JP5355536B2 - 光電素子および光電素子の製造方法 - Google Patents
光電素子および光電素子の製造方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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Description
図2には、概略的な断面図に基づいて本発明による光電素子の第2の実施例が示されており、
図3には、概略的な断面図に基づいて本発明による光電素子の第3の実施例が示されており、
図4には、図4a〜4iにおいて、種々の概略的な図で示された中間ステップに基づく、光電素子の本発明による製造方法の第1の実施例が示されており、
図5には、多数の光電素子を有する、本発明による装置の実施例が示されており、
図6には、図6a〜6eにおいて、概略的に示された中間ステップに基づく、光電素子の本発明による製造方法の第2の実施例が示されており、
図7には、図1に示された実施例の別形態の概略的な断面図が示されており、
図8には、図2に示された実施例の別形態の概略的な断面図が示されており、
図9には、図9a〜9iにおける、概略的な断面図及び平面図に基づいて、半導体機能領域の電気的な接触接続のための接触接続構造体を構成する種々の形態が示されており、
図10には、図10a〜10kにおいて、概略的に示された中間ステップに基づく、光電素子の本発明による製造方法の第3の実施例が示されており、
図11には、図11a〜11gにおいて、概略的に示された中間ステップに基づく、光電素子の本発明による製造方法の第4の実施例が示されており、
同種類のエレメントおよび同じ作用を有するエレメントにはこれらの図面において同じ参照番号が付与されている。
Claims (10)
- 光電素子であって、
前記光電素子は、アクティブゾーンおよびラテラル方向のメイン延在方向を有する半導体機能領域を含んでおり、
前記半導体機能領域は、前記アクティブゾーンを貫通する複数の孔部を有しており、前記複数の孔部の領域内に接続導体材料が配置されており、
前記接続導体材料は、前記アクティブゾーンから、各孔部の少なくとも部分領域において電気的に絶縁されており、
前記半導体機能領域は、支持体上に配置されており、
前記支持体は、その上に前記半導体機能領域がエピタキシャルに製造されている成長基板とは異なっており、
前記支持体は導電性に構成されており、かつ、前記光電素子の電気的接触接続に関与している、
ことを特徴とする光電素子。 - 前記接続導体材料は、前記半導体機能領域に対向している支持体面まで延在している、請求項1記載の光電素子。
- カバー部を有しており、前記カバー部は、前記半導体機能領域を少なくとも部分的に包囲するまたは取り囲む、
請求項1または2項記載の光電素子。 - 前記光電素子は、個別化された素子であり、
前記カバー部は、前記個別化が原因で、分断痕を有している、
請求項3記載の光電素子。 - 前記半導体機能領域の後ろには、少なくとも吸収材料または発光材料が配置されている、
請求項1から4までのいずれか1項記載の光電素子。 - カバー部を有しており、前記カバー部は、前記半導体機能領域を少なくとも部分的に包囲するまたは取り囲み、
前記半導体機能領域の後ろには、少なくとも吸収材料または発光材料が配置されており、
前記吸収材料または発光材料は、前記カバー部内に配置されている、
請求項1または2記載の光電素子。 - 前記吸収材料または発光材料は、直接的に前記半導体機能領域上に配置されている、
請求項5記載の光電素子。 - 前記アクティブゾーンは、一重量子井戸構造または多重量子井戸構造を含んでいる、
請求項1から7までのいずれか1項記載の光電素子。 - 前記複数の孔部は、前記半導体機能領域を貫通する、
請求項1から8までのいずれか1項記載の光電素子。 - 請求項1から9までのいずれか1項記載の光電素子の製造方法であって、以下のステップを特徴とする、すなわち、
a)支持体層上に配置された半導体層列を伴うウェハ結合体を準備し、前記半導体層列はアクティブゾーンおよびラテラル方向のメイン延在方向を有しており、
b)前記アクティブゾーンを貫通する複数の孔部が生じるように前記半導体層列を構造化し、
c)前記アクティブゾーンが、各孔部の少なくとも部分領域において電気的に接続導体材料から絶縁されるように、前記接続導体材料を前記複数の孔部の領域内に配置し、
d)光電素子に個別化し、ここで前記光電素子の電気的な接触接続は少なくとも部分的に前記接続導体材料を介して行われる、
ことを特徴とする、光電素子の製造方法。
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US (1) | US8835937B2 (ja) |
EP (1) | EP1716597B1 (ja) |
JP (2) | JP5305594B2 (ja) |
KR (2) | KR101228428B1 (ja) |
CN (2) | CN1922733A (ja) |
DE (1) | DE102005007601B4 (ja) |
TW (2) | TWI317180B (ja) |
WO (1) | WO2005081319A1 (ja) |
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DE102005007601A1 (de) | 2005-09-08 |
JP5305594B2 (ja) | 2013-10-02 |
TWI347022B (en) | 2011-08-11 |
US8835937B2 (en) | 2014-09-16 |
KR20120085318A (ko) | 2012-07-31 |
US20090065800A1 (en) | 2009-03-12 |
WO2005081319A1 (de) | 2005-09-01 |
TW200536151A (en) | 2005-11-01 |
JP2011049600A (ja) | 2011-03-10 |
KR20070004737A (ko) | 2007-01-09 |
CN1922733A (zh) | 2007-02-28 |
CN101685823A (zh) | 2010-03-31 |
DE102005007601B4 (de) | 2023-03-23 |
CN101685823B (zh) | 2012-04-18 |
KR101228428B1 (ko) | 2013-01-31 |
KR101332771B1 (ko) | 2013-11-25 |
JP2007523483A (ja) | 2007-08-16 |
TWI317180B (en) | 2009-11-11 |
EP1716597B1 (de) | 2018-04-04 |
EP1716597A1 (de) | 2006-11-02 |
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