US7265392B2 - Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same - Google Patents

Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same Download PDF

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Publication number
US7265392B2
US7265392B2 US10/296,596 US29659603A US7265392B2 US 7265392 B2 US7265392 B2 US 7265392B2 US 29659603 A US29659603 A US 29659603A US 7265392 B2 US7265392 B2 US 7265392B2
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layer
light
emitting diode
diode chip
recited
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Expired - Lifetime
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US10/296,596
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US20030168664A1 (en
Inventor
Berthold Hahn
Ulrich Jacob
Hans-Jürgen Lugauer
Manfred Mundbrod-Vangerow
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Osram Oled GmbH
Ams Osram International GmbH
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Osram GmbH
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Publication of US20030168664A1 publication Critical patent/US20030168664A1/en
Assigned to OSRAM GMBH reassignment OSRAM GMBH ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: OSRAM OPTO SEMICONDUCTORS GMBH
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Assigned to OSRAM GMBH reassignment OSRAM GMBH TO CORRECT THE ADDRESS OF THE ASSIGNEE, OSRAM GMBH Assignors: OSRAM OPTO SEMICONDUCTORS GMBH
Priority to US13/079,235 priority patent/US8436393B2/en
Assigned to OSRAM OPTO SEMICONDUCTORS GMBH reassignment OSRAM OPTO SEMICONDUCTORS GMBH ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: OSRAM GMBH
Assigned to OSRAM OLED GMBH reassignment OSRAM OLED GMBH ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: OSRAM OPTO SEMICONDUCTORS GMBH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/019—Removal of at least a part of a substrate on which semiconductor layers have been formed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Definitions

  • the invention relates to a light-emitting diode chip comprising a GaN-based, radiation-emitting epitaxial layer sequence, to a method for fabricating the same, and to a light-emitting diode component comprising a light-emitting diode chip of this type.
  • GaN-based encompasses in particular all ternary and quaternary GaN-based mixed crystals, such as AlN, InN, AlGaN, InGaN, InAlN and AlInGaN and gallium nitride itself.
  • a fundamental problem in the fabrication of GaN-based light-emitting diode (LED) chips is that the maximum attainable electrical conductivity of p-doped layers, especially p-doped GaN or AlGaN layers, is not sufficient to achieve current spread over the entire lateral cross section of the chip with conventional front contact metallization, as known from LED chips made of other material systems (to maximize radiation decoupling, this type of metallization covers only a fraction of the front face).
  • a contact layer permeable to the radiation or an additional layer of good electrical conductivity is deposited with substantially full areal coverage on the side of the p-type layer facing away from the substrate, and is provided with a bonding contact.
  • the first-cited proposal has the disadvantage that a substantial portion of the radiation is absorbed in the contact layer.
  • the second proposal requires an additional process step that greatly increases production expenditure.
  • the object of the invention is, first, to develop an LED chip of the type cited at the beginning hereof that offers improved current spread and whose additional production expenditure is kept to a minimum.
  • An LED component with improved heat dissipation from the active region is also to be provided.
  • the p-doped layer is provided on its main surface facing away from the active layer with a reflective contact metallization.
  • a suitable reflective metal layer is, for example, an Ag-based metal layer.
  • Ag-based includes all metals whose electrical and optical properties are determined substantially by Ag. They are in particular those comprising Ag as their major constituent.
  • the contact metallization advantageously produces good ohmic contact with very low electrical transition resistance to the epitaxial layer sequence.
  • it advantageously exhibits high reflectivity and very low absorption within the stated spectral range. This results in high back-reflection of the incident electromagnetic radiation into the chip. This back-reflected radiation can then be coupled out of the chip through its bare sides.
  • the reflective contact metallization is composed, at least in part, of a PtAg and/or PdAg alloy.
  • the reflective contact metallization preferably covers more than 50%, especially preferably 100%, of the main surface of the p-doped layer facing away from the active layer. This results in current supply to the entire lateral cross section of the active region.
  • a radioparent contact layer substantially comprising at least one metal from the group Pt, Pd, Cr.
  • the reflective contact metallization can easily be optimized with respect to both its electrical and its reflective properties.
  • the thickness of a contact layer of the above-cited type is advantageously 10 nm or less.
  • the optical losses in this layer can thereby advantageously be kept especially low.
  • the contact layer has a non-closed, particularly island-like and/or net-like structure. This advantageously enables the Ag-based reflective layer to be in direct contact, at least in part, with the p-doped layer, which arrangement has a positive effect on the electrical and optical properties.
  • the contact layer is substantially composed of indium tin oxide (ITO) and/or ZnO and preferably has a thickness ⁇ 10 nm. Very good current spread accompanied by very low radiation absorption can be achieved with this type of contact layer.
  • disposed on the reflective layer is a bondable layer, in particular substantially composed of a diffusion barrier of Ti/Pt or TiWN and of Au or Al, thus improving the bondability of the reflective contact metallization.
  • the chip comprises solely epitaxial layers whose total cumulative thickness is 30 ⁇ m or less.
  • a growth substrate is removed following the epitaxial growth of the epitaxial layer sequence.
  • the reflective contact metallization is deposited, with substantially full areal coverage, on the main surface of the p-doped epitaxial layer facing away from the n-doped epitaxial layer.
  • the main surface of the n-doped epitaxial layer facing away from the p-doped epitaxial layer is provided with an n-contact metallization that covers only a portion of this main surface.
  • the decoupling of light from the chip takes place through the bare region of the main surface of the n-type epitaxial layer and through the sides of the chip.
  • the growth substrate in this type of LED chip can be both electrically insulating and radiopaque, and therefore can advantageously be selected solely with a view toward ideal growth conditions.
  • the particular advantage of a so-called thin-film LED chip of this kind is that there are no light losses from a substrate and radiation decoupling is improved.
  • a further advantage associated with the LED chip according to the invention is that the radiation-emitting active region, in which the majority of the electrical energy conducted into the chip is converted to heat energy during operation, can be disposed very close to a heat sink, and the epitaxial layer sequence can thus be thermally connected to a heat sink with practically no intermediary, only the p-doped epitaxial layer being located between them.
  • the chip can thus be cooled very effectively, thereby increasing the stability of the wavelength of the emitted radiation.
  • Flow voltage is advantageously reduced in the LED chip according to the invention, owing to the full-area contacting.
  • the chip is mounted so that its p-side, i.e., its reflective contact metallization, rests on a chip mounting surface of an LED package, particularly a leadframe or a track of an LED package.
  • FIG. 1 a is a schematic representation of a section through a first exemplary embodiment
  • FIG. 1 b is a schematic representation of a preferred reflective contact metallization
  • FIG. 2 is a schematic representation of a section through a second exemplary embodiment.
  • a radiation-emitting epitaxial layer sequence 3 is deposited on an SiC substrate 2 .
  • the latter is composed of an n-type doped GaN or AlGaN epitaxial layer 4 and a p-type doped GaN or AlGaN epitaxial layer 5 .
  • SQW single quantum well
  • MQW multi-quantum well
  • the SiC substrate 2 is electrically conductive and is transparent to the radiation emitted by an active region 19 of the epitaxial layer sequence 3 .
  • a reflective, bondable, Ag-based contact metallization 6 is a reflective, bondable, Ag-based contact metallization 6 .
  • This is, for example, composed substantially of Ag, a PtAg alloy and/or a PdAg alloy.
  • the contact metallization 6 can also be composed of a radioparent first layer 15 (starting from epitaxial layer sequence 3 ) and a reflective second layer 16 .
  • the first layer 15 is, for example, composed substantially of Pt, Pd and/or Cr and has a thickness of 10 nm or less to keep radiation absorption to a minimum.
  • it can be made of indium tin oxide and/or ZnO. In this case its thickness is preferably 10 nm or more, since these materials exhibit very little radiation absorption. The greater thickness is advantageous for current spread.
  • the second layer 16 is, for example, composed substantially of Ag, a PtAg alloy and/or a PdAg alloy.
  • an additional metal layer 20 is deposited on the Ag-based layer.
  • This additional layer is composed of Au or Al, for example.
  • a layer of Ti/Pt or TiWN can be provided as a diffusion barrier 24 between the second layer 16 and the additional metal layer 20 .
  • the SiC substrate 2 is provided on its main surface 10 facing away from epitaxial layer sequence 3 with a contact metallization 7 that covers only a portion of this main surface 10 and is realized as a bond pad for wire bonding.
  • the contact metallization 7 is, for example, composed of an Ni layer deposited on the SiC substrate 2 , followed by an Au layer.
  • the chip 1 is mounted by die bonding with its p-side, i.e., with the reflective contact metallization 6 , on a chip mounting surface 12 of a leadframe 11 of an LED package.
  • the n-contact metallization 7 is connected via a bonding wire 17 to a connecting part 18 of the leadframe 11 .
  • the decoupling of light from the chip 1 takes place through the bare region of the main surface 10 of the SiC substrate 2 and through the sides 14 of the chip.
  • the chip 1 optionally comprises an SiC substrate 2 that is thinned after the growth of the epitaxial layer sequence 3 in order to optimize the thickness of the substrate 2 with regard to the absorption and decoupling of radiation.
  • the exemplary embodiment shown in FIG. 2 differs from that of FIG. 1 a , on the one hand, by the fact that the chip 1 comprises solely epitaxial layers, i.e., epitaxial layer sequence 3 and no substrate layer. The latter was removed, for example by etching and/or grinding, after the growth of the epitaxial layers.
  • the chip height is about 25 ⁇ m.
  • the epitaxial layer sequence 3 has a double heterostructure, a single quantum well (SQW) structure or a multi-quantum well (MQW) structure comprising one or more undoped layer(s) 19 , for example of InGaN or InGaAlN.
  • SQW single quantum well
  • MQW multi-quantum well
  • the chip 1 is mounted by die bonding with its p-side, i.e., with the reflective contact metallization 6 , on a chip mounting surface 12 of a track 22 of an LED package 21 .
  • the n-contact metallization 7 is connected via a bonding wire 17 to a further track 23 .
  • the description of the invention with reference to the above exemplary embodiments is not to be construed as limiting it thereto.
  • the invention can be used in connection with all LED chips in which the epitaxial layer, remote from a growth substrate, has insufficient electrical conductivity.

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US10/296,596 2000-05-26 2001-05-28 Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same Expired - Lifetime US7265392B2 (en)

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US11/755,284 US7939844B2 (en) 2000-05-26 2007-05-30 Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same
US13/079,235 US8436393B2 (en) 2000-05-26 2011-04-04 Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE10026254.6 2000-05-26
DE10026254A DE10026254A1 (de) 2000-04-26 2000-05-26 Lumineszenzdiodenchip mit einer auf GaN basierenden strahlungsemittierenden Epitaxieschichtenfolge
DE10026254 2000-05-26
PCT/DE2001/002010 WO2001091195A1 (de) 2000-05-26 2001-05-28 Lumineszenzdiodenchip mit einer auf gan basierenden strahlungsemittierenden epitaxieschichtenfolge und verfahren zu dessen herstellung

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US11/755,284 Expired - Fee Related US7939844B2 (en) 2000-05-26 2007-05-30 Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same
US13/079,235 Expired - Fee Related US8436393B2 (en) 2000-05-26 2011-04-04 Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same

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US13/079,235 Expired - Fee Related US8436393B2 (en) 2000-05-26 2011-04-04 Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same

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EP (1) EP1284026A1 (de)
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US7939844B2 (en) 2011-05-10
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US20110175058A1 (en) 2011-07-21
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TW200618361A (en) 2006-06-01
US20070221936A1 (en) 2007-09-27
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CN1443374A (zh) 2003-09-17
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US8436393B2 (en) 2013-05-07
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US20030168664A1 (en) 2003-09-11
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