ATE416480T1 - Herstellungsverfahren für ein transparentes element mit transparenten elektroden und entsprechendes element - Google Patents

Herstellungsverfahren für ein transparentes element mit transparenten elektroden und entsprechendes element

Info

Publication number
ATE416480T1
ATE416480T1 AT05012998T AT05012998T ATE416480T1 AT E416480 T1 ATE416480 T1 AT E416480T1 AT 05012998 T AT05012998 T AT 05012998T AT 05012998 T AT05012998 T AT 05012998T AT E416480 T1 ATE416480 T1 AT E416480T1
Authority
AT
Austria
Prior art keywords
transparent
oxide
production method
electrodes
transparent electrodes
Prior art date
Application number
AT05012998T
Other languages
English (en)
Inventor
Gian-Carlo Poli
Joachim Grupp
Original Assignee
Asulab Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asulab Sa filed Critical Asulab Sa
Application granted granted Critical
Publication of ATE416480T1 publication Critical patent/ATE416480T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C03C17/2453—Coating containing SnO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
    • C03C17/3671—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use as electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/23—Mixtures
    • C03C2217/231—In2O3/SnO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/90—Other aspects of coatings
    • C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/90—Other aspects of coatings
    • C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
    • C03C2217/948—Layers comprising indium tin oxide [ITO]
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/154—Deposition methods from the vapour phase by sputtering
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment
    • C03C2218/328—Partly or completely removing a coating
    • C03C2218/33—Partly or completely removing a coating by etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
AT05012998T 2005-06-16 2005-06-16 Herstellungsverfahren für ein transparentes element mit transparenten elektroden und entsprechendes element ATE416480T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05012998A EP1734587B1 (de) 2005-06-16 2005-06-16 Herstellungsverfahren für ein transparentes Element mit transparenten Elektroden und entsprechendes Element

Publications (1)

Publication Number Publication Date
ATE416480T1 true ATE416480T1 (de) 2008-12-15

Family

ID=36097027

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05012998T ATE416480T1 (de) 2005-06-16 2005-06-16 Herstellungsverfahren für ein transparentes element mit transparenten elektroden und entsprechendes element

Country Status (11)

Country Link
US (1) US7494834B2 (de)
EP (1) EP1734587B1 (de)
JP (1) JP4786427B2 (de)
KR (1) KR101232979B1 (de)
CN (1) CN100557774C (de)
AT (1) ATE416480T1 (de)
DE (1) DE602005011415D1 (de)
ES (1) ES2318382T3 (de)
HK (1) HK1100463A1 (de)
SG (1) SG128592A1 (de)
TW (1) TWI391980B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1734587B1 (de) * 2005-06-16 2008-12-03 Asulab S.A. Herstellungsverfahren für ein transparentes Element mit transparenten Elektroden und entsprechendes Element
JP4818216B2 (ja) * 2007-07-20 2011-11-16 信越ポリマー株式会社 電極シートの製造方法および静電容量型入力装置
CN100472290C (zh) * 2007-08-30 2009-03-25 深圳和而泰智能控制股份有限公司 电容式触摸屏及制作方法
CN102362245A (zh) * 2009-03-04 2012-02-22 南东植 触摸屏传感器
GB2472614B (en) * 2009-08-11 2014-11-19 M Solv Ltd Capacitive touch panels
CN101794186A (zh) * 2010-03-22 2010-08-04 牧东光电（苏州）有限公司 电容触控面板感应层的加工方法
JP5844002B2 (ja) * 2013-03-07 2016-01-13 三菱電機株式会社 表示装置

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GB784673A (en) * 1956-02-28 1957-10-16 Standard Telephones Cables Ltd A method of producing printed circuit master drawings
JPS60260392A (ja) 1984-06-08 1985-12-23 Semiconductor Energy Lab Co Ltd 透光性導電膜の光加工方法
AU1258392A (en) 1991-01-17 1992-08-27 Rgb Dynamics Capacitive touch screen
US6300594B1 (en) 1998-02-19 2001-10-09 Ricoh Microelectronics Company, Ltd. Method and apparatus for machining an electrically conductive film
JPH11226773A (ja) * 1998-02-19 1999-08-24 Ricoh Micro Electronics Kk 導電性膜の加工方法及び装置
DE69831860T2 (de) * 1998-07-04 2006-07-20 Au Optronics Corp. Elektrode zur verwendung in elektrooptischen bauelementen
US6034813A (en) * 1998-08-24 2000-03-07 Southwall Technologies, Inc. Wavelength selective applied films with glare control
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JP2001202826A (ja) * 2000-01-21 2001-07-27 Gunze Ltd 透明導電性フィルム
DE10019888B4 (de) * 2000-04-20 2011-06-16 Schott Ag Transparente elektronische Bauelementanordnung und Verfahren zu ihrer Herstellung
JP2002273582A (ja) * 2001-03-16 2002-09-25 Ricoh Microelectronics Co Ltd ビーム加工装置及びタッチパネル基板の製造方法
EP1394640B1 (de) * 2002-08-30 2010-03-24 Asulab S.A. Uhr mit taktiler Ablesung und Betätigung der Zeitinformation
EP1457865B1 (de) * 2003-03-12 2017-11-08 Asulab S.A. Substrat mit unsichtbaren elektroden und dessen herstellungsverfahren
JP4459578B2 (ja) * 2003-09-08 2010-04-28 株式会社フジクラ 色素増感太陽電池
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EP1734587B1 (de) * 2005-06-16 2008-12-03 Asulab S.A. Herstellungsverfahren für ein transparentes Element mit transparenten Elektroden und entsprechendes Element
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Also Published As

Publication number Publication date
ES2318382T3 (es) 2009-05-01
CN1881536A (zh) 2006-12-20
TW200717584A (en) 2007-05-01
HK1100463A1 (en) 2007-09-21
US20060286702A1 (en) 2006-12-21
EP1734587B1 (de) 2008-12-03
KR20060131663A (ko) 2006-12-20
JP2006351531A (ja) 2006-12-28
DE602005011415D1 (de) 2009-01-15
US7494834B2 (en) 2009-02-24
EP1734587A1 (de) 2006-12-20
SG128592A1 (en) 2007-01-30
KR101232979B1 (ko) 2013-02-13
TWI391980B (zh) 2013-04-01
CN100557774C (zh) 2009-11-04
JP4786427B2 (ja) 2011-10-05

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