TWI292227B - Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan - Google Patents
Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan Download PDFInfo
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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Description
1292227 五、發明説明(1 ) . 本發明是有關於根據申請專利範圍第1項之前言部 份之發光二極體晶片,以及關於具有此種發光二極體晶 片之發光二極體元件。 在以下屬於,,以GaN爲主,,尤其是所有三個與四個以 GaN爲主的混合結晶,像是Ain,InN ’ AlGaN,InGaN ,InAIN與AlInGaN,以及鍺氮化物本身。 在製造以GaN爲主的發光二極體晶片中存在此基本 的問題,即,此等P-摻雜層(尤其是P-摻雜之GaN層或 AlGaN層)的可獲得之最大導電性的不足,以致於以傳 統式正面接觸金屬層,其與發光二極體晶片不同的材料 系統爲眾所周知(以此種覆蓋爲目的之儘可能高的光線 耦合而出只有在其正面的一小部份中產生),以便在晶 片整個橫截面上達成電流之擴散。 在導電基板上P-導電層之成長,因而在P-導電層之 整個橫截面上之電流模壓可能會導致在經濟上不合理的 結果。此理由如下說明。首先,此製造用於以GaN爲 主之層之成長的導電式晶格調整基板(例如GaN基板) 是涉及高的技術費用。其次,此P-摻雜之以GaN爲主 之層的成長對於未摻雜與η -摻雜之G aN -化合物而言, 並不適合於晶格調整基板,而導致對於發光二極體不足 夠的結晶品質。 在一個熟知的附著物中用於克服上述的問題,在此 P-導電層之遠離背向基板的面之整個表面塗佈對於光線 透過之接觸層或另一個導電良好的層而用於電流擴散, 1292227 五、發明説明(2 ) 此層具有所設之連線接觸。 然而此首先提到的建議具有缺點,此光線之可觀的 部份在接觸層中被吸收。在第二個所提到的建議中需要 額外的方法步驟,其在基本上提高了製造費用。 本發明的目的首先在於發展一種在一開始所提到特 性的發光二極體晶片,其具有改善之電流擴散,而將其 額外的製造費用保持得小。此外,應該將具有此種晶片 之發光二極體元件提供使用。 此首先所提到的目的是以具有申請專利範圍第1項 之特徵之發光二極體晶片而解決。其他有利的發展是申 請專利範圍第2至1 2項之標的。此其次所提到的目的 是藉由具有申請專利範圍第1 3項特徵之發光二極體元 件而解決。 在根據本發明之發光二極體中,此P-摻雜層在其遠 離背向主動層之主要表面上,具有所設之以Ag爲主之 反射式接觸金屬層。屬於”以Ag爲主”之所有金屬,其 具有最大部份是Ag,並且其電氣與光學特性在基本上 是由Ag決定。此接觸之金屬層,一方面有利地導致良 好的歐姆接觸,其具有至磊晶層序列小的界面電阻。另 一方面它在上述的光譜範圍中有利地具有高的反射能力 與小的吸收。由此在在它所發生電磁射線中產生高的反 射入晶片中。此所反射的光線然後可以經由晶片裸露的 表面由此耦合而出。此反射式接觸金屬層在一較佳的實 施形式中至少部份是由PtAg及/或PdAg的合金所構 -4- 1292227 五、發明説明(3 ) 成。 此反射式接觸金屬層較佳是覆蓋此P-摻雜層之背向 遠離主動層之主要表面之大於5 0 °/。,特別較佳是1 0 0 % 。因此達成主動區之整個橫截面之電流之供應。 爲了促進在P·摻雜層上的反射式金屬層之粘附強度 ,在兩層之間較佳較佳設有一光線通過之接觸層,其例 如在基本上至少具有Pt,Pd,Cr族的一種金屬。 因此可以以簡單的方式不但將此反射式接觸金屬層 之電氣特性而且還有其反射特性最適化。 此上述特性之接觸層的厚度有利的是小於或等於1〇 奈米(nm)。在此層中的光學損失因此可以保持特別有利 的小。 此接觸層尤其較佳具有未封閉,特別是島嶼形或網 狀的結構。因此有利地達成,此以銀(Ag)爲主的反射層 至少部份具有與P-摻雜層之直接接觸,因而其電氣與 光學特性受到正面的影響。 在一另外一個有利的實施形式中,此接觸層在基本 上是由銦錫氧化物(ITO : Indiom Tin Oxide)及/或ZnO 構成,並且較佳具有g 10奈米(nm)之厚度。以此種接 觸層可以有利地達成非常良好的電流擴散,並且在同時 達成非常小的光線吸收。 此外,在此反射層上較佳是連接結合層’其尤其在 基本上是由Ti/Pt或Ti WN所構成之以及由Au或A1所 構成之擴散阻障所形成,因而達成此反射式接觸金屬層 1292227 五、發明説明(4 ) 之連接結合性之改善。 在根據本發明之另一個發光二極體晶片中,此晶片 僅具有磊晶層,其整個的厚度小於或等於30微米(μηι) 。在此方面是將成長基板在以磊晶方式成長了磊晶_層序 列後去除。此Ρ-摻雜磊晶層在其背向遠離η-摻雜磊晶 層之主要表面上,在基本上整個表面具有所設之反射式 接觸金屬層。在此η-摻雜磊晶層之背向遠離ρ-摻雜磊 晶層之主要表面上是η-接觸金屬層,其只將此主要表 面之一部份覆蓋。此光線由晶片之耦合而出是經由η-導電磊晶層之主要表面之裸露區域以及經由晶片側面而 實施。 在發光二極體晶片之此種特性中的成長基板不但可 以電性絕緣,而且還可以透過光線,並且因此可以有利 地選擇所有有關之最適成長條件。 此種所謂的薄膜發光二極體晶片之特別的優點在於 ’在基板中沒有發生光線損失,並且達成改善之光線輔 合而出。 此根據本發明之發光二極體晶片是與其他的優點有 關,其具有此可能性,此發射光線之主動區,在其中在 操作中之一大部份在晶片中傳導之電能被轉換成熱能, 而導致非常接近散熱匯點(heat sink)。此磊晶層序列在 實際上是直接(只有p-摻雜磊晶層是設置於其中間)可與 散熱匯點作熱耦合,因此,此晶片可以非常有效地被冷 卻’因而提高了所發射光線之波長之穩定性。 -6- 1292227 五、發明説明(5 ) 在根據本發明之發光二極體晶片中,由於其整個表 面的接觸而有利地降低了流動電壓。 在此根據本發明之發光二極體元件中,具有根據本 發明之發光二極體晶片,此晶片以其P-面,即,以反 射式接觸金屬層,置於LED-殼體之晶片安裝表面上, 尤其是電性導體框架上,或是LED_殼體之導軌上而安 裝。 本發明其他有利的配置,是在以下第1 a至2圖所說 明的實施例中產生。 圖式之簡單說明 弟1 a圖係槪要圖式|兌明經由第一實施例之截面。 第1 b圖係槪要圖式說明較佳之反射式接觸金屬層。 第2圖係槪要圖式說明經由第二竇施例之截面。 在不同實施例的圖中,相同與相同作用的組成成份 各自具有所設之相同之參考符號。 在第la圖之發光二極體晶片1中,在siC式基板2 上塗佈發射光線之磊晶層序列3。其由n-導電摻雜 GaN-或AlGaN-磊晶層4與p-導電摻雜GaN-或AlGaN-嘉晶層5所構成。同樣的,一個以G a N爲主的嘉晶層 序列3例如可以具有雙異質結構:單量子井(s q w)結構 或多量子井(M Q W)結構,其具有一個或多個未摻雜層 (1 9),例如由I η G a Ν或I n G a A1Ν所構成。 此S i C式基板2是導電,並且用於使由嘉晶層序列 1 9之主動區1 9所發出的光線通過。 1292227 五、發明説明(6 ) 在其背向遠離Sic式基板2之P-面9上,在此磊晶 層序列3之上在基本上整個表面塗佈一反射式以銀(Ag) 爲主之連接接合之接觸金屬層6。其在基本上例如由銀 (Ag),由PtAg合金及/或PdAg合金所構成。 然而此接觸金屬層6還可以,如在第1 b圖中所槪要 圖式說明者,由磊晶層序列3所產生,其中透光之第一 層1 5與反射之第二層1 6所組成。 此第一層15在基本上例如是由Pt,pd及/或Cr所 構成,並且具有小於或等於10奈米(nm)之厚度,以便 將光線吸收保持得小。替代式地,它可以由銦錫氧化物 (ITO)及/或ZnO所構成。由於此種材料只顯示非常小 的光線吸收,此層較佳具有大於或等於1 0奈米(nm)的 厚度。此較大的厚度是有利於電流之擴散。 此第二層16在基本上例如是由Ag,由PtAg合金及/ 或PdAg合金所構成。 爲了改善連接結合能力,而在此以Ag爲主的層上塗 佈另一金屬層20。其例如由Au或A1構成。可以在第 二層16與另一金屬層20之間設有由Ti/Pt或TiWN所 構成的層作爲擴散阻障24。 在其背向遠離磊晶層序列3之主要表面1 0上,此 SiC式基板2具有所設接觸金屬層7 ’其只將主要表面 10的一部份覆蓋,並且形成作爲至線連接(wire connection)之連接墊(pad)。此接觸金屬層7例如是由 一個在此SiC式基板上所塗佈的Ni層所構成,接著是 1292227 五、發明説明(7 )
Au層。 晶片1是借助於小片接合—連接(Die-Bonden)以其ρ· 面,即,以其反射式接觸金屬層6,安裝於發光二極體 (LED)殼體之電性連接框架11之晶片安裝表面12上。 此η -接觸金屬層7是經由連接線(c ο η n e c t i ο n w i r e) 1 7而 與連接框架1 1之連接部份1 8相連接。 此光線之由晶片1耦ί合而出,可以經由S i C式基板2 之主要表面1 0之裸露區域,或經由晶片側面1 4而實施。 晶片1選擇式地在磊晶層序列3成長後具有變薄之 SiC式基板2,以便將有關於光線吸收與光線耦合而出 的基板2之厚度最適化。 此在第2圖中所說明的實施例不同於在第1 a圖中所 說明者,其首先在於晶片1僅具有嘉晶層,因此具有磊 晶層序列3並且沒有基板層。此基板層是在磊晶層成長 之後,例如借助於蝕刻及/或硏磨而去除。此晶片高度 大約是2 5微米(μ m)。 關於此種所謂之薄膜-LED_晶片的優點,請參閱說明 書之共同部份。其次,此磊晶層序列3具有雙異質結構 :單量子井(SQW)結構或多量子井(MQW)結構,其具有 一個或多個未摻雜層1 9,例如是由I n G a N或I n G a A 1N 所構成。 晶片1是借助於小片連接一結合(Die-Bonden)以其p-面,即,以其反射式接觸金屬層6,安裝在發光二極 體-殼體21之導電軌(conductive track)22之晶片安裝表 1292227 五、發明説明(8 ) 面1 2上。此n-接觸金屬層7是經由連接線1 7與另一 導電軌2 3連接。 此根據以上實施例之本發明之說明,是明顯地理解 爲並不是作爲對於本發明之限制。本發明尤其可在所有 的發光二極體晶片中使用,其中此由去除或長基板所存 在的磊晶層具有不足的導電能力。 參考符號說明 1 .....發光二極體晶片 2 .....基板 3 .....磊晶層序列 4 .....嘉晶層 5 .....嘉晶層 6 .....接觸金屬層 7 .....接觸金屬層 9 .....ρ -面 10 .....主要表面 12.....晶片安裝表面 15 .....層 16 .....層 17 · · · ·.連接線 1 8.....連接部份 19.....主動區 -10-
Claims (1)
- ’月條 六、申請專利範圍 第90 1 1 2492號「具有以GaN爲主之發光磊晶層序列之 此種發光二極體晶片」專利案 ( 2005年12月修正) 六、申請專利範圍 1.一種發光二極體晶片(1),其具有一個以GaN爲主之 光線發射磊晶層序列(3 ),此序列具有主動區(1 9 ), η·摻雜層(4)與p-摻雜層(5),其特徵爲, 此Ρ -摻雜層(5)在其遠離主動區(19)之主要表面 上(9)具有一以銀(Ag)爲主之反射式接觸金屬層(6) ,其中該反射式接觸金屬層(6)具有可透光之接觸層 (1 5 )與反射層(1 6 ),可透光的接觸層(1 5 )配置在p -摻雜層(5 )和反射層(1 6 )之間,及接觸層(1 5 )是一未 封閉之層。 2 ·如申請專利範圍第1項之發光二極體晶片,其中此 反射式接觸金屬層(6)至少一部份由PtAg及/或 PdAg合金所構成。 3·如申請專利範圍第1或2項之發光二極體晶片,其 中此反射式接觸金屬層(6 )將p -摻雜層(5 )之遠離主 動區(19)之主要表面(9)之大於5 0%之表面覆蓋。 4 ·如申請專利範圍第1項之發光二極體晶片,其中反 射式接觸金屬層(6 )將p -摻雜層(5 )之遠離主動區 (19)之整個主要表面(9)覆蓋。 5 .如申請專利範圍第3項之發光二極體晶片,其中反 1292227 六、申請專利範圍 射式接觸金屬層(6)將p -摻雜層(5)之遠離主動區 (19)之整個主要表面(9)覆蓋。 6 .如申請專利範圍第3項之發光二極體晶片,其中反 射式接觸金屬層(6 )具有可透過光線之接觸層(1 5 )與 反射層(1 6 ),並且此可透過光線之接觸層(1 5 )配置 在介於P -摻雜層(5 )與反射層(1 6 )之間。 7 .如申請專利範圍第4項之發光二極體晶片,其中反 射式接觸金屬層(6 )具有可透過光線之接觸層(1 5 )與 反射層(1 6 ),並且此可透過光線之接觸層(1 5 )配置 在介於P -摻雜層(5 )與反射層(1 6 )之間。 8 .申請專利範圍第1項之發光二極體晶片,其中此接 觸層(15)具有金屬Pt,Pd與Cr之至少一種。 9 .如申請專利範圍第1項之發光二極體晶片,其中此 接觸層(1 5 )之厚度小於或等於1 0奈米(nm )。 1 〇 .如申請專利範圍第8項之發光二極體晶片,其中此 接觸層(1 5 )之厚度小於或等於1 0奈米(nm )。 1 1 .如申請專利範圍第8、9或1 0項之發光二極體晶片 ,其中此接觸層(1 5 )具有島嶼形及/或網狀之結構 〇 1 2 .如申請專利範圍第1項之發光二極體晶片,其中此 接觸層(1 5 )具有島嶼形及/或網狀之結構。 1 3 .如申請專利範圍第1項之發光二極體晶片,其中反 射層(1 6 )至少一部份是與p -摻雜層(5 )直接接觸。 !292227 六、申請專利範圍 1 4 ·如申請專利範圍第1項之發光二極體晶片’其中此 接觸層(15)具有銦錫氧化物(ITO)及/或Zn0 ° 1 5 ·如申請專利範圍第1 4項之發光二極體晶片’其中 此接觸層(15)的厚度大於或等於10奈米(nm) ° 1 6 .如申請專利範圍第1或2項之發光二極體晶片’其 中此反射式接觸金屬層(6)在其遠離光線發射嘉晶層 序列(3)之面上具有另一金屬層(20) ’其尤其具有 Au 或 A1 〇 1 7 .如申請專利範圍第3項之發光二極體晶片’其中此 反射式接觸金屬層(6 )在其遠離光線發射嘉晶層序列 (3)之面上具有另一金屬層(20),其尤其具有Au或 A1 ° 1 8 .如申請專利範圍第1或4項之發光二極體晶片’其 中此反射式接觸金屬層(6 )在其遠離光線發射磊晶層 序列(3)之面上具有另一金屬層(20),其尤其具有 Au 或 A1 〇 1 9 .如申請專利範圍第1項之發光二極體晶片’其中晶 片(1)只具有嘉晶層,並且光線由晶片(1)之稱合而 出是經由η -導電層(4 )之主要表面(8 )以及經由晶片 之側面(1 4 )而達成。 20 . —種發光二極體元件,其具有如申請專利範圍第1 至1 9項中任一項之發光二極體晶片,其中此晶片(1 ) 是安裝在LED-殻體(21)之晶片安裝表面(12)上,尤 1292227 六、申請專利範圍 其是在導體框架(11)上或是LED-殻體之導電軌(22) 上,其特徵爲, 此反射式接觸金屬層(6)是設置在晶片安裝表面 (12)上。 -4-
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EP (1) | EP1284026A1 (zh) |
JP (2) | JP2003534668A (zh) |
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- 2001-05-24 TW TW090112492A patent/TWI292227B/zh not_active IP Right Cessation
- 2001-05-28 JP JP2001587491A patent/JP2003534668A/ja active Pending
- 2001-05-28 WO PCT/DE2001/002010 patent/WO2001091195A1/de active Application Filing
- 2001-05-28 EP EP01953777A patent/EP1284026A1/de not_active Withdrawn
- 2001-05-28 CN CNB200510051675XA patent/CN100411205C/zh not_active Expired - Lifetime
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CN1645639A (zh) | 2005-07-27 |
JP2003534668A (ja) | 2003-11-18 |
CN100411205C (zh) | 2008-08-13 |
US20110175058A1 (en) | 2011-07-21 |
CN1252838C (zh) | 2006-04-19 |
US7939844B2 (en) | 2011-05-10 |
CN100426544C (zh) | 2008-10-15 |
US7265392B2 (en) | 2007-09-04 |
CN1443374A (zh) | 2003-09-17 |
CN1881634A (zh) | 2006-12-20 |
US8436393B2 (en) | 2013-05-07 |
TWI289944B (en) | 2007-11-11 |
EP1284026A1 (de) | 2003-02-19 |
JP2012028828A (ja) | 2012-02-09 |
TW200618361A (en) | 2006-06-01 |
US20070221936A1 (en) | 2007-09-27 |
US20030168664A1 (en) | 2003-09-11 |
WO2001091195A1 (de) | 2001-11-29 |
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