CN102893392B - 采用孤岛拓扑结构的高密度氮化镓器件 - Google Patents

采用孤岛拓扑结构的高密度氮化镓器件 Download PDF

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CN102893392B
CN102893392B CN201180020410.7A CN201180020410A CN102893392B CN 102893392 B CN102893392 B CN 102893392B CN 201180020410 A CN201180020410 A CN 201180020410A CN 102893392 B CN102893392 B CN 102893392B
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nitride semiconductor
island
electrode
electrodes
semiconductor device
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CN102893392A (zh
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约翰·罗伯茨
阿哈默德·米桑
格文·帕特森
格雷格·克洛维克
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GaN Systems Inc
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201180020410.7A 2010-04-13 2011-04-13 采用孤岛拓扑结构的高密度氮化镓器件 Active CN102893392B (zh)

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US32347010P 2010-04-13 2010-04-13
US61/323,470 2010-04-13
PCT/CA2011/000396 WO2011127568A1 (en) 2010-04-13 2011-04-13 High density gallium nitride devices using island topology

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CN102893392A CN102893392A (zh) 2013-01-23
CN102893392B true CN102893392B (zh) 2015-08-05

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US (1) US8791508B2 (enExample)
EP (1) EP2559064A4 (enExample)
JP (1) JP6096109B2 (enExample)
KR (1) KR20130088743A (enExample)
CN (1) CN102893392B (enExample)
AU (1) AU2011241423A1 (enExample)
CA (1) CA2796155C (enExample)
WO (1) WO2011127568A1 (enExample)

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KR102052307B1 (ko) * 2011-11-09 2019-12-04 스카이워크스 솔루션즈, 인코포레이티드 전계 효과 트랜지스터 구조 및 관련된 무선-주파수 스위치
US8921986B2 (en) * 2013-03-15 2014-12-30 Microchip Technology Incorporated Insulated bump bonding
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WO2015096605A1 (zh) * 2013-12-23 2015-07-02 梁嘉进 分裂栅功率半导体场效应晶体管
GB201418752D0 (en) * 2014-10-22 2014-12-03 Rolls Royce Plc Lateral field effect transistor device
CN104617092B (zh) * 2014-11-06 2018-06-22 苏州捷芯威半导体有限公司 一种半导体器件及其制作方法
FR3040539B1 (fr) 2015-08-28 2018-03-09 Stmicroelectronics (Tours) Sas Diode schottky haute tension a nitrure de gallium
US10403624B2 (en) 2017-05-26 2019-09-03 Stmicroelectronics Design And Application S.R.O. Transistors with octagon waffle gate patterns
US10147796B1 (en) * 2017-05-26 2018-12-04 Stmicroelectronics Design And Application S.R.O. Transistors with dissimilar square waffle gate patterns
US10529802B2 (en) 2017-09-14 2020-01-07 Gan Systems Inc. Scalable circuit-under-pad device topologies for lateral GaN power transistors
US10218346B1 (en) 2017-09-14 2019-02-26 Gan Systems Inc. High current lateral GaN transistors with scalable topology and gate drive phase equalization
CN109994456A (zh) * 2017-12-30 2019-07-09 镓能半导体（佛山）有限公司 一种氮化镓器件及氮化镓封装结构
IT201800010195A1 (it) 2018-11-09 2020-05-09 St Microelectronics Srl Dispositivo elettronico a conduzione laterale basato su gan con layout degli strati metallici migliorato
US11515235B2 (en) 2020-10-30 2022-11-29 Gan Systems Inc. Device topology for lateral power transistors with low common source inductance
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