CN102893392A - 采用孤岛拓扑结构的高密度氮化镓器件 - Google Patents

采用孤岛拓扑结构的高密度氮化镓器件 Download PDF

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CN102893392A
CN102893392A CN2011800204107A CN201180020410A CN102893392A CN 102893392 A CN102893392 A CN 102893392A CN 2011800204107 A CN2011800204107 A CN 2011800204107A CN 201180020410 A CN201180020410 A CN 201180020410A CN 102893392 A CN102893392 A CN 102893392A
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electrode
isolated
semiconductor device
compound semiconductor
nitride
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CN102893392B (zh
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约翰·罗伯茨
阿哈默德·米桑
格文·帕特森
格雷格·克洛维克
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GaN Systems Inc
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Abstract

本发明公开一种氮化镓（GaN）系列器件-晶体管和二极管，比前述GaN器件具有更高的单位面积电流处理能力。这一改进要归因于改进的布局拓扑结构。该器件还包括更简单、但性能更佳的倒装芯片连接系统和可减小热阻的装置。本发明还公开了一种简化的制造工艺，展示了使用孤岛电极替代指状电极的布局方案以将有源区密度增至传统交指结构的两倍或五倍。可使用孤岛拓扑结构来构造超低导通晶体管和损失较低的二极管。具体而言，本发明提供了一种提高横向GaN结构性价比的装置。

Description

采用孤岛拓扑结构的高密度氮化镓器件
技术领域
本发明涉及一种氮化镓半导体-晶体管和二极管，尤其涉及一种可提供大电流承受能力的功率器件。
背景技术
众所周知，氮化镓功率半导体器件的特性特别适用于功率应用。大多数的拟议结构为顶部设有功率电极和控制电极的横向导电器件。电极正下面是铝镓氮（AlGaN）和氮化铝（GaN）的异质结，自发极化和压电极化在异质界面产生电荷，从而得到1X1013cm-2或更大的载流子面密度，而不会有意增加杂质。因此，大电流密度异质结场效应晶体管可通过使用异质界面处产生的二维电子气（2DEG）来实现。
因此人们一直都致力于广泛研究开发氮化物半导体基功率晶体管，目前已在需要200V或更高的击穿电压的场效应中应用了导通硅基金属氧化物半导体场效应晶体管（MOSFET）十分之一或更小的电阻、或导通绝缘栅双极晶体管（IGBT）三分之一或更小的电阻（例如，参见W.Saitoetal.，“IEEE电子器件汇刊”第50卷，第12章，第2528页）。氮化物半导体器件有源区的尺寸可做得比硅基半导体器件小。因此，人们一直也期望能缩小氮化物半导体器件的尺寸。
传统的氮化物半导体器件有源区的尺寸可缩小至大约为硅基半导体器件有源区的尺寸的三分之一至十分之一。然而，由于连接线路的电极极板占据了较大的面积，所以因电迁移问题而无法充分地缩小横向氮化物半导体器件载流互连线的尺寸。
例如，图11所示的氮化物半导体器件具有一个与漏极118相连的漏极极板125、与源极117相连的源极极板126以及与栅极119相连的栅极极板129。此时，氮化物半导体器件所需的面积大致是有源区130的三倍。电极极板的尺寸可以缩小，但是从击穿方面考虑，尺寸缩小受到一定限制。
还可在有源区设置电极极板。然而，氮化物半导体器件中，电子在其中流动的沟道的方向与衬底的主表面平行。因此，除栅极外，有源区上还设置源极和漏极。在功率器件中，例如，在漏极极板和源极极板之间施加几百伏的电压。因此使用普通层间绝缘膜很难确保漏极极板和源极之间绝缘。
此外，在多指氮化物半导体器件的有源区设置电极极板（如图11所示）的情况下，该电极极板和设在电极极板正下方的电极需要使用特殊的插头或通孔相互连接在一起。因此，连接极板并确保电极极板的平整度具有一定难度。
发明内容
因此理想的做法是克服电迁移、电极极板面积、电气互连面积以及有源区不足的问题。为解决这些问题以及现有技术的其它缺点，本发明提供了GaN半导体器件新型结构和拓扑结构。
具体而言，提出了使用孤岛结构（三角或矩形孤岛结构）替代常见的多指或交指结构。这些新型孤岛拓扑结构可很容易使所谓的特定的晶体管电阻是相等面积多指布置所能实现的一半。更重要的是，由于减少了表面互连和降低了对极板要求，有效或有源面积比因而提高了3至5倍。
本发明提供了一种规定的有源区内栅极宽度（常称作Wg）较大的器件。某些示例性实施例中提供的二极管和晶体管设置的拓扑结构，不仅提高了有源面积内的电流处理能力，还极大地提高了整个器件单位面积的电流处理能力。此外，还提供了一种性能极好的GaN晶体管和二极管的简单的制造工艺。
以上对主要特征和一些可选方面进行了总结。为方便进一步理解本发明，以下将用几个示例进行说明。
附图说明
图1为一个示例性实施例的氮化物半导体器件的平面图；
图2为图1中氮化物半导体器件的截面图；
图3为图1中氮化物半导体器件源极和漏极组的平面详图；
图4和图4a为图1中氮化物半导体器件栅极组的平面详图，其中，为更清楚说明栅极组，未示出漏极和源极互连；
图5为组结构中使用的金凸块的截面图；
图6为另一个示例性实施例的氮化物半导体器件的平面图；
图7为图6中氮化物半导体器件的截面图；
图8为图6中氮化物半导体器件使用三角形电极进行更改后的平面图；
图9为另一示例性实施例的氮化物半导体器件孤岛各侧使用齿形半岛进行更改后的平面图；
图10为图9中的氮化物半导体器件孤岛各侧使用齿形半岛进行另一种更改后的平面图；
图11为传统氮化物半导体器件的平面图。
发明详细说明
本发明中使用的“电极”、“孤岛”、“孤岛电极”可与源极、漏极、阳极或阴极互换使用，它们具有相同的目的和意义。
以下将对某些示例性实施例进行描述，以方便更全面地理解本发明所公开的器件的结构、功能、制造和使用原理及其方法。并结合附图对这些实施例的一个或多个示例进行说明。本领域的技术人员应理解，本发明具体描述的及附图中说明的器件和方法为非限制性示例性实施例。某一示例性实施例中说明或描述的特征可与其它实施例的特征相结合使用。此类更改和变型均在本发明范围内。
无论本说明书范围内的引用范围如何，除非另有规定，其子范围均在本发明范围内。若某些特性为一个或另一个变体的属性，除非另有规定，只要此类特性适用于其它变体或未与这些变体发生冲突，则此类特性可应用于所有这些其它变体。
具体实施方式
实施例1
图1为一实施例的氮化物半导体器件的平面结构。图2为沿图1中II-II线截取的截面结构的一部分。
如图2所示，氮化物半导体器件具有设在不导电衬底11上的氮化物半导体层13，缓冲层12设在两者之间。氮化物半导体层13由厚度为1μm的无掺杂氮化镓（GaN）层14和厚度为25nm的无掺杂铝镓氮（AlGaN）层15构成。无掺杂GaN层14和无掺杂AlGaN层15依次设置在缓冲层12上。二维电子气（2DEG）在无掺杂GaN层14和无掺杂AlGaN层15的界面区域产生，形成沟道区域。
图1和图2示出了源极孤岛17和漏极孤岛18相互间隔地设置在氮化物半导体层13上。为减小接触电阻，去除了源极17和漏极18区域中的无掺杂AlGaN层15和一部分无掺杂GaN层14，以使源极17和漏极18低于无掺杂GaN层14和无掺杂AlGaN层15的界面。源极17和漏极18由钛（Ti）和铝（Al）制成。
如图2所示，源极17和漏极18之间的长条中设有厚度为200nm的P-型AlGaN层20。由钯（Pb）制成的栅极19则设在P-型AlGaN层20上。
由相邻源极17和漏极18构成的这一区域称作有源界面区域30，其中，栅极设在氮化物半导体层13沟道区域中17和18之间。
图1和图2所示的氮化物半导体为多孤岛场效应晶体管（FET）。具体而言，各个矩形源极孤岛17和矩形漏极孤岛18具有多个有源界面区域30。
第一绝缘层22堆焊在栅极19和有源界面区域30的上面，以便于在栅极上设置凸起源场极板24。场极板24在下一步的镀金互连过程中制成。此外，第一绝缘层22还为源极镀金互连和栅极19之间提供绝缘。
如图3所示，多个孤岛源极17由1至50个孤岛组相互电气连接在一起形成一个具有共用电互连点的源极组31，该电互连点用源极金凸块34制成。
如图3所示，多个孤岛漏极18由1至50个孤岛组相互电气连接在一起形成一个具有共用电互连点的漏极组32，该电互连点用源极金凸块35制成。
如图4所示，多个栅极19由1至50个孤岛组相互电气连接在一起形成栅极组33。另外，这些栅极组33用镀金线37在整个器件中进行电气连接。所述镀金线37用栅极金凸块36进行端接。栅极镀金线38与源极金属线垂直，其电势相近，从而减少了栅极和漏极线之间所需击穿电压问题。
多个源极组31、漏极组32和栅极组33以可相对各个漏极18、源极17依次颠倒的方式设置，其中，栅极19位于17和18两者之间。
孤岛电极通过通孔和厚度为1μm、宽度为3-4μm的镀金线进行电气连接，具有一层镀金或多层镀金且每层均设置防剥离掩膜。采用多层镀金可提高器件产量，并减少生产过程中金属剥离的问题。
源极金凸块34、漏极金凸块35和栅极金凸块36的电互连点在整个器件上为漏极、源极和栅极提供分散的电流收集点，可大大消除了其它功率电子半导体器件中存在的不同压降变化和电迁移问题，并允许使用标准的镀金厚度和传统的线宽，从而可避免使用多个典型模具区域宽度的收集线和焊盘，但仍可在单个器件表面上提供所有互连点。
第二绝缘层23在源极和漏极镀金线37制成后堆焊而成，为源极镀金线和栅极镀金线之间提供绝缘。蚀刻的通孔用于栅极收集点39和栅极镀金线38之间的电气连接，如图4a所示。
第三绝缘层25在栅极镀金线制成后堆焊而成，以保护模具以防止其被氧化。所有金凸块源极、漏极和栅极处蚀刻的通孔用于镀金线和多个源极、漏极和栅极金凸块34、35、36之间的电气连接，如图4a所示。
图5所示为沿图1中V-V线截取的截面结构的一部分。图5为所示的金凸块34、35的例子。现有金凸块技术的现状（容易获得）对凸块中心间的间距有限制；这限制了器件上金凸块的位置间距。本发明对无金凸块无间距限制，考虑在每个孤岛上设置一个金凸块，无需再用镀金线37进行孤岛间电气连接，这样每个区域可获得最大的栅极宽度。然而，根据现有金凸块技术，可行器件的每个金凸块通常可具有含有24至48个孤岛电极的极组。若需要更大的金凸块间距，可制作更大的极组。
采用所述多孤岛结构可使氮化物半导体器件具有较大的栅极宽度（Wg），从而可承受大电流运转的大功率器件。第一、第二和第三绝缘层22、23和25通常由氮化硅（SiN）制成，厚度为1μm。
上述示例不限于使用金属进行互连，考虑到减小成本、电流错乱、集中应力和电迁移这些因素，还可使用其它材料（如硅化物/多晶硅）替代金属互连和接点系统。
硅碳（SiC）衬底可用作衬底11，其取向应使其界面与缓冲层12之间的晶格失配最少。但衬底并不仅限于SiC，任何不导电且氮化物半导体层可设置在其上的衬底均可使用。
上述示例为增强型FET，通过未在生产过程中纳入P-型AlGaN层20，可使本实施例的一种变型适用于耗尽型FET。
不限于使用金凸块进行外部互连。还可使用贯穿衬底的通孔来替代金凸块对FET的源极或漏极进行电气连接，或对二极管的阳极或阴极进行电气连接。导电衬底11适用于使用贯穿衬底的通孔的器件。
下述示例的尺寸对本发明的范围不构成限制，仅用作提供进一步说明。第一和第二孤岛电极以矩形为主，边长为18μm，相邻电极间的横向间距为8μm。源极和漏极的每个金凸块连接均可使用24个孤岛电极的极组，其中有源段的栅极组为50个。
实施例2
下文参考附图对另一实施例进行描述。图6为另一实施例的氮化物半导体器件的平面结构。图7为沿图6中线VII-VII截取的截面图的一部分。
如图6和图7所示，第二个实施例的氮化物半导体器件具有一个设在不导电硅（SiC）衬底61上的氮化物半导体层63，缓冲层62设在两者之间。氮化物半导体层63由厚度为1μm的无掺杂氮化镓（GaN）层64和厚度为25nm的无掺杂铝镓氮（AlGaN）层65构成。无掺杂GaN层64和无掺杂AlGaN层65依次设置在缓冲层62上。二维电子气（2DEG）在无掺杂GaN层64和无掺杂AlGaN层65的界面区域产生。
阳极孤岛67和阴极孤岛68相互间隔地设在氮化物半导体层63上。阴极孤岛67可由钛（Ti）和铝（Al）制成并低于无掺杂AlGaN层65和无掺杂GaN层64之间的界面。阳极孤岛68可由钯（Pd）制成并与无掺杂AlGaN层65的顶面接触。
本实施例中，氮化物半导体层63中阴极孤岛67和阳极孤岛68相邻设置的区域称作有源界面区域30。
本实施例的氮化物半导体器件为多孤岛二极管。具体而言，每个矩形阴极孤岛67和矩形阳极孤岛68均具有多个有源界面区域30。
第一绝缘层72堆焊在有源界面区域30的上面，以便于设置凸起阳极场极板74。场极板74在下一步的镀金互连过程中制成。
多个阴极孤岛67用镀金线87由1至50个孤岛组相互电气连接在一起形成一个具有共用电互连点的阴极组81，该电互连点用阴极金凸块84制成。
多个阳极孤岛68用镀金线87由1至50个孤岛组相互电气连接在一起形成一个具有共用电互连点的阳极组82，该电互连点用阳极金凸块85制成。
多个阴极组81和阳极组82以可相对各个阴极67和阳极68依次颠倒的方式设置，从而使有源界面区域30的数量达到最多。
孤岛电极间的电气连接、金凸块技术、本例中所使用的贯穿衬底的通孔以及衬垫均与第一个示例中所使用的相同，第一个示例中所述的相同扩展部分同样适用于本例。
本结构可使本例的氮化物半导体的阴极和阳极之间具有较大的共用有源界面，从而可承受大电流运转的大功率器件。
第二绝缘层73设在该器件除阴极金凸块84和阳极金凸块85所在区域以外的其它位置。第二绝缘层73用于稳定该器件的表面，由氮化硅（SiN）制成，厚度为1μm。
可使用三角形的电极孤岛（67、68）来替代第一和第二示例中所述的矩形孤岛电极结构，如图8的平面图所示，图8示出了氮化物半导体二极管的一部分。栅极设在源极和漏极孤岛之间的其它类似结构也在本发明范围内。
实施例3
下文将参考附图对另一示例性实施例进行描述。本实施例形成的过程与前两例中的过程类似。图9为第三个实施例的氮化物半导体器件的一部分平面结构的平面图，其中，多个简单矩形孤岛电极采用齿形（细圆齿状）。第一电极孤岛的齿形半岛91与第二电极孤岛的齿形半岛92交错设置，以增大各种电极的有源界面区域30。第一和第二电极间的这些有源界面区域内，第三条形电极93堆焊成氮化物晶体管的栅极。
电极孤岛的齿形半岛间不设栅极的类似二极管结构也在本发明范围内。
齿形半岛91和92（图9中所示为矩形）也可采用锥形四边形的形状以解决与任何大电流应用相关的电迁移问题。另外，沿齿形半岛的中心可为金的或其它金属，以提高其电流处理能力。采用图9所示结构制成的晶体管相比采用较小电极间距的实用低电压半导体实现品的简单孤岛结构，其导通电阻要小两至三倍。
图9所示结构非常适合于使用金凸块的倒装芯片电极电气连接，如前所述。采用多个金或其它导电金属与栅极以固定间隔进行电气连接94，大大提高了此类氮化物晶体管的开关速度并缩短了开关延迟时间。
可使用带有齿形半岛的三角形电极孤岛形状来替代第三个实施例中所述的矩形孤岛电极结构，并通过设置或不设置栅极来构成晶体管或二极管。
第三个实施例中所述的齿形半岛的另一种更改：如图10所示，可通过将齿形半岛从相邻的孤岛电极延伸至区域95来形成另外的多个有源界面区域30。这样可另外增加栅极长度和电流处理能力达25%。通常，增加的量不足以形成较宽的、可处理来自交错的附加半岛91、92的电流的半岛96。所形成的半导体器件可通过设置栅极或不设置栅极来制成晶体管或二极管。二极管应用中，或晶体管栅极速度不是关键因素的案例中，若其他无源区域97不需要栅极连接，它也可用于附加半岛，因此电流处理能力可提高近50%。
如上所述，本发明所公开的为一系列整体区域较小、但可提供整体区域内所有电极连接和实际装置的所有安装方式、同时还能获得最大的有用有源区的装置的实施方式。以此种方式制成的二极管和晶体管在缩小功率系统尺寸的同时还可降低生产成本。
应了解的是，本发明并不限于此处所述的特定实施例，还包括各种更改、重新布置、代替，本领域的技术人员应明白这一点。
权利要求书(按照条约第19条的修改)
1.一种氮化物半导体器件，包括：
a）衬底：
b）氮化物半导体层，设在衬底主表面上且具有一个沟道区域，电子在平行于主表面的方向上在沟道区域内流动；
c）多个第一孤岛电极和多个第二孤岛电极，相互间隔交替布置以在氮化物半导体层产生二维有源区的多样性；
d）绝缘膜，设在氮化物半导体层上，具有多个显露第一和第二孤岛电极和任何共用电极接头区域的开口；以及
e）多个球形或凸块接头，设在多个显露各自第一和第二孤岛电极的开口。
2.根据权利要求1所述的氮化物半导体器件，其中，设置多个贯穿衬底的通孔，其中，第一或第二孤岛电极或共用电极接头区域不使用球形或凸块接头连接。
3.根据权利要求2所述的氮化物半导体器件，其中，较大的单电极共用焊盘可设在多个贯穿衬底的通孔的基部处，或与第一或第二孤岛电极或共用电极的顶部相连，以在衬底主表面的对侧提供单电极。
4.根据权利要求1所述的氮化物半导体器件，其中，第一和第二孤岛电极为矩形。
5.根据权利要求1所述的氮化物半导体器件，其中，第一和第二孤岛电极为三角形。
6.根据权利要求1所述的氮化物半导体器件，其中，所述孤岛结合使用了各种多边形以使有源区的使用最优化。
7.根据权利要求1所述的氮化物半导体器件，其中，
a）单层或多层金属，便于多个第一孤岛电极电气连接至共用第一电极金凸块接头上；及
b）单层或多层金属，便于多个第二孤岛电极电气连接至共用第二电极金凸块接头上。
8.根据权利要求7所述的氮化物半导体器件，其中，两层金属可用于在第一和第二电极及其接头之间提供高压应力分离。
9.根据权利要求7所述的化物半导体器件，其中，通过剥离去除金属层。
10.根据权利要求1所述的氮化物半导体器件，其中，衬底导电，从第一电极顶部或第二电极顶部或共用接头其中之一的顶部的通孔接头，以连接至晶片的后面或底部。
11.根据权利要求1所述的氮化物半导体器件，其中，用硅化物/多晶硅互连和接点系统替代金属互连和接点系统。
12.根据权利要求1所述的氮化物半导体器件，其中，阳极由两层功能不同的金属层制成。
13.根据权利要求1所述的氮化物半导体器件，其中，多个第一孤岛电极具有多个从其各侧伸出的齿形半岛，所述齿形半岛与从多个第二孤岛电极各侧伸出的多个齿形半岛交错。
14.一种氮化物半导体器件，包括：
a）衬底：
b）氮化物半导体层，设在衬底主表面上且具有沟道区域，电子在平行于主表面的方向上在沟道区域内流动；
c）多个第一孤岛电极和多个第二孤岛电极，相互间隔交替布置以在氮化物半导体层产生二维有源区；
d）多个第三条形电极，设在氮化物半导体层上各个第一孤岛电极和第二孤岛电极之间的区域，充当多孤岛场效应晶体管的栅极，其中，各个孤岛电极为场效应晶体管的漏极或源极；
e）绝缘膜，设在氮化物半导体层上，具有多个显露第一、第二、第三电极和/或任何共用电极接头区域的开口，通过对第一和第二和第三电极进行电气连接形成；以及
f）多个球形或凸块接头，设在显露各自第一和第二和第三和任何共用电极接头区域的多个开口上。
15.根据权利要求14所述的氮化物半导体器件，其中，在栅极下堆焊一层P-型AlGaN材料以制成一个增强型器件。
16.根据权利要求14所述的氮化物半导体器件，其中，在栅极下堆焊一层P-型GaN材料以制成一个增强型器件。
17.根据权利要求14所述的氮化物半导体器件，其中，
a）多个第一孤岛电极具有多个从其各侧伸出的齿形半岛，所述齿形半岛设在从多个第二孤岛电极各侧伸出的多个齿形半岛内；
b）多个第三条形电极，设在氮化物半导体层上的第一孤岛电极的齿形半岛核第二孤岛电极的齿形半岛之间的区域，充当多孤岛场效应晶体管的栅极；
其中，各个孤岛电极为场效应晶体管的漏极或源极。
18.一种氮化物半导体器件，包括：
a）衬底：
b）氮化物半导体层，设在衬底主表面上且具有沟道区域，电子在平行于主表面的方向上在沟道区域内流动；
c）多个第一孤岛电极和多个第二孤岛电极，相互间隔交替布置以在氮化物半导体层产生二维有源区；
d）多个第三条形电极，设在氮化物半导体层上各个第一孤岛电极和第二孤岛电极之间的区域，充当多孤岛场效应晶体管的栅极，其中，各个孤岛电极为场效应晶体管的漏极或源极；
e）绝缘膜，设在氮化物半导体层上，具有多个显露第一、第二、第三电极或任何共用电极接头区域的开口，通过对第一或第二或第三电极进行电气连接形成；以及
f）多个球形或凸块接头，设在显露各自第一或第二或第三或任何共用电极接头区域的多个开口上。

Claims (17)

1.一种氮化物半导体器件，包括：
a）衬底；
b）氮化物半导体层，设在衬底主表面上且具有沟道区域，电子在平行于主表面的方向上在沟道区域内流动；
c）多个第一孤岛电极和多个第二孤岛电极，相互间隔交替布置以在氮化物半导体层的所有可行区产生二维有源区的多样性；
d）绝缘膜，设在氮化物半导体层上，具有多个显露第一和/或第二孤岛电极和/或任何共用电极接头区域的开口；以及
e）多个球形或凸块接头，设在显露各自第一和/或第二孤岛电极的多个开口上。
2.根据权利要求1所述的氮化物半导体器件，其中，第一或第二孤岛电极或共用电极连接区域不是使用球形或凸块接头进行连接的位置设置多个贯穿衬底的通孔的接头。
3.根据权利要求2所述的氮化物半导体器件，其中，一个较大的单电极共用焊盘可设在多个贯穿衬底的通孔的基部处，或连接在第一或第二孤岛电极或共用电极的顶部，从而在衬底主表面的对侧上提供单电极。
4.根据权利要求1所述的氮化物半导体器件，其中，第一和第二孤岛的电极为矩形。
5.根据权利要求1所述的氮化物半导体器件，其中，第一和第二孤岛电极为矩形。
6.根据权利要求1所述的氮化物半导体器件，其中，所述孤岛结合使用了各种多边形以使有源区的使用最优化。
7.根据权利要求1所述的氮化物半导体器件，其中，
a）单层或多层金属，便于多个第一孤岛电极电气连接至共用第一电极金凸块接头上，及
b）单层或多层金属，便于多个第二孤岛电极电气连接至共用第二电极金凸块接头上。
8.根据权利要求7所述的化物半导体器件，其中，两层金属可用于在第一和第二电极和/或其接头之间提供高压应力分离。
9.根据权利要求7所述的化物半导体器件，其中，通过剥离去除金属层。
10.根据权利要求1所述的氮化物半导体器件，其中，衬底导电，从第一电极顶部或第二电极顶部或共用接头中的一个接头的通孔连接，以连接至晶片的后面或底部。
11.根据权利要求1所述的氮化物半导体器件，其中，用硅化物/多晶硅互连和接点系统替代金属互连和接点系统。
12.根据权利要求1所述的氮化物半导体器件，其中，阳极由两层功能不同的金属层制成。
13.根据权利要求1所述的氮化物半导体器件，其中，多个第一孤岛电极具有多个从其各侧伸出的齿形半岛，所述齿形半岛与从多个第二孤岛电极各侧伸出的多个齿形半岛交错。
14.一种氮化物半导体器件，包括：
a）衬底：
b）氮化物半导体层，设在衬底主表面上且具有沟道区域，电子在平行于主表面的方向上在沟道区域内流动；
c）多个第一孤岛电极和多个第二孤岛电极，相互间隔交替布置以在氮化物半导体层的所有可行区产生二维有源区；
d）多个第三条形电极，设在氮化物半导体层上各个第一孤岛电极和第二孤岛电极之间的区域，充当多孤岛场效应晶体管的栅极，其中，各个孤岛电极为场效应晶体管的漏极或源极；
e）绝缘膜，设在氮化物半导体层上，具有多个显露第一、第二、第三电极和/或任何共用电极接头区域的开口，通过对第一和/或第二和/或第三电极进行电气连接形成；
f）多个球形或凸块接头，设在显露各自第一和/或第二和/或第三和/或任何共用电极接头区域的多个开口上。
15.根据权利要求14所述的氮化物半导体器件，其中，在栅极下堆焊一层P-型AlGaN材料以制成增强型器件。
16.根据权利要求14所述的氮化物半导体器件，其中，在栅极下堆焊一层P-型GaN材料以制成增强型器件。
17.根据权利要求14所述的氮化物半导体器件，其中，
a）多个第一孤岛电极具有多个从其各侧伸出的齿形半岛，所述齿形半岛设在从多个第二孤岛电极各侧伸出的多个齿形半岛内；
b）多个第三条形电极，设在氮化物半导体层上的第一孤岛电极的齿形半岛核第二孤岛电极的齿形半岛之间的区域，充当多孤岛场效应晶体管的栅极；
其中，各个孤岛电极为场效应晶体管的漏极或源极；
本权利要求书及其用语应根据上述的变体进行理解；本权利要求书及其用语并不限于此类变体，但应理解为涵盖本发明暗含的全部范围。
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