JP2003133595A - Light emitting diode lamp, red phosphor used for the same and filter used for the same - Google Patents
Light emitting diode lamp, red phosphor used for the same and filter used for the sameInfo
- Publication number
- JP2003133595A JP2003133595A JP2001326907A JP2001326907A JP2003133595A JP 2003133595 A JP2003133595 A JP 2003133595A JP 2001326907 A JP2001326907 A JP 2001326907A JP 2001326907 A JP2001326907 A JP 2001326907A JP 2003133595 A JP2003133595 A JP 2003133595A
- Authority
- JP
- Japan
- Prior art keywords
- emitting diode
- light
- light emitting
- red
- phosphor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Landscapes
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、白色光を発する発
光ダイオードランプと、これに用いられる蛍光体及びフ
ィルタとに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode lamp that emits white light, and a phosphor and a filter used therein.
【０００２】[0002]
【従来の技術】従来の白色光を発する発光ダイオードラ
ンプには、ＧａＮ系の発光ダイオードチップと、この発
光ダイオードチップをモールドするモールド樹脂と、こ
のモールド樹脂に混合されたＹＡＧ：Ｃｅ系の蛍光体と
を有するものがある。2. Description of the Related Art In a conventional light-emitting diode lamp that emits white light, a GaN-based light-emitting diode chip, a molding resin for molding the light-emitting diode chip, and a YAG: Ce-based phosphor mixed with the molding resin. Some have and.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上述し
た従来の発光ダイオードランプでは、青色光と緑色光と
の２色を混合して白色光を得るものであるから、赤色系
の暖色系に優れた白色表現が実現できなかった。このた
め、この発光ダイオードランプを液晶表示パネルのバッ
クライトとして用いた場合、赤色系の表示が困難となっ
ていた。However, in the above-mentioned conventional light emitting diode lamp, since white light is obtained by mixing two colors of blue light and green light, it is excellent in red warm color system. White expression could not be realized. Therefore, when this light-emitting diode lamp is used as a backlight of a liquid crystal display panel, it is difficult to display a red color.
【０００４】本発明は上記事情に鑑みて創案されたもの
であって、暖色系に優れた白色光を発することができる
発光ダイオードランプと、これに用いられる蛍光体及び
フィルタとを提供することを目的としている。The present invention has been devised in view of the above circumstances, and provides a light emitting diode lamp capable of emitting white light excellent in warm color system, and a phosphor and a filter used therein. Has an aim.
【０００５】[0005]
【課題を解決するための手段】本発明に係る発光ダイオ
ードランプは、青色光を発する発光ダイオードチップ
と、この発光ダイオードチップをモールドするモールド
樹脂と、前記発光ダイオードチップからの青色光を受け
る部分に設けられ、前記青色光を受けると、緑色の蛍光
を発する緑色蛍光体と、前記発光ダイオードチップから
の青色光と前記緑色蛍光体からの緑色の蛍光とを受ける
位置に設けられ、前記青色光又は緑色光を受けると、赤
色の蛍光を発する赤色蛍光体とを備えており、前記赤色
蛍光体は、４５０〜４７０ｎｍの波長を含む青色光、お
よび５２０〜５５０ｎｍの波長を含む緑色光により励起
され、５９０〜６３０ｎｍの範囲で赤色光を発する
（Ｙ，Ｌａ）2 Ｏ3 ：Ｅｕで示されるものである。A light emitting diode lamp according to the present invention comprises a light emitting diode chip that emits blue light, a molding resin that molds the light emitting diode chip, and a portion that receives the blue light from the light emitting diode chip. Provided, when receiving the blue light, a green phosphor emitting green fluorescence, provided at a position for receiving the blue light from the light emitting diode chip and the green fluorescence from the green phosphor, the blue light or When receiving green light, it is provided with a red phosphor that emits red fluorescence, and the red phosphor is excited by blue light having a wavelength of 450 to 470 nm and green light having a wavelength of 520 to 550 nm, It is represented by (Y, La) 2 O 3 : Eu which emits red light in the range of 590 to 630 nm.
【０００６】また、本発明に係る赤色蛍光体は、４５０
〜４７０ｎｍの波長を含む青色光、および５２０〜５５
０ｎｍの波長を含む緑色光により励起され、５９０〜６
３０ｎｍの範囲で赤色光を発するものである。The red phosphor according to the present invention is 450
Blue light, including wavelengths of ~ 470 nm, and 520-55
Excited by green light containing a wavelength of 0 nm, 590-6
It emits red light in the range of 30 nm.
【０００７】さらに、本発明に係るフィルタは、青色光
を受けると赤色の蛍光を発する赤色蛍光体を含むフィル
タであって、前記赤色蛍光体は、化学式がＹ2 Ｏ3 ：Ｅ
ｕ、Ｙ2 Ｏ2 Ｓ：Ｅｕ、ＹＡｌＯ3 ：Ｅｕ、Ｙ（Ａｌ，
Ｇａ）Ｏ3 ：Ｅｕ又は（Ｙ，Ｌａ）2 Ｏ3 ：Ｅｕの少な
くとも１種類以上である。Further, the filter according to the present invention is a filter including a red phosphor that emits red fluorescence when receiving blue light, and the red phosphor has a chemical formula of Y 2 O 3 : E.
u, Y 2 O 2 S: Eu, YAlO 3 : Eu, Y (Al,
It is at least one kind of Ga) O 3 : Eu or (Y, La) 2 O 3 : Eu.
【０００８】[0008]
【発明の実施の形態】図１は本発明の実施の形態に係る
発光ダイオードランプの構成を示す概略的断面図、図２
は本発明の他の実施の形態に係る発光ダイオードランプ
の概略的断面図、図３は本発明のさらに他の実施の形態
に係る発光ダイオードランプの概略的断面図、図４はこ
の発光ダイオードランプに用いられる赤色蛍光体である
（Ｙ，Ｌａ）2 Ｏ3 ：Ｅｕの励起スペクトル図、図５は
この発光ダイオードランプに用いられる赤色蛍光体であ
る（Ｙ，Ｌａ）2 Ｏ3 ：Ｅｕの発光スペクトル図、図６
は本発明の実施の形態に係る発光ダイオードランプの色
再現範囲を示すＣＩＥ色度座標である。1 is a schematic sectional view showing a structure of a light emitting diode lamp according to an embodiment of the present invention, FIG.
Is a schematic sectional view of a light emitting diode lamp according to another embodiment of the present invention, FIG. 3 is a schematic sectional view of a light emitting diode lamp according to yet another embodiment of the present invention, and FIG. 4 is this light emitting diode lamp. is a red phosphor used in (Y, La) 2 O 3 : excitation spectrum of Eu, FIG. 5 is a red phosphor used in the light-emitting diode lamp (Y, La) 2 O 3 : Eu emission Spectrum diagram, Figure 6
Is a CIE chromaticity coordinate indicating a color reproduction range of the light emitting diode lamp according to the embodiment of the present invention.
【０００９】本発明の実施の形態に係る発光ダイオード
ランプＡは、青色光Ｌ１を発する発光ダイオードチップ
１００Ａと、この発光ダイオードチップ１００Ａをモー
ルドするモールド樹脂と、前記発光ダイオードチップ１
００Ａからの青色光Ｌ１を受ける部分に設けられ、前記
青色光Ｌ１を受けると、緑色の蛍光Ｌ２を発する緑色蛍
光体２１０Ａと、前記発光ダイオードチップ１００Ａか
らの青色光Ｌ１と前記緑色蛍光体２１０Ａからの緑色の
蛍光Ｌ２とを受ける位置に設けられ、前記青色光Ｌ１又
は緑色の蛍光Ｌ２を受けると、赤色の蛍光Ｌ３を発する
赤色蛍光体２２０Ａとを備えており、前記赤色蛍光体２
２０Ａは、４５０〜４７０ｎｍの波長を含む青色光Ｌ
１、および５２０〜５５０ｎｍの波長を含む緑色の蛍光
Ｌ２により励起され、５９０〜６３０ｎｍの範囲で赤色
の蛍光Ｌ３を発する（Ｙ，Ｌａ）2Ｏ3 ：Ｅｕで示され
るものである。A light emitting diode lamp A according to an embodiment of the present invention includes a light emitting diode chip 100A that emits blue light L1, a molding resin that molds the light emitting diode chip 100A, and the light emitting diode chip 1 described above.
00A is provided in a portion that receives the blue light L1, and when the blue light L1 is received, the green phosphor 210A that emits green fluorescence L2, the blue light L1 from the light emitting diode chip 100A, and the green phosphor 210A are received. And a red phosphor 220A that emits red fluorescence L3 when the blue light L1 or the green fluorescence L2 is received.
20A is a blue light L including a wavelength of 450 to 470 nm.
It is represented by (Y, La) 2 O 3 : Eu which is excited by green fluorescence L2 containing wavelengths of 1 and 520 to 550 nm and emits red fluorescence L3 in the range of 590 to 630 nm.
【００１０】前記緑色蛍光体２１０Ａは、Ｙ2 Ｏ3 とＡ
ｌ2 Ｏ3 とＣｅ2 Ｏ3 とＴｂ2 Ｏ3とＧａ2 Ｏ3 とを
（Ｙ＋Ｃｅ＋Ｔｂ）：（Ａｌ＋Ｇａ）＝３：５、ただし
Ｙ：Ｃｅ：Ｔｂ＝０．７９８：０．０２：０．２、Ａ
ｌ：Ｇａ＝０．４：０．６となるように混合し、１６０
０℃で３時間かけて焼成した後、ふるいを用いて分級す
ることで得られた（Ｙ，Ｃｅ）3 （Ａｌ，Ｇａ）
5 Ｏ12：Ｔｂを用いる。The green phosphor 210A is composed of Y 2 O 3 and A
l 2 O 3 , Ce 2 O 3 , Tb 2 O 3 and Ga 2 O 3 were (Y + Ce + Tb) :( Al + Ga) = 3: 5, where Y: Ce: Tb = 0.798: 0.02: 0. 2, A
l: Ga = 0.4: 0.6 and mixed to obtain 160
Obtained by firing at 0 ° C. for 3 hours and then classifying with a sieve (Y, Ce) 3 (Al, Ga)
5 O 12 : Tb is used.
【００１１】また、前記赤色蛍光体２２０Ａである
（Ｙ，Ｌａ）2 Ｏ3 ：Ｅｕは、Ｙ2 Ｏ3とＬａ2 Ｏ3 と
Ｅｕ2 Ｏ3 とをＹ：Ｌａ：Ｅｕ＝０．５：０．４：０．
１となるように混合し、１６００℃で３時間焼成した
後、ふるいを用いて分級することによって得られた。The (Y, La) 2 O 3 : Eu, which is the red phosphor 220A, contains Y 2 O 3 , La 2 O 3 and Eu 2 O 3 in a Y: La: Eu = 0.5: 0.4: 0.
It was obtained by mixing so as to be 1, baking at 1600 ° C. for 3 hours, and then classifying using a sieve.
【００１２】この赤色蛍光体２２０Ａである（Ｙ，Ｌ
ａ）2 Ｏ3 ：Ｅｕの励起スペクトルは図４、発光スペク
トルは図５に示すようになる。この赤色蛍光体２２０Ａ
である（Ｙ，Ｌａ）2 Ｏ3 ：Ｅｕの発光面積は、Ｙ2 Ｏ
3 ：Ｅｕと比較して約３倍となり、大幅に明るさを増強
することができた。この赤色蛍光体２２０Ａと、緑色蛍
光体２１０Ａである（Ｙ，Ｃｅ）3 （Ａｌ，Ｇａ）5 Ｏ
12：Ｔｂとを用いた発光ダイオードランプＡは、表１に
示すような結果を得ることができた。また、この発光ダ
イオードランプＡの輝度は、赤色蛍光体としてＹ
2 Ｏ3 ：Ｅｕを用いた場合と比較して約１．５倍となっ
た。This red phosphor 220A (Y, L
a) The excitation spectrum and emission spectrum of 2 O 3 : Eu are as shown in FIG. 4 and FIG. 5, respectively. This red phosphor 220A
In a (Y, La) 2 O 3 : light-emitting area of Eu is, Y 2 O
3 : About 3 times that of Eu, and the brightness could be greatly enhanced. The red phosphor 220A and the green phosphor 210A are (Y, Ce) 3 (Al, Ga) 5 O.
The light emitting diode lamp A using 12 : Tb could obtain the results shown in Table 1. The brightness of the light emitting diode lamp A is Y as a red phosphor.
It was about 1.5 times as compared with the case of using 2 O 3 : Eu.
【００１３】表１ ｘ ｙ ０．２０ ０．１４ ０．２９ ０．３０ ０．３２ ０．３３ ０．３８ ０．４０Table 1 xy 0.20 0.14 0.29 0.30 0.32 0.33 0.38 0.40
【００１４】このため、この赤色蛍光体２２０Ａは、発
光ダイオードチップ１００Ａとしては４６８ｎｍに主ピ
ークを有するＩｎＧａＮ半導体発光素子である青色光Ｌ
１を発する発光ダイオードチップ１００Ａと組み合わせ
ることが望ましい。この発光ダイオードチップ１００Ａ
からの青色光Ｌ１を受けた赤色蛍光体２２０Ａは、波長
が６００〜６１０ｎｍ程度の赤色光、すなわち赤色の蛍
光Ｌ３を発する。また、この赤色蛍光体２２０Ａは、波
長が５２０〜５５０ｎｍ程度の緑色光、すなわち緑色の
蛍光Ｌ２を受けることで、波長が６００〜６１０ｎｍ程
度の光、すなわち赤色の蛍光Ｌ３を発する。さらに、緑
色蛍光体２１０Ａは、青色光Ｌ１を受けると、５３０〜
５５０ｎｍ程度、すなわち緑色の蛍光Ｌ２を発する。Therefore, the red phosphor 220A is a blue light L which is an InGaN semiconductor light emitting element having a main peak at 468 nm as the light emitting diode chip 100A.
It is desirable to combine with the light emitting diode chip 100A which emits 1. This light emitting diode chip 100A
The red phosphor 220A that has received the blue light L1 from the above emits red light having a wavelength of about 600 to 610 nm, that is, red fluorescence L3. Further, the red phosphor 220A emits light having a wavelength of about 600 to 610 nm, that is, red fluorescence L3 by receiving green light having a wavelength of about 520 to 550 nm, that is, green fluorescence L2. Further, when the green phosphor 210A receives the blue light L1, it receives 530 to 530.
It emits green fluorescence L2 of about 550 nm.
【００１５】なお、前記発光ダイオードチップ１００Ａ
は、青色光Ｌ１を発するものであればよいので上記のも
のに限定されるものではなく、波長が４５０〜４７０ｎ
ｍの光を発するものであればよい。The light emitting diode chip 100A
Is not limited to the above, as long as it emits blue light L1, and the wavelength is 450 to 470n.
Any light source that emits m light may be used.
【００１６】発光ダイオードチップ１００Ａからの青色
光Ｌ１と、緑色蛍光体２１０Ａからの緑色の蛍光Ｌ２
と、赤色蛍光体２２０Ａからの赤色の蛍光Ｌ３とが混合
されることにより、暖色系を含んだ白色光を得ることが
できるのである。Blue light L1 from the light emitting diode chip 100A and green fluorescence L2 from the green phosphor 210A.
And the red fluorescence L3 from the red phosphor 220A are mixed, white light including a warm color system can be obtained.
【００１７】リードフレーム４００Ａのダイボンディン
グリード４１０Ａの先端のカップ部４１１Ａに青色光Ｌ
１を発するＩｎＧａＮ半導体発光素子である発光ダイオ
ードチップ１００Ａをダイボンディングし、さらに発光
ダイオードチップ１００Ａとリードフレーム４００のワ
イヤボンディングリード４２０Ａに金線等の細線４３０
Ａでワイヤボンディングしたものに対して、前記赤色蛍
光体２２０Ａである（Ｙ，Ｌａ）2 Ｏ3 ：Ｅｕと、緑色
蛍光体２１０Ａとをエポキシ樹脂中に混合した第１のモ
ールド樹脂３１０Ａでモールドした。この第１のモール
ド樹脂３１０Ａは、カップ部４１１Ａに充填することで
行われる。そして、この第１のモールド樹脂３１０Ａを
１５０℃で１時間加熱し硬化させた。さらに、透明なエ
ポキシ樹脂からなる第２のモールド樹脂３２０Ａで周囲
をモールドした。Blue light L is applied to the cup portion 411A at the tip of the die bonding lead 410A of the lead frame 400A.
The light emitting diode chip 100A which is an InGaN semiconductor light emitting element emitting 1 is die-bonded, and the wire bonding lead 420A of the light emitting diode chip 100A and the lead frame 400 is further connected to a thin wire 430 such as a gold wire.
The red phosphor 220A (Y, La) 2 O 3 : Eu and the green phosphor 210A were wire-bonded with A and molded with a first molding resin 310A in which an epoxy resin was mixed. . The first mold resin 310A is filled in the cup portion 411A. Then, the first mold resin 310A was heated and cured at 150 ° C. for 1 hour. Further, the periphery was molded with a second mold resin 320A made of a transparent epoxy resin.
【００１８】このように構成された発光ダイオードラン
プＡから発せられる光のＣＩＥ色度座標は、赤色蛍光体
２２０Ａと緑色蛍光体２１０Ａとの添加量によって変化
した。The CIE chromaticity coordinates of the light emitted from the light emitting diode lamp A having the above-mentioned structure changed depending on the amounts of the red phosphor 220A and the green phosphor 210A added.
【００１９】なお、上述した実施の形態では、モールド
樹脂３００Ａを緑色蛍光体２１０Ａ及び赤色蛍光体２２
０Ａを混合した第１のモールド樹脂３１０Ａと、その周
囲を覆う第２のモールド樹脂３２０Ａとの２段階にわけ
たが、図２に示すように、全体を緑色蛍光体２１０Ａ及
び赤色蛍光体２２０Ａを混合した１つのモールド樹脂３
００Ａとすることも可能である。この場合には、モール
ド工程が１段階で済むという効果がある。In the above-described embodiment, the molding resin 300A is replaced with the green phosphor 210A and the red phosphor 22.
Although the first mold resin 310A mixed with 0A and the second mold resin 320A that covers the periphery thereof are divided into two stages, as shown in FIG. 2, the green phosphor 210A and the red phosphor 220A are entirely formed. One mixed molding resin 3
It may be 00A. In this case, there is an effect that the molding process is completed in one step.
【００２０】また、前記赤色蛍光体２２０Ａである
（Ｙ，Ｌａ）2 Ｏ3 ：Ｅｕと、緑色蛍光体２１０Ａの１
つである（Ｙ，Ｃｅ）3 （Ａｌ，Ｇａ）5 Ｏ12：Ｔｂと
をエポキシ樹脂中に混合したものをモールド樹脂３００
Ａとして、ＩｎＧａＮ半導体発光素子である発光ダイオ
ードチップ１００Ａをモールドした。このように構成さ
れた発光ダイオードランプＡの発光ピーク波長は４５０
ｎｍであった。The red phosphor 220A is (Y, La) 2 O 3 : Eu and the green phosphor 210A is 1%.
(Y, Ce) 3 (Al, Ga) 5 O 12 : Tb, which is a mixture of epoxy resin and mold resin 300.
As A, a light emitting diode chip 100A which is an InGaN semiconductor light emitting element was molded. The emission peak wavelength of the light emitting diode lamp A thus constructed is 450
was nm.
【００２１】緑色蛍光体２１０Ａとして（Ｙ，Ｃｅ）3
（Ａｌ，Ｇａ）5 Ｏ12：Ｔｂを用い、赤色蛍光体２２０
Ａとして（Ｙ，Ｌａ）2 Ｏ3 ：Ｅｕを用いた発光ダイオ
ードランプＡは、発せられる光のＣＩＥ色度座標が、赤
色蛍光体２２０Ａと緑色蛍光体２１０Ａとの添加量によ
って以下の表２のようになった。(Y, Ce) 3 as green phosphor 210A
(Al, Ga) 5 O 12 : Tb is used, and the red phosphor 220 is used.
In the light emitting diode lamp A using (Y, La) 2 O 3 : Eu as A, the CIE chromaticity coordinates of the emitted light are shown in Table 2 below depending on the addition amounts of the red phosphor 220A and the green phosphor 210A. It became so.
【００２２】表２ ｘ ｙ ０．３８ ０．５４ ０．４４ ０．５０ ０．５０ ０．４５ ０．５３ ０．４３ ０．５９ ０．３９Table 2 xy 0.38 0.54 0.44 0.50 0.50 0.45 0.53 0.43 0.59 0.39
【００２３】赤色蛍光体２２０Ａと、緑色蛍光体２１０
Ａとを混合したものを前記発光ダイオードチップ１００
Ａと組み合わせた発光ダイオードランプＡのＣＩＥ色度
座標は以下の表３に示すようになった。Red phosphor 220A and green phosphor 210
The light emitting diode chip 100 is a mixture of A and A.
The CIE chromaticity coordinates of Light Emitting Diode Lamp A in combination with A are as shown in Table 3 below.
【００２４】表３ ｘ ｙ ０．１６ ０．１０ ０．１９ ０．１５ ０．２６ ０．３０ ０．３０ ０．３９ ０．３６ ０．４９Table 3 xy 0.16 0.10 0.19 0.15 0.26 0.30 0.30 0.39 0.36 0.49
【００２５】また、赤色蛍光体２２０Ａと、緑色蛍光体
２１０Ａとを混合したものを前記発光ダイオードチップ
１００Ａと組み合わせた発光ダイオードランプＡのＣＩ
Ｅ色度座標は以下の表４に示すようになった。Also, the CI of the light emitting diode lamp A in which a mixture of the red phosphor 220A and the green phosphor 210A is combined with the light emitting diode chip 100A.
The E chromaticity coordinates are shown in Table 4 below.
【００２６】表４ ｘ ｙ ０．２０ ０．１４ ０．２９ ０．２８ ０．３２ ０．３２ ０．３５ ０．３７ ０．３８ ０．４１Table 4 xy 0.20 0.14 0.29 0.28 0.32 0.32 0.35 0.37 0.38 0.41
【００２７】さらに、赤色蛍光体２２０Ａと、緑色蛍光
体２１０Ａとを混合したものを前記発光ダイオードチッ
プ１００Ａと組み合わせた発光ダイオードランプＡのＣ
ＩＥ色度座標は以下の表５に示すようになった。Further, C of the light emitting diode lamp A in which a mixture of the red phosphor 220A and the green phosphor 210A is combined with the light emitting diode chip 100A.
The IE chromaticity coordinates are shown in Table 5 below.
【００２８】表５ ｘ ｙ ０．２２ ０．１３ ０．２９ ０．２４ ０．３３ ０．２４ ０．３４ ０．２４ ０．４１ ０．３２Table 5 xy 0.22 0.13 0.29 0.24 0.33 0.24 0.34 0.24 0.41 0.32
【００２９】なお、緑色蛍光体２１０Ａとしては、他に
Ｙ3 Ａｌ5 Ｏ12：Ｃｅも有効である。Incidentally, Y 3 Al 5 O 12 : Ce is also effective as the green phosphor 210A.
【００３０】また、上述した実施の形態では、モールド
樹脂３００Ａ（第１のモールド樹脂３１０Ａ）に、赤色
蛍光体２２０Ａと緑色蛍光体２１０Ａとを混合したが、
赤色蛍光体２２０Ａと緑色蛍光体２０１Ａとを含有させ
た透明なフィルタ５００Ａを、青色光Ｌ１を発する発光
ダイオードチップ１００Ａからの光を受ける位置、例え
ば図３に示すように、発光ダイオードチップ１００Ａの
前方にセットすることも可能である。In the above-described embodiment, the mold resin 300A (first mold resin 310A) is mixed with the red phosphor 220A and the green phosphor 210A.
The transparent filter 500A containing the red phosphor 220A and the green phosphor 201A is placed at a position where the light from the light emitting diode chip 100A emitting the blue light L1 is received, for example, in front of the light emitting diode chip 100A as shown in FIG. It is also possible to set to.
【００３１】[0031]
【発明の効果】本発明に係る発光ダイオードランプは、
青色光を発する発光ダイオードチップと、この発光ダイ
オードチップをモールドするモールド樹脂と、前記発光
ダイオードチップからの青色光を受ける部分に設けら
れ、前記青色光を受けると、緑色の蛍光を発する緑色蛍
光体と、前記発光ダイオードチップからの青色光と前記
緑色蛍光体からの緑色の蛍光とを受ける位置に設けら
れ、前記青色光又は緑色の蛍光を受けると、赤色の蛍光
を発する赤色蛍光体とを備えており、前記赤色蛍光体
は、４５０〜４７０ｎｍの波長を含む青色光、および５
２０〜５５０ｎｍの波長を含む緑色の蛍光により励起さ
れ、５９０〜６３０ｎｍの範囲で赤色の蛍光を発する
（Ｙ，Ｌａ）2 Ｏ3 ：Ｅｕで示されるものである。The light emitting diode lamp according to the present invention comprises:
A light emitting diode chip that emits blue light, a molding resin that molds this light emitting diode chip, and a green phosphor that is provided in a portion that receives blue light from the light emitting diode chip and that emits green fluorescence when receiving the blue light. And a red phosphor that is provided at a position to receive blue light from the light emitting diode chip and green fluorescence from the green phosphor, and that receives the blue light or green fluorescence, emits red fluorescence. And the red phosphor is blue light having a wavelength of 450 to 470 nm, and 5
It is represented by (Y, La) 2 O 3 : Eu which is excited by green fluorescence including a wavelength of 20 to 550 nm and emits red fluorescence in the range of 590 to 630 nm.
【００３２】従って、この発光ダイオードランプである
と、発せられる白色光には赤色の蛍光も含まれるため、
従来のものより暖色系の光を含んだものとなる。このた
め、赤色系の暖色系の白色表現が実現できる。また、こ
の発光ダイオードランプを液晶表示パネルのバックライ
トとして用いると、赤色系の表示の困難さが解消される
という効果がある。Therefore, with this light-emitting diode lamp, the white light emitted also contains red fluorescence.
It contains warmer colors of light than conventional ones. Therefore, it is possible to realize warm red-based white expression. In addition, when this light emitting diode lamp is used as a backlight of a liquid crystal display panel, there is an effect that the difficulty of displaying reddish color is eliminated.
【００３３】前記緑色蛍光体及び赤色蛍光体は、前記モ
ールド樹脂に混合されていると、両蛍光体はモールド樹
脂に均一に混合されているので、白色光を効率よく得る
ことができる。When the green phosphor and the red phosphor are mixed in the mold resin, both phosphors are uniformly mixed in the mold resin, so that white light can be efficiently obtained.
【００３４】また、透明なフィルタに緑色蛍光体及び赤
色蛍光体を含有させ、このフィルタが前記モールド樹脂
に埋設するようにしてもよい。この場合であると、従来
の発光ダイオードランプに用いているモールド樹脂を変
更することなしに、フィルタを埋設するだけで暖色系に
優れた特性を有する白色光を発する発光ダイオードラン
プとすることができる。The transparent filter may contain a green phosphor and a red phosphor, and the filter may be embedded in the molding resin. In this case, it is possible to obtain a light emitting diode lamp that emits white light having excellent characteristics in a warm color system simply by embedding a filter without changing the molding resin used in the conventional light emitting diode lamp. .
【００３５】また、本発明に係る赤色蛍光体は、４５０
〜４７０ｎｍの波長を含む青色光又は５２０〜５５０ｎ
ｍの波長を含む緑色光により励起され、５９０〜６３０
ｎｍの範囲で赤色光を発する（Ｙ，Ｌａ）2 Ｏ3 ：Ｅｕ
で示されるものである。かかる赤色蛍光体は、青色光を
発する発光ダイオードチップ及び前記青色光を受けると
緑色の蛍光を発する緑色蛍光体と組み合わせることによ
って、暖色系に優れた白色光を得ることができる。The red phosphor according to the present invention is 450
~ Blue light containing wavelengths of ~ 470 nm or 520-550n
Excited by green light containing m wavelengths, 590-630
emitting red light in the range of nm (Y, La) 2 O 3 : Eu
It is shown by. By combining the red phosphor with a light emitting diode chip that emits blue light and a green phosphor that emits green fluorescence when receiving the blue light, white light excellent in warm color can be obtained.
【００３６】また、本発明に係るフィルタは、青色光を
受けると赤色の蛍光を発する赤色蛍光体を含むフィルタ
であって、前記赤色蛍光体は、化学式がＹ2 Ｏ3 ：Ｅ
ｕ、Ｙ 2 Ｏ2 Ｓ：Ｅｕ、ＹＡｌＯ3 ：Ｅｕ、Ｙ（Ａｌ，
Ｇａ）Ｏ3 ：Ｅｕ又は（Ｙ，Ｌａ）2 Ｏ3 ：Ｅｕの少な
くとも１種類以上である。The filter according to the present invention emits blue light.
Filter containing red phosphor that emits red fluorescence when received
Wherein the red phosphor has a chemical formula of Y2O3: E
u, Y 2O2S: Eu, YAlO3: Eu, Y (Al,
Ga) O3: Eu or (Y, La)2O3: Low Eu
At least one type.
【００３７】かかるフィルタは、青色光を発する発光ダ
イオードチップと組み合わせることによって、暖色系に
優れた白色光を得ることができる。特に、このフィルタ
であると、有機ＥＬにおいて用いられる青色光を赤色光
に変換するフィルタとしても有用である。有機ＥＬで
は、有機系蛍光体が青色光を赤色光に変換する蛍光体と
して使用されているが、これの有機系蛍光体は、紫外線
や酸素による劣化が問題となっているが、このフィルタ
は耐紫外線性や耐酸素性に優れているため、有機ＥＬの
製造工程である封止工程や保管に特別な注意を必要とし
てないので、製造コストの面から優れた有機ＥＬを製造
することが可能となる。By combining such a filter with a light emitting diode chip that emits blue light, white light excellent in warm color can be obtained. In particular, this filter is also useful as a filter for converting blue light used in an organic EL into red light. In organic EL, an organic phosphor is used as a phosphor that converts blue light into red light. The organic phosphor has a problem of deterioration due to ultraviolet rays and oxygen. Since it has excellent resistance to ultraviolet rays and oxygen, it does not require special attention in the sealing process and storage, which is the manufacturing process of organic EL, and therefore it is possible to manufacture excellent organic EL from the viewpoint of manufacturing cost. Become.
【図１】本発明の実施の形態に係る発光ダイオードラン
プの構成を示す概略的断面図である。FIG. 1 is a schematic sectional view showing a structure of a light emitting diode lamp according to an embodiment of the present invention.
【図２】本発明の他の実施の形態に係る発光ダイオード
ランプの概略的断面図である。FIG. 2 is a schematic sectional view of a light emitting diode lamp according to another embodiment of the present invention.
【図３】本発明のさらに他の実施の形態に係る発光ダイ
オードランプの概略的断面図である。FIG. 3 is a schematic sectional view of a light emitting diode lamp according to another exemplary embodiment of the present invention.
【図４】この発光ダイオードランプに用いられる赤色蛍
光体である（Ｙ，Ｌａ）2 Ｏ3：Ｅｕの励起スペクトル
図である。FIG. 4 is an excitation spectrum diagram of (Y, La) 2 O 3 : Eu which is a red phosphor used in this light emitting diode lamp.
【図５】この発光ダイオードランプに用いられる赤色蛍
光体である（Ｙ，Ｌａ）2 Ｏ3：Ｅｕの発光スペクトル
図である。FIG. 5 is an emission spectrum diagram of (Y, La) 2 O 3 : Eu which is a red phosphor used in this light emitting diode lamp.
【図６】本発明の実施の形態に係る発光ダイオードラン
プの色再現範囲を示すＣＩＥ色度座標である。FIG. 6 is a CIE chromaticity coordinate showing a color reproduction range of the light emitting diode lamp according to the embodiment of the present invention.
１００Ａ 発光ダイオードチップ ２１０Ａ 緑色蛍光体 ２２０Ａ 赤色蛍光体 ３００Ａ モールド樹脂 Ｌ１ 青色光 Ｌ２ 緑色の蛍光 Ｌ３ 赤色の蛍光 100A light emitting diode chip 210A green phosphor 220A red phosphor 300A mold resin L1 blue light L2 green fluorescence L3 red fluorescence
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｃ０９Ｋ 11/78 ＣＰＣ Ｃ０９Ｋ 11/78 ＣＰＣ ＣＰＭ ＣＰＭ ＣＰＰ ＣＰＰ 11/80 11/80 11/84 11/84 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) C09K 11/78 CPC C09K 11/78 CPC CPM CPM CPP CPP 11/80 11/80 11/84 11/84
Claims (6)
と、この発光ダイオードチップをモールドするモールド
樹脂と、前記発光ダイオードチップからの青色光を受け
る部分に設けられ、前記青色光を受けると、緑色の蛍光
を発する緑色蛍光体と、前記発光ダイオードチップから
の青色光と前記緑色蛍光体からの緑色の蛍光とを受ける
位置に設けられ、前記青色光又は緑色の蛍光を受ける
と、赤色の蛍光を発する赤色蛍光体とを具備しており、
前記赤色蛍光体は、４５０〜４７０ｎｍの波長を含む青
色光、および５２０〜５５０ｎｍの波長を含む緑色の蛍
光により励起され、５９０〜６３０ｎｍの範囲で赤色の
蛍光を発する（Ｙ，Ｌａ）2Ｏ3 ：Ｅｕで示されるもの
であることを特徴とする発光ダイオードランプ。1. A light emitting diode chip that emits blue light, a molding resin that molds the light emitting diode chip, and a portion that receives the blue light from the light emitting diode chip. When the blue light is received, green fluorescent light is emitted. Is provided at a position for receiving the green light from the light emitting diode chip and the green fluorescence from the light emitting diode chip, and when receiving the blue light or the green fluorescence, the red light emitting red fluorescence. And a phosphor,
The red phosphor is excited by blue light having a wavelength of 450 to 470 nm and green fluorescence having a wavelength of 520 to 550 nm and emits red fluorescence in the range of 590 to 630 nm (Y, La) 2 O 3. : A light emitting diode lamp characterized by being represented by Eu.
と、この発光ダイオードチップをモールドするモールド
樹脂と、前記発光ダイオードチップからの青色光を受け
る位置に設けられ、前記青色光又は緑色光を受けると、
赤色の蛍光を発する赤色蛍光体とを具備しており、前記
赤色蛍光体は、Ｙ2 Ｏ3 ：Ｅｕ、Ｙ2 Ｏ 2 Ｓ：Ｅｕ、Ｙ
ＡｌＯ3 ：Ｅｕ、Ｙ（Ａｌ，Ｇａ）Ｏ3 ：Ｅｕのうち、
少なくとも１つ以上であることを特徴とする発光ダイオ
ードランプ。2. A light emitting diode chip that emits blue light.
And a mold to mold this LED chip
Receiving resin and blue light from the LED chip
Is provided at a position where the blue light or the green light is received,
And a red phosphor that emits red fluorescence.
The red phosphor is Y2O3: Eu, Y2O 2S: Eu, Y
AlO3: Eu, Y (Al, Ga) O3: Of Eu,
At least one or more light-emitting dio
Playing card.
モールド樹脂に混合されていることを特徴とする請求項
１又は２記載の発光ダイオードランプ。3. The light emitting diode lamp according to claim 1, wherein the green phosphor and the red phosphor are mixed with the mold resin.
なフィルタに含まれており、このフィルタが前記モール
ド樹脂中に埋設されていることを特徴とする請求項１又
は２記載の発光ダイオードランプ。4. The light emitting diode according to claim 1, wherein the green phosphor and the red phosphor are contained in a transparent filter, and the filter is embedded in the molding resin. lamp.
又は５２０〜５５０ｎｍの波長を含む緑色光により励起
され、５９０〜６３０ｎｍの範囲で赤色光を発する
（Ｙ，Ｌａ）2 Ｏ3 ：Ｅｕで示される赤色蛍光体。5. Exhibited by (Y, La) 2 O 3 : Eu, which is excited by blue light having a wavelength of 450 to 470 nm or green light having a wavelength of 520 to 550 nm and emits red light in the range of 590 to 630 nm. Red phosphor.
色蛍光体を含むフィルタであって、前記赤色蛍光体は、
化学式がＹ2 Ｏ3 ：Ｅｕ、Ｙ2 Ｏ2 Ｓ：Ｅｕ、ＹＡｌＯ
3 ：Ｅｕ、Ｙ（Ａｌ，Ｇａ）Ｏ3 ：Ｅｕ又は（Ｙ，Ｌ
ａ）2 Ｏ3 ：Ｅｕの少なくとも１種類以上であることを
特徴とするフィルタ。6. A filter including a red phosphor that emits red fluorescence when receiving blue light, wherein the red phosphor is
Chemical formulas are Y 2 O 3 : Eu, Y 2 O 2 S: Eu, YAlO
3 : Eu, Y (Al, Ga) O 3 : Eu or (Y, L
a) A filter comprising at least one kind of 2 O 3 : Eu.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001326907A JP2003133595A (en) | 2001-10-24 | 2001-10-24 | Light emitting diode lamp, red phosphor used for the same and filter used for the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001326907A JP2003133595A (en) | 2001-10-24 | 2001-10-24 | Light emitting diode lamp, red phosphor used for the same and filter used for the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003133595A true JP2003133595A (en) | 2003-05-09 |
Family
ID=19143212
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001326907A Pending JP2003133595A (en) | 2001-10-24 | 2001-10-24 | Light emitting diode lamp, red phosphor used for the same and filter used for the same |
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| JP (1) | JP2003133595A (en) |
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| JP2013149981A (en) * | 2013-02-08 | 2013-08-01 | Mitsubishi Chemicals Corp | Light emitting element, and illuminating device and image display device using the same |
| US8501040B2 (en) | 2007-08-22 | 2013-08-06 | Seoul Semiconductor Co., Ltd. | Non-stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same |
| US8847254B2 (en) | 2005-12-15 | 2014-09-30 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| US9209162B2 (en) | 2004-05-13 | 2015-12-08 | Seoul Semiconductor Co., Ltd. | Light emitting device including RGB light emitting diodes and phosphor |
| US9312246B2 (en) | 2006-03-31 | 2016-04-12 | Seoul Semiconductor Co., Ltd. | Light emitting device and lighting system having the same |
| JP2020535651A (en) * | 2017-09-26 | 2020-12-03 | ルミレッズ リミテッド ライアビリティ カンパニー | Luminescent device with improved warm white point |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62172085A (en) * | 1986-01-24 | 1987-07-29 | Nichia Kagaku Kogyo Kk | Rare earth metal oxide fluorescent material for fluorescent lamp |
| JPH087614A (en) * | 1994-06-17 | 1996-01-12 | Nichia Chem Ind Ltd | Sheet-like light source |
| JPH0841454A (en) * | 1994-08-02 | 1996-02-13 | Kasei Optonix Co Ltd | Luminescence composition of rare earth oxide-sulfide fluorescence body |
| WO2000033390A1 (en) * | 1998-11-30 | 2000-06-08 | General Electric Company | Light emitting device with phosphor composition |
| JP2000509912A (en) * | 1997-03-03 | 2000-08-02 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | White light emitting diode |
| JP2000236112A (en) * | 1996-09-20 | 2000-08-29 | Siemens Ag | Usage of cast molding material for wavelength conversion |
| JP2001085734A (en) * | 1999-07-12 | 2001-03-30 | Tokyo Gas Co Ltd | Device using diamond ultraviolet light-emitting element |
| JP2001144331A (en) * | 1999-09-02 | 2001-05-25 | Toyoda Gosei Co Ltd | Light-emitting device |
| JP2001177153A (en) * | 1999-12-17 | 2001-06-29 | Sharp Corp | Light emitting device |
| JP2001217466A (en) * | 2000-02-03 | 2001-08-10 | Toyoda Gosei Co Ltd | Reflection-type light-emitting device |
| JP2001226669A (en) * | 2000-02-16 | 2001-08-21 | Taiyo Ink Mfg Ltd | Paste composition of fluorescent substance |
-
2001
- 2001-10-24 JP JP2001326907A patent/JP2003133595A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62172085A (en) * | 1986-01-24 | 1987-07-29 | Nichia Kagaku Kogyo Kk | Rare earth metal oxide fluorescent material for fluorescent lamp |
| JPH087614A (en) * | 1994-06-17 | 1996-01-12 | Nichia Chem Ind Ltd | Sheet-like light source |
| JPH0841454A (en) * | 1994-08-02 | 1996-02-13 | Kasei Optonix Co Ltd | Luminescence composition of rare earth oxide-sulfide fluorescence body |
| JP2000236112A (en) * | 1996-09-20 | 2000-08-29 | Siemens Ag | Usage of cast molding material for wavelength conversion |
| JP2000509912A (en) * | 1997-03-03 | 2000-08-02 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | White light emitting diode |
| WO2000033390A1 (en) * | 1998-11-30 | 2000-06-08 | General Electric Company | Light emitting device with phosphor composition |
| JP2001085734A (en) * | 1999-07-12 | 2001-03-30 | Tokyo Gas Co Ltd | Device using diamond ultraviolet light-emitting element |
| JP2001144331A (en) * | 1999-09-02 | 2001-05-25 | Toyoda Gosei Co Ltd | Light-emitting device |
| JP2001177153A (en) * | 1999-12-17 | 2001-06-29 | Sharp Corp | Light emitting device |
| JP2001217466A (en) * | 2000-02-03 | 2001-08-10 | Toyoda Gosei Co Ltd | Reflection-type light-emitting device |
| JP2001226669A (en) * | 2000-02-16 | 2001-08-21 | Taiyo Ink Mfg Ltd | Paste composition of fluorescent substance |
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