TWI637504B - Pixel structure - Google Patents

Abstract

A pixel structure includes a data line, a gate line, an active element, a second organic semiconductor layer, and a pixel electrode. The gate and data lines are staggered. The active component is electrically connected to the data line and the gate line. The active device includes a source, a drain, a first organic semiconductor layer, and a gate. The source is electrically connected to the data line. The first organic semiconductor layer covers a source electrode and a drain electrode. The first organic semiconductor layer has a channel width direction between the source and the drain. The gate is disposed on the first organic semiconductor layer and is electrically connected to the gate line. The gate electrode protrudes from the first organic semiconductor layer along the channel width direction. The second organic semiconductor layer covers the data line and is connected to the first organic semiconductor layer. The pixel electrode is electrically connected to the drain electrode.

Description

Pixel structure

The invention relates to a pixel structure, in particular to a pixel structure of an organic display device.

With the progress of process technology, various types of display applications are constantly being updated. In response to the light, thin, short, small, and portable requirements of display applications, the next generation of display applications is trending toward portability. The thin-film transistors that are widely used in displays, the structure design or the choice of materials will directly affect the performance of the product.

Generally, a thin film transistor has at least components such as a gate, a source, a drain, and a channel layer. The conductivity of the channel layer can be changed by controlling the voltage of the gate to form a conduction between the source and the drain. (Open) or insulated (closed). However, due to the influence of process factors, the current characteristics near the edge of the channel near the thin film transistor and the middle of the channel may be different, so that the transfer characteristics at the edge of the thin film transistor will be triggered in advance, causing a hump phenomenon in the critical region, which will affect the thin film. Electrical properties of transistors.

The invention provides a pixel structure including a data line and a gate electrode. Line, active element, second organic semiconductor layer and pixel electrode. The gate and data lines are staggered. The active component is electrically connected to the data line and the gate line. The active device includes a source, a drain, a first organic semiconductor layer, and a gate. The source is electrically connected to the data line. The first organic semiconductor layer covers a source electrode and a drain electrode. The first organic semiconductor layer has a channel width direction between the source and the drain. The gate is disposed on the first organic semiconductor layer and is electrically connected to the gate line. The gate electrode protrudes from the first organic semiconductor layer along the channel width direction. The second organic semiconductor layer covers the data line and is connected to the first organic semiconductor layer. The pixel electrode is electrically connected to the drain electrode.

In one or more embodiments, there is a gap between the source and the drain. The gap has two opposite ends in the channel width direction. There is a stacking direction between the gate and the first organic semiconductor layer, and the gate overlaps at least one of the ends of the gap in the stacking direction.

In one or more embodiments, there is a gap between the source and the drain. The gap has two opposite ends in the channel width direction. The gate covers the end portion, and protrudes from the sidewall of the first organic semiconductor layer adjacent to the end portion along the channel width direction.

In one or more embodiments, the second organic semiconductor layer is in contact with the sidewall of the data line, and the first organic semiconductor layer is in contact with the sidewall of the source and the drain.

In one or more embodiments, there is a fringe electric field region between an end of one of the source and the drain and the other of the source and the drain. The gate electrode covers a fringe electric field region and protrudes from the first organic semiconductor layer.

In one or more embodiments, the source includes at least one first And a first connecting portion. The first connecting portion connects the data line and the at least one first strip-shaped portion. An included angle between the first connecting portion and the first strip portion is greater than 0 degrees. The gate electrode at least partially overlaps the first strip-shaped portion in the stacking direction, and does not overlap the first connection portion.

In one or more embodiments, the drain electrode includes two second strip portions and a second connection portion, the second connection portion connects the two second strip portions, and the two second strip portions alternate with the first strip portion. And the gate electrode at least partially overlaps with the two second strips in the stacking direction.

In one or more embodiments, the source includes at least one strip, the drain includes at least one strip, and there is a gap between the at least one strip of the source and the at least one strip of the drain, and the gate covers gap.

In one or more embodiments, the gate includes two first sub-gate portions and a second sub-gate portion. The second sub-gate part is connected to the first sub-gate part. The width of the first sub-gate portion is greater than the width of the second sub-gate portion. The first sub-gate portion overlaps with both ends of the stripe portion of the source and the both ends of the strip-like portion of the drain in the stacking direction, and the second sub-gate portion overlaps with the bar of the source in the stacking direction. The lip and the strip of the drain partially overlap.

In one or more embodiments, the first organic semiconductor layer further has a channel length direction between the stripe portion of the source electrode and the stripe portion of the drain electrode, and the gate electrode further protrudes from the stripe portion of the source electrode along the channel length direction. And the strip-like portion of the drain.

In one or more embodiments, the material of the first organic semiconductor layer includes pentacene, oligothiophene, phtalocyanine, carbon sixty or its derivative, and polyarylamine. (polyarylamine), polyfluorene, polythiophene, or a derivative thereof.

The present invention further provides a pixel structure including a substrate, a first patterned conductive layer, a patterned organic semiconductor layer, an insulating layer, a second patterned conductive layer, and a pixel electrode. The first patterned conductive layer is disposed on the substrate. The first patterned conductive layer includes a data line, a source, and a drain. The source is electrically connected to the data line. The patterned organic semiconductor layer covers the first patterned conductive layer. The patterned organic semiconductor layer has a channel width direction between the source and the drain. The insulating layer is disposed on the patterned organic semiconductor layer. The second patterned conductive layer is disposed on the patterned organic semiconductor layer and the insulating layer. The second patterned conductive layer includes a gate line and a gate electrode, the gate electrode is electrically connected to the gate line, and the gate electrode protrudes from the patterned organic semiconductor layer along the channel width direction. The pixel electrode is electrically connected to the drain electrode.

In one or more embodiments, there is a gap between the source and the drain. The gap has two opposite ends in the channel width direction. There is a stacking direction between the gate and the patterned organic semiconductor layer, and the gate overlaps at least one of the ends of the gap in the stacking direction.

In one or more embodiments, the patterned organic semiconductor layer is in contact with a sidewall of the data line, a sidewall of the source, and a sidewall of the drain.

In one or more embodiments, the source electrode includes at least a first strip portion and a first connection portion. The first connecting portion connects the data line and the at least one first strip-shaped portion. The drain electrode includes two second strip-shaped portions and a second connection portion. The second connecting portion connects the two second strip-shaped portions, and the two second strip-shaped portions and the first strip-shaped portions are alternately disposed. There is a space between the first strip-shaped portion and the two second strip-shaped portions. The gap has opposite ends. There is a stacking direction between the gate and the patterned organic semiconductor layer. The gate overlaps both ends in the stacking direction and protrudes from the sidewall of the patterned organic semiconductor layer.

In one or more embodiments, the source includes at least one strip. The drain electrode includes at least one strip, and there is a gap between the at least one strip of the source and the at least one strip of the drain, and the gate covers the gap. The gate includes a first sub-gate portion and a second sub-gate portion. The second sub-gate part is connected to the first sub-gate wide part. The width of the first sub-gate portion is greater than the width of the second sub-gate portion. The first sub-gate portion overlaps with both ends of the stripe portion of the source and the both ends of the strip-like portion of the drain in the stacking direction, and the second sub-gate portion overlaps with the bar of the source in the stacking direction. The lip and the strip of the drain partially overlap.

In one or more embodiments, the patterned organic semiconductor layer further has a channel length direction between the stripe portion of the source electrode and the stripe portion of the drain electrode. The gate electrode protrudes from the stripe portion of the source electrode and the stripe portion of the drain electrode along the length of the channel.

The pixel structure of the above embodiments can improve the electrical properties of the active device. Because the first organic semiconductor layer covers the source and the drain, and the second organic semiconductor layer covers the data line, the source, the drain, and the second organic semiconductor layer can be isolated from the external environment to prevent the device cavity from being contaminated. problem. In addition, since the gate protrudes from the first organic semiconductor layer in the channel width direction, the electric field control capability between the source and the end of the drain can be improved to modify the edge current, thereby improving the hump phenomenon.

12, 14, 16, 18, 22, 24, 26, 28, 32, 34, 36, 38‧‧‧ curves

100‧‧‧ pixel structure

110‧‧‧ substrate

120‧‧‧ the first patterned conductive layer

122‧‧‧ Data Line

124‧‧‧Source

122s, 124s, 126s, 132s

122t, 124t, 126t‧‧‧

124a, 124a‧‧‧ Strip

124b, 124b, 157‧‧‧ Connection

126‧‧‧ Drain

130‧‧‧Organic semiconductor layer

132‧‧‧first organic semiconductor layer

134‧‧‧Second organic semiconductor layer

140‧‧‧ Insulation

142, 144‧‧‧ organic dielectric layer

150‧‧‧ the second patterned conductive layer

152‧‧‧Gate line

154‧‧‧Gate

155‧‧‧The first sub-gate part

156‧‧‧Second Sub-Gate

160‧‧‧ flat layer

170‧‧‧pixel electrode

A-A, B-B‧‧‧ line segments

d1, d2‧‧‧ distance

Z‧‧‧ stacking direction

E‧‧‧ Fringe electric field region

Ga, Gb, 124c, 126c ‧‧‧ end

L‧‧‧ channel length direction

P‧‧‧Area

V‧‧‧through hole

T‧‧‧active element

W‧‧‧Channel width direction

W1, W2‧‧‧Width

θ1, θ2‧‧‧angle

FIGS. 1A to 4A are top views of the pixel structure manufacturing method according to the first embodiment of the present invention at each stage.

1B to 4B are cross-sectional views along lines A-A and B-B of FIGS. 1A to 4A, respectively.

Fig. 5 is an enlarged view of a region P in Fig. 4A.

FIG. 6 is a top view of an active element according to a second embodiment of the present invention.

FIG. 7 is a top view of an active element according to a third embodiment of the present invention.

FIG. 8 is a top view of an active element according to a fourth embodiment of the present invention.

FIG. 9 is a graph of the drain current-gate voltage of the active device in FIG. 8 under different drain driving voltages.

FIG. 10 and FIG. 11 are graphs of the drain current-gate voltage curves of the active device of the two comparative examples under different drain driving voltages.

In the following, a plurality of embodiments of the present invention will be disclosed graphically. For the sake of clarity, many practical details will be described in the following description. It should be understood, however, that these practical details should not be used to limit the invention. That is, in some embodiments of the present invention, these practical details are unnecessary. In addition, in order to simplify the drawings, some conventional structures and components will be shown in the drawings in a simple and schematic manner.

FIGS. 1A to 4A are top views of the manufacturing method of the pixel structure 100 according to the first embodiment of the present invention at each stage, and FIGS. 1B to 4B are respectively along the line AA and FIG. Sectional view of BB. Please refer to Figures 1A and 1B. A substrate 110 is provided. Material of the substrate 110 It can be glass, quartz, organic polymers, or other suitable materials. Next, a first patterned conductive layer 120 is formed on the substrate 110. The first patterned conductive layer 120 includes a data line 122, a source 124 and a drain 126. The data line 122 is electrically connected to the source electrode 124, and the drain electrode 126 is separated from the source electrode 124 by a gap G. In some embodiments, the first patterned conductive layer 120 may include a linear pattern having a fixed line width and a branch pattern connected to the linear pattern. The data line 122 may be formed by the linear pattern having a fixed line width. The source electrode 124 and the drain electrode 126 may be formed by a branch pattern. But not limited to this.

The material of the first patterned conductive layer 120 may be a metal material (for example, silver) or other conductive materials. Here, the manufacturing method of the first patterned conductive layer 120 may include forming a conductive material layer on the substrate 110 first, and then patterning the conductive material layer to form the first patterned conductive layer 120. The patterning step may include, for example, lithography and etching or laser ablation. In addition, the first patterned conductive layer 120 may directly form a solution containing metal particles on the substrate 110 by a direct-write printing method. In other embodiments, the substrate 110 may have a buffer layer (not shown), and the first patterned conductive layer 120 is fabricated on the buffer layer, and the buffer layer may reduce the roughness of the surface of the substrate 110.

Please refer to FIGS. 2A and 2B. An organic semiconductor layer 130 is formed to cover the first patterned conductive layer 120. In some embodiments, the organic semiconductor layer 130 completely covers the first patterned conductive layer 120. With such a structure, the first patterned conductive layer 120 can be isolated from the external environment, so the first patterned conductive layer 120 can be prevented from polluting the external environment (such as a device cavity) in a subsequent process. The manufacturing method of the organic semiconductor layer 130 may include Inkjet Printing Method, Soft Lithographic Printing Method, Photolithographic Patterning Method, Offset Printing Method, Spin-Coating Method, Blade Coating Blade coating method, dip coating method, curtain coating method, meniscus coating method, spray coating method or extrusion coating law. In some embodiments, the material of the organic semiconductor layer 130 may be pentacene, oligothiophene, phtalocyanine, carbon sixty or its derivative, polyarylamine, polyfluorene (polyfluorene), polythiophene, or a derivative thereof.

In this embodiment, the organic semiconductor layer 130 includes a first organic semiconductor layer 132 and a second organic semiconductor layer 134. In this embodiment, the first organic semiconductor layer 132 and the second organic semiconductor layer 134 are integrally formed. The first organic semiconductor layer 132 covers the source 124 and the drain 126, and the second organic semiconductor layer 134 covers the data line 122. Furthermore, the first organic semiconductor layer 132 contacts the sidewall 124s and the upper surface 124t of the source 124 and the sidewall 126s and the upper surface 126t of the drain 126, and the second organic semiconductor layer 134 contacts the sidewall 122s and the upper surface of the data line 122. 122t. It is worth noting that the region where the first organic semiconductor layer 132 is located between the source 124 and the drain 126 (please refer to the part of the gap G in FIG. 1B) is the channel region (not shown).

Please refer to FIGS. 3A and 3B. Form an insulating layer 140 is in the structure of FIG. 2A and FIG. 2B. In this embodiment, for example, two organic dielectric layers 142 and 144 may be formed. The organic dielectric layer 142 may be a low dielectric constant organic dielectric layer, and the organic dielectric layer 144 may be a high dielectric constant organic dielectric layer. In some embodiments, the material of the organic dielectric layer 142 may be polymethylmethacrylate (PMMA), polyisobutylene (PIB), polyethylene (PE), polypropylene (PP), polymer Polystyrene (PS), poly-4-vinylphenol (PVP), polyvinyl alcohol (PVA), or copolymers thereof. The material of the organic dielectric layer 144 may be parylene.

Next, a second patterned conductive layer 150 is formed on the insulating layer 140. The second patterned conductive layer 150 includes a gate line 152 and a gate 154. The gate line 152 is electrically connected to the gate 154. In some embodiments, the second patterned conductive layer 150 may include a linear pattern having a fixed line width and a branch pattern connected to the linear pattern. The gate line 152 may be formed by the linear pattern having a fixed line width. The gate electrode 154 may be formed by a branch pattern. But not limited to this.

The material of the second patterned conductive layer 150 may be a metal material (for example, gold) or other conductive materials. Here, the manufacturing method of the second patterned conductive layer 150 may include forming a conductive material layer on the insulating layer 140 first, and then patterning the conductive material layer to form the second patterned conductive layer 150. The step of forming the conductive material layer may include, for example, forming metal particles on the insulating layer 140 in a coating manner. The patterning step may include, for example, lithography and etching or laser ablation. In another embodiment, the second patterned conductive The layer 150 may be directly formed on the insulating layer 140 by a direct-write printing method using a solution containing metal particles.

Please refer to FIGS. 4A and 4B. A flat layer 160 is formed on the structures in FIGS. 3A and 3B. The material of the flat layer 160 may be the same as or different from the organic dielectric layers 142 and 144. Next, a pixel electrode 170 is formed on the flat layer 160 and is electrically connected to the drain electrode 126. For example, a through hole V may be formed in the flat layer 160, the organic dielectric layers 142 and 144, and the organic semiconductor layer 130, and then a conductive material layer is formed, and then the conductive material layer is patterned into the pixel electrode 170. In this way, the manufacturing process of the pixel structure 100 is completed.

Please refer to FIGS. 4A to 5 together, and FIG. 5 is an enlarged view of the region P in FIG. 4A. From a structural point of view, the pixel structure 100 includes a data line 122, a gate line 152, an active device T, a second organic semiconductor layer 134, and a pixel electrode 170. The gate lines 152 and the data lines 122 are staggered. The active device T is electrically connected to the data line 122 and the gate line 152. The active device T includes a source 124, a drain 126, a first organic semiconductor layer 132, and a gate 154. The source electrode 124 is electrically connected to the data line 122. The first organic semiconductor layer 132 covers the source 124 and the drain 126. The first organic semiconductor layer 132 has a channel width direction W between the source 124 and the drain 126. The gate electrode 154 is disposed on the first organic semiconductor layer 132 and is electrically connected to the gate line 152. The gate electrode 154 protrudes from the first organic semiconductor layer 132 along the channel width direction W. For example, in FIG. 5, the gate electrode 154 protrudes from the first organic semiconductor layer 132 by a distance d1, and the distance d1 may be about 5 micrometers, but the present invention is not limited thereto. The second organic semiconductor layer 134 covers the data line 122 and is connected to the first organic semiconductor. Layer 132. The pixel electrode 170 is electrically connected to the drain electrode 126.

The pixel structure 100 of this embodiment can improve the electrical properties of the active device T. Specifically, in the composition of the active device T, the source 124 and the drain 126 can be selected from silver to have a good electrical match with the organic semiconductor layer 130. However, because the silver electrode may pollute the device cavity, the organic semiconductor layer 130 may cover the silver material (as described above, the first organic semiconductor layer 132 covers the source 124 and the drain electrode 126 and the second organic semiconductor layer 134 Data line 122), to isolate silver from the external environment to prevent silver from polluting the environment. However, when the first organic semiconductor layer 132 covers the ends of the source 124 and the drain 126, fringe currents are generated between the source 124 and the end of the drain 126. These edge currents will cause a Hump phenomenon in the Id-Vg Curve of the active device T, which means that the drain current rises in stages in the Id-Vg curve, and Generate unnecessary current consumption. However, in this embodiment, since the gate electrode 154 protrudes from the first organic semiconductor layer 132 along the channel width direction W, the electric field control ability between the source 124 and the end of the drain electrode 126 can be improved to modify the edge current. To improve hump.

In this embodiment, the first patterned conductive layer 120, the organic semiconductor layer 130, the insulating layer 140, and the second patterned conductive layer 150 are sequentially formed and stacked along the stacking direction Z. In other words, the stacking direction Z may be a normal direction of the upper surface of the substrate 110. There is a gap G between the source 124 and the drain 126. The gap G has opposite end portions Ga and Gb in the channel width direction W. The gate electrode 154 overlaps at least one end portion Ga and Gb of the gap G in the stacking direction Z. For example, in FIG. 5, the gate electrode 154 and the two ends of the gap G in the stacking direction Z Both Ga and Gb overlap; in addition, the gate electrode 154 protrudes from the sidewall 132s of the first organic semiconductor layer 132 adjacent to Ga and Gb at both ends in the channel width direction W; therefore, the first over the Ga and Gb at both ends can be modified. Current near the organic semiconductor layer 132.

Please refer to Figure 4A and Figure 5. In this embodiment, the source electrode 124 includes at least one strip-shaped portion 124 a and a connection portion 124 b. The connecting portion 124b connects the data line 122 and at least one of the shaped portions 124a. There is an included angle θ1 between the connecting portion 124b and the strip portion 124a, and the included angle θ1 is greater than 0 degrees, for example, 90 degrees, that is, the connecting portion 124b and the strip portion 124a are perpendicular to each other, but the present invention is not limited thereto. In addition, the drain electrode 126 includes at least one strip-shaped portion 126 a and a connection portion 126 b. The connection portion 126b is connected to the pixel electrode 170 and at least one strip-shaped portion 126a. There is an included angle θ2 between the connecting portion 126b and the strip portion 126a, and the included angle θ2 is greater than 0 degrees, for example, 90 degrees, that is, the connecting portion 126b and the strip portion 126a are perpendicular to each other, but the present invention is not limited thereto.

Please refer to Figure 5. In this embodiment, the gate electrode 154 at least partially overlaps the strip-shaped portion 124 a of the source electrode 124 in the stacking direction Z (the direction of the paper exit surface in FIG. 5). For example, in FIG. 5, the gate electrode 154 and the strip-shaped portion The portion 124a partially overlaps and does not overlap the connection portion 124b. Furthermore, the gate electrode 154 also overlaps at least partially with the stripe portion 126a of the drain electrode 126 in the stacking direction Z. For example, in FIG. 5, the gate electrode 154 and the stripe portion 126a partially overlap with each other, and do not overlap with the connection portion 126b. Such a structure can not only increase the aperture ratio of the pixel structure 100, but because the gate 154 and the strips 124a and 126a partially overlap, it does not increase the gate-source (or the data line 122 in FIG. 4A) And gate line 152). In addition, the gate electrode 154 covers the gap G.

Please refer to FIG. 6, which is a top view of an active element T according to a second embodiment of the present invention. The difference between FIG. 6 and FIG. 5 is the shape of the gate electrode 154. In FIG. 6, the gate electrode 154 includes two first sub-gate portions 155 and a second sub-gate portion 156. The second sub-gate portion 156 is connected to the first sub-gate portion 155. For example, a second sub-gate portion 156 is located between the two first sub-gate portions 155. Therefore, the gate 154 is viewed from above (stacking direction Z). Watch as I-shaped. The width W1 of the first sub-gate portion 155 is larger than the width W2 of the second sub-gate portion 156; more specifically, the width W1 of the first sub-gate portion 155 along the length L of the channel is larger than the second sub-gate The portion 156 has a width W2 along the longitudinal direction L of the passage. The channel length direction L is the direction of the length of the first organic semiconductor layer 132 in the current (or electron flow) flow direction, and the channel width direction W is the direction perpendicular to the channel length direction L in the first organic semiconductor layer 132. . The first sub-gate portion 155 overlaps both end portions 124 c of the strip portion 124 a of the source 124 and both end portions 126 c of the strip portion 126 a of the drain electrode 126 in the stacking direction Z, and the second sub-gate portion 156 It partially overlaps the strip-shaped portion 124 a of the source electrode 124 and the strip-shaped portion 126 a of the drain electrode 126 in the stacking direction Z. From another perspective, there is a fringe electric field region E between an end portion 124c of the source 124 and an end 126c of the drain 126. The fringe electric field is a non-uniform electric field generated by the edge effect in a region near the edge of the conductor, and the fringe electric field region E is a region where a fringe electric field is generated between the source 124 and the drain 126. In this embodiment, the fringe electric field region E includes an end portion 124c of the source 124, an end 126c of the drain electrode 126, and a region therebetween. The gate electrode 157 covers the fringe electric field region E and protrudes from the first organic semiconductor layer 132. In this way, the first sub-gate portion 155 can improve the edge current effect between the source 124 and the drain 126, In addition, the second sub-gate portion 156 can increase the aperture ratio of the pixel structure 100 and reduce the parasitic capacitance between the gate and the source. Wherein, the two end portions 124c refer to the partial strip portions 124a of the opposite ends of the strip portion 124a of the source 124 along the channel width direction W, and the two end portions 126c refer to the strip portions 126a of the drain electrode 126 along the channel Part of the strip-shaped portion 126 a at opposite ends in the width direction W. In addition, the active device T may further include a connecting portion 157 to connect the first sub-gate portion 155 and the gate line 152 (as shown in FIG. 4A). As for other details of this embodiment, since they are the same as those in FIG. 5, they will not be described again.

Please refer to FIG. 7, which is a top view of an active element T according to a third embodiment of the present invention. The difference between FIG. 7 and FIG. 5 lies in the shape of the gate electrode 154. In FIG. 7, the gate electrode 154 protrudes further from the stripe portion 124 a of the source 124 and the stripe portion 126 a of the drain electrode 126 along the channel length direction L. In addition, the gate electrode 154 also protrudes from the first organic semiconductor layer 132 by a distance d2 along the channel length direction L. In other words, the gate electrode 154 protrudes from the first organic semiconductor layer 132 in both the channel length direction L and the channel width direction W. Therefore, the gate electrode 154 completely covers the stripe portion 124 a of the source 124 and the stripe portion 126 a of the drain electrode 126. Such a structure can also achieve the purpose of modifying the edge current. As for other details of this embodiment, since they are the same as those in FIG. 5, they will not be described again.

Please refer to FIG. 8, which is a top view of an active element T according to a fourth embodiment of the present invention. The difference between FIG. 8 and FIG. 5 lies in the shapes of the source 124 and the drain 126. In FIG. 8, the source electrode 124 includes at least a first strip-shaped portion 124 a and a first connection portion 124 b. The drain electrode 126 includes two second strip portions 126 a and a second connection portion 126 b. The second connecting portion 126b connects the two second strip portions 126a, and the two second strip portions 126a and the first strip portion 124a Alternately, for example, the first strip-shaped portions 124a are located between two second strip-shaped portions 126a, that is, the source electrode 124 and the drain electrode 126 form an interdigitated structure. The drain electrode 126 is separated from the source electrode 124 by a gap G. In this embodiment, the gate electrode 154 protrudes beyond the sidewall 132s of the first organic semiconductor layer 132 along the channel width direction W, that is, the gate electrode 154 covers both ends Ga and Gb of the gap G and protrudes beyond the first organic semiconductor. The layer 132 is a distance d1. In addition, the gate electrode 154 at least partially overlaps the first strip portion 124a of the source electrode 124 and the second strip portion 126a of the drain electrode 126 in the stacking direction Z. For example, in FIG. The shaped portion 124a, and partially overlaps the second strip shaped portion 126a. However, in other embodiments, the gate electrode 154 may completely overlap the first strip-shaped portion 124a and the second strip-shaped portion 126a. In addition, the active device T may further include a connecting portion 157 to connect the gate 154 and the gate line 152 (as shown in FIG. 4A). As for other details of this embodiment, since they are the same as those in FIG. 5, they will not be described again.

FIG. 9 is a graph of the drain current-gate voltage of the active device T in FIG. 8 under different drain driving voltages, and FIG. 10 and FIG. 11 are active devices in two comparative examples driven at different drains. Drain current vs. gate voltage curve at voltage. In FIG. 9, the gate electrode of the active device protrudes from the first organic semiconductor layer by a distance of about 5 micrometers in the channel width direction, and does not protrude beyond the first organic semiconductor layer in the channel length direction. The channel layer has a channel length of about 20 microns and a channel width of about 200 microns. The drain drive voltage of curve 12 is about -0.1 volts, the drain drive voltage of curve 14 is about -10.1 volts, the drain drive voltage of curve 16 is about -20.1 volts, and the drain drive voltage of curve 18 is about- 30.1 Volts. In addition, in FIG. 10, the gate of the active device does not protrude beyond the first organic half in the channel width direction and the channel length direction. Conductor layer. The channel layer has a channel length of about 20 microns and a channel width of about 200 microns. The drain drive voltage of curve 22 is about -0.1 volts, the drain drive voltage of curve 24 is about -10.1 volts, the drain drive voltage of curve 26 is about -20.1 volts, and the drain drive voltage of curve 28 is about- 30.1 Volts. It can be seen from FIGS. 9 and 10 that when the gate of the active device protrudes beyond the first organic semiconductor layer in the channel width direction, the drain current can be improved to eliminate the hump phenomenon.

In addition, in FIG. 11, the gate of the active device protrudes from the first organic semiconductor layer by a distance of about 5 micrometers in the channel length direction, and does not protrude beyond the first organic semiconductor layer in the channel width direction. The channel layer has a channel length of about 20 microns and a channel width of about 200 microns. The drain drive voltage of curve 32 is about -0.1 volts, the drain drive voltage of curve 34 is about -10.1 volts, the drain drive voltage of curve 36 is about -20.1 volts, and the drain drive voltage of curve 38 is about- 30.1 Volts. It can be seen from FIG. 11 that even if the gate of the active device protrudes beyond the first organic semiconductor layer in the channel length direction, the hump phenomenon still exists, and compared with FIG. 10, the hump phenomenon of FIG. 11 has not been improved. In addition, even if the distance that the gate protrudes from the first organic semiconductor layer in the channel length direction is increased to 17 micrometers, a hump phenomenon still exists. To sum up, the hump phenomenon can be improved by the design of the gate protruding beyond the first organic semiconductor layer in the channel width direction.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present invention. Therefore, the protection of the present invention The scope shall be determined by the scope of the attached patent application.

Claims (15)

A pixel structure includes: a data line; a gate line interleaved with the data line; an active element electrically connecting the data line and the gate line, the active element including: a drain; a source A first organic semiconductor layer covering the source and the drain, wherein the first organic semiconductor layer has a channel width direction between the source and the drain; and A gate electrode disposed on the first organic semiconductor layer and electrically connected to the gate line, wherein the gate electrode protrudes from the first organic semiconductor layer along the width direction of the channel; a second organic semiconductor layer, Covering the data line and connected to the first organic semiconductor layer; a flat layer disposed on the gate electrode; and a pixel electrode disposed on the flat layer and electrically connected to the drain electrode, wherein the source electrode Including at least one strip, the drain electrode includes at least one strip, the gap between the at least one strip of the source and the at least one strip of the drain, and the gate covers the gap, wherein the gate Pole with the first organic semiconductor There is a stacking direction between the layers, and the gate includes: two first sub-gate portions; and a second sub-gate portion connected to the first sub-gate portions, wherein each of the first sub-gate portions The width of the first sub-gate part is greater than the width of the second sub-gate part, and the first sub-gate part is in the stacking direction with two ends of the strip part of the source electrode and two of the strip part of the drain electrode. The ends overlap, and the second sub-gate portion partially overlaps the strip portion of the source electrode and the strip portion of the drain electrode in the stacking direction. The pixel structure of claim 1, wherein the gap has two opposite ends along the width direction of the channel, and the gate electrode overlaps at least one of the ends of the gap in the stacking direction. As in the pixel structure of claim 1, wherein the gap has two opposite ends along the width direction of the channel, the gate covers the ends, and protrudes along the width direction of the channel adjacent to the first ends adjacent to the ends. A sidewall of an organic semiconductor layer. The pixel structure of claim 1, wherein the second organic semiconductor layer is in contact with a sidewall of the data line, and the first organic semiconductor layer is in contact with a sidewall of the source and the drain. As in the pixel structure of claim 1, wherein there is a fringe electric field region between the ends of one of the source and the drain and the other of the source and the drain, the gate covers The fringe electric field region protrudes from the first organic semiconductor layer. As in the pixel structure of claim 1, wherein the source includes a first connection portion, the first connection portion connects the data line and the at least one first strip portion, wherein the first connection portion and the first strip portion There is an included angle between the sections that is greater than 0 degrees, wherein the gate electrode at least partially overlaps the first strip section in the stacking direction and does not overlap the first connection section. As in the pixel structure of claim 6, wherein the drain electrode includes two second strips and a second connection portion, the second connection portion connects the two second strips, and the two second strips and the The first strips are arranged alternately, and the gate electrode at least partially overlaps the two second strips in the stacking direction. As in the pixel structure of claim 1, wherein the first organic semiconductor layer further has a channel length direction between the first stripe portion of the source electrode and the second stripe portion of the drain electrode, the gate electrode Furthermore, the first strip-shaped portion of the source electrode and the second strip-shaped portion of the drain electrode protrude further along the length of the channel. The pixel structure of claim 1, wherein the material of the first organic semiconductor layer comprises pentacene, oligothiophene, phtalocyanine, carbon sixty or its derivative, polyarylamine ( polyarylamine), polyfluorene, polythiophene, or derivatives thereof. A pixel structure includes: a substrate; a first patterned conductive layer disposed on the substrate; the first patterned conductive layer includes a data line, a source, and a drain, wherein the source is electrically Connected to the data line; a patterned organic semiconductor layer covering the first patterned conductive layer, the patterned organic semiconductor layer covering the sidewalls of the source and the drain electrode, and a package along the extension direction of the data line Covering the sidewall of the data line, wherein the patterned organic semiconductor layer has a channel width direction between the source and the drain; an insulating layer is disposed on the patterned organic semiconductor layer; a second patterned conductive A layer disposed on the patterned organic semiconductor layer and the insulating layer, the second patterned conductive layer includes a gate line and a gate, the gate is electrically connected to the gate line, and the gate is along The channel width direction protrudes from the patterned organic semiconductor layer; a flat layer is disposed on the second patterned conductive layer; and a pixel electrode is disposed on the flat layer and is electrically connected to the drain electrode. The pixel structure of claim 10, wherein there is a gap between the source and the drain, the gap has two opposite ends along the width of the channel, and the gate and the patterned organic semiconductor layer have a gap. In a stacking direction, the gate electrode overlaps at least one of the ends of the gap in the stacking direction. The pixel structure of claim 10, wherein the patterned organic semiconductor layer is in contact with a sidewall of the data line, a sidewall of the source, and a sidewall of the drain, and the gate protrudes from the pattern along the width of the channel. The organic semiconductor layer protrudes at least 5 microns. The pixel structure of claim 10, wherein the source electrode includes at least a first strip-shaped portion and a first connection portion, and the first connection portion connects the data line with the at least one first strip-shaped portion; the drain electrode It includes two second strip-shaped portions and a second connection portion. The second connection portion is connected to the two second strip-shaped portions, and the two second strip-shaped portions and the first strip-shaped portion are alternately arranged; wherein the first There is a gap between the strip-shaped portion and the two second strip-shaped portions, the gap has opposite ends, the gate and the patterned organic semiconductor layer have a stacking direction, and the gate is in the stacking direction The upper portion overlaps the two end portions and protrudes from a sidewall of the patterned organic semiconductor layer. The pixel structure of claim 10, wherein the source includes at least one strip, the drain includes at least one strip, and between the at least one strip of the source and the at least one strip of the drain There is a gap; and the gate covers the gap, and the gate includes: two first sub-gate portions; and a second sub-gate portion connected to the first sub-gate portions, wherein each of the first The width of the sub-gate part is larger than the width of the second sub-gate part, and there is a stacking direction between the gate and the patterned organic semiconductor layer, and the first sub-gate part is in contact with the source in the stacking direction. Both end portions of the strip portion of the electrode and both end portions of the strip portion of the drain electrode overlap, and the second sub-gate portion is in the stacking direction with the strip portion and the drain portion of the source electrode. The stripe portions of the poles partially overlap. As in the pixel structure of claim 14, wherein the patterned organic semiconductor layer further has a channel length direction between the strip portion of the source electrode and the strip portion of the drain electrode, the gate electrode further extends along the channel. The length direction protrudes from the strip portion of the source electrode and the strip portion of the drain electrode.