WO2005034586A1 - 電界発光素子 - Google Patents
電界発光素子 Download PDFInfo
- Publication number
- WO2005034586A1 WO2005034586A1 PCT/JP2004/010631 JP2004010631W WO2005034586A1 WO 2005034586 A1 WO2005034586 A1 WO 2005034586A1 JP 2004010631 W JP2004010631 W JP 2004010631W WO 2005034586 A1 WO2005034586 A1 WO 2005034586A1
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- WO
- WIPO (PCT)
- Prior art keywords
- light
- light emitting
- organic
- organic layer
- electroluminescent device
- Prior art date
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000001989 lithium alloy Substances 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 229910001629 magnesium chloride Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- AOLPZAHRYHXPLR-UHFFFAOYSA-I pentafluoroniobium Chemical compound F[Nb](F)(F)(F)F AOLPZAHRYHXPLR-UHFFFAOYSA-I 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
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- 239000004645 polyester resin Substances 0.000 description 1
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- 229920002098 polyfluorene Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003220 pyrenes Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical class C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- ZOYIPGHJSALYPY-UHFFFAOYSA-K vanadium(iii) bromide Chemical compound [V+3].[Br-].[Br-].[Br-] ZOYIPGHJSALYPY-UHFFFAOYSA-K 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- HTPBWAPZAJWXKY-UHFFFAOYSA-L zinc;quinolin-8-olate Chemical compound [Zn+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 HTPBWAPZAJWXKY-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/88—Terminals, e.g. bond pads
Definitions
- the present invention relates to an electroluminescent device in which at least a light emitting layer is sandwiched between a pair of electrodes.
- an organic electroluminescent element (hereinafter, appropriately referred to as an organic EL element) as an electroluminescent element have been proposed.
- the organic EL element has a structure in which an organic layer having an organic light emitting region containing an organic light emitting material is sandwiched between a pair of electrodes.
- At least one electrode can inject charges (holes or electrons) into the organic layer and extract light to the outside of the element. Therefore, it must be transparent to the light emitted in the organic light emitting region.
- a material must be selected that transports the charge injected from the electrode, recombines it, generates an excited state, and generates light when returning from the excited state to the ground state. Nare,
- the material for forming the organic EL element is extremely limited, and in most cases, a material having a high volume resistivity has to be used for the transparent electrode and the organic layer.
- an electrode on the side from which light is extracted to the outside of the element is made of a material having a high volume resistivity, such as ITO, and the other electrode has a larger volume resistivity than the electrode on the light extraction side. Is composed of negligible materials. Therefore, when considering the resistance value of the myriad current paths in the organic EL element, the length of the path passing over the light extraction side electrode must be considered.
- the electrode on the side opposite to the light extraction side may be formed of a material having a higher volume resistivity than the electrode on the light extraction side. In this case, the electrode on the light extraction side is replaced with the other electrode in the above description.
- a conventional technique for example, see Patent Document 3 for setting the in-plane film thickness variation of each layer constituting the organic layer to a predetermined value, or a film thickness of a light emitting layer (organic light emitting region) in the organic layer,
- Patent Document 4 A conventional technique of adjusting each position of a light-emitting layer so as to make the luminance uniform is also proposed (for example, see Patent Document 4).
- this conventional technique can be appropriately adopted, it is practically extremely difficult to change the thickness of each layer depending on the position in the manufacture of the organic EL device. To achieve this, a special manufacturing method must be adopted, or a manufacturing apparatus for realizing this manufacturing method must be manufactured.
- an inorganic electroluminescent element (hereinafter, appropriately referred to as an inorganic EL element) which is an electroluminescent element.
- Patent Document 1 JP-A-5-315073 (Claim 1, 0002 paragraph)
- Patent Document 3 JP-A-11-339960 (Claim 1)
- Patent Document 4 Japanese Patent Laid-Open No. 11-40362 (Claim 2, FIG. 1)
- Patent Document 5 Japanese Patent Application Laid-Open No. 2000-173771 (0040-0046 paragraph, 0060-0065 paragraph, FIGS. 5 and 7)
- Non-Patent Document 1 Supervised by Seizou Miyata, "Organic EL Devices and Their Forefront of Industrialization", NTT Co., Ltd., issued November 30, 1998, p. 46-47, FIG. 9
- An object of the present invention is to provide an electroluminescent device having a novel configuration for bringing the luminance distribution of the device into a desired state.
- the “desired state” includes a state in which the luminance of the entire element is substantially uniform, a state in which the central portion has a higher luminance than both sides or a peripheral portion, and a case in which the luminance of an arbitrary display portion such as an image is higher. And so on.
- the present invention is an electroluminescent element capable of emitting light by applying at least a voltage to a pair of electrodes, wherein the electroluminescent element has a light emitting portion and a non-light emitting portion. , The light emitting portion and the non-light emitting portion have a distribution for bringing the luminance distribution of the element into a desired state.
- an electroluminescent element provided to
- one of the pair of electrodes formed of a material having a high volume resistivity is formed in a planar shape, and the non-light emitting portion is formed of the material having a high volume resistivity.
- the electrode is provided so that the area occupied per unit area increases as the position is physically closer to the terminal of the other electrode.
- one of the pair of electrodes formed of a material having a high volume resistivity is formed in a planar shape, and the light emitting portion is formed of the material having a high volume resistivity.
- the electrode is provided such that the area occupied per unit area increases as the position is physically farther from the terminal of the other electrode.
- the light emitting portion and the non-light emitting portion are provided so that the central portion of the element becomes brighter than other portions as the luminance distribution of the element.
- the electroluminescent device is preferably an organic electroluminescent device in which an organic layer capable of emitting light by applying at least a voltage is interposed between a pair of electrodes.
- the non-light-emitting portion is preferably formed by providing a portion formed of a material having a higher work function than the material of the cathode, between the cathode of the pair of electrodes and the organic layer. .
- the non-light-emitting portion is preferably formed by providing a portion formed of a material having a smaller work function than the material of the anode between the anode of the pair of electrodes and the organic layer. .
- the non-light emitting portion is configured by changing the organic layer so that the organic layer cannot emit light.
- the light emitting section is preferably formed by providing an electron injection layer between the cathode of the pair of electrodes and the organic layer. [0027] It is preferable that the light emitting unit is configured by modifying a predetermined portion of the anode of the pair of electrodes so that the work function is larger than other portions of the anode. It is preferable that the electroluminescent element is provided with an organic layer only in a portion to be the light emitting portion.
- the electroluminescent device may be an inorganic electroluminescent device.
- the non-light-emitting portion is provided between at least one of the pair of electrodes and the organic layer.
- the insulating portion is provided.
- FIG. 1 is a schematic perspective view of an organic EL device provided with the organic EL element of the present invention.
- FIG. 2 is a schematic front view for explaining an organic layer provided in the organic EL device of FIG. 1.
- FIG. 3 (a)-(c) are schematic cross-sectional views for explaining a first configuration example of a light emitting section and a non-light emitting section of the organic EL element of FIG. 1.
- FIG. 4 (a)-(c) is a schematic cross-sectional view for explaining a second configuration example of the light emitting portion and the non-light emitting portion of the organic EL element.
- FIG. 5 is a schematic front view illustrating an organic layer provided in an organic EL device according to another embodiment of the present invention.
- FIG. 7 is a schematic cross-sectional view of an organic EL device including an organic EL element according to another embodiment.
- FIG. 8] (a)-(c) is a schematic view showing a step of forming an organic EL device in the same manner.
- FIG. 9 is a schematic cross-sectional view of an organic EL device including an organic EL element according to another embodiment.
- FIG. 10 is a schematic cross-sectional view of an organic EL device including an organic EL element according to another embodiment.
- FIG. 11 is a schematic cross-sectional view of an organic EL device including an organic EL element according to another embodiment.
- FIG. 12 is a schematic cross-sectional view of an organic EL device including an organic EL element according to another embodiment.
- FIG. 13 is a schematic front view showing the arrangement of non-light emitting portions in another embodiment.
- FIGS. 1 to 4 show an embodiment in which the electroluminescent device of the present invention is embodied as an organic EL device in which the brightness of the entire device is substantially uniform as a desired state of the brightness distribution of the device. It will be described with reference to FIG. In FIGS. 1 to 4, the same, equivalent or similar components are denoted by the same reference numerals.
- FIGS. 1 to 4 schematically show the structure of the organic EL device in order to explain the structure and the like which are different from those of the actual organic EL device. Exaggerated. Also, there are portions in the cross-sectional views where hatching is omitted.
- FIG. 1 is a schematic perspective view of a bottom emission type organic EL device in which the organic EL element 1 according to the present embodiment is laminated on a transparent substrate 9 and light is output to the transparent substrate 9.
- a transparent electrode 10, an organic layer 20, and a back electrode 30 are formed in this order from the transparent substrate 9 side. Note that, in FIG. 1, the back electrode 30 is drawn by a broken line to make the configuration of the organic layer 20 easy to understand.
- the light emitting unit 21 and the non-light emitting unit 22 will be described.
- the organic layer 20 is a layer that contains an organic light emitting material and emits light when a voltage is applied between the transparent electrode 10 and the back electrode 30 so that a current flows. More specifically, it includes a portion that emits light when a voltage is applied (light emitting portion 21) and a portion that does not emit light (non-light emitting portion 22).
- the transparent electrode 10 is made of a material having a higher volume resistivity than the back electrode 30, and a portion indicated by reference numeral 11 in FIG. 1 is an external drive circuit. Are connected to an external connection terminal (not shown). Further, it is assumed that the volume resistivity of the material forming the back electrode 30 is negligibly smaller than the volume resistivity of the material forming the transparent electrode 10 as compared with the transparent electrode 10. Negligibly small is, for example, 1/10 or less.
- the area occupied by the non-light emitting portion 22 per unit area in the organic layer 20 is designed to decrease as the distance from the terminal portion 11 increases as shown in FIG. ing.
- the area occupied by the light emitting section 21 per unit area is designed to increase as the distance from the terminal section 11 increases.
- the resistance of the current path from the terminal portion 11 of the transparent electrode 10 to the back electrode 30 through the transparent electrode 10 and the organic layer 20 is determined by the length of the transparent electrode 10 occupying this path.
- the organic EL element 1 is designed such that the area of the non-light emitting section 22 per unit area increases as the position is closer to the terminal section 11. That is, the area of the light emitting unit 21 per unit area is designed to increase as the distance from the terminal unit 11 increases.
- the amount of current flowing per unit area in the organic layer 20 that is sufficiently larger than one area of the non-light-emitting section 22 regardless of the distance from the terminal section 11 is roughly calculated.
- this effect can be obtained by increasing the area of the non-light emitting portion 22 per unit area closer to or closer to the terminal portion 11 made of a material having a high volume resistivity.
- the above operation can be obtained by increasing the area of the light emitting unit 21 per unit area at a position farther from the terminal unit 11.
- the optimum distribution of the non-light emitting portion 22 in the organic layer 20 changes depending on the performance of the organic EL element 1, that is, the material and thickness of each layer constituting the organic EL element 1, the manufacturing method, and the like.
- the design may be appropriately made in accordance with these conditions, it is preferable that the design is made so that the luminance is substantially uniform as a whole. That is, when a general driving voltage (for example, about 5 V) is applied between the transparent electrode 10 and the back electrode 30, the non-light emitting portions 22 are so arranged that the light emission amount of the organic layer per unit area becomes uniform. May be set.
- a general driving voltage for example, about 5 V
- the luminance is approximately "Uniform" means that when the organic EL element 1 is viewed from the light emitting surface side, in this embodiment, from the transparent substrate 9 side, the light emitting area is divided into a plurality of parts, and the minimum value of the luminance of each area is divided by the maximum value. Multiplied by 100 multiplied by 100 means 70% or more. The area of each of the regions is set to be sufficiently larger than the area of one of the non-light emitting portions 22, and is, for example, several square millimeters.
- the size of the non-light-emitting portion 22 in the plane direction of the organic layer 20 is preferably such that the non-light-emitting portion 22 cannot be recognized by the naked eye when the organic EL element 1 is also viewed with an external force. More generally, it is preferable that the distance between the two most distant points in the non-light-emitting portion 22 be about 300 zm or less. Further, when a member having a diffusion function such as a diffusion plate is provided on the light extraction side of the organic layer 20, for example, the distance is preferably about 500 ⁇ ⁇ or less.
- the non-light-emitting portion 22 is a portion that does not emit light even when a voltage is applied between the transparent electrode 10 and the back electrode 30 in the organic EL element 1, and specifically has, for example, the following configuration. Thus, a region that does not emit light can be provided.
- an insulating portion 40 is provided so as to be in contact with the back electrode 30 side of the organic layer 20 to form the non-light emitting portion 22, or as shown in FIG.
- An insulating portion 40 may be provided so as to be in contact with the transparent electrode 10 side of the layer 20, and the non-light emitting portion 22 may be formed.
- insulating portions 40 may be provided on both sides of the organic layer 20.
- the insulating portion 40 is formed by a known thin film forming method such as a vapor deposition method or a CVD method such that an insulating material that can be used for a known organic EL element is brought into contact with the entire surface of the organic layer 20 in the non-light emitting portion 22. What is necessary is just to provide.
- the organic layer 20 has a laminated structure, a small number of layers constituting the organic layer 20 may be used. At least one insulating portion 40 may be provided.
- a material for forming the insulating portion 40 a material having a volume resistivity of about 10 times or more of the volume resistivity of the material of the transparent electrode 10 can be used. Examples thereof include polymers, oxides, and glass.
- preferable transparent polymers include polyimide, fluorinated polyimide, fluororesin, polyacrylate, polyquinoline, polyoxadiazole, polyolefin having a cyclic structure, polyarylate, polycarbonate, polysulfone, and ladder. And polysiloxane.
- Preferred oxides include Si ⁇ , Al ⁇ , TaO, SiN, fluorine-added Si ⁇ , M
- the shape of the insulating portion 40 can be changed to an arbitrary (preferable) shape.
- a photoresist having photosensitivity and a cured product thereof can also be suitably used. This is because the shape of the insulating portion 40 can be processed into an arbitrary shape by the photoresist method as described above.
- an organic layer 20 and is easily deteriorated by water, oxygen and the like, the water content in the insulating portion 40 is 0, 1 wt% or less, and the gas permeability coefficient Monument 13 7126) 1 10 13 ' 0111 / ((:. 111 2 '3' cmHg) it is preferable to use the following materials as such materials, for example, inorganic oxides, inorganic nitrides or both compositions.
- the insulating section 40 has a function of transmitting light having a wavelength emitted from the organic layer 20 (a transmission function).
- scattering function The function of scattering light (scattering function), the function of reflecting light (reflection function), and the like.
- the insulating section 40 is provided on the opposite side of the organic layer 20 from the light extraction side.
- the back electrode 30 has a reflection function
- light of a wavelength emitted from the organic layer 20 is provided. It is desirable to have a function to reflect light (reflection function). Accordingly, the traveling direction of the light emitted from the organic layer 20 and emitted to the side opposite to the light extraction side can be converted to the light extraction side.
- the non-light emitting portion 22 does not emit light, but emits light to some extent, so that the possibility of being judged as a so-called black spot (dark spot) (confirmed with the naked eye) is low. It can be very low.
- the insulating portion 40 When the back electrode 30 has a function of absorbing light emitted from the organic layer 20 (absorption function) for the purpose of improving contrast or the like, the insulating portion 40 also has an absorption function. Good.
- the insulating section 40 may be formed by selecting a material that absorbs the light when forming the insulating section 40 from the above-mentioned materials. Alternatively, only the periphery of the insulating portion 40 may be formed of such a material.
- the insulating section 40 may have a transmission function. This allows light emitted from the organic layer 20 to the side opposite to the light extraction side to reach the back electrode 30. That is, when the back electrode 30 has a function such as a reflection function, for example, the non-light-emitting portion 22 can exhibit the same function as the light-emitting portion 21.
- the insulating portion 40 may have a known function other than the above.
- the insulating portion 40 is formed by using a material having the above-described light transmitting property when the insulating portion 40 is used. do it.
- the scattering function can be realized by a known method such as dispersing beads or the like formed of materials having different refractive indexes in the insulating portion 40.
- the reflection function can be formed by selecting a material having the reflection function from the above-described materials and forming the insulating portion 40. Further, a reflecting member may be provided separately from the insulating section 40 and adjacent to the insulating section 40.
- the scattering function and the reflection function may be provided only on a part of the insulating unit 40, for example, provided only on the surface of the insulating unit 40.
- At least one of the transparent electrode 10, the organic layer 20, and the back electrode 30 is not provided.
- the organic layer 20 in the non-light-emitting portion 22 is not provided, and as shown in FIG. 4 (b), the back electrode 30 in the non-light-emitting portion 22 is not provided.
- the non-light-emitting portion 22 can be formed even without providing the transparent electrode 10 in the non-light-emitting portion 22.
- the non-light-emitting portion 22 can be configured without providing a plurality of these layers or all the layers.
- the organic layer 20 in the portion corresponding to the non-light emitting portion 22 Therefore, no light is emitted from the non-light-emitting portion 22.
- the amount of material necessary for forming the organic EL element 1 can be reduced because of the layer not provided in the non-light emitting portion 22.
- the following manufacturing method may be adopted.
- the transparent electrode 10 or the like is provided only in the light emitting section 21.
- the transparent electrode 10 and the like are provided by using a method such as a printing method capable of forming a thin film in a fine region. • Once the transparent electrode 10 and the like are provided, the portion of the transparent electrode 10 and the like corresponding to the non-light emitting portion 22 is removed by a known fine processing method (removal method) such as mechanical abrasion, dry etching, or wet etching.
- a known fine processing method such as mechanical abrasion, dry etching, or wet etching.
- a protective member for protecting the organic EL element 1 may be provided in a portion of the non-light emitting portion 22 where the transparent electrode 10 and the like are not provided. This is to prevent the presence of a substance such as air that degrades the organic EL element 1 in this region or to maintain the smoothness of each layer constituting the organic EL element 1.
- the organic layer 20 and the back electrode 30 are provided on a region where the transparent electrode 10 is not provided, there is a possibility that a step is formed in each of the organic layer 20 and the back electrode 30.
- the transparent electrode 10 and the back electrode 30 may be short-circuited.
- the thickness of the organic layer 20 in the non-light-emitting portion 22 is made larger than that in the light-emitting portion 21.
- the organic layer 20 has a high volume resistivity. The resistivity of the current path passing through the part 22 is increased, so that the current is less likely to flow than in the light emitting part 21 and the light emission is substantially stopped.
- the organic layer 20 is modified so as not to emit light even when a voltage is applied.
- the organic layer 20 located in the non-light-emitting portion 22 is irradiated with ultraviolet rays or laser to modify the organic layer 20. This prevents light emission even when a voltage is applied.
- the region processed in this way may be used as the non-light emitting portion 22.
- the organic layer 20 is provided between the transparent electrode 10 and the back electrode 30 and contains an organic light emitting material that emits light when a voltage is applied to both electrodes. It can be manufactured by a known manufacturing method using a known layer configuration and a known material.
- the organic layer 20 has a laminated structure as long as it can realize at least the following functions, and the following functions can be realized by a single layer in which each layer has the function of shifting or shifting.
- Electron injection function
- the function of transporting at least one of electrons and holes Carrier transportability.
- the function of transporting electrons is called an electron transport function (electron transport property), and the function of transporting holes is called a hole transport function (hole transport property).
- exciton is generated by the recombination of injected and transported electrons and holes (it becomes excited state), and light is emitted when returning to the ground state.
- the organic layer 20 may be formed by providing, for example, a hole injection / transport layer, a light emitting layer, and an electron injection / transport layer in this order from the transparent electrode 10 side.
- the hole injection / transport layer is a layer that transports holes from the anode to the light emitting layer.
- the material for forming the hole injection transport layer include metal phthalocyanines such as copper phthalocyanine and tetra (t-butyl) copper phthalocyanine, and metal-free phthalocyanines, quinacridone compounds, 1,1-bis (4-diphenyl — P-Tolylaminophenyl) cyclohexane, ⁇ , ⁇ ′-diphenyl—N, N, —bis (3-methylphenyl) —1, 1′—biphenyl 4,4, —diamine, N, N'-di (1-naphthinole)-N, 1 ⁇ '_ diphenyl_1, 1'-biphenyl 4, 4'-Low molecular materials such as aromatic amines such as diamine, polythiophene and polyaniline Polymer materials such as polythiophene You can choose from ses
- the light emitting layer is a layer that recombines holes transported from the anode side and electrons transported from the cathode side to be in an excited state, and emits light when returning from the excited state to the ground state.
- a fluorescent material or a phosphorescent material can be employed as a material for the light emitting layer.
- dopant fluorescent material or phosphorescent material
- Examples of the material for forming the light emitting layer include 9,10-diarynoreanthracene derivatives, pyrene derivatives, coronene derivatives, perylene derivatives, rubrene derivatives, 1,1,4,4-tetraphenylbutadiene, and tris.
- (8-quinolinolato) aluminum complex tris (4-methyl-18-quinolinolato) aluminum complex, bis (8-quinolinolato) zinc complex, tris (4-methyl-5-trifluoromethyl-18-quinolinola) G) aluminum complex, tris (4-methyl-15-cyano-18-quinolinolato) aluminum complex, bis (2-methyl-15-trifluoromethyl-18-quinolinolato) [4- (4— Cyanophenyl) phenol-aluminum complex, bis (2-methyl-15-cyan-18-quinolinolato) [4- (4-cyanophenyl) phenola] aluminum complex , Tris (8-quinolinolato) scandium complex, bis [8- (para-tosyl) aminoquinoline] zinc complex and force dome complex, 1,2,3,4-tetraphenylcyclopentadiene, pentaphenylcyclopentadiene , Poly-1,5-diheptyloxy-para-phenylenevinylene
- the electron injection transport layer is a layer that transports electrons from the cathode (the back electrode 30 in this example) to the light emitting layer.
- Examples of the material for forming the electron injecting / transporting layer include 2- (4-biphenylyl) -15_ (4_t_butylphenyl) -1,3,4_oxadiazol, 2,5_bis (1 —Naphthyl) _1,3,4_oxadiazole and oxadizole derivatives, bis (10-hydroxybenzo [h] quinolinolato) beryllium complex, triazo-loui conjugate, and the like.
- the organic layer 20 includes a buffer layer, a hole blocking layer, an electron injection layer, a hole injection layer, and the like.
- a layer that can be adopted as a known organic electroluminescent layer can also be provided by a known method using a known material.
- the electron injecting / transporting layer may be separated and stacked into an electron injecting layer having an electron injecting function and an electron transporting layer having an electron transporting function.
- the material constituting each of these layers may be selected from known materials as appropriate according to the function of each layer, and may be selected from the above-described materials for forming the electron injection transport layer.
- the anode is an electrode for injecting holes into the organic layer 20.
- a known material such as a metal, an alloy, an electrically conductive compound, and a mixture thereof may be selected as long as the material imparts the above-described properties to the electrode.
- Examples of the material for forming the anode include the following.
- Metal oxides and metal nitrides such as ITO (indium-tin-oxide), IZO (indium-oxide), tin oxide, zinc oxide, zinc aluminum oxide, titanium nitride; gold, platinum, silver, copper, anolemminium, Metals such as nickel, cobalt, lead, chromium, molybdenum, tandustene, tantanole, and niobium;
- Conducting polymers such as polyaniline, polythiophene, polypyrro-nore, polyphenylenevinylene, poly (3-methylthiophene), and polyphenylene sulfide
- the transparent electrode 10 When the transparent electrode 10 is used as an anode, it is generally set so that the transmittance for the extracted light is greater than 10%. When extracting light in the visible light region, ITO having high transmittance in the visible light region is preferably used.
- the back electrode 30 When the back electrode 30 is used as an anode, it is preferably configured as a reflective electrode. In this case, a material having a function of reflecting light extracted to the outside is appropriately selected from the above materials, and generally, a metal, an alloy, or a metal compound is selected.
- the back electrode 30 may have a light absorbing function.
- a material that exhibits an absorption function when the electrode is formed may be appropriately selected from the above-described materials.
- the anode may be formed of only one kind of the materials described above, or may be formed by mixing plural kinds. Further, it may have a multilayer structure composed of a plurality of layers having the same composition or different compositions.
- the thickness of the anode depends on the material used. Generally, it is about 5 nm-1 ⁇ m, preferably about 10 nm-1 / im, more preferably about 10 nm-500 nm, and particularly preferably about 10 nm-3 OO nm. , Preferably lOnm—selected in the range of 200 nm.
- the anode is formed from the above-mentioned materials by a known thin film forming method such as a sputtering method, an ion plating method, a vacuum evaporation method, a spin coating method, and an electron beam evaporation method.
- a known thin film forming method such as a sputtering method, an ion plating method, a vacuum evaporation method, a spin coating method, and an electron beam evaporation method.
- the sheet electric resistance of the anode is preferably set to several hundreds ⁇ / port or less, more preferably about 5-50 ⁇ / port.
- the surface of the anode may be subjected to UV ozone cleaning or plasma cleaning.
- the cathode is an electrode that injects electrons into the organic layer 20 (the electron injection transport layer in the above-described layer configuration).
- Examples of the above electrode materials include lithium, sodium, magnesium, gold, and silver. , Copper, aluminum, indium, calcium, tin, ruthenium, titanium, manganese, chromium, yttrium, aluminum-calcium alloy, aluminum-lithium alloy, aluminum-magnesium alloy, magnesium-silver alloy, magnesium-indium alloy, lithium Examples include an indium alloy, a sodium-potassium alloy, a magnesium / copper mixture, and an aluminum Z-aluminum oxide mixture. In addition, materials that can be used as materials for the anode can also be used.
- a material having a function of reflecting light to be extracted to the outside is preferably selected from the above materials, and generally, a metal, an alloy, or a metal compound is used. Selected.
- the transmittance for the light to be extracted is generally set to be greater than 10%.
- a transparent conductive oxide is applied to an ultra-thin magnesium-silver alloy.
- An electrode formed by stacking objects is used.
- a buffer layer containing copper phthalocyanine or the like is provided between the cathode and the organic layer 20 in order to prevent the light emitting layer and the like from being damaged by plasma when the conductive oxide is sputtered. Good.
- the cathode may be formed of the above-described materials alone, or may be formed of a plurality of materials. For example, if 5% to 10% of silver or copper is added to magnesium, oxidation of the cathode can be prevented, and adhesion between the cathode and the organic layer 20 can be increased.
- the cathode may have a multilayer structure including a plurality of layers having the same composition or different compositions.
- the following structure may be adopted.
- a protective layer made of a corrosion-resistant metal is provided on a portion of the cathode not in contact with the organic layer 20.
- the protective layer for example, silver or aluminum is preferably used.
- an oxide, a fluoride, a metal compound, or the like having a small work function is introduced into the interface between the cathode and the organic layer 20.
- the cathode can be formed by a known thin film formation method such as a vacuum evaporation method, a sputtering method, an ionization evaporation method, an ion plating method, and an electron beam evaporation method.
- the sheet electric resistance of the cathode is preferably set to several hundreds ⁇ or less.
- an insulating layer may be provided on the outer periphery of the organic layer 20. By providing the insulating layer in this manner, it is possible to prevent the transparent electrode 10 and the back electrode 30 in the electrically adjacent light emitting region from coming into contact with the organic layer 20.
- a material for forming an insulating portion used in a known organic EL element can be appropriately used.
- the above-described material for forming the insulating portion 40 is used. You can also.
- a well-known forming method can be adopted for the forming method.
- the auxiliary electrode is provided so as to be electrically connected to the anode and / or the cathode, and is made of a material having a lower volume resistivity than the electrode to be connected. If the auxiliary electrode is formed of such a material, the volume resistivity of the entire electrode on which the auxiliary electrode is provided can be reduced, and the maximum difference in the magnitude of the current flowing at each point of the organic layer 20 can be reduced. , Can be made smaller than when no auxiliary electrode is provided.
- Cu silver (Ag), molybdenum (Mo), tantalum (Ta), gold (Au), chromium (Cr), titanium (Ti), neodymium (Nd), and alloys thereof.
- alloys include alloys such as Mo_W, Ta_W, Ta_Mo, Al_Ta, Al-Ti, Al-Nd, and Al-Zr.
- TiSi, ZrSi, HfSi, VSi, NbSi, TaSi which are conjugates of metal and silicon,
- a configuration in which silicon compounds are respectively laminated may be employed.
- the auxiliary electrode may be a single-layer film made of the above-described material, but it is also preferable to use two or more types of multilayer films in order to enhance the stability of the film.
- a multilayer film And the above metals or alloys thereof.
- the Ta layer, the Cu layer, and the Ta layer, and the Ta layer, the A1 layer, and the Ta layer and in the case of two layers, the A1 layer, the Ta layer, the Cr layer, the Au layer, the Cr layer, the A1 layer, and the like.
- a combination of the A1 layer and the Mo layer can be given.
- the stability of the film refers to a property that a low volume resistivity can be maintained and that the film is hardly corroded by a liquid used for the treatment during etching.
- the auxiliary electrode is made of Cu or Ag
- the volume resistivity of the auxiliary electrode itself is low, but it may be easily corroded.
- the stability of the auxiliary electrode is increased by laminating a film of a metal with excellent corrosion resistance, for example, Ta, Cr, Mo, etc. on the upper and / or lower part of the metal film made of Cu or Ag. be able to.
- the film thickness of the auxiliary electrode is generally preferably in the range of lOOnm-several 10 / im, particularly preferably in the range of 200nm-5 ⁇ m.
- the reason for this is that when the strong film thickness is less than 100 nm, the resistance value increases, which is not preferable as an auxiliary electrode. This is because a defect of the element 1 may occur.
- the width of the auxiliary electrode is preferably, for example, a value in the range of 2 ⁇ m to 1,000 ⁇ m, and more preferably a value in the range of 5 ⁇ m to 300 ⁇ m.
- the reason for this is that if the applied width is less than 2 / m, the resistance of the auxiliary electrode may increase, while if the applied width exceeds 1000 zm, it will impede light extraction to the outside. This is because there are cases.
- the organic EL element 1 may be protected by a passivation film or a sealing can.
- the passivation film is a protective layer (sealing layer) provided on the side opposite to the transparent substrate 9 to prevent the organic EL element 1 from coming into contact with oxygen or moisture.
- the material used for the paste film include an organic polymer material, an inorganic material, and a photocurable resin.
- the material used for the protective layer may be used alone. You may use a combination of two or more.
- the protective layer may have a single-layer structure or a multilayer structure. The thickness of the noisy film is sufficient if it can block moisture and gas from the outside.
- Examples of the organic polymer material include chlorofluoroethylene polymer, dichlorodifluoroethylene polymer, and copolymer of chlorotrifluoroethylene polymer and dichlorodifluoroethylene polymer.
- Acrylic resins such as fluorine resin, polymethyl methacrylate, polyacrylate, epoxy resin, silicone resin, epoxy silicone resin, polystyrene resin, polyester resin, polycarbonate resin, polyamide resin, polyimide resin, polyamide imide resin, Examples include polyparaxylene resin, polyethylene resin, and polyphenylene oxide resin.
- Examples of the inorganic material include polysilazane, diamond thin film, amorphous silica, electrically insulating glass, metal oxide, metal nitride, metal carbide, and metal sulfide.
- the sealing can is a member configured by a sealing member, such as a sealing plate or a sealing container, for blocking external moisture and oxygen.
- the sealing can may be provided only on the back electrode side (the side opposite to the transparent substrate 9) or may cover the entire organic EL element 1.
- the shape, size, thickness, etc. of the sealing member are not particularly limited as long as the sealing member can seal the organic EL element 1 and block external air.
- the material used for the sealing member include glass, stainless steel, metal (eg, aluminum), plastic (eg, trifluoroethylene, polyester, polyester-polycarbonate, etc.), and ceramics.
- a sealing agent adhesive
- the sealing members may be thermally fused together without using a sealing agent.
- an ultraviolet curable resin, a thermosetting resin, a two-part curable resin, or the like can be used as the sealant.
- a moisture absorbent may be introduced into the space between the organic EL device 1 and the passivation film or the sealing can.
- the water absorbent is not particularly limited, and specific examples include barium oxide, sodium oxide, potassium oxide, calcium oxide, sodium sulfate, calcium sulfate, magnesium sulfate, phosphorus pentoxide, calcium chloride, magnesium chloride, copper chloride, and fluoride. Cesium, niobium fluoride, calcium bromide, vanadium bromide, molecular sieve, zeolite, magnesium oxide, and the like.
- an inert gas may be sealed in a noisy film or a sealing can.
- the inert gas refers to a gas that does not react with the organic EL element 1.
- a rare gas such as helium or argon or a nitrogen gas can be used.
- the substrate is a mainly plate-shaped member that supports the organic EL element 1.
- the organic EL device 1 is generally manufactured as an organic EL device supported by a substrate because each of the constituent layers is very thin.
- the substrate When the substrate is on the light extraction side of the organic layer 20, the substrate is transparent to the extracted light. Since the organic EL element 1 of this embodiment is a bottom emission type element, the substrate is transparent, and the plane of the transparent substrate 9 opposite to the plane in contact with the organic EL element 1 is a light extraction surface. It is 90.
- a known substrate can be used as long as it has the functions described above.
- a ceramic substrate such as a glass substrate, a silicon substrate, or a quartz substrate, or a plastic substrate is selected.
- a metal substrate or a substrate having a metal foil formed on a support may be used.
- a substrate composed of a composite sheet in which a plurality of the same or different substrates are combined is used.
- the device may be configured as a top emission type device or a device for extracting light from both sides.
- the transparent electrode 10 in order to manufacture the bottom emission type organic EL device 1, on the transparent substrate 9, The transparent electrode 10, the organic layer 20, and the back electrode 30 may be formed using the respective film forming methods described above. In order to manufacture a top emission type organic EL element, a back electrode 30, an organic layer 20, and a transparent electrode 10 may be sequentially formed on a substrate.
- the transparent electrode 10 and the back electrode 30 in the organic EL element 1 are connected to an external drive circuit at respective terminal portions 11, 31. Then, when a voltage is applied to the organic EL element by the external drive circuit, a voltage is applied to the organic layer. At this time, the light emitting section 21 emits light, and the non-light emitting section 22 does not emit light.
- FIG. 5 is a schematic front view showing the relationship between the organic layer 20 and the non-light emitting portion 22, and FIG. 6 is a schematic sectional view of the organic EL device. In FIG. 6, hatching indicating the cross section is omitted.
- a transparent electrode 10, an organic layer 20, and a back electrode 30 are sequentially formed on a transparent substrate 9.
- a plurality of insulating portions 40 are provided on the surface of the organic layer 20 on the side of the back electrode 30, and portions corresponding to the insulating portions 40 of the organic layer 20 constitute the non-light emitting portions 22. That is, the organic layer 20 has the same number of non-light emitting portions 22 as the number of insulating portions 40.
- the organic EL element 1 is protected by a passivation film (not shown) except for the surface facing the transparent substrate 9.
- the terminal portion 11 of the transparent electrode 10 is formed at one corner of the transparent electrode 10 in the same manner as in the above embodiment. It is provided in. Therefore, when a voltage is applied between the transparent electrode 10 and the back electrode 30 in a state where the non-light emitting portion 22 is not provided in the organic layer 20, the brightness becomes higher in a region physically closer to the terminal portion 11.
- the brightness is higher in a region closer to the terminal portion 11. Therefore, in order for the predetermined region 51 in the central portion to have a higher brightness than the regions 52a and 52b on both sides, in the region 52a near the terminal portion 11, the ratio of the non-light emitting portion 22 is set to the central portion. More than the predetermined area 51. Even within the predetermined region 51 in the central portion, the non-light-emitting portion 22 is provided so that the distribution ratio of the non-light-emitting portion 22 is greater on the side closer to the terminal portion 11 than on the side farther away.
- the distribution ratio of the non-light-emitting portion 22 is larger on the side closer to the region 51 than in the adjacent region 51, as the distance from the force region 51 increases.
- the distribution ratio of the non-light-emitting portions 22 in a portion away from the region 51 may be smaller than the distribution ratio of the non-light-emitting portions 22 in the region 51.
- the configurations of the organic layer 20, the light-emitting portion 21, the non-light-emitting portion 22, the transparent electrode 10, the back electrode 30, and the like constituting the organic EL element 1 are the same as in the above-described embodiment.
- Various configurations are possible.
- the substrate, the insulating layer, the auxiliary electrode, the protective layer (passivation film, sealing can) and the like can have various configurations as in the case of the above embodiment.
- the non-light-emitting portion 22 is formed by providing the insulating portion 40, and the organic EL element in a state where the luminance of the predetermined region in the center portion of the organic EL device 1 is higher than the regions on both sides
- FIGS. the same reference numerals are given to the same or corresponding portions as those in the above embodiment, and the detailed description is omitted.
- an insulating section 40 is provided between the transparent electrode 10 (anode) and the organic layer 20, and the insulating section 40 between the transparent substrate 9 and the transparent electrode 10 is provided.
- the insulating section 40 since the insulating section 40 is provided between the organic layer 20 and the back electrode 30, the insulating section 40 needs to be formed after the organic layer 20 is formed.
- the insulating portion 40 needs to be formed so as to have a predetermined distribution, and it is necessary to form a pattern that is not formed on the organic layer 20 so as to be one plane. Since the organic layer 20 is vulnerable to moisture and high heat, the manufacturing conditions for preventing the organic layer 20 from being damaged by removing the unnecessary portion by etching or the like and forming the insulating portion 40 at the required portion are not considered. It becomes severe.
- the insulating section 40 is provided between the transparent electrode 10 and the organic layer 20, it is possible to form the organic layer 20 after forming the insulating section 40, The degree of freedom in forming the insulating portion 40 is increased.
- the insulating section 40 is formed of a positive type photoresist, and the insulating section 40 having a predetermined distribution (pattern) is formed. Then, the transparent substrate 9 on which the light reflection layer 23 is formed plays the role of a mask, even when a mask for exposing a part other than the part to be the insulating part 40 is not particularly provided when exposing the photoresist. .
- the light reflection layer 23 is formed at a predetermined position (a position corresponding to the position where the insulating section 40 is formed) on the transparent substrate 9.
- a transparent electrode 10 is formed thereon.
- the light reflection layer 23 is formed of, for example, silver.
- a photoresist layer 24 is formed on the transparent electrode 10, as shown in FIG. 8B, the photoresist layer 24 is exposed from the transparent substrate 9 side, and the light reflection layer 2 of the photoresist layer 24 is formed. Parts other than the part corresponding to 3 become soluble.
- the soluble portion is removed, and an insulating portion 40 is formed in a portion corresponding to the light reflecting layer 23, as shown in FIG.
- the organic layer 20, the back electrode 30, and the protective layer are formed to form an organic EL device.
- the organic layer 20 is shown to be thicker than the insulating part 40. Actually, the insulating part 40 is thicker.
- the predetermined area 51 at the center of the element has a higher luminance than the areas 52a and 52b on both sides. It emits light in a certain state.
- the insulating portion 40 that determines the luminance distribution is formed of a photoresist, and the transparent substrate 9 on which the light reflection layer 23 is formed plays the role of a mask used during the exposure. Are accurately formed at the positions as designed. Further, in order to make the luminance distribution as designed, it is easier to design if no light is emitted from a position corresponding to the insulating portion 40, that is, a portion corresponding to the non-light emitting portion 22.
- the light reflecting layer 23 is formed at a position corresponding to the insulating portion 40, the light is emitted from the transparent substrate 9 even if the insulating portion 40 partially transmits light. Blocked by layer 23, it is easier to obtain the designed brightness distribution.
- the directional light is reflected from the light extraction surface 90 side of the transparent substrate 9 into the organic EL element 1 by the light reflection layer 23. Therefore, for example, when the organic layer or the transparent electrode has a function of absorbing light, the light is reflected by the light reflection layer 23 without passing through the layer that absorbs light, so that the above-described embodiment is more effective. Light loss is reduced and power consumption can be reduced.
- the present invention is applied to an organic EL element in which a predetermined area at the center of the organic EL element has a higher luminance than areas on both sides as a desired state of the luminance distribution of the organic EL element.
- a predetermined area at the center of the organic EL element has a higher luminance than areas on both sides as a desired state of the luminance distribution of the organic EL element.
- the cathode which is an electrode located on the opposite side of the anode (transparent electrode 10) with the organic layer 20 interposed therebetween, has the electrode facing the organic layer 20 on the side facing the organic layer 20.
- This embodiment differs from the above embodiment in that it has a plurality of portions 25 formed of a material having a higher work function than that of the above material, and the other points are the same.
- the portion corresponding to the portion 25 of the organic layer 20 forms the non-light emitting portion 22. That is, the organic layer 20 has the same number of non-light emitting portions 22 as the number of the portions 25.
- Part 2 The area 5 is provided so that the area occupied per unit area becomes larger as the area where the luminance of the organic layer 20 is desired to be reduced from the state where the part 25 is not provided is larger.
- the back electrode 30 is formed of, for example, aluminum, and the portion 25 is formed of, for example, silver.
- the portion 25 has a higher reflectance than the rear electrode 30.
- the part 25 is provided instead of the insulating part 40 in the above embodiment.
- the transparent electrode 10 and the back electrode 30 when a voltage is applied between the transparent electrode 10 and the back electrode 30 so that electrons can be injected only into a material having a small work function (the material of the back electrode 30), the work is performed by the material of the back electrode 30.
- the portion 25 formed of a material having a large function cannot flow a current toward the transparent electrode 10 side, and functions similarly to the insulating portion.
- the predetermined region in the central portion is provided.
- the organic EL element 1 emits light in a state where the luminance is higher than that of the regions 52a and 52b on both sides.
- the size and the number of the portions 25 provided in the predetermined region 51 and the regions 52a and 52b are set according to the luminance values to be obtained in the predetermined region 51 and the regions 52a and 52b. Since the work function differs depending on the material, the material forming the portion 25 may require a different material if the material forming the back electrode 30 is changed. is there.
- the same effects as those of the above-described embodiment in which the insulating portion 40 is provided can be obtained.
- the following effects can be obtained.
- the organic EL element 1 when used as a backlight having a brightness enhancement film (BEF), the brightness enhancement film generates reflected return light. Since it is made of a material having a higher reflectance than the electrode 30, the reflected return light can be efficiently reflected again to the transparent electrode 10 side. As a result, power consumption can be reduced.
- BEF brightness enhancement film
- the non-light emitting portion 22 is formed of a material having a larger work function than the cathode between the organic layer 20 and the cathode (back electrode 30) as in the above-described embodiment.
- a portion formed of a material having a smaller work function than the anode may be provided between the anode (transparent electrode 10) and the organic layer 20.
- a material having a smaller work function than the material of the anode is formed between the portion of the organic layer 20 where the non-light emitting portion 22 is to be formed and the corresponding transparent electrode 10 and the organic layer 20.
- Multiple parts 27 are provided.
- the transparent electrode 10 is formed of ITO
- the work function of ITO is 4.5-4.8 eV, so that a metal having a smaller work function is used as the material of the portion 27.
- the metal for example, aluminum is used.
- the part 27 is provided instead of the insulating part 40.
- the insulating portion 40 is provided as in the above-described embodiment, even when a voltage is applied between the transparent electrode 10 and the back electrode 30, no current flows through the corresponding portion of the organic layer 20, and that portion does not emit light. It becomes 22.
- a portion 27 formed of a material having a work function smaller than that of the material of the anode (transparent electrode 10) is formed between the organic layer 20 and the anode (transparent electrode 10). Exists in between. Since the portion 27 is made of a conductive material instead of an insulating material, unlike the insulating portion 40, current flows easily. However, the organic layer 20 is essentially an insulating material, and a current flows in a region where holes are injected into the organic layer 20 on the anode side.
- the anode made of a material having a large work function can easily inject holes, and holes are injected at a lower voltage than a material having a small work function. Therefore, when a voltage is applied between the anode and the cathode while a material having a different work function is in contact with the organic layer 20 on the anode side, the applied voltage is such that a material having a small work function is capable of injecting holes. Reaching the voltage of If not, holes can be injected only into materials having a large work function. Then, in this state, no current flows through the organic layer 20 in a portion corresponding to the material having a small work function, and that portion becomes the non-light emitting portion 22.
- the portions 27 are provided so as to have the same distribution as the insulating portions 40 in the organic EL element 1 of the embodiment in which the insulating portions 40 are provided, the same as in the above-described embodiment.
- the organic EL element 1 is obtained in a state where the brightness of the predetermined region 51 in the center is higher than that of the regions 52a and 52b on both sides.
- the conductive material forming the portion 27 has a lower resistance than ITO, the provision of the portion 27 reduces the resistance in the plane direction of the transparent electrode 10 as a whole, When the same voltage is applied between the electrodes 30, the amount of current flowing increases, and the luminance of the entire organic EL element 1 can be increased.
- a transparent electrode 10 anode
- an organic layer 20 an organic layer 20
- a back electrode 30 cathode
- An electron injection layer 28 is provided at a plurality of locations on the surface of the back electrode 30 on the organic layer 20 side, and a portion corresponding to the electron injection layer 28 of the organic layer 20 constitutes the light emitting section 21. That is, the organic layer 20 has the same number of light emitting portions 21 as the number of the electron injection layers 28.
- the organic EL element 1 is protected by a passivation film (not shown) except for the surface facing the transparent substrate 9.
- the electron injection layer 28 is formed of a material having a smaller work function than the material of the back electrode 30.
- Examples of the combination of the material of the back electrode 30 and the electron injection layer 28 include silver for the material of the back electrode 30, lithium or cesium for the material of the electron injection layer 28, aluminum for the material of the back electrode 30, and electron injection.
- a combination of lithium fluoride for the material of layer 28 is preferred.
- the back electrode 30 (cathode) is formed of silver, and the electron injection layer 28 is formed of lithium or cesium. Therefore, when a voltage is applied between the anode and the cathode so that electrons can be injected only into the electron injection layer 28, a current flows from the electron injection layer 28 to the organic layer 20 to form the light emitting section 21. On the other hand, in a portion where the back electrode 30 is in contact with the organic layer 20, electron injection is not performed, and no current flows through the organic layer 20, so that portion becomes the non-light emitting portion 22.
- the organic EL element 1 Since the luminance of the light emitting section 21 increases as it approaches the terminal section 11, the organic EL element 1 as a whole In order to obtain substantially uniform brightness, the number and size of the electron injection layers 28 are set such that the area of the electron injection layer 28 per unit area increases as the distance from the terminal portion 11 increases.
- the organic EL device is used in a state where a voltage is applied between the anode and the cathode so that only the electron injection layer 28 can inject electrons.
- the portion corresponding to the electron injection layer 28 becomes the light emitting portion 21, and the light emitting portion 21 emits light with the above distribution, so that the organic EL element 1 emits light with substantially uniform luminance as a whole.
- the electron injection layer 28 is provided at a plurality of locations on the surface of the back electrode 30 on the organic layer 20 side, and a voltage large enough to allow only the electron injection layer 28 to inject electrons is applied between the anode and the cathode. Configuration.
- the electron injection layer 28 instead of providing the electron injection layer 28, as shown in FIG. 12, the electron injection layer 28 is provided in the above-described embodiment on the side of the transparent electrode 10 constituting the anode facing the organic layer 20.
- the work function of the part 29 corresponding to the part which is formed is increased.
- the transparent electrode 10 is formed of ITO, and the portion 29 is formed by ultraviolet irradiation or plasma processing. For example, after the transparent electrode 10 is formed on the transparent substrate 9, a predetermined portion of the transparent electrode 10 is irradiated with ultraviolet light or plasma using a mask to form the site 29.
- the part 29 is modified so that the work function is larger than that of the material of the transparent electrode 10. Accordingly, holes are injected into the organic layer 20 only between the anode and the cathode at a position where the organic layer 20 is in contact with the portion 29, and a positive hole is injected at a position where the ITO material of the transparent electrode 10 is in contact with the organic layer 20. When a voltage at which no hole injection is performed is applied, a current flows from the portion 29 to the organic layer 20 to form the light emitting portion 21. On the other hand, holes are not injected in a portion where the ITO is in contact with the organic layer 20, and no current flows through the organic layer 20.
- the luminance of the light emitting portion 21 corresponding to the portion 29 is higher than when the organic layer 20 emits light in a state where the transparent electrode 10 having the same area as the portion 29 is provided without providing the portion 29. Therefore, even with the same power consumption, the luminance of the light emitting unit 21 increases as the distance from the terminal unit 11 increases.
- the number and size of the portions 29 are set such that the farther from the terminal portion 11, the larger the area of the portion 29 per unit area becomes in order to obtain substantially uniform brightness as a whole of the element 1.
- the organic EL device is used in a state where a voltage is applied between the anode and the cathode so that holes can be injected only from the portion 29.
- the organic layer 20 in the portion corresponding to the portion 29 becomes the light emitting portion 21, and the organic EL element 1 emits light with substantially uniform luminance as a whole because of the distribution of the portion 29 as described above.
- the brightness of the light emitting section 21 is higher than that in the case where the voltage is applied between the anode and the cathode and the organic layer 20 emits light without providing the portion 29. Therefore, even with the same power consumption, the organic EL element 1 can increase the luminance at a desired position, and if the luminance is the same, the power consumption can be reduced.
- a portion 25 formed of a material having a work function larger than that of the material forming the cathode may be provided between the cathode and the organic layer 20.
- the area occupied per unit area increases as the position of the terminal portion where the electrode formed of the material having the higher volume resistivity is connected to the external connection terminal is also physically closer. It is provided in.
- a voltage large enough to inject electrons only from the region 25 is applied between the anode and the cathode.
- a portion 27 having a work function smaller than that of the material forming the anode may be provided between the anode and the organic layer 20.
- the area occupied per unit area becomes larger as the position of the terminal portion where the electrode formed of the material having the higher volume resistivity is connected to the external connection terminal is also physically closer. It is provided in.
- an organic EL element other than the organic EL element in which the luminance becomes substantially uniform as a whole element for example, the luminance of the central part of the element becomes higher.
- a configuration may be adopted in which the luminance of the light emitting section 21 is higher than the luminance when the non-light emitting section 22 is not provided. That is, an electron injection layer 28 is provided between the organic layer 20 and the cathode (back electrode 30) corresponding to the portion to be the light emitting portion 21 or the anode corresponding to the portion of the organic layer to be the light emitting portion 21.
- the predetermined part of the (transparent electrode 10) is altered so that the work function is larger than other parts. Also in these cases, the luminance at a desired position of the organic EL element 1 can be increased with the same power consumption, and the power consumption can be reduced with the same luminance.
- the terminal portion 11 is provided on one side along one side of the transparent electrode 10, and the shape of the non-light emitting portion 22 is formed. May be formed in a stripe shape parallel to the terminal portion 11. With this configuration, the formation is easier than in the case where the non-light emitting portion 22 is formed in a dot shape.
- the method of forming the non-light emitting portion 22 includes a configuration in which an insulating portion 40 is provided, a configuration in which a portion 25 having a work function larger than that of the cathode between the cathode and the organic layer 20, and a work function between the anode and the organic layer 20.
- An appropriate method of forming the non-light emitting portion 22 can be selected, such as a configuration in which a portion 27 smaller than the anode is provided.
- the shape of the light emitting unit 21 may be a stripe shape.
- the organic EL element described as an element that emits light over the entire surface and is suitable as an illumination device, a backlight, or the like employs an active matrix method or a passive matrix method. Naturally, it can be applied to each pixel or each sub-pixel in the organic EL display.
- the above organic EL device may be configured as a top emission type, which is a bottom emission type, or light may be extracted from both sides.
- the transparent electrode is an electrode composed of a material having a higher volume resistivity than the back electrode.
- the back electrode is composed of a material having a higher volume resistivity than the transparent electrode.
- the present invention is naturally applicable to an organic EL device.
- the position of the non-light-emitting portion / light-emitting portion may be defined with reference to the terminal portion of the back electrode.
- the organic layer 20 includes a hole injection layer, a hole transport layer, a light emitting layer, an electron injection layer, and an electron transport layer.
- a layered structure is appropriately selected so as to emit light at least from the layers.
- at least one of the hole injecting layer, the hole transporting layer, the light emitting layer, the electron injecting layer, and the electron transporting layer is not partially formed to be a non-light emitting portion.
- the present invention can be naturally applied to the case where the configuration using an organic EL element is used as the electroluminescent element, and the use of an inorganic EL element as the electroluminescent element.
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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US10/574,371 US7855506B2 (en) | 2003-10-02 | 2004-07-26 | Electric field light emitting element |
JP2005514359A JP4400570B2 (ja) | 2003-10-02 | 2004-07-26 | 電界発光素子 |
EP04770942A EP1684550A4 (en) | 2003-10-02 | 2004-07-26 | LIGHT EMISSION ELEMENT WITH ELECTRICAL FIELD |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2003344873 | 2003-10-02 | ||
JP2003-344873 | 2003-10-02 |
Publications (1)
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WO2005034586A1 true WO2005034586A1 (ja) | 2005-04-14 |
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ID=34419400
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2004/010631 WO2005034586A1 (ja) | 2003-10-02 | 2004-07-26 | 電界発光素子 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7855506B2 (ja) |
EP (1) | EP1684550A4 (ja) |
JP (1) | JP4400570B2 (ja) |
KR (1) | KR100818133B1 (ja) |
CN (1) | CN100484352C (ja) |
TW (1) | TWI300314B (ja) |
WO (1) | WO2005034586A1 (ja) |
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Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0482197A (ja) * | 1990-07-25 | 1992-03-16 | Hitachi Ltd | 薄膜el素子 |
JPH05226076A (ja) * | 1992-02-12 | 1993-09-03 | Mitsubishi Cable Ind Ltd | El発光体 |
JPH05307997A (ja) * | 1992-04-30 | 1993-11-19 | Pioneer Electron Corp | 有機エレクトロルミネッセンス素子 |
JPH09306669A (ja) * | 1996-05-15 | 1997-11-28 | Kemipuro Kasei Kk | 有機エレクトロルミネッセンス素子とその製造方法 |
JPH1050481A (ja) * | 1996-07-31 | 1998-02-20 | Pioneer Electron Corp | 有機エレクトロルミネセンス素子 |
JPH11260560A (ja) * | 1998-03-06 | 1999-09-24 | Denso Corp | El素子 |
JPH11273869A (ja) * | 1998-03-25 | 1999-10-08 | Matsushita Electric Ind Co Ltd | 有機発光素子及びその製造方法 |
JP2000082588A (ja) * | 1997-09-22 | 2000-03-21 | Fuji Electric Co Ltd | 有機発光素子およびその製造方法 |
JP2000231985A (ja) * | 1999-02-12 | 2000-08-22 | Denso Corp | 有機el素子 |
JP2000252063A (ja) * | 1999-03-01 | 2000-09-14 | Toppan Printing Co Ltd | 色切換発光素子、色切換発光素子用基板及びカラー表示装置 |
JP2002318556A (ja) * | 2001-04-20 | 2002-10-31 | Toshiba Corp | アクティブマトリクス型平面表示装置およびその製造方法 |
JP2004335319A (ja) * | 2003-05-09 | 2004-11-25 | Rohm Co Ltd | 有機el表示装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2830025B2 (ja) * | 1988-10-25 | 1998-12-02 | 岩崎電気株式会社 | 発光ダイオード |
JPH05315073A (ja) | 1991-04-19 | 1993-11-26 | Ricoh Co Ltd | El素子 |
JPH0520294A (ja) | 1991-07-17 | 1993-01-29 | Fujitsu Ltd | ニユーラルネツトワーク型情報処理装置 |
JP3586906B2 (ja) | 1994-12-14 | 2004-11-10 | 凸版印刷株式会社 | 透明導電膜の製造方法 |
JPH10178214A (ja) * | 1996-12-19 | 1998-06-30 | Sanyo Electric Co Ltd | 発光装置 |
JPH1140362A (ja) | 1997-07-15 | 1999-02-12 | Casio Comput Co Ltd | 電界発光素子及びその製造方法 |
JPH11339960A (ja) | 1998-05-28 | 1999-12-10 | Toray Ind Inc | 発光素子及びその製造方法 |
JP2000173771A (ja) | 1998-12-10 | 2000-06-23 | Sharp Corp | ライン光源及びその製造方法 |
US6328456B1 (en) * | 2000-03-24 | 2001-12-11 | Ledcorp | Illuminating apparatus and light emitting diode |
US6787989B2 (en) * | 2000-06-21 | 2004-09-07 | Nippon Sheet Glass Co., Ltd. | Substrate with transparent conductive film and organic electroluminescence device using the same |
JP2002083693A (ja) * | 2000-06-21 | 2002-03-22 | Nippon Sheet Glass Co Ltd | 透明導電膜付き基板及び該透明導電膜付き基板を使用した有機エレクトロルミネッセンス素子 |
JP2003163366A (ja) * | 2001-11-26 | 2003-06-06 | Sanyo Electric Co Ltd | 発光ダイオード |
JP3705264B2 (ja) * | 2001-12-18 | 2005-10-12 | セイコーエプソン株式会社 | 表示装置及び電子機器 |
JP4020673B2 (ja) * | 2002-03-20 | 2007-12-12 | 三洋電機株式会社 | 有機elパネルの減光化方法および有機elパネル |
JP4270891B2 (ja) * | 2003-01-21 | 2009-06-03 | 三洋電機株式会社 | El表示装置のレーザーリペア方法 |
TWI223569B (en) * | 2002-03-20 | 2004-11-01 | Sanyo Electric Co | Method for reducing light quantity of organic EL panel and organic EL panel |
JP4561490B2 (ja) * | 2004-12-24 | 2010-10-13 | 株式会社豊田自動織機 | エレクトロルミネッセンス素子 |
-
2004
- 2004-07-26 KR KR1020067006321A patent/KR100818133B1/ko not_active IP Right Cessation
- 2004-07-26 EP EP04770942A patent/EP1684550A4/en not_active Withdrawn
- 2004-07-26 US US10/574,371 patent/US7855506B2/en not_active Expired - Fee Related
- 2004-07-26 WO PCT/JP2004/010631 patent/WO2005034586A1/ja active Application Filing
- 2004-07-26 CN CNB2004800287561A patent/CN100484352C/zh not_active Expired - Fee Related
- 2004-07-26 JP JP2005514359A patent/JP4400570B2/ja not_active Expired - Fee Related
- 2004-07-27 TW TW093122342A patent/TWI300314B/zh not_active IP Right Cessation
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0482197A (ja) * | 1990-07-25 | 1992-03-16 | Hitachi Ltd | 薄膜el素子 |
JPH05226076A (ja) * | 1992-02-12 | 1993-09-03 | Mitsubishi Cable Ind Ltd | El発光体 |
JPH05307997A (ja) * | 1992-04-30 | 1993-11-19 | Pioneer Electron Corp | 有機エレクトロルミネッセンス素子 |
JPH09306669A (ja) * | 1996-05-15 | 1997-11-28 | Kemipuro Kasei Kk | 有機エレクトロルミネッセンス素子とその製造方法 |
JPH1050481A (ja) * | 1996-07-31 | 1998-02-20 | Pioneer Electron Corp | 有機エレクトロルミネセンス素子 |
JP2000082588A (ja) * | 1997-09-22 | 2000-03-21 | Fuji Electric Co Ltd | 有機発光素子およびその製造方法 |
JPH11260560A (ja) * | 1998-03-06 | 1999-09-24 | Denso Corp | El素子 |
JPH11273869A (ja) * | 1998-03-25 | 1999-10-08 | Matsushita Electric Ind Co Ltd | 有機発光素子及びその製造方法 |
JP2000231985A (ja) * | 1999-02-12 | 2000-08-22 | Denso Corp | 有機el素子 |
JP2000252063A (ja) * | 1999-03-01 | 2000-09-14 | Toppan Printing Co Ltd | 色切換発光素子、色切換発光素子用基板及びカラー表示装置 |
JP2002318556A (ja) * | 2001-04-20 | 2002-10-31 | Toshiba Corp | アクティブマトリクス型平面表示装置およびその製造方法 |
JP2004335319A (ja) * | 2003-05-09 | 2004-11-25 | Rohm Co Ltd | 有機el表示装置 |
Non-Patent Citations (1)
Title |
---|
See also references of EP1684550A4 * |
Cited By (29)
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JP7174902B2 (ja) | 2018-08-10 | 2022-11-18 | 株式会社小糸製作所 | 車輌用灯具 |
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US7855506B2 (en) | 2010-12-21 |
TW200514470A (en) | 2005-04-16 |
JPWO2005034586A1 (ja) | 2007-10-04 |
KR100818133B1 (ko) | 2008-03-31 |
KR20060039949A (ko) | 2006-05-09 |
EP1684550A1 (en) | 2006-07-26 |
TWI300314B (en) | 2008-08-21 |
EP1684550A4 (en) | 2011-08-24 |
US20070210700A1 (en) | 2007-09-13 |
JP4400570B2 (ja) | 2010-01-20 |
CN100484352C (zh) | 2009-04-29 |
CN1864440A (zh) | 2006-11-15 |
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