WO2014115515A1

WO2014115515A1 - Electronic device and manufacturing method thereof, and formation method of laminated structure

Info

Publication number: WO2014115515A1
Application number: PCT/JP2014/000193
Authority: WO
Inventors: Norihito Kobayashi; Eri IGARASHI; Masakazu Muroyama
Original assignee: Sony Corporation
Priority date: 2013-01-28
Filing date: 2014-01-16
Publication date: 2014-07-31
Also published as: JP2014146637A; TW201431146A

Abstract

There is provided a formation method of a laminated structure, including forming a laminated structure formed from, from a base (10) side, an organic insulating material layer (15) and a polycrystalline organic semiconductor material layer (16) by coating and drying on the base a solution in which an organic semiconductor material and an organic insulating material are dissolved in a solvent, in which the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3.

Description

ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF, AND FORMATION METHOD OF LAMINATED STRUCTURE

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of Japanese Priority Patent Application JP 2013-012927 filed January 28, 2013, the entire contents of which are incorporated herein by reference.

The present disclosure relates to an electronic device and manufacturing method thereof, and a formation method of a laminated structure.

In the related art, an inorganic semiconductor material represented by silicon is used as an active layer in an electronic device, such as a field effect transistor. However, in the manufacturing of an electronic device having an active layer formed from an inorganic semiconductor material (below, sometimes referred to as "inorganic electronic device" for convenience), vacuum processing or heat treatment at high temperatures is necessary, and large amounts of energy are consumed. In addition, the types of substrate able to be used for the necessary heat treatment at high temperatures are limited, and expensive capital investment is necessary for manufacturing. Furthermore, because the inorganic semiconductor material is hard and fragile, there is a problem that the durability with respect to bending or tensile stress is low.

In recent years an electronic device (below, sometimes referred to as an "organic electronic device") including a semiconductor film (active layer) formed from an organic semiconductor material has drawn attention. Since it is possible to form the semiconductor film of the organic electronic device at lower temperatures than in an inorganic electronic device, it is possible to form a semiconductor film on a plastic, or similar, substrate having low heat resistance, and possible to manufacture an electronic device having flexibility. In addition, because the organic semiconductor material is soluble in a solvent, it is possible to form the semiconductor film based on a spin coating method or the like, there is an advantage of increasing the area of the semiconductor film, and it is possible to achieve a cost decrease in manufacturing of the electronic device. Furthermore, because it is possible to control the characteristics of the semiconductor film through substituent control of the organic semiconductor material, it is possible to achieve improved multifunctionality and increased functionality of the electronic device.

Typically, an organic semiconductor material is unstable in the atmosphere or at high temperature compared to an inorganic semiconductor material. In addition, many organic semiconductor materials are known to decompose due to reaction between the material itself and oxygen. For these reasons, it is said that deterioration of the characteristics in an organic electronic device occurs easily.

In addition, it is difficult to obtain uniformity of characteristics in the surface in a semiconductor film formed based on a spin coating method using a solution in which the organic semiconductor material is dissolved in a solvent. This is thought to be a cause of coating unevenness during forming the semiconductor film based on spin coating.

In order to resolve the problems such an organic electronic device has, use of a dioxaanthanthrene-based compound such as 6,12-dioxaanthanthrene (so-called peri-xanthenoxanthene,. 6,12-dioxaanthanthrene, sometimes referred to as "PXX" for short) as an organic semiconductor material is known from [PTL 1]. PXX is stable in the atmosphere, and has superior heat resistance. Also, [PTL 1] further discloses a method of collectively forming a gate insulating layer formed from a polymer insulating material and an organic semiconductor material layer formed from PXX on the gate insulating layer based on spontaneous phase separation, through coating a solution including PXX and the polymer insulating material on a gate electrode provided on a base material.

In addition, although PXX is not used as the organic semiconductor material, a method is known from [PTL 2] of forming a thin film having two continuous phases based on a mixed solvent of the organic semiconductor material and an organic bonding agent.

International Publication No. 2012/132674 Japanese Unexamined Patent Application Publication No. 2004-525501

Summary

Incidentally, the present inventors have determined through thorough research that there are cases where the problem described below arises in the collective formation method of a gate insulating layer formed from a polymer insulating material and an organic semiconductor material formed from PXX based on spontaneous phase separation disclosed in [PTL 1]. That is, as shown in Fig. 5A, there are cases in which an abnormal phenomenon occurs where one thin film transistor (TFT) shows both a turn-on voltage and an on current. Moreover, such an abnormal phenomenon is referred to as "generating a parasitic transistor". Here, the curve "A" in Fig. 5A is a curve showing the changes in the absolute value | -I_d | of a drain current with respect to a gate-source potential V_gs, and curve "B" is a curve showing changes in the one-half power of the absolute value | -I_d | of the drain current with respect to the gate-source potential V_gs. Then, because the threshold voltage of a transistor causing the generation of a parasitic transistor does not become fixed, variations in the behavior of the transistor occur. The cross-section of an organic semiconductor layer of a transistor in which the parasitic transistor is generated was examined in detail, and the presence of the following three regions was determined, as shown in the microscope photographs in Fig. 6:
(1) region-1 in which the organic semiconductor layer (represented by "OSC" in Fig. 6) and the polymer insulating material layer (represented by "Topas" in Fig. 6) have a clear two-layer structure
(2) region-2 in which the organic semiconductor material layer and the polymer insulating layer form a mixed layer without the presence of a clear boundary therebetween
(3) region-3 in which the organic semiconductor layer is directly formed on the base (represented by "iso-DAP" in Fig. 6) without a polymer insulating layer being formed.
Then, although a curve showing changes in the drain current (-I_d) with respect to the gate-source potential V_gs is shown in Fig. 5B, it is determined that the threshold voltage greatly shifted to the positive, and the off-current is extremely high in the region-3, as shown by the curve "A" in Fig. 5B. Moreover, the curve "B" shown in Fig. 5B is the data in the region-1 and the region-1 shows normal transistor behavior. Moreover, the PXX configuring the organic semiconductor layer, specifically, is formed from 3,9-bis(p-ethylphenyl)peri-xanthenoxanthene, and the polymer insulating material layer is formed from, specifically, a cycloolefin copolymer (COC) and more specifically formed from TOPAS (manufactured by Topas Advanced Polymers GmbH, registered trademark), and film formation is performed by dissolving an organic semiconductor material and a polymer insulating material in an aromatic hydrocarbon solvent, such as toluene and xylene.

Accordingly, it is desirable to provide a manufacturing method of an electronic device enabling suppressing the occurrence of an abnormal phenomenon such as generating a parasitic transistor, and a formation method of a laminated structure, and an electronic device obtained based on the manufacturing method of the electronic device.

According to a first form of the present disclosure, there is provided a formation method of a laminated structure including forming a laminated structure formed from, from a base side, an organic insulating material layer and a polycrystalline organic semiconductor material layer by coating and drying on the base a solution in which an organic semiconductor material and an organic insulating material are dissolved in a solvent, where a mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3. Moreover, that the mass ratio of (organic insulating material / organic semiconductor material) is greater than 1 and less than 3 signifies that 1 < M₂ / M₁ < 3 is satisfied when the mass of the organic semiconductor material is M₁ and the mass of the organic insulating material is M₂ per unit mass of the solution. The same applies below.

According to a second form of the disclosure, there is provided a formation method of a laminated structure including forming a laminated structure formed from, from a base side, an organic insulating material layer and a polycrystalline organic semiconductor material layer by coating and drying on the base a solution in which an organic semiconductor material and an organic insulating material are dissolved in a mixed solvent, where a boiling point of a first solvent of the mixed solvent is 150 degrees Celsius or lower and a boiling point of a second solvent is greater than 150 degrees Celsius, and a mass ratio of the (first solvent / second solvent) is from (10/1) to (0/1).

According to a first or fourth form of the present disclosure, there is provided a manufacturing method of an electronic device including forming an insulating film over an entire surface of a base material after a control electrode is formed on the base material; next forming an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer on the insulating film; thereafter forming a first electrode and a second electrode on the active layer extension portion.

According to a second or fifth form of the present disclosure, there is provided a manufacturing method of an electronic device including forming an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer on an insulating film after the insulating film is formed on a base material; next forming an insulating layer over an entire surface after a first electrode and a second electrode are formed on the active layer extension portion; and further forming a control electrode on the insulating layer opposed to the active layer.

According to a third or a sixth form of the present disclosure, there is provided a manufacturing method of an electronic device including forming an insulating film on a base material; next forming an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer on the insulating film; and thereafter forming an electrode on the active layer extension portion.

Then, according to the first, second or third form of the present disclosure, the manufacturing method of an electronic device includes forming the organic insulating material layer and the polycrystalline semiconductor material layer from the insulating film side by coating and drying a solution in which the organic semiconductor material and the organic insulating material layer are dissolved in a solvent on the insulating film, where the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3.

In addition, according to the fourth, fifth or sixth forms of the present disclosure, the manufacturing method of an electronic device includes forming, from the insulating film side, an organic insulating material layer and a polycrystalline organic semiconductor material layer by coating and drying on the insulating film a solution in which an organic semiconductor material and an organic insulating material are dissolved in a mixed solvent, where a boiling point of a first solvent of the mixed solvent is 150 degrees Celsius or lower and a boiling point of a second solvent is greater than 150 degrees Celsius, and a mass ratio of the (first solvent / second solvent) is from (10/1) to (0/1).

According to the first or fourth forms of the present disclosure, the electronic device includes a control electrode formed on a base material, an insulating film covering the base material and the control electrode, an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer formed on the insulating film, and a first electrode and a second electrode formed on the active layer extension portion.

According to the second or fifth forms of the present disclosure, the electronic device includes an insulating film formed on a base material, an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material formed on the insulating film, a first electrode and a second electrode formed on the active layer extension portion, an insulating layer formed on the active layer, the first electrode and the second electrode, and a control electrode formed on the insulating layer opposed to the active layer.

According to the third or sixth form of the present disclosure, the electronic device includes an insulating film formed on a base material; an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material formed on the insulating film; and an electrode formed on the active layer extension portion.

Then, according to the first, second or third forms of the present disclosure, it is preferable that the organic insulating material layer and the polycrystalline organic semiconductor material layer of the electronic device be formed by coating and drying on the insulating film a solution in which the organic semiconductor material and the organic insulating material layer are dissolved in a solvent, where the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3.

In addition, in the electronic device according to the fourth, fifth or sixth forms of the present disclosure, it is preferable that the organic insulating material layer and the polycrystalline organic semiconductor material layer be formed by coating and drying on the insulating film a solution in which an organic semiconductor material and an organic insulating material are dissolved in a mixed solvent, where a boiling point of a first solvent of the mixed solvent is 150 degrees Celsius or lower and a boiling point of a second solvent is greater than 150 degrees Celsius, and a mass ratio of the (first solvent / second solvent) is from (10/1) to (0/1).

In the formation method of a laminated structure according to the first form of the present disclosure, the manufacturing method of an electronic device according to the first, second or the third forms of the present disclosure, and the electronic device according to the first, second or third form of the present disclosure, the mass ratio of the (organic insulating material / organic semiconductor material) is stipulated, and in the formation method of a laminated structure according to the second form of the present disclosure, the manufacturing method of an electronic device according to the fourth, fifth or sixth forms of the present disclosure, and the electronic device according to the fourth, fifth or sixth forms of the present disclosure, the mass ratio and the boiling points of the (first solvent) / (second solvent) are stipulated. As a result, it is possible to suppress an abnormal phenomenon such as generating a parasitic transistor.

Fig. 1A is a schematic partial cross-sectional view of a base material or the like for describing the manufacturing method of an electronic device and the formation method of a laminated structure of Example 1, Figs. 1B is a schematic partial cross-sectional view of a base material or the like for describing the manufacturing method of an electronic device and the formation method of a laminated structure of Example 1, and Fig. 1C is a schematic partial cross-sectional view of a base material or the like for describing the manufacturing method of an electronic device and the formation method of a laminated structure of Example 1. Figs. 2A is a schematic partial cross-sectional view of a base material or the like for describing the manufacturing method of an electronic device and the formation method of a laminated structure of Example 3, Figs. 2B is a schematic partial cross-sectional view of a base material or the like for describing the manufacturing method of an electronic device and the formation method of a laminated structure of Example 3, and Figs. 2C is a schematic partial cross-sectional view of a base material or the like for describing the manufacturing method of an electronic device and the formation method of a laminated structure of Example 3. Fig. 3 is a schematic partial cross-sectional view of an electronic device of Example 6. Fig. 4 is a graph showing the diffraction intensity according to X-ray diffraction analysis of the organic semiconductor material layer configuring the electronic device of Example 1. Fig. 5A is a graph showing changes in the drain current with respect to a gate-source potential V_gs in which one thin film transistor shows the generation of a parasitic transistor such as both a turn-on voltage and an on current in an electronic device of the related art, and Fig. 5B is a graph showing a curve showing changes in a drain current (-I_d) with respect to a gate-source potential V_gs in a state in which a parasitic transistor is generated. Fig. 6 is a microscope photograph of a cross-section of an organic semiconductor layer of a thin film transistor in which a parasitic transistor is generated.

Below, the present disclosure will be described based on the examples with reference to the diagrams; however, the present disclosure is not limited to the examples, and examples of various numerical values or materials are given in the embodiments. Further, the description will be performed in the following order.
1. Description generally relating to an electronic device according to the first to sixth forms of the present disclosure, a manufacturing method of an electronic device according to the first to sixth forms of the present disclosure and a formation method of a laminated structure according to the first and second forms of the present disclosure.
2. Embodiment 1 (electronic device according to the first and third forms of the present disclosure, manufacturing method of an electronic device according to the first and third forms of the present disclosure, and formation method of a laminated structure according to the first form of the present disclosure)
3. Embodiment 2 (electronic device according to the second and third forms of the present disclosure, manufacturing method of an electronic device according to the second and third forms of the present disclosure, and formation method of a laminated structure according to the first form of the present disclosure)
4. Embodiment 3 (electronic device according to the fourth and sixth forms of the present disclosure, manufacturing method of an electronic device according to the fourth and sixth forms of the present disclosure, and formation method of a laminated structure according to the second form of the present disclosure)
5. Embodiment 4 (electronic device according to the fifth and sixth forms of the present disclosure, manufacturing method of an electronic device according to the fifth and sixth forms of the present disclosure, and formation method of a laminated structure according to the second form of the present disclosure)
6. Embodiment 5 (modification of Embodiments 3 and 4)
7. Embodiment 6 (electronic device according to the third and sixth forms of the present disclosure, manufacturing method of an electronic device according to the third and sixth forms of the present disclosure, and formation method of a laminated structure according to the first and second form of the present disclosure), others
(Description Generally Relating to Electronic Device According to First to Sixth Forms of Present Disclosure, Manufacturing Method of Electronic Device According to First to Sixth Forms of Present Disclosure and Formation Method of Multilayer Structure According to First and Second Forms of Present Disclosure)

The electronic device according to the first form of the present disclosure and the manufacturing method of an electronic device according to the first form of the present disclosure collectively may be simply referred to below as the "first form of the present disclosure", the electronic device according to the second form of the present disclosure and the manufacturing method of an electronic device according to the second form of the present disclosure collectively may be simply referred to below as the "second form of the present disclosure", the electronic device according to the third form of the present disclosure and the manufacturing method of an electronic device according to the third form of the present disclosure collectively may be simply referred to below as the "third form of the present disclosure", the electronic device according to the fourth form of the present disclosure and the manufacturing method of an electronic device according to the fourth form of the present disclosure collectively may be simply referred to below as the "fourth form of the present disclosure", the electronic device according to the fifth form of the present disclosure and the manufacturing method of an electronic device according to the fifth form of the present disclosure collectively may be simply referred to below as the "fifth form of the present disclosure", and the electronic device according to the sixth form of the present disclosure and the manufacturing method of an electronic device according to the sixth form of the present disclosure collectively may be simply referred to below as the "sixth form of the present disclosure".

The formation method of a laminated structure according to the first form of the present disclosure, and the first form of the present disclosure, the second form of the present disclosure or the third form of the present disclosure may employ a mode in which the organic semiconductor material is formed from 6,12-dioxaanthanthrene (PXX) or a derivative thereof, and the organic insulating material is formed from a cycloolefin copolymer (COC).

The formation method of a laminated structure according to the second form of the present disclosure, and the fourth form of the present disclosure, the fifth form of the present disclosure, and the sixth form of the present disclosure may employ a form in which the first solvent is ortho-xylene, and the second solvent is 1-methylnaphthalene. Then, the formation method of a laminated structure of the second form of the present disclosure, and the fourth form of the present disclosure, the fifth form of the present disclosure and the sixth form of the present disclosure including such mode may employ a mode in which the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3, and furthermore, the organic semiconductor material is formed from 6,12-dioxaanthanthrene (PXX) or a derivative thereof, and the organic insulating material is formed from a cycloolefin copolymer (COC).

Here, examples of the cycloolefin copolymer (COC) specifically include TOPAS (manufactured by Topas Advanced Polymers GmbH, registered trademark), ARTON (manufactured by JSR Corporation, registered trademark), and ZEONOR (Zeon Japan Co., Ltd., registered trademark).

In addition, examples of the PXX derivative include compounds represented by general formula (1), compounds represented by general formula (2), compounds represented by general formula (3), compounds represented by general formula (4), compounds having a structure represented by general formula (4), where R is a substituent other than an alkyl group, compounds represented by general formula (5), compounds represented by general formula (6), compounds having a structure represented by general formulae (5) or (6), where R is a substituent other than an alkyl group, compounds having a structure represented by general formulae (4), (5) or (6), where R is an alkyl group, and R is substituted with a plurality of phenyl groups, and compounds represented by general formula (7).

where, R is an alkyl group, irrespective of whether linear or branched.

where, R is an alkyl group, irrespective of whether linear or branched.

where, R is an alkyl group, irrespective of whether linear or branched.

where R is an alkyl group, and the number of R's is 2 to 5.

where R is an alkyl group, and the number of R's is 1 to 5.

where R is an alkyl group, and the number of R's is 1 to 5.

where, A1 and A2 are represented by formula (8) below.

where R is an alkyl group or another substituent, and the number of R's is 1 to 5.

More specifically, examples of the PXX derivative include the PXX derivatives represented by the formulae (11) to (19) below; however, the disclosure is not limited thereto.

The electronic device in the first to sixth forms of the present disclosure has a so-called three-terminal structure. Alternatively, the electronic device in the third and sixth forms of the present disclosure has a two-terminal structure. Then, the electronic device having a three-terminal structure is configured by, for example, a field effect transistor, and more specifically a thin film transistor (TFT); or is configured by a light emitting element. That is, it is possible to configure a light emitting element (organic light emitting element, organic light emitting transistor) in which the active layer emits according to the application of a voltage to a control electrode, a first electrode and a second electrode. In these electronic devices, a current flowing in the active layer from the first electrode towards the second electrode is controlled according to a voltage applied to the control electrode. Here, in the light emitting element, the organic semiconductor material configuring the active layer has a light emitting function based on accumulation of a load due to modulation based on a voltage applied to the control electrode or recombination of injected electrons and positive holes (hole), it is possible to modulate the light emission intensity in proportion to the absolute value of current flowing from the first electrode to the second electrode according to the voltage applied to the control electrode and the voltage applied between the first electrode and the second electrode. Moreover, whether or not the electronic device exhibits a function as a field effect transistor or functions as a light emitting element depends on the state of voltage application (bias) to the first electrode and the second electrode. Firstly, a current flows from the first electrode to the second electrode by modulating the control electrode on the addition of a bias in a range in which electron injection from the second electrode does not occur. This is the transistor operation. Meanwhile, electron injection begins when the bias to the first electrode and the second electrode is increased on accumulation of sufficient positive holes, and light is emitted through recombination with the positive holes. In addition, examples of the electronic device having a two-terminal structure include photoelectric conversion elements in which a current flows between a first electrode and a second electrode according to irradiation of light on an active layer. In a case of configuring a photoelectric conversion element from the electronic device, it is possible to configure, specifically, a solar cell, image sensor or light sensor through the photoelectric conversion element. Alternatively, examples may include a light emitting diode (LED), and may configure an organic electroluminescence element (organic EL element), and may be caused to function as a chemical substance sensor, a gas sensor or a bio-sensor. Moreover, it is possible to also configure the photoelectric conversion element from an electronic device having a three-terminal structure. In this case, application of a voltage to the control electrode may be not performed or may be performed. In the latter case, it is possible to perform modulation of the current flowing through application of a voltage to the control electrode.

In addition, it is possible to obtain a capacitor through the formation method of a laminated structure according to the first or second form of the present disclosure. Specifically, for example, by forming a laminated structure formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer on an electrode formed from an organic semiconductor material or a metallic material, it is possible to obtain a capacitor formed from a laminated body of an organic insulating material layer and a polycrystalline organic semiconductor material layer.

In the case of configuring a semiconductor device from an electronic device of the disclosure, examples of the semiconductor device include, specifically, a bottom gate/top contact-type FET and a top gate/top contact-type FET. That is, it is possible to obtain a bottom gate/top contact-type FET with the first and fourth forms of the present disclosure, and it is possible to obtain a top gate/top contact-type FET with the second and fifth forms of the present disclosure.

That is, in a case of configuring the semiconductor device from a bottom gate/top contact-type field effect transistor (FET), the bottom gate/bottom contact-type FET includes,
(A) a gate electrode (corresponding to a control electrode) formed on a base material,
(B) a gate insulating layer formed on the gate electrode and the base material,
(C) a channel formation region and a channel formation region extension portion formed by an organic semiconductor material layer, and formed on the gate insulating layer, and
(D) source/drain electrodes (corresponding to the first electrode and the second electrode) formed on the channel formation region extension portion.
Moreover, the gate insulating layer is formed, from the gate electrode side, from two layers which are an insulating film and an organic insulating material layer.

In addition, in the case of configuring the semiconductor device from a top gate/top contact-type FET, the top gate/top contact-type FET includes
(A) an insulating film formed on a base material,
(B) a channel formation region and a channel formation region extension portion formed by an organic insulating material layer and a polycrystalline organic semiconductor material layer formed on the insulating layer,
(C) a source/drain electrode (corresponding to the first electrode and the second electrode) formed on the channel formation region extension portion.
(D) a gate insulating layer (corresponding to the insulating layer) formed on the source/drain electrode and the channel formation region, and
(E) a gate electrode (corresponding to a control electrode) formed on the gate insulating layer.

Here, the base material or base may be configured from a silicon oxide based material (for example, SiO_X, spin on glass (SOG), or silicon oxynitride (SiON)); silicon nitride (SiN_Y); a metal oxide high dielectric insulating material such as aluminum oxide (Al₂O₃) or HfO₂; a metal oxide or a metal salt. In a case of configuring the base material from these materials, the base material may be formed on a support (or above a support) appropriately selected from the following example materials. That is, examples of the support, or of the base material other than the above-described base material include polymethylmethacrylate (PMMA) or polyvinyl alcohol (PVA), polyvinyl phenol (PVP), polyethersulfone (PES), polyimide, polycarbonate (PC), polyethylene terephthalate (PET), polyethelene naphthalate (PEN), an organic polymers illustrate by polyimide (having a polymer material form such as a plastic film, plastic sheet or plastic substrate having flexibility and configured from a polymer material); alternatively, examples include a natural mineral-based insulating material such as mica, a metallic semiconductor material and a molecular semiconductor material. If such a base material configured from a polymer material having flexibility is used, it is possible to attach the electronic device or integrate the device with, for example, an image display device (display device) or electronic equipment having a curved shape. Alternatively, examples of the base material include various glass substrates, various glass substrates with an insulating material layer formed on the surface, a quartz substrate, a quartz substrate with an insulating material layer formed on the surface, a silicon substrate with an insulating material layer formed on the surface, or a conductive substrate with an insulating material layer formed on the surface (a substrate formed from a metal such as gold, aluminum or stainless steel, or an alloy; a substrate formed from highly oriented graphite). A suitable material may be selected from the above-described materials as the support with electrical insulating properties. Other examples of the support include a conductive substrate (substrate formed from a metal such as gold or aluminum, substrate formed from highly oriented graphite, substrate formed from stainless steel). In addition, although the electronic device is provided on the support member according to the configuration and structure of the electronic device, it is possible to also configure the support member from the above-described materials.

In addition, examples of the base in the formation method of the laminated structure according to the first or second form of the present disclosure, additionally, examples of the material configuring the insulating film in the first to sixth forms of the present disclosure include organic insulating materials with a contact angle with water of 55 degrees, and specifically include iso-DAP, PVP-RSiCl₃, materials in which PVP and a silane coupling agent are bonded, and DAP.

Embodiments of materials configuring the control electrode, the first electrode, the second electrode, the gate electrode, the source/drain electrode, or the wirings (below, collectively referred to as "control electrode or the like") include conductive materials such as metals such as platinum (Pt), gold (Au), paladium (Pd), chromium (Cr), nickel (Ni), aluminum (Al), silver (Ag), tantalum (Ta), tungsten (W), copper (Cu), titanium (Ti), indium (In), tin (Sn), iron (Fe), cobalt (Co), zinc (Zn), magnesium (Mg), manganese (Mn), ruthenium (Rh), rubidium (Rb), molybdenum (Mo), or alloys including these metal elements, conductive particles formed from these metals, conductive particles of alloys including these metals, polysilicon containing impurities, or carbon-based materials, and a laminated structure of layers including these elements. Furthermore, examples of materials configuring the control electrode or the like include poly(3,4-ethylene dioxythiophene)/polystyrene sulfonate (PEDOT/PSS) or organic materials (conductive polymers) such as TTF-TCNQ and polyaniline. The material configuring the control electrode or the like may be the same material or may be a different material.

The formation method of the control electrode or the like depends on the material configuring the control electrode or the like; however, examples include a physical vapor-phase growth method (PVD method); a pulse laser deposition method (PLD), an arc discharge method; various chemical vapor-phase growth methods (CVD method) including an MOCVD method; a spin coating method; various printing methods such as a screen printing method, an ink jet printing method, an offset printing method, a reverse offset printing method, a gravure method, a gravure offset printing method, a relief printing method, flexographic printing, or a microcontact printing method; various coating methods such as an air doctor coater method, a blade coater method, a rod coater method, a knife coater method, a squeeze coater method, a reverse roll coater method, a transfer roll coater method, a gravure coater method, a kiss coater method, a cast coater method, a spray coater method, a slit coater method, a slit orifice coater method, a calender coater method, a casting method, a capillary coater method, a bar coater method or an immersion method; a stamping method; a casting method; a method using a dispenser; a spray method; a lift off method; a shadow mask method and electroplating method or an electroless plating method, or a combination of any of the plating methods that is a combination of any of these with a patterning technology as necessary. Moreover, examples of the PVD method include (a) various vacuum deposition methods, such as an electron beam heating method, a resistance heating method, flash deposition, and a method of heating a crucible; (b) a plasma deposition method; (c) various sputtering methods such as a diode sputtering method, a direct current sputtering method, a direct current magnetron sputtering method, a high frequency sputtering method, a magnetron sputtering method, an ion beam sputtering method, and a bias sputtering method; and (d) various ion plating methods such as a DC (direct current method), an RF method, a multi-cathode, an activated reaction method, an electric field deposition method, a high frequency ion plating method, and a reactive ion plating method. In the case of forming the control electrode or the like based on an etching method, a dry etching method or a wet etching method may be employed, and examples of the dry etching method include, for example, ion mining or reactive ion etching (RIE). In addition, the control electrode and the like may be formed based on a laser ablation method, a mask deposition method, a laser transfer method or the like.

Embodiments of the material configuring the insulating layer (may be a portion of the gate insulating layer) include not only silicon oxide based materials; silicon nitride (SiN_Y); and inorganic insulating materials exemplified by metal oxide high dielectric insulating films such as aluminum oxide (Al₂O₃) or HfO₂, but also polymethylmethacrylate (PMMA); polyvinyl phenol (PVP); polyvinyl alcohol (PVA);polyimide; polycarbonate (PC); polyethylene terephthalate (PET); polystyrene; silanol derivatives (silane coupling agent) such as N-2(aminoethyl)3-aminoporpyltrimethoxysilane (AEAPTMS), 3-mercaptopropyl trimethoxysilane (MPTMS), and octadecyl trichlorosilane (OTS); and organic based insulating materials (organic polymers) exemplified by linear hydrocarbons having a function group capable of bonding the control electrode (gate electrode) with one terminal of octadecanethiol, dodecyl isocyanate or the like; or a combination of these may be used. Here, examples of the silicon oxide based material include silicon oxide (SiO_X), BPSG, PSG, BSG, AsSG, PbSG, silicon oxynitride (SiON), SOG (spin on glass), and low dielectric constant materials (for example, polyarylether, cycloperfluorocarbon polymer and benzocyclobutene, cyclic fluororesins, amorphous fluororesins (for example, CYTOP manufactured by Asahi Glass Co., Ltd.), polytetrafluoroethylene, fluorinated aryl ethers, fluorinated polyimides, amorphous carbon, organic SOG). The insulating layer may be formed by any of the various above-described PVD methods; various CVD methods; a spin coating method; the various above-described printing methods; the various above-described coating methods; an immersion method; a casting method; a sol-gel method; an electrodeposition method; a shadow mask method and a spray method.

Embodiments of the formation method of the active layer and the active layer extension portion, or the channel formation region and the channel formation extension portion include a wet process from any of the above-described various printing methods; various coating methods; methods using a dispenser; a spin coating method and a spray method.

Embodiments of a device to which the electronic device of the present disclosure may be combined include, for example, an image display device. Here, examples of the image display device include a so-called desktop personal computer, a notebook personal computer, a mobile personal computer, a PDA (personal digital assistant), a portable telephone, a game device, a mobile device, a vehicle-mounted device, an electronic book, electronic paper such as an electronic newspaper, a sign board, a poster, a notice board such as a black board, a copy machine, rewritable paper as a substitute for printer paper, a calculator, a display portion of a domestic appliance, a card display portion of a point card or the like, an electronic advertisement, and various image display devices in an electronic POP or the like (for example, an organic electroluminescence display device, liquid crystal display device, a plasma display device, an electrophoresis display device, a cold cathode field emission display device, or the like), and may include various illumination devices. In addition, it is possible to apply the electronic device of the present disclosure to an RE-ID tag, an organic memory element and a logic circuit.

In a case of applying and using the electronic device to various image display devices and various electronic devices, a monolithic integrated circuit in which numerous electronic devices are integrated with a support member may be used, or each electronic device may be separated and individualized, and used as discrete products. In addition, the electronic device may be sealed with a resin.

Embodiment 1

Embodiment 1 relates to an electronic device according to the first and third forms of the present disclosure, and a manufacturing method thereof, and a formation method of a laminated structure according to the first form of the present disclosure. The electronic device of Embodiment 1 or Embodiments 2 to 5 described below is a three-terminal electronic device, and is a field effect transistor (FET), and more specifically a thin film transistor (TFT), in which a current flowing in the active layer from the first electrode towards the second electrode is controlled according to the voltage applied to the control electrode.

Specifically, the electronic device of Embodiment 1 or Embodiment 3 described below is an organic electronic device including, as shown in the schematic partial cross-sectional view in Fig. 1C, a control electrode 12 formed on a base material 10, an insulating film 13 covering the base material 10 and the control electrode 12, an active layer 16A and an active layer extension portion 16B formed from an organic insulating material layer 15 and a polycrystalline organic semiconductor material layer 16 formed on the insulating film 13, and a first electrode 17A and a second electrode 17B formed on the active layer extension portion 16B.

More specifically, the electronic device of Embodiment 1 or Embodiment 3 described below is configured from a semiconductor device formed from a bottom gate/bottom contact-type field effect transistor (FET), more specifically, a TFT, and the bottom gate/top contact-type FET (TFT) is a three-terminal electronic device including
(A) a gate electrode (corresponding to a control electrode) 12 formed on a base material 10,
(B) a gate insulating layer formed on the gate electrode 12 and the base material 10,
(C) a channel formation region 16A and a channel formation region extension portion 16B formed by an organic semiconductor material layer 16, and formed on the gate insulating layer, and
(D) source/drain electrodes (corresponding to the first electrode and the second electrode) 17A and 17B formed on the channel formation region extension portion 16B.
Here, the gate insulating layer is formed, from the gate electrode side, from two layers which are an insulating film 13 and an organic insulating material layer 15.

Alternatively, the electronic device of Embodiment 1 or Embodiments 2 to 6 described below is an organic electronic device including an insulating film 13 formed on a base material 10; an active layer 16A and an active layer extension portion 16B formed from an organic insulating material layer 15 and a polycrystalline organic semiconductor material 16 formed on the insulating film 13; and

electrodes

17A and 17B formed on the active layer extension portion 16B.

Then, in the electronic device of Embodiment 1 or the

Embodiments

2 and 6 described below, the organic insulating material layer 15 and the polycrystalline organic semiconductor material layer 16 are formed by coating and drying on the insulating film 13 a solution 14 in which an organic semiconductor material and an organic insulating material are dissolved, where the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3 (that is, 1 < M₂ / M₁ <3 is satisfied when the mass of the organic semiconductor material is M₁ per unit mass of the solution and the mass of the organic insulating material is M₂ per unit mass of the solution).

Here, in Embodiment 1 or Embodiments 2 to 6 described below, 6,12-dioxaanthanthrene (PXX) or a derivative thereof, specifically, 3,9-bis(p-ethylphenyl)peri-xanthenoxanthene (represented by "PXX-(C2Ph)₂") represented by the above-described formula (11) is used as the organic semiconductor material. In addition, a cycloolefin copolymer (COC), specifically TOPAS 6015 from Polyplastics Co., Ltd. shown in formula (21) below is used as the organic insulating material, and iso-DAP (diallyl phthalate) is used as the base (insulating film).

Furthermore, in Embodiment 1 or Embodiment 2 described below, a solution in which ortho-xylene and 1-methylnaphthalene are mixed at a mass ratio of 10/1 is used as the solvent dissolving the organic semiconductor material and the organic insulating material.

Below, the formation method of a laminated structure and the manufacturing method of an electronic device of Embodiment 1 are described with reference to Figs. 1A, 1B and 1C which are schematic partial cross-sectional views of a substrate or the like; however, the manufacturing method of an electronic device of Embodiment 1 or Embodiment 3 described below includes forming an insulating film 13 over the entire surface so as to cover the base material 10 and the control electrode (gate electrode) 12 after the control electrode (gate electrode) 12 is formed on the base material 10, next forming an active layer (channel formation region) 16A and an active layer extension portion (channel formation region extension portion) 16B formed from an organic insulating material layer 15 and a polycrystalline organic semiconductor material layer 16 on the insulating film 13, and thereafter forming a first electrode 17A and a second electrode 17B (source/

drain electrodes

17A and 17B) on the active layer extension portion (channel formation region extension portion) 16B. Alternatively, the manufacturing method of an electronic device includes forming an insulating film 13 on a base material 10; next forming an active layer 16A and an active layer extension portion 16B formed from an organic insulating material layer 15 and a polycrystalline organic semiconductor material layer 16 on the insulating film 13; and thereafter forming

electrodes

17A and 17B on the active layer extension portion 16B.

Moreover, in the description below, there are case where the term "gate electrode" is used in place of the term "control electrode", the term "source/drain electrode" in place of the terms "first electrode, second electrode", the term "channel formation region" is used place of the term "active layer", and the term "channel formation region extension portion" in place of the term "active layer extension portion".

Step-100

Specifically, first a gate electrode 12 is formed on a base material 10. Here, the base material 10 is configured from a glass substrate 11A, and an insulating material layer 11B formed from SiO₂ formed on the surface of the glass substrate 11A. Specifically, a resist layer (not shown) in which portions which are to form the gate electrode 12 are removed is formed on the insulating material layer 11B is formed based on a lithography technique. Thereafter, a titanium (Ti) layer (not shown) as an adhesion layer, and a gold (Au) layer as a gate electrode 12 are formed in this order over the entire surface using a vapor deposition method, and thereafter the resist layer is removed. Thus, a gate electrode 12 may be obtained based on a so-called lift off method. Moreover, it is also possible to form a gate electrode 12 on the insulating material layer 11B based on a printing method, and also possible to form the gate electrode 12 based on a combination of a PVD method and a patterning technology.

Step-110

Next, an insulating film 13 is formed covering the base material 10 and the gate electrode 12. That is, the insulating film 13 is formed over the entire surface. Specifically, the insulating film 13 formed from iso-DAP may be obtained by an iso-DAP solution being heated to 150 degrees Celsius after being coated on the base material 10 and the gate electrode 12 based on a slit coater method.

Step-120

Thereafter, a channel formation region 16A and channel formation region extension portion 16B formed from an organic insulating material layer 15 and a polycrystalline organic semiconductor material layer 16 are formed on the insulating film 13. Here, in Embodiment 1, a solution 14 in which an organic insulating material and an organic semiconductor material are dissolved in a solvent is coated (refer to Fig. 1A) and dried (refer to Fig. 1B) the insulating film 13 which is a base, where the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3. Thus, it is possible to collectively form a laminated structure formed from, from the base (insulating film) side, an organic insulating material layer 15 and a polycrystalline organic semiconductor material layer 16. Moreover, it is possible to perform coating of the solution 14 on the insulating film 13 based, for example, on a slit coater method, and drying may be performed, for example, in conditions of an air atmosphere at 120 degrees Celsius to 150 degrees Celsius for 20 to 30 minutes (more specifically, for example, conditions of an air atmosphere, 140 degrees Celsius, 20 minutes). Thereby, it is possible to obtain a laminated structure of an organic insulating material layer 15 and a polycrystalline organic semiconductor material layer 16 using the spontaneous separation phenomenon.

Step-130

Next, source/

drain electrodes

17A and 17B are formed to interpose the channel formation region 16A on the channel formation region extension portion 16B (refer to Fig. 1C). Specifically, a resist layer (not shown) in which parts which are to form the source/

drain electrodes

17A and 17B are removed is formed on the channel formation region 16A and channel formation extension portion 16B based on a lithography technique. Thereafter, a gold (Au) layer as the source/

drain electrodes

17A and 17B is formed over the entire surface using vacuum deposition, and thereafter the resist layer is removed. Thus, source/

drain electrodes

17A and 17B formed from gold (Au) may be obtained based on a so-called lift off method. Moreover, the source/

drain electrodes

17A, 17B are formed based on a printing method. Alternatively, when the gold (Au) layer is formed based on a PVD method, it is possible to form the source/

drain electrodes

17A and 17B without photo-lithography processing by covering the channel formation region extension portion 16B and the channel formation region 16A with a hard mask.

For example, in the manufacturing method of an image display device, continuing from this step, the image display portion (specifically, for example, an image display portion formed from a liquid crystal display element, an organic electroluminescence element or an electrophoresis display element, or a semiconductor light emitting element) may be formed based on an existing method on or above the TFT thus obtained. Even in each of the embodiments described below, after the manufacturing of the electronic device (TFT) is completed, it is possible to obtain an image display portion by passing through the same processes.

Step-140

Alternatively, it is possible to obtain a bottom gate/top contact-type FET (specifically, a TFT) by forming a passivation film (not shown) over the entire surface.

In Embodiment 1, electronic devices of Embodiment-1A, Comparative Embodiment-1A, Comparative Embodiment-1B and Comparative Embodiment-1C were prepared with the value of (M₂/M₁) set as in Table 1 below, and whether a parasitic transistor was generated and to what number was evaluated with respect to the number of transistors in the same plane. Although the results are printed together in Table 1, in a case where the value of (M₂/M₁) is "1) or lower (Comparative Embodiment-1A and Comparative Embodiment-1B), the generation of a parasitic transistor is recognized. Meanwhile, for Comparative Embodiment-1C in which the value of (M₂/M₁) is "3", the state of phase separation of the organic insulating material layer and the organic semiconductor material layer recognized as being insufficient. From the above evaluation results, it is possible to obtain an electronic device without the generation of a parasitic transistor, with a constant threshold voltage, without variation in behavior and with sufficient phase separation of the organic semiconductor material layer and the organic insulating material layer by satisfying 1 < M₂ / M₁ < 3 when the mass of the organic semiconductor material is M₁ and the organic insulating material is M₂. In addition, X-ray diffraction analysis (XRD) of the organic semiconductor material layer 16 configuring the electronic device of the Embodiment-1A is performed based on an Out-Of-Plane measurement method. Although the graph in Fig. 4 shows the diffraction intensity of the results, the organic semiconductor material layer 16 is confirmed as being polycrystalline.

Embodiment 2

Embodiment 2 relates to an electronic device according to the second and third forms of the present disclosure, and a manufacturing method thereof, and a formation method of a laminated structure according to the first form of the present disclosure.

Specifically, the electronic device of Embodiment 2 or Embodiment 4 described below is an organic electronic device including, as shown by the schematic partial cross-sectional view in Fig. 2D, an insulating film 13 formed on a base material 10, an active layer 16A and an active layer extension portion 16B formed from an organic insulating material layer 15 and a polycrystalline organic semiconductor material 16 formed on the insulating film 13, a first electrode 17A and a second electrode 17B formed on the active layer extension portion 16B, an insulating layer 18 formed on the active layer 16A, the first electrode 17A and the second electrode 17B, and a control electrode 12 formed on the insulating layer 18 opposed to the active layer 16A.

More specifically, the electronic device of Embodiment 2 or Embodiment 4 described below is configured from a semiconductor device formed from a top gate/top contact-type field effect transistor (FET), more specifically, a TFT, and the top gate/top contact-type FET (TFT) includes
(A) an insulating film 13 formed on a base material 10,
(B) a channel formation region 16A and a channel formation region extension 16B portion formed by an organic insulating material layer 15 and a organic semiconductor material layer 16 formed on the insulating layer 13,
(C) source/drain electrodes (corresponding to the first electrode and the second electrode) 17A and 17B formed on the channel formation region extension portion 16B.
(D) a gate insulating layer 18 (corresponding to the insulating layer) formed on the source/

drain electrodes

17A and 17B and the channel formation region 16A, and
(E) a gate electrode 12 (corresponding to a control electrode) 12 formed on the gate insulating layer 18.

Then, in the electronic device of Embodiment 2, the organic insulating material layer 15 and the polycrystalline organic semiconductor material layer 16 are formed by coating and drying on the insulating film 13 a solution 14 in which an organic semiconductor material and an organic insulating material are dissolved, where the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3 (that is, 1 < M₂ / M₁ <3 is satisfied when the mass of the organic semiconductor material is M₁ per unit mass of the solution and the mass of the organic insulating material is M₂ per unit mass of the solution).

Below, the formation method of a laminated structure and manufacturing method of an electronic device of Embodiment 2 is described with reference to Figs. 2A, 2B, 2C and 2D which are schematic partial cross-sectional views of a substrate or the like; however, the manufacturing method of an electronic device of Embodiment 2 or Embodiment 4 described below is a manufacturing method of an electronic device in which an active layer (channel formation region) 16A and an active layer extension portion (channel formation region portion) 16B formed from an organic insulating material layer 15 and a polycrystalline organic semiconductor material layer 16 are formed on an insulating film 13 after the insulating film 13 is formed on a base material 10, next forming an active layer (channel formation region) 16A, a first electrode 17A and a second electrode 17B (source/

drain electrodes

17A and 17B), and an insulating layer (gate insulating layer) 18 over the entire surface after the first electrode 17A and the second electrode 17B (source/

drain electrodes

17A and 17B) are formed on the active layer extension portion (channel formation region extension portion) 16B, and further forming a control electrode (gate electrode) 12 is formed opposed to the active layer (channel formation region) 16A on the insulating layer (gate insulating layer) 18. Alternatively, the manufacturing method of an electronic device includes forming an insulating film 13 on a base material 10; next forming an active layer 16A and an active layer extension portion 16B formed from an organic insulating material layer 15 and a polycrystalline organic semiconductor material layer 16 on the insulating film 13; and thereafter forming

electrodes

17A and 17B on the active layer extension portion 16B.

Step-200

Specifically, first an insulating film 13 is formed on a base material 10 (refer to Fig. 2A). Specifically, the insulating film 13 formed from iso-DAP using the same method as Embodiment 1 (Step-110) is formed on the insulating material layer 11B formed from SiO₂ formed on the surface of the glass substrate 11A.

Step-210

Thereafter, a channel formation region 16A and channel formation region extension portion 16B formed from an organic insulating material layer 15 and a polycrystalline organic semiconductor material layer 16 are formed on the insulating film 13 (refer to Fig. 2B). Specifically, by performing the same steps as (Step-120) of Embodiment 1, it is possible to collectively obtain a laminated structure of an organic insulating material layer 15 and a polycrystalline organic semiconductor material 16 by using a spontaneous phase separation phenomenon.

Step-220

Next, source/

drain electrodes

17A and 17B are formed to interpose the channel formation region 16A on the channel formation region extension portion 16B. Specifically, the same steps as (Step-130) of Embodiment 1 are performed.

Step-230

Thereafter, the gate insulating layer 18 is formed on the channel formation region 16A, and the source/drain electrodes 17A and 17, and a gate electrode 12 is further formed on the gate insulating layer 18 opposing the channel formation region 16A (refer to Fig. 2C). Specifically, the gate electrode 12 is formed in the same manner as (Step-100) of Embodiment 1 after a gate insulating layer 18 is formed from SiO₂ over the entire surface, for example, based on a PVD method.

Step-240

Alternatively, it is possible to obtain a top gate/top contact-type FET (specifically, a TFT) by forming a passivation film (not shown) over the entire surface.

Embodiment 3

Embodiment 3 relates to an electronic device according to the fourth and sixth forms of the present disclosure, and a manufacturing method thereof, and a formation method of a laminated structure according to the second form of the present disclosure. The electronic device of Embodiment 3, specifically, has substantially the same configuration and structure as the electronic device of Embodiment 1 shown in Fig. 1C. Therefore, detailed description thereof will not be made.

However, in the electronic device of Embodiment 3 or Embodiments 4 and 6 described below, the organic insulating material layer 15 and the polycrystalline organic semiconductor material layer 16 are formed by coating and drying on the insulating film 13 a solution in which an organic semiconductor material and an organic insulating material are dissolved in a mixed solvent with a mass ratio of (first solvent) / (second solvent) is (10/1) to (0/1), where the boiling point of the first solvent of the mixed solvent is 150 degrees Celsius or lower and the boiling point of the second solvent is greater than 150 degrees Celsius.

In addition, in the manufacturing method of an electronic device of Embodiment 3 or Embodiments 4 and 6 described below, an organic insulating material layer 15 and a polycrystalline organic semiconductor material layer 16 (laminated structure) are formed from the insulating film (base) side by coating and drying on the insulating film 13 which is a base a solution in which an organic semiconductor material and an organic insulating material are dissolved in a mixed solvent with a mass ratio of the (first solvent / second solvent) from (10/1) to (0/1), where the boiling point of the first solvent of the mixed solvent is 150 degrees Celsius or lower and the boiling point of a second solvent is greater than 150 degrees Celsius.

Specifically, in Embodiment 3 or Embodiments 4 and 6 described below, ortho-xylene (boiling point approximately 138 degrees Celsius) is used as the first solvent and 1-methylnaphthalene (boiling point approximately 240 degrees Celsius) is used as the second solvent.

Since the manufacturing method of an electronic device of Embodiment 3 may be a similar method to the manufacturing method of an electronic device of Embodiment 1 with the exception of the points of (Step-120) of Embodiment 1 substituted as written above, and a detailed description will not be made.

In embodiment 3 or Embodiment 4 described below, M₂ / M₁ = 1 is satisfied when the mass of the organic semiconductor material (PXX-(C2Ph)₂) per unit mass of the solution is M₁, and the mass of the organic insulating material (TOPAS) is M₂. In addition, the mass ratio of (first solvent) / (second solvent) is shown in Table 2 below. Moreover, in Table 2, the mass ratio of the (first solvent) / (second solvent) is represented by "solvent mass ratio".

The electronic devices of Embodiment-3A, Embodiment-3B, Comparative Embodiment-3A and Comparative Embodiment-3B were prepared, and whether a parasitic transistor was generated and to what number was evaluated with respect to the number of transistors in the same plane. Although the results are printed together in Table 2, in a case where the value of the solvent mass ratio in Comparative Embodiment-3A and Comparative Embodiment-3B is greater than "10", the generation of a parasitic transistor is recognized. Meanwhile, in Embodiment-3A and Embodiment-3B in which the value of the solvent mass ratio is "10" or lower, it is possible to obtain an electronic device without the generation of a parasitic transistor, with a constant threshold voltage, and without variation in behavior. In addition, when X-ray diffraction analysis (XRD) of the organic semiconductor material layer 16 configuring the electronic device of the Embodiment-3A is performed, it is recognized that the organic semiconductor material layer 16 is polycrystalline.

Embodiment 4

Embodiment 4 relates to an electronic device according to the fifth and sixth forms of the present disclosure, and a manufacturing method thereof, and a formation method of a laminated structure according to the second form of the present disclosure. The electronic device of Embodiment 4, specifically, has substantially the same configuration and structure as the electronic device of Embodiment 2 shown in Fig. 2D. Therefore, detailed description thereof will not be made.

In addition, since the manufacturing method of an electronic device of Embodiment 4 may be a similar method to the manufacturing method of an electronic device of Embodiment 2 with the exception of the points of (Step-210) of Embodiment 2 substituted with the matter described in Embodiment 3, and a detailed description will not be made.

Embodiment 5

Embodiment 5 is a modification of Embodiments 3 and 4. In Embodiments 3 and 4, M₂ / M₁ = 1. Meanwhile, in Embodiment 5, M₂ / M₁ = 1.5. That is, in Embodiment 5, the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3. However, the organic semiconductor material, specifically, similarly to Embodiments 3 and 4, is formed from 6,12-dioxaanthanthrene (PXX) or a derivative thereof, and the organic insulating material is formed from a cycloolefin copolymer (COC). Except for the above points, since the electronic device and the manufacturing method thereof, and the manufacturing method of a laminated structure of Embodiment 5 are the same as the manufacturing method of an electronic device, and the manufacturing method of a laminated structure of Embodiments 3 and 4, detailed description will not be made. Also in Embodiment 5, it is possible to obtain an electronic device (a bottom gate/top contact-type TFT or a top gate/top contact-type TFT) without the generation of a parasitic transistor, with a constant threshold voltage, and without variation in behavior. Moreover, the number of parasitic transistors in the number of transistors 48 measured in the same plane is 0.

Embodiment 6

Embodiment 6 relates to an electronic device according to the third and sixth forms of the present disclosure, and a manufacturing method thereof, and a formation method of a laminated structure according to the first and second forms of the present disclosure. In Embodiment 1 to Embodiment 5, the electronic device is an electronic device having a three-terminal structure. Meanwhile, in Embodiment 6, the electronic device is an electronic device having a two-terminal structure.

The electronic device of Embodiment 6, as shown by the schematic partial cross-sectional view in Fig. 3, is an organic electronic device including an insulating film 23 formed on a base material 10; an active layer 26A and an active layer extension portion 26B formed from an organic insulating material layer 25 and a polycrystalline organic semiconductor material 26 formed on the insulating film 23; and

electrodes

27A and 27B formed on the active layer extension portion 26B. Moreover, the

electrodes

27A and 27B are formed so as to interpose the active layer 26A.

Then, in the electronic device of Embodiment 6, similarly to Embodiment 1 as previously described, the organic insulating material layer 25 and the polycrystalline organic semiconductor material layer 26 are formed by coating and drying a solution in which an organic semiconductor material and an organic insulating material are dissolved on the insulating film 23 that is a base, where the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3. Alternatively, the organic insulating material layer 25 and a polycrystalline organic semiconductor material layer 26, as previously described, similarly to Embodiment 3, are formed by coating and drying on the insulating film 23 that is a base a solution in which an organic semiconductor material and an organic insulating material are dissolved in a mixed solvent with a mass ratio of (first solvent / second solvent) of from (10/1) to (0/1), where the boiling point of the first solvent is 150 degrees Celsius or lower and the boiling point of the second solvent is greater than 150 degrees Celsius.

In addition, the manufacturing method of an electronic device of the Embodiment 6 includes forming an insulating film 23 on a base material 10; next forming an active layer 26A and an active layer extension portion 26B formed from an organic insulating material layer 25 and a polycrystalline organic semiconductor material layer 26 on the insulating film 23; and thereafter forming

electrodes

27A and 27B on the active layer extension portion 26B. Then, similarly to Embodiment 1, the organic insulating material layer 25 and the polycrystalline semiconductor material layer 26 are formed from the insulating film side by coating and drying on the insulating film 23 a solution in which the organic semiconductor material and the organic insulating material layer are dissolved in a solvent, where the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3. Alternatively, similarly to Embodiment 3, the organic insulating material layer 25 and the polycrystalline organic semiconductor material layer 26 are formed from the insulating film side by coating and drying on the insulating film 23 a solution in which an organic semiconductor material and an organic insulating material are dissolved in a mixed solvent in which a mass ratio of the (first solvent / second solvent) is from (10/1) to (0/1), where the boiling point of a first solvent of the mixed solvent is 150 degrees Celsius or lower and a boiling point of a second solvent is greater than 150 degrees Celsius.

Then, power is generated according to the illumination of light on the active layer 26A. That is, the electronic device of Embodiment 6 functions as a photoelectric conversion element or a solar cell. Alternatively, the active layer 26A functions as a light emitting element that emits light according to a voltage applied to the first electrode 27A and the second electrode 27B.

Alternatively, the electronic device of Embodiment 6 functions as a chemical material sensor formed from a two-terminal electronic device. Specifically, when a chemical substance to be detected is adsorbed to the active layer 26A, the electrical resistance value between the first electrode 27A and the second electrode 27B changes. Accordingly, by flowing a current between the first electrode 27A and the second electrode 27B, or applying a suitable voltage between the first electrode 27A and the second electrode 27B, and measuring the electrical resistance of the active layer 26A, it is possible to measure the amount (concentration) of a chemical substance adsorbed on the active layer 26A. Moreover, since the chemical substance achieves an adsorption equilibrium state in the active layer 26A, when time passes and the amount (concentration) of the chemical substance in the atmosphere in which the active layer 26A is placed changes, the equilibrium state also changes.

With the exception of the above points, the configuration and manufacturing method of the electronic device of the Embodiment 6 are basically the same as the configuration and structure of the electronic device described in Embodiment 1 or Embodiment 3 with the exception of not providing the control electrode and an insulating film, a detailed description will not be made. Since the electronic device of Embodiment 6 is manufactured by forming an insulating film 23, similarly to (Step-110) of Embodiment 1, on a glass substrate 11A configuring a base material 10, next executing the same steps as (Step-120) to (Step-130) of the Embodiment 1 or executing steps in which (Step-120) of Embodiment 1 in Embodiment 3 is substituted with the matter described in Embodiment 3, a detailed description will not be made.

Above, the present disclosure has been described based on preferred embodiments; however, the present disclosure is not limited to these embodiments. The specific structure of the dioxaanthanthrene-based compound is not limited to the embodiments, the structure and configuration, formation conditions and manufacturing conditions of the electronic device are also examples, and appropriate changes may be made. In a case of applying and using the electronic device of the present disclosure to various image display devices and various electronic devices, a monolithic integrated circuit in which numerous electronic devices are integrated with a support member may be used, or each electronic device may be separated and individualized, and used as discrete products.

Moreover, the present disclosure may take the configurations as below.
(A01) (Formation Method of Multilayer Structure: First Form)
A formation method of a laminated structure, including forming a laminated structure formed from, from a base side, an organic insulating material layer and a polycrystalline organic semiconductor material layer by coating and drying on the base a solution in which an organic semiconductor material and an organic insulating material are dissolved in a solvent, in which the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3.
(A02) The formation method of a laminated structure according to (A01), in which the organic semiconductor material is formed from of 6,12-dioxaanthanthrene or a derivative thereof, and the organic insulating material is formed from a cycloolefin copolymer.
(B01) (Formation Method of Multilayer Structure: Second Form)
A formation method of a laminated structure, including forming a laminated structure formed from, from a base side, an organic insulating material layer and a polycrystalline organic semiconductor material layer by coating and drying on the base a solution in which an organic semiconductor material and an organic insulating material are dissolved in a mixed solvent, where a boiling point of a first solvent of the mixed solvent is 150 degrees Celsius or lower and a boiling point of a second solvent is greater than 150 degrees Celsius, and a mass ratio of the (first solvent / second solvent) is from (10/1) to (0/1).
(B02) The formation method of a laminated structure according (B01), in which the first solvent is ortho-xylene, and the second solvent is 1-methylnaphthalene.
(B03) The manufacturing method of a laminated structure according to (B01) or (B02), in which the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3.
(B04) The formation method of a laminated structure according to (B03), in which the organic semiconductor material is formed from of 6,12-dioxaanthanthrene or a derivative thereof, and the organic insulating material is formed from a cycloolefin copolymer.
(C01) (Manufacturing Method of an Electronic Device: First Form)
A manufacturing method of an electronic device including forming an insulating film over an entire surface of a base material after a control electrode is formed on the base material; next forming an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer on the insulating layer; thereafter forming a first electrode and a second electrode on the active layer extension portion; in which, from the insulating layer side, the organic insulating material layer and the polycrystalline organic semiconductor layer are formed by coating and drying a solution on the insulating film in which the organic semiconductor material and the organic insulating material layer are dissolved in a solvent, where the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3.
(C02) (Manufacturing Method of an Electronic Device: Second Form)
A manufacturing method of an electronic device, including forming an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer on an insulating film after the insulating film is formed on a base material; next forming an insulating layer over an entire surface after a first electrode and a second electrode are formed on the active layer extension portion; and further forming a control electrode on the insulating layer opposed to the active layer, in which the organic insulating material layer and the polycrystalline organic semiconductor material layer are formed from the insulating film side by coating and drying on the insulating film a solution in which the organic semiconductor material and the organic insulating material are dissolved in a solvent, where the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3.
(C03) (Manufacturing Method of an Electronic Device: Third Form)
A manufacturing method of an electronic device including forming an insulating film on a base material; next forming an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer on the insulating film, thereafter forming an electrode on the active layer extension portion, in which the organic insulating material layer and the polycrystalline semiconductor material layer are formed from the insulating film side by coating and drying on the insulating film a solution in which the organic semiconductor material and the organic insulating material layer are dissolved in a solvent, where the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3.
(C04) The manufacturing method of an electronic device according to any one of (C01) to (C03), in which the organic semiconductor material is formed from 6,12-dioxaanthanthrene or a derivative thereof, and the organic insulating material is formed from a cycloolefin copolymer.
(D01) (Manufacturing Method of an Electronic Device: Fourth Form)
A manufacturing method or an electronic device, including forming an insulating film on an entire surface after a control electrode is formed on a base material; next forming an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer on the insulating film, and thereafter forming a first electrode and a second electrode on the active layer extension portion, in which the organic insulating material layer and the polycrystalline organic semiconductor material layer are formed from the insulating film side by coating and drying on the insulating film a solution in which the organic semiconductor material and the organic insulating material are dissolved in a mixed solvent, for which the boiling point of a first solvent of the mixed solvent is 150 degrees Celsius or lower and the boiling point of a second solvent is greater than 150 degrees Celsius, and where the mass ratio of the (first solvent / second solvent) is from (10 / 1) to (0 / 1).
(D02) (Manufacturing Method of an Electronic Device: Fifth Form)
A manufacturing method of an electronic device including forming an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer on an insulating film after the insulating film is formed on a base material; next forming an insulating layer over the entire surface after a first electrode and a second electrode are formed on the active layer extension portion; and further forming a control electrode on the insulating layer opposed to the active layer, in which the organic insulating material layer and the polycrystalline organic semiconductor material layer are formed from the insulating film side by coating and drying on the insulating film a solution, in which the organic semiconductor material and the organic insulating material are dissolved in a mixed solvent, for which the boiling point of a first solvent of the mixed solvent is 150 degrees Celsius or lower and the boiling point of a second solvent is greater than 150 degrees Celsius, and the mass ratio of the (first solvent / second solvent) is from (10 / 1) to (0 / 1).
(D03) (Manufacturing Method of an Electronic Device: Sixth Form)
A manufacturing method or an electronic device, including forming an insulating film on a base material; next forming an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer on the insulating film, and thereafter forming an electrode on the active layer extension portion, in which the organic insulating material layer and the polycrystalline organic semiconductor material layer are formed from the insulating film side by coating and drying on the insulating film a solution in which the organic semiconductor material and the organic insulating material are dissolved in a mixed solvent for which the boiling point of a first solvent of the mixed solvent is 150 degrees Celsius or lower and the boiling point of a second solvent is greater than 150 degrees Celsius, and the mass ratio of the (first solvent / second solvent) is from (10 / 1) to (0 / 1).
(D04) The manufacturing method of an electronic device according to any one of (D01) to (D03), in which the first solvent is ortho-xylene, and the second solvent is 1-methylnaphthalene.
(D05) The manufacturing method of an electronic device according to any one of (D01) to (D04) in which the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3.
(D06) The manufacturing method of an electronic device according to (D05) in which the organic semiconductor material is formed from 6,12-dioxaanthanthrene or a derivative thereof, and the organic insulating material is formed of a cycloolefin copolymer.
(E01) (Electronic Device: First Form)
An electronic device including a control electrode formed on a base material; an insulating film covering the base material and the control electrode; an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer formed on the insulating film, and a first electrode and a second electrode formed on the active layer extension portion; in which the organic insulating material layer and the polycrystalline organic semiconductor material layer are formed by coating and drying on the insulating layer a solution in which the organic semiconductor material and the organic insulating material are dissolved in a solvent, and the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3.
(E02) (Electronic Device: Second Form)
An electronic device including an insulating film formed on a base material; an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer formed on the insulating film; a first electrode and a second electrode formed on the active layer extension portion; an insulating layer formed on the active layer, the first electrode and the second electrode, and a control electrode formed on the insulating layer and opposed to the active layer; in which the organic insulating material layer and the polycrystalline organic semiconductor material layer are formed by coating and drying on the insulating film a solution in which the organic semiconductor material and the organic insulating material are dissolved, and the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3.
(E03) (Electronic Device: Third Form)
An electronic device, including an insulating film formed on a base material; an active layer formed from an organic insulating material layer and a polycrystalline organic semiconductor layer, and an active layer extension portion formed on the insulating film, and an electrode formed on the active layer extension portion, in which the organic insulating material layer and the polycrystalline organic semiconductor material layer are formed by coating and drying on the insulating film a solution in which the organic semiconductor material and the organic insulating material are dissolved in a solvent, and the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3.
(E04) The electronic according to any one of (E01) to (E03) in which the organic semiconductor material is formed from 6,12-dioxaanthanthrene or a derivative thereof, and the organic insulating material is formed of a cycloolefin copolymer.
(F01) (Electronic Device: Fourth Form)
An electronic device including a control electrode formed on a base material; an insulating film covering the base material and the control electrode; an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer formed on the insulating film, and a first electrode and a second electrode formed on the active layer extension portion, in which the organic insulating material layer and the polycrystalline organic semiconductor material layer are formed by coating and drying on the insulating layer a solution in which the organic semiconductor material and the organic insulating material are dissolved in a mixed solvent, where the boiling point of a first solvent of the mixed solvent is 150 degrees Celsius or lower and the boiling point of a second solvent is greater than 150 degrees Celsius, and the mass ratio of the (first solvent / second solvent) is from (10 / 1) to (0 / 1).
(F02) (Electronic Device: Fifth Form)
An electronic device including an insulating film formed on a base material; an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer formed on the insulating film; a first electrode and a second electrode formed on the active layer extension portion; an insulating layer formed on the active layer, the first electrode and the second electrode, and a control electrode formed on the insulating layer and opposed to the active layer, in which the organic insulating material layer and the polycrystalline organic semiconductor material layer are formed by coating and drying on the insulating film a solution in which the organic semiconductor material and the organic insulating material are dissolved in a mixed solvent, where the boiling point of a first solvent of the mixed solvent is 150 degrees Celsius or lower and the boiling point of a second solvent is greater than 150 degrees Celsius, and the mass ratio of the (first solvent / second solvent) is from (10 / 1) to (0 / 1).
(F03) (Electronic Device: Sixth Form)
An electronic device including an insulating film formed on a base material; an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer formed on the insulating film, and an electrode formed on the active layer extension portion, in which the organic insulating material layer and the polycrystalline organic semiconductor material layer are formed by coating and drying on the insulating layer a solution in which the organic semiconductor material and the organic insulating material are dissolved in a mixed solvent, where the boiling point of a first solvent of the mixed solvent is 150 degrees Celsius or lower and the boiling point of a second solvent is greater than 150 degrees Celsius, and the mass ratio of the (first solvent / second solvent) is from (10 / 1) to (0 / 1).
(F04) The electronic device according to any one of (F01) to (F03) in which the first solvent is ortho-xylene, and the second solvent is 1-methylnaphthalene.
(F05) The electronic device according to any one of (F01) to (F04) in which the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3.
(F06) The electronic device according to (F05) in which the organic semiconductor material is formed from 6,12-dioxaanthanthrene or a derivative thereof, and the organic insulating material is formed of a cycloolefin copolymer.

It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and alterations may occur depending on design requirements and other factors insofar as they are within the scope of the appended claims or the equivalents thereof.

10 Base Material
11A Glass Substrate
11B Insulating Material Layer
12 Gate Electrode (Control Electrode)
13 Insulating Film (Underlayer Of Gate Insulating Layer)
13' Insulating Film
14, 14' Solution in Which an Organic Semiconductor Material and an Organic Insulating Material are Dissolved in a Solvent
15 Organic Insulating Material Layer
16 Organic Semiconductor Material Layer
16A Channel Forming Region (Active Layer)
16B Channel Forming Region Extension Portion (Active Layer Extension Portion)
17A, 17B Source/Drain Electrode (First Electrode And Second Electrode)
18 Gate Insulation Layer
23 Insulating Film
25 Organic Insulating Material Layer
26 Organic Semiconductor Material Layer
26A Active Layer
26B Active Layer Extension Portion
27A, 27B Electrode

Claims

A formation method of a laminated structure, comprising:
forming a laminated structure formed from, from a base side, an organic insulating material layer and a polycrystalline organic semiconductor material layer by coating and drying on the base a solution in which an organic semiconductor material and an organic insulating material are dissolved in a solvent,
wherein the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3.
The formation method of a laminated structure according to claim 1, wherein the organic semiconductor material is formed from of 6,12-dioxaanthanthrene or a derivative thereof, and
the organic insulating material is formed from a cycloolefin copolymer.
A formation method of a laminated structure, comprising:
forming a laminated structure formed from, from a base side, an organic insulating material layer and a polycrystalline organic semiconductor material layer by coating and drying on the base a solution in which an organic semiconductor material and an organic insulating material are dissolved in a mixed solvent, in which a boiling point of a first solvent of the mixed solvent is 150 degrees Celsius or lower and a boiling point of a second solvent is greater than 150 degrees Celsius, and a mass ratio of the (first solvent / second solvent) is from (10/1) to (0/1).
The formation method of a laminated structure according to claim 3, wherein the first solvent is ortho-xylene, and
the second solvent is 1-methylnaphthalene.
A manufacturing method of an electronic device comprising:
forming an insulating film over an entire surface of a base material after a control electrode is formed on the base material; next forming an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer on the insulating film; thereafter forming a first electrode and a second electrode on the active layer extension portion;
wherein the organic insulating material layer and the polycrystalline organic semiconductor layer are formed from the insulating layer side by coating and drying on the insulating layer a solution in which the organic semiconductor material and the organic insulating material layer are dissolved in a solvent, in which the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3.
A manufacturing method of an electronic device, comprising:
forming an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer on an insulating film after the insulating film is formed on a base material; next forming an insulating layer over an entire surface after a first electrode and a second electrode are formed on the active layer extension portion; and further forming a control electrode on the insulating layer opposed to the active layer,
wherein the organic insulating material layer and the polycrystalline organic semiconductor material layer are formed from the insulating film side by coating and drying on the insulating film a solution in which the organic semiconductor material and the organic insulating material are dissolved in a solvent, and the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3.
A manufacturing method of an electronic device, comprising:
forming an insulating film on a base material; next forming an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer on the insulating film, thereafter forming an electrode on the active layer extension portion,
wherein the organic insulating material layer and the polycrystalline semiconductor material layer are formed from the insulating film side by coating and drying on the insulating film a solution in which the organic semiconductor material and the organic insulating material layer are dissolved in a solvent, and the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3.
The manufacturing method of an electronic device according to claim 5, wherein the organic semiconductor material is formed from of 6,12-dioxaanthanthrene or a derivative thereof, and
the organic insulating material is formed from a cycloolefin copolymer.
A manufacturing method or an electronic device, comprising:
forming an insulating film on an entire surface after a control electrode is formed on a base material; next forming an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer on the insulating film, and thereafter forming a first electrode and a second electrode on the active layer extension portion,
wherein the organic insulating material layer and the polycrystalline organic semiconductor material layer are formed from the insulating film side by coating and drying on the insulating film a solution in which the organic semiconductor material and the organic insulating material are dissolved in a mixed solvent, for which the boiling point of a first solvent of the mixed solvent is 150 degrees Celsius or lower and the boiling point of a second solvent is greater than 150 degrees Celsius, and the mass ratio of the (first solvent / second solvent) is from (10 / 1) to (0 / 1).
A manufacturing method of an electronic device comprising:
forming an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer on an insulating film after the insulating film is formed on a base material; next forming an insulating layer over an entire surface after a first electrode and a second electrode are formed on the active layer extension portion; and further forming a control electrode on the insulating layer opposed to the active layer, in which the organic insulating material layer and the polycrystalline organic semiconductor material layer are formed from the insulating film side by coating and drying on the insulating film a solution,
wherein the organic semiconductor material and the organic insulating material are dissolved in a mixed solvent, for which the boiling point of a first solvent of the mixed solvent is 150 degrees Celsius or lower and the boiling point of a second solvent is greater than 150 degrees Celsius, and the mass ratio of the (first solvent / second solvent) is from (10 / 1) to (0 / 1).
A manufacturing method or an electronic device, comprising:
forming an insulating film on a base material; next forming an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer on the insulating film, and thereafter forming an electrode on the active layer extension portion,
wherein the organic insulating material layer and the polycrystalline organic semiconductor material layer are formed from the insulating film side by coating and drying on the insulating film a solution in which the organic semiconductor material and the organic insulating material are dissolved in a mixed solvent in which the boiling point of a first solvent of the mixed solvent is 150 degrees Celsius or lower and the boiling point of a second solvent is greater than 150 degrees Celsius, and the mass ratio of the (first solvent / second solvent) is from (10 / 1) to (0 / 1).
The manufacturing method of an electronic device according to claim 9, wherein the first solvent is ortho-xylene, and
the second solvent is 1-methylnaphthalene.
The manufacturing method of an electronic device according to claim 9, wherein the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3.
The manufacturing method of an electronic device according to claim 13, wherein the organic semiconductor material is formed from 6,12-dioxaanthanthrene or a derivative thereof, and
the organic insulating material is formed from a cycloolefin copolymer.
An electronic device comprising:
a control electrode formed on a base material;
an insulating film covering the base material and the control electrode;
an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer formed on the insulating film, and
a first electrode and a second electrode formed on the active layer extension portion;
wherein the organic insulating material layer and the polycrystalline organic semiconductor material layer are formed by coating and drying on the insulating layer a solution in which the organic semiconductor material and the organic insulating material are dissolved in a solvent, in which wherein the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3.
An electronic device comprising:
an insulating film formed on a base material;
an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer formed on the insulating film;
a first electrode and a second electrode formed on the active layer extension portion;
an insulating layer formed on the active layer, the first electrode and the second electrode, and
a control electrode formed on the insulating layer and opposed to the active layer;
wherein the organic insulating material layer and the polycrystalline organic semiconductor material layer are formed by coating and drying on the insulating film a solution in which the organic semiconductor material and the organic insulating material are dissolved, in which the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3.
An electronic device, comprising:
an insulating film formed on a base material;
an active layer formed from an organic insulating material layer and a polycrystalline organic semiconductor layer, and an active layer extension portion formed on the insulating film, and
an electrode formed on the active layer extension portion,
wherein the organic insulating material layer and the polycrystalline organic semiconductor material layer are formed by coating and drying on the insulating film a solution in which the organic semiconductor material and the organic insulating material are dissolved in a solvent, in which the mass ratio of the (organic insulating material / organic semiconductor material) is greater than 1 and less than 3.
An electronic device comprising:
a control electrode formed on a base material;
an insulating film covering the base material and the control electrode; an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer formed on the insulating film,
and a first electrode and a second electrode formed on the active layer extension portion,
wherein the organic insulating material layer and the polycrystalline organic semiconductor material layer are formed by coating and drying on the insulating layer a solution in which the organic semiconductor material and the organic insulating material are dissolved in a mixed solvent, in which the boiling point of a first solvent of the mixed solvent is 150 degrees Celsius or lower and the boiling point of a second solvent is greater than 150 degrees Celsius, and the mass ratio of the (first solvent / second solvent) is from (10 / 1) to (0 / 1).
An electronic device comprising:
an insulating film formed on a base material;
an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer formed on the insulating film;
a first electrode and a second electrode formed on the active layer extension portion; an insulating layer formed on the active layer, the first electrode and the second electrode, and a control electrode formed on the insulating layer and opposed to the active layer,
wherein the organic insulating material layer and the polycrystalline organic semiconductor material layer are formed by coating and drying on the insulating film a solution in which the organic semiconductor material and the organic insulating material are dissolved in a mixed solvent, in which the boiling point of a first solvent of the mixed solvent is 150 degrees Celsius or lower and the boiling point of a second solvent is greater than 150 degrees Celsius, and the mass ratio of the (first solvent / second solvent) is from (10 / 1) to (0 / 1).
An electronic device comprising:
an insulating film formed on a base material;
an active layer and an active layer extension portion formed from an organic insulating material layer and a polycrystalline organic semiconductor material layer formed on the insulating film, and
an electrode formed on the active layer extension portion,
wherein the organic insulating material layer and the polycrystalline organic semiconductor material layer are formed by coating and drying on the insulating layer a solution in which the organic semiconductor material and the organic insulating material are dissolved in a mixed solvent, in which the boiling point of a first solvent of the mixed solvent is 150 degrees Celsius or lower and the boiling point of a second solvent is greater than 150 degrees Celsius, and the mass ratio of the (first solvent / second solvent) is from (10 / 1) to (0 / 1).