WO2009005221A1 - Self-aligned organic thin film transistor and fabrication method thereof - Google Patents

Self-aligned organic thin film transistor and fabrication method thereof Download PDF

Info

Publication number
WO2009005221A1
WO2009005221A1 PCT/KR2008/003019 KR2008003019W WO2009005221A1 WO 2009005221 A1 WO2009005221 A1 WO 2009005221A1 KR 2008003019 W KR2008003019 W KR 2008003019W WO 2009005221 A1 WO2009005221 A1 WO 2009005221A1
Authority
WO
WIPO (PCT)
Prior art keywords
forming
gate electrode
substrate
conductive layer
self
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2008/003019
Other languages
English (en)
French (fr)
Inventor
Kang Dae Kim
Taik Min Lee
Hyeon Cheol Choi
Dong Soo Kim
Byung Oh Choi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Korea Institute of Machinery and Materials KIMM
Original Assignee
Korea Institute of Machinery and Materials KIMM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Institute of Machinery and Materials KIMM filed Critical Korea Institute of Machinery and Materials KIMM
Priority to US12/278,120 priority Critical patent/US20100176379A1/en
Priority to JP2010514603A priority patent/JP2010532559A/ja
Priority to CN2008800006759A priority patent/CN101542744B/zh
Priority to EP08765981A priority patent/EP2165370A4/en
Publication of WO2009005221A1 publication Critical patent/WO2009005221A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition

Definitions

  • An organic TFT according to the present invention has a structure in which source/ drain electrodes are formed to be self-aligned with a gate electrode and thus do not overlap with each other. Accordingly, electrical characteristics of the organic TFT can be improved.
  • Fig. 5 is a sectional view showing the configuration of a self-aligned organic TFT according to an embodiment of the present invention.
  • a second conductive layer 24 to be used as source/drain electrodes 25 is formed through a screen printing process, wherein reference numeral 35 designates a screen printing mask and squeezer used herein. If the source/drain electrodes 25 are formed through the UV backside exposure and development processes, an organic semiconductor layer 26 is formed through a dispensing process, for example. Reference numeral 36 designates a dispenser used herein. Mode for the Invention
  • a gate dielectric layer is formed of a UV transmittable dielectric material
  • a second conductive layer for source/drain electrodes is formed of a UV curable conductive material. Therefore, UV backside exposure can be performed using the gate electrode as a mask, and the second conductive layer can be directly patterned instead of a typical patterning method in which a photoresist pattern should be used. Accordingly, the source/drain electrodes self-aligned with the gate electrode can be formed, and the forming process can be simplified. Furthermore, in the present invention, an organic TFT can be fabricated using a reel-to-reel process, and therefore, it is possible to simplify the entire fabrication processes.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
PCT/KR2008/003019 2007-07-02 2008-05-30 Self-aligned organic thin film transistor and fabrication method thereof Ceased WO2009005221A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/278,120 US20100176379A1 (en) 2007-07-02 2008-05-30 Self-aligned organic thin film transistor and fabrication method thereof
JP2010514603A JP2010532559A (ja) 2007-07-02 2008-05-30 自己整合型有機薄膜トランジスタ及びその製造方法
CN2008800006759A CN101542744B (zh) 2007-07-02 2008-05-30 自对准有机薄膜晶体管及其制造方法
EP08765981A EP2165370A4 (en) 2007-07-02 2008-05-30 SELF-ALIGNED ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THEREOF

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2007-0066207 2007-07-02
KR1020070066207A KR100832873B1 (ko) 2007-07-02 2007-07-02 자기정렬 유기박막 트랜지스터 및 그 제조 방법

Publications (1)

Publication Number Publication Date
WO2009005221A1 true WO2009005221A1 (en) 2009-01-08

Family

ID=39769635

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/003019 Ceased WO2009005221A1 (en) 2007-07-02 2008-05-30 Self-aligned organic thin film transistor and fabrication method thereof

Country Status (6)

Country Link
US (1) US20100176379A1 (enExample)
EP (1) EP2165370A4 (enExample)
JP (1) JP2010532559A (enExample)
KR (1) KR100832873B1 (enExample)
CN (1) CN101542744B (enExample)
WO (1) WO2009005221A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2466495A (en) * 2008-12-23 2010-06-30 Cambridge Display Tech Ltd Method of Fabricating a Self-Aligned Top-gate Organic Transistor
WO2012008203A1 (ja) * 2010-07-16 2012-01-19 セイコーインスツル株式会社 感光性塗布型電極材料を用いたｔｆｔの製造方法

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8119463B2 (en) 2008-12-05 2012-02-21 Electronics And Telecommunications Research Institute Method of manufacturing thin film transistor and thin film transistor substrate
KR101016441B1 (ko) 2008-12-08 2011-02-21 한국전자통신연구원 자기정렬에 의한 유기박막 트랜지스터 제조 방법
KR101638978B1 (ko) * 2009-07-24 2016-07-13 삼성전자주식회사 박막 트랜지스터 및 그 제조방법
KR101309263B1 (ko) * 2010-02-19 2013-09-17 한국전자통신연구원 유기 박막 트랜지스터 및 그 형성방법
KR101750290B1 (ko) 2010-06-09 2017-06-26 주성엔지니어링(주) 박막 트랜지스터의 제조 방법 및 박막 트랜지스터 어레이 기판의 제조 방법
CN101931052A (zh) * 2010-08-17 2010-12-29 中国科学院苏州纳米技术与纳米仿生研究所 有机单晶场效应晶体管的制备方法
KR101177873B1 (ko) * 2010-10-29 2012-08-28 서종현 박막트랜지스터 제조방법
CN102130009B (zh) * 2010-12-01 2012-12-05 北京大学深圳研究生院 一种晶体管的制造方法
CN102122620A (zh) * 2011-01-18 2011-07-13 北京大学深圳研究生院 一种自对准薄膜晶体管的制作方法
CN102646791B (zh) * 2011-05-13 2015-06-10 京东方科技集团股份有限公司 一种有机薄膜晶体管器件及其制作方法
CN102800705B (zh) * 2011-05-24 2015-01-07 北京大学 一种金属氧化物半导体薄膜晶体管的制作方法
KR101963229B1 (ko) * 2011-12-05 2019-03-29 삼성전자주식회사 접을 수 있는 박막 트랜지스터
GB2532895B (en) * 2012-02-21 2016-07-13 Pragmatic Printing Ltd Substantially planar electronic devices and circuits
US8766244B2 (en) * 2012-07-27 2014-07-01 Creator Technology B.V. Pixel control structure, array, backplane, display, and method of manufacturing
KR101426646B1 (ko) 2013-02-28 2014-08-06 충남대학교산학협력단 박막 트랜지스터의 제조방법
CN103325943A (zh) * 2013-05-16 2013-09-25 京东方科技集团股份有限公司 一种有机薄膜晶体管及其制备方法
JP6104775B2 (ja) * 2013-09-24 2017-03-29 株式会社東芝 薄膜トランジスタ及びその製造方法
US20190045620A1 (en) * 2014-07-09 2019-02-07 Schreiner Group Gmbh & Co. Kg Sensor device with a flexible electrical conductor structure
CN105355590B (zh) * 2015-10-12 2018-04-20 武汉华星光电技术有限公司 阵列基板及其制作方法
KR102660292B1 (ko) 2016-06-23 2024-04-24 삼성디스플레이 주식회사 박막 트랜지스터 패널 및 그 제조 방법
JP6358402B1 (ja) * 2016-09-16 2018-07-18 東レ株式会社 電界効果トランジスタの製造方法および無線通信装置の製造方法
CN106328542A (zh) * 2016-11-16 2017-01-11 电子科技大学 薄膜晶体管的制备方法
KR102652370B1 (ko) 2017-02-15 2024-03-27 삼성전자주식회사 박막 트랜지스터, 그 제조 방법, 및 박막 트랜지스터를 포함하는 전자 기기
KR101871333B1 (ko) * 2017-06-19 2018-06-26 주성엔지니어링(주) 박막 패턴의 제조 방법
CN112432977B (zh) * 2020-11-18 2022-04-12 中国科学院上海微系统与信息技术研究所 一种有机场效应晶体管气体传感器及其制备方法
CN112928211B (zh) * 2021-03-16 2022-03-18 华中科技大学 复杂曲面薄膜晶体管及自对准电流体共形光刻制造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5010027A (en) * 1990-03-21 1991-04-23 General Electric Company Method for fabricating a self-aligned thin-film transistor utilizing planarization and back-side photoresist exposure
US6335539B1 (en) * 1999-11-05 2002-01-01 International Business Machines Corporation Method for improving performance of organic semiconductors in bottom electrode structure
JP2005051199A (ja) * 2003-07-17 2005-02-24 Seiko Epson Corp 薄膜トランジスタ、薄膜トランジスタの製造方法、電子回路、表示装置および電子機器
US7125742B2 (en) * 2004-04-13 2006-10-24 Industrial Technology Research Institute Multi-passivation layer structure for organic thin-film transistors and method for fabricating the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990046897A (ko) * 1997-12-01 1999-07-05 김영환 박막 트랜지스터 및 그의 제조방법
GB0229191D0 (en) * 2002-12-14 2003-01-22 Plastic Logic Ltd Embossing of polymer devices
CN1702877A (zh) * 2003-07-17 2005-11-30 精工爱普生株式会社 薄膜晶体管及其制造方法、电路、显示装置和电子机器
JP2005079560A (ja) * 2003-09-04 2005-03-24 Hitachi Ltd 薄膜トランジスタ，表示装置、およびその製造方法
KR100576719B1 (ko) * 2003-12-24 2006-05-03 한국전자통신연구원 하부 게이트형 유기박막 트랜지스터의 제조방법
KR100615216B1 (ko) * 2004-04-29 2006-08-25 삼성에스디아이 주식회사 유기 억셉터막을 구비한 유기 박막 트랜지스터
JP2006269709A (ja) * 2005-03-24 2006-10-05 Hitachi Ltd 有機薄膜トランジスタを有する半導体装置の製造方法
JP2006302679A (ja) * 2005-04-21 2006-11-02 Seiko Epson Corp 導電膜の形成方法、及び電子機器の製造方法
JP2007129007A (ja) * 2005-11-02 2007-05-24 Hitachi Ltd 有機半導体膜を有する半導体装置の製造方法
KR101186740B1 (ko) * 2006-02-17 2012-09-28 삼성전자주식회사 뱅크형성 방법 및 이에 의해 형성된 뱅크를 함유하는 유기박막 트랜지스터

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5010027A (en) * 1990-03-21 1991-04-23 General Electric Company Method for fabricating a self-aligned thin-film transistor utilizing planarization and back-side photoresist exposure
US6335539B1 (en) * 1999-11-05 2002-01-01 International Business Machines Corporation Method for improving performance of organic semiconductors in bottom electrode structure
JP2005051199A (ja) * 2003-07-17 2005-02-24 Seiko Epson Corp 薄膜トランジスタ、薄膜トランジスタの製造方法、電子回路、表示装置および電子機器
US7125742B2 (en) * 2004-04-13 2006-10-24 Industrial Technology Research Institute Multi-passivation layer structure for organic thin-film transistors and method for fabricating the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2466495A (en) * 2008-12-23 2010-06-30 Cambridge Display Tech Ltd Method of Fabricating a Self-Aligned Top-gate Organic Transistor
GB2466495B (en) * 2008-12-23 2013-09-04 Cambridge Display Tech Ltd Method of fabricating a self-aligned top-gate organic transistor
US8546179B2 (en) 2008-12-23 2013-10-01 Cambridge Display Technology Ltd. Method of fabricating a self-aligned top-gate organic transistor
WO2012008203A1 (ja) * 2010-07-16 2012-01-19 セイコーインスツル株式会社 感光性塗布型電極材料を用いたｔｆｔの製造方法

Also Published As

Publication number Publication date
EP2165370A1 (en) 2010-03-24
CN101542744A (zh) 2009-09-23
CN101542744B (zh) 2012-07-04
US20100176379A1 (en) 2010-07-15
JP2010532559A (ja) 2010-10-07
EP2165370A4 (en) 2011-11-02
KR100832873B1 (ko) 2008-06-02

Similar Documents

Publication Publication Date Title
US20100176379A1 (en) Self-aligned organic thin film transistor and fabrication method thereof
EP2122706B1 (en) Method of forming organic thin film transistors
US7932186B2 (en) Methods for fabricating an electronic device
KR101319944B1 (ko) 유기 박막 트랜지스터 기판의 제조 방법
US7341897B2 (en) Method of fabricating thin film transistor
US9508806B2 (en) Electronic device, image display device and sensor, and method for manufacturing electronic device
JP2013016611A (ja) 半導体装置及びその製造方法、並びに、画像表示装置の製造方法
CN102738393A (zh) 薄膜器件及其制造方法和图像显示装置的制造方法
Balocco et al. Non-destructive patterning of conducting-polymer devices using subtractive photolithography
Liu et al. Patterning organic transistors by dry-etching: the double layer lithography
US9023683B2 (en) Organic semiconductor transistor with epoxy-based organic resin planarization layer
KR20090045884A (ko) 자기정렬 유기박막 트랜지스터 및 그 제조 방법
US8344366B2 (en) Organic thin film transistor and method of forming the same
US7935566B2 (en) Embossing printing for fabrication of organic field effect transistors and its integrated devices
JP4656262B2 (ja) 薄膜トランジスタの製造方法
JP5870502B2 (ja) 有機半導体素子およびその製造方法
US8202771B2 (en) Manufacturing method of organic semiconductor device
JP4501444B2 (ja) トランジスタにおける配線構造の形成方法及び電界効果型トランジスタの製造方法
US9484542B2 (en) Thin film transistor panel and method of manufacturing the same, and electronic device including the thin film transistor panel
JP5757142B2 (ja) 有機半導体素子の製造方法
WO2015004847A1 (en) Electronic device and manufacturing method therefor and image display apparatus and substrate for constituting image display apparatus
HK1134583B (en) Method of forming organic thin film transistors
KR20100065748A (ko) 유기 박막 트랜지스터의 제조방법
JP2010034126A (ja) 有機ｔｆｔの製造方法、及び有機ｔｆｔ

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880000675.9

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 1020087018094

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2010514603

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 12278120

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08765981

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2008765981

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE