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Definitions

• the present disclosure relates to gallium nitride semiconductors - transistors and diodes. More particularly, the disclosure relates to power devices that are required to provide high current capability.
• Gallium nitride-based power semiconductor devices are well known to have properties that are desirable for power applications. Most of the proposed structures are lateral conductive devices which have power electrodes and control electrodes disposed along the top surface of the devices. Just below the electrodes, a hetero structure of aluminium gallium nitride (AlGaN) and gallium nitride (GaN), charges are generated at a hetero interface due to spontaneous polarization
• HFET high current density heteroj unction field effect transistor
• Nitride semiconductor-based power transistors have therefore been widely investigated and developed, and an on-resistance as low as one tenth or less of a Si-based metal oxide
• MOSFET semiconductor field effect transistor
• IGBT insulated gate bipolar transistor
• a nitride semiconductor device shown in FIG. 11 has a drain electrode pad 125 connected to drain electrodes 118, a source electrode pad 126 connected to source electrodes 117, and a gate electrode pad 129 connected to gate electrodes 119.
• the area required for the nitride semiconductor device is about three times as large as the area of an active region 130. It is possible to reduce the size of an electrode pad, but such reduction in size of the electrode pad is limited in view of the yield.
• an electrode pad over the active region.
• a channel through which electrons drift extends in a direction parallel to a main surface of a substrate. Therefore, not only a gate electrode but a source electrode and a drain electrode are formed over the active region.
• a voltage of several hundreds of volts is applied between the drain electrode pad and the source electrode. It is therefore difficult to assure insulation between the drain electrode pad and the source electrode with a normal interlayer insulating film.
• the electrode pad and an electrode formed right under the electrode pad need to be connected to each other through a special plug or via. It is therefore difficult to connect the pad and also to assure the flatness of the electrode pad.
• the present disclosure provides new constructions and topologies in a GaN semiconductor device.
• islands either triangular or rectangular island structures are used in place of the common multi-finger or interdigitated structure.
• These new island topologies can easily result in the so called specific transistor resistance being less than half those achieved by equivalent area multi-finger layouts. More significantly the effective or active area ratios are 3 to 5 times superior because of the reduced surface interconnect and pad requirements.
• the present disclosure provides a device with a larger gate width (commonly known as Wg), within a given active area.
• Wg gate width
• FIG. 1 is a plan view of a nitride semiconductor device according to one exemplary embodiment
• FIG. 2 is a cross-sectional view of the nitride semiconductor device of Fig. 1 ;
• FIG. 3 is a detailed plan view showing the source and drain clusters of the nitride semiconductor device of Fig. 1 ;
• FIGS. 4 and 4a are each a detailed plan view showing the gate clusters of the nitride
• FIG. 5 is a cross-sectional view of a gold bump used in a cluster arrangement
• FIG. 6 is a plan view of a nitride semiconductor device according to another exemplary embodiment
• FIG. 7 is a cross-sectional view of the nitride semiconductor device of Fig. 6;
• FIG. 8 is a plan view of a modification, using triangular shaped electrodes, of a nitride semiconductor device of Fig. 6;
• FIG. 9 is a plan view of a modification using castellated peninsulas from each side of the islands of a nitride semiconductor device according to yet another embodiment
• FIG. 10 is a plan view of an additional modification using castellated peninsulas from each side of the islands of a nitride semiconductor device according of Fig. 9;
• FIG. 11 is a plan view of a conventional nitride semiconductor device.
• electrode when in reference to source, drain, anode or cathode, may be used interchangeably and portray the same meaning and intent.
• FIG. 1 shows a planar structure of a nitride semiconductor device of an exemplary embodiment.
• FIG. 2 shows a portion of the cross-sectional structure taken along line II-II in FIG. 1.
• the nitride semiconductor device has a nitride semiconductor layer 13 formed on a non-conductive substrate 11 with a buffer layer 12 interposed between.
• the nitride semiconductor layer 13 is formed from an undoped gallium nitride (GaN) layer 14 having a thickness of 1 ⁇ and an undoped aluminum gallium nitride (AlGaN) layer 15 having a thickness of 25 nm.
• the undoped GaN layer 14 and the undoped AlGaN layer 15 are examples of the undoped GaN layer 14 and the undoped AlGaN layer 15 are
• a two-dimensional electron gas (2DEG) is generated in an interface region of the undoped GaN layer 14 with the undoped AlGaN layer 15, forming a channel region.
• FIGS1 and 2 illustrate a source electrode island 17 and a drain electrode island 18 that are formed spaced apart from each other on the nitride semiconductor layer 13.
• the undoped AlGaN layer 15 and a part of the undoped GaN layer 14 are removed in the regions of the source electrode 17 and the drain electrode 18 so that the source electrode 17 and the drain electrode 18 reach a level lower than the interface between the undoped AlGaN layer 15 and the undoped GaN layer 14.
• the source electrode 17 and the drain electrode 18 are formed from titanium (Ti) and aluminum (Al).
• a p-type AlGaN layer 20 having a thickness of 200 nm is formed in a stripe shape between the source electrode 17 and the drain electrode 18.
• a gate electrode 19 is formed on the p-type AlGaN layer 20.
• the gate electrode 19 is formed from palladium (Pd).
• the nitride semiconductor illustrated in Figs. 1 and 2 is a multi-island field effect transistor (FET). More specifically, each rectangular source electrode island 17 and rectangular drain electrode island 18 have a plurality of active interface areas 30.
• a first insulating layer 22 is deposited on top of the gate electrode 19 and active interface areas 30 to provide for a raised source field plate 24 over the gate, the field plate 24 is formed during the gold interconnection metallization process which comes next.
• the first insulating layer 22 also provides electrical insulation between the source electrode gold interconnection and the gate electrode 19.
• a plurality of source island electrodes 17 are electrically connected to each other in clusters of 1 to 50 islands, and form a source cluster 31 with a common electrical interconnection point formed with a source gold bump 34.
• a plurality of drain island electrodes 18 are electrically connected to each other in clusters of 1 to 50 islands, and form a drain cluster 32 with a common electrical interconnection point formed with a drain gold bump 35.
• a plurality of gate electrodes 19 are electrically connected to each other in clusters of 1 to 50, thus forming a gate cluster 33, additionally these gate clusters 33 are electrically connected throughout the device by means of gold metalized tracks 37 which terminate with gate gold bumps 36.
• the gate gold metalized tracks 38 are vertically oriented above the source metal tracks which are at a similar voltage potential, thereby reducing a potential breakdown voltage problem between gate and drain tracks.
• a plurality of source clusters 31, drain clusters 32 and gate clusters 33 are arranged so as to be alternately inverted with respect to each drain electrode 18 and source electrode 17, with a gate electrode 19 there between.
• the electrical connections between island electrodes are created by means of vias and gold metalized tracks of 1 ⁇ thickness and 3 to 4 ⁇ widths, using one or a plurality of metallization layers, using a lift off resist mask for each layer.
• the use of multiple metallization layers improves device fabrication yield and reduces metal lift off problems during the fabrication process.
• the source gold bump 34, drain gold bump 35 and gate gold bump 36 electrical interconnection points provide distributed electrical current collection points throughout the device for the drain, source and gate electrodes, thereby substantially eliminating the voltage drop variations and electromigration problems found in other power electronic semiconductor devices and permitting the use of standard gold thicknesses and conventional track widths, therefore removing the need for a plurality of the typical die area consuming wide collecting tracks and bonding pads, while still providing all interconnection points on a single device surface.
• a second insulating layer 23 is deposited after the source and drain gold metallization tracks 37 have been created, to provide insulation between the source gold tracks and the gate gold tracks. Vias are etched out to permit electrical connections from the gate electrode collection points 39 to the gate gold metallization tracks 38, as shown in Figure 4a.
• a third insulating layer 25 is deposited after the gate gold metallization tracks have been created, to protect the die from oxidation. Vias are etched out to at all gold bumps source, drain and gate to permit electrical connections from the gold metalized tracks to the plurality of source, drain and gate gold bumps 34, 35, 36.
• FIG. 5 shows a portion of the cross-sectional structure taken along line V-V in FIG. 1.
• an example of gold bumps 34, 35 is shown.
• the present state of the art gold bump technology which is readily available, has spacing limitations between bump centers; this limits how close the gold bumps can be located to each other on the device. Without this gold bump spacing limit, the present disclosure allows for a gold bump on each island, therefore eliminating the need for inter-island electrical connections provided by the gold metalized tracks 37, thereby maximizing the gate width per area.
• a feasible device may have clusters of typically 24 to 48 island electrodes per gold bump. Larger clusters may also be formed if even greater gold bump spacing was required.
• This multi-island structure enables the nitride semiconductor device to have a very wide gate width (Wg), whereby a high power device capable of high current operation can be implemented.
• the first, second and third insulating layers 22, 23 and 25 are typically formed from silicon nitride (SiN), having a thickness of 1 ⁇ .
• the above example is not limited to using metal for interconnect and may use an material such as silicide/polysilicon to replace the metal interconnect and contact system allowing for a reduction of costs, current hogging, concentrated stresses and electromigration factors.
• a silicon carbon (SiC) substrate may be used as the substrate 11 using an orientation that interfaces to the buffer layer 12 with the least lattice mismatch.
• SiC silicon carbon
• any substrate may be used as long as the substrate is electrically non- conductive and a nitride semiconductor layer can be grown on the substrate.
• First and second island electrodes can be predominately rectangular in shape with 18 ⁇ sides with lateral spacing of 8 ⁇ between adjacent electrodes. Clusters of 24 island electrodes per gold bump connection for both source and drain electrodes, with gate clusters of 50 active segments, can be used.
• FIG. 6 shows a planar structure of a nitride semiconductor device according to another exemplary embodiment.
• FIG. 7 shows a portion of the cross-sectional structure taken along line VII-VII of FIG. 6.
• the nitride semiconductor device of the second embodiment has a nitride semiconductor layer 63 formed on an electrically non-conductive silicon (SiC) substrate 61 with a buffer layer 62 interposed there between.
• the nitride semiconductor layer 63 is formed from an undoped gallium nitride (GaN) layer 64 having a thickness of 1 ⁇ and an undoped aluminum gallium nitride (AlGaN) layer 65 having a thickness of 25 nm.
• the undoped GaN layer 64 and the undoped AlGaN layer 65 are sequentially formed over the buffer layer 62 in this order.
• a two-dimensional electron gas (2DEG) is generated in an interface region of the undoped GaN layer 64 with the undoped AlGaN layer 65.
• a cathode electrode island 67 and an anode electrode island 68 are formed spaced apart from each other on the nitride semiconductor layer 63.
• the cathode electrode island 67 may be formed from titanium (Ti) and aluminum (Al) and reaches a level lower than the interface between the undoped AlGaN layer 65 and the undoped GaN layer 64.
• the anode electrode island 68 is formed from palladium (Pd) and is in contact with the top surface of the undoped AlGaN layer 65.
• a region where a cathode electrode island 67 and anode electrode island 68 are formed adjacent to each other, in the nitride semiconductor layer 63 is referred to as an active interface area 30.
• the nitride semiconductor device of this embodiment is a multi-island diode. More specifically, each rectangular cathode electrode island 67 and rectangular anode electrode island 68 have a plurality of active interface areas 30.
• a first insulating layer 72 is deposited on top of the active interface areas 30 to provide for a raised anode field plate 74; the field plate 74 is formed during the gold interconnection metallization process which comes next.
• a plurality of cathode electrode islands 67 are electrically connected, by means of gold metalized tracks 87, to each other in clusters of 1 to 50 islands, and form a cathode cluster 81 with a common electrical interconnection point formed with a cathode gold bump 84.
• a plurality of anode electrode islands 68 are electrically connected, by means of gold metalized tracks 87, to each other in clusters of 1 to 50 islands, and form an anode cluster 82 with a common electrical interconnection point formed with a anode gold bump 85.
• a plurality of cathode clusters 81 and anode clusters 82 are arranged so as to be alternately inverted with respect to each cathode electrode 67 and anode electrode 68, thereby creating the maximum number of active interface areas 30.
• a second insulating layer 73 is formed on the device except in the areas where the cathode gold bumps 84 and the anode gold bumps 85 are to be placed.
• the second insulating layer 73 is provided to stabilize the surface of the device and is formed from silicon nitride (SiN), having a thickness of 1 ⁇ .
• a triangular electrode island shape (67, 68) may be used, as shown in plan view in FIG. 8, where a portion of a nitride semiconductor diode is illustrated. Similar structures with gate electrodes between the source and drain electrode islands are also within the scope of the present disclosure.
• FIG. 9 shows a plan view of a portion of a planar structure of a nitride semiconductor device according to a third embodiment, wherein the plurality of simple rectangular island electrode shapes have been castellated (or crenulated).
• the castellated peninsulas 91 from the first electrode islands are interleaved with the castellated peninsulas 92 from the second electrode islands to increase the active interface area 30 between each type of electrode.
• a third stripe shaped electrode 93 is deposited to form the gate electrode of a nitride transistor. Similar diode structures without the gate electrodes between the electrode islands' castellated peninsulas are also within the scope of the disclosure.
• the castellated peninsulas 91 and 92 which are shown in rectangular shape in FIG. 9, can alternatively be of a tapered trapezoidal shape to improve the electromigration problems that pertain to any high current applications.
• the castellated peninsulas can also have gold or other metal centered along them to increase their electrical current handling capabilities.
• Transistors made using the structure shown in FIG 9 can provide two to three times lower on-resistance than the simple island structure for practical low voltage semiconductor implementations, using smaller electrode spacing.
• the structure shown in FIG. 9 is well suited to flip-chip electrode electrical connections by using the gold bumps, discussed previously.
• a triangular electrode island shape with castellated peninsulas may be used, either with or without gate electrodes, to create either transistors or diodes.
• a plurality of additional active interface areas 30 can be created by extending the castellated peninsulas into those areas 95 from the adjacent island electrodes, as shown in FIG. 10. This increases the gate length and current handling capability by up to an additional 25%. Typically the increase may be less to enable creation of wider peninsulas 96 to handle the current from the additional interleaved peninsulas 91, 92.
• the resulting semiconductor devices can be formed with or without gate electrodes, to create either transistors or diodes. In the diode application, or in cases where transistor gate speed is not critical, the increase in current handling capability may be up to almost 50% since the other non-active area 97 may also be used for additional peninsulas if it is not required for gate connections.

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• 2011
  • 2011-04-13 US US13/641,003 patent/US8791508B2/en active Active
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