WO2011024486A1 - シリコンインゴットスライス用水溶性切削液 - Google Patents
シリコンインゴットスライス用水溶性切削液 Download PDFInfo
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- WO2011024486A1 WO2011024486A1 PCT/JP2010/005340 JP2010005340W WO2011024486A1 WO 2011024486 A1 WO2011024486 A1 WO 2011024486A1 JP 2010005340 W JP2010005340 W JP 2010005340W WO 2011024486 A1 WO2011024486 A1 WO 2011024486A1
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- Prior art keywords
- acid
- water
- cutting fluid
- soluble cutting
- carboxylic acid
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M173/00—Lubricating compositions containing more than 10% water
- C10M173/02—Lubricating compositions containing more than 10% water not containing mineral or fatty oils
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
- B28D7/02—Accessories specially adapted for use with machines or devices of the preceding groups for removing or laying dust, e.g. by spraying liquids; for cooling work
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
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- C10M2207/022—Hydroxy compounds having hydroxy groups bound to acyclic or cycloaliphatic carbon atoms containing at least two hydroxy groups
- C10M2207/0225—Hydroxy compounds having hydroxy groups bound to acyclic or cycloaliphatic carbon atoms containing at least two hydroxy groups used as base material
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- C10M2207/124—Carboxylix acids; Neutral salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms having hydrocarbon chains of seven or less carbon atoms containing hydroxy groups; Ethers thereof
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- C10M2207/125—Carboxylix acids; Neutral salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms having hydrocarbon chains of eight up to twenty-nine carbon atoms, i.e. fatty acids
- C10M2207/126—Carboxylix acids; Neutral salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms having hydrocarbon chains of eight up to twenty-nine carbon atoms, i.e. fatty acids monocarboxylic
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- C10M2207/127—Carboxylix acids; Neutral salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms having hydrocarbon chains of eight up to twenty-nine carbon atoms, i.e. fatty acids polycarboxylic
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- C10M2207/128—Carboxylix acids; Neutral salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms having hydrocarbon chains of eight up to twenty-nine carbon atoms, i.e. fatty acids containing hydroxy groups; Ethers thereof
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- C10M2207/1403—Carboxylix acids; Neutral salts thereof having carboxyl groups bound to carbon atoms of six-membered aromatic rings used as base material
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- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2215/00—Organic non-macromolecular compounds containing nitrogen as ingredients in lubricant Compositions
- C10M2215/02—Amines, e.g. polyalkylene polyamines; Quaternary amines
- C10M2215/04—Amines, e.g. polyalkylene polyamines; Quaternary amines having amino groups bound to acyclic or cycloaliphatic carbon atoms
- C10M2215/042—Amines, e.g. polyalkylene polyamines; Quaternary amines having amino groups bound to acyclic or cycloaliphatic carbon atoms containing hydroxy groups; Alkoxylated derivatives thereof
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- C10M2219/044—Sulfonic acids, Derivatives thereof, e.g. neutral salts
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- C10N2030/00—Specified physical or chemical properties which is improved by the additive characterising the lubricating composition, e.g. multifunctional additives
- C10N2030/06—Oiliness; Film-strength; Anti-wear; Resistance to extreme pressure
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- C10N2030/18—Anti-foaming property
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- C10N2040/22—Metal working with essential removal of material, e.g. cutting, grinding or drilling
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Definitions
- the present invention relates to a water-soluble cutting fluid used when cutting a silicon ingot.
- water-soluble cutting fluid for example, a composition comprising a polyhydric alcohol such as propylene glycol, an aromatic polyvalent carboxylate (such as isophthalic acid triethanolamine salt), an alkylene oxide adduct of alkylene glycol such as polyethylene glycol, and water.
- a polyhydric alcohol such as propylene glycol
- an aromatic polyvalent carboxylate such as isophthalic acid triethanolamine salt
- an alkylene oxide adduct of alkylene glycol such as polyethylene glycol
- the conventional water-soluble cutting fluid increases the content of water with high specific heat in order to reduce the risk of ignition and increase the cooling efficiency. There was a problem of corrosion deterioration.
- a water-soluble cutting fluid that suppresses corrosion by adding an amine compound has been developed (see Patent Document 2).
- Patent Document 3 For the purpose of suppressing the generation of hydrogen gas in the reaction between water and silicon, a water-soluble cutting fluid containing an oxidizing agent for oxidizing silicon fine powder generated during cutting has been developed (Patent Document 3). reference).
- Patent Document 3 a water-soluble cutting fluid containing an oxidizing agent for oxidizing silicon fine powder generated during cutting.
- processing is performed while supplying cutting fluid to the processing site for the purpose of cooling and lubrication of the wire and silicon ingot of the workpiece, and cleaning of the workpiece surface. Bubbles are generated when the cutting fluid is circulated, and the cutting fluid and the bubbles overflow to contaminate the surroundings.
- JP 2006-96951 A Japanese Patent Laid-Open No. 2005-15617 JP 2006-88455 A
- the present invention is superior in lubricity and cutting efficiency in the cutting process of silicon ingots, can improve the cutting efficiency, does not cause problems such as foaming in the circulating use of cutting fluid, and is used in the metal of the processing apparatus.
- An object of the present invention is to provide a water-soluble cutting fluid that has good corrosion resistance to parts and wires and can suppress hydrogen generation due to the reaction between water and silicon.
- the present invention relates to a monovalent or divalent aliphatic carboxylic acid (A) having 4 to 10 carbon atoms (including carbon of the carbonyl group), the acid dissociation constant of the first dissociation stage and the second dissociation stage.
- A monovalent or divalent aliphatic carboxylic acid having 4 to 10 carbon atoms (including carbon of the carbonyl group), the acid dissociation constant of the first dissociation stage and the second dissociation stage.
- a water-soluble cutting fluid for silicon ingot slices which contains, as an essential component, a polyvalent organic acid (B) having a difference in acid dissociation constant ⁇ pKa or a salt (BA) of the organic acid (B) in a specific range
- Manufacturing method for slicing a silicon ingot including a step of cutting the silicon ingot with a fixed abrasive wire using the water-soluble cutting fluid for slicing silicon ingot; And an electronic material manufactured using the silicon wafer.
- the water-soluble cutting fluid of the present invention has superior lubricity in the cutting process of silicon ingots as compared with conventional products, the cutting efficiency can be improved. Moreover, since flammable hydrogen generation due to the reaction between water and silicon is suppressed, safety is excellent. Moreover, since it has a low foaming property, it does not cause problems such as foaming in circulation use.
- the water-soluble cutting fluid for slicing silicon ingot of the present invention comprises an aliphatic carboxylic acid (A) having a specific carbon number, a polyvalent organic acid (B) having a specific ⁇ pKa, or a salt of the organic acid (B) ( BA) is contained as an essential component.
- the carbon number including the carbon of the carbonyl group of the aliphatic carboxylic acid (A), which is an essential component of the water-soluble cutting fluid for silicon ingot slices of the present invention, is usually 4 to 10, preferably 6 to 10. If it is less than 4, the lubricity is insufficient, and if it exceeds 10, the solubility in water decreases.
- the valence of the aliphatic carboxylic acid (A) is monovalent or divalent, but is preferably divalent.
- the aliphatic carboxylic acid (A) is an aliphatic saturated carboxylic acid or an aliphatic unsaturated carboxylic acid, and preferably an aliphatic saturated carboxylic acid.
- aliphatic carboxylic acid (A) examples include aliphatic monocarboxylic acids and aliphatic dicarboxylic acids.
- aliphatic monocarboxylic acids examples include butyric acid, valeric acid, caproic acid, enanthic acid, caprylic acid, pelargonic acid, capric acid, crotonic acid, isocrotonic acid, sorbic acid, obtusilic acid, caproleic acid and the like.
- aliphatic dicarboxylic acids examples include adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, citraconic acid, mesaconic acid, methylene succinic acid, allylmalonic acid, isopropylidene succinic acid, 2,4-hexanediene diacid, etc. It is done.
- aliphatic carboxylic acids (A) aliphatic dicarboxylic acids are preferred, and azelaic acid and sebacic acid are more preferred from the viewpoint of lubricity and foam suppression.
- the cutting fluid of the present invention may be further diluted with water or a water-miscible organic solvent before use, but the content of the aliphatic carboxylic acid (A) during cutting during use is based on the cutting fluid, Usually, it is 0.01 to 10% by weight, preferably 0.01 to 5% by weight, and more preferably 0.01 to 1% by weight. If it is less than 0.01% by weight, the lubricity is insufficient, and if it exceeds 10% by weight, the antifoaming property is insufficient.
- the polyvalent organic acid (B) contained in the water-soluble cutting fluid for slicing silicon ingot of the present invention has a difference ⁇ pKa between the acid dissociation constant of the first dissociation stage and the acid dissociation constant of the second dissociation stage in a specific range.
- Valent organic acid That is, the polyvalent organic acid (B) of the present invention has a ⁇ pKa represented by the following formula (1) of 0.9 to 2.3.
- ⁇ pKa (pKa 2 ) ⁇ (pKa 1 ) (1)
- the organic acid (B) that is an n-basic acid is represented as H n A
- the acid dissociation constant of the first dissociation stage that becomes H n-1 A + H + is pKa 1
- H n-2 The acid dissociation constant of the second dissociation stage that becomes A + H + is expressed as pKa 2 .
- the difference is ⁇ pKa.
- the acid dissociation constants pKa 1 and pKa 2 represent the logarithm of the reciprocal of the dissociation constant of the compound in the aqueous solution. (Corporation)] described in the table on pages 317-321. ⁇ pKa can be calculated using the values in this table.
- the ⁇ pKa of the organic acid (B) is usually 0.9 to 2.3, preferably 1.4 to 2.2. If it is less than 0.9, the suppression of hydrogen generation due to the reaction between water and silicon is insufficient, and if it exceeds 2.3, the corrosion resistance to metals decreases.
- polyvalent organic acid (B) examples include polyvalent carboxylic acids, polyvalent sulfonic acids, and polyvalent organic phosphoric acids, with polyvalent carboxylic acids being preferred. More preferably, the polyvalent carboxylic acid is an aromatic polyvalent carboxylic acid (B1) and / or a hydroxy polyvalent carboxylic acid (B2).
- the polyvalent organic acid (B) is preferably phthalic acid, malic acid, or citric acid from the viewpoint of suppressing hydrogen generation by the reaction of water and silicon.
- Examples of the salt (BA) of the polyvalent organic acid (B) include an ammonium salt (BA1) of the organic acid (B), an aliphatic amine salt (BA2) of the organic acid (B), and an inorganic alkali of the organic acid (B). And salts (BA3), alkanolamine salts of organic acids (B) (BA4), and mixtures thereof.
- aliphatic amine salt (BA2) of the organic acid (B) methylamine, ethylamine, propylamine, isopropylamine, butylamine, hexylamine, dimethylamine, ethylmethylamine, propylmethylamine, butyl of the organic acid (B) Methylamine, diethylamine, propylethylamine, diisopropylamine, dihexylamine, ethylenediamine, propylenediamine, trimethylenediamine, tetramethylenediamine, hexamethylenediamine, piperidine, piperazine, quinuclidine, 1,4-diazabicyclo [2.2.2] octane (DABCO), salts such as DBU and DBN.
- DBU 1,4-diazabicyclo [2.2.2] octane
- Examples of the inorganic alkali salt (BA3) of the organic acid (B) include salts of the organic acid (B) such as lithium, sodium, potassium, calcium and magnesium.
- alkanolamine salt (BA4) of the organic acid (B) examples include monoethanolamine, diethanolamine, triethanolamine, N-methyldiethanolamine, N, N-dimethylethanolamine, N, N-diethylethanol of the organic acid (B).
- salt (BA) of polyvalent organic acid (B) include fumarate, phthalate, isophthalate, terephthalate, malate, aspartate, m-aminobenzoate, citrate And acid salts and succinic acid salts.
- polyvalent organic acid (B) its salt (BA) may be used, or the organic acid (B) and its salt (BA) may be used in combination. Further, a salt may be formed in the system with a basic compound in which a part or all of the contained polyvalent organic acid (B) is separately blended.
- the organic acid (B) of the present invention is contained for the purpose of improving the suppression of hydrogen generation due to the reaction between water and silicon.
- the content of the organic acid (B) in the cutting fluid of the present invention is usually from 0.01 to 10% by weight, preferably from 0.05 to 5% by weight, more preferably from 0. 1 to 1% by weight. If it is less than 0.01% by weight, the reaction inhibitory property is insufficient, and if it exceeds 10% by weight, the effect is equivalent and economically meaningless.
- the water solubility of the water-soluble cutting fluid of the present invention means that it is not mixed with water and separated at an arbitrary ratio.
- the water-soluble cutting fluid of the present invention may be diluted with water or a water-miscible organic solvent miscible with water at an arbitrary ratio before use.
- the water-soluble cutting fluid for slicing silicon ingot according to the present invention may contain a polyoxyalkylene adduct (C) for the purpose of reducing the viscosity in order to circulate at a stable flow rate or improving the dispersibility of chips.
- C polyoxyalkylene adduct
- R 1 and R 2 each independently represent a hydrogen atom or an alkyl group; AO represents an oxyalkylene group having 2 to 4 carbon atoms.
- (AO) n represents an addition form of one or more alkylene oxides, and the addition form in the case of two kinds may be a block form or a random form. n represents the average number of moles of AO added and is a number from 1 to 10.
- R 1 and R 2 each independently represent a hydrogen atom or an alkyl group.
- the alkyl group include alkyl groups having 1 to 6 carbon atoms, such as a methyl group and an ethyl group.
- R 1 and R 2 are preferably a hydrogen atom, a methyl group, or an ethyl group.
- AO in the formula (2) represents an oxyalkylene group having 2 to 4 carbon atoms, and examples thereof include an oxyethylene group, an oxypropylene group, and an oxybutyl group. From the viewpoint of water solubility, an oxyethylene group and an oxypropylene group are preferable.
- (AO) n represents an addition form of one kind of alkylene oxide or two or more kinds of alkylene oxides, and the addition form in the case of two kinds may be a block form or a random form.
- n represents the average number of moles of AO added, and is usually a number from 1 to 10. Preferably it is 1-5, more preferably 1-3. If it exceeds 10, the viscosity becomes too high and foaming occurs.
- the number average molecular weight of the polyoxyalkylene adduct (C) in the present invention is usually 500 or less, preferably 300 or less, more preferably 200 or less. If it exceeds 500, the viscosity tends to be too high and foaming tends to be a problem.
- polyoxyalkylene adduct (C) examples include water-soluble glycols such as alkylene glycol and polyalkylene glycol, and water-soluble ethers such as alkyl ether of alkylene glycol and alkyl ether of polyalkylene glycol.
- alkylene glycols include ethylene glycol, 1,2-propylene glycol, 1,3-propylene glycol, 1,2-butylene glycol, 1,3-butylene glycol, 1,4 -Butylene glycol and the like.
- polyalkylene glycols include polyethylene glycol (such as diethylene glycol and triethylene glycol), poly 1,2-propylene glycol (such as di 1,2-propylene glycol), and poly 1,3. -Propylene glycol, poly 1,2-butylene glycol, poly 1,3-butylene glycol, poly 1,4-butylene glycol and the like.
- examples of the alkylene glycol mono- or dialkyl ether include ethylene glycol monomethyl ether, ethylene glycol dimethyl ether, 1,2-propylene glycol monomethyl ether, and 1,2-propylene glycol dimethyl ether. .
- polyalkylene glycol mono- or dialkyl ethers include polyethylene glycol monomethyl ether [diethylene glycol monomethyl ether and triethylene glycol monomethyl ether, etc.], polyethylene glycol dimethyl ether [diethylene glycol dimethyl ether and triethylene glycol dimethyl ether. Etc.] and poly 1,2-propylene glycol monomethyl ether [di 1,2-propylene glycol monomethyl ether and the like].
- alkylene glycol, alkylene glycol monoalkyl ether, polyalkylene glycol and polyalkylene glycol monoalkyl ether are preferable from the viewpoint of workability. More preferred are alkylene glycols, polyalkylene glycols, monomethyl ethers and monoethyl ethers thereof having an oxyalkylene group having 2 to 4 carbon atoms. Particularly preferred are 1,2-propylene glycol, diethylene glycol, 1,2-propylene glycol monomethyl ether, 1,2-propylene glycol dimethyl ether, diethylene glycol monomethyl ether, and diethylene glycol dimethyl ether.
- the HLB is preferably from 8 to 45, more preferably from 10 to 45 from the viewpoint of water compatibility, and in this range, the HLB is excellent from the viewpoint of water compatibility. .
- HLB here is an index indicating the balance between hydrophilicity and lipophilicity.
- “Emulsification / Solubilization Technology” [Showa 51, Engineering Book Co., Ltd.] and “Introduction to New Surfactants” [1996] (Takehiko Fujimoto) page 132 and pages 197 to 199, which are known as calculated values by the Oda method and not by the Griffin method.
- For the organic and inorganic values for deriving HLB see “Organic Conceptual Diagram-Fundamentals and Applications-” [1984, Sankyo Publishing Co., Ltd.] and "Introduction to New Surfactants” [1996, Fujimoto. Takehiko] can be calculated using the values in the table on page 198.
- the content of the polyoxyalkylene adduct (C) in the cutting fluid of the present invention is preferably 60 to 90% by weight, more preferably 65 to 80% by weight, based on the cutting fluid in use.
- the amount of water in the water-soluble cutting fluid of the present invention is preferably 10 to 40% by weight, more preferably 20 to 35% by weight, based on the cutting fluid in use.
- the content of the aliphatic carboxylic acid (A) relative to the polyoxyalkylene adduct (C) is usually 0.001 to 1.0% by weight, preferably 0.001 to 0.5% by weight, more preferably 0. 0.001 to 0.1% by weight.
- the total content of the aromatic polyvalent carboxylic acid (B1) and the hydroxy polyvalent carboxylic acid (B2) relative to the polyoxyalkylene adduct (C) is usually 0.01 to 10% by weight, preferably 0.01 to It is 5% by weight, more preferably 0.01 to 3% by weight.
- the water-soluble cutting fluid of the present invention may further contain a pH adjuster (D), a dispersant (E) and the like.
- Examples of the pH adjuster (D) include inorganic acids such as hydrochloric acid, and alkali metal hydroxides such as sodium hydroxide and potassium hydroxide.
- the pH adjuster is preferably a 1% by weight aqueous solution so that the cleaning liquid does not exhibit strong acid or strong alkalinity when cleaning the workpiece sliced with the water-soluble cutting liquid of the present invention. It is added so that the pH is 5 to 9, more preferably 5 to 8.
- the content of the pH adjusting agent is 5% by weight or less with respect to the cutting fluid.
- dispersant (E) naphthalene sulfonic acid formalin condensate and / or salt thereof, polycarboxylic acid salt, polystyrene sulfonate salt, polyvinyl sulfonate salt, polyalkylene glycol sulfate ester salt, polyvinyl alcohol phosphate ester salt, melamine Examples include sulfonates and lignin sulfonates.
- the content of the dispersant is 0.01 to 5% by weight, preferably 0.1 to 1% by weight, based on the cutting fluid. If it is 0.01% by weight or more, the dispersion effect is more easily exhibited, and if it is 5% by weight or less, the chips tend not to aggregate.
- the water-soluble cutting fluid of the present invention can be suitably used when sizing a silicon ingot with a wire.
- the water-soluble cutting fluid of the present invention is particularly suitable for sizing processing of a silicon ingot using a fixed abrasive wire.
- Examples 1 to 7 and Comparative Examples 1 to 6 After blending each component other than the potassium hydroxide aqueous solution at the blending ratio (parts by weight) shown in Table 1, the pH was adjusted to around 5.8 with the potassium hydroxide aqueous solution. Examples 1 to 7 and Comparative Examples 1 to 6 water-soluble cutting fluids were prepared.
- phthalate (BA-1) used was a salt of phthalic acid / triethanolamine (1: 2 mol).
- the coefficient of friction is required to be 0.40 or less. If the coefficient of friction is high, the lubricity is insufficient, and the wafer surface accuracy becomes insufficient.
- the foam suppression was evaluated by measuring the height of the foam 20 minutes after circulating the cutting fluid and according to the following criteria. ⁇ : Less than 15 mm ⁇ : 15 to 25 mm ⁇ : Over 25 mm
- Comparative Example 6 using maleic acid having ⁇ pKa of 4.08 is also inferior in reaction inhibition.
- Comparative Example 4 and Comparative Example 5 using high molecular weight polyethylene glycol as the polyoxyalkylene adduct are inferior in foam suppression.
- the water-soluble cutting fluid of the present invention is useful as a water-soluble cutting fluid used when cutting a silicon ingot because it is excellent in lubricity, reaction suppression of hydrogen generation by water and silicon, and foam suppression.
- Silicon wafers manufactured by cutting a silicon ingot using the water-soluble cutting fluid of the present invention can be used as, for example, electronic materials for memory elements, oscillation elements, amplification elements, transistors, diodes, solar cells, LSIs, etc.
- the electronic material can be used for, for example, a solar power generation device, a personal computer, a mobile phone, a display, and an audio.
- the water-soluble cutting fluid of the present invention is also useful as a cutting fluid used when cutting a hard workpiece such as quartz, silicon carbide, and sapphire.
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Abstract
Description
その対策として、アミン系化合物を配合することで腐食を抑制した水溶性の切削液が開発されている(特許文献2参照)。
しかし、水とシリコンの反応性は抑えられるものの、加工装置や固定砥粒ワイヤーを腐食するという問題があった。
その対策として、消泡剤を貯留タンクに添加する方法や、泡が溢れ出した箇所に消泡剤を塗付する方法等が挙げられるが、十分な効果が得られていない。
すなわち、本発明は、炭素数(カルボニル基の炭素を含める)が4~10の1価もしくは2価の脂肪族カルボン酸(A)、および第1解離段の酸解離定数と第2解離段の酸解離定数の差 ΔpKaが特定の範囲にある多価の有機酸(B)または該有機酸(B)の塩(BA)を必須成分として含有することを特徴とするシリコンインゴットスライス用水溶性切削液;このシリコンインゴットスライス用水溶性切削液を用いて固定砥粒ワイヤーによりシリコンインゴットを切断する工程を含むシリコンインゴットをスライスする製造方法:シリコンインゴットスライス用水溶性切削液を用いてシリコンインゴットを切断して製造されたシリコンウエハ;並びにこのシリコンウエハを用いて製造された電子材料である。
また、水とシリコンの反応による引火性の水素発生が抑制されるため、安全性に優れる。また低泡性であるため、循環使用における泡立ちなどの問題を起こさない。
また、脂肪族カルボン酸(A)は脂肪族飽和カルボン酸または脂肪族不飽和カルボン酸であるが、好ましくは脂肪族飽和カルボン酸である。
0.01重量%未満では潤滑性が不十分であり、10重量%を超えると抑泡性が不十分である。
すなわち、本発明の多価の有機酸(B)は下記数式(1)で表されるΔpKaが0.9~2.3である。
ΔpKa = (pKa2) - (pKa1) (1)
0.9未満では水とシリコンの反応による水素発生の抑制が不十分であり、2.3を超えると金属に対する耐腐食性が低下する。
さらに好ましくは、多価カルボン酸が芳香族多価カルボン酸(B1)、および/またはヒドロキシ多価カルボン酸(B2)である。
本発明の切削液中の有機酸(B)の含有量は、使用時の切削液に対して、通常0.01~10重量%、好ましくは0.05~5重量%、さらに好ましくは0.1~1重量%である。
0.01重量%未満では反応抑制性が不十分であり、10重量%を超えても効果は同等で経済的に意味がない。
そして、本発明の水溶性切削液は、使用前に水、あるいは水と任意の割合で混和しえる水混和性有機溶媒で希釈して使用してもよい。
R1O-(AO)n-R2 (2)
アルキル基としては炭素数1~6のアルキル基が挙げられ、例えば、メチル基、エチル基などが挙げられる。
R1とR2として好ましいのは、水素原子、メチル基、エチル基である。
nはAOの平均付加モル数を表し、通常1~10の数である。好ましくは1~5、さらに好ましくは1~3である。10を超えると粘度が高くなり過ぎ、泡立ちが起こる。
500を超えると粘度が高くなり過ぎ、泡立ちが問題となる傾向がある。
特に好ましくは、1,2-プロピレングリコール、ジエチレングリコール、1,2-プロピレングリコールモノメチルエーテル、1,2-プロピレングリコールジメチルエーテル、ジエチレングリコールモノメチルエーテル、ジエチレングリコールジメチルエーテルである。
そして、HLBを導き出すための有機性値及び無機性値については「有機概念図―基礎と応用―」〔昭和59年、三共出版(株)〕や「新界面活性剤入門」〔1996年、藤本武彦著〕198頁に記載の表の値を用いて算出できる。
該ポリオキシアルキレン付加物(C)に対する芳香族多価カルボン酸(B1)とヒドロキシ多価カルボン酸(B2)の合計の含有量が、通常0.01~10重量%、好ましくは0.01~5重量%、さらに好ましくは0.01~3重量%である。
pH調製剤は、本発明の水溶性切削液を用いてスライシングされた被加工物を洗浄する際に、洗浄液が強酸または強アルカリ性を示さないように、好ましくは1重量%の水溶液とした際のpHが5~9、さらに好ましくは5~8になるように添加される。pH調整剤の含有量は、切削液に対して、5重量%以下である。
表1記載の配合比(重量部)で水酸化カリウム水溶液以外の各成分を配合した後に、水酸化カリウム水溶液でpHが5.8前後になるように調整し、実施例1~7および比較例1~6の水溶性切削液を調製した。
得られた水溶性切削液について、潤滑性、反応抑制性、抑泡性の評価試験を行った。結果を表1に示す。
摩擦係数はピン(ボール)・オン・ディスクタイプの摩擦磨耗試験器(レスカ製、FRP-2000)を使用し、水溶性切削液20gに浸したシリコンウエハと鋼球間の摩擦係数を測定して潤滑性を評価した。
潤滑性試験は次の条件で行った。
シリコンウエハ:試験片40mm×40mm
荷重:100g
線速度:5.23cm/s
測定温度:25℃
水とシリコンの反応による水素発生の抑制性の評価は以下に示す方法で行った。
(1)ガラスサンプル瓶に水性切削液18gとシリコン粉末(高純度化学研究所製、純度99%、平均粒径1μm)を2g加え、38kHzの超音波洗浄機を用いて超音波を2分間照射して、シリコン粉末を分散してスラリーを得た。
(2)水を満たして逆さに水槽に伏せたメスシリンダーにガラス管の一端を導入し、その他端を、穴の空いたゴム栓で封をしたガラスサンプル瓶に、上記のスラリーを入れた。
上記のスラリーが入ったガラスサンプル瓶の口に、ガラス管を通したゴム栓でそのサンプル瓶の封をし、水を満たして逆さに水槽に伏せたメスシリンダーにそのガラス管の他端を導入し、発生した水素ガスをメスシリンダー内部の水と置換させるようにセットした。
(3)これらの水槽、メスシリンダー、ガラス菅およびスラリーの入ったサンプル瓶の一連のセットを、60℃の恒温高温槽に2時間静置し、その間に発生する水素を水上置換法にてメスシリンダーに回収して水素発生量を測定した。
○:水素ガス発生量が10mL未満
△:水素ガス発生量が10~20mL
×:水素ガス発生量が20mL以上
抑泡性試験は高温高圧液流試験機(辻井染機工業製、LJ-2000)を用いて、次の条件で行なった。
水溶性切削液量:1300g
流量:2.9L/分
循環時間:20分
試験スタート時の温度:25℃
○:15mm未満
△:15~25mm
×:25mm超
一方、必須成分の脂肪族カルボン酸として炭素数の少ないシュウ酸を用いた比較例1、および脂肪族カルボン酸を用いない比較例2~4は摩擦係数が高く潤滑性が劣る。
脂肪族カルボン酸としてΔpKaが0.73であるアゼライン酸のみを用い必須成分の特定範囲内のΔpKaの有機酸を併用しない比較例5は反応抑制性が劣る。また、ΔpKaが4.08のマレイン酸を用いた比較例6も反応抑制性が劣る。
一方、ポリオキシアルキレン付加物として高分子量のポリエチレングリコールを用いた比較例4と比較例5は抑泡性が劣る。
本発明の水溶性切削液を用いてシリコンインゴットを切削加工して製造されたシリコンウエハは、例えばメモリ素子、発振素子、増幅素子、トランジスタ、ダイオード、太陽電池、LSIの電子材料として利用でき、これらの電子材料は、例えば太陽光発電装置、パソコン、携帯電話、ディスプレー、オーディオなどに使用することができる。
また、本発明の水溶性切削液は、水晶、炭化ケイ素、サファイヤなどの硬質な被加工物を切削する際に使用する切削液としても有用である。
Claims (12)
- 炭素数(カルボニル基の炭素を含める)が4~10の1価もしくは2価の脂肪族カルボン酸(A)、および下記数式(1)で表されるΔpKaが0.9~2.3の多価の有機酸(B)または該有機酸(B)の塩(BA)を必須成分として含有することを特徴とするシリコンインゴットスライス用水溶性切削液。
ΔpKa = (pKa2) - (pKa1) (1)
ただし、n塩基酸HnAである有機酸(B)がHn-1A + H+となる解離段を1としたときの酸解離定数をpKa1;Hn-2A + H+となる解離段を2としたときの酸解離定数をpKa2と表す。 - 該多価の有機酸(B)が多価カルボン酸である請求項1記載の水溶性切削液。
- 該多価カルボン酸が芳香族多価カルボン酸(B1)、および/またはヒドロキシ多価カルボン酸(B2)である請求項2記載の水溶性切削液。
- 該多価の有機酸(B)または該有機酸(B)の塩(BA)が、フタル酸、フタル酸塩、イソフタル酸、イソフタル酸塩、テレフタル酸、テレフタル酸塩、クエン酸、クエン酸塩、リンゴ酸およびリンゴ酸塩からなる群より選ばれる1種以上である請求項1~3いずれか記載の水溶性切削液。
- さらに、下記化学式(2)で表され数平均分子量が500以下であるポリオキシアルキレン付加物(C)を含有する請求項1~4いずれか記載の水溶性切削液。
R1O-(AO)n-R2 (2)
[式(2)中、R1とR2はそれぞれ独立に水素原子またはアルキル基;AOは炭素数が2~4のオキシアルキレン基を表す。(AO)nは1種のアルキレンオキサイドまたは2種以上のアルキレンオキサイドの付加形式を表し、異種の場合の付加形式はブロック状でもランダム状でもよい。nはAOの平均付加モル数を表し、1~10の数である。] - 該ポリオキシアルキレン付加物(C)のHLBが8~45である請求項5記載の水溶性切削液。
- 該ポリオキシアルキレン付加物(C)が、アルキレングリコール、アルキレングリコールモノアルキルエーテル、ポリアルキレングリコールおよびポリアルキレングリコールモノアルキルエーテルからなる群より選ばれる1種以上のポリオキシアルキレン付加物である請求項5または6記載の水溶性切削液。
- 該ポリオキシアルキレン付加物(C)に対する該脂肪族カルボン酸(A)の含有量が0.001~1.0重量%である請求項5~7いずれか記載の水溶性切削液。
- 該ポリオキシアルキレン付加物(C)に対する芳香族多価カルボン酸(B1)とヒドロキシ多価カルボン酸(B2)の合計の含有量が0.01~10重量%である請求項5~8いずれか記載の水溶性切削液。
- 請求項1~9のいずれか記載のシリコンインゴットスライス用水溶性切削液を用いて固定砥粒ワイヤーによりシリコンインゴットを切断する工程を含むシリコンインゴットをスライスする製造方法。
- 請求項1~9のいずれか記載のシリコンインゴットスライス用水溶性切削液を用いてシリコンインゴットを切断して製造されたシリコンウエハ。
- 請求項11記載のシリコンウエハを用いて製造された電子材料。
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201080036965.6A CN102482613B (zh) | 2009-08-31 | 2010-08-30 | 水溶性切削液、硅锭切片的制造方法、硅晶圆及电子材料 |
| KR1020127003027A KR20120061821A (ko) | 2009-08-31 | 2010-08-30 | 실리콘 잉곳 슬라이스용 수용성 절삭액 |
| US13/392,091 US9522481B2 (en) | 2009-08-31 | 2010-08-30 | Water-soluble cutting fluid for slicing silicon ingots |
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| JP2009199489 | 2009-08-31 | ||
| JP2009-199489 | 2009-08-31 |
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| WO2011024486A1 true WO2011024486A1 (ja) | 2011-03-03 |
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| PCT/JP2010/005340 Ceased WO2011024486A1 (ja) | 2009-08-31 | 2010-08-30 | シリコンインゴットスライス用水溶性切削液 |
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| Country | Link |
|---|---|
| US (1) | US9522481B2 (ja) |
| JP (1) | JP2011068884A (ja) |
| KR (1) | KR20120061821A (ja) |
| CN (1) | CN102482613B (ja) |
| TW (1) | TWI432568B (ja) |
| WO (1) | WO2011024486A1 (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012132448A1 (ja) * | 2011-03-31 | 2012-10-04 | 三洋化成工業株式会社 | シリコンインゴットスライス用含水切削液 |
| US9803156B2 (en) | 2012-12-06 | 2017-10-31 | Dow Global Technologies Llc | Aqueous cutting fluid composition |
| CN108165362A (zh) * | 2017-12-06 | 2018-06-15 | 清华大学天津高端装备研究院 | 一种全合成水基蓝宝石切削液及其制备方法 |
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| US8960177B2 (en) * | 2008-12-20 | 2015-02-24 | Cabot Microelectronics Corporation | Wiresaw cutting method |
| KR20160018470A (ko) * | 2013-04-05 | 2016-02-17 | 팰리스 카가쿠 가부시기가이샤 | 고정 지립 와이어소용 수용성 절단액, 그것을 이용한 잉곳의 절단 방법 및 그것에 의해서 얻어진 전자 재료용 기판 |
| JP6025662B2 (ja) * | 2013-05-31 | 2016-11-16 | Ntn株式会社 | 水溶性切削研削油剤 |
| CN103448153B (zh) * | 2013-08-23 | 2016-02-03 | 蓝思科技股份有限公司 | 一种蓝宝石晶棒的切割工艺及其加工治具 |
| JP2015046474A (ja) * | 2013-08-28 | 2015-03-12 | コマツNtc株式会社 | ウェーハの製造方法及びワイヤソーにおける加工条件決定方法 |
| JP7030713B2 (ja) * | 2015-12-21 | 2022-03-07 | ヘンケル・アクチェンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト・アウフ・アクチェン | 金属加工液 |
| JP7231934B2 (ja) * | 2019-08-28 | 2023-03-02 | パレス化学株式会社 | 水溶性切削加工液 |
| JP7636943B2 (ja) | 2021-03-31 | 2025-02-27 | 出光興産株式会社 | 加工液、加工液用組成物及び脆性材料加工液組成物 |
| CN119220328B (zh) * | 2023-06-30 | 2025-11-14 | 中国石油化工股份有限公司 | 电动汽车变速箱润滑油组合物及其制备方法 |
| JP2026009714A (ja) * | 2024-07-08 | 2026-01-21 | 出光興産株式会社 | 加工液 |
| JP2026009715A (ja) * | 2024-07-08 | 2026-01-21 | 出光興産株式会社 | 加工液 |
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| CN103502409B (zh) * | 2011-03-31 | 2015-08-19 | 三洋化成工业株式会社 | 硅锭切片用含水切削液、硅锭切片方法、硅晶圆及其制造方法、电子材料及太阳电池用单元 |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN102482613A (zh) | 2012-05-30 |
| TWI432568B (zh) | 2014-04-01 |
| US9522481B2 (en) | 2016-12-20 |
| KR20120061821A (ko) | 2012-06-13 |
| US20120156123A1 (en) | 2012-06-21 |
| CN102482613B (zh) | 2016-01-20 |
| JP2011068884A (ja) | 2011-04-07 |
| TW201125967A (en) | 2011-08-01 |
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