WO2010056083A3 - 반도체 발광소자 - Google Patents

반도체 발광소자 Download PDF

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Publication number
WO2010056083A3
WO2010056083A3 PCT/KR2009/006731 KR2009006731W WO2010056083A3 WO 2010056083 A3 WO2010056083 A3 WO 2010056083A3 KR 2009006731 W KR2009006731 W KR 2009006731W WO 2010056083 A3 WO2010056083 A3 WO 2010056083A3
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WIPO (PCT)
Prior art keywords
conductive
light
semiconductor
emitting diode
layer
Prior art date
Application number
PCT/KR2009/006731
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English (en)
French (fr)
Other versions
WO2010056083A2 (ko
Inventor
최번재
이상범
이진복
김유승
송상엽
Original Assignee
삼성엘이디 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성엘이디 주식회사 filed Critical 삼성엘이디 주식회사
Priority to EP09826315.5A priority Critical patent/EP2357679B1/en
Priority to US13/127,847 priority patent/US8809893B2/en
Priority to CN200980145944.5A priority patent/CN102217102B/zh
Publication of WO2010056083A2 publication Critical patent/WO2010056083A2/ko
Publication of WO2010056083A3 publication Critical patent/WO2010056083A3/ko
Priority to US14/336,973 priority patent/US9305906B2/en
Priority to US14/338,225 priority patent/US9312249B2/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/40—Control techniques providing energy savings, e.g. smart controller or presence detection

Abstract

본 발명은 수직수평구조 반도체 발광소자에 관한 것으로서, 본 발명의 일 실시 형태는, 도전성 기판과, 상기 도전성 기판 상에 순차적으로 형성된 제1 도전형 반도체층, 활성층 및 제2 도전형 반도체층을 구비하는 발광구조물과, 상기 제1 도전형 반도체층 및 활성층을 관통하여 상기 제2 도전형 반도체층과 그 내부에서 접속된 도전성 비아 및 상기 도전성 비아로부터 연장되어 상기 발광구조물의 외부로 노출된 전기 연결부를 구비하는 제2 도전형 전극과, 상기 제2 도전형 전극을 상기 도전성 기판, 제1 도전형 반도체층 및 활성층과 전기적으로 분리시키기 위한 절연체 및 적어도 상기 발광구조물 중 상기 활성층의 측면을 덮도록 형성된 패시베이션층과, 상기 활성층에서 방출된 빛의 경로 상에 형성된 요철 구조를 구비하는 반도체 발광소자를 제공한다. 본 발명에 따르면, 외부 광 추출효율, 특히, 소자의 측 방향 광 추출효율이 향상될 수 있는 반도체 발광소자를 얻을 수 있다.
PCT/KR2009/006731 2008-11-14 2009-11-16 반도체 발광소자 WO2010056083A2 (ko)

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EP09826315.5A EP2357679B1 (en) 2008-11-14 2009-11-16 Vertical/horizontal light-emitting diode for semiconductor
US13/127,847 US8809893B2 (en) 2008-11-14 2009-11-16 Semiconductor light emitting device
CN200980145944.5A CN102217102B (zh) 2008-11-14 2009-11-16 半导体发光器件
US14/336,973 US9305906B2 (en) 2008-11-14 2014-07-21 Semiconductor light emitting device
US14/338,225 US9312249B2 (en) 2008-11-14 2014-07-22 Semiconductor light emitting device

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KR10-2008-0113568 2008-11-14
KR20080113568 2008-11-14
KR10-2008-0122094 2008-12-03
KR1020080122094 2008-12-03
KR1020090110307A KR101601621B1 (ko) 2008-11-14 2009-11-16 반도체 발광소자
KR10-2009-0110307 2009-11-16

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US14/336,973 Division US9305906B2 (en) 2008-11-14 2014-07-21 Semiconductor light emitting device
US14/338,225 Continuation US9312249B2 (en) 2008-11-14 2014-07-22 Semiconductor light emitting device

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