WO2006126352A1 - セラミック電子部品およびその製造方法 - Google Patents
セラミック電子部品およびその製造方法 Download PDFInfo
- Publication number
- WO2006126352A1 WO2006126352A1 PCT/JP2006/308400 JP2006308400W WO2006126352A1 WO 2006126352 A1 WO2006126352 A1 WO 2006126352A1 JP 2006308400 W JP2006308400 W JP 2006308400W WO 2006126352 A1 WO2006126352 A1 WO 2006126352A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- metal
- terminal
- ceramic electronic
- electronic component
- bonding
- Prior art date
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 82
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000000034 method Methods 0.000 title description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 201
- 239000002184 metal Substances 0.000 claims abstract description 201
- 239000002245 particle Substances 0.000 claims abstract description 82
- 239000000463 material Substances 0.000 claims abstract description 59
- 239000010410 layer Substances 0.000 claims abstract description 44
- 239000000843 powder Substances 0.000 claims abstract description 28
- 238000010438 heat treatment Methods 0.000 claims abstract description 24
- 239000011521 glass Substances 0.000 claims abstract description 22
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 17
- 239000000956 alloy Substances 0.000 claims abstract description 17
- 229910017944 Ag—Cu Inorganic materials 0.000 claims abstract description 16
- 239000011247 coating layer Substances 0.000 claims abstract description 15
- 238000007747 plating Methods 0.000 claims abstract description 15
- 239000010953 base metal Substances 0.000 claims abstract 3
- 238000000280 densification Methods 0.000 claims description 9
- 238000005304 joining Methods 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910052745 lead Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 description 41
- 238000005275 alloying Methods 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 9
- 239000003985 ceramic capacitor Substances 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 6
- 230000035939 shock Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 230000009257 reactivity Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical compound [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- UREBDLICKHMUKA-CXSFZGCWSA-N dexamethasone Chemical compound C1CC2=CC(=O)C=C[C@]2(C)[C@]2(F)[C@@H]1[C@@H]1C[C@@H](C)[C@@](C(=O)CO)(O)[C@@]1(C)C[C@@H]2O UREBDLICKHMUKA-CXSFZGCWSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000008642 heat stress Effects 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- -1 terminal electrode Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
- H01G2/02—Mountings
- H01G2/06—Mountings specially adapted for mounting on a printed-circuit support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
- H01G4/2325—Terminals electrically connecting two or more layers of a stacked or rolled capacitor characterised by the material of the terminals
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
Definitions
- the present invention relates to a ceramic electronic component and a method for manufacturing the same, and more particularly to a ceramic electronic component having a structure in which a metal terminal is attached to a terminal electrode and a method for manufacturing the same.
- a ceramic electronic component of interest to the present invention is a multilayer ceramic capacitor.
- Multilayer ceramic capacitors have a capacitor body as an electronic component body composed of ceramic! Terminal electrodes are formed on both end faces of the capacitor body.
- a mechanical damage force S such as a crack may be caused to the capacitor body due to a stress applied to the capacitor body due to thermal or mechanical factors. Therefore, in order to reduce the stress as described above as much as possible and prevent mechanical damage, a multilayer ceramic capacitor having a structure in which a metal terminal is attached to a terminal electrode has been proposed.
- the capacitor body may lose its metal terminal force in the solder reflow process when the multilayer ceramic capacitor is mounted on the wiring board. Also, between the metal such as Cu Sn and Ag Sn between the solder and the metal terminal
- a terminal electrode and a metal terminal are made of Ag—Cu alloy. It has been proposed to improve heat resistance by bonding. However, the joint between the terminal electrode and the metal terminal joined with an Ag-Cu alloy had high heat resistance, but the joint strength was not sufficient.
- Patent Document 2 does not specifically disclose the alloying temperature, but Patent Document 3 discloses that the alloying temperature is 800 ° C.
- Patent Document 2 a drop test is performed by applying a load in order to measure the bonding strength in the examples. It is stated that the capacitor element does not fall even when a load of 20 g is applied to the capacitor element. However, this 20 g load is a very slight load and can withstand this. However, it cannot be said that it has a sufficient bonding strength. If the joint strength is at least an order of magnitude higher than 20g, it cannot be said that the joint strength is sufficient. As described above, in the one described in Patent Document 2, the bonding strength is not so high because the Ag film of the metal terminal does not diffuse into the Cu film formed on the terminal electrode due to the heat treatment for alloying. It is presumed that it is because it is closed.
- Patent Document 1 Japanese Patent No. 3376971
- Patent Document 2 Japanese Patent Laid-Open No. 2002-231569
- Patent Document 3 Japanese Patent Application Laid-Open No. 2004-47671
- An object of the present invention is to provide a method for producing a ceramic electronic component capable of improving the bonding strength and the ceramic electronic component obtainable by this production method.
- the present invention is characterized in that Ag—Cu alloy bonding is applied for bonding the terminal electrode and the metal terminal.
- the present invention includes a step of preparing a ceramic electronic component body having terminal electrodes formed on both end faces, a step of preparing a metal terminal to be bonded to the terminal electrode, and a metal terminal.
- the present invention is directed to a method for manufacturing a ceramic electronic component, comprising a step of preparing a bonding material for bonding to a terminal electrode, and a bonding step of bonding a metal terminal to the terminal electrode via the bonding material.
- it is characterized by having the following configuration.
- the contact surface of the metal terminal with the bonding material includes one of Ag-based metal and Cu-based metal, and the bonding material is either the Ag-based metal or the Cu-based metal.
- Metal powder This metal powder has an average particle size of 2.0 m or less.
- at least one of the metal terminal and the bonding material includes a glass component.
- the metal powder included in the bonding material includes a large particle having a relatively large diameter and a small particle having a relatively small diameter, that is, at least. It shows a particle size distribution having two peaks, and the ratio of the average particle size of the small particles to the average particle size of the large particles is preferably in the range of 0.3 to 0.6. In this case, more preferably, the average particle diameter of the small diameter particles is 1 ⁇ m or less.
- the metal terminal includes a base material made of a Cu-based metal and a coating layer made of an Ag-based metal plating film, and the bonding material is a Cu-based metal. It preferably contains a metal powder consisting of and a glass component.
- the present invention also provides a ceramic electronic component body and both end faces of the ceramic electronic component body.
- the present invention is also directed to a ceramic electronic component including a terminal electrode to be formed and a metal terminal bonded to the terminal electrode through a metal bonding layer.
- the contact surface of the metal terminal with the metal bonding layer includes one of an Ag-based metal and a Cu-based metal
- the metal bonding layer includes a glass component
- the densification rate is 40% or more
- the metal terminal and the metal bonding layer are bonded by an Ag—Cu alloy.
- the metal terminal may include a base material having a Cu-based metal force and a coating layer made of an Ag-based metal plating film, and the metal bonding layer may be made of a Cu-based metal. preferable.
- the glass component is mainly composed of at least two kinds of oxides in which Bi, Si, B, Pb and Zn force are also selected.
- the average particle size of the metal powder contained in the bonding material is set to 2. O / zm or less, and at least the metal terminal and the bonding material are used. One side contains a glass component.
- the reactivity between Ag and Cu can be improved, and the alloying temperature between Ag and Cu can be lowered.
- Ag and Cu can be sufficiently alloyed at a relatively low temperature such as 550 to 750 ° C. For example, even the most diffusive adhesive layer can be reliably left.
- the metal powder contained in the bonding material includes large-diameter particles and small-diameter particles as described above, and the small-diameter with respect to the average particle diameter of the large-diameter particles.
- the ratio of the average particle diameter of the particles is within the range of 0.3 to 0.6, it becomes easy to close-pack the particles constituting the metal powder, and the voids between the particles can be reduced. .
- the reactivity of the particles constituting the metal powder is increased, and after heat treatment, The density of the joint can be improved, and high joint strength can be reliably obtained.
- the average particle diameter of the small-diameter particles is set to: L m or less, the above-described effect is more remarkably exhibited.
- the small-diameter particles are mixed at a ratio of 5 to 50 parts by weight with respect to 100 parts by weight of the large-diameter particles.
- the metal bonding layer for bonding the terminal electrode and the metal terminal has a densification rate of 40% or more (pore ratio is less than 60%). V, high, conductivity and mechanical strength can be secured.
- the metal terminal includes a base material having a Cu-based metal force and a coating layer made of a plated film of an Ag-based metal, and the bonding material includes a metal powder composed of a Cu-based metal and a glass component.
- the terminal electrode, the metal bonding layer, and the metal terminal can all be made of a Cu-based metal.
- the linear expansion coefficients of the terminal electrode, the metal bonding layer, and the metal terminal can be substantially equalized, so that heat stress can be generated at the bonded portion.
- cracks or the like are generated in the joint due to thermal shock, and the mechanical reliability of the ceramic electronic component can be improved.
- Cu-based metals have higher electrical conductivity and thermal conductivity than, for example, Fe-Ni-based metals.
- this preferred embodiment can be applied to a smoothing capacitor used under a large current.
- FIG. 1 is an enlarged cross-sectional view showing a part of a ceramic electronic component 1 for explaining an embodiment of the present invention, and (a) shows a metal terminal 2 as a terminal electrode. 8 shows a state before the heat treatment to be performed, and (b) shows a state after the heat treatment.
- FIG. 2 is a view corresponding to FIG. 1 (b), and shows a state when a temperature exceeding 750 ° C. is applied in the heat treatment.
- FIG. 3 is a front view showing a first example of the shape of a metal terminal provided in the ceramic electronic component according to the present invention.
- FIG. 4 is a front view showing a second example of the shape of the metal terminal provided in the ceramic electronic component according to the present invention.
- FIG. 5 is a front view showing a third example of the shape of the metal terminal provided in the ceramic electronic component according to the present invention.
- FIG. 6 is a front view showing a fourth example of the shape of the metal terminal provided in the ceramic electronic component according to the present invention.
- FIG. 7 is a side view showing a fifth example of the shape of the metal terminal provided in the ceramic electronic component according to the present invention.
- FIG. 8 is a side view showing a sixth example of the shape of the metal terminal provided in the ceramic electronic component according to the present invention.
- FIG. 9 is a side view showing a seventh example of the shape of the metal terminal provided in the ceramic electronic component according to the present invention.
- FIG. 10 is a diagram showing the relationship between the heat treatment temperature and the bonding strength of the metal terminal for the sample fabricated in Experimental Example 1.
- FIG. 11 is a diagram showing the relationship between the densification ratio of the metal bonding layer and the bonding strength of the metal terminal for each sample shown in FIG.
- FIG. 12 is a diagram showing the influence of thermal shock on the bonding strength of metal terminals in Examples and Comparative Examples evaluated in Experimental Example 2.
- FIG. 13 is a graph showing the relationship between the ratio of the average particle size of small particles to the average particle size of large particles and the bonding strength of metal terminals, evaluated in Experimental Example 3.
- FIG. 1 is for explaining an embodiment of the present invention, and shows an enlarged part of a ceramic electronic component 1.
- FIG. 1 (a) shows a state before the heat treatment performed for joining the metal terminals 2, and (b) shows a state after the heat treatment.
- the illustrated ceramic electronic component 1 constitutes a multilayer ceramic capacitor, and has a multilayer structure in which a plurality of stacked ceramic layers 3 and internal electrodes 4 and 5 are alternately stacked. Has six. Of the internal electrodes 4 and 5, the internal electrode 4 is drawn to one end face 7 of the ceramic electronic component body 6, and the internal electrode 5 is not shown, but extends to the other end face of the ceramic electronic component body 6. Has been pulled out. These internal electrodes 4 and internal electrodes 5 are alternately arranged in the stacking direction! RU
- FIG. 1 shows the configuration of one end face 7 side of the ceramic electronic component main body 6.
- the configuration on the one end face 7 side and the configuration on the other end face side are substantially the same. Therefore, hereinafter, the configuration on the side of the end face 7 illustrated will be described, and description of the configuration on the other end face side will be omitted.
- a terminal electrode 8 that is electrically connected to the internal electrode 4 is formed on the end surface 7 of the ceramic electronic component body 6.
- the terminal electrode 8 is formed, for example, by baking a conductive paste containing Cu-based metal powder.
- the ceramic electronic component main body 6 on which the terminal electrode 8 is formed as described above is prepared, and the metal terminal 2 to be bonded to the terminal electrode 8 and the metal A bonding material 10 for bonding the terminal 2 to the terminal electrode 8 is prepared.
- the metal terminal 2 includes a base material 11 and coating layers 12 and 13.
- the base material 11 is preferably made of a Cu-based metal such as a heat-resistant copper alloy such as beryllium copper, a Corson alloy, or phosphor bronze.
- the foundation formed on the base material 11 The coating layer 12 is composed of a Ni-based metal plating film, and the coating layer 13 formed thereon is composed of an Ag-based metal plating film. In this way, the outermost layer surface of the metal terminal 2 is composed of Ag-based metal.
- the bonding material 10 includes a metal powder having an average particle diameter of 2.0 ⁇ m or less, which also has a Cu-based metal force, and includes a glass component.
- a metal powder having a Cu-based metal force spherical Cu powder having a sphericity of 1.2 to 2.4 is preferably used.
- the metal powder contained in the bonding material 10 may be an Ag-based metal. What is used is used.
- the Ag-based metal and Cu-based metal used as described above are not limited to pure Ag and pure Cu, respectively.
- other metals may be added for the purpose of improving the hardness or adjusting the melting point as long as they are not damaged. More specifically, for Ag-based metals, Ag is the main component, while Sn, Zn, Cd, etc. may be added, while for Cu-based metals, Cu is the main component. Sn, Zn, Ni, P, etc. may be added.
- the metal powder contained in the bonding material 10 has an average particle diameter of 2.0 ⁇ m or less.
- a relatively large diameter large particle and a relatively small diameter small particle are mixed.
- the ratio of the average particle size of the small particles to the average particle size of the large particles is selected to be in the range of 0.3 to 0.6. More preferably, the average particle size of the small particles is 1 m or less.
- the small-diameter particles are mixed at a ratio of 5 to 50 parts by weight with respect to 100 parts by weight of the large-diameter particles.
- the glass component contained in the bonding material 10 is, for example, Bi O -B O —SiO glass or P
- the main component is a seed acid.
- the glass component may be contained on the metal terminal 2 side instead of the bonding material 10 or in addition to the bonding material 10.
- a joining process for joining the metal terminal 2 to the terminal electrode 8 via the joining material 10 is performed.
- heat treatment is performed at a temperature of 550 to 750 ° C. with the terminal electrode 8 and the metal terminal 2 in close contact with each other via the joining material 10.
- the bonding material 10 is sintered to form the metal bonding layer 10a, and the metal terminal 2 is bonded to the terminal electrode 8 through the metal bonding layer 10a.
- an Ag—Cu alloy layer 14 is formed between the metal terminal 2, more specifically, the coating layer 13 having Ag-based metal force and the metal bonding layer 10 a made of Cu-based metal.
- the terminal electrode 8 and the metal terminal 2 are joined with an Ag-Cu alloy 0
- the Ag-Cu alloy layer 14 described above has higher heat resistance than solder.
- the average particle size of the Cu-based metal powder contained in the bonding material 10 is 2.0 m or less and the bonding material 10 contains a glass component, the reactivity between Ag and Cu is improved.
- the alloying temperature can be lowered.
- the heat treatment at a temperature of 550 to 750 ° C. can prevent the diffusion of Ag or Cu while sufficiently alloying.
- the metal powder contained in the bonding material 10 includes large-sized particles and small-sized particles, and the ratio of these average particle sizes is selected within the range of 0.3 to 0.6.
- the reactivity of the metal powder can be increased, the density of the metal bonding layer 10a can be improved, and the terminal electrode 8 and the metal terminal 2 can be reduced. Higher bonding strength can be obtained.
- FIGS. 3 to 9 show various examples of the shape of the metal terminal provided in the ceramic electronic component according to the present invention.
- Figures 3 to 6 show ceramic electronic components 21a, 21b, 21c and 21d in front views, respectively, and Figs. 7 to 9 show side views of ceramic electronic components 21e, 21f and 21g, respectively. It is shown in
- FIGS. 3 to 9 show a state in which the ceramic electronic components 21a to 21g are mounted on the wiring board 22 in common.
- the ceramic electronic components 21a to 21g are commonly connected to the ceramic electronic component main body 23, the terminal electrodes 24 formed on both end faces of the ceramic electronic component main body 23, and the metal terminals 25a to 25g to the terminal electrodes 24. And a metal bonding layer 26.
- the metal terminal 25a is bent so as to extend in an inverted U shape, and the connection end 27a serving as a connection portion with respect to the wiring board 22 is formed on the ceramic electronic component main body 23. It is bent to extend outward.
- the metal terminal 25b is bent so as to extend in an inverted U shape as in the case of the metal terminal 25a, but becomes a connection portion to the wiring board 22.
- the connection end portion 27b is bent so as to extend inward of the ceramic electronic component main body 23.
- the metal terminal 25c is bent so as to extend in an inverted V shape with a relatively sharp bending angle, and the connection end 27c serving as a connection to the wiring board 22 is
- the ceramic electronic component body 23 is bent so as to extend inward.
- the metal terminal 25d is bent so as to extend in an L shape including the connection end 27d, and the connection end 27d is formed of the ceramic electronic component main body 2 3. It is bent to extend outward.
- the ceramic electronic component 21f shown in FIG. 8 includes the double-structured metal terminal 25f as shown in FIGS. 3 to 5, but in the portion located outside the metal terminal 25f, the hole 28 Is provided.
- the metal terminal 25g has a comb-like shape. ing.
- the ceramic electronic component body we prepared a ceramic electronic component body for multilayer ceramic capacitors in which the internal electrode is made of Ni-based metal and the terminal electrode is made of Cu-based metal.
- the bonding material Cu-based metal powder with an average particle size of 1.3 m, Bi O — B O — SiO
- Figure 3 was prepared with beryllium copper as the base material, Ni plating film as the underlying coating layer, and Ag plating film as the coating layer on top of it.
- the terminal electrode and the metal terminal are fixed in a state where the terminal electrode and the metal terminal are in close contact via the bonding material. Dry for 20 minutes in a thermostatic chamber set at a temperature of 0 ° C, and then maintain the state in an oven in a neutral atmosphere 500. C, 550 ° C, 600. C, 650 ° C, 700. C, 750 ° C, and 800 ° C were heat-treated to obtain ceramic electronic components with metal terminals attached to each sample.
- FIG. 10 shows the result of evaluating the bonding strength of the metal terminal to the terminal electrode of the ceramic electronic component obtained as described above.
- FIG. 11 shows the densification rate of each sample shown in FIG.
- the densification rate is obtained by calculating from an area ratio on a cross-sectional micrograph at any point in the metal bonding layer after the heat treatment.
- the glass component contained in the bonding material was Bi 2 O — B 2 O — Si.
- the bonding strength is significantly reduced by the thermal shock, whereas in the example, the bonding strength is hardly reduced by the thermal shock.
- a conductive paste containing Cu-based metal powder having an average particle size of 1.3 m was used as the bonding material.
- the conductive paste in the conductive paste serving as the bonding material was used.
- the Cu-based metal powder a mixture of a large particle having a relatively large diameter and a small particle having a relatively small diameter was used.
- the average particle size of the large particles is fixed at 1.25 ⁇ m, and the average particle size of the small particles is varied in various ways.
- a mixture of 25 parts by weight of small-diameter particles with respect to parts was used.
- the heat treatment temperature was set to 650 ° C.
- the other conditions were the same as in Experimental Example 1, and the ceramic electronic components that were the samples were obtained. Then, the bonding strength of the metal terminal to the terminal electrode of this ceramic electronic component was evaluated. The result is shown in FIG.
- the joining strength fluctuates due to the fluctuation of the "small particle diameter Z particle diameter” and the "small particle diameter Z large particle diameter” is 0. When it is within the range of 3 to 0.6, relatively high bonding strength is obtained.
- the particle size of small particle Z particle size of large particle exceeds 0.6, The reactivity is lowered, and therefore the bonding strength is lowered.
- the particle size of the small particle ′ the particle size of the large particle ”is less than 0.3, the aggregation of the small particles progresses, the dispersibility of the metal powder decreases, and the denseness of the bonded portion is inhibited. . As a result, the bonding strength is reduced
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- Chemical & Material Sciences (AREA)
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- Inorganic Chemistry (AREA)
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Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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KR1020077027367A KR100908985B1 (ko) | 2005-05-23 | 2006-04-21 | 세라믹 전자부품 및 그 제조방법 |
EP06745531.1A EP1890302B1 (en) | 2005-05-23 | 2006-04-21 | Ceramic electronic component and method for manufacturing same |
CN2006800176360A CN101180690B (zh) | 2005-05-23 | 2006-04-21 | 陶瓷电子元件及其制造方法 |
JP2007517744A JP4665966B2 (ja) | 2005-05-23 | 2006-04-21 | セラミック電子部品およびその製造方法 |
TW095115831A TWI317530B (en) | 2005-05-23 | 2006-05-04 | Ceramic electronic component and manufacturing method thereof |
US11/931,521 US7436649B2 (en) | 2005-05-23 | 2007-10-31 | Ceramic electronic component and method for manufacturing the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2005-148952 | 2005-05-23 | ||
JP2005148952 | 2005-05-23 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US11/931,521 Continuation US7436649B2 (en) | 2005-05-23 | 2007-10-31 | Ceramic electronic component and method for manufacturing the same |
Publications (1)
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WO2006126352A1 true WO2006126352A1 (ja) | 2006-11-30 |
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PCT/JP2006/308400 WO2006126352A1 (ja) | 2005-05-23 | 2006-04-21 | セラミック電子部品およびその製造方法 |
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US (1) | US7436649B2 (ja) |
EP (1) | EP1890302B1 (ja) |
JP (1) | JP4665966B2 (ja) |
KR (1) | KR100908985B1 (ja) |
CN (1) | CN101180690B (ja) |
TW (1) | TWI317530B (ja) |
WO (1) | WO2006126352A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009026906A (ja) * | 2007-07-19 | 2009-02-05 | Murata Mfg Co Ltd | 電子部品およびその製造方法 |
JP2010016326A (ja) * | 2008-06-02 | 2010-01-21 | Murata Mfg Co Ltd | セラミック電子部品及びその製造方法 |
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JP2009026906A (ja) * | 2007-07-19 | 2009-02-05 | Murata Mfg Co Ltd | 電子部品およびその製造方法 |
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EP1890302A4 (en) | 2014-12-31 |
TW200701275A (en) | 2007-01-01 |
EP1890302A1 (en) | 2008-02-20 |
TWI317530B (en) | 2009-11-21 |
JP4665966B2 (ja) | 2011-04-06 |
US20080130199A1 (en) | 2008-06-05 |
CN101180690B (zh) | 2011-06-15 |
CN101180690A (zh) | 2008-05-14 |
EP1890302B1 (en) | 2018-06-20 |
KR20080010435A (ko) | 2008-01-30 |
US7436649B2 (en) | 2008-10-14 |
JPWO2006126352A1 (ja) | 2008-12-25 |
KR100908985B1 (ko) | 2009-07-22 |
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