WO2005081319A1 - Optoelektronisches bauelement, vorrichtung mit einer mehrzahl optoelektronischer bauelemente und verfahren zur herstellung eines optoelektronischen bauelements - Google Patents
Optoelektronisches bauelement, vorrichtung mit einer mehrzahl optoelektronischer bauelemente und verfahren zur herstellung eines optoelektronischen bauelements Download PDFInfo
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- WO2005081319A1 WO2005081319A1 PCT/DE2005/000281 DE2005000281W WO2005081319A1 WO 2005081319 A1 WO2005081319 A1 WO 2005081319A1 DE 2005000281 W DE2005000281 W DE 2005000281W WO 2005081319 A1 WO2005081319 A1 WO 2005081319A1
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- Prior art keywords
- layer
- semiconductor functional
- semiconductor
- active zone
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
Definitions
- Optoelectronic component device with a plurality of optoelectronic components and method for producing an optoelectronic component
- the invention relates to an optoelectronic component according to the preamble of patent claim 1, a device according to the preamble of patent claim 16 and a method according to the preamble of patent claim 21.
- Individual processing steps are necessary, such as, for example, arranging the semiconductor functional area or a semiconductor chip comprising the semiconductor functional area in a housing, contacting the semiconductor chip with external connections via bonding wires or overmolding the semiconductor chip with a protective covering. Individual processing steps are usually cost-intensive compared to processing steps that can be performed on a large number of elements at the same time.
- the semiconductor functional areas can, for example, in the wafer composite, which comprises a semiconductor layer sequence arranged on a carrier layer, from the
- Semiconductor layer sequence are formed. After that, the wafer composite is usually separated into semiconductor chips, which can be processed further in individual processing steps for optoelectronic components.
- the formation of very flat structures is often made more difficult by contacting the semiconductor functional area by means of a bonding wire.
- the arc of the bonding wire is often relatively high and can significantly determine the height of an optoelectronic component.
- a separate from the Semiconductor functional area formed housing whose spatial dimensions are often significantly larger than that of the semiconductor functional area, can make the formation of small optoelectronic components difficult.
- An object of the invention is to provide an optoelectronic component and a device with a plurality of optoelectronic components which can be produced in a simplified and inexpensive manner, and a simplified production method for optoelectronic components.
- an optoelectronic component according to the invention comprises a
- Semiconductor functional area with an active zone and a lateral main direction of extent, the semiconductor functional area having at least one opening through the active zone and in the area of the opening a connecting conductor material is arranged which is electrically insulated from the active zone at least in a partial area of the opening.
- the optoelectronic component comprises a semiconductor functional region with an active zone and a lateral main extension direction
- Semiconductor functional area has a lateral side surface delimiting the active zone and a connecting conductor material arranged downstream of the side surface in the lateral direction is arranged, which is electrically isolated from the active zone at least in a portion of the side surface.
- the side surface can optionally laterally delimit the semiconductor functional region.
- the side surface can in particular partially limit the semiconductor functional region in the lateral direction.
- the side surface can be flat, that is to say essentially free of an indentation or bulge, in particular a depression in the lateral direction.
- a layer of a molding compound which can be designed to be self-supporting or mechanically load-bearing, is preferably arranged downstream of the semiconductor functional region.
- This molding compound layer can be further developed in the form of a covering, an encapsulation element or a stabilization layer, as will be explained in more detail below.
- a component according to the invention can advantageously be manufactured largely or completely in the wafer composite.
- the number of comparatively expensive and / or complex individual processing steps can advantageously be reduced in an optoelectronic component according to the invention. Individual processing steps can be avoided with particular advantage.
- a wafer composite is considered to be a semiconductor layer sequence arranged on a carrier layer during the manufacture of the optoelectronic component and which is provided for the formation of a plurality of semiconductor functional areas.
- the semiconductor functional regions are at least partially formed in a composite on the carrier layer from regions of the semiconductor layer sequence during the production of the component.
- the carrier layer can be through a growth substrate on which the semiconductor layer sequence, for example epitaxially manufactured, formed or include such.
- a contact structure that serves for the electrical contacting of the finished optoelectronic component can already be produced at least partially, preferably completely, in the wafer assembly.
- the optoelectronic component is preferably contacted at least partially via the electrically conductive connecting conductor material, which can already be arranged in the wafer composite in the region of the opening through the active zone or in the region of the side surface delimiting the active zone.
- the connecting conductor material contains, for example, a metal such as Au, Al, Ag, Ti, Pt, Sn or an alloy with at least one of these materials.
- the connecting conductor material is spaced from the semiconductor functional area in the lateral direction, in particular in the area of the active zone, as a result of which the risk of a short circuit during operation of the component is reduced.
- connecting conductor material can be arranged in a, in particular lateral, edge region of the semiconductor functional region and / or be spaced apart from the side surface.
- the semiconductor functional region has at least one depression in the lateral direction, which particularly preferably at least partially surrounds the breakthrough through the active zone.
- the breakthrough can be a depression of the semiconductor functional area in the lateral direction be formed and / or the side surface has a depression in the lateral direction.
- the breakthrough can be in the form of a recess or the recess which does not completely penetrate the semiconductor functional region
- Semiconductor functional area completely penetrating recess can be formed, wherein the recess or the recess at least partially, preferably completely enclose or form the opening through the active zone.
- the breakthrough preferably extends essentially perpendicularly to the lateral main direction of extent of the semiconductor functional region in the vertical direction through the entire semiconductor functional region.
- the breakthrough is designed as a recess in the semiconductor functional area.
- the connecting conductor material is preferably at least partially electrically isolated from the active zone by an insulation material.
- the insulation material is preferably arranged in the region of the opening or the side surface, in particular directly, on the active zone and contains, for example, a silicon nitride, such as SiN or SißN-j, a silicon oxide, such as SiO or Si0 2 , or a silicon oxynitride, such as SiON.
- the insulation material lines the opening, in particular the recess, preferably in such a way or the insulation material is preferably, in particular directly, arranged on the side surface such that the active zone is electrically insulated from the connecting conductor material by the insulation material.
- the risk of a short circuit in the active zone via the connecting conductor material can thus be reduced.
- the entire wall of the opening is lined with the insulation material or at least approximately the entire side surface is covered with the insulation material, so that the risk of a short circuit during operation of the component is further reduced.
- the connecting conductor material is preferably arranged at least over almost the entire vertical course of the semiconductor functional area, which can advantageously facilitate the formation of the contact structure in the production of such an optoelectronic component in the wafer composite.
- a connecting conductor material that extends in the vertical direction along the entire semiconductor functional area enables, in particular in connection with a correspondingly arranged insulation material, electrical contacting of the optoelectronic component or its semiconductor functional area in the vertical direction over the area of the active zone without the risk of Shorts is increased.
- This part of the contact structure of the optoelectronic component can advantageously be produced in the wafer assembly.
- the semiconductor functional region has a first main surface and a second main surface opposite the first main surface with respect to the active zone, the semiconductor functional region preferably being electrically conductively connected to the connecting conductor material on the part of the first main surface.
- first contact which is conductively connected to the semiconductor functional region and to the connecting conductor material on the part of the first main surface of the semiconductor functional region.
- first contact of this type for example containing a metal such as Au, Al, Ag, Pt, Ti, Sn or an alloy with at least one of these materials, for example AuGe, can likewise advantageously be produced in the wafer composite.
- a conductive connection between the connecting conductor material, which can extend in the region of the opening, in the depression or along the edge region of the semiconductor functional region, in particular along the side surface, in the vertical direction over the vertical course of the semiconductor functional region, and the first contact on the first main surface of the semiconductor functional region enables the first main surface of the semiconductor functional region to be electrically connectable on the part of the second main surface.
- a connecting conductor formed from the connecting conductor material and the first contact can be made in one piece, in particular with an identical material.
- the connecting conductor material is electrically insulated from the second main surface of the semiconductor functional area. The risk of short circuits can be further reduced in this way.
- a second contact for example containing a metal such as Au, Al, Ag, Ti, Pt, Sn or an alloy with at least one of these materials, for example AuGe, is arranged on the side of the second main surface the
- Semiconductor functional area in particular for current injection, is electrically conductively connected on the part of the second main surface.
- the optoelectronic component can be electrically connected via the first and the second contact.
- the optoelectronic component can be surface-mountable as an SMD component (SMD: Surface Mountable Device).
- SMD Surface Mountable Device
- the component can be provided for a hybrid module.
- Bonding wires can advantageously be dispensed with in the electrical contacting of such a component by means of the first and the second contact, as a result of which the height of the component is advantageously reduced and the formation of small components is facilitated. Furthermore, such a contact structure can advantageously be formed in the wafer assembly.
- the number of contacts is of course not limited to two, but if necessary a plurality of contacts or contact pairs can also be provided.
- the optoelectronic component in particular the semiconductor functional region with the active zone, can be designed in accordance with a radiation-emitting or radiation-receiving component.
- the active zone can accordingly be designed for the generation of electroluminescent radiation or for the generation of signals via charge carriers generated in the active zone due to incident radiation.
- Semiconductor functional area can be designed, for example, in accordance with an LED chip, a laser diode chip with a lateral or vertical emission direction, or a photodiode chip.
- the first and second contacts are then preferably carried out according to the two poles of a diode contact.
- the semiconductor functional area in particular the active zone, preferably contains at least one III-V semiconductor material, for example a material made of a III-V semiconductor material system, such as In x Ga y Al ⁇ - x - y P, In x Ga y Al ⁇ - x . y N or In x Ga y Al ⁇ - x . y As, each with O ⁇ x ⁇ l, O ⁇ ysl and x + y ⁇ l.
- III-V semiconductor material for example a material made of a III-V semiconductor material system, such as In x Ga y Al ⁇ - x - y P, In x Ga y Al ⁇ - x . y N or In x Ga y Al ⁇ - x . y As, each with O ⁇ x ⁇ l, O ⁇ ysl and x + y ⁇ l.
- the optoelectronic component is preferably designed for radiation in the ultraviolet, visible or infrared spectral range.
- the material system In x Ga y Al ! , x - y N is particularly suitable for radiation from the ultraviolet to the green spectral range, while In x Ga y Al ⁇ . x . y P is particularly suitable for radiation from green-yellow to red and Inj c Ga y Ali- x -As for radiation in the infrared spectral range.
- the component can also be based on other materials that are not contained in a III-V material system.
- the semiconductor functional region can contain Si, in particular for photodiodes, or a II-VI semiconductor material or be based on Si or II-VI semiconductor materials.
- a III-V semiconductor material on the other hand, compared to simplified, comparatively high internal quantum efficiencies of the component can be achieved.
- the opening in the optoelectronic component preferably has such small dimensions in the lateral direction that the area of the active zone that is available for generating or receiving radiation is as large as possible. This can be achieved by a suitable formation of the breakthrough.
- the opening and / or the depression in the semiconductor functional area is preferably dimensioned in the lateral direction such that the connecting conductor material or the one
- Connecting conductor material comprising connecting conductors has a conductivity that is adapted to the respective design of the semiconductor functional area. Components with high outputs often require higher conductivities than components with comparatively low outputs.
- a lateral dimension of the opening or of the depression or of the connecting conductor material can range from the nanometer to the micrometer range. For example, a lateral dimension is 100 ⁇ m, preferably 50 ⁇ m or less, e.g. 100 nm or 10 ⁇ m.
- a sufficiently high conductivity can optionally also be achieved via a plurality of openings with connecting conductor material arranged in the openings or a correspondingly coordinated combination of the dimensions and the number of openings.
- the optoelectronic component has a window arranged downstream of the semiconductor functional region, which is preferably transparent to the radiation to be received or generated by the active zone and / or lies in the beam path of this radiation.
- the window can be provided for coupling or decoupling radiation from the optoelectronic component.
- the optoelectronic component has an encapsulation which preferably at least partially reshapes or envelops the semiconductor functional region.
- Semiconductor functional area can in particular be embedded in the casing.
- the wrapper can be part of the window and / or form the window.
- the casing advantageously protects the semiconductor functional area from harmful external influences, such as moisture.
- the sheathing is preferably designed to be radiation-permeable for radiation to be generated or received by the active zone. In this way, an undesired absorption of radiation in the envelope is advantageously reduced.
- the material of the covering is preferably resistant to the radiation to be generated by the active zone or incident on it. The risk of discolouration or softening of the casing which reduces efficiency can thus be reduced.
- the semiconductor functional area in particular the active zone, is surrounded by an encapsulation which is preferably essentially sealed, at least when the component is started up and / or operated, in particular hermetically sealed against harmful external influences, such as moisture .
- the encapsulation which can include the encapsulation and optionally one or more further encapsulation elements, preferably completely surrounds the semiconductor functional area or the active zone and advantageously increases the protection of the semiconductor functional area or the active zone against harmful external influences.
- the encapsulation is also preferably designed such that the contacts of the optoelectronic component can be connected, preferably through the encapsulation. External connections or external connection means can thus be part of the encapsulation.
- the optoelectronic component can be electrically conductively connected to conductor tracks of a printed circuit board by means of the external connections.
- the component is preferably connected to the conductor tracks via a solder connection.
- the encapsulation or the encapsulation elements are preferably at least partially designed such that the area between the encapsulation or the
- Encapsulation element and the active zone, in particular in the beam path of the radiation to be generated or received is essentially free of cavities.
- the risk of excessive jumps in the refractive index caused by a cavity with correspondingly high reflection losses at interfaces when coupling or decoupling radiation into the component can thus be reduced.
- elements involved in the encapsulation can also already be formed in the wafer assembly.
- the entire encapsulation can be produced in a wafer composite with particular preference.
- the encapsulation is mechanically stable in such a way that an additional housing protecting the semiconductor functional area is dispensed with and the formation of very small optoelectronic components with protective, preferably all-round, encapsulation of the semiconductor functional area can be facilitated.
- the encapsulation or the elements of the encapsulation, such as the casing are preferably at least partially designed such that they are at least briefly exposed to high temperatures, for example above 200 ° C., preferably up to 300 ° C., as occur when the connections of the component are soldered can be stable, so that the risk of damage to the semiconductor functional area and / or the casing due to a soldering process is not significantly increased.
- at least one absorption substance or one phosphor is arranged downstream of the semiconductor functional region.
- the phosphor or the absorbent can, preferably directly, in, on or on the window, the envelope or the
- Semiconductor functional area may be provided or arranged.
- the absorption substance or the phosphor is preferably designed as a powder.
- An absorption substance such as an organic dye
- a component designed as a radiation-receiving component in order to use the sensitivity, such as the spectral, as a filter material
- Sensitivity distribution of the radiation detector to be influenced by absorption at suitable, in particular predetermined, wavelengths from a radiation incident on the semiconductor functional area.
- the spectral sensitivity distribution of an optoelectronic component designed as a radiation detector can thus advantageously be set in a targeted manner.
- the phosphor can preferably absorb radiation of a wavelength ⁇ x generated by the active zone and re-emit it as radiation of a wavelength ⁇ 2 .
- the wavelength ⁇ 2 is preferably larger than the wavelength ⁇ i.
- Such an optoelectronic component can generate mixed-color light, in particular white light, in the color of which a mixture of radiations of the wavelengths ⁇ i and ⁇ 2 is involved.
- Such a phosphor thus at least partially converts the radiation of the wavelength ⁇ i into radiation of the wavelength ⁇ 2 and is therefore often also referred to as a conversion substance, in particular a luminescence conversion substance.
- Inorganic phosphors, doped garnets, Ce or Tb-activated garnets can be used as luminescence conversion substances (such as YAG: Ce, TAG: Ce, TbYAG: Ce), alkaline earth metal sulfates or organic dyes can be used.
- Suitable luminescence conversion substances are described, for example, in publication W098 / 12757, the content of which is hereby incorporated by reference.
- a phosphor in particular a YAG-based phosphor, which converts a radiation generated in the semiconductor functional range, for example in the ultraviolet or blue spectral range, into longer-wave radiation, for example in the yellow spectral range, is particularly suitable for generating white light.
- Mixed-color, in particular white, light can result from the mixture of the converted and the non-converted radiation component.
- the average grain size of the luminescence conversion material of a powder used is a maximum of 30 ⁇ m.
- An average grain size between 2 and 6 ⁇ m has proven to be particularly advantageous. It has been shown that the luminescence conversion can take place particularly efficiently with this grain size.
- the conversion substance is preferably arranged as close as possible to the active zone. This can increase the efficiency of the conversion, since the intensity of the radiation generated by the active zone decreases quadratically with increasing distance from the active zone. Furthermore, an optimization of the etendue or the dependence of the color location of the mixed-color radiation on the viewing angle is facilitated.
- a conversion of the radiation close to the active zone into a lower-energy radiation of a longer wavelength can also have a protective effect on an element surrounding the conversion substance or after the conversion substance, such as the covering.
- the risk of radiation-induced discoloration of the wrapping material can be reduced by conversion in the vicinity of the active zone.
- the phosphor in particular directly, is on the
- the phosphor can be in the form of a phosphor layer. This facilitates a particularly efficient luminescence conversion close to the active zone.
- the phosphor is preferably in the wafer composite on the semiconductor layer sequence or that emerging from the semiconductor layer sequence
- the phosphor can be applied in particular by means of electrostatic forces. This preferably applies accordingly to the absorbent.
- the semiconductor functional area is followed by one or a plurality of optical elements, which advantageously influence the efficiency or the radiation or reception characteristics of the component.
- This optical element can be designed, for example, as a lens for beam shaping.
- the optical element can be designed as a filter element or scattering element.
- the optical element can be designed as an antireflection layer or coating. Over a
- Anti-reflective coatings can advantageously be reduced by reflection losses caused by refractive index jumps.
- One or a plurality of ⁇ / 4 layers are particularly suitable for this.
- the ⁇ / 4 layers are particularly suitable for this.
- the ⁇ / 4 layers are particularly suitable for this.
- Anti-reflective layer containing the materials listed above for the insulation material. In particular, they can
- An anti-reflection layer can be between the casing and the semiconductor functional region and / or between the casing and the window.
- the optical element is formed in the envelope or the window, applied to this or this or in direct contact with this or this.
- the optical element in particular a lens or a scattering structure, can be structured, for example, into the encapsulation or the window material or can be molded from the latter. This can be done, for example, by stamping or an etching process.
- the scattering or filter element for example in the form of scattering or filter particles, can be arranged in the casing or the window.
- the optical element can also be glued, vapor-deposited or sputtered onto the encapsulation material or the semiconductor functional region.
- Gluing is particularly suitable for optical elements for beam shaping, while sputtering or vapor deposition is particularly suitable for an anti-reflection coating.
- the optical element is preferably formed in the wafer composite.
- the semiconductor functional area is arranged on a carrier.
- the carrier can consist of a section of the growth substrate of the semiconductor layer sequence, from which the semiconductor functional area emerges during the production of the component, or a section of another support layer, different from the growth substrate, on which the semiconductor layer sequence during processing or production, for example by means of a wafer bonding method, is arranged, formed or comprise such.
- the growth substrate is detached, preferably according to the arrangement of the semiconductor layer sequence or the semiconductor functional areas on the carrier layer.
- the carrier preferably mechanically supports and stabilizes the semiconductor functional area.
- the semiconductor functional region can be arranged on one side of the carrier.
- the connecting conductor material preferably extends at least to a side of the carrier opposite the semiconductor functional region. This makes it easier to connect the optoelectronic component electrically from the side of the carrier opposite the semiconductor functional region.
- the opening extends, which e.g. is designed as a lateral depression, preferably up to the side of the carrier opposite the semiconductor functional region.
- the carrier is involved in the electrical contacting of the component, it is preferably made electrically conductive.
- the carrier contains a suitable semiconductor material, which can be doped to increase its conductivity.
- a mirror layer is arranged downstream of the active zone and / or the semiconductor functional area.
- a mirror layer can be used, for example, as a Bragg mirror
- the mirror layer between the support and the is particularly preferred active zone and / or arranged on the semiconductor functional area.
- the mirror layer is preferably designed to be electrically conductive and can be involved in contacting the component.
- the mirror layer is expediently electrically conductively connected to the semiconductor functional area.
- the mirror layer is preferably designed to be reflective with respect to radiation to be received or generated by the active zone.
- the mirror layer advantageously increases the efficiency of the optoelectronic component, for example by reducing the absorption of radiation in the carrier or by advantageously influencing the radiation or reception characteristics of the optoelectronic component.
- the mirror layer can with particular advantage already in the wafer composite, for example by growing up, such as the Bragg mirror, together with and integrated in the semiconductor layer sequence, or by subsequent application, for example by means of vapor deposition or sputtering, such as a metal-containing mirror layer, onto the semiconductor layer sequence or the Semiconductor functional area are manufactured.
- the mirror layer can have a first partial mirror layer monolithically integrated in the semiconductor layer sequence or the semiconductor functional area and one on the part of the integrated partial mirror layer on the semiconductor layer sequence or
- An intermediate layer is preferably arranged between the partial mirror layers and is particularly preferably connected to the partial layers in an electrically conductive manner.
- a radiation-permeable conductive oxide in particular a Intermediate layer containing metal oxide such as a zinc oxide, an indium tin oxide or a tin oxide is particularly suitable.
- the intermediate layer can serve to optimize the electrical contact of the metal-containing partial mirror layer to the integrated partial mirror layer.
- a thin-film component with a metal-containing mirror can in particular have an essentially cosine-shaped radiation characteristic corresponding to a Lambert radiator.
- the encapsulation or at least one element of the encapsulation is designed in such a way that the semiconductor functional region is mechanically stabilized. This can have a stabilizing effect on one
- Semiconductor functional area stabilizing carriers are omitted, which facilitates the formation of very thin optoelectronic components.
- the carrier can therefore in particular be thinned or removed.
- a device according to the invention with a plurality of optoelectronic components has a plurality of optoelectronic components according to the invention of the type mentioned above, the semiconductor functional areas preferably being arranged at least partially next to one another in the lateral direction.
- the lateral juxtaposition advantageously corresponds to the arrangement of the semiconductor functional areas, which results from a corresponding structuring of a semiconductor layer sequence into semiconductor functional areas on a carrier layer in the Wafer composite emerges.
- the device is particularly suitable for manufacturing in a wafer composite.
- the device has an encapsulation which at least partially envelops or reshapes the semiconductor functional areas.
- the covering is preferably formed in one piece.
- the cladding can also advantageously be formed in the wafer composite.
- the casing can be designed in accordance with the above statements.
- the semiconductor functional areas are mechanically stabilized by a stabilization layer.
- the semiconductor functional areas are preferably stabilized in an arrangement which is provided by the arrangement of the semiconductor functional areas of the device in the wafer composite, in particular on a flat carrier layer.
- the stabilizing layer comprises the covering and / or the window, and / or the stabilizing layer is essentially identical to the covering, so that the covering simultaneously has a protective effect with respect to the
- the covering can thus be designed as a stabilization layer or be part of the stabilization layer.
- a wafer composite with a semiconductor layer sequence arranged on a carrier layer and having an active zone and a lateral main direction of extension is first provided.
- the semiconductor layer sequence is subsequently structured in such a way that at least one breakthrough through the active zone is formed or at least one lateral side surface delimiting the active zone in the lateral direction is formed is, according to which a connecting conductor material is arranged in the area of the opening or the side surface such that the active zone is electrically isolated from the connecting conductor material at least in a partial area of the opening or the side surface.
- optoelectronic components are separated, the electrical contacting of which takes place at least partially via the connecting conductor material.
- Such a method has the advantage that optoelectronic components, including their contact structure, can be produced, at least partially, preferably completely, inexpensively in the wafer assembly. Because the active zone is electrically insulated from the connecting conductor material, for example by suitably arranging the connecting conductor material relative to the active zone, such as at a distance from the active zone, the risk of short circuits in the active zone via the connecting conductor material can be reduced.
- the contact structure of the component can advantageously be designed such that the optoelectronic component is free of wire bonds or can be contacted without bond wire.
- the carrier layer can contain the growth substrate of the semiconductor layer sequence on which the semiconductor layer sequence, preferably epitaxially, was produced or can be different from the growth substrate of the semiconductor layer sequence. In the latter case, the growth substrate is detached, preferably after the semiconductor layer sequence has been arranged, in particular with its side opposite the growth substrate on the carrier layer.
- the active zone is preferably electrically insulated from the connecting conductor material via an insulation material.
- the insulation material for example containing SiN or another of the materials mentioned above, is still preferably at least partially arranged in the area of the opening or the side surface.
- the insulation material is particularly preferably arranged directly on the active zone and / or the connecting conductor material is electrically insulated from the active zone by the insulation material arranged between the active zone and the connecting conductor material. This further reduces the risk of a short circuit in the active zone.
- the insulation material is preferably applied in front of the connection conductor material and / or the connection conductor material borders directly on the insulation material.
- the insulation material can be applied, for example, by vapor deposition, for example in a PVD process, such as sputtering, or in a CVD process, such as PECVD.
- the semiconductor layer sequence has at least one depression in the lateral direction, which preferably at least partially surrounds the opening through the active zone. If necessary, the breakthrough can be a deepening of the
- Semiconductor layer sequence can be formed in the lateral direction.
- a wall of the opening is preferably at least partially lined with the insulation material.
- the electrically conductive connecting conductor material is at least partially arranged in the opening, in particular in the depression.
- the breakthrough can thus determine the contact structure of the optoelectronic component.
- the opening preferably extends in the vertical direction perpendicular to the lateral main direction of extent of the semiconductor layer sequence, in particular through the entire semiconductor layer sequence.
- the opening preferably extends to or into the Carrier layer.
- the breakthrough extends particularly preferably through the entire carrier layer.
- the breakthrough can thus be formed in particular as a recess extending through the semiconductor layer sequence and / or into or through the carrier layer or as a recess in the semiconductor layer sequence.
- the cutout in the region of the semiconductor layer sequence in the lateral direction can be at least partially, preferably completely, delimited by the semiconductor layer sequence.
- the semiconductor layer sequence can thus completely enclose the opening in the lateral direction.
- the semiconductor layer sequence is structured in such a way that a plurality of semiconductor function areas, in particular spatially separated from one another by intermediate spaces in the lateral direction, are created.
- This structuring of the semiconductor layer sequence is particularly preferably carried out in one process step with the formation of the opening or the side surface, in particular before the arrangement of the connecting conductor material.
- the structuring in semiconductor functional areas can take place before or after the opening or the side surface is formed.
- the semiconductor functional areas preferably have at least partially an opening through the active zone or a side surface delimiting the active zone in the lateral direction.
- a plurality of openings for a plurality of semiconductor functional areas is expediently generated in the structuring of the semiconductor layer sequence.
- the breakthrough can be formed as a recess in the semiconductor functional region, which is preferably delimited at least partially, preferably completely, in the region of the semiconductor functional region in the lateral direction by the semiconductor functional region.
- the semiconductor functional area can thus completely enclose the opening in the lateral direction.
- a plurality of openings are generated through the active zone, a plurality of semiconductor functional regions having at least one opening through the active zone.
- a plurality of semiconductor function areas each have at least one depression in the lateral direction which at least partially surrounds the opening or, in the case of a plurality of semiconductor function areas, the opening is designed as a depression of the respective semiconductor function area in the lateral direction.
- a plurality of the semiconductor functional areas each have at least one lateral side surface delimiting the active zone of the respective semiconductor functional area.
- the side face preferably delimits the respective semiconductor functional region on the side face in the lateral direction.
- the entire semiconductor functional area can be limited by such side surfaces.
- This side surface (s) can be formed, for example, when structuring the semiconductor layer sequence in semiconductor functional areas.
- the side surface can in particular adjoin an intermediate space arranged between two semiconductor functional areas.
- the connecting conductor material is preferably arranged downstream of the side surface in such a way that the connecting conductor material is electrically insulated from the active zone at least in a partial area of the side surface.
- the insulation material in particular directly, is arranged on the side surface.
- the connecting conductor material preferably extends in the vertical direction over the region of the active zone and / or is spaced apart and / or insulated from the active zone, for example by means of the insulation material, which can be arranged between the connecting conductor material and the side surface or the semiconductor functional region.
- a first electrical contact is applied to the side of the semiconductor layer sequence or the semiconductor functional areas facing away from the carrier layer.
- the first electrical contact advantageously facilitates the formation of the contact structure of the optoelectronic component to be produced in the wafer assembly.
- the first electrical contact can be provided before or after the opening or the side surface has been formed. For example, essentially every semiconductor functional region can be provided with such a first contact.
- a plurality of first contacts can optionally also be provided or formed on the semiconductor layer sequence. This is preferably done in such a way that essentially everyone is trained to train one
- Semiconductor functional area from the area of the semiconductor layer sequence provided in the semiconductor layer sequence is assigned at least one such first contact.
- the connecting conductor material is arranged in the region of the opening or the side surface in such a way that an, in particular direct, electrically conductive connection is formed between the connecting conductor material and the first contact becomes.
- the connecting conductor material and the first contact can be in direct mechanical contact.
- the opening or the side surface is designed such that the first contact can be electrically connected from the side of the semiconductor layer sequence or the semiconductor functional region opposite the first contact via the region of the opening or the region of the side surface, or that the first contact is at least partially exposed, ie that the first contact, in particular in the vertical direction, is not covered with the semiconductor layer sequence or the semiconductor functional region.
- the first contact is expediently provided here before the opening or the side surface is formed.
- a region of the semiconductor layer sequence which covers the first contact can then be removed in a targeted manner, so that the first contact is exposed and the first contact from the side of the semiconductor layer sequence or the semiconductor functional region opposite the first contact, is electrically connectable, in particular by means of the connecting conductor material.
- the first contact can cover the opening in the lateral direction, in particular completely.
- the first contact preferably has a lateral extent that is greater than that of the opening.
- the unstructured semiconductor layer sequence or the semiconductor functional areas are followed by a stabilization layer from their side facing away from the carrier layer.
- the stabilization layer is preferred on the semiconductor layer sequence or
- the stabilization layer optionally using a suitable adhesive or intermediate layer, the Semiconductor layer sequence or the
- the stabilization layer is preferably self-supporting and mechanically stabilizes the semiconductor layer sequence or the semiconductor functional areas. Furthermore, the stabilization layer can
- Such a stabilization layer can advantageously mechanically stabilize the wafer composite in such a way that the carrier layer can be dispensed with or the carrier layer can be thinned.
- the carrier layer can be at least partially thinned or, in particular completely, removed, for example by etching or grinding.
- the semiconductor functional area essentially only comprises the active zone.
- the semiconductor layer sequence can be structured into a plurality of semiconductor functional areas after the partial, in particular complete, removal or after the thinning of the carrier layer.
- the mechanical stability is preferably ensured by the previously provided stabilization layer.
- a versatile, preferably all-round, structurability of a semiconductor layer sequence on a carrier layer in the wafer composite can be achieved by a possibly multiple application in combination with the possible removal of various stabilization layers of this type.
- the stabilization layer is particularly preferably designed to be photostructurable, which can facilitate further processing.
- the stabilization layer preferably contains a photostructurable lacquer.
- the stabilization layer is arranged downstream of the semiconductor layer sequence or the semiconductor function areas before the opening or the side surface is formed. The opening or the side surface is then preferred from the side opposite the stabilization layer in the semiconductor layer sequence or
- the carrier layer is preferably removed, in particular in regions or completely, or the opening or the side surface is formed with simultaneous, suitable, in particular regionally, removal of the carrier layer.
- the carrier layer can be partially or completely removed due to the mechanically stabilizing effect of the stabilizing layer, without increasing the risk of damage to the semiconductor layer sequence or the semiconductor functional areas.
- the carrier layer is removed at least in a partial region, preferably completely, and the opening or the side surface is removed from the side facing away from the stabilization layer, in particular through the region in which the carrier layer is removed, in the semiconductor layer sequence or Semiconductor functional areas formed.
- the stabilization layer at least partially envelops and / or reshapes the semiconductor functional areas. This can advantageous protection of the semiconductor functional areas, in particular in their edge areas, against harmful external influences can be achieved during the manufacture of the optoelectronic components.
- the opening or the side surface is formed from the side opposite the carrier layer in the semiconductor layer sequence or the semiconductor functional areas.
- the semiconductor layer sequence or the semiconductor functional areas can be suitably structured from the side opposite the carrier layer by means of etching. This can take place before, after or simultaneously with the formation of the semiconductor functional areas.
- the mechanical stability of the composite is advantageously ensured by the carrier layer.
- the stabilization layer is arranged after the semiconductor layer sequence or the semiconductor functional area after the opening or the side surface has been formed.
- the stabilization layer is preferably transparent to radiation to be generated or received by the active zone.
- the stabilization layer can also be part of a subsequent encapsulation or encapsulation of the optoelectronic component without the efficiency of this component being disadvantageously reduced by absorption of the incident or emitted radiation in the material of the stabilization layer.
- the stabilization layer can be arranged after the semiconductor layer sequence or the semiconductor functional areas by means of various methods.
- the stabilization layer can be provided by a vapor deposition method, such as by a CVD or PVD process, or spin coating.
- a vapor deposition method such as by a CVD or PVD process
- spin coating Material are, for example, BCB (BenzoCycloButene), a siloxane, a silicone, a spin-on oxide, such as an aluminum oxide, for example Al 2 O 3 , or a lacquer, a glass is particularly suitable for vapor deposition, for example in the CVD process.
- the stabilization layer is optionally cured, the curing preferably at temperatures, e.g. less than 400 ° C or less than 300 ° C, which are essentially harmless to the semiconductor structure, in particular with a comparatively short curing time. This is particularly expedient if the material of the stabilization layer is applied from the liquid phase.
- the stabilization layer can also be bonded to the semiconductor layer sequence or the semiconductor functional areas, for example by means of a wafer bonding method or anodic bonding or direct bonding.
- the stabilization layer can be attached to the semiconductor layer sequence or the semiconductor function areas by means of van der Waals forces.
- the stabilization layer can be sprinkled onto the wafer composite.
- the stabilization layer can, in particular, be flat and comprise, for example, a glass plate.
- the stabilization layer can also be arranged downstream of the semiconductor layer sequence or the semiconductor functional areas by means of an adhesion-promoting layer, the adhesion-promoting layer being preferably arranged between the semiconductor functional areas and the stabilization layer and / or the semiconductor layer sequence or the semiconductor functional areas preferably connecting the stabilization layer in a mechanically stable manner.
- the stabilization layer can in particular be flat and can comprise, for example, a glass plate.
- the stabilization layer can be designed as a window layer for coupling out radiation.
- the adhesive layer can be any material.
- Form semiconductor functional areas and be part of a later encapsulation and / or encapsulation of the optoelectronic component.
- a silicone such as a siloxane, or a BCB can be used as the adhesion-promoting material.
- these materials can also be distinguished by high stability to short-wave, for example ultraviolet, radiation, high temperature resistance and / or high radiation permeability.
- the oat mediation layer can optionally be cured or cured, for example temperature-based.
- the stabilization layer can be designed as a stabilization film, which is applied to the wafer composite, in particular to the semiconductor layer sequence or
- the stabilizing film can optionally be hardened, in particular photo-hardened or temperature-hardened. After hardening, the stabilizing film preferably forms a mechanically stable, preferably self-supporting, layer. This hardened layer and / or the film is preferably transparent to radiation.
- Semiconductor functional areas mechanically stabilized via the stabilization layer such that the carrier layer, can preferably be structured from its side facing away from the stabilization layer. This structuring can be carried out, for example, using a masking process in combination with an etching process or mechanical methods such as grinding or sawing.
- Carrier layer regions emerge from the carrier layer, which form the carriers of the semiconductor functional regions in the later optoelectronic components.
- the carrier layer is particularly preferably structured in accordance with the arrangement of the semiconductor functional regions on the carrier layer, preferably at least one semiconductor functional region being arranged on essentially each carrier layer region.
- the mechanical stability of the composite comprising the stabilization layer, the semiconductor functional area and the structured carrier layer areas is advantageously ensured by the stabilization layer. If there is sufficient mechanical stability of the, in particular self-supporting, stabilization layer, the carrier layer can, if appropriate, be completely removed in accordance with the above statements.
- Semiconductor function ranges from 10 microns to 100 microns, up to 1000 microns or up to 10 mm can be produced.
- An edge length of approximately 1000 ⁇ m has proven to be particularly suitable.
- the edge length or the dimensioning of the semiconductor functional areas in the lateral direction is in principle only limited by the resolution of the structuring methods used in the production process, in particular the methods used for structuring the semiconductor layer sequence in semiconductor functional areas or the breakdown.
- a lithographic, in particular photolithographic, method with a suitably designed mask in combination with a wet or dry etching method, a laser structuring method or a mechanical structuring method such as sawing can be used.
- the complete process can be carried out with particular advantage in the wafer assembly, so that costly individual processing steps can be avoided.
- the method enables in particular the cost-effective production of complete and ready-to-use components in the wafer assembly.
- An optoelectronic component produced in this way can be positioned on a printed circuit board, in particular immediately after the separation, for example by means of a “pick and place” process, and then connected electrically. If appropriate, the component can be arranged in an additional housing, thereby further protecting the component can be increased.
- the optoelectronic component has an encapsulation which essentially hermetically seals the semiconductor functional area, in particular the active zone.
- the encapsulation preferably comprises the encapsulation of the semiconductor functional region and at least one further encapsulation element.
- the encapsulation element can advantageously be provided in the wafer composite and envelops or reshapes the semiconductor functional region, preferably from the side opposite the envelope and / or the stabilization layer. It is thus advantageously possible to dispense with an additional housing in a simplified manner with adequate protection of the component. The formation of small components without an additional housing is subsequently facilitated.
- the encapsulation element in particular an encapsulation layer, can, for example, by means of Spin coating, are applied to the wafer composite and optionally hardened or hardened, for example temperature-based.
- the encapsulation element contains a BCB.
- the encapsulation of the component can, for example, emerge from the stabilization layer when the composite is separated into components and / or can encompass part of the adhesion-promoting layer that forms the
- the composite can be separated into optoelectronic components through the stabilization layer, in particular the covering and / or the window, the insulation material and / or the adhesion-promoting layer.
- separating joints are formed before the separation, which extend into the layer that mechanically stabilizes the wafer composite.
- the parting lines can extend from the side of the composite facing away from the stabilizing layer to the stabilizing layer.
- the parting lines particularly preferably do not penetrate completely through the stabilizing layer.
- the stability of the composite is still guaranteed despite the parting lines in the stabilizing layer.
- the parting lines are preferably designed in such a way that the composite disintegrates into individual elements if the parting lines completely penetrate the stabilizing layer.
- the stabilizing layer can, for example, as described above, be designed as a stabilizing layer or be formed by the carrier layer. If the stabilizing layer is thinned, at least up to or into the parting lines, in particular from the side opposite the semiconductor functional areas and / or in the vertical direction, the wafer composite "disintegrates" into optoelectronic components or devices, because due to the thinning down to the parting lines stabilizing layer loses its mechanically stabilizing effect. Such a singulation variant is also referred to as "dicing by thinning".
- the parting lines are furthermore preferably arranged between two, in particular any, semiconductor functional areas.
- a parting line particularly preferably completely runs around a semiconductor functional area assigned to this parting line, in particular in the lateral direction.
- Semiconductor layer sequence in particular in the wafer assembly, is followed by a phosphor or an absorption substance.
- the luminous substance or absorption substance is preferably applied, in particular directly, to the semiconductor layer sequence or the semiconductor functional areas by means of electrostatic forces.
- a luminescent or absorbent layer is preferably formed.
- the substance to be applied to the semiconductor layer sequence or the semiconductor functional areas - the absorption substance or phosphor - is preferably applied to the semiconductor layer sequence or the semiconductor functional areas by means of electrostatic attraction, in particular electrostatic forces.
- electrostatic attraction in particular electrostatic forces.
- auxiliary layer Semiconductor functional area, for example, brought an auxiliary layer, which is subsequently electrostatically charged and is preferably electrically insulating.
- the substance can, for example, be used to charge the auxiliary layer charge of the same name can be charged, whereby an electrostatic attraction between the auxiliary layer and the fabric is achieved. If the substance can be polarized electrically, it is advantageously not necessary to electrically charge the substance.
- the auxiliary layer is preferably designed to be electrically insulating.
- the auxiliary layer can be formed by means of the insulation material.
- the substance is preferably applied to that side of the wafer composite which faces away from the carrier layer or the stabilization layer.
- the fabric can be applied to the composite in a suitably structured manner or can be suitably structured after the application.
- the substance to be applied can be applied in a substance mixture, which preferably has an adhesive material in addition to the absorption or phosphor material, which increases the adhesion of the substance to the semiconductor functional area or the auxiliary layer.
- the adhesive material can be hardened or hardened by raising the temperature.
- a resin such as a dry matrix polymer resin (thermoplastic), is particularly suitable as adhesive material. The mechanical connection of the substance to the semiconductor layer sequence or the semiconductor functional areas is improved by means of the adhesive material.
- the thickness of the material layer can be adjusted via the charge.
- the thickness of the material layer to be applied can be adjusted by suitable choice of the charge.
- such a method facilitates the application of a layer of fabric with a uniform thickness.
- the thickness of the fabric layer is preferably between 15 and 25 ⁇ m.
- the phosphor or the absorbent is in the Stabilization layer arranged.
- the phosphor or absorption substance can be arranged in a, preferably flat, stabilization layer, in particular a window layer.
- a filter glass plate or a glass plate doped or offset with a phosphor, in particular containing a rare earth material, can be used as the stabilization layer.
- FIG. 1 shows a first exemplary embodiment of an optoelectronic component according to the invention using a schematic sectional view
- FIG. 2 shows a second exemplary embodiment of an optoelectronic component according to the invention on the basis of a schematic sectional view
- FIG. 3 shows a third exemplary embodiment of an optoelectronic component according to the invention on the basis of a schematic sectional view
- FIG. 4 shows a first exemplary embodiment of a method according to the invention for producing an optoelectronic component on the basis of FIG. 4a to 4i intermediate steps shown in different schematic views
- FIG. 5 shows an exemplary embodiment of a device according to the invention with a plurality of optoelectronic components
- FIG. 6 shows a second exemplary embodiment of a method according to the invention for producing an optoelectronic component on the basis of intermediate steps shown schematically in FIGS. 6a to 6e,
- FIG. 7 shows a schematic sectional view of a variant of the exemplary embodiment according to FIG. 1,
- Figure 8 is a schematic sectional view of a variant of the embodiment of Figure 2 and
- FIGS. 9a to 9i on the basis of schematic sectional views and top views, different variants for the implementation of the contact structure for electrical contacting of the semiconductor functional area,
- FIG. 10 shows a third exemplary embodiment of a method according to the invention for producing an optoelectronic component on the basis of intermediate steps and shown schematically in FIGS. 10a to 10k
- FIG. 11 shows a fourth exemplary embodiment of a method according to the invention for producing an optoelectronic component on the basis of intermediate steps shown schematically in FIGS. 11a to 11g.
- FIG. 1 shows a first exemplary embodiment of an optoelectronic component according to the invention using a schematic sectional view.
- the optoelectronic component 1 comprises a semiconductor functional region 2, which is arranged on a carrier 3.
- the semiconductor functional region comprises an active zone 400 provided for generating or receiving radiation and has a lateral main direction of extent.
- the active zone can be, for example, a heterostructure, in particular a double heterostructure, a single or
- Multiple quantum well structure or include a pn junction.
- the semiconductor functional region 2, in particular its active zone 400 comprises, for example, a plurality of semiconductor layers and / or is based, for example, on GaN or GaP.
- the semiconductor functional range is based on GaP
- the optoelectronic component is preferably provided for radiation in the infrared to yellow-green spectral range and, for a semiconductor functional range based on GaN, preferably for radiation in the ultraviolet to green spectral range.
- III-V semiconductor materials based on GaP or GaN are particularly suitable for the above spectral ranges due to the high achievable internal quantum efficiency.
- InGaN or InGaAlP for example, is particularly suitable for optoelectronic components.
- the carrier 3 preferably contains a material which is suitable as a growth substrate for an epitaxial production of the semiconductor functional region or the carrier is preferably formed from a suitable growth substrate for the production of the semiconductor functional region.
- a GaP-based semiconductor functional area is, for example, GaAs or Ge
- a GaN-based one Semiconductor functional area for example you or sapphire, is particularly suitable for a growth substrate.
- the active zone 400 has an opening formed as a recess 9 which completely penetrates the semiconductor functional area.
- a connecting conductor material 8 is arranged in the area of the opening.
- the cutout is preferably completely surrounded in the lateral direction by the semiconductor functional area and is therefore laterally delimited by the semiconductor functional area.
- the semiconductor functional area is surrounded by a sheathing 4, which is preferably radiation-permeable and contains, for example, a silicone, a BCB, a glass, a spin-on oxide, such as A1 2 0 3 , or a lacquer.
- a sheathing 4 which is preferably radiation-permeable and contains, for example, a silicone, a BCB, a glass, a spin-on oxide, such as A1 2 0 3 , or a lacquer.
- a current spreading layer 5 is arranged.
- the current spreading layer advantageously has good electrical contact properties with the semiconductor material arranged, in particular adjacent, semiconductor material.
- the current spreading layer furthermore preferably has a high conductivity in the lateral direction in order to introduce a homogeneous current from the first main surface 6 of the semiconductor functional region
- Semiconductor functional area especially the active zone to facilitate. This is of particular advantage for radiation-emitting components.
- the current spreading layer is preferably characterized by high permeability to radiation to be generated in the semiconductor functional region 2 or to be received by the semiconductor functional region. This will reduce the absorption of radiation in the Current spreading layer advantageously reduced with good electrical contact properties.
- the current spreading layer contains a radiation-permeable conductive oxide, in particular a metal oxide, such as a so-called TCO (Transparent Conducting Oxide).
- TCO materials for example a zinc oxide, for example ZnO, a tin oxide, for example SnO, an indium tin oxide, for example ITO, a titanium oxide, for example TiO, or similar materials are good as because of the comparatively high conductivity in the lateral direction and high radiation transmission over a wide wavelength range Materials suitable for the current spreading layer.
- ZnO for example, is particularly suitable for contact with p-conducting semiconductor materials, in particular III -V semiconductor materials, and can form an essentially ohmic contact with them.
- the current spreading layer for. B. with a metal, such as Al in the case of ZnO, be doped.
- a metal such as Al in the case of ZnO
- SnO possibly doped with Sb
- a current spreading layer has an advantageously high conductivity in the lateral direction.
- a comparatively thick semiconductor layer integrated in the semiconductor functional area for current expansion can therefore be dispensed with. This facilitates the formation of flat components.
- the current spreading layer 5 is, preferably directly, arranged after a first contact layer 7 and is connected in an electrically conductive manner to the current spreading layer.
- the first contact layer preferably contains a metal, for example Ti, Pt, Au, Al or an alloy with at least one of these materials.
- the first contact layer is preferably formed essentially in a ring shape when viewed from above (cf. the schematic view in FIG. 4e).
- the contact layer 7 is connected in an electrically conductive manner to a connecting conductor material 8 which, for example, likewise contains a metal such as Sn.
- Sn is particularly advantageous for the production of such an optoelectronic component, in particular in the production of the connecting conductor which the connecting conductor material 8 forms (cf. the description of the exemplary embodiment in connection with FIG. 4).
- the connecting conductor material 8 extends in the vertical direction through the opening of the active zone in the semiconductor functional region 2 from the first contact layer 7 over the region of the current spreading layer 5 and the semiconductor functional region 2 and through the carrier 3 to the side of the carrier opposite the semiconductor functional region.
- the breakthrough thus preferably not only completely penetrates the semiconductor functional area, but also the carrier 3.
- the opening is preferably formed as a recess, which is particularly preferably completely delimited in the lateral direction by the carrier.
- the semiconductor functional region 2 and in particular the active zone 400 are electrically insulated from the electrically conductive connecting conductor material 8 in the region of the opening by an insulation material 10, for example containing SiN.
- an insulation material 10 for example containing SiN.
- the connecting conductor material 8 is electrically conductively connected to a first connection 11 on the side of the carrier facing away from the semiconductor functional region 2.
- a further insulation material 10a for example containing SiN, is arranged between the first connection and the carrier. This further insulation material electrically isolates the first connection from a second connection 12, which is arranged on the side of the carrier facing away from the semiconductor functional region.
- the further insulation material 10a preferably has a greater extent in the lateral direction than the first connection in order to further reduce the risk of a short circuit of the connections 11 and 12.
- connection 12 is conductively connected to the carrier, which is preferably made electrically conductive, so that the semiconductor functional region can be electrically controlled via the first connection and the second connection.
- the first and / or the second connection contain a metal, such as Ti, Pt, Al or Au. Alloys, in particular alloys with at least one of these metals, such as AuGe, are also suitable for the formation of the connections.
- the contacting of the component takes place through the semiconductor functional area and in particular the area of the active zone, which is why the insulation material 10 is preferably thick enough to prevent a short circuit of the active zone via the connecting conductor material.
- the recess is preferably fully lined with the insulation material.
- the casing 4 forms, together with the carrier 3, a protective encapsulation for the active zone or the semiconductor functional area.
- the optoelectronic component 1 shown here can be produced completely in the wafer assembly (cf. the schematic representation of the production of similar components according to the exemplary embodiment described in FIG. 4).
- the semiconductor functional region is produced, for example, epitaxially on a growth substrate from which the carrier 3 can emerge and can be provided with the current expansion layer 5 after the growth.
- the conductor structure can subsequently be formed with the opening formed as a cutout 9 as well as the insulation and connecting conductor material and the first contact layer.
- a coating material preferably in the liquid phase, is applied to the semiconductor functional region and the carrier on the side of the first main surface of the semiconductor functional region. This coating material can, for example, be vapor-deposited or applied by spin coating.
- the insulation material 10a and the first connection 11 and the second connection 12 are provided from the second main surface 13 of the semiconductor functional region, for example by vapor deposition or sputtering.
- Such a component can be manufactured in different sizes. These different sizes can also correspond to different dimensions of the contact structure of the component and in particular of the opening or recess 9.
- the lateral extent of the semiconductor functional area can range, for example, from 10 ⁇ m to a few 100 ⁇ m, approximately 200 ⁇ m, 300 ⁇ m or 400 ⁇ m. In this case, the lateral dimension, for example the diameter, of the opening or the recess is 100 or a few 100 nm to approximately 30 ⁇ m or 50 ⁇ m.
- the semiconductor functional area or the component can be contacted via connections 11 and 12, both of which are arranged on the side of the second main surface of the semiconductor functional area.
- the optoelectronic component is accordingly in particular surface-mountable.
- the connections 12 and 13 can be soldered to conductor tracks on a printed circuit board.
- An electrical contact which requires contacting the semiconductor functional area by means of a bonding wire or similarly complicated measures, can thus advantageously be dispensed with.
- the formation of very small components is subsequently facilitated.
- the carrier can be dispensed with at least partially, since the sheathing preferably has a mechanically stabilizing effect on the semiconductor functional region. Consequently, the carrier layer of the semiconductor layer sequence or the carrier of the semiconductor functional region can be at least partially or completely removed or thinned during the production of the component, which can be done for example by grinding or etching. As a result, the component height is advantageously reduced.
- the semiconductor functional area of such a component can accordingly be formed from a layer structure that can be grown, in particular epitaxially. On a carrier stabilizing the semiconductor functional area to be dispensed with. In the extreme case, the semiconductor functional area essentially comprises only the active zone 400.
- a phosphor for example in the form of phosphor particles, can also be arranged in the covering, which partially absorbs radiation generated by the semiconductor functional region and re-emits it as radiation of a greater wavelength. The two radiations can subsequently mix, so that mixed-colored light, in particular white light, can arise.
- the semiconductor functional region is preferably based on GaN, which is particularly suitable for generating short-wave, in particular blue or ultraviolet, radiation.
- the phosphor is preferably designed as a YAG-based phosphor and, for example, partially converts blue radiation into yellow radiation. White light results from a suitable mixture of the blue and yellow radiation components.
- the phosphor can be arranged on the semiconductor function region as a phosphor layer, which can be arranged between the casing and the semiconductor functional region.
- the phosphor is preferably applied to the semiconductor functional area by means of electrostatic forces.
- FIG. 2 shows a second exemplary embodiment of an optoelectronic component according to the invention using a schematic sectional view.
- the component shown here corresponds essentially to the component shown in Figure 1.
- a further insulation material 10b is arranged downstream of the current spreading layer 5 in FIG.
- This Insulation material layer can contain SiN, for example, and not only has an insulating effect, but preferably also has a protective or passivating effect on the
- the insulation material 10b is preferably also arranged on the flanks of the semiconductor functional region 2 and, with particular preference, extends in the vertical direction from the first main surface 6 to the second main surface 13 of the semiconductor functional region.
- the protection of the active zone against harmful external influences is further increased by this additional insulation or passivation layer.
- the electrical contacting of the component takes place via the first contact material 7 on the part of the first main surface 6 of the semiconductor functional region 2, which is electrically conductively connected to the connecting material 8.
- the passivation layer further protects the side flanks of the semiconductor functional area and is preferably arranged on it. Furthermore, the passivation layer 10b can be arranged on the carrier 3.
- One or a plurality of antireflection layers which may be designed as a ⁇ / 4 layer, can be arranged between the casing 4 and the semiconductor functional area, in particular between the passivation layer and the casing.
- the passivation layer can be embodied as an anti-reflection layer.
- the connecting conductor material 8 is electrically conductively connected to the first terminal 11, which on the part of the insulation material 10a
- solder layers contain AuGe, for example, and are preferably electrically conductively connected to the respective connections.
- the connection for example via soldering, of the connections 11 and 12 to external connections, for example the conductor tracks of a printed circuit board or similar external conductor devices, is facilitated via such solder layers.
- the optoelectronic component shown in FIG. 2 is provided with an encapsulation 16.
- This encapsulation comprises a window 17, which is arranged after the casing 4, which at least partially envelops the semiconductor functional area or in which the semiconductor functional area is embedded, as seen from the first main surface of the semiconductor functional area.
- the encapsulation 16 comprises an encapsulation element 18 which is arranged downstream of the casing 4 in the direction of the carrier or is arranged on the side of the semiconductor functional region opposite the first main surface.
- the encapsulation element 18 preferably grips around the carrier 3 from its side facing away from the semiconductor functional region 2, for example in the manner of pliers.
- the encapsulation element 18 can adjoin the casing 4 in the region of the second main surface 13 of the semiconductor functional region 2.
- the encapsulation 16, which can include the encapsulation 4 and the encapsulation element 18 and optionally the window 17, can advantageously be formed in the wafer composite.
- the dashed lines in FIG. 2 in the area of the casing 4 and the encapsulation element 18 indicate the boundary areas between the different parts of the encapsulation.
- the casing 4 and the encapsulation element 18 can already form an encapsulation that is essentially hermetically sealed against external influences.
- the material of the Encapsulation element can advantageously be chosen arbitrarily within the scope of the manufacturing possibilities and can in particular be designed to be substantially opaque to radiation, since in the area of the encapsulation element 18 only a small amount of radiation to be received by the semiconductor functional area or to be generated in the semiconductor functional area hits the encapsulation.
- the window 17 and the cladding 4 are preferably radiation-permeable with respect to this radiation in order to advantageously increase the efficiency of the component.
- the window 17 may contain, for example, a glass, part of a glass plate or essentially the same material as the envelope.
- the casing 4 and the window 17 can advantageously be formed in one process step.
- the casing and window can be formed in one piece in a common structure.
- the dashed line between the window and the envelope corresponds to an imaginary line.
- the dashed line indicates the border area between these elements.
- an optical element 19 is formed in the window 17.
- This optical element can advantageously already be provided in the wafer assembly.
- the window material is structured in a suitable manner.
- the casing can be shaped in particular in accordance with the design of the optical element.
- the structuring of the window can be achieved, for example, by etching processes or stamping the structure of the optical element into the window material, which may still be plastically formable after application.
- the optical element is curved in the manner of a lens and advantageously increases the efficiency of the optoelectronic component.
- a scattering element for homogeneous radiation distribution can be provided, which can be realized, for example, by means of a scattering structure, for example structured out of the window, or scattering particles, for example arranged in the window and / or the covering.
- the optical element can optionally also be designed as a Fresnel lens.
- solder layers 14 and 15 are connected to external conductors, the solder is usually exposed to high temperatures in the soldering process, so that it at least partially softens.
- the solder advantageously combines with the material of the encapsulation element in the border regions to the encapsulation element during the soldering process in such a way that the encapsulation of the optoelectronic component is further sealed.
- the parts of the encapsulation, in particular the encapsulation element 18 and the sheathing 4, are preferably such that they are essentially resistant, preferably dimensionally stable, to the temperatures occurring during the soldering, at least for a period of time which corresponds to that of the soldering process.
- the window 17 can be formed together with the casing 4 or, for example, be glued to the casing.
- the covering preferably already has an adhesion-promoting effect, so that an additional adhesive layer between the window and the covering can be dispensed with. Because of the smaller number of interfaces, this can have advantages for radiation coupling out or coupling in from or into the semiconductor functional area.
- the covering preferably contains silicone or BCB, which can have an adhesion-promoting effect with regard to the covering and the window material. This applies in particular to windows that contain a glass or are made from a glass plate.
- a phosphor in particular for generating mixed-colored light, is preferably arranged in the envelope 4 as close as possible to the active zone.
- the covering material can serve as a carrier matrix for phosphor particles, which can subsequently be applied to the semiconductor functional area together with the material of the covering. The risk of degradation of the cladding or of the window due to high-energy short-wave radiation is reduced by wavelength conversion close to the semiconductor functional area.
- a mirror layer for example a mirror layer, in particular in the
- the carrier 3 is preferably different from the growth substrate of the semiconductor layer sequence from which the semiconductor functional region is preferably formed in the wafer composite.
- the growth substrate is detached after the mirror layer has been applied to the side of the semiconductor functional region or the semiconductor layer sequence facing away from the growth substrate.
- the semiconductor functional region or the semiconductor layer sequence is attached or arranged on a carrier layer from which the carrier 3 of the thin-film component emerges when it is separated.
- the carrier 3 is in particular different from the growth substrate.
- a corresponding variant of the exemplary embodiment according to FIG. 1 is shown schematically in FIG. 7 on the basis of a sectional view.
- the metal-containing mirror layer 22, for example containing Au or Ag, is arranged between the carrier 3 different from the growth substrate and the semiconductor functional region 2.
- a connection layer 25, for example a solder layer, is preferably arranged between the mirror layer and the carrier 3, via which the
- Semiconductor functional area is mechanically stably attached to the carrier.
- the opening formed as a recess 9 in particular penetrates the semiconductor functional region 2, the mirror layer 22 and the connecting layer 25.
- the carrier 3 can also be dispensed with.
- the carrier can be thinned or, in particular completely, removed without significantly increasing the risk of damage to the semiconductor functional region. This facilitates the formation of thin optoelectronic components.
- the carrier of the semiconductor functional area is dispensed with, the encapsulation element 18 can run essentially flat on the part of the second main surface 13 of the semiconductor functional area, or the encapsulation element can be designed as a flat layer.
- FIG. 8 A corresponding variant of the exemplary embodiment according to FIG. 2 is shown schematically in FIG. 8 on the basis of a sectional view.
- the component 1 in the exemplary embodiment according to FIG. 8 is free of a carrier of the semiconductor functional region 2.
- the semiconductor functional region can be designed as a monolithically integrated, approximately epitaxizable, semiconductor layer structure. In particular, all semiconductor components of the Component be integrated monolithically.
- the encapsulation element 18 directly adjoins the second main surface of the semiconductor functional region 2. Furthermore, the encapsulation element 18 borders on the casing 4.
- Optoelectronic components as shown in FIG. 2 or the variants according to FIGS. 7 and 8, including the encapsulation, can be produced completely in the wafer assembly.
- FIG. 3 shows a further exemplary embodiment of an optoelectronic component according to the invention using a schematic sectional view.
- the optoelectronic component 1 is designed as a so-called thin-film component.
- thin-film component in this case means that the growth substrate of a semiconductor layer sequence from which the semiconductor functional region 2 is formed is removed during the production process.
- the growth substrate can be removed, for example, using a laser ablation or separation process, etching or mechanical methods.
- the semiconductor layer sequence or the semiconductor functional area is preferably provided with a mirror layer, which preferably contains metal.
- the mirror layer can improve the efficiency of the optoelectronic component.
- the mirror layer can absorb the im
- FIG. 3 shows a thin film component which can be produced entirely in the wafer assembly.
- the optoelectronic component 1 comprises a semiconductor functional area 2 with an active zone 400 and a lateral main extension direction, the semiconductor functional area having a lateral side surface 26 delimiting the active zone and a connecting conductor material 8 arranged downstream of the side surface in the lateral direction, which is arranged by the active zone 400 is electrically insulated at least in a portion of the side surface 26.
- the side surface 26 can be flat, that is to say free of a depression in the lateral direction.
- the connecting conductor material 8 is insulated from the active zone 400 in the lateral direction from the semiconductor functional region in the region of the side surface by means of the insulation material 10, which is preferably directly adjacent to the side surface 26.
- the connecting conductor material is spaced from the side surface in the lateral direction, in particular by means of the insulation material. Overall, the risk of the active zone being short-circuited by the connecting conductor material is at least greatly reduced.
- the side surface 26 preferably delimits the semiconductor functional area over its entire vertical extent.
- the semiconductor functional region 2 or the active zone 400 can also be delimited on all sides by side surfaces designed in this way.
- the semiconductor functional region 2 or the active zone 400 can be delimited by a plurality of side surfaces in the lateral direction.
- the current spreading layer 5 can comprise, for example, a TCO material, such as ZnO, or a suitable III-V semiconductor material. Since III -V semiconductor materials, In particular, those that can be produced epitaxially together with the semiconductor functional area, as a rule have a relatively low conductivity in the lateral direction, TCO materials are preferred.
- the semiconductor functional region 2 is connected in an electrically conductive manner to the connecting conductor material 8 via the current expansion layer 5 on the part of its first main surface 6.
- the connecting conductor material extends in the vertical direction from the first main area to the second main area 13 of the semiconductor functional area.
- the mirror layer 22 preferably contains a metal, for example Ti, Au, Pt, Ag, Al or an alloy with at least one of these metals, for example AuGe.
- the mirror layer 22 is preferably designed to be reflective with respect to radiation to be generated or received by the optoelectronic component and advantageously increases the efficiency of the component.
- the mirror layer can, in particular directly, be arranged on the semiconductor functional region.
- the optoelectronic component is designed, for example, as a transmitter, radiation is generated in the active zone of the semiconductor functional region during operation of the component. Radiation emitted by the active zone in the direction of the mirror is emitted by the mirror layer in the direction of the first main surface 6 of the
- Semiconductor functional region 2 reflects and can leave the component via the current spreading layer 5, the sheathing 4 and optionally via a window 17 arranged after the sheathing.
- the mirror portion 22 significantly reduces the radiation portion emerging from the component in the direction of the second main surface, so that the absorption in structures that are Mirror layer seen from the semiconductor functional area, such as a circuit board, can be arranged downstream, at least greatly reduced.
- the mirror layer 22 is on that
- the connecting conductor material 8 is conductively connected on the side of the second main surface 13 of the semiconductor functional region 2 to a further solder layer 14.
- a further insulation material 10b for example containing SiN, is arranged in the space between the further solder layer 14 and the solder layer 15, which reduces the risk of a short circuit in the electrical connections of the optoelectronic component formed by means of the solder layers.
- the semiconductor functional area is about that
- Connecting conductor material and the mirror layer and the connections or solder layers can be electrically contacted externally.
- the optoelectronic component shown has an essentially hermetic encapsulation of the semiconductor functional area.
- the semiconductor functional area is surrounded on all sides by protective materials, such as the insulation material, which preferably also serves as a passivation layer or protective layer, in the form of layers 10, 10a, 10b.
- This protective structure is only interrupted in the area of the electrical contacts.
- the solder layers preferably connect to the insulation material and thus advantageously further increase the protection of the semiconductor functional area.
- the insulation material can e.g. fuse with the solder layers.
- the semiconductor functional area is at least partially surrounded by the casing 4 or embedded in the casing, which further increases the protection of the semiconductor functional area.
- the cladding 4 is radiation-transmissive to radiation to be generated or received by the semiconductor functional region and can contain, for example, a silicone or a BCB, a silicone being distinguished by a particularly advantageous resistance to short-wave, in particular ultraviolet, radiation or a material different from the materials mentioned , include encapsulation material applied by means of vapor deposition or spin coating.
- the window 17 arranged downstream of the covering can be part of a glass plate, for example, which is connected to the covering material by means of an adhesive connection, for example likewise via a silicone or siloxane.
- the casing 4 and the window 17 can, however, also be made of essentially the same material and, in particular, be made in one piece, which is indicated by the dashed line (cf. the corresponding explanations for the exemplary embodiment according to FIG. 2).
- connection conductor material 8 arranged layer 22a contains, for example, the same material as the mirror layer, which can have advantages in the production of the component in the wafer composite.
- the same mask structure can in particular be used for the application of the solder layers and the mirror layer.
- the mirror layer and the solder layers can particularly advantageously contain the same material, for example AuGe.
- the optoelectronic component can also comprise an additional encapsulation element which, on the part of the second main surface, approximately corresponds to that shown in FIG Encapsulation element 18 is provided.
- an encapsulation element can advantageously further increase the protection of the semiconductor functional area against harmful external influences.
- the gradation shown in FIG. 3 between the current spreading layer 5 and the semiconductor functional area 2, like the bevel on the edge of the semiconductor functional area, can facilitate the application of the insulation material 10.
- the risk of breaks in the insulation material, which can occur on steep edges, and thus the risk of a short circuit, can be advantageously reduced by appropriately trained gradations or bevels, for example the structures to be coated with the insulation material 10 or other materials, for example the connecting conductor material 8.
- the window 17 and / or the cladding 4 preferably have such a stabilizing effect with respect to the semiconductor functional area that during the manufacture of the component a carrier layer arranged in the wafer composite on the part of the second main surface - for example the growth substrate of the semiconductor layer sequence - is completely removed and subsequently the mirror layer 22 on the second main surface 13 can be applied.
- FIG. 4 schematically shows an exemplary embodiment of a method according to the invention for producing optoelectronic components on the basis of various views and intermediate steps. The production of a component similar to the component shown in FIG. 2 is shown.
- a semiconductor layer sequence 200 which comprises a lateral main extension direction and an active zone 400 provided for radiation generation and / or reception, is on a carrier layer 300, as shown in Figure 4a, provided.
- the carrier layer 300 is, for example, given by the growth substrate on which the
- Semiconductor layer sequence 200 was grown epitaxially.
- the semiconductor layer sequence is based on at least one III-V semiconductor material system.
- the growth substrate can contain, for example, GaAs in the case of GaP or GaAs-based semiconductor layer sequences, SiC or sapphire in the case of GaN-based semiconductor layer sequences.
- the wafer assembly thus provided or the semiconductor layer sequence of the wafer assembly is structured in such a way that a plurality of
- Semiconductor functional regions 2 are formed, which are arranged on the common carrier layer 300 spaced apart from one another by intermediate spaces 20 (FIG. 4b).
- the interspaces 20 form an essentially cross-lattice-like pattern, for example when viewed from above on the carrier layer.
- the structuring of the semiconductor layer sequence 200 in semiconductor functional areas 2 takes place, for example, by means of photolithographic structuring methods in combination with etching methods, laser structuring or other known structuring methods, such as saws.
- a photoresist layer is first applied to the side of the substrate facing away from the carrier layer
- the semiconductor layer sequence can be structured from the side opposite the carrier layer by wet or dry chemical etching become. After the structuring of the semiconductor layer sequence into a plurality of semiconductor functional areas, the photoresist material can be removed.
- the gaps 20 can also extend from the representation in FIG. 4b into the carrier layer 300.
- ZnO can be doped with Al, Sn0 2 or SnO with Sb to increase the conductivity.
- the current spreading layer 5 can be applied in a structured manner to the semiconductor functional areas by means of a mask structure, for example a corresponding photoresist mask to be removed again after the current spreading layer has been applied.
- the current spreading layer 5 can be on the side of the carrier layer 300 facing away from the
- Semiconductor layer sequence 200 before the structuring of the semiconductor layer sequence in semiconductor functional areas preferably applied over the entire surface.
- a structuring of the semiconductor layer sequence and the current processing layer which is required in this case can advantageously be carried out in one method step, in particular using a common mask.
- the current spreading layer is preferably applied by means of vapor deposition, in particular sputtering
- the semiconductor functional regions 2 are preferably covered over almost the entire area with the current spreading layer.
- gradations can be formed at the edge of the semiconductor functional areas between the semiconductor functional areas and the current spreading layer, as a result of which the risk of damage, for example due to crack formation, for elements to be arranged in the peripheral area of the semiconductor functional area in the further course of production is reduced.
- the semiconductor functional areas or the current spreading layer can have a bevel, in particular on the edge, for this purpose.
- the structure is structured with semiconductor functional areas and current spreading layer in such a way that a breakthrough through the active zone is formed as a recess 9.
- the recess 9 extends through the
- the current spreading layer can be applied to the semiconductor functional area or the semiconductor layer sequence in a pre-structured manner or can be pre-structured accordingly after the application.
- a cutout in the current spreading layer can have a larger lateral dimension than a cutout subsequently produced in the semiconductor functional area by the area of the cutout current spreading layer.
- the recess 9 in the semiconductor functional region 2 and / or in the current expansion layer 5 can be formed, for example, by means of a masking and a subsequent etching process or another suitable structuring method.
- a first contact layer 7, for example containing a metal such as Ti, Pt or Au, is applied to the side of the current expansion layer 5 facing away from the semiconductor functional region 2.
- the application can take place, for example, by sputtering or vapor deposition, in particular using an appropriately designed mask.
- the first contact layer is preferably applied in a structured manner in accordance with the cutout 9 or is structured accordingly after its application. In the latter case, the structuring of the contact layer is preferably carried out in one step with the formation of the recess 9, in particular using a common mask.
- a gradation between the current expansion layer and the semiconductor functional region is preferably formed in the region of the recess.
- the first contact layer can then, in a manner different from that shown in FIG. 4c, extend at the step of the current spreading layer along the side of the current spreading layer facing away from the semiconductor functional area in the vertical direction to the semiconductor functional area.
- the wall of the recess in the current expansion layer can be lined with the material of the first contact layer. In this way, the contact area between the current spreading layer and the contact layer can be increased further without significantly increasing the area of the active zone shaded by the contact layer.
- Semiconductor functional region which forms the breakthrough through the active zone 400, is deepened further in the vertical direction into the carrier layer, which can again be achieved, for example, by masking and etching processes.
- the resulting structure is shown schematically in Figure 4d.
- the cutout is preferably structured into the carrier layer at the same time as the cutout in the semiconductor functional area and the current spreading layer, so that the cutout 9 shown in FIG. 4c can already extend into the carrier layer.
- FIG. 4e shows a top view of the structure from FIG. 4d.
- the semiconductor functional regions 3 covered with the current spreading layer 5 are here essentially square and are separated from one another by a coherent network of spaces 20.
- the cutouts 9 in the semiconductor functional region are essentially circular and are arranged in the region of the corners of the respective semiconductor functional regions.
- the first contact layer 7 is arranged around the recesses 9 and preferably runs around the recess.
- the arrangement of the cutouts in the corner regions of the semiconductor functional regions advantageously increases the efficiency of a later optoelectronic component, since the central area of the active zone is in the middle of the Semiconductor functional area, which generally has a particularly high quantum efficiency with regard to radiation generation or radiation reception, is advantageously essentially free of the contact layer 7 and is therefore not covered by this. Absorption by a metallic contact layer in this central area of high efficiency is thus largely avoided.
- the lateral dimension, for example the diameter or an edge length, of the recess 9 can range from, for example, 100 nm to approximately 100 ⁇ m.
- a plurality of cutouts can also be provided in a semiconductor functional area.
- the lateral dimension can be adapted to the respective requirements as part of the manufacturing process.
- An insulation material 10 for example containing a silicon nitride such as SiN, is subsequently applied to the structure shown in FIG. 4d.
- the insulation material can, for example, be applied to the entire structure of the structure shown in FIG. 4d.
- a vapor deposition method such as sputtering or PECVD, is suitable for applying the insulation material.
- the insulation material lines the wall of the recess at least in the region in which the wall of the recess is formed by the semiconductor functional region.
- the application of the insulation material to the wall of the recess can be facilitated by a correspondingly bevelled wall or bevelled walls of the recess.
- the insulation material is subsequently structured, for example by means of a photolithographic process in conjunction with an etching process, in such a way that the first contact layer 7 is free of at least in a partial area Insulation material 10 is. If necessary, the structuring can also be carried out by backsputtering.
- the insulation material can also be applied in a correspondingly structured manner to the structure shown in FIGS. 4d or 4e using a suitable mask.
- the resulting structure is shown schematically in FIG. 4f using a sectional view. Because the insulation material still partially covers the first contact layer on its side facing away from the carrier layer, the risk is reduced that the active zone in the semiconductor functional region 2 is free of the insulation material when structuring the insulation material or applying it in a structured manner. Overall, the risk of a short circuit in the active zone is thus reduced via a connecting conductor material 8 which is subsequently to be introduced into the cutout 9.
- the connecting conductor material 8 contains, for example, a metal, in particular Sn, and is preferably introduced into the recess 9 in such a way that it is essentially completely filled with the connecting conductor material.
- Tin-containing materials, in particular Sn are particularly suitable as connecting conductor material, since, particularly with comparatively small lateral dimensions of the recess, for example due to capillary forces, they can “pull themselves into” the recess and / or completely fill it.
- the connecting conductor material can be introduced into the recess by galvanic filling, filling from the vapor phase or alloying a solder. Furthermore, a suitable shaping of the edge, for example an impression produced by means of wet or dry chemical etching, in particular rounding, of the edge of the cutout makes it easier for a liquid connecting conductor material, in particular Sn, to be drawn into the cutout.
- the connecting conductor material is preferably arranged in the vertical direction in such a way that it extends from the side of the semiconductor functional region with the first contact layer through the region of the active zone
- the connecting conductor material is particularly preferably arranged in the recess as far as into the carrier layer.
- the connecting line material fills the recess. In the area of the first contact layer that is free of the insulation material 10, this is
- Connection conductor material electrically connected to the first contact layer.
- the resulting structure is shown schematically in FIG. 4g using a sectional view.
- the semiconductor functional region 2 is with the
- the insulation material 10 reshapes the semiconductor functional region 2 or the current expansion layer 5 in partial regions and furthermore forms an advantageous protective or passivation layer for the semiconductor functional region, particularly in the vertical direction in the edge region of the semiconductor functional region. Furthermore, the insulation material is designed to be electrically insulating with respect to the active zone and the connecting conductor material and advantageously avoids a short circuit of the active zone via the connecting conductor material during later operation of the component.
- a covering 4 preferably applied over the entire surface, which at least partially envelops the semiconductor functional areas and in particular in the spaces 20 between two semiconductor functional areas can be arranged ( Figure 4h).
- the covering can be applied, for example, by means of spin coating, vapor deposition, sputtering.
- a coating 4 containing BCB can be provided by spin coating, for example.
- the covering is preferably applied in a liquid and / or plastically formable phase and subsequently converted into a solid, mechanically stable phase, which can be achieved, for example, by increasing the temperature and hardening or hardening of the covering material.
- This can preferably be carried out at temperatures which are harmless to the semiconductor functional range. This temperature is preferably below 300 ° C., particularly preferably below 200 ° C.
- a window layer 170 is arranged downstream of the casing, as seen from the semiconductor functional area.
- the window layer is preferably designed to be radiation-permeable with respect to the radiation to be generated or received by the semiconductor functional region and is furthermore distinguished by high mechanical stability.
- the window layer 170 can thus, possibly in cooperation with the casing 4, form a stabilization layer for the semiconductor functional areas on the carrier layer 300.
- the covering 4 and the window layer 170 are advantageously formed from the same material and / or in one piece, so that an additional application of a stabilizing layer is avoided. Rather, in this case the covering is designed as a stabilization layer and as a window layer.
- a radiation-permeable varnish for example an aluminum oxide-containing varnish, which is applied by means of spin coating and subsequently cured, is particularly suitable for this because of the high radiation permeability and the high mechanical stability.
- the given all in one piece Execution of the stabilizing window layer and covering is indicated in Figure 4h by the dashed line.
- a separate window layer 170 for example a glass plate, which is connected to the casing 4, preferably mechanically stable.
- This can be achieved, for example, by means of an adhesive connection, which is particularly preferably formed by means of a sheathing 4 that promotes adhesion to the window layer, so that an additional adhesion-promoting layer can be dispensed with.
- This adhesion-promoting covering can contain, for example, a silicone or a BCB.
- Such a stabilization layer formed from the encapsulation and / or the window layer, can advantageously stabilize the entire wafer assembly with the semiconductor functional areas and the carrier layer in such a way that the carrier layer 300 mechanically stabilizing the semiconductor functional areas is dispensed with and this can be at least partially removed or thinned.
- the stabilizing layer particularly preferably has a stabilizing effect such that the entire carrier layer can be removed. The manufacture of very thin optoelectronic components is thus facilitated.
- FIG. 4h shows the resulting structure on the basis of a schematic sectional view with a heavily thinned carrier layer 300.
- the stabilizing effect of the covering and the window layer is illustrated by the orientation of the structure rotated by 180 ° compared to FIG. 4g.
- the carrier layer is preferably thinned at least to the extent that the connecting conductor material in the cutout 9 can be electrically connected from the second main surface 13 of the semiconductor functional region 2.
- the carrier layer can be thinned or completely removed, for example by grinding or other, for example mechanical or. chemical, structuring methods, such as etching, can be achieved.
- the structure shown in FIG. 4h can subsequently be structured from the second main surface 13 of the semiconductor functional areas in such a way that the carrier layer 300 and / or the insulation material 10 in the region of the intermediate spaces 20 is removed (FIG. 4i).
- This can be achieved, for example, by means of masking and etching.
- Structuring is preferably carried out at least up to or into the material of the covering 4, for example by completely removing the carrier layer in some areas.
- the area in which the carrier layer is removed can, preferably completely, encircle the semiconductor functional area.
- an insulation layer 10a is provided before or after this structuring, which, viewed from the semiconductor functional region, is followed by a first connection 11 which, by means of the insulation layer 10a, also extends from the second main surface to the carrier layer or Semiconductor functional area is electrically insulated with the second terminal 12 applied completely removed.
- Semiconductor functional region 2 is conductively connected to the first connection 11 via the connecting conductor 8 and the current spreading layer 5 on the part of the first main surface 6, while the second main surface 13 of the semiconductor functional region is connected to the second connection 12, possibly via the carrier 3, which emerges from the structured carrier layer, is conductively connected.
- An encapsulation material 180 is then provided from the second main surface 13 of the semiconductor functional region.
- the encapsulation material is preferably arranged that it comes into direct contact with the wrapping material 4.
- the encapsulation material can be spun on and, if necessary, subsequently cured.
- the encapsulation material which is preferably initially applied over the entire surface, is provided with a structure which permits the application of solder layers 14 and 15 to the connections.
- the encapsulation material is removed or recessed in some areas above the connections 11 or 12.
- the encapsulation element is advantageously designed to be photostructurable, so that an additional photoresist layer can be omitted.
- the solder layers 14, 15, for example containing AuGe are preferably connected in an electrically conductive manner to the connections 11 and 12 and / or can be produced by means of vapor deposition or a galvanic process.
- FIG. 4i The resulting structure is shown in FIG. 4i using a schematic sectional view. Is along the lines 21 shown in dashed lines in Figure 4i, e.g. on film, isolated, this creates a component that is completely manufactured at wafer level, can be connected on the main surface and has a hermetically sealed encapsulation with respect to the active zone. In particular, the component can be surface-mounted.
- the stabilization layer in particular the sheathing, if appropriate through the window layer and the encapsulation element, is used for isolation.
- Separation marks eg saw marks, can be formed in the elements mentioned due to the separation.
- An optical element such as a lens corresponding to the component shown in FIG. 2 or a microstructure which increases or decreases the light coupling in or out, can also be formed in the wafer composite in the window layer 170, for example by a microlithographic method, for example by means of etching, or stamping ,
- a stabilization layer that stabilizes the wafer composite can also be used several times.
- a first stabilization layer which is preferably designed to be photostructurable, can be applied and, if necessary, hardened, a second stabilization layer, which is preferably designed to be photostructurable, can be applied and, if necessary, hardened, a second
- the Stabilization layer are removed.
- the first stabilization layer is expediently removed after the hardening of the second stabilization layer and is arranged on the side of the semiconductor functional region opposite the first stabilization layer.
- a, in particular metal-containing, mirror layer is applied and subsequently the semiconductor layer sequence on the side of the mirror layer is arranged and / or fastened, for example via gluing or a wafer bonding process.
- the carrier layer can then be removed so that a mirror layer is arranged between the additional carrier layer and the semiconductor layer sequence.
- the additional carrier layer and / or the mirror layer can be processed in a further method in accordance with the carrier layer from FIG.
- the growth substrate of the semiconductor layer sequence which can be encompassed by the carrier layer, is preferably replaced in this case (cf. the in FIG. 7 embodiment shown, in which the carrier 3 according to the above explanations would then emerge from the additional carrier layer when separated).
- a device with a plurality of optoelectronic components can also be produced according to this method.
- FIG. 5 shows an exemplary embodiment of a device according to the invention on the basis of a schematic sectional view.
- connections 11 and 12 of the, for example three, optoelectronic components 1 arranged next to one another in the lateral direction are each conductively connected to external connections 23 and 24.
- the arrangement of the optoelectronic components corresponds to that of the semiconductor functional areas 2 in the wafer assembly.
- the device shown is mechanically stabilized by the encapsulation 16 formed by the one-piece, continuous casing 4 and / or the encapsulation element 18 and protected against harmful external influences.
- Such a device can emerge from the structure shown in FIG. 4i if this structure is isolated in such a way that the resulting optoelectronic component or then the device comprises a plurality of semiconductor functional areas, which can be arranged, in particular, as an array.
- the active zone of the semiconductor functional areas has not been shown in FIG. 5 for reasons of clarity.
- the carrier 3 of the semiconductor functional areas can also be dispensed with if the casing 4 is suitably designed as a stabilization layer or an additionally provided stabilization layer, for example a window layer. If the encapsulation element is made sufficiently thin, the formation of high-performance components or an array of high-performance components is facilitated, since heat dissipation of the heat loss generated during operation, for example to an external heat sink, on which the
- High-performance component can be arranged and / or fastened, is improved through the encapsulation element.
- the high-performance component can be designed, for example, as a laser or high-performance luminescence diode.
- the external connections which conductively connect the individual semiconductor functional areas, can optionally be integrated by means of lithography, in particular microlithography, into the assembly shown in FIG. 5, in particular into the encapsulation element, whereby a small and compact design of the device can be achieved in a simplified manner.
- the surface of the encapsulation element facing away from the semiconductor functional areas can be structured accordingly and the external connections can be arranged in the formed structure, for example as metallizations.
- the metallization can take place, for example, by means of a galvanic process.
- a plurality of devices or a device can be conductively connected to one or more individual optoelectronic components.
- the device and the component can optionally be operated together.
- An optoelectronic component which essentially corresponds to that shown in FIG. 3 can also be produced in accordance with a method which is slightly modified compared to that shown in FIG.
- the connecting conductor material and the insulation material are arranged, for example, in the region of the opening through the active zone in the spaces 20 in FIG. 4b.
- the edge regions of the semiconductor functional regions are preferably stepped or chamfered accordingly in order to facilitate the arrangement of the insulation material and / or the connecting conductor material.
- the carrier layer is preferably completely removed from the structure held by the stabilization layer, so that subsequently a metal-containing, in particular metallic, mirror layer can be applied to the semiconductor functional region on the part of the second main surface.
- FIG. 6 A corresponding exemplary embodiment of a production method for an optoelectronic component is shown in FIG. 6 using the intermediate steps shown schematically in FIGS. 6a to 6e.
- a wafer composite with a semiconductor layer sequence 200 arranged on a carrier layer 300, which comprises an active zone 400 provided for generating or receiving radiation, is provided.
- the carrier layer can be provided, for example, by the growth substrate on which the semiconductor layer sequence has been grown epitaxially.
- the semiconductor layer sequence 200 is subsequently structured, for example by means of a photolithographic process in conjunction with an etching process, into a plurality of semiconductor functional regions 2 spatially separated from one another by spaces 20 (cf. FIG. 6b).
- the active zone of the semiconductor layer sequence 200 is subsequently structured, for example by means of a photolithographic process in conjunction with an etching process, into a plurality of semiconductor functional regions 2 spatially separated from one another by spaces 20 (cf. FIG. 6b).
- the active zone of the semiconductor functional regions 2 spatially separated from one another by spaces 20 (cf. FIG. 6b).
- FIG. 6 shows only a single semiconductor functional area 2.
- One is applied to the semiconductor functional areas 2 or the still unstructured semiconductor layer sequence 200
- Semiconductor layer sequence in semiconductor functional areas and the current spreading layer in one process step for example using a common mask.
- the current spreading layer does not necessarily have to contain a TCO material.
- a metal-containing, in particular metallic and / or absorbing, current widening structure can also be provided, which can be designed for homogeneous current injection into the active zone.
- a homogeneous current impression can be achieved by appropriately designing the current expansion structure, for example with metallic fingers running out of a metallic central region and / or a metallic frame structure that runs around the edge region of the semiconductor functional region, preferably completely.
- the current widening structure preferably does not completely cover the surface of the semiconductor functional region facing away from the carrier layer, so that at least a partial region of the surface, in particular the first main surface 6, of the semiconductor functional region is free of the current widening structure. This allows a homogeneous current impression in the
- An insulation material 10 for example a silicon nitride, a silicon oxide or a silicon oxynitride, is subsequently arranged in the region of the side surfaces 26.
- the insulation material preferably extends, in particular directly, on the side surface 26 of the semiconductor functional region 2 along the first main surface 6 of the semiconductor functional region opposite the carrier layer 300 in the vertical direction past the active zone in the direction of the carrier layer or as far as the carrier layer.
- the insulation material is preferably applied over the entire surface, for example by sputtering, and is then removed in some areas in an area overlapping with the surface of the semiconductor functional area facing away from the carrier layer, in particular the current spreading layer, and / or in the area of the intermediate space 20.
- the beveling of the semiconductor functional area or the gradation between the current spreading layer and the semiconductor functional area facilitate the application of the insulation material and reduce the risk of cracking in the insulation material layer formed by means of the insulation material.
- a connecting conductor material 8 for example Ti, Pt, Au or an alloy containing at least one of these metals, is arranged, which is electrically conductively connected to the semiconductor functional area on the part of its first main surface 6 via the current-conducting layer , Evaporation is suitable for this purpose, in particular by means of a suitably designed mask.
- the connecting conductor material extends in the edge region of the semiconductor functional region along the insulation material and along the side surfaces 26 over the region of the active zone 400 to the second main surface 13 of the Semiconductor functional area 2. A direct contact between the two components
- Connection conductor material and the active zone is prevented by the insulation material.
- An anti-reflective coating or some other optical coating comprising one or a plurality of layers can optionally also be applied to the side of the structure in FIG. 6b facing away from the carrier layer. Excessive refractive index jumps to a material to be subsequently applied, which are associated with reflection losses in radiation to be emitted or received by a finished optoelectronic component, can be reduced by an antireflection coating.
- the insulation material can be designed as an anti-reflection layer, for example as a ⁇ / 4 layer.
- a radiation-transmissive stabilization layer 500 is arranged on the structure from FIG. 6b from the side of the semiconductor functional regions 2 facing away from the carrier layer 300.
- the stabilization layer is applied by means of spin coating and solidified, for example by subsequent, in particular temperature-based, curing.
- a spin on oxide or a varnish is particularly suitable for this as a material for the stabilization layer.
- the stabilization layer is preferably formed in one piece. If appropriate, the stabilization layer can also be formed in two or more pieces, for example from a window layer and an envelope, preferably with respect to the window layer, for example according to the embodiment described in connection with FIG. 4. This is indicated by the dashed line in the schematic sectional view in FIG. 6c.
- the stabilization layer forms the
- Semiconductor functional areas partially and mechanically stabilize the wafer composite in such a way that the stabilizing Carrier layer can be dispensed with.
- the carrier layer is subsequently completely removed, for example by means of an etching process or a laser ablation or separation process, so that the composite is accessible for further processing on the part of the second main surface 13 of the semiconductor functional areas
- an, in particular electrically conductive, mirror layer 22 for example containing a metal or an alloy, such as AuGe, is arranged on the semiconductor functional region.
- the resulting structure is shown on the basis of a schematic sectional view in FIG. 6d.
- the mirror layer 22 can be applied, for example, by vapor deposition or sputtering, in particular by means of a suitably designed mask.
- the mirror layer is preferably applied in such a way that layers 22a made of the material of the mirror layer are arranged on the connecting conductor 8 exposed on the side of the second main surface, which layers particularly preferably have a thickness comparable to the thickness of the mirror layer or whose thickness is equal to that of the mirror layer.
- the mirror layer is conductively connected to the semiconductor functional region on the side of its second main surface 13 and the layer 22a on the side of its first main surface 6.
- AuGe is characterized by particularly advantageous electrical contact properties with semiconductor materials, in particular III-V materials, for example based on GaP, on the one hand and with metal-containing materials, such as the connecting conductor material on the other hand with high reflectivity.
- the mirror layer is advantageously designed to be reflective with respect to radiation to be generated in the semiconductor functional area or to be received by the latter.
- the efficiency of a e.g. Radiation-emitting component can be increased by increased and more directed radiation coupling out of the component.
- a further insulation material 10a preferably initially over the entire surface, is subsequently arranged on the side of the composite opposite the stabilization layer.
- the material is preferably identical to the insulation material 10 and / or the further insulation material 10a contains a silicon nitride, a silicon oxide or a silicon oxynitride.
- An insulation material 10a initially applied over the entire surface can be removed in regions in the region overlapping with the connecting conductor material 8 or the semiconductor functional region 2, for example by means of wet or dry chemical etching.
- a solder material can subsequently be arranged in the removed areas such that a first solder layer 14 and a second solder layer 15 are formed.
- the first solder layer is conductively connected to the semiconductor functional region on the side of the first main surface - via the layer 22a, the connecting conductor material 8 and the current expansion layer 5 - and the second solder layer is conductively connected to the semiconductor functional region on the side of the second main surface 13 via the mirror layer 22.
- the semiconductor functional area is protected on all sides by protective structures, in particular the insulation materials 10 and 10a and the mechanically stable one
- Stabilization layer surrounded and therefore encapsulated, for example hermetically.
- the encapsulation is only left out in partial areas for contacting purposes.
- lines 21 can optoelectronic components with a single semiconductor functional area or in a device with a plurality of
- Semiconductor functional areas for example by means of saws and / or on film.
- the separation takes place in the area of the spaces 20 and in particular through the stabilization layer and the insulation materials 10 and 10a.
- an additional protective housing can be dispensed with.
- an additional encapsulation element possibly similar to element 180 from FIG. 4, can optionally be provided in conjunction with the second main surface. Since the contacting or mounting of the component on a carrier plate, for example on a circuit board, is provided on the part of the second main surface and this mounting side is only exposed to a reduced extent to harmful external influences compared to the first main surface, an additional encapsulation element can be dispensed with without significantly increasing the risk of damage to the component.
- the encapsulation of the semiconductor functional area can be further sealed by an, in particular intimate, connection of the further insulation material 10a to the solder material, which is formed during the assembly, in particular surface assembly, of the thin-film component, for example by means of soldering on a printed circuit board.
- an optical element can also be formed in the stabilization layer or a luminescence conversion substance can be arranged in the material of the stabilization layer. Also further features described in the previous exemplary embodiments can relate to the method according to FIG. 6.
- FIG. 9 shows, in FIGS. 9a to 9i, on the basis of schematic sectional views and schematic top views, different variants for the implementation of the contact structure for the electrical contacting of the semiconductor functional area.
- FIG. 9 The elements shown in FIG. 9 can all be implemented completely in the wafer composite.
- FIG. 9a shows a schematic plan view of the first main surface 6 of the semiconductor functional region 2 and FIG. 9b shows an associated schematic sectional view of a section along the line A-A.
- the breakthrough through the active zone 400 of the semiconductor functional region 2 is designed as a lateral depression 27.
- the depression 27 is in particular designed as an indentation of a side surface 28 of the semiconductor functional region 2.
- Insulation material 10 insulates the active zone 400 from the connecting conductor material 8 which is arranged in the lateral recess and is electrically conductively connected to the first contact 7 on the first main surface 6 of the semiconductor functional region.
- the connecting conductor material extends along the semiconductor functional area in the direction of the second main surface opposite the first main surface 6 with respect to the active zone or in the direction of the carrier layer of the wafer composite.
- the carrier layer and the second main surface are not explicitly shown in FIGS. 9a and 9b (cf. the ones described in more detail above
- the variant shown here is particularly suitable for a component according to the exemplary embodiments shown in FIGS. 1, 2, 7 and 8 if necessary, however, can also be used in a component according to FIG. 3.
- openings can first be produced in the semiconductor layer sequence 200 of the wafer composite, which openings are preferably formed as, in particular laterally, on all sides through the
- Semiconductor layer sequence limited, recesses 9 are executed (cf. the schematic plan view of a wafer composite shown in Figure 9c).
- the openings are then preferably filled with connecting conductor material 8.
- an insulation material 10 is arranged in the area of the opening beforehand, which can line a wall of the opening and / or can electrically insulate the perforated active zone from the connecting conductor material.
- the semiconductor layer sequence 200 can then be structured in semiconductor functional areas 2.
- the openings are preferably structured such that the semiconductor functional regions 2 have a depression in the lateral direction, for example according to FIGS. 9a and 9b. This is indicated in FIG. 9c by the dashed lines, along which the semiconductor layer sequence is preferably structured in semiconductor functional areas 2.
- Connecting conductor material 8 and / or the insulation material 10 in the area of the openings also take place after the structuring of the semiconductor layer sequence in semiconductor functional areas.
- the semiconductor functional region 2 is free of a depression in the lateral direction.
- the insulation material 10 is arranged on a flat side surface 26 that laterally delimits the active zone 400.
- the connecting conductor material 8 is electrically conductively connected to the first main surface 6 and extends in the vertical direction to the second main surface 13 of the semiconductor functional region 2. On the side of the second main surface, the connecting conductor material is electrically conductively connected to the first connection 11. A direct electrical contact between the
- connection conductor material 8 or the first connection 11 and the second main surface 13 is avoided by the insulation material 10.
- the second main surface is electrically conductively connected to the second connection 12.
- the insulation material 10 preferably has a greater extension in a direction parallel to the side surface 26 than the connecting conductor material 8.
- Such a contact structure is particularly suitable, for example, for a component shown in FIG. 3.
- the connecting conductor material in FIGS. 9d and 9e runs on one side in the vertical direction, that is to say along an individual side face 26 of the semiconductor functional region 2.
- the connecting conductor material is arranged on all sides around the semiconductor functional region 2 in the lateral direction.
- FIG. 9h shows a sectional view of a further variant of the contact structure.
- the connecting conductor material 8 is with the first main surface 6 of the
- Insulation material 10 with respect to a direct electrical contact to the semiconductor functional region 2 isolated on the second main surface 13 thereof.
- the connecting conductor material forms a first Port 11 off.
- a separate first connection and / or a separate further insulation material can be provided instead of a single-piece design of the first connection 11 and / or the connecting conductor material 8 (see, for example, FIG. 1).
- the opposite terminal of the diode contact is formed by the second connection 12, which is connected to the second main surface 13, in particular directly, in an electrically conductive manner.
- the connecting conductor material 8 encompasses the
- Semiconductor functional region 2 preferably in the form of a bracket. If the connecting conductor material is arranged in the region of an opening 29 through the active zone 400, the contact structure shown is particularly suitable for a component according to FIGS. 1, 2, 7 or 8. If the connecting conductor material extends along a side surface 26 delimiting the active zone in the lateral direction, the contact structure shown in FIG. 9h is particularly suitable for a component according to FIG. 3.
- FIG. 9i A further variant of the contact structure of the semiconductor functional region 2 is shown schematically in FIG. 9i on the basis of a sectional view.
- the first contact 7 and a second contact 30 are arranged on a common side of the semiconductor functional region 2, in particular on the side facing away from the carrier layer or on the side facing away from a carrier of the component.
- a connecting conductor material 8 which is connected to the first contact and which is insulated from the active zone 400 via the insulation material 10 extends in the direction of the second main surface and another one connected to the second contact 30 Connection conductor material 8a in the direction of the second main surface.
- a further insulation material 10a which acts both protectively and passivating with respect to the semiconductor functional region 2, in particular on its flank, and also reduces the risk of a short circuit in the active zone via the second contact 30.
- Semiconductor layer sequence can be structured, for example by suitable etching in the wafer assembly, in such a way that the active zone, as shown in FIG. 9i, can be electrically contacted by means of contacts 7 and 30 arranged on a common side of the semiconductor functional area.
- the contacts 7 and 30 are electrically conductively connected to the active zone 400, in particular from different sides of the active zone.
- the connecting conductor material 8 can either extend in the region of the opening 29 or along the side surface 26 laterally delimiting the active zone, the opening being preferably designed as a recess in the semiconductor functional region, which is delimited laterally on all sides by the semiconductor functional region.
- FIG. 10 shows a third exemplary embodiment of a method according to the invention for producing an optoelectronic component using intermediate steps shown schematically in FIGS. 10a to 10k.
- a semiconductor layer sequence 200 which is arranged on a carrier layer 300 and has an active zone 400 provided for generating or receiving radiation, is provided in the wafer assembly.
- the carrier layer 300 is preferably formed from the growth substrate on which the semiconductor layer sequence 200 has been grown epitaxially.
- the Semiconductor layer sequence on GaN An SiC or a sapphire carrier layer, for example, is particularly suitable for this purpose as the growth substrate.
- growth substrates containing sapphire are usually less expensive than growth substrates containing silicon carbide, although sapphire often has a significantly lower electrical conductivity than SiC. If the carrier layer 300 is removed in the course of the production process and / or if the carrier layer is not involved in the electrical contacting of the optoelectronic component to be produced, then a sapphire substrate is expediently used.
- the semiconductor layer sequence in particular the active zone, preferably contains InGaN. Furthermore, the active zone for efficient radiation generation or for efficient radiation reception can be designed as a multiple quantum well structure.
- the thickness of the semiconductor layer sequence can be, for example, 10 ⁇ m or less, preferably 6 ⁇ m or less.
- the semiconductor layer sequence 200 furthermore has a first main surface 6 and a second main surface 13 lying opposite the first main surface with respect to the active zone 400, the semiconductor layer sequence 200 being arranged on the carrier layer 300 on the part of the second main surface 13.
- a first contact layer 700 is applied to the side opposite the carrier layer 300, in particular to the first main surface 6, of the semiconductor layer sequence 200.
- a first layer 710 of the first contact layer 700 is preferably first applied to the semiconductor layer sequence, which is advantageously particularly suitable for forming an electrical contact with the semiconductor layer sequence.
- a second layer 720 of the contact layer 700 is applied to the first layer, the material of which can advantageously be chosen comparatively freely compared to that of the first layer. In particular, a material which is less expensive than the material of the first layer can be used for the second layer.
- the first layer 710 is between the first layer 710 and the first layer 710
- the contact layer 700 is applied to the semiconductor layer sequence 200 by means of vapor deposition, for example.
- a Pt-containing or first layer 710 containing or consisting of Pt is particularly suitable for establishing good electrical contact with GaN-containing materials.
- this layer can be made comparatively thin, for example with a thickness of 100 nm, preferably 40 nm, or less.
- an Au-containing layer is particularly suitable as the second layer. Au is comparatively inexpensive compared to Pt.
- the second layer 720 preferably has a thickness that is greater than that of the first layer 710.
- the second layer 720 preferably determines the current carrying capacity of the contact due to the greater thickness.
- the second layer preferably has a thickness that is greater than 500 ⁇ m, particularly preferably greater than 800 ⁇ m.
- a second layer with a thickness of 1000 ⁇ m has proven to be particularly suitable.
- the semiconductor layer sequence 200 preferably has different conduction types on the two sides arranged opposite one another with respect to the active zone 400.
- the semiconductor layer sequence 200 is p-type on the side opposite the carrier layer 300 and n-type on the side facing the carrier layer. This can be done by suitable doping of the Semiconductor layer sequence, in particular during the epitaxy process, can be achieved. Pt is particularly suitable for making electrical contact with p-conducting materials based on GaN.
- the first contact layer 700 is preferably applied over the entire surface to essentially the entire surface of the semiconductor layer sequence 200 facing away from the carrier layer.
- the contact layer 700 is structured such that a plurality. is formed by first contacts 7.
- Such structuring can take place, for example, by means of an etching process, for example wet or dry etching, and / or backsputtering, optionally in combination with a suitably designed mask, for example a photoresist mask or a hard mask, in particular a metal mask.
- Etching is particularly suitable for structuring an Au-containing second layer 720
- back-sputtering is particularly suitable for structuring a Pt-containing first layer 710.
- a common mask can optionally be used for structuring the first and second layers.
- the first contact layer 700 is preferably structured into first contacts 7 such that essentially every area of the surface of the semiconductor layer sequence that is provided for the surface of a later semiconductor functional area has at least one such first contact 7.
- An exemplary semiconductor functional area with a first contact 7 is delimited by the lines drawn in broken lines in FIG. 10c.
- Two, preferably any, first contacts arranged adjacent to one another on the semiconductor layer sequence are preferably free of a direct electrically conductive connection to one another.
- the first contacts 7 have, in particular in each case, a central region 70 and preferably at least one, particularly preferably a plurality of, laterally spaced from the central region, electrically conductively connected to the central region (s) 71.
- Partial areas of the surface of the semiconductor layer sequence spanned by the first contact can thus in particular be free of a contact structure covering them, so that radiation coupling out over these partial areas not covered by the first contact is not reduced by absorption in the first contact.
- a flat, comparatively homogeneous current injection into the active zone 400 is achieved via the first contact 7, since a plurality of contact points, for example the contact points formed by the partial regions 71, are produced between the first contact and the semiconductor layer sequence.
- the contact points of the first contact are preferably arranged comparatively closely next to one another for homogeneous energization of the active zone in the lateral direction.
- a homogeneous energization of the active zone can optionally also be achieved by using a
- FIGS. 10d and 10e show two variants of a first contact 7 on the basis of schematic partial views of the first main surface 6 of the semiconductor layer sequence 200.
- the partial areas 71 are each connected via a web 72 to the central area 70.
- a common web 72 connects the partial regions 71, which run finger-like, in particular on both sides of the web, to the central region in an electrically conductive manner.
- the partial area 71 is designed as a frame encircling the central area 70, which frame is electrically conductively connected to the central area 70 via a plurality of webs 72, which extend from the central area, in particular radially outward.
- the dashed lines in FIGS. 10d and 10e each delimit an area of the semiconductor layer sequence 200 provided for the formation of a semiconductor functional area.
- the first contact 7 can also be designed as a grid contact, for example in the form of a regular grid, for example a rectangular or square grid.
- Different partial areas 71 can therefore intersect at grid points of the grid.
- a lattice point is preferably formed as a central region 70 with a lateral extension that is larger than the lateral extension of the partial regions 71.
- the semiconductor layer sequence 200 is followed by a window layer 170, for example a glass plate, in particular a borosilicate glass plate, on its side facing away from the carrier layer 300, in particular on the part of the first main surface 6.
- a window layer 170 for example a glass plate, in particular a borosilicate glass plate, on its side facing away from the carrier layer 300, in particular on the part of the first main surface 6.
- the window layer 170 is preferably attached to the semiconductor layer sequence 200, in particular the wafer composite, by means of an adhesion-promoting layer 800, for example containing BCB.
- Both the window layer 170 and the adhesion-promoting layer 800 are preferably designed to be radiation-permeable with respect to radiation to be received or generated by the active zone 400.
- the adhesion-promoting layer can be applied, for example in the liquid phase, for example by means of spin coating, to the wafer composite or the window layer.
- the window layer is subsequently attached to the layer 800 by means of the adhesion-promoting layer
- the window layer can be pressed onto the composite provided with the adhesion-promoting layer, for example by applying pressure.
- the adhesion-promoting layer 800 is preferably distinguished both by the adhesion-promoting effect on the window layer 170 and also on the semiconductor layer sequence 200 and / or the first contact 7.
- the adhesion-promoting layer can be, for example, by a temperature-based method, e.g. can be fully or fully cured by heating to a temperature between 200 ° C and 300 ° C. As a result, the stability of the mechanical connection of the window layer to the semiconductor layer sequence or the wafer composite can be increased.
- the adhesion-promoting layer can have a thickness of 500 nm or less, preferably 300 nm or less. A thickness of approximately 100 nm has proven to be particularly suitable.
- the window layer 170 can mechanically stabilize the semiconductor layer sequence 200 in such a way that the mechanically stabilizing effect of the carrier layer 300 can be dispensed with.
- the window layer is expediently self-supporting, in particular with a suitably large thickness.
- the window layer has a thickness of 200 ⁇ m or less, preferably 100 ⁇ m or less.
- the window layer is therefore preferably designed as a stabilization layer.
- the carrier layer 300 can subsequently be detached, FIG. 10g.
- the Detachment can take place, for example, by means of a laser liftoff method. Such a method is particularly suitable for detaching a sapphire-containing carrier layer from a GaN-containing semiconductor layer sequence.
- the semiconductor layer sequence 200 is due to the detachment of the entire carrier layer 300 on it
- the carrier layer can optionally be thinned or removed in certain areas, since its mechanically stabilizing effect can be dispensed with.
- the detachment of the entire carrier layer advantageously facilitates the formation of thin optoelectronic components.
- the semiconductor layer sequence in particular from its side facing away from the stabilization layer, is structured in such a way that a plurality of semiconductor functional regions 2 spatially separated from one another are formed.
- Such structuring can be carried out by means of etching, for example wet or dry etching, optionally using a suitably designed mask, in particular a photoresist mask.
- the mask can be arranged on the second main surface 13 and removed after the structuring.
- Dry etching is particularly suitable for the formation of comparatively narrow spaces, for example with a lateral dimension of 50 ⁇ m or less. Structures with a lateral dimension of up to approximately 10 ⁇ m can be produced particularly efficiently using dry etching. The narrower the intermediate space, the less advantageously the structurally induced loss of semiconductor material.
- the opening is preferably designed as a recess 9 in the respective semiconductor functional region 2.
- the openings and the semiconductor functional areas can advantageously be formed using a common mask.
- the opening through the active zone is expediently produced in such a way that the cutout 9 extends from the second main surface 13 to the first main surface 6 and the first contact 7, in particular its central region 70, at least partially, preferably completely, covers the opening. If necessary, it can be structured up to or into the first layer of the first contact 7 facing the first main surface.
- an insulation material 10 is applied to the composite from the side of the composite facing away from the stabilization layer, FIG. 10g.
- the insulation material can contain or consist of Si3N- j , for example.
- sputtering or a PECVD process is particularly suitable for applying the insulation material.
- the insulation material is preferably applied over the entire surface to the side of the composite facing away from the stabilization layer.
- the insulation material 10 forms an insulation layer, in particular a thickness of less than 500 nm, preferably of 400 nm or less. A thickness of 330 nm has proven to be particularly advantageous.
- the insulation material 10 preferably substantially completely lines the wall of the recess and has a protective and passivating effect on the flanks of the semiconductor functional region with respect to the active zone 400 exposed there. Essentially, the entire exposed surface is preferred Semiconductor functional areas 2, in particular the entire exposed surface of the composite, are coated with the insulation material 10.
- the insulation material is then removed from the composite in some areas, FIG. 10h.
- At least a partial area of the first contact 7, in particular a partial area of the central area 70, of the semiconductor functional areas is preferably freed from the insulation material 10.
- the insulation material 10 can also be removed from the area in some areas such that the adhesion-promoting layer 800 is exposed in the area of the spaces.
- the insulation material in the intermediate space is preferably laterally circumferentially removed, in particular in each case, the entire semiconductor functional region 2 in such a way that the adhesion-promoting layer 800 is exposed circumferentially around the respective semiconductor functional region 2.
- semiconductor functional area 2 preferably remains covered with insulation material 10 and is subsequently protected.
- the insulation material 10 is preferably removed in some areas by the second main areas 13 of the semiconductor functional areas 2 such that the second main area 13 of the respective semiconductor functional area 2 is exposed in a partial area.
- This structuring of the insulation material 10 can take place, for example, by means of etching, in particular wet or dry etching, optionally in combination with a suitably designed mask. Dry etching is particularly suitable for this.
- a second connection 12 for example containing a metal such as Ti, Pt, Au, Al, Ag or an alloy with at least one of these materials, is arranged in the region of the semiconductor functional region 2 which has been freed from the insulation material the semiconductor functional area is directly electrically conductively connected on the part of the second main surface.
- the second connection 12 can also be embodied in multiple layers, with a plurality of individual layers.
- the second connection comprises a first connection layer, which is designed for efficient electrical contact formation on the part of the second main surface 13 to the semiconductor material, and one on that of the semiconductor material, for example that of the
- the second connection layer can protect the first connection layer. If, for example, a solder layer is applied to the side of the second connection layer facing away from the first connection layer, by means of which a component can be soldered to external connection means, the second connection layer advantageously protects the first connection layer from damage by the melted solder.
- the second connection layer can accordingly be designed as a barrier, in particular a solder barrier. The risk of damage to the electrical contact of the first connection layer with the semiconductor material is subsequently reduced.
- the first connection layer of the second connection can, for example, have two partial layers, for example a first partial layer, arranged on the part of the semiconductor material and comprise a second partial layer which is arranged on the side of the semiconductor material opposite the first partial layer.
- a first partial layer, approximately 3 nm thick, made of Ti and a subsequent second partial layer, approximately 200 nm thick, made of Al are particularly suitable for GaN-based semiconductor materials.
- the second connection layer of the second connection can also have a plurality of partial layers.
- a second connection layer with three sublayers is particularly suitable for GaN-based semiconductor materials.
- a first partial layer of Ti approximately 50 nm thick
- a second, approximately 100 nm thick, second partial layer of Pt is preferably arranged on this first partial layer, which in turn is followed by a third, partial layer of Au, approximately 1000 nm thick.
- a second connection layer designed in this way is particularly suitable as a solder barrier.
- Connecting conductor material 8 for example containing a metal, such as Ti, Pt, Au, Al, Ag, Sn or an alloy with at least one of these materials, arranged such that the connecting conductor material 8 with the first contact 7 and thus with the first main surface 6 of the
- Semiconductor functional area 2 is electrically conductively connected.
- the connecting conductor material is preferably in direct mechanical contact with the first contact.
- the connecting conductor material can be arranged in the opening, for example by means of vapor deposition.
- Connection conductor material is particularly suitable for Au.
- the recess 9 is preferably filled with connecting conductor material in such a way that the recess is completely filled and the connecting conductor material on the part of the second main surface 13 forms a first connection 11, which preferably has a lateral extension that is greater than that of the opening.
- the first connection and the connecting conductor can thus in particular be made in one piece.
- the connecting conductor material 8 is electrically insulated from the active zone just like the first connection from the second main surface 13 via the insulation material 10, so that a short circuit of the active zone via the connecting conductor material or of the two connections via the second main surface is avoided when the component is started up.
- the first and the second connection are arranged on the side of the second main surface 13 and spaced apart from one another in the lateral direction.
- the connecting conductor formed via the connecting conductor material 8 and / or the first connection 11 can also be made in multiple layers.
- the connecting conductor is preferably made of one layer and / or contains Au, for example.
- a first connection 11 can be arranged on the connecting conductor, which can comprise a plurality of connection layers, for example in accordance with the above explanations for the second connection.
- a second connection layer of the first connection can preferably be dispensed with, so that the connection conductor material on the side of the second main surface is followed by a first connection layer comprising a first partial layer, for example made of Ti, and a second partial layer, for example made of Al.
- the connecting conductor material and / or the connections can be applied to the composite, for example, by means of a lift-off process.
- an encapsulation layer 180 is applied to the composite, FIG. 10i.
- the encapsulation layer 180 is applied from the side remote from the stabilizing layer side of the composite ⁇ forth on the semiconductor functional areas.
- the encapsulation layer reshapes the semiconductor function areas 2.
- the encapsulation layer encompasses the semiconductor function areas preferably with a pair of pliers.
- the encapsulation layer 180 is preferably designed to be radiation-transmissive, since it extends in the vertical direction over the region of the active zone 400 and thus strikes the encapsulation layer to an increased extent in the radiation to be received or generated in the active zone. Absorption losses in the encapsulation layer 180 can thus be reduced.
- the encapsulation layer 180 for example containing a BCB, is preferably applied to the composite by means of spin coating, in particular over the entire surface, and optionally, for example by increasing the temperature, is cured or preferably completely cured.
- the encapsulation layer preferably covers the entire side of the composite facing away from the stabilization layer and is arranged in particular in the region of the interstices 20.
- the encapsulation layer 180 is preferably in direct mechanical contact with the adhesion-promoting layer 800.
- the encapsulation layer in the region of the connections can be removed.
- the removal can, for example, by means of etching, for example Dry etching is carried out using a suitably designed hard mask, for example a hard mask containing metal, in particular an aluminum mask or one consisting of aluminum.
- a fluorine-based etchant, such as Freon, is particularly suitable as an etchant for this.
- an aluminum layer can first be arranged over the entire surface on the side of the composite facing away from the stabilization layer, in particular on the encapsulation layer 180.
- a photoresist layer is applied to the side of the hard mask facing away from the semiconductor functional region and structured via suitable exposure and development in such a way that the regions in which the encapsulation layer is to be removed are free of photoresist.
- the aluminum layer in the areas not covered with photoresist for example by wet chemical etching, can be removed, as a result of which the hard mask is formed.
- the encapsulation layer in the areas not covered by the hard mask layer can then be removed by dry etching.
- the hard mask is then preferably removed from the composite.
- solder layers 14 and 15 such as Au or Sn, or an alloy with at least one of these materials, e.g. AuSn containing, are applied, which are electrically conductively connected to the respective connection.
- the solder layers can be applied, for example, using a lift-off process.
- encapsulated optoelectronic components can be separated, which can be connected to an external circuit board immediately after the separation from the wafer assembly.
- the optoelectronic component is designed in particular as a thin-film component and is produced entirely at the wafer level in the wafer assembly (wafer assembly). Cost-intensive individual processing steps and wire bonding can advantageously be dispensed with.
- separation joints are produced during the process, which preferably protrude into the stabilizing layer from the side of the bond that stabilizes the bond, in this exemplary embodiment window layer 170, in the present exemplary embodiment.
- the parting lines are produced in the area of the spaces 20 and / or by means of dry etching.
- such separating joints are preferably formed in such a way that they reach through the encapsulation layer, the adhesion-promoting layer into the window layer, but do not penetrate them completely.
- the stabilizing effect of the window layer is preferably not impaired by the separating joints protruding into it. For separating the layer stabilizing the composite on the
- FIG. 10J Such an optoelectronic component 1 is shown schematically in FIG. 10J and 10k after being separated in a sectional view in FIG. 10J and a view of the solder layer side.
- FIG. 10j corresponds to a sectional view along the line A-A from FIG. 10k.
- the encapsulation of the active zone 400 of the component is formed by the section 80, which emerges from the adhesion-promoting layer 80 when separated, and the encapsulation element 18, which emerges from the encapsulation layer 180 when separated.
- the window 17 which emerges from the window layer 170 when it is separated preferably mechanically stabilizes the component 1.
- the semiconductor functional region 2 can have a square design with an edge length of 1000 ⁇ m resulting from FIG. 10j.
- the height of the component is 120 ⁇ m, for example.
- the edge length of the entire component which in particular can be essentially square, can be 1010 ⁇ m to 1050 ⁇ m.
- the information in FIGS. 10j and 10k are of course not restrictive, but are merely to be regarded as exemplary information.
- the first connection, the second connection and / or the connecting conductor can furthermore be designed as a reflective layer for the radiation to be generated or received by the component, as a result of which the efficiency of the component is advantageously increased.
- FIG. 11 shows a fourth exemplary embodiment of a method according to the invention for producing an optoelectronic component using intermediate steps shown schematically in FIGS. 11a to 11g.
- a wafer composite is provided with a semiconductor layer sequence 200 arranged on a carrier layer 300 and having an active zone 400 provided for generating or receiving radiation, FIG. 11a.
- the wafer composite is designed in accordance with the statements relating to FIG. 10.
- a first contact layer 700 is applied, which preferably has a first layer 710 and a second layer 720 (cf. the explanations relating to FIG. 10).
- the first contact layer 700 is structured into a plurality of regions spatially separated from one another by the intermediate spaces 31, FIG. 11b.
- etching and / or backsputtering is suitable, for example.
- the first main surface 6 of the semiconductor layer sequence 200 facing away from the carrier layer is exposed in the region of the intermediate spaces 31.
- the subregions of the first contact layer 700 form a plurality of first contacts 7 for the semiconductor layer sequence 200.
- a first contact 7 is particularly preferably assigned to at least each area of the semiconductor layer sequence 200 provided for the formation of a semiconductor functional area. On the part of the first main surface 6
- Semiconductor layer sequence preferably p-conductive and preferably n-conductive on the part of the second main surface 13 opposite the first main surface 6 with respect to the active zone 400.
- the thickness of the p-type side e.g. 0.5 ⁇ m, is preferably smaller than that of the n-conducting side, e.g. 5 ⁇ m.
- the semiconductor layer sequence 200 in particular in the areas freed from the first contact layer 700, is structured such that a plurality of semiconductor functional areas 2 arranged next to one another on the carrier layer 300 are formed, FIG. 11c.
- a dry etching method is particularly suitable for this.
- the semiconductor functional regions 2 are spaced apart from one another by spaces 20, which can optionally extend into the carrier layer 300.
- a cutout 32 is formed in the first contact of the semiconductor functional areas. If necessary, the cutout 32 can already take place with the formation of the intermediate spaces 31 in the first contact layer in a common method step, in particular using a common mask.
- each semiconductor functional area has at least one breakthrough.
- the breakthrough can be produced using dry etching, for example.
- the opening is preferably designed as a recess 33 which does not completely penetrate the semiconductor functional region 2 in the vertical direction. The opening is thus on the side of the second main surface 13, in particular on the side of the carrier layer 300, in the vertical direction from the semiconductor material Semiconductor functional range limited, the breakthrough can have a diameter of 10 microns, for example.
- Insulation material 10 is applied to the wafer composite, preferably over the entire surface, of the side of the semiconductor functional areas facing away from the carrier layer 300.
- the insulation material lines the wall of the opening, in particular in the area of the active zone, but preferably completely.
- the insulation material is subsequently removed from the composite in some areas.
- a dry etching method in combination with a suitable mask is particularly suitable for this.
- a semiconductor material of the semiconductor functional region 2 is exposed in the region of the opening, in particular at the bottom of the recess, which is preferably arranged on the side of the active zone 400 which lies opposite the penetration point of the opening in the semiconductor functional region 2.
- the insulation material is preferably removed in regions in the area of the interspaces.
- the carrier layer 300 can be exposed.
- the insulation material 10 particularly preferably remains on the flanks of the semiconductor functional regions, so that they are protected by the insulation material.
- the insulation material 10 is removed from the first contact 7 in a connection area which is preferably laterally spaced from the opening.
- a connecting conductor material 8 is then arranged in the recess 33.
- the connecting conductor material 8 occurs with the semiconductor functional area, in particular at the bottom of the recess, in the area of the opening in which the insulation material 10 has been removed, in conductive contact.
- the connecting conductor material is electrically insulated from the active zone 400 and the first main area 6.
- the recess is preferably filled with the connecting conductor material 8 such that the connecting conductor material essentially completely fills the recess and is arranged on the first main surface 6 of the semiconductor functional region on the side of the insulation material 10 facing away from the semiconductor functional region.
- the lateral extension of the connecting conductor material on the part of the first main surface is preferably larger than the lateral extension of the opening.
- a further insulation material 10a is subsequently applied to the composite from that side of the composite which mechanically stabilizes the composite support layer 300.
- the insulation material 10a is subsequently preferably removed in some areas such that the first contact 7 is exposed again, in particular in the connection area in which the insulation material 10 has already been removed. Furthermore, the insulation material 10a is removed from the connecting conductor, so that it is accessible for further processing.
- the further insulation material 10a preferably extends in the vertical direction at the edge of the connecting conductor material.
- the further insulation material 10a is preferably in direct mechanical contact with the insulation material 10 in the region of the connecting conductor.
- a first connection 11 and a second connection 12 are then applied to the semiconductor functional areas 2 of the composite in such a way that the first connection 11 in the connection area with the first contact 7 and the second Connection 12 is connected to the connecting conductor material 8, in particular directly, in an electrically conductive manner, FIG. 11f.
- the remaining area of the first contact 7 can be covered with insulation material 10 and / or 10a.
- the second connection 12 can therefore preferably be made larger than the connecting conductor on the part of the first main surface 6 and is electrically insulated from the first contact 7 and the first connection 11 by means of the insulation material 10 and / or 10a.
- a path-like connection structure of the first and / or second connection 12 can be realized in this way without significantly increasing the risk of a short circuit.
- a covering 4 is applied to the composite from the side of the composite facing away from the carrier layer 300.
- the casing is spun on and / or contains BCB. If necessary, the covering can be cured after application, for example by heating, in particular in an oven.
- the covering 4 preferably covers the composite, particularly preferably completely.
- the casing 4 can subsequently be structured such that the first connection 11 and the second connection 12 are exposed, FIG. 11g.
- separating joints 34 are preferably formed, which extend from the side of the casing 4 facing away from the carrier layer into the carrier layer 300 stabilizing the composite.
- the backing will but preferably not completely penetrated by the parting lines.
- the carrier layer preferably still ensures the mechanical stability of the composite.
- the parting lines 34 are expediently produced in a common method step, in particular using a common mask, with the exposure of the first and second connection.
- solder layers 14 and 15 are applied to the first connection 11 and the second connection 12.
- the carrier layer 300 can extend from its side facing away from the semiconductor functional areas 2 to the parting lines 34 or into them, e.g. be thinned to the dashed line from FIG. 11g, which causes the composite to be separated into optoelectronic components.
- the parting lines are preferably arranged all around the semiconductor functional areas 2.
- the separation can also be carried out by sawing or breaking.
- the carrier layer 300 is preferably transparent to the radiation to be generated in or received by the active zone 400.
- Sapphire for example, is inexpensive and transparent to radiation, in particular for radiation generated by means of GaN-based semiconductors. Radiation can accordingly be coupled into or out of the component via the carrier layer or a carrier layer piece of the component formed therefrom during singulation.
- the first contact, the first connection, the second connection and / or the connecting conductor material can be particularly reflective for the active contact Zone generated or received by this radiation. As a result, the efficiency of the optoelectronic component can be increased further.
- the elements mentioned, in particular the first contact, can thus be designed as a mirror layer.
- the insulating materials and / or the covering are preferably transparent to radiation.
- removal of the carrier layer 300 is not necessarily necessary, so that a method step for removing the carrier layer can be dispensed with.
- the method without removing the carrier layer is less expensive than a method in which the carrier layer is removed due to the smaller number of process steps.
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Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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KR1020067019264A KR101228428B1 (ko) | 2004-02-20 | 2005-02-18 | 광전 소자, 다수의 광전 소자를 구비한 장치 및 광전 소자를 제조하기 위한 방법 |
US10/588,167 US8835937B2 (en) | 2004-02-20 | 2005-02-18 | Optoelectronic component, device comprising a plurality of optoelectronic components, and method for the production of an optoelectronic component |
EP05706767.0A EP1716597B1 (de) | 2004-02-20 | 2005-02-18 | Optoelektronisches bauelement, vorrichtung mit einer mehrzahl optoelektronischer bauelemente und verfahren zur herstellung eines optoelektronischen bauelements |
JP2006553430A JP5305594B2 (ja) | 2004-02-20 | 2005-02-18 | 光電素子、多数の光電素子を有する装置および光電素子を製造する方法 |
KR1020127015400A KR101332771B1 (ko) | 2004-02-20 | 2005-02-18 | 광전 소자, 다수의 광전 소자를 구비한 장치 및 광전 소자를 제조하기 위한 방법 |
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DE102004008853.5 | 2004-02-20 | ||
DE102004008853 | 2004-02-20 |
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WO2005081319A1 true WO2005081319A1 (de) | 2005-09-01 |
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PCT/DE2005/000281 WO2005081319A1 (de) | 2004-02-20 | 2005-02-18 | Optoelektronisches bauelement, vorrichtung mit einer mehrzahl optoelektronischer bauelemente und verfahren zur herstellung eines optoelektronischen bauelements |
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US (1) | US8835937B2 (de) |
EP (1) | EP1716597B1 (de) |
JP (2) | JP5305594B2 (de) |
KR (2) | KR101332771B1 (de) |
CN (2) | CN1922733A (de) |
DE (1) | DE102005007601B4 (de) |
TW (2) | TWI347022B (de) |
WO (1) | WO2005081319A1 (de) |
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JP4657374B1 (ja) * | 2010-06-16 | 2011-03-23 | 有限会社ナプラ | 発光ダイオード、発光装置、照明装置及びディスプレイ |
DE102009059887A1 (de) | 2009-12-21 | 2011-06-22 | OSRAM Opto Semiconductors GmbH, 93055 | Optoelektronischer Halbleiterchip |
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KR101332771B1 (ko) | 2013-11-25 |
JP2007523483A (ja) | 2007-08-16 |
CN101685823A (zh) | 2010-03-31 |
KR20070004737A (ko) | 2007-01-09 |
TW200536151A (en) | 2005-11-01 |
DE102005007601A1 (de) | 2005-09-08 |
DE102005007601B4 (de) | 2023-03-23 |
EP1716597B1 (de) | 2018-04-04 |
JP5305594B2 (ja) | 2013-10-02 |
US20090065800A1 (en) | 2009-03-12 |
CN101685823B (zh) | 2012-04-18 |
JP5355536B2 (ja) | 2013-11-27 |
KR20120085318A (ko) | 2012-07-31 |
JP2011049600A (ja) | 2011-03-10 |
CN1922733A (zh) | 2007-02-28 |
TWI317180B (en) | 2009-11-11 |
TW200729557A (en) | 2007-08-01 |
US8835937B2 (en) | 2014-09-16 |
EP1716597A1 (de) | 2006-11-02 |
TWI347022B (en) | 2011-08-11 |
KR101228428B1 (ko) | 2013-01-31 |
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