WO2015004847A1

WO2015004847A1 - Electronic device and manufacturing method therefor and image display apparatus and substrate for constituting image display apparatus

Info

Publication number: WO2015004847A1
Application number: PCT/JP2014/003174
Authority: WO
Inventors: Akihiro Nomoto
Original assignee: Sony Corporation
Priority date: 2013-07-12
Filing date: 2014-06-13
Publication date: 2015-01-15
Also published as: JP2015019000A; TW201503340A

Abstract

Provided is an electronic device configured or structured to not only hardly cause characteristic degradation due to patterning of the organic semiconductor material layer, but also able to achieve improved characteristics. The electronic device includes a first electrode 26 and a second electrode 27, a patterned organic semiconductor material layer 23, as well as a conductive altered region 30 extending from the organic semiconductor material layer 23, which is obtained by patterning and altering the organic semiconductor material constituting the organic semiconductor material layer 23, and at least a portion of an arbitrary pathway connecting the first electrode 26 and the second electrode 27 is not provided with the altered region 30.

Description

ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREFOR AND IMAGE DISPLAY APPARATUS AND SUBSTRATE FOR CONSTITUTING IMAGE DISPLAY APPARATUS

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of Japanese Priority Patent Application JP 2013-146464 filed on July 12, 2013, the entire contents of which are incorporated herein by reference.

The present disclosure relates to an electronic device and a manufacturing method therefor, as well as an image display apparatus and a substrate for constituting an image display apparatus.

Currently, field-effect transistors (FET) including thin film transistors (Thin Film Transistor, TFT) which are used in many electronics include, for example, a gate electrode formed on a support, a gate insulating layer of SiO₂, which is formed on the support including on the gate electrode, and a channel forming region and source/drain electrodes formed on the gate insulating layer. Further, extremely expensive semiconductor manufacturing apparatuses are commonly used for the production of field-effect transistors which have such a structure, and the reduction in manufacturing cost has been strongly desired.

In such circumstances, recently, electronic devices using thin films of organic semiconductor materials have been energetically developed, and among the devices, organic electronic devices (hereinafter, which may be simply abbreviated as organic devices) such as organic transistors have been attracting attention. Ultimate objects of the organic devices can include low cost, light weight, flexibility, and high performance. Organic semiconductor materials have, as compared with silicon-based inorganic materials, various advantages such as that: (1) large-area organic devices can be manufactured at low cost by a simple process at low temperatures;(2) it is possible to manufacture flexible organic devices; and (3) the performance and properties of organic devices can be controlled by modifying molecules constituting organic materials into desired forms.

Further, film formation methods by application such as printing methods have been examined progressively as simple processes at low temperatures. Nevertheless, when a channel forming region including an organic semiconductor material layer is formed with a film formation method by application, or depending on the film formation method, problems can be caused such as leakage current increased unless the organic semiconductor material layer is subjected to patterning. Further, as patterning techniques for avoiding such problems, laser ablation techniques are known from, for example, JP 2011-249498 A.

JP 2011-249498 A

Summary

Now, studies by the inventors have found that when the organic semiconductor material layer is subjected to patterning in accordance with a laser ablation technique, leakage current is also increased in a finally obtained organic transistor. Further, the exploration of this phenomenon has found that the phenomenon is cause by a conductive region formed in the organic semiconductor material layer.

Therefore, it is desirable to provide an electronic device configured or structured to not only hardly cause characteristic degradation due to patterning of the organic semiconductor material layer, but also able to achieve improved characteristics, and a method for manufacturing the device, as well as an image display apparatus and a substrate for constituting an image display apparatus.

According to an embodiment of the present disclosure, there is provided an electronic device including a first electrode and a second electrode, a patterned organic semiconductor material layer, and a conductive altered region extending from the organic semiconductor material layer, which is obtained by patterning and altering the organic semiconductor material constituting the organic semiconductor material layer, where at least a portion of an arbitrary pathway connecting the first electrode and the second electrode is not provided with the altered region.

According to an embodiment of the present disclosure, there is provided a substrate for constituting an image display apparatus, which has a plurality of electronic devices according to an embodiment of the present disclosure arranged in a two-dimensional matrix form in a first direction and a second direction.

According to an embodiment of the present disclosure, there is provided an image display apparatus including the substrate for constituting an image display apparatus according to an embodiment of the present disclosure.

According to a first aspect of the present disclosure, there is provided a method for manufacturing an electronic device, which include the respective steps of: forming an organic semiconductor material layer including an organic semiconductor material on a base body; then patterning the organic semiconductor material layer; forming a first electrode and a second electrode on the organic semiconductor material layer; and then removing a portion of the organic semiconductor material layer along a second side and a fourth side of the organic semiconductor material layer, when sides of the patterned organic semiconductor material layer, which are parallel in a direction in which the first electrode and the second electrode extend, are regarded as a first side and a third side, whereas sides connecting the first side and third side are regarded as the second side and the fourth side.

According to a second aspect of the present disclosure, there is provided a method for manufacturing an electronic device, which include the respective steps of: forming at least a first electrode, a second electrode, and an organic semiconductor material layer including an organic semiconductor material on a base body; then patterning the organic semiconductor material layer; further forming an organic semiconductor material layer with a first side and a third side parallel in a direction in which the first electrode and the second electrode extend as well as a second side and a fourth side connecting the first side and third side; and then removing a portion of the organic semiconductor material layer along the second side and fourth side of the organic semiconductor material layer.

According to the present disclosure, due to the fact that at least a portion of an arbitrary pathway connecting the first electrode and the second electrode is not provided with the altered region, leakage current can be reduced without any current pathway produced by short circuit, and characteristic degradation of the electronic device is hardly caused. On the other hand, it becomes possible to achieve improved characteristics of the electronic device, such as, for example, an increase in on-state current and a reduction in contact resistance, because of including the conductive altered region of the altered organic semiconductor material. It is to be noted that the advantageous effects described in this specification consistently by way of example are not to be considered limited, but may have additional advantageous effects.

Figs. 1A, 1B, and 1C are respectively a schematic diagram illustrating the arrangement of an organic semiconductor material layer, etc. for an electronic device according to Example 1, a schematic partial cross-sectional view along the arrows B-B of Fig. 1A, and a schematic partial cross-sectional view along the arrows C-C of Fig. 1A. Figs. 2A and 2B are respectively a schematic diagram illustrating the arrangement of an organic semiconductor material layer, etc. for a modification example of the electronic device according to Example 1, and a schematic partial cross-sectional view along the arrows B-B of Fig. 2A, and Fig. 2C is a schematic partial cross-sectional view of an electronic device according to Example 2 as in the case of along the arrows B-B of Fig. 1A. Fig. 3A is a schematic partial cross-sectional view of a base body, etc. as in the case of along the arrows B-B of Fig. 1A, for explaining a method for manufacturing the electronic device according to Example 1, and Figs. 3B and 3C are respectively, following Fig. 3A, a schematic partial cross-sectional view of the base body, etc. as in the case of along the arrows B-B of Fig. 1A and a schematic diagram illustrating the arrangement of the organic semiconductor material layer, etc. for explaining a method for manufacturing the electronic device according to Example 1. Figs. 4A and 4B are, following Figs. 3B and 3C, a schematic partial cross-sectional view of the base body, etc. as in the case of along the arrows B-B of Fig. 1A, and a schematic diagram illustrating the arrangement of the organic semiconductor material layer, etc. for explaining a method for manufacturing the electronic device according to Example 1. Fig. 5A is, following Fig. 4B, a schematic diagram illustrating the arrangement of the organic semiconductor material layer, etc. for explaining a method for manufacturing the electronic device according to Example 1, and Fig. 5B is, following Fig. 4B, a schematic diagram illustrating the arrangement of the organic semiconductor material layer, etc. for explaining another method for manufacturing the electronic device according to Example 1. Figs. 6A, 6B, and 6C are respectively a schematic diagram illustrating the arrangement of an organic semiconductor material layer, etc. for an electronic device according to Example 3, a schematic partial cross-sectional view along the arrows B-B of Fig. 6A, and a schematic partial cross-sectional view along the arrows C-C of Fig. 6A. Figs. 7A and 7B are respectively schematic partial cross-sectional views of a modification example of the electronic device according to Example 3 as in the case of along the arrows B-B and C-C of Fig. 6A, and Fig. 7C is a schematic partial cross-sectional view of an electronic device according to Example 4 as in the case of along the arrows B-B of Fig. 6A. Figs. 8A and 8B are schematic partial cross-sectional views of a base body, etc. as in the case of along the arrows B-B of Fig. 6A, for explaining a method for manufacturing the electronic device according to Example 3. Figs. 9A and 9B are, following Fig. 8B, a schematic partial cross-sectional view of the base body, etc. as in the case of along the arrows B-B of Fig. 6A, and a schematic diagram illustrating the arrangement of the organic semiconductor material layer, etc. for explaining a method for manufacturing the electronic device according to Example 3. Fig. 10A is, following Fig. 9B, a schematic diagram illustrating the arrangement of the organic semiconductor material layer, etc. for explaining a method for manufacturing the electronic device according to Example 3, and Fig. 10B is, following Fig. 9B, a schematic diagram illustrating the arrangement of the organic semiconductor material layer, etc. for explaining another method for manufacturing the electronic device according to Example 3. Figs. 11A, 11B, and 11C are respectively a schematic diagram illustrating the arrangement of an organic semiconductor material layer, etc. for an electronic device according to Example 5, a schematic partial cross-sectional view along the arrows B-B of Fig. 11A, and a schematic partial cross-sectional view along the arrows C-C of Fig. 11A. Figs. 12A and 12B are respectively schematic partial cross-sectional views of a modification example of the electronic device according to Example 5 as in the case of along the arrows B-B and C-C of Fig. 11A, and Fig. 12C is a schematic partial cross-sectional view of an electronic device according to Example 6 as in the case of along the arrows B-B of Fig. 11A. Fig. 13A is a schematic partial cross-sectional view of a base body, etc. as in the case of along the arrows B-B of Fig. 11A, for explaining a method for manufacturing the electronic device according to Example 5, and Figs. 13B and 13C are respectively, following Fig. 13A, a schematic partial cross-sectional view of the base body, etc. as in the case of along the arrows B-B of Fig. 11A and a schematic diagram illustrating the arrangement of the organic semiconductor material layer, etc. for explaining a method for manufacturing the electronic device according to Example 5. Fig. 14A is, following Fig. 13C, a schematic diagram illustrating the arrangement of the organic semiconductor material layer, etc. for explaining a method for manufacturing the electronic device according to Example 5, and Fig. 14B is, following Fig. 13C, a schematic diagram illustrating the arrangement of the organic semiconductor material layer, etc. for explaining another method for manufacturing the electronic device according to Example 5. Figs. 15A, 15B, and 15C are respectively a schematic diagram illustrating the arrangement of an organic semiconductor material layer, etc. for an electronic device according to Example 7, a schematic partial cross-sectional view along the arrows B-B of Fig. 15A, and a schematic partial cross-sectional view along the arrows C-C of Fig. 15A. Figs. 16A and 16B are respectively schematic partial cross-sectional views of a modification example of the electronic device according to Example 7 as in the case of along the arrows B-B and C-C of Fig. 15A, and Fig. 16C is a schematic partial cross-sectional view of an electronic device according to Example 8 as in the case of along the arrows B-B of Fig. 15A. Fig. 17A is a schematic partial cross-sectional view of a base body, etc. as in the case of along the arrows B-B of Fig. 15A, for explaining a method for manufacturing the electronic device according to Example 7, and Figs. 17B and 17C are respectively, following Fig. 17A, a schematic partial cross-sectional view of the base body, etc. as in the case of along the arrows B-B of Fig. 15A and a schematic diagram illustrating the arrangement of the organic semiconductor material layer, etc. for explaining a method for manufacturing the electronic device according to Example 7. Fig. 18A is, following Fig. 17C, a schematic diagram illustrating the arrangement of the organic semiconductor material layer, etc. for explaining a method for manufacturing the electronic device according to Example 7, and Fig. 18B is, following Fig. 17C, a schematic diagram illustrating the arrangement of the organic semiconductor material layer, etc. for explaining another method for manufacturing the electronic device according to Example 7. Figs. 19A and 19B are schematic partial cross-sectional views of a two-terminal electronic device according to Example 9. Figs. 20A and 20B are respectively schematic diagrams illustrating the arrangement of an organic semiconductor material layer, etc. for a modification example of the electronic device according to Example 1. Fig. 21 is, following Fig. 20B, a schematic diagram illustrating the arrangement of the organic semiconductor material layer, etc. for the modification example of the electronic device according to Example 1. Fig. 22 is a graph showing the results of evaluating V-I characteristics of electronic devices according to Example 1, Comparative Example 1A, and Comparative Example 1B.

The following is a description of embodiments of the present disclosure, with reference to the accompanying drawings. However, the present disclosure is not limited to those embodiments, and various numerical values and materials in the embodiments are merely examples. Explanation will be made in the following order.
1. General description of an electronic device and a manufacturing method therefor, as well as an image display apparatus and a substrate for constituting an image display apparatus according to an embodiment of the present disclosure.
2. Example 1 (an electronic device and a manufacturing method therefor according to the present disclosure, a first bottom-gate/top-contact type electronic device, and an image display apparatus and a substrate for constituting an image display apparatus according to an embodiment of the present disclosure)
3. Example 2 (modification of Example 1, second bottom-gate/top-contact type electronic device)
4. Example 3 (another modification of Example 1, first bottom-gate/bottom-contact type electronic device)
5. Example 4 (modification of Example 3, second bottom-gate/top-contact type electronic device)
6. Example 5 (another modification of Example 1, first top-gate/bottom-contact type electronic device)
7. Example 6 (modification of Example 5, second top-gate/bottom-contact type electronic device)
8. Example 7 (another modification of Example 1, first top-gate/top-contact type electronic device)
9. Example 8 (modification of Example 7, second top-gate/top-contact type electronic device)
10. Example 9 (yet another modification example of Example 1, two-terminal electronic device), others

General Description of Electronic Device and Manufacturing Method Therefor, as well as Image Display Apparatus and substrate for constituting Image Display Apparatus according to Embodiment of Present Disclosure
The electronic device according to an embodiment of the present disclosure can have the form of the organic semiconductor material layer with a first side and a third side parallel in a direction in which the first electrode and the second electrode extend, as well as a second side and a fourth side connecting the first side and third side, and with a first region of an altered region in contact with the first side of the organic semiconductor material layer and a second region of an altered region in contact with the third side of the organic semiconductor material layer, without any altered region along the second side and fourth side of the organic semiconductor material layer.

The electronic device according to an embodiment of the present disclosure, which encompasses the preferred form, is a so-called two-terminal electronic device. However, the electronic device according to an embodiment of the present disclosure is not limited to this form, but can also have the form further including a control electrode. More specifically, the electronic device in this form is a so-called three-terminal electronic device.

In the following description, among electronic devices according to an embodiment of the present disclosure, electronic devices manufactured by the methods for manufacturing electronic devices according to the first aspects and second aspects of the present disclosure, electronic devices for constituting image display apparatuses according to an embodiment of the present disclosure, and electronic devices of substrates for constituting image display apparatuses according to an embodiment of the present disclosure, the three-terminal electronic devices may be collectively referred to as "three-terminal electronic devices and the like according to an embodiment of the present disclosure" in some cases.

Alternatively, the three-terminal electronic device and the like according to an embodiment of the present disclosure can be bottom-gate/top-contact type electronic devices, and specifically, have the form further including an insulating layer, which has the control electrode formed on a base body, has the insulating layer formed on the control electrode and the base body, has the organic semiconductor material layer formed on the insulating layer, and has first and second electrodes formed on the organic semiconductor material layer. It is to be noted that the three-terminal electronic device and the like according to an embodiment of the present disclosure in this form may be referred to as "first bottom-gate/top-contact electronic devices" for the sake of convenience in some cases. Furthermore, in this case, the devices can have the form with the first electrode in contact with the first region of the altered region and the second electrode in contact with the second region of the altered region.

Alternatively, the three-terminal electronic device and the like according to an embodiment of the present disclosure can be bottom-gate/bottom-contact type electronic devices, and specifically, have the form further including an insulating layer, which has the control electrode formed on a base body, has the insulating layer formed on the control electrode and the base body, has the organic semiconductor material layer, the first region of the altered region, and the second region of the altered region formed on the insulating layer, has a first electrode formed on the first region of the altered region, and has a second electrode formed on the second region of the altered region. It is to be noted that the three-terminal electronic device and the like according to an embodiment of the present disclosure in this form may be referred to as "second bottom-gate/top-contact electronic devices" for the sake of convenience in some cases. The adoption of this structure can provide shorter channels.

The three-terminal electronic device and the like according to an embodiment of the present disclosure can be bottom-gate/bottom-contact type electronic devices, and specifically, have the form further including an insulating layer, which has the control electrode formed on a base body, has the insulating layer formed on the control electrode and the base body, has first and second electrodes formed on the insulating layer, and has the organic semiconductor material layer formed from on the insulating layer to over the first and second electrodes between the first and second electrodes. It is to be noted that the three-terminal electronic device and the like according to an embodiment of the present disclosure in this form may be referred to as "first bottom-gate/bottom-contact electronic devices" for the sake of convenience in some cases. Furthermore, in this case, the devices can have the form with the first electrode in contact with the first region of the altered region and the second electrode in contact with the second region of the altered region.

Alternatively, the three-terminal electronic device and the like according to an embodiment of the present disclosure can be bottom-gate/bottom-contact type electronic devices, and specifically, have the form further including an insulating layer, which has the control electrode formed on a base body, has the insulating layer formed on the control electrode and the base body, has first and second electrodes formed on the insulating layer, has the organic semiconductor material layer formed on the insulating layer between the first and second electrodes, has the first region of the altered region formed from on the insulating layer to over the first electrode, and has the second region of the altered region formed from on the insulating layer to over the second electrode. It is to be noted that the three-terminal electronic device and the like according to an embodiment of the present disclosure in this form may be referred to as "second bottom-gate/bottom-contact electronic devices" for the sake of convenience in some cases. The adoption of this structure can provide shorter channels.

Alternatively, the three-terminal electronic device and the like according to an embodiment of the present disclosure can be top-gate/bottom-contact type electronic devices, and specifically, have the form further including an insulating layer, which has first and second electrodes formed on a base body, has the organic semiconductor material layer formed from on the base body to over the first and second electrodes between the first and second electrodes, has the insulating layer formed on the organic semiconductor material layer, and the control electrode formed on the insulating layer. It is to be noted that the three-terminal electronic device and the like according to an embodiment of the present disclosure in this form may be referred to as "first top-gate/bottom-contact electronic devices" for the sake of convenience in some cases. Furthermore, in this case, the devices can have the form with the first electrode in contact with the first region of the altered region and the second electrode in contact with the second region of the altered region.

Alternatively, the three-terminal electronic device and the like according to an embodiment of the present disclosure can be top-gate/bottom-contact type electronic devices, and specifically, have the form further including an insulating layer, which has first and second electrodes formed on a base body, has the organic semiconductor material layer formed on the base body between the first and second electrodes, has the first region of the altered region from on the base body to over the first electrode, has the second region of the altered region from on the base body to over the second electrode, has the insulating layer formed on the organic semiconductor material layer, the first region of the altered region, and the second region of the altered region, and has the control electrode formed on the insulating layer. It is to be noted that the three-terminal electronic device and the like according to an embodiment of the present disclosure in this form may be referred to as "second top-gate/bottom-contact electronic devices" for the sake of convenience in some cases. The adoption of this structure can provide shorter channels.

Alternatively, the three-terminal electronic device and the like according to an embodiment of the present disclosure can be top-gate/top-contact type electronic devices, and specifically, have the form further including an insulating layer, which has the organic semiconductor material layer formed on a base body, has the first and second electrodes formed on the organic semiconductor material layer, has the insulating layer formed on the first and second electrodes and the organic semiconductor material layer, and has the control electrode formed on the insulating layer. It is to be noted that the three-terminal electronic device and the like according to an embodiment of the present disclosure in this form may be referred to as "first top-gate/top-contact electronic devices" for the sake of convenience in some cases. Furthermore, in this case, the devices can have the form with the first electrode in contact with the first region of the altered region and the second electrode in contact with the second region of the altered region.

Alternatively, the three-terminal electronic device and the like according to an embodiment of the present disclosure can be top-gate/top-contact type electronic devices, and specifically, have the form further including an insulating layer, which has the organic semiconductor material layer, the first region of the altered region, and the second region of the altered region formed on a base body, has a first electrode formed on the first region of the altered region, has a second electrode formed on the second region of the altered region, has the insulating layer formed on the first and second electrodes, the organic semiconductor material layer, the first region of the altered region, and the second region of the altered region, and has the control electrode formed on the insulating layer. It is to be noted that the three-terminal electronic device and the like according to an embodiment of the present disclosure in this form may be referred to as "second top-gate/top-contact electronic devices" for the sake of convenience in some cases. The adoption of this structure can provide shorter channels.

The three-terminal electronic device and the like according to an embodiment of the present disclosure, which encompasses the various types of preferred forms described above, can include thin film transistors, which have the form further including an insulating layer, the control electrode for constituting a gate electrode, the insulating layer for constituting a gate insulating layer, the first electrode and second electrode for constituting source/drain electrodes, and the organic semiconductor material layer located between the first and second electrodes for constituting a channel forming region.

A substrate (backplane) constituting an image display apparatus according to an embodiment of the present disclosure, which include a plurality of electronic devices according to an embodiment of the present disclosure, can have the form in which control electrodes for a plurality of electronic devices arranged along a first direction are connected to gate wirings extending along the first direction, and first or second electrodes for a plurality of electronic devices arranged along a second direction are connected to signal wirings extending along the second direction.

Electronic devices according to an embodiment of the present disclosure, including the various types of preferred forms described above, electronic devices (including the various types of preferred forms described above) manufactured by the method for manufacturing an electronic device according to the first aspect or second aspect of the present disclosure, electronic devices (including the various types of preferred forms described above) for constituting image display apparatuses according to an embodiment of the present disclosure, and electronic devices (including the various types of preferred forms described above) of substrates for constituting image display apparatuses according to an embodiment of the present disclosure may be hereinafter collectively referred to simply as "electronic devices and the like according to an embodiment of the present disclosure" in some cases.

In the electronic device and the like according to an embodiment of the present disclosure, the difference between the altered region and the organic semiconductor material layer is that the altered region has higher conductivity than the organic semiconductor material layer. Alternatively, the difference between the altered region and the organic semiconductor material layer is that the crystal structure of the altered region is different from the crystal structure of the organic semiconductor material layer. The crystal structure of the altered region is much more amorphous than the crystal structure of the organic semiconductor material layer. The crystal structures can be examined by carrying out X-ray diffraction (XRD analysis). Alternatively, the difference between the altered region and the organic semiconductor material layer is that the surface roughness of the altered region is different from the surface roughness of the organic semiconductor material layer. The surface roughness of the altered region is larger than the surface roughness of the organic semiconductor material layer. Alternatively, the difference between the altered region and the organic semiconductor material layer is a difference in charged state, and the altered region is less likely to be charged than the organic semiconductor material layer. The charged states can be evaluated by, for example, scanning electron microscope observation.

When the organic semiconductor material layer is subjected to patterning by a laser ablation method, or subjected to patterning by a dry etching method or a wet etching method, or subjected to a plasma treatment, the altered region is formed in an outer edge region of the patterned organic semiconductor material layer, depending on treatment conditions. Further, this altered region may be partially removed by, for example, a physical removal method with the use of a needle or the like, a laser ablation method under optimized conditions, or a dry etching method or a wet etching method.

Examples of the laser light for irradiating the organic semiconductor material layer to obtain the patterned organic semiconductor material layer can include, for example, laser light of 248 nm in wavelength emitted from a KrF excimer laser, a fourth harmonic (266 nm) of laser light of 1064 nm in wavelength emitted from a YAG laser, and laser light of 308 nm in wavelength emitted from a XeCl excimer laser. The irradiation energy and irradiation time of the laser light to irradiate the organic semiconductor material layer may be appropriately determined by carrying out various types of tests. Examples of the method for laser light irradiation can include a method of irradiating the organic semiconductor material layer with laser light at once through a laser light shielding mask provided above the organic semiconductor material layer, or for example, a method of irradiating the organic semiconductor material layer with laser light sequentially in accordance with a pattern such as the organic semiconductor material layer. The adoption of these methods can appropriately select a region of the organic semiconductor material layer, which is irradiated with laser light. It is to be noted that, for example, a glass plate, a quartz plate, a plastic film, a plastic plate, a metal plate, or the like with a region formed for transmitting laser light and a region formed for shielding from laser light may be used as the laser light shielding mask in the former method. For the region for shielding laser light, a metal film such as, for example, chromium (Cr) may be formed. In addition, examples of the latter method can specifically include a method of irradiating the organic semiconductor material layer with laser light beams while sequential step movements of the beams (more specifically, a method of irradiating the organic semiconductor material layer with laser light beams by two-dimensional scanning in combination with a so-called raster scan method or a so-called vector scan method, while repeating the predetermined-distance movement and stop of a stage with a base body or a supporting member placed thereon).

In the electronic device and the like according to an embodiment of the present disclosure, materials for constituting the control electrode, first electrode, second electrode, gate electrode and source/drain electrode (hereinafter, which may be collectively referred to as "the control electrode, etc." in some cases) can include conductive substances, for example, metals such as platinum (Pt), gold (Au), palladium (Pd), chromium (Cr), molybdenum (Mo), nickel (Ni), aluminum (Al), silver (Ag), tantalum (Ta), tungsten (W), copper (Cu), titanium (Ti), indium (In), tin (Sn), iron (Fe), cobalt (Co), zinc (Zn), magnesium (Mg), manganese (Mn), ruthenium (Rh), rubidium (Rb), or alloys containing these metal elements, conductive particles including these metals, conductive particles of alloys containing these metals, ITO, and polysilicon containing impurities, and laminate structures (for example, MoOx/Au, CuO/Au) can be also adopted which have layers containing these elements. Furthermore, materials for constituting the control electrodes, etc. can also include organic materials (conductive polymers) such as poly(3,4-ethylenedioxythiophene)/polystyrene sulfonate[PEDOT/PSS], TTF-TCNQ, and polyaniline. The materials for constituting the control electrode, first electrode, second electrode, gate electrode, and source/drain electrode may be the same material, or different materials.

Methods for forming the control electrode, etc. can include, depending on the materials for constituting the electrodes, various types of application methods described later, physical vapor deposition (PVD), pulsed laser deposition (PLD), arc discharge methods, various types of chemical vapor deposition (CVD) including MOCVD, lift-off methods, shadow mask methods, and plating methods such as electrolytic plating methods, electroless plating methods, or combination thereof, which are each combined with a patterning technique, if necessary, and include various types of application methods with the use of an ink or a paste. Further, the PVD can include: (a) various types of vacuum deposition methods such as electron beam heating methods, resistive heating methods, flash deposition, and methods of heating crucibles; (b) plasma vapor deposition; (c) various types of sputtering methods such as diode sputtering methods, DC sputtering methods, DC magnetron sputtering methods, high-frequency sputtering methods, magnetron sputtering methods, ion beam sputtering methods, and bias sputtering methods; and (d) various types ion plating methods such as DC (direct current) methods, RF methods, multi-cathode methods, activated reactive methods, electric-field deposition methods, high-frequency ion plating methods, and reactive ion plating methods. In the case of forming a resist pattern, for example, a resist material is applied to form a resist layer, and the resist layer is then subjected to patterning with the use of a photolithographic technique, a laser drawing technique, an electron-beam drawing technique, an X-ray drawing technique, or the like. A resist pattern may be formed with the use of a resist transfer method or the like. In the case of forming the control electrode, etc. in accordance with an etching method, dry etching methods or wet etching methods may be adopted, and the dry etching methods can include, for example, ion milling and reactive ion etching (RIE). In addition, the control electrodes, etc. can be also formed in accordance with a laser ablation method, a mask vapor deposition method, a laser transfer method, or the like.

In the electronic device and the like according to an embodiment of the present disclosure, the insulating layer or gate insulating layer (hereinafter, which may be collectively referred to simply as "the insulating layer and the like" in some cases) may be a single layer or multiple layers. Materials for constituting the insulating layer and the like can include inorganic insulating materials and organic insulating materials. The inorganic insulating materials can include high-dielectric insulating materials of metal oxides such as silicon oxide-based materials, silicon nitride (SiN_Y), aluminum oxide (Al₂O₃), titanium oxide, and HfO₂. In addition, the organic insulating materials can include organic insulating materials as exemplified by organic insulating materials (organic polymers), for example, poly(methyl methacrylate) (PMMA), poly(vinyl phenol) (PVP), polyvinyl alcohol (PVA), polyimide, polycarbonate (PC), polyethylene terephthalate (PET), polystyrene, silanol derivatives (silane coupling agents) such as N-2(aminoethyl)3-aminopropyltrimethoxysilane (AEAPTMS), 3-mercaptopropyltrimethoxysilane (MPTMS), and octadecyltrichlorosilane (OTS), and linear hydrocarbons having, at one end thereof, such as octadecanethiol or dodecylisocianate, a functional group linkable with the gate electrode, and combination thereof can be also used. Examples of the silicon oxide-based materials can include silicon oxide (SiO_X), BPSG, PSG, BSG, AsSG, PbSG, silicon oxide nitride (SiON), SOG (Spin On Glass), and low-dielectric-constant SiO₂ based materials (for example, polyaryl ether, cycloperfluorocarbon polymers and benzocyclobutene, cyclic fluorine resins, polytetrafluoroethylene, arylether fluoride, polyimide fluoride, amorphous carbon, and organic SOG). Further, methods for forming the insulating layer and the like can include, besides the application method mentioned below, the various types of PVD and CVD mentioned above, sol-gel methods, lift-off methods, shadow mask methods, and electrodeposition methods, which are each combined with a patterning technique, if necessary, and patterning may be carried out in accordance with a laser ablation method, or patterning may be carried out through exposure to light and development with the use of a photosensitive material.

The application methods herein can include: various types of printing methods such as screen printing methods, ink-jet printing methods, offset printing methods, reverse offset printing methods, gravure printing methods, gravure offset printing methods, relief printing, flexographic printing, and microcontact printing; spin coat methods; various types of coating methods such as air doctor coater methods, blade coater methods, rod coater methods, knife coater methods, squeeze coater methods, reverse roll coater methods, transfer roll coater methods, gravure coater methods, kiss coater methods, cast coater methods, spray coater methods, slit coater methods, slit orifice coater methods, CAP coat methods, calendar coater methods, casting methods, capillary coater methods, bar coater methods, and dipping methods; spray methods; methods with the use of a dispenser; and methods of applying a liquid material, such as a stamp method.

In the electronic device and the like according to an embodiment of the present disclosure, examples of the organic semiconductor material can include polythiophene and derivatives thereof, poly-3-hexylthiophene[P3HT] of polythiophene with a hexyl group introduced therein, pentacene[2,3,6,7-dibenzoanthracene], derivatives of pentacene [e.g., TIPS(triisopropylsilylethynyl)-pentacene], dioxaanthanthrene compounds including 6,12-dioxaanthanthrene (so-called peri-Xanthenoxanthene, 6,12-dioxaanthanthrene, which may be abbreviated as "PXX" in some cases), polyanthracene, naphthacene, hexacene, heptacene, dibenzopentacene, tetrabenzopentacene, chrysene, perylene, coronene, Terrylene, ovalene, quaterrylene, Sir cam anthracene, benzopyrene, dibenzopyrene, triphenylene, polypyrrole and derivatives thereof, polyaniline and derivatives thereof, polyacetylenes, polydiacetylenes, polyazulenes, polyphenylene, polyfurans, polyindole, polyvinyl carbazole, polyselenophenes, polytellurophene, isothianaphthenes such as polyisothianaphthene, thienylene vinylenes such as poly(thienylene vinylene), polycarbazoles, polyphenylene sulfide, polyphenylene vinylene, polyphenylene sulfide, polyvinylene sulfide, poly(thienylene vinylene), polynaphthalene, polypyrenes, polyazulene, phthalocyanines typified by copper phthalocyanine, merocyanine, hemicyanine, polyethylenedioxythiophene, pyridazine, naphthalenetetracarboxdiimide, poly(3,4-ethylenedioxythiophene)/polystyrene sulfonate[PEDOT/PSS], and quinacridone. Alternatively, examples of the organic semiconductor material can include compounds selected from the group consisting of condensed polycyclic aromatic compounds, porphyrin derivatives, phenylvinylidene-based conjugated oligomers and thiophene-based conjugated oligomers. Specifically, the examples can include, for example, condensed polycyclic aromatic compounds such as acene molecules (e.g., pentacene, tetracene), porphyrin molecules, and conjugated oligomers (phenylvinylidenes and thiophenes).

Alternatively, examples of the organic semiconductor materials can include, for example, porphyrin, 4,4'-biphenyldithiol (BPDT), 4,4'-diisocyanobiphenyl, 4,4'-diisocyano-p-terphenyl, 2,5-bis(5'-thioacetyl-2'-thiophenyl)thiophene, 2,5-bis(5'-thioacetoxyl-2'-thiophenyl)thiophene, 4,4'-diisocyanophenyl, benzidine(biphenyl-4,4'-diamine), TCNQ (tetracyanoquinodimethane), charge-transfer complexes typified by tetrathiafulvalene (TTF)-TCNQ complexes, bisethylenetetrathiafulvalene (BEDTTTF)-perchloric acid complexes, BEDTTTF-iodine complex, and TCNQ-iodine complexes, biphenyl-4,4'-dicarboxylic acid, 1,4-di(4-thiophenylacetylenyl)-2-ethylbenzene, 1,4-di(4-isocyanophenylacetylenyl)-2-ethylbenzene, dendrimers, fullerenes such as C60, C70, C76, C78, and C84, 1,4-di(4-thiophenylethynyl)-2-ethylbenzene, 2,2''-dihydroxy-1,1' : 4',1''-terphenyl, 4,4'-biphenyldiethanal, 4,4'-biphenyldiol, 4,4'-biphenyldiisocyanate, 1,4-diacetynylbenzene, diethylbiphenyl-4,4'-dicarboxylate, benzo[1,2-c; 3,4-c'; 5,6-c'']tris[1,2]dithiol-1,4,7-trithione, alpha-sexithiophene, tetrathiotetracene, tetraselenotetracene, tetratellurtetracene, poly(3-alkylthiophene), poly(3-thiophene-b-ethanesulfonic acid), poly(N-alkylpyrrole)poly(3-alkylpyrrole), poly(3,4-dialkylpyrrole), poly(2,2'-thienylpyrrole), and poly(dibenzothiophenesulfide).

The organic semiconductor material may contain therein polymers, if necessary. The polymers only have to be dissolved in an organic solvent. Specifically, examples of the polymers (organic binding agents, binders) can include polystyrene, poly(alpha-methyl styrene), and polyolefin. Furthermore, if necessary, additives (so-called doping materials such as, for example, n-type impurities and p-type impurities) can be also added.

Examples of solvents for preparing a solution of the organic semiconductor material can include aromatics such as toluene, xylene, mesitylene, and tetralin; and ketones such as cyclopentanone and cyclohexanone; and hydrocarbons such as decalin. Above all, it is preferable to use a solvent with a relatively high boiling point, such as mesitylene, tetralin, and decalin, from the perspective of transistor characteristics, and from the perspective of preventing the organic semiconductor material from being rapidly dried in the formation of the organic semiconductor material layer

Methods for forming the organic semiconductor material layer can include application methods. For the application methods herein, common application methods can be all used without any difficulty, and specifically, example thereof can include, for example, the various types of application methods mentioned above. In some cases, the various types of PVD and CVD mentioned above, etc. can be also used.

Examples of the base body can include flexible plastic films, plastic sheets, and plastic substrates including organic polymers as exemplified by polymethylmethacrylate (polymethylmethacrylate, PMMA), polyvinyl alcohol (PVA), polyvinyl phenol (PVP), polyethersulfone (PES), polyimide, polyamide, polyacetal, polycarbonate (PC), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethyl ether ketone, and polyolefin, alternatively, include mica. The use of a base body including such a flexible organic polymer or polymer material makes it possible to incorporate or integrate electronic devices and semiconductor devices (TFTs) into, for example, image display apparatuses and electronics which have a curved shape. Alternatively, examples of the base body can include various types of glass substrates, various types of glass substrates with an insulating film formed on surfaces thereof, quartz substrates, quartz substrates with an insulating film formed on surfaces thereof, silicon substrates, silicon substrates with an insulating film formed on surfaces thereof, sapphire substrates, metal substrates including various types of alloys or various types of metals, such as stainless steels, aluminum, and nickel, metal foil, and paper. The base body may be placed on a supporting member appropriately selected from the materials mentioned above (or above the supporting member). Other examples of the supporting member can include conductive substrates (substrates including metals such as gold and aluminum, substrates including highly oriented graphite, stainless-steel substrates, etc.). On these base bodies, functional films may be formed, such as buffer layers for improving adhesion or flatness and barrier films for improving gas barrier properties. Some of these base bodies absorb laser light used for processing, and when there is the problem of heat generation by laser light absorption, the emergence of such a problem can be avoided by providing a layer which absorbs no laser light (laser light non-absorbing layer) or a layer which hardly absorbs laser light (laser light hardly absorbing layer) on the base body. It is to be noted that materials for constituting the laser light non-absorbing layer or the laser light hardly absorbing layer can include, for example, silicon oxides SiO_x, silicon nitrides SiN_Y, silicon oxynitrides SiO_XN_Y, aluminum oxides AlO_x, polyethylene, polypropylene, PMMA, and fluorine-containing resins.

Examples of the supporting member can include base bodies mentioned above, and conductive substrates (substrates including various types of alloys or various types of metals, e.g., substrates including metals such as gold and aluminum, substrates including highly oriented graphite, stainless-steel substrates). In addition, materials for constituting the insulating layer provided on the supporting member can also include the materials for constituting the gate insulating layer, and known insulating films can be widely used.

The electronic device according to an embodiment of the present disclosure may have a so-called three-terminal structure or a two-terminal structure. The electronic device which has a three-terminal structure constitutes, for example, a field-effect transistor as previously described, more specifically, a thin film transistor (TFT). Alternatively, the electronic device which has a three-terminal structure constitutes, for example, a light-emitting element. More specifically, the device can constitute a light-emitting element (organic light-emitting element, organic light-emitting transistor) where the organic semiconductor material layer (active layer) emits light by voltage application to the control electrode, the first electrode, and the second electrode. In these electronic devices, the voltage applied to the control electrode controls the electric current flowing through the organic semiconductor material layer from the first electrode toward the second electrode. Whether the electronic device fulfills a function as a field-effect transistor or functions as a light-emitting element depends on the voltage application (bias) to the first electrode and the second electrode. First, when the control electrode is modulated with a bias applied to the extent that electrons are not injected from the second electrode, an electric current flows from the first electrode to the second electrode. This is a transistor operation. On the other hand, when the bias to the first electrode and the second electrode is increased with holes sufficiently accumulated, electron injection is started, and luminescence is produced by recombination of the electrons with holes. In addition, examples of the electronic device which has a two-terminal structure can include a photoelectric conversion element where irradiation of the organic semiconductor material layer (active layer) with light allows an electric current to flow between the first electrode and the second electrode.

The electronic device according to an embodiment of the present disclosure can be also used as a sensor. Examples of the sensor can include optical sensors and photoelectric conversion elements (specifically, solar cells and image sensors). Specifically, dyes which absorb light (including not only visible light, but also ultraviolet and infrared) may be used as organic semiconductor molecules for constituting the organic semiconductor material layers (active layers) of the optical sensors. In addition, in the case of the photoelectric conversion elements, the irradiation of the organic semiconductor material layer with light (including not only visible light, but also ultraviolet and infrared) allows an electric current to flow between the first electrode and the second electrode. It is to be noted that the electronic device which has a three-terminal structure can also constitute a photoelectric conversion element, in this case, a voltage may or may not be applied to the control electrode, and in the former case, the application of the voltage to the control electrode makes it possible to modulate a flowing electric current. In addition, examples of the sensor according to an embodiment of the present disclosure can also include chemical substance sensors for measuring the amount (concentration) of a chemical substance adsorbed on the organic semiconductor material layer by applying an electric current between the first electrode and the second electrode or applying an appropriate voltage between the first electrode and the second electrode, and measuring the electrical resistance value of the organic semiconductor material layer, with the use of the fact that the electrical resistance value between the first electrode and the second electrode is changed when the chemical substance to be detected is adsorbed on the organic semiconductor material layer. Alternatively, the examples can also include molecule sensors which have a molecular recognition ability, and biosensors prepared by binding and anchoring binding molecules (for example, biomolecules) to the surface of the organic semiconductor material layer, and further adding functional molecules (for example, another biomolecules) which interact with the binding molecules. It is to be noted that because of the chemical substance in adsorption equilibrium on the organic semiconductor material layer, the equilibrium state is also changed when the amount (concentration) of the chemical substance is changed with time in an atmosphere in which the organic semiconductor material layer is placed. Examples of the chemical substance can include, for example, NO₂ gas, O₂ gas, NH₃ gas, styrene gas, hexane gas, octane gas, decane gas, and trimethylbenzene gas.

Although not to be limited to, an image display apparatus can be exemplified as an example of the apparatus into which the electronic device according to an embodiment of the present disclosure is incorporated. Examples of the image display apparatus according to an embodiment of the present disclosure can include liquid crystal displays, organic electroluminescent displays, plasma displays, electrophoretic displays including electrophoretic display elements, cold cathode field emission displays, and displays including semiconductor light-emitting elements such as light emitting diodes. In addition, examples of the image display apparatus can include various types of image display apparatuses (for example, the various types of image display apparatuses mentioned above) in, for example, so-called desktop personal computers, notebook personal computers, mobile personal computers, and tablet terminals including tablet personal computers, PDAs (Personal Digital Assistance), car navigation systems, cellular phones and smartphones, game machines, electronic books, electronic papers such as electronic newspaper, signboards, posters, bulletin boards such as blackboards, copy machines, alternative rewritable papers to printer papers, calculators, display units of home appliances, display units of reward cards, etc., electronic advertisements, electronic POP, etc. In addition, examples thereof can also include various types of lighting systems.

When the electronic device according to an embodiment of the present disclosure is applied to or used for various types of electronics including image display apparatuses, electronic papers, and RFIDs (Radio Frequency Identification Card), monolithic integrated circuits may be provided which have a large number of electronic devices integrated on a supporting member, or respective electronic devices may be cut for individualization, and used as discrete components. In addition, the electronic devices may be sealed with resin.

Example 1 relates to an electronic device according to an embodiment of the present disclosure, specifically, a first bottom-gate/top-contact type electronic device (more specifically, a thin film transistor, TFT as a semiconductor device), methods for manufacturing the electronic device according to first and second aspects of the present disclosure, a substrate for constituting an image display apparatus according to an embodiment of the present disclosure, and an image display apparatus according to an embodiment of the present disclosure. Fig. 1A shows a schematic diagram illustrating the arrangement of an organic semiconductor material layer, etc. for an electronic device according to Example 1, and Figs. 1B and 1C show a schematic partial cross-sectional view along the arrows B-B of Fig. 1A, and a schematic partial cross-sectional view along the arrows C-C of Fig. 1A. It is to be noted that in the schematic diagram illustrating the arrangement of the organic semiconductor material layer, etc. for the electronic device, the organic semiconductor material layer and an altered region are shaded in order to clearly specify the organic semiconductor material layer and altered region.

The electronic device according to Example 1 or Examples 2 to 9 as will be described later includes a first electrode 26 and a second electrode 27, a patterned organic semiconductor material layer 23, as well as a conductive altered region 30 extending from the organic semiconductor material layer 23, which is obtained by patterning and altering the organic semiconductor material constituting the organic semiconductor material layer 23. Further, at least a portion of an arbitrary pathway connecting the first electrode 26 and the second electrode 27 is not provided with the altered region 30.

In addition, the substrate (backplane) for constituting an image display apparatus according to Example 1 is a substrate that has a plurality of electronic devices according to Example 1 or Examples 2 to 8 as will be described later arranged in a two-dimensional matrix form in a first direction and a second direction. Furthermore, the image display apparatus according to Example 1 includes the substrate for constituting an image display apparatus according to Example 1.

In the electronic device herein according to Example 1 or Examples 2 to 9 as will be described later, the organic semiconductor material layer 23 has a first side 231 and a third side 233 parallel in a direction in which the first electrode 26 and the second electrode 27 extend, as well as a second side 232 and a fourth side 234 connecting the first side 231 and third side 233, with a first region 301 of the altered region in contact with the first side 231 of the organic semiconductor material layer 23, and a second region 302 of the altered region in contact with the third side 233 of the organic semiconductor material layer 23, and the altered region 30 is not provided along the second side 232 and fourth side 234 of the organic semiconductor material layer 23.

In addition, the electronic device according to Example 1 or Examples 2 to 8 as will be described later is a so-called three-terminal electronic device, which further includes a control electrode 21.

The electronic device according to Example 1 is, more specifically, a first bottom-gate/top-contact type electronic device, which further includes an insulating layer 22. Further, the control electrode 21 is formed on a base body 10, the insulating layer 22 is formed on the control electrode 21 and the base body 10, the organic semiconductor material layer 23 is formed on the insulating layer 22, and the first electrode 26 and the second electrode 27 are formed on the organic semiconductor material layer 23. Furthermore, there is the first electrode 26 in contact with the first region 301 of the altered region, whereas there is the second electrode 27 in contact with the second region 302 of the altered region.

Then, the electronic device according to Example 1 or Examples 2 to 8 as will be described later specifically including a thin film transistor (TFT), where the control electrode 21 constitutes a gate electrode, the insulating layer 22 constitutes a gate insulating layer, the first electrode 26 and second electrode 27 constitute source/drain electrodes, and the organic semiconductor material layer 23 located between the first electrode 26 and the second electrode 27 constitutes a channel forming region 24.

Specifically, the first electrode 26 and the second electrode 27 are formed over a channel forming region extension 25 extending from the channel forming region 24 (corresponding to a portion of the organic semiconductor material layer 23). In addition, the altered region 30 is formed at outer edges of the channel forming region extension 25.

The substrate (backplane) constituting an image display apparatus according to Example 1 has a plurality of electronic devices (TFT) according to Example 1 or Examples 2 to 8 as will be described later arranged in a two-dimensional matrix form in a first direction and a second direction, and the control electrodes 21 (gate electrodes) of the electronic devices arranged in the first direction are connected to gate wirings extending in the first direction, whereas the first electrodes 26 (source/drain electrodes on either one side) of the electronic devices arranged in the second direction are connected to signal wirings extending in the second direction.

Furthermore, the image display apparatus according to Example 1 includes the substrate (backplane) for constituting an image display apparatus according to Example 1.

In Example 1 or Examples 2 to 8 as will be described later herein, the base body 10 includes, for example, a plastic film such as PET, PEN, PES, or polyimide, metal foil, or glass. The control electrode (gate electrode) 21 includes, for example, aluminum (Al) or a laminate structure of Al and TI. The insulating layer (gate insulating layer) 22 includes, for example, polyvinylphenol (PVP). The organic semiconductor material layer 23 includes, for example, pentacene or TIPS-pentacene, or a derivative of peri-Xanthenoxanthene (PXX) (more specifically, for example, ethylphenyl-PXX). The first electrode 26 and the second electrode 27 (the pair of source/drain electrodes) include, for example, gold (Au) or copper (Cu).

A method for manufacturing the electronic device according to Example 1 will be described below with reference to Figs. 3A, 3B, 3C, 4A, 4B, and 5A. It is to be noted that Figs. 3A, 3B, and 4A are schematic partial cross-sectional views of the base body, etc. as in the case of along the arrows B-B of Fig. 1A, whereas Figs. 3C, 4B, and 5A are schematic diagrams illustrating the arrangement of the organic semiconductor material layer, etc.

(Step-100)
First, the control electrode 21 is formed on the base body 10. Specifically, the control electrode 21 is formed by a vacuum deposition method while the base body 10 including a glass substrate 11 and an insulating film 12 is partially covered with a hard mask. In this way, the control electrode 21 can be formed without any photolithography process. However, the method for forming the control electrode 21 is not limited thereto, but the control electrode 21 may be formed in accordance with a combination of a deposition technique for a conductive material layer for constituting the control electrode 21 and an etching technique, formed in accordance with a so-called lift-off method, or formed in accordance with a printing method.

(Step-110)
Next, the insulating layer 22 is formed on the base body 10 and the control electrode 21. Specifically, the insulating layer 22 is formed over the entire surface in accordance with a spin coat method. More specifically, the insulating layer 22 of polyvinylphenol can be obtained by applying a polyvinylphenol (PVP) solution containing a cross-linking agent onto the base body 10 and the control electrode 21, and then heating the solution to 150 degrees Celsius.

(Step-120)
Thereafter, the organic semiconductor material layer 23 including an organic semiconductor material is formed over the base body 10. Specifically, the organic semiconductor material layer 23 is formed on the insulating layer 22 in accordance with, for example, a spin coat method (see Fig. 3A). In the spin coat method, used was an organic semiconductor material solution with an organic semiconductor material dissolved in a solvent, specifically, an organic semiconductor material solution with ethylphenyl-PXX dissolved in toluene.

(Step-130)
Then, the organic semiconductor material layer 23 is subjected to patterning. Specifically, the organic semiconductor material layer 23 is subjected to patterning by a laser ablation method. More specifically, the organic semiconductor material layer 23 is subjected to patterning, in such a way that a desired region of the organic semiconductor material layer 23 is irradiated with laser light of 248 nm in wavelength emitted from a KrF excimer laser to remove an unnecessary region of the organic semiconductor material layer 23. In this case, the laser irradiation energy is set at a high level in order to achieve high productivity. As a result, the unnecessary region of the organic semiconductor material layer 23 can be rapidly removed, while the conductive altered region 30 obtained by altering the organic semiconductor material constituting the organic semiconductor material layer 23 is formed at outer edge regions of the patterned organic semiconductor material layer 23 (see Figs. 3B and 3C). In some cases, when the organic semiconductor material layer 23 is subjected to patterning by a laser ablation method, the insulating layer 22 is also slightly removed in the thickness direction. In this way, the organic semiconductor material layer 23 can be formed which has the first side 231 and third side 233 parallel in the direction in which the first electrode 26 and second electrode 27 extend, as well as the second side 232 and fourth side 234 connecting the first side 231 and third side 233. The organic semiconductor material layer 23 is rectangular in planar shape.

(Step-140)
Then, the first electrode 26 and the second electrode 27 are formed on the organic semiconductor material layer 23. Specifically, on the organic semiconductor material layer 23, more specifically, on the channel forming region extension 25 extending from the channel forming region 24, the first electrode 26 and the second electrode 27 (the pair of source/drain electrodes) are formed. That is to say, the first electrode 26 and the second electrode 27 can be formed in accordance with a combination of a deposition technique for conductive material layers for constituting the first electrode 26 and second electrode 27 and an etching technique. However, the method for forming the first electrode 26 and the second electrode 27 is not limited thereto, but the first electrode 26 and the second electrode 27 may be formed by a vapor deposition method while the region other than the region on which the first electrode 26 and the second electrode 27 are to be formed is covered with a hard mask, formed in accordance with a so-called lift-off method, or formed in accordance with a printing method. In this way, the structure can be obtained as shown in Figs. 4A and 4B.

(Step-150)
Thereafter, a portion 23' of the organic semiconductor material layer 23 is removed along the second side 232 and fourth side 234 of the organic semiconductor material layer 23. Specifically, a passivation film 28 for covering a portion of the patterned organic semiconductor material layer 23, the first electrode 26, and the second electrode 27 is formed in accordance with a CVD method and a patterning technique (see Fig. 5A). The second side 232 and fourth side 234 of the patterned organic semiconductor material layer 23, as well as the portion 23' of the organic semiconductor material layer 23, which is located near the second side 232 and the fourth side 234, are not covered with the passivation film 28. Then, the portion 23' of the organic semiconductor material layer 23 (including the altered region 30), which is not covered with the passivation film 28, and located near the second side 232 and fourth side 234 is removed by a laser ablation method under an optimized condition (the laser irradiation energy is set at a low level), or a dry etching method or a wet etching method under an optimized condition. It is to be noted that the conditions for the laser ablation method, the dry etching method, and the wet etching method may be conditions such that the altered region 30 is not newly formed, through various types of tests. Thereafter, the removal of the passivation film 28 can provide the electronic device (TFT) according to Example 1 as shown in Figs. 1A, 1B, and 1C. It is to be noted that the passivation film 28 may be left. Alternatively, a substrate for constituting an image display apparatus, or an image display apparatus can be obtained which includes the electronic device (TFT) according to Example 1.

(Step-160)
For example, in the manufacture of the image display apparatus, the image display apparatus can be manufactured by, following this step, forming an image display unit (specifically, for example, an image display unit including an organic electroluminescent element, an electrophoretic display element, a semiconductor light-emitting element or the like) in accordance with a known method, over or above the thus obtained TFT as an electronic device for constituting a control unit (pixel driving circuit) of an image display apparatus. In this case, the thus obtained electronic device for constituting the control unit (pixel driving circuit) of the image display apparatus, and an electrode (e.g., a pixel electrode) in the image display unit may be connected with a connection such as contact holes or wiring. The same applies to Examples 2 to 8 below.

An electronic device obtained without removing the portion 23' of the organic semiconductor material layer 23 along the second side 232 and fourth side 234 of the organic semiconductor material layer 23 is regarded as an electronic device according to Comparative Example 1A, an electronic device obtained by removing about 15 mm in width from the portion 23' of the organic semiconductor material layer 23 along the second side 232 and fourth side 234 of the organic semiconductor material layer 23 is regarded as an electronic device according to Comparative Example 1B, and an electronic device obtained by removing about 30 mm in width from the portion 23' of the organic semiconductor material layer 23 along the second side 232 and fourth side 234 of the organic semiconductor material layer 23 is regarded as the electronic device according to Example 1. Then, V-I characteristics were evaluated for each electronic device. The results are shown in Fig. 22. In Fig. 22, the symbols "C", "B", and "A" respectively denote data on Comparative Example 1A, data on Comparative Example 1B, and data on Example 1. Further, the channel length was 100 mm, the channel width was 240 mm, and the drain voltage was -30 volts. It is determined that the electronic devices according to Comparative Example 1A and Comparative Example 1B are larger in off-state current value because leakage current flows between the electrodes through the altered region 30, as compared with the electronic device according to Example 1. On the other hand, the electronic device according to Example 1 is smaller in off-state current value, because leakage current can be reduced without any current pathway produced by short circuit, due to the fact that an arbitrary pathway connecting the first electrode 26 and the second electrode 27 is not provided with the altered region 30.

In the case of the electronic device according to Example 1, simplification of the patterning step can be achieved, because the organic semiconductor material layer is subjected to patterning by a laser ablation method. Further, at least a portion of an arbitrary pathway connecting the first electrode and the second electrode is not provided with the altered region. Therefore, leakage current can be reduced without any current pathway produced by short circuit, and characteristic degradation of the electronic device is hardly caused. On the other hand, the increase in on-state current and the reduction in contact resistance can be achieved because of including the conductive altered region of the altered organic semiconductor material.

It is to be noted that (Step-140) and (Step-150) described above may be carried out in reverse order. That is to say, after forming the first electrode 26 and the second electrode 27 (the pair of source/drain electrodes) on the organic semiconductor material layer 23, a portion (including the altered region 30) of the organic semiconductor material layer 23 may be irradiated with laser light to obtain the patterned organic semiconductor material layer 23. In addition, the altered region 30 may be formed outside the first electrode 26 and the second electrode 27, as Fig. 2A shows a schematic diagram illustrating the arrangement of an organic semiconductor material layer, etc., for a modification example of the electronic device according to Example 1, whereas Fig. 2B shows a schematic partial cross-sectional view along the arrows B-B of Fig. 2A. Moreover, in (Step-150), in place of removing the portion 23' of the organic semiconductor material layer 23 (including the altered region 30) by a laser ablation method or the like under optimized conditions, the second side 232 and fourth side 234 of the patterned organic semiconductor material layer 23, as well as the portion 23' of the organic semiconductor material layer 23, which is located near the second side 232 and the fourth side 234 may be separated from the portions of the organic semiconductor material layer 23, which function as the channel forming region 24 and the channel forming region extension 25, in accordance with, for example, a physical removal method with the use of a needle or the like, as shown in Fig. 5B. From the separated part (separation groove) 29, the organic semiconductor material layer 23 is removed.

Example 2 is a modification of Example 1, which relates to a second bottom-gate/top-contact type electronic device. Fig. 2C shows a schematic partial cross-sectional view of an electronic device according to Example 2 as in the case of along the arrows B-B of Fig. 1A.

The electronic device according to Example 2 also further includes an insulating layer 22. Further, a control electrode 21 is formed on a base body 10, the insulating layer 22 is formed on the control electrode 21 and the base body 10, an organic semiconductor material layer 23, a first region 301 of an altered region, and a second region 302 of the altered region are formed on the insulating layer 22, and a first electrode 26 is formed on the first region 301 of the altered region, and the second electrode 27 is formed on the second region 302 of the altered region.

The channel forming region extension 25 serves as the first region 301 of the altered region and the second region 302 of the altered region. The first region 301 of the altered region extends from an end surface of the first electrode 26 opposed to the second electrode 27 toward the second electrode 27. In addition, the second region 302 of the altered region extends from an end surface of the second electrode 27 opposed to the first electrode 26 toward the first electrode 26. Furthermore, there is the organic semiconductor material layer 23 corresponding to a channel forming region 24 between extensions 31 of the altered region 30. As just described, a shorter channel can be achieved because the organic semiconductor material layer 23 is formed in a portion of the region between the first electrode 26 and the second electrode 27.

Example 3 is also a modification of Example 1, which relates to a first bottom-gate/bottom-contact type electronic device. Fig. 6A shows a schematic diagram illustrating the arrangement of an organic semiconductor material layer, etc. for an electronic device according to Example 3, and Figs. 6B and 6C are respectively a schematic partial cross-sectional view along the arrows B-B of Fig. 6A and a schematic partial cross-sectional view along the arrows C-C of Fig. 6A.

The electronic device according to Example 3 also further includes an insulating layer 22. Further, a control electrode 21 is formed on a base body 10, the insulating layer 22 is formed on the control electrode 21 and the base body 10, a first electrode 26 and a second electrode 27 are formed on the insulating layer 22, an organic semiconductor material layer 23 is formed from on the insulating layer 22 to over the first electrode 26 and second electrode 27 between the first electrode 26 and the second electrode 27.

Furthermore, there is the first electrode 26 in contact with the first region 301 of the altered region, whereas there is the second electrode 27 in contact with the second region 302 of the altered region. The organic semiconductor material layer 23 located between the first electrode 26 and the second electrode 27 constitutes a channel forming region 24. The first electrode 26 and the second electrode 27 are formed below a channel forming region extension 25 extending from the channel forming region 24 (corresponding to a portion of the organic semiconductor material layer 23). In addition, the altered region 30 is formed at outer edges of the channel forming region extension 25.

A method for manufacturing the electronic device according to Example 3 will be described below with reference to Figs. 8A, 8B, 9A, 9B, and 10A. It is to be noted that Figs. 8A, 8B, and 9A are schematic partial cross-sectional views of the base body, etc. as in the case of along the arrows B-B of Fig. 6A, whereas Figs. 9B, and 10A are schematic diagrams illustrating the arrangement of the organic semiconductor material layer, etc.

(Step-300)
First, the control electrode 21 is formed on the base body 10, in the same way as in (Step-100) according to Example 1. Next, the insulating layer 22 is formed on the base body 10 and the control electrode 21, in the same way as in (Step-110) according to Example 1.

(Step-310)
Then, the first electrode 26 and the second electrode 27 are formed on the insulating layer 22, in the same way as in (Step-140) according to Example 1. In this way, the structure shown in Fig. 8A can be obtained.

(Step-320)
Thereafter, the organic semiconductor material layer 23 including an organic semiconductor material is formed over the first electrode 26, the second electrode 27, and the insulating layer 22, in the same way as in (Step-120) according to Example 1. In this way, the structure shown in Fig. 8B can be obtained.

(Step-330)
Then, the organic semiconductor material layer 23 is subjected to patterning, in the same way as in (Step-130) according to Example 1. The conductive altered region 30 obtained by altering the organic semiconductor material constituting the organic semiconductor material layer 23 is formed at outer edge regions of the patterned organic semiconductor material layer 23 (see Figs. 9A and 9B).

(Step-340)
Thereafter, a portion 23' of the organic semiconductor material layer 23 is removed along a second side 232 and a fourth side 234 of the organic semiconductor material layer 23, in the same way as in (Step-150) according to Example 1. Specifically, a passivation film 28 for covering a portion of the patterned organic semiconductor material layer 23, the first electrode 26, and the second electrode 27 is formed in accordance with a CVD method and a patterning technique (see Fig. 10A). Then, removed is the portion 23' of the organic semiconductor material layer 23 (including the altered region 30), which is not covered with the passivation film 28, and located near the second side 232 and fourth side 234. Thereafter, the removal of the passivation film 28 can provide the electronic device (TFT) according to Example 3 as shown in Figs. 6A, 6B, and 6C. It is to be noted that the passivation film 28 may be left. Alternatively, a substrate for constituting an image display apparatus, or an image display apparatus can be obtained which includes the electronic device (TFT) according to Example 3.

The altered region 30 may be formed outside the first electrode 26 and the second electrode 27, as Fig. 6A shows a schematic diagram illustrating the arrangement of an organic semiconductor material layer, etc., for a modification example of the electronic device according to Example 3, whereas Fig. 6B shows a schematic partial cross-sectional view along the arrows B-B of Fig. 6A. Moreover, in (Step-340), in place of removing the portion 23' of the organic semiconductor material layer 23 (including the altered region 30) by a laser ablation method or the like under optimized conditions, the second side 232 and fourth side 234 of the patterned organic semiconductor material layer 23, as well as the portion 23' of the organic semiconductor material layer 23, which is located near the second side 232 and the fourth side 234 may be separated from the portions of the organic semiconductor material layer 23, which function as the channel forming region 24 and the channel forming region extension 25, in accordance with, for example, a physical removal method with the use of a needle or the like, as shown in Fig. 10B. From the separated part (separation groove) 29, the organic semiconductor material layer 23 is removed.

Example 4 is a modification of Example 3, which relates to a second bottom-gate/bottom-contact type electronic device. Fig. 7C shows a schematic partial cross-sectional view of an electronic device according to Example 4 as in the case of along the arrows B-B of Fig. 6A.

The electronic device according to Example 4 also further includes an insulating layer 22. Further, a control electrode 21 is formed on a base body 10, the insulating layer 22 is formed on the control electrode 21 and the base body 10, a first electrode 26 and a second electrode 27 are formed on the insulating layer 22, an organic semiconductor material layer 23 is formed on the insulating layer 22 between the first electrode 26 and the second electrode 27, a first region 301 of an altered region is formed from on the insulating layer 22 to over the first electrode 26, and a second region 302 of the altered region is formed from on the insulating layer 22 to over the second electrode 27.

Example 5 is also a modification of Example 1, which relates to a first top-gate/bottom-contact type electronic device. Fig. 11A shows a schematic diagram illustrating the arrangement of an organic semiconductor material layer, etc. for an electronic device according to Example 5, and Figs. 11B and 11C show a schematic partial cross-sectional view along the arrows B-B of Fig. 11A and a schematic partial cross-sectional view along the arrows C-C of Fig. 11A.

The electronic device according to Example 5 also further includes an insulating layer 22. Further, a first electrode 26 and a second electrode 27 are formed on a base body 10, an organic semiconductor material layer 23 is formed from on the base body 10 to over the first electrode 26 and the second electrode 27 between the first electrode 26 and the second electrode 27, the insulating layer 22 is formed over the organic semiconductor material layer 23, and further over the altered region 30, and a control electrode 21 is formed on the insulating layer 22.

A method for manufacturing the electronic device according to Example 5 will be described below with reference to Figs. 13A, 13B, 13C, and 14A. It is to be noted that Figs. 13A and 13B are schematic partial cross-sectional views of the base body, etc. as in the case of along the arrows B-B of Fig. 11A, whereas Figs. 13C, and 14A are schematic diagrams illustrating the arrangement of the organic semiconductor material layer, etc.

(Step-500)
Then, the first electrode 26 and the second electrode 27 are formed on the base body 10, in the same way as in (Step-140) according to Example 1.

(Step-510)
Thereafter, the organic semiconductor material layer 23 including an organic semiconductor material is formed over the first electrode 26, the second electrode 27, and the base body 10, in the same way as in (Step-120) according to Example 1 (see Fig. 13A).

(Step-520)
Thereafter, the organic semiconductor material layer 23 is subjected to patterning, in the same way as in (Step-130) according to Example 1. The conductive altered region 30 obtained by altering the organic semiconductor material constituting the organic semiconductor material layer 23 is formed at outer edge regions of the patterned organic semiconductor material layer 23 (see Figs. 13B and 13C).

(Step-530)
Then, a portion 23' of the organic semiconductor material layer 23 is removed along a second side 232 and a fourth side 234 of the organic semiconductor material layer 23, in the same way as in (Step-150) according to Example 1. Specifically, a mask layer 28' for covering a portion of the patterned organic semiconductor material layer 23, the first electrode 26, and the second electrode 27 is formed in accordance with a CVD method and a patterning technique (see Fig. 14A). The second side 232 and fourth side 234 of the patterned organic semiconductor material layer 23, as well as the portion 23' of the organic semiconductor material layer 23, which is located near the second side 232 and the fourth side 234, are not covered with the mask layer 28'. Then, removed is the portion 23' of the organic semiconductor material layer 23 (including the altered region 30), which is not covered with the mask layer 28', and located near the second side 232 and fourth side 234. Thereafter, the mask layer 28' is removed.

(Step-540)
Thereafter, in the same way as in (Step-110) and (Step-100) according to Example 1, the insulating layer 22 is formed over the organic semiconductor material layer 23, the altered region 30, and the base body 10, and further, the control electrode 21 is formed on a portion of the insulating layer 22, which is opposed to the channel forming region 24. In this way, the electronic device (TFT) according to Example 1 can be obtained as shown in Figs. 11A, 11B, and 11C. Alternatively, a substrate for constituting an image display apparatus, or an image display apparatus can be obtained which includes the electronic device (TFT) according to Example 5.

The altered region 30 may be formed outside the first electrode 26 and the second electrode 27, as Fig. 12A shows a schematic diagram illustrating the arrangement of an organic semiconductor material layer, etc., for a modification example of the electronic device according to Example 5, whereas Fig. 12B shows a schematic partial cross-sectional view along the arrows B-B of Fig. 12A. Moreover, in (Step-520), in place of removing the portion 23' of the organic semiconductor material layer 23 (including the altered region 30) by a laser ablation method or the like under optimized conditions, the second side 232 and fourth side 234 of the patterned organic semiconductor material layer 23, as well as the portion 23' of the organic semiconductor material layer 23, which is located near the second side 232 and the fourth side 234 may be separated from the portions of the organic semiconductor material layer 23, which function as the channel forming region 24 and the channel forming region extension 25, in accordance with, for example, a physical removal method with the use of a needle or the like, as shown in Fig. 14B. From the separated part (separation groove) 29, the organic semiconductor material layer 23 is removed.

Example 6 is a modification of Example 5, which relates to a second top-gate/bottom-contact type electronic device. Fig. 12C shows a schematic partial cross-sectional view of an electronic device according to Example 6 as in the case of along the arrows B-B of Fig. 11A.

The electronic device according to Example 6 also further includes an insulating layer 22. Further, a first electrode 26 and a second electrode 27 are formed on a base body 10, an organic semiconductor material layer 23 is formed on the base body 10 between the first electrode 26 and the second electrode 27, a first region 301 of an altered region is formed from on the base body 10 to over the first electrode 26, a second region 302 of the altered region is formed from on the base body 10 to over the second electrode 27, the insulating layer 22 is formed over the organic semiconductor material layer 23, the first region 301 of the altered region, and the second region 302 of the altered region, and the control electrode 21 is formed on the insulating layer 22.

Example 7 is also a modification of Example 1, which relates to a first top-gate/top-contact type electronic device. Fig. 15A shows a schematic diagram illustrating the arrangement of an organic semiconductor material layer, etc. for an electronic device according to Example 7, and Figs. 15B and 15C show a schematic partial cross-sectional view along the arrows B-B of Fig. 15A, and a schematic partial cross-sectional view along the arrows C-C of Fig. 15A.

The electronic device according to Example 7 also further includes an insulating layer 22. Further, an organic semiconductor material layer 23 is formed on a base body 10, a first electrode 26 and a second electrode 27 are formed on the organic semiconductor material layer 23, the insulating layer 22 is formed over the first electrode 26, the second electrode 27, and the organic semiconductor material layer 23, and a control electrode 21 is formed on the insulating layer 22.

Furthermore, there is the first electrode 26 in contact with the first region 301 of the altered region, whereas there is the second electrode 27 in contact with the second region 302 of the altered region. The organic semiconductor material layer 23 located between the first electrode 26 and the second electrode 27 constitutes a channel forming region 24. The first electrode 26 and the second electrode 27 are formed over a channel forming region extension 25 extending from the channel forming region 24 (corresponding to a portion of the organic semiconductor material layer 23). In addition, the altered region 30 is formed at outer edges of the channel forming region extension 25.

A method for manufacturing the electronic device according to Example 7 will be described below with reference to Figs. 17A, 17B, 17C, and 18A. It is to be noted that Figs. 17A and 17B are schematic partial cross-sectional views of the base body, etc. as in the case of along the arrows B-B of Fig. 15A, whereas Figs. 17C, and 18A are schematic diagrams illustrating the arrangement of the organic semiconductor material layer, etc.

(Step-700)
First, the organic semiconductor material layer 23 including an organic semiconductor material is formed on the base body 10, in the same way as in (Step-120) according to Example 1 (see Fig. 17A).

(Step-710)
Next, the organic semiconductor material layer 23 is subjected to patterning, in the same way as in (Step-130) according to Example 1. The conductive altered region 30 obtained by altering the organic semiconductor material constituting the organic semiconductor material layer 23 is formed at outer edge regions of the patterned organic semiconductor material layer 23 (see Figs. 17B and 17C).

(Step-720)
Then, a portion 23' of the organic semiconductor material layer 23 is removed along a second side 232 and a fourth side 234 of the organic semiconductor material layer 23, in the same way as in (Step-150) according to Example 1. Specifically, a mask layer 28' for covering a portion of the patterned organic semiconductor material layer 23 is formed in accordance with a CVD method and a patterning technique (see Fig. 18A). The second side 232 and fourth side 234 of the patterned organic semiconductor material layer 23, as well as the portion 23' of the organic semiconductor material layer 23, which is located near the second side 232 and the fourth side 234, are not covered with the mask layer 28'. Then, removed is the portion 23' of the organic semiconductor material layer 23 (including the altered region 30), which is not covered with the mask layer 28', and located near the second side 232 and fourth side 234. Thereafter, the mask layer 28' is removed.

(Step-730)
Thereafter, the first electrode 26 and the second electrode 27 are formed on the organic semiconductor material layer 23 and the altered region 30, in the same way as in (Step-140) according to Example 1.

(Step-740)
Thereafter, in the same way as in (Step-110) and (Step-100) according to Example 1, the insulating layer 22 is formed over the organic semiconductor material layer 23, the first electrode 26, the second electrode 27, and the base body 10, and further, the control electrode 21 is formed on a portion of the insulating layer 22, which is opposed to the channel forming region 24. In this way, the electronic device (TFT) according to Example 1 can be obtained as shown in Figs. 15A, 15B, and 15C. Alternatively, a substrate for constituting an image display apparatus, or an image display apparatus can be obtained which includes the electronic device (TFT) according to Example 7.

The altered region 30 may be formed outside the first electrode 26 and the second electrode 27, as Fig. 16A shows a schematic diagram illustrating the arrangement of an organic semiconductor material layer, etc., for a modification example of the electronic device according to Example 7, whereas Fig. 16B shows a schematic partial cross-sectional view along the arrows B-B of Fig. 16A. Moreover, in (Step-720), in place of removing the portion 23' of the organic semiconductor material layer 23 (including the altered region 30) by a laser ablation method or the like under optimized conditions, the second side 232 and fourth side 234 of the patterned organic semiconductor material layer 23, as well as the portion 23' of the organic semiconductor material layer 23, which is located near the second side 232 and the fourth side 234 may be separated from the portions of the organic semiconductor material layer 23, which function as the channel forming region 24 and the channel forming region extension 25, in accordance with, for example, a physical removal method with the use of a needle or the like, as shown in Fig. 18B. From the separated part (separation groove) 29, the organic semiconductor material layer 23 is removed.

Example 8 is a modification of Example 7, which relates to a second top-gate/top-contact type electronic device. Fig. 16C shows a schematic partial cross-sectional view of an electronic device according to Example 8 as in the case of along the arrows B-B of Fig. 15A.

The electronic device according to Example 8 also further includes an insulating layer 22. Further, an organic semiconductor material layer 23, a first region 301 of an altered region, and a second region 302 of the altered region are formed on a base body 10, a first electrode 26 is formed on the first region 301 of the altered region, a second electrode 27 is formed on the second region 302 of the altered region, the insulating layer 22 is formed over the first electrode 26, the second electrode 27, the organic semiconductor material layer 23, the first region 301 of the altered region, and the second region 302 of the altered region, and a control electrode 21 is formed on the insulating layer 22.

The electronic device according to an embodiment of the present disclosure has been described entirely with reference to three-terminal electronic device as examples in Examples 1 to 8, but can be two-terminal electronic devices. The two-terminal electronic device includes, as shown in the schematic partial cross-sectional views of Figs. 19A and 19B, an organic semiconductor material layer 23 including an organic semiconductor material, which is formed on a base body 10, as well as a first electrode 26 and a second electrode 27 formed over or below the organic semiconductor material layer 23. The section of the organic semiconductor material layer 23 located between the first electrode 26 and the second electrode 27 functions as an active layer.

The appropriate selection of the materials for constituting the organic semiconductor material layer 23, base body 10,

electrodes

26, 27 allow this two-terminal electronic device to function as an optical sensor, a photoelectric conversion element (specifically, a solar cell or an image sensor), a light-emitting element, and also function as a sensor.

Specifically, the use of a dye which absorbs light (including not only visible light, but also ultraviolet and infrared) as organic semiconductor molecules for constituting the organic semiconductor material layer 23 can constitute an optical sensor, and constitute a photoelectric conversion element (specifically, a solar cell or an image sensor) which allows an electric current to flow between the first electrode 26 and the second electrode 27 by the irradiation of the organic semiconductor material layer 23 with light (including not only visible light, but also ultraviolet and infrared). In addition, specific examples can also include chemical substance sensors for measuring the amount (concentration) of a chemical substance adsorbed on the organic semiconductor material layer 23 by applying an electric current between the first electrode 26 and the second electrode 27 or applying an appropriate voltage between the first electrode 26 and the second electrode 27, and measuring the electrical resistance value of the organic semiconductor material layer 23, with the use of the fact that the electrical resistance value between the first electrode 26 and the second electrode 27 is changed when the chemical substance to be detected is adsorbed on the organic semiconductor material layer 23.

While the present disclosure has been described above with reference to the preferred examples, the present disclosure is not to be considered limited to these examples. The structures, configurations, forming conditions, manufacturing conditions of the electronic devices, image display apparatuses, substrate for constituting image display apparatuses, which are by way of example, can be appropriately changed. When the electronic device according to an embodiment of the present disclosure is applied to or used for displays or various types of electronics, monolithic integrated circuits may be provided which have a large number of electronic devices integrated on a base body or a supporting member, or respective electronic devices may be cut for individualization, and used as discrete components.

While the altered regions are formed when the organic semiconductor material layers are subjected to patterning by a laser ablation method in the examples, it has been confirmed that when the organic semiconductor material layers are subjected to, for example, patterning by a dry etching method with the use of a CF4 gas or a wet etching method, or plasma treatment, the altered regions are formed in outer edge regions of the patterned organic semiconductor material layers, depending on treatment conditions.

In Examples 2, 4, 6, and 8, the organic semiconductor material layer 23 may be further partially irradiated with laser light before or after removing the portion 23' of the organic semiconductor material layer 23 along the second side 232 and fourth side 234 of the organic semiconductor material layer 23, so as to form an extension 31 of the altered region 30.

As shown in Figs. 20A, 20B, and 21 which are schematic diagrams illustrating the arrangement of an organic semiconductor material layer, etc., the second side 232 and the fourth side 234 each including, for example, a combination of two line segments can reduce the removed area of the organic semiconductor material layer 23 in the case of removing the portion 23' of the organic semiconductor material layer 23 along the second side 232 and fourth side 234 of the organic semiconductor material layer 23, for example, in (Step-150) according to Example 1, and can reduce the removal time and reduce the energy required for the removal. It is to be noted that Fig. 20A shows the state obtained in (Step-140) according to Example 1, Fig. 20B shows the state with the passivation film 28 formed in (Step-150) according to Example 1, and Fig. 21 shows the state after the removal of the passivation film 28 in (Step-150) according to Example 1. In the electronic device shown in Fig. 21, at least a portion of an arbitrary pathway connecting the first electrode 26 and the second electrode 27 is provided with the altered region 30, but all of pathways connecting the first electrode 26 and the second electrode 27 are not occupied by the altered region 30. On the other hand, in the electronic devices described in Examples 1 to 9, an arbitrary pathway connecting the first electrode 26 and the second electrode 27 is not provided with the altered region 30.

Sensors can be also built up from the electronic devices (bottom-gate/top-contact type or top-gate/top-contact type electronic devices) described in Examples 1 to 8. For example, specifically, light-emitting elements are built up from the electronic devices. More specifically, the devices constitute light-emitting elements (organic light-emitting elements, organic light-emitting transistors) where the organic semiconductor material layer 23 emits light by voltage application to the control electrode 21, the first electrode 26, and the second electrode 27. Further, the voltage applied to the control electrode 21 controls the electric current flowing through the organic semiconductor material layer 23 from the first electrode 26 toward the second electrode 27. When the bias to the first electrode 26 and the second electrode 27 is increased with holes sufficiently accumulated, electron injection is started, and luminescence is produced by recombination of the electrons with holes.

It is to be noted that the present disclosure can provide the following aspects.
[A01] <<Electronic Device>>
An electronic device including a first electrode and a second electrode, a patterned organic semiconductor material layer, and a conductive altered region extending from the organic semiconductor material layer, which is obtained by patterning and altering the organic semiconductor material constituting the organic semiconductor material layer, where at least a portion of an arbitrary pathway connecting the first electrode and the second electrode is not provided with the altered region.
[A02] The electronic device according to [A01], where the organic semiconductor material layer has a first side and a third side parallel in a direction in which the first electrode and the second electrode extend, as well as a second side and a fourth side connecting the first side and third side, with a first region of an altered region in contact with the first side of the organic semiconductor material layer and a second region of an altered region in contact with the third side of the organic semiconductor material layer, without any altered region along the second side and fourth side of the organic semiconductor material layer.
[A03] The electronic device according to [A02], further including a control electrode.
[A04] <<Bottom-Gate/Top-Contact Type>>
The electronic device according to [A03], further including an insulating layer, where the control electrode is formed on a base body, the insulating layer is formed on the control electrode and the base body, the organic semiconductor material layer is formed on the insulating layer, and first and second electrodes are formed on the organic semiconductor material layer.
[A05] The electronic device according to [A04], having the first electrode in contact with the first region of the altered region and the second electrode in contact with the second region of the altered region.
[A06] The electronic device according to [A03], further including an insulating layer, where the control electrode is formed on a base body, the insulating layer is formed on the control electrode and the base body, the organic semiconductor material layer, the first region of the altered region, and the second region of the altered region are formed on the insulating layer, a first electrode is formed on the first region of the altered region, and a second electrode is formed on the second region of the altered region.
[A07] <<Bottom-Gate/Bottom-Contact Type>>
The electronic device according to [A03], further including an insulating layer, where the control electrode is formed on a base body, the insulating layer is formed on the control electrode and the base body, first and second electrodes are formed on the insulating layer, and the organic semiconductor material layer is formed from on the insulating layer to over the first and second electrodes between the first and second electrodes.
[A08] The electronic device according to [A07], having the first electrode in contact with the first region of the altered region and the second electrode in contact with the second region of the altered region.
[A09] The electronic device according to [A03], further including an insulating layer, where the control electrode is formed on a base body, the insulating layer is formed on the control electrode and the base body, first and second electrodes are formed on the insulating layer, the organic semiconductor material layer is formed on the insulating layer between the first and second electrodes, the first region of the altered region is formed from on the insulating layer to over the first electrode, and the second region of the altered region is formed from on the insulating layer to over the second electrode.
[A10] <<Top-Gate/Bottom-Contact Type>>
The electronic device according to [A03], further including an insulating layer, where first and second electrodes are formed on a base body, the organic semiconductor material layer is formed from on the base body to over the first and second electrodes between the first and second electrodes, the insulating layer is formed on the organic semiconductor material layer, and the control electrode is formed on the insulating layer.
[A11] The electronic device according to [A10], having the first electrode in contact with the first region of the altered region and the second electrode in contact with the second region of the altered region.
[A12] The electronic device according to [A03], further including an insulating layer, where first and second electrodes are formed on a base body, the organic semiconductor material layer is formed on the base body between the first and second electrodes, the first region of the altered region is formed from on the base body to over the first electrode, the second region of the altered region is formed from on the base body to over the second electrode, the insulating layer is formed on the organic semiconductor material layer, the first region of the altered region, and the second region of the altered region, and the control electrode is formed on the insulating layer.
[A13] <<Top-Gate/Top-Contact Type>>
The electronic device according to [A03], further including an insulating layer, where the organic semiconductor material layer is formed on a base body, first and second electrodes are formed on the organic semiconductor material layer, the insulating layer is formed on the first and second electrodes and the organic semiconductor material layer, and the control electrode is formed on the insulating layer.
[A14] The electronic device according to [A13], having the first electrode in contact with the first region of the altered region and the second electrode in contact with the second region of the altered region.
[A15] The electronic device according to [A03], further including an insulating layer, where the organic semiconductor material layer, the first region of the altered region, and the second region of the altered region are formed on a base body, a first electrode is formed on the first region of the altered region, a second electrode is formed on the second region of the altered region, the insulating layer is formed on the first and second electrodes, the organic semiconductor material layer, the first region of the altered region, and the second region of the altered region, and the control electrode is formed on the insulating layer.
[A16] The electronic device according to any one of [A03] to [A15], including a thin film transistor, further including an insulating layer, and including the control electrode for constituting a gate electrode, the insulating layer for constituting a gate insulating layer, the first electrode and second electrode for constituting source/drain electrodes, and the organic semiconductor material layer located between the first and second electrodes for constituting a channel forming region.
[A17] The electronic device according to [A01] or [A02], the device including a sensor.
[B01] <<Substrate for Constituting Image Display Apparatus>>
A substrate for constituting an image display apparatus, the substrate including a plurality of electronic devices according to any one of [A03] to [A16] arranged in a two-dimensional matrix form in a first direction and a second direction.
[B02] <<Image Display Apparatus>>
An image display apparatus including the substrate for constituting an image display apparatus according to [B01].
[C01] <<Method for Manufacturing Electronic Device ... First Aspect>>
A method for manufacturing an electronic device, the method including: forming an organic semiconductor material layer including an organic semiconductor material on a base body; then patterning the organic semiconductor material layer; forming a first electrode and a second electrode on the organic semiconductor material layer; and then removing a portion of the organic semiconductor material layer along a second side and a fourth side of the organic semiconductor material layer, when sides of the patterned organic semiconductor material layer, which are parallel in a direction in which the first electrode and the second electrode extend, are regarded as a first side and a third side, whereas sides connecting the first side and third side are regarded as the second side and the fourth side.
[C02] <<Method for Manufacturing Electronic Device ... Second Aspect>>
A method for manufacturing an electronic device, the method including: forming at least a first electrode, a second electrode, and an organic semiconductor material layer including an organic semiconductor material on a base body; then patterning the organic semiconductor material layer; further forming an organic semiconductor material layer with a first side and a third side parallel in a direction in which the first electrode and the second electrode extend as well as a second side and a fourth side connecting the first side and third side; and then removing a portion of the organic semiconductor material layer along the second side and fourth side of the organic semiconductor material layer.

It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and alterations may occur depending on design requirements and other factors insofar as they are within the scope of the appended claims or the equivalents thereof.

10 Base body
11 Glass substrate
12 Insulating film
21 Control electrode (gate electrode)
22 Insulating layer (gate insulating layer)
23 Organic semiconductor material layer
231 First side
232 Second side
233 Third side
234 Fourth side
23' Removed portion of organic semiconductor material layer
24 Channel forming region
25 Channel forming region extension
26 First electrode (source/drain electrode)
27 Second electrode (source/drain electrode)
28 Passivation film
28' Mask layer
29 Separated part (separation groove)
30 Altered region
301 First region of altered region
302 Second region of altered region
31 Extension of altered region

Claims

An electronic device comprising: a first electrode and a second electrode;
a patterned organic semiconductor material layer; and
a conductive altered region extending from the organic semiconductor material layer, the altered region obtained by patterning and altering the organic semiconductor material constituting the organic semiconductor material layer,
wherein at least a portion of an arbitrary pathway connecting the first electrode and the second electrode is not provided with the altered region.
The electronic device according to claim 1, wherein the organic semiconductor material layer has a first side and a third side parallel in a direction in which the first electrode and the second electrode extend, as well as a second side and a fourth side connecting the first side and third side,
with a first region of an altered region in contact with the first side of the organic semiconductor material layer and
with a second region of an altered region in contact with the third side of the organic semiconductor material layer,
without any altered region along the second side and fourth side of the organic semiconductor material layer.
The electronic device according to claim 2, further comprising a control electrode.
The electronic device according to claim 3, further comprising an insulating layer,
wherein the control electrode is formed on a base body,
the insulating layer is formed on the control electrode and the base body,
the organic semiconductor material layer is formed on the insulating layer, and
first and second electrodes are formed on the organic semiconductor material layer.
The electronic device according to claim 4,
having the first electrode in contact with the first region of the altered region and
the second electrode in contact with the second region of the altered region.
The electronic device according to claim 3, further comprising an insulating layer,
wherein the control electrode is formed on a base body,
the insulating layer is formed on the control electrode and the base body,
the organic semiconductor material layer, the first region of the altered region, and the second region of the altered region are formed on the insulating layer,
a first electrode is formed on the first region of the altered region, and
a second electrode is formed on the second region of the altered region.
The electronic device according to claim 3, further comprising an insulating layer,
wherein the control electrode is formed on a base body,
the insulating layer is formed on the control electrode and the base body,
first and second electrodes are formed on the insulating layer, and
the organic semiconductor material layer is formed from on the insulating layer to over the first and second electrodes between the first and second electrodes.
The electronic device according to claim 7,
having the first electrode in contact with the first region of the altered region and
having the second electrode in contact with the second region of the altered region.
The electronic device according to claim 3, further comprising an insulating layer,
wherein the control electrode is formed on a base body,
the insulating layer is formed on the control electrode and the base body,
first and second electrodes are formed on the insulating layer,
the organic semiconductor material layer is formed on the insulating layer between the first and second electrodes,
the first region of the altered region is formed from on the insulating layer to over the first electrode, and
the second region of the altered region is formed from on the insulating layer to over the second electrode.
The electronic device according to claim 3, further comprising an insulating layer,
wherein first and second electrodes are formed on a base body,
the organic semiconductor material layer is formed from on the base body to over the first and second electrodes between the first and second electrodes,
the insulating layer is formed on the organic semiconductor mater, and
the control electrode is formed on the insulating layer.
The electronic device according to claim 10,
having the first electrode in contact with the first region of the altered region and
having the second electrode in contact with the second region of the altered region.
The electronic device according to claim 3, further comprising an insulating layer,
wherein first and second electrodes are formed on a base body,
the organic semiconductor material layer is formed on the base body between the first and second electrodes,
the first region of the altered region is formed from on the base body to over the first electrode,
the second region of the altered region is formed from on the base body to over the second electrode,
the insulating layer is formed on the organic semiconductor material layer, the first region of the altered region, and the second region of the altered region, and
the control electrode is formed on the insulating layer.
The electronic device according to claim 3, further comprising an insulating layer,
wherein the organic semiconductor material layer is formed on a base body,
first and second electrodes are formed on the organic semiconductor material layer,
the insulating layer is formed on the first and second electrodes and the organic semiconductor material layer, and
the control electrode is formed on the insulating layer.
The electronic device according to claim 13,
having the first electrode in contact with the first region of the altered region and
having the second electrode in contact with the second region of the altered region.
The electronic device according to claim 3, further comprising an insulating layer,
wherein the organic semiconductor material layer, the first region of the altered region, and the second region of the altered region are formed on a base body,
a first electrode is formed on the first region of the altered region,
a second electrode is formed on the second region of the altered region,
the insulating layer is formed on the first and second electrodes, the organic semiconductor material layer, the first region of the altered region, and the second region of the altered region, and
the control electrode is formed on the insulating layer.
The electronic device according to claim 3, comprising a thin film transistor,
further including an insulating layer,
the device including:
the control electrode for constituting a gate electrode,
the insulating layer for constituting a gate insulating layer,
the first electrode and second electrode for constituting source/drain electrodes, and
the organic semiconductor material layer located between the first and second electrodes for constituting a channel forming region.
A substrate for constituting an image display apparatus, the substrate including a plurality of electronic devices according to claim 3 arranged in a two-dimensional matrix form in a first direction and a second direction.
An image display apparatus comprising the substrate for constituting an image display apparatus according to claim 17.
A method for manufacturing an electronic device, the method comprising:
forming an organic semiconductor material layer including an organic semiconductor material on a base body; then
patterning the organic semiconductor material layer;
forming a first electrode and a second electrode on the organic semiconductor material layer; and
then removing a portion of the organic semiconductor material layer along a second side and a fourth side of the organic semiconductor material layer, when sides of the patterned organic semiconductor material layer, which are parallel in a direction in which the first electrode and the second electrode extend, are regarded as a first side and a third side, whereas sides connecting the first side and third side are regarded as the second side and the fourth side.
A method for manufacturing an electronic device, the method comprising:
forming at least a first electrode, a second electrode, and an organic semiconductor material layer including an organic semiconductor material on a base body; then
patterning the organic semiconductor material layer;
further forming an organic semiconductor material layer with a first side and a third side parallel in a direction in which the first electrode and the second electrode extend as well as a second side and a fourth side connecting the first side and third side; and
then removing a portion of the organic semiconductor material layer along the second side and fourth side of the organic semiconductor material layer.