EP0907970B1 - White light-emitting diode - Google Patents

White light-emitting diode Download PDF

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Publication number
EP0907970B1
EP0907970B1 EP98903213A EP98903213A EP0907970B1 EP 0907970 B1 EP0907970 B1 EP 0907970B1 EP 98903213 A EP98903213 A EP 98903213A EP 98903213 A EP98903213 A EP 98903213A EP 0907970 B1 EP0907970 B1 EP 0907970B1
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EP
European Patent Office
Prior art keywords
light
phosphor
emitting
diode
phosphors
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EP98903213A
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German (de)
French (fr)
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EP0907970A1 (en
Inventor
Thomas JÜSTEL
Hans Nikol
Cees Ronda
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Philips Intellectual Property and Standards GmbH
Koninklijke Philips NV
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Philips Intellectual Property and Standards GmbH
Koninklijke Philips Electronics NV
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Priority claimed from DE19756360A external-priority patent/DE19756360A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials

Definitions

  • the invention relates to a light emitting device for generating white light from a light emitting diode and a phosphor layer.
  • Light-emitting diodes are used as signal lamps, indicator displays, control and warning lamps, as light transmitters in photoelectric sensors, for optocouplers, IR remote control and optical fiber transmission systems. They offer a number of advantages over other light-emitting devices, e.g. Lightbulbs. They have a long service life, high shock and vibration resistance, good modulability up to the MHZ range, high packing densities, wide circuit compatibility and no inrush current peaks. They require a low operating voltage and have a low power consumption.
  • any color of visible light can be generated from shortwave light, ie, blue, violet, and ultraviolet light. It combines the light emitting diode, which emits short-wave light, with a suitable phosphor, which converts the short-wave light into the desired color, by absorbing the short-wave light and re-emitting light of the other color in the longer wavelength range.
  • White light can be z. B. with a blue emitting light emitting diode when combined with a phosphor which absorbs blue light, converts it and emits it as light in the yellow-orange region of the spectrum.
  • the yellow-orange light mixes with the remaining portion of the blue light from the light-emitting diode and is obtained from blue together with the complementary color yellow white light.
  • JP 08007614 A Patent Abstracts of Japan discloses a planar light source using a light-emitting diode which emits blue light and which is combined with a fluorescent layer of an orange fluorescent pigment so that the blue light of the diode is observed as white light can.
  • a disadvantage of this light source is that the hue of the white light is greatly affected by the small amount of the fluorescent pigment in the fluorescent layer and therefore difficult to control. Only with a high color temperature between 8000 and 8600 K, a good color rendering is obtained. If the color temperature is lowered, the color rendering index CRI also drops considerably.
  • WO 97/48138 is a lamp of an array of individual red, green, and blue phosphorous-converted UV LEDs that individually provide red green or blue light, or together provide white mixed light.
  • EP 0446 846 Discloses dye preparations containing fluorescent europium complexes and their use in dye formulations for a thermal transfer color printing process.
  • the object is achieved by a light-emitting device with a UV diode having a primary emission of 300 nm ⁇ ⁇ 370 nm and having a phosphor layer with a mixture of a blue-emitting phosphor having an emission band of 430 ⁇ m ⁇ ⁇ ⁇ 490 nm, a green emitting phosphor which is a line emitter having an emission band having a maximum wavelength of 520 nm ⁇ ⁇ ⁇ 570 nm and a red emitting phosphor which is a line emitter having an emission band having a wavelength maximum of 605 nm ⁇ ⁇ ⁇ 620 nm.
  • the light-emitting device exhibits high color rendering and high efficiency at the same time because the phosphors absorb the UV band with high efficiency, the quantum efficiency is high - over 90% - and the half-width of the emission line is small.
  • the light output is high because no light is emitted in the range above 440 nm and below 650 nm, where the eye sensitivity is low. -
  • the white light emitted from the light-emitting device is of high quality.
  • the color rendering index CRI is 90 at a color temperature of 4000 K.
  • the color rendering depends only on the composition of the three phosphors, not from the relation of converted to nonconverted light and is therefore easy to control and regulate.
  • the phosphors are lanthanide-activated phosphors, in particular that the phosphors are activated by Eu (III) or Tb (III).
  • the blue-emitting phosphor is a line emitter having an emission band at 430nm ⁇ ⁇ ⁇ 490nm.
  • the UV diode is a GaN diode.
  • the phosphor layer has a blue-emitting phosphor in an amount x1 of 0 ⁇ x1 ⁇ 30 wt%, a green-emitting phosphor in an amount x2 of 20 ⁇ x2 ⁇ 50 wt. % and a red-emitting phosphor in an amount x3 of 30 ⁇ x3 ⁇ 70% by weight.
  • the phosphor layer contains BaMgAl 10 O 17 : Eu as the blue-emitting phosphor, ZnS: Cu as the green-emitting phosphor, and Y 2 O 2 S: Eu as the red-emitting phosphor.
  • a light-emitting device comprises a UV diode as excitation source for the UV radiation and a phosphor layer, with a mixture of three phosphors, which convert the UV light of the UV diode into visible, white light.
  • the device is constructed so that the UV diode is embedded in a hemispherical cup of a polymer, which is arranged on a transparent substrate (front panel) 1 .
  • the three phosphor powders 2 are finely distributed embedded in the polymer 3 .
  • the polymer cup together with the phosphorus powder forms the phosphor layer.
  • the device according to the invention may further comprise mirrors 4 for UV and visible light for improving the light extraction.
  • the cup itself may be formed as a reflector.
  • the light-emitting device consists of a UV diode and a transparent coating applied thereto, which contains the phosphors.
  • the transparent coating may, for example, contain the phosphors in a solid solution in a transparent matrix of polyacrylate, polystyrene, epoxy resin or another polymer.
  • LEDs are typically molded in epoxy resin housings, with a molded dome-shaped epoxy lens used to improve the extraction of light from the diode.
  • the phosphors can be applied as a contact layer between the actual diode and the epoxy resin dome. They can also be applied as a coating on the outside of the epoxy resin dome.
  • the diode array may be covered by a glass plate printed with the phosphors.
  • the UV diode is in particular a UV diode made of InGaN or GaN and has its emission maximum between 370 and 410 nm with a full width at half maximum FWHM ⁇ 50 nm.
  • These means comprise at least two electrodes.
  • the three phosphors are selected to be excited by the UV light of the UV diode and the red phosphorus has a narrow emission line at 590 mm ⁇ ⁇ ⁇ 630 nm, the green phosphor a narrow emission line at 520 nm ⁇ ⁇ ⁇ 570 nm and the blue phosphor has a narrow emission line at 430 nm ⁇ ⁇ ⁇ 490 nm.
  • a broadband emitter may also be used.
  • the emission lines of the three phosphors can be tuned very precisely, even if the emissions are not completely independent of each other, as emission flanks partially overlap. This allows the color coordinates of the white light to be set accurately.
  • the phosphors are preferably lanthanide-activated phosphors, for example Eu 3+ or Tb 3+ -activated phosphors.
  • These complex coordination compounds of europium (III) contain Eu 3+ as the metal center, diketonates as anionic chelate ligands and 2,2'-bipyridine or a 2,2'-bipyridyl derivative as neutral chelating ligands.
  • pentane-2,4-dithionate (acac), 2,2,6,6-tetramethyl-3,5-heptanedithionate (thd), 1- (2-thenoyl) -4,4,4-trifluoro-1 , 3-butanedithionate (ttfa), 7,7-dimethyl-1,1,1,2,2,3,3-heptafluoro-4,6-octanedithionate (fod), 4,4,4-trifluoro-1- ( 2-naphthyl) -1,3-butanedithionate (tfnb), 1,3-diphenyl-1,3-propanedithionate (dbm), as the neutral ligands X pyridine, or the bidentate ligands 2,2'-bipyridine (bpy), 1 , 10-phenanthroline (phen), 4,7-diphenyl-1,10-phenanthroline (dpphene), 5-methyl-1,10-phena
  • Table 1 shows blue-emitting, green-emitting and red-emitting phosphors with their wavelength maximum and their absorption at 370 nm.
  • Table. 1 ⁇ / b> Blue-emitting phosphors composition ⁇ [max] Absorption at 370 nm [%] QE at 370 nm BaMgAl 10 O 17 : Eu 450 70 90 Sr 5 (PO 4 ) 3 Cl: Eu 450 70 90 ZnS: Ag 450 75 75 Green-emitting phosphors composition ⁇ [max] Absorption at 370 nm [%] QE at 370 nm ZnS: Cu 550 40 85 BaMgAl 10 O 17 : Eu, Mn 515 70 90 Red emitting phosphors composition ⁇ [max] Absorption at 370 nm [%] QE at 370 nm Y 2 O 2 S: Eu 3+ 628 30 90 YVO 4 : Eu 3+ 620 25 85 Y (V, P, B)
  • the mixture according to the invention gives a good color rendering index and at the same time a good energy yield.
  • the light-emitting device has a color rendering index CRI ⁇ 90 at a color temperature ⁇ 4000 K and is thus suitable for interior lighting.
  • the three phosphors can be applied as a coating with a binder on the diode surface.
  • Suitable binders are, for example, film-forming acrylic polymers, such as methyl acrylate and polystyrene.
  • they may be mixed in micrograms into the epoxy resin of the epoxy resin dome and evenly distributed throughout the epoxy resin dome.
  • epoxy resin another transparent thermoset can be used. This gives a more diffuse emission of white light. Because of the high brightness of the light emitting device, it may be desirable for security reasons that the light emission be more diffuse.
  • the phosphors transform the invisible UV radiation into visible light, which is converted by the phosphors into visible light. By mixing the three phosphors with different emission lines, the light of the desired composition is obtained.
  • the illumination of the light-emitting device according to the invention is not the light emitted by a glowing body but the excitation illumination of the phosphors in the phosphor layer, the luminous efficacy is extraordinarily high.
  • the light-emitting device according to the invention provides a pleasant, true-to-life light.
  • the visible emission lines of the phosphors are so close to each other that a quasi-continuous spectrum results, from which a good color rendition follows.
  • a light emitting device was made of a UV diode and a phosphor layer with a mixture of the three phosphors.
  • An undoped GaN diode with transparent sapphire as the diode substrate was used.
  • the diode substrate was coated with a suspension of three phosphors in various proportions as shown in Tab. 2 in a 1% polyvinyl alcohol solution and baked at 200 ° C.
  • Tab. 2 T c [K] x 1 [BaMgAl 10 O 17 : Eu] x 2 [ZnS: Cu] x 3 [YVO 4 : Eu 3+ ] Ra8 Phosphor diode eff.
  • a light emitting device was made of a UV diode and a phosphor layer with a mixture of the three phosphors.
  • An undoped GaN diode with transparent sapphire as the diode substrate was used.
  • the diode substrate was coated with a suspension of three phosphors in various proportions as shown in Tab. 2 in a 1% polyvinyl alcohol solution and baked at 200 ° C.
  • Tab. 3 T c [K] x 1 [BAM] x 2 [ZnS: Cu] x 3 [Eu (acac) 3 (phen)] Ra8 Phosphor diode eff.
  • a light emitting device was made of a UV diode and a phosphor layer with a mixture of the three phosphors.
  • the diode substrate was coated with a suspension of three phosphors in various proportions as shown in Tab. 2 in a 1% polyvinyl alcohol solution and baked at 200 ° C.
  • Tab. 4 T c [K] x 1 [BAM] x 2 [ZnS: Cu] x 3 [Y 2 O 2 S: Eu 3+ ] Ra8 Phosphor diode eff.

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Abstract

The invention relates to a light-emitting device comprising a UV diode with a primary emission of 300 nm ≤ μ ≤ 370 nm,and a phosphor layer consisting of a combination of a blue-light emitting phosphor with an emission band of 430 nm ≤ μ ≤ 490 nm, a green-light emitting phosphor with an emission band of 520 nm ≤ μ ≤ 570 nm and a red-light emitting phosphor with an emission band of 590 nm ≤ μ ≤ 630 nm, said device emitting high-quality white light. The colour rendering index CRI is 90 at a colour temperature of 4 000 K. As colour rendering depends only on the composition of the three phosphors and not on the relation of converted to non-converted light it is easyto control and regulate.

Description

Die Erfindung betrifft eine lichtemittierende Vorrichtung zur Erzeugung von weißem Licht aus einer Lumineszenzdiode und einer Phosphorschicht.The invention relates to a light emitting device for generating white light from a light emitting diode and a phosphor layer.

Lumineszenzdioden werden als Signalleuchten, Indikatoranzeigen, Kontroll- und Warnlampen, als Lichtsender in Lichtschranken, für Optokoppler, IR- Fernsteuerungs- und Lichtwellenleiterübertragungssysteme angewendet. Sie bieten eine ganze Reihe von Vorteilen gegenüber anderen lichtemittierenden Bauelementen, z.B. Glühlampen. Sie haben eine hohe Lebensdauer, große Stoß- und Vibrationsfestigkeit, gute Modulierbarkeit bis ins MHZ-Gebiet, hohe Packungsdichten, breite Schaltkreiskompatibilität und keine Einschaltstromspitzen. Sie benötigen eine niedrige Betriebsspannung und haben eine geringe Leistungsaufnahme.Light-emitting diodes are used as signal lamps, indicator displays, control and warning lamps, as light transmitters in photoelectric sensors, for optocouplers, IR remote control and optical fiber transmission systems. They offer a number of advantages over other light-emitting devices, e.g. Lightbulbs. They have a long service life, high shock and vibration resistance, good modulability up to the MHZ range, high packing densities, wide circuit compatibility and no inrush current peaks. They require a low operating voltage and have a low power consumption.

Es war jedoch lange Zeit ein Nachteil der Lumineszenzdioden für sichtbares Licht, daß nicht alle Farben des sichtbaren Lichtes mit der gleichen Leuchtintensität verfügbar waren. Der Wirkungsgrad der Lumineszenzdioden verschlechtert sich mit abnehmender Wellenlänge, d.h. von rot über grün nach blau. Während die Helligkeit von roten und grünen Lumineszenzdioden sehr gut war und durch moderne Herstellungsverfahren noch erheblich gesteigert wurde, hatten blaue Lumineszenzdioden eine verhältnismäßig geringe Lichtintensität. Deshalb war es nicht möglich, mit einfachen Mitteln eine farbneutrale, weiße Beleuchtung durch eine Kombination von Lumineszenzdioden zu erreichen.However, it has long been a drawback of the visible light emitting diodes that not all visible light colors with the same luminous intensity were available. The efficiency of the light-emitting diodes deteriorates with decreasing wavelength, i. from red to green to blue. While the brightness of red and green light-emitting diodes was very good and was considerably increased by modern production methods, blue light-emitting diodes had a relatively low light intensity. Therefore, it was not possible to achieve a color-neutral, white illumination by a combination of light-emitting diodes with simple means.

Theoretisch läßt sich jede Farbe des sichtbaren Lichtes aus kurzwelligem Licht, d.h. blauem, violettem und ultraviolettem Licht erzeugen. Man kombiniert dazu die Lumineszenzdiode, die kurzwelliges Licht abstrahlt, mit einem geeigneten Phosphor, der das kurzwellige Licht in die gewünschte Farbe konvertiert, indem er das kurzwellige Licht absorbiert und Licht der anderen Farbe im längerwelligen Bereich wieder abstrahlt.Theoretically, any color of visible light can be generated from shortwave light, ie, blue, violet, and ultraviolet light. It combines the light emitting diode, which emits short-wave light, with a suitable phosphor, which converts the short-wave light into the desired color, by absorbing the short-wave light and re-emitting light of the other color in the longer wavelength range.

Weißes Licht läßt sich z. B. mit einer blauemittierenden Lumineszenzdiode erzeugen, wenn sie mit einem Phosphor kombiniert wird, der blaues Licht absorbiert, es konvertiert und es als Licht im gelborangenen Bereich des Spektrums abgibt. Das gelborange Licht mischt sich mit dem verbliebenen Anteil des blauen Lichtes aus der Lumineszenzdiode und man erhält aus Blau zusammen mit der Komplementärfarbe Gelb weißes Licht.White light can be z. B. with a blue emitting light emitting diode when combined with a phosphor which absorbs blue light, converts it and emits it as light in the yellow-orange region of the spectrum. The yellow-orange light mixes with the remaining portion of the blue light from the light-emitting diode and is obtained from blue together with the complementary color yellow white light.

Beispielsweise ist aus JP 08007614 A (Patent Abstracts of Japan) eine flächige Lichtquelle bekannt, für die eine lichtemittierende Diode benutzt wird, die blaues Licht emittiert, und die mit einer fluoreszierenden Schicht aus einem orange fluoreszierenden Pigment kombiniert wird, so daß das blaue Licht der Diode als weißes Licht beobachtet werden kann. Ein Nachteil dieser Lichtquelle ist es, daß der Farbton des weißen Lichtes durch die kleine Menge des fluoreszierenden Pigmentes in der fluoreszierenden Schicht stark beeinflußt wird und deshalb schwer zu kontrollieren ist. Nur mit einer hohen Farbtemperatur zwischen 8000 und 8600 K erhält man eine gute Farbwiedergabe. Erniedrigt man die Farbtemperatur, so fällt auch der Farbwiedergabeindex CRI erheblich.For example, it is off JP 08007614 A (Patent Abstracts of Japan) discloses a planar light source using a light-emitting diode which emits blue light and which is combined with a fluorescent layer of an orange fluorescent pigment so that the blue light of the diode is observed as white light can. A disadvantage of this light source is that the hue of the white light is greatly affected by the small amount of the fluorescent pigment in the fluorescent layer and therefore difficult to control. Only with a high color temperature between 8000 and 8600 K, a good color rendering is obtained. If the color temperature is lowered, the color rendering index CRI also drops considerably.

Weiterhin ist aus Jpn.J. Appl. Phys. Vol.35(1996) pp. L838 - L839 eine Lichtquelle bekannt, die eine blaue lichtemittierende Diode, die durch einen hohen Injektionsstrom auch zur Emission von UV-Licht angeregt wird, und einer Leuchtstoffmischung, die ZnS:Ag (blau), ZnS:Cu,Al(grün) und ZnCdS:Ag (rot) umfasst.Furthermore, it is off Jpn.J. Appl. Phys. Vol.35 (1996) pp. L838 - L839 a light source is known which has a blue light-emitting diode, which is also excited by a high injection current for the emission of UV light, and a phosphor mixture, the ZnS: Ag (blue), ZnS: Cu, Al (green) and ZnCdS: Ag ( red).

In der nicht vorveröffentlichten WO 97/48138 ist eine Lampe aus einem Array von individuellen roten, grünen und blauen phosphorkonverterten UV-LEDs, die individuell angesteuert rotes grünes oder blaues Licht liefern oder gemeinsam angesteuert weißes Mischlicht ergeben, offenbart.In the not pre-published WO 97/48138 is a lamp of an array of individual red, green, and blue phosphorous-converted UV LEDs that individually provide red green or blue light, or together provide white mixed light.

Darüber hinaus sind in EP 0446 846 Farbstoffzubereitungen offenbart, die fluoreszierende Europium-Komplexe enthalten, sowie deren Verwendung in Farbstoffzubereitungen für ein Thermotransfer-Farbdruckverfahren.In addition, in EP 0446 846 Discloses dye preparations containing fluorescent europium complexes and their use in dye formulations for a thermal transfer color printing process.

Es ist die Aufgabe der vorliegenden Erfindung, eine lichtemittierende Vorrichtung zur Erzeugung von weißem Licht zu schaffen, deren Farbtonwiedergabe leicht zu regulieren ist und dessen Farbwiedergabeindex hoch ist.It is the object of the present invention to provide a light-emitting device for producing white light, the color tone reproduction of which is easy to regulate and whose color rendering index is high.

Erfindungsgemäß wird die Aufgabe gelöst durch eine lichtemittierende Vorrichtung mit einer UV-Diode mit einer Primäremission von 300 nm ≤ λ≤ 370 nm und mit einer Phosphorschicht mit einer Mischung aus einem blau-emittierenden Phosphor mit einer Emissionsbande mit 430 um ≤ λ ≤ 490 nm, einem grün-emittierenden Phosphor, der ein Linienemitter mit einer Emissionsbande mit einem Wellenlängenmaximum mit 520 nm ≤ λ ≤ 570 nm ist und einem rot-emittierenden Phosphor, der ein Linienemitter mit einer Emissionsbande mit einem Wellenlängenmaximum mit 605 nm ≤ λ ≤ 620 nm ist.According to the invention, the object is achieved by a light-emitting device with a UV diode having a primary emission of 300 nm ≦ λ≤370 nm and having a phosphor layer with a mixture of a blue-emitting phosphor having an emission band of 430 μm ≦ λ ≦ 490 nm, a green emitting phosphor which is a line emitter having an emission band having a maximum wavelength of 520 nm ≤ λ ≤ 570 nm and a red emitting phosphor which is a line emitter having an emission band having a wavelength maximum of 605 nm ≤ λ ≤ 620 nm.

Die lichtemittierende Vorrichtung zeigt eine hohe Farbwiedergabe und gleichzeitig hohe Effizienz, weil die Phosphore die UV-Bande mit hoher Effizienz absorbieren, die Quantenausbeute hoch - über 90% - ist und die Halbwertsbreite der Emissionslinie gering ist. Die Lichtausbeute ist hoch, weil kein Licht im Bereich oberhalb 440 nm und unterhalb 650 nm emittiert wird, wo die Augenempfindlichkeit gering ist. -The light-emitting device exhibits high color rendering and high efficiency at the same time because the phosphors absorb the UV band with high efficiency, the quantum efficiency is high - over 90% - and the half-width of the emission line is small. The light output is high because no light is emitted in the range above 440 nm and below 650 nm, where the eye sensitivity is low. -

Das von der lichtemittierenden Vorrichtung emittierte weiße Licht ist von hoher Qualität. Der Farbwiedergabeindex CRI liegt bei 90 bei einer Farbtemperatur von 4000 K. Die Farbwiedergabe hängt dabei nur von der Zusammensetzung der drei Phosphore ab, nicht von der Relation von konvertiertem zu nichtkonvertiertem Licht und ist deshalb einfach zu kontrollieren und zu regulieren.The white light emitted from the light-emitting device is of high quality. The color rendering index CRI is 90 at a color temperature of 4000 K. The color rendering depends only on the composition of the three phosphors, not from the relation of converted to nonconverted light and is therefore easy to control and regulate.

Im Rahmen der vorliegenden Erfindung ist es bevorzugt, daß die Phosphore Lanthanid-aktivierte Phosphore sind, insbesondere daß die Phosphore durch Eu(III) oder Tb(III) aktiviert sind.In the context of the present invention it is preferred that the phosphors are lanthanide-activated phosphors, in particular that the phosphors are activated by Eu (III) or Tb (III).

Es ist ebenso bevorzugt daß der blau-emittierende Phosphor ein Linienemitter mit einer Emissionsbande bei 430nm ≤ λ ≤ 490 nm ist.It is also preferable that the blue-emitting phosphor is a line emitter having an emission band at 430nm ≦ λ ≦ 490nm.

Es ist weiterhin bevorzugt, daß die UV-Diode ein GaN-Diode ist.It is further preferred that the UV diode is a GaN diode.

Im Rahmen der vorliegenden Erfindung kann es bevorzugt sein, daß die Phosphorschicht einen blau-emittierenden Phosphor in einer Menge x1 von 0 < x1 ≤ 30 Gew.-%, einen grün-emittierenden Phosphor in einer Menge x2 von 20 ≤ x2 ≤ 50 Gew.-% und einen rot-emittierenden Phosphor in einer Menge x3 von 30 ≤ x3 ≤ 70 Ges.-% enthält.In the present invention, it may be preferable that the phosphor layer has a blue-emitting phosphor in an amount x1 of 0 <x1 ≦ 30 wt%, a green-emitting phosphor in an amount x2 of 20 ≦ x2 ≦ 50 wt. % and a red-emitting phosphor in an amount x3 of 30 ≦ x3 ≦ 70% by weight.

Es kann auch bevorzugt sein, daß die Phosphorschicht als blau-emittierenden Phosphor BaMgAl10O17:Eu, als grün-emittierenden Phosphor ZnS:Cu, und als rot-emittierenden Phosphor Y2O2S:Eu enthält.It may also be preferable that the phosphor layer contains BaMgAl 10 O 17 : Eu as the blue-emitting phosphor, ZnS: Cu as the green-emitting phosphor, and Y 2 O 2 S: Eu as the red-emitting phosphor.

Im Rahmen der vorliegenden Erfindung ist es besonders bevorzugt, daß die Phosphorschicht als rotemittierenden Phosphor einen Phosphor der Zusammensetzung [Eu(diketonat)aXb1X'b2], wobei X = Pyridin oder ein einzähniges Pyridinderivat und X' = 2,2'-Bipyridin oder ein 2,2'-Bipyridylderivat und 2a +b1 +2b2 = 8 ist, enthält.In the context of the present invention it is particularly preferred that the phosphor layer has as red-emitting phosphor a phosphor of the composition [Eu (diketonate) a X b1 X ' b2 ], where X = pyridine or a monodentate pyridine derivative and X' = 2,2'- Bipyridine or a 2,2'-bipyridyl derivative and 2a + b 1 + 2b 2 = 8.

Nachfolgend wird die Erfindung anhand einer Figur und drei Ausführungsbeispielen weiter beschrieben.

  • Fig. 1: Lichtemittierende Vorrichtung
The invention will be further described with reference to a figure and three embodiments.
  • Fig. 1: light-emitting device

Eine lichtemittierende Vorrichtung gemäß der Erfindung umfaßt eine UV-Diode als Anregungsquelle für die UV-Strahlung und eine Phosphorschicht, mit einer Mischung aus drei Phosphoren, die das UV-Licht der UV-Diode in sichtbares, weißes Licht umwandeln. In dem in der Zeichnung dargestellten Ausführungsbeispiel ist die Vorrichtung so aufgebaut, daß die UV-Diode in einen halbkugeligen Napf aus einem Polymeren eingegossen ist, der auf einem transparenten Substrat (Frontplatte) 1 angeordnet ist. Die drei Phosphorpulver 2 sind feinverteilt in das Polymere 3 eingebettet. Der Polymerennapf bildet zusammen mit den Phosphorpulvern die Phosphorschicht. Die erfindungsgemäße Vorrichtung kann weiterhin Spiegel 4 für UV- und sichtbares Licht zur Verbesserung der Lichtauskoppelung umfassen. Beispielsweise kann der Napf selbst als Reflektor ausgebildet sein.A light-emitting device according to the invention comprises a UV diode as excitation source for the UV radiation and a phosphor layer, with a mixture of three phosphors, which convert the UV light of the UV diode into visible, white light. In the embodiment shown in the drawing, the device is constructed so that the UV diode is embedded in a hemispherical cup of a polymer, which is arranged on a transparent substrate (front panel) 1 . The three phosphor powders 2 are finely distributed embedded in the polymer 3 . The polymer cup together with the phosphorus powder forms the phosphor layer. The device according to the invention may further comprise mirrors 4 for UV and visible light for improving the light extraction. For example, the cup itself may be formed as a reflector.

Im einfachsten Fall besteht die lichtemittierende Vorrichtung aus einer UV-Diode und einer auf dieser aufgebrachten transparenten Beschichtung, die die Phosphore enthält. Die transparente Beschichtung kann beispielsweise die Phosphore in einer festen Lösung in einer transparenten Matrix aus Polyacrylat, Polystyrol, Epoxyharz oder einem anderen Polymeren enthalten.In the simplest case, the light-emitting device consists of a UV diode and a transparent coating applied thereto, which contains the phosphors. The transparent coating may, for example, contain the phosphors in a solid solution in a transparent matrix of polyacrylate, polystyrene, epoxy resin or another polymer.

Als Massenprodukte werden LEDs üblicherweise in Epoxyharz-Gehäuse vergossen, wobei eine angegossene domförmige Linse aus Epoxidharz zur Verbesserung der Auskoppelung des Lichtes aus der Diode dient. Die Phosphore können bei dieser Ausführungsform als Kontaktschicht zwischen der eigentlichen Diode und dem Epoxyharzdom aufgebracht werden. Sie können auch als Beschichtung außen auf dem Epoxyharzdom aufgebracht sein.As a mass product, LEDs are typically molded in epoxy resin housings, with a molded dome-shaped epoxy lens used to improve the extraction of light from the diode. In this embodiment, the phosphors can be applied as a contact layer between the actual diode and the epoxy resin dome. They can also be applied as a coating on the outside of the epoxy resin dome.

Große, zweidimensionale, lichtemittierende Vorrichtungen können leicht hergestellt werden, indem ein Dioden-Array mit der Phosphorschicht nach der Erfindung kombiniert wird. Beispielsweise kann das Diodenarray durch eine Glasplatte abgedeckt sein, die mit den Phosphoren bedruckt ist.Large, two-dimensional, light-emitting devices can be easily manufactured by combining a diode array with the phosphor layer of the invention. For example, the diode array may be covered by a glass plate printed with the phosphors.

Die UV-Diode ist insbesondere eine UV-Diode aus InGaN oder GaN und hat ihr Emissionsmaximum zwischen 370 und 410 nm mit einer Halbwertsbreite FWHM < 50 nm.The UV diode is in particular a UV diode made of InGaN or GaN and has its emission maximum between 370 and 410 nm with a full width at half maximum FWHM < 50 nm.

Zur Aufrechterhaltung der Lichtemission sind Mittel zur Zuführung von elektrischer Energie zu der UV-Diode vorgesehen. Diese Mittel umfassen mindestens zwei Elektroden.To maintain the light emission means are provided for supplying electrical energy to the UV diode. These means comprise at least two electrodes.

Die drei Phosphore werden so ausgewählt, daß sie durch das UV-Licht der UV-Diode angeregt werden und daß der rote Phosphor eine enge Emissionslinie bei 590 mm ≤ λ ≤ 630 nm , der grüne Phosphor eine enge Emissionslinie bei 520 nm ≤ λ ≤ 570 nm und der blaue Phosphor eine enge Emissionslinie bei 430 nm ≤ λ ≤ 490 nm hat. Für den blauen Phosphor kann statt eines Linienemitters mit einer engen Emissionslinie auch ein Breitbandemitter verwendet werden. Die Emissionslinien der drei Phosphore können sehr genau aufeinander abgestimmt werden, auch wenn die Emissionen nicht ganz unabhängig voneinander sind, da Emissionsflanken teilweise überlappen. Dadurch können die Farbkoordinaten des weißen Lichtes genau eingestellt werden. Die Phosphore sind bevorzugt Lanthanid-aktivierte Phosphore z.B. Eu3+ - oder Tb3+ -aktivierte Phosphore.The three phosphors are selected to be excited by the UV light of the UV diode and the red phosphorus has a narrow emission line at 590 mm ≤ λ ≤ 630 nm, the green phosphor a narrow emission line at 520 nm ≤ λ ≤ 570 nm and the blue phosphor has a narrow emission line at 430 nm ≦ λ ≦ 490 nm. For the blue phosphor, instead of a line emitter with a narrow emission line, a broadband emitter may also be used. The emission lines of the three phosphors can be tuned very precisely, even if the emissions are not completely independent of each other, as emission flanks partially overlap. This allows the color coordinates of the white light to be set accurately. The phosphors are preferably lanthanide-activated phosphors, for example Eu 3+ or Tb 3+ -activated phosphors.

Als rote Phosphore werden Phosphore der Zusammensetzung [Eu(diketonat)aXb1X'b2], wobei X = Pyridin oder ein einzähniges Pyridinderivat und X'=2,2'-Bipyridin oder ein 2,2'-Bipyridylderivat und 2a +b1 +2b2 = 8 ist, bevorzugt. Diese komplexen Koordinationsverbindungen des Europium(III) enthalten Eu3+ als Metallzentrum, Diketonate als anionische Chelatliganden und 2,2'-Bipyridin oder ein 2,2'-Bipyridylderivat als neutrale Chelatliganden. Als Diketonate werden Pentan-2,4-dithionat (acac), 2,2,6,6-Tetramethyl-3,5-heptandithionat (thd), 1-(2-Thenoyl)-4,4,4-trifluor-1,3,butandithionat (ttfa), 7,7-Dimethyl-1,1,1,2,2,3,3-heptafluor-4,6-octandithionat(fod), 4,4,4-Trifluor-1-(2-naphtyl)-1,3-butandithionat (tfnb), 1,3-Diphenyl-1,3-propandithionat (dbm), als neutrale Liganden X Pyridin, oder die zweizähnigen Liganden 2,2'-Bipyridin (bpy), 1,10-Phenanthrolin (phen), 4,7-Diphenyl-1,10-Phenanthrolin (dpphen), 5-Methyl-1,10 phenathrolin (mphen), 4,7-Dimethyl-1,10-phenanthrolin (dmphen), 3,4,7,8- Tetramethyl-1,10-Phenanthrolin (tmphen), 5-Nitro-1,10-Phenanthrolin (NOphen), 5-Chlor-1,10-Phenanthrolin (Clphen) oder Dipyridinphenazin (dppz) verwendet.As red phosphors are phosphors of the composition [Eu (diketonat) a X b1 X ' b2 ], wherein X = pyridine or a monodentate pyridine and X' = 2,2'-bipyridine or a 2,2'-Bipyridylderivat and 2a + b 1 + 2b 2 = 8, is preferred. These complex coordination compounds of europium (III) contain Eu 3+ as the metal center, diketonates as anionic chelate ligands and 2,2'-bipyridine or a 2,2'-bipyridyl derivative as neutral chelating ligands. As diketonates, pentane-2,4-dithionate (acac), 2,2,6,6-tetramethyl-3,5-heptanedithionate (thd), 1- (2-thenoyl) -4,4,4-trifluoro-1 , 3-butanedithionate (ttfa), 7,7-dimethyl-1,1,1,2,2,3,3-heptafluoro-4,6-octanedithionate (fod), 4,4,4-trifluoro-1- ( 2-naphthyl) -1,3-butanedithionate (tfnb), 1,3-diphenyl-1,3-propanedithionate (dbm), as the neutral ligands X pyridine, or the bidentate ligands 2,2'-bipyridine (bpy), 1 , 10-phenanthroline (phen), 4,7-diphenyl-1,10-phenanthroline (dpphene), 5-methyl-1,10-phenathroline (mphene), 4,7-dimethyl-1,10-phenanthroline (dimhene), 3,4,7,8-tetramethyl-1,10-phenanthroline (temphene), 5-nitro-1,10-phenanthroline (NOphen), 5-chloro-1,10-phenanthroline (Clphen) or dipyridinphenazine (dppz) ,

In Tab. 1 sind blauemittierenden, grünemittierenden und rotemittierenden Phosphoren mit ihrem Wellenlängenmaximum und ihrer Absorption bei 370 nm angegeben. Tab. 1 Blauemittierende Phosphore Komposition λ [max] Absorption at 370 nm [%] QE at 370 nm BaMgAl10O17:Eu 450 70 90 Sr5(PO4)3Cl:Eu 450 70 90 ZnS:Ag 450 75 75 Grünemittierende Phosphore Komposition λ [max] Absorption at 370 nm [%] QE at 370 nm ZnS:Cu 550 40 85 BaMgAl10O17:Eu, Mn 515 70 90 Rotemittierende Phosphore Komposition λ [max] Absorption at 370 nm [%] QE at 370 nm Y2O2S:Eu3+ 628 30 90 YVO4:Eu3+ 620 25 85 Y(V,P,B)O4:Eu3+ 615 25 85 YNbO4:Eu3+ 615 20 90 YTaO4:Eu3+ 615 20 90 [Eu(acac)3(phen)] 611 97 70 Table 1 shows blue-emitting, green-emitting and red-emitting phosphors with their wavelength maximum and their absorption at 370 nm. <B> Table. 1 </ b> Blue-emitting phosphors composition λ [max] Absorption at 370 nm [%] QE at 370 nm BaMgAl 10 O 17 : Eu 450 70 90 Sr 5 (PO 4 ) 3 Cl: Eu 450 70 90 ZnS: Ag 450 75 75 Green-emitting phosphors composition λ [max] Absorption at 370 nm [%] QE at 370 nm ZnS: Cu 550 40 85 BaMgAl 10 O 17 : Eu, Mn 515 70 90 Red emitting phosphors composition λ [max] Absorption at 370 nm [%] QE at 370 nm Y 2 O 2 S: Eu 3+ 628 30 90 YVO 4 : Eu 3+ 620 25 85 Y (V, P, B) O 4: Eu 3+ 615 25 85 YNbO 4 : Eu 3+ 615 20 90 YTaO 4 : Eu 3+ 615 20 90 [Eu (acac) 3 (phen)] 611 97 70

Durch die erfindungsgemäße Mischung wird ein guter Farbwiedergabeindex und gleichzeitig eine gute Energieausbeute erhalten. Die lichtemittierende Vorrichtung hat einen Farbwiedergabeindex CRI < 90 bei einer Farbtemperatur ≥4000 K und eignet sich damit für Innenraumbeleuchtung.The mixture according to the invention gives a good color rendering index and at the same time a good energy yield. The light-emitting device has a color rendering index CRI <90 at a color temperature ≥4000 K and is thus suitable for interior lighting.

Zur Herstellung der Phosphorschicht können die drei Phosphore als Beschichtung mit einem Bindemittel auf der Dioden-Oberfläche aufgebracht. Als Bindemittel eignen sich beispielsweise filmbildende Acrylpolymerisate wie Methylacrylat und Polystyrol. Alternativ können sie in Mikrogrammengen dem Epoxyharz des Epoxyharzdoms beigemischt werden und gleichmäßig im gesamten Epoxyharzdom verteilt werden. Statt Epoxyharz kann auch ein anderes transparentes Duroplast verwendet werden. Dadurch erhält man eine stärker diffuse Emission des weißen Lichtes. Wegen der großen Helligkeit der lichtemittierenden Vorrichtung kann es aus Sicherheitsgründen erwünscht sein, daß die Lichtemission diffuser ist.To produce the phosphor layer, the three phosphors can be applied as a coating with a binder on the diode surface. Suitable binders are, for example, film-forming acrylic polymers, such as methyl acrylate and polystyrene. Alternatively, they may be mixed in micrograms into the epoxy resin of the epoxy resin dome and evenly distributed throughout the epoxy resin dome. Instead of epoxy resin, another transparent thermoset can be used. This gives a more diffuse emission of white light. Because of the high brightness of the light emitting device, it may be desirable for security reasons that the light emission be more diffuse.

Im Betrieb wird durch die UV-Diode UV-Licht mit einer Wellenlänge λ ≤ 370 nm erzeugt, das auf die Mischung der Phosphore in dem Phosphorschicht fällt. Diese absorbieren die Strahlung und emittieren eine längerwellige Strahlung, d.h. die Phosphore transformieren die unsichtbare UV-Strahlung in sichtbares Licht, welches durch die Phosphore in sichtbares Licht umgewandelt wird. Durch die Mischung der drei Phosphore mit unterschiedlichen Emissionslinien wird das Licht der gewünschten Zusammensetzung erhalten.In operation, UV light having a wavelength λ ≦ 370 nm, which falls on the mixture of phosphors in the phosphor layer, is generated by the UV diode. These absorb the radiation and emit longer wavelength radiation, i. The phosphors transform the invisible UV radiation into visible light, which is converted by the phosphors into visible light. By mixing the three phosphors with different emission lines, the light of the desired composition is obtained.

Da es sich bei dem Leuchten der erfindungsgemäßen lichtemittierenden Vorrichtung nicht um das von einem glühenden Körper ausgesandte Licht handelt, sondern um das Anregungsleuchten der Phosphore in der Phosphorschicht, ist die Lichtausbeute außerordentlich hoch. Die erfindungsgemäße lichtemittierende Vorrichtung liefert ein angenehmes, farbgetreues Licht. Die im sichtbaren liegenden Emissionslinien der Phosphore liegen so dicht beieinander, daß sich ein quasi-kontinuierliches Spektrum ergibt, woraus eine gute Farbwiedergabe folgt.Since the illumination of the light-emitting device according to the invention is not the light emitted by a glowing body but the excitation illumination of the phosphors in the phosphor layer, the luminous efficacy is extraordinarily high. The light-emitting device according to the invention provides a pleasant, true-to-life light. The visible emission lines of the phosphors are so close to each other that a quasi-continuous spectrum results, from which a good color rendition follows.

Ausführungsbeispiel 1Embodiment 1

Es wurde eine lichtemittierende Vorrichtung aus einer UV-Diode und einer Phosphorschicht mit einer Mischung der drei Phosphore hergestellt. Verwendet wurde eine undotierte GaN-Diode mit transparentem Saphir als Diodensubstrat. Das Diodensubstrat wurde mit einer Suspension aus drei Phosphoren in verschiedenen Mengenverhältnissen gemäß Tab. 2 in einer 1%igen Polyvinylalkohollösung beschichtet und bei 200°C eingebrannt. Tab. 2 Tc[K] x1[BaMgAl10O17:Eu] x2[ZnS:Cu] x3[YVO4:Eu3+] Ra8 Phosphor Diode eff. [lm/W] 2700 .04 .36 .60 85 9.7 3000 .08 .37 .56 85 9.8 4000 .16 .41 .43 91 9.9 5000 .22 .41 .36 92 9.6 6300 .28 .43 .30 96 9.8 A light emitting device was made of a UV diode and a phosphor layer with a mixture of the three phosphors. An undoped GaN diode with transparent sapphire as the diode substrate was used. The diode substrate was coated with a suspension of three phosphors in various proportions as shown in Tab. 2 in a 1% polyvinyl alcohol solution and baked at 200 ° C. Tab. 2 T c [K] x 1 [BaMgAl 10 O 17 : Eu] x 2 [ZnS: Cu] x 3 [YVO 4 : Eu 3+ ] Ra8 Phosphor diode eff. [Lm / W] 2700 .04 .36 .60 85 9.7 3000 .08 .37 .56 85 9.8 4000 .16 .41 .43 91 9.9 5000 .22 .41 .36 92 9.6 6300 .28 .43 .30 96 9.8

Ausführungsbeispiel 2Embodiment 2

Es wurde eine lichtemittierende Vorrichtung aus einer UV-Diode und einer Phosphorschicht mit einer Mischung der drei Phosphore hergestellt. Verwendet wurde eine undotierte GaN-Diode mit transparentem Saphir als Diodensubstrat. Das Diodensubstrat wurde mit einer Suspension aus drei Phosphoren in verschiedenen Mengenverhältnissen gemäß Tab. 2 in einer 1%igen Polyvinylalkohollösung beschichtet und bei 200°C eingebrannt. Tab. 3 Tc[K] x1[BAM] x2[ZnS:Cu] x3[Eu(acac)3(phen)] Ra8 Phosphor Diode eff. [lm/W] 2700 .06 .36 .54 82 12.0 3000 .1 .37 .49 83 11.9 4000 .18 .41 .37 89 11.8 5000 .25 .41 .31 91 11.4 6300 .30 .43 .25 95 11.3 A light emitting device was made of a UV diode and a phosphor layer with a mixture of the three phosphors. An undoped GaN diode with transparent sapphire as the diode substrate was used. The diode substrate was coated with a suspension of three phosphors in various proportions as shown in Tab. 2 in a 1% polyvinyl alcohol solution and baked at 200 ° C. Tab. 3 T c [K] x 1 [BAM] x 2 [ZnS: Cu] x 3 [Eu (acac) 3 (phen)] Ra8 Phosphor diode eff. [Lm / W] 2700 .06 .36 .54 82 12.0 3000 .1 .37 .49 83 11.9 4000 .18 .41 .37 89 11.8 5000 .25 .41 .31 91 11.4 6300 .30 .43 .25 95 11.3

Ausführungsbeispiel 3Embodiment 3

Es wurde eine lichtemittierende Vorrichtung aus einer UV-Diode und einer Phosphorschicht mit einer Mischung der drei Phosphore hergestellt. Verwendet wurde eine undotierte GaN-Diode mit transparentem Saphir als Diodensubstrat. Das Diodensubstrat wurde mit einer Suspension aus drei Phosphoren in verschiedenen Mengenverhältnissen gemäß Tab. 2 in einer 1%igen Polyvinylalkohollösung beschichtet und bei 200°C eingebrannt. Tab. 4 Tc[K] x1[BAM] x2[ZnS:Cu] x3[Y2O2S:Eu3+] Ra8 Phosphor Diode eff. [Im/W] 2700 0.05 0.31 0.63 85 12.2 3000 0.09 0.32 0.59 85 12.2 4000 0.16 0.38 0.46 89 12.7 5000 0.23 0.38 0.39 90 12.5 6300 0.28 0.40 0.32 95 12.5 A light emitting device was made of a UV diode and a phosphor layer with a mixture of the three phosphors. Has been used an undoped GaN diode with transparent sapphire as a diode substrate. The diode substrate was coated with a suspension of three phosphors in various proportions as shown in Tab. 2 in a 1% polyvinyl alcohol solution and baked at 200 ° C. Tab. 4 T c [K] x 1 [BAM] x 2 [ZnS: Cu] x 3 [Y 2 O 2 S: Eu 3+ ] Ra8 Phosphor diode eff. [Lm / W] 2700 12:05 12:31 0.63 85 12.2 3000 12:09 12:32 12:59 85 12.2 4000 12:16 12:38 12:46 89 12.7 5000 12:23 12:38 12:39 90 12.5 6300 12:28 12:40 12:32 95 12.5

Claims (8)

  1. A light-emitting device comprising an UV-diode with a primary emission of 300 nm ≤ λ ≤ 370 nm and a phosphor layer including a combination of a blue-emitting phosphor having an emission band at 430 nm ≤ λ ≤ 470 nm, a green-emitting phosphor being a line emitter having an emission band with a wavelength maximum of 520 nm ≤ λ < 570 nm, and a red-emitting phosphor being a line emitter having an emission band with a wavelength maximum of 605 nm ≤ λ ≤ 20 nm.
  2. A light-emitting device as claimed in claim 1, characterized in that the phosphors are lanthanide-activated phosphors.
  3. A light-emitting device as claimed in claim 2, characterized in that the phosphors are activated by Eu(III) or Tb(III).
  4. A light-emitting device as claimed in claim 1, characterized in that the blue-emitting phosphor is a line emitter having an emission band at 430 nm ≤ λ ≤ 490 nm.
  5. A light-emitting device as claimed in claim 1, characterized in that the UV-diode is a GaN diode.
  6. A light-emitting device as claimed in claim 1, characterized in that the phosphor layer comprises the blue-emitting phosphor in a quantity x1 of 0 < x1 ≤ 30% by weight, the green-emitting phosphor in a quantity x2 of 20 ≤ x2 ≤ 50% by weight and the red-emitting phosphor in a quantity x3 of 30 ≤ 3 ≤ 70% by weight.
  7. A light-emitting device as claimed in claim 1, characterized in that the phosphor layer comprises BaMgAl10O17:Eu as the blue-emitting phosphor, ZnS:Cu as the green-emitting phosphor and Y2O2S:Eu(III) as the red-emitting phosphor.
  8. A light-emitting device as claimed in claim 1, characterized in that the phosphor layer comprises as the red-emitting phosphor a phosphor of the composition [Eu(diketonate)aXb1X'b2], wherein X = pyridine or a monodentate pyridine derivative and X' = 2,2'-bipyridine or a 2,2'-bipyridyl derivative and 2a+b1+2b2 = 8.
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Families Citing this family (341)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998039805A1 (en) * 1997-03-03 1998-09-11 Koninklijke Philips Electronics N.V. White light-emitting diode
US6165631A (en) * 1997-03-04 2000-12-26 U.S. Philips Corporation Diode-addressed color display with lanthanoid phosphors
US6319425B1 (en) * 1997-07-07 2001-11-20 Asahi Rubber Inc. Transparent coating member for light-emitting diodes and a fluorescent color light source
US6623670B2 (en) 1997-07-07 2003-09-23 Asahi Rubber Inc. Method of molding a transparent coating member for light-emitting diodes
US6252254B1 (en) 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
US6294800B1 (en) * 1998-02-06 2001-09-25 General Electric Company Phosphors for white light generation from UV emitting diodes
US6278135B1 (en) 1998-02-06 2001-08-21 General Electric Company Green-light emitting phosphors and light sources using the same
US6255670B1 (en) * 1998-02-06 2001-07-03 General Electric Company Phosphors for light generation from light emitting semiconductors
FR2775250B1 (en) * 1998-02-24 2000-05-05 Wilco International Sarl AIRCRAFT LIGHTING MEDIA COMPATIBLE WITH A NIGHT VISION SYSTEM
US6396081B1 (en) 1998-06-30 2002-05-28 Osram Opto Semiconductor Gmbh & Co. Ohg Light source for generating a visible light
TW413956B (en) * 1998-07-28 2000-12-01 Sumitomo Electric Industries Fluorescent substrate LED
US6429583B1 (en) 1998-11-30 2002-08-06 General Electric Company Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors
US6351069B1 (en) 1999-02-18 2002-02-26 Lumileds Lighting, U.S., Llc Red-deficiency-compensating phosphor LED
US6680569B2 (en) 1999-02-18 2004-01-20 Lumileds Lighting U.S. Llc Red-deficiency compensating phosphor light emitting device
JP2001144331A (en) * 1999-09-02 2001-05-25 Toyoda Gosei Co Ltd Light emitting device
EP1142033A1 (en) * 1999-09-27 2001-10-10 LumiLeds Lighting U.S., LLC A light emitting diode device that produces white light by performing complete phosphor conversion
US6513949B1 (en) 1999-12-02 2003-02-04 Koninklijke Philips Electronics N.V. LED/phosphor-LED hybrid lighting systems
DE10001188A1 (en) * 2000-01-14 2001-07-19 Philips Corp Intellectual Pty Liquid crystal color screen with phosphor layer
US6522065B1 (en) * 2000-03-27 2003-02-18 General Electric Company Single phosphor for creating white light with high luminosity and high CRI in a UV led device
US6501100B1 (en) * 2000-05-15 2002-12-31 General Electric Company White light emitting phosphor blend for LED devices
US6466135B1 (en) 2000-05-15 2002-10-15 General Electric Company Phosphors for down converting ultraviolet light of LEDs to blue-green light
US6621211B1 (en) 2000-05-15 2003-09-16 General Electric Company White light emitting phosphor blends for LED devices
US6555958B1 (en) 2000-05-15 2003-04-29 General Electric Company Phosphor for down converting ultraviolet light of LEDs to blue-green light
DE10026435A1 (en) 2000-05-29 2002-04-18 Osram Opto Semiconductors Gmbh Calcium-magnesium-chlorosilicate phosphor and its application in luminescence conversion LEDs
WO2001093342A1 (en) * 2000-05-29 2001-12-06 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Led-based white-light emitting lighting unit
US6452217B1 (en) * 2000-06-30 2002-09-17 General Electric Company High power LED lamp structure using phase change cooling enhancements for LED lighting products
DE60143106D1 (en) * 2000-07-17 2010-11-04 Fujifilm Corp Light-emitting element and azole compound
US7306856B2 (en) * 2000-07-17 2007-12-11 Fujifilm Corporation Light-emitting element and iridium complex
DE10036940A1 (en) 2000-07-28 2002-02-07 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Luminescence conversion LED
JP2002050797A (en) * 2000-07-31 2002-02-15 Toshiba Corp Semiconductor-excited phosphor light emitting device and method of manufacturing the same
EP1501763A2 (en) 2000-08-04 2005-02-02 Color Kinetics Incorporated Ultraviolet light emitting diode systems and methods
US6747406B1 (en) * 2000-08-07 2004-06-08 General Electric Company LED cross-linkable phospor coating
US6635363B1 (en) * 2000-08-21 2003-10-21 General Electric Company Phosphor coating with self-adjusting distance from LED chip
JP2002076445A (en) * 2000-09-01 2002-03-15 Sanken Electric Co Ltd Semiconductor light emitting device
ATE412978T1 (en) * 2000-09-20 2008-11-15 Unity Opto Technology Co Ltd PRODUCTION METHOD FOR AN LED WITH AN INSULATING LAYER CONTAINING PHOSPHORUS
US6635987B1 (en) * 2000-09-26 2003-10-21 General Electric Company High power white LED lamp structure using unique phosphor application for LED lighting products
US6366033B1 (en) * 2000-10-18 2002-04-02 General Electric Company Molecular lanthanide complexes for phosphor applications
US20020084749A1 (en) * 2000-12-28 2002-07-04 Ayala Raul E. UV reflecting materials for LED lamps using UV-emitting diodes
AT410266B (en) * 2000-12-28 2003-03-25 Tridonic Optoelectronics Gmbh LIGHT SOURCE WITH A LIGHT-EMITTING ELEMENT
JP2002280607A (en) * 2001-01-10 2002-09-27 Toyoda Gosei Co Ltd Light emitting device
JP2002222989A (en) * 2001-01-26 2002-08-09 Toshiba Corp Semiconductor light emitting device
JP3736357B2 (en) * 2001-02-06 2006-01-18 松下電器産業株式会社 Illumination phosphor, light emitting diode using the illumination phosphor, and phosphor coating method
TW490863B (en) * 2001-02-12 2002-06-11 Arima Optoelectronics Corp Manufacturing method of LED with uniform color temperature
CN100372133C (en) * 2001-02-28 2008-02-27 财团法人工业技术研究院 Light-emitting element with blue light-emitting unit and covering part containing zinc selenide
US7091656B2 (en) 2001-04-20 2006-08-15 Nichia Corporation Light emitting device
TW541722B (en) * 2001-04-20 2003-07-11 Nichia Corp Light emitting device
JP4050482B2 (en) * 2001-04-23 2008-02-20 豊田合成株式会社 Semiconductor light emitting device
JP4114331B2 (en) * 2001-06-15 2008-07-09 豊田合成株式会社 Light emitting device
US6798136B2 (en) * 2001-06-19 2004-09-28 Gelcore Llc Phosphor embedded die epoxy and lead frame modifications
DE10137042A1 (en) * 2001-07-31 2003-02-20 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Planar light source based on LED
DE10137641A1 (en) * 2001-08-03 2003-02-20 Osram Opto Semiconductors Gmbh Hybrid LED
US6921920B2 (en) * 2001-08-31 2005-07-26 Smith & Nephew, Inc. Solid-state light source
KR100894372B1 (en) 2001-10-01 2009-04-22 파나소닉 주식회사 Semiconductor light emitting device and light emitting device using same
JP2003133595A (en) * 2001-10-24 2003-05-09 Seiwa Electric Mfg Co Ltd Light emitting diode lamp, red phosphor used therefor, and filter used therefor
US6923762B1 (en) * 2001-11-01 2005-08-02 Frank C. Creaghan, Jr. Venoscope apparatus
JP2003147346A (en) * 2001-11-15 2003-05-21 Kansai Tlo Kk Optical functional material and light emitting device using rare earth complex
US6759688B2 (en) * 2001-11-21 2004-07-06 Microsemi Microwave Products, Inc. Monolithic surface mount optoelectronic device and method for fabricating the device
TW518773B (en) * 2001-12-31 2003-01-21 Solidlite Corp Manufacturing method of white LED
EP1942531B1 (en) * 2002-02-15 2010-05-19 Mitsubishi Chemical Corporation Light emitting device and illuminator using the same
TW558065U (en) * 2002-03-28 2003-10-11 Solidlite Corp Purplish pink light emitting diode
KR100567548B1 (en) * 2002-04-22 2006-04-05 서울반도체 주식회사 White chip light emitting diode and method of manufacturing the same
JP3702863B2 (en) * 2002-05-15 2005-10-05 住友電気工業株式会社 White light emitting device
US20040032728A1 (en) * 2002-08-19 2004-02-19 Robert Galli Optical assembly for LED chip package
KR100554453B1 (en) * 2002-08-21 2006-03-03 서울반도체 주식회사 White light emitting device
KR100902988B1 (en) * 2002-08-26 2009-06-15 라이트온 테크놀러지 코포레이션 Manufacturing method of white light emitting diode
US6809781B2 (en) * 2002-09-24 2004-10-26 General Electric Company Phosphor blends and backlight sources for liquid crystal displays
US20040061810A1 (en) * 2002-09-27 2004-04-01 Lumileds Lighting, U.S., Llc Backlight for a color LCD using wavelength-converted light emitting devices
JP2004140185A (en) 2002-10-17 2004-05-13 Matsushita Electric Ind Co Ltd Light emitting device
US7009199B2 (en) * 2002-10-22 2006-03-07 Cree, Inc. Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current
US7182295B2 (en) * 2002-11-12 2007-02-27 Scott D. Redmond Personal flight vehicle and system
FR2848375B1 (en) * 2002-12-05 2005-01-14 Schneider Electric Ind Sas LIGHT EMITTING DIODE LIGHTING DEVICE COMPRISING A COMMUNICATION DEVICE AND INSTALLATION COMPRISING SUCH A DEVICE
US6917057B2 (en) * 2002-12-31 2005-07-12 Gelcore Llc Layered phosphor coatings for LED devices
JP3717480B2 (en) * 2003-01-27 2005-11-16 ローム株式会社 Semiconductor light emitting device
DE10316769A1 (en) * 2003-04-10 2004-10-28 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Luminescence conversion LED used in optical semiconductor components has LED chip emitting primary radiation in specified region which is partially or completely converted into longer wavelength radiation
US6787782B1 (en) 2003-04-23 2004-09-07 B/E Aerospace, Inc. Ultraviolet-light vehicle air cleaning system
KR100609830B1 (en) * 2003-04-25 2006-08-09 럭스피아 주식회사 White semiconductor light emitting device using green and red phosphors
US7005679B2 (en) * 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
WO2004104136A1 (en) * 2003-05-22 2004-12-02 Mitsubishi Chemical Corporation Light-emitting device and phosphor
EP1631354A4 (en) * 2003-05-24 2010-01-06 Ledeep Llc Skin tanning and light therapy system and method
US6861658B2 (en) * 2003-05-24 2005-03-01 Peter D. Fiset Skin tanning and light therapy incorporating light emitting diodes
JP2004352928A (en) * 2003-05-30 2004-12-16 Mitsubishi Chemicals Corp Light emitting device and lighting device
US7521667B2 (en) 2003-06-23 2009-04-21 Advanced Optical Technologies, Llc Intelligent solid state lighting
US20070138978A1 (en) * 2003-06-23 2007-06-21 Advanced Optical Technologies, Llc Conversion of solid state source output to virtual source
US20070051883A1 (en) * 2003-06-23 2007-03-08 Advanced Optical Technologies, Llc Lighting using solid state light sources
US7145125B2 (en) * 2003-06-23 2006-12-05 Advanced Optical Technologies, Llc Integrating chamber cone light using LED sources
US20070235639A1 (en) * 2003-06-23 2007-10-11 Advanced Optical Technologies, Llc Integrating chamber LED lighting with modulation to set color and/or intensity of output
US20070171649A1 (en) * 2003-06-23 2007-07-26 Advanced Optical Technologies, Llc Signage using a diffusion chamber
US6995355B2 (en) * 2003-06-23 2006-02-07 Advanced Optical Technologies, Llc Optical integrating chamber lighting using multiple color sources
JP3811142B2 (en) * 2003-06-24 2006-08-16 株式会社東芝 LED element and light emitting medium using rare earth complex
JP5456233B2 (en) * 2003-06-24 2014-03-26 ジーイー ライティング ソリューションズ エルエルシー Full spectrum phosphor mixture for white light generation by LED chip
US7462983B2 (en) * 2003-06-27 2008-12-09 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. White light emitting device
US7088038B2 (en) * 2003-07-02 2006-08-08 Gelcore Llc Green phosphor for general illumination applications
US7026755B2 (en) * 2003-08-07 2006-04-11 General Electric Company Deep red phosphor for general illumination applications
JP2007504644A (en) * 2003-08-29 2007-03-01 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ Color mixing lighting system
WO2005027231A1 (en) * 2003-09-15 2005-03-24 Koninklijke Philips Electronics N.V. White light emitting lighting system
US20050077535A1 (en) * 2003-10-08 2005-04-14 Joinscan Electronics Co., Ltd LED and its manufacturing process
US7077979B2 (en) * 2003-10-10 2006-07-18 The Regents Of The University Of California Red phosphors for solid state lighting
JP4309242B2 (en) 2003-12-19 2009-08-05 Ｎｅｃライティング株式会社 Red phosphor material, white light emitting diode using red phosphor material, and lighting device using white light emitting diode
JP2005179498A (en) * 2003-12-19 2005-07-07 Nec Lighting Ltd Red phosphor material, white light emitting diode using red phosphor material, and lighting device using white light emitting diode
US7374807B2 (en) * 2004-01-15 2008-05-20 Nanosys, Inc. Nanocrystal doped matrixes
EP1717290A1 (en) * 2004-02-06 2006-11-02 Mitsubishi Chemical Corporation Light emitting device and lighting device using it, image display unit
EP1571715A1 (en) * 2004-03-04 2005-09-07 Nan Ya Plastics Corporation Method for producing white light emission by means of secondary light exitation and its product
EP1735054A4 (en) * 2004-03-09 2010-01-20 Ledeep Llc Phototherapy systems and methods
JPWO2005093860A1 (en) * 2004-03-26 2008-02-14 シャープ株式会社 Light emitting device
CA2563331A1 (en) * 2004-04-12 2005-12-15 Ledeep, Llc Phototherapy systems and methods
US7837348B2 (en) * 2004-05-05 2010-11-23 Rensselaer Polytechnic Institute Lighting system using multiple colored light emitting sources and diffuser element
KR101433343B1 (en) * 2004-05-05 2014-08-22 렌슬러 폴리테크닉 인스티튜트 High efficiency light source using solid-state emitter and down-conversion material
KR100655894B1 (en) * 2004-05-06 2006-12-08 서울옵토디바이스주식회사 Wavelength conversion light emitting device with excellent color temperature and color rendering
US11158768B2 (en) 2004-05-07 2021-10-26 Bruce H. Baretz Vacuum light emitting diode
KR100658700B1 (en) 2004-05-13 2006-12-15 서울옵토디바이스주식회사 Light emitting device combining RGB light emitting element and phosphor
US7235792B2 (en) 2004-05-19 2007-06-26 Carl Scott Elofson Color-tuned volumetric light using high quantum yield nanocrystals
US7553683B2 (en) * 2004-06-09 2009-06-30 Philips Lumiled Lighting Co., Llc Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices
US8308980B2 (en) 2004-06-10 2012-11-13 Seoul Semiconductor Co., Ltd. Light emitting device
KR100665299B1 (en) 2004-06-10 2007-01-04 서울반도체 주식회사 Emitting material
KR100665298B1 (en) * 2004-06-10 2007-01-04 서울반도체 주식회사 Light emitting device
JP2008506011A (en) * 2004-07-06 2008-02-28 サーノフ コーポレーション Efficient green-emitting phosphor and combination with red-emitting phosphor
US20060012298A1 (en) * 2004-07-14 2006-01-19 Taiwan Oasis Technology Co., Ltd. LED chip capping construction
US20070241657A1 (en) * 2004-08-02 2007-10-18 Lumination, Llc White light apparatus with enhanced color contrast
US7144131B2 (en) 2004-09-29 2006-12-05 Advanced Optical Technologies, Llc Optical system using LED coupled with phosphor-doped reflective materials
KR100485673B1 (en) 2004-10-11 2005-04-27 씨엠에스테크놀로지(주) White photoluminescence device
US7679672B2 (en) * 2004-10-14 2010-03-16 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Electronic flash, imaging device and method for producing a flash of light having a wavelength spectrum in the visible range and the infrared range using a fluorescent material
KR20060034055A (en) 2004-10-18 2006-04-21 엘지이노텍 주식회사 Phosphor and light emitting device using same
JP2006135225A (en) * 2004-11-09 2006-05-25 Toshiba Corp Light emitting device
US7564180B2 (en) * 2005-01-10 2009-07-21 Cree, Inc. Light emission device and method utilizing multiple emitters and multiple phosphors
US8125137B2 (en) * 2005-01-10 2012-02-28 Cree, Inc. Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same
US7648649B2 (en) * 2005-02-02 2010-01-19 Lumination Llc Red line emitting phosphors for use in led applications
US7358542B2 (en) * 2005-02-02 2008-04-15 Lumination Llc Red emitting phosphor materials for use in LED and LCD applications
US20070114562A1 (en) * 2005-11-22 2007-05-24 Gelcore, Llc Red and yellow phosphor-converted LEDs for signal applications
US7497973B2 (en) * 2005-02-02 2009-03-03 Lumination Llc Red line emitting phosphor materials for use in LED applications
TWM275540U (en) * 2005-02-04 2005-09-11 Super Nova Optoelectronics Cor Light emitting device
CN1684279A (en) * 2005-02-25 2005-10-19 炬鑫科技股份有限公司 Light emitting element
US7274045B2 (en) * 2005-03-17 2007-09-25 Lumination Llc Borate phosphor materials for use in lighting applications
EP1927098B1 (en) * 2005-03-25 2018-05-23 Arkema France Illuminating device combining a white led and a diffusing sheet
US7276183B2 (en) * 2005-03-25 2007-10-02 Sarnoff Corporation Metal silicate-silica-based polymorphous phosphors and lighting devices
FR2883628B1 (en) * 2005-03-25 2007-05-25 Arkema Sa LUMINOUS DEVICE ASSOCIATING A WHITE LED WITH A DIFFUSING PLASTIC MATERIAL
JP4474317B2 (en) 2005-03-31 2010-06-02 富士フイルム株式会社 Preparation method of lithographic printing plate
JP2006326929A (en) 2005-05-24 2006-12-07 Fujifilm Holdings Corp Active energy curing type ink cartridge and inkjet recorder
KR101266130B1 (en) * 2005-06-23 2013-05-27 렌슬러 폴리테크닉 인스티튜트 Package design for producing white light with short-wavelength leds and down-conversion materials
CN101865375B (en) 2005-06-28 2013-03-13 首尔Opto仪器股份有限公司 Light-emitting device
US8896216B2 (en) 2005-06-28 2014-11-25 Seoul Viosys Co., Ltd. Illumination system
JP2007007949A (en) 2005-06-29 2007-01-18 Fujifilm Holdings Corp Active energy curing ink jet recorder and its recording method
KR100616812B1 (en) 2005-07-26 2006-08-30 삼성전기주식회사 White light emitting device
US20070023762A1 (en) * 2005-07-29 2007-02-01 Luxo Asa And Oec Ag White light emitting LED-powered lamp
JP2007051193A (en) 2005-08-17 2007-03-01 Fujifilm Corp Ink composition, inkjet recording method, printed matter, planographic printing plate manufacturing method, and planographic printing plate
ATE410460T1 (en) 2005-08-23 2008-10-15 Fujifilm Corp CURABLE INK CONTAINING MODIFIED OXETANE
KR100691273B1 (en) 2005-08-23 2007-03-12 삼성전기주식회사 Composite phosphor powder, light emitting device and composite phosphor powder manufacturing method using same
JP4677306B2 (en) 2005-08-23 2011-04-27 富士フイルム株式会社 Active energy curable ink jet recording apparatus
JP2007062271A (en) 2005-09-01 2007-03-15 Fujifilm Corp Active energy curable ink jet device
KR100684044B1 (en) 2005-09-02 2007-02-16 김진환 White light emitting diode and its manufacturing method
JP4757574B2 (en) 2005-09-07 2011-08-24 富士フイルム株式会社 Ink composition, inkjet recording method, printed matter, planographic printing plate manufacturing method, and planographic printing plate
US7936418B2 (en) * 2005-09-29 2011-05-03 Kabushiki Kaisha Toshiba White light-emitting device and manufacturing method thereof, and backlight and liquid crystal display device using the same
KR20080059418A (en) * 2005-09-30 2008-06-27 더 리전츠 오브 더 유니버시티 오브 캘리포니아 Nitride and oxynitride cerium-based fluorescent materials for solid state lighting
US20070080636A1 (en) * 2005-10-07 2007-04-12 Taiwan Oasis Technology Co., Ltd. White multi-wavelength LED & its manufacturing process
US7728050B2 (en) 2005-11-04 2010-06-01 Fujifilm Corporation Curable composition, ink composition, inkjet recording method, printed matter, method for producing planographic printing plate, planographic printing plate and oxetane compound
KR101258397B1 (en) * 2005-11-11 2013-04-30 서울반도체 주식회사 Copper-Alkaline-Earth-Silicate mixed crystal phosphors
KR101200400B1 (en) * 2005-12-01 2012-11-16 삼성전자주식회사 White light emitting diode
US20070125984A1 (en) * 2005-12-01 2007-06-07 Sarnoff Corporation Phosphors protected against moisture and LED lighting devices
US8906262B2 (en) * 2005-12-02 2014-12-09 Lightscape Materials, Inc. Metal silicate halide phosphors and LED lighting devices using the same
KR101055772B1 (en) 2005-12-15 2011-08-11 서울반도체 주식회사 Light emitting device
JP4932248B2 (en) 2005-12-21 2012-05-16 Ｎｅｃライティング株式会社 Yellow light emitting phosphor, white light emitting element using the same, and illumination device using the same
KR101332139B1 (en) * 2005-12-21 2013-11-21 크리, 인코포레이티드 Lighting device and lighting method
CN103925521A (en) 2005-12-21 2014-07-16 科锐公司 Lighting device
JP2009527071A (en) 2005-12-22 2009-07-23 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド Lighting device
US7794918B2 (en) 2005-12-28 2010-09-14 Fujifilm Corporation Ink composition, inkjet recording method, printed material, method for producing planographic printing plate, and planographic printing plate
JP4719606B2 (en) 2006-03-30 2011-07-06 富士フイルム株式会社 Inkjet head recording device
KR100875443B1 (en) 2006-03-31 2008-12-23 서울반도체 주식회사 Light emitting device
US8513875B2 (en) 2006-04-18 2013-08-20 Cree, Inc. Lighting device and lighting method
US9084328B2 (en) 2006-12-01 2015-07-14 Cree, Inc. Lighting device and lighting method
WO2007123938A2 (en) * 2006-04-18 2007-11-01 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
US7821194B2 (en) * 2006-04-18 2010-10-26 Cree, Inc. Solid state lighting devices including light mixtures
US7997745B2 (en) 2006-04-20 2011-08-16 Cree, Inc. Lighting device and lighting method
JP4944948B2 (en) 2006-05-05 2012-06-06 クリー インコーポレイテッド Lighting device
WO2007142946A2 (en) 2006-05-31 2007-12-13 Cree Led Lighting Solutions, Inc. Lighting device and method of lighting
JP5276264B2 (en) 2006-07-03 2013-08-28 富士フイルム株式会社 INK COMPOSITION, INKJET RECORDING METHOD, PRINTED MATERIAL, AND METHOD FOR PRODUCING A lithographic printing plate
JP2008041739A (en) * 2006-08-02 2008-02-21 Tokai Kogaku Kk Fluorescent light emitting device
CN101501874B (en) 2006-08-14 2012-04-04 株式会社藤仓 Light emitting device and lighting device
KR101258227B1 (en) 2006-08-29 2013-04-25 서울반도체 주식회사 Light emitting device
US7703942B2 (en) * 2006-08-31 2010-04-27 Rensselaer Polytechnic Institute High-efficient light engines using light emitting diodes
US20080064131A1 (en) * 2006-09-12 2008-03-13 Mutual-Tek Industries Co., Ltd. Light emitting apparatus and method for the same
JP4928892B2 (en) 2006-09-29 2012-05-09 富士フイルム株式会社 Inkjet recording device
TW200833814A (en) * 2006-10-03 2008-08-16 Sarnoff Corp Metal silicate halide phosphors and LED lighting devices using the same
US8029155B2 (en) 2006-11-07 2011-10-04 Cree, Inc. Lighting device and lighting method
US7889421B2 (en) 2006-11-17 2011-02-15 Rensselaer Polytechnic Institute High-power white LEDs and manufacturing method thereof
DE602007000721D1 (en) 2006-11-30 2009-04-30 Fujifilm Corp Ink jet recording ink composition and ink jet recording method
US9441793B2 (en) 2006-12-01 2016-09-13 Cree, Inc. High efficiency lighting device including one or more solid state light emitters, and method of lighting
CN101611259B (en) 2006-12-07 2012-06-27 科锐公司 Lighting device and lighting method
JP4228012B2 (en) 2006-12-20 2009-02-25 Ｎｅｃライティング株式会社 Red light emitting nitride phosphor and white light emitting device using the same
EP1944173B1 (en) 2007-01-15 2010-04-21 FUJIFILM Corporation Ink composition and inkjet recording method using the same
JP5224694B2 (en) 2007-02-06 2013-07-03 富士フイルム株式会社 Ink composition for ink jet recording and ink jet recording method
US7806508B2 (en) 2007-02-06 2010-10-05 Fujifilm Corporation Ink-jet recording method and ink-jet recording apparatus
CN101657671B (en) * 2007-02-22 2012-07-11 科锐公司 Lighting device, lighting method, filter and filtering method
JP5227521B2 (en) 2007-02-26 2013-07-03 富士フイルム株式会社 Ink composition, ink jet recording method, printed matter, and ink set
JP2008208266A (en) 2007-02-27 2008-09-11 Fujifilm Corp Ink composition, inkjet recording method, printed material, method for producing lithographic printing plate, and lithographic printing plate
JP5224699B2 (en) 2007-03-01 2013-07-03 富士フイルム株式会社 Ink composition, inkjet recording method, printed material, method for producing lithographic printing plate, and lithographic printing plate
JP2008246793A (en) 2007-03-29 2008-10-16 Fujifilm Corp Active energy ray curable ink jet recording apparatus
US20080237500A1 (en) * 2007-03-30 2008-10-02 General Electric Company Thermo-optically functional compositions, systems and methods of making
US20080237541A1 (en) * 2007-03-30 2008-10-02 General Electric Company Thermo-optically functional compositions, systems and methods of making
US8278823B2 (en) * 2007-03-30 2012-10-02 General Electric Company Thermo-optically functional compositions, systems and methods of making
CN101688644B (en) 2007-05-08 2011-06-15 科锐Led照明科技公司 Lighting device and lighting method
JP2010527156A (en) 2007-05-08 2010-08-05 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド Lighting device and lighting method
BRPI0811561A2 (en) 2007-05-08 2015-06-16 Cree Led Lighting Solutions Lighting device and lighting method
CN101711325B (en) 2007-05-08 2013-07-10 科锐公司 Lighting device and lighting method
TWI422785B (en) 2007-05-08 2014-01-11 克里公司 Lighting device and lighting method
TWI429731B (en) * 2007-07-16 2014-03-11 路明納森公司 Red-emitting fluorinated phosphor activated by tetravalent manganese ions
US7863635B2 (en) 2007-08-07 2011-01-04 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials
RU2467051C2 (en) 2007-08-22 2012-11-20 Сеул Семикондактор Ко., Лтд. Luminophores based on nonstoichiometric tetragonal silicates of copper and alkali-earth metal and method for production thereof
KR101055769B1 (en) 2007-08-28 2011-08-11 서울반도체 주식회사 Light-emitting device adopting non-stoichiometric tetra-alkaline earth silicate phosphor
DE102007040873B4 (en) * 2007-08-29 2017-07-20 Osram Gmbh Lighting device and method for adjusting a radiation characteristic of a lighting device
JP5044329B2 (en) 2007-08-31 2012-10-10 株式会社東芝 Light emitting device
DE102007053286B4 (en) * 2007-09-20 2025-03-27 Osram Oled Gmbh Method for producing an optoelectronic component
US8076393B2 (en) 2007-09-26 2011-12-13 Fujifilm Corporation Ink composition, inkjet recording method, and printed material
JP5236238B2 (en) 2007-09-28 2013-07-17 富士フイルム株式会社 White ink composition for inkjet recording
JP5227560B2 (en) 2007-09-28 2013-07-03 富士フイルム株式会社 Ink composition, inkjet recording method, printed matter, and method for producing molded printed matter
US8129447B2 (en) 2007-09-28 2012-03-06 Fujifilm Corporation Ink composition and inkjet recording method using the same
KR100891020B1 (en) * 2007-09-28 2009-03-31 한국과학기술원 Yellow luminescent Ce3 + regenerated calcium silicate yellow phosphor with new composition and method for producing same
JP2009090489A (en) 2007-10-04 2009-04-30 Fujifilm Corp Image forming method and image forming apparatus
TWI481068B (en) * 2007-10-10 2015-04-11 克里公司 Lighting device and method of manufacturing same
US7915627B2 (en) * 2007-10-17 2011-03-29 Intematix Corporation Light emitting device with phosphor wavelength conversion
US8119028B2 (en) * 2007-11-14 2012-02-21 Cree, Inc. Cerium and europium doped single crystal phosphors
DE102007056342A1 (en) * 2007-11-22 2009-05-28 Merck Patent Gmbh Surface modified phosphor particles, useful e.g. for converting blue or near UV lying emission into visible white radiation, comprise luminescent particles containing silicate compounds
JP5241211B2 (en) 2007-11-28 2013-07-17 富士フイルム株式会社 Ink composition and inkjet recording method
US8240838B2 (en) 2007-11-29 2012-08-14 Fujifilm Corporation Ink composition for inkjet recording, inkjet recording method, and printed material
JP5457636B2 (en) 2008-01-22 2014-04-02 富士フイルム株式会社 Photocurable composition, photocurable ink composition, method for producing photocured product, and inkjet recording method
JP5254632B2 (en) 2008-02-07 2013-08-07 富士フイルム株式会社 Ink composition, inkjet recording method, printed matter, and molded printed matter
US20090214797A1 (en) 2008-02-25 2009-08-27 Fujifilm Corporation Inkjet ink composition, and inkjet recording method and printed material employing same
JP2009206459A (en) * 2008-02-29 2009-09-10 Sharp Corp Color conversion member and light-emitting apparatus using the same
TWI361829B (en) * 2008-03-20 2012-04-11 Ind Tech Res Inst White light illumination device
JP4914862B2 (en) 2008-03-26 2012-04-11 富士フイルム株式会社 Inkjet recording method and inkjet recording apparatus
US8242525B2 (en) * 2008-05-20 2012-08-14 Lightscape Materials, Inc. Silicate-based phosphors and LED lighting devices using the same
US8240875B2 (en) 2008-06-25 2012-08-14 Cree, Inc. Solid state linear array modules for general illumination
JP5106285B2 (en) 2008-07-16 2012-12-26 富士フイルム株式会社 Photocurable composition, ink composition, and ink jet recording method using the ink composition
US8378002B2 (en) 2008-07-16 2013-02-19 Fujifilm Corporation Aqueous ink composition, aqueous ink composition for inkjet recording, and inkjet recording method
WO2010023840A1 (en) 2008-08-28 2010-03-04 Panasonic Corporation Semiconductor light emitting device and backlight source, backlight source system, display device, and electronic device using the same
JP2010059244A (en) 2008-09-01 2010-03-18 Fujifilm Corp Ink composition and inkjet recording method
JP2010077228A (en) 2008-09-25 2010-04-08 Fujifilm Corp Ink composition, inkjet recording method and printed material
ATE541905T1 (en) 2008-09-26 2012-02-15 Fujifilm Corp INK COMPOSITION AND INK RECORDING METHOD
JP5461809B2 (en) 2008-09-29 2014-04-02 富士フイルム株式会社 Ink composition and inkjet recording method
JP5344892B2 (en) 2008-11-27 2013-11-20 富士フイルム株式会社 Ink jet ink composition and ink jet recording method
JP2010180330A (en) 2009-02-05 2010-08-19 Fujifilm Corp Non-aqueous ink, ink set, method for recording image, device for recording image, and recorded matter
JP5350827B2 (en) 2009-02-09 2013-11-27 富士フイルム株式会社 Ink composition and inkjet recording method
JP5241564B2 (en) 2009-02-27 2013-07-17 富士フイルム株式会社 Actinic radiation curable ink composition for ink jet recording, ink jet recording method, and printed matter
JP5225156B2 (en) 2009-02-27 2013-07-03 富士フイルム株式会社 Actinic radiation curable ink composition for ink jet recording, ink jet recording method and printed matter
JP5349095B2 (en) 2009-03-17 2013-11-20 富士フイルム株式会社 Ink composition and inkjet recording method
JP5349097B2 (en) 2009-03-19 2013-11-20 富士フイルム株式会社 Ink composition, inkjet recording method, printed matter, and method for producing molded printed matter
JP2010229284A (en) 2009-03-27 2010-10-14 Fujifilm Corp Photocurable composition
JP2010235897A (en) 2009-03-31 2010-10-21 Fujifilm Corp Non-aqueous ink, ink set, image recording method, image recording apparatus, and recorded matter
JP5554106B2 (en) 2009-03-31 2014-07-23 富士フイルム株式会社 Colored curable composition, method for producing color filter, color filter, solid-state imaging device, and liquid crystal display device
CN102656233B (en) 2009-05-01 2015-04-29 纳米系统公司 Functionalized Matrix for Nanostructure Dispersion
US8434883B2 (en) * 2009-05-11 2013-05-07 SemiOptoelectronics Co., Ltd. LLB bulb having light extracting rough surface pattern (LERSP) and method of fabrication
US8921876B2 (en) 2009-06-02 2014-12-30 Cree, Inc. Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements
US8651692B2 (en) * 2009-06-18 2014-02-18 Intematix Corporation LED based lamp and light emitting signage
DE102009030205A1 (en) * 2009-06-24 2010-12-30 Litec-Lp Gmbh Phosphors with Eu (II) -doped silicate luminophores
JP5424764B2 (en) 2009-07-28 2014-02-26 富士フイルム株式会社 Pigment dispersion, ink composition, and ink jet recording method
JP5572026B2 (en) 2009-09-18 2014-08-13 富士フイルム株式会社 Ink composition and inkjet recording method
JP2011068783A (en) 2009-09-25 2011-04-07 Fujifilm Corp Ink composition and inkjet recording method
EP2480816A1 (en) 2009-09-25 2012-08-01 Cree, Inc. Lighting device with low glare and high light level uniformity
JP5530141B2 (en) 2009-09-29 2014-06-25 富士フイルム株式会社 Ink composition and inkjet recording method
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
DE102009054067A1 (en) * 2009-11-20 2011-05-26 Osram Opto Semiconductors Gmbh Light emitting device
US20110164430A1 (en) * 2010-01-07 2011-07-07 Kenneth Li Illuminator using light emitting diode light recycling with collimation
JP5437824B2 (en) 2010-01-14 2014-03-12 富士フイルム株式会社 Inkjet ink composition and inkjet recording method
JP6085477B2 (en) 2010-01-19 2017-02-22 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． Detection apparatus and detection method
KR20110098638A (en) 2010-02-26 2011-09-01 후지필름 가부시키가이샤 Colored curable composition, color filter and manufacturing method thereof, solid-state image pickup device and liquid crystal display device
US9275979B2 (en) 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation
JP2011225824A (en) 2010-03-30 2011-11-10 Fujifilm Corp Ink composition, inkjet recording method and process for producing molded printed material
JP5791874B2 (en) 2010-03-31 2015-10-07 富士フイルム株式会社 COLORING COMPOSITION, INKJET INK, COLOR FILTER AND ITS MANUFACTURING METHOD, SOLID-STATE IMAGING DEVICE, AND DISPLAY DEVICE
TW201139532A (en) 2010-04-30 2011-11-16 Styron Europe Gmbh Improved light diffusing composition
US8684559B2 (en) 2010-06-04 2014-04-01 Cree, Inc. Solid state light source emitting warm light with high CRI
JP5563921B2 (en) 2010-07-27 2014-07-30 富士フイルム株式会社 Ink set for ink jet recording, ink jet recording method, and printed matter
JP5687964B2 (en) 2010-07-27 2015-03-25 富士フイルム株式会社 Ink jet ink composition, ink jet recording method, and printed matter
JP5616811B2 (en) 2010-07-29 2014-10-29 富士フイルム株式会社 Inkjet recording method and printed matter
JP5650049B2 (en) 2010-07-29 2015-01-07 富士フイルム株式会社 Inkjet recording method and printed matter
KR101244921B1 (en) * 2010-08-23 2013-03-18 피에스아이 주식회사 White LED device using multi-chip
EP2423277A3 (en) 2010-08-27 2012-05-09 Fujifilm Corporation Ink composition for inkjet recording, inkjet recording method and inkjet printed article
JP5240799B2 (en) 2010-11-25 2013-07-17 富士フイルム株式会社 Ink set, ink jet recording method, and ink jet recording apparatus
CN102487060A (en) * 2010-12-02 2012-06-06 鸿富锦精密工业（深圳）有限公司 Light emitting diode
US8556469B2 (en) 2010-12-06 2013-10-15 Cree, Inc. High efficiency total internal reflection optic for solid state lighting luminaires
JP5349543B2 (en) 2011-02-03 2013-11-20 富士フイルム株式会社 Ink jet ink composition, ink set, ink jet recording method, and printed matter
JP5349628B2 (en) 2011-02-08 2013-11-20 富士フイルム株式会社 Inkjet recording method and printed matter
US11251164B2 (en) 2011-02-16 2022-02-15 Creeled, Inc. Multi-layer conversion material for down conversion in solid state lighting
JP5351293B2 (en) 2011-02-16 2013-11-27 富士フイルム株式会社 Ink jet ink composition, method for producing the same, and ink jet recording method
JP5666957B2 (en) 2011-03-25 2015-02-12 富士フイルム株式会社 Ink composition
JP5419934B2 (en) 2011-07-12 2014-02-19 富士フイルム株式会社 Inkjet ink composition and inkjet recording method
JP5474882B2 (en) 2011-07-12 2014-04-16 富士フイルム株式会社 Inkjet ink composition and inkjet recording method
JP5566979B2 (en) 2011-09-22 2014-08-06 富士フイルム株式会社 Ink composition for ink jet recording, ink pack, and ink jet recording method
JP5756071B2 (en) 2011-09-29 2015-07-29 富士フイルム株式会社 Inkjet ink composition and inkjet recording method
US8878450B2 (en) 2011-11-22 2014-11-04 Micron Technology, Inc. Light emission systems having non-monochromatic emitters and associated systems and methods
JP5544382B2 (en) 2012-02-09 2014-07-09 富士フイルム株式会社 Ink composition for ink jet recording, ink jet recording method, and printed matter
EP2824149B1 (en) 2012-03-09 2016-07-06 Fujifilm Corporation Radiation-curable ink-jet ink set and ink-jet recording method
JP5958803B2 (en) 2012-03-28 2016-08-02 富士フイルム株式会社 Actinic ray curable ink jet ink composition, method for producing the same, ink jet recording method, and printed matter
EP2644664B1 (en) 2012-03-29 2015-07-29 Fujifilm Corporation Actinic radiation-curing type ink composition, inkjet recording method, decorative sheet, decorative sheet molded product, process for producing in-mold molded article, and in-mold molded article
JP5676512B2 (en) 2012-03-30 2015-02-25 富士フイルム株式会社 Ink jet ink composition, ink jet recording method, and printed matter
JP5718845B2 (en) 2012-03-30 2015-05-13 富士フイルム株式会社 Inkjet recording method and printed matter
JP5758832B2 (en) 2012-03-30 2015-08-05 富士フイルム株式会社 Actinic radiation curable inkjet ink composition, inkjet recording method, and printed matter
JP5606567B2 (en) 2012-04-19 2014-10-15 富士フイルム株式会社 Actinic ray curable ink composition, ink jet recording method, decorative sheet, decorative sheet molded product, in-mold molded product manufacturing method, and in-mold molded product
US9139770B2 (en) 2012-06-22 2015-09-22 Nanosys, Inc. Silicone ligands for stabilizing quantum dot films
TWI596188B (en) 2012-07-02 2017-08-21 奈米系統股份有限公司 High-luminous nano structure and manufacturing method thereof
JP5642125B2 (en) 2012-08-24 2014-12-17 富士フイルム株式会社 Inkjet recording method
JP5752652B2 (en) 2012-08-29 2015-07-22 富士フイルム株式会社 Ink jet ink composition and method for producing the same, ink jet recording method, and pigment dispersion and method for producing the same
JP2014047305A (en) 2012-08-31 2014-03-17 Fujifilm Corp Ink pack
WO2014051026A1 (en) 2012-09-27 2014-04-03 富士フイルム株式会社 Ink composition, ink jet recording method, printed material, bisacyl phosphine oxide compound, and monoacyl phosphine oxide compound
JP6196450B2 (en) 2013-01-29 2017-09-13 富士フイルム株式会社 Sheet for illumination, printed matter for illumination, method for producing the same, and illumination signboard
JP5788918B2 (en) 2013-02-19 2015-10-07 富士フイルム株式会社 Inkjet recording method and inkjet recording apparatus
JP6016768B2 (en) 2013-02-21 2016-10-26 富士フイルム株式会社 Ink composition, ink jet recording method, and polymer initiator
JP5752725B2 (en) 2013-02-22 2015-07-22 富士フイルム株式会社 Ink jet ink composition, ink jet recording method, and printed matter
JP5980702B2 (en) 2013-03-07 2016-08-31 富士フイルム株式会社 INKJET INK COMPOSITION, INKJET RECORDING METHOD, AND MOLDED PRINTED PRODUCTION METHOD
JP6004971B2 (en) 2013-03-12 2016-10-12 富士フイルム株式会社 Inkjet ink composition for producing decorative sheet molded product or in-mold molded product, inkjet recording method for producing decorated sheet molded product or in-mold molded product, ink set for producing decorative sheet molded product or in-mold molded product, decorative Decorative sheet for producing sheet molded product or in-mold molded product, decorated sheet molded product, and method for producing in-mold molded product
KR102203599B1 (en) 2013-03-14 2021-01-14 나노시스, 인크. Method for solventless quantum dot exchange
JP5955275B2 (en) 2013-06-12 2016-07-20 富士フイルム株式会社 Image forming method, decorative sheet manufacturing method, molding method, decorative sheet molded product manufacturing method, in-mold molded product manufacturing method
CN104241262B (en) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 Light emitting device and display device
JP5946137B2 (en) 2013-08-16 2016-07-05 富士フイルム株式会社 Inkjet recording method
JP5939644B2 (en) 2013-08-30 2016-06-22 富士フイルム株式会社 Image forming method, in-mold molded product manufacturing method, and ink set
JP6021777B2 (en) 2013-09-30 2016-11-09 富士フイルム株式会社 Molding method, method for producing in-mold molded product, and decorative sheet for forming printed product
EP3101072B1 (en) 2014-01-31 2019-08-28 FUJIFILM Corporation Inkjet ink composition for printing on building materials, inkjet ink set for printing on building materials, inkjet recording method, and decorative building materials
JP6066960B2 (en) 2014-05-30 2017-01-25 富士フイルム株式会社 Actinic ray curable ink composition for molding process, ink set, inkjet recording method, decorative sheet for molding process, decorative sheet molded product, and method for producing in-mold molded product
JP6169545B2 (en) 2014-09-09 2017-07-26 富士フイルム株式会社 Polymerizable composition, ink composition for ink jet recording, ink jet recording method, and recorded matter
JP6246686B2 (en) 2014-09-16 2017-12-13 富士フイルム株式会社 Inkjet recording method
JP6086888B2 (en) 2014-09-26 2017-03-01 富士フイルム株式会社 Ink composition for ink jet recording, ink jet recording method, and recorded matter
JP6169548B2 (en) 2014-09-26 2017-07-26 富士フイルム株式会社 Polymerizable composition, ink composition for ink jet recording, ink jet recording method, and recorded matter
US20160090504A1 (en) 2014-09-30 2016-03-31 Fujifilm Corporation Undercoat composition, composition set, inkjet recording method, and printed material
WO2016088916A1 (en) * 2014-12-04 2016-06-09 엘이디에스티 주식회사 Light-emitting diode member and module satisfying spectrum characteristics for illuminating art works
JP6563028B2 (en) 2015-11-20 2019-08-21 富士フイルム株式会社 Photopolymerization initiator and production method thereof, polymerizable composition, inkjet recording method, and acylphosphine oxide compound
JP6556258B2 (en) 2015-12-18 2019-08-07 富士フイルム株式会社 Liquid composition for inkjet printer
WO2018142820A1 (en) 2017-01-31 2018-08-09 富士フイルム株式会社 Manufacturing method of laminate printed article, and laminate printed article
WO2018142819A1 (en) 2017-01-31 2018-08-09 富士フイルム株式会社 Inkjet recording method and manufacturing method of laminate printed article
JP2018125438A (en) * 2017-02-01 2018-08-09 豊田合成株式会社 Light emitting device
CN110325601B (en) 2017-02-28 2022-03-15 富士胶片株式会社 Liquid composition for inkjet and inkjet recording method
CN111788703A (en) * 2018-02-26 2020-10-16 京瓷株式会社 Light-emitting device and lighting device
US10991855B2 (en) 2018-04-16 2021-04-27 Lextar Electronics Corporation White light emitting device
WO2020202628A1 (en) 2019-03-29 2020-10-08 富士フイルム株式会社 Photocurable ink composition and method for image recording
US11313671B2 (en) 2019-05-28 2022-04-26 Mitutoyo Corporation Chromatic confocal range sensing system with enhanced spectrum light source configuration
US11628234B2 (en) 2020-06-01 2023-04-18 Know Labs, Inc. White light LED light bulbs for ambient lighting and pathogen inactivation
JPWO2022014292A1 (en) 2020-07-15 2022-01-20
EP4212341A4 (en) 2020-09-11 2024-03-13 FUJIFILM Corporation Inkjet recording ink and inkjet recording method
JP7479495B2 (en) 2020-09-29 2024-05-08 富士フイルム株式会社 Ink and image recording method
CN116323222B (en) 2020-09-29 2025-05-02 富士胶片株式会社 Ink jet recording method
CN116209580A (en) 2020-09-29 2023-06-02 富士胶片株式会社 Inkjet ink and inkjet recording method
WO2023053925A1 (en) 2021-09-30 2023-04-06 富士フイルム株式会社 Inkjet recording ink and inkjet recording method
JP7827738B2 (en) 2021-09-30 2026-03-10 富士フイルム株式会社 Aqueous dispersion and film-forming method
WO2024048251A1 (en) 2022-08-31 2024-03-07 富士フイルム株式会社 Inkjet ink and inkjet recording method
CN120152853A (en) 2022-10-31 2025-06-13 富士胶片株式会社 Inkjet recording device and inkjet recording method

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3819974A (en) * 1973-03-12 1974-06-25 D Stevenson Gallium nitride metal-semiconductor junction light emitting diode
US5006503A (en) * 1990-03-13 1991-04-09 Eastman Kodak Company Thermally-transferable fluorescent europium complexes
JPH05152609A (en) * 1991-11-25 1993-06-18 Nichia Chem Ind Ltd Light emitting diode
JP3116727B2 (en) * 1994-06-17 2000-12-11 日亜化学工業株式会社 Planar light source
JPH11510968A (en) * 1996-06-11 1999-09-21 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ Visible light emitting display including ultraviolet light emitting diode and ultraviolet excited visible light emitting phosphor and method of manufacturing the device
WO1998039805A1 (en) * 1997-03-03 1998-09-11 Koninklijke Philips Electronics N.V. White light-emitting diode
US5813753A (en) * 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

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