TW201503340A - Electronic device and manufacturing method therefor and image display apparatus and substrate for constituting image display apparatus - Google Patents

Abstract

Provided is an electronic device configured or structured to not only hardly cause characteristic degradation due to patterning of the organic semiconductor material layer, but also able to achieve improved characteristics. The electronic device includes a first electrode 26 and a second electrode 27, a patterned organic semiconductor material layer 23, as well as a conductive altered region 30 extending from the organic semiconductor material layer 23, which is obtained by patterning and altering the organic semiconductor material constituting the organic semiconductor material layer 23, and at least a portion of an arbitrary pathway connecting the first electrode 26 and the second electrode 27 is not provided with the altered region 30.

Description

Electronic device and manufacturing method thereof, and image display device and substrate for constituting image display device [Related Application Cross Reference]

The present application claims the benefit of Japanese Priority Patent Application No. JP 2013-146464, filed on Jan.

The present invention relates to an electronic device and a method of fabricating the same, and an image display device and a substrate for forming an image display device.

At present, a field effect transistor (FET) including a thin film transistor (thin film transistor TFT) used in many electronic devices includes, for example, a gate electrode formed on a support member, and is formed to include the gate An SiO ₂ gate insulating layer on the support of the electrode and a channel forming region and a source/drain electrode formed on the gate insulating layer. In addition, extremely expensive semiconductor manufacturing apparatuses are generally used to produce field effect transistors having such a structure, and reduction in manufacturing cost has been strongly desired.

In such cases, recently, electronic devices using thin films of organic semiconductor materials have flourished, and among these devices, organic electronic devices such as organic transistors (in Hereinafter, it may be referred to simply as an organic device) has attracted attention. The ultimate goal of organic devices can be low cost, light weight, flexibility and high performance. Organic semiconductor materials have various advantages, such as: (1) high-area organic devices can be fabricated at low cost by a simple procedure at low temperatures; (2) flexible organic devices can be fabricated; And (3) controlling the efficacy and properties of the organic device by modifying the molecules constituting the organic material into a desired form.

Further, the film formation method by application such as a printing method has been gradually examined as a simple program at a low temperature. However, when a channel formation region containing one layer of an organic semiconductor material is formed by a film formation method or a film formation method by application, a problem such as an increase in leakage current until the organic semiconductor material layer is subjected to patterning may be caused. Further, as a patterning technique for avoiding such problems, for example, a laser stripping technique is known from JP 2011-249498 A.

[reference list] [Patent Literature]

[PTL 1]

JP 2011-249498 A

Now, studies conducted by the inventors have found that when the organic semiconductor material layer is subjected to patterning according to a laser stripping technique, the leakage current is also increased in the finally obtained organic transistor. Furthermore, exploration of this phenomenon has revealed that this phenomenon is caused by a conductive region formed in the organic semiconductor material layer.

Accordingly, it is desirable to provide an electronic device that is configured or structured to not only cause degradation of characteristics due to patterning of an organic semiconductor material layer, but also to achieve improved characteristics, and a method for fabricating the device, And an image display device and a substrate for forming an image display device.

According to an embodiment of the present invention, an electronic device includes a first electrode and a second electrode, a patterned organic semiconductor material layer, and a conductive metamorphic region extending from the organic semiconductor material layer, the conductive deterioration The region is obtained by patterning and modifying the organic semiconductor material constituting the organic semiconductor material layer, wherein at least a portion of any path connecting the first electrode and the second electrode does not have the modified region.

According to an embodiment of the present invention, there is provided a substrate for forming an image display device, the substrate having a two-dimensional matrix configuration along a first direction and a second direction, the plurality of embodiments according to an embodiment of the present invention Electronic devices.

According to an embodiment of the present invention, an image display apparatus including a substrate for constituting an image display device according to an embodiment of the present invention is provided.

According to a first aspect of the present invention, there is provided a method for fabricating an electronic device, the method comprising the steps of: forming a layer of an organic semiconductor material comprising an organic semiconductor material on a substrate body; and then patterning a layer of the organic semiconductor material; forming a first electrode and a second electrode on the organic semiconductor material layer; and then removing the organic semiconductor material layer along a second side and a fourth side of the organic semiconductor material layer a portion of the patterned organic semiconductor material layer in a direction parallel to the direction in which the first electrode and the second electrode extend is regarded as a first side and a third side, and is connected to the first side and The side of the third side is considered to be the second side and the fourth side.

According to a second aspect of the present invention, a method for fabricating an electronic device is provided, the method comprising the steps of forming at least a first electrode, a second electrode, and an organic semiconductor on a substrate body a layer of an organic semiconductor material; then patterning the layer of the organic semiconductor material; further forming a first side and a third side having a direction parallel to the first electrode and the second electrode extending and connecting the first a second semiconductor layer on one side and a third side and a layer of an organic semiconductor material on a fourth side; and then removing the organic semiconductor material layer along the second side and the fourth side of the organic semiconductor material layer Part of it.

According to the present invention, since at least a portion of any path connecting one of the first electrode and the second electrode does not have a metamorphic region, the leakage current can be reduced without any current path generated by the short circuit, and the electronic device is hardly caused. The characteristics are degraded. On the other hand, due to the electrically conductive metamorphic region of the deteriorated organic semiconductor material, it becomes possible to achieve improved characteristics of the electronic device such as, for example, an increase in one of the on-state currents and a decrease in one of the contact resistances. It should be noted that the advantageous effects set forth in this specification by way of example are not to be considered as limiting, but may have additional advantageous effects.

10‧‧‧Base body

11‧‧‧ glass substrate

12‧‧‧Insulation film

21‧‧‧Control electrode / gate electrode

22‧‧‧Insulation/gate insulation

23‧‧‧Organic semiconductor material layer

23’‧‧‧ Section

23 ₁ ‧‧‧First side

23 ₂ ‧‧‧ second side

23 ₃ ‧‧‧ third side

23 ₄ ‧‧‧ fourth side

24‧‧‧Channel formation area

25‧‧‧Channel forming zone extensions

26‧‧‧First electrode/electrode

27‧‧‧Second electrode/electrode

28‧‧‧ Passivation film

28’‧‧‧mask layer

29‧‧‧Separated parts/separation grooves

30‧‧‧metamorphic zone/conducting metamorphic zone

30 ₁ ‧‧‧First District

30 ₂ ‧‧‧Second District

31‧‧‧Extensions

1A, 1B, and 1C are schematic diagrams each showing a configuration of an organic semiconductor material layer or the like of an electronic device according to Example 1, and a schematic partial cross-sectional view along one of arrows BB of FIG. 1A. And a schematic partial cross-sectional view along one of the arrows CC of FIG. 1A.

2A and 2B are respectively a schematic view showing a configuration of an organic semiconductor material layer or the like according to a modified example of one of the electronic devices of Example 1, and a schematic partial cross section along one of arrows BB of FIG. 2A. Figure 2C is a schematic partial cross-sectional view of one of the electronic devices according to Example 2, as in the case of arrow BB of Figure 1A.

3] FIG. 3A is a schematic partial cross-sectional view for explaining a method of manufacturing one of the electronic devices according to Example 1 as in the case of arrow BB of FIG. 1A, and a schematic partial sectional view, and FIG. 3B And FIG. 3C is a schematic partial cross-sectional view, after FIG. 3A, for explaining a method for manufacturing one of the electronic devices according to Example 1, as in the case of the arrow BB of FIG. 1A, and the like, and A schematic diagram illustrating one of the configurations of an organic semiconductor material layer or the like.

4A and 4B are diagrams for explaining the method for manufacturing one of the electronic devices according to Example 1 as in the case of the arrow B-B of FIG. 1A, after FIG. 3B and FIG. 3C. A schematic partial cross-sectional view of a main body and the like, and a schematic diagram illustrating a configuration of an organic semiconductor material layer or the like.

5] FIG. 5A is a schematic diagram illustrating the configuration of an organic semiconductor material layer or the like for explaining a method for manufacturing an electronic device according to Example 1 after FIG. 4B, and FIG. 5B is after FIG. 4B. A schematic diagram for explaining a configuration of an organic semiconductor material layer or the like for manufacturing another method of the electronic device according to Example 1.

6A, 6B, and 6C are schematic diagrams each showing a configuration of an organic semiconductor material layer or the like of an electronic device according to Example 3, and a schematic partial cross-sectional view along one of arrows BB of FIG. 6A. And a schematic partial cross-sectional view along one of the arrows CC of FIG. 6A.

7] FIG. 7A and FIG. 7B are respectively schematic partial cross-sectional views of a modified example of an electronic device according to Example 3 in the case of arrows BB and CC of FIG. 6A, and FIG. 7C is as follows. A schematic partial cross-sectional view of one of the electronic devices according to Example 4 in the case of arrow BB of Figure 6A.

8] FIG. 8A and FIG. 8B are schematic partial cross-sectional views for explaining a substrate body or the like as in the case of the method of manufacturing an electronic device according to Example 3 as in the case of arrow B-B of FIG. 6A.

9A and 9B are schematic diagrams for explaining one of the substrate bodies and the like as in the case of the arrow BB of FIG. 6A, for the method for manufacturing one of the electronic devices according to Example 3, after FIG. 8B. A partial cross-sectional view, and a schematic diagram illustrating the configuration of an organic semiconductor material layer or the like.

10] FIG. 10A is a schematic diagram illustrating the configuration of an organic semiconductor material layer for explaining a method for fabricating an electronic device according to Example 3, and FIG. 10B is used after FIG. 9B. A schematic diagram illustrating one configuration of an organic semiconductor material layer for illustrating another method for fabricating an electronic device according to Example 3.

11] FIG. 11A, FIG. 11B, and FIG. 11C respectively illustrate an electric power according to Example 5. A schematic diagram of one of the configurations of an organic semiconductor material or the like of the sub-device, a schematic partial cross-sectional view along one of arrows B-B of FIG. 11A and a schematic partial cross-sectional view along arrow C-C of FIG. 11A.

12] FIG. 12A and FIG. 12B are respectively schematic partial cross-sectional views of a modified example of an electronic device according to Example 5 in the case of arrows BB and CC of FIG. 11A, and FIG. 12C is as follows. A schematic partial cross-sectional view of one of the electronic devices according to Example 6 in the case of arrow BB of Fig. 11A.

13] FIG. 13A is a schematic partial cross-sectional view for explaining a method of manufacturing one of the electronic devices according to Example 5 as in the case of arrow BB of FIG. 11A, and a schematic partial sectional view, and FIG. 13B And FIG. 13C is a schematic partial cross-sectional view, after FIG. 13A, for explaining a method for manufacturing one of the electronic devices according to Example 5, as in the case of the arrow BB of FIG. 11A, and the like, and A schematic diagram illustrating the configuration of an organic semiconductor material layer or the like.

[ Fig. 14] Fig. 14A is a schematic view for explaining the configuration of an organic semiconductor material layer or the like for manufacturing a method of an electronic device according to Example 5, after Fig. 13C, and Fig. 14B is used after explanation for Fig. 13C for explanation A schematic diagram of one of the configurations of an organic semiconductor material layer or the like for manufacturing another method of the electronic device according to Example 5.

15A, 15B and 15C are respectively schematic views showing a configuration of an organic semiconductor material layer or the like of an electronic device according to Example 7, a schematic partial cross-sectional view along one of arrows BB of FIG. 15A, and A schematic partial cross-sectional view along one of the arrows CC of Figure 15A.

16] FIG. 16A and FIG. 16B are respectively schematic partial cross-sectional views of a modified example of an electronic device according to Example 7 in the case of arrows BB and CC of FIG. 15A, and FIG. 16C is as follows. A schematic partial cross-sectional view of one of the electronic devices according to Example 8 in the case of arrow BB of Fig. 15A.

17] FIG. 17A is a diagram for explaining a method for manufacturing an electronic device according to Example 7. A schematic partial cross-sectional view of one of the substrate bodies and the like as in the case of arrow BB of FIG. 15A, and FIGS. 17B and 17C are respectively after FIG. 17A for explaining the electrons for manufacturing according to Example 7. One of the devices is a schematic partial cross-sectional view of a substrate body or the like in the case of the arrow BB of FIG. 15A and a schematic diagram illustrating a configuration of an organic semiconductor material layer or the like.

18] Fig. 18A is a schematic view showing a configuration of an organic semiconductor material layer or the like for manufacturing a method of manufacturing an electronic device according to Example 7 after Fig. 17C, and Fig. 18B is for explaining after Fig. 17C. A schematic diagram of one of the configurations of an organic semiconductor material layer or the like for manufacturing another method of the electronic device according to Example 7.

19A and 19B are schematic partial cross-sectional views of a double-ended electronic device according to Example 9.

20A and 20B are respectively schematic views illustrating a configuration of an organic semiconductor material layer or the like according to a modified example of one of the electronic devices of Example 1.

21 is a schematic diagram showing a configuration of an organic semiconductor material layer or the like according to a modified example of the electronic device of Example 1 after FIG. 20B.

22] Fig. 22 is a graph showing the results of evaluating the V-I characteristics of the electronic device according to Example 1, Comparative Example 1A, and Comparative Example 1B.

The following is a description of one embodiment of the invention with reference to the accompanying drawings. However, the invention is not limited to the embodiments, and the various values and materials in the embodiments are merely examples. It will be explained in the following order.

1. A general description of an electronic device and a method of fabricating the same, and an image display device and a substrate for forming an image display device in accordance with an embodiment of the present invention.

2. Example 1 (Electrical device and a method of fabricating the same according to an embodiment of the present invention, a first bottom gate/top contact type electronic device according to an embodiment of the present invention, and an image display device and an image display One of the devices)

3. Example 2 (Modification of Example 1, Second Bottom Gate/Top Contact Type Electronics)

4. Example 3 (Another Modification of Example 1, First Bottom Gate/Bottom Contact Type Electronics)

5. Example 4 (Modification of Example 3, Second Bottom Gate/Top Contact Type Electronics)

6. Example 5 (Another Modification of Example 1, First Top Gate/Bottom Contact Type Electronics)

7. Example 6 (Modification of Example 5, Second Top Gate/Bottom Contact Type Electronics)

8. Example 7 (Another Modification of Example 1, First Top Gate/Top Contact Type Electronics)

9. Example 8 (Modification of Example 7, Second Top Gate/Top Contact Type Electronics)

10. Example 9 (further modified example of Example 1, double-ended electronic device), other items [electronic device and method of manufacturing the same according to embodiments of the present invention, and image display device and substrate for constituting the image display device General explanation]

An electronic device according to an embodiment of the present invention may have a form of a layer of an organic semiconductor material, wherein a first side and a third side are parallel to one of the first electrode and the second electrode extending, and a second side and a The fourth side is connected to the first side and the third side, and one of the first regions of the one metamorphic region is in contact with the first side of the organic semiconductor material layer, and the second region of one of the metamorphic regions is combined with the organic semiconductor material layer The third side contacts, along the second side and the fourth side of the organic semiconductor material layer, without any metamorphic regions.

An electronic device (which includes a preferred form) according to an embodiment of the present invention is a so-called double-ended electronic device. However, the electronic device according to an embodiment of the present invention is not limited to this form, but may have a form further including a control electrode. More specifically, in this shape The electronic device is a so-called three-terminal electronic device.

In the following description, in some cases, an electronic device manufactured according to an embodiment of the present invention, an electronic device manufactured by the method for manufacturing an electronic device according to the first aspect and the second aspect of the present invention, Among the electronic devices constituting the image display device according to an embodiment of the present invention and the electronic device for constituting the substrate of the image display device according to an embodiment of the present invention, the three-terminal electronic device may be collectively referred to as "according to the present invention. A three-terminal electronic device of one embodiment and the like.

Another option is a three-terminal electronic device according to an embodiment of the invention and the like, which can be a bottom gate/top contact type electronic device, and in particular, further comprising an insulating layer in the form of a form a control electrode on a substrate body having an insulating layer formed on the control electrode and the substrate body, having an organic semiconductor material layer formed on the insulating layer, and having first and second layers formed on the organic semiconductor material layer electrode. It should be noted that in some cases, for convenience, a three-terminal electronic device and the like in accordance with an embodiment of the present invention may be referred to as a "first bottom gate/top contact electronic device." Further, in this case, the device may have a form in which the first electrode is in contact with the first region of the metamorphic region and the second electrode is in contact with the second region of the metamorphic region.

Another option is a three-terminal electronic device according to an embodiment of the invention and such a bottom gate/bottom contact type electronic device, and in particular, further comprising an insulating layer in the form of a form The control electrode on a substrate body has an insulating layer formed on the control electrode and the substrate body, and has an organic semiconductor material layer formed on the insulating layer, a first region of the metamorphic region, and a second region of the metamorphic region, and has a formation a first electrode on the first region of the metamorphic region, and a second electrode having a second region formed on the metamorphic region. It should be noted that in some cases, three-terminal electronic devices and the like in accordance with an embodiment of the present invention in this form may be referred to as "second bottom gate/top contact electronics" for convenience. The use of this structure provides a shorter channel.

A three-terminal electronic device according to an embodiment of the present invention and the like can be a bottom gate a pole/bottom contact type electronic device, and in particular, further comprising a form of an insulating layer having a control electrode formed on a substrate body, the insulating layer formed on the control electrode and the substrate body a layer having first and second electrodes formed on the insulating layer and having an organic semiconductor material layer formed on the self-insulating layer to the first and second electrodes between the first and second electrodes . It should be noted that in some cases, for convenience, a three-terminal electronic device and the like in accordance with an embodiment of the present invention may be referred to as a "first bottom gate/bottom contact electronic device." Further, in this case, the device may have a form in which the first electrode is in contact with the first region of the metamorphic region and the second electrode is in contact with the second region of the metamorphic region.

Another option is a three-terminal electronic device according to an embodiment of the invention and such a bottom gate/bottom contact type electronic device, and in particular, further comprising an insulating layer in the form of a form a control electrode on a substrate body having an insulating layer formed on the control electrode and the substrate body, having first and second electrodes formed on the insulating layer, having the first and second layers formed on the insulating layer The organic semiconductor material layer between the two electrodes has a first region formed from the insulating layer to form a metamorphic region above the first electrode, and has a second region formed on the insulating layer to a metamorphic region above the second electrode. It should be noted that in some cases, for convenience, a three-terminal electronic device in accordance with an embodiment of the present invention and the like may be referred to as a "second bottom gate/bottom contact electronic device." The use of this structure provides a shorter channel.

Another option is a three-terminal electronic device according to an embodiment of the invention and the like, which can be a top gate/bottom contact type electronic device, and in particular, further comprising an insulating layer in the form of a form The first and second electrodes on a substrate body have an organic semiconductor material layer formed from the substrate body to be formed between the first and second electrodes over the first and second electrodes, and formed on the organic semiconductor material An insulating layer on the layer and a control electrode formed on the insulating layer. It should be noted that in some cases, for convenience, a three-terminal electronic device in accordance with an embodiment of the present invention and such as this The class can be referred to as "first top gate/bottom contact electronics." Further, in this case, the device may have a form in which the first electrode is in contact with the first region of the metamorphic region and the second electrode is in contact with the second region of the metamorphic region.

Another option is a three-terminal electronic device according to an embodiment of the invention and the like, which can be a top gate/bottom contact type electronic device, and in particular, further comprising an insulating layer in the form of a form The first and second electrodes on a substrate body have an organic semiconductor material layer formed on the substrate body between the first and second electrodes, having a metamorphic region formed from the substrate body to the first electrode a region having a second region formed from the substrate body to the metamorphic region above the second electrode, having an insulating layer formed on the organic semiconductor material layer, the first region of the metamorphic region, and the second region of the metamorphic region, and having A control electrode formed on the insulating layer. It should be noted that in some cases, for convenience, a three-terminal electronic device and the like in accordance with an embodiment of the present invention may be referred to as a "second top gate/bottom contact electronic device." The use of this structure provides a shorter channel.

Another option is a three-terminal electronic device according to an embodiment of the invention and the like, which can be a top gate/top contact type electronic device, and in particular, further comprising an insulating layer in the form of a form The organic semiconductor material layer on a substrate body has first and second electrodes formed on the organic semiconductor material layer, and has an insulating layer formed on the first and second electrodes and the organic semiconductor material layer, and has an Control electrode on the insulating layer. It should be noted that in some cases, for convenience, a three-terminal electronic device and the like in accordance with an embodiment of the present invention may be referred to as a "first top gate/top contact electronic device." Further, in this case, the device may have a form in which the first electrode is in contact with the first region of the metamorphic region and the second electrode is in contact with the second region of the metamorphic region.

Another option is a three-terminal electronic device according to an embodiment of the invention and the like, which can be a top gate/top contact type electronic device, and in particular, further comprising an insulating layer in the form of a form Organic semiconductor material on a substrate body a material layer, a first region of the metamorphic region and a second region of the metamorphic region, having a first electrode formed on the first region of the metamorphic region, and having a second electrode formed on the second region of the metamorphic region, having An insulating layer formed on the first and second electrodes, the organic semiconductor material layer, the first region of the modified region, and the second region of the modified region, and has a control electrode formed on the insulating layer. It should be noted that in some cases, for convenience, a three-terminal electronic device and the like in accordance with an embodiment of the present invention may be referred to as a "second top gate/top contact electronic device." The use of this structure provides a shorter channel.

A three-terminal electronic device according to an embodiment of the present invention, including the preferred forms of the various types described above, and the like may comprise a thin film transistor having a form further comprising an insulating layer for forming a gate electrode. a control electrode, an insulating layer for forming a gate insulating layer, first and second electrodes for constituting the source/drain electrodes, and between the first and second electrodes for forming a channel forming region Layer of organic semiconductor material.

A substrate (backplane) constituting an image display device according to an embodiment of the present invention, comprising a plurality of electronic devices according to an embodiment of the present invention, may have a plurality of electrons disposed therein along a first direction a control electrode of the device is connected to the gate wiring extending along the first direction, and a first or second electrode for the plurality of electronic devices arranged along a second direction is connected to the signal wiring extending along the second direction Form.

An electronic device according to an embodiment of the present invention, comprising the various types of preferred forms described above, which are manufactured by the method for fabricating an electronic device according to the first aspect or the second aspect of the present invention Electronic device (including the preferred forms of the various forms described above) for forming an electronic device (including various types of preferred forms as set forth above) of an image display device in accordance with an embodiment of the present invention, and The electronic device (including the various types of preferred forms described above) constituting the substrate of the image display device according to an embodiment of the present invention may be hereinafter collectively referred to as "one of the present invention" Electronic devices of the embodiments and the like.

In an electronic device and the like according to an embodiment of the present invention, the difference between the metamorphic region and the organic semiconductor material layer is that the metamorphic region has a higher conductivity than the organic semiconductor material layer. In a selection system, the difference between the metamorphic region and the organic semiconductor material layer is that the crystal structure of the metamorphic region is different from the crystal structure of the organic semiconductor material layer. The crystal structure of the metamorphic region is more amorphous than the crystal structure of the organic semiconductor material layer. The crystal structure can be examined by performing X-ray diffraction (XRD analysis), and the surface roughness of the difference metamorphic region between the metamorphic region and the organic semiconductor material layer is different from the surface roughness of the organic semiconductor material layer. The surface roughness of the metamorphic region is greater than the surface roughness of the organic semiconductor material layer. Alternatively, the difference between the metamorphic zone and the layer of organic semiconductor material is one of the differences in state of charge, and the metamorphic zone is less likely to be charged than the layer of organic semiconductor material. The state of charge can be assessed by, for example, scanning electron microscope observation.

When the organic semiconductor material layer is subjected to patterning by a laser stripping method, or subjected to patterning by a dry etching method or a wet etching, or subjected to a plasma treatment, the metamorphic region depends on the treatment. Conditions are formed in an outer edge region of one of the patterned organic semiconductor material layers. Furthermore, the metamorphic zone can be by, for example, by means of a physical removal method using one needle or the like, one of the laser stripping methods under optimized conditions or a dry etching method or a wet etching method Partially removed.

Examples of laser light for irradiating an organic semiconductor material layer to obtain a patterned organic semiconductor material layer may include, for example, a 248 nm wavelength laser light emitted from a KrF excimer laser, emitted from a YAG laser. One of the fourth harmonic of the 1064 nm laser light (266 nm) and the 308 nm wavelength of the laser emitted from a XeCl excimer laser. The irradiation energy and the irradiation time of the laser light for irradiating the organic semiconductor material layer can be appropriately determined by performing various types of tests. An example of a method for irradiating laser light may include one of irradiating a light shielding mask over one of the layers of the organic semiconductor material while irradiating the organic semiconductor material layer with laser light, or by way of example, such as an organic semiconductor One of the material layers is patterned by irradiating one of the layers of the organic semiconductor material with laser light. Such The method can suitably select a region of the organic semiconductor material layer irradiated with laser light. It should be noted that, by way of example, a glass plate, a quartz plate, a plastic film, a plastic plate, a metal plate or a sheet formed to transmit a portion of the laser light and formed to shield the laser light Such as can be used as a laser light shielding mask in the former method. For a region for shielding laser light, a metal film such as, for example, chromium (Cr) may be formed. In addition, examples of the latter method may specifically include a method of irradiating a layer of an organic semiconductor material with a laser beam when the beam is sequentially stepped (more specifically, a substrate body or a support is placed thereon repeatedly) One of the methods of irradiating a layer of an organic semiconductor material with a laser beam by two-dimensional scanning in combination with a so-called raster scanning method or a so-called vector scanning method when the predetermined distance of one of the stages is moved and stopped.

In an electronic device and the like according to an embodiment of the present invention, a control electrode, a first electrode, a second electrode, a gate electrode, and a source/drain electrode are formed (hereinafter, in some cases, it may be Materials collectively referred to as "control electrodes, etc." may include conductive materials such as, for example, platinum (Pt), gold (Au), palladium (Pd), chromium (Cr), molybdenum (Mo), nickel (Ni), Aluminum (Al), silver (Ag), tantalum (Ta), tungsten (W), copper (Cu), titanium (Ti), indium (In), tin (Sn), iron (Fe), cobalt (Co), a metal of zinc (Zn), magnesium (Mg), manganese (Mn), rhenium (Rh), rhodium (Rb) or an alloy containing the metal elements, conductive particles containing the metals, and alloys containing the metals Conductive particles, ITO, and polycrystalline germanium containing impurities, and a laminate structure having a layer containing such elements (for example, MoOx/Au, CuO/Au) may also be used. Further, the material for constituting the control electrode or the like may also contain an organic material (conductive polymer) such as poly(3,4-ethylenedioxythiophene)/polysulfonic acid styrene [PEDOT/PSS], TTF-TCNQ, and poly aniline. The materials constituting the control electrode, the first electrode, the second electrode, the gate electrode, and the source/drain electrodes may be the same material or different materials.

The method for forming the control electrode or the like may include various types of application methods, physical vapor deposition (PVD), pulsed laser deposition (PLD), and arc discharge method, which are described later, depending on materials used to constitute the electrodes. Various types of chemical vapor phases including MOCVD a deposition (CVD), a lift-off method, a shadow mask method, and a plating method (such as an electrolytic plating method, an electrodeless plating method, or a combination thereof), each of which is combined with a patterning technique (if necessary) and includes by using an ink Or a variety of application methods of a paste. In addition, the PVD may comprise: (a) various types of vacuum deposition methods, such as electron beam heating methods, resistance heating methods, flash evaporation deposition and heating enthalpy methods; (b) plasma vapor deposition; (c) various types Sputtering methods, such as a diode sputtering method, a DC sputtering method, a DC magnetron sputtering method, a high frequency sputtering method, a magnetron sputtering method, an ion beam sputtering method, and a bias sputtering method; d) various types of ion plating methods, such as a DC (direct current) method, an RF method, a multi-cathode method, an active reaction method, an electric field deposition method, a high-frequency ion plating method, and a reactive ion plating method. In the case of forming a resist pattern, for example, a resist material is applied to form a resist layer, and the resist layer is then subjected to a laser lithography technique using a laser lithography technique. Patterning is performed by electron beam rendering techniques, an X-ray rendering technique, or the like. A resist pattern can be formed by using a resist transfer method or the like. In the case of forming a control electrode or the like according to an etching method, a dry etching method or a wet etching method may be employed, and the dry etching method may include, for example, ion milling and reactive ion etching (RIE). Further, the control electrode or the like may be formed according to a laser stripping method, a mask vapor deposition method, a laser transfer method, or the like.

In an electronic device and the like according to an embodiment of the present invention, an insulating layer or a gate insulating layer (hereinafter, may be collectively referred to as "insulating layer and the like" in some cases) may be a single layer or more. Layers. Materials for constituting the insulating layer and the like may include an inorganic insulating material and an organic insulating material. The inorganic insulating material may comprise a high dielectric insulating material of a metal oxide such as a cerium oxide-based material, cerium nitride (SiN _Y ), aluminum oxide (Al ₂ O ₃ ), titanium oxide, and HfO ₂ . In addition, the organic insulating material may comprise an organic insulating material such as exemplified by an organic insulating material (organic polymer), for example, poly(methyl methacrylate) (PMMA), poly(vinylphenol) (PVP), poly Vinyl alcohol (PVA), polyimide, polycarbonate (PC), polyethylene terephthalate (PET), polystyrene, sterol derivatives (decane coupling agent) (such as N-2 (amine) Benzyl) 3-aminopropyltrimethoxydecane (AEAPTMS), 3-mercaptopropyltrimethoxydecane (MPTMS) and octadecyltrichlorodecane (OTS)) and a thyristor at one end thereof The pole electrode is connected to a linear hydrocarbon of one of the functional groups (such as octadecyl thiolate or dodecyl isocyanate) and combinations thereof. Examples of the material based on cerium oxide may include cerium oxide (SiO _X ), BPSG, PSG, BSG, AsSG, PbSG, cerium oxynitride (SiON), SOG (spin-on glass), and SiO ₂ based on low dielectric constant. Materials (for example, polyaryl ether, cyclic perfluorinated polymer and benzocyclobutene, cyclic fluoride resin, polytetrafluoroethylene, aryl ether fluoride, polyfluorene fluoride, amorphous carbon And organic SOG). In addition, the method for forming an insulating layer and the like may include various types of PVD and CVD mentioned above, a sol-gel method, a peeling method, a shadow mask method, and the like, in addition to the application methods mentioned below. Electrodeposition methods (each of which is combined with a patterning technique, if desired), and patterning can be carried out according to a laser stripping method, or patterning can be carried out by using a light-sensitive material through exposure to light and developing .

The application method herein may include: respective types of printing methods, such as a screen printing method, an inkjet printing method, a lithography method, a reverse lithography method, a gravure printing method, a gravure lithography method, a letterpress printing, a flexographic printing, and Microcontact printing; spin coating method; various types of coating methods, such as pneumatic blade coater method, blade coater method, bar coater method, knife coater method, extrusion coater Method, reverse roll coater method, transfer roll coater method, gravure coater method, staple coater method, cast coater method, spray coat method, slit coater method , slit orifice coater method, CAP coating method, calender coater method, casting method, capillary coater method, bar coater method and dipping method; spraying method; by using a dispenser And a method of applying a liquid material, such as a stamping method.

In an electronic device and the like according to an embodiment of the present invention, examples of the organic semiconductor material may include polythiophene and a derivative thereof (poly-3-ethanethiophene [P3HT] in which an ethane group-containing polythiophene is introduced] , pentacene [2,3,6,7-dibenzopyrene], a derivative of pentacene [for example, TIPS (triisopropyldecylethynyl)-pentacene], containing 6,12 - a dioxin-embedded bismuth-doped ruthenium compound (so-called 呫 呫 呫 呫, 6,12-dioxane, which may be referred to as "PXX" in some cases), Bismuth, fused tetraphenyl, hexacene, naphthacene, dibenzopentabenzene, tetrabenzopentabenzene, , antimony, bismuth, triphenylene, benzene, tetraphenylene, tricam, benzopyrene, dibenzopyrene, triphenylene, polypyrrole and its derivatives, polyaniline and its derivatives, Polyacetylene, polydiacetylene, polyfluorene, polyphenylene, polyfuran, polyfluorene, polyvinyl carbazole, polyselenophene, polybenzazole, isothioanisone (such as polyisothianaphthene), thiophene extended vinyl (such as poly(thiophene-extended vinyl)), polycarbazole, polyphenylene sulfide, polystyrene, polyphenylene sulfide, polyethylene sulfide, poly(thinylthiophene), polynaphthalene, polyfluorene, Polyphthalide, indigo, berberine, hemicyanin, polyethylene dioxythiophene, pyridazine, naphthalene tetradecyldiimide, poly(3,4-ethylene II) Oxythiophene)/polysulfonic acid styrene [PEDOT/PSS] and quinophthalone. Alternatively, an example of an organic semiconductor material may comprise a compound selected from the group consisting of fused polycyclic aromatic compounds, porphyrin derivatives, phenylvinylidene-based conjugated oligomers, and based on Conjugated oligomer of thiophene. In particular, examples may include, for example, fused polycyclic aromatic compounds such as acene molecules (eg, pentacene, fused tetraphenyl), porphyrin molecules, and conjugated oligomers (phenyl vinylene) And thiophene).

Alternatively, examples of organic semiconductor materials may include, for example, porphyrin, 4,4'-biphenyldithiol (BPDT), 4,4'-diisocyanobiphenyl, 4,4' -diisocyano-p-triphenyl, 2,5-bis(5'-thioethenyl-2'-phenylthio)thiophene, 2,5-bis(5'-thioethenyl-2'-benzene Thio)thiophene, 4,4'-diisocyanobenzene, benzidine (biphenyl-4,4'-diamine), TCNQ (tetracyanoquinodimethane), tetrathiafulte (TTF)-TCNQ The complex is represented by a charge transfer complex, a double ethylene tetrathiofulcene (BEDTTTF)-perchloric acid complex, a BEDTTTF iodine complex, and a TCNQ iodine complex, biphenyl-4,4'-dicarboxylic acid, 1,4 -bis(4-phenylthioethynyl)-2-ethyl Benzene, 1,4-bis(4-isocyanophenylethynyl)-2-ethylbenzene, dendrimers, fullerenes (such as C60, C70, C76, C78 and C84), 1,4-two ( 4-phenylthioethynyl 1)-2-ethylbenzene, 2,2"-bishydroxy-1,1':4',1"-triphenyl, 4,4'-biphenyldiethane, 4, 4'-biphenyl diol, 4,4'-biphenyl diisocyanate, 1,4-diethyl benzene, diethylbenzene-4,4'-dicarboxylic acid, benzo[1,2 -c;3,4-c';5,6-c"]tris[1,2]dithiol-1,4,7-trisulfuronic acid, α-hexathiophene, tetrathiol fused tetraphenyl, tetra Selenium condensed tetraphenyl, tetradecyl fused tetraphenyl, poly(3-alkylthiophene), poly(3-thiophene-β-ethanesulfonic acid), poly(nitro-alkylpyrrole) poly(3-alkylpyrrole), Poly(3,4-dialkylpyrrole), poly(2,2'-thiophene pyrrole) and poly(dibenzothiophene sulfide).

If desired, the organic semiconductor material can contain a polymer therein. The polymer must only be dissolved in an organic solvent. Specifically, examples of the polymer (organic binder, binder) may include polystyrene, poly(α-methylstyrene), and polyene. Further, if necessary, a binder (so-called doping material such as, for example, an n-type impurity and a p-type impurity) may be added.

Examples of the solvent for preparing a solution of one of the organic semiconductor materials may include aromatics such as toluene, xylene, mesitylene, and tetralin; and ketones such as cyclopentanone and cyclohexanone; and hydrocarbons such as decahydrogen Naphthalene. Most importantly, from the viewpoint of transistor characteristics, and from the viewpoint of preventing rapid drying of the organic semiconductor material in the formation of the organic semiconductor material layer, it is preferred to use a solvent having a relatively high boiling point such as mesitylene, tetrahydrogenation. Naphthalene and decalin.

The method of forming an organic semiconductor material layer can include an application method. For the application method herein, the co-application method can be used all without any difficulty, and in particular, examples thereof can include, for example, various types of application methods mentioned above. In some cases, various types of PVD, CVD, and the like mentioned above may also be used.

Examples of the substrate body may include a flexible plastic film, a plastic sheet, and a plastic substrate, and include an organic polymer such as polymethyl methacrylate (polymethyl methacrylate, PMMA), polyvinyl alcohol (PVA), vinyl. Phenol (PVP), polyether oxime (PES), polyimine, polyamine, polyacetal, polycarbonate (PC), polyethylene terephthalate (PET), ethylene naphthalate ( PEN), polyvinyl ether ketone and polyene are exemplified, another alternative is mica. The use of a substrate body comprising one of the flexible organic polymers or polymeric materials makes it possible to incorporate or integrate electronic devices and semiconductor devices (TFTs) into, for example, image display devices and electronic devices having a curved shape in. Alternatively, the substrate body may include various types of glass substrates, various types of glass substrates formed of an insulating film on the surface thereof, a quartz substrate, a quartz substrate having an insulating film formed on the surface thereof, and a germanium substrate. A tantalum substrate having an insulating film, a sapphire substrate, a metal substrate containing various types of alloys or various types of metals such as stainless steel, aluminum, and nickel, a metal foil, and a paper sheet are formed on the surface thereof. The base body can be placed on (or on) the support member suitably selected from one of the materials mentioned above. Other examples of support members may include conductive substrates (including substrates such as gold and aluminum, substrates containing highly oriented graphite, stainless steel substrates, etc.). On such a substrate body, a functional film such as a buffer layer for improving adhesion or flatness and a barrier film for improving gas barrier properties can be formed. Some of the substrate bodies of the substrate absorb the laser light for processing, and when there is a problem of heat generation due to absorption of the laser light, this problem can occur by providing a non-absorbed thunder on the substrate body. One layer of light (a layer that does not absorb laser light) or a layer that hardly absorbs laser light (a layer that hardly absorbs laser light) is avoided. It should be noted that the material for constituting the layer that does not absorb the laser light or the layer that does not absorb the laser light may include, for example, yttrium oxide SiO _x , yttrium nitride SiN _Y , yttrium oxynitride SiO _X N _Y , aluminum oxide. AlO _x , polyethylene, polypropylene, PMMA and fluororesin.

Examples of the support member may include the above-mentioned substrate body, and a conductive substrate (a substrate including various alloys or various types of metals, for example, a substrate including a metal such as gold and aluminum, a substrate containing highly oriented graphite, stainless steel) Substrate). Further, the material for constituting the insulating layer provided on the supporting member may also contain a material for constituting the gate insulating layer, and a conventional insulating film can be widely used.

An electronic device according to an embodiment of the present invention may have a so-called three-terminal structure or Double-ended structure. An electronic device having a three-terminal structure constitutes, for example, a field effect transistor as described above, and more specifically, a thin film transistor (TFT). Another option is to have an electronic device having a three-terminal structure, for example, a light-emitting element. More specifically, the device may constitute a light-emitting element (organic light-emitting element, organic light-emitting transistor), wherein the organic semiconductor material layer (active layer) emits light by voltage application to the control electrode, the first electrode, and the second electrode . In such electronic devices, the voltage applied to the control electrode controls the flow of current through the layer of organic semiconductor material from the first electrode toward the second electrode. The function of the electronic device to function as a field effect transistor or as a light emitting element depends on the voltage application (bias) to the first electrode and the second electrode. First, a current flows from the first electrode to the second electrode when the control electrode is modulated by a bias applied to a level that does not inject electrons from the second electrode. This is a transistor operation. On the other hand, when the bias voltage to the first electrode and the second electrode increases with a sufficiently accumulated hole, electron injection is started, and light emission is generated by recombination of electrons and holes. Further, an example of an electronic device having a double-ended structure may include a photoelectric conversion element in which irradiation of an organic semiconductor material layer (active layer) having light allows a current to flow between the first electrode and the second electrode.

An electronic device according to an embodiment of the present invention can also be used as a sensor. Examples of the sensor may include an optical sensor and a photoelectric conversion element (specifically, a solar cell and an image sensor). Specifically, a dye that absorbs light (including not only visible light but also ultraviolet rays and infrared rays) can be used as an organic semiconductor molecule for constituting an organic semiconductor material layer (active layer) of an optical sensor. Further, in the case of the photoelectric conversion element, irradiating the organic semiconductor material layer with light (including not only visible light but also ultraviolet rays and infrared rays) allows a current to flow between the first electrode and the second electrode. It should be noted that an electronic device having a three-terminal structure may also constitute a photoelectric conversion element, in which case a voltage may or may not be applied to the control electrode, and in the former case, applying a voltage to the control electrode makes it possible to modulate A flowing current. In addition, an example of a sensor according to an embodiment of the present invention may further include: a chemical substance sensor for applying a current between the first electrode and the second electrode or Applying an appropriate voltage between the first electrode and the second electrode to measure the amount (concentration) of the chemical substance absorbed on the organic semiconductor material layer, and by using the resistance value between the first electrode and the second electrode The resistance value of the organic semiconductor material layer is measured by the fact that the chemical substance to be detected is changed while being absorbed on the organic semiconductor material layer. Alternatively, the example may also include a molecular sensor having a molecular recognition capability, and further bonding and anchoring by bonding and anchoring a bonding molecule (for example, a biomolecule) to the surface of the organic semiconductor material layer. A biosensor prepared by a functional molecule of molecular interaction (for example, another biomolecule). It should be noted that due to the absorption of the balanced chemical species on the layer of organic semiconductor material, the equilibrium state also changes as the amount (concentration) of the chemical species changes over time in the atmosphere of one of the layers of the semiconductor material of the placement machine. Examples of the chemical substance may include, for example, NO ₂ gas, O ₂ gas, NH ₃ gas, styrene gas, hexane gas, octane gas, decane gas, and trimethylbenzene gas.

Although not limiting, an image display device can be exemplified as one example of a device into which an electronic device is incorporated in accordance with an embodiment of the present invention. Examples of the image display device according to an embodiment of the present invention may include a liquid crystal display, an organic electroluminescence display, a plasma display, an electrophoretic display including an electrophoretic display element, a cold cathode field emission display, and a semiconductor including a light emitting diode A display of light-emitting elements. In addition, examples of the image display device may include various types of image display devices (for example, various types of image display devices mentioned above) in the following: for example, a desktop personal computer, Notebook PCs, mobile PCs and tablet terminals (including tablet PCs, PDAs (personal digital assistants), car navigation systems, cellular phones and smart phones), game consoles, e-books, electronic paper (such as electronic newspapers) ), billboards, posters, bulletin boards (such as blackboards), photocopying machines, alternative rewritable papers for printers, calculators, display units for home appliances, display units for reward cards, electronic advertising, electronic POP Wait. In addition, examples thereof may also include various types of lighting systems.

When an electronic device according to an embodiment of the present invention is applied to or used in various types In the case of an electronic device including an image display device, an electronic paper, and an RFID (Radio Frequency Identification Card), a monolithic integrated circuit having a large number of electronic devices integrated on a support member can be provided, or individual electronic devices can be cut. It is individualized and used as a discrete component. In addition, the electronic device can be sealed with a resin.

[Example 1]

Example 1 relates to an electronic device, in particular, a first bottom gate/top contact type electronic device (more specifically, a thin film transistor, a TFT as a semiconductor device) according to an embodiment of the present invention. A method for fabricating an electronic device according to the first and second aspects of the present invention, a substrate for forming an image display device according to an embodiment of the present invention, and according to one embodiment of the present invention Image display device. 1A shows a schematic diagram illustrating a configuration of an organic semiconductor material layer or the like of an electronic device according to Example 1, and FIGS. 1B and 1C show a schematic partial cross-sectional view along one of arrows BB of FIG. 1A, and along A schematic partial cross-sectional view of one of the arrows CC of Figure 1A. It should be noted that in the schematic diagram illustrating the configuration of the organic semiconductor material layer or the like of the electronic device, the organic semiconductor material layer and a metamorphic region are shaped to clearly define the organic semiconductor material layer and the modified region.

The electronic device according to Example 1 or Examples 2 to 9 includes a first electrode 26 and a second electrode 27, a patterned organic semiconductor material layer 23 and one of the conductive thin layers extending from the organic semiconductor material layer 23, as will be explained later. In the region 30, the conductive metamorphic region is obtained by patterning and modifying the organic semiconductor material constituting the organic semiconductor material layer 23. Further, at least a part of any path connecting one of the first electrode 26 and the second electrode 27 does not have the metamorphic region 30.

In addition, the substrate (backplane) for constituting an image display device according to Example 1 has a two-dimensional matrix configuration along a first direction and a second direction, as will be explained later according to Example 1 or an example. One of a plurality of electronic devices of 2 to 8. Further, the image display device according to Example 1 includes a base for constructing an image display device according to Example 1. board.

In the electronic device of Example 1 or Examples 2 to 9 as will be described later, the organic semiconductor material layer 23 has a first side 231 which is parallel to one of the directions in which the first electrode 26 and the second electrode 27 extend. a third side 233, and a second side 232 and a fourth side 234 connecting the first side 231 and the third side 233, wherein the first side 301 of the metamorphic region and the first side 231 of the organic semiconductor material layer 23 Contacting, and one of the metamorphic regions, the second region 302 is in contact with the third side 233 of the organic semiconductor material layer 23, and the metamorphic region 30 is not provided along the second side 232 and the fourth side 234 of the organic semiconductor material layer 23.

Further, according to the electronic device of Example 1 or Examples 2 to 8 which will be explained later, a so-called three-terminal electronic device further includes a control electrode 21.

More specifically, the electronic device according to Example 1 is a first bottom gate/top contact type electronic device further comprising an insulating layer 22. In addition, the control electrode 21 is formed on a base body 10, the insulating layer 22 is formed on the control electrode 21 and the base body 10, the organic semiconductor material layer 23 is formed on the insulating layer 22, and the first electrode 26 and the second electrode 27 are formed. On the organic semiconductor material layer 23. Further, there is a first electrode 26 in contact with the first region 301 of the metamorphic region, and a second electrode 27 in contact with the second region 302 of the metamorphic region.

Then, the electronic device according to Example 1 or Examples 2 to 8 specifically includes a thin film transistor (TFT) in which the control electrode 21 constitutes a gate electrode and the insulating layer 22 constitutes a gate insulating layer. The first electrode 26 and the second electrode 27 constitute a source/drain electrode, and the organic semiconductor material layer 23 located between the first electrode 26 and the second electrode 27 constitutes a channel formation region 24.

Specifically, the first electrode 26 and the second electrode 27 are formed in one of the channel forming region extensions 25 extending from the channel forming region 24 (corresponding to a portion of the organic semiconductor material layer 23). In addition, a metamorphic zone 30 is formed at the outer edge of the channel forming zone extension 25.

A substrate (backplane) constituting an image display device according to Example 1 has a first side And a plurality of electronic devices (TFTs) according to Example 1 or Examples 2 to 8 and a control electrode 21 of the electronic device arranged in the first direction, which will be arranged in a two-dimensional matrix form in a second direction. a (gate electrode) connected to the gate wiring extending in the first direction, and a first electrode 26 (source/drain electrode on either side) of the electronic device disposed in the second direction is connected to the second direction Extended signal routing.

Further, the image display device according to Example 1 includes a substrate (backplane) for constituting an image display device according to Example 1.

In Example 1 or Examples 2 to 8 as will be described later herein, the substrate body 10 comprises, for example, a plastic film such as PET, PEN, PES or polyimide, metal foil or glass. The control electrode (gate electrode) 21 contains, for example, aluminum (Al) or a laminated structure of one of Al and TI. The insulating layer (gate insulating layer) 22 contains, for example, polyvinyl phenol (PVP). The organic semiconductor material layer 23 comprises, for example, pentacene or TIPS pentacene, or one of the derivatives of perylene xanthene (PXX) (more specifically, for example, ethylphenyl PXX) . The first electrode 26 and the second electrode 27 (source/drain electrode pair) include, for example, gold (Au) or copper (Cu).

A method for manufacturing one of the electronic devices according to Example 1 will be described below with reference to FIGS. 3A, 3B, 3C, 4A, 4B, and 5A. 3A, 3B, and 4A are schematic partial cross-sectional views of the substrate body and the like as in the case of the arrow BB of FIG. 1A, and FIGS. 3C, 4B, and 5A illustrate the organic semiconductor material. Schematic diagram of the configuration of layers.

[Step 100]

First, the control electrode 21 is formed on the substrate body 10. Specifically, the control electrode 21 is formed by a vacuum deposition method when the base body 10 including a glass substrate 11 and an insulating film 12 is partially covered with a hard mask. In this way, the control electrode 21 can be formed without any photolithography procedure. However, the method for forming the control electrode 21 is not limited thereto, but the control electrode 21 may be based on a layer of a conductive material constituting one of the control electrodes 21. A deposition technique is formed in combination with one of an etching technique, formed according to a so-called lift-off method, or formed according to a printing method.

[Step 110]

Next, an insulating layer 22 is formed on the base body 10 and the control electrode 21. Specifically, the insulating layer 22 is formed over the entire surface according to a spin coating method. More specifically, polyvinyl phenol insulation can be obtained by applying a polyvinyl phenol (PVP) solution containing one of the crosslinking agents to the substrate body 10 and the control electrode 21, and then heating the solution to 150 ° C. Layer 22.

[Step 120]

Thereafter, an organic semiconductor material layer 23 containing an organic semiconductor material is formed over the substrate body 10. Specifically, an organic semiconductor material layer 23 is formed on the insulating layer 22 according to, for example, a spin coating method (see FIG. 3A). In the spin coating method, an organic semiconductor material solution having one of organic semiconductor materials dissolved in a solvent, specifically, an organic semiconductor material solution having one of ethylphenyl PXX dissolved in toluene is used.

[Step 130]

Then, the organic semiconductor material layer 23 is subjected to patterning. Specifically, the organic semiconductor material layer 23 is subjected to patterning by a laser stripping method. More specifically, the organic semiconductor material layer 23 is subjected to patterning such that a desired region of one of the organic semiconductor material layers 23 is irradiated with laser light having a wavelength of 248 nm emitted from a KrF excimer laser to remove the organic semiconductor material layer 23 One of the non-essential areas. In this case, the laser irradiation energy is set at a high level in order to achieve high productivity. Therefore, the unnecessary region of the organic semiconductor material layer 23 can be quickly removed, and the conductive metamorphic region 30 obtained by modifying the organic semiconductor material constituting the organic semiconductor material layer 23 is formed on the patterned organic semiconductor material layer 23 At the outer edge zone (see Figure 3B and Figure 3C). In some cases, when the organic semiconductor material layer 23 is subjected to patterning by a laser stripping method, the insulating layer 22 is also slightly removed in the thickness direction. In this way, an organic semiconductor material layer 23 can be formed, the organic semiconductor material layer having parallel The first side 231 and the third side 233 extending in the direction in which the first electrode 26 and the second electrode 27 extend, and the second side 232 and the fourth side 234 connecting the first side 231 and the third side 233. The planar shape of the organic semiconductor material layer 23 is a rectangle.

[Step 140]

Then, the first electrode 26 and the second electrode 27 are formed on the organic semiconductor material layer 23. Specifically, on the organic semiconductor material layer 23, more specifically, on the channel formation region extension 25 extending from the channel formation region 24, the first electrode 26 and the second electrode 27 are formed (source/drain electrode) Correct). That is, the first electrode 26 and the second electrode 27 may be formed in combination with one of a deposition technique of a conductive material layer constituting the first electrode 26 and the second electrode 27 in combination with an etching technique. However, the method for forming the first electrode 26 and the second electrode 27 is not limited thereto, and the first electrode 26 and the second electrode 27 may be formed on the first electrode 26 and the second electrode 27 in addition to the first electrode 26 and the second electrode 27. The region outside the region is formed by a vapor phase deposition method when covered with a hard mask, formed according to a so-called lift-off method, or formed according to a printing method. In this way, the structure as shown in FIGS. 4A and 4B can be obtained.

[Step 150]

Thereafter, a portion 23' of the organic semiconductor material layer 23 is removed along the second side 232 and the fourth side 234 of the organic semiconductor material layer 23. Specifically, a passivation film 28 for covering the patterned organic semiconductor material layer 23, the first electrode 26, and the second electrode 27 is formed according to a CVD method and a patterning technique (see FIG. 5A). The second side 232 and the fourth side 234 of the patterned organic semiconductor material layer 23, and the portion 23' of the organic semiconductor material layer 23 located near the second side 232 and the fourth side 234 are not covered with the passivation film 28. Then, by one of the optimization conditions (laser irradiation energy can be set at a low level) one of the laser stripping methods, or under an optimized condition, a dry etching method or a wet etching method A portion 23' (including the metamorphic region 30) of the organic semiconductor material layer 23 not covered with the passivation film 28 and located near the second side 232 and the fourth side 234 is removed. It should be noted that the conditions for the laser stripping method, the dry etching method, and the wet etching method may be such that the metamorphic region 30 is not in various types of testing periods. New conditions for formation. Thereafter, removal of the passivation film 28 can provide an electronic device (TFT) according to Example 1 as shown in FIGS. 1A, 1B, and 1C. It should be noted that the passivation film 28 may be left. Alternatively, a substrate for forming an image display device according to the electronic device (TFT) of Example 1, or an image display device can be obtained.

[Step 160]

For example, in the manufacture of the image display device, after this step, by above or above the TFT obtained as an electronic device for constructing one of the control units (pixel driving circuits) of an image display device An image display device is formed according to a conventional method for forming an image display unit (specifically, for example, an organic electroluminescence device, an electrophoretic display device, a semiconductor light emitting device, and the like). In this case, one of the obtained electronic components and the image display unit (for example, a pixel electrode) of the control unit (pixel driving circuit) constituting the image display device can be connected to one of the contacts such as a contact hole or a wiring. And connected. The same applies to Examples 2 to 8 below.

One of the electronic devices obtained without removing the portion 23' of the organic semiconductor material layer 23 along the second side 232 and the fourth side 234 of the organic semiconductor material layer 23 is regarded as an electronic device according to Comparative Example 1A, One of the electronic devices obtained by removing the width of about 15 μm from the portion 23' of the organic semiconductor material layer 23 along the second side 232 and the fourth side 234 of the organic semiconductor material layer 23 is regarded as an electronic device according to Comparative Example 1B. And an electronic device obtained by removing a width of about 30 μm from a portion 23' of the organic semiconductor material layer 23 along the second side 232 and the fourth side 234 of the organic semiconductor material layer 23 is regarded as an electronic device according to Example 1. . The V-I characteristics are then evaluated for each electronic device. The results are shown in Figure 22. In Fig. 22, the symbols "C", "B", and "A" indicate information on Comparative Example 1A, information on Comparative Example 1B, and information on Example 1, respectively. Further, the channel length is 100 μm, the channel width is 240 μm, and the drain voltage is -30 volts. The electric power according to Comparative Example 1A and Comparative Example 1B was determined as compared with the electronic device according to Example 1. The sub-devices are larger in the off-state current value because leakage current flows between the electrodes through the metamorphic region 30. On the other hand, the electronic device according to Example 1 is small in the off state current value because the leakage current can be reduced without any current path generated by the short circuit due to the connection of the first electrode 26 And the fact that any one of the second electrodes 27 does not have the metamorphic region 30.

In the case of the electronic device according to Example 1, the simplification of the patterning step can be achieved because the organic semiconductor material layer is subjected to patterning by a laser stripping method. Further, at least a portion of any path connecting one of the first electrode and the second electrode does not have a metamorphic region. Therefore, the leakage current can be reduced without any current path generated by the short circuit, and hardly degrades the characteristics of the electronic device. On the other hand, since the conductive metamorphic region of the deteriorated organic semiconductor material is included, an increase in the on-state current and a decrease in contact resistance can be achieved.

It should be noted that [Step 140] and [Step 150] set forth above may be performed in reverse order. That is, after the first electrode 26 and the second electrode 27 (source/drain electrode pair) are formed on the organic semiconductor material layer 23, a portion (including the metamorphic region 30) of the organic semiconductor material layer 23 may be irradiated with laser light. A patterned organic semiconductor material layer 23 is obtained. In addition, the metamorphic region 30 may be formed outside the first electrode 26 and the second electrode 27, as shown in FIG. 2A, which illustrates a configuration of one of the organic semiconductor material layers and the like according to a modified example of the electronic device of Example 1. 2B shows a schematic partial cross-sectional view along one of the arrows BB of Figure 2A. Thus, in [Step 150], instead of removing the portion 23' of the organic semiconductor material layer 23 (including the metamorphic region 30) by a laser stripping method or the like under optimized conditions, a needle can be used Or a second side 232 and a fourth side 234 of the patterned organic semiconductor material layer 23, and a layer of organic semiconductor material located adjacent the second side 232 and the fourth side 234, according to, for example, a physical removal method. Portion 23' of 23 is separated from a portion of organic semiconductor material layer 23 which acts as channel forming region 24 and channel forming region extension 25, as shown in Figure 5B. The organic semiconductor material layer is removed from the separated component (separation groove) 29 twenty three.

[Example 2]

Example 2 is a modification of Example 1 relating to a second bottom gate/top contact type electronic device. 2C shows a schematic partial cross-sectional view of one of the electronic devices according to Example 2 as in the case of arrow B-B of FIG. 1A.

The electronic device according to Example 2 further includes an insulating layer 22. In addition, a control electrode 21 is formed on a base body 10, an insulating layer 22 is formed on the control electrode 21 and the base body 10, an organic semiconductor material layer 23, a first region 301 of a metamorphic region, and one of the metamorphic regions The second region 302 is formed on the insulating layer 22, and a first electrode 26 is formed on the first region 301 of the metamorphic region, and a second electrode 27 is formed on the second region 302 of the metamorphic region.

The channel forming region extension 25 serves as the first region 301 of the metamorphic region and the second region 302 of the metamorphic region. The first region 301 of the metamorphic region extends from one end surface of the first electrode 26 opposite to the second electrode 27 toward the second electrode 27. In addition, the second region 302 of the metamorphic region extends from one end surface of the second electrode 27 opposite to the first electrode 26 toward the first electrode 26. Further, there is an organic semiconductor material layer 23 corresponding to a channel formation region 24 between the extensions 31 of the metamorphic region 30. As just explained, since the organic semiconductor material layer 23 is formed in a portion of the region between the first electrode 26 and the second electrode 27, a shorter channel can be achieved.

[Example 3]

Example 3 is also a modification of Example 1, relating to a first bottom gate/bottom contact type electronic device. 6A is a schematic view illustrating a configuration of an organic semiconductor material layer or the like of an electronic device according to Example 3, and FIGS. 6B and 6C are respectively schematic partial cross-sectional views along arrow BB of FIG. 6A and A schematic partial cross-sectional view along one of the arrows CC of Figure 6A.

The electronic device according to Example 3 further includes an insulating layer 22. In addition, a control electrode 21 is formed on a base body 10, an insulating layer 22 is formed on the control electrode 21 and the base body 10. A first electrode 26 and a second electrode 27 are formed on the insulating layer 22, an organic half. The conductor material layer 23 is formed from the insulating layer 22 above the first electrode 26 and the second electrode 27 between the first electrode 26 and the second electrode 27.

Further, there is a first electrode 26 in contact with the first region 301 of the metamorphic region, and a second electrode 27 in contact with the second region 302 of the metamorphic region. The organic semiconductor material layer 23 located between the first electrode 26 and the second electrode 27 constitutes a channel formation region 24. The first electrode 26 and the second electrode 27 are formed under one of the channel formation region extensions 25 extending from the channel formation region 24 (corresponding to a portion of the organic semiconductor material layer 23). In addition, a metamorphic zone 30 is formed at the outer edge of the channel forming zone extension 25.

A method for manufacturing one of the electronic devices according to Example 3 will be described below with reference to FIGS. 8A, 8B, 9A, 9B, and 10A. It should be noted that FIGS. 8A, 8B, and 9A are schematic partial cross-sectional views of the substrate main body and the like as in the case of the arrow BB of FIG. 6A, and FIGS. 9B and 10A illustrate the arrangement of the organic semiconductor material layer or the like. The view.

[Step 300]

First, the control electrode 21 is formed on the substrate main body 10 in the same manner as in [Step 100] according to Example 1. Next, an insulating layer 22 is formed on the substrate main body 10 and the control electrode 21 in the same manner as in [Step 110] according to Example 1.

[Step 310]

Then, the first electrode 26 and the second electrode 27 are formed on the insulating layer 22 in the same manner as in [Step 140] according to Example 1. In this way, the structure shown in Fig. 8A can be obtained.

[Step 320]

Thereafter, an organic semiconductor material layer 23 containing an organic semiconductor material is formed over the first electrode 26, the second electrode 27, and the insulating layer 22 in the same manner as in [Step 120] of Example 1. In this way, the structure shown in Fig. 8B can be obtained.

[Step 330]

Then, in the same manner as in [Step 130] of Example 1, organic semiconducting The bulk material layer 23 is subjected to patterning. The conductive metamorphic region 30 obtained by modifying the organic semiconductor material constituting the organic semiconductor material layer 23 is formed at the outer edge region of the patterned organic semiconductor material layer 23 (see FIGS. 9A and 9B).

[Step 340]

Thereafter, a portion 23' of the organic semiconductor material layer 23 is removed along one of the second side 232 and the fourth side 234 of the organic semiconductor material layer 23 in the same manner as in [Step 150] according to Example 1. Specifically, a passivation film 28 for covering one of the patterned organic semiconductor material layer 23, the first electrode 26, and the second electrode 27 is formed according to a CVD method and a patterning technique (see FIG. 10A). Then, a portion 23' (including the metamorphic region 30) of the organic semiconductor material layer 23 not covered with the passivation film 28 and located near the second side 232 and the fourth side 234 is removed. Thereafter, the removal of the passivation film 28 can provide an electronic device (TFT) according to Example 3 as shown in FIGS. 6A, 6B, and 6C. It should be noted that the passivation film 28 may be left. Alternatively, a substrate for forming an image display device according to the electronic device (TFT) of Example 3, or an image display device can be obtained.

The metamorphic region 30 may be formed outside the first electrode 26 and the second electrode 27, as shown in FIG. 6A, which illustrates a configuration of one of the organic semiconductor material layers and the like of one of the modified examples of the electronic device according to Example 3, and FIG. 6B shows A schematic partial cross-sectional view along one of the arrows BB of Figure 6A. Further, in [Step 340], instead of removing a portion 23' of the organic semiconductor material layer 23 (including the metamorphic region 30) by a laser stripping method or the like under optimized conditions, by using a needle or The second side 232 and the fourth side 234 of the patterned organic semiconductor material layer 23, and the organic semiconductor material layer located adjacent the second side 232 and the fourth side 234, according to, for example, a physical removal method Portion 23' of 23 is separated from a portion of organic semiconductor material layer 23 which acts as channel forming region 24 and channel forming region extension 25, as shown in Figure 10B. The organic semiconductor material layer 23 is removed from the separated component (separation groove) 29.

[Example 4]

Example 4 is a modification of Example 3 relating to a second bottom gate/bottom contact type electronic device. Figure 7C shows a schematic partial cross-sectional view of one of the electronic devices according to Example 4 as in the case of arrow B-B of Figure 6A.

The electronic device according to Example 4 further includes an insulating layer 22. In addition, a control electrode 21 is formed on a base body 10, an insulating layer 22 is formed on the control electrode 21 and the base body 10. A first electrode 26 and a second electrode 27 are formed on the insulating layer 22, an organic semiconductor material layer. 23 is formed on the insulating layer 22 between the first electrode 26 and the second electrode 27, and a first region 301 of a metamorphic region is formed on the insulating layer 22 above the first electrode 26, and one of the metamorphic regions is in the second region. 302 is formed from the insulating layer 22 above the second electrode 27.

The channel forming region extension 25 serves as the first region 301 of the metamorphic region and the second region 302 of the metamorphic region. The first region 301 of the metamorphic region extends from one end surface of the first electrode 26 opposite to the second electrode 27 toward the second electrode 27. In addition, the second region 302 of the metamorphic region extends from one end surface of the second electrode 27 opposite to the first electrode 26 toward the first electrode 26. Further, there is an organic semiconductor material layer 23 corresponding to a channel formation region 24 between the extensions 31 of the metamorphic region 30. As just explained, since the organic semiconductor material layer 23 is formed in a portion of the region between the first electrode 26 and the second electrode 27, a shorter channel can be achieved.

[Example 5]

Example 5 is also a modification of Example 1, relating to a first top gate/bottom contact type electronic device. 11A is a schematic view illustrating one configuration of an organic semiconductor material layer or the like of an electronic device according to Example 5, and FIGS. 11B and 11C show a schematic partial cross-sectional view along the arrow BB of FIG. 11A and along the figure. A schematic partial cross-sectional view of one of the arrows CC of 11A.

The electronic device according to Example 5 further includes an insulating layer 22. In addition, a first electrode 26 and a second electrode 27 are formed on a base body 10, and an organic semiconductor material layer 23 is formed from the base body 10 to the first electrode 26 and the second electrode 27 at the first electrode 26 and Between the second electrodes 27, an insulating layer 22 is formed over the organic semiconductor material layer 23, and A step is formed over the metamorphic region 30, and a control electrode 21 is formed on the insulating layer 22.

Further, there is a first electrode 26 in contact with the first region 301 of the metamorphic region, and a second electrode 27 in contact with the second region 302 of the metamorphic region. The organic semiconductor material layer 23 located between the first electrode 26 and the second electrode 27 constitutes a channel formation region 24. The first electrode 26 and the second electrode 27 are formed under one of the channel formation region extensions 25 extending from the channel formation region 24 (corresponding to a portion of the organic semiconductor material layer 23). In addition, a metamorphic zone 30 is formed at the outer edge of the channel forming zone extension 25.

A method for manufacturing one of the electronic devices according to Example 5 will be described below with reference to FIGS. 13A, 13B, 13C, and 14A. 13A and 13B are schematic partial cross-sectional views of the substrate main body and the like as in the case of the arrow BB of Fig. 11A, and Figs. 13C and 14A are schematic views illustrating the arrangement of the organic semiconductor material layer or the like. .

[Step 500]

Then, the first electrode 26 and the second electrode 27 are formed on the substrate main body 10 in the same manner as in [Step 140] according to Example 1.

[Step 510]

Thereafter, in the same manner as [Step 120] according to Example 1, an organic semiconductor material layer 23 containing an organic semiconductor material was formed over the first electrode 26, the second electrode 27, and the substrate body 10 (see FIG. 13A).

[Step 520]

Thereafter, the organic semiconductor material layer 23 was subjected to patterning in the same manner as in [Step 130] of Example 1. The electrically conductive metamorphic region 30 obtained by modifying the organic semiconductor material constituting the organic semiconductor material layer 23 is formed at the outer edge region of the patterned organic semiconductor material layer 23 (see FIGS. 13B and 13C).

[Step 530]

Then, the organic semiconductor material layer is removed along one of the second side 232 and the fourth side 234 of the organic semiconductor material layer 23 in the same manner as in [Step 150] of Example 1. 23 is a part 23'. Specifically, a mask layer 28' for covering one of the patterned organic semiconductor material layer 23, the first electrode 26, and the second electrode 27 is formed according to a CVD method and a patterning technique (see Fig. 14A). The second side 232 and the fourth side 234 of the patterned organic semiconductor material layer 23, and the portion 23' of the organic semiconductor material layer 23 located adjacent the second side 232 and the fourth side 234 are not covered with the mask layer 28'. Then, a portion 23' (including the metamorphic region 30) of the organic semiconductor material layer 23 not covering the mask layer 28' and located adjacent to the second side 232 and the fourth side 234 is removed. Thereafter, the mask layer 28' is removed.

[Step 540]

Thereafter, in the same manner as in [Step 110] and [Step 100] of Example 1, the insulating layer 22 is formed over the organic semiconductor material layer 23, the modified region 30, and the substrate body 10, and further, the control electrode 21 is formed. On a portion of the insulating layer 22 opposite the channel forming region 24. In this way, the electronic device (TFT) according to Example 1 can be obtained as shown in FIGS. 11A, 11B, and 11C. Alternatively, an image display device for forming a substrate of an image display device according to the electronic device (TFT) of Example 5 can be obtained.

The metamorphic region 30 may be formed outside the first electrode 26 and the second electrode 27, as shown in FIG. 12A, which is a schematic diagram illustrating a configuration of one of the organic semiconductor material layers and the like according to a modified example of the electronic device of Example 5, and FIG. 12B shows A schematic partial cross-sectional view along one of arrows BB of Figure 12A. Further, in [Step 520], instead of removing the portion 23' of the organic semiconductor material layer 23 (including the metamorphic region 30) by a laser stripping method or the like under optimized conditions, a needle may be used Or the second side 232 and the fourth side 234 of the patterned organic semiconductor material layer 23, and the organic semiconductor material located near the second side 232 and the fourth side 234, according to, for example, a physical removal method. Portion 23' of layer 23 is separated from portions of organic semiconductor material layer 23 which act as channel forming regions 24 and channel forming region extensions 25, as shown in Figure 14B. The organic semiconductor material layer 23 is removed from the separated component (separation groove) 29.

[Example 6]

Example 6 is a modification of Example 5 relating to a second top gate/bottom contact type electronic device. Figure 12C shows a schematic partial cross-sectional view of one of the electronic devices according to Example 6 as in the case of arrow B-B of Figure 11A.

The electronic device according to Example 6 further includes an insulating layer 22. In addition, a first electrode 26 and a second electrode 27 are formed on a base body 10. An organic semiconductor material layer 23 is formed on the base body 10 between the first electrode 26 and the second electrode 27, and a metamorphic region A first region 301 is formed from the substrate body 10 to the first electrode 26, and a second region 302 of the metamorphic region is formed from the substrate body 10 to the second electrode 27. The insulating layer 22 is formed on the organic semiconductor material layer 23, The first region 301 of the metamorphic region and the second region 302 of the metamorphic region are disposed, and the control electrode 21 is formed on the insulating layer 22.

The channel forming region extension 25 serves as the first region 301 of the metamorphic region and the second region 302 of the metamorphic region. The first region 301 of the metamorphic region extends from one end surface of the first electrode 26 opposite to the second electrode 27 toward the second electrode 27. In addition, the second region 302 of the metamorphic region extends from one end surface of the second electrode 27 opposite to the first electrode 26 toward the first electrode 26. Further, there is an organic semiconductor material layer 23 corresponding to a channel formation region 24 between the extensions 31 of the metamorphic region 30. As just explained, since the organic semiconductor material layer 23 is formed in a portion of the region between the first electrode 26 and the second electrode 27, a shorter channel can be achieved.

[Example 7]

Example 7 is also a modification of Example 1, relating to a first top gate/top contact type of electronic device. 15A is a schematic diagram illustrating one configuration of an organic semiconductor material layer or the like of an electronic device according to Example 7, and FIGS. 15B and 15C show a schematic partial cross-sectional view along one of arrows BB of FIG. 15A, and along A schematic partial cross-sectional view of one of the arrows CC of Fig. 15A.

The electronic device according to Example 7 further includes an insulating layer 22. In addition, an organic semiconductor material layer 23 is formed on a substrate body 10, a first electrode 26 and a second electrode 27 are formed on the organic semiconductor material layer 23, and the insulating layer 22 is formed on the first electrode 26 and the second layer. Above the electrode 27 and the organic semiconductor material layer 23, a control electrode 21 is formed on the insulating layer 22.

Further, there is a first electrode 26 in contact with the first region 301 of the metamorphic region, and a second electrode 27 in contact with the second region 302 of the metamorphic region. The organic semiconductor material layer 23 located between the first electrode 26 and the second electrode 27 constitutes a channel formation region 24. The first electrode 26 and the second electrode 27 are formed over one of the channel formation region extensions 25 extending from the channel formation region 24 (corresponding to a portion of the organic semiconductor material layer 23). In addition, a metamorphic zone 30 is formed at the outer edge of the channel forming zone extension 25.

A method for manufacturing one of the electronic devices according to Example 7 will be described below with reference to FIGS. 17A, 17B, 17C, and 18A. 17A and 17B are schematic partial cross-sectional views of the substrate main body and the like as in the case of the arrow BB of Fig. 15A, and Figs. 17C and 18A are schematic views illustrating the arrangement of the organic semiconductor material layer or the like. .

[Step 700]

First, an organic semiconductor material layer 23 containing an organic semiconductor material is formed on the substrate main body 10 in the same manner as in [Step 120] according to Example 1 (see Fig. 17A).

[Step 710]

Next, the organic semiconductor material layer 23 was subjected to patterning in the same manner as in [Step 130] according to Example 1. The electrically conductive metamorphic region 30 obtained by deteriorating the organic semiconductor material constituting the organic semiconductor material layer 23 is formed at the outer edge region of the patterned organic semiconductor material layer 23 (see FIGS. 17B and 17C).

[Step 720]

Then, a portion 23' of the organic semiconductor material layer 23 is removed along one of the second side 232 and the fourth side 234 of the organic semiconductor material layer 23 in the same manner as in [Step 150] according to Example 1. Specifically, a mask layer 28' for covering one of the patterned organic semiconductor material layers 23 is formed according to a CVD method and a patterning technique. See Figure 18A). The second side 232 and the fourth side 234 of the patterned organic semiconductor material layer 23, and the portion 23' of the organic semiconductor material layer 23 located adjacent the second side 232 and the fourth side 234 are not covered with the mask layer 28'. Then, a portion 23' (including the metamorphic region 30) of the organic semiconductor material layer 23 not covering the mask layer 28' and located adjacent to the second side 232 and the fourth side 234 is removed. Thereafter, the mask layer 28' is removed.

[Step 730]

Thereafter, the first electrode 26 and the second electrode 27 are formed on the organic semiconductor material layer 23 and the modified region 30 in the same manner as in [Step 140] according to Example 1.

[Step 740]

Thereafter, an insulating layer 22 is formed over the organic semiconductor material layer 23, the first electrode 26, the second electrode 27, and the substrate body 10 in the same manner as in [Step 110] and [Step 100] according to Example 1, Further, a control electrode 21 is formed on a portion of the insulating layer 22 opposite to the channel forming region 24. In this way, the electronic device (TFT) according to Example 1 can be obtained as shown in FIGS. 15A, 15B, and 15C. Alternatively, a substrate or an image display device for forming an image display device according to the electronic device (TFT) of Example 7 can be obtained.

The metamorphic region 30 may be formed outside the first electrode 26 and the second electrode 27, as shown in FIG. 16A, which is a schematic diagram illustrating a configuration of an organic semiconductor material layer or the like according to a modified example of one of the electronic devices of Example 7, and FIG. 16B A schematic partial cross-sectional view along one of the arrows BB of Figure 16A is shown. Further, in [Step 720], instead of removing a portion 23' of the organic semiconductor material layer 23 (including the metamorphic region 30) by a laser stripping method or the like under optimized conditions, by using a needle or The second side 232 and the fourth side 234 of the patterned organic semiconductor material layer 23, and the organic semiconductor material layer 23 located adjacent the second side 232 and the fourth side 234, according to, for example, a physical removal method. Portion 23' is separated from a portion of the organic semiconductor material layer 23 which acts as the channel forming region 24 and the channel forming region extension 25, as shown in Fig. 18B. Self-separating part (separation groove) 29, removing organic semiconductor Material layer 23.

[Example 8]

Example 8 is a modification of Example 7, relating to a second top gate/top contact type of electronic device. Figure 16C shows a schematic partial cross-sectional view of one of the electronic devices according to Example 8 as in the case of arrow B-B of Figure 15A.

The electronic device according to Example 8 further includes an insulating layer 22. In addition, an organic semiconductor material layer 23, a first region 301 of a metamorphic region, and a second region 302 of a metamorphic region are formed on a substrate body 10, and a first electrode 26 is formed on the first region 301 of the metamorphic region. A second electrode 27 is formed on the second region 302 of the metamorphic region. The insulating layer 22 is formed on the first electrode 26, the second electrode 27, the organic semiconductor material layer 23, the first region 301 of the metamorphic region, and the metamorphic region. Above the two regions 302, a control electrode 21 is formed on the insulating layer 22.

The channel forming region extension 25 serves as the first region 301 of the metamorphic region and the second region 302 of the metamorphic region. The first region 301 of the metamorphic region extends from one end surface of the first electrode 26 opposite to the second electrode 27 toward the second electrode 27. In addition, the second region 302 of the metamorphic region extends from one end surface of the second electrode 27 opposite to the first electrode 26 toward the first electrode 26. Further, there is an organic semiconductor material layer 23 corresponding to a channel formation region 24 between the extensions 31 of the metamorphic region 30. As just explained, since the organic semiconductor material layer 23 is formed in a portion of the region between the first electrode 26 and the second electrode 27, a shorter channel can be achieved.

[Example 9]

Electronic devices in accordance with an embodiment of the present invention have been fully described with reference to three-terminal electronic devices as examples in Examples 1 through 8, but may be double-ended electronic devices. As shown in the schematic partial cross-sectional views of FIGS. 19A and 19B, the double-ended electronic device includes an organic semiconductor material layer 23 including an organic semiconductor material formed on a substrate body 10, and is formed on the organic semiconductor material layer. A first electrode 26 and a second electrode 27 above or below 23. The section of the organic semiconductor material layer 23 located between the first electrode 26 and the second electrode 27 serves as an active layer.

Suitable selection of materials for constituting the organic semiconductor material layer 23, the substrate body 10, and the electrodes 26, 27 allows the double-ended electronic device to function as an optical sensor, a photoelectric conversion element (specifically, a solar cell or an image) A sensor), a light-emitting element, and also acts as a sensor.

Specifically, a dye that absorbs light (including not only visible light but also ultraviolet rays and infrared rays) as an organic semiconductor molecule for constituting the organic semiconductor material layer 23 can constitute an optical sensor and is constructed by using light (not only Including visible light, and including ultraviolet and infrared rays, irradiating the organic semiconductor material layer 23 to allow a current to flow between the first electrode 26 and the second electrode 27, a photoelectric conversion element (specifically, a solar cell or an image sense) Detector). In addition, a specific example may also include a chemical sensor for applying a current between the first electrode 26 and the second electrode 27 or between the first electrode 26 and the second electrode 27 An appropriate voltage is applied to measure the amount (concentration) of the chemical substance absorbed on the organic semiconductor material layer 23, and the chemistry to be detected by using the resistance value between the first electrode 26 and the second electrode 27 The resistance value of the organic semiconductor material layer 23 is measured by the fact that the substance is changed while being absorbed on the organic semiconductor material layer 23.

Although the invention has been described above with reference to preferred examples, the invention is not considered limited to such examples. The structure, configuration, formation conditions, and manufacturing conditions (which are by way of example) of the electronic device, the image display device, and the substrate for constituting the image display device can be appropriately changed. When an electronic device according to an embodiment of the present invention is applied to or used in a display or various types of electronic devices, a monolithic integrated circuit having a large number of electronic devices integrated on a substrate body or a support member may be provided. Or individual electronic devices can be cut for individualization and used as discrete components.

Although the metamorphic region is formed when the organic semiconductor material layer is subjected to patterning by a laser stripping method in the example, it has been confirmed that the organic semiconductor material layer is subjected to a dry etching method or a wet etching by using a CF4 gas. When the method or plasma treatment is subjected to, for example, patterning, depending on the processing conditions, the patterned organic semiconductor material layer A metamorphic zone is formed in the outer edge zone.

In Examples 2, 4, 6, and 8, the portion of the organic semiconductor material layer 23 may be further partially sputtered before or after the portion 23' of the organic semiconductor material layer 23 is removed along the second side 232 and the fourth side 234 of the organic semiconductor material layer 23. The organic semiconductor material layer 23 is formed to form an extension 31 of the metamorphic region 30.

As shown in Figures 20A, 20B, and 21 (which are schematic diagrams illustrating the configuration of an organic semiconductor material layer, etc.), the second side 232 and the fourth side 234 (for example, each comprising two line segments) One of the combinations) may remove the portion 23' of the organic semiconductor material layer 23 along the second side 232 and the fourth side 234 of the organic semiconductor material layer 23, for example, according to the [Step 150] of Example 1. The removed regions of the organic semiconductor material layer 23 are reduced in the case and the removal time and energy required for removal can be reduced. It should be noted that FIG. 20A shows the state obtained in [Step 140] according to Example 1, and FIG. 20B shows the state in the case of the passivation film 28 formed in [Step 150] according to Example 1, and FIG. 21 shows The state after the passivation film 28 was removed in [Step 150] of Example 1. In the electronic device shown in FIG. 21, at least a part of any path connecting one of the first electrode 26 and the second electrode 27 is provided with the metamorphic region 30, but all paths connecting the first electrode 26 and the second electrode 27 are not deteriorated. Zone 30 occupies. On the other hand, in the electronic device described in the examples 1 to 9, the arbitrary path connecting one of the first electrode 26 and the second electrode 27 does not have the metamorphic region 30.

The sensor can also be constructed from the electronics (bottom gate/top contact type or top gate/top contact type electronics) set forth in Examples 1-8. For example, in particular, the light-emitting elements are constructed from electronic devices. More specifically, the device constitutes a light-emitting element (organic light-emitting element, organic light-emitting transistor) in which the organic semiconductor material layer 23 emits light by voltage application to the control electrode 21, the first electrode 26, and the second electrode 27. Furthermore, the voltage applied to the control gate 21 controls the flow of current from the first electrode 26 toward the second electrode 27 through the organic semiconductor material layer 23. When the bias voltage to the first electrode 26 and the second electrode 27 increases with a sufficiently accumulated hole, electron injection is started, and by recombination of electrons and holes Produces luminescence.

It should be noted that the present invention can provide the following aspects.

[A01]<<电子装置>>

An electronic device comprising a first electrode and a second electrode; a patterned organic semiconductor material layer; and a conductive metamorphic region extending from the organic semiconductor material layer, the conductive metamorphic region being patterned by Obtaining and deforming the organic semiconductor material of the organic semiconductor material layer, wherein at least a portion of any path connecting the first electrode and the second electrode does not have the metamorphic region.

[A02] The electronic device of [A01], wherein the organic semiconductor material layer has a first side and a third side parallel to one of the direction in which the first electrode and the second electrode extend, and the first side is connected And a second side and a fourth side of the third side, wherein a first region of a metamorphic region is in contact with the first side of the organic semiconductor material layer, and a second region of a metamorphic region is associated with the organic region The third side of the layer of semiconductor material contacts, and the second side and the fourth side of the layer of organic semiconductor material are free of any metamorphic regions.

[A03] The electronic device of [A02], further comprising a control electrode.

[A04]<<Bottom Gate/Top Contact Type>>

The electronic device of [A03], further comprising an insulating layer, wherein the control electrode is formed on a substrate body, the insulating layer is formed on the control electrode and the substrate body, and the organic semiconductor material layer is formed on the insulating layer And the first and second electrodes are formed on the organic semiconductor material layer.

[A05] The electronic device of [A04], wherein the first electrode in contact with the first region of the metamorphic region and the second electrode in contact with the second region of the modified region.

[A06] The electronic device of [A03], further comprising an insulating layer, wherein the control electrode is formed on a substrate body, the insulating layer is formed on the control electrode and the substrate body, the organic semiconductor material layer, the The first region of the metamorphic region and the second region of the metamorphic region are formed on the insulating layer, and a first electrode is formed on the first region of the metamorphic region, And a second electrode is formed on the second region of the metamorphic region.

[A07]<<Bottom Gate/Bottom Contact Type>>

The electronic device of [A03], further comprising an insulating layer, wherein the control electrode is formed on a substrate body, the insulating layer is formed on the control electrode and the substrate body, and the first and second electrodes are formed on the insulating layer And on the layer, the organic semiconductor material layer is formed on the insulating layer between the first electrode and the second electrode between the first electrode and the second electrode.

[A08] The electronic device of [A07], wherein the first electrode in contact with the first region of the metamorphic region and the second electrode in contact with the second region of the modified region.

[A09] The electronic device of [A03], further comprising an insulating layer, wherein the control electrode is formed on a substrate body, the insulating layer is formed on the control electrode and the substrate body, and the first and second electrodes are formed On the insulating layer, the organic semiconductor material layer is formed on the insulating layer between the first electrode and the second electrode, and the first region of the metamorphic region is formed from the insulating layer to the first electrode And the second region of the metamorphic region is formed from the insulating layer above the second electrode.

[A10]<<Top Gate/Bottom Contact Type>>

The electronic device of [A03], further comprising an insulating layer, wherein the first and second electrodes are formed on a substrate body, and the organic semiconductor material layer is formed from the substrate body to the first electrode and the second electrode An insulating layer is formed on the organic semiconductor material layer between the first electrode and the second electrode, and the control electrode is formed on the insulating layer.

[A11] The electronic device of [A10], wherein the first electrode in contact with the first region of the modification region and the second electrode in contact with the second region of the modification region.

[A12] The electronic device of [A03], further comprising an insulating layer, wherein the first and second electrodes are formed on a substrate body, the organic semiconductor material layer is formed on the substrate body at the first electrode and the Between the second electrodes, the first region of the metamorphic region is from the base Forming on the bottom body over the first electrode, the second region of the metamorphic region is formed from the substrate body to the second electrode, the insulating layer is formed on the organic semiconductor material layer, the first of the metamorphic region And a second region of the metamorphic region, and the control electrode is formed on the insulating layer.

[A13]<<Top Gate/Top Contact Type>>

The electronic device of [A03], further comprising an insulating layer, wherein the organic semiconductor material layer is formed on a substrate body, and the first and second electrodes are formed on the organic semiconductor material layer, and the insulating layer is formed on the first An electrode and the second electrode and the organic semiconductor material layer are formed on the insulating layer.

[A14] The electronic device of [A13], wherein the first electrode in contact with the first region of the modification region and the second electrode in contact with the second region of the modification region.

[A15] The electronic device of [A03], further comprising an insulating layer, wherein the organic semiconductor material layer, the first region of the modified region, and the second region of the modified region are formed on a substrate body, a first electrode is formed on the first region of the metamorphic region, a second electrode is formed on the second region of the metamorphic region, and the insulating layer is formed on the first electrode and the second electrode, the organic semiconductor material a layer, the first region of the metamorphic region, and the second region of the metamorphic region, and the control electrode is formed on the insulating layer.

[A16] The electronic device according to any one of [A03] to [A15], comprising a thin film transistor, further comprising an insulating layer, and comprising the control electrode for constituting a gate electrode, for constituting a The insulating layer of the gate insulating layer, the first electrode and the second electrode for constituting the source/drain electrode, and the channel forming region between the first electrode and the second electrode The layer of organic semiconductor material.

[A17] An electronic device such as [A01] or [A02], the device comprising a sensor.

[B01]<<Substrate for constituting image display device>>

A substrate for forming an image display device, the substrate comprising a two-dimensional matrix arranged along a first direction and a second direction, such as any one of [A03] to [A16] A plurality of electronic devices.

[B02]<<Image Display Device>>

An image display device comprising a substrate for constituting an image display device as in [B01].

[C01]<<Method for manufacturing electronic devices...First aspect>>

A method for fabricating an electronic device, the method comprising: forming a layer of an organic semiconductor material comprising an organic semiconductor material on a substrate body; then patterning the organic semiconductor material layer; forming a layer on the organic semiconductor material layer a first electrode and a second electrode; and then removing a portion of the organic semiconductor material layer along a second side and a fourth side of the organic semiconductor material layer, parallel to the first electrode and the second electrode The side of the patterned organic semiconductor material layer extending in one direction is regarded as a first side and a third side, and the side connecting the first side and the third side is regarded as the second side and the first side Four sides.

[C02]<<Method for manufacturing electronic devices...Second aspect>>

A method for fabricating an electronic device, comprising: forming at least a first electrode, a second electrode, and a layer of an organic semiconductor material comprising an organic semiconductor material on a substrate body; and then patterning the organic semiconductor material Forming a first side and a third side having a direction parallel to the first electrode and the second electrode extending, and connecting the first side and the second side of the third side and a fourth One of the layers of organic semiconductor material; and then removing a portion of the layer of organic semiconductor material along the second side and the fourth side of the layer of organic semiconductor material.

It will be understood by those skilled in the art that various modifications, combinations, sub-combinations and changes may be made depending on the design requirements and other factors, as long as they fall within the scope of the accompanying claims or their equivalents.

22‧‧‧Insulation/gate insulation

23‧‧‧Organic semiconductor material layer

23 ₁ ‧‧‧First side

23 ₂ ‧‧‧ second side

23 ₃ ‧‧‧ third side

23 ₄ ‧‧‧ fourth side

26‧‧‧First electrode/electrode

27‧‧‧Second electrode/electrode

30‧‧‧metamorphic zone/conducting metamorphic zone

30 ₁ ‧‧‧First District

30 ₂ ‧‧‧Second District

Claims (20)

An electronic device comprising: a first electrode and a second electrode; a patterned organic semiconductor material layer; and a conductive metamorphic region extending from the organic semiconductor material layer, the metamorphic region being patterned by Obtaining and deforming the organic semiconductor material of the organic semiconductor material layer, wherein at least a portion of any path connecting the first electrode and the second electrode does not have the metamorphic region. The electronic device of claim 1, wherein the organic semiconductor material layer has a first side and a third side parallel to one of the direction in which the first electrode and the second electrode extend, and the first side and the first side are connected a second side and a fourth side of the three sides, wherein one of the first regions of the metamorphic region is in contact with the first side of the organic semiconductor material layer, and one of the first regions of the metamorphic region is adjacent to the organic semiconductor material The third side of the layer contacts, and the second side and the fourth side of the layer of organic semiconductor material do not have any metamorphic regions. The electronic device of claim 2, further comprising a control electrode. The electronic device of claim 3, further comprising an insulating layer, wherein the control electrode is formed on a substrate body, the insulating layer is formed on the control electrode and the substrate body, and the organic semiconductor material layer is formed on the insulating layer And the first and second electrodes are formed on the organic semiconductor material layer. The electronic device of claim 4, And having the first electrode in contact with the first region of the metamorphic region and the second electrode in contact with the second region of the metamorphic region. The electronic device of claim 3, further comprising an insulating layer, wherein the control electrode is formed on a substrate body, the insulating layer is formed on the control electrode and the substrate body, the organic semiconductor material layer, the metamorphic region The first region and the second region of the metamorphic region are formed on the insulating layer, a first electrode is formed on the first region of the metamorphic region, and a second electrode is formed in the second region of the metamorphic region On the district. The electronic device of claim 3, further comprising an insulating layer, wherein the control electrode is formed on a substrate body, the insulating layer is formed on the control electrode and the substrate body, and the first and second electrodes are formed on the insulating layer And on the layer, the organic semiconductor material layer is formed on the insulating layer between the first electrode and the second electrode between the first electrode and the second electrode. The electronic device of claim 7, having the first electrode in contact with the first region of the metamorphic region and having the second electrode in contact with the second region of the altered region. The electronic device of claim 3, further comprising an insulating layer, wherein the control electrode is formed on a substrate body, the insulating layer is formed on the control electrode and the substrate body, and the first and second electrodes are formed on the insulating layer a layer of the organic semiconductor material formed on the insulating layer between the first electrode and the second electrode, the first region of the metamorphic region being formed from the insulating layer above the first electrode, and The second region of the metamorphic region is formed from the insulating layer over the second electrode. The electronic device of claim 3, further comprising an insulating layer, wherein the first and second electrodes are formed on a substrate body, and the organic semiconductor material layer is formed from the substrate body to the first electrode and the second electrode An insulating layer is formed on the organic semiconductor material layer between the first electrode and the second electrode, and the control electrode is formed on the insulating layer. The electronic device of claim 10, having the first electrode in contact with the first region of the metamorphic region and having the second electrode in contact with the second region of the metamorphic region. The electronic device of claim 3, further comprising an insulating layer, wherein the first and second electrodes are formed on a substrate body, and the organic semiconductor material layer is formed on the substrate body at the first electrode and the second electrode The first region of the metamorphic region is formed from the substrate body to the first electrode, and the second region of the metamorphic region is formed from the substrate body to the second electrode, the insulating layer is formed on the substrate The organic semiconductor material layer, the first region of the modified region, and the second region of the modified region, and the control electrode is formed on the insulating layer. The electronic device of claim 3, further comprising an insulating layer, wherein the organic semiconductor material layer is formed on a substrate body, the first and second electrodes are formed on the organic semiconductor material layer, and the insulating layer is formed on the first An electrode and the second electrode and the organic semiconductor material layer, and The control electrode is formed on the insulating layer. The electronic device of claim 13 having the first electrode in contact with the first region of the metamorphic region and having the second electrode in contact with the second region of the altered region. The electronic device of claim 3, further comprising an insulating layer, wherein the organic semiconductor material layer, the first region of the metamorphic region, and the second region of the metamorphic region are formed on a substrate body, a first electrode Formed on the first region of the metamorphic region, a second electrode is formed on the second region of the metamorphic region, the insulating layer is formed on the first electrode and the second electrode, the organic semiconductor material layer, The first region of the metamorphic region and the second region of the metamorphic region, and the control electrode is formed on the insulating layer. The electronic device of claim 3, comprising a thin film transistor further comprising an insulating layer, the device comprising: the control electrode for forming a gate electrode, the insulating layer for forming a gate insulating layer The first electrode and the second electrode for forming a source/drain electrode, and the organic semiconductor material layer between the first electrode and the second electrode for forming a channel formation region. A substrate for forming an image display device, the substrate comprising a plurality of electronic devices such as claim 3 arranged in a two-dimensional matrix along a first direction and a second direction. An image display device comprising the substrate for forming an image display device as claimed in claim 17. A method for fabricating an electronic device, the method comprising: Forming an organic semiconductor material layer comprising an organic semiconductor material on a substrate body; then patterning the organic semiconductor material layer; forming a first electrode and a second electrode on the organic semiconductor material layer; and then following the The second side and the fourth side of the organic semiconductor material layer remove a portion of the organic semiconductor material layer, and the patterned organic semiconductor material layer is parallel to one of the first electrode and the second electrode extending in a direction When the side is regarded as a first side and a third side, the side connecting the first side and the third side is regarded as the second side and the fourth side. A method for fabricating an electronic device, the method comprising: forming at least a first electrode, a second electrode, and a layer of an organic semiconductor material comprising an organic semiconductor material on a substrate body; and then patterning the organic semiconductor material Forming a first side and a third side having a direction parallel to the first electrode and the second electrode extending, and connecting the first side and the second side of the third side and a fourth One of the organic semiconductor material layers; and then removing a portion of the organic semiconductor material layer along the second side and the fourth side of the organic semiconductor material layer.