ATE504946T1 - Verfahren zur herstellung von vertikal- kohlenstoff-nanoröhren-feldeffekttransistoren zur anordnung in arrays und dadurch gebildete feldeffekttransistoren und arrays - Google Patents

Verfahren zur herstellung von vertikal- kohlenstoff-nanoröhren-feldeffekttransistoren zur anordnung in arrays und dadurch gebildete feldeffekttransistoren und arrays

Info

Publication number
ATE504946T1
ATE504946T1 AT05707994T AT05707994T ATE504946T1 AT E504946 T1 ATE504946 T1 AT E504946T1 AT 05707994 T AT05707994 T AT 05707994T AT 05707994 T AT05707994 T AT 05707994T AT E504946 T1 ATE504946 T1 AT E504946T1
Authority
AT
Austria
Prior art keywords
field effect
carbon nanotube
effect transistors
arrays
gate electrode
Prior art date
Application number
AT05707994T
Other languages
English (en)
Inventor
Toshiharu Furukawa
Mark Hakey
Steven Holmes
David Horak
Charles Koburger
Peter Mitchell
Larry Nesbit
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE504946T1 publication Critical patent/ATE504946T1/de

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/122—Single quantum well structures
    • H01L29/125—Quantum wire structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT05707994T 2004-02-12 2005-02-10 Verfahren zur herstellung von vertikal- kohlenstoff-nanoröhren-feldeffekttransistoren zur anordnung in arrays und dadurch gebildete feldeffekttransistoren und arrays ATE504946T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/777,576 US7829883B2 (en) 2004-02-12 2004-02-12 Vertical carbon nanotube field effect transistors and arrays
PCT/EP2005/050591 WO2005078819A1 (en) 2004-02-12 2005-02-10 Methods of fabricating vertical carbon nanotube field effect transistors for arrangement in arrays and field effect transistors and arrays formed thereby

Publications (1)

Publication Number Publication Date
ATE504946T1 true ATE504946T1 (de) 2011-04-15

Family

ID=34838018

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05707994T ATE504946T1 (de) 2004-02-12 2005-02-10 Verfahren zur herstellung von vertikal- kohlenstoff-nanoröhren-feldeffekttransistoren zur anordnung in arrays und dadurch gebildete feldeffekttransistoren und arrays

Country Status (9)

Country Link
US (2) US7829883B2 (de)
EP (1) EP1714330B1 (de)
JP (1) JP5089174B2 (de)
KR (1) KR100992296B1 (de)
CN (1) CN1943055B (de)
AT (1) ATE504946T1 (de)
DE (1) DE602005027316D1 (de)
TW (1) TWI344662B (de)
WO (1) WO2005078819A1 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7038299B2 (en) 2003-12-11 2006-05-02 International Business Machines Corporation Selective synthesis of semiconducting carbon nanotubes
US7374793B2 (en) 2003-12-11 2008-05-20 International Business Machines Corporation Methods and structures for promoting stable synthesis of carbon nanotubes
US20050167655A1 (en) * 2004-01-29 2005-08-04 International Business Machines Corporation Vertical nanotube semiconductor device structures and methods of forming the same
US7211844B2 (en) 2004-01-29 2007-05-01 International Business Machines Corporation Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage
US7109546B2 (en) 2004-06-29 2006-09-19 International Business Machines Corporation Horizontal memory gain cells
US7233071B2 (en) * 2004-10-04 2007-06-19 International Business Machines Corporation Low-k dielectric layer based upon carbon nanostructures
DE102004049453A1 (de) * 2004-10-11 2006-04-20 Infineon Technologies Ag Elektrischer Schaltkreis mit einer Nanostruktur und Verfahren zum Herstellen einer Kontaktierung einer Nanostruktur
TWI324773B (en) 2005-05-09 2010-05-11 Nantero Inc Non-volatile shadow latch using a nanotube switch
US7781862B2 (en) * 2005-05-09 2010-08-24 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
US7479654B2 (en) 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
WO2007092770A2 (en) * 2006-02-02 2007-08-16 William Marsh Rice University Fabrication de dispositifs electriques par façonnage de nanotubes
US8506921B2 (en) 2006-02-07 2013-08-13 William Marsh Rice University Production of vertical arrays of small diameter single-walled carbon nanotubes
US20070183189A1 (en) * 2006-02-08 2007-08-09 Thomas Nirschl Memory having nanotube transistor access device
US7626190B2 (en) * 2006-06-02 2009-12-01 Infineon Technologies Ag Memory device, in particular phase change random access memory device with transistor, and method for fabricating a memory device
CA2655340C (en) * 2006-06-12 2016-10-25 President And Fellows Of Harvard College Nanosensors and related technologies
KR100803690B1 (ko) * 2006-08-10 2008-02-20 삼성전자주식회사 전기적- 기계적 비휘발성 메모리 장치 및 그 제조 방법.
KR100781972B1 (ko) * 2006-09-18 2007-12-06 삼성전자주식회사 메모리 소자 및 그의 제조방법
WO2009023304A2 (en) * 2007-05-02 2009-02-19 Atomate Corporation High density nanotube devices
KR101478540B1 (ko) 2007-09-17 2015-01-02 삼성전자 주식회사 트랜지스터의 채널로 나노 물질을 이용하는 바이오 센서 및그 제조 방법
US7892956B2 (en) * 2007-09-24 2011-02-22 International Business Machines Corporation Methods of manufacture of vertical nanowire FET devices
US8395901B2 (en) * 2007-11-13 2013-03-12 William Marsh Rice University Vertically-stacked electronic devices having conductive carbon films
JP5256850B2 (ja) * 2008-05-29 2013-08-07 ミツミ電機株式会社 電界効果トランジスタ及びその製造方法
US8350360B1 (en) 2009-08-28 2013-01-08 Lockheed Martin Corporation Four-terminal carbon nanotube capacitors
US8405189B1 (en) * 2010-02-08 2013-03-26 Lockheed Martin Corporation Carbon nanotube (CNT) capacitors and devices integrated with CNT capacitors
EP2363958A1 (de) * 2010-03-04 2011-09-07 Thomson Licensing Feldprogrammierbares Gate-Array
US8455365B2 (en) * 2011-05-19 2013-06-04 Dechao Guo Self-aligned carbon electronics with embedded gate electrode
US8772782B2 (en) 2011-11-23 2014-07-08 International Business Machines Corporation Transistor employing vertically stacked self-aligned carbon nanotubes
CN104576321A (zh) * 2015-01-30 2015-04-29 京东方科技集团股份有限公司 一种电极结构、其制作方法、显示基板及显示装置
CN107572504B (zh) * 2016-07-05 2020-07-10 中国科学院金属研究所 一种柔性薄层碳覆盖碳纳米管垂直阵列的制备方法
CN206067049U (zh) 2016-07-29 2017-04-05 合肥鑫晟光电科技有限公司 膜材以及撕膜装置
US11417729B2 (en) * 2019-08-29 2022-08-16 Taiwan Semiconductor Manufacturing Company, Ltd. Transistors with channels formed of low-dimensional materials and method forming same

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5514879A (en) * 1990-11-20 1996-05-07 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
JP3745392B2 (ja) * 1994-05-26 2006-02-15 株式会社ルネサステクノロジ 半導体装置
US5796573A (en) 1997-05-29 1998-08-18 International Business Machines Corporation Overhanging separator for self-defining stacked capacitor
US6250984B1 (en) 1999-01-25 2001-06-26 Agere Systems Guardian Corp. Article comprising enhanced nanotube emitter structure and process for fabricating article
JP3730476B2 (ja) * 2000-03-31 2006-01-05 株式会社東芝 電界放出型冷陰極及びその製造方法
SE520109C2 (sv) * 2000-05-17 2003-05-27 Ericsson Telefon Ab L M Effekttransistorer för radiofrekvenser
KR100360476B1 (ko) 2000-06-27 2002-11-08 삼성전자 주식회사 탄소나노튜브를 이용한 나노 크기 수직 트랜지스터 및 그제조방법
DE10036897C1 (de) 2000-07-28 2002-01-03 Infineon Technologies Ag Feldeffekttransistor, Schaltungsanordnung und Verfahren zum Herstellen eines Feldeffekttransistors
EP1662575B1 (de) 2000-11-01 2007-10-17 Japan Science and Technology Agency Ein NOT-Schaltkreis
US6423583B1 (en) 2001-01-03 2002-07-23 International Business Machines Corporation Methodology for electrically induced selective breakdown of nanotubes
US6440763B1 (en) * 2001-03-22 2002-08-27 The United States Of America As Represented By The Secretary Of The Navy Methods for manufacture of self-aligned integrally gated nanofilament field emitter cell and array
US6525453B2 (en) * 2001-05-02 2003-02-25 Huang Chung Cheng Field emitting display
US7084507B2 (en) 2001-05-02 2006-08-01 Fujitsu Limited Integrated circuit device and method of producing the same
JP4225716B2 (ja) * 2001-09-11 2009-02-18 富士通株式会社 円筒状多層構造体による半導体装置
EP1468423A2 (de) 2002-01-18 2004-10-20 California Institute Of Technology Architektur auf array-basis für die molekulare elektronik
JP5165828B2 (ja) 2002-02-09 2013-03-21 三星電子株式会社 炭素ナノチューブを用いるメモリ素子及びその製造方法
DE60230110D1 (de) * 2002-02-25 2009-01-15 St Microelectronics Srl Optisch lesbarer Molekularspeicher hergestellt mit Hilfe von Kohlenstoff-Nanoröhren und Verfahren zum Speichern von Information in diesem Molekularspeicher
US6515325B1 (en) 2002-03-06 2003-02-04 Micron Technology, Inc. Nanotube semiconductor devices and methods for making the same
US6891227B2 (en) 2002-03-20 2005-05-10 International Business Machines Corporation Self-aligned nanotube field effect transistor and method of fabricating same
US20030211724A1 (en) 2002-05-10 2003-11-13 Texas Instruments Incorporated Providing electrical conductivity between an active region and a conductive layer in a semiconductor device using carbon nanotubes
JP4416376B2 (ja) * 2002-05-13 2010-02-17 富士通株式会社 半導体装置及びその製造方法
US6830981B2 (en) * 2002-07-02 2004-12-14 Industrial Technology Research Institute Vertical nanotube transistor and process for fabricating the same
US6979947B2 (en) 2002-07-09 2005-12-27 Si Diamond Technology, Inc. Nanotriode utilizing carbon nanotubes and fibers
CN1472814A (zh) * 2002-08-01 2004-02-04 �й���ѧԺ�����о��� 基于碳纳米管单电子晶体管设计的单电子存储器及制法
DE10250984A1 (de) 2002-10-29 2004-05-19 Hahn-Meitner-Institut Berlin Gmbh Feldeffekttransistor sowie Verfahren zu seiner Herstellung
DE10250830B4 (de) 2002-10-31 2015-02-26 Qimonda Ag Verfahren zum Herstellung eines Schaltkreis-Arrays
DE10250829B4 (de) * 2002-10-31 2006-11-02 Infineon Technologies Ag Nichtflüchtige Speicherzelle, Speicherzellen-Anordnung und Verfahren zum Herstellen einer nichtflüchtigen Speicherzelle
JP4071601B2 (ja) * 2002-11-11 2008-04-02 富士通株式会社 半導体装置
KR100790859B1 (ko) 2002-11-15 2008-01-03 삼성전자주식회사 수직 나노튜브를 이용한 비휘발성 메모리 소자
KR100493166B1 (ko) 2002-12-30 2005-06-02 삼성전자주식회사 수직나노튜브를 이용한 메모리
US6933222B2 (en) * 2003-01-02 2005-08-23 Intel Corporation Microcircuit fabrication and interconnection
WO2004105140A1 (ja) 2003-05-22 2004-12-02 Fujitsu Limited 電界効果トランジスタ及びその製造方法
JP4762522B2 (ja) * 2003-10-28 2011-08-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7038299B2 (en) 2003-12-11 2006-05-02 International Business Machines Corporation Selective synthesis of semiconducting carbon nanotubes
US7374793B2 (en) 2003-12-11 2008-05-20 International Business Machines Corporation Methods and structures for promoting stable synthesis of carbon nanotubes
US7211844B2 (en) 2004-01-29 2007-05-01 International Business Machines Corporation Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage
US20050167655A1 (en) 2004-01-29 2005-08-04 International Business Machines Corporation Vertical nanotube semiconductor device structures and methods of forming the same

Also Published As

Publication number Publication date
KR100992296B1 (ko) 2010-11-08
US20050179029A1 (en) 2005-08-18
TW200535896A (en) 2005-11-01
JP5089174B2 (ja) 2012-12-05
CN1943055A (zh) 2007-04-04
EP1714330A1 (de) 2006-10-25
DE602005027316D1 (de) 2011-05-19
WO2005078819A1 (en) 2005-08-25
EP1714330B1 (de) 2011-04-06
US7820502B2 (en) 2010-10-26
US20080044954A1 (en) 2008-02-21
KR20060130154A (ko) 2006-12-18
US7829883B2 (en) 2010-11-09
CN1943055B (zh) 2011-02-23
JP2007523477A (ja) 2007-08-16
TWI344662B (en) 2011-07-01

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