
Priority to US14/210,787 priority patent/US9222814B2/en
Priority to JP2016061504A priority patent/JP6220914B2/ja

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
    • G01F1/6845—Micromachined devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/05—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects
    • G01F1/34—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure
    • G01F1/36—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure the pressure or differential pressure being created by the use of flow constriction
    • G01F1/38—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure the pressure or differential pressure being created by the use of flow constriction the pressure or differential pressure being measured by means of a movable element, e.g. diaphragm, piston, Bourdon tube or flexible capsule
    • G01F1/383—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure the pressure or differential pressure being created by the use of flow constriction the pressure or differential pressure being measured by means of a movable element, e.g. diaphragm, piston, Bourdon tube or flexible capsule with electrical or electro-mechanical indication
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/696—Circuits therefor, e.g. constant-current flow meters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/05—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects
    • G01F1/34—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
    • G01F1/688—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element
    • G01F1/69—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element of resistive type
    • G01F1/692—Thin-film arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/696—Circuits therefor, e.g. constant-current flow meters
    • G01F1/698—Feedback or rebalancing circuits, e.g. self heated constant temperature flowmeters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F5/00—Measuring a proportion of the volume flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10157—Shape being other than a cuboid at the active surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device

Definitions

  • the present invention relates to a flow sensor and a manufacturing technique thereof, and a flow sensor module and a manufacturing technique thereof, and particularly relates to a technique effective when applied to a package structure of a flow sensor and a flow sensor module.
  • Patent Document 1 discloses a flow rate sensor in which a semiconductor chip is mounted on a support member, and the semiconductor chip and an external connection terminal arranged outside the support member are connected by a wire. The structure of is described. At this time, it is disclosed that the wire connecting the semiconductor chip and the external connection terminal is sealed with resin.
  • Patent Document 2 discloses a first semiconductor chip in which a flow rate detection unit of a flow rate sensor is formed on a support member and a second semiconductor in which a control circuit unit for controlling the flow rate detection unit is formed. A configuration for mounting a chip is described. The first semiconductor chip and the second semiconductor chip are connected by a wire, and the second semiconductor chip and the wire are covered with a resin. On the other hand, the surface of the first semiconductor chip on which the flow rate detection unit is formed is exposed, and resin is formed so as to cover the side surface of the first semiconductor chip. At this time, the height of the resin formed so as to cover the side surface of the first semiconductor chip and the exposed surface of the first semiconductor chip are flush with each other.
  • Patent Document 3 also has a semiconductor chip mounted on a support member, as in Patent Document 1, and this semiconductor chip and an external connection terminal arranged outside the support member are wired. The structure of the flow sensor connected with is described. At this time, it is disclosed that the wire connecting the semiconductor chip and the external connection terminal is sealed with resin.
  • an internal combustion engine such as an automobile is provided with an electronically controlled fuel injection device.
  • This electronically controlled fuel injection device has the role of operating the internal combustion engine efficiently by appropriately adjusting the amount of gas (air) and fuel flowing into the internal combustion engine. For this reason, in the electronically controlled fuel injection device, it is necessary to accurately grasp the gas (air) flowing into the internal combustion engine. For this reason, the electronic control fuel injection device is provided with a flow rate sensor (air flow sensor) for measuring the flow rate of gas (air).
  • a flow sensor manufactured by a semiconductor micromachining technology is particularly attracting attention because it can reduce cost and can be driven with low power.
  • Such a flow sensor for example, forms a diaphragm (thin portion) formed by anisotropic etching on the back surface of a semiconductor substrate made of silicon, and forms a heating resistor and a temperature measuring device on the surface of the semiconductor substrate opposite to the diaphragm.
  • the flow rate detection part which consists of a resistor is formed.
  • the actual flow rate sensor has a second semiconductor chip on which a control circuit unit for controlling the flow rate detection unit is formed.
  • the first semiconductor chip and the second semiconductor chip described above are mounted on a substrate, for example, and are electrically connected to wiring (terminals) formed on the substrate.
  • the first semiconductor chip is connected to a wiring formed on the substrate by a wire made of a gold wire, and the second semiconductor chip uses a bump electrode formed on the second semiconductor chip. , Connected to the wiring formed on the substrate. In this way, the first semiconductor chip and the second semiconductor chip mounted on the substrate are electrically connected via the wiring formed on the substrate.
  • the flow rate detection unit formed in the first semiconductor chip can be controlled by the control circuit unit formed in the second semiconductor chip, and a flow rate sensor is configured.
  • the gold wire (wire) connecting the first semiconductor chip and the substrate is usually fixed by potting resin in order to prevent contact due to deformation. That is, the gold wire (wire) is covered and fixed by the potting resin, and the gold wire (wire) is protected by the potting resin.
  • the first semiconductor chip and the second semiconductor chip constituting the flow sensor are usually not sealed with potting resin.
  • a normal flow sensor has a structure in which only a gold wire (wire) is covered with a potting resin.
  • the fixing of the gold wire (wire) with the potting resin is not performed in a state in which the first semiconductor chip is fixed with a mold or the like. Therefore, the contraction of the potting resin causes the first semiconductor chip to deviate from the mounting position. There's a problem. Furthermore, since the potting resin is formed by dropping, there is a problem that the dimensional accuracy of the potting resin is low. As a result, the mounting position of the first semiconductor chip on which the flow rate detection unit is formed varies for each individual flow sensor, and the formation position of the potting resin is slightly different. Variations will occur.
  • An object of the present invention is to provide a technique capable of suppressing performance variation for each flow sensor.
  • a flow sensor includes: (a) a chip mounting portion on which a semiconductor chip on which a plurality of pads are formed is mounted; (b) a plurality of leads disposed outside the chip mounting portion; c) including the semiconductor chip disposed on the chip mounting portion; and (d) a plurality of wires that connect each of the plurality of leads and each of the plurality of pads formed on the semiconductor chip.
  • the semiconductor chip includes (c1) a flow rate detection unit formed on the main surface of the semiconductor substrate, (c2) a control circuit unit that controls the flow rate detection unit, and (c3) the main surface of the semiconductor substrate. The diaphragm formed in the area
  • the flow rate sensor includes a pair of air flow control units having a long shape in a direction parallel to a traveling direction of the gas flowing on the flow rate detection unit with the exposed flow rate detection unit interposed therebetween. It is characterized by being formed integrally with.
  • the flow sensor includes (a) a chip mounting portion for mounting a semiconductor chip on which a plurality of pads are formed, and (b) a plurality of leads disposed outside the chip mounting portion. (C) the semiconductor chip disposed on the chip mounting portion; and (d) a plurality of wires connecting each of the plurality of leads and each of the plurality of pads formed on the semiconductor chip; Is provided.
  • the semiconductor chip includes (c1) a flow rate detection unit formed on the main surface of the semiconductor substrate, (c2) a control circuit unit that controls the flow rate detection unit, and (c3) the main surface of the semiconductor substrate. The diaphragm formed in the area
  • a part of the chip mounting part, a part of each of the plurality of leads, a part of the semiconductor chip, and the plurality of parts are sealed with a sealing body made of resin.
  • the height of the sealing body on both sides of the exposed flow rate detection unit is higher than the height of the surface of the semiconductor chip including the flow rate detection unit.
  • the flow sensor includes (a) a chip mounting portion for mounting a semiconductor chip on which a plurality of pads are formed, and (b) a plurality of leads disposed outside the chip mounting portion. (C) the semiconductor chip disposed on the chip mounting portion; and (d) a plurality of wires connecting each of the plurality of leads and each of the plurality of pads formed on the semiconductor chip; Is provided.
  • the semiconductor chip includes (c1) a flow rate detection unit formed on the main surface of the semiconductor substrate, (c2) a control circuit unit that controls the flow rate detection unit, and (c3) the main surface of the semiconductor substrate. The diaphragm formed in the area
  • a part of the chip mounting part, a part of each of the plurality of leads, a part of the semiconductor chip, and the plurality of parts are sealed with a sealing body made of resin.
  • the first mounting portion is formed in the chip mounting portion at a position overlapping with the diaphragm in plan view, and the back surface of the sealing body is positioned at the position overlapping with the diaphragm in plan view.
  • a second opening is formed, and the first opening and the second opening are arranged to communicate with each other, and a cross-sectional area of the first opening is greater than a cross-sectional area of the second opening. Is also small.
  • a flow rate sensor manufacturing method includes (a) a step of preparing a lead frame in which a first opening is formed, (b) a flow rate detection unit formed on a main surface of a semiconductor substrate, Providing a semiconductor chip having a diaphragm formed in a region opposite to the flow rate detection portion of the back surface of the semiconductor substrate opposite to the main surface. Next, (c) placing the semiconductor chip on the lead frame so that the diaphragm formed on the semiconductor chip and the first opening formed on the lead frame overlap in plan view. And (d) a step of connecting the semiconductor chip and the lead frame with a wire after the step (c).
  • step (e) after the said (d) process, the process of sealing a part of said semiconductor chip is provided, exposing the said flow volume detection part currently formed in the said semiconductor chip.
  • step (e) an upper mold is prepared, and the first protrusion and the cross-sectional area formed on the first protrusion are smaller than the cross-sectional area of the first protrusion.
  • step (e) a step of preparing a lower mold in which a second protrusion having a second surface is formed.
  • step (E2) After the step (e1), the second protrusion formed in the lower mold is inserted into the first opening formed in the lead frame, and the first protrusion A step of sandwiching the lead frame on which the semiconductor chip is mounted between the lower mold and the upper mold through a first space while pressing a portion against the lead frame. And (e3) a step of pouring resin into the first space after the step (e2).
  • a flow rate sensor module includes: (a) a flow rate detection unit formed on a main surface of a semiconductor substrate; and a flow rate detection unit among a back surface opposite to the main surface of the semiconductor substrate.
  • a flow rate sensor in which a semiconductor chip having a diaphragm formed in a region opposite to each other is sealed with a first resin while exposing the flow rate detection unit, and (b) gas is supplied to the flow rate detection unit of the flow rate sensor. And a channel portion for guiding.
  • the flow sensor module includes a second resin formed so as to cover the outer side of the first resin sealing the flow sensor and to expose the flow rate detection unit. Have.
  • the said flow-path part is formed so that it may connect with the said flow-rate detection part of the said flow sensor, It is comprised so that the said gas may be guide
  • the manufacturing method of the flow sensor module includes (a) a flow rate detection unit formed on the main surface of the semiconductor substrate, and a back surface opposite to the main surface of the semiconductor substrate. And a step of preparing a flow rate sensor in which a semiconductor chip having a diaphragm formed in a region facing the flow rate detection unit is sealed with a first resin while exposing the flow rate detection unit. And (b) after the step (a), a step of sealing a part of the flow rate sensor while exposing the flow rate detection unit formed in the flow rate sensor.
  • the step (b) includes (b1) a step of preparing an upper die and a lower die, (b2) after the step (b1), the lower die and the upper die, and the flow rate sensor. Is interposed between the first space and the first space. And (b3) a step of pouring the second resin into the first space after the step (b2).
  • the flow rate sensor is sandwiched between the lower die and the upper die so that the flow rate detection unit formed in the flow rate sensor is surrounded by a second space isolated from the first space.
  • a part of the flow rate sensor is sealed with the second resin while exposing the flow rate detection part formed in the flow rate sensor.
  • FIG. 3 is a plan view showing a layout configuration of a semiconductor chip that constitutes a part of the flow sensor in the first embodiment.
  • (A) is a top view which shows the mounting structure of the flow sensor in a prior art
  • (b) is sectional drawing in the AA of (a).
  • (A) is a top view which shows the mounting structure before sealing of the flow sensor in Embodiment 1.
  • FIG. (B) is a cross-sectional view taken along line AA of (a)
  • (c) is a plan view showing the back surface of the semiconductor chip.
  • A) is a top view which shows the mounting structure after sealing of the flow sensor in Embodiment 1.
  • FIG. 1 is a top view which shows the mounting structure after sealing of the flow sensor in Embodiment 1.
  • FIG. 6 is a cross-sectional view showing a manufacturing process of the flow sensor in the first embodiment. It is sectional drawing which shows the manufacturing process of the flow sensor following FIG.
  • FIG. 8 is a cross-sectional view showing the flow sensor manufacturing process following FIG. 7. It is sectional drawing which shows the manufacturing process of the flow sensor following FIG.
  • FIG. 10 is a cross-sectional view showing a flow sensor manufacturing process following FIG. 9.
  • A) is a top view which shows the mounting structure after sealing of the flow sensor in Embodiment 2.
  • FIG. (B) is a cross-sectional view taken along line AA in (a), and (c) is a cross-sectional view taken along line BB in (a).
  • A) is a top view which shows the mounting structure before sealing of the flow sensor in Embodiment 3.
  • FIG. (B) is a cross-sectional view taken along line AA of (a), and (c) is a plan view showing the back surface of the semiconductor chip.
  • A) is a top view which shows the mounting structure after sealing of the flow sensor in Embodiment 3.
  • FIG. (B) is a cross-sectional view taken along line AA in (a)
  • (c) is a cross-sectional view taken along line BB in (a).
  • FIG. 10 is a cross-sectional view showing a manufacturing process of the flow sensor in the third embodiment.
  • FIG. 16 is a cross-sectional view showing the manufacturing process of the flow sensor following FIG. 15.
  • FIG. 17 is a cross-sectional view showing a manufacturing process for the flow sensor following FIG. 16.
  • FIG. 18 is a cross-sectional view showing the flow sensor manufacturing process following FIG. 17. It is sectional drawing which shows the manufacturing process of the flow sensor following FIG. (A) is a top view which shows the mounting structure after sealing of the flow sensor in Embodiment 4.
  • FIG. 10 is a cross-sectional view showing a manufacturing process of the flow sensor in the third embodiment.
  • FIG. 16 is a cross-sectional view showing the manufacturing process of the flow sensor following FIG. 15.
  • FIG. 17 is a cross-sectional view showing a manufacturing process for the flow sensor following FIG. 16.
  • FIG. 18 is a cross-sectional view showing the flow sensor manufacturing process following FIG. 17.
  • FIG. (B) is a cross-sectional view taken along line AA in (a), and (c) is a cross-sectional view taken along line BB in (a). It is a top view which shows the mounting structure of the flow sensor after removing a dam.
  • (A) is a top view which shows the mounting structure before sealing of the flow sensor in Embodiment 5.
  • FIG. (B) is a cross-sectional view taken along line AA in (a)
  • (c) is a cross-sectional view taken along line BB in (a).
  • (d) is a plan view showing the back surface of the semiconductor chip.
  • (A) is a top view which shows the mounting structure after sealing of the flow sensor in Embodiment 5.
  • FIG. 10 is a cross-sectional view showing a manufacturing process of the flow sensor in the fifth embodiment.
  • FIG. 26 is a cross-sectional view showing the flow rate sensor manufacturing process following FIG. 25.
  • FIG. 27 is a cross-sectional view showing the flow rate sensor manufacturing process following FIG. 26. It is sectional drawing which shows the manufacturing process of the flow sensor following FIG. (A) is a top view which shows the mounting structure after sealing of the flow sensor in Embodiment 6.
  • FIG. 10 is a cross-sectional view showing a manufacturing process of the flow sensor in the fifth embodiment.
  • FIG. 26 is a cross-sectional view showing the flow rate sensor manufacturing process following FIG. 25.
  • FIG. 27 is a cross-sectional view showing the flow rate sensor manufacturing process following FIG. 26. It is sectional drawing which shows the manufacturing process of the flow sensor following FIG. (A) is a top view which shows the mounting structure after sealing of the flow sensor in Embodiment 6.
  • FIG. 1 is a cross-sectional view taken along line AA in (a), and (c) is a cross-sectional view taken along line BB in (a). It is a top view which shows the mounting structure of the flow sensor after removing a dam.
  • (A) is a top view which shows the mounting structure after sealing of the flow sensor in Embodiment 7, (b) is sectional drawing cut
  • (A) is a top view which shows the mounting structure after sealing of the flow sensor in Embodiment 8, (b) is sectional drawing cut
  • A) is a top view which shows the mounting structure of the flow sensor module in Embodiment 9.
  • FIG. 35 is a cross-sectional view showing the manufacturing process of the flow sensor module following FIG. 34.
  • FIG. 36 is a cross-sectional view showing the flow rate sensor module manufacturing process following FIG. 35.
  • A) is a top view which shows the mounting structure of the flow sensor module in Embodiment 10.
  • FIG. (B) is a cross-sectional view taken along line AA in (a), and (c) is a cross-sectional view taken along line BB in (a).
  • FIG. (A) is a top view which shows the mounting structure of the flow sensor module in Embodiment 11.
  • FIG. (B) is a cross-sectional view taken along line AA in (a)
  • (c) is a cross-sectional view taken along line BB in (a).
  • the constituent elements are not necessarily indispensable unless otherwise specified and apparently essential in principle. Needless to say.
  • FIG. 1 is a circuit block diagram showing a circuit configuration of the flow sensor according to the first embodiment.
  • the flow sensor in the first embodiment has a CPU (Central Processing Unit) 1 for controlling the flow sensor, and an input circuit 2 for inputting an input signal to the CPU 1. And it has the output circuit 3 for outputting the output signal from CPU1.
  • the flow rate sensor is provided with a memory 4 for storing data, and the CPU 1 can access the memory 4 and refer to the data stored in the memory 4.
  • the CPU 1 is connected to the base electrode of the transistor Tr through the output circuit 3.
  • the collector electrode of the transistor Tr is connected to the power source PS, and the emitter electrode of the transistor Tr is connected to the ground (GND) via the heating resistor HR. Therefore, the transistor Tr is controlled by the CPU 1. That is, since the base electrode of the transistor Tr is connected to the CPU 1 via the output circuit 3, an output signal from the CPU 1 is input to the base electrode of the transistor Tr. As a result, the current flowing through the transistor Tr is controlled by an output signal (control signal) from the CPU 1.
  • the current flowing through the transistor Tr is increased by the output signal from the CPU 1, the current supplied from the power source PS to the heating resistor HR is increased, and the heating amount of the heating resistor HR is increased.
  • the flow rate sensor according to the first embodiment is configured such that the amount of current flowing through the heating resistor HR is controlled by the CPU 1 and the amount of heat generated from the heating resistor HR is thereby controlled by the CPU 1. I understand that.
  • a heater control bridge HCB is provided in order to control the current flowing through the heating resistor HR by the CPU 1.
  • the heater control bridge HCB is configured to detect the amount of heat released from the heating resistor HR and output the detection result to the input circuit 2.
  • the CPU 1 can input the detection result from the heater control bridge HCB, and controls the current flowing through the transistor Tr based on this.
  • the heater control bridge HCB includes resistors R1 to R4 that form a bridge between the reference voltage Vref1 and the ground (GND).
  • the heater control bridge HCB configured as described above, when the gas heated by the heating resistor HR is higher than the intake air temperature by a certain temperature ( ⁇ T, for example, 100 ° C.), the potential of the node A and the node B
  • ⁇ T the temperature
  • the resistance values of the resistors R1 to R4 are set so that the potential difference between the potentials of the resistors R1 to R4 is 0V.
  • the resistors R1 to R4 constituting the heater control bridge HCB are referred to as a component in which the resistor R1 and the resistor R3 are connected in series and a component in which the resistor R2 and the resistor R4 are connected in series.
  • the bridge is configured so as to be connected in parallel between the voltage Vref1 and the ground (GND).
  • a connection point between the resistor R1 and the resistor R3 is a node A
  • a connection point between the resistor R2 and the resistor R4 is a node B. At this time, the gas heated by the heating resistor HR comes into contact with the resistor R1 constituting the heater control bridge HCB.
  • the resistance value of the resistor R1 constituting the heater control bridge HCB mainly changes depending on the amount of heat generated from the heating resistor HR.
  • the resistance value of the resistor R1 changes in this way, the potential difference between the node A and the node B changes. Since the potential difference between the node A and the node B is input to the CPU 1 via the input circuit 2, the CPU 1 controls the current flowing through the transistor Tr based on the potential difference between the node A and the node B. Specifically, the CPU 1 controls the amount of heat generated from the heating resistor HR by controlling the current flowing through the transistor Tr so that the potential difference between the node A and the node B becomes 0V.
  • the CPU 1 causes the gas heated by the heating resistor HR to be only a certain temperature ( ⁇ T, for example, 100 ° C.) higher than the intake air temperature based on the output of the heater control bridge HCB. It can be seen that the feedback control is performed so as to maintain a high constant value.
  • the flow sensor in the first embodiment has a temperature sensor bridge TSB for detecting the gas flow rate.
  • the temperature sensor bridge TSB is composed of four temperature measuring resistors that form a bridge between the reference voltage Vref2 and the ground (GND).
  • the four resistance temperature detectors are composed of two upstream resistance temperature detectors UR1 and UR2, and two downstream resistance temperature detectors BR1 and BR2. That is, the direction of the arrow in FIG. 1 indicates the direction in which the gas flows.
  • the upstream resistance thermometers UR1 and UR2 are provided on the upstream side of the gas flow direction, and the downstream resistance thermometers BR1 and BR2 is provided.
  • the upstream resistance thermometers UR1 and UR2 and the downstream resistance thermometers BR1 and BR2 are arranged so that the distance to the heating resistor HR is the same.
  • an upstream resistance temperature detector UR1 and a downstream resistance temperature detector BR1 are connected in series between the reference voltage Vref2 and the ground (GND), and the upstream resistance temperature detector UR1 and the downstream resistance temperature detector.
  • the connection point of BR1 is node C.
  • an upstream resistance temperature detector UR2 and a downstream resistance temperature detector BR2 are connected in series between the ground (GND) and the reference voltage Vref2, and a connection point between the upstream resistance temperature detector UR2 and the downstream resistance temperature detector BR2. Is node D. Then, the potential of the node C and the potential of the node D are configured to be input to the CPU 1 via the input circuit 2.
  • the upstream resistance thermometers UR1 and UR2 and the downstream temperature sensor are set so that the potential difference between the potential of the node C and the potential of the node D becomes 0V when the flow rate of the gas flowing in the arrow direction is zero.
  • Each resistance value of the resistors BR1 and BR2 is set.
  • the upstream resistance thermometers UR1 and UR2 and the downstream resistance thermometers BR1 and BR2 are configured to have the same distance from the heating resistor HR and the same resistance value. For this reason, it can be seen that the temperature sensor bridge TSB is configured such that the potential difference between the node C and the node D is 0 V in the absence of wind regardless of the amount of heat generated by the heating resistor HR.
  • the flow sensor according to the first embodiment is configured as described above, and the operation thereof will be described below with reference to FIG.
  • the CPU 1 outputs an output signal (control signal) to the base electrode of the transistor Tr via the output circuit 3, thereby causing a current to flow through the transistor Tr.
  • a current flows from the power supply PS connected to the collector electrode of the transistor Tr to the heating resistor HR connected to the emitter electrode of the transistor Tr.
  • the heating resistor HR generates heat.
  • the gas heated by the heat generated from the heat generating resistor HR heats the resistor R1 constituting the heater control bridge HCB.
  • the resistor is set so that the potential difference between the node A and the node B of the heater control bridge HCB becomes 0V.
  • Each resistance value of R1 to R4 is set. For this reason, for example, when the gas heated by the heating resistor HR is increased by a certain temperature (for example, 100 ° C.), the potential difference between the node A and the node B of the heater control bridge HCB becomes 0V, This difference potential (0 V) is input to the CPU 1 via the input circuit 2. Then, the CPU 1 recognizing that the difference potential from the heater control bridge HCB is 0 V outputs an output signal (control signal) for maintaining the current amount of current to the base electrode of the transistor Tr via the output circuit 3. Output.
  • the CPU 1 controls the control signal so that the current flowing through the transistor Tr decreases. (Output signal) is output to the base electrode of the transistor Tr.
  • a potential difference in a direction in which the gas heated by the heating resistor HR becomes higher than a certain temperature (for example, 100 ° C.) is generated, the CPU 1 increases the current flowing through the transistor Tr.
  • a control signal is output to the base electrode of the transistor Tr.
  • the CPU 1 performs feedback control based on the output signal from the heater control bridge HCB so that the potential difference between the node A and the node B of the heater control bridge HCB is 0 V (equilibrium state). To do. From this, it can be seen that in the flow rate sensor according to the first embodiment, the gas heated by the heating resistor HR is controlled to have a constant temperature.
  • the upstream resistance temperature detectors UR1 and UR2 are set so that the potential difference between the node C potential and the node D potential of the temperature sensor bridge TSB becomes 0V.
  • Each resistance value of the downstream resistance thermometers BR1 and BR2 is set.
  • the upstream resistance thermometers UR1 and UR2 and the downstream resistance thermometers BR1 and BR2 are configured to have the same distance from the heating resistor HR and the same resistance value.
  • the difference potential between the node C and the node D becomes 0V, and this difference potential (0V) is passed through the input circuit 2.
  • the CPU 1 recognizing that the potential difference from the temperature sensor bridge TSB is 0 V recognizes that the flow rate of the gas flowing in the direction of the arrow is zero, and the gas flow rate Q is zero via the output circuit 3. Is output from the flow sensor in the first embodiment.
  • the balance of the temperature sensor bridge TSB is lost, and a non-zero differential potential is generated between the node C and the node D of the temperature sensor bridge TSB.
  • This difference potential is input to the CPU 1 via the input circuit 2.
  • the CPU 1 recognizing that the potential difference from the temperature sensor bridge TSB is not zero recognizes that the flow rate of the gas flowing in the arrow direction is not zero.
  • the CPU 1 accesses the memory 4. Since the memory 4 stores a comparison table (table) in which the difference potential and the gas flow rate are associated with each other, the CPU 1 accessing the memory 4 calculates the gas flow rate Q from the comparison table stored in the memory 4. . In this way, the gas flow rate Q calculated by the CPU 1 is output from the flow rate sensor in the first embodiment via the output circuit 3. As described above, according to the flow rate sensor of the first embodiment, it can be seen that the flow rate of gas can be obtained.
  • the layout configuration of the flow sensor according to the first embodiment will be described.
  • the flow sensor in the first embodiment shown in FIG. 1 is formed on two semiconductor chips.
  • the heating resistor HR, the heater control bridge HCB, and the temperature sensor bridge TSB are formed on one semiconductor chip, and the CPU 1, the input circuit 2, the output circuit 3, the memory 4, and the like are formed on another semiconductor chip.
  • a layout configuration of a semiconductor chip on which the heating resistor HR, the heater control bridge HCB, and the temperature sensor bridge TSB are formed will be described.
  • FIG. 2 is a plan view showing a layout configuration of the semiconductor chip CHP1 that constitutes a part of the flow sensor according to the first embodiment.
  • the semiconductor chip CHP1 has a rectangular shape, and gas flows from the left side to the right side (arrow direction) of the semiconductor chip CHP1.
  • a rectangular diaphragm DF is formed on the back surface side of the rectangular semiconductor chip CHP1.
  • the diaphragm DF indicates a thin plate region where the thickness of the semiconductor chip CHP1 is reduced. That is, the thickness of the region where the diaphragm DF is formed is thinner than the thickness of the other semiconductor chip CHP1.
  • a flow rate detection unit FDU is formed in the surface region of the semiconductor chip CHP1 opposite to the back surface region where the diaphragm DF is thus formed.
  • a heating resistor HR is formed at the center of the flow rate detection unit FDU, and a resistor R1 that forms a heater control bridge is formed around the heating resistor HR.
  • Resistors R2 to R4 constituting the heater control bridge are formed outside the flow rate detection unit FDU.
  • a heater control bridge is constituted by the resistors R1 to R4 formed in this way. In particular, since the resistor R1 constituting the heater control bridge is formed in the vicinity of the heating resistor HR, the temperature of the gas heated by the heat generated from the heating resistor HR is accurately reflected in the resistor R1.
  • the resistors R2 to R4 constituting the heater control bridge are arranged apart from the heating resistor HR, they can be made less susceptible to the heat generated by the heating resistor HR. Therefore, the resistor R1 can be configured to react sensitively to the temperature of the gas heated by the heating resistor HR, and the resistors R2 to R4 are not easily affected by the heating resistor HR and have a constant resistance value. The value can be easily maintained. For this reason, the detection accuracy of the heater control bridge can be increased.
  • upstream resistance thermometers UR1 and UR2 and downstream resistance thermometers BR1 and BR2 are arranged so as to sandwich the heating resistor HR formed in the flow rate detection unit FDU.
  • upstream resistance thermometers UR1 and UR2 are formed on the upstream side in the arrow direction in which gas flows, and downstream resistance thermometers BR1 and BR2 are formed in the downstream in the arrow direction in which gas flows.
  • the temperature sensor bridge is formed by the upstream resistance thermometers UR1 and UR2 and the downstream resistance thermometers BR1 and BR2 arranged in the flow rate detection unit FDU.
  • the heating resistor HR, the upstream resistance thermometers UR1 and UR2, and the downstream resistance thermometers BR1 and BR2 are formed by sputtering a metal film such as platinum or a semiconductor thin film such as polysilicon (polycrystalline silicon), for example. It can be formed by patterning by a method such as ion etching after forming by a method such as the CVD method or the CVD (Chemical Vapor Deposition) method.
  • the heating resistor HR configured as described above, the resistors R1 to R4 constituting the heater control bridge, and the upstream temperature sensing resistors UR1 and UR2 and the downstream temperature sensing resistors BR1 and BR2 constituting the temperature sensor bridge are These are connected to the wiring WL1 and drawn out to the pads PD1 arranged along the lower side of the semiconductor chip CHP1.
  • the semiconductor chip CHP1 constituting a part of the flow sensor according to the first embodiment is laid out.
  • the actual flow rate sensor includes one semiconductor chip on which the heating resistor HR, the heater control bridge HCB and the temperature sensor bridge TSB are formed, and another one on which the CPU 1, the input circuit 2, the output circuit 3, the memory 4, and the like are formed.
  • the semiconductor chip has a structure in which these semiconductor chips are mounted on a substrate.
  • the flow sensor mounted and configured in this way will be described. First, the mounting configuration of the flow sensor in the conventional technology will be described, and then problems in the mounting configuration of the flow sensor in the conventional technology will be described. And the mounting structure of the flow sensor in this Embodiment 1 which gave the device for solving the problem in the mounting structure of the flow sensor in a prior art is demonstrated.
  • FIG. 3 is a diagram showing a mounting configuration of the flow sensor FSP in the prior art.
  • FIG. 3A is a plan view showing the mounting configuration of the flow sensor FSP in the prior art
  • FIG. 3B is a cross-sectional view taken along the line AA in FIG.
  • the flow sensor FSP in the prior art includes a rectangular (rectangular) wiring board WB, and the semiconductor chip CHP1 and the semiconductor chip CHP2 along the X direction of the wiring board WB. Are arranged side by side.
  • the semiconductor chip CHP1 is provided with a flow rate detection unit FDU, and gas flows on the flow rate detection unit FDU. Specifically, the gas flows along the arrow direction (Y direction) on the flow rate detection unit FDU.
  • the flow rate detection unit FDU formed on the semiconductor chip CHP1 is connected to a wiring WL1 provided on the semiconductor chip CHP1, and the wiring WL1 is connected to a wiring WL2 formed on the wiring board WB. ing.
  • the connection region between the wiring WL1 formed on the semiconductor chip CHP1 and the wiring WL2 formed on the wiring substrate WB is covered with the potting resin POT.
  • the wiring WL2 formed on the wiring board WB is connected to the semiconductor chip CHP2, and the semiconductor chip CHP2 is further connected to the wiring WL3 formed on the wiring board WB. In this way, the semiconductor chip CHP1 and the semiconductor chip CHP2 mounted on the wiring board WB are electrically connected.
  • a groove is formed in a partial region of the wiring board WB, and the semiconductor chip CHP1 is disposed inside the groove.
  • a diaphragm DF is formed on the rear surface side of the semiconductor chip CHP1, and a flow rate detection unit FDU is formed on the surface of the semiconductor chip CHP1 opposite to the diaphragm DF.
  • a pad PD1 is formed on the surface of the semiconductor chip CHP1 away from the flow rate detection unit FDU.
  • the flow rate detection unit FDU and the pad PD1 are connected by a wiring WL1 shown in FIG.
  • the semiconductor chip CHP1 is fixed by the bottom of the groove and the adhesive ADH.
  • the adhesive ADH is applied to the back surface of the semiconductor chip CHP1 facing the pad PD1, and the semiconductor chip CHP1 is fixed to the bottom of the groove formed in the wiring board WB by the adhesive ADH.
  • the adhesive material ADH is not formed on the side of the back surface of the semiconductor chip CHP1 where the diaphragm DF is formed, and the external space communicates with the inside of the diaphragm DF.
  • the pressure inside the diaphragm DF can be made equal to the pressure in the external space, and the stress due to the pressure difference acts on the flow rate detection unit FDU formed on the surface of the semiconductor chip CHP1 facing the diaphragm DF. That is restrained.
  • the pad PD1 formed on the semiconductor chip CHP1 is connected to the wiring WL2 formed on the wiring board WB by a wire W1, and the wire W1 is sealed with a potting resin POT.
  • the semiconductor chip CHP2 is connected to the wiring WL2 formed on the wiring board WB by the bump electrode BMP and also connected to the wiring WL3 formed on the wiring board WB via the bump electrode.
  • the flow sensor FSP in the related art is mounted and configured.
  • the conventional flow sensor FSP has the following problems.
  • the gold wire (wire W1) that connects the semiconductor chip CHP1 and the wiring board WB is usually fixed by the potting resin POT in order to prevent contact due to deformation. That is, the gold wire (wire W1) is covered and fixed by the potting resin POT, and the gold wire (wire W1) is protected by the potting resin POT.
  • the semiconductor chip CHP1 and the semiconductor chip CHP2 constituting the flow sensor FSP are usually not sealed with the potting resin POT. That is, the normal flow sensor FSP has a structure in which only the gold wire (wire W1) is covered with the potting resin POT.
  • the fixing of the gold wire (wire W1) with the potting resin POT is not performed in a state where the semiconductor chip CHP1 is fixed with a mold or the like. Therefore, the semiconductor chip CHP1 is displaced from the mounting position due to the shrinkage of the potting resin POT. There is a problem. Furthermore, since the potting resin POT is formed by dropping, there is a problem that the dimensional accuracy of the potting resin POT is low. As a result, the mounting position of the semiconductor chip CHP1 in which the flow rate detection unit FDU is formed is shifted for each flow sensor FSP, and the formation position of the potting resin POT is slightly different. There will be variations in detection performance.
  • FIG. 4 is a diagram showing a mounting configuration of the flow sensor FS1 in the first embodiment, and is a diagram showing a configuration before sealing with resin.
  • FIG. 4A is a plan view showing a mounting configuration of the flow rate sensor FS1 in the first embodiment.
  • 4B is a cross-sectional view taken along the line AA in FIG. 4A, and
  • FIG. 4C is a plan view showing the back surface of the semiconductor chip CHP1.
  • the flow sensor FS1 includes a rectangular wiring board WB made of, for example, a glass epoxy resin, and is mounted on the wiring board WB.
  • Semiconductor chips CHP1 and CHP2 are mounted so as to be aligned in the X direction.
  • the semiconductor chip CHP1 has a rectangular shape, and a flow rate detection unit FDU is formed substantially at the center.
  • a wiring WL1 connected to the flow rate detection unit FDU is formed on the semiconductor chip CHP1, and the wiring WL1 is connected to a plurality of pads PD1 formed along one side of the semiconductor chip CHP1. That is, the flow rate detection unit FDU and the plurality of pads PD1 are connected by the wiring WL1.
  • These pads PD1 are connected to a terminal TE1 formed on the wiring board WB via, for example, a wire W1 made of a gold wire.
  • the terminal TE1 formed on the wiring board WB is connected to the wiring WL2 formed on the wiring board WB, and the wiring WL2 is connected to the terminal TE2.
  • the terminal TE2 is connected to a pad PD2 formed on the semiconductor chip CHP2 via a wire W2 made of, for example, a gold wire.
  • an integrated circuit made of semiconductor elements such as MISFET (Metal Insulator Semiconductor Semiconductor Field Field Effect Transistor) and wiring is formed on the semiconductor chip CHP2.
  • MISFET Metal Insulator Semiconductor Semiconductor Field Field Effect Transistor
  • an integrated circuit constituting the CPU 1, the input circuit 2, the output circuit 3 or the memory 4 shown in FIG. 1 is formed.
  • These integrated circuits are connected to the pads PD2 and PD3 that function as external connection terminals.
  • the pad PD3 formed on the semiconductor chip CHP2 is connected to a terminal TE3 formed on the wiring board WB via, for example, a wire W3 made of a gold wire.
  • the terminal TE3 is connected to the wiring board WB.
  • the semiconductor chip CHP1 in which the flow rate detection unit FDU is formed and the semiconductor chip CHP2 in which the control circuit is formed are connected via the wiring WL2 formed on the wiring board WB. Recognize.
  • a groove (cavity) is formed in a predetermined region of the wiring board WB, and the semiconductor chip CHP1 is mounted inside the groove.
  • the semiconductor chip CHP1 is bonded to the wiring board WB with an adhesive ADH1.
  • a diaphragm DF thin plate portion
  • a flow rate detection unit FDU is formed on the surface of the semiconductor chip CHP1 facing the diaphragm DF.
  • an opening OP1 is formed at the bottom of the groove existing below the diaphragm DF.
  • the diaphragm DF has a function of making the flow rate detection unit FDU formed on the surface of the semiconductor chip CHP1 as easily as possible.
  • the flow rate detection unit FDU is formed with upstream resistance temperature detectors UR1 and UR2 and downstream resistance temperature detectors BR1 and BR2.
  • the temperatures of the upstream resistance thermometers UR1 and UR2 and the downstream resistance thermometers BR1 and BR2 change, and due to this temperature change, the upstream resistance thermometer resistances UR1 and UR1,
  • the gas flow rate is detected by utilizing the change in the resistance values of UR2 and downstream resistance temperature detectors BR1 and BR2.
  • the upstream resistance thermometers UR1 and UR2 and the downstream resistance thermometers BR1 and BR2 constituting the flow rate detection unit FDU detect only a temperature change caused by the flow of gas as much as possible. It is desirable to remove temperature changes due to heat conduction through the interior. Therefore, a diaphragm DF, which is a region where the thickness of the semiconductor chip CHP1 is reduced, is provided on the back surface of the semiconductor chip CHP1 facing the flow rate detection unit FDU, and heat is supplied to the flow rate detection unit FDU via the inside of the semiconductor chip CHP1. The effect of conduction is reduced.
  • the semiconductor chip CHP1 is provided with a diaphragm DF. If the inner space of the diaphragm DF is isolated from the outer space of the semiconductor chip CHP1, the pressure in the outer space and the inner pressure in the diaphragm DF are reduced. Will be different. In this case, due to the difference between the pressure in the external space and the internal pressure in the diaphragm DF, stress is generated in the diaphragm DF, and the detection accuracy of the flow rate detection unit FDU formed on the diaphragm DF may be reduced. For this reason, in the first embodiment, the opening OP1 is provided at the bottom of the groove existing below the diaphragm DF.
  • the internal space and the external space of the diaphragm DF communicate with each other through the opening OP1, and the pressure in the external space and the internal pressure in the diaphragm DF can be made equal.
  • a pad PD1 connected to the flow rate detection unit FDU is formed on the surface (upper surface) of the semiconductor chip CHP1, in addition to the flow rate detection unit FDU.
  • the wiring board WB is connected to the wiring WL2 formed on the wiring board WB via the wire W1.
  • a semiconductor chip CHP2 is also mounted on the wiring board WB, and the semiconductor chip CHP2 is bonded to the wiring board WB with an adhesive ADH2.
  • the pad PD2 formed on the semiconductor chip CHP2 and the wiring WL2 formed on the wiring substrate WB are connected via the wire W2.
  • the pad PD3 formed on the semiconductor chip CHP2 and the wiring WL3 formed on the wiring substrate WB are electrically connected via the wire W3.
  • the adhesive ADH1 that bonds the semiconductor chip CHP1 and the wiring board WB, and the adhesive ADH2 that bonds the semiconductor chip CHP2 and the wiring board WB are, for example, thermosetting resins such as epoxy resin and polyurethane resin, A thermoplastic resin such as a polyimide resin or an acrylic resin can be used.
  • FIG. 4C is a plan view showing the back surface of the semiconductor chip CHP1.
  • a diaphragm DF is formed on the back surface of the semiconductor chip CHP1, and an adhesive ADH1 is applied so as to surround the diaphragm DF.
  • FIG. 4C shows an example in which the adhesive ADH1 is applied so as to surround the diaphragm DF in a square shape.
  • the present invention is not limited to this.
  • the diaphragm DF is surrounded by an arbitrary shape such as an elliptical shape.
  • the adhesive ADH1 may be applied.
  • the mounting configuration of the flow sensor FS1 before sealing with resin is configured as described above, and the mounting configuration of the flow sensor FS1 after sealing with resin is described below. Will be described.
  • FIG. 5 is a diagram showing a mounting configuration of the flow sensor FS1 in the first embodiment, and is a diagram showing a configuration after sealing with resin.
  • FIG. 5A is a plan view showing the mounting configuration of the flow sensor FS1 in the first embodiment.
  • 5B is a cross-sectional view taken along the line AA in FIG. 5A
  • FIG. 5C is a cross-sectional view taken along the line BB in FIG. 5A.
  • the flow rate detector FDU formed in the semiconductor chip CHP1 is exposed and the semiconductor is exposed.
  • a part of the chip CHP1 and the entire semiconductor chip CHP2 are covered with the resin MR. This is the first feature point of the first embodiment.
  • the conventional flow sensor FSP shown in FIG. 3 has a structure in which only the gold wire (wire W1) is covered with the potting resin POT, and the semiconductor chip CHP1 and the semiconductor chip CHP2 are not covered with the resin. I am doing.
  • the fixing of the gold wire (wire W1) with the potting resin POT is not performed in a state where the semiconductor chip CHP1 is fixed with a mold or the like. Therefore, the contraction of the potting resin POT causes the semiconductor chip CHP1 to shift from the mounting position. End up.
  • the potting resin POT is formed by dropping, there is a problem that the dimensional accuracy of the potting resin POT is low.
  • the flow rate sensor FS1 in the first embodiment as shown in FIG. 4A, a part of the semiconductor chip CHP1 and the flow rate detection unit FDU formed in the semiconductor chip CHP1 are exposed.
  • the entire semiconductor chip CHP2 is covered with the resin MR. That is, in the first embodiment, the region of the semiconductor chip CHP1 other than the flow rate detection unit FDU and the entire region of the semiconductor chip CHP2 are collectively sealed with the resin MR.
  • the sealing with the resin MR can be performed in a state in which the semiconductor chip CHP1 in which the flow rate detection unit FDU is formed is fixed by a mold, and therefore, the semiconductor chip CHP1 can be prevented from being displaced and one of the semiconductor chips CHP1 is suppressed.
  • the part and the semiconductor chip CHP2 can be sealed with the resin MR.
  • a part of the semiconductor chip CHP1 and the entire region of the semiconductor chip CHP2 can be sealed with the resin MR while suppressing the displacement of each flow sensor FS1.
  • variation in the position of the flow rate detection unit FDU formed in the semiconductor chip CHP1 can be suppressed.
  • the position of the flow rate detection unit FDU that detects the flow rate of gas can be matched by each flow rate sensor FS1, so that there is performance variation in detecting the gas flow rate in each flow rate sensor FS1. The remarkable effect which can be suppressed can be acquired.
  • the semiconductor chip CHP1 can be sealed with the resin MR while fixing the semiconductor chip CHP1 using a mold, a part of the semiconductor chip CHP1 and the semiconductor chip CHP2 are exposed while exposing the flow rate detection unit FDU. It is configured to be collectively sealed with resin MR. That is, according to the first embodiment, since the wiring substrate WB including the semiconductor chip CHP1 can be sealed with the mold, the positioning accuracy of the semiconductor chip CHP1 is improved and the mold is further improved.
  • the heat curing time of the resin MR can be shortened by heat conduction from the resin to the injected resin MR.
  • the conventional flow sensor FSP shown in FIG. 3 uses a potting resin POT.
  • the potting resin POT cannot be heated and cured for a short time, the potting resin POT cannot be cured. The time will be longer. As a result, the throughput decreases and the cost increases.
  • the curing time of the resin MR can be shortened by the heat conduction from the mold to the resin MR injected, so that the throughput can be improved. As a result, the manufacturing cost of the flow sensor FS1 according to the first embodiment can be reduced.
  • thermosetting resin such as an epoxy resin or a phenol resin
  • thermoplastic resin such as polycarbonate or polyethylene terephthalate
  • filler such as glass or mica
  • the second feature point in the first embodiment is that the height of the resin MR (sealing body) on both sides sandwiching the exposed flow rate detection unit FDU, It exists in the point higher than the height of the surface of semiconductor chip CHP1 containing the flow volume detection part FDU. That is, the exposed flow rate detection unit FDU is surrounded by the resin MR, and the height of the resin MR surrounding the flow rate detection unit FDU is higher than the height of the flow rate detection unit FDU.
  • a recess is formed in the resin MR, and the flow rate detection unit FDU is formed inside the recess formed in the resin MR.
  • the height dimension of the resin MR on both sides sandwiching the flow rate detection unit FDU is the exposed surface (XY) of the semiconductor chip CHP1. It can be said that it is larger than the surface.
  • the semiconductor device in which the flow rate detection unit FDU is formed can be prevented from colliding with the flow rate detection unit FDU where the component is exposed at the time of mounting and assembling the component. Breakage of the chip CHP1 can be prevented. That is, the height of the resin MR sandwiching the flow rate detection unit FDU is higher than the height of the exposed flow rate detection unit FDU.
  • the component comes into contact, first, it comes into contact with the high resin MR, so that the exposed surface (XY surface) of the semiconductor chip CHP1 including the low flow rate detection unit FDU comes into contact with the component, and the semiconductor It is possible to prevent the chip CHP1 from being damaged.
  • the semiconductor chip CHP1 is made of the resin MR. And the damage of the semiconductor chip CHP1 can be suppressed.
  • the components are attached to the semiconductor chip CHP1 when mounting and assembling the components. There is a high possibility that the semiconductor chip CHP1 is damaged in contact with the semiconductor chip CHP1.
  • the region of most of the semiconductor chip CHP1 other than the exposed flow rate detection unit FDU is covered with the resin MR, and the exposed flow rate detection unit.
  • the FDU itself is lower than the height of the resin MR, it is possible to effectively prevent the semiconductor chip CHP1 from being damaged.
  • the third feature point in the first embodiment is the direction in which the gas flows on the flow rate detection unit FDU (arrow direction) across the exposed flow rate detection unit FDU.
  • a pair of air flow control units FCU1 and FCU2 having an elongated shape in a direction parallel to the Y direction) is integrally formed with the resin MR (sealing body).
  • the resin MR coupling body
  • the gas flow is disturbed by the dimensional accuracy of the potting resin POT, and there is a possibility that the accurate gas flow rate cannot be measured.
  • the gas flow path dimensions are The gas cannot be flowed to the upper part of the flow rate detection unit FDU in a state where the pressure is reduced. Therefore, particularly when the flow rate of the flowing gas is small, there is a problem that the detection sensitivity of the gas flow rate is lowered.
  • the exposed flow rate detection unit FDU is sandwiched, and the gas flowing in the flow rate detection unit FDU is parallel to the traveling direction (arrow direction, Y direction).
  • a pair of airflow control units FCU1 and FCU2 having a long shape are integrally formed with the resin MR (sealing body).
  • a pair of airflow control units FCU1 and FCU2 form passages on both sides of the gas flowing through the upper part of the flow rate detection unit FDU.
  • the pair of air flow control units FCU1 and FCU2 are formed with high accuracy by being sandwiched by a mold having high dimensional accuracy integrally with the resin MR.
  • the gas flow rate can be accurately measured without the gas flow being disturbed by the dimensional accuracy of the pair of air flow control units FCU1 and FCU2. .
  • a pair of airflow control part FCU1, FCU2 forms the channel
  • the fourth feature point in the first embodiment is that the flow rate detection unit FDU exposed from the resin MR (sealing body) and the resin MR (sealing body)
  • the boundary region has a tapered shape, and the tapered shape of the boundary region orthogonal to the traveling direction (arrow direction, Y direction) of the gas flowing on the flow rate detection unit FDU is parallel to the traveling direction of the gas. This is a point that is steeper than the tapered shape of the boundary region.
  • the angle of the taper shape TP2 in the direction (X direction) orthogonal to the gas flow of the flow rate detection unit FDU is steeper than the angle of the taper shape TP1 in the direction of gas flow (Y direction) of the flow rate detection unit FDU.
  • the angle of the tapered shape TP1 in the gas flow direction (Y direction) is reduced.
  • difference of the flow measurement by the backflow or turbulent flow of gas can be suppressed.
  • the angle of the tapered shape TP2 in the direction orthogonal to the gas flow direction (X direction) the wall of the gas flow path can be formed, and the gas flow in the X direction can be suppressed. it can.
  • the flow sensor FS1 in the first embodiment has the fifth feature point and the sixth feature point.
  • FIG. 5B and FIG. Will be described.
  • 5B is a cross-sectional view taken along the line AA in FIG. 5A
  • FIG. 5C is a cross-sectional view taken along the line BB in FIG. 5A.
  • a groove is formed in the wiring board WB, and the semiconductor chip CHP1 is bonded to the inside of the groove by an adhesive ADH1.
  • a diaphragm DF is formed on the back surface of the semiconductor chip CHP1, and an opening OP1 is formed at the bottom of the groove below the diaphragm DF.
  • a flow rate detection unit FDU is formed on the surface of the semiconductor chip CHP1 facing the diaphragm DF, and a pad PD1 connected to the flow rate detection unit FDU is formed.
  • the pad PD1 is connected to the wiring WL2 formed on the wiring board WB via the wire W1, and the wiring WL2 is formed on the semiconductor chip CHP2 mounted on the wiring board WB via the adhesive ADH2.
  • the pad PD2 is connected with the wire W2.
  • the pad PD3 formed on the semiconductor chip CHP2 is connected to the wiring WL3 formed on the wiring board WB via the wire W3.
  • a part of the wire W2, the semiconductor chip CHP2, the wire W3, and the wiring WL3 are collectively sealed with the resin MR.
  • the exposed boundary region between the flow rate detection unit FDU and the resin MR has a tapered shape TP2, and the pair of air flow control units FCU1 and FCU2 are formed integrally with the resin MR so as to sandwich the flow rate detection unit FDU. Has been.
  • a groove is formed in the wiring board WB, and the semiconductor chip CHP1 is bonded to the inside of the groove by an adhesive ADH1.
  • a diaphragm DF is formed on the back surface of the semiconductor chip CHP1, and an opening OP1 is formed at the bottom of the groove below the diaphragm DF.
  • a flow rate detection unit FDU is formed on the surface of the semiconductor chip CHP1 facing the diaphragm DF, and a resin MR is formed so as to surround the periphery of the semiconductor chip CHP1.
  • the boundary region between the flow rate detection unit FDU and the resin MR has a tapered shape TP1, and the angle of the tapered shape TP1 is gentler than the angle of the tapered shape TP2 shown in FIG.
  • the fifth feature point in the first embodiment is that the bottom of the groove below the diaphragm DF formed on the back surface of the semiconductor chip CHP1.
  • the opening OP1 is formed. The reason why the opening OP1 is provided in the wiring board WB in the first embodiment will be described.
  • the adhesive ADH is applied only to one end of the semiconductor chip CHP1, and the other end is bonded.
  • the material ADH is not applied and a gap is formed.
  • the flow rate sensor FS1 according to the first embodiment shown in FIGS. 5B and 5C cannot take the same configuration as the conventional flow rate sensor FSP shown in FIG. This is because in the flow rate sensor FS1 in the first embodiment, the region of the semiconductor chip CHP1 excluding the flow rate detection unit FDU and the vicinity thereof is covered with the resin MR. That is, in the first embodiment, when a gap is formed between the semiconductor chip CHP1 and the bottom of the groove, the resin MR enters the inner space of the diaphragm DF from the gap.
  • the adhesive material ADH1 is applied to both ends of the semiconductor chip CHP1, and the adhesive material ADH1 prevents the resin MR from entering the inner space of the diaphragm DF.
  • the adhesive ADH1 has an original function of bonding the semiconductor chip CHP1 and the wiring board WB, and prevents the resin MR from entering the inner space of the diaphragm DF. It also has a function peculiar to the first embodiment.
  • the adhesive is provided so as to surround the diaphragm DF formed on the back surface of the semiconductor chip CHP1. The material ADH1 is applied.
  • the inner space of the diaphragm DF and the outer space of the flow sensor FS1 are isolated, and the inner space of the diaphragm DF
  • the pressure in the space is different from the pressure in the external space of the flow sensor FS1, and stress due to the differential pressure is applied to the diaphragm DF. Therefore, in the first embodiment, in order to prevent the resin MR from entering the inner space of the diaphragm DF, for example, as shown in FIG. 4C, the diaphragm formed on the back surface of the semiconductor chip CHP1.
  • the back surface of the semiconductor chip CHP1 An opening OP1 is formed at the bottom of the groove below the diaphragm DF formed in the above.
  • the internal space of the diaphragm DF communicates with the external space of the flow sensor FS1 through the opening OP1 formed in the bottom of the groove of the wiring board WB. become.
  • the pressure in the inner space of the diaphragm DF and the pressure in the outer space of the flow sensor FS1 can be equalized, and stress can be suppressed from being applied to the diaphragm DF.
  • the sixth feature point in the first embodiment is that not only the semiconductor chip CHP1 and the wiring board WB but also the semiconductor chip CHP2 and the wiring board WB are connected by wires W2 and W3.
  • the semiconductor chip CHP2 is connected to the wiring board WB using the bump electrode BMP. This is because when the semiconductor chip CHP2 is also connected with a wire, it is necessary to further seal the wire with a potting resin POT in order to protect the wire. That is, as shown in FIG. 3, since the semiconductor chip CHP1 and the wiring board WB are connected by the wire W1, it is necessary to seal the wire W1 with the potting resin POT. Furthermore, the semiconductor chip CHP2 and the wiring are connected.
  • the semiconductor chip CHP2 is connected to the wiring board WB by the bump electrode BMP, thereby omitting further sealing with the potting resin POT.
  • the semiconductor chip CHP2 is connected to the wiring board WB using the bump electrode, for example, it is necessary to use a solder ball, and there is a problem that the manufacturing cost increases.
  • the semiconductor chip CHP1 and the wiring board WB not only the semiconductor chip CHP1 and the wiring board WB but also the semiconductor chip CHP2 and the wiring board WB are connected by the wires W2 and W3.
  • This configuration can be realized by adopting the characteristic configuration according to the first embodiment in which the entire semiconductor chip CHP1 and the semiconductor chip CHP2 except the flow rate detection unit FDU and the vicinity thereof are collectively sealed with the resin MR. That is, according to the first embodiment, since the semiconductor chip CHP2 is also collectively sealed with the resin MR, the semiconductor chip CHP1 and the wiring board can be connected even if the semiconductor chip CHP2 and the wiring board WB are connected by the wires W2 and W3.
  • the wire W2 and the wire W3 can be protected by the resin MR simultaneously with the wire W1 connecting the WB. That is, in the first embodiment, since the semiconductor chip CHP1 and the semiconductor chip CHP2 are collectively sealed with the resin MR, the connection between the semiconductor chip CHP2 and the wiring board WB is made by the bump electrode, but the wire is made by wire. Note that the sealing of the resin MR is completed in one time. Therefore, in the first embodiment, the manufacturing cost can be reduced by connecting the semiconductor chip CHP2 to the wiring board WB with the wires W2 and W3 without using the solder balls.
  • the flow sensor FS1 in the first embodiment is configured as described above, and the manufacturing method thereof will be described below with reference to FIGS. 6 to 10 show the manufacturing process in the cross section taken along the line AA in FIG.
  • a wiring board WB made of glass epoxy resin is prepared.
  • a groove is formed on the main surface (surface, upper surface) of the wiring board WB, and the opening OP1 is formed at the bottom of the groove.
  • wiring WL2 and wiring WL3 are also formed on the main surface of the wiring board WB.
  • the semiconductor chip CHP1 and the semiconductor chip CHP2 are mounted on the wiring board WB.
  • the semiconductor chip CHP1 is connected to the inside of the groove formed in the wiring board WB with the adhesive ADH1.
  • the semiconductor chip CHP1 is mounted on the wiring board WB so that the diaphragm DF formed on the semiconductor chip CHP1 communicates with the opening OP1 formed in the wiring board WB.
  • the semiconductor chip CHP1 is formed with a flow rate detection unit FDU, wiring (not shown), and a pad PD1 by a normal semiconductor manufacturing process.
  • the diaphragm DF is formed in the position of the back surface facing the flow volume detection part FDU formed in the surface of the semiconductor chip CHP1 by anisotropic etching, for example.
  • a semiconductor chip CHP2 is also mounted on the wiring board WB by an adhesive ADH2.
  • semiconductor elements such as MISFETs, wirings (not shown), pads PD2, and pads PD3 are formed in advance by a normal semiconductor manufacturing process.
  • the pad PD1 formed on the semiconductor chip CHP1 and the wiring WL2 formed on the wiring board WB are connected by the wire W1 (wire bonding).
  • the pad PD2 formed on the semiconductor chip CHP2 is connected to the wiring WL2 by the wire W2
  • the pad PD3 formed on the semiconductor chip CHP2 is connected to the wiring WL3 by the wire W3.
  • the wires W1 to W3 are made of gold wires, for example.
  • the surface of the semiconductor chip CHP1 excluding the flow rate detection unit FDU and its vicinity, the wire W1, the wiring WL2, the wire W2, the entire main surface of the semiconductor chip CHP2, the wire W3 and the wiring WL3 are made of resin MR. Seal (molding process). Specifically, as shown in FIG. 9, the wiring board WB on which the semiconductor chip CHP1 and the semiconductor chip CHP2 are mounted is sandwiched between the upper mold UM and the lower mold BM via the first space.
  • the semiconductor chip CHP1 in which the flow rate detection unit FDU is formed can be fixed with a mold, the position of the semiconductor chip CHP1 is suppressed while suppressing the displacement of the semiconductor chip CHP1.
  • a part and the semiconductor chip CHP2 can be sealed with the resin MR. This is because, according to the flow sensor manufacturing method of the first embodiment, a part of the semiconductor chip CHP1 and the entire region of the semiconductor chip CHP2 can be sealed with the resin MR while suppressing the displacement of each flow sensor. This means that variation in the position of the flow rate detection unit FDU formed in the semiconductor chip CHP1 can be suppressed.
  • the position of the flow rate detection unit FDU that detects the gas flow rate can be matched by each flow rate sensor, it is possible to suppress the performance variation of detecting the gas flow rate in each flow rate sensor. A remarkable effect can be obtained.
  • the flow rate sensor manufacturing method is characterized in that the flow rate detection unit FDU formed in the semiconductor chip CHP1 is surrounded by the second space SP2 isolated from the first space.
  • the wiring board WB on which the semiconductor chip CHP1 is mounted is sandwiched between the mold BM and the upper mold UM.
  • the surface area of other semiconductor chip CHP1 can be sealed, exposing the flow volume detection part FDU currently formed in semiconductor chip CHP1, and its vicinity area.
  • the flow sensor manufacturing method is characterized in that when the wiring board WB mounted with the semiconductor chip CHP1 is sandwiched between the upper mold UM and the lower mold BM, the wiring board WB mounted with the semiconductor chip CHP1.
  • the elastic film LAF is interposed between the upper mold UM and the upper mold UM.
  • the wiring substrate WB on which the semiconductor chip CHP1 is mounted is connected to the upper mold UM.
  • a gap is generated, and the resin MR leaks onto the semiconductor chip CHP1 from this gap.
  • the force applied to the semiconductor chip CHP1 increases when the wiring board WB on which the semiconductor chip CHP1 is mounted is sandwiched between the upper mold UM and the lower mold BM.
  • the semiconductor chip CHP1 may be broken.
  • the wiring board on which the semiconductor chip CHP1 is mounted in order to prevent resin leakage onto the semiconductor chip CHP1 due to the above-described thickness variation of the semiconductor chip CHP1 or breakage of the semiconductor chip CHP1, the wiring board on which the semiconductor chip CHP1 is mounted.
  • a device is devised in which an elastic film LAF is interposed between the WB and the upper mold UM.
  • an elastic film LAF is interposed between the WB and the upper mold UM.
  • the elastic film LAF is soft when the wiring board WB on which the semiconductor chip CHP1 is mounted is sandwiched between the upper mold UM and the lower mold BM.
  • the dimension of the elastic film LAF in the thickness direction changes so as to absorb the thickness of the chip CHP1.
  • a polymer material such as Teflon (registered trademark) or a fluororesin can be used.
  • the wiring board WB on which the semiconductor chip CHP1 and the semiconductor chip CHP2 are mounted is removed from the upper mold UM and the lower mold BM. Thereby, the flow sensor FS1 in the first embodiment can be manufactured.
  • FIG. 11 is a diagram showing a mounting configuration of the flow rate sensor FS2 in the second embodiment, and is a diagram showing a configuration after sealing with resin.
  • FIG. 11A is a plan view showing the mounting configuration of the flow rate sensor FS2 in the second embodiment.
  • 11B is a cross-sectional view taken along the line AA in FIG. 11A
  • FIG. 11C is a cross-sectional view taken along the line BB in FIG. 11A.
  • the mounting configuration of the flow sensor FS2 in the second embodiment is the same as the mounting configuration of the flow sensor FS1 in the first embodiment, except that the airflow control units FCU1 and FCU2 are not provided. Therefore, the flow rate sensor FS2 in the second embodiment also has the first to second feature points and the fourth to sixth feature points described in the first embodiment.
  • the flow rate sensor FS2 in the second embodiment a part of the semiconductor chip CHP1 and the flow rate detection unit FDU formed in the semiconductor chip CHP1 are exposed.
  • the entire semiconductor chip CHP2 is covered with the resin MR (first feature point). That is, in the second embodiment, the region of the semiconductor chip CHP1 other than the flow rate detection unit FDU and the entire region of the semiconductor chip CHP2 are collectively sealed with the resin MR.
  • the sealing with the resin MR can be performed in a state in which the semiconductor chip CHP1 in which the flow rate detection unit FDU is formed is fixed by a mold, and therefore, the semiconductor chip CHP1 can be prevented from being displaced and one of the semiconductor chips CHP1 is suppressed.
  • the part and the semiconductor chip CHP2 can be sealed with the resin MR.
  • a part of the semiconductor chip CHP1 and the entire region of the semiconductor chip CHP2 can be sealed with the resin MR while suppressing the displacement of each flow rate sensor FS2.
  • variation in the position of the flow rate detection unit FDU formed in the semiconductor chip CHP1 can be suppressed.
  • the position of the flow rate detection unit FDU that detects the flow rate of gas can be matched by each flow rate sensor FS2, so that the performance variation of detecting the gas flow rate in each flow rate sensor FS2 is reduced. The remarkable effect which can be suppressed can be acquired.
  • the height of the resin MR (sealing body) on both sides sandwiching the exposed flow rate detection unit FDU is the flow rate.
  • the height of the surface of the semiconductor chip CHP1 including the detection unit FDU is higher (second feature point). That is, the exposed flow rate detection unit FDU is surrounded by the resin MR, and the height of the resin MR surrounding the flow rate detection unit FDU is higher than the height of the flow rate detection unit FDU.
  • the semiconductor device in which the flow rate detection unit FDU is formed can be prevented from colliding with the flow rate detection unit FDU where the component is exposed at the time of mounting and assembling the component.
  • Breakage of the chip CHP1 can be prevented. That is, the height of the resin MR sandwiching the flow rate detection unit FDU is higher than the height of the exposed flow rate detection unit FDU. For this reason, when the component comes into contact, first, it comes into contact with the high resin MR, so that the exposed surface (XY surface) of the semiconductor chip CHP1 including the low flow rate detection unit FDU comes into contact with the component, and the semiconductor It is possible to prevent the chip CHP1 from being damaged.
  • the region has a tapered shape, and the tapered shape of the boundary region orthogonal to the traveling direction (arrow direction, Y direction) of the gas flowing on the flow rate detection unit FDU is the boundary parallel to the traveling direction of the gas. It is steeper than the tapered shape of the region (fourth feature point).
  • the angle of the taper shape TP2 in the direction (X direction) orthogonal to the gas flow of the flow rate detection unit FDU is steeper than the angle of the taper shape TP1 in the direction of gas flow (Y direction) of the flow rate detection unit FDU.
  • the dimensional change of the flow path of the gas flowing in the Y direction can be reduced.
  • difference of the flow measurement by the backflow or turbulent flow of gas can be suppressed.
  • the angle of the tapered shape TP2 in the direction orthogonal to the gas flow direction (X direction) the wall of the gas flow path can be formed, and the gas flow in the X direction can be suppressed. it can.
  • the adhesive ADH1 is applied so as to surround the diaphragm DF formed on the back surface of the semiconductor chip CHP1.
  • the adhesive ADH1 is applied so as to surround the diaphragm DF formed on the back surface of the semiconductor chip CHP1.
  • it is below the diaphragm DF formed on the back surface of the semiconductor chip CHP1.
  • An opening OP1 is formed at the bottom of the groove (fifth feature point).
  • the internal space of the diaphragm DF communicates with the external space of the flow sensor FS2 through the opening OP1 formed in the bottom of the groove of the wiring board WB. become.
  • the pressure in the inner space of the diaphragm DF and the pressure in the outer space of the flow rate sensor FS2 can be equalized, and stress can be suppressed from being applied to the diaphragm DF.
  • FIG. 12 is a diagram showing a mounting configuration of the flow rate sensor FS3 according to the third embodiment, and shows a configuration before sealing with resin.
  • FIG. 12A is a plan view showing a mounting configuration of the flow rate sensor FS3 in the third embodiment.
  • 12B is a cross-sectional view taken along line AA in FIG. 12A, and
  • FIG. 12C is a plan view showing the back surface of the semiconductor chip CHP1.
  • the flow sensor FS3 has a lead frame LF made of, for example, a copper material.
  • the lead frame LF has a chip mounting portion TAB1 and a chip mounting portion TAB2 inside the dam DM constituting the outer frame body.
  • the semiconductor chip CHP1 is mounted on the chip mounting portion TAB1, and the semiconductor chip CHP2 is mounted on the chip mounting portion TAB2.
  • the semiconductor chip CHP1 has a rectangular shape, and a flow rate detection unit FDU is formed substantially at the center.
  • a wiring WL1 connected to the flow rate detection unit FDU is formed on the semiconductor chip CHP1, and the wiring WL1 is connected to a plurality of pads PD1 formed along one side of the semiconductor chip CHP1. That is, the flow rate detection unit FDU and the plurality of pads PD1 are connected by the wiring WL1.
  • These pads PD1 are connected to a lead LD1 formed on the lead frame LF via a wire W1 made of, for example, a gold wire.
  • the lead LD1 formed on the lead frame LF is further connected to a pad PD2 formed on the semiconductor chip CHP2 via a wire W2 made of, for example, a gold wire.
  • an integrated circuit made of semiconductor elements such as MISFET (Metal Insulator Semiconductor Semiconductor Field Field Effect Transistor) and wiring is formed on the semiconductor chip CHP2.
  • MISFET Metal Insulator Semiconductor Semiconductor Field Field Effect Transistor
  • an integrated circuit constituting the CPU 1, the input circuit 2, the output circuit 3 or the memory 4 shown in FIG. 1 is formed.
  • These integrated circuits are connected to the pads PD2 and PD3 that function as external connection terminals.
  • the pad PD3 formed on the semiconductor chip CHP2 is connected to the lead LD2 formed on the lead frame LF via, for example, a wire W3 made of a gold wire.
  • the semiconductor chip CHP1 in which the flow rate detection unit FDU is formed and the semiconductor chip CHP2 in which the control circuit is formed are connected via the leads LD1 formed in the lead frame LF. Recognize.
  • a chip mounting portion TAB1 is formed on the lead frame LF, and the semiconductor chip CHP1 is mounted on the chip mounting portion TAB1.
  • the semiconductor chip CHP1 is bonded to the chip mounting portion TAB1 with an adhesive ADH1.
  • a diaphragm DF thin plate portion
  • a flow rate detection unit FDU is formed on the surface of the semiconductor chip CHP1 facing the diaphragm DF.
  • an opening OP1 is formed at the bottom of the chip mounting portion TAB1 existing below the diaphragm DF.
  • a pad PD1 connected to the flow rate detection unit FDU is formed, and this pad PD1 Is connected to a lead LD1 formed on the lead frame LF via a wire W1.
  • the semiconductor chip CHP2 is also mounted on the lead frame LF, and the semiconductor chip CHP2 is bonded to the chip mounting portion TAB2 with an adhesive ADH2.
  • the pad PD2 formed on the semiconductor chip CHP2 and the lead LD1 formed on the lead frame LF are connected via a wire W2.
  • the pad PD3 formed on the semiconductor chip CHP2 and the lead LD2 formed on the lead frame LF are electrically connected via a wire W3.
  • the adhesive ADH1 that bonds the semiconductor chip CHP1 and the chip mounting portion TAB1, and the adhesive ADH2 that bonds the semiconductor chip CHP2 and the chip mounting portion TAB2, for example, are thermosetting such as epoxy resin and polyurethane resin.
  • a thermoplastic resin such as a resin, a polyimide resin, or an acrylic resin can be used.
  • FIG. 12C is a plan view showing the back surface of the semiconductor chip CHP1.
  • a diaphragm DF is formed on the back surface of the semiconductor chip CHP1, and an adhesive ADH1 is applied so as to surround the diaphragm DF.
  • FIG. 12C shows an example in which the adhesive ADH1 is applied so as to surround the diaphragm DF in a quadrangular shape.
  • the adhesive ADH1 may be applied.
  • the mounting configuration of the flow rate sensor FS3 before sealing with resin is configured as described above, and the mounting configuration of the flow rate sensor FS3 after sealing with resin is described below. Will be described.
  • FIG. 13 is a diagram illustrating a mounting configuration of the flow rate sensor FS3 according to the third embodiment, and is a diagram illustrating a configuration after sealing with resin.
  • FIG. 13A is a plan view showing a mounting configuration of the flow sensor FS3 in the third embodiment.
  • 13B is a cross-sectional view taken along the line AA in FIG. 13A
  • FIG. 13C is a cross-sectional view taken along the line BB in FIG. 13A.
  • the flow rate sensor FS3 in the third embodiment a part of the semiconductor chip CHP1 and the semiconductor chip CHP2 are exposed in a state where the flow rate detection unit FDU formed in the semiconductor chip CHP1 is exposed.
  • the entire structure is covered with the resin MR (first feature point). That is, in the third embodiment, the region of the semiconductor chip CHP1 other than the flow rate detection unit FDU and the entire region of the semiconductor chip CHP2 are collectively sealed with the resin MR.
  • the sealing with the resin MR can be performed in a state in which the semiconductor chip CHP1 in which the flow rate detection unit FDU is formed is fixed by a mold, and therefore, the semiconductor chip CHP1 can be prevented from being displaced and one of the semiconductor chips CHP1 is suppressed.
  • the part and the semiconductor chip CHP2 can be sealed with the resin MR.
  • a part of the semiconductor chip CHP1 and the entire region of the semiconductor chip CHP2 can be sealed with the resin MR while suppressing the displacement of each flow rate sensor FS3.
  • variation in the position of the flow rate detection unit FDU formed in the semiconductor chip CHP1 can be suppressed.
  • the position of the flow rate detection unit FDU that detects the gas flow rate can be matched by each flow rate sensor FS3. The remarkable effect which can be suppressed can be acquired.
  • the height of the resin MR (sealing body) on both sides sandwiching the exposed flow rate detection unit FDU is the flow rate.
  • the height of the surface of the semiconductor chip CHP1 including the detection unit FDU is higher (second feature point). That is, the exposed flow rate detection unit FDU is surrounded by the resin MR, and the height of the resin MR surrounding the flow rate detection unit FDU is higher than the height of the flow rate detection unit FDU.
  • the semiconductor device in which the flow rate detection unit FDU is formed can be prevented from colliding with the flow rate detection unit FDU where the component is exposed at the time of mounting and assembling the component.
  • Breakage of the chip CHP1 can be prevented. That is, the height of the resin MR sandwiching the flow rate detection unit FDU is higher than the height of the exposed flow rate detection unit FDU. For this reason, when the component comes into contact, first, it comes into contact with the high resin MR, so that the exposed surface (XY surface) of the semiconductor chip CHP1 including the low flow rate detection unit FDU comes into contact with the component, and the semiconductor It is possible to prevent the chip CHP1 from being damaged.
  • the traveling direction of the gas flowing in the flow rate detection unit FDU with the exposed flow rate detection unit FDU (arrow direction, A pair of airflow control units FCU1 and FCU2 having a long shape in a direction parallel to the (Y direction) is integrally formed with the resin MR (sealing body) (third feature point).
  • a pair of airflow control units FCU1 and FCU2 form passages on both sides of the gas flowing through the upper part of the flow rate detection unit FDU.
  • the pair of air flow control units FCU1 and FCU2 are formed with high accuracy by being sandwiched by a mold having high dimensional accuracy integrally with the resin MR.
  • the gas flow rate can be accurately measured without disturbing the gas flow due to the dimensional accuracy of the pair of air flow control units FCU1 and FCU2. .
  • the pair of airflow control units FCU1 and FCU2 form passages on both sides of the gas flowing through the upper part of the flow rate detection unit FDU. For this reason, gas can be flowed to the upper part of flow volume detection part FDU in the state where the flow path size of gas was narrowed down.
  • the flow rate sensor FS3 in the third embodiment it is possible to suppress a decrease in the detection sensitivity of the gas flow rate even when the flow rate of the flowing gas is small.
  • the region has a tapered shape, and the tapered shape of the boundary region orthogonal to the traveling direction (arrow direction, Y direction) of the gas flowing on the flow rate detection unit FDU is the boundary parallel to the traveling direction of the gas. It is steeper than the tapered shape of the region (fourth feature point).
  • the angle of the taper shape TP2 in the direction (X direction) orthogonal to the gas flow of the flow rate detection unit FDU is steeper than the angle of the taper shape TP1 in the direction of gas flow (Y direction) of the flow rate detection unit FDU.
  • the dimensional change of the flow path of the gas flowing in the Y direction can be reduced.
  • difference of the flow measurement by the backflow or turbulent flow of gas can be suppressed.
  • the angle of the tapered shape TP2 in the direction orthogonal to the gas flow direction (X direction) the wall of the gas flow path can be formed, and the gas flow in the X direction can be suppressed. it can.
  • the flow rate sensor FS3 in the third embodiment also has the fifth feature point and the sixth feature point.
  • FIG. 13 (b) and FIG. 13 (c). ) Will be described.
  • 13B is a cross-sectional view taken along the line AA in FIG. 13A
  • FIG. 13C is a cross-sectional view taken along the line BB in FIG. 13A.
  • a chip mounting portion TAB1 is formed on the lead frame LF, and the semiconductor chip CHP1 is bonded to the chip mounting portion TAB1 with an adhesive ADH1.
  • a diaphragm DF is formed on the back surface of the semiconductor chip CHP1, and an opening OP1 is formed at the bottom of the chip mounting portion TAB1 below the diaphragm DF.
  • the back surface of the lead frame LF is covered with the resin MR, but the opening OP2 is formed in the resin MR formed on the back surface of the chip mounting portion TAB1 among the back surface of the lead frame LF.
  • the opening OP1 formed in the chip mounting portion TAB1 and the opening OP2 formed in the resin MR are in communication with each other, and the internal space of the diaphragm DF is defined through the opening OP1 and the opening OP2. It is connected to the external space of the flow sensor FS3.
  • the cross-sectional area of the opening OP1 is configured to be smaller than the cross-sectional area of the opening OP2.
  • the sectional area of the opening OP1 is configured to be larger than the sectional area of the opening OP2.
  • a flow rate detection unit FDU is formed on the surface of the semiconductor chip CHP1 facing the diaphragm DF, and further, a pad PD1 connected to the flow rate detection unit FDU is formed.
  • the pad PD1 is connected to a lead LD1 formed on the lead frame LF via a wire W1
  • the lead LD1 is formed on a semiconductor chip CHP2 mounted on the chip mounting portion TAB2 via an adhesive ADH2.
  • the pad PD2 is connected with the wire W2.
  • the pad PD3 formed on the semiconductor chip CHP2 is connected to the lead LD2 formed on the lead frame LF via the wire W3.
  • a part of the semiconductor chip CHP1, which is another region (including the pad PD1), the wire W1, the lead LD1, A part of the wire W2, the semiconductor chip CHP2, the wire W3, and the lead LD2 are collectively sealed with the resin MR.
  • the exposed boundary region between the flow rate detection unit FDU and the resin MR has a tapered shape TP2, and the pair of air flow control units FCU1 and FCU2 are formed integrally with the resin MR so as to sandwich the flow rate detection unit FDU.
  • a chip mounting portion TAB1 is formed on the lead frame LF, and the semiconductor chip CHP1 is bonded to the chip mounting portion TAB1 with an adhesive ADH1.
  • a diaphragm DF is formed on the back surface of the semiconductor chip CHP1, an opening OP1 is formed at the bottom of the chip mounting portion TAB1 below the diaphragm DF, and the resin MR covers the back surface of the chip mounting portion TAB1.
  • An opening OP2 is formed in the opening.
  • the opening OP1 formed in the chip mounting portion TAB1 and the opening OP2 formed in the resin MR are in communication with each other, and the internal space of the diaphragm DF is defined through the opening OP1 and the opening OP2.
  • the cross-sectional area of the opening OP1 is configured to be smaller than the cross-sectional area of the opening OP2.
  • the sectional area of the opening OP1 is configured to be larger than the sectional area of the opening OP2.
  • a flow rate detection unit FDU is formed on the surface of the semiconductor chip CHP1 facing the diaphragm DF, and a resin MR is formed so as to surround the periphery of the semiconductor chip CHP1.
  • the boundary region between the flow rate detection unit FDU and the resin MR has a tapered shape TP1, and the angle of the tapered shape TP1 is gentler than the angle of the tapered shape TP2 shown in FIG.
  • the adhesive ADH1 is provided so as to surround the diaphragm DF formed on the back surface of the semiconductor chip CHP1. It is premised on taking the composition to apply. In order to avoid inconveniences due to this configuration, as shown in FIGS. 13B and 13C, the bottom of the chip mounting portion TAB1 below the diaphragm DF formed on the back surface of the semiconductor chip CHP1 is formed. The opening OP1 is formed, and the opening OP2 is provided in the resin MR that covers the back surface of the chip mounting portion TAB1 (fifth feature point).
  • the internal space of the diaphragm DF flows through the opening OP1 formed at the bottom of the chip mounting portion TAB1 and the opening OP2 formed in the resin MR. It communicates with the external space of the sensor FS3.
  • the pressure in the inner space of the diaphragm DF and the pressure in the outer space of the flow sensor FS3 can be made equal, and the stress can be suppressed from being applied to the diaphragm DF.
  • the semiconductor chip CHP1 and the lead LD1 are connected by wires W2 and W3 (sixth feature point).
  • FIG. 14 is a plan view showing a mounting configuration of the flow sensor FS3 after the dam DM is removed. As shown in FIG. 14, it can be seen that by cutting the dam DM, a plurality of electrical signals can be independently taken out from the plurality of leads LD2.
  • the flow sensor FS3 according to the third embodiment is configured as described above, and the manufacturing method thereof will be described below with reference to FIGS. 15 to 19 show the manufacturing process in the cross section taken along the line AA in FIG.
  • a lead frame LF made of a copper material is prepared.
  • a chip mounting portion TAB1, a chip mounting portion TAB2, a lead LD1, and a lead LD2 are integrally formed, and an opening OP1 is formed at the bottom of the chip mounting portion TAB1.
  • the semiconductor chip CHP1 is mounted on the chip mounting portion TAB1, and the semiconductor chip CHP2 is mounted on the chip mounting portion TAB2.
  • the semiconductor chip CHP1 is connected to the chip mounting portion TAB1 formed on the lead frame LF with an adhesive ADH1.
  • the semiconductor chip CHP1 is mounted on the chip mounting portion TAB1 so that the diaphragm DF formed on the semiconductor chip CHP1 communicates with the opening OP1 formed at the bottom of the chip mounting portion TAB1.
  • the semiconductor chip CHP1 is formed with a flow rate detection unit FDU, wiring (not shown), and a pad PD1 by a normal semiconductor manufacturing process.
  • the diaphragm DF is formed in the position of the back surface facing the flow volume detection part FDU formed in the surface of the semiconductor chip CHP1 by anisotropic etching, for example.
  • a semiconductor chip CHP2 is also mounted on the chip mounting portion TAB2 formed on the lead frame LF by an adhesive ADH2.
  • semiconductor elements such as MISFETs, wirings (not shown), pads PD2, and pads PD3 are formed in advance by a normal semiconductor manufacturing process.
  • the pad PD1 formed on the semiconductor chip CHP1 and the lead LD1 formed on the lead frame LF are connected by a wire W1 (wire bonding).
  • the pad PD2 formed on the semiconductor chip CHP2 is connected to the lead LD1 and the wire W2
  • the pad PD3 formed on the semiconductor chip CHP2 is connected to the lead LD2 and the wire W3.
  • the wires W1 to W3 are made of gold wires, for example.
  • the lead frame LF on which the semiconductor chip CHP1 and the semiconductor chip CHP2 are mounted is sandwiched between the upper mold UM and the lower mold BM via the first space.
  • the resin MR is formed by pouring the resin MR into the first space under heating, the surface of the semiconductor chip CHP1 excluding the flow rate detection unit FDU and its vicinity, the wires W1, the leads LD1, the wires W2, the entire main surface of the semiconductor chip CHP2, A part of the wire W3 and the lead LD2 is sealed with the resin MR.
  • the inner space of the diaphragm DF is separated from the first space by the adhesive ADH1, so that the diaphragm DF can be filled even when the first space is filled with the resin MR.
  • the resin MR can be prevented from entering the internal space.
  • the semiconductor chip CHP1 in which the flow rate detection unit FDU is formed can be fixed with a mold, it is possible to suppress the positional deviation of the semiconductor chip CHP1 and prevent the semiconductor chip CHP1 from being displaced.
  • a part and the semiconductor chip CHP2 can be sealed with the resin MR. This is because, according to the method of manufacturing the flow sensor in the third embodiment, a part of the semiconductor chip CHP1 and the entire region of the semiconductor chip CHP2 can be sealed with the resin MR while suppressing the displacement of each flow sensor. This means that variation in the position of the flow rate detection unit FDU formed in the semiconductor chip CHP1 can be suppressed.
  • the position of the flow rate detection unit FDU that detects the gas flow rate can be matched by each flow rate sensor, it is possible to suppress the performance variation of detecting the gas flow rate in each flow rate sensor. A remarkable effect can be obtained.
  • the flow sensor manufacturing method according to the third embodiment is characterized in that the flow rate detection unit FDU formed in the semiconductor chip CHP1 is surrounded by the second space SP2 isolated from the first space.
  • the lead frame LF on which the semiconductor chip CHP1 is mounted is sandwiched between the mold BM and the upper mold UM.
  • the surface area of the other semiconductor chip CHP1 can be sealed while exposing the flow rate detection unit FDU formed in the semiconductor chip CHP1 and the vicinity thereof.
  • the flow rate sensor manufacturing method is characterized in that when the lead frame LF mounted with the semiconductor chip CHP1 is sandwiched between the upper mold UM and the lower mold BM, the lead frame LF mounted with the semiconductor chip CHP1.
  • the elastic film LAF is interposed between the upper mold UM and the upper mold UM.
  • the lead frame LF on which the semiconductor chip CHP1 is mounted is connected to the upper mold UM.
  • a gap is generated, and the resin MR leaks onto the semiconductor chip CHP1 from this gap.
  • the force applied to the semiconductor chip CHP1 increases when the lead frame LF on which the semiconductor chip CHP1 is mounted is sandwiched between the upper mold UM and the lower mold BM.
  • the semiconductor chip CHP1 may be broken.
  • the lead frame on which the semiconductor chip CHP1 is mounted is prevented.
  • a device is devised in which an elastic film LAF is interposed between the LF and the upper mold UM.
  • an elastic film LAF is interposed between the LF and the upper mold UM.
  • the elastic film LAF is soft when the lead frame LF mounting the semiconductor chip CHP1 is sandwiched between the upper mold UM and the lower mold BM.
  • the dimension in the thickness direction of the elastic film LAF changes so as to absorb the thickness of the chip CHP1.
  • a polymer material such as Teflon (registered trademark) or a fluororesin can be used.
  • the resin MR also flows into the back side of the lead frame LF. Therefore, since the opening OP1 is formed at the bottom of the chip mounting portion TAB1, there is a concern that the resin MR flows into the internal space of the diaphragm DF from the opening OP1. Therefore, in the third embodiment, the shape of the lower mold BM that sandwiches the lead frame LF is devised. Specifically, as shown in FIG. 18, a protruding insert IP1 is formed in the lower mold BM, and is formed in the lower mold BM when the lead frame LF is sandwiched between the upper mold UM and the lower mold BM.
  • the protruding insertion piece IP1 is inserted into an opening OP1 formed at the bottom of the chip mounting portion TAB1.
  • the insert piece IP1 is inserted into the opening OP1 without a gap, and therefore, the resin MR can be prevented from entering the inner space of the diaphragm DF from the opening OP1.
  • the protruding insertion piece IP1 is formed in the lower mold BM, and this insertion piece IP1 is inserted into the opening OP1 formed at the bottom of the chip mounting portion TAB1 at the time of resin sealing. There is a feature in the point to do.
  • the feature of the third embodiment is that the shape of the insert piece IP1 is devised.
  • the insert piece IP1 includes an insertion portion that is inserted into the opening OP1 and a pedestal portion that supports the insertion portion.
  • the cross-sectional area is large.
  • the insert piece IP1 has a structure in which a step portion is provided between the insertion portion and the pedestal portion, and the step portion is in close contact with the bottom surface of the chip mounting portion TAB1.
  • the insert piece IP1 in this way, the insertion portion is inserted into the opening portion OP1, and thus the diameter of the insertion portion of the insertion piece IP1 is slightly smaller than the diameter of the opening portion OP1. It has become. Therefore, when the insertion piece IP1 is configured only from the insertion portion, even if the insertion portion of the insertion piece IP1 is inserted into the opening OP1, there is a slight gap between the inserted insertion portion and the opening OP1. Conceivable. In this case, the resin MR may enter the inner space of the diaphragm DF from the gap.
  • the insertion part IP1 is configured to form the insertion part on the base part having a larger cross-sectional area than the insertion part.
  • the insertion portion of the insertion piece IP1 is inserted into the opening OP1, and the pedestal portion of the insertion piece IP1 comes into close contact with the bottom surface of the chip mounting portion TAB1.
  • the pedestal part is firmly pressed against the back surface of the chip mounting part TAB1, so that the resin MR enters the opening OP1. It can be prevented.
  • the insertion piece IP1 is configured to provide the insertion portion on the pedestal portion having a larger cross-sectional area than the insertion portion, and therefore the resin MR reaches the opening OP1 by the pedestal portion.
  • the combination of the fact that the step portion formed between the pedestal portion and the insertion portion is pressed against the chip mounting portion TAB1 makes the resin MR the internal space of the diaphragm DF through the opening OP1. It is possible to effectively prevent intrusion.
  • the lead frame LF on which the semiconductor chip CHP1 and the semiconductor chip CHP2 are mounted is removed from the upper mold UM and the lower mold BM.
  • the flow sensor FS3 in the third embodiment can be manufactured.
  • an opening OP1 is formed on the bottom surface of the chip mounting portion TAB1.
  • an opening OP2 communicating with the opening OP1 is formed in the resin MR.
  • the opening OP2 is produced as a result of forming a pedestal on the insert piece IP1, and the cross-sectional area of the opening OP2 is larger than the cross-sectional area of the opening OP1.
  • the internal space of the diaphragm DF flows through the opening OP1 formed at the bottom of the chip mounting portion TAB1 and the opening OP2 formed in the resin MR. It communicates with the external space of the sensor FS3.
  • the pressure in the inner space of the diaphragm DF and the pressure in the outer space of the flow sensor FS3 can be made equal, and the stress can be suppressed from being applied to the diaphragm DF.
  • FIG. 20 is a diagram illustrating a mounting configuration of the flow rate sensor FS4 in the fourth embodiment, and is a diagram illustrating a configuration after sealing with resin.
  • FIG. 20A is a plan view showing a mounting configuration of the flow rate sensor FS4 in the fourth embodiment.
  • 20B is a cross-sectional view taken along line AA in FIG. 20A
  • FIG. 20C is a cross-sectional view taken along line BB in FIG. 20A.
  • the mounting configuration of the flow sensor FS4 in the fourth embodiment is the same as the mounting configuration of the flow sensor FS3 in the third embodiment, except that the airflow control units FCU1 and FCU2 are not provided. Therefore, the flow rate sensor FS4 according to the fourth embodiment also has the first to second feature points and the fourth to sixth feature points described in the third embodiment.
  • the flow rate sensor FS4 according to the fourth embodiment, as shown in FIG. 20A, a part of the semiconductor chip CHP1 and the flow rate detection unit FDU formed in the semiconductor chip CHP1 are exposed.
  • the entire semiconductor chip CHP2 is covered with the resin MR (first feature point). That is, in the fourth embodiment, the region of the semiconductor chip CHP1 other than the flow rate detection unit FDU and the entire region of the semiconductor chip CHP2 are collectively sealed with the resin MR.
  • the sealing with the resin MR can be performed in a state in which the semiconductor chip CHP1 in which the flow rate detection unit FDU is formed is fixed by a mold, and therefore, the semiconductor chip CHP1 can be prevented from being displaced and one of the semiconductor chips CHP1 is suppressed.
  • the part and the semiconductor chip CHP2 can be sealed with the resin MR.
  • a part of the semiconductor chip CHP1 and the entire region of the semiconductor chip CHP2 can be sealed with the resin MR while suppressing the displacement of each flow rate sensor FS4.
  • variation in the position of the flow rate detection unit FDU formed in the semiconductor chip CHP1 can be suppressed.
  • the position of the flow rate detection unit FDU that detects the flow rate of gas can be matched by each flow rate sensor FS4. Therefore, there is a performance variation in detecting the gas flow rate in each flow rate sensor FS4. The remarkable effect which can be suppressed can be acquired.
  • the height of the resin MR (sealing body) on both sides sandwiching the exposed flow rate detection unit FDU is the flow rate.
  • the height of the surface of the semiconductor chip CHP1 including the detection unit FDU is higher (second feature point). That is, the exposed flow rate detection unit FDU is surrounded by the resin MR, and the height of the resin MR surrounding the flow rate detection unit FDU is higher than the height of the flow rate detection unit FDU.
  • the semiconductor device in which the flow rate detection unit FDU is formed can be prevented from colliding with the flow rate detection unit FDU where the component is exposed at the time of mounting and assembly of the component.
  • Breakage of the chip CHP1 can be prevented. That is, the height of the resin MR sandwiching the flow rate detection unit FDU is higher than the height of the exposed flow rate detection unit FDU. For this reason, when the component comes into contact, first, it comes into contact with the high resin MR, so that the exposed surface (XY surface) of the semiconductor chip CHP1 including the low flow rate detection unit FDU comes into contact with the component, and the semiconductor It is possible to prevent the chip CHP1 from being damaged.
  • the region has a tapered shape, and the tapered shape of the boundary region orthogonal to the traveling direction (arrow direction, Y direction) of the gas flowing on the flow rate detection unit FDU is the boundary parallel to the traveling direction of the gas. It is steeper than the tapered shape of the region (fourth feature point).
  • the angle of the taper shape TP2 in the direction (X direction) orthogonal to the gas flow of the flow rate detection unit FDU is steeper than the angle of the taper shape TP1 in the direction of gas flow (Y direction) of the flow rate detection unit FDU.
  • the angle of the tapered shape TP1 in the gas flow direction (Y direction) is steeper than the angle of the taper shape TP1 in the direction of gas flow (Y direction) of the flow rate detection unit FDU.
  • the adhesive ADH1 is applied so as to surround the diaphragm DF formed on the back surface of the semiconductor chip CHP1. It is premised on taking the composition to do.
  • the bottom of the chip mounting portion TAB1 below the diaphragm DF formed on the back surface of the semiconductor chip CHP1 is formed.
  • the opening OP1 is formed, and the opening OP2 is provided in the resin MR that covers the back surface of the chip mounting portion TAB1 (fifth feature point).
  • the internal space of the diaphragm DF flows through the opening OP1 formed in the bottom of the chip mounting portion TAB1 and the opening OP2 formed in the resin MR. It communicates with the external space of the sensor FS4.
  • the pressure in the inner space of the diaphragm DF and the pressure in the outer space of the flow rate sensor FS4 can be made equal, and stress can be suppressed from being applied to the diaphragm DF.
  • the semiconductor chip CHP1 and the lead LD1 are connected by wires W2 and W3 (sixth feature point).
  • FIG. 21 is a plan view showing a mounting configuration of the flow sensor FS4 after the dam DM is removed. As shown in FIG. 21, by cutting the dam DM, it can be seen that a plurality of electrical signals can be taken out independently from the plurality of leads LD2.
  • the flow rate sensors FS1 to FS4 in the first to fourth embodiments are configured to include the semiconductor chip CHP1 in which the flow rate detection unit FDU is formed and the semiconductor chip CHP2 in which the control circuit is formed. Now, a flow rate sensor in which a flow rate detection unit and a control circuit are formed on one semiconductor chip will be described.
  • FIG. 22 is a diagram illustrating a mounting configuration of the flow sensor FS5 according to the fifth embodiment, and is a diagram illustrating a configuration before sealing with resin.
  • FIG. 22A is a plan view showing a mounting configuration of the flow rate sensor FS5 in the fifth embodiment.
  • 22B is a cross-sectional view taken along the line AA in FIG. 22A
  • FIG. 22C is a cross-sectional view taken along the line BB in FIG. 22A.
  • FIG. 22D is a plan view showing the back surface of the semiconductor chip CHP1.
  • the flow sensor FS5 in the fifth embodiment has a lead frame LF made of, for example, a copper material.
  • the lead frame LF has a chip mounting portion TAB1 inside the dam DM constituting the outer frame body.
  • the semiconductor chip CHP1 is mounted on the chip mounting portion TAB1.
  • the semiconductor chip CHP1 has a rectangular shape, and a flow rate detection unit FDU is formed substantially at the center.
  • a wiring WL1A connected to the flow rate detection unit FDU is formed on the semiconductor chip CHP1, and the wiring WL1A is connected to the control unit CU formed on the semiconductor chip CHP1.
  • the control unit CU an integrated circuit composed of semiconductor elements such as MISFETs (Metal Insulators, Semiconductors, Fields, Effects, and Transistors) and wirings is formed. Specifically, an integrated circuit constituting the CPU 1, the input circuit 2, the output circuit 3 or the memory 4 shown in FIG. 1 is formed.
  • the control unit CU is connected to a plurality of pads PD1 and pads PD2 formed along the long side of the semiconductor chip CHP1 by wirings WL1B. That is, the flow rate detection unit FDU and the control unit CU are connected by the wiring WL1A, and the control unit CU is connected by the wiring WL1B to the pad PD1 and the pad PD2.
  • the pad PD1 is connected to a lead LD1 formed on the lead frame LF via, for example, a wire W1 made of a gold wire.
  • the pad PD2 is connected to a lead LD2 formed on the lead frame LF via, for example, a wire W2 made of a gold wire.
  • the lead LD1 and the lead LD2 are arranged so as to extend in the X direction orthogonal to the Y direction in which the gas flows, and have a function of performing input / output with an external circuit.
  • protruding leads PLD are formed along the Y direction of the lead frame LF.
  • the protruding lead PLD is connected to the chip mounting portion TAB1, but is not connected to the pads PD1 and PD2 formed on the semiconductor chip CHP1. That is, the protruding lead PLD is different from the leads LD1 and LD2 that function as the input / output terminals described above.
  • the semiconductor chip CHP1 is mounted on the chip mounting portion TAB1 so that the long side of the rectangular semiconductor chip CHP1 is parallel to the gas flow direction (arrow direction, Y direction). ing.
  • a plurality of pads PD1 and PD2 are arranged along the long side direction on the long side of the semiconductor chip CHP1.
  • Each of the plurality of pads PD1 and each of the plurality of leads LD1 are connected by a plurality of wires W1 arranged so as to straddle the long side of the semiconductor chip CHP1.
  • each of the plurality of pads PD2 and each of the plurality of leads LD2 are connected by a plurality of wires W2 arranged so as to straddle the long side of the semiconductor chip CHP1.
  • the semiconductor chip CHP1 is arranged along the long side of the rectangular semiconductor chip CHP1, compared to the case where the plurality of pads PD1 and PD2 are arranged in the short side direction of the semiconductor chip CHP1, Many pads PD1 and PD2 can be formed on the semiconductor chip CHP1.
  • the semiconductor chip CHP1 is arranged by arranging a large number of pads PD1 and PD2 in the long side direction. The upper area can be used effectively.
  • a chip mounting portion TAB1 is formed on the lead frame LF, and the semiconductor chip CHP1 is mounted on the chip mounting portion TAB1.
  • the semiconductor chip CHP1 is bonded to the chip mounting portion TAB1 with an adhesive ADH1.
  • a diaphragm DF thin plate portion
  • a flow rate detection unit FDU is formed on the surface of the semiconductor chip CHP1 facing the diaphragm DF.
  • an opening OP1 is formed at the bottom of the chip mounting portion TAB1 existing below the diaphragm DF.
  • a pad PD1 and a pad PD2 are formed on the surface (upper surface) of the semiconductor chip CHP1, and the pad PD1 is formed in the lead frame LF. Is connected to the lead LD1 formed on the wire W1. Similarly, the pad PD2 is connected to a lead LD2 formed on the lead frame LF via a wire W2.
  • the chip mounting portion TAB1 and the protruding lead PLD are formed on the lead frame LF, and the chip mounting portion TAB1 and the protruding lead PLD are integrally formed.
  • the semiconductor chip CHP1 is bonded by an adhesive ADH1.
  • a diaphragm DF thin plate portion
  • a flow rate detection unit FDU is formed on the surface of the semiconductor chip CHP1 facing the diaphragm DF.
  • an opening OP1 is formed at the bottom of the chip mounting portion TAB1 existing below the diaphragm DF.
  • a control unit CU is formed on the surface of the semiconductor chip CHP1 so as to be aligned with the flow rate detection unit FDU.
  • thermosetting resin such as an epoxy resin or a polyurethane resin
  • thermoplastic resin such as a polyimide resin or an acrylic resin
  • FIG. 22D is a plan view showing the back surface of the semiconductor chip CHP1.
  • a diaphragm DF is formed on the back surface of the semiconductor chip CHP1, and an adhesive ADH1 is applied so as to surround the diaphragm DF.
  • FIG. 22C shows an example in which the adhesive ADH1 is applied so as to surround the diaphragm DF in a quadrangular shape.
  • the adhesive ADH1 may be applied.
  • the mounting configuration of the flow rate sensor FS5 before sealing with resin is configured as described above, and the mounting configuration of the flow rate sensor FS5 after sealing with resin is described below. Will be described.
  • FIG. 23 is a diagram illustrating a mounting configuration of the flow rate sensor FS5 according to the fifth embodiment, and is a diagram illustrating a configuration after sealing with resin.
  • FIG. 23A is a plan view showing the mounting configuration of the flow rate sensor FS5 in the fifth embodiment.
  • 23B is a cross-sectional view taken along line AA in FIG. 23A
  • FIG. 23C is a cross-sectional view taken along line BB in FIG.
  • the flow rate sensor FS5 in the fifth embodiment a part of the semiconductor chip CHP1 and the semiconductor chip CHP2 are exposed with the flow rate detection unit FDU formed in the semiconductor chip CHP1 exposed.
  • the entire structure is covered with the resin MR (first feature point). That is, in the fifth embodiment, the region of the semiconductor chip CHP1 other than the flow rate detection unit FDU and the entire region of the semiconductor chip CHP2 are collectively sealed with the resin MR.
  • the sealing with the resin MR can be performed in a state in which the semiconductor chip CHP1 in which the flow rate detection unit FDU is formed is fixed by a mold, and therefore, the semiconductor chip CHP1 can be prevented from being displaced and one of the semiconductor chips CHP1 is suppressed.
  • the part and the semiconductor chip CHP2 can be sealed with the resin MR.
  • a part of the semiconductor chip CHP1 and the entire region of the semiconductor chip CHP2 can be sealed with the resin MR while suppressing the displacement of each flow rate sensor FS5.
  • variation in the position of the flow rate detection unit FDU formed in the semiconductor chip CHP1 can be suppressed.
  • the position of the flow rate detection unit FDU that detects the flow rate of gas can be matched by each flow rate sensor FS5, so that there is performance variation in detecting the gas flow rate in each flow rate sensor FS5. The remarkable effect which can be suppressed can be acquired.
  • the height of the resin MR (sealing body) on both sides sandwiching the exposed flow rate detection unit FDU is the flow rate.
  • the height of the surface of the semiconductor chip CHP1 including the detection unit FDU is higher (second feature point). That is, the exposed flow rate detection unit FDU is surrounded by the resin MR, and the height of the resin MR surrounding the flow rate detection unit FDU is higher than the height of the flow rate detection unit FDU.
  • Breakage of the chip CHP1 can be prevented. That is, the height of the resin MR sandwiching the flow rate detection unit FDU is higher than the height of the exposed flow rate detection unit FDU. For this reason, when the component comes into contact, first, it comes into contact with the high resin MR, so that the exposed surface (XY surface) of the semiconductor chip CHP1 including the low flow rate detection unit FDU comes into contact with the component, and the semiconductor It is possible to prevent the chip CHP1 from being damaged.
  • the traveling direction of the gas flowing in the flow rate detection unit FDU (arrow direction, across the exposed flow rate detection unit FDU)
  • a pair of airflow control units FCU1 and FCU2 having a long shape in a direction parallel to the (Y direction) is integrally formed with the resin MR (sealing body) (third feature point).
  • a pair of airflow control units FCU1 and FCU2 form passages on both sides of the gas flowing through the upper part of the flow rate detection unit FDU.
  • the pair of air flow control units FCU1 and FCU2 are formed with high accuracy by being sandwiched by a mold having high dimensional accuracy integrally with the resin MR.
  • the gas flow rate can be accurately measured without the gas flow being disturbed by the dimensional accuracy of the pair of air flow control units FCU1 and FCU2. .
  • the pair of airflow control units FCU1 and FCU2 form the passages on both sides of the gas flowing through the upper part of the flow rate detection unit FDU. For this reason, gas can be flowed to the upper part of flow volume detection part FDU in the state where the flow path size of gas was narrowed down.
  • the region has a tapered shape, and the tapered shape of the boundary region orthogonal to the traveling direction (arrow direction, Y direction) of the gas flowing on the flow rate detection unit FDU is the boundary parallel to the traveling direction of the gas. It is steeper than the tapered shape of the region (fourth feature point).
  • the angle of the taper shape TP2 in the direction (X direction) orthogonal to the gas flow of the flow rate detection unit FDU is steeper than the angle of the taper shape TP1 in the direction of gas flow (Y direction) of the flow rate detection unit FDU.
  • the dimensional change of the flow path of the gas flowing in the Y direction can be reduced.
  • difference of the flow measurement by the backflow or turbulent flow of gas can be suppressed.
  • the angle of the tapered shape TP2 in the direction orthogonal to the gas flow direction (X direction) the wall of the gas flow path can be formed, and the gas flow in the X direction can be suppressed. it can.
  • FIG. 23B is a cross-sectional view taken along the line AA in FIG. 23A
  • FIG. 23C is a cross-sectional view taken along the line BB in FIG.
  • a chip mounting portion TAB1 is formed on the lead frame LF, and the semiconductor chip CHP1 is bonded to the chip mounting portion TAB1 with an adhesive ADH1.
  • a diaphragm DF is formed on the back surface of the semiconductor chip CHP1, and an opening OP1 is formed at the bottom of the chip mounting portion TAB1 below the diaphragm DF.
  • the back surface of the lead frame LF is covered with the resin MR, but the opening OP2 is formed in the resin MR formed on the back surface of the chip mounting portion TAB1 among the back surface of the lead frame LF.
  • the opening OP1 formed in the chip mounting portion TAB1 and the opening OP2 formed in the resin MR are in communication with each other, and the internal space of the diaphragm DF is defined through the opening OP1 and the opening OP2. It is connected to the external space of the flow sensor FS3.
  • the cross-sectional area of the opening OP1 is configured to be smaller than the cross-sectional area of the opening OP2.
  • the sectional area of the opening OP1 is configured to be larger than the sectional area of the opening OP2.
  • a flow rate detection unit FDU is formed on the surface of the semiconductor chip CHP1 facing the diaphragm DF, and further, a pad PD1 and a pad PD2 are formed.
  • the pad PD1 is connected to the lead LD1 formed on the lead frame LF via a wire W1
  • the pad PD2 is connected to the lead LD2 formed on the lead frame LF via a wire W2.
  • a part of the semiconductor chip CHP1, which is another region (including the pad PD1 and the pad PD2), the wire W1, the flow rate detection unit FDU and the vicinity thereof are exposed.
  • a part of the lead LD1, the wire W2, and the lead LD2 is collectively sealed with the resin MR.
  • the exposed boundary region between the flow rate detection unit FDU and the resin MR has a tapered shape TP2, and the pair of air flow control units FCU1 and FCU2 are formed integrally with the resin MR so as to sandwich the flow rate detection unit FDU. Has been.
  • a chip mounting portion TAB1 is formed on the lead frame LF, and the semiconductor chip CHP1 is bonded to the chip mounting portion TAB1 by an adhesive ADH1.
  • a diaphragm DF is formed on the back surface of the semiconductor chip CHP1, an opening OP1 is formed at the bottom of the chip mounting portion TAB1 below the diaphragm DF, and the resin MR covers the back surface of the chip mounting portion TAB1.
  • An opening OP2 is formed in the opening.
  • the opening OP1 formed in the chip mounting portion TAB1 and the opening OP2 formed in the resin MR are in communication with each other, and the internal space of the diaphragm DF is defined through the opening OP1 and the opening OP2.
  • the cross-sectional area of the opening OP1 is configured to be smaller than the cross-sectional area of the opening OP2.
  • the sectional area of the opening OP1 is configured to be larger than the sectional area of the opening OP2.
  • a flow rate detection unit FDU and a control unit CU are formed on the surface of the semiconductor chip CHP1 facing the diaphragm DF, and a resin MR is formed so as to surround the semiconductor chip CHP1.
  • the boundary region between the flow rate detection unit FDU and the resin MR has a tapered shape TP1, and the angle of the tapered shape TP1 is gentler than the angle of the tapered shape TP2 shown in FIG.
  • the adhesive ADH1 is provided so as to surround the diaphragm DF formed on the back surface of the semiconductor chip CHP1. It is premised on taking the composition to apply.
  • the bottom of the chip mounting portion TAB1 below the diaphragm DF formed on the back surface of the semiconductor chip CHP1 is formed.
  • the opening OP1 is formed, and the opening OP2 is provided in the resin MR that covers the back surface of the chip mounting portion TAB1 (fifth feature point).
  • the internal space of the diaphragm DF flows through the opening OP1 formed in the bottom of the chip mounting portion TAB1 and the opening OP2 formed in the resin MR. It communicates with the external space of the sensor FS3.
  • the pressure in the inner space of the diaphragm DF and the pressure in the outer space of the flow sensor FS3 can be made equal, and the stress can be suppressed from being applied to the diaphragm DF.
  • the semiconductor chip CHP1 and the lead LD1, and the semiconductor chip CHP1 and the lead LD2 are connected by wires W1 and W2 (sixth feature point).
  • FIG. 24 is a plan view showing a mounting configuration of the flow rate sensor FS5 after the dam DM is removed. As shown in FIG. 24, it can be seen that by cutting the dam DM, a plurality of electrical signals can be taken out independently from the plurality of leads LD1 and leads LD2.
  • the flow sensor FS5 in the fifth embodiment is configured as described above, and the manufacturing method thereof will be described below with reference to FIGS. 25 to 28 show the manufacturing process in the cross section taken along line BB in FIG. 23 (a).
  • a lead frame LF made of a copper material is prepared.
  • a chip mounting portion TAB1 and a protruding lead PLD are integrally formed, and an opening OP1 is formed at the bottom of the chip mounting portion TAB1.
  • the semiconductor chip CHP1 is mounted on the chip mounting portion TAB1. Specifically, the semiconductor chip CHP1 is connected to the chip mounting portion TAB1 formed on the lead frame LF with an adhesive ADH1. At this time, the semiconductor chip CHP1 is mounted on the chip mounting portion TAB1 so that the diaphragm DF formed on the semiconductor chip CHP1 communicates with the opening OP1 formed at the bottom of the chip mounting portion TAB1.
  • a flow rate detection unit FDU, wiring (not shown), and a control unit CU are formed by a normal semiconductor manufacturing process.
  • control unit CU semiconductor elements (not shown) such as MISFETs and wirings (not shown) are formed by a normal semiconductor manufacturing process.
  • diaphragm DF is formed in the position of the back surface facing the flow volume detection part FDU formed in the surface of the semiconductor chip CHP1 by anisotropic etching, for example.
  • the pad PD1 formed on the semiconductor chip CHP1 and the lead LD1 formed on the lead frame LF are connected by a wire W1 (wire bonding).
  • the pad PD2 formed on the semiconductor chip CHP1 is connected to the lead LD2 by the wire W2.
  • the wires W1 and W2 are formed from, for example, gold wires.
  • the surface of the semiconductor chip CHP1 excluding the flow rate detection unit FDU and its vicinity is sealed with a resin MR (molding process).
  • the lead frame LF on which the semiconductor chip CHP1 is mounted is sandwiched between the upper mold UM and the lower mold BM via the first space.
  • the resin MR is poured into the first space using the plunger PJ, thereby sealing the surface of the semiconductor chip CHP1 excluding the flow rate detection unit FDU and the vicinity thereof with the resin MR.
  • the inner space of the diaphragm DF is separated from the first space by the adhesive ADH1, so that the diaphragm DF can be filled even when the first space is filled with the resin MR. It is possible to prevent the resin MR from entering the internal space.
  • the semiconductor chip CHP1 in which the flow rate detection unit FDU is formed can be fixed with a mold, the position of the semiconductor chip CHP1 is suppressed while suppressing the displacement of the semiconductor chip CHP1.
  • a part can be sealed with the resin MR. This means that a part of the semiconductor chip CHP1 can be sealed with the resin MR while suppressing the displacement of each flow sensor according to the method of manufacturing the flow sensor in the fifth embodiment, and the semiconductor chip CHP1. It means that the variation in the position of the flow rate detection unit FDU formed in the above can be suppressed.
  • the position of the flow rate detection unit FDU that detects the flow rate of gas can be matched by each flow rate sensor, so that variation in the performance of detecting the gas flow rate in each flow rate sensor can be suppressed. A remarkable effect can be obtained.
  • the flow sensor manufacturing method according to the fifth embodiment is characterized in that the flow rate detection unit FDU formed in the semiconductor chip CHP1 is surrounded by the second space SP2 isolated from the first space.
  • the lead frame LF on which the semiconductor chip CHP1 is mounted is sandwiched between the mold BM and the upper mold UM.
  • the surface area of the other semiconductor chip CHP1 can be sealed while exposing the flow rate detection unit FDU formed in the semiconductor chip CHP1 and the vicinity thereof.
  • the flow rate sensor manufacturing method is characterized in that when the lead frame LF mounted with the semiconductor chip CHP1 is sandwiched between the upper mold UM and the lower mold BM, the lead frame LF mounted with the semiconductor chip CHP1.
  • the elastic film LAF is interposed between the upper mold UM and the upper mold UM.
  • the elastic film LAF is soft when the lead frame LF mounting the semiconductor chip CHP1 is sandwiched between the upper mold UM and the lower mold BM.
  • the dimension in the thickness direction of the elastic film LAF changes so as to absorb the thickness of the chip CHP1.
  • a polymer material such as Teflon (registered trademark) or a fluororesin can be used.
  • the flow sensor manufacturing method according to the fifth embodiment is characterized in that the insertion part IP1 formed in the lower mold BM is formed on the base part having a larger cross-sectional area than the insertion part. There is in point.
  • the insertion portion of the insertion piece IP1 is inserted into the opening OP1, and the pedestal portion of the insertion piece IP1 comes into close contact with the bottom surface of the chip mounting portion TAB1.
  • the pedestal part is firmly pressed against the back surface of the chip mounting part TAB1, so that the resin MR enters the opening OP1. It can be prevented.
  • the insertion piece IP1 is configured to provide the insertion portion on the pedestal portion having a larger cross-sectional area than the insertion portion, so that the resin MR reaches the opening OP1 by the pedestal portion.
  • the resin MR has an internal space of the diaphragm DF through the opening OP1. It is possible to effectively prevent intrusion.
  • the lead frame LF on which the semiconductor chip CHP1 is mounted is removed from the upper mold UM and the lower mold BM.
  • the flow sensor FS5 in the fifth embodiment can be manufactured.
  • the opening OP1 is formed on the bottom surface of the chip mounting portion TAB1.
  • An opening OP2 formed and communicating with the opening OP1 is formed in the resin MR.
  • the opening OP2 is produced as a result of forming a pedestal on the insert piece IP1, and the cross-sectional area of the opening OP2 is larger than the cross-sectional area of the opening OP1.
  • the internal space of the diaphragm DF flows through the opening OP1 formed in the bottom of the chip mounting portion TAB1 and the opening OP2 formed in the resin MR. It communicates with the external space of the sensor FS5.
  • the pressure in the inner space of the diaphragm DF and the pressure in the outer space of the flow rate sensor FS5 can be made equal, and stress can be suppressed from being applied to the diaphragm DF.
  • FIG. 29 is a diagram illustrating a mounting configuration of the flow rate sensor FS6 according to the sixth embodiment, and is a diagram illustrating a configuration after sealing with resin.
  • FIG. 29A is a plan view showing a mounting configuration of the flow rate sensor FS6 in the sixth embodiment.
  • 29B is a cross-sectional view taken along the line AA in FIG. 29A
  • FIG. 29C is a cross-sectional view taken along the line BB in FIG. 29A.
  • the mounting configuration of the flow sensor FS6 in the sixth embodiment is the same as the mounting configuration of the flow sensor FS5 in the fifth embodiment, except that the airflow control units FCU1 and FCU2 are not provided. Therefore, the flow rate sensor FS6 in the sixth embodiment also has the first to second feature points and the fourth to sixth feature points described in the fifth embodiment.
  • a part of the semiconductor chip CHP1 is exposed with the flow rate detection unit FDU formed in the semiconductor chip CHP1 exposed.
  • the structure is covered with the resin MR (first feature point). That is, in the sixth embodiment, the region of the semiconductor chip CHP1 other than the flow rate detection unit FDU is collectively sealed with the resin MR.
  • the sealing with the resin MR can be performed in a state where the semiconductor chip CHP1 in which the flow rate detection unit FDU is formed is fixed by a mold, and therefore, the semiconductor chip CHP1 can be prevented from being displaced.
  • the portion can be sealed with the resin MR.
  • the height of the resin MR (sealing body) on both sides sandwiching the exposed flow rate detection unit FDU is the flow rate.
  • the height of the surface of the semiconductor chip CHP1 including the detection unit FDU is higher (second feature point). That is, the exposed flow rate detection unit FDU is surrounded by the resin MR, and the height of the resin MR surrounding the flow rate detection unit FDU is higher than the height of the flow rate detection unit FDU.
  • Breakage of the chip CHP1 can be prevented. That is, the height of the resin MR sandwiching the flow rate detection unit FDU is higher than the height of the exposed flow rate detection unit FDU. For this reason, when the component comes into contact, first, it comes into contact with the high resin MR, so that the exposed surface (XY surface) of the semiconductor chip CHP1 including the low flow rate detection unit FDU comes into contact with the component, and the semiconductor It is possible to prevent the chip CHP1 from being damaged.
  • the region has a taper shape, and the taper shape of the boundary region orthogonal to the traveling direction (arrow direction, Y direction) of the gas flowing on the flow rate detection unit FDU is a boundary parallel to the traveling direction of the gas. It is steeper than the tapered shape of the region (fourth feature point).
  • the angle of the taper shape TP2 in the direction (X direction) orthogonal to the gas flow of the flow rate detection unit FDU is steeper than the angle of the taper shape TP1 in the direction of gas flow (Y direction) of the flow rate detection unit FDU.
  • the dimensional change of the flow path of the gas flowing in the Y direction can be reduced.
  • difference of the flow measurement by the backflow or turbulent flow of gas can be suppressed.
  • the angle of the tapered shape TP2 in the direction orthogonal to the gas flow direction (X direction) the wall of the gas flow path can be formed, and the gas flow in the X direction can be suppressed. it can.
  • the adhesive ADH1 is applied so as to surround the diaphragm DF formed on the back surface of the semiconductor chip CHP1. It is premised on taking the composition to do.
  • the bottom of the chip mounting portion TAB1 below the diaphragm DF formed on the back surface of the semiconductor chip CHP1 is formed.
  • the opening OP1 is formed, and the opening OP2 is provided in the resin MR that covers the back surface of the chip mounting portion TAB1 (fifth feature point).
  • the internal space of the diaphragm DF flows through the opening OP1 formed at the bottom of the chip mounting portion TAB1 and the opening OP2 formed in the resin MR. It communicates with the external space of the sensor FS4.
  • the pressure in the inner space of the diaphragm DF and the pressure in the outer space of the flow rate sensor FS4 can be made equal, and stress can be suppressed from being applied to the diaphragm DF.
  • the semiconductor chip CHP1 and the lead LD1 are connected by the wire W1
  • the semiconductor chip CHP1 and the lead LD2 are connected by the wire W2 (sixth feature point).
  • the flow rate sensor FS6 is mounted structure according to the sixth embodiment, the actual flow rate sensor FS6, after sealing with resin MR, dam DM constituting the outer frame body of the lead frame LF Is removed.
  • FIG. 30 is a plan view showing a mounting configuration of the flow sensor FS6 after the dam DM is removed. As shown in FIG. 30, it can be seen that by cutting the dam DM, a plurality of electrical signals can be taken out independently from the plurality of leads LD1 and leads LD2.
  • FIG. 31 is a diagram showing a mounting configuration of the flow rate sensor FS7 according to the seventh embodiment.
  • FIG. 31 (a) is a plan view showing the mounting configuration of the flow sensor FS7 in the seventh embodiment
  • FIG. 31 (b) is a cross-sectional view taken along the line AA in FIG. 31 (a). It is.
  • the mounting configuration of the flow sensor FS7 in the seventh embodiment shown in FIGS. 31 (a) and 31 (b) is the same as that of the flow sensor FS5 in the fifth embodiment shown in FIGS. 23 (a) to 23 (c). Since they are almost the same, different points will be described.
  • a hole HL is formed in the vicinity of the flow rate detection unit FDU exposed from the resin MR. That is, the flow rate sensor FS7 in the seventh embodiment is characterized in that the hole HL is formed on the surface of the semiconductor chip exposed from the resin MR.
  • the flow rate sensor FS7 in the seventh embodiment has a chip mounting portion TAB1 formed integrally with the protruding lead PLD.
  • the opening OP1 is not formed in the chip mounting portion TAB1, and the opening OP2 is not formed in the resin MR covering the bottom surface of the chip mounting portion TAB1.
  • a semiconductor chip CHP1 is mounted on the chip mounting portion TAB1 by an adhesive ADH1, and a diaphragm DF is formed on the back surface of the semiconductor chip CHP1.
  • a flow rate detection unit FDU is formed on the surface of the semiconductor chip CHP1 facing the diaphragm DF, and a control unit CU is formed on the lateral side of the flow rate detection unit FDU.
  • the surface of the semiconductor chip CHP1 is covered with the resin MR while the flow rate detection unit FDU and the vicinity thereof are exposed. At this time, a hole HL is formed on the surface of the semiconductor chip CHP1 exposed from the resin MR.
  • the hole HL is formed so as to penetrate from the surface of the semiconductor chip CHP1 to the diaphragm DF formed on the back surface of the semiconductor chip CHP1. Therefore, according to the flow rate sensor FS7 in the seventh embodiment, the inner space of the diaphragm DF and the outer space of the flow rate sensor FS7 communicate with each other through the hole HL. As a result, the pressure in the inner space of the diaphragm DF and the pressure in the outer space of the flow rate sensor FS7 can be equalized, and stress can be suppressed from being applied to the diaphragm DF.
  • the hole HL penetrating from the surface of the semiconductor chip CHP1 exposed from the resin MR to the back surface of the semiconductor chip CHP1 in which the diaphragm DF is formed is formed.
  • the internal space of the diaphragm DF and the external space of the flow sensor FS7 are in communication with each other.
  • the configuration example in which the hole HL is provided in the flow rate sensor FS5 in the fifth embodiment has been described.
  • the technical idea in the seventh embodiment is not limited to this, for example, The present invention can also be applied to the flow rate sensors FS1 to FS4 and FS6 in the first to fourth and sixth embodiments.
  • FIG. 32 is a diagram showing a mounting configuration of the flow sensor FS8 in the eighth embodiment.
  • FIG. 32A is a plan view showing the mounting configuration of the flow rate sensor FS8 in the eighth embodiment
  • FIG. 32B is a cross-sectional view taken along the line AA in FIG. It is.
  • the mounting configuration of the flow rate sensor FS8 in the eighth embodiment shown in FIGS. 32 (a) and 32 (b) is the same as that of the flow rate sensor FS5 in the fifth embodiment shown in FIGS. 23 (a) to 23 (c). Since they are almost the same, different points will be described.
  • a groove DIT is formed in the protruding lead PLD. That is, the flow rate sensor FS8 in the eighth embodiment is characterized in that the groove DIT is formed in the protruding lead PLD.
  • the flow sensor FS8 in the eighth embodiment has a chip mounting portion TAB1 formed integrally with the protruding lead PLD.
  • the opening OP1 is not formed in the chip mounting portion TAB1, and the opening OP2 is not formed in the resin MR covering the bottom surface of the chip mounting portion TAB1.
  • the semiconductor chip CHP1 is mounted on the chip mounting portion TAB1 by the adhesive ADH1, and the diaphragm DF is formed on the back surface of the semiconductor chip CHP1.
  • a flow rate detection unit FDU is formed on the surface of the semiconductor chip CHP1 facing the diaphragm DF, and a control unit CU is formed on the lateral side of the flow rate detection unit FDU.
  • the surface of the semiconductor chip CHP1 is covered with the resin MR while the flow rate detection unit FDU and the vicinity thereof are exposed.
  • the groove DIT formed in the protruding lead PLD extends to the chip mounting portion TAB1, and reaches the chip mounting portion TAB1 below the region where the diaphragm DF is formed. . Therefore, according to the flow sensor FS8 in the eighth embodiment, the groove DIT allows the internal space of the diaphragm DF and the external space of the flow sensor FS8 to communicate with each other. As a result, the pressure in the inner space of the diaphragm DF and the pressure in the outer space of the flow sensor FS8 can be equalized, and stress can be suppressed from being applied to the diaphragm DF.
  • the groove DIT is formed from the projecting lead PLD to the chip mounting portion TAB1 below the region where the diaphragm DF is formed, so that the internal space of the diaphragm DF
  • the feature is that the external space of the flow sensor FS8 is communicated.
  • the configuration example in which the groove DIT is provided in the flow rate sensor FS5 in the fifth embodiment has been described.
  • the technical idea in the eighth embodiment is not limited to this, for example, the above-described embodiment.
  • the present invention can also be applied to the flow sensors FS1 to FS4 and FS6 in the first to fourth and sixth embodiments.
  • FIG. 33 is a diagram illustrating a mounting configuration of the flow sensor module according to the ninth embodiment.
  • FIG. 33 (a) is a plan view showing a mounting configuration of the flow sensor module FSM1 in the ninth embodiment.
  • FIG. 33 (b) is a cross-sectional view taken along line AA in FIG. 33 (a)
  • FIG. 33 (c) is a cross-sectional view taken along line BB in FIG. 33 (a). is there.
  • the flow sensor module FSM1 in the ninth embodiment has a structure made of a resin MR2 having a rectangular shape, and is formed on the resin MR2 constituting this structure.
  • a gas flow path PAS is formed by the groove formed.
  • a flow sensor FS5 is embedded in the resin MR2 so as to communicate with the gas flow path part PAS.
  • a part of the pair of air flow control units FCU1, FCU2, the flow rate detection unit FDU, and the wiring WL1A constituting the flow rate sensor FS5 is exposed from the resin MR2.
  • the resin MR2 can be composed of, for example, a thermosetting resin such as an epoxy resin or a phenol resin, or a thermoplastic resin such as polycarbonate or polyethylene terephthalate. And you may comprise so that fillers, such as glass and mica, may be put in these resin.
  • a thermosetting resin such as an epoxy resin or a phenol resin
  • a thermoplastic resin such as polycarbonate or polyethylene terephthalate.
  • fillers such as glass and mica
  • the gas flows through the gas flow path part PAS along the direction of the arrow, and on the flow sensor FS5 provided to communicate with the gas flow path part PAS. Through the gas, and then the gas is discharged from an outlet (not shown).
  • the flow rate sensor FS5 has an elongated shape in a direction parallel to the traveling direction of the gas flowing on the flow rate detection unit FDU with the exposed flow rate detection unit FDU interposed therebetween.
  • a pair of airflow control units FCU1 and FCU2 are formed integrally with a resin MR (sealing body). Thereby, first, a pair of airflow control units FCU1 and FCU2 form passages on both sides of the gas flowing through the upper part of the flow rate detection unit FDU.
  • the pair of air flow control units FCU1 and FCU2 are formed with high accuracy by being sandwiched by a mold having high dimensional accuracy integrally with the resin MR.
  • the gas flow rate can be accurately measured without the gas flow being disturbed by the dimensional accuracy of the pair of air flow control units FCU1 and FCU2. Further, the pair of airflow control units FCU1 and FCU2 form passages on both sides of the gas flowing through the upper part of the flow rate detection unit FDU. For this reason, gas can be flowed to the upper part of flow volume detection part FDU in the state where the flow path size of gas was narrowed down. As a result, according to the flow sensor FS5, it is possible to suppress a decrease in the detection sensitivity of the gas flow rate even when the flow rate of the flowing gas is small.
  • the flow sensor FS5 has a tapered boundary region between the flow rate detector FDU exposed from the resin MR (sealing body) and the resin MR (sealing body).
  • the tapered shape of the boundary region orthogonal to the traveling direction (arrow direction, Y direction) of the gas flowing on the flow rate detection unit FDU is more than the tapered shape of the boundary region parallel to the traveling direction of the gas. It is steep. That is, the angle of the taper shape TP2 in the direction (X direction) orthogonal to the gas flow of the flow rate detection unit FDU is steeper than the angle of the taper shape TP1 in the direction of gas flow (Y direction) of the flow rate detection unit FDU.
  • the flow rate sensor FS5 by changing the angle of the tapered shape TP1 in the gas flow direction (Y direction), the dimensional change of the flow path of the gas flowing in the Y direction can be reduced. Thereby, since peeling of gas from resin MR can be prevented, the shift
  • the angle of the tapered shape TP2 in the direction perpendicular to the gas flow direction (X direction) by increasing the angle of the tapered shape TP2 in the direction perpendicular to the gas flow direction (X direction), the wall of the gas flow path can be formed, and the gas flow in the X direction can be suppressed. it can.
  • the flow sensor FS5 is formed so as to be embedded in the resin MR2 in which the gas flow path portion PAS is formed, and the lead LD1 and the lead formed in the flow sensor FS5.
  • the LD 2 is configured to be bent and protrude from below the resin MR2.
  • a cover CAP is formed on the top of the resin MR2 where the gas flow path portion PAS is formed.
  • the cover CAP can be made of, for example, a metal material such as an aluminum alloy, a thermosetting resin such as an epoxy resin or a phenol resin, or a thermoplastic resin such as polycarbonate or polyethylene terephthalate. And you may comprise so that fillers, such as glass and mica, may be put in these resin.
  • a diaphragm DF is formed on the back surface of the semiconductor chip CHP1 constituting the flow sensor FS5, and an opening OP1 is formed in a chip mounting area TAB1 that overlaps with the diaphragm DF when seen in a plan view.
  • An opening OP2 is formed in the resin MR that covers the back surface of the chip mounting portion TAB1, and the opening OP1 and the opening OP2 communicate with each other. Further, the resin MR2 is formed so as to cover the back surface of the resin MR in which the opening OP2 is formed, and the opening OP3 is formed in the resin MR2. The opening OP3 communicates with the opening OP2.
  • the opening OP1 formed in the chip mounting portion TAB1, the opening OP2 formed in the resin MR, and the opening OP3 formed in the resin MR2 are in communication with each other, and thereby the diaphragm.
  • the internal space of the DF communicates with the external space of the flow sensor module FSM1 through the opening OP1, the opening OP2, and the opening OP3.
  • the sectional area of the opening OP1 is smaller than the sectional area of the opening OP2, and the sectional area of the opening OP2 is smaller than the sectional area of the opening OP3.
  • a protruding lead PLD protrudes from the flow rate sensor FS5 embedded in the resin MR2 in which the gas flow path portion PAS is formed, and the protruding protruding lead PLD is It is bent and processed into a gull wing shape.
  • the mounting configuration of the flow sensor module FSM1 according to the ninth embodiment configured as described above is as follows. That is, the flow rate sensor module FSM1 according to the ninth embodiment is relative to the flow rate detection unit FDU among the flow rate detection unit FDU formed on the main surface of the semiconductor substrate and the back surface opposite to the main surface of the semiconductor substrate.
  • the flow rate sensor FS5 in which the semiconductor chip CHP1 having the diaphragm DF formed in the region to be sealed is sealed with the resin MR while exposing the flow rate detection unit FDU, and the gas that induces the gas to the flow rate detection unit FDU of the flow rate sensor FS5 And a flow path part PAS.
  • the flow sensor module FSM1 includes a resin MR2 that is formed so as to cover the outer side of the resin MR that seals the flow sensor FS5 and that exposes the flow rate detector FDU.
  • the gas flow path part PAS is composed of grooves formed on the surface of the resin MR2, and the gas flow path part PAS composed of grooves formed on the surface of the resin MR2 is detected by the flow rate sensor FS5. It is formed so as to be connected to the unit FDU, and is configured so that the gas is guided to the flow rate detection unit FDU of the flow rate sensor FS5 through the gas flow path unit PAS.
  • the flow rate sensor module FSM1 in the ninth embodiment is configured with parts including, for example, the gas flow path part PAS and the flow rate sensor FS5, and is combined with a groove formed in the resin MR2 as shown in FIG. 33 (b).
  • a cover CAP constituting the gas flow path portion PAS can be installed, or a screw mounting hole for connecting the flow sensor module FSM1 to an external device with a screw can be provided.
  • the gas flow path part PAS is formed by a groove formed in the resin MR2.
  • the present invention is not limited to this. You may comprise so that path part PAS may be formed.
  • the flow sensor module FSM1 in the ninth embodiment is configured as described above, and the manufacturing method thereof will be described below with reference to FIGS. 34 to 36 show the manufacturing process in the cross section taken along the line BB in FIG. 33 (a).
  • the flow sensor FS5 is manufactured.
  • the flow sensor FS5 can be manufactured, for example, by the method described in the fifth embodiment.
  • a bending process is performed on the protruding lead PLD protruding from the resin MR. That is, as shown in FIG. 35, the protruding lead PLD protruding from the resin MR is bent into a gull wing shape.
  • the flow rate sensor FS5 obtained by bending the protruding lead PLD is sandwiched between the upper mold UM and the lower mold BM through the space. Thereafter, the flow rate sensor FS5 is further sealed with the resin MR2 by pouring the resin MR2 into this space under heating. At this time, as shown in FIG. 36, the height of the flow rate detection unit FDU formed on the surface of the semiconductor chip CHP1 is lower than the height of the resin MR sandwiching the flow rate detection unit FDU.
  • the lower surface of the upper mold UM is in contact with the upper surface of the resin MR of the flow sensor FS5, and the flow rate formed at a position lower than the upper surface of the resin MR. It does not contact the detection unit FDU. That is, a gap is formed between the exposed flow rate detection unit FDU and the upper mold UM. For this reason, even when the flow rate sensor FS5 is further sealed with the resin MR2, the flow rate detection unit FDU formed in the semiconductor chip CHP1 can be kept exposed.
  • the feature of the ninth embodiment is that the protruding lead PLD protruding from the flow sensor FS5 is bent.
  • the bent projecting lead PLD is pressed against the lower mold BM, and the protrusion pressed against the lower mold BM
  • the flow rate sensor FS5 is fixed between the upper mold UM and the lower mold BM by the lead PLD. That is, the protruding lead PLD that has been bent has a function of securely fixing the flow sensor FS5 to a predetermined position. (Positioning function).
  • sealing with resin MR2 can be performed in a state where flow sensor FS5 is fixed at a predetermined position.
  • the feature of the manufacturing method of the flow sensor module in the ninth embodiment is that the insertion piece IP2 formed in the lower mold BM is configured to form an insertion portion on a pedestal portion having a large cross-sectional area. It is in.
  • the first insertion portion of the insertion piece IP2 is inserted into the opening OP1
  • the second insertion portion of the insertion piece IP2 is inserted into the opening OP2.
  • the base part is formed under the 2nd insertion part, and this base part comes to closely_contact
  • the pedestal is firmly pressed against the back surface of the resin MR even if a slight gap occurs between the first insertion portion and the opening OP1 of the insert piece IP2 or between the second insertion portion and the opening OP2. Therefore, the resin MR2 can be prevented from entering the opening OP1 and the opening OP2. That is, in the ninth embodiment, the insertion piece IP2 is configured to provide the second insertion portion on the pedestal portion having a larger cross-sectional area than the second insertion portion, and therefore the resin MR2 is opened by the pedestal portion.
  • the flow sensor module in which the flow sensor FS5 is sealed with the resin MR2 is removed from the upper mold UM and the lower mold BM. Thereby, the flow sensor module in this Embodiment 9 can be manufactured.
  • the opening OP1 is formed on the bottom surface of the chip mounting portion TAB1.
  • An opening OP2 that is formed and communicates with the opening OP1 is formed in the resin MR, and an opening OP3 that communicates with the opening OP2 is formed in the resin MR3.
  • the opening OP3 is generated as a result of forming a pedestal on the insert piece IP2, and the cross-sectional area of the opening OP3 is larger than the cross-sectional area of the opening OP2.
  • the internal space of the diaphragm DF is divided into the opening OP1 formed in the bottom of the chip mounting portion TAB1, the opening OP2 formed in the resin MR, and the resin MR2. It communicates with the external space of the flow rate sensor module through the formed opening OP3.
  • the pressure in the inner space of the diaphragm DF and the pressure in the outer space of the flow sensor module can be equalized, and stress can be suppressed from being applied to the diaphragm DF.
  • the flow sensor module FSM1 in the ninth embodiment the example in which the flow sensor FS5 described in the fifth embodiment is used has been described.
  • the technical idea of the present invention is not limited to this, and the embodiment is described.
  • the present invention can be widely applied to the flow rate sensor modules in which the flow rate sensors FS1 to FS4 described in 1 to 4 and the flow rate sensors FS6 to FS8 described in the sixth to eighth embodiments are integrally sealed with the resin MR2.
  • the gas flow path part PAS is formed from a groove formed on the surface of the resin MR2, and the gas flow path part PAS is formed as a flow sensor.
  • the flow sensor FS1 and the flow sensor FS2 are configured using the wiring board WB.
  • the flow sensor FS1 and the flow sensor FS2 are formed on the back surface of the wiring board WB. Resin MR is not formed. Therefore, in the flow rate sensor module using the flow rate sensor FS1 and the flow rate sensor FS2 configured as described above, the resin MR2 is directly formed on the back surface of the wiring board WB, and the opening OP3 is formed in the resin MR2.
  • a diaphragm DF is formed on the back surface of the semiconductor chip CHP1 constituting the flow rate sensors FS1 to FS2, and an opening OP1 is formed in the wiring board WB overlapping with the diaphragm DF when seen in a plan view.
  • An opening OP3 is formed in the resin MR2 that covers the back surface of the wiring board WB, and the opening OP1 and the opening OP3 are configured to communicate with each other.
  • the internal space of the diaphragm DF communicates with the external space of the flow sensor module through the opening OP1 and the opening OP3.
  • the cross-sectional area of the opening OP1 is smaller than the cross-sectional area of the opening OP3.
  • FIG. 37 is a diagram showing a mounting configuration of the flow sensor module FSM2 according to the tenth embodiment.
  • FIG. 37 (a) is a plan view showing a mounting configuration of the flow sensor module FSM2 in the tenth embodiment.
  • FIG. 37 (b) is a cross-sectional view taken along line AA in FIG. 37 (a)
  • FIG. 37 (c) is a cross-sectional view taken along line BB in FIG. 37 (a). is there.
  • the mounting configuration of the flow sensor module FSM2 in the tenth embodiment shown in FIGS. 37 (a) to (c) is substantially the same as that of the flow sensor module FSM1 in the ninth embodiment shown in FIGS. 33 (a) to (c). Therefore, different points will be described.
  • the flow sensor FS5 is formed so as to be embedded in the resin MR2 in which the gas flow path portion PAS is formed, and is formed in the flow sensor FS5.
  • the lead LD1 and the lead LD2 are bent so as to protrude from below the resin MR2.
  • the flow sensor FS5 is formed so as to be embedded in the resin MR2 in which the gas flow path portion PAS is formed.
  • the formed lead LD1 and lead LD2 are bent so as to protrude from above the resin MR2.
  • the technical idea of the present invention can also be applied to the flow sensor module FSM2 according to the tenth embodiment configured as described above.
  • FIG. 38 is a diagram showing a mounting configuration of the flow sensor module FSM3 according to the eleventh embodiment.
  • FIG. 38A is a plan view showing the mounting configuration of the flow sensor module FSM3 in the eleventh embodiment.
  • FIG. 38 (b) is a cross-sectional view taken along the line AA in FIG. 38 (a)
  • FIG. 38 (c) is a cross-sectional view taken along the line BB in FIG. 38 (a). is there.
  • the mounting configuration of the flow sensor module FSM3 in the eleventh embodiment shown in FIGS. 38 (a) to (c) is substantially the same as that of the flow sensor module FSM1 in the ninth embodiment shown in FIGS. 33 (a) to (c). Therefore, different points will be described.
  • a further resin MR2 is formed so as to cover the bottom surface of the resin MR constituting the flow rate sensor FS5.
  • the bottom surface of the resin MR constituting the flow sensor FS5 is not covered with the resin MR2, and the bottom surface of the resin MR and the bottom surface of the resin MR2 are flush with each other. It has become.
  • the technical idea of the present invention can also be applied to the flow sensor module FSM3 according to the eleventh embodiment configured as described above.
  • the amount of the resin MR2 used can be reduced.
  • the flow sensor described in the above-described embodiment is a device that measures the flow rate of gas, but the type of specific gas is not limited, and air, LP gas, carbon dioxide gas (CO 2 gas),
  • the present invention can be widely applied to devices that measure the flow rate of any gas such as Freon gas.
  • the flow sensor for measuring the flow rate of gas has been described.
  • the technical idea of the present invention is not limited to this, and a part of a semiconductor element such as a humidity sensor is exposed.
  • the present invention can be widely applied to semiconductor devices that are resin-sealed in such a state.
  • the present invention can be widely used in manufacturing industries for manufacturing semiconductor devices such as flow sensors.

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  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Volume Flow (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Pressure Sensors (AREA)
PCT/JP2010/067946 2010-10-13 2010-10-13 流量センサおよびその製造方法並びに流量センサモジュールおよびその製造方法 WO2012049742A1 (ja)

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PCT/JP2010/067946 WO2012049742A1 (ja) 2010-10-13 2010-10-13 流量センサおよびその製造方法並びに流量センサモジュールおよびその製造方法
US13/393,155 US8640538B2 (en) 2010-10-13 2011-09-13 Flow sensor and manufacturing method of the same and flow sensor module and manufacturing method of the same
EP18175855.8A EP3421949B1 (en) 2010-10-13 2011-09-13 Flow sensor module for measuring a fow rate of a gas
CN201510757401.6A CN105333913B (zh) 2010-10-13 2011-09-13 传感器
KR1020147003025A KR101414755B1 (ko) 2010-10-13 2011-09-13 유량 센서 모듈
MX2012003145A MX2012003145A (es) 2010-10-13 2011-09-13 Sensor de flujo y metodo de fabricacion del mismo, y modulo de sensor de flujo y metodo de fabricacion del mismo.
KR1020127005443A KR101444867B1 (ko) 2010-10-13 2011-09-13 유량 센서
CN201510757388.4A CN105486364B (zh) 2010-10-13 2011-09-13 传感器模块
KR1020147003019A KR101411440B1 (ko) 2010-10-13 2011-09-13 유량 센서 및 그 제조 방법
CN201410244748.6A CN103994794B (zh) 2010-10-13 2011-09-13 流量传感器及其制造方法和流量传感器模块及其制造方法
CN201180003582.3A CN102575955B (zh) 2010-10-13 2011-09-13 流量传感器及其制造方法和流量传感器模块及其制造方法
CN201410244763.0A CN103994795B (zh) 2010-10-13 2011-09-13 流量传感器及其制造方法和流量传感器模块及其制造方法
MX2015001324A MX349742B (es) 2010-10-13 2011-09-13 Sensor de flujo y metodo de fabricacion del mismo, y modulo de sensor de flujo y metodo de fabricacion del mismo.
EP11818969.5A EP2629065A4 (en) 2010-10-13 2011-09-13 Flow sensor and production method therefor, and flow sensor module and production method therefor
PCT/JP2011/070900 WO2012049934A1 (ja) 2010-10-13 2011-09-13 流量センサおよびその製造方法並びに流量センサモジュールおよびその製造方法
JP2012501490A JP5220955B2 (ja) 2010-10-13 2011-09-13 流量センサ
JP2012062472A JP5456815B2 (ja) 2010-10-13 2012-03-19 流量センサおよびその製造方法
JP2012062473A JP5456816B2 (ja) 2010-10-13 2012-03-19 流量センサモジュールおよび流量センサ
US14/143,553 US9222813B2 (en) 2010-10-13 2013-12-30 Flow sensor and manufacturing method of the same and flow sensor module and manufacturing method of the same
JP2014001993A JP5909250B2 (ja) 2010-10-13 2014-01-08 流量センサモジュール
US14/210,787 US9222814B2 (en) 2010-10-13 2014-03-14 Flow sensor and manufacturing method of the same and flow sensor module and manufacturing method of the same
JP2016061504A JP6220914B2 (ja) 2010-10-13 2016-03-25 センサモジュール

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CN105486364A (zh) 2016-04-13
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US8640538B2 (en) 2014-02-04
US20140109691A1 (en) 2014-04-24
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US9222813B2 (en) 2015-12-29
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US20130192388A1 (en) 2013-08-01
KR101444867B1 (ko) 2014-09-26
KR101411440B1 (ko) 2014-07-02
EP2629065A4 (en) 2017-12-13
JP2014059327A (ja) 2014-04-03
CN105486364B (zh) 2020-08-18

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