SG128592A1 - Method of manufacturing a transparent element including transparent electrodes - Google Patents
Method of manufacturing a transparent element including transparent electrodesInfo
- Publication number
- SG128592A1 SG128592A1 SG200603964A SG200603964A SG128592A1 SG 128592 A1 SG128592 A1 SG 128592A1 SG 200603964 A SG200603964 A SG 200603964A SG 200603964 A SG200603964 A SG 200603964A SG 128592 A1 SG128592 A1 SG 128592A1
- Authority
- SG
- Singapore
- Prior art keywords
- transparent
- manufacturing
- oxide
- element including
- electrodes
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
- C03C17/2453—Coating containing SnO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
- C03C17/3671—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use as electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/23—Mixtures
- C03C2217/231—In2O3/SnO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/90—Other aspects of coatings
- C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/90—Other aspects of coatings
- C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
- C03C2217/948—Layers comprising indium tin oxide [ITO]
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/154—Deposition methods from the vapour phase by sputtering
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
- C03C2218/328—Partly or completely removing a coating
- C03C2218/33—Partly or completely removing a coating by etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Manufacturing Of Electric Cables (AREA)
- Switches That Are Operated By Magnetic Or Electric Fields (AREA)
- Electroluminescent Light Sources (AREA)
- Manufacture Of Switches (AREA)
- Contacts (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05012998A EP1734587B1 (fr) | 2005-06-16 | 2005-06-16 | Procédé de fabrication d'un élément transparent comprenant des électrodes également transparentes et l'élément correspondant |
Publications (1)
Publication Number | Publication Date |
---|---|
SG128592A1 true SG128592A1 (en) | 2007-01-30 |
Family
ID=36097027
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200603964A SG128592A1 (en) | 2005-06-16 | 2006-06-08 | Method of manufacturing a transparent element including transparent electrodes |
Country Status (11)
Country | Link |
---|---|
US (1) | US7494834B2 (ja) |
EP (1) | EP1734587B1 (ja) |
JP (1) | JP4786427B2 (ja) |
KR (1) | KR101232979B1 (ja) |
CN (1) | CN100557774C (ja) |
AT (1) | ATE416480T1 (ja) |
DE (1) | DE602005011415D1 (ja) |
ES (1) | ES2318382T3 (ja) |
HK (1) | HK1100463A1 (ja) |
SG (1) | SG128592A1 (ja) |
TW (1) | TWI391980B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE416480T1 (de) * | 2005-06-16 | 2008-12-15 | Asulab Sa | Herstellungsverfahren für ein transparentes element mit transparenten elektroden und entsprechendes element |
JP4818216B2 (ja) * | 2007-07-20 | 2011-11-16 | 信越ポリマー株式会社 | 電極シートの製造方法および静電容量型入力装置 |
CN100472290C (zh) * | 2007-08-30 | 2009-03-25 | 深圳和而泰智能控制股份有限公司 | 电容式触摸屏及制作方法 |
JP5591834B2 (ja) * | 2009-03-04 | 2014-09-17 | ナム、ドンシク | タッチパネルセンサー |
GB2472614B (en) * | 2009-08-11 | 2014-11-19 | M Solv Ltd | Capacitive touch panels |
CN101794186A (zh) * | 2010-03-22 | 2010-08-04 | 牧东光电(苏州)有限公司 | 电容触控面板感应层的加工方法 |
WO2014136455A1 (ja) * | 2013-03-07 | 2014-09-12 | 三菱電機株式会社 | 表示装置 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB784673A (en) * | 1956-02-28 | 1957-10-16 | Standard Telephones Cables Ltd | A method of producing printed circuit master drawings |
JPS60260392A (ja) | 1984-06-08 | 1985-12-23 | Semiconductor Energy Lab Co Ltd | 透光性導電膜の光加工方法 |
WO1992013328A1 (en) | 1991-01-17 | 1992-08-06 | Rgb Dynamics | Capacitive touch screen |
JPH11226773A (ja) * | 1998-02-19 | 1999-08-24 | Ricoh Micro Electronics Kk | 導電性膜の加工方法及び装置 |
US6300594B1 (en) | 1998-02-19 | 2001-10-09 | Ricoh Microelectronics Company, Ltd. | Method and apparatus for machining an electrically conductive film |
EP0969517B1 (en) * | 1998-07-04 | 2005-10-12 | International Business Machines Corporation | Electrode for use in electro-optical devices |
US6034813A (en) * | 1998-08-24 | 2000-03-07 | Southwall Technologies, Inc. | Wavelength selective applied films with glare control |
GB9916060D0 (en) * | 1999-07-08 | 1999-09-08 | Isis Innovation | Printed circuit fabrication |
JP2001202826A (ja) * | 2000-01-21 | 2001-07-27 | Gunze Ltd | 透明導電性フィルム |
DE10019888B4 (de) * | 2000-04-20 | 2011-06-16 | Schott Ag | Transparente elektronische Bauelementanordnung und Verfahren zu ihrer Herstellung |
JP2002273582A (ja) * | 2001-03-16 | 2002-09-25 | Ricoh Microelectronics Co Ltd | ビーム加工装置及びタッチパネル基板の製造方法 |
DE60235751D1 (de) * | 2002-08-30 | 2010-05-06 | Asulab Sa | Uhr mit taktiler Ablesung und Betätigung der Zeitinformation |
EP1457865B1 (fr) * | 2003-03-12 | 2017-11-08 | Asulab S.A. | Substrat à électrodes transparent et son procédé de fabrication |
JP4459578B2 (ja) * | 2003-09-08 | 2010-04-28 | 株式会社フジクラ | 色素増感太陽電池 |
KR100818133B1 (ko) * | 2003-10-02 | 2008-03-31 | 가부시키가이샤 도요다 지도숏키 | 전계 발광 소자 |
DE10359156B4 (de) * | 2003-12-16 | 2007-08-30 | Schott Ag | Anzeigevorrichtung |
EP1544178B1 (fr) | 2003-12-16 | 2009-08-12 | Asulab S.A. | Procédé de fabrication d'un élément transparent à électrodes invisibles |
JP2005190768A (ja) * | 2003-12-25 | 2005-07-14 | Toyota Industries Corp | 照明装置 |
DE102004020245A1 (de) * | 2004-04-22 | 2005-12-22 | Schott Ag | Organisches, elektro-optisches Element mit erhöhter Auskoppeleffizienz |
JP4531469B2 (ja) * | 2004-07-15 | 2010-08-25 | 株式会社フジクラ | 静電容量式近接センサ |
WO2006057161A1 (ja) * | 2004-11-29 | 2006-06-01 | Kaneka Corporation | 薄膜光電変換装置用基板、及びそれを備えた薄膜光電変換装置 |
ATE416480T1 (de) * | 2005-06-16 | 2008-12-15 | Asulab Sa | Herstellungsverfahren für ein transparentes element mit transparenten elektroden und entsprechendes element |
US7196262B2 (en) * | 2005-06-20 | 2007-03-27 | Solyndra, Inc. | Bifacial elongated solar cell devices |
US7314773B2 (en) * | 2005-08-17 | 2008-01-01 | The Trustees Of Princeton University | Low resistance thin film organic solar cell electrodes |
US9166197B2 (en) * | 2005-08-29 | 2015-10-20 | The Hong Kong University Of Science And Technology | Metallic anode treated by carbon tetrafluoride plasma for organic light emitting device |
CA2623124C (en) * | 2005-09-23 | 2017-07-04 | The Governors Of The University Of Alberta C/O University Of Alberta | Transparent, conductive film with a large birefringence |
US20070103066A1 (en) * | 2005-11-04 | 2007-05-10 | D Andrade Brian W | Stacked OLEDs with a reflective conductive layer |
US20070159574A1 (en) * | 2006-01-06 | 2007-07-12 | Eastman Kodak Company | Common transparent electrode for reduced voltage displays |
US20080053518A1 (en) * | 2006-09-05 | 2008-03-06 | Pen-Hsiu Chang | Transparent solar cell system |
-
2005
- 2005-06-16 AT AT05012998T patent/ATE416480T1/de not_active IP Right Cessation
- 2005-06-16 EP EP05012998A patent/EP1734587B1/fr active Active
- 2005-06-16 DE DE602005011415T patent/DE602005011415D1/de active Active
- 2005-06-16 ES ES05012998T patent/ES2318382T3/es active Active
-
2006
- 2006-06-07 TW TW095120230A patent/TWI391980B/zh not_active IP Right Cessation
- 2006-06-08 SG SG200603964A patent/SG128592A1/en unknown
- 2006-06-12 JP JP2006161874A patent/JP4786427B2/ja not_active Expired - Fee Related
- 2006-06-15 CN CNB2006100922512A patent/CN100557774C/zh not_active Expired - Fee Related
- 2006-06-15 KR KR1020060053692A patent/KR101232979B1/ko not_active IP Right Cessation
- 2006-06-16 US US11/424,700 patent/US7494834B2/en not_active Expired - Fee Related
-
2007
- 2007-05-29 HK HK07105682.5A patent/HK1100463A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US7494834B2 (en) | 2009-02-24 |
KR101232979B1 (ko) | 2013-02-13 |
JP2006351531A (ja) | 2006-12-28 |
US20060286702A1 (en) | 2006-12-21 |
HK1100463A1 (en) | 2007-09-21 |
CN100557774C (zh) | 2009-11-04 |
EP1734587A1 (fr) | 2006-12-20 |
EP1734587B1 (fr) | 2008-12-03 |
KR20060131663A (ko) | 2006-12-20 |
DE602005011415D1 (de) | 2009-01-15 |
TWI391980B (zh) | 2013-04-01 |
JP4786427B2 (ja) | 2011-10-05 |
TW200717584A (en) | 2007-05-01 |
ES2318382T3 (es) | 2009-05-01 |
CN1881536A (zh) | 2006-12-20 |
ATE416480T1 (de) | 2008-12-15 |
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