WO2003070846A2 - Drying resist with a solvent bath and supercritical co2 - Google Patents

Drying resist with a solvent bath and supercritical co2 Download PDF

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Publication number
WO2003070846A2
WO2003070846A2 PCT/US2003/004698 US0304698W WO03070846A2 WO 2003070846 A2 WO2003070846 A2 WO 2003070846A2 US 0304698 W US0304698 W US 0304698W WO 03070846 A2 WO03070846 A2 WO 03070846A2
Authority
WO
WIPO (PCT)
Prior art keywords
solvent
polymeric film
force
density
bath
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2003/004698
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English (en)
French (fr)
Other versions
WO2003070846A3 (en
Inventor
Chantal J. Arena-Foster
Allan Wendell Awtrey
Nicholas Alan Ryza
Paul Shilling
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Supercritical Systems Inc
Original Assignee
Supercritical Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Supercritical Systems Inc filed Critical Supercritical Systems Inc
Priority to JP2003569749A priority Critical patent/JP2006508521A/ja
Priority to EP03713498A priority patent/EP1474723A2/en
Priority to AU2003217547A priority patent/AU2003217547A1/en
Publication of WO2003070846A2 publication Critical patent/WO2003070846A2/en
Publication of WO2003070846A3 publication Critical patent/WO2003070846A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/11—Treatments for avoiding stiction of elastic or moving parts of MEMS
    • B81C2201/117—Using supercritical fluid, e.g. carbon dioxide, for removing sacrificial layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Definitions

  • the present invention relates to the field of drying a polymeric film. More particularly, the present invention relates to the field of drying photoresist, without pattern collapse or deformation, using a solvent bath and supercritical carbon dioxide.
  • Fabrication of integrated circuits includes the formation of patterned layers on a semiconductor wafer that form electrically active regions in and on the wafer surface.
  • a masking process referred to as photolithography or photomasking is used to transfer a pattern onto the wafer.
  • Masking involves applying a photoreactive polymer or photoresist onto the wafer by any suitable means such as by spinning of the wafer to distribute liquid photoresist uniformly on its surface. In a typical semiconductor manufacturing process, several iterations of the masking process are employed. Layers of either positive or negative photoresist can be used in various combinations on the same wafer.
  • the wafer is heated or "soft baked” such as on a hot plate to improve adhesion of the photoresist to the substrate surface.
  • a photo aligner aligns the wafer to the photomask and then portions of the photoresist coated wafer are exposed to high-energy light so that a pattern is formed as a latent image in the photoresist layer.
  • a developing agent is then applied to develop the portions of the photoresist which were exposed.
  • positive resist is used, the developed portions of the resist are solubilized by the exposure to high- energy light.
  • negative resist the undeveloped portions of the resist are solubilized. Washing and rinsing steps are carried out that selectively remove the solubilized photoresist.
  • a drying step is carried out.
  • the collapse of high-aspect-ratio photoresist structures is related to the surface tension of the rinse solution (capillary forces scale with the surface tension of the rinse solution) and is a function of both the density (spacing) and aspect ratio of resist lines. This becomes an increasingly serious problem as device feature sizes continue to shrink while relative vertical height increases to accommodate more complex interconnect structures.
  • collapse of photoresist structures is a generic term that refers to the deformation (bending), fracture, and/or peeling of resist from the substrate, in response to capillary forces present during the drying stage of a lithographic process.
  • D. Goldfarb et. al Aqueous-Based Photoresist Drying Using Supercritical Carbon Dioxide to Prevent Pattern Collapse, J. Vacuum Sci.
  • Supercritical fluids are characterized by high solvating and solubilizing properties that are typically associated with compositions in the liquid state. Supercritical fluids also have a low viscosity that is characteristic of compositions in the gaseous state.
  • the conventional supercritical fluid drying methods commonly employ alcohol, e.g., ethanol, for rinsing.
  • the ethanol rinse liquid can be directly replaced with carbon dioxide (CO 2 ).
  • CO 2 carbon dioxide
  • a strategy of using conventional supercritical fluid drying methods to dry resist patterns would have to overcome the additional problem of water contamination.
  • resist systems are designed to employ aqueous-based developers and, for some resist systems, water is used for rinsing, for example, after development in an aqueous solution of tetramethyl ammonium hydroxide (TMAH).
  • TMAH tetramethyl ammonium hydroxide
  • polar organic compounds such as ethanol employed in conventional supercritical drying can not be used to dry water-rinsed resists because they dissolve the resist.
  • water is used for rinsing, e.g., for resists developed in an aqueous solution of TMAH
  • the presence of moisture in the atmosphere can not be avoided. This presents a serious problem because moisture in the atmosphere can cause acrylate-type resist to swell and pattern deformation can occur.
  • the impetus for the recent explorations of supercritical fluid to dry resist patterns is the philosophy that pattern collapse can be minimized by reducing the surface tension of the rinse solution. It is commonly known that one of the mechanisms of pattern collapse is the presence of capillary forces. Moreover, it is known that capillary forces scale with the surface tension of the rinse solution.
  • decreases in the surface tension relate to decreases in the capillary force acting on the resist walls.
  • n- hexane a solution of n- hexane, a CO 2 -philic liquid (in terms of their solubility in CO 2 , polymers have been classified as CO 2 -philic and CO 2 -phobic) and a surfactant, sorbitan fatty acid ether, first replaces the water and, in turn, is replaced with liquid CO 2 before supercritical resist drying (SRD) is performed.
  • SRD supercritical resist drying
  • the water is replaced directly with the liquid CO 2 containing a surfactant, fluoroether carboxylate, which makes water miscible in CO 2 , and then SRD is performed.
  • a surfactant fluoroether carboxylate
  • SRD SRD is performed.
  • One disadvantage of the supercritical resist drying methods set forth in Namatsu is that their effectiveness is based on the use of a surfactant to enable rinse water to be replaced with CO 2 before the drying step is carried out, resulting in additional chemicals other than CO 2 needed for the process.
  • Certain surfactants can dissolve the resist patterns, while various other surfactants can result in the formation of a haze on the surface of the photoresist.
  • a first embodiment of the present invention is for a method of drying an object, having a polymeric film, wherein the object is submerged in a rinse liquid.
  • the object is removed from the rinse liquid and the object is placed in a solvent bath before a sufficient amount of the rinse liquid can evaporate from the object.
  • the density of a solvent in the solvent bath depends on a direction of orientation of the polymeric film with respect to a force (e.g., force of gravity or centripetal force).
  • the object is removed from the solvent bath.
  • a drying process is performed.
  • a second embodiment of the invention is for a method of drying an object having a polymeric film.
  • a sufficient quantity of rinse liquid is maintained on top of the polymeric film while moving the object from a rinse bath to a solvent bath.
  • the object is placed in the solvent bath.
  • the density of a solvent in the solvent bath depends on a direction of orientation of the polymeric film with respect to a force.
  • the object is removed from the solvent bath.
  • a supercritical fluid drying process
  • a third embodiment is for an apparatus for drying an object having a polymeric film including: a rinse bath; a solvent bath; means for maintaining a sufficient quantity of rinse liquid on top of the polymeric film while moving the object from the rinse bath to the solvent bath; means for placing the object in the solvent bath; means for removing the object from the solvent bath; and means for performing a supercritical fluid drying process.
  • FIG. 1 is a flow chart showing a process flow for a method of drying an object having a polymeric film, wherein the object is submerged in a rinse liquid, in accordance with the present invention.
  • FIG. 2 is a flow chart showing a process flow for a method drying an object having a polymeric film in accordance with the present invention.
  • FIG. 3 is a schematic illustration of an apparatus for drying an object having a polymeric film in accordance with the present invention.
  • the present invention is directed to a process of drying an object having a polymeric film, such as a semiconductor substrate or wafer that has been fabricated in accordance with methods well known in the art of manufacturing semiconductor devices.
  • the methods and apparatus in accordance with the present invention utilize the low viscosity and high solvating and solubilizing properties of supercritical carbon dioxide to assist in the cleaning process.
  • carbon dioxide should be understood to refer to carbon dioxide (CO 2 ) employed as a fluid in a liquid, gaseous or supercritical (including near- supercritical) state.
  • “Liquid carbon dioxide” refers to CO 2 at vapor-liquid equilibrium conditions. If liquid CO 2 is used, the temperature employed is preferably below 31.1 ° C.
  • Supercritical carbon dioxide refers herein to CO 2 at conditions above the critical temperature (31.1° C) and critical pressure (1070.4 psi). When CO 2 is subjected to temperatures and pressures above 31° C and 1070.4 psi, respectively, it is determined to be in the supercritical state. "Near-supercritical carbon dioxide” refers to CO 2 within about 85% of absolute critical temperature and critical pressure.
  • Various objects can be dried using the processes of the present invention such as semiconductor wafers, substrates, and other media requiring photoresist drying. The present invention, though applicable to the semiconductor industry, is not limited thereto. For the purposes of the invention, “drying” should be understood to be consistent with its conventional meaning in the art.
  • substrate includes a wide variety of structures such as semiconductor device structures with a deposited photoresist.
  • a substrate can be a single layer of material, such as a silicon wafer, or can include any number of layers.
  • a substrate can be comprised of various materials, including metals, ceramics, glass, or compositions thereof.
  • FIG. 1 is a flow chart showing a process flow (10) for a method of drying an object having a polymeric film, wherein the object is submerged in a rinse liquid.
  • object includes: a substrate consisting of metals, ceramics, glass, and composite mixtures thereof; a semiconductor wafer for forming integrated circuits; and other objects requiring photoresist drying. It should be appreciated that the surface of the object, or at least a portion thereof, is coated with a polymeric film such as photoresist.
  • the object is removed from the rinse liquid and placed in a solvent bath before a sufficient amount of the rinse liquid can evaporate from the object (20). It should be understood that "before a sufficient amount of the rinse liquid can evaporate from the object” means before the process of evaporation results in capillary forces that exert a net force on the pattern that deforms the resist lines.
  • the rinse liquid is water.
  • the density of the solvent depends on the direction of orientation of the polymeric film with respect to a force, such as the force of gravity.
  • a force such as the force of gravity.
  • the object being dried can be placed into a centrifuge and force is a combination of gravity and a centripetal force.
  • a solvent is selected such that the density of the solvent is greater than the density of the rinse liquid.
  • a solvent is selected such that the density of the solvent is less than the density of the rinse liquid.
  • the solvent includes a co-solvent and/or a surfactant.
  • co-solvents that can be used in the present invention include, but are not limited to, aliphatic and aromatic hydrocarbons, and esters and ethers thereof, particularly mono and di-esters and ethers, alkyl and dialkyl carbonates, alkylene and polyalkylene glycols, and ethers and esters thereof, lactones, alcohols and diols, polydimethylsiloxanes, DMSO, and DMF.
  • surfactants that can be used in the invention include, but are not limited to, anionic, cationic, nonionic, fluorinated and non-fluorinated surfactants.
  • the object is removed from the solvent bath (30) and a drying process is performed (40).
  • the drying process is a supercritical fluid drying process.
  • the surface tension vanishes in the supercritical phase, which means that capillary forces are zero in the supercritical phase.
  • carbon dioxide is used as the fluid in the supercritical fluid drying process.
  • the advantages of using carbon dioxide in the supercritical fluid drying process include that the critical point is relatively low, it is relatively inexpensive, is nontoxic, is chemically inert to various photoresists, and can solubilize organic solvents at moderate pressures.
  • FIG. 2 is a flow chart showing a process flow (100) for a method of drying an object having a polymeric film.
  • a sufficient quantity of rinse liquid is maintained on top of the polymeric film while moving the object from a rinse bath to a solvent bath (200).
  • a sufficient quantity of rinse liquid means a quantity of rinse liquid such that evaporation of the rinse liquid, while moving the object from a rinse bath to a solvent bath, does not result in capillary forces of sufficient magnitude to deform the resist lines.
  • the rinse liquid is water.
  • the density of the solvent depends on the direction of orientation of the polymeric film with respect to a force, such as force of gravity or centripetal force.
  • a solvent is selected such that the density of the solvent is greater than the density of the rinse liquid.
  • a solvent is selected such that the density of the solvent is less than the density of the rinse liquid.
  • the object is removed from the solvent bath (350) and a supercritical fluid drying process is performed (400).
  • FIG. 3 is a schematic illustration of an apparatus for drying an object having a polymeric film, that includes both a rinse bath (500) and a solvent bath (700). There is means for removing the object (550) from the rinse bath (500), such as a robotic arm or operator using a wafer wand. A means for maintaining a sufficient quantity of rinse liquid on top of the polymeric film while moving the object (600) from the rinse bath (500) to the solvent bath.
  • means (700), such as a rinse liquid flow, is provided.
  • There is means for placing the object (650) in the solvent bath (700) such as a robotic arm or operator using a wafer wand.
  • means (550), (650) and (750), although depicted as separate means in FIG. 3, can be the same means, such as the same robotic arm or operator using a wafer wand.
  • a means for performing a supercritical fluid drying process such as a pressure chamber, is provided.
  • a pressure chamber for supercritical processing is disclosed in co-owned and co-pending United States Patent Applications, Serial No. 09/912,844, entitled "HIGH PRESSURE PROCESSING

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
PCT/US2003/004698 2002-02-15 2003-02-14 Drying resist with a solvent bath and supercritical co2 Ceased WO2003070846A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003569749A JP2006508521A (ja) 2002-02-15 2003-02-14 溶剤浴と超臨界ｃｏ２を用いたレジストの乾燥
EP03713498A EP1474723A2 (en) 2002-02-15 2003-02-14 DRYING RESIST WITH A SOLVENT BATH AND SUPERCRITICAL CO sb 2 /sb
AU2003217547A AU2003217547A1 (en) 2002-02-15 2003-02-14 Drying resist with a solvent bath and supercritical co2

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US35775602P 2002-02-15 2002-02-15
US60/357,756 2002-02-15
US35862202P 2002-02-20 2002-02-20
US60/358,622 2002-02-20

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WO2003070846A2 true WO2003070846A2 (en) 2003-08-28
WO2003070846A3 WO2003070846A3 (en) 2003-11-27

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US (1) US6928746B2 (enExample)
EP (1) EP1474723A2 (enExample)
JP (1) JP2006508521A (enExample)
AU (1) AU2003217547A1 (enExample)
WO (1) WO2003070846A2 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030183251A1 (en) * 2001-04-24 2003-10-02 Kabushiski Kaisha Kobe Seiko Sho Process for drying an object having microstructure and the object obtained by the same
US7011716B2 (en) * 2003-04-29 2006-03-14 Advanced Technology Materials, Inc. Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products
JP2004233954A (ja) * 2002-12-02 2004-08-19 Tokyo Ohka Kogyo Co Ltd レジストパターン形成方法およびレジストパターン
US7049053B2 (en) * 2003-06-11 2006-05-23 Intel Corporation Supercritical carbon dioxide to reduce line edge roughness
US7250374B2 (en) 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing
KR20060017414A (ko) * 2004-08-20 2006-02-23 삼성에스디아이 주식회사 유기 전계 발광 소자의 제조 방법
KR20060020044A (ko) * 2004-08-30 2006-03-06 삼성에스디아이 주식회사 유기전계발광표시장치 및 도너 기판의 제조방법
US7307019B2 (en) 2004-09-29 2007-12-11 Tokyo Electron Limited Method for supercritical carbon dioxide processing of fluoro-carbon films
US7491036B2 (en) 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
US7008853B1 (en) * 2005-02-25 2006-03-07 Infineon Technologies, Ag Method and system for fabricating free-standing nanostructures
JP4237184B2 (ja) * 2005-03-31 2009-03-11 エルピーダメモリ株式会社 半導体装置の製造方法
US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
DE102008048540A1 (de) * 2008-09-15 2010-04-15 Gebr. Schmid Gmbh & Co. Verfahren zur Behandlung von Substraten, Substrat und Behandlungseinrichtung zur Durchführung des Verfahrens
JP5426439B2 (ja) * 2010-03-15 2014-02-26 株式会社東芝 超臨界乾燥方法および超臨界乾燥装置
JP5477131B2 (ja) * 2010-04-08 2014-04-23 東京エレクトロン株式会社 基板処理装置
JP5620234B2 (ja) * 2010-11-15 2014-11-05 株式会社東芝 半導体基板の超臨界乾燥方法および基板処理装置
DE102014100005B4 (de) 2013-05-29 2024-08-14 Amo Gmbh Beschichtung aus Resist auf ein Substrat für ultrahochauflösende Lithographie
US12460863B2 (en) * 2022-05-26 2025-11-04 Semes Co., Ltd. Apparatus for treating a substrate

Family Cites Families (245)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2439689A (en) 1948-04-13 Method of rendering glass
US2617719A (en) 1950-12-29 1952-11-11 Stanolind Oil & Gas Co Cleaning porous media
US3642020A (en) 1969-11-17 1972-02-15 Cameron Iron Works Inc Pressure operated{13 positive displacement shuttle valve
FR2128426B1 (enExample) 1971-03-02 1980-03-07 Cnen
US3890176A (en) 1972-08-18 1975-06-17 Gen Electric Method for removing photoresist from substrate
US4341592A (en) 1975-08-04 1982-07-27 Texas Instruments Incorporated Method for removing photoresist layer from substrate by ozone treatment
US4219333A (en) 1978-07-03 1980-08-26 Harris Robert D Carbonated cleaning solution
US4349415A (en) 1979-09-28 1982-09-14 Critical Fluid Systems, Inc. Process for separating organic liquid solutes from their solvent mixtures
JPS5919267A (ja) 1982-07-20 1984-01-31 Matsushita Electric Ind Co Ltd 自動選曲プレ−ヤの曲間検出回路
US4475993A (en) 1983-08-15 1984-10-09 The United States Of America As Represented By The United States Department Of Energy Extraction of trace metals from fly ash
US4877530A (en) 1984-04-25 1989-10-31 Cf Systems Corporation Liquid CO2 /cosolvent extraction
JPS60192333U (ja) 1984-05-31 1985-12-20 日本メクトロン株式会社 キ−ボ−ドスイツチ
US4749440A (en) 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
US4925790A (en) 1985-08-30 1990-05-15 The Regents Of The University Of California Method of producing products by enzyme-catalyzed reactions in supercritical fluids
US4759917A (en) 1987-02-24 1988-07-26 Monsanto Company Oxidative dissolution of gallium arsenide and separation of gallium from arsenic
US4879004A (en) 1987-05-07 1989-11-07 Micafil Ag Process for the extraction of oil or polychlorinated biphenyl from electrical parts through the use of solvents and for distillation of the solvents
DE3725565A1 (de) 1987-08-01 1989-02-16 Peter Weil Verfahren und anlage zum entlacken von gegenstaenden mit einem tauchbehaelter mit loesungsmittel
DE3725611A1 (de) 1987-08-01 1989-02-09 Henkel Kgaa Verfahren zur gemeinsamen abtrennung von stoerelementen aus wertmetall-elektrolytloesungen
US5105556A (en) 1987-08-12 1992-04-21 Hitachi, Ltd. Vapor washing process and apparatus
US4838476A (en) 1987-11-12 1989-06-13 Fluocon Technologies Inc. Vapour phase treatment process and apparatus
US4933404A (en) 1987-11-27 1990-06-12 Battelle Memorial Institute Processes for microemulsion polymerization employing novel microemulsion systems
EP0343233B1 (en) 1987-11-27 1994-02-02 Battelle Memorial Institute Supercritical fluid reverse micelle separation
US5266205A (en) 1988-02-04 1993-11-30 Battelle Memorial Institute Supercritical fluid reverse micelle separation
JP2663483B2 (ja) 1988-02-29 1997-10-15 勝 西川 レジストパターン形成方法
JPH01246835A (ja) 1988-03-29 1989-10-02 Toshiba Corp ウエハ処理装置
US5185296A (en) 1988-07-26 1993-02-09 Matsushita Electric Industrial Co., Ltd. Method for forming a dielectric thin film or its pattern of high accuracy on a substrate
DE3836731A1 (de) 1988-10-28 1990-05-03 Henkel Kgaa Verfahren zur abtrennung von stoerelementen aus wertmetall-elektrolytloesungen
US5013366A (en) 1988-12-07 1991-05-07 Hughes Aircraft Company Cleaning process using phase shifting of dense phase gases
JPH02209729A (ja) 1989-02-09 1990-08-21 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及び異物除去装置
DE4004111C2 (de) 1989-02-15 1999-08-19 Deutsches Textilforschzentrum Verfahren zur Vorbehandlung von textilen Flächengebilden oder Garnen
DE3904514C2 (de) 1989-02-15 1999-03-11 Oeffentliche Pruefstelle Und T Verfahren zum Reinigen bzw. Waschen von Bekleidungsteilen o. dgl.
EP0409972B1 (en) 1989-02-16 1992-10-21 PAWLISZYN, Janusz B. Apparatus and method for delivering supercritical fluid
DE3906724C2 (de) 1989-03-03 1998-03-12 Deutsches Textilforschzentrum Verfahren zum Färben von textilen Substraten
DE3906737A1 (de) 1989-03-03 1990-09-13 Deutsches Textilforschzentrum Verfahren zum mercerisieren, laugieren oder abkochen
DE3906735C2 (de) 1989-03-03 1999-04-15 Deutsches Textilforschzentrum Verfahren zum Bleichen
US5068040A (en) 1989-04-03 1991-11-26 Hughes Aircraft Company Dense phase gas photochemical process for substrate treatment
US5288333A (en) 1989-05-06 1994-02-22 Dainippon Screen Mfg. Co., Ltd. Wafer cleaning method and apparatus therefore
DE3915586A1 (de) 1989-05-12 1990-11-15 Henkel Kgaa Verfahren zur zweiphasen-extraktion von metallionen aus feste metalloxide enthaltenden phasen, mittel und verwendung
JPH02304941A (ja) 1989-05-19 1990-12-18 Seiko Epson Corp 半導体装置の製造方法
US4923828A (en) 1989-07-07 1990-05-08 Eastman Kodak Company Gaseous cleaning method for silicon devices
JP2888253B2 (ja) 1989-07-20 1999-05-10 富士通株式会社 化学気相成長法およびその実施のための装置
US5213619A (en) 1989-11-30 1993-05-25 Jackson David P Processes for cleaning, sterilizing, and implanting materials using high energy dense fluids
US5196134A (en) 1989-12-20 1993-03-23 Hughes Aircraft Company Peroxide composition for removing organic contaminants and method of using same
US5269850A (en) 1989-12-20 1993-12-14 Hughes Aircraft Company Method of removing organic flux using peroxide composition
US5370741A (en) 1990-05-15 1994-12-06 Semitool, Inc. Dynamic semiconductor wafer processing using homogeneous chemical vapors
US5071485A (en) 1990-09-11 1991-12-10 Fusion Systems Corporation Method for photoresist stripping using reverse flow
US5279771A (en) 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
JP2782560B2 (ja) 1990-12-12 1998-08-06 富士写真フイルム株式会社 安定化処理液及びハロゲン化銀カラー写真感光材料の処理方法
US5306350A (en) 1990-12-21 1994-04-26 Union Carbide Chemicals & Plastics Technology Corporation Methods for cleaning apparatus using compressed fluids
CA2059841A1 (en) 1991-01-24 1992-07-25 Ichiro Hayashida Surface treating solutions and cleaning method
US5185058A (en) 1991-01-29 1993-02-09 Micron Technology, Inc. Process for etching semiconductor devices
US5201960A (en) 1991-02-04 1993-04-13 Applied Photonics Research, Inc. Method for removing photoresist and other adherent materials from substrates
AT395951B (de) 1991-02-19 1993-04-26 Union Ind Compr Gase Gmbh Reinigung von werkstuecken mit organischen rueckstaenden
EP0514337B1 (de) 1991-05-17 1995-11-22 Ciba-Geigy Ag Verfahren zum Färben von hydrophobem Textilmaterial mit Dispersionsfarbstoffen aus überkritischem CO2
US5225173A (en) 1991-06-12 1993-07-06 Idaho Research Foundation, Inc. Methods and devices for the separation of radioactive rare earth metal isotopes from their alkaline earth metal precursors
US5274129A (en) 1991-06-12 1993-12-28 Idaho Research Foundation, Inc. Hydroxamic acid crown ethers
US5730874A (en) 1991-06-12 1998-03-24 Idaho Research Foundation, Inc. Extraction of metals using supercritical fluid and chelate forming legand
US5965025A (en) 1991-06-12 1999-10-12 Idaho Research Foundation, Inc. Fluid extraction
US5356538A (en) 1991-06-12 1994-10-18 Idaho Research Foundation, Inc. Supercritical fluid extraction
US5279615A (en) 1991-06-14 1994-01-18 The Clorox Company Method and composition using densified carbon dioxide and cleaning adjunct to clean fabrics
US5174917A (en) 1991-07-19 1992-12-29 Monsanto Company Compositions containing n-ethyl hydroxamic acid chelants
US5320742A (en) 1991-08-15 1994-06-14 Mobil Oil Corporation Gasoline upgrading process
US5431843A (en) 1991-09-04 1995-07-11 The Clorox Company Cleaning through perhydrolysis conducted in dense fluid medium
GB2259525B (en) 1991-09-11 1995-06-28 Ciba Geigy Ag Process for dyeing cellulosic textile material with disperse dyes
US5213622A (en) 1991-10-11 1993-05-25 Air Products And Chemicals, Inc. Cleaning agents for fabricating integrated circuits and a process for using the same
EP0543779A1 (de) 1991-11-20 1993-05-26 Ciba-Geigy Ag Verfahren zum optischen Aufhellen von hydrophobem Textilmaterial mit dispersen optischen Aufhellern in überkritischem CO2
KR930019861A (ko) 1991-12-12 1993-10-19 완다 케이. 덴슨-로우 조밀상 기체를 이용한 코팅 방법
US5550211A (en) 1991-12-18 1996-08-27 Schering Corporation Method for removing residual additives from elastomeric articles
DE4200352A1 (de) 1992-01-09 1993-08-19 Deutsches Textilforschzentrum Verfahren zum aufbringen von substanzen auf fasermaterialien und textile substrate
DE4200498A1 (de) 1992-01-10 1993-07-15 Amann & Soehne Verfahren zum auftragen einer avivage
US5474812A (en) 1992-01-10 1995-12-12 Amann & Sohne Gmbh & Co. Method for the application of a lubricant on a sewing yarn
US5688879A (en) 1992-03-27 1997-11-18 The University Of North Carolina At Chapel Hill Method of making fluoropolymers
DE69334213T2 (de) 1992-03-27 2009-06-18 University Of North Carolina At Chapel Hill Verfahren zur Herstellung von Fluoropolymeren
US5271839A (en) * 1992-04-14 1993-12-21 Millipore Corporation Patterned porous polymeric product and process
JPH06105684B2 (ja) * 1992-05-13 1994-12-21 株式会社ソルテック レジストパターン形成方法
JPH05326392A (ja) * 1992-05-14 1993-12-10 Fujitsu Ltd 半導体装置の製造方法
US5313965A (en) 1992-06-01 1994-05-24 Hughes Aircraft Company Continuous operation supercritical fluid treatment process and system
JPH0613361A (ja) 1992-06-26 1994-01-21 Tokyo Electron Ltd 処理装置
US6165282A (en) 1992-06-30 2000-12-26 Southwest Research Institute Method for contaminant removal using natural convection flow and changes in solubility concentration by temperature
US5401322A (en) 1992-06-30 1995-03-28 Southwest Research Institute Apparatus and method for cleaning articles utilizing supercritical and near supercritical fluids
US5352327A (en) 1992-07-10 1994-10-04 Harris Corporation Reduced temperature suppression of volatilization of photoexcited halogen reaction products from surface of silicon wafer
US5370742A (en) 1992-07-13 1994-12-06 The Clorox Company Liquid/supercritical cleaning with decreased polymer damage
US5285352A (en) 1992-07-15 1994-02-08 Motorola, Inc. Pad array semiconductor device with thermal conductor and process for making the same
US5316591A (en) 1992-08-10 1994-05-31 Hughes Aircraft Company Cleaning by cavitation in liquefied gas
US5456759A (en) 1992-08-10 1995-10-10 Hughes Aircraft Company Method using megasonic energy in liquefied gases
US5261965A (en) 1992-08-28 1993-11-16 Texas Instruments Incorporated Semiconductor wafer cleaning using condensed-phase processing
EP0591595A1 (en) 1992-10-08 1994-04-13 International Business Machines Corporation Molecular recording/reproducing method and recording medium
US5294261A (en) 1992-11-02 1994-03-15 Air Products And Chemicals, Inc. Surface cleaning using an argon or nitrogen aerosol
US5328722A (en) 1992-11-06 1994-07-12 Applied Materials, Inc. Metal chemical vapor deposition process using a shadow ring
US5514220A (en) 1992-12-09 1996-05-07 Wetmore; Paula M. Pressure pulse cleaning
WO1994014240A1 (en) 1992-12-11 1994-06-23 The Regents Of The University Of California Microelectromechanical signal processors
NZ260144A (en) 1993-04-12 1995-10-26 Colgate Palmolive Co Cleaning composition; contains three liquid phases which merge at a tricritical point; use for removing tar or grease from articles
US5403665A (en) 1993-06-18 1995-04-04 Regents Of The University Of California Method of applying a monolayer lubricant to micromachines
JPH07142333A (ja) 1993-06-29 1995-06-02 Kawasaki Steel Corp レジストの現像・リンス方法及びその装置
US5312882A (en) 1993-07-30 1994-05-17 The University Of North Carolina At Chapel Hill Heterogeneous polymerization in carbon dioxide
JP3338134B2 (ja) 1993-08-02 2002-10-28 株式会社東芝 半導体ウエハ処理方法
US5364497A (en) 1993-08-04 1994-11-15 Analog Devices, Inc. Method for fabricating microstructures using temporary bridges
DE4429470A1 (de) 1993-08-23 1995-03-02 Ciba Geigy Ag Verfahren zur Verbesserung der Stabilität von Färbungen auf hydrophoben Textilmaterial
US5370740A (en) 1993-10-01 1994-12-06 Hughes Aircraft Company Chemical decomposition by sonication in liquid carbon dioxide
US5656097A (en) 1993-10-20 1997-08-12 Verteq, Inc. Semiconductor wafer cleaning system
US5417768A (en) 1993-12-14 1995-05-23 Autoclave Engineers, Inc. Method of cleaning workpiece with solvent and then with liquid carbon dioxide
DE4344021B4 (de) 1993-12-23 2006-06-29 Deutsches Textilforschungszentrum Nord-West E.V. Färbung von beschlichteten textilen Flächengebilden aus Synthesefasermaterial in überkritischem Medien
TW274630B (enExample) 1994-01-28 1996-04-21 Wako Zunyaku Kogyo Kk
JP3394310B2 (ja) * 1994-02-10 2003-04-07 株式会社日立製作所 パターン形成方法
US5872257A (en) 1994-04-01 1999-02-16 University Of Pittsburgh Further extractions of metals in carbon dioxide and chelating agents therefor
US5641887A (en) 1994-04-01 1997-06-24 University Of Pittsburgh Extraction of metals in carbon dioxide and chelating agents therefor
DE69523208T2 (de) 1994-04-08 2002-06-27 Texas Instruments Inc., Dallas Verfahren zur Reinigung von Halbleiterscheiben mittels verflüssigter Gase
JP3320549B2 (ja) 1994-04-26 2002-09-03 岩手東芝エレクトロニクス株式会社 被膜除去方法および被膜除去剤
US5467492A (en) 1994-04-29 1995-11-21 Hughes Aircraft Company Dry-cleaning of garments using liquid carbon dioxide under agitation as cleaning medium
KR0137841B1 (ko) 1994-06-07 1998-04-27 문정환 식각잔류물 제거방법
US5482564A (en) 1994-06-21 1996-01-09 Texas Instruments Incorporated Method of unsticking components of micro-mechanical devices
US5504042A (en) 1994-06-23 1996-04-02 Texas Instruments Incorporated Porous dielectric material with improved pore surface properties for electronics applications
US5637151A (en) 1994-06-27 1997-06-10 Siemens Components, Inc. Method for reducing metal contamination of silicon wafers during semiconductor manufacturing
US5522938A (en) 1994-08-08 1996-06-04 Texas Instruments Incorporated Particle removal in supercritical liquids using single frequency acoustic waves
US5501761A (en) 1994-10-18 1996-03-26 At&T Corp. Method for stripping conformal coatings from circuit boards
EP0711864B1 (en) 1994-11-08 2001-06-13 Raytheon Company Dry-cleaning of garments using gas-jet agitation
JPH08186140A (ja) 1994-12-27 1996-07-16 Toshiba Corp 樹脂封止型半導体装置の製造方法および製造装置
US5629918A (en) 1995-01-20 1997-05-13 The Regents Of The University Of California Electromagnetically actuated micromachined flap
DE69610652T2 (de) 1995-01-26 2001-05-10 Texas Instruments Inc., Dallas Verfahren zur Entfernung von Oberflächenkontamination
JPH08222508A (ja) 1995-02-15 1996-08-30 Fuji Photo Film Co Ltd 感光性組成物のパターン形成方法
JP3277114B2 (ja) 1995-02-17 2002-04-22 インターナショナル・ビジネス・マシーンズ・コーポレーション 陰画調レジスト像の作製方法
EP0727711A3 (en) 1995-02-17 1997-04-09 Ocg Microelectronic Materials Photoresist compositions containing supercritical fluid fractionated polymeric resin binders
DE19506404C1 (de) 1995-02-23 1996-03-14 Siemens Ag Verfahren zum Freiätzen (Separieren) und Trocknen mikromechanischer Komponenten
WO1996027704A1 (en) 1995-03-06 1996-09-12 Unilever N.V. Dry cleaning system using densified carbon dioxide and a surfactant adjunct
US5683977A (en) 1995-03-06 1997-11-04 Lever Brothers Company, Division Of Conopco, Inc. Dry cleaning system using densified carbon dioxide and a surfactant adjunct
US5676705A (en) 1995-03-06 1997-10-14 Lever Brothers Company, Division Of Conopco, Inc. Method of dry cleaning fabrics using densified carbon dioxide
US5681398A (en) 1995-03-17 1997-10-28 Purex Co., Ltd. Silicone wafer cleaning method
JPH08264500A (ja) 1995-03-27 1996-10-11 Sony Corp 基板の洗浄方法
JPH08330266A (ja) 1995-05-31 1996-12-13 Texas Instr Inc <Ti> 半導体装置等の表面を浄化し、処理する方法
US5653045A (en) * 1995-06-07 1997-08-05 Ferrell; Gary W. Method and apparatus for drying parts and microelectronic components using sonic created mist
US6454945B1 (en) 1995-06-16 2002-09-24 University Of Washington Microfabricated devices and methods
WO1997000442A1 (en) 1995-06-16 1997-01-03 The University Of Washington Microfabricated differential extraction device and method
JP2875193B2 (ja) * 1995-09-13 1999-03-24 株式会社ソルテック レジストパターン形成方法
US6239038B1 (en) 1995-10-13 2001-05-29 Ziying Wen Method for chemical processing semiconductor wafers
US5783082A (en) 1995-11-03 1998-07-21 University Of North Carolina Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants
US6037277A (en) 1995-11-16 2000-03-14 Texas Instruments Incorporated Limited-volume apparatus and method for forming thin film aerogels on semiconductor substrates
US5955140A (en) 1995-11-16 1999-09-21 Texas Instruments Incorporated Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates
US5736425A (en) 1995-11-16 1998-04-07 Texas Instruments Incorporated Glycol-based method for forming a thin-film nanoporous dielectric
US5807607A (en) 1995-11-16 1998-09-15 Texas Instruments Incorporated Polyol-based method for forming thin film aerogels on semiconductor substrates
US6380105B1 (en) 1996-11-14 2002-04-30 Texas Instruments Incorporated Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates
US5679169A (en) 1995-12-19 1997-10-21 Micron Technology, Inc. Method for post chemical-mechanical planarization cleaning of semiconductor wafers
US5992680A (en) 1996-01-29 1999-11-30 Smith; Philip E. Slidable sealing lid apparatus for subsurface storage containers
US6232417B1 (en) 1996-03-07 2001-05-15 The B. F. Goodrich Company Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
US5804607A (en) 1996-03-21 1998-09-08 International Business Machines Corporation Process for making a foamed elastomeric polymer
US5726211A (en) 1996-03-21 1998-03-10 International Business Machines Corporation Process for making a foamed elastometric polymer
US5766367A (en) 1996-05-14 1998-06-16 Sandia Corporation Method for preventing micromechanical structures from adhering to another object
US5868856A (en) * 1996-07-25 1999-02-09 Texas Instruments Incorporated Method for removing inorganic contamination by chemical derivitization and extraction
US5868862A (en) 1996-08-01 1999-02-09 Texas Instruments Incorporated Method of removing inorganic contamination by chemical alteration and extraction in a supercritical fluid media
US6270948B1 (en) 1996-08-22 2001-08-07 Kabushiki Kaisha Toshiba Method of forming pattern
US5798438A (en) 1996-09-09 1998-08-25 University Of Massachusetts Polymers with increased order
US5881577A (en) 1996-09-09 1999-03-16 Air Liquide America Corporation Pressure-swing absorption based cleaning methods and systems
US5908510A (en) 1996-10-16 1999-06-01 International Business Machines Corporation Residue removal by supercritical fluids
US5928389A (en) 1996-10-21 1999-07-27 Applied Materials, Inc. Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool
US5797719A (en) 1996-10-30 1998-08-25 Supercritical Fluid Technologies, Inc. Precision high pressure control assembly
US5888050A (en) 1996-10-30 1999-03-30 Supercritical Fluid Technologies, Inc. Precision high pressure control assembly
US5725987A (en) 1996-11-01 1998-03-10 Xerox Corporation Supercritical processes
US5714299A (en) 1996-11-04 1998-02-03 Xerox Corporation Processes for toner additives with liquid carbon dioxide
JP3916717B2 (ja) * 1997-01-14 2007-05-23 三井・デュポンフロロケミカル株式会社 洗浄方法
AU6135298A (en) 1997-01-27 1998-08-26 California Institute Of Technology Mems electrospray nozzle for mass spectroscopy
US5896870A (en) 1997-03-11 1999-04-27 International Business Machines Corporation Method of removing slurry particles
US6309975B1 (en) 1997-03-14 2001-10-30 Micron Technology, Inc. Methods of making implanted structures
US6149828A (en) 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
US6500605B1 (en) 1997-05-27 2002-12-31 Tokyo Electron Limited Removal of photoresist and residue from substrate using supercritical carbon dioxide process
US6306564B1 (en) 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US6344243B1 (en) 1997-05-30 2002-02-05 Micell Technologies, Inc. Surface treatment
US6114044A (en) 1997-05-30 2000-09-05 Regents Of The University Of California Method of drying passivated micromachines by dewetting from a liquid-based process
US5900354A (en) 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
US5893756A (en) 1997-08-26 1999-04-13 Lsi Logic Corporation Use of ethylene glycol as a corrosion inhibitor during cleaning after metal chemical mechanical polishing
US6270531B1 (en) 1997-08-29 2001-08-07 Micell Technologies, Inc. End functionalized polysiloxane surfactants in carbon dioxide formulations
US6099619A (en) 1997-10-09 2000-08-08 Uop Llc Purification of carbon dioxide
US5872061A (en) 1997-10-27 1999-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma etch method for forming residue free fluorine containing plasma etched layers
US6005226A (en) 1997-11-24 1999-12-21 Steag-Rtp Systems Rapid thermal processing (RTP) system with gas driven rotating substrate
DE69839935D1 (de) 1997-11-25 2008-10-09 Nec Lcd Technologies Ltd Aktiv-Matrix-Flüssigkristallanzeige und deren Herstellungsverfahren
US5904737A (en) 1997-11-26 1999-05-18 Mve, Inc. Carbon dioxide dry cleaning system
US6067728A (en) 1998-02-13 2000-05-30 G.T. Equipment Technologies, Inc. Supercritical phase wafer drying/cleaning system
US6100198A (en) 1998-02-27 2000-08-08 Micron Technology, Inc. Post-planarization, pre-oxide removal ozone treatment
KR100287173B1 (ko) 1998-03-13 2001-06-01 윤종용 포토레지스트제거방법및이들을이용한반도체장치의제조방법
WO1999049998A1 (en) 1998-03-30 1999-10-07 The Regents Of The University Of California Composition and method for removing photoresist materials from electronic components
KR100452542B1 (ko) 1998-04-14 2004-10-12 가부시끼가이샤가이죠 세정물 건조장치 및 건조방법
US6108932A (en) * 1998-05-05 2000-08-29 Steag Microtech Gmbh Method and apparatus for thermocapillary drying
ATE436043T1 (de) 1998-05-18 2009-07-15 Mallinckrodt Baker Inc Alkalische, silikat enthaltende reinigungslösungen für mikroelektronische substrate
US6200943B1 (en) 1998-05-28 2001-03-13 Micell Technologies, Inc. Combination surfactant systems for use in carbon dioxide-based cleaning formulations
US6021791A (en) 1998-06-29 2000-02-08 Speedfam-Ipec Corporation Method and apparatus for immersion cleaning of semiconductor devices
US6017820A (en) 1998-07-17 2000-01-25 Cutek Research, Inc. Integrated vacuum and plating cluster system
US6780765B2 (en) 1998-08-14 2004-08-24 Avery N. Goldstein Integrated circuit trenched features and method of producing same
JP3248492B2 (ja) 1998-08-14 2002-01-21 日本電気株式会社 半導体装置及びその製造方法
US6242165B1 (en) 1998-08-28 2001-06-05 Micron Technology, Inc. Supercritical compositions for removal of organic material and methods of using same
US6358673B1 (en) * 1998-09-09 2002-03-19 Nippon Telegraph And Telephone Corporation Pattern formation method and apparatus
JP3492528B2 (ja) * 1998-09-09 2004-02-03 日本電信電話株式会社 超臨界乾燥装置および方法
US6492277B1 (en) 1999-09-10 2002-12-10 Hitachi, Ltd. Specimen surface processing method and apparatus
US6277753B1 (en) 1998-09-28 2001-08-21 Supercritical Systems Inc. Removal of CMP residue from semiconductors using supercritical carbon dioxide process
US6110232A (en) 1998-10-01 2000-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method for preventing corrosion in load-lock chambers
US5989359A (en) * 1998-10-09 1999-11-23 Berbel; Jose A. Method for drying objects with fluids
US6232238B1 (en) 1999-02-08 2001-05-15 United Microelectronics Corp. Method for preventing corrosion of bonding pad on a surface of a semiconductor wafer
KR100421034B1 (ko) 1999-04-21 2004-03-04 삼성전자주식회사 레지스트 조성물과 이를 이용한 미세패턴 형성방법
KR100290852B1 (ko) 1999-04-29 2001-05-15 구자홍 에칭 방법
US6128830A (en) 1999-05-15 2000-10-10 Dean Bettcher Apparatus and method for drying solid articles
US6245849B1 (en) 1999-06-02 2001-06-12 Sandia Corporation Fabrication of ceramic microstructures from polymer compositions containing ceramic nanoparticles
US6436824B1 (en) 1999-07-02 2002-08-20 Chartered Semiconductor Manufacturing Ltd. Low dielectric constant materials for copper damascene
US6251250B1 (en) 1999-09-03 2001-06-26 Arthur Keigler Method of and apparatus for controlling fluid flow and electric fields involved in the electroplating of substantially flat workpieces and the like and more generally controlling fluid flow in the processing of other work piece surfaces as well
US6228563B1 (en) 1999-09-17 2001-05-08 Gasonics International Corporation Method and apparatus for removing post-etch residues and other adherent matrices
JP3553856B2 (ja) * 2000-05-08 2004-08-11 日本電信電話株式会社 超臨界乾燥方法
JP3553838B2 (ja) * 1999-12-06 2004-08-11 日本電信電話株式会社 超臨界乾燥方法
JP3494939B2 (ja) * 1999-12-17 2004-02-09 日本電信電話株式会社 超臨界乾燥方法および装置
US6286231B1 (en) 2000-01-12 2001-09-11 Semitool, Inc. Method and apparatus for high-pressure wafer processing and drying
US6361696B1 (en) 2000-01-19 2002-03-26 Aeronex, Inc. Self-regenerative process for contaminant removal from liquid and supercritical CO2 fluid streams
JP2001264810A (ja) 2000-03-21 2001-09-26 Nec Kagoshima Ltd アクティブマトリクス基板及びその製造方法
JP2001291713A (ja) 2000-04-07 2001-10-19 Canon Sales Co Inc 成膜方法及び半導体装置
US6558475B1 (en) 2000-04-10 2003-05-06 International Business Machines Corporation Process for cleaning a workpiece using supercritical carbon dioxide
AU2001255656A1 (en) 2000-04-25 2001-11-07 Tokyo Electron Limited Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
US6492090B2 (en) 2000-04-28 2002-12-10 Shin-Etsu Chemical Co., Ltd. Polymers, resist compositions and patterning process
US6319858B1 (en) 2000-07-11 2001-11-20 Nano-Architect Research Corporation Methods for reducing a dielectric constant of a dielectric film and for forming a low dielectric constant porous film
AU2001279136A1 (en) 2000-07-31 2002-02-13 The Deflex Corporation Near critical and supercritical ozone substrate treatment and apparatus for same
WO2002009894A2 (en) 2000-08-01 2002-02-07 The Deflex Llc Gas-vapor cleaning method and system therefor
US6486078B1 (en) 2000-08-22 2002-11-26 Advanced Micro Devices, Inc. Super critical drying of low k materials
AU2001288402A1 (en) 2000-08-23 2002-03-04 Deflex Llc Surface cleaning and modification processes, methods and apparatus using physicochemically modified dense fluid sprays
US6413852B1 (en) 2000-08-31 2002-07-02 International Business Machines Corporation Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material
US6777312B2 (en) 2000-11-02 2004-08-17 California Institute Of Technology Wafer-level transfer of membranes in semiconductor processing
US6623355B2 (en) 2000-11-07 2003-09-23 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization
US6673521B2 (en) 2000-12-12 2004-01-06 Lnternational Business Machines Corporation Supercritical fluid(SCF) silylation process
US6576138B2 (en) 2000-12-14 2003-06-10 Praxair Technology, Inc. Method for purifying semiconductor gases
US6656666B2 (en) 2000-12-22 2003-12-02 International Business Machines Corporation Topcoat process to prevent image collapse
US6425956B1 (en) 2001-01-05 2002-07-30 International Business Machines Corporation Process for removing chemical mechanical polishing residual slurry
US20020117391A1 (en) 2001-01-31 2002-08-29 Beam Craig A. High purity CO2 and BTEX recovery
JP2002237481A (ja) 2001-02-09 2002-08-23 Kobe Steel Ltd 微細構造体の洗浄方法
US6669916B2 (en) 2001-02-12 2003-12-30 Praxair Technology, Inc. Method and apparatus for purifying carbon dioxide feed streams
US6641678B2 (en) 2001-02-15 2003-11-04 Micell Technologies, Inc. Methods for cleaning microelectronic structures with aqueous carbon dioxide systems
US6562146B1 (en) * 2001-02-15 2003-05-13 Micell Technologies, Inc. Processes for cleaning and drying microelectronic structures using liquid or supercritical carbon dioxide
US6613157B2 (en) 2001-02-15 2003-09-02 Micell Technologies, Inc. Methods for removing particles from microelectronic structures
US6635565B2 (en) 2001-02-20 2003-10-21 United Microelectronics Corp. Method of cleaning a dual damascene structure
US6451510B1 (en) 2001-02-21 2002-09-17 International Business Machines Corporation Developer/rinse formulation to prevent image collapse in resist
US6685903B2 (en) 2001-03-01 2004-02-03 Praxair Technology, Inc. Method of purifying and recycling argon
US6503837B2 (en) 2001-03-29 2003-01-07 Macronix International Co. Ltd. Method of rinsing residual etching reactants/products on a semiconductor wafer
US6958123B2 (en) 2001-06-15 2005-10-25 Reflectivity, Inc Method for removing a sacrificial material with a compressed fluid
US6890855B2 (en) 2001-06-27 2005-05-10 International Business Machines Corporation Process of removing residue material from a precision surface
US6509136B1 (en) 2001-06-27 2003-01-21 International Business Machines Corporation Process of drying a cast polymeric film disposed on a workpiece
US6583067B2 (en) 2001-07-03 2003-06-24 United Microelectronics Corp. Method of avoiding dielectric layer deterioration with a low dielectric constant
US6979654B2 (en) 2001-07-03 2005-12-27 United Microelectronics Corp. Method of avoiding dielectric layer deterioation with a low dielectric constant during a stripping process
JP3978023B2 (ja) 2001-12-03 2007-09-19 株式会社神戸製鋼所 高圧処理方法
US7326673B2 (en) 2001-12-31 2008-02-05 Advanced Technology Materials, Inc. Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates
US6764552B1 (en) 2002-04-18 2004-07-20 Novellus Systems, Inc. Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials
US20030217764A1 (en) 2002-05-23 2003-11-27 Kaoru Masuda Process and composition for removing residues from the microstructure of an object
US6989358B2 (en) 2002-10-31 2006-01-24 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for removal of photoresists
US20040112409A1 (en) 2002-12-16 2004-06-17 Supercritical Sysems, Inc. Fluoride in supercritical fluid for photoresist and residue removal
US20040177867A1 (en) 2002-12-16 2004-09-16 Supercritical Systems, Inc. Tetra-organic ammonium fluoride and HF in supercritical fluid for photoresist and residue removal

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