WO2011086850A1 - Ntcサーミスタ用半導体磁器組成物およびntcサーミスタ - Google Patents
Ntcサーミスタ用半導体磁器組成物およびntcサーミスタ Download PDFInfo
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- H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
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- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/148—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals embracing or surrounding the resistive element
Definitions
- the present invention relates to an NTC thermistor semiconductor ceramic composition and an NTC thermistor, and more particularly to an NTC thermistor semiconductor ceramic composition containing Mn, Ni and Fe, and an NTC thermistor formed using the same.
- NTC thermistors are known to be used for applications such as temperature compensation or temperature detection.
- NTC thermistors are known to be used for applications such as temperature compensation or temperature detection.
- the characteristics of NTC thermistors themselves be narrowed. That is, for example, what was allowed if the deviation of the resistance value was within ⁇ 5% before is now required to be within ⁇ 1 to 0.5%.
- the NTC thermistor is left at a high temperature such as 125 ° C. and further at a high temperature such as 175 ° C. for in-vehicle use, its characteristics hardly change with time, and the manufacturing process.
- a high temperature such as 125 ° C.
- a high temperature such as 175 ° C.
- the characteristics of the NTC thermistor are affected by the variations in the conditions in the manufacturing process, particularly the variations in the firing temperature in the firing process. Easy to receive. For example, depending on the conditions of the firing furnace, the amount of the unburned chips that should be NTC thermistors (charge amount) and the placement in the furnace, the weather conditions on the day of operation of the firing furnace, etc., the unburned chips are affected. The firing temperature varies undesirably between the unfired chips, and as a result, the firing history of individual NTC thermistors is different from each other. For this reason, the obtained NTC thermistor may vary in characteristics such as a resistance value.
- the characteristics of the NTC thermistor have a tendency that the so-called firing temperature dependency is relatively large.
- Patent Document 2 discloses a thermistor composition containing manganese oxide, nickel oxide, iron oxide, and zirconium oxide, and the main component is manganese oxide. Containing a mol% in terms of Mn (where a is 45 to 95, excluding 45 and 95), and nickel oxide (100-a) mol% in terms of Ni, and 100% by weight of this main component
- the iron oxide is 0 to 55% by weight in terms of Fe 2 O 3 (excluding 0% by weight and 55% by weight)
- the zirconium oxide is 0 to 15% by weight in terms of ZrO 2 (however, (Excluding 0 wt% and 15 wt%).
- this composition has a low rate of change in resistance under the use of high temperature and high humidity, and can adjust the B constant on the low temperature side (25 to ⁇ 40 ° C.) over a wide range, thereby satisfying a wide range of requirements. It is said that it will be possible to cope with circuit design.
- Patent Document 2 in the example, as a sample 21 within the scope of the invention, a main component composed of Mn: 80.0 mol% and Ni: 20.0 mol%, and a main component A composition containing 10.0% by weight of Fe 2 O 3 with respect to 100% by weight (in other words, a composition containing 9.51 parts by mole of Fe with respect to 100 parts by mole of the main component) is disclosed, and also the invention As a sample 22 within the range, a composition containing Mn: 80.0 mol% and Ni: 20.0 mol%, and 30.0 wt% of Fe 2 O 3 with respect to 100 wt% of the main component (In other words, a composition containing 28.54 mole parts Fe with respect to 100 mole parts of the main component) is disclosed.
- the resistance value changed undesirably greatly in an environment at an ambient temperature of 175 ° C., and it was found that the reliability in a high temperature environment was lacking.
- the resistance value of the NTC thermistor is adjusted by heat treatment at a temperature of 250 to 500 ° C. after firing, according to the composition of the sample 22, the resistance adjustment Therefore, it has been found that a relatively high temperature is required, and therefore, the characteristic variation after the resistance adjustment operation tends to be large, so that it is difficult to obtain stable characteristics, and the yield can be lowered in this respect.
- an object of the present invention is to have a low firing temperature dependency and to reduce the variation in resistance value after the resistance adjustment operation, thereby improving the manufacturing yield, and in a high temperature environment.
- An object of the present invention is to provide a semiconductor ceramic composition for NTC thermistor which can reduce resistance fluctuation.
- Another object of the present invention is to provide an NTC thermistor configured using the above-described semiconductor ceramic composition.
- the semiconductor ceramic composition for an NTC thermistor according to the present invention contains Mn, Ni, and Fe.
- Mn, Ni, and Fe are used.
- the molar ratio is 70 to 80 mol% for Mn, 20 to 30 mol% for Ni, and when the total molar amount of Mn and Ni is 100 mol parts, the Fe content is 15 mol parts or more and It is characterized by being 25 mol parts or less.
- the above-mentioned semiconductor ceramic composition for NTC thermistor preferably further contains Co in a range of 2 to 40 parts by mole when the total molar amount of Mn and Ni is 100 parts by mole.
- the present invention is also directed to an NTC thermistor configured using the semiconductor ceramic composition.
- the NTC thermistor according to the present invention includes a component main body made of the above-described semiconductor ceramic composition, and first and second electrodes facing each other with at least a part of the component main body interposed therebetween.
- a semiconductor ceramic composition for an NTC thermistor having a low firing temperature dependency can be obtained. Accordingly, it is not necessary to strictly manage the temperature conditions during firing, and therefore it is possible to simplify the process management for manufacturing and improve the yield, thereby reducing the cost of NTC thermistor manufacturing. be able to.
- a semiconductor ceramic composition for NTC thermistor having a small resistance variation under a high temperature environment such as 125 ° C. or 175 ° C., that is, having high characteristic stability.
- the resistance fluctuation is small at a temperature of 125 ° C. or 175 ° C., it is applied in the resistance adjustment after firing.
- the resistance value can be easily changed at a relatively low temperature and in a relatively short time.
- the resistance value can be easily changed at a relatively low temperature and in a relatively short time, so that resistance variation after the heat treatment operation for resistance adjustment after firing is suppressed. can do. This also contributes to the improvement of the yield, and as a result, the cost of the NTC thermistor can be reduced.
- the breaking strength of the NTC thermistor can be improved.
- 1 is a cross-sectional view schematically showing a stacked NTC thermistor 1 configured using a semiconductor ceramic composition according to the present invention.
- 1 is a cross-sectional view schematically showing a single plate type NTC thermistor 21 constituted by using a semiconductor ceramic composition according to the present invention.
- the semiconductor ceramic composition according to the present invention is used, for example, in the laminated NTC thermistor 1 shown in FIG. 1 or the single-plate NTC thermistor 21 shown in FIG. First, the structure of the stacked NTC thermistor 1 and the single plate NTC thermistor 21 will be described with reference to FIGS.
- the stacked NTC thermistor 1 includes a substantially rectangular parallelepiped component body 2.
- the component body 2 has a laminated structure composed of a plurality of layers 3, and internal electrodes 4 and 5 are formed between the specific layers 3.
- the internal electrodes 4 and 5 are classified into a first internal electrode 4 and a second internal electrode 5, and the first internal electrode 4 and the second internal electrode 5 are alternately arranged in the stacking direction.
- a structure is provided in which the first and second internal electrodes 4 and 5 are opposed to each other with a part of the component body 2 interposed therebetween.
- a first external electrode 8 is formed on one end surface 6 of the component body 2, and a second external electrode 9 is formed on the other end surface 7 of the component body 2.
- These external electrodes 8 and 9 are formed, for example, by baking a conductive paste containing Ag as a conductive component.
- the aforementioned first internal electrode 4 is drawn out to one end face 6 of the component main body 2, where it is electrically connected to the first external electrode 8, and the second internal electrode 5 is connected to the other end of the component main body 2. Is pulled out to the end face 7, where it is electrically connected to the second external electrode 9.
- first plating films 10 and 11 made of, for example, Ni are formed as necessary. Further, a second plating film made of, for example, Sn is formed thereon. Plating films 12 and 13 are formed.
- the single plate type NTC thermistor 21 includes a substantially rectangular plate-shaped component main body 22, and the first and second components are opposed to each other with the component main body 22 interposed therebetween. Electrodes 23 and 24 are formed.
- the component bodies 2 and 22 are composed of the semiconductor ceramic composition according to the present invention.
- the semiconductor ceramic composition for an NTC thermistor according to the present invention contains Mn, Ni, and Fe, and the molar ratio of each element when Mn and Ni are combined to be 100 mol% is Mn 70 to 80 mol%, Ni is 20 to 30 mol%, and the total molar amount of Mn and Ni is 100 mol parts, the Fe content is 15 mol parts or more and 25 mol parts or less.
- the semiconductor ceramic composition having such a composition has low firing temperature dependency and can reduce the variation in resistance value after the resistance adjustment operation. Therefore, the production yield of the NTC thermistors 1 and 21 is low. Can be improved. Further, the resistance fluctuation of the NTC thermistors 1 and 21 under a high temperature environment can be reduced.
- the semiconductor ceramic composition constituting the component bodies 2 and 22 further contains Co in a range of 2 to 40 parts by mole when the total molar amount of Mn and Ni is 100 parts by mole. If so, the breaking strength of the NTC thermistors 1 and 21 can be improved.
- Mn 3 O 4 , Fe 2 O 3 and NiO powders, and if necessary, Co 3 O 4 powders are prepared, and a predetermined amount of these powders are weighed.
- the weighed product is put into a ball mill and sufficiently wet pulverized with a pulverizing medium made of zirconia or the like, and then calcined at a predetermined temperature to produce a ceramic powder.
- a predetermined amount of an organic binder and water are added to the ceramic powder, and a wet mixing process is performed to form a slurry. Thereafter, a molding process is performed using a doctor blade method or the like. A ceramic green sheet to be formed is prepared.
- a conductive paste mainly composed of Ag—Pd is used, and screen printing is performed on the ceramic green sheet to form a conductive paste film to be the internal electrode 4 or 5.
- the raw laminated body which should become the component main body 2 of a laminated structure is produced by crimping
- the raw laminate is cut into a predetermined size as necessary, and then accommodated in, for example, a zirconia cage and subjected to a binder removal treatment at a temperature of 300 to 500 ° C., for example, 1100 to A firing process is performed at a predetermined temperature in the range of 1200 ° C. to obtain the component main body 2.
- a conductive paste mainly composed of Ag for example, is applied to both end faces 6 and 7 of the component body 2 and baked to form external electrodes 8 and 9.
- the component body 2 on which the external electrodes 8 and 9 are formed is heat-treated at a temperature of, for example, 250 to 500 ° C. as necessary to adjust the resistance.
- the heat treatment temperature and time are changed according to the desired resistance change amount.
- first plating films 10 and 11 made of, for example, Ni are formed on the surfaces of the external electrodes 8 and 9 by electrolytic plating, and then second plating films 12 and 13 made of, for example, Sn are formed.
- the external electrodes 8 and 9 are only required to have good adhesion to the component main body 2 and may be formed by a thin film forming method such as a sputtering method or a vacuum deposition method.
- oxides such as Mn 3 O 4 , Fe 2 O 3 , Co 3 O 4 and NiO were used.
- Mn, Fe, Co and Ni carbonates, hydroxides and the like were used. It can also be used.
- a ceramic powder is produced in the same manner as in the case of the multilayer NTC thermistor 1, and then this is made into a slurry. After that, a molding process is performed using a doctor blade method or the like to produce a ceramic green sheet, and then the ceramic green sheets are stacked and pressure-bonded so as to obtain a predetermined thickness, whereby the component main body 22 is obtained. A ceramic green compact to be obtained is obtained.
- a conductive paste containing Ag—Pd as a main component is used, and screen printing is performed on both sides of the ceramic green molded body to form a conductive paste film to be the electrode 23 or 24.
- the ceramic green molded body on which the conductive paste film is formed is cut into a predetermined size, if necessary, and then accommodated in, for example, a zirconia cage and subjected to a binder removal treatment.
- Baking treatment is performed at a predetermined temperature in the range of 1200 ° C.
- the resistance is adjusted by heat treatment at a temperature of 250 to 500 ° C. for a predetermined time.
- the weighed product was put into a ball mill and sufficiently wet pulverized with a zirconia pulverizing medium, and then calcined at a temperature of 730 ° C. for 2 hours to produce a ceramic powder.
- a conductive paste containing Ag—Pd as a main component was used, and screen printing was performed on both sides of the ceramic green molded body to form a conductive paste film.
- the ceramic green molded body on which the conductive paste film is formed is cut so as to have a planar size of 2.0 mm ⁇ 2.0 mm, and then accommodated in a zirconia basket, and at a temperature of 350 ° C. for 8 hours.
- the baking process was given at the predetermined temperature and the sample of the single plate type NTC thermistor was obtained.
- each NTC thermistor obtained by firing at each temperature at room temperature (25 ° C.).
- the resistance value that is, the resistance value R 25 at 1100 ° C. firing (1100 ° C.) and the resistance value R 25 at 1150 ° C. firing (1150 ° C.) were measured by a four-terminal method.
- the NTC thermistor obtained at a firing temperature of 1125 ° C. was subjected to a resistance change rate before and after being left at 125 ° C. and 175 ° C. for 100 hours. That is, the resistance value R 25 (0 hour) at room temperature (25 ° C.) of the NTC thermistor before the high temperature standing test is obtained by the four-terminal method, and after being left for 100 hours at each temperature of 125 ° C. and 175 ° C.
- the sample number with * is a sample outside the scope of the present invention.
- the sample within the scope of the present invention is “ ⁇ R / ⁇ T (between 1100 and 1150 ° C.)” satisfies 1.0% / ° C. or less, About “ ⁇ R / R (125 ° C.)”, it is assumed that 1.0% or less is satisfied, As for “ ⁇ R / R (175 ° C.)”, it is assumed that it is 3.0% or less, About “R3CV after resistance adjustment”, it was assumed that it was 15.0% or less.
- Ni exceeds 30 mol% (“Mn” is less than 70 mol%).
- ⁇ R / ⁇ T (1100-1150 ° C.) exceeded 1.0%, indicating that the firing temperature dependency was high. This is presumably because the NiO rock salt phase was generated in the sintered body of the semiconductor ceramic composition.
- Co 3 O 4 powder is prepared, and these powders have a composition as shown in Table 2. Weighed.
- Table 2 each column of “Mn”, “Ni” and “Fe / (Mn + Ni)” is shown in the same display method as in Table 1, and in the column of “Co / (Mn + Ni)” The Co 3 O 4 content of Mn 3 O 4 and NiO when converted to 100 mol parts when converted to Mn and Ni, respectively, is shown as mol parts converted to Co.
- the same operation as in Experimental Example 1 was performed to produce a ceramic green sheet.
- the obtained plurality of ceramic green sheets were stacked so as to obtain a thickness of about 1.00 mm, and pressed to obtain a ceramic green molded body.
- the ceramic green molded body was cut so as to have a width of 3.0 mm and a length of 50 mm, and then housed in a zirconia cage and subjected to a binder removal treatment that was held at a temperature of 350 ° C. for 8 hours, and a temperature of 1125 ° C.
- a strip-shaped NTC thermistor sample was obtained.
- the fracture strength of the obtained NTC thermistors according to each sample was evaluated.
- “AUTOGRAPH (AG-I)” manufactured by Shimadzu Corporation was used, a three-point bending test was performed under the following test conditions, and the maximum load (P) at which the test piece was broken was measured.
- the fracture strength was calculated by the following equation (1) from the obtained maximum load (P) and the dimension (width: w, thickness: t) of the measured sample piece.
- the sample number with an asterisk (*) is a sample that is out of the preferred range for the Co content.
- the preferable range of Co content was prescribed
Abstract
Description
まず、セラミック素原料として、Mn3O4、Fe2O3およびNiOの各粉末を用意し、これらの粉末を、表1に示すような組成となるように秤量した。表1において、「Mn」および「Ni」の各欄には、Mn3O4とNiOとについて、それぞれ、MnおよびNiに換算したときの総モル量に対するモル量の百分率が示され、「Fe/(Mn+Ni)」の欄には、Mn3O4とNiOとの、それぞれ、MnおよびNiに換算したときの総モル量を100モル部としたときのFe2O3の含有量をFeに換算したモル部をもって示している。
ΔR/ΔT=[{R25(1150℃)-R25(1100℃)}/R25(1100℃)/(1150-1100)]×100
の式に基づいて算出した。その結果が表1の「ΔR/ΔT(1100-1150℃間)」の欄に示されている。
ΔR/R={R25(100時間)-抵抗値R25(0時間)}/抵抗値R25(0時間)
の式に基づいて算出した。その結果が、125℃放置については、表1の「ΔR/R(125℃)」、および175℃放置については、「ΔR/R(175℃)」の各欄に示されている。
R3CV=標準偏差/平均値×300
の式に基づいて算出した。その結果が表1の「抵抗調整後R3CV」の欄に示されている。
「ΔR/ΔT(1100-1150℃間)」については、1.0%/℃以下であることを満足するものとし、
「ΔR/R(125℃)」については、1.0%以下であることを満足するものとし、
「ΔR/R(175℃)」については、3.0%以下であることを満足するものとし、
「抵抗調整後R3CV」については、15.0%以下であることを満足するものとした。
実験例2では、Coの含有による破壊強度の向上の効果を確認した。
支点間距離(L):30mm
クロスヘッド速度:0.5mm/分
[式(1)]
(破壊強度)=3×P×L/(2×w×t2)
その結果が表2に示されている。
2,22 部品本体
4,5 内部電極
23,24 電極
Claims (3)
- Mn、NiおよびFeを含み、
MnとNiとを合わせて100モル%としたときのそれぞれの元素のモル比率は、Mnが70~80モル%、Niが20~30モル%であり、かつ、
MnとNiとの総モル量を100モル部としたとき、Feの含有量が15モル部以上かつ25モル部以下である、
NTCサーミスタ用半導体磁器組成物。 - MnとNiとの総モル量を100モル部としたとき、Coを2モル部以上かつ40モル部以下の範囲でさらに含有する、請求項1に記載のNTCサーミスタ用半導体磁器組成物。
- 請求項1または2に記載の半導体磁器組成物からなる部品本体と、前記部品本体の少なくとも一部を挟んで対向する第1および第2の電極とを備える、NTCサーミスタ。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2011549909A JPWO2011086850A1 (ja) | 2010-01-12 | 2010-12-28 | Ntcサーミスタ用半導体磁器組成物およびntcサーミスタ |
CN201080060023.1A CN102686532B (zh) | 2010-01-12 | 2010-12-28 | Ntc热敏电阻用半导体瓷器组合物及ntc热敏电阻 |
TW100100523A TWI433827B (zh) | 2010-01-12 | 2011-01-06 | NTC thermal resistors for semiconductor porcelain compositions and NTC thermal resistors |
US13/541,034 US8547198B2 (en) | 2010-01-12 | 2012-07-03 | Semiconductor ceramic composition for NTC thermistors and NTC thermistor |
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Cited By (2)
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CN102491756A (zh) * | 2011-11-16 | 2012-06-13 | 重庆仪表材料研究所 | 一种水热法制备纳米热敏粉体的方法 |
JP2017157274A (ja) * | 2016-02-29 | 2017-09-07 | 日立オートモティブシステムズ株式会社 | リチウムイオン電池モジュール |
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DE102016014130B3 (de) * | 2016-11-25 | 2017-11-23 | Isabellenhütte Heusler Gmbh & Co. Kg | Strommessvorrichtung |
KR102500653B1 (ko) * | 2018-05-04 | 2023-02-16 | 엘지이노텍 주식회사 | 액체 렌즈 제어 회로, 카메라 모듈 및 액체 렌즈 제어 방법 |
DE112019002421B4 (de) * | 2018-07-05 | 2023-12-07 | Murata Manufacturing Co., Ltd. | Keramikbauglied und elektronikvorrichtung |
EP3901115A1 (en) * | 2020-04-24 | 2021-10-27 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNO | A printable ntc ink composition and method of manufacturing thereof |
CN113896512A (zh) * | 2021-11-03 | 2022-01-07 | 句容市博远电子有限公司 | 用于制备ntc热敏电阻芯片的组合物及其制成的ntc热敏电阻 |
CN114455939B (zh) * | 2022-01-07 | 2022-11-01 | 广东风华高新科技股份有限公司 | 一种高阻值高b值的ntc热敏电阻材料及其制备方法 |
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US20120268234A1 (en) | 2012-10-25 |
JPWO2011086850A1 (ja) | 2013-05-16 |
CN102686532A (zh) | 2012-09-19 |
CN102686532B (zh) | 2014-05-28 |
TWI433827B (zh) | 2014-04-11 |
US8547198B2 (en) | 2013-10-01 |
TW201139326A (en) | 2011-11-16 |
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