WO2011071073A1 - 静電チャック装置 - Google Patents

静電チャック装置 Download PDF

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Publication number
WO2011071073A1
WO2011071073A1 PCT/JP2010/072008 JP2010072008W WO2011071073A1 WO 2011071073 A1 WO2011071073 A1 WO 2011071073A1 JP 2010072008 W JP2010072008 W JP 2010072008W WO 2011071073 A1 WO2011071073 A1 WO 2011071073A1
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WO
WIPO (PCT)
Prior art keywords
electrostatic chuck
heater
focus ring
temperature
cooling base
Prior art date
Application number
PCT/JP2010/072008
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
康晴 佐々木
健二 増澤
暁之 眞壁
守 小坂井
隆 佐藤
和典 石村
竜二 早原
仁 河野
Original Assignee
東京エレクトロン株式会社
住友大阪セメント株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京エレクトロン株式会社, 住友大阪セメント株式会社 filed Critical 東京エレクトロン株式会社
Priority to US13/513,380 priority Critical patent/US8981263B2/en
Priority to EP10835993.6A priority patent/EP2511950B1/en
Priority to KR1020127014889A priority patent/KR101465849B1/ko
Priority to CN201080056197.0A priority patent/CN102741996B/zh
Publication of WO2011071073A1 publication Critical patent/WO2011071073A1/ja
Priority to US14/640,353 priority patent/US9721822B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/338—Changing chemical properties of treated surfaces

Definitions

  • the present invention relates to an electrostatic chuck device, and more specifically, a high-frequency discharge type plasma in which a plasma is generated by applying a high frequency to an electrode and a plate-like sample such as a semiconductor wafer is subjected to plasma by this plasma.
  • the present invention relates to an electrostatic chuck device suitable for use in a processing apparatus. This application claims priority based on Japanese Patent Application No. 2009-280672 for which it applied to Japan on December 10, 2009, and uses the content here.
  • the processing gas is relatively low temperature.
  • a lot of plasma is used.
  • a high frequency discharge type plasma etching apparatus is used in an etching process of a semiconductor device using a silicon wafer.
  • a phenomenon occurs in which the etching characteristics in the central portion of the silicon wafer and the etching characteristics in the outer peripheral portion of the silicon wafer are different. Therefore, in order to make the etching characteristics of the silicon wafer uniform in the plane, an annular focus ring is disposed outside the silicon wafer so as to surround the silicon wafer.
  • a magnetron type plasma etching processing apparatus having a configuration in which a temperature detector is disposed in the vicinity of the inner surface of the focus ring without being exposed to the surface (patent) Reference 1).
  • the temperature of the focus ring is constantly detected by a temperature detector and the temperature of the focus ring is controlled, so that the temperature of the focus ring is controlled to be the same as that of the silicon wafer. Therefore, the difference in the surface reaction of radicals on the silicon wafer and the focus ring is suppressed, the fluctuation of the etching rate in the surface of the silicon wafer is suppressed, and the etching uniformity is improved.
  • the temperature rising rate on the surface of the focus ring due to the plasma irradiation is in the plane of the silicon wafer. Since it becomes slower than the temperature increase rate, the surface temperature of the focus ring is kept lower than the surface temperature of the silicon wafer in the initial stage of plasma irradiation. Also, in the final stage of plasma irradiation, the surface temperature of the focus ring becomes higher than the surface temperature of the silicon wafer, which causes a temperature difference between the focus ring and the silicon wafer. There was a problem that the in-plane temperature of the silicon wafer became unstable.
  • the present invention has been made in view of the above circumstances, and when applied to a processing apparatus such as a plasma etching apparatus, the temperature of a focus ring unit provided so as to surround a plate-like sample such as a silicon wafer is set. By adjusting, the temperature of the focus ring part during processing can be kept constant, and the temperature of the outer peripheral part of the plate-like sample can be stabilized, so that the etching characteristics in the plane of the plate-like sample are uniform. It is an object of the present invention to provide an electrostatic chuck device that can prevent the deposits from being deposited on the focus ring.
  • an annular focus ring portion provided so as to surround the electrostatic chuck portion, a focus ring, a ceramic plate, and a heater made of a nonmagnetic material. If the temperature of the focus ring part is adjusted, the temperature of the focus ring part during processing can be kept constant by adjusting the temperature of the focus ring part. The temperature of the outer periphery of a plate-like sample such as a wafer can be stabilized, so that the etching characteristics in the plane of the plate-like sample can be made uniform, and further, deposits are deposited on the focus ring. As a result, the present invention has been completed.
  • the electrostatic chuck device includes the following aspects. ⁇ 1> An electrostatic chuck portion in which one principal surface is a mounting surface on which a plate-like sample is placed and an internal electrode for electrostatic attraction is built in, and an annular focus provided so as to surround the electrostatic chuck portion A ring portion and a cooling base portion that is provided on the other main surface side of the electrostatic chuck portion and cools the electrostatic chuck portion and the focus ring portion, and the focus ring portion includes a focus ring, A ceramic plate provided between the focus ring and the cooling base portion, a heater portion made of a nonmagnetic material provided between the ceramic plate and the cooling base portion, and an electrode for supplying power to the heater portion An electrostatic chuck device comprising a portion.
  • the ceramic plate is an annular ceramic plate, a plurality of ceramic pieces obtained by dividing the annular ceramic plate in the circumferential direction, and a plurality of annular ceramic pieces obtained by dividing the annular ceramic plate in the radial direction.
  • the electrostatic chuck device according to ⁇ 1> comprising any one of the above.
  • the heater portion is fixed to the ceramic plate with a first insulating adhesive layer, fixed to the cooling base portion with a second insulating adhesive layer, and these first insulating adhesive layers
  • the electrostatic chuck device according to any one of ⁇ 1> to ⁇ 3>, wherein the electrostatic chuck device is insulated by an agent layer and a second insulating adhesive layer.
  • An insulating ceramic film or an insulating organic film is provided between the cooling base portion and the heater portion, ⁇ 1> to ⁇ 4>, Electrostatic chuck device.
  • ⁇ 6> The electrostatic chuck device according to any one of ⁇ 1> to ⁇ 5>, wherein a temperature measuring unit is provided in the focus ring portion.
  • the heater portion has an electric conductivity of 0.5 ⁇ 10 6 S / m or more and 20 ⁇ 10 6 S / m or less, and a thermal expansion coefficient of 0.1 ⁇ 10 ⁇ 6 / K or more and 100 ⁇ 10.
  • the electrostatic chuck device according to any one of ⁇ 1> to ⁇ 6>, which is ⁇ 6 / K or less.
  • ⁇ 8> The electrostatic chuck device according to any one of ⁇ 1> to ⁇ 7>, wherein the heater section is made of titanium or a titanium alloy.
  • ⁇ 9> The electrostatic chuck device according to any one of ⁇ 1> to ⁇ 8>, wherein the ceramic plate has an insulating property and has a thermal conductivity of 1 W / mK or more.
  • an annular focus ring portion is provided so as to surround the electrostatic chuck portion, and the focus ring portion is provided between the focus ring and the focus ring and the cooling base portion.
  • the heater is made of a non-magnetic material provided between the ceramic plate and the cooling base, and an electrode for supplying power to the heater.
  • the heater adjusts the temperature of the focus ring part.
  • the temperature of the focus ring part during processing can be kept constant. Therefore, the temperature of the outer peripheral portion of the plate-like sample such as a silicon wafer can be stabilized, and thus the etching characteristics in the plane of the plate-like sample can be made uniform.
  • the surface temperature of the focus ring can be adjusted with high accuracy, the temperature difference between the surface temperature of the focus ring and the surface temperature of the plate-like sample can be eliminated, and deposits are deposited on the focus ring. Accumulation can be prevented.
  • FIG. 1 is a cross-sectional view showing an electrostatic chuck device according to an embodiment of the present invention.
  • the electrostatic chuck device 1 is provided so as to surround the electrostatic chuck portion 2 and the electrostatic chuck portion 2.
  • An annular focus ring portion 3 and a cooling base portion 4 for cooling the electrostatic chuck portion 2 and the focus ring portion 3 are configured.
  • the electrostatic chuck unit 2 includes a circular dielectric layer 11 having an upper surface (one main surface) as a mounting surface for mounting a plate-like sample W such as a semiconductor wafer, and a lower surface (others) of the dielectric layer 11. And a circular insulating layer 12 having the same diameter as that of the dielectric layer 11 and being sandwiched between the dielectric layer 11 and the insulating layer 12 and having a smaller diameter than the dielectric layer 11 and the insulating layer 12.
  • the power supply terminal 15 is connected to the central portion and applies a DC voltage, and the cylindrical insulator 16 is insulated from the outside by covering the periphery of the power supply terminal 15.
  • Both the dielectric layer 11 and the insulating layer 12 are preferably ceramics having heat resistance, such as aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ), silicon nitride (Si 3 N 4 ), zirconium oxide ( ZrO 2 ), sialon, boron nitride (BN), ceramics made of one selected from silicon carbide (SiC), or composite ceramics containing two or more are preferred.
  • AlN aluminum nitride
  • Al 2 O 3 aluminum oxide
  • silicon nitride Si 3 N 4
  • zirconium oxide ZrO 2
  • sialon boron nitride
  • BN boron nitride
  • SiC silicon carbide
  • composite ceramics containing two or more are preferred.
  • the dielectric layer 11 is preferably made of a material having a particularly high dielectric constant that does not become an impurity with respect to the plate-like sample W to be electrostatically attracted because the upper surface 11a side is an electrostatic attracting surface.
  • a silicon carbide-aluminum oxide composite sintered body containing 4% by weight or more and 20% by weight or less of silicon carbide with the balance being aluminum oxide is preferable.
  • the internal electrode 13 for electrostatic attraction a plate-shaped ceramic having a conductivity of about 10 ⁇ m to 50 ⁇ m is used.
  • the volume specific resistance value of the internal electrode 13 for electrostatic attraction at the operating temperature of the electrostatic chuck apparatus 1 is preferably 1.0 ⁇ 10 6 ⁇ ⁇ cm or less, more preferably 1.0 ⁇ 10 4 ⁇ ⁇ cm. cm or less.
  • the conductive ceramics constituting the internal electrode 13 for electrostatic adsorption include silicon carbide (SiC) -aluminum oxide (Al 2 O 3 ) composite sintered body, tantalum nitride (TaN) -aluminum oxide (Al 2 O 3 ).
  • Examples include composite sintered bodies, tantalum carbide (TaC) -aluminum oxide (Al 2 O 3 ) composite sintered bodies, molybdenum carbide (Mo 2 C) -aluminum oxide (Al 2 O 3 ) composite sintered bodies, and the like.
  • the insulating material layer 14 is for joining and integrating the dielectric layer 11 and the insulating layer 12, and for protecting the electrostatic adsorption internal electrode 13 from plasma.
  • the material constituting the insulating material layer 14 is preferably an insulating material whose main component is the same as that of the dielectric layer 11 and the insulating layer 12.
  • the dielectric layer 11 and the insulating layer 12 are a silicon carbide-aluminum oxide composite sintered body. It is preferable to use aluminum oxide (Al 2 O 3 ).
  • the focus ring portion 3 includes a focus ring 21 made of an annular plate material having an inner diameter slightly larger than the diameter of the electrostatic chuck portion 2 and an outer diameter slightly larger than the outer diameter of the cooling base portion 4, and a lower surface of the focus ring 21.
  • An annular heat conductive sheet 22 whose inner diameter is the same as the inner diameter of the focus ring 21 and whose outer diameter is smaller than the outer diameter of the focus ring 21, and an inner diameter and an outer diameter that are adhered to the lower surface of the heat conductive sheet 22.
  • An annular ceramic ring (ceramic plate) 23 having a diameter substantially the same as that of the heat conductive sheet 22 and a non-magnetic material bonded to the lower surface of the ceramic ring 23 via a sheet-like (first) insulating adhesive layer 24
  • the heater 25 is composed of: a heater electrode 26 which is joined to the lower surface of the heater 25 and supplies power to the heater 25; and the periphery of the heater electrode 26 is covered to be insulated from the outside. It is constituted by a cylindrical heater insulator 27.
  • the focus ring portion 3 is bonded and fixed to the cooling base portion 4 via a (second) insulating adhesive layer 28.
  • the focus ring 21 is controlled so as to have the same temperature as the plate-like sample W in a processing step such as plasma etching.
  • the material of the focus ring 21 is, for example, polycrystalline silicon when used for oxide film etching. Silicon carbide or the like is preferably used.
  • the heat conductive sheet 22 is for transferring heat from the temperature controlled ceramic ring 23 to the focus ring 21, and a sheet having a high heat conductivity is preferably used.
  • the heat conduction sheet 22 In order for the heat conduction sheet 22 to keep good heat conduction between the focus ring 21 and the ceramic ring 23, the heat conduction sheet 22 is interposed between the focus ring 21 and the ceramic ring 23. It is necessary that the heat transfer coefficient is 500 W / m 2 K or more. Here, when the heat transfer coefficient is less than 500 W / m 2 K, the influence of the temperature rise of the focus ring 21 when a high frequency is applied becomes large, and the temperature control of the focus ring 21 by the heater 25 and the cooling base unit 4 becomes impossible. Is not preferable.
  • the ceramic ring 23 is an annular ceramic plate having insulating properties made of, for example, aluminum oxide (Al 2 O 3 ), quartz, etc., and its thermal conductivity is 1 W / mK or more. If the thermal conductivity is less than 1 W / mK, the heat from the heater 25 cannot be quickly transferred to the focus ring 21 via the thermal conductive sheet 22, and the surface temperature of the focus ring 21 and the electrostatic chuck portion A temperature difference occurs between the two surface temperatures. Therefore, the surface temperature of the plate-like sample W placed on the electrostatic chuck portion 2 becomes unstable, and as a result, the in-plane characteristics of the plate-like sample W subjected to various treatments cannot be made uniform. It is not preferable.
  • This ceramic ring 23 includes, in addition to the annular shape shown in FIG. 2, an arc-shaped ceramic piece obtained by dividing an annular ceramic plate into a plurality of circumferential directions, for example, arc-shaped ceramic pieces 23a to 23d shown in FIG.
  • ring-shaped ceramic pieces obtained by dividing a ring-shaped ceramic plate into a plurality of pieces in the radial direction for example, ring-shaped ceramic pieces 23e and 23f shown in FIG. 4 may be combined concentrically.
  • an adhesive having heat resistance in a temperature range of ⁇ 20 ° C. to 150 ° C. is preferably used.
  • a silicon resin, a silicon resin containing a filler such as alumina or aluminum nitride, An acrylic resin, an epoxy resin, etc. are suitable.
  • oxygen-based plasma a silicon resin having excellent plasma resistance against oxygen-based plasma is preferable.
  • the insulating adhesive layers 24 and 28 may be made of the same material or different materials. The shape may also be a sheet-like adhesive, or a liquid adhesive that is cured by heat or ultraviolet irradiation.
  • the insulating adhesive layer 24 is preferably a sheet-like epoxy resin
  • the insulating adhesive layer 28 is preferably a silicon resin.
  • the heater 25 controls the temperature of the focus ring 21 to the same temperature as the plate-like sample W by heating the temperature of the focus ring 21 to a predetermined temperature through the ceramic ring 23 at an arbitrary rate of temperature increase. It is.
  • the electric conductivity is preferably 0.5 ⁇ 10 6 S / m or more and 20 ⁇ 10 6 S / m or less, more preferably 0.9 ⁇ 10 6. S / m or more and 5 ⁇ 10 6 S / m or less.
  • the coefficient of thermal expansion is 0.1 ⁇ 10 ⁇ 6 / K. And preferably 100 ⁇ 10 ⁇ 6 / K or more, more preferably 0.1 ⁇ 10 ⁇ 6 / K or more and 20 ⁇ 10 ⁇ 6 / K or less, and further preferably 4 ⁇ 10 ⁇ 6 / K or more and 10 ⁇ . 10 ⁇ 6 / K or less.
  • the heater 25 When applied to a plasma processing apparatus using a high frequency (RF), the heater 25 needs to be a non-magnetic material so that when the high frequency (RF) is applied, the heater itself does not generate heat by the high frequency (RF).
  • a conductor made of a sheet-like nonmagnetic material is preferably used. Examples of such a conductor include titanium foil and titanium alloy foil.
  • the thickness of the heater 25 is preferably 200 ⁇ m or less, and more preferably 120 ⁇ m or less.
  • the thickness of the adhesive layer 28 can be reduced. Therefore, the exposed area of the insulating adhesive layer 28 on the exposed end surface can be reduced, and as a result, damage to the insulating adhesive layer 28 due to the plasma when the plasma is irradiated can be reduced. Can do.
  • the heater 25 is bonded to the lower surface of the ceramic ring 23 via the insulating adhesive layer 24, and is bonded and fixed to the cooling base portion 4 via the insulating adhesive layer 28. Without being in contact with the cooling base portion 4, the gap between the two is kept in a good state, and the gap is filled with an insulating adhesive. Therefore, the insulation between the ceramic ring 23 and the cooling base portion 4 can be kept good, and the thermal stress of the heater 25 can be reduced by the insulating adhesive layers 24 and 28.
  • the cooling base unit 4 is provided below the electrostatic chuck unit 2 and the focus ring unit 3, controls the temperature of the electrostatic chuck unit 2 and the focus ring unit 3 to a desired temperature, and generates a high frequency electrode. It is what combines.
  • the cooling base portion 4 is made of a metal having good thermal conductivity such as aluminum, and a flow path 31 for circulating a cooling medium such as water or an organic solvent is formed in the cooling base portion 4. The temperature of the plate-like sample W placed on the upper surface 11a can be maintained at a desired temperature.
  • a heater electrode 26 and a heater insulator 27 are fixed in a through hole 32 formed on the lower side of the heater 25 in the cooling base portion 4, and a through hole 33 formed in the central portion of the cooling base portion 4.
  • the power supply terminal 15 and the insulator 16 are fixed, and the light emitted from the ceramic ring 23 is received in the through hole 34 opposite to the through hole 32 with respect to the central axis of the cooling base portion 4.
  • an optical thermometer (temperature measuring means) 35 for directly measuring the temperature of the ceramic ring 23 is fixed.
  • the optical thermometer 35 may be configured to directly measure the temperature of the heater 25 or may be configured to directly measure the temperature of the focus ring 21.
  • a temperature controller 36 and a heater power source 37 are connected in series to the optical thermometer 35, and the heater power source 37 is connected to the heater electrode 26.
  • the temperature of the ceramic ring 23 can be directly known from the wavelength band of the light. it can.
  • the optical thermometer 35 converts the temperature value corresponding to this light into an electrical signal and outputs it to the temperature controller 36.
  • the temperature controller 36 outputs a control signal for controlling the power applied to the heater 25 to the heater power source 37 based on the electrical signal from the optical thermometer 35.
  • the heater power source 37 applies controlled electric power to the heater 25 based on a control signal output from the temperature controller 36, and controls the amount of heat radiated from the heater 25. Therefore, the focus ring 21 can be heated to a predetermined temperature by the heater 25 through the ceramic ring 23 at an arbitrary temperature increase rate, and this temperature can be maintained. Further, when the temperature of the focus ring 21 rises due to the plasma, the temperature rise of the focus ring unit 3 is suppressed by adjusting the output of the heater 25, and thus the temperature of the focus ring unit 3 is kept constant. be able to.
  • the interval between the cooling base portion 4 and the ceramic ring 23 is the sum of the insulating adhesive layer 24, the heater 25, and the insulating adhesive layer 28, that is, 100 ⁇ m to 500 ⁇ m.
  • the interval between the cooling base portion 4 and the ceramic ring 23 can be made extremely narrow, Therefore, the temperature of the focus ring 21 can be accurately controlled to a predetermined temperature via the ceramic ring 23.
  • the heating rate and cooling rate of the ceramic ring 23 when a predetermined current is passed through the heater 25, and the electrostatic chuck unit 2 can be made substantially coincident with each other, and therefore, the temperature raising rate and the cooling rate of the focus ring 21 can be made substantially coincident with those of the electrostatic chuck portion 2. it can.
  • the temperature of the focus ring 21 can be adjusted using the heater 25, and the temperature of the focus ring 21 during processing can be kept constant. Therefore, the temperature of the outer peripheral portion of the plate-like sample W such as a silicon wafer can be stabilized, and thus the etching characteristics in the plane of the plate-like sample W can be made uniform.
  • the surface temperature of the focus ring 21 can be adjusted with high accuracy, the temperature difference between the surface temperature of the focus ring 21 and the surface temperature of the plate-like sample W placed on the electrostatic chuck portion 2 is determined. Therefore, it is possible to prevent deposits from being deposited on the focus ring 21.
  • the heater 25 is provided between the ceramic ring 23 and the cooling base portion 4, stress on the ceramic ring 23 when the heater 25 generates heat is reduced. can do. Further, since the heater 25 is not embedded in the ceramic, the manufacturing process can be simplified and the manufacturing cost can be reduced.
  • the heater 25 is made of a non-magnetic material, there is no possibility of heat generation due to the high frequency even when a high frequency is applied to the heater 25. Therefore, self-heating can be avoided even when a high frequency is applied. Since the heater 25 is fixed to the ceramic ring 23 and the cooling base portion 4 via the insulating adhesive layers 24 and 28, the insulating adhesive layers 24 and 28 exist between the ceramic ring 23 and the cooling base portion 4. As a result, the thermal stress due to the thermal expansion of the heater 25 can be reduced, and the thermal stress due to the thermal expansion of the ceramic ring 23 and the cooling base portion 4 can also be reduced.
  • the optical thermometer 35 for directly measuring the temperature of the ceramic ring 23 is fixed in the through hole 34 of the cooling base portion 4, the heat of the ceramic ring 23 escapes to the cooling base portion 4 via the optical thermometer 35. Can be prevented. Further, since the temperature of the ceramic ring 23 is directly measured by the optical thermometer 35, there is no possibility of being affected by heat generated from the heater 25, and the temperature of the ceramic ring 23 itself can be measured accurately.
  • an insulating ceramic film or an insulating organic film may be provided between the cooling base portion 4 and the heater 25.
  • the heat conductive sheet 22 is provided between the focus ring 21 and the ceramic ring 23, helium gas or the like may be flowed instead of the heat conductive sheet 22.
  • the object of directly measuring the temperature with the optical thermometer 35 is not limited to the ceramic ring 23, and the temperature of the focus ring 21 or the heat conductive sheet 22 may be directly measured.
  • FIG. 5 is a cross-sectional view showing a modification of the electrostatic chuck device of the present embodiment.
  • the difference between the electrostatic chuck device 41 and the electrostatic chuck device 1 is that the cooling base portion is replaced with the electrostatic chuck portion.
  • the other points are exactly the same as the electrostatic chuck device 1 described above.
  • the cooling base portion 42 for cooling the electrostatic chuck portion 2 and the cooling base portion 43 for cooling the focus ring portion 3 are provided.
  • the electrostatic chuck unit 2 can be cooled by the cooling unit 42, and the focus ring unit 3 can be individually cooled by the cooling base unit 43, and the temperature controllability of the electrostatic chuck unit 2 and the focus ring unit 3 can be improved.
  • Electrostatic chuck apparatus 1
  • Electrostatic chuck part 2
  • Focus ring part 4
  • Cooling base part 11
  • Dielectric layer 11a Upper surface 12
  • Insulating layer 13 Electrostatic attracting internal electrode 14
  • Insulating material layer 15 Power supply terminal 16
  • Insulator 21 Focus ring 22
  • Thermal conduction Sheet 23 Ceramic ring (ceramic plate) 24 (First) Insulating Adhesive Layer 25
  • Heater 26 Heater Electrode 27
  • Heater Insulator 28 (Second) Insulating Adhesive Layer 31 Channel 32 to 34 Through-hole 35
  • Optical Thermometer Tempoture Measuring Means) 36
  • Temperature controller 37
  • Heater power supply 41
  • Electrostatic chuck device 42, 43 Cooling base section

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
PCT/JP2010/072008 2009-12-10 2010-12-08 静電チャック装置 WO2011071073A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US13/513,380 US8981263B2 (en) 2009-12-10 2010-12-08 Electrostatic chuck apparatus
EP10835993.6A EP2511950B1 (en) 2009-12-10 2010-12-08 Electrostatic chuck apparatus
KR1020127014889A KR101465849B1 (ko) 2009-12-10 2010-12-08 정전 척 장치
CN201080056197.0A CN102741996B (zh) 2009-12-10 2010-12-08 静电卡盘装置
US14/640,353 US9721822B2 (en) 2009-12-10 2015-03-06 Electrostatic chuck apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-280672 2009-12-10
JP2009280672A JP5496630B2 (ja) 2009-12-10 2009-12-10 静電チャック装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US13/513,380 A-371-Of-International US8981263B2 (en) 2009-12-10 2010-12-08 Electrostatic chuck apparatus
US14/640,353 Continuation US9721822B2 (en) 2009-12-10 2015-03-06 Electrostatic chuck apparatus

Publications (1)

Publication Number Publication Date
WO2011071073A1 true WO2011071073A1 (ja) 2011-06-16

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Country Status (7)

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US (2) US8981263B2 (ko)
EP (1) EP2511950B1 (ko)
JP (1) JP5496630B2 (ko)
KR (1) KR101465849B1 (ko)
CN (1) CN102741996B (ko)
TW (1) TWI470691B (ko)
WO (1) WO2011071073A1 (ko)

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JP2016207979A (ja) * 2015-04-28 2016-12-08 日本特殊陶業株式会社 静電チャック
JP2019054007A (ja) * 2018-12-20 2019-04-04 株式会社日立ハイテクノロジーズ 静電チャック機構、及び荷電粒子線装置
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JP2011124377A (ja) 2011-06-23
KR101465849B1 (ko) 2014-11-26
EP2511950A1 (en) 2012-10-17
US8981263B2 (en) 2015-03-17
US20150179492A1 (en) 2015-06-25
TWI470691B (zh) 2015-01-21
EP2511950B1 (en) 2019-03-20
KR20120115257A (ko) 2012-10-17
US20120281334A1 (en) 2012-11-08
EP2511950A4 (en) 2014-07-02
TW201135833A (en) 2011-10-16
CN102741996B (zh) 2015-06-10
CN102741996A (zh) 2012-10-17
US9721822B2 (en) 2017-08-01

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