WO1997048138A3 - Visible light emitting devices including uv-light emitting diode and uv-excitable, visible light emitting phosphor, and method of producing such devices - Google Patents

Visible light emitting devices including uv-light emitting diode and uv-excitable, visible light emitting phosphor, and method of producing such devices Download PDF

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Publication number
WO1997048138A3
WO1997048138A3 PCT/IB1997/000606 IB9700606W WO9748138A3 WO 1997048138 A3 WO1997048138 A3 WO 1997048138A3 IB 9700606 W IB9700606 W IB 9700606W WO 9748138 A3 WO9748138 A3 WO 9748138A3
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
visible light
devices
phosphor
excitable
Prior art date
Application number
PCT/IB1997/000606
Other languages
French (fr)
Other versions
WO1997048138A2 (en
Inventor
Piotr M Mensz
Douglas A Stanton
Nikhil Taskar
Original Assignee
Philips Electronics Nv
Philips Norden Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics Nv, Philips Norden Ab filed Critical Philips Electronics Nv
Priority to EP97920917A priority Critical patent/EP0856202A2/en
Priority to JP10501390A priority patent/JPH11510968A/en
Publication of WO1997048138A2 publication Critical patent/WO1997048138A2/en
Publication of WO1997048138A3 publication Critical patent/WO1997048138A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements

Abstract

Light emitting displays and lamps are produced by photo pumping UV excitable phosphors with UV emitting GaN-based light emitting diodes (LEDs). Resonant cavities are incorporated into the LED structures to both narrow and heighten the emission spectrum. Color displays are produced from arrays of individual LED-phosphor combinations of different colors. Such LED pumped phosphor devices do not require a vacuum environment and operate at much lower voltages than the electron beam pumped phosphor screens of cathode ray tubes (CRTs).
PCT/IB1997/000606 1996-06-11 1997-05-28 Visible light emitting devices including uv-light emitting diode and uv-excitable, visible light emitting phosphor, and method of producing such devices WO1997048138A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP97920917A EP0856202A2 (en) 1996-06-11 1997-05-28 Visible light emitting devices including uv-light emitting diode and uv-excitable, visible light emitting phosphor, and method of producing such devices
JP10501390A JPH11510968A (en) 1996-06-11 1997-05-28 Visible light emitting display including ultraviolet light emitting diode and ultraviolet excited visible light emitting phosphor and method of manufacturing the device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US66152096A 1996-06-11 1996-06-11
US08/661,520 1996-06-11

Publications (2)

Publication Number Publication Date
WO1997048138A2 WO1997048138A2 (en) 1997-12-18
WO1997048138A3 true WO1997048138A3 (en) 1998-02-19

Family

ID=24653946

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB1997/000606 WO1997048138A2 (en) 1996-06-11 1997-05-28 Visible light emitting devices including uv-light emitting diode and uv-excitable, visible light emitting phosphor, and method of producing such devices

Country Status (3)

Country Link
EP (1) EP0856202A2 (en)
JP (1) JPH11510968A (en)
WO (1) WO1997048138A2 (en)

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US9196800B2 (en) 1996-06-26 2015-11-24 Osram Gmbh Light-radiating semiconductor component with a luminescence conversion element
US9281454B2 (en) 2002-06-26 2016-03-08 Lg Innotek Co., Ltd. Thin film light emitting diode
CN106410006A (en) * 2016-06-22 2017-02-15 厦门乾照光电股份有限公司 Ultraviolet light emitting diode integrating visible light indicating device and production method thereof

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CN106410006A (en) * 2016-06-22 2017-02-15 厦门乾照光电股份有限公司 Ultraviolet light emitting diode integrating visible light indicating device and production method thereof

Also Published As

Publication number Publication date
EP0856202A2 (en) 1998-08-05
JPH11510968A (en) 1999-09-21
WO1997048138A2 (en) 1997-12-18

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