WO2002041414A1 - Lichtemittierendes bauelement mit organischen schichten - Google Patents

Lichtemittierendes bauelement mit organischen schichten Download PDF

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Publication number
WO2002041414A1
WO2002041414A1 PCT/DE2001/004422 DE0104422W WO0241414A1 WO 2002041414 A1 WO2002041414 A1 WO 2002041414A1 DE 0104422 W DE0104422 W DE 0104422W WO 0241414 A1 WO0241414 A1 WO 0241414A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
layers
light
electron
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2001/004422
Other languages
German (de)
English (en)
French (fr)
Inventor
Martin Pfeiffer
Karl Leo
Jan Blochwitz-Niemoth
Xiang Zhou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Technische Universitaet Dresden
NovaLED GmbH
Original Assignee
Technische Universitaet Dresden
NovaLED GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Technische Universitaet Dresden, NovaLED GmbH filed Critical Technische Universitaet Dresden
Priority to KR20037006815A priority Critical patent/KR100641900B1/ko
Priority to DE50111165T priority patent/DE50111165D1/de
Priority to AU2002216935A priority patent/AU2002216935A1/en
Priority to BR0115497-4A priority patent/BR0115497A/pt
Priority to EP01996894A priority patent/EP1336208B1/de
Priority to US10/432,173 priority patent/US7074500B2/en
Priority to JP2002543714A priority patent/JP3695714B2/ja
Publication of WO2002041414A1 publication Critical patent/WO2002041414A1/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/155—Hole transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/165—Electron transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/917—Electroluminescent
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension

Definitions

  • the invention relates to a light-emitting component with organic layers, in particular an organic light-emitting diode according to the preamble of claim 1.
  • Organic light-emitting diodes have been used since the demonstration of low operating voltages by Tang et al. 1987 [C.W. Tang et al. Appl. Phys. Lett. 51 (12), 913 (1987)] promising candidates for the realization of large-area displays. They consist of a sequence of thin (typically 1 to 1 ⁇ m) layers of organic materials, which are preferably vapor-deposited in a vacuum or spun in their polymeric form. After electrical contact through metal layers, they form a variety of electronic or optoelectronic components, such as Diodes, light-emitting diodes, photodiodes and transistors, whose properties compete with the established components based on inorganic layers.
  • cover electrode usually a metal with low work function, electron injecting (negative pole),
  • Ecbiockn - Ecei> -0.3eV (LUMO energy of the electron-side block layer - LUMO energy of the light-emitting layer> -0.3eV).
  • the band gap of the doped transport layers is chosen so large that it is not possible to inject minority charge carriers from the emitting layer into the doped transport layer even if the block layer is so thin that it tunnels through can be.
  • This is achieved according to the invention in that the following conditions are met: a) Condition for p-doped hole transport layer (2) and emitting layer (4): Ec P > Ecei (LUMO of the injection and transport layer for holes> LUMO energy of the light-emitting layer), b) Condition for electron-side block layer (2 ') and emitting layer (4):
  • hole-side block layer (typically thinner than p-doped layer from point 3) made of a material whose band layers match the band layers of the layers surrounding them,
  • the band layers of the injecting and transporting layer and the light emission layer fit together on one side.
  • only one side can be doped.
  • the functions of charge carrier injection and charge carrier transport in layers 3 and 7 can be divided into several layers, at least one of which is doped.
  • the molar doping concentrations are typically in the range from 1:10 to 1: 10000. If the dopants are significantly smaller than the matrix molecules, in exceptional cases there may be more dopants than matrix molecules in the layer (up to 5: 1).
  • the dopants can be organic or inorganic.
  • Figure 3 shows a corresponding arrangement.
  • the hole-side block layer Between the hole-injecting and conducting layer and the light-emitting layer there is a further layer, the hole-side block layer.
  • the most important conditions for the selection of this layer are: Ev b i ock p-Ev e i ⁇ 0.3 eV, so that holes at the interface of the hole-conducting block layer / light-emitting layer are not blocked.
  • Cathode In LiF in combination with aluminum (LiF improves the injection at the contact).
  • This exemplary embodiment shows how effective the combination of doped transport layer and block layer is with regard to the optimization of operating voltage and light emission efficiency.
  • Another embodiment of the component according to the invention orders that even smaller amounts (0.1-50%) of an emission dye are mixed in the emitter layer (this admixture is also referred to in the literature as doping - but no doping within the meaning of this patent - the admixtures therefore as emitter dopants).
  • This can eg Quinacridone in Alq in the above
  • Evbiock - Eveidotand ⁇ 0.3 eV HOMO energy of the hole-side block layer - HOMO energy of the emitter dopant in the light-emitting layer ⁇ 0.3 eV

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)
PCT/DE2001/004422 2000-11-20 2001-11-20 Lichtemittierendes bauelement mit organischen schichten Ceased WO2002041414A1 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR20037006815A KR100641900B1 (ko) 2000-11-20 2001-11-20 유기층을 갖는 발광 소자
DE50111165T DE50111165D1 (de) 2000-11-20 2001-11-20 Lichtemittierendes bauelement mit organischen schichten
AU2002216935A AU2002216935A1 (en) 2000-11-20 2001-11-20 Light emitting component comprising organic layers
BR0115497-4A BR0115497A (pt) 2000-11-20 2001-11-20 Componente emissor de luz com câmadas orgânicas
EP01996894A EP1336208B1 (de) 2000-11-20 2001-11-20 Lichtemittierendes bauelement mit organischen schichten
US10/432,173 US7074500B2 (en) 2000-11-20 2001-11-20 Light emitting component comprising organic layers
JP2002543714A JP3695714B2 (ja) 2000-11-20 2001-11-20 有機層を持つ発光素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10058578.7 2000-11-20
DE10058578A DE10058578C2 (de) 2000-11-20 2000-11-20 Lichtemittierendes Bauelement mit organischen Schichten

Publications (1)

Publication Number Publication Date
WO2002041414A1 true WO2002041414A1 (de) 2002-05-23

Family

ID=7664651

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2001/004422 Ceased WO2002041414A1 (de) 2000-11-20 2001-11-20 Lichtemittierendes bauelement mit organischen schichten

Country Status (12)

Country Link
US (1) US7074500B2 (https=)
EP (1) EP1336208B1 (https=)
JP (1) JP3695714B2 (https=)
KR (1) KR100641900B1 (https=)
CN (1) CN100369286C (https=)
AT (1) ATE341837T1 (https=)
AU (1) AU2002216935A1 (https=)
BR (1) BR0115497A (https=)
DE (2) DE10058578C2 (https=)
ES (1) ES2273923T3 (https=)
IN (1) IN2003DE00736A (https=)
WO (1) WO2002041414A1 (https=)

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WO2003100880A3 (de) * 2002-05-24 2004-09-02 Novaled Gmbh Phosphoreszentes lichtemittierendes bauelement mit organischen schichten
WO2005043581A3 (en) * 2003-10-29 2005-08-25 Philips Intellectual Property Light-emitting device with increased quantum efficiency
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EP1353388A3 (en) * 2002-04-12 2007-11-28 Konica Corporation Organic electroluminescence element
US7387904B2 (en) 2003-10-03 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and manufacturing method thereof, and light emitting device using the light emitting element
WO2008074847A1 (fr) * 2006-12-20 2008-06-26 Thomson Licensing Diode organique electroluminescente ayant une couche barriere en materiau bipolaire
US7507649B2 (en) 2004-10-07 2009-03-24 Novaled Ag Method for electrical doping a semiconductor material with Cesium
US7540978B2 (en) 2004-08-05 2009-06-02 Novaled Ag Use of an organic matrix material for producing an organic semiconductor material, organic semiconductor material and electronic component
US7598519B2 (en) 2005-05-27 2009-10-06 Novaled Ag Transparent light-emitting component
EP1610594A4 (en) * 2003-04-02 2009-11-25 Fujifilm Corp ORGANIC ELECTROLUMINESCENCE ELEMENT AND ORGANIC ELECTROLUMINESCENCE DISPLAY
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US20040062949A1 (en) 2004-04-01
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BR0115497A (pt) 2003-10-21
ATE341837T1 (de) 2006-10-15
US7074500B2 (en) 2006-07-11
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