WO2010061774A1 - アウトガス発生が低減されたレジスト下層膜形成組成物 - Google Patents
アウトガス発生が低減されたレジスト下層膜形成組成物 Download PDFInfo
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- WO2010061774A1 WO2010061774A1 PCT/JP2009/069615 JP2009069615W WO2010061774A1 WO 2010061774 A1 WO2010061774 A1 WO 2010061774A1 JP 2009069615 W JP2009069615 W JP 2009069615W WO 2010061774 A1 WO2010061774 A1 WO 2010061774A1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/093—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antistatic means, e.g. for charge depletion
Definitions
- the present invention relates to a composition for forming a resist underlayer film. Specifically, in a lithography process for manufacturing a semiconductor device, a high energy beam applied on a semiconductor substrate and used for antireflection, antistatic, development defect prevention, and suppression of outgassing when exposing a resist layer with a high energy beam. It relates to the resist underlayer film.
- the active rays used are i-line (wavelength 365 nm), KrF excimer laser (wavelength 248 nm), ArF excimer laser (wavelength 193 nm), EUV light (extreme ultraviolet light, wavelength). 13.5 nm), electron beams and X-rays tend to have shorter wavelengths and higher energies.
- the resist underlayer film used in the lower layer is adhesiveness to the resist, resist shape, barrier property to suppress passage of harmful substances between the lower layer (substrate or organic underlayer film) and the resist,
- the problem of decomposition product gas (outgas), which is expected to be generated when irradiated with high energy rays, is important along with characteristics of thin film formation (for example, 30 nm or less) and etching rate.
- Patent Documents 1, 2, and 3 disclose resist compositions that use an acid generator that suppresses outgas generation in an EUV resist in order to prevent such contamination. In Non-Patent Document 1, consideration is given to reducing the outgas of the resist underlayer film.
- the present invention is used in a lower layer of a high energy ray resist such as EUV, electron beam, X-ray, etc., and has an effect of improving various problems at the time of exposure of high energy rays such as generation of reflection, charging, development defect and outgas,
- a high energy ray resist such as EUV, electron beam, X-ray, etc.
- it provides an underlayer film for a high energy beam resist excellent in suppressing outgas generation, and an underlayer film forming composition for forming the underlayer film, and a resist using the resist underlayer film forming composition It is to provide a method for forming a pattern.
- a high energy ray resist underlayer film forming composition comprising a film constituent having an aromatic ring structure or a heterocyclic structure
- the high energy ray resist underlayer film forming composition according to the first aspect wherein a film constituent having an aromatic ring structure or a heterocyclic structure is contained in the film at a ratio of 5 to 85% by mass
- the high energy ray resist underlayer film forming composition according to the first aspect or the second aspect wherein the film constituent component is a compound having an aromatic ring structure or a heterocyclic structure
- the compound is represented by the following formulas (1) to (4): [Wherein, n1, n3, and n5 each represents an integer of 0 to 2, n2, n4, and n6 are each an integer of 0 or more, up to the maximum integer that can be substituted with a hydrogen atom of the ring.
- R 1 represents an alkyl group, a halogen group, a nitro group, a cyano group, or an amino group
- R 2 represents a hydrogen atom or a methyl group
- R 3 and R 4 represent a hydroxy group, an alkyl group, a halogen group, a nitro group, respectively. Represents a group, a cyano group, or an amino group.
- Q 1 represents a direct bond, an oxygen atom, an oxycarbonyl group, an alkylene group or a hydroxy-substituted alkylene group
- Q 2 each independently represents a direct bond, an oxygen atom or an oxycarbonyl group
- Q 3 each independently represents a direct bond
- T 1 and T 2 each represent a direct bond or a divalent linking group.
- X 1 is the following formula (5) to formula (7): (Wherein R 5 to R 8 each represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 2 to 6 carbon atoms, a benzyl group or a phenyl group, and the phenyl group is A group selected from the group consisting of an alkyl group having 1 to 6 carbon atoms, a halogen atom, an alkoxy group having 1 to 6 carbon atoms, a nitro group, a cyano group, a hydroxy group, and an alkylthio group having 1 to 6 carbon atoms; R 5 and R 6 may be bonded to each other to form a ring having 3 to 6 carbon atoms, and R 7 and R 8 may be bonded to each other to form 3 to 3 carbon atoms.
- R 9 represents Q 3 , an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 2 to 6 carbon atoms, a benzyl group or a phenyl group, and the phenyl group Is a carbon atom Substituted with a group selected from the group consisting of an alkyl group having 1 to 6 carbon atoms, a halogen atom, an alkoxy group having 1 to 6 carbon atoms, a nitro group, a cyano group, a hydroxy group, and an alkylthio group having 1 to 6 carbon atoms.
- the polymer or polymer precursor containing the repeating unit of formula (1) has a dimer content of the repeating unit of formula (1) contained in the polymer or polymer precursor of 10% by mass or less.
- the polymer or polymer precursor containing the repeating units of the formulas (2) to (4) has at least one ester bond and an aromatic ring structure or a heterocyclic structure in the polymer or polymer precursor.
- the high energy ray resist underlayer film forming composition according to claim 4 As a seventh aspect, the film constituent having the aromatic ring structure or the heterocyclic structure is a crosslinkable compound, The high energy ray resist underlayer film forming composition according to any one of claims 1 to 6, As an eighth aspect, the aromatic ring is a benzene ring or a condensed benzene ring, The high energy ray resist underlayer film forming composition according to any one of claims 1 to 7, As a ninth aspect, the high energy beam resist underlayer film forming composition according to any one of claims 1 to 7, wherein the hetero ring is a triazine trione ring.
- or 10 on a semiconductor substrate As a twelfth aspect, a step of applying the high energy ray resist underlayer film forming composition according to any one of claims 1 to 10 onto a semiconductor substrate and baking to form a high energy ray resist underlayer film, A step of forming a high energy beam resist layer on the high energy beam resist underlayer film, a step of exposing the resist formed on the high energy beam resist underlayer film with a high energy beam, and a step of developing the resist after exposure.
- the high energy ray is EUV light.
- the underlayer film for high energy ray resist of the present invention, the underlayer film forming composition for forming the underlayer film, and the resist pattern forming method using them are used for high energy rays such as EUV, electron beam, and X-ray. It has the effect of improving various problems such as reflection, charging, development defects, and outgas generation that occur during exposure, and is particularly effective in suppressing outgas generation.
- the outgas generation amount is 1.00 ⁇ 10 14. It becomes possible to suppress to the following (Number of Molecule / cm 2 / s).
- the high energy ray resist underlayer film forming composition of the present invention contains an aromatic ring structure or a heterocyclic structure as a film component.
- An aromatic ring or a heterocyclic structure should just be contained in the film
- an aromatic ring structure, a heterocyclic structure, or a combination of an aromatic ring structure and a heterocyclic structure is fixed in the film as a film component.
- production that it has a fixed content rate in solid content of a film
- the aromatic ring structure and the heterocyclic structure are calculated as benzene, naphthalene, anthracene, and cyanuric acid, respectively, if they have a benzene ring, naphthalene ring, anthracene ring, or triazinetrione ring, for example.
- the high energy ray resist underlayer film forming composition of the present invention contains a compound having an aromatic ring structure or a heterocyclic structure and a solvent.
- a crosslinkable compound, a crosslinking catalyst, an acid generator, a surfactant, and the like can be contained.
- the solid content in the composition for forming a high energy ray resist underlayer film of the present invention is, for example, 0.5 to 50% by mass, or 1 to 30% by mass, or 1 to 25% by mass.
- the solid content is obtained by removing the solvent component from all the components of the composition for forming a high energy ray resist underlayer film.
- the proportion of the compound having an aromatic ring structure or heterocyclic structure in the solid content is 50% by mass or more, for example, 50 to 100% by mass, 50 to 99% by mass, 50 to 95% by mass, or 60 to 90% by mass. %.
- the compound When contained as a compound having an aromatic ring structure or a heterocyclic structure, the compound is a polymer, a polymer precursor compound, a crosslinkable compound for crosslinking the polymer, or a combination thereof.
- the polymer precursor compound and the crosslinkable compound for crosslinking the polymer become polymer constituents in the film.
- the polymer, the polymer precursor compound, and the crosslinking agent for crosslinking the polymer preferably have at least one crosslinking group in the polymer or polymer precursor.
- the cross-linking group is a hydroxy group, an epoxy group, a vinyl group or the like.
- or Formula (4) is mentioned.
- each of n1, n3, and n5 represents an integer of 0 to 2
- n2, n4, and n6 are each an integer of 0 or more and represent the maximum integer that can be substituted with a hydrogen atom of the ring.
- R 1 represents an alkyl group, a halogen group, a nitro group, a cyano group, or an amino group
- R 2 represents a hydrogen atom or a methyl group
- R 3 and R 4 represent a hydroxy group, an alkyl group, a halogen group, a nitro group, respectively. Represents a group, a cyano group, or an amino group.
- Q 1 each independently represents a direct bond, an oxygen atom, an oxycarbonyl group, an alkylene group or a hydroxy-substituted alkylene group
- Q 2 each independently represents a direct bond, an oxygen atom or an oxycarbonyl group
- Q 3 each independently A direct bond, an oxygen atom, an oxycarbonyl group, an alkylene group or a hydroxy group-substituted alkylene group is represented
- T 1 and T 2 each represent a direct bond or a divalent linking group.
- X 1 represents a structure selected from the following formulas (5) to (7).
- R 5 to R 8 each represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 2 to 6 carbon atoms, a benzyl group or a phenyl group, and the phenyl group has 1 carbon atom Substituted with a group selected from the group consisting of an alkyl group having 1 to 6 carbon atoms, a halogen atom, an alkoxy group having 1 to 6 carbon atoms, a nitro group, a cyano group, a hydroxy group, and an alkylthio group having 1 to 6 carbon atoms.
- R 5 and R 6 may be bonded to each other to form a ring having 3 to 6 carbon atoms
- R 7 and R 8 may be bonded to each other to form a ring having 3 to 6 carbon atoms.
- R 9 represents Q 3 , an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 3 to 6 carbon atoms, a benzyl group or a phenyl group, and the phenyl group is a carbon atom Number 1 to 6 Alkyl group, a halogen atom, an alkoxy group having 1 to 6 carbon atoms, nitro group, cyano group, hydroxy group, and may be substituted with a group selected from the group consisting of an alkylthio group having 1 to 6 carbon atoms.
- n2 represents an integer of 0 to 3 when n1 represents 0, represents an integer of 0 to 5 when n1 represents 1, and represents an integer of 0 to 7 when n1 represents 2.
- n4 represents an integer of 0 to 5 when n3 represents 0, represents an integer of 0 to 7 when n3 represents 1, and represents an integer of 0 to 9 when n3 represents 2.
- n6 represents an integer of 0 to 4 when n5 represents 0, represents an integer of 0 to 6 when n5 represents 1, and represents an integer of 0 to 8 when n5 represents 2.
- the above alkyl group is an alkyl group having 1 to 6 carbon atoms, for example, methyl group, ethyl group, n-propyl group, i-propyl group, cyclopropyl group, n-butyl group, i-butyl group, s-butyl.
- the above halogen group includes fluorine, chlorine, bromine and iodine.
- the alkylene group is an alkylene group having 1 to 6 carbon atoms and is a divalent organic group corresponding to the alkyl group.
- the alkenyl group is an alkenyl group having 2 to 6 carbon atoms such as ethenyl group, 1-propenyl group, 2-propenyl group, 1-methyl-1-ethenyl group, 1-butenyl group, 2-butenyl group, 3 -Butenyl group, 2-methyl-1-propenyl group, 2-methyl-2-propenyl group, 1-ethylethenyl group, 1-methyl-1-propenyl group, 1-methyl-2-propenyl group, 1-pentenyl group, 2-pentenyl group, 3-pentenyl group, 4-pentenyl group, 1-n-propylethenyl group, 1-methyl-1-butenyl group, 1-methyl-2-butenyl group, 1-methyl-3-butenyl group 2-ethyl-2-propenyl group, 2-methyl-1-butenyl group, 2-methyl-2-butenyl group, 2-methyl-3-butenyl group, 3-methyl-1-butenyl group, 3-methyl 2-but
- the alkoxy group is an alkoxy group having 1 to 6 carbon atoms, such as a methoxy group, an ethoxy group, an n-propoxy group, an i-propoxy group, an n-butoxy group, an i-butoxy group, an s-butoxy group, a t-butoxy group.
- n-pentoxy group 1-methyl-n-butoxy group, 2-methyl-n-butoxy group, 3-methyl-n-butoxy group, 1,1-dimethyl-n-propoxy group, 1,2-dimethyl -N-propoxy group, 2,2-dimethyl-n-propoxy group, 1-ethyl-n-propoxy group, n-hexyloxy group, 1-methyl-n-pentyloxy group, 2-methyl-n-pentyloxy Group, 3-methyl-n-pentyloxy group, 4-methyl-n-pentyloxy group, 1,1-dimethyl-n-butoxy group, 1,2-dimethyl-n-butoxy group, 1,3-dimethyl -N-butoxy group, 2,2-dimethyl-n-butoxy group, 2,3-dimethyl-n-butoxy group, 3,3-dimethyl-n-butoxy group, 1-ethyl-n-butoxy group, 2- Ethyl-n-butoxy group, 1,1,2-trimethyl-n-propoxy group
- the polymer or polymer precursor containing the repeating unit of the formula (1) is a novolak polymer or a novolak polymer precursor, and examples thereof include novolak polymers such as phenol novolak, naphthol novolak, and anthrol novolak.
- the novolak polymer is obtained by a condensation reaction from a compound such as phenol, naphthol, anthrol and the aldehyde.
- aldehydes include saturated aliphatic aldehydes such as formaldehyde, paraformaldehyde, acetaldehyde, and propylaldehyde, unsaturated aliphatic aldehydes such as acrolein and methacroylene, heterocyclic aldehydes such as furfural, benzaldehyde, and 1-naphthalaldehyde.
- aromatic aldehydes such as 9-anthraldehyde.
- Formaldehyde or paraformaldehyde is preferable and can be used alone or in combination of two or more.
- the aldehyde can be used at a ratio of 1 to 1000 parts by weight, preferably 5 to 500 parts by weight, with respect to 100 parts by weight of the alcohol.
- the novolak polymer used in the present invention preferably has a low volatility and low molecular weight component.
- the low molecular weight component is small, not only the component that volatilizes is small, but also uniform curing can be expected, so that decomposition by high energy rays is suppressed.
- a novolak polymer having a dimer content contained in the novolak polymer of 10% by mass or less, preferably 5% by mass or less, and more preferably 1.5% by mass or less can be used.
- the degree of dispersion represented by weight average molecular weight Mw / number average molecular weight Mn is 3.00 or less, preferably 1.00 to 2.00.
- a resist underlayer film formed from a resist underlayer film forming composition containing a novolak polymer or a novolak polymer precursor as an aromatic ring structure has high rigidity, low viscosity, and crack resistance, Furthermore, the outgas can be reduced.
- a phenol novolac resin having a dimer content of more than 10% and a dispersity of 3.00 or more decomposition occurs during exposure to high energy rays, and outgas is generated.
- the outgas generation amount becomes extremely low.
- the polymer or polymer precursor compound having the repeating unit structure of the formula (1) is shown below.
- the polymer or polymer precursor containing the repeating unit of the formula (2) is a vinyl polymer or a vinyl polymer precursor.
- Q 1 is a direct bond
- a vinyl monomer such as styrene, hydroxystyrene, vinylnaphthalene, hydroxyvinylnaphthalene, vinylanthracene, or hydroxyvinylanthracene is polymerized by a method such as radical polymerization, cationic polymerization, or anionic polymerization. Obtained by.
- An aromatic group can also be incorporated into the vinyl monomer or polymer thereof by reaction.
- Q 1 is a combination of oxygen and oxygen atoms and the alkylene group is, for example, a hydroxy group-containing vinyl monomer or a polymer thereof, phenols, naphthols, or by reacting the hydroxy group-containing aromatic compounds such anthrol give It is done.
- Q 1 is an oxycarbonyl group, for example, a vinyl monomer or a polymer thereof and an aromatic compound are bonded via an ester bond.
- One of the vinyl monomer or polymer thereof and the aromatic compound is an alcohol, and the other is a carboxylic acid.
- Q 1 is a hydroxy-substituted alkylene
- it can be obtained, for example, by a reaction between an epoxy group-containing vinyl monomer or a polymer thereof and a hydroxy group- or carboxyl group-containing aromatic compound.
- it can be obtained by reacting glycidyl (meth) acrylate with naphthol or anthracene carboxylic acid.
- the polymer or polymer precursor having a repeating unit of the formula (2) preferably has at least one ester bond and an aromatic ring structure in the polymer or polymer precursor.
- the ester bond is present in the side chain and can be present in the side chain of all repeating units or a part of the repeating units.
- the monomer that forms the polymer or polymer precursor having the repeating unit of the formula (2) can form a copolymer with another vinyl polymerizable compound.
- the vinyl polymerizable compound include acrylic acid esters, acrylamides, methacrylic acid esters, methacrylamides, allyl compounds, vinyl ethers, vinyl esters, and crotonic acid esters.
- the acrylic acid esters include alkyl acrylates having 1 to 10 carbon atoms in the alkyl group.
- methacrylic acid esters examples include alkyl methacrylates having 1 to 10 carbon atoms in the alkyl group.
- Acrylamides include acrylamide, N-alkyl acrylamide, N-aryl acrylamide, N, N-dialkyl acrylamide, N, N-diaryl acrylamide, N-methyl-N-phenyl acrylamide, N-2-acetamidoethyl-N-.
- Examples include acetylacrylamide.
- Examples of methacrylamides include methacrylamide, N-alkylmethacrylamide, N-arylmethacrylamide, N, N-dialkylmethacrylamide, N, N-diarylmethacrylamide, N-methyl-N-phenylmethacrylamide and N- And ethyl-N-phenylmethacrylamide.
- vinyl ethers include alkyl vinyl ethers and vinyl aryl ethers.
- vinyl esters examples include vinyl butyrate, vinyl isobutyrate, and vinyl trimethyl acetate.
- crotonic acid esters include alkyl crotonates such as butyl crotonate, hexyl crotonate, and glycerin monocrotonate.
- dialkyl itaconates dialkyl esters or monoalkyl esters of maleic acid or fumaric acid, crotonic acid, itaconic acid, maleic anhydride, lactone, acrylonitrile, methacrylonitrile, maleilonitrile and the like can be mentioned.
- the polymer or polymer precursor compound having the repeating unit structure of the formula (2) is shown below.
- the polymer or polymer precursor having a repeating unit of the formula (3) preferably has at least one ester bond and an aromatic ring structure in the polymer or polymer precursor.
- the ester bond is present in the main chain or the side chain, and can be present in the side chain of all repeating units or a part of the repeating units.
- the polymer or polymer precursor compound having the repeating unit structure of the formula (3) is shown below.
- the polymer or polymer precursor containing the repeating unit of the formula (4) can form a polymer by reacting a hydrogen atom on a nitrogen atom with a diepoxy compound.
- a glycidyl group on a nitrogen atom can react with a dialcohol or dicarboxylic acid compound to form a polymer or polymer precursor.
- the polymer precursor forms a polymer in the film by means of cross-linking groups.
- the polymer or polymer precursor having a repeating unit of the formula (4) preferably has at least one ester bond and a heterocyclic structure in the polymer or polymer precursor.
- the ester bond is present in the main chain or the side chain, and can be present in the side chain of all repeating units or a part of the repeating units.
- the polymer or polymer precursor compound having the repeating unit structure of the formula (4) is shown below.
- the compound having a repeating unit selected from the above formulas (1) to (4) is used as a polymer having a weight average molecular weight of 5000 to 500,000, and as a polymer precursor or a crosslinkable compound having a weight average molecular weight of 500 to 5000. Can do.
- cross-linkable compounds having at least two cross-linking substituents are preferably used.
- cross-linkable compounds having at least two cross-linking substituents include melamine compounds and substituted urea compounds having a cross-linking substituent such as a methylol group or a methoxymethyl group.
- it is a compound such as methoxymethylated glycoluril or methoxymethylated melamine, for example, tetramethoxymethylglycoluril, tetrabutoxymethylglycoluril, or hexamethoxymethylmelamine.
- compounds such as tetramethoxymethylurea and tetrabutoxymethylurea are also included.
- these cross-linking agents are included, they are, for example, 1 to 50% by mass or 10 to 40% by mass in the solid content.
- the high energy beam resist underlayer film forming composition of the present invention can contain an acid compound.
- the acid compound include sulfonic acid compounds such as p-toluenesulfonic acid, trifluoromethanesulfonic acid, and pyridinium-p-toluenesulfonate, and carboxylic acids such as salicylic acid, sulfosalicylic acid, citric acid, benzoic acid, and hydroxybenzoic acid.
- sulfonic acid compounds such as p-toluenesulfonic acid, trifluoromethanesulfonic acid, and pyridinium-p-toluenesulfonate
- carboxylic acids such as salicylic acid, sulfosalicylic acid, citric acid, benzoic acid, and hydroxybenzoic acid.
- a compound can be mentioned.
- Examples of the acid compound include 2,4,4,6-tetrabromocyclohexadienone, benzoin tosylate, 2-nitrobenzyl tosylate, p-trifluoromethylbenzenesulfonic acid-2,4-dinitrobenzyl,
- Examples include acid generators that generate acid by heat or light, such as phenyl-bis (trichloromethyl) -s-triazine and N-hydroxysuccinimide trifluoromethanesulfonate.
- the acid compound examples include iodonium salt acid generators such as diphenyliodonium hexafluorophosphate, diphenyliodonium trifluoromethanesulfonate, and bis (4-tert-butylphenyl) iodonium trifluoromethanesulfonate, and triphenylsulfonium hexafluoroantimony And sulfonium salt acid generators such as triphenylsulfonium trifluoromethanesulfonate.
- a sulfonic acid compound, an iodonium salt acid generator, and a sulfonium salt acid generator are preferably used.
- An acid compound may use only 1 type and can also be used in combination of 2 or more type.
- the content of the acid compound is, for example, 0.1 to 10% by mass or 0.1 to 5% by mass in the solid content.
- rheology modifier examples include phthalic acid compounds such as dimethyl phthalate, diethyl phthalate, diisobutyl phthalate, dihexyl phthalate, butyl isodecyl phthalate, adipic acid such as dinormal butyl adipate, diisobutyl adipate, diisooctyl adipate, octyl decyl adipate Compounds, maleic acid compounds such as dinormal butyl maleate, diethyl maleate, dinonyl maleate, oleic acid compounds such as methyl oleate, butyl oleate, tetrahydrofurfuryl oleate, and stearic acid compounds such as normal butyl stearate, glyceryl stearate Can be mentioned.
- the amount used is, for example, 0.001 to 10% by mass in the solid content.
- surfactant examples include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, polyoxyethylene alkyl ethers such as polyoxyethylene oleyl ether, polyoxyethylene octyl phenol ether, polyoxyethylene, and the like.
- Polyoxyethylene alkyl allyl ethers such as nonylphenol ether, polyoxyethylene / polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, sorbitan trioleate, sorbitan trioleate Sorbitan fatty acid esters such as stearate, polyoxyethylene sorbitan monolaurate, polyoxyethylene Nonionic surfactants such as polyoxyethylene sorbitan fatty acid esters such as rubitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan tristearate, trade name EFTOP EF301 , EF303, EF352 (manufactured by Tochem Products Co., Ltd.), trade names MegaFuck F171, F173, R-08, R-30 (manufactured by Dainippon Ink & Chemicals, Inc.
- any solvent can be used as long as it can dissolve the solid content.
- solvents include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, propylene glycol, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate.
- High energy ray resist underlayer film forming composition of the present invention on a semiconductor substrate (for example, silicon / silicon dioxide coated substrate, silicon nitride substrate, glass substrate, ITO substrate, etc.) by an appropriate coating method such as a spinner or coater.
- a high energy ray resist underlayer film is formed by applying an object and then baking.
- Calcination conditions are determined by appropriately selecting from a range of a calcination temperature of 80 to 250 ° C. and a calcination time of 0.3 to 60 minutes.
- the firing temperature is 130 ° C. to 250 ° C.
- the firing time is 0.5 to 5 minutes.
- the film thickness of the high energy beam resist underlayer film to be formed is, for example, 0.01 to 3.0 ⁇ m, and preferably 0.01 to 1.0 ⁇ m, or 0.01 to 0.00 ⁇ m. 5 ⁇ m, or 0.01 to 0.03 ⁇ m.
- a layer of a high energy beam resist such as an EUV resist is formed on the high energy beam resist underlayer film. Formation of the layer of the high energy beam resist can be performed by a well-known method, that is, coating and baking of the high energy beam resist composition solution on the lower layer film.
- the EUV resist include a resist composition using PMMA (polymethyl methacrylate), polyhydroxystyrene, phenol resin, or the like.
- the semiconductor substrate coated with resist is exposed through a predetermined mask.
- EUV light (13.5 nm), electron beam, X-ray or the like can be used.
- post-exposure heating PEB: Post Exposure Bake
- the heating conditions after exposure are determined by appropriately selecting from the ranges of heating temperature 70 ° C. to 150 ° C. and heating time 0.3 to 10 minutes.
- Developers include aqueous solutions of alkali metal hydroxides such as potassium hydroxide and sodium hydroxide, aqueous solutions of quaternary ammonium hydroxides such as tetramethylammonium hydroxide, tetraethylammonium hydroxide and choline, ethanolamine, propylamine, An alkaline aqueous solution such as an aqueous amine solution such as ethylenediamine can be mentioned as an example. Further, a surfactant or the like can be added to these developers.
- the development conditions are determined by appropriately selecting a development temperature within a range of 5 to 50 ° C. and a development time of 10 to 300 seconds.
- Removal of the resist underlayer film includes tetrafluoromethane, perfluorocyclobutane (C 4 F 8 ), perfluoropropane (C 3 F 8 ), trifluoromethane, carbon monoxide, argon, oxygen, nitrogen, sulfur hexafluoride, difluoro It is performed using a gas such as methane, nitrogen trifluoride and chlorine trifluoride.
- a planarizing film or a gap fill material layer can be formed before the resist underlayer film of the present invention is formed on the semiconductor substrate.
- a planarizing film or a gap fill material layer can be formed.
- Example Synthesis Example 1 After dissolving 5.00 g of monoallyl diglycidyl isocyanuric acid (manufactured by Shikoku Chemicals Co., Ltd.), 3.32 g of 5-hydroxyisophthalic acid, and 0.21 g of benzyltriethylammonium chloride in 34.10 g of propylene glycol monomethyl ether, Reaction was performed at 130 ° C. for 4 hours to obtain a polymer solution.
- the obtained polymer compound corresponds to formula (4-2), and the weight average molecular weight was 17,000 in terms of standard polystyrene.
- the obtained polymer contained a total of 69% by mass of triazine trione ring and benzene ring in terms of cyanuric acid and benzene ring, respectively.
- Synthesis example 2 11.00 g of tris (2,3-epoxypropyl) isocyanuric acid (Nissan Chemical Industry Co., Ltd., trade name Tepic), 39.50 g of 3,5-diiodosalicylic acid and 0.63 g of benzyltriethylammonium chloride were mixed with propylene glycol monomethyl After dissolving in 204.50 g of ether, the mixture was reacted at 130 ° C. for 4 hours to obtain a polymer solution.
- the obtained polymer compound corresponds to formula (4-4), and the weight average molecular weight was 1,200 in terms of standard polystyrene.
- the triazine trione ring and the benzene ring respectively contained 27% by mass in terms of cyanuric acid and benzene ring.
- Synthesis example 3 16.00 g of 2-vinylnaphthalene, 2.00 g of glycidyl methacrylate, and 2.00 g of 1-butoxyethyl methacrylate were dissolved in 60.8 g of cyclohexanone, and the temperature was raised to 80 ° C. A solution in which 0.20 g of azobisisobutyronitrile was dissolved in 20 g of cyclohexanone was slowly added and reacted at 80 ° C. for 24 hours after the addition was completed to obtain a polymer solution.
- the obtained polymer compound corresponds to formula (2-1), and the weight average molecular weight in terms of standard polystyrene was 6,000.
- the obtained polymer contained 79% by mass of naphthalene ring in terms of naphthalene.
- Synthesis example 4 Hydroxypropyl methacrylate (39.00 g) was dissolved in 60.8 g and glycidyl methacrylate (21.00 g) in 211.00 g of propylene glycol monomethyl ether, and the temperature was raised to 80 ° C. A solution prepared by dissolving 0.60 g of azobisisobutyronitrile in 30 g of propylene glycol monomethyl ether was slowly added and reacted at 80 ° C. for 24 hours after the addition was completed to obtain a polymer solution. The obtained polymer compound had a weight average molecular weight of 50,000 in terms of standard polystyrene.
- Synthesis example 5 After dissolving 10.00 g of monoallyl diglycidyl isocyanuric acid (manufactured by Shikoku Kasei Kogyo Co., Ltd.), 4.30 g of succinic acid, and 0.68 g of ethyltriphenylphosphonium bromide in 59.90 g of propylene glycol monomethyl ether, Reaction was performed at 130 ° C. for 4 hours to obtain a polymer solution.
- the obtained polymer compound corresponds to the formula (4-1), and the weight average molecular weight was 4,300 in terms of standard polystyrene.
- the obtained polymer contained 61% by mass of a triazine trione ring in terms of cyanuric acid.
- Synthesis example 7 20.00 g of hydroxypropyl methacrylate was dissolved in 60.8 g of propylene glycol monomethyl ether, and the temperature was raised to 80 ° C. A solution in which 0.20 g of azobisisobutyronitrile was dissolved in 20 g of propylene glycol monomethyl ether was slowly added and reacted at 80 ° C. for 24 hours after the addition was completed to obtain a polymer solution.
- the obtained polymer compound was polyhydroxypropyl methacrylate, and the weight average molecular weight was 50,000 in terms of standard polystyrene.
- the resulting polymer has no aromatic ring structure or heterocyclic structure.
- Example 1 To 10 g of the solution containing 2 g of the polymer compound obtained in Synthesis Example 1, 0.5 g of tetramethoxymethylglycoluril (manufactured by Nippon Cytec Industries, Ltd., trade name: Powder Link 1174) and 0.05 g of 5-sulfosalicylic acid Were dissolved in 79.47 g of propylene glycol monomethyl ether and 37.49 g of propylene glycol monomethyl ether acetate to obtain a solution. Then, it filtered using the polyethylene micro filter with a hole diameter of 0.10 micrometer, and also filtered using the polyethylene micro filter with a hole diameter of 0.05 micrometer, and prepared the resist underlayer film forming composition solution.
- tetramethoxymethylglycoluril manufactured by Nippon Cytec Industries, Ltd., trade name: Powder Link 1174
- 5-sulfosalicylic acid Were dissolved in 79.47 g of propylene glycol monomethyl ether
- Example 2 To 10 g of the solution containing 2 g of the polymer compound obtained in Synthesis Example 2, 0.5 g of tetramethoxymethylglycoluril (manufactured by Nippon Cytec Industries, Ltd., trade name: Powder Link 1174) and 0.05 g of 5-sulfosalicylic acid Were dissolved in 79.47 g of propylene glycol monomethyl ether and 37.49 g of propylene glycol monomethyl ether acetate to obtain a solution. Then, it filtered using the polyethylene micro filter with a hole diameter of 0.10 micrometer, and also filtered using the polyethylene micro filter with a hole diameter of 0.05 micrometer, and prepared the resist underlayer film forming composition solution.
- tetramethoxymethylglycoluril manufactured by Nippon Cytec Industries, Ltd., trade name: Powder Link 1174
- 5-sulfosalicylic acid Were dissolved in 79.47 g of propylene glycol monomethyl ether
- Example 3 In 10 g of the solution containing 2 g of the polymer compound obtained in Synthesis Example 3, 79.13 g of cyclohexanone, 16.35 g of propylene glycol monomethyl ether acetate, and 5.45 g of gamma butyrolactone were used as a solution. Then, it filtered using the polyethylene micro filter with a hole diameter of 0.10 micrometer, and also filtered using the polyethylene micro filter with a hole diameter of 0.05 micrometer, and prepared the resist underlayer film forming composition solution.
- Example 4 To 10 g of the solution containing 2 g of the polymer compound obtained in Synthesis Example 4, 0.5 g of tetramethoxymethylglycoluril (manufactured by Nippon Cytec Industries, Ltd., trade name: Powder Link 1174) and 0.05 g of 5-sulfosalicylic acid Were dissolved in 79.47 g of propylene glycol monomethyl ether and 37.49 g of propylene glycol monomethyl ether acetate to obtain a solution. Then, it filtered using the polyethylene micro filter with a hole diameter of 0.10 micrometer, and also filtered using the polyethylene micro filter with a hole diameter of 0.05 micrometer, and prepared the resist underlayer film forming composition solution.
- tetramethoxymethylglycoluril manufactured by Nippon Cytec Industries, Ltd., trade name: Powder Link 1174
- 5-sulfosalicylic acid Were dissolved in 79.47 g of propylene glycol monomethyl ether
- Example 5 To 10 g of the solution containing 2 g of the polymer compound obtained in Synthesis Example 5, 0.5 g of tetramethoxymethylglycoluril (manufactured by Nippon Cytec Industries, Ltd., trade name: Powder Link 1174) and 0.05 g of 5-sulfosalicylic acid Were dissolved in 79.47 g of propylene glycol monomethyl ether and 37.49 g of propylene glycol monomethyl ether acetate to obtain a solution. Then, it filtered using the polyethylene micro filter with a hole diameter of 0.10 micrometer, and also filtered using the polyethylene micro filter with a hole diameter of 0.05 micrometer, and prepared the resist underlayer film forming composition solution.
- tetramethoxymethylglycoluril manufactured by Nippon Cytec Industries, Ltd., trade name: Powder Link 1174
- 5-sulfosalicylic acid Were dissolved in 79.47 g of propylene glycol monomethyl ether
- Example 6 To 10 g of the solution containing 2 g of the polymer compound obtained in Synthesis Example 6, 0.5 g of tetramethoxymethylglycoluril (manufactured by Nippon Cytec Industries, Ltd., trade name: Powder Link 1174) and 0.05 g of 5-sulfosalicylic acid Were dissolved in 79.47 g of propylene glycol monomethyl ether and 37.49 g of propylene glycol monomethyl ether acetate to obtain a solution. Then, it filtered using the polyethylene micro filter with a hole diameter of 0.10 micrometer, and also filtered using the polyethylene micro filter with a hole diameter of 0.05 micrometer, and prepared the resist underlayer film forming composition solution.
- tetramethoxymethylglycoluril manufactured by Nippon Cytec Industries, Ltd., trade name: Powder Link 1174
- 5-sulfosalicylic acid Were dissolved in 79.47 g of propylene glycol monomethyl ether
- Each resist underlayer film forming composition prepared in Examples 1 to 6 of the present invention was applied (spin coated) onto a silicon wafer using a spinner.
- a resist underlayer film (film thickness of 0.10 ⁇ m) was formed by heating on a hot plate at 205 ° C. for 1 minute.
- These resist underlayer films were immersed in ethyl lactate and propylene glycol monomethyl ether, which are solvents for the resist solution, and confirmed to be insoluble in the solvent.
- Example 1 The resist underlayer film forming composition solutions prepared in Examples 1 to 7 and Comparative Example 1 were applied onto a silicon wafer using a spinner. Heating was performed at 205 ° C. for 1 minute on a hot plate to form a resist underlayer film (film thickness: 0.03 ⁇ m).
- the triazinetrione ring and the benzene ring are 54 mass% in total in terms of cyanuric acid and benzene ring in the obtained film, respectively, and in Example 2, the triazinetrione ring and the benzene ring are in the obtained film.
- outgas measurement was performed using a Resist Outgassig Exposure (ROX) system.
- the chamber internal pressure was in the range of 1.0 to 8.0 ⁇ 10 ⁇ 8
- EUV exposure was performed at an exposure amount of 6.0 mJ / cm 2
- the generated outgas amount was measured by Quadropole MS.
- the outgas was measured in the range of 35 to 200 excluding the molecular weight of 44.
- the results of the outgas generation amount are shown in Table 1.
- the unit is (Number of Molecule / cm 2 / s).
- a film having an aromatic ring structure or a heterocyclic structure in the film has a small amount of outgas generated due to decomposition products in EUV exposure.
- the higher the content of the aromatic ring structure or heterocyclic structure the higher the effect.
- the compound used (polymer or polymer precursor) forms a three-dimensional structure in the film during curing.
- the content of the aromatic ring structure or heterocyclic structure in the film and the effect of reducing the outgas generation amount are not necessarily proportional.
- the film must have 5 mass% or more of a portion derived from an aromatic ring structure or a heterocyclic structure, and considering the solubility in a solvent, it is 90 mass% or less. It is preferable.
- the resist underlayer film used in the present invention has a high adhesion to the resist, a high resist formability, a barrier property that suppresses the passage of harmful substances between the underlayer (substrate or organic underlayer film) and the resist, and a thin film property (for example, 30 nm).
- a thin film property for example, 30 nm.
- a lower layer of a high energy beam resist that is applied on a semiconductor substrate and used for antireflection, antistatic, development defect prevention, and suppression of outgassing when exposed to a high energy beam resist layer in a lithography process for manufacturing semiconductor devices. It can be used as a membrane.
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Abstract
Description
特許文献1、2及び3では、この様な汚染を防止するためにEUVレジストにアウトガス発生を抑制した酸発生剤を用いたレジスト組成物が開示されている。また、非特許文献1では、レジスト下層膜のアウトガス低減に関する考察がなされている。
第2観点として、芳香族環構造又はヘテロ環構造を有する膜構成成分を、5乃至85質量%の割合で膜中に含有する第1観点に記載の高エネルギー線レジスト下層膜形成組成物、
第3観点として、前記膜構成成分が芳香族環構造又はヘテロ環構造を有する化合物である第1観点又は第2観点に記載の高エネルギー線レジスト下層膜形成組成物、
第4観点として、前記化合物が、下記式(1)乃至式(4):
第5観点として、式(1)の繰り返し単位を含むポリマー又はポリマー前駆体は、該ポリマー又はポリマー前駆体中に含まれる式(1)の繰り返し単位の二量体含有量が10質量%以下であり、重量平均分子量Mw/数平均分子量Mnで示される分散度が3.00以下である請求項4に記載の高エネルギー線レジスト下層膜形成組成物、
第6観点として、式(2)乃至式(4)の繰り返し単位を含むポリマー又はポリマー前駆体は、該ポリマー中又はポリマー前駆体中に少なくとも1つのエステル結合と芳香族環構造又はヘテロ環構造を有するものである請求項4に記載の高エネルギー線レジスト下層膜形成組成物、
第7観点として、前記芳香族環構造又はヘテロ環構造を有する膜構成成分が架橋性化合物である請求項1乃至請求項6のいずれか1項に記載の高エネルギー線レジスト下層膜形成組成物、
第8観点として、前記芳香族環がベンゼン環又は縮合ベンゼン環である請求項1乃至請求項7のいずれか1項に記載の高エネルギー線レジスト下層膜形成組成物、
第9観点として、前記ヘテロ環がトリアジントリオン環である請求項1乃至請求項7のいずれか1項に記載の高エネルギー線レジスト下層膜形成組成物、
第10観点として、更に酸触媒を含有する請求項1乃至請求項9のいずれか1項に記載の高エネルギー線レジスト下層膜形成組成物、
第11観点として、請求項1乃至請求項10のいずれか1項に記載のEUVレジスト下層膜形成組成物を半導体基板上に塗布し焼成することによって得られる高エネルギー線レジスト下層膜、
第12観点として、請求項1乃至請求項10のいずれか1項に記載の高エネルギー線レジスト下層膜形成組成物を半導体基板上に塗布し焼成して高エネルギー線レジスト下層膜を形成する工程、その高エネルギー線レジスト下層膜上に高エネルギー線レジスト層を形成する工程、高エネルギー線レジスト下層膜上に層形成した該レジストを高エネルギー線で露光する工程、露光後に該レジストを現像する工程を含む半導体装置の製造方法、及び
第13観点として、前記高エネルギー線がEUV光である請求項1乃至請求項12のいずれか1項に記載の発明。
芳香族環又はヘテロ環構造は膜中に含有されていれば良く、その含有形態は問わない。しかし、低分子量の分子が揮発することを避けるため、芳香族環構造、ヘテロ環構造、又は芳香族環構造とヘテロ環構造の組み合わせが、膜構成成分として膜中に固定されていることが望ましく、例えばポリマーを構成する成分、又はポリマー同士を架橋させる時の架橋性化合物の成分として膜構成成分となり、硬化膜中に固定化されることが望ましい。また、膜の固形分中で一定の含有率を有していることがアウトガス発生を抑制する上で好ましい。
上記ポリマーとしては、式(1)乃至式(4)から選ばれる繰り返し単位を含むポリマーが挙げられる。
n2はn1が0を表す時に0乃至3の整数を表し、n1が1を表す時に0乃至5の整数を表し、n1が2を表す時に0乃至7の整数を表す。n4はn3が0を表す時に0乃至5の整数を表し、n3が1を表す時に0乃至7の整数を表し、n3が2を表す時に0乃至9の整数を表す。n6はn5が0を表す時に0乃至4の整数を表し、n5が1を表す時に0乃至6の整数を表し、n5が2を表す時に0乃至8の整数を表す。
メタクリルアミド類としては、例えばメタクリルアミド、N-アルキルメタクリルアミド、N-アリールメタクリルアミド、N,N-ジアルキルメタクリルアミド、N,N-ジアリールメタクリルアミド、N-メチル-N-フェニルメタクリルアミド及びN-エチル-N-フェニルメタクリルアミドなどが挙げられる。
ビニルエーテル類としては、例えばアルキルビニルエーテル、ビニルアリールエーテルが挙げられる。
EUVレジストとしては例えば、PMMA(ポリメチルメタクリレート)、ポリヒドロキシスチレン又はフェノール樹脂等を用いたレジスト組成物が例示される。
合成例1
モノアリルジグリシジルイソシアヌル酸(四国化成工業(株)製)5.00g、5-ヒドロキシイソフタル酸3.32g、及びベンジルトリエチルアンモニウムクロリド0.21gをプロピレングリコールモノメチルエーテル34.10gに溶解させた後、130℃で4時間反応させ高分子化合物の溶液を得た。得られた高分子化合物は式(4-2)に相当し、標準ポリスチレン換算にて重量平均分子量は17,000であった。得られたポリマー中には、トリアジントリオン環とベンゼン環が、それぞれシアヌル酸換算並びにベンゼン環換算で合計69質量%含有していた。
トリス(2,3-エポキシプロピル)イソシアヌル酸(日産化学工業(株)、商品名テピック)11.00g、3,5-ジヨードサリチル酸39.50g、及びベンジルトリエチルアンモニウムクロリド0.63gをプロピレングリコールモノメチルエーテル204.50gに溶解させた後、130℃で4時間反応させ高分子化合物の溶液を得た。得られた高分子化合物は式(4-4)に相当し、標準ポリスチレン換算にて重量平均分子量は1,200であった。得られたポリマー中には、トリアジントリオン環とベンゼン環が、それぞれシアヌル酸換算並びにベンゼン環換算で合計27質量%含有していた。
2-ビニルナフタレン16.00g、グリシジルメタクリレート2.00g、1-ブトキシエチルメタクリレート2.00gを60.8gのシクロヘキサノンに溶解させ80℃まで昇温した。アゾビスイソブチロニトリル0.20gを20gのシクロヘキサノンへ溶解させた溶液をゆっくり添加し、添加終了後24時間80℃で反応させ高分子化合物の溶液を得た。得られた高分子化合物は式(2-1)に相当し、標準ポリスチレン換算にて重量平均分子量は6,000であった。得られたポリマーにはナフタレン環がナフタレンに換算して79質量%含有していた。
ヒドロキシプロピルメタクリレート39.00gを60.8g、グリシジルメタクリレート21.00gを211.00gのプロピレングリコールモノメチルエーテルに溶解させ80℃まで昇温した。アゾビスイソブチロニトリル0.60gを30gのプロピレングリコールモノメチルエーテルへ溶解させた溶液をゆっくり添加し、添加終了後24時間80℃で反応させ高分子化合物の溶液を得た。得られた高分子化合物は、標準ポリスチレン換算にて重量平均分子量は50,000であった。
モノアリルジグリシジルイソシアヌル酸(四国化成工業(株)製)10.00g、コハク酸4.30g、及びエチルトリフェニルホスフォニウムブロマイド0.68gをプロピレングリコールモノメチルエーテル59.90gに溶解させた後、130℃で4時間反応させ高分子化合物の溶液を得た。得られた高分子化合物は式(4-1)に相当し、標準ポリスチレン換算にて重量平均分子量は4,300であった。得られたポリマーにはトリアジントリオン環がシアヌル酸に換算して61質量%含有していた。
トリス(2,3-エポキシプロピル)イソシアヌル酸((日産化学(株)製品名TEPIC)7.50g、サリチル酸9.54g、及びエチルトリフェニルホスフォニウムブロマイド0.70gをプロピレングリコールモノメチルエーテル70.95gに溶解させた後、130℃で4時間反応させ高分子化合物の溶液を得た。得られた高分子化合物は式(4-3)に相当し、標準ポリスチレン換算にて重量平均分子量は1,000であった。得られたポリマーには、トリアジントリオン環とベンゼン環が、それぞれシアヌル酸換算並びにベンゼン環換算で合計55質量%含有していた。
ヒドロキシプロピルメタクリレート20.00gを60.8gのプロピレングリコールモノメチルエーテルに溶解させ80℃まで昇温した。アゾビスイソブチロニトリル0.20gを20gのプロピレングリコールモノメチルエーテルへ溶解させた溶液をゆっくり添加し、添加終了後24時間80℃で反応させ高分子化合物の溶液を得た。得られた高分子化合物はポリヒドロキシプロピルメタクリレートであり、標準ポリスチレン換算にて重量平均分子量は50,000であった。得られたポリマーには芳香族環構造やヘテロ環構造は存在しない。
上記合成例1で得られた高分子化合物2gを有する溶液10gにテトラメトキシメチルグリコールウリル(日本サイテックインダストリーズ(株)製、商品名:パウダーリンク1174)0.5gと5-スルフォサリチル酸0.05gを混合し、プロピレングリコールモノメチルエーテル79.47g、及びプロピレングリコールモノメチルエーテルアセテート37.49gに溶解させ溶液とした。その後、孔径0.10μmのポリエチレン製ミクロフィルターを用いてろ過し、更に、孔径0.05μmのポリエチレン製ミクロフィルターを用いてろ過することにより、レジスト下層膜形成組成物溶液を調製した。
上記合成例2で得られた高分子化合物2gを有する溶液10gにテトラメトキシメチルグリコールウリル(日本サイテックインダストリーズ(株)製、商品名:パウダーリンク1174)0.5gと5-スルフォサリチル酸0.05gを混合し、プロピレングリコールモノメチルエーテル79.47g、及びプロピレングリコールモノメチルエーテルアセテート37.49gに溶解させ溶液とした。その後、孔径0.10μmのポリエチレン製ミクロフィルターを用いてろ過し、更に、孔径0.05μmのポリエチレン製ミクロフィルターを用いてろ過することにより、レジスト下層膜形成組成物溶液を調製した。
上記合成例3で得られた高分子化合物2gを有する溶液10gに、シクロヘキサノン79.13g、及びプロピレングリコールモノメチルエーテルアセテート16.35g、ガンマブチロラクトン5.45gに溶解させ溶液とした。その後、孔径0.10μmのポリエチレン製ミクロフィルターを用いてろ過し、更に、孔径0.05μmのポリエチレン製ミクロフィルターを用いてろ過することにより、レジスト下層膜形成組成物溶液を調製した。
上記合成例4で得られた高分子化合物2gを有する溶液10gにテトラメトキシメチルグリコールウリル(日本サイテックインダストリーズ(株)製、商品名:パウダーリンク1174)0.5gと5-スルフォサリチル酸0.05gを混合し、プロピレングリコールモノメチルエーテル79.47g、及びプロピレングリコールモノメチルエーテルアセテート37.49gに溶解させ溶液とした。その後、孔径0.10μmのポリエチレン製ミクロフィルターを用いてろ過し、更に、孔径0.05μmのポリエチレン製ミクロフィルターを用いてろ過することにより、レジスト下層膜形成組成物溶液を調製した。
上記合成例5で得られた高分子化合物2gを有する溶液10gにテトラメトキシメチルグリコールウリル(日本サイテックインダストリーズ(株)製、商品名:パウダーリンク1174)0.5gと5-スルフォサリチル酸0.05gを混合し、プロピレングリコールモノメチルエーテル79.47g、及びプロピレングリコールモノメチルエーテルアセテート37.49gに溶解させ溶液とした。その後、孔径0.10μmのポリエチレン製ミクロフィルターを用いてろ過し、更に、孔径0.05μmのポリエチレン製ミクロフィルターを用いてろ過することにより、レジスト下層膜形成組成物溶液を調製した。
上記合成例6で得られた高分子化合物2gを有する溶液10gにテトラメトキシメチルグリコールウリル(日本サイテックインダストリーズ(株)製、商品名:パウダーリンク1174)0.5gと5-スルフォサリチル酸0.05gを混合し、プロピレングリコールモノメチルエーテル79.47g、及びプロピレングリコールモノメチルエーテルアセテート37.49gに溶解させ溶液とした。その後、孔径0.10μmのポリエチレン製ミクロフィルターを用いてろ過し、更に、孔径0.05μmのポリエチレン製ミクロフィルターを用いてろ過することにより、レジスト下層膜形成組成物溶液を調製した。
フェノールノボラック樹脂(旭有機材(株)製、商品名PAPS-PN4、式(1-1)に相当する。数平均分子量688、重量平均分子量1035、分散度Mw/Mn=1.50、軟化点111℃、二量体含有量1.3質量%)2gを有する溶液10gにテトラメトキシメチルグリコールウリル(日本サイテックインダストリーズ(株)製、商品名:パウダーリンク1174)0.5gと5-スルフォサリチル酸0.05gを混合し、プロピレングリコールモノメチルエーテル79.47g、及びプロピレングリコールモノメチルエーテルアセテート37.49gに溶解させ溶液とした。その後、孔径0.10μmのポリエチレン製ミクロフィルターを用いてろ過し、更に、孔径0.05μmのポリエチレン製ミクロフィルターを用いてろ過することにより、レジスト下層膜形成組成物溶液を調製した。
上記合成例7で得られた高分子化合物2gを有する溶液10gにテトラメトキシメチルグリコールウリル(日本サイテックインダストリーズ(株)製、商品名:パウダーリンク1174)0.5gと5-スルフォサリチル酸0.05gを混合し、プロピレングリコールモノメチルエーテル79.47g、及びプロピレングリコールモノメチルエーテルアセテート37.49gに溶解させ溶液とした。その後、孔径0.10μmのポリエチレン製ミクロフィルターを用いてろ過し、更に、孔径0.05μmのポリエチレン製ミクロフィルターを用いてろ過することにより、レジスト下層膜形成組成物溶液を調製した。
本発明の実施例1乃至実施例6で調製された各レジスト下層膜形成用組成物を、スピナーを用いてシリコンウエハー上に塗布(スピンコート)した。ホットプレート上で205℃、1分間加熱し、レジスト下層膜(膜厚0.10μm)を形成した。これらのレジスト下層膜を、レジスト溶液の溶剤である乳酸エチル及びプロピレングリコールモノメチルエーテルに浸漬し、その溶剤に不溶であることを確認した。
実施例1乃至7、比較例1で調整したレジスト下層膜形成組成物溶液をスピナーを用い、シリコンウェハー上に塗布した。ホットプレート上で205℃で1分間加熱し、レジスト下層膜(膜厚0.03μm)を形成した。実施例1では得られた膜中でトリアジントリオン環とベンゼン環が、それぞれシアヌル酸換算並びにベンゼン環換算で合計54質量%、実施例2では得られた膜中でトリアジントリオン環とベンゼン環が、それぞれシアヌル酸換算並びにベンゼン環換算で合計21質量%、実施例3ではナフタレン環がナフタレンに換算して得られた膜中で79質量%、実施例4ではアントラセン環がアントラセンに換算して得られた膜中で8質量%、実施例5ではトリアジントリオン環がシアヌル酸に換算して得られた膜中で48質量%、実施例6ではトリアジントリオン環とベンゼン環が、それぞれシアヌル酸換算並びにベンゼン環換算で合計44質量%、実施例7ではベンゼン環がベンゼンに換算して得られた膜中で59質量%、比較例1では芳香族環構造もヘテロ環構造も得られた膜中に含まれていなかった。
アウトガス発生量の結果を表1に記載した。
単位は(Number of Molecule/cm2/s)である。
Claims (13)
- 芳香族環構造又はヘテロ環構造を有する膜構成成分を含む高エネルギー線レジスト下層膜形成組成物。
- 芳香族環構造又はヘテロ環構造を有する膜構成成分を、5乃至85質量%の割合で膜中に含有する請求項1に記載の高エネルギー線レジスト下層膜形成組成物。
- 前記膜構成成分が芳香族環構造又はヘテロ環構造を有する化合物である請求項1又は請求項2に記載の高エネルギー線レジスト下層膜形成組成物。
- 前記化合物が、下記式(1)乃至式(4):
- 式(1)の繰り返し単位を含むポリマー又はポリマー前駆体は、該ポリマー又はポリマー前駆体中に含まれる式(1)の繰り返し単位の二量体含有量が10質量%以下であり、重量平均分子量Mw/数平均分子量Mnで示される分散度が3.00以下である請求項4に記載の高エネルギー線レジスト下層膜形成組成物。
- 式(2)乃至式(4)の繰り返し単位を含むポリマー又はポリマー前駆体は、該ポリマー中又はポリマー前駆体中に少なくとも1つのエステル結合と芳香族環構造又はヘテロ環構造を有するものである請求項4に記載の高エネルギー線レジスト下層膜形成組成物。
- 前記芳香族環構造又はヘテロ環構造を有する膜構成成分が架橋性化合物である請求項1乃至請求項6のいずれか1項に記載の高エネルギー線レジスト下層膜形成組成物。
- 前記芳香族環がベンゼン環又は縮合ベンゼン環である請求項1乃至請求項7のいずれか1項に記載の高エネルギー線レジスト下層膜形成組成物。
- 前記ヘテロ環がトリアジントリオン環である請求項1乃至請求項7のいずれか1項に記載の高エネルギー線レジスト下層膜形成組成物。
- 更に酸触媒を含有する請求項1乃至請求項9のいずれか1項に記載の高エネルギー線レジスト下層膜形成組成物。
- 請求項1乃至請求項10のいずれか1項に記載のEUVレジスト下層膜形成組成物を半導体基板上に塗布し焼成することによって得られる高エネルギー線レジスト下層膜。
- 請求項1乃至請求項10のいずれか1項に記載の高エネルギー線レジスト下層膜形成組成物を半導体基板上に塗布し焼成して高エネルギー線レジスト下層膜を形成する工程、その高エネルギー線レジスト下層膜上に高エネルギー線レジスト層を形成する工程、高エネルギー線レジスト下層膜上に層形成した該レジストを高エネルギー線で露光する工程、露光後に該レジストを現像する工程を含む半導体装置の製造方法。
- 前記高エネルギー線がEUV光である請求項1乃至請求項12のいずれか1項に記載の発明。
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US8962234B2 (en) | 2011-03-15 | 2015-02-24 | Nissan Chemical Industries, Ltd. | Resist underlayer film forming composition and method for forming resist pattern using the same |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003345027A (ja) * | 2002-05-24 | 2003-12-03 | Nissan Chem Ind Ltd | リソグラフィー用反射防止膜形成組成物 |
WO2004034148A1 (ja) * | 2002-10-09 | 2004-04-22 | Nissan Chemical Industries, Ltd. | リソグラフィー用反射防止膜形成組成物 |
JP2005114921A (ja) * | 2003-10-06 | 2005-04-28 | Shin Etsu Chem Co Ltd | レジスト下層膜材料およびパターン形成方法 |
JP2005156816A (ja) * | 2003-11-25 | 2005-06-16 | Tokyo Ohka Kogyo Co Ltd | 下地材及び多層レジストパターン形成方法 |
JP2006508388A (ja) * | 2002-11-27 | 2006-03-09 | ドンジン セミケム カンパニー リミテッド | 有機乱反射防止膜組成物およびこれを利用したパターン形成方法 |
JP2006184471A (ja) * | 2004-12-27 | 2006-07-13 | Sanyo Electric Co Ltd | リソグラフィ用反射防止膜形成組成物及びレジストパターンの形成方法 |
WO2008053974A1 (fr) * | 2006-11-02 | 2008-05-08 | Mitsubishi Gas Chemical Company, Inc. | Composition sensible aux rayonnements |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6007963A (en) * | 1995-09-21 | 1999-12-28 | Sandia Corporation | Method for extreme ultraviolet lithography |
US6410209B1 (en) * | 1998-09-15 | 2002-06-25 | Shipley Company, L.L.C. | Methods utilizing antireflective coating compositions with exposure under 200 nm |
KR100872674B1 (ko) * | 2001-04-10 | 2008-12-10 | 닛산 가가쿠 고교 가부시키 가이샤 | 리소그래피용 반사방지막 형성 조성물 |
JP3597523B2 (ja) * | 2002-08-27 | 2004-12-08 | 東京応化工業株式会社 | リソグラフィー用下地材 |
KR100853004B1 (ko) * | 2004-04-09 | 2008-08-19 | 닛산 가가쿠 고교 가부시키 가이샤 | 축합계 폴리머를 갖는 반도체용 반사 방지막 |
JP2005321752A (ja) * | 2004-04-09 | 2005-11-17 | Nissan Chem Ind Ltd | イソシアヌル酸化合物と安息香酸化合物との反応生成物を含む反射防止膜形成組成物 |
CN102981368B (zh) * | 2004-05-14 | 2015-03-04 | 日产化学工业株式会社 | 含有乙烯基醚化合物的形成防反射膜的组合物 |
CN1977220B (zh) * | 2004-07-02 | 2010-12-01 | 日产化学工业株式会社 | 含有具有卤原子的萘环的形成光刻用下层膜的组合物 |
WO2006049045A1 (ja) * | 2004-11-01 | 2006-05-11 | Nissan Chemical Industries, Ltd. | スルホン酸エステルを含有するリソグラフィー用反射防止膜形成組成物 |
JP4575220B2 (ja) * | 2005-04-14 | 2010-11-04 | 信越化学工業株式会社 | レジスト下層膜材料およびパターン形成方法 |
JP4895049B2 (ja) * | 2005-06-10 | 2012-03-14 | 日産化学工業株式会社 | ナフタレン樹脂誘導体を含有するリソグラフィー用塗布型下層膜形成組成物 |
WO2007023710A1 (ja) * | 2005-08-25 | 2007-03-01 | Nissan Chemical Industries, Ltd. | ビニルナフタレン樹脂誘導体を含有するリソグラフィー用塗布型下層膜形成組成物 |
WO2007036982A1 (ja) * | 2005-09-27 | 2007-04-05 | Nissan Chemical Industries, Ltd. | イソシアヌル酸化合物と安息香酸化合物との反応生成物を含む反射防止膜形成組成物 |
JP4617252B2 (ja) | 2005-12-22 | 2011-01-19 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
CN100425630C (zh) * | 2006-04-19 | 2008-10-15 | 苏州市成技新材料开发有限公司 | 含硅偶联剂共聚物成膜树脂及其有机防反射涂膜 |
JP5041175B2 (ja) * | 2006-06-19 | 2012-10-03 | 日産化学工業株式会社 | 水酸基含有縮合系樹脂を含有するレジスト下層膜形成組成物 |
JP4845650B2 (ja) | 2006-09-08 | 2011-12-28 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
JP2008107817A (ja) | 2006-09-29 | 2008-05-08 | Fujifilm Corp | レジスト組成物およびこれを用いたパターン形成方法 |
JP2008273886A (ja) | 2007-04-27 | 2008-11-13 | Nippon Fine Chemical Kk | オキシムスルホネート系化合物 |
KR100908601B1 (ko) * | 2007-06-05 | 2009-07-21 | 제일모직주식회사 | 반사방지 하드마스크 조성물 및 이를 이용한 기판상 재료의패턴화 방법 |
WO2009008446A1 (ja) * | 2007-07-11 | 2009-01-15 | Nissan Chemical Industries, Ltd. | レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 |
CN101884015B (zh) * | 2007-12-13 | 2013-04-24 | 日产化学工业株式会社 | 形成抗蚀剂下层膜的组合物和抗蚀剂图案的形成方法 |
US8257910B1 (en) * | 2008-06-24 | 2012-09-04 | Brewer Science Inc. | Underlayers for EUV lithography |
-
2009
- 2009-11-19 JP JP2010540458A patent/JPWO2010061774A1/ja active Pending
- 2009-11-19 KR KR1020117013818A patent/KR101766796B1/ko active IP Right Grant
- 2009-11-19 WO PCT/JP2009/069615 patent/WO2010061774A1/ja active Application Filing
- 2009-11-19 US US13/131,474 patent/US10437150B2/en active Active
- 2009-11-27 TW TW98140608A patent/TWI468432B/zh active
-
2015
- 2015-02-05 JP JP2015021529A patent/JP6057099B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003345027A (ja) * | 2002-05-24 | 2003-12-03 | Nissan Chem Ind Ltd | リソグラフィー用反射防止膜形成組成物 |
WO2004034148A1 (ja) * | 2002-10-09 | 2004-04-22 | Nissan Chemical Industries, Ltd. | リソグラフィー用反射防止膜形成組成物 |
JP2006508388A (ja) * | 2002-11-27 | 2006-03-09 | ドンジン セミケム カンパニー リミテッド | 有機乱反射防止膜組成物およびこれを利用したパターン形成方法 |
JP2005114921A (ja) * | 2003-10-06 | 2005-04-28 | Shin Etsu Chem Co Ltd | レジスト下層膜材料およびパターン形成方法 |
JP2005156816A (ja) * | 2003-11-25 | 2005-06-16 | Tokyo Ohka Kogyo Co Ltd | 下地材及び多層レジストパターン形成方法 |
JP2006184471A (ja) * | 2004-12-27 | 2006-07-13 | Sanyo Electric Co Ltd | リソグラフィ用反射防止膜形成組成物及びレジストパターンの形成方法 |
WO2008053974A1 (fr) * | 2006-11-02 | 2008-05-08 | Mitsubishi Gas Chemical Company, Inc. | Composition sensible aux rayonnements |
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US8722840B2 (en) | 2010-11-17 | 2014-05-13 | Nissan Chemical Industries, Ltd. | Resist underlayer film forming composition, and method for forming resist pattern using the same |
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Also Published As
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KR20110095362A (ko) | 2011-08-24 |
US20110230058A1 (en) | 2011-09-22 |
US10437150B2 (en) | 2019-10-08 |
TW201031684A (en) | 2010-09-01 |
JP2015127821A (ja) | 2015-07-09 |
KR101766796B1 (ko) | 2017-08-09 |
JP6057099B2 (ja) | 2017-01-11 |
TWI468432B (zh) | 2015-01-11 |
JPWO2010061774A1 (ja) | 2012-04-26 |
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