JP4881319B2 - 基板を空間的かつ時間的に温度制御するための装置 - Google Patents
基板を空間的かつ時間的に温度制御するための装置 Download PDFInfo
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10T29/49146—Assembling to base an electrical component, e.g., capacitor, etc. with encapsulating, e.g., potting, etc.
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10T29/00—Metal working
- Y10T29/53—Means to assemble or disassemble
- Y10T29/5313—Means to assemble electrical device
- Y10T29/53252—Means to simultaneously fasten three or more parts
Description
Claims (31)
- 上面を有する温度制御された台座と、
上面、及び、下面、熱的に前記下面に接続したヒータフィルムを持つ、全体が金属若しくはセラミックであるプレートであって、前記ヒータフィルムの空間的パターンを基板に適切に伝達するために適切な厚さを持ち、前記上面及び前記下面は、実質的に互いに平行であり、0.0000127メートル以内の表面粗さを持つプレートと、
前記ヒータフィルムを前記温度制御された台座の上面に接着させる第一の接着層であって、0.0003302メートルから0.001016メートルの厚さを持ち、0.0000254メートル以内の厚さ変動を持つ第一の接着層と、
第二の接着層で前記プレートの上面に接着され、基板を保持するための静電クランプメカニズムを形成する誘電材料の層と、
前記台座、前記第一の接着層、前記ヒータフィルム、及び、ブッシングの空洞とを有し、前記ブッシングは、力を静電クランプメカニズムに供給する垂直ばねが入ったピンの上部先端部を囲う、前記プレートのみに熱的に結合し、電気的に非伝導である、基板の温度制御装置。 - 前記温度制御された台座の上面が0.0000127メートル以内の平滑である、請求項1に記載の装置。
- 前記プレートは、アルミニウムプレートであり、前記プレートの寸法が前記温度制御された台座の上面の寸法と実質的に同じである、請求項1に記載の装置。
- 実質的に前記プレートの前記上面と前記下面が互いに0.0000127メートル以内の平行である、請求項1に記載の装置。
- 前記ヒータフィルムが0.0000127メートル以内の表面粗さを含む、請求項1に記載の装置。
- 前記ヒータフィルムが、複数の抵抗発熱素子を含む、請求項1に記載の装置。
- 前記抵抗発熱素子が前記プレート上にパターンレイアウトを形成する、請求項6に記載の装置。
- 前記第一の接着層が機械的にフレキシブルな熱絶縁層であり、さらに、0.17W/mKから0.51W/mKまでの熱伝導係数を持つ請求項1に記載の装置。
- 前記第一の接着層が固体プラスチックプレートを含む、請求項1に記載の装置。
- 前記固体プラスチックプレートが上面と下面を有し、実質的に上面と下面が互いに0.0000254メートル以内の平行である、請求項9に記載の装置。
- 前記固体プラスチックプレートの熱伝導率が前記ヒータと外部プロセスにより必要とされる相対的なパワーレベルに基づく、請求項9に記載の装置。
- 前記固体プラスチックプレートの前記下面が前記台座の前記上面に実質的に高い熱伝導率を持ち機械的にフレキシブルな接着材で接着される、請求項9に記載の装置。
- 前記固体プラスチックプレートの前記上面が前記プレートの前記下面に実質的に高い熱伝導率を持ち機械的にフレキシブルな接着材で接着される、請求項9に記載の装置。
- 前記空洞に置かれ、且つピンの上部先端が誘電材料の層の下面において、静電クランプ端子に接触した垂直ばねが入ったピンを具備した電気的接続部をさらに有する請求項1に記載の装置。
- 前記ピンの下部先端を保持するソケットをさらに有する、請求項14に記載の装置。
- 前記ソケットと前記ピンの一部を覆い、且つ前記ピンの前記上部先端をむき出しにするプラスチックの絶縁カバーをさらに有する、請求項15に記載の装置。
- 前記ブッシングが前記ピンの前記上部先端を前記台座の前記空洞の壁から熱的に絶縁する、請求項16に記載の装置。
- 前記ヒータフィルムを前記プレートの下面に接着し、前記ヒータフィルムは前記プレートの前記下面から電気的に絶縁され、
前記プレートと前記ヒータフィルムとを前記温度制御された台座の上面に前記第一の接着層で貼り付け、
基板を保持するための静電クランプメカニズムを形成するため前記プレートの上面に前記誘電材料の層を積層する、請求項1に記載の装置の製造方法。 - 前記プレートを前記台座に貼り付ける前に、前記台座の前記上面を0.00000762メートル以内の平坦に機械加工することをさらに含む、請求項18に記載の方法。
- 前記プレートの表面寸法が前記温度制御された台座の表面寸法と実質的に同じである、請求項18に記載の方法。
- 前記プレートは、0.001016メートル以内の厚さを持ち、実質的に、前記プレートの上面と下面が互いに0.0000127メートル以内の平行である、請求項18に記載の方法。
- 前記ヒータフィルムが、0.000254メートルの厚さを持ち、0.0000127メートル以内の表面粗さを持つポリイミドフィルムである、請求項18に記載の方法。
- 前記ヒータフィルムが複数の抵抗発熱素子を含む、請求項18に記載の方法。
- 前記抵抗発熱素子で前記プレート上にパターンレイアウトを形成することをさらに含む、請求項23に記載の方法。
- 前記第一の接着層が機械的にフレキシブルな熱絶縁層を含む、請求項18に記載の方法。
- 前記第一の接着層が固体プラスチックプレートを含む、請求項18に記載の方法。
- 前記固体プラスチックプレートが、0.0001524メートルから0.000508メートルの厚さを持ち、上面と下面を有し、実質的に上面と下面が互いに0.0000254メートル以内の平行である、請求項26に記載の方法。
- 前記固体プラスチックプレートの熱伝導率が、前記ヒータと外部プロセスにより必要とされる相対的なパワーレベルに基づいて決められる、請求項26に記載の方法。
- 前記固体プラスチックプレートを前記台座の前記上面に実質的に高い熱伝導率を持ち機械的にフレキシブルな接着材で接着することと、
前記固体プラスチックプレートの上面を、0.0000127メートル以内の表面粗さに機械加工することと、
をさらに含む、請求項27に記載の方法。 - 前記固体プラスチックプレートを前記プレートの前記下面に実質的に高い熱伝導率を持ち機械的にフレキシブルな接着材で接着することをさらに含む、請求項29に記載の方法。
- 前記プレートを前記台座の前記上面に貼り付けた後、前記プレートの上面を0.0000127メートル以内の平坦に機械加工することをさらに含む、請求項26に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/027,481 US8038796B2 (en) | 2004-12-30 | 2004-12-30 | Apparatus for spatial and temporal control of temperature on a substrate |
US11/027,481 | 2004-12-30 | ||
PCT/US2005/047109 WO2006073947A2 (en) | 2004-12-30 | 2005-12-13 | Apparatus for spatial and temporal control of temperature on a substrate |
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Publication Number | Publication Date |
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JP2008527694A JP2008527694A (ja) | 2008-07-24 |
JP2008527694A5 JP2008527694A5 (ja) | 2011-11-04 |
JP4881319B2 true JP4881319B2 (ja) | 2012-02-22 |
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JP2007549558A Active JP4881319B2 (ja) | 2004-12-30 | 2005-12-13 | 基板を空間的かつ時間的に温度制御するための装置 |
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US (6) | US8038796B2 (ja) |
JP (1) | JP4881319B2 (ja) |
KR (3) | KR20070121637A (ja) |
CN (1) | CN101095212B (ja) |
SG (1) | SG158164A1 (ja) |
TW (1) | TWI403617B (ja) |
WO (1) | WO2006073947A2 (ja) |
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US8038796B2 (en) | 2004-12-30 | 2011-10-18 | Lam Research Corporation | Apparatus for spatial and temporal control of temperature on a substrate |
US9520276B2 (en) * | 2005-06-22 | 2016-12-13 | Tokyo Electron Limited | Electrode assembly and plasma processing apparatus |
JP2007088411A (ja) * | 2005-06-28 | 2007-04-05 | Hitachi High-Technologies Corp | 静電吸着装置およびウエハ処理装置ならびにプラズマ処理方法 |
US9275887B2 (en) | 2006-07-20 | 2016-03-01 | Applied Materials, Inc. | Substrate processing with rapid temperature gradient control |
US7501605B2 (en) * | 2006-08-29 | 2009-03-10 | Lam Research Corporation | Method of tuning thermal conductivity of electrostatic chuck support assembly |
US20080066683A1 (en) * | 2006-09-19 | 2008-03-20 | General Electric Company | Assembly with Enhanced Thermal Uniformity and Method For Making Thereof |
US7901509B2 (en) | 2006-09-19 | 2011-03-08 | Momentive Performance Materials Inc. | Heating apparatus with enhanced thermal uniformity and method for making thereof |
JP2008085283A (ja) | 2006-09-26 | 2008-04-10 | Momentive Performance Materials Inc | 熱均一性が強化された加熱装置及びその製造方法 |
KR101508026B1 (ko) * | 2007-10-31 | 2015-04-08 | 램 리써치 코포레이션 | 컴포넌트 바디와 액체 냉각제 사이의 열 전도도를 제어하기 위해 가스 압력을 이용하는 온도 제어 모듈 |
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CN101095212A (zh) | 2007-12-26 |
US8735298B2 (en) | 2014-05-27 |
WO2006073947A3 (en) | 2007-04-05 |
TWI403617B (zh) | 2013-08-01 |
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