WO2000072376A1 - Electrostatic chuck and treating device - Google Patents

Electrostatic chuck and treating device Download PDF

Info

Publication number
WO2000072376A1
WO2000072376A1 PCT/JP2000/003355 JP0003355W WO0072376A1 WO 2000072376 A1 WO2000072376 A1 WO 2000072376A1 JP 0003355 W JP0003355 W JP 0003355W WO 0072376 A1 WO0072376 A1 WO 0072376A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
electrostatic chuck
insulating
dielectric
insulating substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2000/003355
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Tetsuo Kitabayashi
Hiroaki Hori
Takeshi Uchimura
Noriaki Tateno
Koh Fuwa
Ken Maehira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toto Ltd
Ulvac Inc
Original Assignee
Toto Ltd
Ulvac Inc
Nihon Shinku Gijutsu KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toto Ltd, Ulvac Inc, Nihon Shinku Gijutsu KK filed Critical Toto Ltd
Priority to DE60037885T priority Critical patent/DE60037885T2/de
Priority to KR1020077009029A priority patent/KR100933727B1/ko
Priority to KR1020017015040A priority patent/KR20020019030A/ko
Priority to AU47813/00A priority patent/AU4781300A/en
Priority to EP00929866A priority patent/EP1191581B1/en
Priority to US09/979,627 priority patent/US6768627B1/en
Publication of WO2000072376A1 publication Critical patent/WO2000072376A1/ja
Anticipated expiration legal-status Critical
Priority to US10/857,068 priority patent/US7209339B2/en
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • B23Q3/154—Stationary devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

Definitions

  • the present invention relates to a PDP (Plasma Display) manufacturing apparatus, a DVD (Digital Video Disk) master disk manufacturing apparatus, a substrate processing apparatus used in a hard disk manufacturing apparatus, a reticle fixing apparatus in an EB (Electron Beam) exposure apparatus, and an SOS. (Silicon-on-sapphire) and SII (silicon-on-in-situ) This relates to an insulated substrate processing equipment used for CVD, etching equipment and sputtering equipment for manufacturing devices formed on wafers. Background art
  • the object to be processed is a glass substrate and exhibits electrical insulation. Therefore, conventionally, these substrates cannot be electrostatically adsorbed in a vacuum, and in such a manufacturing apparatus, they are placed flat on a stage or fixed and processed by a mechanical mechanism.
  • the reticle of the EB exposure machine is made of quartz and has electrical insulation. Therefore, in order to fix the reticle under vacuum, it was conventionally fixed by a mechanical mechanism.
  • stage mounting surface of SOS and SII substrates which are attracting attention as next-generation alternatives to silicon wafers, shows electrical insulation.
  • electrostatic chuck as in the case of a silicon wafer in a manufacturing apparatus for forming elements on these wafers.
  • the means and principle for electrostatically adsorbing a silicon wafer are disclosed in Japanese Patent Laid-Open No. 5-63062, but according to that principle, an insulating substrate cannot be electrostatically adsorbed.
  • the present invention has been made to solve the above problems, and an object of the present invention is to provide an electrostatic chuck capable of electrostatically adsorbing an insulating substrate such as a glass substrate, and an insulating chuck using the electrostatic chuck.
  • An object of the present invention is to provide a substrate heating / cooling apparatus and a method for controlling the temperature of an insulating substrate. Disclosure of the invention
  • the distance between a plurality of electrodes on one side of the dielectric constituting the electrostatic chuck is reduced, and the thickness of the dielectric is reduced. Then, a potential difference was applied between the electrodes to form a non-uniform electric field on the dielectric adsorption surface.
  • the insulator that is the object to be processed in the non-uniform electric field partially polarizes, and generates a Gradient force (gradient force) that is attracted in a direction in which the electric field intensity is strong.
  • the Gradient force becomes F oc ⁇ - gradE 2 (F is the Gradient force, ⁇ is the induced polarization charge, and ⁇ is the electric field), and the present invention utilizes this effect.
  • claims 1 to 10 disclose an electrostatic chuck for adsorbing an insulating substrate by defining the shape, physical properties, and electrode shape of the dielectric.
  • Claims 11 to 13 disclose a method for treating an insulating substrate under reduced pressure using the electrostatic chuck.
  • Claims 14 to 15 are plates provided with a flow path for supplying or dissipating heat generated by a process to the electrostatic chuck or heat supplied to an insulating substrate by a medium, A gas supply pipe for supplying a sealing gas to adjust the heat transfer in the gap between the insulating substrate and the dielectric adsorption surface, and the sealing gas pressure is adjusted by the temperature of the insulating substrate.
  • An insulated substrate heating / cooling apparatus and a temperature control system that can be adjusted to a preset temperature have been disclosed.
  • FIG. 1 is a plan view showing an example of the electrostatic chuck.
  • FIG. 2 is a cross-sectional view of FIG. 1 along AA.
  • FIG. 3 is a cross-sectional view of another embodiment in which an insulating substrate is sucked by an electrostatic chuck.
  • FIG. 4 is an example of a pattern of electrodes provided on a dielectric.
  • FIG. 5 is an example of an electrode pattern provided on a dielectric.
  • FIG. 6 is an example of a pattern of electrodes provided on a dielectric.
  • FIG. 7 is a graph showing the relationship between the heating / cooling gas pressure and the temperature of the insulating substrate.
  • FIG. 8 is a graph showing the relationship between the applied voltage of the electrostatic chuck and the temperature of the insulating substrate.
  • FIG. 9 is a graph showing the relationship between the area ratio of the solid contact portion of the electrostatic chuck and the temperature of the insulating substrate.
  • FIG. 1 is a plan view showing an example of the electrostatic chuck according to the present invention
  • FIG. 2 is a sectional view thereof.
  • Fig. 3 shows an embodiment in which the insulating support base 1b is made of the same material as the dielectric substrate 1a to form a laminated structure, and the insulating substrate 10 is attracted to the electrostatic chuck 1.
  • FIG. 3 shows a state.
  • the electrostatic chuck 1 is joined to the metal plate 6 through the joint 11, and the medium is passed through a medium flow path 8 provided inside the metal plate 6 to heat and cool the electrostatic chuck 1.
  • FIGS. 4 to 6 show an example of the pattern of the electrode 7 formed on one surface of the dielectric represented by the above embodiment.
  • the electrodes 7 By forming the electrodes 7 in a plurality of pairs, a high-frequency current used in the plasma process of the SOS or SII wafer can be dispersed to each electrode, and the load per conductive terminal or the like can be reduced.
  • Gas is supplied from the gas supply port 5 through the gas supply pipe 13 and is filled in the gas filling section 9. At this time, a groove 4 is provided on the surface of the electrostatic chuck 1 to quickly and uniformly fill the gas. Heat transfer between the insulating substrate 10 and the electrostatic chuck 1 is performed through the gas filling portion 9 and the solid contact portion.
  • a gas pressure gauge 16 is installed near the gas supply pipe and outputs a signal voltage in the range of 0 to 10 V depending on the pressure.
  • a pressure control valve 17 is installed in the gas pipe, and the gas pressure can be adjusted to the set value by opening and closing the valve by comparing the signal voltage of the gas pressure gauge 16 with the set value.
  • Table 1 below shows the results of measuring the electrostatic attraction force when the characteristics of the dielectric were changed.
  • a measured value of 300 gZ 5 cm 2 corresponds to a tensile strength of about 300 gZcm 2 .
  • This value is equivalent to about 30 KPa, which is a sufficient force to adsorb the target in the vacuum chamber.
  • all tests in Table 1 used an electrode width of 1 mm, an electrode spacing of 1 mm, and a dielectric thickness of 0.5 mm.
  • 1A to 1D and 2 are the relations of the electrostatic attraction force when the resistivity of the dielectric substrate is changed. Although the resistivity does not seem to be affected much by the electrostatic force, it can be said that it is easy to use when the resistivity is less than 10 13 ⁇ cm because a large electrostatic attraction force appears.
  • 1F and 1G are the electrostatic attraction force when the surface roughness of the insulating substrate is changed. Compared with 1B, it was found that the surface roughness was preferably Ra 0.25 zm or less.
  • the surface roughness of the insulating substrate used in this example was Ra 0.1; m or less, except for the polycrystalline alumina substrate of 1 P.
  • 1B and 2 to 6 show the relationship of the electrostatic attraction force when the dielectric material is changed.
  • the physical properties of the dielectric seemed to be more related to the resistivity than the relative permittivity.
  • As the material a ceramic sintered body obtained by adding chromium oxide and titanium oxide to alumina and a material obtained by adding a sintering aid thereto were most stable, and a large adsorption force was obtained.
  • the electrostatic attraction force was measured by changing the type of the object to be adsorbed. As a result, it was confirmed that electrostatic attraction can be performed even with other insulating materials, and that a larger adsorbent with a higher relative dielectric constant developed a larger force.
  • the object to be adsorbed was a polycrystalline alumina substrate, and the electrostatic attraction force was measured when the surface roughness was changed. As a result, it was found that if the surface roughness of the object to be adsorbed was about Ra 0.4 / xm, a sufficient adsorbing force could be obtained.
  • the relative dielectric constant of the object It was found that the surface roughness of the object to be adsorbed can be made rougher.
  • the electrostatic attraction force when the dielectric material was changed is shown in 2-7. It was shown that electrostatic adsorption also occurs on ceramics other than those obtained by adding chromium oxide and titanium oxide to alumina.
  • the object to be adsorbed is PDP glass, a rubber-based material that does not easily damage the glass is effective from the viewpoint of visibility.
  • silicon rubber is used, but natural rubber, chloroprene rubber, butyl rubber, nitrile rubber, fluorine rubber, or a resin such as polyurethane or PTFE may be used. In this case the volume resistivity is 1 0 1 3 ⁇ cm or less.
  • Table 2 shows the electrostatic attraction force and applied voltage of the glass substrate when the electrode pattern of the electrostatic chuck according to the present invention was changed using a material consisting of a ceramic sintered body obtained by adding chromium oxide and titanium oxide to alumina. (10 KV applied).
  • the thickness of the dielectric material is 0.3 mm, and the electrostatic attraction force is even greater. The thinner the thickness, the greater the electrostatic attraction force.
  • the smaller the electrode width the larger the electrostatic attraction force was obtained.
  • the distance between the electrodes was larger than 2 mm, almost no electrostatic attraction force was obtained.
  • the applied voltage was applied up to 10 KV, but if a higher voltage is applied, it is expected that the electrostatic attraction force will be exhibited even at a distance of 2 mm between the electrodes.
  • the electrostatic attraction tended to decrease when the electrode spacing was greater than the dielectric thickness.
  • the thickness of the dielectric is 0.3 mm to 2.0 mm
  • the electrode spacing is 0.5 to 1 mm or less
  • the electrode width is 0.5 mm to 4 mm
  • the resistance of the dielectric it can be put to practical use at a rate of 10 13 ⁇ cm or less, it is even more preferable that the dielectric thickness is 0.3 mm to 1.0 mm, the electrode spacing is 0.5 to 1 mm or less, and the electrode width is 0.5 mm to It is preferable that the dielectric constant is 1 mm and the dielectric resistivity is 10 13 ⁇ cm or less.
  • Figs. 7 to 9 are graphs showing various heat adsorption test data and experimental data of insulating substrate cooling test characteristics, and the explanation of each graph is shown below.
  • a glass substrate low alkali glass
  • Fig. 7 shows the temperature of the insulating substrate and the pressure of the heating / cooling gas supplied to the gap between the insulating substrate and the dielectric adsorption surface when the insulating glass substrate is installed in the substrate heating / cooling device installed in the vacuum chamber. Is the relationship.
  • the thermal characteristics when a heat flow of 2 W / CIB z was applied from the upper surface of the insulating substrate 10 were expressed as the pressure of the gas on the horizontal axis and the surface temperature of the insulating substrate 10 on the vertical axis.
  • the gas pressure of the gas filling section 9 the temperature of the insulating substrate 10 is increased. You can see how the degree can be controlled. In this experiment, He gas was mainly used, but the same heating and cooling effect can be obtained by using Ar or N 2 .
  • the height of the dot 2 of the dielectric adsorption surface 19 needs to be set low in order to keep the gas pressure in the molecular flow region.
  • the height of the dot 2 may be set to 5 m or less to make the gas flow range from 0 to 13329 Pa (0 to 10 O Torr) in the above gas.
  • the shape and pattern of the groove are radial from the gas supply port, and are effective when the width is 1 mm or more and the depth is 50 m or more.
  • the width is 1.5 mm or more and the depth is 250 m or more. In this case, it takes 5 seconds or less until the pressure distribution in the gap becomes uniform.
  • the effect of the groove pattern is further increased by combining radial and concentric shapes.
  • the temperature of the insulating substrate 10 can be changed.
  • the temperature of the insulating substrate can be adjusted as shown in FIG.
  • FIG. 9 shows an experimental result in which it was confirmed that the temperature of the insulating substrate 10 was changed by changing the contact area ratio.
  • To change the contact area ratio it is necessary to change the number of dots and the diameter of the dots.
  • the diameter of the dot used in this example was 5 mm, and the sealing ring width was 4 mm.
  • the number of dots was converted from the contact area ratio.
  • the dots were arranged on the surface of the electrostatic chuck in a roughly equal dispersion.
  • a large heating and cooling effect for the insulating substrate 10 can be obtained by filling a high gas pressure of 6664 Pa (5 OTorr) in the gas filling portion 9, but for that purpose, strong An electrostatic chuck that generates a suction force is required.
  • a gas pressure of 1333 Pa (1 O Torr) with a contact area ratio of 20% an adsorption power of 13 g / cm 2 is theoretically required at a minimum. Therefore, the suction power A very large electrostatic chuck is required.
  • alumina as a main component as a material of the insulating layer of the electrostatic chuck, chromium oxide (C r 2 ⁇ 3), use a ceramic sintered body of titanium oxide (T i 0 2) and sintering aids were added in an appropriate amount Was.
  • the adsorptive power of this material is about 300 g / 5 cm 2 at 10 KV application as in 1 A to 1 C, and the tensile strength in the vertical direction is estimated to be 300 g / cm 2 . Even if the contact area ratio is 20%, 60 g / cm 2 or more can be secured and the insulating substrate can be sufficiently adsorbed.
  • a low alkali glass substrate is used as the insulating substrate 10, but the electrostatic chuck of the present invention can be applied to electric insulating substrates and films in general.
  • a heater is provided in the insulating support base of the insulating substrate heating and cooling device, and an optical thermometer, a thermocouple, and other non-contact thermometers are provided as means for measuring the temperature of the object to be adsorbed. Comparing with a preset value facilitates temperature control of the object to be adsorbed. If the temperature of the insulating substrate cannot be measured directly, the temperature of the insulating substrate is determined based on a database that describes the relationship between the gas pressure, applied voltage, solid contact area ratio, incident heat energy, medium flow rate, medium temperature, etc. Adjustment to keep the temperature constant is possible.
  • the object to be processed is an insulator, it can be adsorbed by using an electrostatic chuck. Heating and cooling of the insulating substrate are facilitated, and the insulating substrate can be controlled at a predetermined temperature.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)
PCT/JP2000/003355 1999-05-25 2000-05-25 Electrostatic chuck and treating device Ceased WO2000072376A1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE60037885T DE60037885T2 (de) 1999-05-25 2000-05-25 Methode zur elektrostatischen Anziehung und Verarbeitung eines isolierneden Glassubstrates
KR1020077009029A KR100933727B1 (ko) 1999-05-25 2000-05-25 절연성 기판 흡착용 정전 척
KR1020017015040A KR20020019030A (ko) 1999-05-25 2000-05-25 정전 척 및 처리장치
AU47813/00A AU4781300A (en) 1999-05-25 2000-05-25 Electrostatic chuck and treating device
EP00929866A EP1191581B1 (en) 1999-05-25 2000-05-25 Method for Electrostatically Attracting and Processing a Glass Insulative Substrate
US09/979,627 US6768627B1 (en) 1999-05-25 2000-05-25 Electrostatic chuck and processing apparatus for insulative substrate
US10/857,068 US7209339B2 (en) 1999-05-25 2004-05-28 Electrostatic chuck for an electrically insulative substrate, and a method of using same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11/145507 1999-05-25
JP14550799A JP3805134B2 (ja) 1999-05-25 1999-05-25 絶縁性基板吸着用静電チャック

Related Child Applications (3)

Application Number Title Priority Date Filing Date
US09979627 A-371-Of-International 2000-05-25
US09/979,627 A-371-Of-International US6768627B1 (en) 1999-05-25 2000-05-25 Electrostatic chuck and processing apparatus for insulative substrate
US10/857,068 Continuation US7209339B2 (en) 1999-05-25 2004-05-28 Electrostatic chuck for an electrically insulative substrate, and a method of using same

Publications (1)

Publication Number Publication Date
WO2000072376A1 true WO2000072376A1 (en) 2000-11-30

Family

ID=15386861

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2000/003355 Ceased WO2000072376A1 (en) 1999-05-25 2000-05-25 Electrostatic chuck and treating device

Country Status (9)

Country Link
US (2) US6768627B1 (https=)
EP (2) EP1191581B1 (https=)
JP (1) JP3805134B2 (https=)
KR (4) KR20090003347A (https=)
CN (3) CN100375263C (https=)
AU (1) AU4781300A (https=)
DE (1) DE60037885T2 (https=)
TW (1) TW508716B (https=)
WO (1) WO2000072376A1 (https=)

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EP1156522A3 (en) * 2000-05-19 2002-03-27 Ngk Insulators, Ltd. Electrostatic chuck with an insulating layer
GB2368723A (en) * 2000-06-14 2002-05-08 Anelva Corp Electro-static chucking (ESC) mechanism
KR20020064508A (ko) * 2001-02-02 2002-08-09 삼성전자 주식회사 정전 척
WO2003092064A1 (en) * 2002-04-25 2003-11-06 Tokyo Electron Limited Member for semiconductor manufacturing system and its manufacturing method
US6781812B2 (en) 1999-07-26 2004-08-24 Nihon Shinku Gijutsu Kabushiki Kaisha Chuck equipment

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JP4156788B2 (ja) * 2000-10-23 2008-09-24 日本碍子株式会社 半導体製造装置用サセプター
JP4548928B2 (ja) * 2000-10-31 2010-09-22 京セラ株式会社 電極内蔵体及びこれを用いたウエハ支持部材
KR100750835B1 (ko) * 2001-01-19 2007-08-22 가부시키가이샤 알박 흡착장치
KR20020064507A (ko) * 2001-02-02 2002-08-09 삼성전자 주식회사 정전 척과 그의 제조방법
JP2005033221A (ja) * 2001-02-08 2005-02-03 Tokyo Electron Ltd 基板載置台および処理装置
JP4503196B2 (ja) * 2001-03-07 2010-07-14 株式会社アルバック 封着室、パネル保持台及び封着方法
JP2002270681A (ja) * 2001-03-07 2002-09-20 Anelva Corp 基板処理用静電吸着機構
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JP3408530B2 (ja) 2001-04-26 2003-05-19 東京エレクトロン株式会社 半導体製造装置用部材およびその製造方法
JP2002345273A (ja) * 2001-05-18 2002-11-29 Toto Ltd 静電チャック
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JP4707593B2 (ja) * 2006-03-23 2011-06-22 大日本スクリーン製造株式会社 熱処理装置と基板吸着方法
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DE60037885T2 (de) 2009-01-15
EP1191581A1 (en) 2002-03-27
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US6768627B1 (en) 2004-07-27
JP2000332091A (ja) 2000-11-30
KR20020019030A (ko) 2002-03-09
EP1191581B1 (en) 2008-01-23
EP1852907A1 (en) 2007-11-07
CN1179407C (zh) 2004-12-08
CN100375263C (zh) 2008-03-12
CN1365518A (zh) 2002-08-21
KR20070049689A (ko) 2007-05-11
KR20090003347A (ko) 2009-01-09
DE60037885D1 (de) 2008-03-13
EP1191581A4 (en) 2006-03-22
KR20090100455A (ko) 2009-09-23
CN1595632A (zh) 2005-03-16
KR100933727B1 (ko) 2009-12-24
TW508716B (en) 2002-11-01
US20040218340A1 (en) 2004-11-04
AU4781300A (en) 2000-12-12
CN1595631A (zh) 2005-03-16
EP1852907B1 (en) 2013-07-03

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