JP2006351531A - 透明電極を有する透明装置の製造方法 - Google Patents
透明電極を有する透明装置の製造方法 Download PDFInfo
- Publication number
- JP2006351531A JP2006351531A JP2006161874A JP2006161874A JP2006351531A JP 2006351531 A JP2006351531 A JP 2006351531A JP 2006161874 A JP2006161874 A JP 2006161874A JP 2006161874 A JP2006161874 A JP 2006161874A JP 2006351531 A JP2006351531 A JP 2006351531A
- Authority
- JP
- Japan
- Prior art keywords
- oxide layer
- conductive oxide
- transparent
- electrode
- trimming line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000009966 trimming Methods 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000000151 deposition Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 13
- 230000008878 coupling Effects 0.000 claims description 17
- 238000010168 coupling process Methods 0.000 claims description 17
- 238000005859 coupling reaction Methods 0.000 claims description 17
- 238000001465 metallisation Methods 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 7
- 239000003989 dielectric material Substances 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 2
- 239000011521 glass Substances 0.000 description 10
- 239000013078 crystal Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000003698 laser cutting Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
- C03C17/2453—Coating containing SnO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
- C03C17/3671—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use as electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/23—Mixtures
- C03C2217/231—In2O3/SnO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/90—Other aspects of coatings
- C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/90—Other aspects of coatings
- C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
- C03C2217/948—Layers comprising indium tin oxide [ITO]
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/154—Deposition methods from the vapour phase by sputtering
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
- C03C2218/328—Partly or completely removing a coating
- C03C2218/33—Partly or completely removing a coating by etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Geochemistry & Mineralogy (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Manufacturing Of Electric Cables (AREA)
- Switches That Are Operated By Magnetic Or Electric Fields (AREA)
- Electroluminescent Light Sources (AREA)
- Non-Insulated Conductors (AREA)
- Contacts (AREA)
- Manufacture Of Switches (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Abstract
【課題】 透明な電極を有する透明な装置を製造する方法を提供すること。
【解決手段】 本発明の方法は、(A)透明な基板(1)の表面の少なくとも一部の上に、透明な導電性酸化物層(2)を堆積するステップと、(B)前記導電性酸化物層に、導電パス(6)により接触パッド(8)に接続する少なくとも1つの電極(4.6.8)を、前記少なくとも1つの電極の外径に沿って前記導電性酸化物層を除去することにより、形成するステップとを有し、これにより、前記導電性酸化物層の一部分(12)を、残りの部分(14)から切り離す第1トリミングライン(10)を形成し、前記一部分は、ある電位の電極を構成し、前記残余部分は、浮遊電位になり、(C)第2のトリミングライン(10’)を、前記第1トリミングラインの周囲に形成するステップをさらに有する。
【選択図】 図2
Description
2 透明導電性酸化物層
4 電極
6 導電パス
8 接触パッド
10 第1トリミングライン
10’第2トリミングライン
10,10’ トリミングライン
12 活性部分
14 残余部分
16 領域
18 分離ライン
20 金属化層
Claims (11)
- 透明な電極を有する透明な装置を製造する方法において、
(A) 透明な基板(1)の表面の少なくとも一部の上に、透明な導電性酸化物層(2)を堆積するステップと、
(B) 前記導電性酸化物層(2)内に、導電パス(6)により接触パッド(8)に接続する少なくとも1つの電極(4.6.8)を、前記少なくとも1つの電極(4、6、8)の外径に沿って前記導電性酸化物層(2)を除去することにより、形成するステップと
を有し、
これにより、前記導電性酸化物層(2)の一部分(12)を、前記導電性酸化物層(2)の残りの残余部分(14)から切り離す第1トリミングライン(10)を形成し、
前記一部分(12)は、前記電極(4、6、8)を構成し、ある電位を有するようになり、
前記残余部分(14)は、浮遊電位になり、
(C) 少なくとも第2のトリミングライン(10’)を、前記第1トリミングライン(10)の周囲に形成するステップ
をさらに有する
ことを特徴とする透明電極を有する透明装置の製造方法。 - 透明な電極を有する透明な装置を製造する方法において、
(A) 透明な基板(1)の表面の少なくとも一部の上に、透明な導電性酸化物層(2)を堆積するステップと、
(B) 前記導電性酸化物層(2)内に、導電パス(6)により接触パッド(8)に接続する少なくとも1つの電極(4.6.8)を、前記少なくとも1つの電極の外径に沿って前記導電性酸化物層(2)を除去することにより、形成するステップと
を有し、
これにより、前記導電性酸化物層(2)の活性部分(12)を、前記導電性酸化物層(2)の残りの残余部分(14)から切り離す第1トリミングライン(10)を形成し、
前記一部分(12)は、前記電極(4、6、8)を構成し、ある電位を有するようになり、
前記残余部分(14)は、浮遊電位になり、
(D) 前記浮遊電位の残余部分(14)を、互いに電気的に接続していない少なくとも2個の孤立した領域(16)に、分離ライン(18)に沿って前記導電性酸化物層(2)を除去することにより、分割するステップ
を更に有する
ことを特徴とする透明電極を有する透明装置の製造方法。 - 透明な電極を有する透明な装置を製造する方法において、
(A) 透明な基板(1)の表面の少なくとも一部の上に、透明な導電性酸化物層(2)を堆積するステップと、
(B) 前記導電性酸化物層(2)内に、導電パス(6)により接触パッド(8)に接続する少なくとも1つの電極(4.6.8)を、前記少なくとも1つの電極の外径に沿って前記導電性酸化物層(2)を除去することにより、形成するステップと
を有し、
これにより、前記導電性酸化物層(2)の一部分(12)を、前記導電性酸化物層(2)の残りの残余部分(14)から切り離す第1トリミングライン(10)を形成し、
前記一部分(12)は、前記電極(4、6、8)を構成し、ある電位を有するようになり、
前記残余部分(14)は、浮遊電位になり、
(C) 少なくとも第2のトリミングライン(10’)を、前記第1トリミングライン(10)の周囲に形成するステップと、
(D) 前記浮遊電位の残余部分(14)を、互いに電気的に接続していない少なくとも2個の孤立した領域(16)に、分離ライン(18)に沿って前記導電性酸化物層(2)を除去することにより、分割するステップと
をさらに有する
ことを特徴とする透明電極を有する透明装置の製造方法。 - 前記透明な導電性酸化物層(2)を堆積した後、
前記基板(1)の周囲で、前記導電性酸化物層(2)上に金属化層(20)を堆積し、
電極(4)と、導電パス(6)と、接触パッド(8)とを前記トリミングライン(10、10’)に沿ってトリミングし、接触パッド(8)上の導電性酸化物層と金属化層の両方を除去する
ことを特徴とする請求項1または3記載の製造方法。 - 金属化層(20)を基板(1)の周囲に最初に堆積し、
その後、透明な酸化物層(2)を堆積し、
その結果、前記酸化物層(2)が、前記金属化層(20)を少なくとも部分的にカバーし、
電極(4)と、導電パス(6)と、接触パッド(8)とを前記トリミングライン(10、10’)に沿ってトリミングし、接触パッド(8)上の導電性酸化物層と金属化層の両方を除去する
ことを特徴とする請求項1または3記載の製造方法。 - 前記トリミングライン(10、10’)と分離ライン(18)とは、少なくとも光学的補償層を堆積することにより、光学的に補償される
ことを特徴とする請求項1−5のいずれかに記載の製造方法。 - 低屈折率の透明誘電体材料の第1層と、それより高屈折率の透明誘電体材料の第2層とが、連続して堆積される
ことを特徴とする請求項6記載の製造方法。 - 前記トリミングラインと分離ラインの幅は、1μm−10μmの間で、好ましくは5μmである
ことを特徴とする請求項1−7のいずれかに記載の製造方法。 - (A) 透明な導電性酸化物層(2)により少なくとも部分的にカバーされた透明な基板(1)と、
前記導電性酸化物層(2)に少なくとも1個の電極(4)が形成され、
(B) 前記導電性酸化物層(2)の活性部分(12)を、前記導電性酸化物層(2)の残りの残余部分(14)から分離するトリミングライン(10)と、
前記活性部分(12)が、電極(4)を形成し、ある電位となり、
前記残余部分(14)は、浮遊電位となり、
(C) 前記導電性酸化物層(2)の活性部分(12)と浮遊電位部分(14)との間の浮遊容量性結合を阻止する手段と
を有する
ことを特徴とする透明基板を有する装置。 - 前記浮遊容量性結合を阻止する手段は、前記第1トリミングライン(10)の周囲に形成された第2トリミングライン(10’)を有する
ことを特徴とする請求項9記載の装置。 - 前記浮遊容量性結合を阻止する手段は、前記導電性酸化物層(2)の浮遊電位部分(14)を、互いに電気的に接続していない少なくとも2個の孤立した領域(16)に分ける分離ライン(18)を有する
ことを特徴とする請求項9または10記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05012998A EP1734587B1 (fr) | 2005-06-16 | 2005-06-16 | Procédé de fabrication d'un élément transparent comprenant des électrodes également transparentes et l'élément correspondant |
EP05012998.0 | 2005-06-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006351531A true JP2006351531A (ja) | 2006-12-28 |
JP4786427B2 JP4786427B2 (ja) | 2011-10-05 |
Family
ID=36097027
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006161874A Expired - Fee Related JP4786427B2 (ja) | 2005-06-16 | 2006-06-12 | 透明電極を有する透明装置の製造方法 |
Country Status (11)
Country | Link |
---|---|
US (1) | US7494834B2 (ja) |
EP (1) | EP1734587B1 (ja) |
JP (1) | JP4786427B2 (ja) |
KR (1) | KR101232979B1 (ja) |
CN (1) | CN100557774C (ja) |
AT (1) | ATE416480T1 (ja) |
DE (1) | DE602005011415D1 (ja) |
ES (1) | ES2318382T3 (ja) |
HK (1) | HK1100463A1 (ja) |
SG (1) | SG128592A1 (ja) |
TW (1) | TWI391980B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009026639A (ja) * | 2007-07-20 | 2009-02-05 | Shin Etsu Polymer Co Ltd | 電極シートの製造方法および静電容量型入力装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES2318382T3 (es) * | 2005-06-16 | 2009-05-01 | Asulab S.A. | Procedimiento de fabricacion de un elemento transparente que comprende electrodos asimismo transparentes y elemento correspondiente. |
CN100472290C (zh) * | 2007-08-30 | 2009-03-25 | 深圳和而泰智能控制股份有限公司 | 电容式触摸屏及制作方法 |
EP2405328A4 (en) * | 2009-03-04 | 2013-10-02 | Dong Sik Nam | TOUCH SCREEN SENSOR |
GB2472614B (en) * | 2009-08-11 | 2014-11-19 | M Solv Ltd | Capacitive touch panels |
CN101794186A (zh) * | 2010-03-22 | 2010-08-04 | 牧东光电(苏州)有限公司 | 电容触控面板感应层的加工方法 |
CN105144056B (zh) * | 2013-03-07 | 2018-01-23 | 三菱电机株式会社 | 显示装置 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB784673A (en) * | 1956-02-28 | 1957-10-16 | Standard Telephones Cables Ltd | A method of producing printed circuit master drawings |
JPH11226773A (ja) * | 1998-02-19 | 1999-08-24 | Ricoh Micro Electronics Kk | 導電性膜の加工方法及び装置 |
JP2000101114A (ja) * | 1998-07-04 | 2000-04-07 | Internatl Business Mach Corp <Ibm> | 透明電極 |
JP2001202826A (ja) * | 2000-01-21 | 2001-07-27 | Gunze Ltd | 透明導電性フィルム |
WO2001082378A1 (de) * | 2000-04-20 | 2001-11-01 | Schott Glas | Trägersubstrat für elektronische bauteile |
JP2002273582A (ja) * | 2001-03-16 | 2002-09-25 | Ricoh Microelectronics Co Ltd | ビーム加工装置及びタッチパネル基板の製造方法 |
JP2003504892A (ja) * | 1999-07-08 | 2003-02-04 | イシス イノベイション リミテッド | プリント回路の製造 |
JP2004093568A (ja) * | 2002-08-30 | 2004-03-25 | Asulab Sa | 時間データの接触式読み取り及び制御可能な計時器 |
JP2004341488A (ja) * | 2003-03-12 | 2004-12-02 | Asulab Sa | 透明な電極を備えた基板および該基板を含む装置 |
JP2006032085A (ja) * | 2004-07-15 | 2006-02-02 | Fujikura Ltd | 静電容量式近接センサ |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60260392A (ja) | 1984-06-08 | 1985-12-23 | Semiconductor Energy Lab Co Ltd | 透光性導電膜の光加工方法 |
WO1992013328A1 (en) | 1991-01-17 | 1992-08-06 | Rgb Dynamics | Capacitive touch screen |
US6300594B1 (en) | 1998-02-19 | 2001-10-09 | Ricoh Microelectronics Company, Ltd. | Method and apparatus for machining an electrically conductive film |
US6034813A (en) * | 1998-08-24 | 2000-03-07 | Southwall Technologies, Inc. | Wavelength selective applied films with glare control |
JP4459578B2 (ja) * | 2003-09-08 | 2010-04-28 | 株式会社フジクラ | 色素増感太陽電池 |
CN100484352C (zh) * | 2003-10-02 | 2009-04-29 | 株式会社丰田自动织机 | 电致发光元件 |
DE10359156B4 (de) * | 2003-12-16 | 2007-08-30 | Schott Ag | Anzeigevorrichtung |
ATE439335T1 (de) | 2003-12-16 | 2009-08-15 | Asulab Sa | Verfahren zur herstellung eines transparenten elements mit unsichtbaren elektroden |
JP2005190768A (ja) * | 2003-12-25 | 2005-07-14 | Toyota Industries Corp | 照明装置 |
DE102004020245A1 (de) * | 2004-04-22 | 2005-12-22 | Schott Ag | Organisches, elektro-optisches Element mit erhöhter Auskoppeleffizienz |
JP4811945B2 (ja) * | 2004-11-29 | 2011-11-09 | 株式会社カネカ | 薄膜光電変換装置 |
ES2318382T3 (es) * | 2005-06-16 | 2009-05-01 | Asulab S.A. | Procedimiento de fabricacion de un elemento transparente que comprende electrodos asimismo transparentes y elemento correspondiente. |
US7196262B2 (en) * | 2005-06-20 | 2007-03-27 | Solyndra, Inc. | Bifacial elongated solar cell devices |
US7314773B2 (en) * | 2005-08-17 | 2008-01-01 | The Trustees Of Princeton University | Low resistance thin film organic solar cell electrodes |
US9166197B2 (en) * | 2005-08-29 | 2015-10-20 | The Hong Kong University Of Science And Technology | Metallic anode treated by carbon tetrafluoride plasma for organic light emitting device |
WO2007033490A1 (en) * | 2005-09-23 | 2007-03-29 | The Governors Of The University Of Alberta C/O University Of Alberta | Transparent, conductive film with a large birefringence |
US20070103066A1 (en) * | 2005-11-04 | 2007-05-10 | D Andrade Brian W | Stacked OLEDs with a reflective conductive layer |
US20070159574A1 (en) * | 2006-01-06 | 2007-07-12 | Eastman Kodak Company | Common transparent electrode for reduced voltage displays |
US20080053518A1 (en) * | 2006-09-05 | 2008-03-06 | Pen-Hsiu Chang | Transparent solar cell system |
-
2005
- 2005-06-16 ES ES05012998T patent/ES2318382T3/es active Active
- 2005-06-16 EP EP05012998A patent/EP1734587B1/fr active Active
- 2005-06-16 AT AT05012998T patent/ATE416480T1/de not_active IP Right Cessation
- 2005-06-16 DE DE602005011415T patent/DE602005011415D1/de active Active
-
2006
- 2006-06-07 TW TW095120230A patent/TWI391980B/zh not_active IP Right Cessation
- 2006-06-08 SG SG200603964A patent/SG128592A1/en unknown
- 2006-06-12 JP JP2006161874A patent/JP4786427B2/ja not_active Expired - Fee Related
- 2006-06-15 KR KR1020060053692A patent/KR101232979B1/ko not_active IP Right Cessation
- 2006-06-15 CN CNB2006100922512A patent/CN100557774C/zh not_active Expired - Fee Related
- 2006-06-16 US US11/424,700 patent/US7494834B2/en not_active Expired - Fee Related
-
2007
- 2007-05-29 HK HK07105682.5A patent/HK1100463A1/xx not_active IP Right Cessation
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB784673A (en) * | 1956-02-28 | 1957-10-16 | Standard Telephones Cables Ltd | A method of producing printed circuit master drawings |
JPH11226773A (ja) * | 1998-02-19 | 1999-08-24 | Ricoh Micro Electronics Kk | 導電性膜の加工方法及び装置 |
JP2000101114A (ja) * | 1998-07-04 | 2000-04-07 | Internatl Business Mach Corp <Ibm> | 透明電極 |
JP2003504892A (ja) * | 1999-07-08 | 2003-02-04 | イシス イノベイション リミテッド | プリント回路の製造 |
JP2001202826A (ja) * | 2000-01-21 | 2001-07-27 | Gunze Ltd | 透明導電性フィルム |
WO2001082378A1 (de) * | 2000-04-20 | 2001-11-01 | Schott Glas | Trägersubstrat für elektronische bauteile |
JP2002273582A (ja) * | 2001-03-16 | 2002-09-25 | Ricoh Microelectronics Co Ltd | ビーム加工装置及びタッチパネル基板の製造方法 |
JP2004093568A (ja) * | 2002-08-30 | 2004-03-25 | Asulab Sa | 時間データの接触式読み取り及び制御可能な計時器 |
JP2004341488A (ja) * | 2003-03-12 | 2004-12-02 | Asulab Sa | 透明な電極を備えた基板および該基板を含む装置 |
JP2006032085A (ja) * | 2004-07-15 | 2006-02-02 | Fujikura Ltd | 静電容量式近接センサ |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009026639A (ja) * | 2007-07-20 | 2009-02-05 | Shin Etsu Polymer Co Ltd | 電極シートの製造方法および静電容量型入力装置 |
Also Published As
Publication number | Publication date |
---|---|
DE602005011415D1 (de) | 2009-01-15 |
TWI391980B (zh) | 2013-04-01 |
SG128592A1 (en) | 2007-01-30 |
ES2318382T3 (es) | 2009-05-01 |
US7494834B2 (en) | 2009-02-24 |
CN100557774C (zh) | 2009-11-04 |
US20060286702A1 (en) | 2006-12-21 |
JP4786427B2 (ja) | 2011-10-05 |
TW200717584A (en) | 2007-05-01 |
ATE416480T1 (de) | 2008-12-15 |
KR20060131663A (ko) | 2006-12-20 |
HK1100463A1 (en) | 2007-09-21 |
CN1881536A (zh) | 2006-12-20 |
KR101232979B1 (ko) | 2013-02-13 |
EP1734587B1 (fr) | 2008-12-03 |
EP1734587A1 (fr) | 2006-12-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4786427B2 (ja) | 透明電極を有する透明装置の製造方法 | |
KR101133329B1 (ko) | 안 보이는 전극을 지닌 투명 소자를 제조하기 위한 방법 | |
US20150060125A1 (en) | Touch panel | |
RU2463642C2 (ru) | Емкостной сенсорный датчик, интегрированный с панелью окна, и способ его изготовления | |
US20040180480A1 (en) | Thin film transistor substrate and method for fabricating the same | |
US20130266724A1 (en) | Method of manufacturing touch screen panel | |
US20150091005A1 (en) | Flexible display device and manufacturing method thereof | |
US20120032898A1 (en) | Projected capacitive touch panel and fabrication method thereof | |
WO2016029548A1 (zh) | 触摸屏、其制作方法及触摸显示装置 | |
KR20050036049A (ko) | 표시 소자용 박막 트랜지스터 기판 및 그 제조 방법 | |
TW201131441A (en) | Fabrication of touch sensor panel using laser ablation | |
JP2009025803A (ja) | 表示基板及びその製造方法 | |
TWI492122B (zh) | 觸控感測裝置及其製作方法 | |
JP6387105B2 (ja) | 電子機器用透明カバー | |
US20190204947A1 (en) | Touch module and manufacturing method thereof, and touch screen | |
FR2658675A1 (fr) | Dispositif formant ecran tactile du type capacitif. | |
US10564463B2 (en) | Touch panel-attached display device and method for manufacturing touch panel-attached display device | |
KR20110061422A (ko) | 정전용량 터치 패널 | |
US20140210765A1 (en) | Capacitive Single Layer Multi-Touch Panel Having Improved Response Characteristics | |
JP2008241921A (ja) | フォトマスク、およびフォトマスクの製造方法 | |
US8384681B2 (en) | Touch screen panel and method of fabricating the same | |
US20140022199A1 (en) | Capacitive touch panel having improved response characteristics | |
WO2018130004A1 (zh) | 触控基板及其制备方法、显示装置 | |
US10126895B2 (en) | Cover plate and manufacturing method thereof, and manufacturing method of display device | |
CN109976572B (zh) | 触控面板、触控显示装置及触控面板制作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090526 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091112 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110707 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110712 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110713 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4786427 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140722 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |