WO2008156049A1 - 固体撮像素子及びこれを用いた撮像装置 - Google Patents

固体撮像素子及びこれを用いた撮像装置 Download PDF

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Publication number
WO2008156049A1
WO2008156049A1 PCT/JP2008/060965 JP2008060965W WO2008156049A1 WO 2008156049 A1 WO2008156049 A1 WO 2008156049A1 JP 2008060965 W JP2008060965 W JP 2008060965W WO 2008156049 A1 WO2008156049 A1 WO 2008156049A1
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WIPO (PCT)
Prior art keywords
pixel
pixels
exit pupil
dimensionally arranged
same
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PCT/JP2008/060965
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English (en)
French (fr)
Inventor
Satoshi Suzuki
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Nikon Corporation
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Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to EP20213761.8A priority Critical patent/EP3823272A1/en
Priority to EP08765648.4A priority patent/EP2164269B1/en
Publication of WO2008156049A1 publication Critical patent/WO2008156049A1/ja
Priority to US12/591,987 priority patent/US8466998B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/80—Camera processing pipelines; Components thereof
    • H04N23/84—Camera processing pipelines; Components thereof for processing colour signals
    • H04N23/843—Demosaicing, e.g. interpolating colour pixel values
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/702—SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout

Abstract

　光学系により結像される被写体像を光電変換する固体撮像素子は、２次元状に配置され各々が入射光に応じた電荷を生成し蓄積する光電変換部を有する複数の画素を備え、複数の画素の各々は、光学系の射出瞳の中心から実質的に偏心していない射出瞳の領域からの光束を受光して光電変換して得た信号を出力する第１の画素、及び、光学系の射出瞳の中心から実質的に偏心した射出瞳の領域からの光束を選択的に受光して光電変換して得た信号を出力する第２の画素のうちのいずれかであり、複数の画素が２次元状に配置された複数の画素ブロックに分けられ、ｍ及びｎをそれぞれ２以上の整数としたとき、各画素ブロックは、複数の画素のうち列方向にｍ個、行方向にｎ個、２次元状に並んだｍ×ｎ個の画素からなり、各画素ブロックの画素のうちの少なくとも１つの画素は、第１の画素であり、同じ画素ブロックの第１の画素には、同じ色のカラーフィルタが設けられ、複数の画素ブロックのうちの少なくとも１つの画素ブロックのｍ×ｎ個の画素のうちの少なくとも１つの画素は第２の画素である。
PCT/JP2008/060965 2007-06-16 2008-06-16 固体撮像素子及びこれを用いた撮像装置 WO2008156049A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP20213761.8A EP3823272A1 (en) 2007-06-16 2008-06-16 Solid-state image sensor and imaging apparatus equipped with solid-state image sensor
EP08765648.4A EP2164269B1 (en) 2007-06-16 2008-06-16 Solid-state image sensor and imaging apparatus equipped with solid-state image sensor
US12/591,987 US8466998B2 (en) 2007-06-16 2009-12-07 Solid-state image sensor and imaging apparatus equipped with solid-state image sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007159607A JP5040458B2 (ja) 2007-06-16 2007-06-16 固体撮像素子及びこれを用いた撮像装置
JP2007-159607 2007-06-16

Related Child Applications (1)

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US12/591,987 Continuation US8466998B2 (en) 2007-06-16 2009-12-07 Solid-state image sensor and imaging apparatus equipped with solid-state image sensor

Publications (1)

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WO2008156049A1 true WO2008156049A1 (ja) 2008-12-24

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US (1) US8466998B2 (ja)
EP (2) EP3823272A1 (ja)
JP (1) JP5040458B2 (ja)
WO (1) WO2008156049A1 (ja)

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CN104185983A (zh) * 2012-03-16 2014-12-03 株式会社尼康 摄像元件、摄像装置以及摄像系统
US9338341B2 (en) 2008-07-10 2016-05-10 Canon Kabushiki Kaisha Image pickup apparatus capable of reading proper functional pixels when image signals are mixed or skipped and are read out, and method of controlling the same
WO2017057293A1 (ja) * 2015-09-30 2017-04-06 株式会社ニコン 被写体検出装置および撮像装置
TWI742573B (zh) * 2014-11-05 2021-10-11 日商索尼半導體解決方案公司 固體攝像元件及其製造方法以及電子機器

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