WO2010067538A1 - 顆粒状の半導体封止用エポキシ樹脂組成物ならびにそれを用いた半導体装置及び半導体装置の製造方法 - Google Patents
顆粒状の半導体封止用エポキシ樹脂組成物ならびにそれを用いた半導体装置及び半導体装置の製造方法 Download PDFInfo
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- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01087—Francium [Fr]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the present invention relates to a granular epoxy resin composition for encapsulating a semiconductor suitable for encapsulating a semiconductor element by compression molding, a semiconductor device using the same, and a method for manufacturing the semiconductor device.
- epoxy resin composition for semiconductor encapsulation
- resin composition an epoxy resin composition for semiconductor encapsulation
- transfer molding using a shaped tablet is common, but in recent years, sealing by compression molding has been studied as a new molding method. This is because there is less macro flow of molten resin compared to conventional transfer molding, so wire flow is applied to a semiconductor device in which a lead frame, a circuit board, and a semiconductor element are connected by a fine pitch wire, long wire, or small diameter wire. It is attracting attention as a method that can minimize the above.
- Patent Document 1 As a technique related to a semiconductor device in which a semiconductor element is sealed by compression molding, a method of performing resin molding by compression molding while reducing the pressure inside a mold (see, for example, Patent Document 1) and a molding material for sealing Using a pellet or sheet having a thickness of 3.0 mm or less (see, for example, Patent Document 2), supplying a granular resin composition to the cavity, melting the resin composition, and semiconductor device A method of immersing, curing and sealing (for example, see Patent Document 3) and the like are disclosed.
- a certain amount of the product 103 is conveyed to prepare a resin material supply container 102 in which the granular resin composition 103 is placed (see FIG. 1).
- the granular resin composition 103 in the resin material supply container 102 can be measured by a measuring means installed under the resin material supply container 102.
- a resin material supply container 102 in which a granular resin composition 103 is placed is placed between an upper mold and a lower mold of a compression mold, and a lead frame or a circuit board on which a semiconductor element is mounted is installed. It is fixed to the upper mold of the compression molding die by a fixing means such as clamp and suction (not shown) so that the semiconductor element mounting surface is on the lower side.
- a fixing means such as clamp and suction (not shown) so that the semiconductor element mounting surface is on the lower side.
- the surface opposite to the semiconductor element mounting surface is backed by using a film or the like.
- the weighed granular resin composition 103 is supplied into the lower mold cavity 104 by a resin material supply mechanism such as a shutter constituting the bottom surface of the resin material supply container 102 (see FIG. 2), the granular shape is obtained.
- the resin composition 103 is melted at a predetermined temperature in the lower mold cavity 104.
- the mold is clamped by a compression molding machine while reducing the pressure inside the cavity as necessary so that the molten resin composition surrounds the semiconductor element.
- the semiconductor element is encapsulated by filling the cavity and further curing the resin composition for a predetermined time. After a predetermined time has elapsed, the mold is opened and the semiconductor device is taken out.
- the semiconductor element mounted on the lead frame or the circuit board may be plural, and may be stacked or mounted in parallel.
- the present invention provides a granular semiconductor sealing epoxy resin composition having excellent productivity in the case of obtaining a semiconductor device by sealing a semiconductor element by compression molding using a granular semiconductor sealing epoxy resin composition.
- a semiconductor device having excellent reliability is provided.
- a granular semiconductor sealing epoxy resin composition used in a semiconductor device formed by sealing a semiconductor element by compression molding The ratio of particles of 2 mm or more in the particle size distribution measured by sieving using a JIS standard sieve is 3 mass% or less with respect to the whole granular epoxy resin composition for semiconductor encapsulation, and is 1 mm or more and 2 mm.
- a granular epoxy resin composition for encapsulating a semiconductor characterized in that the proportion of particles less than 0.5% by mass to 60% by mass and the proportion of fine powders less than 106 ⁇ m is 5% by mass or less.
- a granular semiconductor sealing epoxy resin composition used in a semiconductor device formed by sealing a semiconductor element by compression molding The ratio of coarse particles of 2 mm or more in the particle size distribution measured by sieving using a JIS standard sieve is 3% by mass or less and less than 106 ⁇ m with respect to the whole granular epoxy resin composition for semiconductor encapsulation.
- the proportion of fine powder is 5% by mass or less.
- the ratio D1 / D2 between the granule density D1 of the epoxy resin composition for semiconductor encapsulation and the cured product specific gravity D2 after curing of the epoxy resin composition for semiconductor encapsulation is in the range of 0.88 or more and 0.97 or less.
- a granular epoxy resin composition for semiconductor encapsulation is provided.
- a semiconductor element when a semiconductor element is encapsulated by compression molding using a granular epoxy resin composition for semiconductor encapsulation, a granular semiconductor encapsulation epoxy having excellent productivity is obtained. While realizing a resin composition, it is possible to realize a highly reliable semiconductor device.
- the first granular epoxy resin composition for encapsulating a semiconductor is used for a semiconductor device in which a semiconductor element is encapsulated by compression molding, and has the following configuration.
- B The proportion of fine powder of less than 106 ⁇ m is 5% by mass or less.
- the 1st granular epoxy resin composition for semiconductor sealing is equipped with the following structures.
- X2 The first granular epoxy resin composition for encapsulating a semiconductor has a maximum length (L) of 5 mm or less with respect to particles having a particle size distribution of 106 ⁇ m or more measured by sieving using a JIS standard sieve. And the ratio of the particle
- X3 The decay angle of the first granular epoxy resin composition for encapsulating a semiconductor is 35 ° or less.
- the second granular epoxy resin composition for encapsulating a semiconductor is used in a semiconductor device in which a semiconductor element is encapsulated by compression molding, and has the following configuration.
- the 2nd granular epoxy resin composition for semiconductor sealing is equipped with the following structures.
- Y2 The granule density D1 of the second granular epoxy resin composition for encapsulating a semiconductor is 1.95 or less.
- the granular resin sealing epoxy resin composition of the present invention has a particle size distribution measured by sieving using a JIS standard sieve in order to obtain a stable supply property to a compression mold and good weighing accuracy.
- the proportion of particles of 2 mm or more is preferably 3% by mass or less, more preferably 1% by mass or less, based on the total resin composition. This is because the larger the particle size, the larger the mass and volume, so the larger the proportion of large particles, the lower the weighing accuracy during weighing, which contributes to the quality degradation in the semiconductor device after molding. If the range is less than the above upper limit value, there is a low risk of quality deterioration in the semiconductor device by obtaining good weighing accuracy. This is also because the risk of problems such as clogging at the supply port to the transport path is reduced. Further, the lower limit value of the ratio of particles (coarse particles) of 2 mm or more is not particularly limited, and may be 0% by mass.
- the granular epoxy resin composition for semiconductor encapsulation of the present invention has a particle size distribution measured by sieving using a JIS standard sieve in order to obtain stable transportability, productivity, and stable weighing accuracy.
- the proportion of the fine powder less than 5% is preferably 5% by mass or less, and more preferably 3% by mass or less, based on the total resin composition. This is because fine powder of less than 106 ⁇ m causes sticking during storage of the granular resin composition, sticking of particles on the transport path of the granular resin composition, and adhesion to the transport device, causing the transport failure If the range is less than the above upper limit, there is almost no sticking of particles to each other and adhesion to the transfer device, and good continuous productivity and stable production. This is because the sex is obtained. Further, the lower limit value of the proportion of fine powder having a particle size of less than 106 ⁇ m is not particularly limited, and may be 0% by mass.
- a JIS standard sieve having a mesh size of 2.00 mm and 106 ⁇ m provided in a low-tap type sieve vibrator was used, and these sieves were vibrated for 20 minutes. (Hammer hit: 120 times / minute) 40 g of sample was passed through a sieve and classified, and the mass% of coarse particles remaining on the 2.00 mm sieve relative to the mass of the sample before classification, and the mass of fine powder passing through the 106 ⁇ m sieve % Is preferable because it can embody the characteristics required for actual compression molding.
- particles having a high aspect ratio may pass through each sieve, but for convenience, they are classified by a certain method.
- the particle size distribution of the granular resin composition is defined by mass% of the components.
- the resin composition for semiconductor molding for compression molding that has been conventionally used is prepared by pre-mixing each raw material component with a mixer, followed by heating and kneading with a kneader such as a roll, kneader, or extruder, followed by cooling and pulverization steps.
- a kneader such as a roll, kneader, or extruder
- the amount of fine powder of less than 106 ⁇ m exceeds 10% by mass in the particle size distribution measured by sieving using a JIS standard sieve with respect to the total resin composition. The amount was about 4 to 6% by mass and had a wide particle size distribution.
- the epoxy resin molding material described in JP-A-2000-021908 is a coarse resin obtained by pulverizing and cutting fine powder, or a granular resin composition obtained by solidifying fine powder. It was almost spherical and had an average particle size of about 2 mm. That is, the epoxy resin molding material described in Patent Document 1 contains a considerable amount of coarse particles of 2 mm or more.
- the first granular epoxy resin composition for encapsulating a semiconductor is a sieve using a JIS standard sieve in order to reduce unevenness in the compression mold due to variations in the supply of the granular resin composition.
- the ratio of particles of 1 mm or more and less than 2 mm is preferably 0.5% by mass or more, and more preferably 5% by mass or more, based on the total resin composition.
- it is 10 mass% or more.
- an upper limit is 60 mass% or less, it is more preferable that it is 60 mass% or less, and it is further more preferable that it is 55 mass% or less.
- the range is not more than the above upper limit value, unevenness in the mold cavity due to supply variation can be suppressed, and there is a low risk of problems such as defective filling and wire flow. Moreover, when it is set as the range more than the said lower limit, neither the adhesion
- JIS standard sieves having openings of 2.00 mm, 1.00 mm and 106 ⁇ m provided in a low tap type sieve vibrator were used. Using these sieves for 20 minutes while vibrating (hammer stroke: 120 times / minute), 40 g of the sample was passed through the sieve and classified. The total sample mass before classification was 2.00 mm, 1.00 mm.
- the method of determining the mass% of particles remaining on the sieve and the mass% of fine powder passing through the 106 ⁇ m sieve is preferable because the characteristics necessary for actual compression molding can be realized.
- each of the granular resin compositions of the present invention has a mass% of components classified under the above-mentioned certain conditions. Defined as particle size distribution.
- the first granular epoxy resin composition for encapsulating a semiconductor has a maximum length (L) of 5 mm or less from the viewpoint of transportability by a transport means such as a vibration feeder and meltability at the time of compression molding.
- the particles having a shortest length (S) of 1 mm or less are preferably 50% by mass or more, more preferably 80% by mass or more of the entire particles having a length of 106 ⁇ m or more.
- the ratio of the particles having the longest length (L) exceeding 5 mm is small, there is little possibility of causing problems such as a reduction in the supply speed during conveyance and clogging at the supply port to the conveyance path.
- the ratio of the particles having the shortest length (S) exceeding 1 mm is small, there is little risk of inconveniences such as variations in solubility when introduced into the mold cavity.
- particles of 106 ⁇ m or less are removed by sieving the granular resin composition using the JIS standard sieve described above, and more 100 particles are randomly selected from the particles, and the longest length (L) and shortest length (S) of each particle are measured using a caliper, a microscope equipped with a scale, etc.
- the longest length (L) is 5 mm or less and the shortest length (S) is 1 mm or less and the shortest length
- the longest part be the longest length (L)
- the shortest part be the shortest length (S) about each particle
- the longest portion of the linear distance may be measured.
- the first granular epoxy resin composition for encapsulating a semiconductor has a collapse angle (also referred to as “collapse angle”) of 35 ° or less from the viewpoint of transportability by a transport means such as a vibration feeder. Preferably, it is 30 ° or less, and more preferably 25 ° or less.
- a transporting means such as a vibration feeder
- the lower the collapse angle the less likely to cause sticking or clogging, and the lower limit value is not particularly limited. For example, it can be 1 ° or more, or 10 ° or more.
- a granular resin composition 202 is dropped and deposited from a hole of a funnel 201 onto a horizontal plate 205 having a certain area until it has a certain shape, and conical granules are formed.
- a body 204 is formed.
- a weight 203 having a certain weight on the same pedestal 206 as the horizontal plate 205 a certain impact is given to the granule 204, and the partially granular resin composition naturally flows, and the horizontal plate After falling off from 205, the collapse angle of the remaining conical granule 207 can be obtained as the elevation angle from the point on the outer periphery of the bottom surface to the apex of the cone.
- the elevation angle in the granule 204 before giving an impact is called an angle of repose
- the difference between the angle of repose and the collapse angle is called a difference angle.
- the difference angle is an index representing the ease of collapse of the granular resin composition due to vibration from a conveying device such as a vibration feeder, and the greater the difference angle, the easier it is to collapse.
- the angle is preferably 15 ° or more, and more preferably 15 ° or more.
- a powder tester manufactured by Hosokawa Micron Co., Ltd.
- the particle size distribution In the first granular epoxy resin composition for encapsulating a semiconductor, the particle size distribution, the ratio of particles having a longest length (L) of 5 mm or less and a shortest length (S) of 1 mm or less, and a disintegration angle
- a method of obtaining a granular epoxy resin composition for sealing a semiconductor which will be described later, is used, or the types and blending ratios of the epoxy resin, the curing agent and the curing accelerator are adjusted. Is achieved.
- the effects of the first granular epoxy resin composition for encapsulating a semiconductor will be described with reference to the problems peculiar to the compression molding method.
- the granular resin composition with respect to the bottom surface of the lower mold cavity of the compression molding mold Must be evenly spread.
- the method is not limited to the above example, and in the case of a method including a step of conveying a granular resin composition using a conveying means such as a vibration feeder, a granular shape is formed on the conveying path of the conveying means such as a vibration feeder.
- particles of the resin composition adhere to each other, or a granular resin composition adheres to the conveyance path.
- the granular resin composition may be clogged (hopper bridge) at the supply port to the conveyance path, or the granular resin composition may stay on the conveyance path. If the supply of the granular resin composition by the conveying means such as the vibration feeder varies due to such sticking, adhesion, clogging, staying, etc., unevenness occurs on the bottom surface of the lower mold cavity of the compression mold. Will be.
- the amount of the granular resin composition is large when the semiconductor element is encapsulated. Lateral flow from place to place will occur, which may cause wire flow of the semiconductor element and cause filling defects such as nests and voids in places where the amount of granular resin composition is small. There was a possibility.
- the granular resin composition has a certain particle size distribution, depending on the particle shape (for example, spherical shape), dispersion of the melting rate between particles is likely to occur, and a problem of poor filling such as nests and voids occurs. There was a case.
- the amount of the resin composition used is reduced, so the influence of unevenness on the lower mold cavity of the compression mold becomes significant. Problems such as wire flow and insufficient filling are more likely to occur. In addition, if sticking, adhesion, clogging, staying, or the like occurs, it takes a long time to carry, and productivity is also lowered.
- the first granular epoxy resin composition for encapsulating a semiconductor is an epoxy resin composition for encapsulating a semiconductor for use in a semiconductor device in which a semiconductor element is encapsulated by compression molding.
- the proportion of particles of 2 mm or more in the particle size distribution measured by sieving using a JIS standard sieve is 3% by mass or less, and the proportion of particles of 1 mm or more and less than 2 mm with respect to the entire epoxy resin composition for stopping. It is 5 mass% or more and 60 mass% or less, and the ratio of the differentiation of less than 106 ⁇ m is 0.5 mass% or less.
- the manufacturing method of the semiconductor device of the present invention is characterized in that the semiconductor element is sealed by compression molding using the granular epoxy resin composition for semiconductor sealing described above. Semiconductor devices can be manufactured while avoiding problems such as poor filling and wire flow.
- the semiconductor device includes a lead frame or a circuit board, and one or more semiconductor elements mounted on the lead frame or the circuit board in a stacked or parallel manner,
- a semiconductor device comprising a bonding wire for electrically connecting a lead frame or circuit board and a semiconductor element, and a sealing material for sealing the semiconductor element and the bonding wire, wherein the sealing material is in the granular form of the present invention
- the semiconductor device composed of a cured product obtained by compression molding of the semiconductor sealing epoxy resin composition, effectively when the thickness of the sealing material on the semiconductor element is 0.08 mm or more and 0.5 mm or less, Particularly effective when the thickness of the sealing material on the semiconductor element is 0.1 mm or more and 0.3 mm or less, such as poor filling or deterioration of wire flow.
- the thickness of the sealing material on the semiconductor element means the thickness of the sealing material covering the surface of the semiconductor element opposite to the lead frame or the circuit board mounting surface, and one or more semiconductor elements Means the thickness of the sealing material covering the surface of the uppermost semiconductor element opposite to the lead frame or the circuit board mounting surface. is there.
- the granular resin composition in the case where a semiconductor device is obtained by sealing a semiconductor element by compression molding using the first granular epoxy resin composition for semiconductor encapsulation, the granular resin composition It is possible to obtain a granular epoxy resin composition for encapsulating a semiconductor that can prevent sticking of objects, reduce unevenness of the product, improve transportability, and further improve productivity.
- a semiconductor element is sealed by compression molding, thereby avoiding problems such as defective filling and wire flow, and providing a highly reliable semiconductor device. Can be manufactured.
- the first granular epoxy resin composition for encapsulating a semiconductor is a semiconductor device in which a lead frame, a circuit board and a semiconductor element are connected by a fine pitch wire, a long wire, a small diameter wire or the like, particularly on the semiconductor element.
- the sealing material can be suitably used for a semiconductor device having a thickness of 0.5 mm or less.
- the lower limit value of the ratio D1 / D2 between the granule density D1 and the cured product specific gravity D2 is preferably 0.88 or more, 0.88 More preferably, it is more preferably 0.90 or more.
- the upper limit value of D1 / D2 is preferably 0.97 or less, more preferably 0.95 or less, and further preferably 0.94 or less.
- the granule density D1 of the granular resin composition is preferably 1.95 or less, and more preferably 1.90 or less.
- the lower limit value of the granule density D1 of the granular resin composition is not particularly limited, but is desirably 1.75 or more which is a range in which the porosity inside the particles does not become excessively high.
- the granule density D1 is measured by sieving the granular resin composition with a JIS standard sieve of 32 mesh (aperture 500 ⁇ m) for easy handling, and then adding about 5 g of the granular resin composition on the sieve. A sample weighed to 0.1 mg was used. After filling the pycnometer (capacity 50 cc) with distilled water and adding several drops of surfactant, the mass of the pycnometer containing distilled water and the surfactant was measured. Next, the sample is put into a pycnometer, the mass of the entire pycnometer containing distilled water, a surfactant, and the sample is measured, and calculated according to the following formula.
- Granule density (g / ml) (Mp ⁇ ⁇ w) / (Mw + Mp ⁇ Mt) ⁇ w: density of distilled water at the measurement temperature (g / ml)
- Mw Mass of a pycnometer filled with distilled water and further added with a few drops of surfactant (g)
- Mp sample mass
- Mt Mass of the pycnometer containing distilled water, surfactant and sample (g)
- the surfactant is used to increase the wetting of distilled water and the sample and minimize the entrainment of bubbles.
- the surfactant is used, and a material that eliminates entrainment of bubbles may be selected.
- the second granular epoxy resin composition for encapsulating a semiconductor is used for a semiconductor device in which a semiconductor element is encapsulated by compression molding, but the value does not change depending on the molding method.
- a method for measuring the cured product specific gravity D2 the method for measuring the cured product specific gravity by transfer molding, which is a simpler method, is used.
- the granular resin composition is once compressed into tablets of a predetermined size, and using a transfer molding machine, the mold temperature is 175 ⁇ 5 ° C., the injection pressure is 7 MPa, the curing time is 120 seconds, the diameter is 50 mm ⁇ A method of forming a disk having a thickness of 3 mm, calculating the mass and volume, and calculating the specific gravity of the cured product is exemplified.
- the particle size distribution, the ratio D1 / D2 of the granule density D1 and the cured product specific gravity D2 after curing, and the granule density D1 are within the above-mentioned ranges. Is achieved by using a method for obtaining a granular epoxy resin composition for encapsulating a semiconductor, which will be described later, or by adjusting the types and blending ratios of the epoxy resin, the curing agent and the curing accelerator.
- the second granular epoxy resin composition for encapsulating a semiconductor will be described with reference to the problems peculiar to the compression molding method.
- the granular resin composition can always stably supply a certain amount. is necessary.
- clogging or supply time Delays in supply, uneven supply to the mold, and problems such as a significant drop in productivity and insufficient filling.
- the second granular epoxy resin composition for encapsulating a semiconductor is an epoxy resin composition for encapsulating a semiconductor used for a semiconductor device in which a semiconductor element is encapsulated by compression molding.
- the proportion of coarse particles of 2 mm or more in the particle size distribution measured by sieving using a JIS standard sieve is 3% by mass or less and the proportion of fine powder of less than 106 ⁇ m is 5% with respect to the entire epoxy resin composition for fixing. %
- the ratio D1 / D2 between the granule density D1 of the epoxy resin composition for semiconductor encapsulation and the cured product specific gravity D2 after curing of the epoxy resin composition for semiconductor encapsulation is 0.88-0. The range is 97.
- the manufacturing method of the semiconductor device of the present invention is characterized in that the semiconductor element is sealed by compression molding using the granular epoxy resin composition for semiconductor sealing described above.
- a semiconductor device can be manufactured while avoiding defects such as defective filling.
- the granular resin composition in the case where a semiconductor device is obtained by sealing a semiconductor element by compression molding using the second granular epoxy resin composition for semiconductor encapsulation, the granular resin composition It is possible to obtain a granular epoxy resin composition for encapsulating a semiconductor that prevents sticking of objects, improves transportability, and further improves productivity. Also, by using this granular epoxy resin composition for semiconductor encapsulation, a semiconductor element is sealed by compression molding, thereby avoiding defects such as defective filling and manufacturing a highly reliable semiconductor device. be able to.
- the second granular epoxy resin composition for encapsulating a semiconductor is preferably used for a semiconductor device in which a lead frame, a circuit board and a semiconductor element are connected by a fine pitch wire, a long wire, a small diameter wire or the like. it can.
- the first granular epoxy resin composition for encapsulating a semiconductor has the constitution X1, X2 or X3.
- the first granular epoxy resin composition for encapsulating a semiconductor may include the configurations Y1 and Y2 of the second granular epoxy resin composition for encapsulating a semiconductor.
- the second granular epoxy resin composition for encapsulating a semiconductor has configurations Y1 and Y2.
- the 2nd granular epoxy resin composition for semiconductor sealing may be equipped with the structure X1, X2 or X3 of the 1st granular epoxy resin composition for semiconductor sealing.
- components of the granular epoxy resin composition for encapsulating a semiconductor used for a semiconductor device in which a semiconductor element is encapsulated by compression molding will be described.
- An epoxy resin can be used for the granular epoxy resin composition for semiconductor encapsulation of the present invention.
- examples of the epoxy resin to be used are monomers, oligomers and polymers in general having two or more epoxy groups in one molecule, and the molecular weight and molecular structure thereof are not particularly limited.
- biphenyl type epoxy resin bisphenol Crystalline epoxy resins such as A-type epoxy resins, bisphenol F-type epoxy resins, stilbene-type epoxy resins, hydroquinone-type epoxy resins; novolak-type epoxy resins such as cresol novolac-type epoxy resins, phenol novolac-type epoxy resins, and naphthol novolak-type epoxy resins
- Phenolic aralkyl epoxy such as phenylene skeleton-containing phenol aralkyl epoxy resin, biphenylene skeleton-containing phenol aralkyl epoxy resin, phenylene skeleton-containing naphthol aralkyl epoxy resin Fats
- Trifunctional epoxy resins such as triphenolmethane type epoxy resins and alkyl modified triphenolmethane type epoxy resins
- Modified phenol type epoxy resins such as dicyclopentadiene modified phenol type epoxy resins and terpene modified phenol type epoxy resins
- Triazine nucleus examples thereof include heterocyclic
- a curing agent can be used for the granular epoxy resin composition for semiconductor encapsulation of the present invention.
- the curing agent used is not particularly limited as long as it can be cured by reacting with an epoxy resin, and examples thereof include straight chain fats having 2 to 20 carbon atoms such as ethylenediamine, trimethylenediamine, tetramethylenediamine, and hexamethylenediamine.
- Resol type phenol resins such as phosphorus-modified resole resin and dimethyl ether resole resin
- Novolak type phenol resins such as phenol novolak resin, cresol novolak resin, tert-butylphenol novolak resin, nonylphenol novolak resin
- phenylene skeleton-containing phenol aralkyl resin biphenylene skeleton-containing phenol Phenol aralkyl resins such as aralkyl resins
- phenol resins having a condensed polycyclic structure such as naphthalene skeleton and anthracene skeleton
- polyoxystyrenes such as polyparaoxystyrene
- HHPA hexahydrophthalic anhydride
- MTHPA methyltetrahydrophthalic anhydride
- Alicyclic acid anhydrides such as trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), benzophenone te
- the curing agent used for the semiconductor encapsulating material is preferably a compound having at least two phenolic hydroxyl groups in one molecule from the viewpoint of moisture resistance, reliability, etc., and a phenol novolac resin and cresol novolac.
- novolak-type phenol resins such as resins, tert-butylphenol novolak resins and nonylphenol novolak resins; resol-type phenol resins; polyoxystyrenes such as polyparaoxystyrene; phenylene skeleton-containing phenol aralkyl resins and biphenylene skeleton-containing phenol aralkyl resins.
- an inorganic filler can be used.
- the inorganic filler to be used is not particularly limited as long as it is generally used for semiconductor sealing materials.
- Silica such as fused crushed silica, fused spherical silica, crystalline silica, secondary agglomerated silica; alumina; titanium White; aluminum hydroxide; talc; clay; mica; glass fiber and the like.
- fused spherical silica is particularly preferable.
- the particle shape is preferably infinitely spherical.
- the inorganic filling amount by mixing particles having different particle sizes, but the particle size is 0.01 ⁇ m in consideration of the filling property around the semiconductor element in the mold cavity. As mentioned above, it is desirable that it is 150 micrometers or less.
- a curing accelerator can be used in the granular epoxy resin composition for encapsulating a semiconductor of the present invention. Any curing accelerator may be used as long as it accelerates the curing reaction between the epoxy group and the curing agent, and those generally used for semiconductor sealing materials can be used.
- diazabicycloalkenes such as 1,8-diazabicyclo (5,4,0) undecene-7 and derivatives thereof; amine compounds such as tributylamine and benzyldimethylamine; imidazole compounds such as 2-methylimidazole; Organic phosphines such as phosphine and methyldiphenylphosphine; tetraphenylphosphonium / tetraphenylborate, tetraphenylphosphonium / tetrabenzoic acid borate, tetraphenylphosphonium / tetranaphthoic acid borate, tetraphenylphosphonium / tetranaphthoyloxyborate, tetraphenyl Tetra-substituted phosphonium / tetra-substituted borate such as phosphonium / tetranaphthyloxyborate; tripheny
- a coupling agent such as ⁇ -glycidoxypropyltrimethoxysilane
- a colorant such as carbon black
- Release agents such as natural wax, synthetic wax, higher fatty acid or metal salts thereof, paraffin and polyethylene oxide
- low stress agent such as silicone oil and silicone rubber
- ion scavenger such as hydrotalcite
- flame retardant such as aluminum hydroxide
- additives such as antioxidants can be blended.
- a cylindrical outer peripheral portion having a plurality of small holes and a disc-shaped bottom surface A method in which a melt-kneaded resin composition is supplied to the inside of a rotor composed of the following, and the resin composition is obtained by passing through a small hole by centrifugal force obtained by rotating the rotor (hereinafter, “ It is also referred to as “centrifugal milling.”) After each raw material component is premixed by a mixer, heated and kneaded by a kneader such as a roll, a kneader or an extruder, then cooled and pulverized to obtain a pulverized product, using a sieve A method obtained by removing coarse particles and fine powder (hereinafter also referred to as “grinding and sieving method”); after premixing each raw material component with a mixer, a die having a plurality of small diameters installed at the screw tip When kneading by heating using an extruder
- the particle size distribution and granule density of the present invention can be obtained by selecting kneading conditions, centrifugal conditions, sieving conditions, cutting conditions and the like.
- a particularly preferred production method is centrifugal milling, and the granular resin composition obtained thereby can stably express the particle size distribution and granule density of the present invention. Preferred for preventing sticking.
- the particle surface can be smoothed to some extent, so that the particles are not caught and the frictional resistance with the surface of the conveying path does not increase, and the bridge ( This is also preferable for prevention of clogging) and prevention of retention on the conveyance path.
- the centrifugal milling method is advantageous in terms of transportability in compression molding because the particles are formed using a centrifugal force from a melted state, so that the voids are included in the particles to some extent and the granule density can be lowered to some extent.
- the pulverization sieving method expresses the particle size distribution of the present invention, such as selection of sheet thickness when forming a molten resin sheet before pulverization, selection of pulverization conditions and screen during pulverization, selection of sieving during sieving, etc. Since there are many factors that can be controlled independently, it is preferable in that there are many choices of means for adjusting to a desired particle size distribution.
- the hot cut method is also preferable in that a conventional production line can be used as it is, for example, by adding a hot cut mechanism to the tip of the extruder.
- FIG. 6 is a schematic view of one example from the melt kneading of the resin composition to the collection of the granular resin composition to obtain a granular semiconductor sealing resin composition
- FIG. 8 is a cross-sectional view of an embodiment of an exciting coil for heating the cylindrical outer peripheral portion of the rotor
- FIG. 8 shows an embodiment of a double-pipe cylindrical body that supplies a melted and kneaded resin composition to the rotor. Cross-sectional views are shown respectively.
- the resin composition melt-kneaded by the twin-screw extruder 309 is supplied to the inside of the rotor 301 through a double-pipe cylindrical body 305 cooled by passing a refrigerant between the inner wall and the outer wall.
- the double-pipe cylindrical body 305 is preferably cooled using a refrigerant so that the melt-kneaded resin composition does not adhere to the wall of the double-pipe cylindrical body 305.
- the particle shape and particle size distribution of the granular resin composition can be adjusted by controlling the molten resin discharge temperature and the like according to the kneading conditions in the twin screw extruder 309. Further, by incorporating a degassing device in the twin-screw extruder 309, the entrainment of bubbles in the particles can be controlled.
- the rotor 301 is connected to a motor 310 and can be rotated at an arbitrary rotation number, and the particle shape and particle size distribution of the granular resin composition can be adjusted by appropriately selecting the rotation number.
- a cylindrical outer peripheral portion 302 having a plurality of small holes installed on the outer periphery of the rotor 301 includes a magnetic material 303, and an AC power source generated by an AC power generator 306 in an excitation coil 304 provided in the vicinity thereof. Is heated by eddy current loss and hysteresis loss accompanying the passage of the alternating magnetic flux generated by energizing.
- this magnetic material 303 iron material, silicon steel, etc.
- the vicinity of the small holes in the cylindrical outer peripheral portion 302 having a plurality of small holes may not be formed of the same material as that of the magnetic material 303.
- it is formed of a nonmagnetic material having high thermal conductivity, and magnetically above and below it.
- the vicinity of the small hole of the cylindrical outer peripheral portion 302 can be heated by heat conduction using the heated magnetic material 303 as a heat source.
- the nonmagnetic material include copper and aluminum, and one type or two or more types of nonmagnetic materials can be used in combination.
- the resin composition in contact with the heated cylindrical outer peripheral portion 302 having a plurality of small holes easily passes through the small holes of the cylindrical outer peripheral portion 302 and is discharged without increasing the melt viscosity.
- the heating temperature can be arbitrarily set depending on the characteristics of the applied resin composition. By appropriately selecting the heating temperature, the particle shape and particle size distribution of the granular resin composition can be adjusted. In general, if the heating temperature is raised too much, the resin composition hardens and the fluidity may decrease or the small holes in the cylindrical outer peripheral portion 302 may be clogged. Since the contact time between the resin composition and the cylindrical outer peripheral portion 302 is extremely short, the influence on the fluidity is extremely small.
- cylindrical outer peripheral portion 302 having a plurality of small holes is uniformly heated, there is very little local change in fluidity.
- the plurality of small holes in the cylindrical outer peripheral portion 302 can adjust the particle shape and particle size distribution of the granular resin composition by appropriately selecting the hole diameter.
- the granular resin composition discharged through the small holes in the cylindrical outer peripheral portion 302 is collected, for example, in an outer tank 308 installed around the rotor 301.
- the outer tank 308 is a granular material that flies through a small hole in the cylindrical outer peripheral portion 302 in order to prevent adhesion of the granular resin composition to the inner wall and fusion between the granular resin compositions.
- the collision surface on which the resin composition collides is preferably installed with an inclination of 10 to 80 degrees, preferably 25 to 65 degrees with respect to the flight direction of the granular resin composition.
- the collision energy of the granular resin composition can be sufficiently dispersed, and there is little possibility of adhesion to the wall surface.
- the slope of the collision surface with respect to the flight direction of the resin composition is equal to or greater than the above lower limit value, the flight speed of the granular resin composition can be sufficiently reduced. However, there is little risk of adhering to the exterior wall surface.
- a cooling jacket 307 is provided on the outer periphery of the collision surface to cool the collision surface.
- the inner diameter of the outer tub 308 is set to such a size that the granular resin composition is sufficiently cooled and adhesion of the granular resin composition to the inner wall and fusion between the granular resin compositions do not occur. It is desirable. In general, an air flow is generated by the rotation of the rotor 301 and a cooling effect is obtained, but cold air may be introduced as necessary.
- the size of the outer tank 308 depends on the amount of resin to be processed, for example, when the diameter of the rotor 301 is 20 cm, adhesion and fusion can be prevented if the inner diameter of the outer tank 308 is about 100 cm.
- the semiconductor device of the present invention formed by sealing a semiconductor element by compression molding using a granular epoxy resin composition for semiconductor encapsulation will be described.
- the method for obtaining a semiconductor device by sealing a semiconductor element by compression molding using the granular resin composition of the present invention is as described above.
- the semiconductor element sealed with the semiconductor device of the present invention is not particularly limited, and examples thereof include an integrated circuit, a large-scale integrated circuit, a transistor, a thyristor, a diode, and a solid-state imaging element.
- the form of the semiconductor device of the present invention is not particularly limited, and examples thereof include a ball grid array (BGA), a MAP type BGA, and the like. Also applicable to chip size package (CSP), quad flat non-ready package (QFN), small outline non-ready package (SON), lead frame BGA (LF-BGA), etc. .
- BGA ball grid array
- CSP chip size package
- QFN quad flat non-ready package
- SON small outline non-ready package
- LF-BGA lead frame BGA
- the semiconductor device of the present invention in which the semiconductor element is encapsulated with the cured resin composition by compression molding is completely cured as it is or at a temperature of about 80 ° C. to 200 ° C. for about 10 minutes to 10 hours. Later, it is mounted on an electronic device or the like.
- a lead frame or a circuit board one or more semiconductor elements stacked or mounted in parallel on the lead frame or the circuit board, and bonding wires for electrically connecting the lead frame or the circuit board and the semiconductor element
- a semiconductor device including a semiconductor element and a sealing material for sealing a bonding wire will be described in detail with reference to the drawings, but the present invention is not limited to the one using a bonding wire.
- FIG. 9 is a diagram showing a cross-sectional structure of an example of a semiconductor device obtained by sealing a semiconductor element mounted on a lead frame using the epoxy resin composition for semiconductor sealing according to the present invention.
- a semiconductor element 401 is fixed on the die pad 403 through a die bond material cured body 402.
- the electrode pad of the semiconductor element 401 and the lead frame 405 are connected by a wire 404.
- the semiconductor element 401 is sealed with a sealing material 406 made of a cured body of an epoxy resin composition for semiconductor sealing.
- FIG. 10 is a diagram showing a cross-sectional structure of an example of a semiconductor device obtained by sealing a semiconductor element mounted on a circuit board using the epoxy resin composition for semiconductor sealing according to the present invention.
- a semiconductor element 401 is fixed on a circuit board 408 through a die bond material cured body 402.
- the electrode pad 407 of the semiconductor element 401 and the electrode pad 407 on the circuit board 408 are connected by a wire 404. Only one side of the circuit board 408 on which the semiconductor element 401 is mounted is sealed with a sealing material 406 made of a cured body of an epoxy resin composition for semiconductor sealing.
- the electrode pad 407 on the circuit board 408 is bonded to the solder ball 409 on the non-sealing surface side on the circuit board 408 inside.
- Example 1-1 Composition of resin composition (parts by mass)>
- Epoxy resin 1 Phenol aralkyl type epoxy resin containing phenylene skeleton (manufactured by Nippon Kayaku Co., Ltd., NC-3000, softening point 58 ° C., epoxy equivalent 277) 8.0 parts by mass
- Epoxy resin 2 Bisphenol A type epoxy resin ( YL6810, manufactured by Japan Epoxy Resin Co., Ltd. Melting point: 45 ° C., epoxy equivalent: 172.
- Phenol resin 2 Phenol novolak resin (manufactured by Sumitomo Bakelite Co., Ltd., PR-HF-3, softening point 80 ° C., hydroxyl group equivalent 105) 2.6 parts by mass Curing accelerator (Triphenylphosphine) 0.2 parts by mass Inorganic filler (average particle size 16 ⁇ m Fused spherical silica) 84.0 parts by mass Carnauba wax 0.1 part by weight of carbon black 0.3 parts by weight coupling agent 0.2 part by weight
- An iron punched wire net having a small hole with a hole diameter of 2.5 mm was used as the material of the cylindrical outer peripheral portion 302 shown in FIG.
- a punched wire net having a height of 25 mm and a thickness of 1.5 mm processed into a cylindrical shape was attached to the outer periphery of a rotor 301 having a diameter of 20 cm, thereby forming a cylindrical outer peripheral portion 302.
- the rotor 301 was rotated at 3000 RPM, and the cylindrical outer peripheral portion 302 was heated to 115 ° C. with an exciting coil.
- a granular resin composition was obtained by passing through a plurality of small holes. Details of the production conditions are shown in Table 1.
- Particle amount of 2 mm or more, particle amount of 1 mm or more and less than 2 mm, and fine powder amount of less than 106 ⁇ m A sample obtained by weighing 40 g of the obtained granular resin composition to 1 mg was used as a sample. JIS standard sieves with mesh openings of 2.00 mm, 1.00 mm, and 106 ⁇ m installed in a low tap sieve vibrator (manufactured by Maruhishi Kagaku Kikai Seisakusho, Model-SS-100A) were vibrated for 20 minutes. The sample was classified by passing through a sieve while hammering (number of hammer hits: 120 times / min).
- the mass of the fine powder that passed through the 106 ⁇ m sieve, the mass of the particles that remained on the 1 mm sieve after passing through the 2 mm sieve, and the mass of the particles that remained on the 2 mm sieve were measured.
- the mass ratio to the mass was determined.
- Ratio of particles having a longest length (L) of 5 mm or less and a shortest length (S) of 1 mm or less The obtained granular resin composition was mixed with a low-tap type sieve vibrator (manufactured by Maruhishi Kagaku Kikai Seisakusho, Model-SS-100A The sample was classified by passing through a sieve while vibrating the sieve for 20 minutes (number of hammer hits: 120 times / minute) to remove fine powder of less than 106 ⁇ m. Next, 100 particles are randomly selected from the particles remaining on the 106 ⁇ m sieve, the longest length (L) and the shortest length (S) of each particle are measured, and the longest length (L) is 5 mm.
- the particles having the shortest length (S) of 1 mm or less and the other particles were sorted.
- the ratio of the total mass of the particles having the longest length (S) of 5 mm or less and the shortest length of 1 mm or less to the total mass of 100 particles before sorting is determined, and the longest length (L) is 5 mm or less.
- the ratio of particles having a shortest length (S) of 1 mm or less was used.
- Repose angle, collapse angle, difference angle As shown in FIG. 5, a funnel is placed toward the center of a disc-shaped horizontal plate 205 having a diameter of 80 mm provided in a powder tester (Model-PT-E manufactured by Hosokawa Micron Corporation). A granular resin composition was introduced from the vertical direction using 201 to form a conical granule 204 on a horizontal plate 205. The granular resin composition was charged until the cone maintained a constant shape, and the elevation angle ( ⁇ ) was obtained as shown in FIG.
- 109 g of weight on the same pedestal 206 as the horizontal plate 205 is dropped three times from a height of 160 mm, and after a part of the granular resin composition collapses and falls off due to impact, a protractor is used. Then, the elevation angle ( ⁇ ) was obtained as shown in FIG. Further, the difference between the measured angle of repose and the collapse angle was determined and used as the difference angle.
- the criteria for determining the collapse angle were ⁇ when 25 ° or less, ⁇ when higher than 25 ° and 30 ° or less, ⁇ when higher than 30 °, and ⁇ when higher than 35 °.
- Sprinkling unevenness and adhesiveness As shown in FIG. 11, 120 g of the granular resin composition was put into a hopper 501 of a vibration feeder 500 (manufactured by A & D, dimensions of trough 503: 450 mm long ⁇ 55 mm wide). The gap is adjusted to 0.4 mm, and the granular resin composition is conveyed with constant vibration so that the initial conveyance speed is 10 g / min. The granular resin composition 511 is transferred in a container 512 placed on a scale 513. The mass was measured every minute and the increase in mass was examined. In addition, after the measurement is completed, the resin particles adhere to each other, adhere to the inner surface of the feeder, or visually check for particles or fine particles that are clogged in the middle.
- Wire flow rate As shown in FIG. 12, a fixed amount is conveyed using a vibration feeder to prepare a resin material supply container 607 containing a granular resin composition 606, and an upper mold 601 of a compression mold. On a circuit board 603 having a thickness of 0.5 mm, a width of 50 mm, and a length of 210 mm made of a glass base epoxy resin copper-clad laminate having a heat resistance grade of FR-4.
- 12 semiconductor elements 604 were collectively encapsulated by a compression molding machine (manufactured by TOWA Co., Ltd.) while reducing the pressure inside the cavity, thereby obtaining a MAP molded product.
- the molding conditions at this time were a mold temperature of 175 ° C., a molding pressure of 3.9 MPa, and a curing time of 120 seconds.
- the obtained MAP molded product is separated into pieces by dicing, and a simulated semiconductor device (semiconductor element 604 and gold wire 605 are sealed with a sealing material 611 which is a cured body of a resin composition as shown in FIG.
- the thickness (t) of the sealing material 611 over the semiconductor element 604 is 0.5 mm.
- the wire flow rate in the obtained simulated semiconductor device was determined for the four longest gold wires (length: 5 mm) on the diagonal of the package. The average flow rate was measured, and the wire flow rate (wire flow rate / wire length ⁇ 100 (%)) was calculated. The criterion was that the wire flow rate was 3% or higher. In addition, a wire flow rate of less than 3% and 2% or more was judged as ⁇ , and a wire flow rate of less than 2% was judged as ⁇ .
- first semiconductor elements 702 are bonded using silver paste at equal intervals, and a second semiconductor element 703 having the same dimensions is bonded to the first semiconductor element 702 in the XY plane.
- Simulated elements 704 bonded with the silver paste on the corresponding first semiconductor elements 702 were prepared at positions rotated by 90 °.
- the one that completely fills the periphery of all the simulated elements is 1; the one that has poor filling such as nests and voids around 1 to 5 simulated elements; Those in which defective filling such as nests and voids occurred around six or more simulated elements were determined as x.
- the obtained results are shown in Table 1.
- Comparative Example 1-4 The raw material of the resin composition is pulverized and mixed for 5 minutes with a super mixer, then melt kneaded with a twin screw extruder 309 at a kneading temperature of 100 ° C., further cooled with a cooling belt, and then roughly pulverized with a hammer mill to obtain an average particle size.
- a coarsely pulverized product having a diameter of 800 ⁇ m and a particle size distribution of 40 ⁇ m to 10 mm was obtained.
- Examples 1-9 to 1-11, Comparative Examples 1-5 to 1-7 The granular resin composition obtained in Comparative Example 1-4 was further used with JIS standard sieves having openings of 2.00 mm, 1.00 mm, and 106 ⁇ m provided in a low-tap type sieve vibrator, and these sieves were allowed to stand for 20 minutes.
- the sample was passed through a sieve while being vibrated (number of hammer hits: 120 times / minute) and classified, and each classification component of the granular resin composition was formulated so as to have a particle size distribution as shown in Table 2.
- a resin composition having a predetermined particle size distribution was obtained, and the same test as in Example 1-1 was performed. The obtained results are shown in Table 2.
- the ratio of particles of 2 mm or more in the particle size distribution measured by sieving using a JIS standard sieve is 3% with respect to the total resin composition. % Or less, the ratio of particles of 1 mm or more and less than 2 mm is 0.5% by mass or more, 60% by mass or less, and the ratio of fine powder of less than 106 ⁇ m is 5% by mass or less.
- the wire flow was small, and good filling properties were obtained.
- Example 2-1 Composition of resin composition (parts by mass)>
- Epoxy resin 1 Biphenylene skeleton-containing phenol aralkyl type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., NC-3000, softening point 58 ° C., epoxy equivalent 277)
- Epoxy resin 2 Bisphenol A type epoxy resin ( YL6810, manufactured by Jaban Epoxy Resin Co., Ltd.
- Phenol resin 1 phenol aralkyl resin containing biphenylene skeleton (Nippon Kayaku Co., Ltd., GPL-65, softening point 65) ° C, hydroxyl group equivalent 198.) 8.0 parts by weight Curing accelerator (triphenylphosphine) 0.2 parts by weight Inorganic filler (melted spherical silica having an average particle size of 16 ⁇ m) 81.2 parts by weight Carnauba wax 0.1 parts by weight Carbon black 0.3 part by mass Coupling agent 0. 2 parts by mass
- An iron punched wire net having a small hole with a hole diameter of 2.5 mm was used as the material of the cylindrical outer peripheral portion 302 shown in FIG.
- a punched wire net having a height of 25 mm and a thickness of 1.5 mm processed into a cylindrical shape was attached to the outer periphery of a rotor 301 having a diameter of 20 cm, thereby forming a cylindrical outer peripheral portion 302.
- the rotor 301 was rotated at 3000 RPM, and the cylindrical outer peripheral portion 302 was heated to 115 ° C. with an exciting coil.
- a granular resin composition was obtained by passing through a plurality of small holes. Details of the production conditions are shown in Table 3.
- Granule density (D1) The obtained granular resin composition was used in a low-tap type sieve vibrator (manufactured by Maruhishi Kagaku Kikai Seisakusho, Model-SS-100A), using a JIS standard sieve with an aperture of 106 ⁇ m. The sample was passed through a sieve while being vibrated over 20 minutes (number of hammer hits: 120 times / minute), and fine particles of less than 106 ⁇ m were removed. Subsequently, the granule density was calculated
- Cured product specific gravity (D2) The obtained granular resin composition was once compressed into tablets of a predetermined size, using a transfer molding machine, mold temperature 175 ⁇ 5 ° C., injection pressure 7 MPa, curing time 120 seconds. Then, a disk having a diameter of 50 mm and a thickness of 3 mm was formed, and the mass and volume were determined to calculate the specific gravity of the cured product.
- 300 g of a granular resin composition sample is a hopper having a vibration feeder 500 (manufactured by A & D, gap of gate 502: 0.4 mm, dimensions of trough 503: 450 mm length ⁇ 55 mm width).
- the initial conveyance speed was adjusted to the strength of vibration at 10 g / min, and 300 g of conveyance time was measured. After the conveyance, conditions such as adhesion between particles, adhesion to the vibration feeder 500, and clogging during the process were observed.
- Judgment criteria for transportability are A within transport time (29 minutes), B within the range of (29 minutes) to (30 minutes), C within the range of (30 minutes) to (31 minutes), (31 minutes) The range of (32 minutes) was D, (32 minutes) or more was E, and A, B, and C were acceptable.
- the frequency in the transportability test was measured at the same frequency without changing in other examples and comparative examples.
- Judgment criteria for stickiness are: ⁇ if there is no sticking, sticking or clogging, ⁇ if there is sticking, sticking or clogging but no hindrance to continuous transport, and there are many sticking, sticking or clogging.
- a case where the subsequent transportability was slightly inferior was evaluated as ⁇ , and a case where the adherence, adhesion or clogging was remarkable, and the subsequent transportability due to them was markedly evaluated as x.
- a certain amount of material is conveyed using a vibration feeder to prepare a resin material supply container 607 in which a granular resin composition 606 is placed, and an upper mold 601 of a compression mold
- the thickness is 0. 12 pieces of semiconductor elements 604 of 25 mm and 10 mm square bonded with silver paste were fixed to the upper mold 601 by the substrate fixing means 602 so that the surface on which the semiconductor elements 604 were mounted faced downward.
- the shutter 608 constituting the bottom surface of the resin material supply container 607 is slid horizontally to supply the granular resin composition 606 into the lower mold cavity 610, and then the resin material supply container 607 is removed from the mold. Carried out.
- 12 semiconductor elements 604 were collectively encapsulated by a compression molding machine (manufactured by TOWA Co., Ltd.) while reducing the pressure inside the cavity, thereby obtaining a MAP molded product.
- the molding conditions at this time were a mold temperature of 175 ° C., a molding pressure of 3.9 MPa, and a curing time of 120 seconds.
- the obtained MAP molded product was not separated into pieces, and the filling property was evaluated as it was using an ultrasonic flaw detector (manufactured by Hitachi Construction Machinery Finetech Co., Ltd., mi-scope hyper II).
- the one that completely fills the periphery of all the simulated elements is 1; the one that has poor filling such as nests and voids around 1 to 5 simulated elements; Those in which defective filling such as nests and voids occurred around six or more simulated elements were determined as x.
- Table 3 The obtained results are shown in Table 3.
- Example 2-1 A granular resin composition was prepared in the same manner as in Example 2-1, except that the amount of the inorganic filler and the production conditions of the granular resin composition were as shown in Table 3 in Example 2-1. .
- Comparative Example 2-1 kneading was performed without degassing during melt kneading with a twin screw extruder. The same test as in Example 2-1 was performed, and the results obtained are shown in Table 3.
- Comparative Example 2-2 The raw material having the composition of Example 2-1 was pulverized and mixed for 5 minutes with a super mixer, melt-kneaded at a kneading temperature of 100 ° C. with a twin-screw extruder 309 while being deaerated with a deaerator, and further cooled with a cooling belt, Coarse pulverization was performed with a hammer mill to obtain a coarsely pulverized product having an average particle size of 800 ⁇ m and a particle size distribution of 40 ⁇ m to 10 mm. The obtained coarsely pulverized product was further pulverized with a pulverizer at 4000 rpm to obtain a granular resin composition. The same test as in Example 2-1 was performed, and the results obtained are shown in Table 4.
- Comparative Examples 2-3 and 2-4 The granular resin composition obtained in Comparative Example 2-2 was further equipped with a JIS standard sieve having an aperture of 106 ⁇ m and 2 mm provided in a low-tap type sieve vibrator (manufactured by Maruhishi Kagaku Kikai Seisakusho, Model-SS-100A). The sample was passed through the sieve while vibrating the sieve for 20 minutes (hammer strike rate: 120 times / minute) and classified into components of less than 106 ⁇ m, 106 ⁇ m to less than 2 mm, 2 mm, and the distribution shown in Table 4 Each component was adjusted so that a granular resin composition was prepared. The same test as in Example 2-1 was performed, and the results obtained are shown in Table 4.
- Comparative Example 2-5 In the composition of Example 2-1, the raw material with the amount of inorganic filler as shown in Table 4 was pulverized and mixed for 5 minutes with a super mixer, and then deaerated with a deaerator and then with a twin screw extruder 309. After melt-kneading at a kneading temperature of 100 ° C. and further cooling with a cooling belt, coarse pulverization was performed with a hammer mill to obtain a coarsely pulverized product having an average particle size of 800 ⁇ m and a particle size distribution of 40 ⁇ m to 10 mm.
- the obtained coarsely pulverized product was further pulverized with a pulverizer at 4000 rpm, and then a JIS standard sieve with an aperture of 106 ⁇ m and 2 mm provided on a low-tap type sieve vibrator (manufactured by Maruhishi Kagaku Kikai Seisakusho, Model-SS-100A).
- the sample is passed through the sieve while being vibrated for 20 minutes (hammer stroke: 120 times / min), classified into components of less than 106 ⁇ m, 106 ⁇ m to less than 2 mm, and 2 mm or more. Each component was adjusted so that a granular resin composition was prepared.
- the same test as in Example 2-1 was performed, and the results obtained are shown in Table 4.
- the ratio of coarse particles of 2 mm or more in the particle size distribution measured by sieving using a JIS standard sieve was 3 with respect to the total resin composition.
- the ratio of fine powders of mass% or less and less than 106 ⁇ m is 5 mass% or less, and the ratio D1 / D2 of granule density D1 and cured product specific gravity D2 is in the range of 0.88 to 0.97.
- the conveyance time did not become too long, and there was almost no occurrence of unevenness or sticking, and good filling properties were obtained.
- This application has priority based on Japanese Patent Application No. 2008-314064 filed on Dec. 10, 2008 and Japanese Patent Application No. 2008-314065 filed on Dec. 10, 2008. Claims and incorporates all of its disclosure here.
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Abstract
Description
圧縮成形により半導体素子を封止してなる半導体装置に用いる顆粒状の半導体封止用エポキシ樹脂組成物であって、
前記顆粒状の半導体封止用エポキシ樹脂組成物全体に対して、JIS標準篩を用いて篩分により測定した粒度分布における、2mm以上の粒子の割合が3質量%以下であり、1mm以上、2mm未満の粒子の割合が0.5質量%以上、60質量%以下であり、106μm未満の微粉の割合が5質量%以下であることを特徴とする顆粒状の半導体封止用エポキシ樹脂組成物が提供される。
圧縮成形により半導体素子を封止してなる半導体装置に用いる顆粒状の半導体封止用エポキシ樹脂組成物であって、
前記顆粒状の半導体封止用エポキシ樹脂組成物全体に対して、JIS標準篩を用いて篩分により測定した粒度分布における、2mm以上の粗粒の割合が3質量%以下であり、106μm未満の微粉の割合が5質量%以下であり、
当該半導体封止用エポキシ樹脂組成物の顆粒密度D1と当該半導体封止用エポキシ樹脂組成物の硬化後の硬化物比重D2との比D1/D2が、0.88以上、0.97以下の範囲であることを特徴とする顆粒状の半導体封止用エポキシ樹脂組成物が提供される。
第1の顆粒状の半導体封止用エポキシ樹脂組成物は、圧縮成形により半導体素子を封止してなる半導体装置に用いられ、以下の構成を備えるものである。
A:当該顆粒状の半導体封止用エポキシ樹脂組成物全体に対して、JIS標準篩を用いて篩分により測定した粒度分布における、2mm以上の粒子の割合が3質量%以下であり、
X1:1mm以上、2mm未満の粒子の割合が0.5質量%以上、60質量%以下であり、
B:106μm未満の微粉の割合が5質量%以下である。
X2:第1の顆粒状の半導体封止用エポキシ樹脂組成物は、JIS標準篩を用いて篩分により測定した粒度分布における106μm以上の粒子に対し、最長長さ(L)が5mm以下であり、かつ最短長さ(S)が1mm以下である粒子の割合が50質量%以上である。
X3:第1の顆粒状の半導体封止用エポキシ樹脂組成物の崩壊角が35°以下である。
第2の顆粒状の半導体封止用エポキシ樹脂組成物圧縮成形により半導体素子を封止してなる半導体装置に用いられ、以下の構成を備えるものである。
A:当該顆粒状の半導体封止用エポキシ樹脂組成物全体に対して、JIS標準篩を用いて篩分により測定した粒度分布における、2mm以上の粗粒の割合が3質量%以下であり、
B:106μm未満の微粉の割合が5質量%以下であり、
Y1:当該半導体封止用エポキシ樹脂組成物の顆粒密度D1と当該半導体封止用エポキシ樹脂組成物の硬化後の硬化物比重D2との比D1/D2が、0.88以上、0.97以下の範囲である。
Y2:第2の顆粒状の半導体封止用エポキシ樹脂組成物の顆粒密度D1が1.95以下である。
本発明の顆粒状の半導体封止用エポキシ樹脂組成物は、圧縮成形金型への安定した供給性と良好な秤量精度を得るため、JIS標準篩を用いて篩分により測定した粒度分布における、2mm以上の粒子の割合が全樹脂組成物に対して3質量%以下であることが好ましく、1質量%以下であることがより好ましい。これは、粒子サイズが大きくなるほどその質量、体積とも大きくなることから、サイズの大きな粒子の割合が多いほど、秤量時の秤量精度が低下し、成形後の半導体装置における品質低下の一因となったり、搬送路への供給口での詰まり等の問題が生じたりするところ、上記上限値以下の範囲とすると、良好な秤量精度が得られることで半導体装置における品質の低下を引き起こす恐れが低くなり、また搬送路への供給口での詰まり等の問題を生じる恐れも低くなるためである。また、2mm以上の粒子(粗粒)の割合の下限値については、特に限定されるものではなく、0質量%であってもよい。
また、本発明の顆粒状の半導体封止用エポキシ樹脂組成物は、安定した搬送性、生産性、安定した秤量精度を得るため、JIS標準篩を用いて篩分により測定した粒度分布における、106μm未満の微粉の割合が全樹脂組成物に対して5質量%以下であることが好ましく、3質量%以下であることがより好ましい。これは、106μm未満の微粉が、顆粒状の樹脂組成物の保管中における固着、顆粒状の樹脂組成物の搬送経路上での粒子同士の固着や搬送装置への付着を生じ、搬送不良の原因となり、連続生産性や生産のタクトタイムに支障をきたしたりするところ、上記上限値以下の範囲とすると、粒子同士の固着や搬送装置への付着が殆どなく、良好な連続生産性や安定した生産性が得られるためである。また、粒径106μm未満の微粉の割合の下限値については、特に限定されるものではなく、0質量%であってもよい。
また、第1の顆粒状の半導体封止用エポキシ樹脂組成物は、顆粒状の樹脂組成物の供給におけるばらつきによる圧縮成形金型への蒔きむらを低減させるために、JIS標準篩を用いて篩分により測定した粒度分布における、1mm以上、2mm未満の粒子の割合が全樹脂組成物に対して、下限値は0.5質量%以上であることが好ましく、5質量%以上であることがより好ましく、10質量%以上であることがさらに好ましい。また、上限値は、60質量%以下であることが好ましく、60質量%以下であることがより好ましく、55質量%以下であることがさらに好ましい。上記上限値以下の範囲とすると、供給ばらつきによる金型キャビティへの蒔きむらを抑えることができ、充填不良やワイヤ流れといった不具合を生じる恐れが低い。また、上記下限値以上の範囲とすると、小粒径成分が増大することによる粒子同士の固着や搬送路への付着を生じることがなく、搬送に支障をきたす恐れが低い。また、上記数値範囲内とすることにより、安定した生産性、成形性を得ることが可能となる。
また、第1の顆粒状の半導体封止用エポキシ樹脂組成物は、振動フィーダー等の搬送手段による搬送性、及び圧縮成形時の溶融性の観点から、最長長さ(L)が5mm以下であり、かつ最短長さ(S)が1mm以下である粒子が、106μm以上の粒子全体の50質量%以上であることが好ましく、80質量%以上であることがより好ましい。上記数値範囲内にすることにより、蒔きむらの原因となる搬送性と、溶融性とのバランスが取れ、安定した生産性、成形性が得られる。また、最長長さ(L)が5mmを上回る粒子の割合が少なければ、搬送時の供給速度の減速、搬送路への供給口での詰まり等の不具合を招く恐れが少ない。また、最短長さ(S)が1mmを上回る粒子の割合が少なければ、金型キャビティに投入されたときの溶解性にばらつきが生じる等の不具合を招く恐れが少ない。なお、最長長さ(L)、最短長さ(S)の測定方法としては、顆粒状の樹脂組成物を前述したJIS標準篩を用いた篩分により106μm以下の粒子を除去し、それ以上の粒子からランダムに100個の粒子を選び、ノギス、スケールが具備された顕微鏡等を用いて、1つ1つの粒子の最長長さ(L)と最短長さ(S)を測定して、最長長さ(L)が5mm以下で、かつ最短長さ(S)が1mm以下である粒子と、それ以外の粒子との仕分けをしたのち、最長長さ(L)が5mm以下であり、かつ最短長さ(S)が1mm以下である粒子の質量を測定し、測定サンプルの全質量に対する比率(質量%)を求めることで、全樹脂組成物における値として代表させることができる。なお、図3に示すように、1つ1つの粒子について、最も長い部分を最長長さ(L)とし、最も短い部分を最短長さ(S)とする。また、図4に示すように、粒子形状が屈曲しているような場合には、直線距離で最長の部分を測定すればよい。
また、第1の顆粒状の半導体封止用エポキシ樹脂組成物は、振動フィーダー等の搬送手段による搬送性の観点から、崩壊角(「崩潰角」ともいう。)が35°以下であることが好ましく、30°以下であることがより好ましく、25°以下であることがさらに好ましい。上記数値範囲内であると、振動フィーダー等の搬送手段を用いて顆粒状の樹脂組成物が搬送される際、固着や目詰まり等を起こしにくく安定して搬送することができる。また、崩壊角は低いほど固着や目詰まり等を起こし難くなるため、その下限値については特に限定されるものではないが、例えば、1°以上、或いは10°以上とすることができる。崩壊角の測定方法としては、図5に示すように顆粒状の樹脂組成物202を、漏斗201の孔から一定面積の水平板205の上に一定形状となるまで落下堆積させ、円錐状の顆粒体204を形成させる。次いで、水平板205と同じ台座206上にある一定の重さの分銅203を落下させることにより、該顆粒体204に一定の衝撃を与え、一部顆粒状の樹脂組成物が自然流動し水平板205から脱落した後、残った円錐状の顆粒体207について、底面外周の点から円錐の頂点までの仰角として、崩壊角を求めることができる。尚、衝撃を与える前の顆粒体204における仰角を安息角といい、安息角と崩壊角との差を差角という。差角は、振動フィーダー等の搬送装置からの振動等による顆粒状の樹脂組成物の崩れ易さを表す指標となるものであり、差角が大きいほど崩れ易いこととなるため、例えば、10°以上であることが好ましく、15°以上であることがより好ましい。崩壊角、安息角の測定装置としては、パウダーテスター(ホソカワミクロン(株)製)が挙げられる。
上記図1および図2のように、顆粒状の樹脂組成物を用いて半導体素子を封止する圧縮成形法の場合、圧縮成形金型の下型キャビティの底面に対して顆粒状の樹脂組成物が均一に蒔かれている必要がある。しかしながら、上記の例に限らず、振動フィーダー等の搬送手段を用いて顆粒状の樹脂組成物を搬送する工程を含む方法の場合においては、振動フィーダー等の搬送手段の搬送路で、顆粒状の樹脂組成物の粒子同士が固着したり、顆粒状の樹脂組成物が搬送路へ付着したりする場合がある。また、搬送路への供給口で顆粒状の樹脂組成物が目詰まり(ホッパーブリッジ)したり、搬送路上で顆粒状の樹脂組成物が滞留したりする場合もある。このような固着、付着、目詰まり、滞留等によって、振動フィーダー等の搬送手段による顆粒状の樹脂組成物の供給がばらつくと、圧縮成形金型の下型キャビティの底面に対して蒔きむらが発生することとなる。このような蒔きむらの発生により、下型キャビティの底面の場所によって顆粒状の樹脂組成物の量が少ない場所、多い場所が存在すると、半導体素子の封止成形時に顆粒状の樹脂組成物量の多い場所から少ない場所への横方向の流動が生じることとなり、これにより、半導体素子のワイヤ流れがおきたり、顆粒状の樹脂組成物の量が少ない場所において巣やボイド等の充填不良を起こしたりする可能性があった。また、顆粒状の樹脂組成物がある程度の粒度分布を有する場合には、その粒子形状(例えば球状)によっては粒子間の溶融速度のばらつきが起き易く、巣やボイド等の充填不良の問題が発生する場合があった。特に半導体素子上の封止材の厚みが薄い半導体装置の場合には、使用される樹脂組成物の量が少なくなるため、圧縮成形金型の下型キャビティへの蒔きむらの影響が顕著となり、ワイヤ流れや充填不足等の問題がより生じ易くなる。また、固着、付着、目詰まり、滞留等が起こると、搬送時間が長くかかることとなり、生産性が低下することにもなる。
第2の顆粒状の半導体封止用エポキシ樹脂組成物は、顆粒密度D1と硬化後の硬化物比重D2の比D1/D2の下限値は、0.88以上であることが好ましく、0.88以上であることがより好ましく、0.90以上であることがさらに好ましい。D1/D2の上限値は、0.97以下であることが好ましく、0.95以下であることがより好ましく、0.94以下であることがさらに好ましい。上記下限値以上とすると、粒子内部の空隙率が高くなり過ぎることがなく、成形時におけるボイドの発生等の問題が生じる恐れが低い。また、上記上限値以下とすると、顆粒密度が高くなり過ぎることがなく、振動フィーダー等の搬送手段による搬送時に顆粒の移動速度が遅くなる問題もない。移動速度が遅くなると停滞する恐れがあり、それによる固着、つまり等の問題が生じる。さらに、顆粒状の樹脂組成物の顆粒密度D1としては、1.95以下であることが好ましく、1.90以下であることがより好ましい。上記上限値以下とすると、良好な搬送性が得られる。また、顆粒状の樹脂組成物の顆粒密度D1の下限値としては、特に限定されるものではないが、粒子内部の空隙率が高くなり過ぎない範囲となる1.75以上とすることが望ましい。
顆粒密度(g/ml)=(Mp×ρw)/(Mw+Mp-Mt)
ρw:測定時の温度における蒸留水の密度(g/ml)
Mw:蒸留水を満たし、さらに界面活性剤を数滴添加したピクノメータの質量(g)
Mp:試料の質量(g)
Mt:蒸留水と界面活性剤と試料をいれたピクノメータの質量(g)
ここで、界面活性剤は蒸留水と試料の濡れを高め、気泡の巻き込みを極小にするために用いる。使用可能な界面活性剤は特に制限がなく、気泡の巻き込みがなくなるような材料を選択すればよい。
上記図1および図2の例に限らず、顆粒状の樹脂組成物を用いて半導体素子を封止する圧縮成形法の場合、顆粒状の樹脂組成物は常に一定量を安定して供給できることが必要である。搬送経路において顆粒状の樹脂組成物の搬送に乱れが生じる場合や、顆粒状の樹脂組成物の粒子同士の固着や搬送路への顆粒状の樹脂組成物の付着があると、詰まりや供給時間の延滞、金型への供給むらが起こり、生産性の大幅な低下、充填不足等の問題が生じる。
一方、第2の顆粒状の半導体封止用エポキシ樹脂組成物は、構成Y1やY2を備える。なお、第2の顆粒状の半導体封止用エポキシ樹脂組成物は、第1の顆粒状の半導体封止用エポキシ樹脂組成物の構成X1、X2またはX3を備えてもよい。
次に、本発明において、圧縮成形により半導体素子を封止してなる半導体装置に用いる顆粒状の半導体封止用エポキシ樹脂組成物の成分について説明する。本発明の顆粒状の半導体封止用エポキシ樹脂組成物には、エポキシ樹脂を用いることができる。用いられるエポキシ樹脂の例は、1分子内にエポキシ基を2個以上有するモノマー、オリゴマー、ポリマー全般であり、その分子量、分子構造を特に限定するものではないが、例えば、ビフェニル型エポキシ樹脂、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、スチルベン型エポキシ樹脂、ハイドロキノン型エポキシ樹脂等の結晶性エポキシ樹脂;クレゾールノボラック型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、ナフトールノボラック型エポキシ樹脂等のノボラック型エポキシ樹脂;フェニレン骨格含有フェノールアラルキル型エポキシ樹脂、ビフェニレン骨格含有フェノールアラルキル型エポキシ樹脂、フェニレン骨格含有ナフトールアラルキル型エポキシ樹脂等のフェノールアラルキル型エポキシ樹脂;トリフェノールメタン型エポキシ樹脂、アルキル変性トリフェノールメタン型エポキシ樹脂等の3官能型エポキシ樹脂;ジシクロペンタジエン変性フェノール型エポキシ樹脂、テルペン変性フェノール型エポキシ樹脂等の変性フェノール型エポキシ樹脂;トリアジン核含有エポキシ樹脂等の複素環含有エポキシ樹脂等が挙げられ、これらは1種類を単独で用いても2種類以上を組み合わせて用いてもよい。
次に、本発明の顆粒状の半導体封止用エポキシ樹脂組成物を得る方法について説明する。顆粒状の樹脂組成物を得る方法としては、本願発明の粒度分布や顆粒密度を満足すれば特に限定されるものではないが、例えば、複数の小孔を有する円筒状外周部と円盤状の底面から構成される回転子の内側に、溶融混練された樹脂組成物を供給し、その樹脂組成物を、回転子を回転させて得られる遠心力によって小孔を通過させて得る方法(以下、「遠心製粉法」とも言う。);各原料成分をミキサーで予備混合後、ロール、ニーダー又は押出機等の混練機により加熱混練後、冷却、粉砕工程を経て粉砕物としたものを、篩を用いて粗粒と微紛の除去を行って得る方法(以下、「粉砕篩分法」とも言う。);各原料成分をミキサーで予備混合後、スクリュー先端部に小径を複数配置したダイを設置した押出機を用いて、加熱混練を行うとともに、ダイに配置された小孔からストランド状に押し出されてくる溶融樹脂をダイ面に略平行に摺動回転するカッターで切断して得る方法(以下、「ホットカット法」とも言う。)等が挙げられる。いずれの方法でも混練条件、遠心条件、篩分条件、切断条件等を選ぶことにより本発明の粒度分布や顆粒密度を得ることができる。特に好ましい製法としては、遠心製粉法であり、これにより得られる顆粒状の樹脂組成物は、本発明の粒度分布や顆粒密度を安定して発現させることができるため、搬送路上での搬送性や固着防止に対して好ましい。また、遠心製粉法では、粒子表面をある程度滑らかにすることができるため、粒子同士が引っかかったり、搬送路面との摩擦抵抗が大きくなったりすることもなく、搬送路への供給口でのブリッジ(詰まり)の防止、搬送路上での滞留の防止に対しても好ましい。また、遠心製粉法では、溶融した状態から遠心力を用いて形成させるため、粒子内に空隙がある程度含まれた状態となり、顆粒密度をある程度低くできるため、圧縮成形における搬送性に関して有利である。
次に、顆粒状の半導体封止用エポキシ樹脂組成物を用いて圧縮成形により半導体素子を封止してなる本発明の半導体装置について説明する。なお、本発明の顆粒状の樹脂組成物を用いて圧縮成形により半導体素子を封止して半導体装置を得る方法は前述したとおりである。本発明の半導体装置で封止される半導体素子としては、特に限定されるものではなく、例えば、集積回路、大規模集積回路、トランジスタ、サイリスタ、ダイオード、固体撮像素子等が挙げられる。
[第1の顆粒状の半導体封止用エポキシ樹脂組成物]
実施例1-1
<樹脂組成物の配合(質量部)>
エポキシ樹脂1:フェニレン骨格含有フェノールアラルキル型エポキシ樹脂(日本化薬(株)製、NC-3000。軟化点58℃、エポキシ当量277。) 8.0質量部
エポキシ樹脂2:ビスフェノールA型エポキシ樹脂(ジャパンエポキシレジン(株)製、YL6810。融点45℃、エポキシ当量172。) 2.0質量部
フェノール樹脂1:フェニレン骨格含有フェノールアラルキル樹脂(三井化学(株)製、XLC-4L。軟化点65℃、水酸基当量165。) 2.6質量部
フェノール樹脂2:フェノールノボラック樹脂(住友ベークライト(株)製、PR-HF-3。軟化点80℃、水酸基当量105。) 2.6質量部
硬化促進剤(トリフェニルホスフィン) 0.2質量部
無機充填材(平均粒径16μmの溶融球状シリカ)84.0質量部
カルナバワックス 0.1質量部
カーボンブラック 0.3質量部
カップリング剤 0.2質量部
上記配合の樹脂組成物の原材料をスーパーミキサーにより5分間粉砕混合したのち、この混合原料を準備した。
図6に示す円筒状外周部302の素材として孔径2.5mmの小孔を有している鉄製の打ち抜き金網を使用した。直径20cmの回転子301の外周上に円筒状に加工した高さ25mm、厚さ1.5mmの打ち抜き金網を取り付け、円筒状外周部302を形成した。回転子301を3000RPMで回転させ、円筒状外周部302を励磁コイルで115℃に加熱した。回転子301の回転数と、円筒状外周部302の温度が定常状態になった後、脱気装置により脱気しつつ二軸押出機309により上記マスターバッチを溶融混練して得られた溶融物を、回転子301の上方より2重管式円筒体305を通して2kg/hrの割合で回転子301の内側に供給して、回転子301を回転させて得られる遠心力によって円筒状外周部302の複数の小孔を通過させることで、顆粒状の樹脂組成物を得た。製造条件の詳細は表1に記載した。
得られた顆粒状の樹脂脂組成物を下記の方法で評価し、その評価結果を表1に示した。
表1の条件に従い、実施例1-1と同様に顆粒状の樹脂組成物を得、同様に各試験を行った。得られた結果を表1に示した。
樹脂組成物の原材料をスーパーミキサーにより5分間粉砕混合したのち、二軸押出機309により混練温度100℃で溶融混練し、さらにクーリングベルトで冷却後、ハンマーミルにて粗粉砕を行って、平均粒径800μm、粒度分布40μm~10mmの粗粉砕物を得た。これをさらにパルペライザーにて4000回転で粉砕して、顆粒状の樹脂組成物を得、実施例1-1と同様の試験を行った。得られた結果を表2に示した。
比較例1-4で得られた顆粒状の樹脂組成物を、さらにロータップ型篩振動機に備え付けた目開き2.00mm、1.00mm及び106μmのJIS標準篩を用い、これらの篩を20分間に亘って振動(ハンマー打数:120回/分)させながら試料を篩に通して分級し、表2に示すような粒度分布になるように顆粒状の樹脂組成物の各分級成分を調合し、所定の粒度分布の樹脂組成物を得、実施例1-1と同様の試験を行った。得られた結果を表2に示した。
実施例2-1
<樹脂組成物の配合(質量部)>
エポキシ樹脂1:ビフェニレン骨格含有フェノールアラルキル型エポキシ樹脂(日本化薬(株)製、NC-3000。軟化点58℃、エポキシ当量277。) 8.0質量部
エポキシ樹脂2:ビスフェノールA型エポキシ樹脂(ジャバンエポキシレジン(株)製、YL6810。融点45℃、エポキシ当量172。) 2.0質量部
フェノール樹脂1:ビフェニレン骨格含有フェノールアラルキル樹脂(日本化薬(株)製、GPL-65。軟化点65℃、水酸基当量198。) 8.0質量部
硬化促進剤(トリフェニルホスフィン) 0.2質量部
無機充填材(平均粒径16μmの溶融球状シリカ)81.2質量部
カルナバワックス 0.1質量部
カーボンブラック 0.3質量部
カップリング剤 0.2質量部
上記配合の樹脂組成物の原材料をスーパーミキサーにより5分間粉砕混合したのち、この混合原料を準備した。
図6に示す円筒状外周部302の素材として孔径2.5mmの小孔を有している鉄製の打ち抜き金網を使用した。直径20cmの回転子301の外周上に円筒状に加工した高さ25mm、厚さ1.5mmの打ち抜き金網を取り付け、円筒状外周部302を形成した。回転子301を3000RPMで回転させ、円筒状外周部302を励磁コイルで115℃に加熱した。回転子301の回転数と、円筒状外周部302の温度が定常状態になった後、脱気装置により脱気しつつ二軸押出機309により上記マスターバッチを溶融混練して得られた溶融物を、回転子301の上方より2重管式円筒体305を通して2kg/hrの割合で回転子301の内側に供給して、回転子301を回転させて得られる遠心力によって円筒状外周部302の複数の小孔を通過させることで、顆粒状の樹脂組成物を得た。製造条件の詳細は表3に記載した。
顆粒密度(D1):得られた顆粒状の樹脂組成物をロータップ型篩振動機(丸菱科学機械製作所製、型式-SS-100A)に備え付けた目開き106μmのJIS標準篩を用い、篩を20分間に亘って振動(ハンマー打数:120回/分)させながら試料を篩に通して分級し、106μm未満の微粉を除去した。次いで、前述のピクノメータ法により、顆粒密度を求めた。
硬化物比重(D2):得られた顆粒状の樹脂組成物を一旦所定の寸法のタブレットに打錠し、トランスファー成形機を用い、金型温度175±5℃、注入圧力7MPa、硬化時間120秒で、直径50mm×厚さ3mmの円盤を成形し、質量、体積を求め硬化物比重を計算した。
実施例2-1において、無機充填材の量及び顆粒状の樹脂組成物の製造条件を表3のとおりとした以外は、実施例2-1と同様にして顆粒状の樹脂組成物を作製した。尚、比較例2-1においては、二軸押出機による溶融混練時に脱気しないで混練を行った。実施例2-1と同様の試験を行い、得られた結果を表3に示した。
実施例2-1の組成の原材料をスーパーミキサーにより5分間粉砕混合したのち、脱気装置により脱気しつつ二軸押出機309により混練温度100℃で溶融混練し、さらにクーリングベルトで冷却後、ハンマーミルにて粗粉砕を行って、平均粒径800μm、粒度分布40μm~10mmの粗粉砕物を得た。得られた粗粉砕物をさらにパルペライザーにて4000回転で粉砕して、顆粒状の樹脂組成物を得た。実施例2-1と同様の試験を行い、得られた結果を表4に示した。
比較例2-2で得られた顆粒状の樹脂組成物をさらにロータップ型篩振動機(丸菱科学機械製作所製、型式-SS-100A)に備え付けた目開き106μm、2mmのJIS標準篩を用い、篩を20分間に亘って振動(ハンマー打数:120回/分)させながら試料を篩に通して分級し、106μm未満、106μm以上2mm未満、2mm以上の成分に分級し、表4の分布になるように各成分を調整し顆粒状の樹脂組成物を作製した。実施例2-1と同様の試験を行い、得られた結果を表4に示した。
実施例2-1の組成において、無機充填材の量を表4に記載のとおりとした原材料を、スーパーミキサーにより5分間粉砕混合したのち、脱気装置により脱気しつつ二軸押出機309により混練温度100℃で溶融混練し、さらにクーリングベルトで冷却後、ハンマーミルにて粗粉砕を行って、平均粒径800μm、粒度分布40μm~10mmの粗粉砕物を得た。得られた粗粉砕物をさらにパルペライザーにて4000回転で粉砕したのち、ロータップ型篩振動機(丸菱科学機械製作所製、型式-SS-100A)に備え付けた目開き106μm、2mmのJIS標準篩を用い、篩を20分間に亘って振動(ハンマー打数:120回/分)させながら試料を篩に通して分級し、106μm未満、106μm以上2mm未満、2mm以上の成分に分級し、表4の分布になるように各成分を調整し顆粒状の樹脂組成物を作製した。実施例2-1と同様の試験を行い、得られた結果を表4に示した。
この出願は、平成20年12月10日に出願された日本特許出願特願2008-314064および平成20年12月10日に出願された日本特許出願特願2008-314065を基礎とする優先権を主張し、その開示の全てをここに取り込む。
Claims (9)
- 圧縮成形により半導体素子を封止してなる半導体装置に用いる顆粒状の半導体封止用エポキシ樹脂組成物であって、
前記顆粒状の半導体封止用エポキシ樹脂組成物全体に対して、JIS標準篩を用いて篩分により測定した粒度分布における、2mm以上の粒子の割合が3質量%以下であり、1mm以上、2mm未満の粒子の割合が0.5質量%以上、60質量%以下であり、106μm未満の微粉の割合が5質量%以下であることを特徴とする顆粒状の半導体封止用エポキシ樹脂組成物。 - 前記顆粒状の半導体封止用エポキシ樹脂組成物が、前記JIS標準篩を用いて篩分により測定した粒度分布における106μm以上の粒子に対し、最長長さ(L)が5mm以下であり、かつ最短長さ(S)が1mm以下である粒子の割合が50質量%以上である、請求項1に記載の顆粒状の半導体封止用エポキシ樹脂組成物。
- 前記顆粒状の半導体封止用エポキシ樹脂組成物の崩壊角が35°以下である、請求項1または請求項2に記載の顆粒状の半導体封止用エポキシ樹脂組成物。
- 圧縮成形により半導体素子を封止してなる半導体装置に用いる顆粒状の半導体封止用エポキシ樹脂組成物であって、
前記顆粒状の半導体封止用エポキシ樹脂組成物全体に対して、JIS標準篩を用いて篩分により測定した粒度分布における、2mm以上の粗粒の割合が3質量%以下であり、106μm未満の微粉の割合が5質量%以下であり、
前記半導体封止用エポキシ樹脂組成物の顆粒密度D1と前記半導体封止用エポキシ樹脂組成物の硬化後の硬化物比重D2との比D1/D2が、0.88以上、0.97以下の範囲である、顆粒状の半導体封止用エポキシ樹脂組成物。 - 前記顆粒状の半導体封止用エポキシ樹脂組成物の前記顆粒密度D1が1.95以下である、請求項4に記載の顆粒状の半導体封止用エポキシ樹脂組成物。
- 前記顆粒状の半導体封止用エポキシ樹脂組成物が、複数の小孔を有する円筒状外周部と円盤状の底面とから構成される回転子の内側に、溶融された樹脂組成物を供給し、その組成物を、前記回転子を回転させて得られる遠心力によって前記小孔を通過させて得られたものである、請求項1から5のいずれか1項に記載の顆粒状の半導体封止用エポキシ樹脂組成物。
- 請求項1から6のいずれか1項に記載の顆粒状の半導体封止用エポキシ樹脂組成物を用いて、圧縮成形により半導体素子を封止することを特徴とする半導体装置の製造方法。
- 請求項1から6のいずれか1項に記載の顆粒状の半導体封止用エポキシ樹脂組成物を用いて、圧縮成形により半導体素子を封止してなることを特徴とする半導体装置。
- リードフレーム又は回路基板と、前記リードフレーム又は前記回路基板上に積層又は並列して搭載された1以上の半導体素子と、前記リードフレーム又は前記回路基板と前記半導体素子とを電気的に接続するボンディングワイヤと、前記半導体素子と前記ボンディングワイヤを封止する封止材とを備えた半導体装置であって、
前記半導体素子上の前記封止材の厚みが0.08mm以上、0.5mm以下であり、
前記封止材が、請求項1から6のいずれか1項に記載の顆粒状の半導体封止用エポキシ樹脂組成物の圧縮成形による硬化物により構成されている、半導体装置。
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MY152342A (en) | 2014-09-15 |
JP2010159400A (ja) | 2010-07-22 |
JP5343830B2 (ja) | 2013-11-13 |
TWI449748B (zh) | 2014-08-21 |
TW201033279A (en) | 2010-09-16 |
KR20110104507A (ko) | 2011-09-22 |
JP5672335B2 (ja) | 2015-02-18 |
JP2013166961A (ja) | 2013-08-29 |
SG172031A1 (en) | 2011-07-28 |
CN102246295A (zh) | 2011-11-16 |
US20110241188A1 (en) | 2011-10-06 |
CN102246295B (zh) | 2013-09-04 |
US8410619B2 (en) | 2013-04-02 |
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